WO2014130230A1 - Tunable gas delivery assembly with internal diffuser and angular injection - Google Patents

Tunable gas delivery assembly with internal diffuser and angular injection Download PDF

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Publication number
WO2014130230A1
WO2014130230A1 PCT/US2014/014455 US2014014455W WO2014130230A1 WO 2014130230 A1 WO2014130230 A1 WO 2014130230A1 US 2014014455 W US2014014455 W US 2014014455W WO 2014130230 A1 WO2014130230 A1 WO 2014130230A1
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WO
WIPO (PCT)
Prior art keywords
nozzle
trench
disposed
delivery assembly
gas delivery
Prior art date
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Ceased
Application number
PCT/US2014/014455
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French (fr)
Inventor
Vladimir KNYAZIK
Kyle TANTIWONG
Samer Banna
Waheb Bishara
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Applied Materials Inc
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Applied Materials Inc
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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • H01J37/32449Gas control, e.g. control of the gas flow
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26DRYING
    • F26BDRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B21/00Arrangements for supplying or controlling air or other gases for drying solid materials or objects
    • F26B21/50Ducting arrangements from the source of air or other gases to the materials or objects being dried
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means

Definitions

  • inductively coupled plasma reactors are used in various processes.
  • Conventional inductively coupled plasma reactors generally include a vacuum chamber having a side wail and a ceiling, a workpiece support pedestal within the chamber and generally facing the ceiling, a gas inlet capable of supplying one or more processing gases into the chamber, and one or more coil antennas overlying the ceiling.
  • a gas inlet generally includes one or more gas lines coupled to a gas delivery assembly with a plurality of outlets.
  • Embodiments of the present invention relate to an apparatus for providing processing gases to a process chamber with improved uniformity.
  • One embodiment of the present invention provides a gas delivery assembly.
  • the gas delivery assembly includes a nozzle and one or more gas diffusers disposed in the nozzle.
  • the nozzle has a cylindrical body with a side wall and a top surface.
  • a plurality of injection passages are formed inside the nozzle to deliver processing gases into the process chamber via a plurality of outlets disposed in the side wail.
  • the injection passages are configured to direct process gases out of each outlet disposed in the side wall in a direction which is not radially aligned with a centerline of the hub.
  • a gas delivery assembly in one embodiment, includes a nozzle having a cylindrical body with a side wail and a top surface, a first trench disposed in the top surface, and a first diffuser disposed in the first trench. A first plenum is formed between the first diffuser and a bottom of the first trench.
  • the gas delivery assembly further includes a plurality of outer injection passages formed within the nozzle. Each of the outer injection passages extends from the bottom of the first trench to a first location inside the nozzle that is a first distance away from the top surface.
  • the gas delivery assembly further includes a connecting passage connecting each of the outer injection passages to a first outlet disposed in the side wall of the nozzle. The connecting passage is substantially parallel to a bottom of the nozzle and is not radially aligned with a centerline of the nozzle.
  • a substrate processing system in another embodiment, includes a chamber body defining a processing volume and a chamber lid having a central opening.
  • the substrate processing system further includes a substrate support disposed in the processing volume and a gas delivery assembly having a hub and a nozzle disposed over the chamber lid. A portion of the nozzle is positioned in the processing volume through the central opening in the chamber lid.
  • the nozzle includes a cylindrical body having a side wall, a top surface having one or more trenches, and a gas diffuser disposed inside each trench. D Icr Ulfc3 ⁇ 4U IIr I lunj Ur I is U WsS ⁇ US?
  • Figure 1 schematically illustrates a sectional view of a plasma processing system according to one embodiment of the invention.
  • Figure 2 is an enlarged sectional view of a gas delivery assembly according to one embodiment of the invention.
  • Figure 3B is a partial sectional view of the nozzle of Figure 3A.
  • Figure 3C is a top view of the nozzle of Figure 3A.
  • Figure 3D is a sectional view of the nozzle of Figure 3A taken through section line 3C depicted in Figure 2.
  • Embodiments of the present invention generally relate to an apparatus for providing processing gases to a process chamber with improved uniformity. More particularly, embodiments of the present invention provide a gas delivery assembly including a hub for receiving one or more gases from a source, a nozzle for injecting the one or more gases to a process chamber through a plurality of injection passages and one or more gas diffusers disposed in a top surface of the nozzle. The gas diffusers create a small pressure head when the nozzle is coupled to the hub, thus the processing gases received from a single source can have uniform flow through multiple injection points.
  • FIG. 1 schematically illustrates a sectional view of a substrate processing system 100, for processing a variety of substrates and accommodating a variety of substrate sizes, for example, a substrate diameter of up to about 300mm or 450 mm.
  • the substrate processing system 100 includes a chamber body 102 having a processing volume 104 defined therein.
  • the chamber housing assembly 102 may include sidewalls 108 and a chamber lid 108.
  • a substrate support assembly 1 10 may be disposed in the processing volume 104.
  • the substrate support assembly 1 10 supports a substrate 1 12 during processing.
  • a slit valve opening 144 may be formed in the chamber wall 108 to allow a robot (not shown) to move substrates in and out of the processing volume 104.
  • a slit valve door 148 may be used to selectively close the slit valve opening 144.
  • a plurality of lift pins 148 may be selectively extended from the substrate support assembly 1 10 to facilitate substrate transfer between the robot and the substrate support assembly 1 10.
  • the substrate support assembly 1 10 may include an electrostatic chuck 1 13 for securing the substrate 1 12 thereon during processing.
  • a gas delivery assembly 120 is disposed over the chamber lid 108 through the opening 1 16.
