WO2014150242A1 - Appareil de fabrication pour le dépôt d'une matière et un joint en vue d'une utilisation dans celui-ci - Google Patents

Appareil de fabrication pour le dépôt d'une matière et un joint en vue d'une utilisation dans celui-ci Download PDF

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Publication number
WO2014150242A1
WO2014150242A1 PCT/US2014/022696 US2014022696W WO2014150242A1 WO 2014150242 A1 WO2014150242 A1 WO 2014150242A1 US 2014022696 W US2014022696 W US 2014022696W WO 2014150242 A1 WO2014150242 A1 WO 2014150242A1
Authority
WO
WIPO (PCT)
Prior art keywords
gasket
body portion
manufacturing apparatus
set forth
base plate
Prior art date
Application number
PCT/US2014/022696
Other languages
English (en)
Inventor
Matthew DEEG
David C. HILLABRAND
Keith Mccoy
Andrew IDDESON
Paul Michael ZOTT
Original Assignee
Hemlock Semiconductor Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hemlock Semiconductor Corporation filed Critical Hemlock Semiconductor Corporation
Publication of WO2014150242A1 publication Critical patent/WO2014150242A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4418—Methods for making free-standing articles

Definitions

  • the present invention relates to a manufacturing apparatus for depositing a material on a carrier body. More specifically, the present invention relates to a gasket used to seal a chamber of the manufacturing apparatus.
  • Manufacturing apparatuses for depositing a material on a carrier body are known in the art.
  • silicon may be deposited on the carrier body to produce polycrystalline silicon.
  • a conventional manufacturing apparatus includes a housing defining a chamber. The carrier body is placed in the chamber before the conventional manufacturing apparatus is operated. During operation of the conventional manufacturing apparatus, the carrier body is heated in the presence of a deposition composition, which contains the material. The deposition composition is decomposed, which results in the deposition of the material on the carrier body.
  • the conventional manufacturing apparatus includes a gasket for sealing the chamber. Sealing the chamber maintains an operating pressure of the chamber. Additionally, sealing the chamber also prevents the deposition composition from escaping the chamber.
  • the gasket is also heated, which degrades the gasket over time. As the gasket degrades, the gasket fails to seal the chamber. Furthermore, as the gasket is heated, the gasket may release impurities into the chamber, which can contaminate the material deposited on the carrier body. Therefore, the gasket must be capable of maintaining the seal at high temperatures while limiting degrading of the gasket and limiting contamination of the material deposited on the carrier body.
  • a gasket seals a chamber of a manufacturing apparatus.
  • the manufacturing apparatus deposits a material on a carrier body.
  • the manufacturing apparatus includes a housing having a jar, which defines the chamber, and a base plate for coupling with the jar.
  • An electrode is disposed through the housing with the electrode at least partially disposed within the chamber.
  • An inlet is defined by the housing for introducing a deposition composition, which comprises the material or a precursor thereof, into the chamber.
  • the gasket is disposable between the base plate and either the jar or the electrode for preventing the deposition composition from escaping the chamber.
  • the gasket comprises a body portion with a hollow interior. The hollow interior allows the gasket to be compressed to seal the chamber and allows the gasket to withstand higher operating temperatures without degrading.
  • Figure 1 is a cross-sectional view of a manufacturing apparatus for depositing a material on a carrier body including an electrode;
  • Figure 2 is an enlarged cross-sectional view of a portion of the manufacturing apparatus shown a gasket disposed between ajar and a base plate of a housing;
  • Figure 3 is a cross-sectional view of the manufacturing apparatus during operation with a deposition composition present within a chamber of the manufacturing apparatus;
  • Figure 4 is an enlarges cross-section of a portion of the manufacturing apparatus showing the gasket disposed between the housing and an electrode;
  • Figure 5 is an enlarged cross-sectional view of a portion of the manufacturing apparatus showing the gasket between a flange of the jar and the base plate;
  • Figure 6 is an enlarged cross-sectional view of a portion of the manufacturing apparatus showing the gasket disposed within a channel defined by the base plate;
  • Figure 7 is an enlarged cross-sectional view of a portion of the manufacturing apparatus showing the gasket disposed between an insulating sleeve disposed around the electrode and the base plate;
  • Figure 8 is a perspective view of a portion of the gasket
  • Figure 9 is an enlarged cross-sectional view of a portion of the manufacturing apparatus showing the gasket between the flange of the jar and the base plate with the flange having a C-shaped configuration and with the gasket defining a channel facing an exterior of the manufacturing apparatus;
