WO2014149678A1 - Refroidissement de mandrin de support de substrat pour chambre de dépôt - Google Patents

Refroidissement de mandrin de support de substrat pour chambre de dépôt Download PDF

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Publication number
WO2014149678A1
WO2014149678A1 PCT/US2014/020272 US2014020272W WO2014149678A1 WO 2014149678 A1 WO2014149678 A1 WO 2014149678A1 US 2014020272 W US2014020272 W US 2014020272W WO 2014149678 A1 WO2014149678 A1 WO 2014149678A1
Authority
WO
WIPO (PCT)
Prior art keywords
cooling
substrate support
electrostatic chuck
cooling section
central opening
Prior art date
Application number
PCT/US2014/020272
Other languages
English (en)
Inventor
Brian West
Vijay Parkhe
Robert HIRAHARA
Dan DEYO
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to CN201480003693.8A priority Critical patent/CN105027274B/zh
Priority to KR1020157018333A priority patent/KR20150130264A/ko
Publication of WO2014149678A1 publication Critical patent/WO2014149678A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating

Definitions

  • Embodiments of the present invention generally relate to semiconductor processing.
  • a substrate support for use in a substrate processing chamber may include an electrostatic chuck having a top substrate support surface and a bottom surface, and a cooling ring assembly having a central opening disposed proximate the bottom surface of the electrostatic chuck, the cooling ring assembly including, a cooling section having a top surface thermally coupled to the bottom surface of the electrostatic chuck, the cooling section having a cooling channel formed in a bottom surface of the cooling section, and a cap coupled to a bottom surface of the cooling section and fluidly sealing the cooling channel formed in the cooling section.
  • a cooling ring assembly for cooling a substrate support may include a cooling section having a top surface, a bottom surface having a cooling channel formed in the bottom surface, and a first central opening, and a cap having a second central opening, wherein the cap is coupled to the bottom surface of the cooling section and fluidly seals the cooling channel formed in the cooling section, and wherein the first central opening and second central opening are substantially aligned.
  • a process chamber for processing substrates may include a chamber body having an inner volume, a substrate support disposed in the inner volume, the substrate support including: an electrostatic chuck having a top substrate support surface and a bottom surface; an annular support ring having a central opening coupled to the bottom surface of the electrostatic chuck; an annular retention ring having a central opening disposed within the central opening of the annular support ring; and a cooling ring assembly disposed within the central opening of the annular retention ring and proximate the bottom surface of the electrostatic chuck, the cooling ring assembly including a cooling section having a top surface thermally coupled to the bottom surface of the electrostatic chuck, the cooling section having a cooling channel formed in a bottom surface of the cooling section, and a cap coupled to the bottom surface of the cooling section and fluidly sealing the cooling channel formed in the cooling section.
  • Figure 1 is a process chamber suitable for use with the inventive substrate support chuck in accordance with some embodiments of the present invention
  • Figure 2 is a schematic cross-sectional side view of a substrate in accordance with some embodiments of the present invention.
  • Figure 3 is a schematic cross-sectional bottom view of a cooling ring assembly in accordance with some embodiments of the present invention.
  • Exemplary embodiments consistent with the present invention advantageously provide the ability to process substrates which use lower process temperatures either to maintain certain characteristics of the film being deposited, or to limit thermal damage to films already deposited.
  • embodiments consistent with the present invention advantageously provide a substrate support chuck capable of removing extra heat from substrate during higher energy processes used to deposit thick films in reasonable time span, or to deposit difficult to sputter materials.
  • the process energy can be advantageously increased without raising the wafer temperature, thereby allowing the deposition rate to be increased leading to a reduction in process time and a subsequent increase in chamber productivity.
  • FIG. 1 is a schematic cross-sectional view of plasma processing chamber in accordance with some embodiments of the present invention.
  • the plasma processing chamber is a physical vapor deposition (PVD) processing chamber.
  • PVD physical vapor deposition
  • other types of processing chambers that utilize electrostatic chucks may also be used with the inventive apparatus.
  • the chamber 100 is a vacuum chamber which is suitably adapted to maintain sub-atmospheric pressures within a chamber interior volume 120 during substrate processing.
  • the chamber 100 includes a chamber body 106 covered by a dome 104 which encloses a processing volume 1 19 located in the upper half of chamber interior volume 120.
  • the chamber 100 may also include one or more shields 105 circumscribing various chamber components to prevent unwanted reaction between such components and ionized process material.
  • the chamber body 106 and dome 104 may be made of metal, such as aluminum.
  • the chamber body 106 may be grounded via a coupling to ground 1 15.
