WO2014166766A2 - Procédé d'alimentation d'un processus en gaz vecteur enrichi - Google Patents

Procédé d'alimentation d'un processus en gaz vecteur enrichi Download PDF

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Publication number
WO2014166766A2
WO2014166766A2 PCT/EP2014/056331 EP2014056331W WO2014166766A2 WO 2014166766 A2 WO2014166766 A2 WO 2014166766A2 EP 2014056331 W EP2014056331 W EP 2014056331W WO 2014166766 A2 WO2014166766 A2 WO 2014166766A2
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WO
WIPO (PCT)
Prior art keywords
precursor
carrier gas
bubbler
temperature
enriched
Prior art date
Application number
PCT/EP2014/056331
Other languages
German (de)
English (en)
Other versions
WO2014166766A3 (fr
Inventor
Andreas Koller
Alexander Behres
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Priority to US14/772,679 priority Critical patent/US9914997B2/en
Publication of WO2014166766A2 publication Critical patent/WO2014166766A2/fr
Publication of WO2014166766A3 publication Critical patent/WO2014166766A3/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D1/00—Evaporating
    • B01D1/14—Evaporating with heated gases or vapours or liquids in contact with the liquid
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Definitions

  • a method for supplying a process with an enriched carrier gas is provided. Further, a bubbler for enriching a carrier gas, in such a
  • Another object of the invention to be achieved is to provide an improved apparatus for accumulating a carrier gas. Another task to be solved is to
  • Another object to be solved is an improved control of the
  • liquid precursor is flowed through by the carrier gas, so molecules of the
  • Precursors be transported in the carrier gas.
  • a liquid precursor can also be a solid
  • Precursor be provided.
  • the method described is used, for example, to grow semiconductor layers by means of an MOVPE or a CVD system.
  • organometallic liquid precursors are used as precursor.
  • semiconductor layers for semiconductor lasers and LED structures are produced, for example.
  • An advantage of the method described is that large volume flows of the carrier gas can be provided. In addition, large volume flows of the carrier gas with a constant concentration of Precursors
  • Volume flows of carrier gas can be provided with a constant saturation of precursor.
  • a first device for enriching a carrier gas is provided with a precursor, wherein the first device conducts an enriched carrier gas to a second device.
  • the second device is also designed to be a carrier gas with a precursor
  • the second device conducts the enriched carrier gas to a process, for example a Schichtabschreibelui for optoelectronic
  • a temperature of the first device which is the concentration of the enrichment of the
  • the second device is filled with precursor with the aid of the first device. This is achieved by setting the temperature of the first device so that more precursor is transported from the first device to the second device via the carrier gas, as is delivered from the second device via the carrier gas to the process. Thus, it is not necessary to continuously replenish the second device after initial filling with precursor during operation with precursor.
  • the second device will
  • the second device is supplied with precursor by means of the first device. Because in the second
  • the carrier gas can be further enriched with precursor, even if the precursor of the first device is used up.
  • the temperature of the first device is controlled depending on the amount of precursor in the second device. In this way, a desired level of the precursor can be maintained or adjusted in the second device.
  • the temperature of the second device is controlled independently of the temperature of the first device. In particular, depending on the amount of the precursor in the second device and / or dependent on the volume flow of
  • the described method can, for example, for the
  • the described bubbler has the advantage that a high volume flow of the carrier gas can be provided constantly with a precursor, in particular with a constant saturation of the precursor. This is achieved in particular in that at least one in the liquid precursor
  • Carrier gas in the precursor to the effect that the carrier gas forms a larger surface area and / or must perform a longer path, that is, a longer time in contact with the precursor.
  • the deflection element is designed in the form of a plate with openings. The openings can
  • the deflection element may be designed in the form of a sieve.
  • Openings support the formation of small bubbles of the carrier gas in the liquid precursor. This will be the
  • the deflection element is formed in such a way that the path of the carrier gas in the
  • Precursor is increased. This is achieved, for example, in that the deflection element is designed in the form of a plate with slots.
