WO2014133367A1 - Light-emitting module - Google Patents

Light-emitting module Download PDF

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Publication number
WO2014133367A1
WO2014133367A1 PCT/KR2014/001701 KR2014001701W WO2014133367A1 WO 2014133367 A1 WO2014133367 A1 WO 2014133367A1 KR 2014001701 W KR2014001701 W KR 2014001701W WO 2014133367 A1 WO2014133367 A1 WO 2014133367A1
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WO
WIPO (PCT)
Prior art keywords
light emitting
housing
emitting module
lens
diode chip
Prior art date
Application number
PCT/KR2014/001701
Other languages
French (fr)
Korean (ko)
Inventor
이종민
조양식
Original Assignee
서울반도체 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 서울반도체 주식회사 filed Critical 서울반도체 주식회사
Priority to US14/771,321 priority Critical patent/US9673358B2/en
Priority claimed from KR1020140024132A external-priority patent/KR20140108172A/en
Publication of WO2014133367A1 publication Critical patent/WO2014133367A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements

Definitions

  • the present invention relates to a light emitting module, and more particularly, to a light emitting module that can not only improve appearance quality but also maximize light efficiency.
  • a portable terminal such as a mobile phone including a camera module as a medium for transmitting video information has been developed. It is becoming popular.
  • the camera module included in the mobile phone includes an image sensor that receives light from the outside and recognizes it as an image, and includes a light emitting module that manually provides light to a subject, for example, to satisfy various needs of consumers.
  • the light emitting module used in the camera module selectively provides light according to a shooting environment. Therefore, the light emitting module is positioned around the camera module and exposed from the outside.
  • the light emitting module used in the camera module according to the related art generally has a problem of deterioration in appearance quality in which the yellow phosphor is visible when the yellow phosphor is not driven because the yellow phosphor is located on a light emitting diode chip that emits blue light.
  • An object of the present invention is to provide a light emitting module that can not only improve appearance quality such as disconnection but also maximize light efficiency.
  • a light emitting module includes a circuit board; A light emitting diode chip flip-bonded on the circuit board; And a housing disposed on the circuit board and surrounding the light emitting diode chip, wherein the housing has a reflecting portion having a curvature structure on an inner wall surface of the recess, thereby improving light efficiency.
  • the reflector may further improve light efficiency by including reflective regions having a curvature structure divided into at least two or more according to the height of the housing.
  • the reflector may be disposed within the first reflector and the first height positioned within a second height defined as the first height or more based on a first height equal to or higher than the height of the light emitting diode chip with respect to the circuit board. And a second reflecting portion positioned, each of the first and second reflecting portions including reflective regions having a curvature structure divided into at least two or more according to the height of the housing.
  • the light emitting module of the first reflecting unit extends horizontally and continuously along the inner wall surface of the housing.
  • the second reflecting part has a protrusion protruding in a lateral direction of the light emitting diode chip, and the protruding portion is formed in plural numbers spaced apart along a side of the light emitting diode chip.
  • the protrusion faces the side of the light emitting diode chip.
  • the reflector includes a stepped portion positioned at an interface between the first reflector and the protrusion.
  • the housing includes a plurality of protrusions protruding upward in the upper direction and a plurality of grooves provided at the outer lower end thereof.
  • An electronic device may be accommodated in at least one of the grooves.
  • a lens is provided on an upper surface of the housing, and the lens is located inside the protrusion.
  • the upper surface of the housing includes a plurality of receiving grooves, a lens is provided on the upper surface of the housing, the lower surface of the lens includes a plurality of projections accommodated in the receiving groove.
  • the light emitting diode chip includes a semiconductor layer, a wavelength conversion layer covering upper and lower surfaces of a substrate on which electrode pads are formed, and a TiO 2 diffusion layer covering the wavelength conversion layer.
  • the housing includes a protrusion located on an upper surface, and the protrusion is positioned adjacent to the reflecting part.
  • a lens is positioned on the housing, and the lens has a stepped structure at an edge of a lower surface thereof, and has a Fresnel lens structure inside the stepped structure.
  • the stepped structure faces the upper surface and the protrusion of the housing.
  • the circuit board includes a recess for receiving the light emitting diode chip, the recess extending from the reflecting portion.
  • the lens located on the housing, further comprising an adhesive member or adhesive layer for fixing the lens and the housing, the lens comprises at least one of silicon, epoxy, glass, PMMA, the adhesive member or adhesive layer Silver epoxy.
  • the circuit board may include a lead frame or a conductive pattern, and may be a PCB board or a ceramic board.
  • the present invention is provided with a reflective portion having a concave curvature structure along an inner surface of a recess of a housing made of a metal material to reflect light emitted from the LED chip in various paths. Therefore, the light emitting module of the present invention has an advantage of maximizing light efficiency by minimizing light lost therein.
  • the housing of the present invention can maximize the light efficiency by reflecting all the light emitted from the LED chip in various directions by the plurality of reflection regions of the curvature structure divided according to the height of the inner surface of the recess.
  • the light emitting module of the present invention further includes a TiO 2 diffusion layer covering the wavelength conversion layer, thereby covering the wavelength conversion layer including the yellow fluorescent layer with a white color, thereby improving appearance quality.
  • the present invention can improve the adhesive force.
  • the present invention can minimize the alignment error because the lens is aligned on the housing by the stepped structure.
  • FIG. 1 is a perspective view illustrating a light emitting module according to a first embodiment of the present invention.
  • FIG. 2 is a plan view illustrating the light emitting module of FIG. 1.
  • FIG. 3 is a cross-sectional view illustrating a light emitting module cut along the line II ′ of FIG. 1.
  • FIG. 4A is a plan view of the lower portion of the LED chip of FIG. 1, and FIG. 4B is a cross-sectional view taken along the line A-A of FIG.
  • FIG. 5 is a plan view illustrating a light emitting module according to a second embodiment of the present invention.
  • FIG. 6 is a cross-sectional view illustrating a light emitting module cut along a line II-II ′ of FIG. 5.
  • FIG. 7 is a plan view illustrating a light emitting module according to a third embodiment of the present invention.
  • FIG. 8 is a cross-sectional view illustrating a light emitting module cut along a line III-III ′ of FIG. 7.
  • FIG. 9 is a perspective view illustrating a light emitting module according to a fourth embodiment of the present invention.
  • FIG. 10 is a cross-sectional view illustrating a light emitting module according to a fifth embodiment of the present invention.
  • FIG. 11 is a cross-sectional view illustrating a light emitting module according to a sixth embodiment of the present invention.
  • FIG. 12 is a cross-sectional view illustrating a light emitting module according to a seventh embodiment of the present invention.
  • FIG. 1 is a perspective view illustrating a light emitting module according to a first embodiment of the present invention
  • FIG. 2 is a plan view illustrating the light emitting module of FIG. 1
  • FIG. 3 is a light emission cut along the line II ′ of FIG. 1.
  • the light emitting module 100 includes a circuit board 110, a housing 120, a light emitting diode chip 10, and a lens 150. do.
  • the circuit board 110 may include a lead frame (not shown) or a conductive pattern (not shown).
  • the circuit board 110 may be a PCB substrate or a ceramic substrate.
  • the housing 120 surrounds the periphery of the light emitting diode chip 10 and is located on the circuit board 110.
  • the housing 120 is made of a metal material, and may be attached onto the circuit board 110 using a soldering process or a silicone resin.
  • the housing 120 has a recess in a central portion thereof, a reflection portion 130 on an inner side surface of the recess, a plurality of protrusions 121 located on an upper surface thereof, and a plurality of groove portions 122 provided on an outer edge thereof. ).
  • the reflector 130 has a seamless curvature structure along the inner surface of the recess.
  • the reflector 130 has a function of improving light efficiency of the light emitting module 100 by reflecting light emitted from the light emitting diode chip 10 in various directions.
  • the reflector 130 may further be formed of a material having a high reflectance.
  • the reflector 130 may be coated with Ag.
  • the Ag may be coated on the entire housing 120, and may be coated on the circuit board 110.
  • the light emitted from the light emitting diode chip 10 is reflected in various directions according to the point reflected by the curvature structure of the reflecting unit 130, thereby the light emitted and lost in the lateral direction of the light emitting diode chip 10. Can be prevented.
  • the plurality of grooves 122 provide a space in which electronic devices that may be included in the light emitting module 100 are mounted, such as a zener diode (not shown).
  • the grooves 122 are spaced apart from each other along the outer lower portion of the housing 120. More specifically, the groove 122 is located at the bottom edge of the housing 120.
  • the groove 122 is limited to the structure formed in the corner region of the housing 120 so that a part of the circuit board 110 is exposed, but not limited thereto, and the lower end portion of the housing 120 is not limited thereto. Accordingly, the circuit board 110 may include a groove structure exposing the circuit board 110.
  • the plurality of grooves 122 are separated from recesses in which the light emitting diode chip 10 is located, and have a function of improving light efficiency.
  • a light emitting module has a problem in that a light emitting diode chip and an electronic device are disposed in a recess to absorb or reflect light emitted from the light emitting diode chip, thereby reducing the light efficiency of the light emitting module.
  • the groove 122 is provided to allow the electronic devices to be separated from the recess and to be mounted on the circuit board 110 to prevent the light efficiency of the electronic devices from being absorbed and reflected.
  • the light emitting module 100 of the present invention is provided with a zener diode (not shown) in any one of the plurality of grooves 122.
  • the zener diode has a function of preventing damage to the light emitting diode chip 10 by static electricity from the outside. That is, the zener diode has a function for implementing a stable driving light emitting module 100.
  • the protrusion 121 has an align function for fixing the position of the lens 150.
  • the protrusion 121 may be spaced apart from the upper surface of the housing 120 by a predetermined interval and protrude upward from the upper surface of the housing 121.
  • the inner side surface of the protrusion 121 may face the outer side surface of the lens 150.
  • the lens 150 has a planar structure at an upper surface thereof and a wedge structure at a lower surface thereof.
  • the structure of the lens 150 is not limited, and may be variously changed.
  • the lens 150 may have a Fresnel lens structure.
  • the Fresnel lens may have a plurality of patterns, and the plurality of patterns may correspond to the shape of the recess.
  • the plurality of patterns may be a circular structure corresponding to the recess of the circular structure.
  • the plurality of patterns may have a shape different from the recess shape.
  • the plurality of patterns may have a rectangular structure different from a recess of a circular structure.
  • the lens 150 is aligned with the upper surface of the housing 120 by the protrusion 121.
  • the lens 150 may be coupled on the upper surface of the housing 120 by an adhesive member (not shown) or an adhesive material (not shown).
  • the lens 150 is not particularly limited and may be silicon, epoxy, glass, PMMA, or the like.
  • the adhesive member (not shown) or the adhesive material (not shown) may be an epoxy.
  • the housing 120 of the present invention is made of a metal material and is provided with a reflective portion 130 having a concave curvature structure along the inner surface of the recess to reflect the light emitted from the LED chip 10 in various paths. You can. Therefore, the light emitting module 100 of the present invention has an advantage of maximizing light efficiency by minimizing light lost therein.
  • the light emitting diode chip 10 will be described in detail with reference to FIG. 4.
  • FIG. 4A is a plan view of the lower portion of the LED chip of FIG. 1, and FIG. 4B is a cross-sectional view taken along the line A-A of FIG.
  • the light emitting diode chip 10 of the present invention is flip bonded onto the direct circuit board 110 without using a bonding wire. Since the LED chip does not use a wire when bonding on the circuit board 110, it does not require a molding part to protect the wire, and removes a part of the wavelength conversion layer 50 to expose the bonding pad. No need to do it. Therefore, by adopting the light emitting diode chip 10, color deviation and luminance unevenness can be eliminated, and a module manufacturing process can be simplified as compared with using a light emitting diode chip using a bonding wire.
  • the light emitting diode chip 10 is a flip chip type semiconductor chip formed of a gallium nitride based compound semiconductor and may emit ultraviolet light or blue light.
  • the light emitting diode chip 10 includes a wavelength conversion layer 50.
  • the wavelength conversion layer 50 covers the light emitting diode chip 10.
  • a conformal coated wavelength converting layer 50 such as a phosphor layer, may be formed on the light emitting diode chip 10, and may convert the light emitted from the light emitting diode chip 10 to wavelength convert.
  • the wavelength conversion layer 50 is coated on the LED chip 10 and may cover the upper surface and the side surface of the LED chip 10.
  • the wavelength conversion layer 50 of the present invention is composed of, for example, a yellow fluorescent layer on the light emitting diode chip 10 emitting blue light.
  • the light emitting diode chip 10 further includes a TiO 2 diffusion layer 70 covering the wavelength conversion layer 50.
  • the TiO 2 diffusion layer 70 may cover both the upper surface and the side surface of the wavelength conversion layer 50.
  • the TiO 2 diffusion layer 70 covers the wavelength conversion layer 50 having a yellow color by a yellow fluorescent layer and converts the appearance into a white color, thereby improving appearance quality.
  • the conformal coated wavelength conversion layer 50 and the TiO 2 diffusion layer 70 are formed in advance when the LED chip 10 is manufactured and are formed on the circuit board 110 together with the LED chip 10. Can be mounted on
  • a first conductive semiconductor layer 23 is formed on the growth substrate 21, and a plurality of mesas M spaced apart from each other are formed on the first conductive semiconductor layer 23.
  • the plurality of mesas M may include an active layer 25 and a second conductivity type semiconductor layer 27, respectively.
  • the active layer 25 is positioned between the first conductive semiconductor layer 23 and the second conductive semiconductor layer 27.
  • the reflective electrodes 30 are positioned on the plurality of mesas M, respectively.
  • the plurality of mesas M may be formed on the growth substrate 21 by forming an epitaxial layer including the first conductive semiconductor layer 23, the active layer 25, and the second conductive semiconductor layer 27. After growing using the same, the second conductive semiconductor layer 27 and the active layer 25 may be formed by patterning the first conductive semiconductor layer 23 to expose the first conductive semiconductor layer 23. Sides of the plurality of mesas M may be formed to be inclined by using a technique such as photoresist reflow. The inclined profile of the mesa (M) side improves the extraction efficiency of the light generated in the active layer 25.
  • the plurality of mesas M may have an elongated shape extending in parallel to each other in one direction as shown. This shape simplifies forming a plurality of mesas M of the same shape in the plurality of chip regions on the growth substrate 21.
  • the reflective electrodes 30 may be formed on each mesa M after the plurality of mesas M are formed, but is not limited thereto.
  • the second conductive semiconductor layer 27 may be grown and mesas. It may be formed in advance on the second conductivity-type semiconductor layer 27 before forming (M).
  • the reflective electrode 30 covers most of the upper surface of the mesa M, and has a shape substantially the same as the planar shape of the mesa M.
  • the reflective electrodes 30 may include a reflective layer 28 and may further include a barrier layer 29.
  • the barrier layer 29 may cover the top and side surfaces of the reflective layer 28.
  • an edge of the first conductivity type semiconductor layer 23 may also be etched. Accordingly, the upper surface of the substrate 21 may be exposed. Side surfaces of the first conductivity-type semiconductor layer 23 may also be formed to be inclined.