  • a substrate support 124 may be disposed within the chamber interior volume 120 for supporting and chucking a substrate 101 , such as a semiconductor wafer or other such substrate as may be electrostatically retained.
  • the substrate support 124 may generally include an electrostatic chuck 150 (described in more detail below) and a hollow support shaft 1 12 for supporting the electrostatic chuck 150.
  • the hollow support shaft 1 12 provides a conduit to provide process gases, fluids, heat transfer fluids, power, or the like, to the electrostatic chuck 150.
  • the hollow support shaft 1 12 is coupled to a lift mechanism 1 13 which provides vertical movement of the electrostatic chuck 150 between an upper, processing position (as shown in FIG. 1 ) and a lower, transfer position (not shown).
  • a bellows assembly 1 10 is disposed about the hollow support shaft 1 12 and is coupled between the electrostatic chuck 150 and a bottom surface 126 of chamber 100 to provide a flexible seal that allows vertical motion of the electrostatic chuck 150 while preventing loss of vacuum from within the chamber 100.
  • the bellows assembly 1 10 also includes a lower bellows flange 164 in contact with an o-ring 165 which contacts bottom surface 126 to help prevent loss of chamber vacuum.
  • the hollow support shaft 1 12 provides a conduit for coupling a coolant fluid supply 142, a gas supply 141 , a chucking power supply 140, and one or more RF sources 1 17 (e.g., an RF plasma power supply and/or an RF bias power supply) to the electrostatic chuck 150.
  • the RF power supply 1 17 may be coupled to the electrostatic chuck via an RF matching network 1 16.
  • a substrate lift 130 may include lift pins 109 mounted on a platform 108 connected to a shaft 1 1 1 which is coupled to a second lift mechanism 132 for raising and lowering the substrate lift 130 so that the substrate 101 may be placed on or removed from the electrostatic chuck 150.
  • the electrostatic chuck 150 includes thru- holes (described below) to receive the lift pins 109.
  • a bellows assembly 131 is coupled between the substrate lift 130 and bottom surface 126 to provide a flexible seal which maintains the chamber vacuum during vertical motion of the substrate lift 130.
  • the chamber 100 is coupled to and in fluid communication with a vacuum system 1 14, which may include a throttle valve (not shown) and vacuum pump (not shown) which are used to exhaust the chamber 100.
  • the pressure inside the chamber 100 may be regulated by adjusting the throttle valve and/or vacuum pump.
  • the chamber 100 is also coupled to and in fluid communication with a process gas supply 1 18 which may supply one or more process gases to the chamber 100 for processing a substrate disposed therein.
  • a plasma 102 may be created in the chamber interior volume 120 to perform one or more processes.
  • the plasma 102 may be created by coupling power from a plasma power source (e.g., RF power supply 1 17) to a process gas via one or more electrodes (described below) within the chamber interior volume 120 to ignite the process gas and create the plasma 102.
  • a plasma may be formed in the chamber interior volume 120 by other methods.
  • a bias power may be provided from a bias power supply (e.g., RF power supply 1 17) to one or more electrodes (described below) disposed within the substrate support or the electrostatic chuck 150 to attract ions from the plasma towards the substrate 101 .
  • a target 166 comprising a source material to be deposited on a substrate 101 may be disposed above the substrate and within the chamber interior volume 120.
  • the target 166 may be supported by a grounded conductive portion of the chamber 100, for example an aluminum adapter through a dielectric isolator.
  • a controllable DC power source 168 may be coupled to the chamber 100 to apply a negative voltage, or bias, to the target 166.
  • An RF power supply 1 17A-B may be coupled to the substrate support 124 in order to induce a negative DC bias on the substrate 101 .
  • a negative DC self-bias may form on the substrate 101 during processing.
  • the substrate support 124 may be grounded or left electrically floating.
  • an RF power supply 170 may also be coupled to the chamber 100 to apply RF power to the target 166 to facilitate control of the radial distribution of a deposition rate on substrate 101 .
  • ions in the plasma 102 created in the chamber 100 react with the source material from the target 166. The reaction causes the target 166 to eject atoms of the source material, which are then directed towards the substrate 101 , thus depositing material.
  • a rotatable magnetron may be positioned proximate a back surface of the target 166.
  • the magnetron may include a plurality of magnets configured to produce a magnetic field within the chamber 100, generally parallel and close to the surface of the target 166 to trap electrons and increase the local plasma density, which in turn increases the sputtering rate.
  • the magnets produce an electromagnetic field around the top of the chamber 100, and are rotated to rotate the electromagnetic field which influences the plasma density of the process to more uniformly sputter the target 166.
  • the electrostatic chuck 150 may comprise a dielectric member having a support surface for supporting a substrate having a given width (e.g., 150 mm, or other sized silicon wafers or other substrates).
  • the substrate support 124 may include a cooling ring assembly 152 disposed beneath the electrostatic chuck 150 to cool the electrostatic chuck 150. Coolant may be supplied to the cooling ring assembly 152 via a coolant fluid supply 142.
