WO2014187101A1 - 一种igbt串联型电压源换流器开通电流过冲抑制方法 - Google Patents

一种igbt串联型电压源换流器开通电流过冲抑制方法 Download PDF

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WO2014187101A1
WO2014187101A1 PCT/CN2013/088397 CN2013088397W WO2014187101A1 WO 2014187101 A1 WO2014187101 A1 WO 2014187101A1 CN 2013088397 W CN2013088397 W CN 2013088397W WO 2014187101 A1 WO2014187101 A1 WO 2014187101A1
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stray capacitance
voltage source
current
overshoot
reactor
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French (fr)
Inventor
温家良
杨杰
药韬
贾娜
郭高朋
吴婧
王宇
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State Grid Smart Grid Research Institute of SGCC
State Grid Corp of China SGCC
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State Grid Smart Grid Research Institute of SGCC
State Grid Corp of China SGCC
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/538—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a push-pull configuration
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08148—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in composite switches

Definitions

  • the present invention relates to the field of power systems and power electronics, and in particular to a method for suppressing the on-current overshoot of an IGBT series voltage source converter. Background technique
  • the voltage source converter can independently control the active and reactive power to realize the rapid flip of the power flow, which has attracted more and more attention in the field of DC transmission.
  • IGBT series voltage source converter which can greatly simplify the main circuit structure, greatly reduce the control complexity, and greatly reduce the required components, thus making the device more compact. , the floor space is greatly reduced.
  • IGBT series converters will be more widely used.
  • the primary equipment in the inverter such as the commutating reactor and the bushing, has a certain stray capacitance to the ground, and the high-voltage high-power IGBT series voltage source converter operates in the switching state, and the dv/dt generated by the inverter acts on the switch.
  • the stray capacitance current overshoot occurs when the device is turned on. As the voltage level increases, the current overshoot will become larger and larger, and eventually it can even exceed the IGBT withstand current, which seriously affects the normal operation of the inverter. Therefore, we need to take appropriate measures to reduce the effects of stray capacitance.
  • the object of the present invention is to provide an IGBT series voltage source converter open current overshoot suppression method, which utilizes the principle of second-order circuit step response to realize current overshoot caused by stray capacitance.
  • the effective suppression provides a reliable guarantee for the operation of the IGBT series voltage source converter.
  • An IGBT series voltage source converter open current overshoot suppression method the system used for the method is an IGBT series voltage source converter suppression system, which is used for a power system with a voltage level of ⁇ 10 kV or more; includes: a reactor a capacitor series branch, a half bridge structure, a stray capacitance (3 ⁇ 4, an inductance L and a voltage source u s ; the reactor-capacitor series branch is connected in parallel with the half bridge structure; the stray capacitance Cg and the voltage source u s Parallel; the inductor L is connected between the stray capacitance (3 ⁇ 4 and the voltage source;
  • the improvement is that a stray capacitor unit is connected between the stray capacitance (3 ⁇ 4 and the half bridge structure, and the stray capacitance C g forms a second-order circuit;
  • the method suppresses the current overshoot current caused by the stray capacitance c g by the step response of the second-order circuit.
  • the blocker unit is composed of a resistor R and an inductor in parallel; the blocker unit operates in two cases:
  • the reactor-capacitor series branch reactor ESL 7 and capacitor C; the reactor ESL 2 and the capacitor C 2 are sequentially connected in series; the reactor-capacitor series branch is grounded;
  • the half bridge structure is composed of an IGBT1 valve module and an IGBT2 valve module in series; the IGBT1 valve module and the IGBT2 valve module are both composed of an IGBT and a diode connected in anti-parallel thereto.
  • the stray capacitance (3 ⁇ 4 and the voltage source are both grounded.
  • the beneficial effects achieved by the invention are:
  • FIG. 2 is a waveform diagram showing changes in the overcurrent of the IGBT valve before and after the installation of the wave blocker according to the present invention. detailed description
  • FIG. 1 is an IGBT series voltage source converter suppression system, and is used for a power system with a voltage level of ⁇ 10 kV or higher. Includes: Reactor-capacitor series branch, half-bridge structure, stray capacitance (3 ⁇ 4, inductor L and voltage source u s ;
  • the reactor-capacitor series branch is connected in parallel with the half bridge structure; the stray capacitance Cg is connected in parallel with the voltage source u s ; the inductor L is connected between the stray capacitance (3 ⁇ 4 and the voltage source;
  • a wave blocker unit is connected between the stray capacitance C g and the half bridge structure, and a second order circuit is formed with the stray capacitance Cg.
  • Cg is the total ground stray capacitance of the commutating reactor 3 ⁇ 4L; and the ESL 2 and the valve side wall bushing.
  • the wave blocker unit is composed of a resistor R and an inductor in parallel.
  • Reactor-capacitor series branch reactor ES, capacitor C; reactor ESL 2 and capacitor C 2 are connected in series; reactor-capacitor series branch grounding; half-bridge structure consists of IGBT1 valve module and IGBT2 valve module in series; The IGBT1 valve module and the IGBT2 valve module are both composed of an IGBT and a diode connected in anti-parallel thereto. Stray capacitance (3 ⁇ 4 and voltage source are both grounded.
  • the current direction shown in Figure 1 be the positive direction of current Ic.
  • the stray capacitance when the voltage across 3 ⁇ 4 changes from negative to positive, the current through the stray capacitance Cg is as shown in the figure, and its size is C*du/dt.
  • the current will be very large. If no limiting measures are taken, this current will fully act on the IGBT valve block of the upper arm, when the DC side voltage is increased to After a certain degree, the current will exceed the tolerance of the IGBT valve, which seriously affects the normal operation of the inverter.
  • the circuit breaker unit is divided into the following Description: (1) When the voltage across the stray capacitance c g does not change, the current basically passes through the inductance therein and the inductance is much smaller than the commutating reactor, which basically has no effect on the normal operation of the circuit.
  • the invention provides a novel limiting method for suppressing the on-current overshoot of an IGBT series voltage source converter, and utilizes the principle of the second-order circuit step response to effectively suppress the current overshoot caused by the stray capacitance. It provides a reliable guarantee for the operation of the IGBT series voltage source converter.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Inverter Devices (AREA)
  • Dc-Dc Converters (AREA)

