WO2014187752A1 - Composant optoélectronique et procédé de fabrication d'un composant optoélectronique - Google Patents

Composant optoélectronique et procédé de fabrication d'un composant optoélectronique Download PDF

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Publication number
WO2014187752A1
WO2014187752A1 PCT/EP2014/060153 EP2014060153W WO2014187752A1 WO 2014187752 A1 WO2014187752 A1 WO 2014187752A1 EP 2014060153 W EP2014060153 W EP 2014060153W WO 2014187752 A1 WO2014187752 A1 WO 2014187752A1
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WIPO (PCT)
Prior art keywords
region
intermediate structure
optically active
layer
optoelectronic component
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PCT/EP2014/060153
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German (de)
English (en)
Inventor
Thomas Wehlus
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Osram Oled Gmbh
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Publication of WO2014187752A1 publication Critical patent/WO2014187752A1/fr

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0037—Arrays characterized by the distribution or form of lenses
    • G02B3/0043—Inhomogeneous or irregular arrays, e.g. varying shape, size, height
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/87—Light-trapping means
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2105/00—Planar light sources
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • F21Y2115/15—Organic light-emitting diodes [OLED]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • organic light emitting diode find increasingly widespread application in general lighting, for example, as a surface light source.
  • a conventional organic optoelectronic component for example an OLED, may comprise an anode and a cathode with an organic functional layer system
  • Layer system comprises one or more emitter layer (s) in which electromagnetic radiation is generated, one or more charge carrier pair generation layer structure (s) each of two or more
  • CGL Charge pair generation charge carrier generation layer
  • HTL hole transport layer
  • s electron transport layer
  • an OLED is formed on a trench structure.
  • trenching may result in partial de-wetting of the organic functional layer system from the support.
  • a trench structure only leads to a slight increase in the brightness in the image plane of the optoelectronic component.
  • optoelectronic component has an optically active region on a substrate, wherein the substrate has a carrier and an intermediate structure;
  • the optically active region may be for absorbing and / or for emitting a
  • the optoelectronic component can be designed as a light-emitting diode and / or a photodetector. In one embodiment, the optoelectronic component can be formed flat, for example as a
  • the intermediate structure may be transparent with respect to the electromagnetic energy
  • Waveguide be formed in terms of
  • the intermediate structure may be formed translucent with respect to the electromagnetic
  • the intermediate structure may comprise particles embedded in a matrix.
  • the particles and the matrix may have a difference in the refractive index with respect to the electromagnetic radiation that is absorbed and / or emitted in the optically active region that is greater than 0.05.
  • the particles may be formed as scattering centers with respect to the electromagnetic
  • the intermediate structure Radiation emitted and / or absorbed by the optically active region.
  • the intermediate structure Radiation emitted and / or absorbed by the optically active region.
  • the intermediate structure may be opaque and / or impervious to the electromagnetic radiation emitted and / or absorbed in the optically active region.
  • the intermediate structure may be formed as a mirror structure.
  • the intermediate structure may be formed as a heat distribution structure.
  • the intermediate structure may be formed electrically conductive.
  • the optically active region may have an organic functional layer structure between a first electrode and a second electrode, wherein the intermediate structure is formed as a first electrode.
  • Diffusion barrier be formed in terms of water and / or oxygen.
  • the intermediate structure may be formed as a UV protection, for example, comprise or be formed from a substance that absorbs UV radiation.
  • the intermediate structure may be formed as a color-changing layer, for example comprising a dye.
  • the intermediate structure may be structured such that the contact surface of the optically active region with the second region in terms of
  • the intermediate structure may be formed as a temperature measuring structure, for example a have thermoelectric structure or be formed therefrom.
  • the curvature can be formed by means of an at least partially spherical shape of the intermediate structure.
  • the intermediate structure may comprise a segment or a plurality of segments of a sphere and / or an ellipsoid.
  • the second area may be a
  • the intermediate structure may have a thickness in a range of about 0.5 ⁇ to about 2000 ⁇ .
  • the intermediate structure a
  • the lateral structuring can be designed to display information, for example in the form of a pictogram, an ideogram and / or a lettering.
  • the lateral structuring may have a first structural area and at least one second structural area
  • the first structural region and / or the second structural region can have a plurality of regions with in each case the same curvature.
  • the first structure region and the second structure region may be at least in the amount a radius of curvature and / or in the sign of a
  • the ratio of the area of the second area to the first area in the first structural area may be greater than in the second structural area.
  • the lateral structuring may be formed as an arrangement of the first structural region and / or at least one second structural region.
  • the lateral structuring may have a periodic arrangement of the first structural region and / or at least one second structural region.
  • first structural area and / or the at least one second structural area may have a different periodicity.
  • a second structural area may be formed on and / or next to the first structural area.
  • the intermediate structure may be formed such that the curvature is variable
  • the intermediate structure can be electrically insulated or be formed from an electrically insulating material.
  • the intermediate structure a
  • Refractive index which is formed between the refractive index of the carrier and the average refractive index of the optically active region.
  • a method for producing an optoelectronic component comprises: forming an intermediate structure on or over a support; Forming an optically active region on the intermediate structure; wherein the intermediate structure is formed to have a first area and a second area, wherein the first area is connected to the carrier by a positive connection and the optically active area is formed on the second area; and where the
  • Intermediate structure is formed such that the second region has at least one curvature such that the amount of the area of the second region is greater than the amount of the area of the first region.
  • the optically active region can be formed to absorb and / or emit electromagnetic radiation.
  • Optoelectronic component can be formed as a light emitting diode and / or a photodetector.
  • optoelectronic component are formed flat, for example as a surface lighting.
  • Intermediate structure are formed transparent to the electromagnetic radiation emitted and / or absorbed by the optically active region.
  • Waveguides are formed in terms of
  • the optically active region electromagnetic radiation emitted and / or absorbed by the optically active region.
  • Intermediate structure are formed translucent with respect to the electromagnetic radiation emitted and / or absorbed by the optically active region.
  • Intermediate structure can be formed such that it has particles embedded in a matrix.
  • Intermediate structure are formed opaque and / or impermeable to the electromagnetic radiation emitted and / or absorbed in the optically active region.