  • the gas delivery assembly 120 may be connected to a gas source 124 through one or more gas input lines 122 to supply one or more processing gases to the processing volume 104.
  • the one or more processing gases may exit the processing volume 104 via a pumping channel 138 formed in a liner 140 disposed inside the processing volume 104.
  • the pumping channel 138 may be in fluid communication with a vacuum pump 142.
  • the vacuum pump 142 may be connected to the processing volume 104 directly.
  • the substrate processing system 100 may include an antenna assembly 130 disposed over the chamber lid 108.
  • the antenna assembly 130 is configured to generate plasma in the processing volume 104.
  • the antenna assembly 130 may include one or more solenoidal interleaved coil antennas disposed coaxial with the centerline 1 18 of the substrate processing system 100.
  • a heater assembly 132 may be disposed over the chamber lid 108. The heater assembly 132 may be secured to the chamber lid 108 by clamping members 134, 136.
  • the gas delivery assembly 120 is configured to supply one or more processing gases to the processing volume 104 in a uniform manner.
  • Figure 2 is an enlarged sectional view of the gas delivery assembly 120 disposed on the chamber lid 108 with the damping members 134, 136 and the heater assembly 132 removed.
  • the centerline 1 18 of the processing system 100 is also the centerline of the gas delivery assembly 120.
  • the gas delivery assembly 120 includes a hub 210, a nozzle 230 and one or more gas diffusers 250 disposed in the nozzle 230.
  • the nozzle 230 When assembled, the nozzle 230 is disposed through the opening 1 16 of the chamber lid 108.
  • the nozzle 230 may have a flange 232 for mounting the nozzle 230 on the chamber lid 108. A portion of the nozzle 230 protrudes into the processing volume 104 through the opening 1 16 to deliver processing gas to the processing volume 104.
  • the hub 210 is positioned on the chamber lid 108 covering the opening 1 16 and the nozzle 230.
  • the hub 210 is disposed over the nozzle 230 and provides an interface between the gas input lines 122 and the nozzle 230.
  • the hub 210 has a body shaped to enclose the opening 1 18 and interface with the nozzle 230.
  • the body has an outer surface facing the exterior environment and a bottom surface 213 for contacting with the nozzle
  • the gas injection assembly 120 includes an observation window 270.
  • the body of the hub 210 may have a through hole 222 and the nozzle 230 may be a hollow cylinder having a central opening 240.
  • the observation window 270 may be disposed between the hub 210 and the nozzle 230.
  • the nozzle 230 may have a recess 242 for supporting the observation window 270.
  • the hub 210 may have a gland 272 formed to receive a seal 274 to provide a vacuum seal between the hub 210 and the observation window 270.
  • the observation window 270 is fabricated from quartz.
  • the nozzle 230 has a cylindrical body with a side wall 228 and a top surface 231 for contacting with the bottom surface 213 of the hub 210.
  • the nozzle 230 has a plurality of inner injection passages 238 and a plurality of outer injection passages 236 for injecting one or more processing gases from the outer and inner channels 206, 208 of the hub 210 to the processing volume 104.
  • the outer injection passages 236 are arranged radially outward of the inner injection passages 238.
  • the outer and inner injection passages 238, 238 may have outlets at various positions to achieve gas injection.
  • the outer injection passages 236 have outlets 308 disposed in the side wail 228 and are connected to the outlets 306 by connecting passages 330.
  • the inner injection passages 238 have outlets 350 disposed in a bottom surface 235 of the nozzle 230 and directed downward from the nozzle 230.
  • the outer and inner injection passages 236, 238 are evenly distributed in azimutha! orientation (e.g., in an evenly distributed polar array).
  • the gas diffusers 250a, 250b are disposed inside the outer and inner trenches 302, 304, respectively.
  • the gas diffusers 250a, 250b are spaced from bottoms 352, 354 of the outer and inner trenches 302, 304, thus, creating plenums 358, 358 between the gas diffusers 250a, 250b and bottoms 352, 354 of the outer and inner trenches 302, 304 so that the processing gases may be evenly distributed into the injection passages 238, 238.
  • the gas diffusers 250a, 250b may be any suitable gas permeable material or structure.
  • the gas diffusers 250a, 250b have a plurality of holes 308.
  • the gas diffusers 250a, 250b may be made of alumina or the same material as the nozzle 230.
  • the nozzle 230 and the gas diffusers 250a, 250b are made of ceramic material.
  • the area of one of the plurality of holes 308 of the gas diffusers 250a, 250b may be smaller than the surface area of one of the inlets 310, 320. in one embodiment, the total area of the holes 308 of the diffuser 250a equals the total surface area of the inlets 320, and the total area of the holes 308 of the diffuser 250b equals the total surface area of the inlets 310.
  • the gas diffusers 250a, 250b create a small pressure head when the nozzle 230 is coupled to the hub 210, thus the processing gases received from a single gas source 124 can have uniform flow through multiple injection points.
  • Figure 3D is a sectional view of the nozzle 230 without the gas diffusers 250.
  • the outer injection passages 236 extends from the bottom of the outer trench 302 to a distance inside the nozzle 230 from the top surface 231 , and the outlets 308 of the outer injection passages 238 are disposed in the side wall 228.
  • each outlet 306 and the corresponding outer injection passage 236 are connected by a connecting passage 330.
  • the connecting passage 330 is not perpendicular to a tangent 340 of the side wall 228 at the outlet 308 (e.g., the angle "A" in Figure 3D does not equal to 90 degrees).
  • the connecting passages 330 are not radially aligned with the centerline 1 18 of the chamber body 102, which is also the centerline of the hub 210, nozzle 230, and gas diffusers 250a, 250b.
  • the angle "A" ranges from about 15 degrees to about 80 degrees.
  • the processing gases exiting the outlet 306 are directed in the same direction defined by the connecting passage 330. If the angle "A" is 90 degrees, then the processing gases coming out of the outlet that is facing the vacuum pump 142 may travel at a faster speed compare to the processing gases coming out of all other outlets. By changing the angle "A" to an angle other than 90 degrees, the processing gases are coming out of each outlet at substantially the same speed, thus creating a more uniform gas flow inside the process chamber.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