  • Figure 10 is an enlarged cross-sectional view of a portion of the manufacturing apparatus showing the gasket between the flange of the jar and the base plate with the flange having a V-shaped configuration;
  • Figure 11 is an enlarged cross-sectional view of a portion of the manufacturing apparatus showing the gasket between the flange of the jar and the base plate with the flange having a W-shaped configuration;
  • Figure 12 is an enlarged cross-sectional view of a portion of the manufacturing apparatus showing the gasket between the flange of the jar and the base plate with the flange having a C-shaped configuration and with the channel of the gasket facing the chamber;
  • Figure 13 is an enlarged cross-sectional view of a portion of the manufacturing apparatus showing the gasket between the jar and the base plate with the gasket including a biasing element;
  • Figure 14 is an enlarged cross-sectional view of a portion of the manufacturing apparatus showing the gasket between the jar and the base plate with the gasket including a spring as the biasing element;
  • Figure 15 is a perspective view of a portion of the gasket having the spring as the biasing element
  • Figure 16A is an enlarged cross-sectional view of a portion of the manufacturing apparatus showing the gasket having the C-shaped configuration and including the biasing element;
  • Figure 16B is an enlarged cross-sectional view of a portion of the manufacturing apparatus showing the gasket having the V-shaped configuration and including the biasing element
  • Figure 16C is an enlarged cross-sectional view of a portion of the manufacturing apparatus showing the gasket having the W-shaped configuration and including the biasing element
  • Figure 17 is a cross-sectional view of the manufacturing apparatus with a first gasket disposed between the jar and the base plate and a second gasket disposed between the electrode and the housing.
  • a manufacturing apparatus 20 for deposition of a material 22 on a carrier body 24 is shown.
  • the material 22 is deposited on a carrier body 24.
  • the manufacturing apparatus 20 may be a chemical vapor deposition reactor, such as a Siemens type chemical vapor deposition reactor, for depositing silicon on the carrier body 24 to produce high purity polycrystalline silicon.
  • the carrier body 24 may have a substantially U-shaped configuration, as shown in Figure 1.
  • the carrier body 24 may have configurations other than the U-shaped configuration.
  • the carrier body 24 is typically a silicon slim rod comprising high purity silicon. The silicon is deposited on the silicon slim rod for producing high purity polycrystalline silicon.
  • the manufacturing apparatus 20 comprises a housing 26.
  • the housing 26 includes a jar 28 and a base plate 30 for coupling to the jar 28 to form the housing 26.
  • the jar 28 of the housing 26 has at least one wall 32 with the wall 32 typically presenting a cylindrical configuration of the housing 26.
  • the jar 28 of the housing 26 may have configurations other than cylindrical, such as a cubed configuration.
  • the jar 28 defines a chamber 34. More specifically, the wall 32 of the jar 28 of the housing 26 has an interior surface 36, such that the interior surface 36 of the jar 28 defines the chamber 34.
  • the jar 28 has an end 38 that is open for allowing access to the chamber
  • the base plate 30 is coupled to the end 38 of the jar 28 that is open for covering the end 38. When coupled to the jar 28, the base plate 30 partially seals the chamber
  • a gasket 40 may be disposed between the jar 28 and the base plate 30 for sealing the chamber 34 at the wall 32 of the jar 28.
  • the gasket 40 is described in greater detail below.
  • the housing 26 may include a flange 42, which extends from the wall 32 of the housing 26. More specifically, the flange 42 extends transversely from the wall 32 of the housing 26. Typically, the flange 42 is parallel with the base plate 30 when the base plate 30 is coupled to the housing 26. Typically, both the flange 42 and the base plate 30 define a hole 44 for receiving a fastener 46, such as a bolt, to secure the jar 28 to the base plate 30. Said differently, the fastener 46 prevents the jar 28 and the base plate 30 from moving relative to each other. It is to be appreciated that the hole 44 in the flange 42 and the base plate 30 may be threaded for receiving threads of the fastener 46. As shown in Figure 2, it is to be appreciated that a spacer 47, such as a washer, can be disposed between the jar 28 and the base plate 30 to prevent over compression of the gasket 40.
  • a spacer 47 such as a washer
  • the base plate 30 may define a channel 48.
  • the channel 48 is defined about a periphery of the base plate 30.
  • the flange 42 of the housing 26 may have a finger 50 extending from the flange 42 for engaging the channel 48 of the base plate 30.
  • the engagement of the finger 50 of the flange 42 with the channel 48 of the base plate 30 ensures that the base plate 30 and the housing 26 are properly aligned when coupling the housing 26 to the base plate 30.