  • the cooling ring assembly 152 is discussed below in detail with respect to Figure 2 and 3.
  • FIG. 2 depicts a schematic cross-sectional side view of substrate support 124.
  • the substrate support 124 includes an electrostatic chuck 150.
  • the electrostatic chuck 150 may be formed from a dielectric material such as a ceramic, although other materials may be used.
  • a low operating temperature aluminum nitride for example, AN2010 by KYOCERA
  • AN2010 by KYOCERA may be used which has a thermal conductivity of greater or equal than 150W/m-K. This greatly aids in the removal of heat from the substrate 101 and transferring this heat to the cooling ring assembly 152.
  • a substrate support surface of the electrostatic chuck 150 may have a diameter 230 of about 140 to about 160 mm to support a 150 mm substrate 101 .
  • the diameter 230 may be about 144 mm to support a 150 mm substrate 101 .
  • Other diameters may be used as desired to support different sized substrates.
  • the electrostatic chuck 150 may include one or more lift pin holes 228 formed though the body of the electrostatic chuck 150 which may have lift pins disposed therethrough to raise and lower a substrate 101 onto the top surface of the electrostatic chuck 150.
  • the electrostatic chuck 150 may also have a gas hole 222 formed though the body of the electrostatic chuck 150 which may be used to supply a gas to gas channels that may be formed on the top surface of the electrostatic chuck 150, thereby providing the gas to the backside of the substrate 101 when disposed on the electrostatic chuck 150.
  • An annular support ring 212 may be coupled to a backside of the electrostatic chuck 150.
  • the annular support ring 212 having a central opening, may be brazed or welded to the backside of the electrostatic chuck 150.
  • the annular support ring 212 may be fabricated from an iron- nickel-cobalt alloy, or any other material having a similar coefficient of thermal expansion and structural properties.
  • An annular retention ring 214 having a central opening may be disposed within the central opening of the support ring 212. The retention ring 214 may be coupled to the annular support ring 212.
  • a cooling ring assembly 152 may be disposed proximate a bottom surface of the electrostatic chuck 150 to cool the electrostatic chuck 150.
  • the cooling ring assembly 152 has a diameter that is smaller than the substrate support surface of the electrostatic chuck 150.
  • the cooling ring assembly 152 has a diameter that is smaller than a diameter along which the lift pin holes 228 are located.
  • the cooling ring assembly 152 may be thermally coupled to the electrostatic chuck 150 via a thermal gasket 210.
  • the thermal gasket 210 may be layer of directionally conductive (e.g., vertically) graphite material. This advantageously improves the thermal conduction to the cooling ring.
  • Conventional cooling rings typically rely on contact between the cooling ring and ceramic which is not ideal as the surfaces are not 100% flat leading to minute air gaps and poor thermal conductivity. Other thermal gasketing materials are also possible such as thermal paste.
  • the cooling ring assembly 152 may include a cooling section 250 coupled to a cap 252.
  • the cooling section 250 may be formed from copper.
  • other materials such as stainless steel, aluminum, or the like may be used depending on the thermal conductivity desired and the processing environment in which the cooling ring 152 will be operating in.
  • the thermal conductivity of the cooling section is about 300 W/m-K or greater.
  • the cap 252 may be formed from stainless steel, or other materials that may facilitate welding of cooling fluid feed tubes.
  • the cooling section 250 and cap 252 may be bolted, brazed, welded, pinned, etc. together.
  • alignment pins 218 may be used to align the cooling section 250 and cap 252.
  • the cooling section 250 includes a coolant channel 258 for flowing a coolant therethrough.
  • a first end of the coolant channel 258 may be couple to a first cooling supply tube 302 for providing coolant to the cooling section 250.
  • the coolant may flow through coolant channel 258, which may be formed as a groove in the body of the cooling section 250 in a serpentine configuration.
  • a second end of the coolant channel 258 may be coupled to a cooling fluid outlet tube 304 to remove the heated coolant from the cooling ring assembly 152.
  • the cap 252 is coupled to the cooling section 250 in such a way to prevent the coolant from leaking from coolant channel 258.
  • the cap 252 may include a central opening 262 that aligns with and has the same shape and size as opening 254 in the cooling section 250.
  • the cooling section 250 may include a plurality of openings 256 with alignments pins 216 disposed therein for aligning the cooling ring assembly 152 to the electrostatic chuck 150.
  • the cooling ring assembly 152 may have an central opening 254 disposed through both the cooling section 250 and cap 252 to allow for various contacts/piping/connections to the electrostatic chuck 150 to pass through.
  • spring-retained thermocouples 220 may pass through opening 254 to connect to a backside of the electrostatic chuck 150.
  • gas/electrical lines 232 may pass through opening 254 to connect to the electrostatic chuck 150.
  • the cooling ring assembly 152 may include a plurality of fastener holes 260 disposed about an outer diameter of the ring assembly 152.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