  • the plate can be
  • Transverse movement in particular forced to a circular and / or spiral flow path.
  • baffles are stacked
  • Bubbler has the advantages explained by the method.
  • a simple and inexpensive construction of a bubbler with a safe temperature control is achieved in that the bubbler has a cooling sleeve, which on the
  • Coolant can be adjusted.
  • control of the temperature of the bubbler by a simple control of the Cooling current can be adjusted.
  • a closed coolant flow can be used, so that no coolant can evaporate.
  • FIG. 1 shows a schematic representation of a system with two devices for enriching a carrier gas with a precursor
  • FIG. 2 shows a bubbler with a cooling collar
  • FIG. 4 shows a schematic plan view of the first deflecting element
  • Figure 5 is a schematic plan view of a deflecting element
  • Figure 6 shows a schematic side view of the deflector of Figure 5 shows.
  • Figure 1 shows a schematic representation of a
  • argon or Helium can be provided from a source 1 with a predetermined pressure.
  • the source 1 is connected to a supply line
  • the supply line 2 is connected via a first valve
  • the first inlet valve 4 connects the supply line 2 with a
  • Inlet pipe 5 that opens into a space 6 of a vessel 29.
  • the inlet pipe 5 ends just above a floor 7 of the room 6.
  • a drain pipe 8 is guided in the space 6, wherein the drain pipe 8 ends just below a ceiling wall 9.
  • the precursor 10 may be present, for example, in solid form or in liquid form.
  • an organometallic compound can be used as precursor 10.
  • the drain pipe 8 is connected via a first outlet valve 11 to a connecting line 12.
  • the connecting line 12 has a second and a third valve 13, 14.
  • the second and third valves 13, 14 are connected in series one behind the other. After the third valve 14 is the
  • the second inlet valve 51 connects the connecting line 12 with a second inlet pipe 15.
  • the second inlet pipe 15 is guided in a second space 16 of a second vessel 32.
  • the second inlet pipe 15 terminates with an outlet opening 17 near a second floor 18 of the second space 16.
  • a second outlet pipe 19 is led out of the second space 16, wherein a drain opening 20 is arranged just below a second ceiling wall 21 of the second space 16.
  • the second discharge pipe 19 is connected via a second outlet valve 22 with a discharge line 23
  • a fourth valve 24 is provided in the derivative 23 .
  • the discharge line 23 opens into a process chamber 25.
  • the same type of precursor as in the first space 6 is provided in the second space 16.
  • the precursor 10 in the form of a liquid precursor be provided.
  • the liquid precursor has a filling level which is arranged between the outlet opening 17 of the second inlet tube 15 and the outlet opening 20 of the second outlet tube 19.
  • the first space 6 has a tempering device 26. With the aid of the tempering device 26, the temperature in the space 6 and thus the temperature of the precursor 10
  • Tempering device 26 is connected via a control line 27 to a control unit 28 in connection.
  • the controller 28 is connected to a data memory 74.
  • the space 6 is delimited by the sealed vessel 29, wherein 5 carrier gas is supplied via the inlet pipe and discharged via the drain pipe 8.
  • the vessel 29 is arranged on a balance 30 in the illustrated embodiment.
  • the balance 30 is connected via a signal line 31 to the controller 28 in connection.
  • the second space 16 is formed by the second sealed vessel 32, wherein via the second inlet pipe 15 carrier gas is discharged to and via the second drain pipe.
  • the second vessel 32 has a second tempering device 33 to adjust the temperature of the second vessel.
  • the second tempering device 33 is connected to the control unit 28 via a second control line 34.
  • the second vessel 32 is arranged on a second scale 35.
  • the second scale 35 is connected via a second signal line 36 with the
  • Temperature sensor 37 may be provided on or in the second vessel 32.
  • the second temperature sensor 37 is connected to the control unit 28 via a third signal line 38.
  • the vessel 29 may have a first temperature sensor 39, which is connected via a fourth signal line 40 to the control unit 28.
  • the control unit 28 has further inputs / outputs 41 via which signals from further sensors are detected and / or control signals are delivered to the valves.
  • a bypass line 42 with a fifth valve 43 is arranged in front of the first valve 3.
  • the bypass line 42 is guided to the connecting line 12 in the flow direction after the second valve 13 and before the third valve 14.
  • a second bypass line 44 with a first and a second switching valve 45, 46 is provided, which the supply line 2 to the connecting line 12 respectively
  • Exhaust valve 11 connects. Furthermore, a third
  • Bridging line 47 is provided, which has a sixth valve 48.