  • Intermediate structure can be formed as a mirror structure.
  • the optically active region can be formed such that it has an organic functional layer structure between a first and second functional layer structure
  • Intermediate structure formed as a diffusion barrier with respect to water and / or oxygen.
  • Intermediate structure are formed such that it comprises a phosphor or is formed therefrom.
  • Intermediate structure are formed as a UV protection, that is, at least partially impermeable to UV radiation are formed, for example, comprise or be formed from a substance that absorbs UV radiation.
  • Intermediate structure can be formed as a color-changing layer, for example, have a dye.
  • Intermediate structure can be formed as a temperature measuring structure, for example, be formed with a thermoelectric structure or formed therefrom.
  • the curvature can be formed by means of an at least partially spherical shape of the intermediate structure.
  • the method the
  • Intermediate structure are formed such that the second region has a wave structure.
  • Intermediate structure can be formed with a thickness i in a range of about 0, 5 ⁇ , ⁇ to about 2000 ⁇ .
  • Intermediate structure has a lateral structuring.
  • the lateral structuring can be designed to display information, for example in the form of a pictogram, an ideogram and / or a lettering.
  • the lateral structuring with a first structural area
  • Structure area have a different curvature.
  • the lateral structuring may be during or after the
  • Forming during the application of the substance or of the substance mixture of the intermediate structure can be, for example by means of a structuring method for forming the intermediate structure, for example by means of a structured stamp or a structured mask. Forming after the application of the substance or the
  • Substance mixture of the intermediate structure can, for example
  • Intermediate structure can be formed such that the first structure region and / or the second structure region has a plurality of regions with in each case the same curvature.
  • the intermediate structure may be formed such that the first structural region and the second structural region differ at least in the amount of a radius of curvature and / or in the sign of a radius of curvature.
  • Ratio of the area of the second area to the first area in the first structural area is greater than in the second
  • the lateral sidewall In one embodiment of the method, the lateral sidewall
  • Structuring be formed as an arrangement of the first structural area and / or at least a second structural area.
  • the lateral structuring may be in the form of a periodic arrangement of the first structural region and / or at least one second structural region
  • the intermediate structure can be structured laterally such that the first structural region and / or the at least one second structural region have a different periodicity.
  • Intermediate structure are structured laterally such that the at least one second structure area is formed on and / or adjacent to the first structure area.
  • Intermediate structure are formed electrically isolated or formed of an electrically insulating material.
  • Intermediate structure can be formed such that it has a refractive index which is between the refractive index of the carrier and the average refractive index of the optically active region.
  • Figure 1 is a schematic cross-sectional view of a
  • Figures 2A-D are schematic cross-sectional views
  • Figure 3 is a schematic representation of a method for producing an optoelectronic
  • optoelectronic components are described, wherein an optoelectronic Component having an optically active region.
  • the optically active region can absorb electromagnetic radiation and form a photocurrent therefrom or emit electromagnetic radiation by means of an applied voltage to the optically active region.
  • the electromagnetic radiation may have a wavelength range which comprises X-ray radiation, UV radiation (A-C), visible light and / or infrared radiation (A-C).
  • a planar optoelectronic component which has two flat, optically active sides, can be used in the
  • Connection direction of the optically active pages for example, be transparent or translucent, for example, as a transparent or translucent organic
  • a planar optoelectronic component can also be formed as a planar optoelectronic component, for example as a plane-parallel
  • the optically active region can also have a planar, optically active side and a planar, optically inactive side, for example an organic light-emitting diode which is set up as a top emitter or bottom emitter.
  • the optically inactive side can be, for example, transparent or translucent, or be provided with a mirror structure and / or an opaque substance or mixture of substances,
  • the beam path of the optoelectronic component can be directed, for example, on one side.
  • emitting electromagnetic radiation can emit
  • providing electromagnetic radiation may be understood as emitting electromagnetic radiation by means of an applied voltage to an optically active region.
  • absorbing electromagnetic radiation may include absorbing
  • picking up electromagnetic radiation may be considered as absorbing electromagnetic radiation and forming a photocurrent from the absorbed one
  • an electromagnetic radiation emitting structure may in various embodiments, an electromagnetic
  • the radiation may, for example, be light (in the visible range), UV radiation and / or infrared radiation.
  • the electromagnetic radiation may, for example, be light (in the visible range), UV radiation and / or infrared radiation.
  • the electromagnetic radiation may, for example, be light (in the visible range), UV radiation and / or infrared radiation.
  • emitting component for example, as a light-emitting diode (light emitting diode, LED) as an organic light-emitting diode (organic light emitting diode, OLED), as a light-emitting transistor or as an organic light-emitting transistor to be formed.
  • LED light emitting diode
  • OLED organic light emitting diode
  • OLED organic light emitting diode
  • electromagnetic radiation-emitting components for example housed in a common ge Ge.
  • Optoelectronic structure as an organic light emitting diode (OLED), an organic light emitting diode (OLED), an organic light emitting diode
  • Organic field effect transistor organic field effect transistor OFET
  • organic electronics may be formed.
  • the organic field effect transistor may be a The so-called “all-OFET" in which all layers are organic.
  • All-OFET An optoelectronic structure can have an organic functional layer system, which is synonymously also called organic functional layer structure
  • Layer structure may include or be formed from an organic substance or an organic substance mixture, for example, to provide a
  • electromagnetic radiation is furnished from a provided electric current.
  • a curvature in the region of the curvature have a deviation from a flat or flat surface.
  • a curvature may be, for example, a curvature, a bend, a bend or a turn, for example convex and / or concave, i. with a positive radius of curvature (convex) or with a negative radius of curvature (concave). in the
  • an area has a face
  • Kink a sharp bend in the area of the bend.
  • the kink has a negligibly small radius of curvature, for example, such that at a kink
  • Radius of curvature is not defined. In the region of a bend of the substrate of an organic light emitting diode, the
  • organic functional layer structure does not wet or dewar the substrate due to the sharp bend.
  • a substrate which has several kinks, for example in the case of a trench structure of the substrate, can therefore be of limited suitability or unsuitable for an organic optoelectronic component.