  • the engagement of the finger 50 of the flange 42 with the channel 48 of the base plate 30 also prevents a blowout of the wall 32 of the jar 28 during operation of the manufacturing apparatus 20.
  • engagement of the finger 50 of the flange 42 with the channel 48 of the base plate 30 may act as the spacer 47 for preventing the gasket 40 from being over compressed.
  • the housing 26 defines an inlet 52 for introducing a deposition composition 54, which comprises the material 22 to be deposited or a precursor thereof, into the chamber 34.
  • the housing 26 may define an outlet
  • the inlet 52 and/or the outlet 56 may be defined by either the jar 28 or the base plate 30 of the housing 26.
  • an inlet pipe 58 is connected to the inlet 52 for delivering the deposition composition 54 to the chamber 34 and an exhaust pipe 60 is connected to the outlet 56 for removing the deposition composition 54, or a reaction byproduct thereof, from the chamber 34.
  • the manufacturing apparatus 20 includes an electrode 62 disposed through the housing 26.
  • the electrode 62 is at least partially disposed within the chamber 34.
  • the electrode 62 is typically disposed through the base plate 30 with a portion of the electrode 62 supporting the carrier body 24 within the chamber 34.
  • the electrode 62 may be disposed through the jar 28 of the housing.
  • the electrode 62 has a shaft 64 and a head 66 disposed on the shaft 64.
  • the head 66 is disposed within the chamber 34 for supporting the carrier body 24.
  • the mechanical interaction between the electrode 62 and the housing 26 is not sufficient to completely seal the chamber 34.
  • the gasket 40 may be disposed between the electrode 62 and the housing 26 for sealing the chamber 34 at the electrode 62. The gasket 40 is described in greater detail below.
  • the electrode 62 comprises an electrically conductive material such as copper, silver, nickel, Inconel, gold, and combinations thereof.
  • the electrode 62 is heated within the chamber 34 by passing an electric current through the electrode 62.
  • the carrier body 24 is heated to a deposition temperature by a process known as Joule heating.
  • the deposition temperature of the carrier body 24 within the chamber 34 is of from about 800 to about 1,250, more typically of from about 900 to about 1,150, and even more typically of from about 950 to about 1,100 degrees centigrade.
  • an operating temperature of the chamber 34 is of from about room temperature to about 400, more typically of from about 150 to about 350, and even more typically of from about 150 to about 350 degrees centigrade. It is to be appreciated that the operation temperature is not constant during operation of the manufacturing apparatus 20 and the operating temperature generally increases during operation.
  • Heating the carrier body 24 to the deposition temperature generally facilitates thermal decomposition of the deposition composition 54.
  • the deposition composition 54 comprises the material 22 to be deposited on the carrier body 24 or a precursor thereof. Therefore, the thermal decomposition of the deposition composition 54 results in the material 22 being deposited on the heated carrier body 24.
  • the deposition composition 54 may comprise a halosilane, such as a chlorosilane or a bromosilane.
  • the deposition composition 54 may comprise other precursors, especially silicon containing molecules such as silane, silicon tetrachloride, tribromosilane, and trichlorosilane.
  • the manufacturing apparatus 20 can be used to deposit materials other than silicon on the carrier body 24.
  • an impurity or impurities are defined as an element or a compound the presence of which is undesirable in the material 22 deposited.
  • the impurities of concern typically include aluminum, arsenic, boron, phosphorous, iron, nickel, copper, chromium, and combinations thereof.
  • limiting impurities present in the material 22 deposited on the carrier body 24 results in a high purity of the material 22.
  • High purity as the term is used herein, means that the material 22 has an impurity content of less than or equal to 1 parts per million atomic.
  • the material 22 to be deposited is silicon
  • additional distinctions between deposited silicons which can be made based on sequentially lower impurity contents. While the above threshold for characterizing the material 22 as having a high purity provides an upper limit for the impurity content, deposited silicons can still be characterized as high purity with substantially lower impurity content than the threshold set forth above.
  • the manufacturing apparatus 20 includes the gasket 40.
  • the gasket 40 may be referred to as a seal.
  • the gasket 40 may be disposed between the jar 28 and the base plate 30 for sealing the chamber 34 at the wall 32 of the jar 28, as shown in Figure 2.
  • the gasket 40 may be disposed between the electrode 62 and the housing 26 for sealing the chamber 34 at the electrode 62, as shown in Figure 4. Sealing the chamber 34 prevents the deposition composition 54 from escaping the chamber 34.