  • a lower insulating layer 31 is formed to cover the plurality of mesas M and the first conductive semiconductor layer 23.
  • the lower insulating layer 31 has openings to allow electrical connection to the first conductive semiconductor layer 23 and the second conductive semiconductor layer 27 in a specific region.
  • the lower insulating layer 31 may have openings exposing the first conductivity type semiconductor layer 23 and openings exposing the reflective electrodes 30.
  • the current spreading layer 33 is formed on the lower insulating layer 31.
  • the current spreading layer 33 covers the plurality of mesas M and the first conductive semiconductor layer 23.
  • the current spreading layer 33 has openings located in the upper region of each mesa M to expose the reflective electrodes.
  • the current spreading layer 33 may be in ohmic contact with the first conductive semiconductor layer 23 through the openings of the lower insulating layer 31.
  • the current spreading layer 33 is insulated from the plurality of mesas M and the reflective electrodes 30 by the lower insulating layer 31.
  • An upper insulating layer 35 is formed on the current spreading layer 33.
  • the upper insulating layer 35 has openings that expose the reflective electrodes 30, with openings that expose the current spreading layer 33.
  • the first pad 37a and the second pad 37b are formed on the upper insulating layer 35.
  • the first pad 37a is connected to the current spreading layer 33 through the opening of the upper insulating layer 35
  • the second pad 37b is connected to the reflective electrodes 30 through the openings of the upper insulating layer 35.
  • Connect to The first pad 37a and the second pad 37b may be connected to bumps or used as pads for SMT to mount the light emitting diode to a submount, package, or printed circuit board.
  • the light emitting diode chip 10 includes a wavelength conversion layer 50 covering all of regions except for one surface of the first and second pads 37a and 37b which are grounded with a package or a printed circuit board.
  • a TiO 2 diffusion layer 70 is formed to cover the wavelength conversion layer 50.
  • FIG. 5 is a plan view illustrating a light emitting module according to a second exemplary embodiment of the present invention
  • FIG. 6 is a cross-sectional view illustrating a light emitting module cut along a line II-II ′ of FIG. 5.
  • the light emitting module 200 according to the second embodiment of the present invention may include the light emitting module 100 according to the first embodiment except for the housing 220. Since they are the same, the same reference numerals are used and detailed description thereof will be omitted.
  • the housing 220 surrounds the periphery of the light emitting diode chip 10 and is located on the circuit board 110.
  • the housing 220 is made of a metal material and may be attached onto the circuit board 110 using a soldering process or a silicone resin.
  • the housing 220 has a recess in a central portion thereof, a reflecting portion 230 on an inner side surface of the recess, a plurality of protrusions 221 located on an upper surface thereof, and a plurality of groove portions 222 disposed on an outer edge thereof. ).
  • the reflector 230 has a seamless curvature structure along the inner surface of the recess.
  • the reflector 230 may be further formed of a material having a high reflectance.
  • the reflector 230 may be coated with Ag.
  • the Ag may be coated on the entire housing 220, and may be coated on the circuit board 110.
  • the reflector 230 has first to fourth reflective regions 231 to 234 divided in an upward direction based on the circuit board 110.
  • the first to fourth reflective regions 231 to 234 may be divided according to the heights h1 to h4 of the housing 230.
  • Each of the first to fourth reflective regions 231 to 234 has a curvature structure that is seamless in the horizontal direction. More specifically, the first to fourth reflective regions 231 to 234 have a curvature structure surrounding the light emitting diode chip 10.
  • Light emitted from the light emitting diode chip 10 is reflected in various directions by the curvature structure of the first to fourth reflective regions 231 to 234 divided according to the heights h1 to h4 of the housing 220.
  • the reflector 230 includes a plurality of first to fourth reflective regions 231 to 234 divided according to the heights h1 to h4 of the housing 220.
  • the light emitted from the chip 10 may be reflected in various directions to improve light efficiency of the light emitting module 200.
  • the light emitted from the light emitting diode chip 10 is reflected in various directions according to the point reflected by the curvature structure of the reflecting unit 230, thereby the light emitted and lost in the lateral direction of the light emitting diode chip 10. Can be prevented.
  • the reflector 230 defines a curvature structure of the first to fourth reflective regions 231 to 234 divided into four according to the height h1 to h4 of the housing 220 in the second embodiment of the present invention. Although not limited thereto, the reflector 230 may include all of the structures divided into at least two or more according to the height of the housing 220.
  • the light emitting module 200 according to the second embodiment of the present invention described above has a plurality of curvatures divided in the recess inner surface of the metal housing 220 according to the height h1 to h4 of the housing 220.
  • a reflector 230 including first to fourth reflective regions 231 to 234 having a structure may be provided to reflect light emitted from the LED chip 10 through various paths. Therefore, the light emitting module 200 of the present invention has an advantage of maximizing light efficiency by minimizing light lost therein.
  • FIG. 7 is a plan view illustrating a light emitting module according to a third embodiment of the present invention
  • FIG. 8 is a cross-sectional view illustrating a light emitting module cut along a line III-III ′ of FIG. 7.
  • the light emitting module 300 according to the third embodiment of the present invention is the light emitting module (100 of FIG. 1) according to the first embodiment except for the housing 320. Since they are the same, the same reference numerals are used and detailed description thereof will be omitted.
  • the housing 320 surrounds the periphery of the light emitting diode chip 10 and is located on the circuit board 110.
  • the housing 320 is made of a metal material, and may be attached onto the circuit board 110 using a soldering process or a silicone resin.
  • the housing 320 has a recess in a central portion thereof, and includes first and second reflectors 330 and 340 on the inner side of the recess, a plurality of protrusions 321 located on the upper surface, and an outer edge thereof. It includes a plurality of grooves 322 provided.
  • the second reflector 340 is positioned within the first height h1 based on the circuit board 110, and the first reflector 330 is the overall height of the housing 320 except for the first height h1. It is located within the fifth height h5 defined by.
  • the first and second reflectors 330 and 340 may further be formed of a material having high reflectance.
  • the first and second reflectors 330 and 340 may be coated with Ag.
  • the Ag may be coated on the entire housing 320 and may be coated on the circuit board 110.
  • the first reflector 330 has a seamless curvature structure along the inner surface of the recess.
  • the first reflector 330 has first to fourth reflective regions 331 to 334 divided in an upper direction above the first height h1 based on the circuit board 110.
  • the first to fourth reflective regions 331 to 334 may be divided according to the height of the housing 320. That is, the first to fourth reflective regions 331 to 334 may be divided above the first height h1 of the housing 320.
  • Each of the first to fourth reflective regions 331 to 334 has a curvature structure that is seamless in the horizontal direction. More specifically, the first to fourth reflective regions 331 to 334 have a curvature structure surrounding the light emitting diode chip 10.
  • the light emitted from the light emitting diode chip 10 has a curvature structure of the first to fourth reflective regions 331 to 334 divided within the fifth height h5 except for the first height h1 of the housing 320. Are reflected in various directions.
  • the second reflector 340 may be formed to be spaced apart at a predetermined interval in the horizontal direction within the first height h1.
  • the second reflector 340 has a function of compensating for a gap between both side surfaces of the light emitting diode chip 10 and the housing 320. More specifically, the side surface of the light emitting diode chip 10 and the lower end of the inner surface of the housing 320 have different intervals according to the structure of the light emitting diode chip 10. For example, an interval between an edge of the LED chip 10 and an inner surface of the housing 320 is smaller than an interval between a side region of the LED chip 10 and an inner surface of the housing 320. Therefore, the light reflected from the housing 320 may be minutely uneven in the corner region and the side region of the light emitting diode chip 10.
  • the second reflecting unit 340 of the present invention has a function of compensating for non-uniform light due to the difference in distance between the side surface of the LED chip 10 and the lower end of the inner surface of the housing 320.
  • the second reflector 340 is formed in plural along the inner surface of the recess so as to correspond to four side surfaces of the LED chip 10.
  • the second reflector 340 has a linear structure symmetrical with four sides of the light emitting diode chip 10 based on the plan view of FIG. 7.
  • the second reflector 340 faces the side surface of the light emitting diode chip 10 within the first height h1 of the housing 320 to protrude toward the inner surface of the light emitting diode chip 10.
  • a protrusion 341 and a stepped portion 343 formed by the protrusion 341 are included.
  • the protrusion 341 includes fifth and sixth reflective regions 341a and 341b divided in an upper direction of the housing 320.
  • the fifth and sixth reflective regions 341a and 341b may be divided according to the height of the housing 320 within the first height h1.
  • the fifth and sixth reflecting regions 341a and 341b have a curvature structure divided in the second reflecting portion 340.
  • the light emitted from the outside of the light emitting diode chip 10 is diverted in various directions by the curvature structures of the fifth and sixth reflective regions 341a and 341b divided within the first height h1 of the housing 320. Reflected.
  • the first height h1 has a height higher than or equal to that of the LED chip 10.
  • the second reflector 340 of the present invention has been described with a limited curvature structure of the fifth and sixth reflective regions 341a and 341b divided into two, but is not limited thereto, and the curvature structure divided into at least three or more. It may include.
  • the step part 343 may be formed at a boundary area between the protrusion part 341 and the first reflecting part 330.
  • the first and second reflective parts 330 and 340 according to the third exemplary embodiment of the present invention may include a plurality of first to sixth reflective areas 331 to 334, 341a and 341b divided according to the height of the housing 320. Including the light reflected from the light emitting diode chip 10 in a variety of directions for all the light emitted from the light emitting module 300 can be improved.
  • the light emitting module 300 reflects the light emitted from the side surface of the light emitting diode chip 10 by the second reflecting unit 340, thereby providing the light emitting diode chip 10. Compensating for the minute difference of the reflected light due to the difference between the gap between the lower end of the inner surface of the housing 320 to prevent light loss and at the same time have an overall uniform light.
  • FIG. 9 is a perspective view illustrating a light emitting module according to a fourth embodiment of the present invention.
  • the light emitting module 400 includes a circuit board 110, a housing 420, a light emitting diode chip (not shown), and a lens 450.
  • the housing 420 surrounds a periphery of a light emitting diode chip (not shown) and is located on the circuit board 110.
  • the housing 420 is made of a metal material and may be attached onto the circuit board 110 using a soldering process or a silicone resin.
  • the housing 420 has a recess in a central portion thereof, a reflection portion (not shown) on an inner side surface of the recess, a plurality of receiving grooves 421 located on an upper surface thereof, and a plurality of groove portions provided on an outer edge thereof. 422.
  • the plurality of receiving grooves 421 may be formed around the upper edge region of the housing 420.
  • the plurality of receiving grooves 421 accommodate a plurality of protrusions 451 formed on the lower surface of the lens 450.
  • the protrusion 451 may be formed around a lower edge region of the lens 450, and may have a structure protruding downward of the lens 450.
  • the protrusion 451 and the receiving groove 421 may be formed in the same shape.
  • the lens 450 has the plurality of protrusions 451 accommodated in the plurality of accommodation grooves 421 of the housing 420 and is aligned on the upper surface of the housing 420.
  • the lens 450 may be coupled on the upper surface of the housing 420 by an adhesive member (not shown) or an adhesive material (not shown).
  • the plurality of grooves 422 provide a space in which electronic devices that may be included in the light emitting module 400 are mounted, such as a zener diode (not shown).
  • the groove 422 is spaced apart from each other along an outer lower portion of the housing 420. More specifically, the groove 422 is located at the bottom edge of the housing 420.
  • the groove 422 is limited to the structure formed in the corner region of the housing 420 so that a part of the circuit board 110 is exposed, but not limited to this, the lower end of the housing 420 Accordingly, the circuit board 110 may include a groove structure exposing the circuit board 110.
  • the light emitting module 400 of the present invention is provided with a zener diode (not shown) in any one of the plurality of grooves 422.
  • the inner surface structure of the housing 420 of the light emitting module 400 according to the fourth embodiment of the present invention may be any one of the inner surface structures of the housings according to the first to third embodiments of the present invention.
  • FIG. 10 is a cross-sectional view illustrating a light emitting module according to a fifth embodiment of the present invention.
  • the light emitting module 500 has all configurations except the housing 520 and the lens 550. 3 and the same as 100), the same reference numerals are written together, and detailed description thereof will be omitted.
  • the housing 520 is disposed on the circuit board 110 and surrounds the LED chip 10 mounted on the circuit board 110.
  • the circuit board 110 may include a lead frame (not shown) or a conductive pattern (not shown), and may be a PCB substrate or a ceramic substrate.
  • the housing 520 has a recess in a central portion thereof, and includes a protrusion 521 disposed on an upper surface thereof, and a reflecting portion 530 positioned on an inner surface thereof.
  • the reflector 530 has a function of improving light efficiency of the light emitting module 500 by reflecting light emitted from the LED chip 10 in various directions.
  • the reflector 530 has a seamless curvature structure along the inner surface of the recess.
  • the reflective part 530 is limited to one curvature structure, but the present invention is not limited thereto, and the reflective part 530 may include a plurality of reflective areas divided in the vertical direction.
  • the reflector 530 may be further formed of a material having a high reflectance.
  • the reflector 530 may be coated with Ag.
  • the Ag may be coated on the entire housing 520, and may be coated on the circuit board 110.
  • the protrusion 521 is positioned in an area adjacent to the reflector 530.
  • the protrusion 521 protrudes in a ring type along the edge of the recess on the upper surface.
  • the protrusion 521 is limited to a ring type, but is not limited thereto, and may be variously changed according to the shape of the recess.
  • the upper surface and the protrusion 521 are in contact with the lens 550.
  • the lens 550 includes a top surface of a flat planar structure and a bottom surface having a stepped structure 551 at an edge thereof.
  • the lens 550 may be changed according to the shape of the recess.
  • the stepped structure 551 faces the upper surface and the protrusion 521 of the housing.
  • the stepped structure 551 may be in surface contact with the top surface and the protrusion 521 of the housing 520.
  • the lens 550 is not particularly limited, and may be silicon, epoxy, glass, PMMA, or the like.
  • an adhesive layer (not shown) is positioned between the stepped structure 551 and the upper surface of the housing 520 and the protrusion 521.
  • the adhesive layer (not shown) may be epoxy.
  • the lower surface of the lens 550 may be changed according to the shape of the recess.
  • the lower surface of the lens 550 may be a Fresnel lens type.
  • the Fresnel lens may have a plurality of patterns, and the plurality of patterns may correspond to the shape of the recess.
  • the plurality of patterns may be a circular structure corresponding to the recess of the circular structure.
  • the plurality of patterns may have a shape different from the recess shape.
  • the plurality of patterns may have a rectangular structure different from a recess of a circular structure.
  • the present invention may include a reflector 530 having a curvature structure along the inner surface of the recess to reflect light emitted from the LED chip 10 through various paths. Therefore, the light emitting module 500 of the present invention has an advantage of maximizing light efficiency by minimizing light lost therein.
  • the contact area with the housing 520 is widened by the lens 550 having the stepped structure 551, thereby improving adhesion.
  • the present invention can minimize the alignment error because the lens 550 is aligned on the housing 520 by the stepped structure 551.
  • FIG. 11 is a cross-sectional view illustrating a light emitting module according to a sixth embodiment of the present invention.