  • the averaging of the averaged refractive index can in a structure of a Mixture of substances via the refractive indices of the substances of the
  • Substance mixtures take place in this wavelength range.
  • the averaging can be formed in a structure from a substance mixture by means of forming the sum of the
  • an organic substance regardless of the respective state of aggregation, can be present in chemically uniform form
  • Carbon or simple carbon compound can be understood.
  • a mixture of substances can be understood which comprises constituents of two or more different substances whose
  • a substance class means a substance or mixture of one or more organic substances, one or more inorganic substances or one or more hybrid substances.
  • a layer for electromagnetic radiation such as light, permeable, for example, for that of the
  • Light-emitting component generated light for example, one or more wavelength ranges, for example, at least in a subregion of the wavelength range of 380 nm to 780 nm.
  • one or more wavelength ranges for example, at least in a subregion of the wavelength range of 380 nm to 780 nm.
  • Translucent layer in various embodiments to understand that essentially the whole in one
  • Quantity of light is also coupled out of the structure (for example, layer), wherein a portion of the light can be scattered in this case.
  • transparent transparent layer
  • transparent substance transparent substance
  • Embodiments are understood that a layer for electromagnetic radiation, such as light, is permeable (for example, at least in one
  • Subregion of the wavelength range from 380 nm to 780 nm), wherein a structure (for example a layer)
  • Structure for example, layer is coupled out.
  • connection of a first body with a second body may be positive, non-positive and / or cohesive.
  • the connections may be detachable, i. reversible. In different configurations can
  • Connections are not detachable, i.
  • a non-detachable connection can only be separated by destroying the connection means.
  • an irreversible, conclusive connection can be realized.
  • the first body can be connected to the second body by means of atomic and / or molecular forces.
  • Cohesive compounds can often be non-releasable compounds.
  • solder joint for example, a glass solder, or a metal solder, a welded joint be realized.
  • an adhesive may include or be formed from one of the following: a casein, a glutin, a starch, a cellulose, a resin, a tannin, a lignin, an organic matter
  • Oxygen Nitrogen, chlorine and / or sulfur; one
  • Metal oxide a silicate, a phosphate, a borate.
  • an adhesive as a hot melt adhesive for example, a solvent-containing
  • a polymerization adhesive for example, a cyanoacrylate adhesive, a methyl methacrylate adhesive, an anaerobic curing adhesive, an unsaturated polyester, a radiation curing adhesive, a polycondensation adhesive, for example, a phenol-formaldehyde resin adhesive, a silicone, a silane-blackening polymer adhesive
  • Polyimide adhesive for example, an epoxy adhesive, a polyurethane adhesive, a silicone
  • Pressure-sensitive adhesive have or be formed from it.
  • an adhesive layer may additionally comprise thermally conductive particles.
  • Thermally conductive particles may comprise or be formed from one of the following substances: carbon nanotube, diamond, copper, boron nitride, aluminum, aluminum nitride, and / or aluminum oxide.
  • thermally conductive particles may range from about 28 W / mK to about 1120 W / mK.
  • Fig.l shows a schematic cross-sectional view of an optoelectronic component according to various
  • the optoelectronic component 100 may be formed as an organic light-emitting diode 100, an organic photodetector 100 or an organic solar cell.
  • An organic light emitting diode 100 may be formed as a top emitter or a Bo tom emitter. In a bottom emitter, light is emitted from the electrically active region through the
  • Carrier emitted.
  • light is emitted from the top of the electrically active region and not by the carrier.
  • a top emitter and / or bottom emitter may also be optically transparent or optically translucent, for example, any of those described below
  • Layers or structures may be transparent or translucent.
  • the optoelectronic component 100 has a hermetically sealed substrate 130, an active region 106 and an encapsulation structure 128.
  • the hermetically sealed substrate 130 may include a carrier 102, a first barrier layer 104, and an intermediate structure 126.
  • the active region 106 is an electrically active region 106 and / or an optically active region 106.
  • the active region 106 is, for example, the region of the optoelectronic component 100 in which electrical current flows for operation of the optoelectronic component 100 and / or in the electromagnetic radiation is generated and / or absorbed.
  • the electrically active region 106 may include a first electrode 110, an organic functional layer structure 112, and a second electrode 114.
  • the organic functional layer structure 106 may include one, two or more functional layered structure units and one, two or more interlayer structures between the layered structure units.
  • Functional layer structure 112 may include, for example, a first organic functional layer structure unit 116, an intermediate layer structure 118, and a second organic functional layer structure unit 120.
  • the encapsulation structure 128 may be a second
  • Barrier layer 108 ( a coherent connection layer 122 and a cover 124 have.
  • Embodiments of the intermediate structure 126 are described in FIGS. 2 and 3.
  • the carrier 102 may be glass, quartz, and / or a
  • the carrier may comprise or be formed from a plastic film or a laminate with one or more plastic films.
  • the plastic may include or be formed from one or more polyolefins (eg, high or low density polyethylene (PE) or polypropylene (PP))
  • Polyvinyl chloride PVC
  • PS polystyrene
  • PC polycarbonate
  • PET polyethylene terephthalate
  • the carrier 102 may comprise or be formed of a metal, for example copper, silver, gold, platinum, iron, for example a metal compound, for example steel.
  • the carrier 102 may be opaque, translucent or even transparent.
  • the carrier 102 may be part of or form part of a mirror structure.
  • the carrier 102 may have a mechanically rigid region and / or a mechanically flexible region or be formed in such a way, for example as a foil.
  • the carrier 102 may be formed as a waveguide for electromagnetic radiation, for example, be transparent or translucent with respect to the emitted or
  • the first barrier layer 104 may be one of the following materials on iron or formed therefrom:
  • Indium zinc oxide aluminum-doped zinc oxide, poly (p-phenylene terephthalamide), nylon 66, and mixtures and
  • the first barrier layer 104 may be by means of one of
  • Atomic layer deposition Atomic Layer Deposition (ALD)
  • ALD Atomic layer deposition
  • PEALD Plasma Enhanced Atomic Layer Deposition
  • PECVD Plasma Enhanced Chemical Vapor Deposition
  • Partial layers all sub-layers can by means of an atomic layer deposition process are formed.