  • the deposition composition 54 comprises trichlorosilane
  • the deposition composition 54 is a gas and the gasket 40 prevents the trichlorosilane from escaping the chamber 34.
  • the gasket 40 When the gasket 40 is disposed between the jar 28 and the base plate 30, the gasket 40 may be disposed between the wall 32 of the jar 28 and the base plate 30, as shown in Figure 2. In such an embodiment, the wall 32 of the jar 28 contacts the gasket 40 to compress the gasket 40 for sealing between the housing 26 and the base plate 30. Additionally, when the gasket 40 and the flange 42 are present, the gasket 40 may be disposed between the flange 42 and the base plate 30 to seal the perimeter of the base plate 30 about the jar 28, as shown in Figure 5. In such an embodiment, the flange 42 contacts the gasket 40 to compress the gasket 40 for sealing between the housing 26 and the base plate 30.
  • the gasket 40 may be disposed within the channel 48 of the base plate 30 with the finger 50 contacting the gasket 40 to compress the gasket 40 for sealing between the jar 28 and the base plate 30, as shown in Figure 6.
  • the gasket 40 when the gasket 40 is disposed between the electrode 62 and the housing 26 and the electrode 62 includes the head 66 and the shaft 64, the gasket 40 may be disposed about the shaft 64 between the head 66 and the housing 26 with the head 66 compressing the gasket 40 for sealing the chamber 34 at the electrode 62.
  • an insulating sleeve 68 may be disposed about the electrode 62 for preventing the electric current from passing from the electrode 62 into the housing 26. When the insulating sleeve 68 is present, the gasket 40 may be compressed between the insulating sleeve 68 and the housing 26 for sealing the chamber 34.
  • pressure within the chamber 34 may increase to an operating pressure.
  • the gasket 40 is capable of sealing between the housing 26 and the base plate 30.
  • sealing the chamber 34 with the gasket 40 assists with maintaining the operating pressure within the chamber 34.
  • the operating pressure is less than of from about 15, more typically of from about 2 to about 8, and even more typically of from about 3 to about 7 atmospheres.
  • the engagement of the finger 50 with the channel 48 prevents a side blowout of the reactor chamber 34.
  • the engagement of the finger 50 and the channel 48 prevents the gasket 40 from rupturing as pressure within the chamber 34 increases.
  • the engagement of the finger 50 with the channel 48 allows the gasket 40 to be thinner relative to conventional gaskets.
  • the gasket 40 is in atmospheric communication with the chamber 34. As such, the gasket 40 is heated as the temperature within the chamber 34 approaches the operating temperature. Additionally, the gasket 40 is in atmospheric communication with the carrier body 24 within the chamber 34 and is therefore in atmospheric communication with the material 22 as it is deposited on the carrier body 24. Therefore, care must be taken to ensure that the gasket 40 does not contribute impurities into the chamber 34, especially when the gasket 40 is heated. As such, the gasket 40 has a thermal stability suitable to prevent decomposition, which can result in an introduction of impurities into the chamber 34, when the gasket 40 is exposed to the operating temperature within the chamber 34. Therefore, due to the thermal stability of the gasket 40, the gasket 40 minimally contributes impurities, if at all, into the chamber 34 during operation of the manufacturing apparatus 20.
  • the gasket 40 contributes an amount of impurities to the material 22 deposited on the carrier body 24 that is less than 100 parts per billion atomic. Therefore, the gasket 40 can be used within the manufacturing apparatus 20, which deposits the material 22 having the high purity.
  • the material 22 deposited is silicon for producing polycrystalline silicon
  • the polycrystalline silicon is produced with the high purity because possible contamination by the gasket 40 has been limited or even eliminated.
  • the limitation or prevention of impurities within the gasket 40 from contaminating the material 22 deposited on the carrier body 24 allows the material 22 deposited on the carrier body 24, especially polycrystalline silicon, to meet and/or exceed the high purity threshold described above.
  • the gasket 40 comprises a body portion 70 with a hollow interior 72.
  • the body portion 70 of the gasket 40 is compressed between the jar 28 and the base plate 30 or the electrode 62 and the housing 26 to seal the chamber 34.
  • the gasket 40 typically has a ring shaped configuration for sealing the perimeter of the base plate 30 at the jar 28 or for sealing about the electrode 62.
  • the body portion 70 of the gasket 40 is ring shaped.
  • the gasket 40 has a diameter. The diameter of the gasket 40 can vary to accommodate various sizes of the base plate 30 or various sizes of the electrode 62.