  • the circuit board 610 has a concave portion 611 that accommodates the light emitting diode chip 10 on an upper surface thereof.
  • the concave portion 611 includes an inclined inner surface, and the inclined surface reflects light emitted from the light emitting diode chip 10.
  • the inner side surface of the concave portion 611 may extend from the reflecting portion 530 of the curvature structure.
  • the circuit board 610 may include a lead frame (not shown) or a conductive pattern (not shown), and may be a PCB substrate or a ceramic substrate.
  • the concave portion 611 and the reflecting portion 530 are limited to the structure in which they are described. However, the concave portion 611 may be spaced at a predetermined interval in the inward direction of the reflecting portion 530. .
  • the present invention includes a housing 520 having a curvature reflecting portion 530 along the inner surface of the recess and a circuit board 610 having a recess 611 for receiving the light emitting diode chip 100.
  • Light emitted from the diode chip 10 may be reflected by various paths. Therefore, the light emitting module 600 of the present invention has an advantage of maximizing light efficiency by minimizing light lost therein.
  • the adhesive force may be improved.
  • the present invention can minimize the alignment error because the lens 550 is aligned on the housing 520 by the stepped structure 551.
  • FIG. 12 is a cross-sectional view illustrating a light emitting module according to a seventh embodiment of the present invention.
  • the light emitting module 700 includes a circuit board 110, a light emitting diode package 710, and a housing 620.
  • the LED package 710 includes a LED chip and a lens mounted on a substrate.
  • the light emitting diode package 710 may be a top light emitting type.
  • the light emitting diode chip is not particularly limited and may be a vertical type or a horizontal type.
  • the light emitting diode package 710 is mounted on the circuit board 110.
  • the housing 620 is disposed on the circuit board 110 and has a recess 625 in the center thereof to accommodate the LED package 710.
  • the circuit board 110 may include a lead frame (not shown) or a conductive pattern (not shown), and may be a PCB substrate or a ceramic substrate.
  • the housing 620 includes a reflector 630 on an inner side surface.
  • the reflector 630 has a function of improving light efficiency of the light emitting module 700 by reflecting light emitted from the light emitting diode package 710 in various directions.
  • the reflector 630 has a seamless curvature structure along the inner surface of the recess 625.
  • the reflective part 630 is described with a limited curvature structure, but is not limited thereto and may be divided into a plurality of reflective areas in the vertical direction.
  • the reflector 630 may further be formed of a material having a high reflectance.
  • the reflector 630 may be coated with Ag.
  • the Ag may be coated on the entire housing 620 and may be coated on the circuit board 110.
  • the present invention may include a housing 620 having a reflective portion 630 having a curvature structure along an inner surface of the recess to reflect light emitted from the LED package 710 in various paths. Therefore, the light emitting module 700 of the present invention has an advantage of maximizing light efficiency by minimizing light lost therein.

Abstract

Disclosed is a light-emitting module capable of not only improving appearance quality but also maximizing light efficiency. The disclosed light-emitting module comprises: a circuit board; a light-emitting diode chip which is flip-bonded on the circuit board; and a housing which is positioned on the circuit board and envelops the light-emitting diode chip, wherein the housing has a reflective part having a curvature structure on the recessed inner wall surface thereof, thereby being capable of improving the light efficiency.

Description

발광 모듈Light emitting module
본 발명은 발광 모듈에 관한 것으로, 특히 외관 품질을 향상시킬 수 있을 뿐만 아니라 광 효율을 극대화할 수 있는 발광 모듈에 관한 것이다.The present invention relates to a light emitting module, and more particularly, to a light emitting module that can not only improve appearance quality but also maximize light efficiency.
최근 들어 피사체를 촬영하고, 촬영된 데이터를 메모리와 같은 기록매체에 기록하는 디지털 카메라가 널리 보급되고 있으며, 상기 디지털 카메라뿐만 아니라 동영상 정보 전달의 매개체로서 카메라 모듈을 포함하는 핸드폰 등의 휴대 단말기가 개발되어 보급되고 있다.Recently, digital cameras for photographing a subject and recording the photographed data on a recording medium such as a memory have become widespread. In addition to the digital camera, a portable terminal such as a mobile phone including a camera module as a medium for transmitting video information has been developed. It is becoming popular.
상기 휴대폰에 포함된 카메라 모듈은 외부로부터 빛을 받아 이를 이미지로 인식하는 이미지 센서가 포함되며, 소비자들의 다양한 욕구를 충족시키기 위해, 예를 들면 수동으로 피사체에 광을 제공하는 발광 모듈을 포함한다.The camera module included in the mobile phone includes an image sensor that receives light from the outside and recognizes it as an image, and includes a light emitting module that manually provides light to a subject, for example, to satisfy various needs of consumers.
상기 카메라 모듈에 사용되는 발광 모듈은 촬영환경에 따라 광을 선택적으로 제공한다. 따라서, 상기 발광 모듈은 카메라 모듈 주변에 위치하고, 외부로부터 노출된다.The light emitting module used in the camera module selectively provides light according to a shooting environment. Therefore, the light emitting module is positioned around the camera module and exposed from the outside.
종래에 따른 상기 카메라 모듈에 사용되는 발광 모듈은 일반적으로 청색 광을 발광하는 발광 다이오드 칩 상에 황색 형광체가 위치하므로 구동되지 않을 때 황색 형광체가 육안으로 보이는 외관품질 저하의 문제가 있었다.The light emitting module used in the camera module according to the related art generally has a problem of deterioration in appearance quality in which the yellow phosphor is visible when the yellow phosphor is not driven because the yellow phosphor is located on a light emitting diode chip that emits blue light.
더욱이 최근 들어 외관 품질뿐만 아니라 고휘도의 발광 모듈이 요구되고 있어 광 손실을 줄여 광 효율을 향상시키기 위한 연구가 활발히 진행되고 있다.In addition, in recent years, as well as the appearance quality as well as a high brightness light emitting module is required, research is being actively conducted to improve light efficiency by reducing light loss.
본 발명이 해결하고자 하는 과제는, 단선 등 외관 품질을 향상시킬 수 있을 뿐만 아니라 광 효율을 극대화할 수 있는 발광 모듈을 제공하는 것이다.An object of the present invention is to provide a light emitting module that can not only improve appearance quality such as disconnection but also maximize light efficiency.
본 발명의 실시예들에 따른 발광 모듈은 회로 기판; 상기 회로 기판상에 플립 본딩된 발광 다이오드 칩; 및 상기 회로 기판상에 위치하고, 상기 발광 다이오드 칩을 감싸는 하우징을 포함하고,상기 하우징은 리세스의 내벽면에 곡률 구조의 반사부를 가짐으로써, 광 효율을 향상시킬 수 있다.A light emitting module according to embodiments of the present invention includes a circuit board; A light emitting diode chip flip-bonded on the circuit board; And a housing disposed on the circuit board and surrounding the light emitting diode chip, wherein the housing has a reflecting portion having a curvature structure on an inner wall surface of the recess, thereby improving light efficiency.
상기 반사부는 상기 하우징의 높이에 따라 적어도 2 이상으로 분할된 곡률 구조의 반사영역들을 포함하여 광 효율을 보다 더 향상시킬 수 있다.The reflector may further improve light efficiency by including reflective regions having a curvature structure divided into at least two or more according to the height of the housing.
상기 반사부는 상기 회로기판을 기준으로 상기 발광 다이오드 칩의 높이와 동일하거나 더 높은 제1 높이를 기준으로 상기 제1 높이 이상으로 정의되는 제2 높이 내에 위치하는 제1 반사부 및 상기 제1 높이 내에 위치하는 제2 반사부를 포함하고, 상기 제1 및 제2 반사부 각각은 상기 하우징의 높이에 따라 적어도 2 이상으로 분할된 곡률 구조의 반사영역들을 포함한다.The reflector may be disposed within the first reflector and the first height positioned within a second height defined as the first height or more based on a first height equal to or higher than the height of the light emitting diode chip with respect to the circuit board. And a second reflecting portion positioned, each of the first and second reflecting portions including reflective regions having a curvature structure divided into at least two or more according to the height of the housing.
상기 제1 반사부의 반사영역들은 상기 하우징의 내벽면을 따라 수평하게 연속적으로 연장되는 발광 모듈.The light emitting module of the first reflecting unit extends horizontally and continuously along the inner wall surface of the housing.
상기 제2 반사부는 상기 발광 다이오드 칩의 측면 방향으로 돌출된 돌출부를 가지며, 상기 돌출부는 상기 발광 다이오드 칩의 측면을 따라 일정간격 이격되어 복수개로 형성된다.The second reflecting part has a protrusion protruding in a lateral direction of the light emitting diode chip, and the protruding portion is formed in plural numbers spaced apart along a side of the light emitting diode chip.
상기 돌출부는 상기 발광 다이오드 칩의 측면과 대면된다.The protrusion faces the side of the light emitting diode chip.
상기 반사부는 상기 제1 반사부와 상기 돌출부의 경계면에 위치한 단차부를 포함한다.The reflector includes a stepped portion positioned at an interface between the first reflector and the protrusion.
상기 하우징은 상부면 상에 상부방향으로 돌출된 복수의 돌기부 및 외측 하단부에 구비된 복수의 홈부를 포함한다.The housing includes a plurality of protrusions protruding upward in the upper direction and a plurality of grooves provided at the outer lower end thereof.
상기 복수의 홈부 중 적어도 하나에는 전자소자가 수용될 수 있다.An electronic device may be accommodated in at least one of the grooves.
상기 하우징의 상부면 상에 렌즈가 구비되고, 상기 렌즈는 상기 돌기부 내측에 위치한다.A lens is provided on an upper surface of the housing, and the lens is located inside the protrusion.
상기 하우징의 상부면 상에는 복수의 수용홈을 포함하고, 상기 하우징의 상부면 상에 렌즈가 구비되고, 상기 렌즈의 하부면에는 상기 수용홈에 수용되는 복수의 돌기부를 포함한다.The upper surface of the housing includes a plurality of receiving grooves, a lens is provided on the upper surface of the housing, the lower surface of the lens includes a plurality of projections accommodated in the receiving groove.
상기 발광 다이오드 칩은 반도체층 및 전극패드가 형성된 기판의 상부면과 하부면을 감싸는 파장변환층 및 상기 파장변환층을 덮는 TiO2 확산층을 포함한다.The light emitting diode chip includes a semiconductor layer, a wavelength conversion layer covering upper and lower surfaces of a substrate on which electrode pads are formed, and a TiO 2 diffusion layer covering the wavelength conversion layer.
상기 하우징은 상부면 상에 위치한 돌기부를 포함하고, 상기 돌기부는 상기 반사부와 인접하게 위치한다.The housing includes a protrusion located on an upper surface, and the protrusion is positioned adjacent to the reflecting part.
상기 하우징 상에 렌즈가 위치하고, 상기 렌즈는 하부면 가장자리에 단차구조를 갖고, 상기 단차구조 내측으로 프레넬 렌즈 구조를 갖는다.A lens is positioned on the housing, and the lens has a stepped structure at an edge of a lower surface thereof, and has a Fresnel lens structure inside the stepped structure.
상기 단차구조는 상기 하우징의 상부면 및 돌기부와 대면된다.The stepped structure faces the upper surface and the protrusion of the housing.
상기 회로기판은 상기 발광 다이오드 칩을 수용하는 리세스를 포함하고, 상기 리세스는 상기 반사부로부터 연장된다.The circuit board includes a recess for receiving the light emitting diode chip, the recess extending from the reflecting portion.
상기 반사부 상에 코팅된 Ag를 더 포함한다.Ag further coated on the reflector.
상기 하우징 상에 위치한 렌즈를 더 포함하고, 상기 렌즈와 상기 하우징을 고정하는 접착부재 또는 접착층을 더 포함하고, 상기 렌즈는 실리콘, 에폭시, 글라스, PMMA 중 적어도 하나를 포함하고, 상기 접착부재 또는 접착층은 에폭시를 포함한다.Further comprising a lens located on the housing, further comprising an adhesive member or adhesive layer for fixing the lens and the housing, the lens comprises at least one of silicon, epoxy, glass, PMMA, the adhesive member or adhesive layer Silver epoxy.
상기 회로기판은 리드 프레임 또는 도전성 패턴을 포함하고, PCB 기판 또는 세라믹 기판일 수 있다.The circuit board may include a lead frame or a conductive pattern, and may be a PCB board or a ceramic board.
본 발명의 실시예들에 따르면, 본 발명은 금속 재질로 이루어진 하우징의 리세스의 내측면을 따라 오목한 곡률 구조의 반사부가 구비되어 발광 다이오드 칩으로부터 출사된 광을 다양한 경로로 반사시킬 수 있다. 따라서, 본 발명의 발광 모듈은 내부에서 손실되는 광을 최소화함으로써, 광 효율을 극대화할 수 있는 장점을 가진다.According to embodiments of the present invention, the present invention is provided with a reflective portion having a concave curvature structure along an inner surface of a recess of a housing made of a metal material to reflect light emitted from the LED chip in various paths. Therefore, the light emitting module of the present invention has an advantage of maximizing light efficiency by minimizing light lost therein.
더욱이, 본 발명의 하우징은 리세스의 내측면 높이에 따라 분할된 곡률 구조의 복수의 반사영역에 의해 발광 다이오드 칩으로부터 발광된 모든 광을 다양한 방향으로 반사시켜 광 효율을 극대화할 수 있다.Furthermore, the housing of the present invention can maximize the light efficiency by reflecting all the light emitted from the LED chip in various directions by the plurality of reflection regions of the curvature structure divided according to the height of the inner surface of the recess.
더욱이, 본 발명의 발광 모듈은 파장변환층을 덮는 TiO2 확산층을 더 포함하여 황색 형광층이 포함된 파장변환층을 화이트색으로 커버함으로써, 외관품질을 향상시키는 장점을 가진다.Furthermore, the light emitting module of the present invention further includes a TiO 2 diffusion layer covering the wavelength conversion layer, thereby covering the wavelength conversion layer including the yellow fluorescent layer with a white color, thereby improving appearance quality.
또한, 본 발명은 단차구조를 갖는 렌즈에 의해 하우징과의 접촉면적이 넓어지므로 접착력을 향상시킬 수 있다. 또한, 본 발명은 상기 렌즈가 단차구조에 의해 하우징 상에서 정렬되므로 정렬 오차를 최소화할 수 있다.In addition, since the contact area with the housing is widened by the lens having the stepped structure, the present invention can improve the adhesive force. In addition, the present invention can minimize the alignment error because the lens is aligned on the housing by the stepped structure.
도 1은 본 발명의 제1 실시예에 따른 발광 모듈을 도시한 사시도이다.1 is a perspective view illustrating a light emitting module according to a first embodiment of the present invention.
도 2는 도 1의 발광 모듈을 도시한 평면도이다.FIG. 2 is a plan view illustrating the light emitting module of FIG. 1.
도 3은 도 1의 Ⅰ-Ⅰ'라인을 따라 절단한 발광 모듈을 도시한 단면도이다.3 is a cross-sectional view illustrating a light emitting module cut along the line II ′ of FIG. 1.