  • Layers that are only on ALD layers can also be called
  • Partial layers may have one or more
  • Atomic layer deposition processes are deposited
  • the first barrier layer 104 may have a layer thickness of about 0.1 nm (one atomic layer) to about 1000 nm
  • a layer thickness of about 10 nm to about 100 nm for example, a layer thickness of about 10 nm to about 100 nm according to an embodiment
  • the first barrier layer 104 may be one or more
  • having high refractive index materials for example one or more high refractive index materials, for example having a refractive index of at least 2.
  • Barrier layer 104 can be omitted, for example, in the event that the carrier 102 hermetically sealed
  • the first electrode 104 may be formed as an anode or as a cathode.
  • the first electrode 110 may include or be formed from one of the following electrically conductive materials: a metal, a conductive conductive oxide (TCO); a network of metallic
  • Nanowires and particles for example of Ag, which are combined, for example, with conductive polymers; a network of carbon nanotubes that for example, combined with conductive polymers; Graphene particles and layers; a network
  • the first electrode 110 made of a metal or a metal may comprise or may be formed from one of the following materials: Ag, Pt, Au, Mg, Al, Ba, In, Ca, Sm or Li, as well as compounds, combinations or alloys of these materials ,
  • the first electrode 110 may be one of the following as a transparent conductive oxide
  • zinc oxide for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO).
  • binary oxide for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO).
  • binary oxide for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO).
  • binary oxide for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO).
  • Metal-oxygen onnectivity such as ZnO, Sn02, or 1 ⁇ 0 3
  • ternary metal-oxygen compounds such as AIZnO, n2Sn0 4, CdS O ß, ZnSn0 3, Mgln20 4,
  • Embodiments are used. Farther
  • the TCOs do not necessarily correspond to a stoichiometric composition and can furthermore be p-doped or n-doped, or hole-conducting (p-TCO) or electron-conducting (n-TCO).
  • the first electrode 110 may be a layer or a
  • the first electrode 110 may be formed by a stack of layers of a combination of a layer of a metal on a layer of a TCO, or vice versa.
  • An example is one
  • the first electrode 104 may, for example, have a layer thickness in a range of 10 nm to 500 nm, for example, from less than 25 nm to 250 nm, for example from 50 nm to 100 nm.
  • the first electrode 110 may be a first electrical
  • FIG. 1 shows an optoelectronic component 100 having a first organic functional layer structure unit 116 and a second organic functional one
  • Layer structure 112 but also have more than two organic functional layer structures, for example, 3, 4, 5, 6, 7, 8, 9, 10, or even more, for example 15 or more, for example 70.
  • Layer structures may be the same or different, for example the same or different
  • the second organic functional layer structure unit 120, or the other organic functional layer structure units may be one of those described below
  • Layer structure unit 116 may be formed.
  • the first organic functional layer structure unit 116 may include a hole injection layer, a
  • one or more of said layers may be provided, wherein the same layer may have a physical contact, may only be electrically connected to each other or even electrically isolated from each other, for example, may be arranged side by side. Individual layers of said layers may be optional.
  • a hole injection layer may be formed on or over the first electrode 110.
  • the hole injection layer may include or be formed from one or more of the following materials; HAT-CN, Cu (I) pFBz, MoO x, W0 X, X V0, ReO x, F4-TCNQ, NDP-2, NDP-9, Bi (III) pFBz, F16CuPc; NPB ( ⁇ , ⁇ '-bis (aphthalen-1-yl) -N, N'-bis (phenyl) benzidine); beta-NPB ⁇ , ⁇ '-bis (naphthalen-2-yl) - ⁇ , ⁇ '-bis (phenyl) -benzidine); TPD ⁇ , ⁇ '-bis (3-methylphenyl) - ⁇ , ⁇ '-bis (phenyl) benzidine); Spiro TPD (N, N'-bis (3-methylphenyl) - ⁇ , ⁇ '-bis (phenyl) benzidine);
  • Spiro-NPB N, N 1 -bis (naphthalen-1-yl) - ⁇ , ⁇ '-bis (phenyl) -spiro); D FL-TPD ⁇ , ⁇ '-bis (3-methylphenyl) - ⁇ , ⁇ '-bis (phenyl) -9,9-dimethyl-fluorene); DMFL-NPB ( ⁇ , ⁇ '-bis (naphthalen-1-yl) - ⁇ , ⁇ '-bis (phenyl) -9,9-dimethyl-fluorene); DPFL-TPD ( ⁇ , ⁇ '-bis (3-methylphenyl) - ⁇ , ⁇ '-bis (phenyl) -9, -diphenyl-fluorene) DPFL-NPB ( ⁇ , ⁇ '-bis (naphthalene-1-yl) - ⁇ , ⁇ '-bis (phenyl) -9,9-diphenyl-fluorene); Spiro-TAD (2
  • the hole injection layer may have a layer thickness in a range of about 10 nm to about 1000 nm, for example in a range of about 30 nm to about 300 nm, for example in a range of about 50 nm to about 200 nm.
  • a layer thickness in a range of about 10 nm to about 1000 nm, for example in a range of about 30 nm to about 300 nm, for example in a range of about 50 nm to about 200 nm.
  • Hole transport layer be formed.
  • Hole transport layer may comprise or be formed from one or more of the following materials: NPB (N, '- bis (naphthalen-1-yl) - ⁇ , ⁇ '-bis (phenyl) -benzidine); beta-NPB N, '-Bis (naphthalen-2-yl) -N, N'-bis (phenyl) -benzidine); TPD
  • Spiro-NPB N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -spiro
  • DMFL-TPD ⁇ , ⁇ '-bis (3-methylphenyl) - ⁇ , ⁇ '-bis (phenyl) -9,9-dimethyl-fluorene
  • DMFL-NPB ⁇ , ⁇ '-bis (naphthalen-l-yl) - ⁇ , ⁇ '-bis (phenyl) -, 9-dimethyl-fluorene
  • DPFL-TPD ⁇ , ⁇ '-bis (3-methylphenyl) -N, N 1 -bis (phenyl) -9,9-dipheny1-fluorene
  • DPFL-NPB ⁇ , ⁇ '-bis (naphthalen-1-yl) -N, '-bis (phenyl) -9, 9-diphenyl-fluorene
  • the hole transport layer may have a layer thickness in a range of about 5 nm to about 50 nm,
  • nm for example, in a range of about 10 nm to about 30 nm, for example about 20 nm.