  • the third bypass line 47 connects the supply line 12 in the flow direction before the third valve 14 with the discharge line 23 to the fourth valve 24th
  • a fourth bypass line 49 is provided, which has a third switching valve 50, wherein the fourth
  • the exhaust and intake valves 4, 11, 51,52 are also designed as switching valves, wherein a
  • Switching valve is manually switched.
  • the other valves 3, 13, 14, 24, 43, 48 are each formed as pneumatic valves, which are controlled by the control unit 28, that is, opened or closed.
  • Precursors be supplied.
  • corresponding programs are stored in the data memory 74 for the control unit 28.
  • the enrichment of the carrier gas flowing through the first space 6 and the second space 16 depends on the Flow rate of the carrier gas and the temperature of the precursor 10 from.
  • the carrier gas is supplied from the source 1 at a predetermined pressure.
  • the first, second, third and fourth valves 3, 13, 14, 24 are opened accordingly.
  • the intake and exhaust valves 4, 11, 51, 52 are also open.
  • the switching valves 45, 46, 50 of the second and fourth bypass lines 44, 49 are closed in normal operation.
  • the fifth valve 43 and the sixth valve 48 are closed during normal operation.
  • the temperature of the precursor 10 in the first and a second space 6, 16 is detected by the temperature sensors 37, 39. Depending on the given volume flow and the
  • Control unit 28 is set. In addition, the saturation of the
  • Carrier gas in the second space 16 from the level of the precursor are programs and tables in the
  • Data memory 29 stored. To maintain a desired level of the precursor 10 in the second space 16, the temperature of the precursor 10 in the first space 6 is set higher than for the saturation of
  • Carrier gas is required.
  • more precursor is transported from the space 6 via the carrier gas and the connecting line 12 into the second space 16, as is guided by the carrier gas via the second discharge line 23 from the second space 16 to the process chamber 25.
  • the level of the precursor in the second space 16 is increased.
  • the weight of the second vessel 32 is detected by means of the second scale 35 and reported to the control unit 28.
  • the data memory 74 tables are stored, which depend on the detected weight of the second vessel 32 calculate a level.
  • the weight of the first vessel 29 is detected by means of the balance 30 and reported to the control unit 28.
  • the control unit 28 determines the fill level of the precursor 10 in the space 6.
  • other measurement methods can be used instead of the scales 30, 35 to determine the fill level or the quantity of the precursor 10 in the first and / or. or in the second room 6, 16.
  • the first and second vessels each provide a device for enriching a
  • Carrier gas with a precursor in the form of a bubbler Carrier gas with a precursor in the form of a bubbler.
  • organometallic compounds such as e.g. Trimethylgallium, trimethylaluminum, trimethylindium, dimethylhydrazines, etc. used.
  • Trimethylgallium, trimethylaluminum, trimethylindium, dimethylhydrazines, etc. used for the preparation of compound semiconductors.
  • the advantage of these compounds is a moderate vapor pressure at room temperature, so they close
  • Precursors so-called bubblers there which correspond to the construction principle of a gas washing bottle.
  • the metal ⁇ organic compounds are transported in a saturated vapor over a liquid organometallic compound or a solid organometallic compound by the introduction of a carrier gas, such as hydrogen, nitrogen or argon, to the process chamber 25.
  • a carrier gas such as hydrogen, nitrogen or argon
  • Concentration of the precursor in the carrier gas is one
  • the vessels 29, 32 with the tempering 26, 33 as accurately as possible kept at the desired temperature in order to achieve a defined constant vapor pressure of the organometallic precursor.
  • aluminum for example trimethylaluminum
  • gallium trymethylgallium for the deposition of gallium trymethylgallium
  • indium trimethylindium for the deposition of germanium Isobotylgermanium and used for the deposition of arsenic arsine.
  • FIG. 2 shows a schematic representation of the vessel 29, which represents a device for enriching a carrier gas with a precursor and has been broken down according to FIG.
  • the vessel 29 has a cooling sleeve 53 as tempering device 26, which has a cooling line 55 for guiding a cooling medium.
  • the cooling sleeve 53 is connected, for example, with a closed cooling water circuit, whereby a temperature of the vessel 29 and thus of the precursor 10 in the vessel 29 to an accuracy of + - 0.5 degrees is possible.
  • the cooling sleeve is connected via a controllable valve to the closed cooling water circuit. Depending on the chosen embodiment, only a part of the