L'invention concerne un mandrin de support de substrat pour utilisation dans un système de traitement de substrat. Selon certains modes de réalisation, un support de substrat pour utilisation dans une chambre de traitement de substrat peut comprendre un mandrin électrostatique ayant une surface de support de substrat supérieure et une surface inférieure, et un ensemble d'anneau de refroidissement ayant une ouverture centrale disposé à proximité de la surface inférieure du mandrin électrostatique, l'ensemble d'anneau de refroidissement comprenant une section de refroidissement ayant une surface supérieure thermiquement couplée à la surface inférieure du mandrin électrostatique, la section de refroidissement ayant un canal de refroidissement formé dans une surface inférieure de la section de refroidissement, et un couvercle couplé à une surface inférieure de la section de refroidissement et qui scelle de manière fluide le canal de refroidissement formé dans la section de refroidissement.
PCT/US2014/020272 2013-03-15 2014-03-04 Refroidissement de mandrin de support de substrat pour chambre de dépôt WO2014149678A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201480003693.8A CN105027274B (zh) 2013-03-15 2014-03-04 用于沉积腔室的基板支撑夹盘冷却
KR1020157018333A KR20150130264A (ko) 2013-03-15 2014-03-04 증착 챔버용 기판 지지 척 냉각

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201361788508P 2013-03-15 2013-03-15
US61/788,508 2013-03-15
US14/187,747 2014-02-24
US14/187,747 US9668373B2 (en) 2013-03-15 2014-02-24 Substrate support chuck cooling for deposition chamber

Publications (1)

Publication Number Publication Date
WO2014149678A1 true WO2014149678A1 (fr) 2014-09-25

Family

ID=51526108

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2014/020272 WO2014149678A1 (fr) 2013-03-15 2014-03-04 Refroidissement de mandrin de support de substrat pour chambre de dépôt

Country Status (5)

Country Link
US (2) US9668373B2 (fr)
KR (1) KR20150130264A (fr)
CN (2) CN108505010B (fr)
TW (1) TWI631653B (fr)
WO (1) WO2014149678A1 (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10373850B2 (en) * 2015-03-11 2019-08-06 Asm Ip Holding B.V. Pre-clean chamber and process with substrate tray for changing substrate temperature
JP6596362B2 (ja) * 2015-12-02 2019-10-23 東京エレクトロン株式会社 減圧された空間において被加工物を処理する処理装置
US11008651B2 (en) * 2016-04-11 2021-05-18 Spts Technologies Limited DC magnetron sputtering
US10079168B2 (en) * 2016-11-08 2018-09-18 Lam Research Corporation Ceramic electrostatic chuck including embedded Faraday cage for RF delivery and associated methods for operation, monitoring, and control
KR102000021B1 (ko) * 2016-11-30 2019-07-17 세메스 주식회사 기판 지지 유닛, 열처리 유닛 및 이를 포함하는 기판 처리 장치
US10704142B2 (en) * 2017-07-27 2020-07-07 Applied Materials, Inc. Quick disconnect resistance temperature detector assembly for rotating pedestal
US11915850B2 (en) * 2017-12-20 2024-02-27 Applied Materials, Inc. Two channel cosine-theta coil assembly
JP6918042B2 (ja) * 2019-03-26 2021-08-11 日本碍子株式会社 ウエハ載置装置
US11056372B2 (en) * 2019-04-30 2021-07-06 Applied Materials, Inc. Low temperature biasable substrate support
US11373893B2 (en) * 2019-09-16 2022-06-28 Applied Materials, Inc. Cryogenic electrostatic chuck
US11424096B2 (en) * 2019-11-05 2022-08-23 Applied Materials, Inc. Temperature controlled secondary electrode for ion control at substrate edge
CN112951695B (zh) * 2019-11-26 2023-09-29 中微半导体设备(上海)股份有限公司 冷却管组件、冷却装置和等离子体处理设备
CN111477569B (zh) * 2020-04-10 2024-02-27 北京北方华创微电子装备有限公司 一种半导体设备中的加热装置及半导体设备
CN111647878B (zh) * 2020-07-27 2021-07-27 中国科学院半导体研究所 隔热导电偏压衬底托
CN117051367B (zh) * 2023-08-18 2024-05-31 上海陛通半导体能源科技股份有限公司 磁控溅射设备
CN117966081B (zh) * 2024-03-28 2024-05-28 山西晋东南神话新材料有限公司 一种氮化炉