  • functional layer structure units 116, 120 can each have one or more emitter layers
  • An emitter layer may include or be formed from organic polymers, organic oligomers, organic monomers, small organic molecules, or a combination of these materials.
  • the optoelectronic component 100 can in a
  • Emitter layer comprise or be formed from one or more of the following materials: organic or
  • organometallic compounds such as derivatives of polyfluorene, polythiophene and polyphenylene (for example 2- or 2,5-substituted poly-p-phenylenevinyiene) and also metal complexes, for example iridium complexes such as blue-phosphorescent FIrPic (bis (3,5-difluoro-2 - (2-pyridyl) henyl- (2-carboxypyridyl) -iridium III), green phosphorescent
  • non-polymeric emitters can be deposited by means of thermal evaporation, for example.
  • Polymer emitter are used, which can be deposited, for example by means of a wet chemical process, such as a spin-on process (also referred to as spin coating).
  • the emitter materials may be suitably embedded in a matrix material, for example one
  • Emitter layer 134 have a layer thickness in one
  • the emitter layer may have single-color or different-colored (for example blue and yellow or blue, green and red) emitting emitter materials.
  • the emitter layer may have single-color or different-colored (for example blue and yellow or blue, green and red) emitting emitter materials.
  • Emitter layer have multiple sub-layers that emit light of different colors. By mixing the different colors, the emission of light can result in a white color impression.
  • it can also be provided to arrange a converter material in the beam path of the primary emission produced by these layers, which at least partially absorbs the primary radiation and emits a secondary radiation of a different wavelength, resulting in a (not yet white) primary radiation by the combination of primary radiation and secondary radiation Radiation produces a white color impression.
  • the organic functional layer structure unit 116 may include one or more emitter layers configured as a hole transport layer.
  • the organic functional layer structure unit 116 may comprise one or more emitter layers, which is / are embodied as an electron transport layer. On or above the emitter layer, a
  • Be formed electron transport layer for example, be deposited.
  • the electron transport layer may include or be formed from one or more of the following materials: NET- 18; 2, 2 ', 2 "- (1,3,5-benzinetriyl) tris (1-phenyl-1H-benzimidazoles), 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3 , 4-oxadiazoles, 2, 9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP); 8-hydroxyquinolinolato-1-lithium, 4- (naphthalen-1-yl) -3,5-diphenyl-4H- 1, 2, 4-triazoles; 1, 3-bis [2- (2,2'-bipyridine-6-yl) -1,3,4-oxadiazo-5-yl] benzene, 4,7-diphenyl- 1, 10-phenanthrolines (BPhen); 3- (4-biphenylyl) -4-phenyl-5-tert-butylphenyl-1,
  • the electron transport layer may have a layer thickness
  • nm in a range of about 5 nm to about 50 nm, for example, in a range of about 10 nm to about 30 nm, for example about 20 nm.
  • the electron transport layer may be a
  • Electron injection layer may be formed.
  • the electron injection layer may have a layer thickness in a range from about 5 nm to about 200 nm, for example in a range from about 20 nm to about 50 nm, for example about 30 nm.
  • the second organic functional layer structure unit 120 may be formed above or next to the first functional layer structure units 116. Electrically between the organic functional Layer structure units 116, 120 may be a
  • Interlayer structure 118 may be formed.
  • Interlayer structure 118 may be formed as an intermediate electrode 118, for example according to one of
  • Intermediate electrode 118 may be electrically connected to an external voltage source.
  • the external voltage source may provide, for example, a third electrical potential at the intermediate electrode 118.
  • the intermediate electrode 118 may also have no external electrical connection, for example by the intermediate electrode having a floating electrical potential.
  • Interlayer structure 118 may be formed as a charge generation layer (CGL) charge generation layer structure 118.
  • a charge carrier pair generation layer structure 118 may be one or more.
  • the charge carrier pair generation layer (s) and the hole-conducting charge carrier pair generation layer (s) may each be formed of an intrinsically conductive substance or a dopant in a matrix.
  • the charge carrier pair generation layer structure 118 should have regard to the energy levels of the electron-conducting charge carrier pair generation layer (s) and the hole-conducting charge carrier pair
  • Generation layer (s) may be formed such that at the interface of an electron-conducting charge carrier pair generation layer with a hole-conducting charge carrier pair generation layer, a separation of electron and hole can take place.
  • the carrier pair generation layer structure 118 may further include a sandwich between adjacent layers
  • Each organic functional layer structure unit 116, 120 may, for example, have a layer thickness of at most approximately 3 ⁇ m, for example a layer thickness of at most approximately 1 ⁇ m, for example a layer thickness of approximately approximately 300 nm.
  • the optoelectronic component 100 can optionally have further organically functional layers, for example arranged on or above the one or more
  • the further organically functional layers can be, for example, internal or external coupling / decoupling structures, which are the
  • the second electrode 114 may be formed.
  • the second electrode 114 may be formed according to any one of the configurations of the first electrode 110, wherein the first electrode 110 and the second electrode 114 may be the same or different.
  • the second electrode 114 may be formed as an anode, that is, as a hole-injecting electrode, or as a cathode, that is, as one
  • the second electrode 114 may have a second electrical connection to which a second electrical connection
  • the second electrical potential can be applied.
  • the second electrical potential may be from the same or another source of energy
  • the second electrical potential may be different from the first electrical potential and / or the optional third be electrical potential.
  • the second electrical potential may, for example, have a value such that the
  • Difference to the first electrical potential has a value in a range of about 1.5 V to about 20 V, for example, a value in a range of about 2.5 V to about 15 V, for example, a value in a range of about 3 V. up to about 12 V.
  • the second barrier layer 108 may be formed.
  • the second barrier layer 108 may also be referred to as
  • TFE Thin film encapsulation
  • the second barrier layer 108 may be formed according to one of the embodiments of the first barrier layer 104.
  • Barrier layer 108 can be dispensed with.