  • the diameter of the gasket 40 can be adjusted to a diameter of the wall 32 of the jar 28 to ensure the gasket 40 is properly seated between the wall 32 of the jar 28 and the base plate 30. Additionally, when the gasket 40 is disposed between the electrode 62 and the base plate 30, the diameter of the gasket 40 can be adjusted to be larger than a diameter of the shaft 64 of the electrode 62 and smaller than a diameter of the head 66 of the electrode 62 to ensure the gasket 40 is properly seated between the head 66 of the electrode 62 and the base plate 30.
  • the body portion 70 of the gasket 40 may define a channel 74 in communication with the hollow interior 72 of the body portion 70 such that the body portion 70 has a C-shaped configuration in cross-section.
  • the channel 74 interrupts a perimeter of the body portion 70. Said differently, the perimeter of the body portion 70 of the gasket 40 is not complete because the body portion 70 defines the channel 74.
  • the body portion 70 may have a V-shaped configuration in cross-section, as shown in Figure 10.
  • the body portion 70 may define more than one channel 74 in communication with the hollow interior 72 such that the body portion 70 has a W-shaped configuration in cross-section, as shown in Figure 11.
  • the gasket 40 may be disposed between the jar 28 and the base plate 30 with the channel 74 facing the chamber 34 of the manufacturing apparatus 20, as shown in Figure 12.
  • the gasket 40 may be disposed between the jar 28 and the base plate 30 with the channel 74 facing the exterior of the manufacturing apparatus 20, as shown in Figure 9.
  • the body portion 70 of the gasket 40 may comprise a nickel containing material.
  • the nickel containing material is selected from the group of nickel 200, nickel 400, alloy C, inconel X718, inconel X750, waspalloy, aluminum, stainless steel, and combinations thereof.
  • the body portion 70 of the gasket 40 comprises nickel 200.
  • the nickel containing material of the body portion 70 of the gasket 40 may be plated with a plating material.
  • the plating material is selected from the group of silver, copper, gold, polytetrafluoroethylene, and combinations thereof.
  • the gasket 40 may include a biasing element 76 disposed within the hollow interior of the body portion 70.
  • the biasing element 76 provides compression resistance as the body portion 70 is compressed to seal the chamber 34. More specifically, the biasing element 76 has a sealing force of from about 2000 to about 4000 PSI.
  • the biasing element 76 may completely fill the hollow interior of the body portion 70.
  • the biasing element 76 may fill only a portion of the hollow interior.
  • the biasing element 76 may be a spring, as shown in Figures 14 and 15.
  • the biasing element 76 may be a coiled structure disposed within the hollow interior of the body portion 70.
  • the biasing element 76 can be used with any configuration of the gasket 40. For example, when the gasket 40 has the C-shaped configuration, the biasing element 76 may be present, as shown in Figure 16A. Additionally, when the gasket 40 has the V-shaped configuration, the biasing element 76 may be present, as shown in Figure 16B. Furthermore, when the gasket 40 has the W- shaped configuration, several of the biasing element 76 may be present, as shown in Figure 16C.
  • the manufacturing apparatus 20 may include a plurality of gaskets.
  • a first gasket 40A may be disposed between the jar
  • first gasket 40A can have any suitable configuration for sealing between the electrode 62 and the housing
  • the body portion 70 of both the first and second gaskets 40A, 40B comprise inconel X718 and the plating material comprises silver. It is to be appreciated that the first and second gaskets 40A, 40B may not have the same configuration. It is also to be appreciated that the manufacturing apparatus 20 may include multiple electrodes 62 for supporting multiple carrier bodies 24 or multiple ends of the carrier body 24 in the case of the U-shaped carrier body 24.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Un joint étanchéifie une chambre d'un appareil de fabrication. L'appareil de fabrication dépose une matière sur un corps support. L'appareil de fabrication comprend un boîtier ayant une cuve, qui définit la chambre, et une plaque de base pour un couplage avec la cuve. Une électrode est disposée à travers le boîtier avec l'électrode étant au moins partiellement disposée dans la chambre. Un orifice d'entrée est défini par le boîtier pour introduire une composition de dépôt, qui comprend la matière ou un précurseur de celle-ci, dans la chambre. Le joint est jetable entre la plaque de base et soit la cuve soit l'électrode pour empêcher la composition de dépôt de s'échapper de la chambre. Le joint comprend une partie du corps ayant un intérieur creux.
PCT/US2014/022696 2013-03-15 2014-03-10 Appareil de fabrication pour le dépôt d'une matière et un joint en vue d'une utilisation dans celui-ci WO2014150242A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201361792043P 2013-03-15 2013-03-15
US61/792,043 2013-03-15
US201361823222P 2013-05-14 2013-05-14
US61/823,222 2013-05-14