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6081414A (en) * 1998-05-01 2000-06-27 Applied Materials, Inc. Apparatus for improved biasing and retaining of a workpiece in a workpiece processing system
US20020129475A1 (en) * 2001-03-19 2002-09-19 Applied Materials, Inc. Pedestal assembly with enhanced thermal conductivity
US6664738B2 (en) * 2002-02-27 2003-12-16 Hitachi, Ltd. Plasma processing apparatus
US6669783B2 (en) * 2001-06-28 2003-12-30 Lam Research Corporation High temperature electrostatic chuck
KR100798813B1 (ko) * 2006-07-25 2008-01-28 삼성전자주식회사 정전척 어셈블리 및 정전척 온도 제어방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5158128A (en) * 1988-09-01 1992-10-27 Sumitec, Inc. Thermocouple for a continuous casting machine
US5192849A (en) * 1990-08-10 1993-03-09 Texas Instruments Incorporated Multipurpose low-thermal-mass chuck for semiconductor processing equipment
JP3870824B2 (ja) * 2001-09-11 2007-01-24 住友電気工業株式会社 被処理物保持体、半導体製造装置用サセプタおよび処理装置
US6677167B2 (en) * 2002-03-04 2004-01-13 Hitachi High-Technologies Corporation Wafer processing apparatus and a wafer stage and a wafer processing method
US7535100B2 (en) * 2002-07-12 2009-05-19 The United States Of America As Represented By The Secretary Of The Navy Wafer bonding of thinned electronic materials and circuits to high performance substrates
US7544251B2 (en) * 2004-10-07 2009-06-09 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
JP2006140367A (ja) * 2004-11-15 2006-06-01 Sumitomo Electric Ind Ltd 半導体製造装置用加熱体およびこれを搭載した加熱装置
US8226769B2 (en) * 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
JP5660753B2 (ja) * 2007-07-13 2015-01-28 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ プラズマエッチング用高温カソード
JP6285620B2 (ja) * 2011-08-26 2018-02-28 新光電気工業株式会社 静電チャック及び半導体・液晶製造装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6081414A (en) * 1998-05-01 2000-06-27 Applied Materials, Inc. Apparatus for improved biasing and retaining of a workpiece in a workpiece processing system
US20020129475A1 (en) * 2001-03-19 2002-09-19 Applied Materials, Inc. Pedestal assembly with enhanced thermal conductivity
US6669783B2 (en) * 2001-06-28 2003-12-30 Lam Research Corporation High temperature electrostatic chuck
US6664738B2 (en) * 2002-02-27 2003-12-16 Hitachi, Ltd. Plasma processing apparatus
KR100798813B1 (ko) * 2006-07-25 2008-01-28 삼성전자주식회사 정전척 어셈블리 및 정전척 온도 제어방법

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TW201442143A (zh) 2014-11-01
CN108505010A (zh) 2018-09-07
US20140268479A1 (en) 2014-09-18
US9865489B2 (en) 2018-01-09
US20170229334A1 (en) 2017-08-10
CN105027274B (zh) 2018-06-01
TWI631653B (zh) 2018-08-01
CN105027274A (zh) 2015-11-04
US9668373B2 (en) 2017-05-30
CN108505010B (zh) 2020-04-17
KR20150130264A (ko) 2015-11-23

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