  • the cooling sleeve 53 consists of cooling pipes 55, which are arranged transversely to the longitudinal extent of the vessel 29 and thermally conductive contact surfaces 54 which are perpendicular to the cooling tubes 55 and rest directly on the outside of the vessel 29.
  • the cooling lines 55 give the heat / cold to the contact surfaces 54.
  • Cooling sleeve 53 is a direct proportional cooling of the vessel 29 possible.
  • FIG. 3 shows in a schematic cross section a
  • the second vessel 32 has a substantially cylindrical outer shape and a cylindrical second space 16.
  • the second space 16 is bounded by a first housing wall 57.
  • the first housing wall 57 is formed in the form of a cylinder wall with bottom 59 and includes second cooling lines 58 for tempering the first housing wall 57.
  • the second cooling line 58 is introduced both in the side walls 60 and in the bottom 59 of the first housing wall 57.
  • the first housing wall 57 is of a second housing wall 61st surround.
  • the second housing wall 61 is likewise cylindrical and has a second bottom 62.
  • a sleeve-shaped cavity 63 is formed with a bottom space. The cavity 63 is sealed under vacuum. so that in the cavity 63, a vacuum for thermal insulation is present.
  • the first housing wall 57 is of a cover 64
  • the second inlet pipe 15 ends just above the bottom 59.
  • a first deflecting element 65 is arranged above an outlet opening of the second inlet pipe 15.
  • the first deflector 65 is in the illustrated embodiment as
  • the first deflection element 65 has holes, for example in the form of circular surfaces. Depending on the chosen embodiment, the first deflector 65 may be in the form of a screen with holes,
  • the task of the first deflecting element 65 is to divide the carrier gas supplied via the second feed pipe 15 into smaller gas bubbles. This will be the surface of the first deflecting element 65
  • a precursor 10 which is liquid and fills the second space 16 up to a desired level 66.
  • the first deflection element 65 can also be dispensed with.
  • Above the first deflecting element 65 at least one further deflecting element 67, 68, 69 is arranged.
  • Embodiment three further deflecting elements 67, 68, 69 are provided.
  • the three other deflecting elements are
  • the further deflection elements 67, 68, 69 have a shape with which the flow of the carrier gas is deflected laterally, in particular is deflected to a helical flow direction.
  • the deflecting elements 67, 68, 69 may be formed, for example, in the form of plates with slots.
  • the further deflection elements may be formed in the form of plates, which are divided into circle segments
  • FIG. 4 shows, in a schematic plan view, the first deflection element 65 with a large number of circular holes 77 which are distributed uniformly over the deflection element 65, for example.
  • FIG. 5 shows a schematic view of the first further deflecting element 67 from above. The first more
  • Deflection element 67 has a plurality of circular segments 70. In addition, a central opening 71 for the passage of the second inlet pipe 15 is provided.
  • FIG. 6 shows, in a schematic side view, a plane 72 of the first further deflecting element 67 and two
  • the second and third further deflecting elements 68, 69 may be formed corresponding to the first further deflecting element 67. Furthermore, the second and third more
  • Bending element also have other shapes to increase the time and / or the path of the rising carrier gas.
  • Above the third further deflector 69 and below the level 66 of the precursor can be an additional
  • Deflection element 73 may be provided. The extra
  • Deflection element 73 has substantially the same shape as first deflection element 65. Depending on the chosen embodiment, the shape and / or size of the
  • Openings opposite to the first deflector 65 may be formed differently.
  • the second housing 32 has a connection for supplying cooling fluid to the second cooling line 58.
  • a closed cooling water circuit for the second cooling line 58 may be provided, wherein the cooling water, for example, by an externally arranged
  • Peltier cooler can be controlled exactly.
  • the temperature control can be in the range of + - 0.1 degrees Celsius.
  • Deflection elements 65, 66, 67, 68, 69, 73 constitute baffles or diffuser plates which cover both the surface of the
  • a blind hole 76 may be provided to the second temperature sensor 32 in the second interior 16
  • a desired level of the second housing 29 with precursor ie the second bubbler to 75% of the volume of the second space 16 is kept constant.
  • the cavity 63 can be dispensed with the cavity 63 as a vacuum for insulation and a material insulation can be provided.
  • the second bubbler that is, the housing 32 without the first bubbler, that is, the first housing 29 for
  • Provision of enriched carrier gas can be used.
  • the source of carrier gas is connected directly to the feed line 12 of the second device ( Figure 1).