Publications (1)

Publication Number Publication Date
WO2014150242A1 true WO2014150242A1 (fr) 2014-09-25

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PCT/US2014/022696 WO2014150242A1 (fr) 2013-03-15 2014-03-10 Appareil de fabrication pour le dépôt d'une matière et un joint en vue d'une utilisation dans celui-ci

Country Status (2)

Country Link
TW (1) TW201447034A (fr)
WO (1) WO2014150242A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020123069A1 (fr) * 2018-12-11 2020-06-18 Applied Materials, Inc. Mandrin électrostatique cryogénique
WO2021055134A1 (fr) * 2019-09-16 2021-03-25 Applied Materials, Inc. Mandrin électrostatique cryogénique
US11437261B2 (en) 2018-12-11 2022-09-06 Applied Materials, Inc. Cryogenic electrostatic chuck

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5415729A (en) * 1992-02-12 1995-05-16 Balzers Aktiengesellschaft Vacuum treatment apparatus
US20100212592A1 (en) * 2007-06-19 2010-08-26 Tokyo Electron Limited Vacuum processing apparatus
WO2013012422A1 (fr) * 2011-07-20 2013-01-24 Hemlock Semiconductor Corporation Dispositif de fabrication pour déposer une matière sur un corps de support

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5415729A (en) * 1992-02-12 1995-05-16 Balzers Aktiengesellschaft Vacuum treatment apparatus
US20100212592A1 (en) * 2007-06-19 2010-08-26 Tokyo Electron Limited Vacuum processing apparatus
WO2013012422A1 (fr) * 2011-07-20 2013-01-24 Hemlock Semiconductor Corporation Dispositif de fabrication pour déposer une matière sur un corps de support

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020123069A1 (fr) * 2018-12-11 2020-06-18 Applied Materials, Inc. Mandrin électrostatique cryogénique
TWI737059B (zh) * 2018-12-11 2021-08-21 美商應用材料股份有限公司 低溫靜電吸盤
US11437261B2 (en) 2018-12-11 2022-09-06 Applied Materials, Inc. Cryogenic electrostatic chuck
WO2021055134A1 (fr) * 2019-09-16 2021-03-25 Applied Materials, Inc. Mandrin électrostatique cryogénique
US11373893B2 (en) 2019-09-16 2022-06-28 Applied Materials, Inc. Cryogenic electrostatic chuck

Also Published As

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TW201447034A (zh) 2014-12-16

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