  • the optoelectronic component 100 may, for example, have a further encapsulation structure, as a result of which a second barrier layer 108 may become optional, for example a cover 124, for example one
  • one or more input / output coupling layers may be formed in the optoelectronic component 100, for example an external outcoupling foil on or above the carrier 102 (not shown) or an internal one
  • Decoupling layer (not shown) in the layer cross section of the optoelectronic component 100.
  • the input / output coupling layer can Matri and distributed therein
  • Antireflection layers for example, combined with the second barrier layer 108) in the optoelectronic
  • Component 100 may be provided.
  • a conclusive one may be on or above the second barrier layer 108
  • Bonding layer 122 may be provided, for example, an adhesive or a paint.
  • a cover 124 can be connected to the second barrier layer 108, for example glued on.
  • transparent material can be particles
  • the coherent bonding layer 122 can act as a scattering layer and improve the colorangle distortion and the
  • light scattering particles may be dielectric
  • Metal oxide for example silicon oxide (SiC ⁇ ), zinc oxide (ZnO), zirconium oxide (ZrO 2), indium tin oxide (ITO) or indium zinc oxide (IZO), gallium oxide (Ga 2 O x ) aluminum oxide, or titanium oxide.
  • Other particles may also be suitable as long as they have a refractive index which is different from the effective refractive index of the matrix of the coherent bonding layer 122, for example air bubbles, acrylate or glass bubbles.
  • metallic nanoparticles, metals such as gold, silver, iron nanoparticles, or the like may be provided as light-diffusing particles.
  • the coherent bonding layer 122 can iron a layer thickness of greater than 1 ⁇ , for example, a
  • the interlocking tie layer 122 may include or be a lamination adhesive.
  • the coherent bonding layer 122 may be so
  • Such an adhesive may, for example, be a low-refractive adhesive such as an acrylate having a refractive index of about 1.3.
  • the adhesive can also be a high-index adhesive, for example
  • a plurality of different adhesives may be provided which form an adhesive layer sequence.
  • an electrically insulating layer (not limited to
  • SiN for example, SiN, for example, with a layer thickness in a range of about 300 nm to about 1.5 ⁇ , for example, having a layer thickness in a range of about 500 nm to about 1 ⁇ to electrically unstable materials
  • a cohesive interconnect layer 122 may be optional, for example, if the cover 124 is formed directly on the second barrier layer 108, such as a glass cover 124 formed by plasma spraying.
  • the electrically active region 106 may also be a so-called getter layer or getter structure,
  • a laterally structured getter layer may be arranged (not shown).
  • the getter layer may include or be formed of a material that absorbs and binds substances that are detrimental to the electrically active region 106.
  • a getter layer may include or be formed from a zeolite derivative. The getter layer can
  • the getter layer may have a layer thickness of greater than about 1 ⁇ , for example, a layer thickness of several ⁇ ..
  • the getter layer may include a lamination adhesive or may be embedded in the interlocking tie layer 122.
  • a cover 124 may be formed on or above the coherent connection layer 122.
  • the cover 124 can be connected to the electrically active region 106 by means of the interlocking connection layer 122 by means of a coherent connection and protect it from harmful substances.
  • the cover 124 may, for example, a
  • Glass cover 124 a metal foil cover 124 or a sealed plastic film cover 124.
  • Glass cover 124 may, for example, by means of a glass frit bonding / glass soldering / seal glass bonding using a conventional glass solder in the geometric edge regions of the organic
  • Barrier layer 108 and the electrically active region 106 are connected.
  • FIGS. 2A-D show schematic cross-sectional views
  • the optoelectronic component 100 may be formed, for example, as an organic light-emitting diode 100.
  • An organic light emitting diode 100 may be formed as a surface light source 100, for example, flat and planar.
  • the luminance of the surface light source can be increased and the impression of a flat light source can be obtained.
  • the intermediate structure 126 may include a first region 204 and a second region 202.
  • the first region 204 is connected to a carrier 102, for example by means of a cohesive connection, for example cohesively.
  • the electrically active region 106 is formed on the second region 202.
  • the electrically active region 106 may according to one of the embodiments of the description of FIG.
  • the second region has a curvature such that the amount of area of the second region 202 is greater than the amount of the area of the first region 204 and / or 202 greater than the magnitude of the surface of the first region
  • the intermediate structure 126 may be a microstructured
  • the optically active region 106 is formed directly on the carrier 102, the contact area of the optically active region 106 on the intermediate structure 126 is increased.
  • the optically active region is formed plane-parallel on the second region 202, so that the surface of the optically active region 106, the shape of the second
  • Area 202 replicates.
  • An optoelectronic component for example an organic light-emitting diode, has a round, optically active side with a radius r of 0.5 cm.
  • an optically active side with a radius r of 0, 5 cm the surface
  • A2 1.57 cm.
  • the amount of the surface of the optically active side can be increased, for example, can be doubled.
  • an intermediate structure 126 in the form of a half ball lens or a plurality of half ball lenses the amount of the area of the contact surface of the optically active region 106 with the substrate can be increased, wherein the area impression of the optoelectronic component
  • an organic light-emitting diode of 20 cm can be deposited without giving up the impression of a flat light tile.
  • densest ball packing be formed, for example, as an arrangement of
  • the effective increase in the area of the optically active side is reduced by means of the free areas of the carrier 102 between the hemispheres.
  • the minimum increase in the area of the optically active side can be achieved by means of the arrangement of the hemisphere on a square
  • a kind of hemisphere may have a radius in a range of approximately 0.5 ⁇ and 2000 ⁇ ,
  • the intermediate structure 126 may include a plurality of half spherical lenses having a second radius of curvature. The second radius of curvature is smaller than the first one
  • the contact area with the optically active region 106 can be increased and the total thickness of the optoelectronic component 100 can be reduced.
  • the intermediate structure 126 may be transparent with respect to the electromagnetic radiation emitted and / or absorbed by the optically active region 106. This allows the optoelectronic component for example as a bottom emitter and / or a
  • transparent intermediate structure 106 may be formed, for example, as a waveguide.
  • a waveguide is a conductor for conducting
  • the waveguide is a
  • Optical waveguide takes place internally in the waveguide, inter alia due to internal reflection on an outer wall of the waveguide.