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)

Abstract

L'invention concerne un procédé d'alimentation d'un processus en gaz vecteur enrichi, un premier dispositif et un deuxième dispositif étant prévus, le premier dispositif présentant un précurseur et étant conçu pour mettre un gaz vecteur en contact avec le précurseur et l'enrichir du précurseur, le deuxième dispositif présentant un précurseur et étant conçu pour mettre un gaz vecteur en contact avec le précurseur et l'enrichir du précurseur, le premier dispositif assurant l'alimentation du deuxième dispositif en un gaz vecteur enrichi, le deuxième dispositif fournissant le gaz vecteur enrichi au processus, une température du premier dispositif étant commandée en fonction de la quantité de précurseur présente dans le deuxième dispositif. L'invention concerne également un dispositif d'enrichissement d'un gaz vecteur avec un précurseur et un dispositif de commande permettant la commande du procédé.
PCT/EP2014/056331 2013-04-10 2014-03-28 Procédé d'alimentation d'un processus en gaz vecteur enrichi WO2014166766A2 (fr)

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Application Number Priority Date Filing Date Title
US14/772,679 US9914997B2 (en) 2013-04-10 2014-03-28 Method for supplying a process with an enriched carrier gas

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DE102013103603.1 2013-04-10
DE102013103603.1A DE102013103603A1 (de) 2013-04-10 2013-04-10 Verfahren zum Versorgen eines Prozesses mit einem angereicherten Trägergas

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WO2014166766A2 true WO2014166766A2 (fr) 2014-10-16
WO2014166766A3 WO2014166766A3 (fr) 2014-12-18

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US11834740B2 (en) * 2020-11-10 2023-12-05 Applied Materials, Inc. Apparatus, system, and method for generating gas for use in a process chamber
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US9914997B2 (en) 2018-03-13
US20160017489A1 (en) 2016-01-21
DE102013103603A1 (de) 2014-10-16
WO2014166766A3 (fr) 2014-12-18

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