도 4의 (a)는 도 1의 발광 다이오드 칩의 하부를 도시한 평면도이고, 도 4의 (b)는 (a)의 A-A를 절단한 단면도이다.FIG. 4A is a plan view of the lower portion of the LED chip of FIG. 1, and FIG. 4B is a cross-sectional view taken along the line A-A of FIG.
도 5는 본 발명의 제2 실시예에 따른 발광 모듈을 도시한 평면도이다.5 is a plan view illustrating a light emitting module according to a second embodiment of the present invention.
도 6은 도 5의 Ⅱ-Ⅱ'라인을 따라 절단한 발광 모듈을 도시한 단면도이다.FIG. 6 is a cross-sectional view illustrating a light emitting module cut along a line II-II ′ of FIG. 5.
도 7은 본 발명의 제3 실시예에 따른 발광 모듈을 도시한 평면도이다.7 is a plan view illustrating a light emitting module according to a third embodiment of the present invention.
도 8은 도 7의 Ⅲ-Ⅲ'라인을 따라 절단한 발광 모듈을 도시한 단면도이다.FIG. 8 is a cross-sectional view illustrating a light emitting module cut along a line III-III ′ of FIG. 7.
도 9는 본 발명의 제4 실시예에 따른 발광 모듈을 도시한 사시도이다.9 is a perspective view illustrating a light emitting module according to a fourth embodiment of the present invention.
도 10은 본 발명의 제5 실시예에 따른 발광 모듈을 도시한 단면도이다.10 is a cross-sectional view illustrating a light emitting module according to a fifth embodiment of the present invention.
도 11은 본 발명의 제6 실시예에 따른 발광 모듈을 도시한 단면도이다.11 is a cross-sectional view illustrating a light emitting module according to a sixth embodiment of the present invention.
도 12는 본 발명의 제7 실시예에 따른 발광 모듈을 도시한 단면도이다.12 is a cross-sectional view illustrating a light emitting module according to a seventh embodiment of the present invention.
이하, 첨부한 도면들을 참조하여 본 발명의 실시예들을 상세히 설명한다. 다음에 소개되는 실시예들은 당업자에게 본 발명의 사상이 충분히 전달될 수 있도록 하기 위해 예로서 제공되는 것이다. 따라서, 본 발명은 이하 설명되는 실시예들에 한정되지 않고 다른 형태로 구체화될 수도 있다. 그리고, 도면들에 있어서, 구성요소의 폭, 길이, 두께 등은 편의를 위하여 과장되어 표현될 수도 있다. 명세서 전체에 걸쳐서 동일한 참조번호들은 동일한 구성요소들을 나타낸다.Hereinafter, with reference to the accompanying drawings will be described embodiments of the present invention; The following embodiments are provided as examples to ensure that the spirit of the present invention can be fully conveyed to those skilled in the art. Accordingly, the present invention is not limited to the embodiments described below and may be embodied in other forms. In the drawings, widths, lengths, thicknesses, and the like of components may be exaggerated for convenience. Like numbers refer to like elements throughout.
도 1은 본 발명의 제1 실시예에 따른 발광 모듈을 도시한 사시도이고, 도 2는 도 1의 발광 모듈을 도시한 평면도이고, 도 3은 도 1의 Ⅰ-Ⅰ'라인을 따라 절단한 발광 모듈을 도시한 단면도이다.1 is a perspective view illustrating a light emitting module according to a first embodiment of the present invention, FIG. 2 is a plan view illustrating the light emitting module of FIG. 1, and FIG. 3 is a light emission cut along the line II ′ of FIG. 1. A cross-sectional view of a module.
도 1 내지 도 3에 도시된 바와 같이, 본 발명의 제1 실시예에 따른 발광 모듈(100)은 회로기판(110), 하우징(120), 발광 다이오드 칩(10) 및 렌즈(150)를 포함한다.As shown in FIGS. 1 to 3, the light emitting module 100 according to the first embodiment of the present invention includes a circuit board 110, a housing 120, a light emitting diode chip 10, and a lens 150. do.
상기 회로기판(110)은 리드 프레임(미도시) 또는 도전성 패턴(미도시)을 포함한다. 상기 회로기판(110)은 PCB 기판 또는 세라믹 기판일 수 있다.The circuit board 110 may include a lead frame (not shown) or a conductive pattern (not shown). The circuit board 110 may be a PCB substrate or a ceramic substrate.
상기 하우징(120)은 발광 다이오드 칩(10)의 주변을 감싸고, 상기 회로기판(110) 상에 위치한다. 상기 하우징(120)은 금속 물질로 이루어지고, 솔더링 공정 또는 실리콘 수지를 이용하여 상기 회로기판(110) 상에 부착할 수 있다.The housing 120 surrounds the periphery of the light emitting diode chip 10 and is located on the circuit board 110. The housing 120 is made of a metal material, and may be attached onto the circuit board 110 using a soldering process or a silicone resin.
상기 하우징(120)은 중심부에 리세스를 가지며, 리세스의 내측면에 반사부(130)와, 상부면 상에 위치하는 복수의 돌기부(121)와, 외측 모서리에 구비된 복수의 홈부(122)를 포함한다.The housing 120 has a recess in a central portion thereof, a reflection portion 130 on an inner side surface of the recess, a plurality of protrusions 121 located on an upper surface thereof, and a plurality of groove portions 122 provided on an outer edge thereof. ).
상기 반사부(130)는 리세스의 내측면을 따라 끊어짐 없는 곡률 구조를 가진다.The reflector 130 has a seamless curvature structure along the inner surface of the recess.
상기 반사부(130)는 상기 발광 다이오드 칩(10)으로부터 출사된 광을 다양한 방향으로 반사시켜 발광 모듈(100)의 광 효율을 향상시키는 기능을 가진다. 상기 반사부(130)는 반사율이 높은 물질이 더 형성될 수 있다. 예컨대 상기 반사부(130)는 Ag가 코팅될 수 있다. 상기 Ag는 상기 하우징(120) 전체에 코팅될 수 있고, 상기 회로기판(110)상에 코팅될 수 있다.The reflector 130 has a function of improving light efficiency of the light emitting module 100 by reflecting light emitted from the light emitting diode chip 10 in various directions. The reflector 130 may further be formed of a material having a high reflectance. For example, the reflector 130 may be coated with Ag. The Ag may be coated on the entire housing 120, and may be coated on the circuit board 110.
상기 발광 다이오드 칩(10)으로부터 출사된 광은 상기 반사부(130)의 곡률 구조에 의해 반사되는 지점에 따라 다양한 방향으로 반사됨으로써, 상기 발광 다이오드 칩(10)의 측방향으로 출사되어 손실되는 광을 방지할 수 있다.The light emitted from the light emitting diode chip 10 is reflected in various directions according to the point reflected by the curvature structure of the reflecting unit 130, thereby the light emitted and lost in the lateral direction of the light emitting diode chip 10. Can be prevented.
상기 복수의 홈부(122)는 제너 다이오드(미도시)와 같이, 발광 모듈(100)에 포함될 수 있는 전자소자들이 실장되는 공간을 제공한다.The plurality of grooves 122 provide a space in which electronic devices that may be included in the light emitting module 100 are mounted, such as a zener diode (not shown).
상기 홈부(122)는 상기 하우징(120)의 외측 하부를 따라 일정 간격 이격된다. 보다 구체적으로 상기 홈부(122)는 상기 하우징(120)의 모서리 하단부에 위치한다.The grooves 122 are spaced apart from each other along the outer lower portion of the housing 120. More specifically, the groove 122 is located at the bottom edge of the housing 120.
본 발명에서는 상기 홈부(122)가 회로기판(110)의 일부가 노출되도록 상기 하우징(120)의 모서리 영역에 형성된 구조를 한정하여 설명하고 있지만, 이에 한정하지 않고, 상기 하우징(120)의 하단부를 따라 회로기판(110)을 노출하는 홈 구조를 포함할 수 있다.In the present invention, the groove 122 is limited to the structure formed in the corner region of the housing 120 so that a part of the circuit board 110 is exposed, but not limited thereto, and the lower end portion of the housing 120 is not limited thereto. Accordingly, the circuit board 110 may include a groove structure exposing the circuit board 110.
상기 복수의 홈부(122)는 상기 발광 다이오드 칩(10)이 위치하는 리세스로부터 분리되어 광 효율을 향상시키는 기능을 가진다. 구체적으로 일반적인 발광 모듈은 리세스에 발광 다이오드 칩과 전자소자들이 배치되어 발광 다이오드 칩으로부터 출사된 광을 흡수하거나 반사시켜 발광 모듈의 광 효율을 저하시키는 문제가 있었다. 본 발명에서는 상기 전자소자들이 리세스로부터 분리되어 회로기판(110) 상에 실장될 수 있도록 상기 홈부(122)가 구비되어 전자소자들의 광 흡수 및 반사에 의한 광 효율저하를 방지할 수 있다.The plurality of grooves 122 are separated from recesses in which the light emitting diode chip 10 is located, and have a function of improving light efficiency. Specifically, a light emitting module has a problem in that a light emitting diode chip and an electronic device are disposed in a recess to absorb or reflect light emitted from the light emitting diode chip, thereby reducing the light efficiency of the light emitting module. In the present invention, the groove 122 is provided to allow the electronic devices to be separated from the recess and to be mounted on the circuit board 110 to prevent the light efficiency of the electronic devices from being absorbed and reflected.
본 발명의 발광 모듈(100)은 상기 복수의 홈부(122) 중 어느 하나에 제너 다이오드(미도시)가 구비된다. 상기 제너 다이오드는 외부로부터의 정전기에 의한 발광 다이오드 칩(10)의 손상을 방지하기 위한 기능을 가진다. 즉, 상기 제너 다이오드는 안정적인 구동의 발광 모듈(100)을 구현하기 위한 기능을 가진다.The light emitting module 100 of the present invention is provided with a zener diode (not shown) in any one of the plurality of grooves 122. The zener diode has a function of preventing damage to the light emitting diode chip 10 by static electricity from the outside. That is, the zener diode has a function for implementing a stable driving light emitting module 100.
상기 돌기부(121)는 상기 렌즈(150)의 위치를 고정하는 얼라인 기능을 가진다. 상기 돌기부(121)는 상기 하우징(120)의 상부면으로부터 일정 간격 이격되며, 상기 하우징(121)의 상부면으로부터 상부방향으로 돌출될 수 있다.The protrusion 121 has an align function for fixing the position of the lens 150. The protrusion 121 may be spaced apart from the upper surface of the housing 120 by a predetermined interval and protrude upward from the upper surface of the housing 121.
상기 돌기부(121)의 내측면은 상기 렌즈(150)의 외측면과 대면될 수 있다.The inner side surface of the protrusion 121 may face the outer side surface of the lens 150.
상기 렌즈(150)는 상부면이 평면구조를 가지며, 하부면에 쐐기구조를 가진다. 여기서, 상기 렌즈(150)의 구조는 한정되지 않고, 다양하게 변경될 수 있다. 예컨대 상기 렌즈(150)은 프레넬 렌즈 구조일 수 있다. 상기 프레넬 렌즈는 다수의 패턴들을 갖고, 상기 다수의 패턴들은 상기 리세스의 형상과 대응될 수 있다. 예컨대 상기 다수의 패턴들은 원형 구조의 리세스와 대응되는 원형 구조일 수 있다. 한편, 상기 다수의 패턴들은 상기 리세스 형상과 상이한 형상일 수도 있다. 예켠대 상기 다수의 패턴들은 원형 구조의 리세스와 상이한 사각 구조일 수 있다.The lens 150 has a planar structure at an upper surface thereof and a wedge structure at a lower surface thereof. Here, the structure of the lens 150 is not limited, and may be variously changed. For example, the lens 150 may have a Fresnel lens structure. The Fresnel lens may have a plurality of patterns, and the plurality of patterns may correspond to the shape of the recess. For example, the plurality of patterns may be a circular structure corresponding to the recess of the circular structure. Meanwhile, the plurality of patterns may have a shape different from the recess shape. For example, the plurality of patterns may have a rectangular structure different from a recess of a circular structure.
상기 렌즈(150)는 상기 돌기부(121)에 의해 상기 하우징(120)의 상부면에 얼라인된다.The lens 150 is aligned with the upper surface of the housing 120 by the protrusion 121.
도면에는 도시되지 않았지만, 상기 렌즈(150)는 접착부재(미도시) 또는 점착물질(미도시) 등에 의해 상기 하우징(120)의 상부면 상에 결합될 수 있다. 상기 렌즈(150)는 특별히 한정되지 않고, 실리콘, 에폭시, 글라스 및 PMMA 등 일 수 있다. 또한, 상기 접착부재(미도시) 또는 점착물질(미도시)는 에폭시일 수 있다.Although not shown in the drawing, the lens 150 may be coupled on the upper surface of the housing 120 by an adhesive member (not shown) or an adhesive material (not shown). The lens 150 is not particularly limited and may be silicon, epoxy, glass, PMMA, or the like. In addition, the adhesive member (not shown) or the adhesive material (not shown) may be an epoxy.
본 발명의 상기 하우징(120)은 금속 재질로 이루어지고, 리세스의 내측면을 따라 오목한 곡률 구조의 반사부(130)가 구비되어 상기 발광 다이오드 칩(10)으로부터 출사된 광을 다양한 경로로 반사시킬 수 있다. 따라서, 본 발명의 발광 모듈(100)은 내부에서 손실되는 광을 최소화함으로써, 광 효율을 극대화할 수 있는 장점을 가진다.The housing 120 of the present invention is made of a metal material and is provided with a reflective portion 130 having a concave curvature structure along the inner surface of the recess to reflect the light emitted from the LED chip 10 in various paths. You can. Therefore, the light emitting module 100 of the present invention has an advantage of maximizing light efficiency by minimizing light lost therein.
상기 발광 다이오드 칩(10)은 도 4를 참조하여 상세히 설명하도록 한다.The light emitting diode chip 10 will be described in detail with reference to FIG. 4.
도 4의 (a)는 도 1의 발광 다이오드 칩의 하부를 도시한 평면도이고, 도 4의 (b)는 (a)의 A-A를 절단한 단면도이다.FIG. 4A is a plan view of the lower portion of the LED chip of FIG. 1, and FIG. 4B is a cross-sectional view taken along the line A-A of FIG.
도 3 및 4를 참조하면, 본 발명의 발광 다이오드 칩(10)은 본딩 와이어를 사용함이 없이 직접 회로 기판(110)상에 플립 본딩된다. 상기 발광 다이오드 칩은 상기 회로 기판(110)상에 본딩시 와이어를 사용하지 않기 때문에, 와이어를 보호하기 위한 몰딩부를 필요로 하지 않으며, 본딩 패드를 노출하기 위해 파장변환층(50)의 일부를 제거할 필요도 없다. 따라서, 상기 발광 다이오드 칩(10)을 채택함으로써 본딩 와이어를 사용하는 발광 다이오드 칩을 사용하는 것에 비해 색편차나 휘도 얼룩 현상을 제거하고, 모듈 제조 공정을 단순화할 수 있다.3 and 4, the light emitting diode chip 10 of the present invention is flip bonded onto the direct circuit board 110 without using a bonding wire. Since the LED chip does not use a wire when bonding on the circuit board 110, it does not require a molding part to protect the wire, and removes a part of the wavelength conversion layer 50 to expose the bonding pad. No need to do it. Therefore, by adopting the light emitting diode chip 10, color deviation and luminance unevenness can be eliminated, and a module manufacturing process can be simplified as compared with using a light emitting diode chip using a bonding wire.