  • the outer wall may also be referred to as an interface, for example due to internal total reflection due to an angle of incidence of the
  • the waveguide has a refractive index greater than that
  • the outer wall of the waveguide may be mirrored with a mirror structure.
  • the waveguide may comprise or be optically connected to fibers, a tube or a rod which transport the electromagnetic radiation over a distance.
  • the waveguide may also be referred to as optical fiber, optical fiber, beam conductor or optical fiber.
  • the waveguide may, for example, plastic, such as poly ere fibers, PMMA, polycarbonate and / or hard-clad waveguide (hard clad silica) have.
  • the waveguide can be used as a planar waveguide
  • a planar waveguide extends flat in two spatial directions, for example
  • the intermediate structure 126 may be made translucent with respect to the electromagnetic radiation emitted by the optically active region 106 is emitted and / or absorbed.
  • the intermediate structure 126 may comprise particles embedded in a matrix. The particles and the matrix can have a difference in refractive index
  • the particles may have a mean diameter d50 in one
  • the particles can be designed as scattering centers
  • Particles with a mean diameter of less than 100 nm can contribute to changing the refractive index of the matrix.
  • the particles can be one of the following
  • geometric shapes have geometric shapes and / or part of one of the following geometric shapes: spherical, aspherical
  • the intermediate structure 126 may be birefringent with respect to the electromagnetic radiation emitted and / or absorbed by the optically active region 106.
  • the intermediate structure 126 opaque and / or impermeable
  • intermediate structure 126 as a
  • a mirror structure may be formed as an optical grating, a metallic mirror, a photonic crystal or a totally reflecting interface.
  • a mirror structure can be complete or partial
  • the partially transparent mirror structure may be, for example, a divider mirror and / or a disposable mirror.
  • the partially transparent mirror structure may, for example, be a part of the incident on it
  • the partially transparent mirror structure may, for example, on one side a dielectric layer system and / or optionally on the other side a reflection-reducing coating, for example to avoid double images.
  • a very thin metal coating can also be used.
  • the intermediate structure 126 may be used as a
  • Heat distribution structure 126 may be formed.
  • the intermediate structure 126 may be formed as a metal film, for example, with aluminum, silver and / or magnesium, and a thickness of about 100 nm or thicker;
  • Thermal conductivity and layer thickness greater than about 0.01 mW / K, for example greater than about 1 mW / K,
  • they may range from about 10 mW / K to about 100 mW / K. This allows the
  • Waste heat distribution of the optoelectronic component 100 can be improved.
  • the intermediate structure 126 may be electrically conductive, for example according to one of the embodiments of the first electrode 110 of the optically active region 106 (see description of FIG. 1).
  • the intermediate structure 126 may serve as a diffusion barrier
  • first barrier layer 104 be formed in terms of water and / or oxygen, For example, according to one embodiment of the description of the first barrier layer 104.
  • the intermediate structure 126 may include or be formed from a phosphor.
  • a fluorescent can be any fluorescent
  • Ce-doped garnets such as YAG: Ce and LuAG
  • Nitrides for example CaAlSi 3: Eu, (Ba, Sr) 2 15 8: Eu;
  • Eu doped sulfdides SIONe, SiAlON, orthosilicates,
  • the intermediate structure 126 may be formed as a UV protection 126, for example comprising or formed from a substance that absorbs UV radiation.
  • the intermediate structure 126 may be used as a color-changing
  • Layer be formed, for example, have a dye.
  • the dye By means of the dye, the optical
  • the dye may be electromagnetic radiation in an application-specific not relevant
  • the optical appearance of the optoelectronic component can be changed, for example, it can be colored without impairing the efficiency in a region which is technically relevant for the application of the optoelectronic component.
  • the intermediate structure as a
  • Temperature measuring structure may be formed, for example, have a thermoelectric structure or be formed therefrom.
  • a thermoelectric structure can form an electrical potential difference by means of a temperature difference or a temperature difference by means of an electrical potential difference.
  • the potential difference can lead to the formation of an electric current.
  • the relationship between temperature and electricity can be described physically by means of the Seebeck effect, Peltier effect or Thomson effect.
  • the thermoelectric structure may comprise or be formed from one of the following substances and mixtures and alloys thereof:
  • Silicon a bismuth cahlkogenid, for example Bi2 e3, Bi2Se3; a lead telluride, for example PbTe, doped
  • P ei- ⁇ (B selenium, sodium and / or thallium); a silicide; a silicon germanium alloy; an inorganic one
  • Mg2ß IV with B I Si, Ge, Sn, for example, doped Mg2Sii .. x Sn x; a skutterudite, for example LM4X12 with L a rare earth metal, M a transition metal, X a metalloid, a group V element or a pnictogen (nitrogen class element, for example phosphorus, antimony or arsenic),
  • thermoelectric oxide composite for example a homologous oxide of the form (S TiO 3) n (SrO) m of the Ruddleson popper phase, NaxCoO 2; or an electrically conductive, organic material.
  • the curvature of the second region 202 may be formed by means of an at least partially spherical shape of the intermediate structure 126.
  • the intermediate structure 216 may include
  • a curvature can also be formed by means of one or more of the following structures: a cone, a
  • Truncated cone a hemisphere, a spherical stump
  • Trench structure a grid or grooves with straight or inclined flanks and curved edges; star-shaped; a freeform surface.
  • an optically active region 106 should be able to be formed on these structures.
  • the optically active region 106 may be the curved region of the
  • Intermediate structure 126 partially (shown schematically in Figure 2B) or completely (shown schematically in Fig. 2C) cover.
  • the second region 202 may have a wave structure (shown schematically in FIG. 2C).
  • the intermediate structure 126 may have a thickness in a range of about 0.5 ⁇ to about 2000 ⁇ .
  • the intermediate structure 126 may be laterally structured.
  • the lateral structuring can be used, for example, to display information, for example in the form of a pictogram, an ideogram and / or a
  • the lateral structuring may include a first structural region 206 and at least one second structural region 206
  • Structure region 206 and the second structure portion 208 have a different curvature.