Abstract

一种绝缘栅双极晶体管（IGBT）串联型电压源换流器（VSC）开通电流过冲抑制方法。该方法在杂散电容（Cg）与半桥结构之间接入阻波器单元，与杂散电容组成二阶电路。该方法通过二阶电路的阶跃响应，对杂散电容引起的电流过冲进行有效抑制，为IGBT串联型电压源换流器的运行提供了可靠的保障。

Description

一种 IGBT串联型电压源换流器开通电流过冲抑制方法
技术领域
本发明涉及电力系统以及电力电子领域，具体涉及一种 IGBT串联型电压源 换流器开通电流过冲抑制方法。 背景技术
电压源换流器能够对有功和无功进行独立控制， 实现潮流的快速翻转， 其在 直流输电领域越来越受到关注。 为满足高压大功率的要求， 有学者提出了 IGBT 串联型电压源换流器，该方式能够使主电路结构大为简化，控制复杂性大幅降低， 所需器件大为减少， 从而使得装置更加紧凑， 占地面积大大减少。在未来的高压 大功率电力电子领域， IGBT串联型换流器将获得更加广泛的应用。
但换流器中的一次设备如换流电抗器、套管等具有一定的对地杂散电容， 高 压大功率 IGBT串联型电压源换流器工作于开关状态， 其产生的 dv/dt作用于杂 散电容上， 会在器件开通时产生电流过冲， 随着电压等级的提高， 电流过冲会越 来越大， 最终甚至能够超过 IGBT的耐受电流， 严重影响换流器的正常工作。 因 此， 我们需要采取相应的措施来降低杂散电容的影响。 目前， 国内尚没有相关的 研究文献及产品。 发明内容
针对现有技术的不足，本发明的目的是提供一种 IGBT串联型电压源换流器 开通电流过冲抑制方法，利用二阶电路阶跃响应的原理， 对杂散电容引起的电流 过冲实现了有效的抑制，为 IGBT串联型电压源换流器的运行提供了可靠的保障。
本发明的目的是采用下述技术方案实现的：
一种 IGBT串联型电压源换流器开通电流过冲抑制方法，所述方法用的系统 为 IGBT串联型电压源换流器抑制系统，用于 ± 10kV以上电压等级的电力系统； 包括： 电抗器-电容串联支路、 半桥结构、 杂散电容 (¾、 电感 L和电压源 us ; 所述电抗器 -电容串联支路与半桥结构并联； 所述杂散电容 Cg和电压源 us 并联； 所述电感 L连接在杂散电容(¾和电压源 之间； 其改进之处在于， 在所述杂散电容(¾与半桥结构之间接入阻波器单元， 与 所述杂散电容 Cg组成二阶电路；
所述方法通过所述二阶电路的阶跃响应， 对杂散电容 cg引起的电流过冲电 流进行抑制。
其中， 所述阻波器单元由电阻 R和电感 并联组成； 所述阻波器单元工作 时包括两种情况：
( 1 ) 当杂散电容 Cg两端电压不发生变化时， 过冲电流流经阻波器单元中 的电感 L1 ; 所述电感！^小于换相电抗器；
( 2) 当杂散电容 (¾两端电压发生变化时， 即为阶跃信号作用与二阶电路， 通过电感！^的电流不发生突变， 过冲电流流经与电感 并联的电阻 R， 电阻 R 吸收过冲电流产生的能量， 抑制对 IGBT1阀模块和 IGBT2阀模块的开通电流过 冲。
其中， 所述电抗器-电容串联支路由电抗器 ESL7、 电容 C；、 电抗器 ESL2和 电容 C2依次串联组成； 电抗器-电容串联支路接地；
所述半桥结构由 IGBT1阀模块和 IGBT2阀模块串联组成；所述 IGBT1阀模 块和 IGBT2阀模块均由 IGBT以及与其反并联的二极管组成。
其中， 所述杂散电容 (¾和电压源 均接地。 与现有技术比， 本发明达到的有益效果是：
1、 在高压 （高压是 ± 10kV以上） 高频率 （1000Hz以上） 的情况下， 有效 抑制了杂散电容对 IGBT开通电流过冲的影响， 为高压 IGBT串联型电压源换流 器的可靠运行提供了一定的保障。
2、 该方法的实现仅需一个电阻与一个电感并联， 结构简单、 价格低廉、 易 于实现。
3、 该方法对杂散电容产生的过冲电流有限制作用， 不会影响电路的正常工 作。 附图说明