상기 발광 다이오드 칩(10)은 질화갈륨 계열의 화합물 반도체로 형성된 플립칩형 반도체 칩으로 자외선 또는 청색 계열의 광을 방출할 수 있다.The light emitting diode chip 10 is a flip chip type semiconductor chip formed of a gallium nitride based compound semiconductor and may emit ultraviolet light or blue light.
상기 발광 다이오드 칩(10)은 파장변환층(50)을 포함한다.The light emitting diode chip 10 includes a wavelength conversion layer 50.
상기 파장변환층(50)은 발광 다이오드 칩(10)을 덮는다. 도시한 바와 같이, 컨포멀 코팅된 파장변환층(50), 예컨대 형광체층이 발광 다이오드 칩(10) 상에 형성될 수 있으며, 발광 다이오드 칩(10)에서 방출된 광을 파장변환할 수 있다. 파장변환층(50)은 발광 다이오드 칩(10)에 코팅되며, 발광 다이오드 칩(10)의 상부면 및 측면을 덮을 수 있다.The wavelength conversion layer 50 covers the light emitting diode chip 10. As shown, a conformal coated wavelength converting layer 50, such as a phosphor layer, may be formed on the light emitting diode chip 10, and may convert the light emitted from the light emitting diode chip 10 to wavelength convert. The wavelength conversion layer 50 is coated on the LED chip 10 and may cover the upper surface and the side surface of the LED chip 10.
본 발명의 파장변환층(50)은 예를 들면, 청색 광을 발광하는 발광 다이오드 칩(10) 상에 황색 형광층으로 구성된다.The wavelength conversion layer 50 of the present invention is composed of, for example, a yellow fluorescent layer on the light emitting diode chip 10 emitting blue light.
상기 발광 다이오드 칩(10)은 상기 파장변환층(50)을 덮는 TiO2 확산층(70)을 더 포함한다.The light emitting diode chip 10 further includes a TiO 2 diffusion layer 70 covering the wavelength conversion layer 50.
상기 TiO2 확산층(70)은 상기 파장변환층(50)의 상부면 및 측면을 모두 덮을 수 있다.The TiO 2 diffusion layer 70 may cover both the upper surface and the side surface of the wavelength conversion layer 50.
상기 TiO2 확산층(70)은 황색 형광층에 의해 황색을 가지는 파장변환층(50)을 덮어 외관상 화이트 색으로 변환함으로써, 외관 품질을 향상시키는 기능을 가진다.The TiO 2 diffusion layer 70 covers the wavelength conversion layer 50 having a yellow color by a yellow fluorescent layer and converts the appearance into a white color, thereby improving appearance quality.
본 실시예에 있어서, 컨포멀 코팅된 파장변환층(50) 및 상기 TiO2 확산층(70)은 발광 다이오드 칩(10) 제조시에 미리 형성되어 발광 다이오드 칩(10)과 함께 회로 기판(110) 상에 실장될 수 있다.In the present exemplary embodiment, the conformal coated wavelength conversion layer 50 and the TiO 2 diffusion layer 70 are formed in advance when the LED chip 10 is manufactured and are formed on the circuit board 110 together with the LED chip 10. Can be mounted on
상기 발광 다이오드 칩(10)에 대한 이해를 돕기 위해 그 제조 방법을 개략적으로 설명한다.In order to help the understanding of the light emitting diode chip 10 will be described schematically.
성장 기판(21) 상에 제1 도전형 반도체층(23)이 형성되고, 제1 도전형 반도체층(23) 상에 서로 이격된 복수의 메사들(M)이 형성된다. 복수의 메사들(M)은 각각 활성층(25) 및 제2 도전형 반도체층(27)을 포함한다. 활성층(25)이 제1 도전형 반도체층(23)과 제2 도전형 반도체층(27) 사이에 위치한다. 한편, 복수의 메사들(M) 상에는 각각 반사 전극들(30)이 위치한다.A first conductive semiconductor layer 23 is formed on the growth substrate 21, and a plurality of mesas M spaced apart from each other are formed on the first conductive semiconductor layer 23. The plurality of mesas M may include an active layer 25 and a second conductivity type semiconductor layer 27, respectively. The active layer 25 is positioned between the first conductive semiconductor layer 23 and the second conductive semiconductor layer 27. Meanwhile, the reflective electrodes 30 are positioned on the plurality of mesas M, respectively.
복수의 메사(M)들은 성장 기판(21) 상에 제1 도전형 반도체층(23), 활성층(25) 및 제2 도전형 반도체층(27)을 포함하는 에피층을 금속 유기화학 기상 성장법 등을 이용하여 성장시킨 후, 제1 도전형 반도체층(23)이 노출되도록 제2 도전형 반도체층(27) 및 활성층(25)을 패터닝함으로써 형성될 수 있다. 복수의 메사들(M)의 측면은 포토레지스트 리플로우와 같은 기술을 사용함으로써 경사지게 형성될 수 있다. 메사(M) 측면의 경사진 프로파일은 활성층(25)에서 생성된 광의 추출 효율을 향상시킨다. The plurality of mesas M may be formed on the growth substrate 21 by forming an epitaxial layer including the first conductive semiconductor layer 23, the active layer 25, and the second conductive semiconductor layer 27. After growing using the same, the second conductive semiconductor layer 27 and the active layer 25 may be formed by patterning the first conductive semiconductor layer 23 to expose the first conductive semiconductor layer 23. Sides of the plurality of mesas M may be formed to be inclined by using a technique such as photoresist reflow. The inclined profile of the mesa (M) side improves the extraction efficiency of the light generated in the active layer 25.
복수의 메사들(M)은 도시한 바와 같이 일측 방향으로 서로 평행하게 연장하는 기다란 형상을 가질 수 있다. 이러한 형상은 성장 기판(21) 상에서 복수의 칩 영역에 동일한 형상의 복수의 메사들(M)을 형성하는 것을 단순화시킨다.The plurality of mesas M may have an elongated shape extending in parallel to each other in one direction as shown. This shape simplifies forming a plurality of mesas M of the same shape in the plurality of chip regions on the growth substrate 21.
한편, 반사 전극들(30)은 복수의 메사(M)들이 형성된 후, 각 메사(M) 상에 형성될 수 있으나, 이에 한정되는 것은 아니며, 제2 도전형 반도체층(27)을 성장시키고 메사(M)들을 형성하기 전에 제2 도전형 반도체층(27) 상에 미리 형성될 수도 있다. 반사 전극(30)은 메사(M)의 상부면을 대부분 덮으며, 메사(M)의 평면 형상과 대체로 동일한 형상을 갖는다.Meanwhile, the reflective electrodes 30 may be formed on each mesa M after the plurality of mesas M are formed, but is not limited thereto. The second conductive semiconductor layer 27 may be grown and mesas. It may be formed in advance on the second conductivity-type semiconductor layer 27 before forming (M). The reflective electrode 30 covers most of the upper surface of the mesa M, and has a shape substantially the same as the planar shape of the mesa M. FIG.
반사전극들(30)은 반사층(28)을 포함하며, 나아가 장벽층(29)을 포함할 수 있다. 장벽층(29)은 반사층(28)의 상부면 및 측면을 덮을 수 있다.The reflective electrodes 30 may include a reflective layer 28 and may further include a barrier layer 29. The barrier layer 29 may cover the top and side surfaces of the reflective layer 28.
복수의 메사들(M)이 형성된 후, 제1 도전형 반도체층(23)의 가장자리 또한 식각될 수 있다. 이에 따라, 기판(21)의 상부면이 노출될 수 있다. 제1 도전형 반도체층(23)의 측면 또한 경사지게 형성될 수 있다.After the plurality of mesas M are formed, an edge of the first conductivity type semiconductor layer 23 may also be etched. Accordingly, the upper surface of the substrate 21 may be exposed. Side surfaces of the first conductivity-type semiconductor layer 23 may also be formed to be inclined.
상기 복수의 메사들(M) 및 제1 도전형 반도체층(23)을 덮는 하부 절연층(31)이 형성된다. 하부 절연층(31)은 특정 영역에서 제1 도전형 반도체층(23) 및 제2 도전형 반도체층(27)에 전기적 접속을 허용하기 위한 개구부들을 갖는다. 예컨대, 하부 절연층(31)은 제1 도전형 반도체층(23)을 노출시키는 개구부들과 반사전극들(30)을 노출시키는 개구부들을 가질 수 있다.A lower insulating layer 31 is formed to cover the plurality of mesas M and the first conductive semiconductor layer 23. The lower insulating layer 31 has openings to allow electrical connection to the first conductive semiconductor layer 23 and the second conductive semiconductor layer 27 in a specific region. For example, the lower insulating layer 31 may have openings exposing the first conductivity type semiconductor layer 23 and openings exposing the reflective electrodes 30.
상기 하부 절연층(31) 상에 전류 분산층(33)이 형성된다. 전류 분산층(33)은 복수의 메사들(M) 및 제1 도전형 반도체층(23)을 덮는다. 또한, 전류 분산층(33)은 각각의 메사(M) 상부 영역 내에 위치하고 반사 전극들을 노출시키는 개구부들을 갖는다. 전류 분산층(33)은 하부 절연층(31)의 개구부들을 통해 제1 도전형 반도체층(23)에 오믹콘택할 수 있다. 전류 분산층(33)은 하부 절연층(31)에 의해 복수의 메사들(M) 및 반사 전극들(30)로부터 절연된다.The current spreading layer 33 is formed on the lower insulating layer 31. The current spreading layer 33 covers the plurality of mesas M and the first conductive semiconductor layer 23. In addition, the current spreading layer 33 has openings located in the upper region of each mesa M to expose the reflective electrodes. The current spreading layer 33 may be in ohmic contact with the first conductive semiconductor layer 23 through the openings of the lower insulating layer 31. The current spreading layer 33 is insulated from the plurality of mesas M and the reflective electrodes 30 by the lower insulating layer 31.
상기 전류 분산층(33) 상에 상부 절연층(35)이 형성된다. 상부 절연층(35)은 전류 분산층(33)을 노출시키는 개구부와 함께, 반사 전극들(30)을 노출시키는 개구부들을 갖는다. An upper insulating layer 35 is formed on the current spreading layer 33. The upper insulating layer 35 has openings that expose the reflective electrodes 30, with openings that expose the current spreading layer 33.
상기 상부 절연층(35) 상에 제1 패드(37a) 및 제2 패드(37b)가 형성된다. 제1 패드(37a)는 상부 절연층(35)의 개구부를 통해 전류 분산층(33)에 접속하고, 제2 패드(37b)는 상부 절연층(35)의 개구부들을 통해 반사 전극들(30)에 접속한다. 제1 패드(37a) 및 제2 패드(37b)는 발광 다이오드를 서브마운트, 패키지 또는 인쇄회로보드 등에 실장하기 위해 범프를 접속하거나 SMT를 위한 패드로 사용될 수 있다.The first pad 37a and the second pad 37b are formed on the upper insulating layer 35. The first pad 37a is connected to the current spreading layer 33 through the opening of the upper insulating layer 35, and the second pad 37b is connected to the reflective electrodes 30 through the openings of the upper insulating layer 35. Connect to The first pad 37a and the second pad 37b may be connected to bumps or used as pads for SMT to mount the light emitting diode to a submount, package, or printed circuit board.
상기 발광 다이오드 칩(10)은 패키지 또는 인쇄회로보드와 접지되는 상기 제1 및 제2 패드(37a, 37b)의 일면을 제외한 영역을 모두 덮는 파장변환층(50)이 형성된다.The light emitting diode chip 10 includes a wavelength conversion layer 50 covering all of regions except for one surface of the first and second pads 37a and 37b which are grounded with a package or a printed circuit board.
또한, 상기 발광 다이오드 칩(10)은 기 파장변환층(50)을 덮는 TiO2 확산층(70)이 형성된다.In the light emitting diode chip 10, a TiO 2 diffusion layer 70 is formed to cover the wavelength conversion layer 50.
도 5는 본 발명의 제2 실시예에 따른 발광 모듈을 도시한 평면도이고, 도 6은 도 5의 Ⅱ-Ⅱ'라인을 따라 절단한 발광 모듈을 도시한 단면도이다.5 is a plan view illustrating a light emitting module according to a second exemplary embodiment of the present invention, and FIG. 6 is a cross-sectional view illustrating a light emitting module cut along a line II-II ′ of FIG. 5.
도 5 및 도 6에 도시된 바와 같이, 본 발명의 제2 실시예에 따른 발광 모듈(200)은 하우징(220)을 제외하고, 상기 제1 실시예에 따른 발광 모듈(도1의 100)과 동일하므로 동일한 부호를 병기하고 상세한 설명은 생략하기로 한다.As shown in FIGS. 5 and 6, the light emitting module 200 according to the second embodiment of the present invention may include the light emitting module 100 according to the first embodiment except for the housing 220. Since they are the same, the same reference numerals are used and detailed description thereof will be omitted.
상기 하우징(220)은 발광 다이오드 칩(10)의 주변을 감싸고, 상기 회로기판(110) 상에 위치한다. 상기 하우징(220)은 금속 물질로 이루어지고, 솔더링 공정 또는 실리콘 수지를 이용하여 상기 회로기판(110) 상에 부착할 수 있다.The housing 220 surrounds the periphery of the light emitting diode chip 10 and is located on the circuit board 110. The housing 220 is made of a metal material and may be attached onto the circuit board 110 using a soldering process or a silicone resin.
상기 하우징(220)은 중심부에 리세스를 가지며, 리세스의 내측면에 반사부(230)와, 상부면 상에 위치하는 복수의 돌기부(221)와, 외측 모서리에 구비된 복수의 홈부(222)를 포함한다.The housing 220 has a recess in a central portion thereof, a reflecting portion 230 on an inner side surface of the recess, a plurality of protrusions 221 located on an upper surface thereof, and a plurality of groove portions 222 disposed on an outer edge thereof. ).
상기 반사부(230)는 리세스의 내측면을 따라 끊어짐 없는 곡률 구조를 가진다. 상기 반사부(230)는 반사율이 높은 물질이 더 형성될 수 있다. 예컨대 상기 반사부(230)는 Ag가 코팅될 수 있다. 상기 Ag는 상기 하우징(220) 전체에 코팅될 수 있고, 상기 회로기판(110)상에 코팅될 수 있다. 상기 반사부(230)는 상기 회로기판(110)을 기준으로 상부방향으로 분할된 제1 내지 제4 반사영역(231 내지 234)을 가진다.The reflector 230 has a seamless curvature structure along the inner surface of the recess. The reflector 230 may be further formed of a material having a high reflectance. For example, the reflector 230 may be coated with Ag. The Ag may be coated on the entire housing 220, and may be coated on the circuit board 110. The reflector 230 has first to fourth reflective regions 231 to 234 divided in an upward direction based on the circuit board 110.
상기 제1 내지 제4 반사영역(231 내지 234)은 하우징(230)의 높이(h1 내지 h4)에 따라 분할될 수 있다.The first to fourth reflective regions 231 to 234 may be divided according to the heights h1 to h4 of the housing 230.