  • the structure region 206 and the second structure region 208 may differ at least in the amount of a radius of curvature and / or in the sign of a radius of curvature. In the exemplary embodiment illustrated in FIG. 2C, by means of a first structural region 206 and a second structural region
  • FIG. 2D the curvature in the first structural region 206 and in the second structural region 208 have different radii of curvature. Furthermore, the first structure region 206 and the second structure region 208 have a different arrangement, for example a differently dense packing of
  • Structural region 208 may have a plurality of regions each having the same curvature - for the first region in FIG.
  • the ratio of the area of the second area 202 to the first area 204 can be greater in the first structure area 206 than in the second structure area 208.
  • the radius of curvature in the first structure area 206 can be smaller than in the second structure area 208.
  • the lateral structuring can be used as an arrangement of the first Structure area 206 and / or at least a second structure area 208 may be realized.
  • electromagnetic radiation emitted by the optically active region 106 may be larger in the first structure region 206 than in the second structure region 208.
  • the first structure region 206 may have a higher luminance than the second structure region 208.
  • the lateral structuring may, for example, have a periodic arrangement of first structural region 206 and / or at least one second structural region 208.
  • a different arrangement of the first structure region 206 and the second structure region 208 can be realized, for example, by means of a different periodicity.
  • Periodicity can be understood as a mean, repetitive distance between individual structures, For example, as a mean distance of half ball lenses from each other (see Fig. 2D). A portion of the carrier 102 may also be exposed from intermediate structure 126,
  • first structural area 206 for example, free of first structural area 206 and / or second structural area 208.
  • Structure area 208 may be on and / or adjacent to the first
  • Structure area 206 may be formed, for example, to increase the amount of the surface of the optically active side.
  • the intermediate structure 126 may be formed such that the curvature is changeable, for example chemically, electrically, optically and / or thermally. Changing the curvature chemically may be accomplished, for example, by changing the conductivity by altering an ion concentration, changing the water content, and / or the pH in the intermediate structure 126. An electrical change can take place, for example, by means of a change in an electric field, for example piezoelectrically. Optically changing the curvature can
  • the intermediate structure 126 is formed of a substance or mixture of substances whose refractive index is nonlinear from the intensity of a
  • a thermal change of the curvature can by means of a
  • thermal expansion for example
  • thermoelectric or by heating.
  • the intermediate structure 126 may be electrically insulated or formed from an electrically insulating material.
  • the intermediate structure 126 may have a refractive index that is between the refractive index of the carrier and the mean refractive index of the optically active region.
  • Optoelectronic device as Bo tom emitter be formed.
  • 3 shows a schematic representation of a method for producing an optoelectronic component according to various exemplary embodiments.
  • the method 300 includes forming 302 a
  • the intermediate structure 126 is formed to include a first region 204 and a second region 202.
  • the first region 204 is connected to the carrier 102.
  • the optically active region 106 is formed on the second region 202.
  • the intermediate structure 126 is formed such that the second region 202 has at least one curvature such that the magnitude of the area of the second region 202 is greater than the magnitude of the area of the first region 204.
  • the formation 302 of the curvature of the intermediate structure 126 may, for example, during the application of the substance or of the substance mixture of the intermediate structure by means of a
  • Intermediate structure may be a molding compound, for example a gel, a silicone, an epoxy or the like.
  • the molding compound may be plastic for forming the intermediate structure 126
  • the formation 302 of the curvature of the intermediate structure 126 may take place after the application of the substance or the substance mixture of the intermediate structure, for example by means of a removal, a compression and / or a degumming (decompression), for example by means of a ballistic exposure, for example a laser ablation; and / or a textured stamp.
  • a ballistic exposure of the areas to be exposed can be achieved, for example, by bombardment of the area to be exposed with particles, molecules, atoms, ions, electrons and / or photons.
  • a laser ablation is a
  • a laser having a wavelength in a range of about 200 nm to about 1700 nm for example, focused, for example, with a
  • Focusing diameter in a range of about 10 ⁇ to about 2000 ⁇ for example, pulsed, for example, with a pulse duration in a range of about 100 fs to about 0, 5 ms, for example with a power of about 50 mW to about 1000 mW, for example with a Power density of about 100 kW / cm 2 to about
  • the method 300 includes forming 304 an optically active region 106 on the intermediate structure 126.
  • the optically active region 106 may be formed according to one of the embodiments of the description of FIG. In various embodiments, a
  • Optoelectronic component device and a method for producing an optoelectronic
  • Luminous area is significantly increased, the "lumen output", that is, the amount of lumens per unit area, the OLED can be increased accordingly for the same area without the
  • the efficiency of the OLED remains at least equal or increases, since the efficiency of the light conversion of electrical in optical performance is not affected by the area.
  • OLEDs operating at lower voltage can be more efficient.
  • the impression of a flat surface is maintained.
  • the effectiveness of the OLED increases.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

Dans différents exemples de réalisation, l'invention concerne un composant optoélectronique (100) qui comprend une zone optiquement active (106) sur un substrat (130). Le substrat (130) comporte un support (102) et une structure intermédiaire (126). La structure intermédiaire (126) comprend une première zone (204) et une deuxième zone (202). La première zone (204) est reliée au support (102) et la zone optiquement active (106) est formée sur la deuxième zone (202). La deuxième zone (202) présente au moins une courbure, de sorte que l'aire de la deuxième zone (202) est plus grande que l'aire de la première zone (204).
PCT/EP2014/060153 2013-05-21 2014-05-16 Composant optoélectronique et procédé de fabrication d'un composant optoélectronique WO2014187752A1 (fr)

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DE102014100747A1 (de) * 2014-01-23 2015-07-23 Osram Oled Gmbh Optoelektronische Bauelemente und Verfahren zum Herstellen optoelektronischer Bauelemente
DE102015111564A1 (de) * 2015-07-16 2017-01-19 Osram Oled Gmbh Organisches optoelektronisches Bauteil und Herstellungsverfahren hierfür
DE102015114844A1 (de) 2015-09-04 2017-03-09 Osram Oled Gmbh Organische Leuchtdiode und Fahrzeugaußenbeleuchtung

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EP2515344A1 (fr) * 2009-12-15 2012-10-24 Sony Corporation Élément de conversion photoélectrique et procédé de fabrication d'élément de conversion photoélectrique
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