图 1是本发明提供的高压 IGBT串联型电压源换流器电流过冲限制方法的实 现结构图
图 2是本发明提供的装设阻波器前后 IGBT阀开通电流过冲的变化波形图。 具体实施方式
下面结合附图对本发明的具体实施方式作进一步的详细说明。
本发明提供的高压 IGBT串联型电压源换流器电流过冲限制方法的实现结构 图如图 1所示， 为 IGBT串联型电压源换流器抑制系统， 用于 ± 10kV以上电压 等级的电力系统； 包括： 电抗器-电容串联支路、 半桥结构、 杂散电容 (¾、 电感 L和电压源 us ;
所述电抗器 -电容串联支路与半桥结构并联； 所述杂散电容 Cg和电压源 us 并联； 所述电感 L连接在杂散电容(¾和电压源 之间；
在杂散电容 Cg与半桥结构之间接入阻波器单元， 与杂散电容 Cg组成二阶 电路。 Cg为换流电抗器 ¾L;和 ESL2以及阀侧穿墙套管的总的对地杂散电容。 阻波器单元由电阻 R和电感 并联组成。 电抗器-电容串联支路由电抗器 ES 、 电容 C；、 电抗器 ESL2和电容 C2依次串联组成； 电抗器-电容串联支路接地； 半 桥结构由 IGBT1阀模块和 IGBT2阀模块串联组成；所述 IGBT1阀模块和 IGBT2 阀模块均由 IGBT以及与其反并联的二极管组成。 杂散电容(¾和电压源 均接 地。
设图 1中所示电流方向为电流 Ic的正方向。当杂散电容 (¾两端电压由负变 正时，通过杂散电容 Cg的电流即为如图所示，其大小为 C*du/dt。对于高压 IGBT 串联型电压源换流器来说， 由于直流侧电压很高， 而且它的工作频率较高， 因此 该电流就会很大。若不采取限制措施，此电流会完全作用于上桥臂的 IGBT阀组， 当直流侧电压提高到一定程度后， 该电流会超过 IGBT阀的耐受能力， 严重影响 换流器的正常工作。
同理， 当杂散电容 Cg 两端电压由正变负时， 大电流完全作用于下桥臂的 IGBT2阀模块， 同样也能对换流器的正常工作产生严重影响。
该电流对上下桥臂均会产生严重影响， 同时为降低成本， 当装设图 1中的阻 波器 Damper后， 其与杂散电容 (¾组成二阶电路。 阻波器单元工作时分为下述 情况： ( 1 ) 在杂散电容 cg两端电压不发生变化时， 电流基本上都通过其中的电 感 并且此电感 远小于换相电抗器，对电路的正常工作基本不会产生影响。
(2) 当杂散电容 Cg两端电压发生变化时， 此时相当于一个阶跃信号作用 于二阶电路， 由于通过电感的电流不会发生突变， 因而大部分的电流会通过与电 感并联的电阻， 电阻会将这部分能量消耗掉， 从而降低其对 IGBT阀模块的开通 电流过冲的影响，从而防止因直流侧电压过高而导致电流过冲超过 IGBT阀模块 的耐受能力， 将器件烧坏， 严重影响换流器的正常工作。 同时， 由于反并联二极 管的钳位作用，阻波器两端的电压不会对 IGBT阀模块的关断电压应力产生影响。 因此，该措施能够为 IGBT的可靠工作提供有效保障，装设阻波器单元前后， IGBT 阀的开通电流过冲变化如图 2所示。
实施例
当加装阻波器单元中的电阻 R为 3k Q、 电感 为 6mH时的电路电流仿真 结果如下表所示： 表 1 各种电路形式电流比较仿真结果
Figure imgf000006_0001
本发明提供的一种新颖的抑制 IGBT串联型电压源换流器开通电流过冲的限 制方法，利用二阶电路阶跃响应的原理， 对杂散电容引起的电流过冲实现了有效 的抑制， 为 IGBT串联型电压源换流器的运行提供了可靠的保障。
最后应当说明的是： 以上实施例仅用以说明本发明的技术方案而非对其限 制，尽管参照上述实施例对本发明进行了详细的说明， 所属领域的普通技术人员 应当理解： 依然可以对本发明的具体实施方式进行修改或者等同替换， 而未脱离 本发明精神和范围的任何修改或者等同替换，其均应涵盖在本发明的权利要求范 围当中。