상기 제1 내지 제4 반사영역(231 내지 234) 각각은 수평방향으로 끊어짐 없는 곡률 구조를 가진다. 보다 구체적으로 상기 제1 내지 제4 반사영역(231 내지 234)은 발광 다이오드 칩(10)을 감싸는 곡률 구조를 가진다.Each of the first to fourth reflective regions 231 to 234 has a curvature structure that is seamless in the horizontal direction. More specifically, the first to fourth reflective regions 231 to 234 have a curvature structure surrounding the light emitting diode chip 10.
상기 발광 다이오드 칩(10)으로부터 출사된 광은 하우징(220)의 높이(h1 내지 h4)에 따라 분할된 제1 내지 제4 반사영역(231 내지 234)의 곡률 구조에 의해 다양한 방향으로 반사된다.Light emitted from the light emitting diode chip 10 is reflected in various directions by the curvature structure of the first to fourth reflective regions 231 to 234 divided according to the heights h1 to h4 of the housing 220.
본 발명의 제2 실시예에 따른 반사부(230)는 하우징(220)의 높이(h1 내지 h4)에 따라 분할된 복수의 제1 내지 제4 반사영역(231 내지 234)을 포함하여 상기 발광 다이오드 칩(10)으로부터 출사된 광을 다양한 방향으로 반사시켜 발광 모듈(200)의 광 효율을 향상시킬 수 있다.The reflector 230 according to the second exemplary embodiment of the present invention includes a plurality of first to fourth reflective regions 231 to 234 divided according to the heights h1 to h4 of the housing 220. The light emitted from the chip 10 may be reflected in various directions to improve light efficiency of the light emitting module 200.
상기 발광 다이오드 칩(10)으로부터 출사된 광은 상기 반사부(230)의 곡률 구조에 의해 반사되는 지점에 따라 다양한 방향으로 반사됨으로써, 상기 발광 다이오드 칩(10)의 측방향으로 출사되어 손실되는 광을 방지할 수 있다.The light emitted from the light emitting diode chip 10 is reflected in various directions according to the point reflected by the curvature structure of the reflecting unit 230, thereby the light emitted and lost in the lateral direction of the light emitting diode chip 10. Can be prevented.
상기 복수의 홈부(222) 및 돌기부(221)는 본 발명의 제1 실시예에 따른 발광 모듈(도1의 100)과 유사하므로 상세한 설명은 생략하기로 한다.Since the plurality of grooves 222 and the protrusions 221 are similar to the light emitting module 100 of FIG. 1 according to the first embodiment of the present invention, a detailed description thereof will be omitted.
상기 반사부(230)는 본 발명의 제2 실시예에서 상기 하우징(220)의 높이(h1 내지 h4)에 따라 4개로 분할된 제1 내지 제4 반사영역(231 내지 234)의 곡률 구조를 한정하여 설명하고 있지만, 이에 한정하지 않고, 상기 반사부(230)는 상기 하우징(220)의 높이에 따라 적어도 2개 이상으로 분할된 구조를 모두 포함할 수 있다.The reflector 230 defines a curvature structure of the first to fourth reflective regions 231 to 234 divided into four according to the height h1 to h4 of the housing 220 in the second embodiment of the present invention. Although not limited thereto, the reflector 230 may include all of the structures divided into at least two or more according to the height of the housing 220.
이상에서 설명한 본 발명의 제2 실시예에 따른 발광 모듈(200)은 금속 재질의 하우징(220)의 리세스 내측면에 상기 하우징(220)의 높이(h1 내지 h4)에 따라 복수개로 분할된 곡률 구조의 제1 내지 제4 반사영역(231 내지 234)을 포함하는 반사부(230)가 구비되어 상기 발광 다이오드 칩(10)으로부터 출사된 광을 다양한 경로로 반사시킬 수 있다. 따라서, 본 발명의 발광 모듈(200)은 내부에서 손실되는 광을 최소화함으로써, 광 효율을 극대화할 수 있는 장점을 가진다.The light emitting module 200 according to the second embodiment of the present invention described above has a plurality of curvatures divided in the recess inner surface of the metal housing 220 according to the height h1 to h4 of the housing 220. A reflector 230 including first to fourth reflective regions 231 to 234 having a structure may be provided to reflect light emitted from the LED chip 10 through various paths. Therefore, the light emitting module 200 of the present invention has an advantage of maximizing light efficiency by minimizing light lost therein.
도 7은 본 발명의 제3 실시예에 따른 발광 모듈을 도시한 평면도이고, 도 8은 도 7의 Ⅲ-Ⅲ'라인을 따라 절단한 발광 모듈을 도시한 단면도이다.FIG. 7 is a plan view illustrating a light emitting module according to a third embodiment of the present invention, and FIG. 8 is a cross-sectional view illustrating a light emitting module cut along a line III-III ′ of FIG. 7.
도 7 및 도 8에 도시된 바와 같이, 본 발명의 제3 실시예에 따른 발광 모듈(300)은 하우징(320)을 제외하고, 상기 제1 실시예에 따른 발광 모듈(도1의 100)과 동일하므로 동일한 부호를 병기하고 상세한 설명은 생략하기로 한다.As shown in FIG. 7 and FIG. 8, the light emitting module 300 according to the third embodiment of the present invention is the light emitting module (100 of FIG. 1) according to the first embodiment except for the housing 320. Since they are the same, the same reference numerals are used and detailed description thereof will be omitted.
상기 하우징(320)은 발광 다이오드 칩(10)의 주변을 감싸고, 상기 회로기판(110) 상에 위치한다. 상기 하우징(320)은 금속 물질로 이루어지고, 솔더링 공정 또는 실리콘 수지를 이용하여 상기 회로기판(110) 상에 부착할 수 있다.The housing 320 surrounds the periphery of the light emitting diode chip 10 and is located on the circuit board 110. The housing 320 is made of a metal material, and may be attached onto the circuit board 110 using a soldering process or a silicone resin.
상기 하우징(320)은 중심부에 리세스를 가지며, 리세스의 내측면에 제1 및 제2 반사부(330, 340)와, 상부면 상에 위치하는 복수의 돌기부(321)와, 외측 모서리에 구비된 복수의 홈부(322)를 포함한다.The housing 320 has a recess in a central portion thereof, and includes first and second reflectors 330 and 340 on the inner side of the recess, a plurality of protrusions 321 located on the upper surface, and an outer edge thereof. It includes a plurality of grooves 322 provided.
상기 제2 반사부(340)는 회로기판(110)을 기준으로 제1 높이(h1) 내에 위치하고, 제1 반사부(330)는 상기 제1 높이(h1)를 제외한 하우징(320)의 전체 높이로 정의되는 제5 높이(h5) 내에 위치한다. 상기 제1 및 제2 반사부(330, 340)는 반사율이 높은 물질이 더 형성될 수 있다. 예컨대 상기 제1 및 제2 반사부(330, 340)는 Ag가 코팅될 수 있다. 상기 Ag는 상기 하우징(320) 전체에 코팅될 수 있고, 상기 회로기판(110)상에 코팅될 수 있다.The second reflector 340 is positioned within the first height h1 based on the circuit board 110, and the first reflector 330 is the overall height of the housing 320 except for the first height h1. It is located within the fifth height h5 defined by. The first and second reflectors 330 and 340 may further be formed of a material having high reflectance. For example, the first and second reflectors 330 and 340 may be coated with Ag. The Ag may be coated on the entire housing 320 and may be coated on the circuit board 110.
상기 제1 반사부(330)는 리세스의 내측면을 따라 끊어짐 없는 곡률 구조를 가진다.The first reflector 330 has a seamless curvature structure along the inner surface of the recess.
상기 제1 반사부(330)는 상기 회로기판(110)을 기준으로 상기 제1 높이(h1) 이상에서 상부방향으로 분할된 제1 내지 제4 반사영역(331 내지 334)을 가진다.The first reflector 330 has first to fourth reflective regions 331 to 334 divided in an upper direction above the first height h1 based on the circuit board 110.
상기 제1 내지 제4 반사영역(331 내지 334)은 상기 하우징(320)의 높이에 따라 분할될 수 있다. 즉, 상기 제1 내지 제4 반사영역(331 내지 334)은 상기 하우징(320)의 제1 높이(h1) 이상에서 분할될 수 있다.The first to fourth reflective regions 331 to 334 may be divided according to the height of the housing 320. That is, the first to fourth reflective regions 331 to 334 may be divided above the first height h1 of the housing 320.
상기 제1 내지 제4 반사영역(331 내지 334) 각각은 수평방향으로 끊어짐 없는 곡률 구조를 가진다. 보다 구체적으로 상기 제1 내지 제4 반사영역(331 내지 334)은 발광 다이오드 칩(10)을 감싸는 곡률 구조를 가진다.Each of the first to fourth reflective regions 331 to 334 has a curvature structure that is seamless in the horizontal direction. More specifically, the first to fourth reflective regions 331 to 334 have a curvature structure surrounding the light emitting diode chip 10.
상기 발광 다이오드 칩(10)으로부터 출사된 광은 하우징(320)의 제1 높이(h1)를 제외한 제5 높이(h5) 내에서 분할된 제1 내지 제4 반사영역(331 내지 334)의 곡률 구조에 의해 다양한 방향으로 반사된다.The light emitted from the light emitting diode chip 10 has a curvature structure of the first to fourth reflective regions 331 to 334 divided within the fifth height h5 except for the first height h1 of the housing 320. Are reflected in various directions.
상기 제2 반사부(340)는 제1 높이(h1) 내에서 수평방향으로 일정 간격 이격되어 형성될 수 있다.The second reflector 340 may be formed to be spaced apart at a predetermined interval in the horizontal direction within the first height h1.
상기 제2 반사부(340)는 상기 발광 다이오드 칩(10)의 양측면과 상기 하우징(320)의 간격 차를 보상하는 기능을 가진다. 보다 구체적으로 상기 발광 다이오드 칩(10)의 측면과 상기 하우징(320)의 내측면 하단부는 상기 발광 다이오드 칩(10)의 구조에 따라 서로 다른 간격을 가진다. 예를 들면, 상기 발광 다이오드 칩(10)의 모서리 영역과 상기 하우징(320)의 내측면 간격은 상기 발광 다이오드 칩(10)의 측면 영역과 상기 하우징(320)의 내측면 간격보다 좁다. 따라서, 상기 하우징(320)으로부터 반사되는 광은 상기 발광 다이오드 칩(10)의 모서리 영역과 측면 영역에서 미세하게 불균일할 수 있다. 본 발명의 제2 반사부(340)는 상기 발광 다이오드 칩(10)의 측면과 하우징(320)의 내측면 하단부 사이의 간격 차에 의한 불균일한 광을 보상하는 기능을 가진다.The second reflector 340 has a function of compensating for a gap between both side surfaces of the light emitting diode chip 10 and the housing 320. More specifically, the side surface of the light emitting diode chip 10 and the lower end of the inner surface of the housing 320 have different intervals according to the structure of the light emitting diode chip 10. For example, an interval between an edge of the LED chip 10 and an inner surface of the housing 320 is smaller than an interval between a side region of the LED chip 10 and an inner surface of the housing 320. Therefore, the light reflected from the housing 320 may be minutely uneven in the corner region and the side region of the light emitting diode chip 10. The second reflecting unit 340 of the present invention has a function of compensating for non-uniform light due to the difference in distance between the side surface of the LED chip 10 and the lower end of the inner surface of the housing 320.
상기 제2 반사부(340)는 리세스의 내측면을 따라 상기 발광 다이오드 칩(10)의 4개의 측면들과 대응되도록 복수개로 형성된다.The second reflector 340 is formed in plural along the inner surface of the recess so as to correspond to four side surfaces of the LED chip 10.
상기 제2 반사부(340)는 도 7의 평면도를 기준으로 상기 발광 다이오드 칩(10)의 4개의 측면과 대칭되는 직선 구조를 가진다.The second reflector 340 has a linear structure symmetrical with four sides of the light emitting diode chip 10 based on the plan view of FIG. 7.
상기 제2 반사부(340)는 상기 하우징(320)의 상기 제1 높이(h1) 내에서 상기 발광 다이오드 칩(10)의 측면과 대면되어 상기 발광 다이오드 칩(10)의 내측면 방향으로 돌출된 돌출부(341)과, 상기 돌출부(341) 형성에 의한 단차부(343)을 포함한다.The second reflector 340 faces the side surface of the light emitting diode chip 10 within the first height h1 of the housing 320 to protrude toward the inner surface of the light emitting diode chip 10. A protrusion 341 and a stepped portion 343 formed by the protrusion 341 are included.
상기 돌출부(341)는 상기 하우징(320)의 상부방향으로 분할된 제5 및 제6 반사영역(341a, 341b)을 포함한다.The protrusion 341 includes fifth and sixth reflective regions 341a and 341b divided in an upper direction of the housing 320.
상기 제5 및 제6 반사영역(341a, 341b)은 상기 제1 높이(h1) 내에서 상기 하우징(320)의 높이에 따라 분할될 수 있다.The fifth and sixth reflective regions 341a and 341b may be divided according to the height of the housing 320 within the first height h1.
상기 제5 및 제6 반사영역(341a, 341b)은 상기 제2 반사부(340) 내에서 분할된 곡률 구조를 가진다.The fifth and sixth reflecting regions 341a and 341b have a curvature structure divided in the second reflecting portion 340.
상기 발광 다이오드 칩(10)의 외측방향으로부터 출사된 광은 하우징(320)의 제1 높이(h1) 내에서 분할된 제5 및 제6 반사영역(341a, 341b)의 곡률 구조에 의해 다양한 방향으로 반사된다.The light emitted from the outside of the light emitting diode chip 10 is diverted in various directions by the curvature structures of the fifth and sixth reflective regions 341a and 341b divided within the first height h1 of the housing 320. Reflected.
상기 제1 높이(h1)는 상기 발광 다이오드 칩(10)보다 높거나 동일한 높이를 가진다.The first height h1 has a height higher than or equal to that of the LED chip 10.
본 발명의 제2 반사부(340)는 2개로 분할된 제5 및 제6 반사영역(341a, 341b)의 곡률 구조를 한정하여 설명하고 있지만, 이에 한정하지 않고, 적어도 3 이상으로 분할된 곡률 구조를 포함할 수 있다.The second reflector 340 of the present invention has been described with a limited curvature structure of the fifth and sixth reflective regions 341a and 341b divided into two, but is not limited thereto, and the curvature structure divided into at least three or more. It may include.
상기 단차부(343)는 상기 돌출부(341)과 제1 반사부(330)의 경계영역에 형성될 수 있다.The step part 343 may be formed at a boundary area between the protrusion part 341 and the first reflecting part 330.
상기 복수의 홈부(322) 및 돌기부(321)는 본 발명의 제1 실시예에 따른 발광 모듈(도1의 100)과 유사하므로 상세한 설명은 생략하기로 한다.Since the plurality of grooves 322 and the protrusions 321 are similar to the light emitting module 100 of FIG. 1 according to the first embodiment of the present invention, a detailed description thereof will be omitted.