Claims

权 利 要 求
1、 一种 IGBT串联型电压源换流器开通电流过冲抑制方法， 所述方法用的 系统为 IGBT串联型电压源换流器抑制系统，用于 ±10kV以上电压等级的电力系 统; 包括： 电抗器-电容串联支路、 半桥结构、 杂散电容 Cg、 电感 L和电压源
Us ;
所述电抗器 -电容串联支路与半桥结构并联； 所述杂散电容 Cg和电压源 us 并联； 所述电感 L连接在杂散电容(¾和电压源 之间；
其特征在于， 在所述杂散电容(¾与半桥结构之间接入阻波器单元， 与所述 杂散电容 (¾组成二阶电路；
所述方法通过所述二阶电路的阶跃响应， 对杂散电容 Cg引起的电流过冲电 流进行抑制。
2、 如权利要求 1所述的开通电流过冲抑制方法， 其特征在于， 所述阻波器 单元由电阻 R和电感 并联组成； 所述阻波器单元工作时包括两种情况：
( 1 ) 当杂散电容 Cg两端电压不发生变化时， 过冲电流流经阻波器单元中 的电感！^，所述电感！^小于换相电抗器， 即电感！^在换相电抗器电感值的 5%， 不会对电路的正常工作产生影响；
(2) 当杂散电容 (¾两端电压发生变化时， 即为阶跃信号作用与二阶电路， 通过电感 的电流不发生突变， 过冲电流流经与电感 并联的电阻 R， 电阻 R 吸收过冲电流产生的能量， 抑制对 IGBT1阀模块和 IGBT2阀模块的开通电流过 冲。
3、 如权利要求 1所述的开通电流过冲抑制方法， 其特征在于， 所述电抗器- 电容串联支路由电抗器 ES 、 电容 C；、 电抗器 ESL2和电容 C2依次串联组成； 电抗器-电容串联支路接地；
所述半桥结构由 IGBT1阀模块和 IGBT2阀模块串联组成；所述 IGBT1阀模 块和 IGBT2阀模块均由 IGBT以及与其反并联的二极管组成。
4、 如权利要求 1所述的开通电流过冲抑制方法， 其特征在于， 所述杂散电 容 (¾和电压源 均接地。
PCT/CN2013/088397 2013-05-21 2013-12-03 一种igbt串联型电压源换流器开通电流过冲抑制方法 Ceased WO2014187101A1 (zh)

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