본 발명의 제3 실시예에 따른 제1 및 제2 반사부(330, 340)는 하우징(320)의 높이에 따라 분할된 복수의 제1 내지 제6 반사영역(331 내지 334, 341a, 341b)을 포함하여 상기 발광 다이오드 칩(10)으로부터 출사된 모든 광에 대해 다양한 방향으로 반사시켜 발광 모듈(300)의 광 효율을 향상시킬 수 있다.The first and second reflective parts 330 and 340 according to the third exemplary embodiment of the present invention may include a plurality of first to sixth reflective areas 331 to 334, 341a and 341b divided according to the height of the housing 320. Including the light reflected from the light emitting diode chip 10 in a variety of directions for all the light emitted from the light emitting module 300 can be improved.
더욱이 본 발명의 제3 실시예에 따른 발광 모듈(300)은 상기 발광 다이오드 칩(10)의 측면으로부터 출사된 광을 상기 제2 반사부(340)에 의해 반사시킴으로써, 상기 발광 다이오드 칩(10)과 하우징(320)의 내측면 하단부 사이의 간격 차이에 의한 미세한 반사 광 차이를 보상하여 광 손실을 방지함과 동시에 전체적으로 균일한 광을 구현할 수 있는 장점을 가진다.In addition, the light emitting module 300 according to the third embodiment of the present invention reflects the light emitted from the side surface of the light emitting diode chip 10 by the second reflecting unit 340, thereby providing the light emitting diode chip 10. Compensating for the minute difference of the reflected light due to the difference between the gap between the lower end of the inner surface of the housing 320 to prevent light loss and at the same time have an overall uniform light.
도 9는 본 발명의 제4 실시예에 따른 발광 모듈을 도시한 사시도이다.9 is a perspective view illustrating a light emitting module according to a fourth embodiment of the present invention.
도 9에 도시된 바와 같이, 본 발명의 제4 실시예에 따른 발광 모듈(400)은 회로기판(110), 하우징(420), 발광 다이오드 칩(미도시) 및 렌즈(450)를 포함한다.As shown in FIG. 9, the light emitting module 400 according to the fourth embodiment of the present invention includes a circuit board 110, a housing 420, a light emitting diode chip (not shown), and a lens 450.
상기 하우징(420)은 발광 다이오드 칩(미도시)의 주변을 감싸고, 상기 회로기판(110) 상에 위치한다. 상기 하우징(420)은 금속 물질로 이루어지고, 솔더링 공정 또는 실리콘 수지를 이용하여 상기 회로기판(110) 상에 부착할 수 있다.The housing 420 surrounds a periphery of a light emitting diode chip (not shown) and is located on the circuit board 110. The housing 420 is made of a metal material and may be attached onto the circuit board 110 using a soldering process or a silicone resin.
상기 하우징(420)은 중심부에 리세스를 가지며, 리세스의 내측면에 반사부(미도시)와, 상부면 상에 위치하는 복수의 수용홈(421)과, 외측 모서리에 구비된 복수의 홈부(422)를 포함한다.The housing 420 has a recess in a central portion thereof, a reflection portion (not shown) on an inner side surface of the recess, a plurality of receiving grooves 421 located on an upper surface thereof, and a plurality of groove portions provided on an outer edge thereof. 422.
상기 복수의 수용홈(421)은 하우징(420)의 상부면 모서리 영역 주변에 형성될 수 있다. 상기 복수의 수용홈(421)은 상기 렌즈(450)의 하부면상에 형성된 복수의 돌기부(451)를 수용한다.The plurality of receiving grooves 421 may be formed around the upper edge region of the housing 420. The plurality of receiving grooves 421 accommodate a plurality of protrusions 451 formed on the lower surface of the lens 450.
여기서, 상기 돌기부(451)는 상기 렌즈(450)의 하부면 모서리 영역 주변에 형성될 수 있고, 상기 렌즈(450)의 하부방향으로 돌출된 구조를 가진다. 상기 돌기부(451) 및 상기 수용홈(421)은 동일한 형상으로 형성될 수 있다.Here, the protrusion 451 may be formed around a lower edge region of the lens 450, and may have a structure protruding downward of the lens 450. The protrusion 451 and the receiving groove 421 may be formed in the same shape.
상기 렌즈(450)는 상기 복수의 돌기부(451)가 상기 하우징(420)의 복수의 수용홈(421)에 수용되어 상기 하우징(420)의 상부면 상에 얼라인된다.The lens 450 has the plurality of protrusions 451 accommodated in the plurality of accommodation grooves 421 of the housing 420 and is aligned on the upper surface of the housing 420.
도면에는 도시되지 않았지만, 상기 렌즈(450)는 접착부재(미도시) 또는 점착물질(미도시) 등에 의해 상기 하우징(420)의 상부면 상에 결합될 수 있다.Although not shown in the drawing, the lens 450 may be coupled on the upper surface of the housing 420 by an adhesive member (not shown) or an adhesive material (not shown).
상기 복수의 홈부(422)는 제너 다이오드(미도시)와 같이, 발광 모듈(400)에 포함될 수 있는 전자소자들이 실장되는 공간을 제공한다.The plurality of grooves 422 provide a space in which electronic devices that may be included in the light emitting module 400 are mounted, such as a zener diode (not shown).
상기 홈부(422)는 상기 하우징(420)의 외측 하부를 따라 일정 간격 이격된다. 보다 구체적으로 상기 홈부(422)는 상기 하우징(420)의 모서리 하단부에 위치한다.The groove 422 is spaced apart from each other along an outer lower portion of the housing 420. More specifically, the groove 422 is located at the bottom edge of the housing 420.
본 발명에서는 상기 홈부(422)가 회로기판(110)의 일부가 노출되도록 상기 하우징(420)의 모서리 영역에 형성된 구조를 한정하여 설명하고 있지만, 이에 한정하지 않고, 상기 하우징(420)의 하단부를 따라 회로기판(110)을 노출하는 홈 구조를 포함할 수 있다.In the present invention, the groove 422 is limited to the structure formed in the corner region of the housing 420 so that a part of the circuit board 110 is exposed, but not limited to this, the lower end of the housing 420 Accordingly, the circuit board 110 may include a groove structure exposing the circuit board 110.
본 발명의 발광 모듈(400)은 상기 복수의 홈부(422) 중 어느 하나에 제너 다이오드(미도시)가 구비된다.The light emitting module 400 of the present invention is provided with a zener diode (not shown) in any one of the plurality of grooves 422.
본 발명의 제4 실시예에 따른 발광 모듈(400)의 하우징(420)의 내측면 구조는 본 발명의 제1 내지 제3 실시예에 따른 하우징의 내측면 구조 중 어느 하나일 수 있다.The inner surface structure of the housing 420 of the light emitting module 400 according to the fourth embodiment of the present invention may be any one of the inner surface structures of the housings according to the first to third embodiments of the present invention.
도 10은 본 발명의 제5 실시예에 따른 발광 모듈을 도시한 단면도이다.10 is a cross-sectional view illustrating a light emitting module according to a fifth embodiment of the present invention.
도 10에 도시된 바와 같이, 본 발명의 제5 실시예에 따른 발광 모듈(500)은 하우징(520) 및 렌즈(550)를 제외한 모든 구성이 본 발명의 제1 실시예에 따른 발광 모듈(도3의 100)과 동일하므로 동일한 부호를 병기하고, 상세한 설명은 생략하기로 한다.As shown in FIG. 10, the light emitting module 500 according to the fifth embodiment of the present invention has all configurations except the housing 520 and the lens 550. 3 and the same as 100), the same reference numerals are written together, and detailed description thereof will be omitted.
상기 하우징(520)은 회로기판(110) 상에 위치하고, 상기 회로기판(110) 상에 실장된 발광 다이오드 칩(10)을 감싼다. 여기서, 상기 회로기판(110)은 리드 프레임(미도시) 또는 도전성 패턴(미도시)를 포함할 수 있고, PCB 기판 또는 세라믹 기판일 수 있다. 상기 하우징(520)은 중심부에 리세스를 갖고, 상부면 상에 위치한 돌기부(521)와, 내측면에 위치한 반사부(530)를 포함한다.The housing 520 is disposed on the circuit board 110 and surrounds the LED chip 10 mounted on the circuit board 110. Here, the circuit board 110 may include a lead frame (not shown) or a conductive pattern (not shown), and may be a PCB substrate or a ceramic substrate. The housing 520 has a recess in a central portion thereof, and includes a protrusion 521 disposed on an upper surface thereof, and a reflecting portion 530 positioned on an inner surface thereof.
상기 반사부(530)는 상기 발광 다이오드 칩(10)으로부터 출사된 광을 다양한 방향으로 반사시켜 발광 모듈(500)의 광 효율을 향상시키는 기능을 갖는다. 상기 반사부(530)는 리세스의 내측면을 따라 끊어짐 없는 곡률 구조를 갖는다. 여기서, 상기 반사부(530)는 하나의 곡률 구조를 한정하여 설명하지만, 이에 한정하지 않고, 상하방향으로 분할된 복수의 반사영역을 포함할 수 있다. 상기 반사부(530)는 반사율이 높은 물질이 더 형성될 수 있다. 예컨대 상기 반사부(530)는 Ag가 코팅될 수 있다. 상기 Ag는 상기 하우징(520) 전체에 코팅될 수 있고, 상기 회로기판(110)상에 코팅될 수 있다.The reflector 530 has a function of improving light efficiency of the light emitting module 500 by reflecting light emitted from the LED chip 10 in various directions. The reflector 530 has a seamless curvature structure along the inner surface of the recess. Here, the reflective part 530 is limited to one curvature structure, but the present invention is not limited thereto, and the reflective part 530 may include a plurality of reflective areas divided in the vertical direction. The reflector 530 may be further formed of a material having a high reflectance. For example, the reflector 530 may be coated with Ag. The Ag may be coated on the entire housing 520, and may be coated on the circuit board 110.
상기 돌기부(521)는 상기 반사부(530)와 인접한 영역에위치한다. 상기 돌기부(521)는 상부면 상에서 리세스의 가장자리를 따라 링 타입으로 돌출된다. 상기 돌기부(521)는 링 타입으로 한정하고 있지만, 이에 한정하지 않고, 리세스의 형상에 따라 다각형 등 다양하게 변경될 수 있다.The protrusion 521 is positioned in an area adjacent to the reflector 530. The protrusion 521 protrudes in a ring type along the edge of the recess on the upper surface. The protrusion 521 is limited to a ring type, but is not limited thereto, and may be variously changed according to the shape of the recess.
상기 상부면 및 돌기부(521)는 상기 렌즈(550)와 접촉된다.The upper surface and the protrusion 521 are in contact with the lens 550.
상기 렌즈(550)는 평평한 평면구조의 상부면 및 가장자리에 단차구조(551)를 갖는 하부면을 포함한다. 상기 렌즈(550)는 상기 리세스의 형상에 따라 변경될 수 있다. 상기 단차구조(551)는 상기 하우징의 상부면 및 돌기부(521)와 대면된다. 상기 단차구조(551)는 상기 하우징(520)의 상부면 및 돌기부(521)와 면 접촉될 수 있다. 상기 렌즈(550)는 특별히 한정되지 않고, 실리콘, 에폭시, 글라스, PMMA 등 일 수 있다. 여기서, 상기 단차구조(551)와 상기 하우징(520)의 상부면 및 돌출부(521) 사이에는 접착층(미도시)이 위치한다. 상기 접착층(미도시)은 에폭시일 수 있다. 상기 렌즈(550)의 하부면은 상기 리세스의 형상에 따라 변경될 수 있다. 상기 렌즈(550)의 하부면은 프레넬 렌즈 타입일 수 있다. 상기 프레넬 렌즈는 다수의 패턴들을 갖고, 상기 다수의 패턴들은 상기 리세스의 형상과 대응될 수 있다. 예컨대 상기 다수의 패턴들은 원형 구조의 리세스와 대응되는 원형 구조일 수 있다. 한편, 상기 다수의 패턴들은 상기 리세스 형상과 상이한 형상일 수도 있다. 예켠대 상기 다수의 패턴들은 원형 구조의 리세스와 상이한 사각 구조일 수 있다.The lens 550 includes a top surface of a flat planar structure and a bottom surface having a stepped structure 551 at an edge thereof. The lens 550 may be changed according to the shape of the recess. The stepped structure 551 faces the upper surface and the protrusion 521 of the housing. The stepped structure 551 may be in surface contact with the top surface and the protrusion 521 of the housing 520. The lens 550 is not particularly limited, and may be silicon, epoxy, glass, PMMA, or the like. Here, an adhesive layer (not shown) is positioned between the stepped structure 551 and the upper surface of the housing 520 and the protrusion 521. The adhesive layer (not shown) may be epoxy. The lower surface of the lens 550 may be changed according to the shape of the recess. The lower surface of the lens 550 may be a Fresnel lens type. The Fresnel lens may have a plurality of patterns, and the plurality of patterns may correspond to the shape of the recess. For example, the plurality of patterns may be a circular structure corresponding to the recess of the circular structure. Meanwhile, the plurality of patterns may have a shape different from the recess shape. For example, the plurality of patterns may have a rectangular structure different from a recess of a circular structure.
본 발명은 리세스의 내측면을 따라 곡률 구조를 갖는 반사부(530)를 포함하여 발광 다이오드 칩(10)으로부터 출사된 광을 다양한 경로로 반사시킬 수 있다. 따라서, 본 발명의 발광 모듈(500)은 내부에서 손실되는 광을 최소화함으로써, 광 효율을 극대화할 수 있는 장점을 갖는다.The present invention may include a reflector 530 having a curvature structure along the inner surface of the recess to reflect light emitted from the LED chip 10 through various paths. Therefore, the light emitting module 500 of the present invention has an advantage of maximizing light efficiency by minimizing light lost therein.
또한, 본 발명은 상기 단차구조(551)를 갖는 렌즈(550)에 의해 상기 하우징(520)과의 접촉면적이 넓어지므로 접착력을 향상시킬 수 있다. 또한, 본 발명은 상기 렌즈(550)가 단차구조(551)에 의해 하우징(520) 상에서 정렬되므로 정렬오차를 최소화할 수 있다.In addition, according to the present invention, the contact area with the housing 520 is widened by the lens 550 having the stepped structure 551, thereby improving adhesion. In addition, the present invention can minimize the alignment error because the lens 550 is aligned on the housing 520 by the stepped structure 551.
도 11은 본 발명의 제6 실시예에 따른 발광 모듈을 도시한 단면도이다.11 is a cross-sectional view illustrating a light emitting module according to a sixth embodiment of the present invention.
도 11에 도시된 바와 같이, 본 발명의 제6 실시예에 따른 발광 모듈(600)은 회로기판(610)을 제외한 모든 구성이 본 발명의 제5 실시예에 따른 발광 모듈(도10의 500)과 동일하므로 동일한 부호를 병기하고, 상세한 설명은 생략하기로 한다.As shown in FIG. 11, in the light emitting module 600 according to the sixth embodiment of the present invention, all configurations except for the circuit board 610 are the light emitting module (500 of FIG. Since the same reference numerals denote the same reference numerals, detailed description thereof will be omitted.
상기 회로기판(610)은 상부면 상에 발광 다이오드 칩(10)을 수용하는 오목부(611)를 갖는다. 상기 오목부(611)는 경사진 내측면을 포함하고, 상기 경사면은 상기 발광 다이오드 칩(10)으로부터 출사된 광을 반사시킨다. 상기 오목부(611)의 내측면은 곡률 구조의 반사부(530)로부터 연장될 수 있다. 상기 회로기판(610)은 리드 프레임(미도시) 또는 도전성 패턴(미도시)를 포함할 수 있고, PCB 기판 또는 세라믹 기판일 수 있다. 본 발명에서는 상기 오목부(611) 및 반사부(530)가 서로 연장된 구조를 한정하여 설명하고 있지만, 상기 오목부(611)는 상기 반사부(530)의 내측방향으로 일정간격 이격될 수도 있다.The circuit board 610 has a concave portion 611 that accommodates the light emitting diode chip 10 on an upper surface thereof. The concave portion 611 includes an inclined inner surface, and the inclined surface reflects light emitted from the light emitting diode chip 10. The inner side surface of the concave portion 611 may extend from the reflecting portion 530 of the curvature structure. The circuit board 610 may include a lead frame (not shown) or a conductive pattern (not shown), and may be a PCB substrate or a ceramic substrate. In the present invention, the concave portion 611 and the reflecting portion 530 are limited to the structure in which they are described. However, the concave portion 611 may be spaced at a predetermined interval in the inward direction of the reflecting portion 530. .
본 발명은 리세스의 내측면을 따라 곡률 구조의 반사부(530)를 갖는 하우징(520) 및 발광 다이오드 칩(100)을 수용하는 오목부(611)를 갖는 회로기판(610)을 포함하여 발광 다이오드 칩(10)으로부터 출사된 광을 다양한 경로로 반사시킬 수 있다. 따라서, 본 발명의 발광 모듈(600)은 내부에서 손실되는 광을 최소화함으로써, 광 효율을 극대화할 수 있는 장점을 갖는다.The present invention includes a housing 520 having a curvature reflecting portion 530 along the inner surface of the recess and a circuit board 610 having a recess 611 for receiving the light emitting diode chip 100. Light emitted from the diode chip 10 may be reflected by various paths. Therefore, the light emitting module 600 of the present invention has an advantage of maximizing light efficiency by minimizing light lost therein.
또한, 본 발명은 단차구조(551)를 갖는 렌즈(550)에 의해 하우징(520)과의 접촉면적이 넓어지므로 접착력을 향상시킬 수 있다. 또한, 본 발명은 상기 렌즈(550)가 단차구조(551)에 의해 하우징(520) 상에서 정렬되므로 정렬오차를 최소화할 수 있다.In addition, according to the present invention, since the contact area with the housing 520 is widened by the lens 550 having the stepped structure 551, the adhesive force may be improved. In addition, the present invention can minimize the alignment error because the lens 550 is aligned on the housing 520 by the stepped structure 551.
도 12는 본 발명의 제7 실시예에 따른 발광 모듈을 도시한 단면도이다.12 is a cross-sectional view illustrating a light emitting module according to a seventh embodiment of the present invention.
도 12에 도시된 바와 같이, 본 발명의 제7 실시예에 따른 발광 모듈(700)은 회로기판(110), 발광 다이오드 패키지(710) 및 하우징(620)을 포함한다.As shown in FIG. 12, the light emitting module 700 according to the seventh embodiment of the present invention includes a circuit board 110, a light emitting diode package 710, and a housing 620.
상기 발광 다이오드 패키지(710)는 기판 상에 실장된 발광 다이오드 칩 및 렌즈를 포함한다. 상기 발광 다이오드 패키지(710)는 상부 발광 타입일 수 있다. 상기 발광 다이오드 칩은 특별히 한정되지 않고, 수직 타입 또는 수평 타입 등 일 수 있다. 상기 발광 다이오드 패키지(710)는 상기 회로기판(110) 상에 실장된다.The LED package 710 includes a LED chip and a lens mounted on a substrate. The light emitting diode package 710 may be a top light emitting type. The light emitting diode chip is not particularly limited and may be a vertical type or a horizontal type. The light emitting diode package 710 is mounted on the circuit board 110.
상기 하우징(620)은 상기 회로기판(110) 상에 위치하고, 중심부에 상기 발광 다이오드 패키지(710)를 수용할 수 있는 리세스(625)를 갖는다. 여기서, 상기 회로기판(110)은 리드 프레임(미도시) 또는 도전성 패턴(미도시)를 포함할 수 있고, PCB 기판 또는 세라믹 기판일 수 있다. 상기 하우징(620)은 내측면에 반사부(630)를 포함한다. 상기 반사부(630)는 상기 발광 다이오드 패키지(710)으로부터 출사된 광을 다양한 방향으로 반사시켜 발광 모듈(700)의 광 효율을 향상시키는 기능을 갖는다. 상기 반사부(630)는 리세스(625)의 내측면을 따라 끊어짐 없는 곡률 구조를 갖는다. 여기서, 상기 반사부(630)는 하나의 곡률 구조를 한정하여 설명하지만, 이에 한정하지 않고, 상하방향으로 복수의 반사영역으로 분할될 수 있다. 상기 반사부(630)는 반사율이 높은 물질이 더 형성될 수 있다. 예컨대 상기 반사부(630)는 Ag가 코팅될 수 있다. 상기 Ag는 상기 하우징(620) 전체에 코팅될 수 있고, 상기 회로기판(110)상에 코팅될 수 있다.The housing 620 is disposed on the circuit board 110 and has a recess 625 in the center thereof to accommodate the LED package 710. Here, the circuit board 110 may include a lead frame (not shown) or a conductive pattern (not shown), and may be a PCB substrate or a ceramic substrate. The housing 620 includes a reflector 630 on an inner side surface. The reflector 630 has a function of improving light efficiency of the light emitting module 700 by reflecting light emitted from the light emitting diode package 710 in various directions. The reflector 630 has a seamless curvature structure along the inner surface of the recess 625. Here, the reflective part 630 is described with a limited curvature structure, but is not limited thereto and may be divided into a plurality of reflective areas in the vertical direction. The reflector 630 may further be formed of a material having a high reflectance. For example, the reflector 630 may be coated with Ag. The Ag may be coated on the entire housing 620 and may be coated on the circuit board 110.
본 발명은 리세스의 내측면을 따라 곡률 구조의 반사부(630)를 갖는 하우징(620)을 포함하여 발광 다이오드 패키지(710)으로부터 출사된 광을 다양한 경로로 반사시킬 수 있다. 따라서, 본 발명의 발광 모듈(700)은 내부에서 손실되는 광을 최소화함으로써, 광 효율을 극대화할 수 있는 장점을 갖는다.이상에서 다양한 실시예들에 대해 설명하였지만, 본 발명은 특정 실시예에 한정되는 것은 아니다. 또한 특정 실시예에서 설명한 구성요소는 본원 발명의 사상을 벗어나지 않는 한 다른 실시예에서 동일하거나 유사하게 적용될 수 있다.The present invention may include a housing 620 having a reflective portion 630 having a curvature structure along an inner surface of the recess to reflect light emitted from the LED package 710 in various paths. Therefore, the light emitting module 700 of the present invention has an advantage of maximizing light efficiency by minimizing light lost therein. Although various embodiments have been described above, the present invention is limited to a specific embodiment. It doesn't happen. In addition, the components described in a specific embodiment may be applied to the same or similar in other embodiments without departing from the spirit of the present invention.

Claims (20)

  1. 회로 기판;A circuit board;
    상기 회로 기판 상에 플립 본딩된 발광 다이오드 칩; 및A light emitting diode chip flip-bonded on the circuit board; And
    상기 회로 기판상에 위치하고, 상기 발광 다이오드 칩을 감싸는 하우징을 포함하고,A housing disposed on the circuit board, the housing surrounding the light emitting diode chip;
    상기 하우징은 내벽면에 곡률 구조의 반사부를 가지는 발광 모듈.The housing has a light emitting module having a reflective portion of the curvature structure on the inner wall surface.
  2. 청구항 1에 있어서,The method according to claim 1,
    상기 반사부는 상기 하우징의 높이에 따라 적어도 2 이상으로 분할된 곡률 구조의 반사영역들을 포함하는 발광 모듈.The reflector comprises a reflective region of curvature structure divided into at least two according to the height of the housing.
  3. 청구항 1에 있어서,The method according to claim 1,
    상기 반사부는 상기 회로기판을 기준으로 상기 발광 다이오드 칩의 높이와 동일하거나 더 높은 제1 높이를 기준으로 상기 제1 높이 이상으로 정의되는 제2 높이 내에 위치하는 제1 반사부 및The reflector may include a first reflector positioned within a second height defined as the first height or more based on a first height equal to or higher than the height of the LED chip based on the circuit board;
    상기 제1 높이 내에 위치하는 제2 반사부를 포함하고,A second reflector positioned within the first height,
    상기 제1 및 제2 반사부 각각은 상기 하우징의 높이에 따라 적어도 2 이상으로 분할된 곡률 구조의 반사영역들을 포함하는 발광 모듈.Each of the first and second reflecting units includes reflective regions having a curvature structure divided into at least two according to the height of the housing.
  4. 청구항 3에 있어서, 상기 제1 반사부의 반사영역들은 상기 하우징의 내벽면을 따라 수평하게 연속적으로 연장되는 발광 모듈.The light emitting module of claim 3, wherein the reflective areas of the first reflecting part extend horizontally and continuously along an inner wall of the housing.
  5. 청구항 3에 있어서, 상기 제2 반사부는 상기 발광 다이오드 칩의 측면 방향으로 돌출된 돌출부를 가지며, 상기 돌출부는 상기 발광 다이오드 칩의 측면을 따라 일정간격 이격되어 복수개로 형성된 발광 모듈.The light emitting module of claim 3, wherein the second reflecting part has a protrusion protruding in a lateral direction of the light emitting diode chip, and the protrusion is formed in plural numbers spaced apart along a side of the light emitting diode chip.
  6. 청구항 5에 있어서, 상기 돌출부는 상기 발광 다이오드 칩의 측면과 대면되는 발광 모듈.The light emitting module of claim 5, wherein the protrusion faces a side surface of the light emitting diode chip.
  7. 청구항 5에 있어서, 상기 제2 반사부는 상기 제1 반사부 및 상기 돌출부의 경계면에 위치한 단차부를 포함하는 발광 모듈.The light emitting module of claim 5, wherein the second reflector comprises a stepped portion disposed at an interface between the first reflector and the protrusion.
  8. 청구항 1에 있어서, 상기 하우징은 상부면 상에 상부방향으로 돌출된 복수의 돌기부 및 The method of claim 1, wherein the housing is a plurality of protrusions protruding upward in the upper direction and
    외측 하단부에 구비된 복수의 홈부를 포함하는 발광 모듈.Light emitting module comprising a plurality of grooves provided on the outer lower end.
  9. 청구항 8에 있어서, 상기 복수의 홈부 중 적어도 하나에는 전자소자가 수용되는 발광 모듈.The light emitting module of claim 8, wherein an electronic device is accommodated in at least one of the plurality of grooves.
  10. 청구항 8에 있어서, 상기 하우징의 상부면 상에 렌즈가 구비되고, 상기 렌즈는 상기 돌기부 내측에 위치하는 발광 모듈.The light emitting module of claim 8, wherein a lens is provided on an upper surface of the housing, and the lens is positioned inside the protrusion.
  11. 청구항 1에 있어서, 상기 하우징의 상부면 상에는 복수의 수용홈을 포함하는 발광 모듈.The light emitting module of claim 1, further comprising a plurality of receiving grooves on an upper surface of the housing.
  12. 청구항 10에 있어서, 상기 하우징의 상부면 상에 렌즈가 구비되고, 상기 렌즈의 하부면에는 상기 수용홈에 수용되는 복수의 돌기부를 포함하는 발광 모듈.The light emitting module of claim 10, wherein a lens is provided on an upper surface of the housing, and a lower surface of the lens includes a plurality of protrusions accommodated in the receiving groove.
  13. 청구항 1에 있어서, 상기 발광 다이오드 칩은 반도체층 및 전극패드가 형성된 기판의 상부면과 하부면을 감싸는 파장변환층 및 상기 파장변환층을 덮는 확산층을 포함하는 발광 모듈.The light emitting module of claim 1, wherein the light emitting diode chip includes a semiconductor layer, a wavelength conversion layer covering upper and lower surfaces of a substrate on which electrode pads are formed, and a diffusion layer covering the wavelength conversion layer.
  14. 청구항 1에 있어서, 상기 하우징은,The method according to claim 1, wherein the housing,
    상부면; 및Upper surface; And
    상기 상부면 상에 위치한 돌기부를 포함하고,A protrusion located on the upper surface,
    상기 돌기부는 상기 반사부와 인접하게 위치한 발광 모듈.The projection module is located adjacent to the reflector.
  15. 청구항 14에 있어서,The method according to claim 14,
    상기 하우징 상에 렌즈가 위치하고, 상기 렌즈는 하부면 가장자리에 단차구조를 갖고, 상기 단차구조의 내측으로 프레넬 렌즈 구조를 갖는 발광 모듈.The lens is positioned on the housing, the lens has a stepped structure on the edge of the lower surface, the light emitting module having a Fresnel lens structure inside the stepped structure.
  16. 청구항 15에 있어서, 상기 단차구조는 상기 하우징의 상부면 및 돌기부와 대면되는 발광 모듈.The light emitting module of claim 15, wherein the stepped structure faces an upper surface and a protrusion of the housing.
  17. 청구항 1에 있어서, 상기 회로기판은 상기 발광 다이오드 칩을 수용하는 리세스를 포함하고, 상기 리세스 내측면은 상기 반사부로부터 연장되는 발광 모듈.The light emitting module of claim 1, wherein the circuit board includes a recess for receiving the light emitting diode chip, and the inner surface of the recess extends from the reflecting portion.
  18. 청구항 1에 있어서, 상기 반사부 상에 코팅된 Ag를 더 포함하는 발광 모듈.The light emitting module of claim 1, further comprising Ag coated on the reflector.
  19. 청구항 1에 있어서, 상기 하우징 상에 위치한 렌즈를 더 포함하고,The method of claim 1, further comprising a lens located on the housing,
    상기 렌즈와 상기 하우징을 고정하는 접착부재 또는 접착층을 더 포함하고, 상기 렌즈는 실리콘, 에폭시, 글라스, PMMA 중 적어도 하나를 포함하고, 상기 접착부재 또는 접착층은 에폭시를 포함하는 발광 모듈.And a bonding member or adhesive layer fixing the lens and the housing, wherein the lens comprises at least one of silicon, epoxy, glass, and PMMA, and the bonding member or adhesive layer comprises epoxy.
  20. 청구항 1에 있어서,The method according to claim 1,
    상기 회로기판은 리드 프레임 또는 도전성 패턴을 포함하고,The circuit board includes a lead frame or a conductive pattern,
    PCB 기판 또는 세라믹 기판인 발광 모듈.Light emitting module which is a PCB substrate or a ceramic substrate.
PCT/KR2014/001701 2013-02-28 2014-02-28 Light-emitting module WO2014133367A1 (en)

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