Embodiments of the present invention relate to an apparatus for providing processing gases to a process chamber with improved uniformity. One embodiment of the present invention provides a gas delivery assembly. The gas delivery assembly includes a hub, a nozzle, and one or more gas diffusers disposed in the nozzle. The nozzle has a cylindrical body with a side wall and a top surface. A plurality of injection passages are formed inside the nozzle to deliver processing gases into the process chamber via a plurality of outlets disposed in the side wall. The injection passages are configured to direct process gases out of each outlet disposed in the side wall in a direction which is not radially aligned with a centerline of the hub.

Description

TUNABLE GAS DELIVERY ASSEMBLY WITH INTERNAL DIFFUSER AND
ANGULAR INJECTION
BACKGROUND
Field
[0001] Embodimenis of the present invention generally relate to a substrate processing system. More particularly, embodiments of the present invention relate to an apparatus for providing processing gases to a process chamber with improved uniformity.
Description of the Related Art
[Θ0Θ2] During manufacturing of microelectronic devices, inductively coupled plasma reactors are used in various processes. Conventional inductively coupled plasma reactors generally include a vacuum chamber having a side wail and a ceiling, a workpiece support pedestal within the chamber and generally facing the ceiling, a gas inlet capable of supplying one or more processing gases into the chamber, and one or more coil antennas overlying the ceiling. A gas inlet generally includes one or more gas lines coupled to a gas delivery assembly with a plurality of outlets.
[0003] The gas delivery assembly generally includes a hub, a nozzle, and outlets disposed in the side wail of the nozzle. Typically there is a vacuum pump disposed in the vacuum chamber to maintain the vacuum environment inside the chamber, !t has been observed that in certain applications or chamber designs, there is a skew in the distribution of processing gas.
[0004] Therefore, there is a need for an improved apparatus for delivering processing gas with improved uniformity.
SUMMARY
[0005] Embodiments of the present invention relate to an apparatus for providing processing gases to a process chamber with improved uniformity. One embodiment of the present invention provides a gas delivery assembly. The gas delivery assembly includes a nozzle and one or more gas diffusers disposed in the nozzle. The nozzle has a cylindrical body with a side wall and a top surface. A plurality of injection passages are formed inside the nozzle to deliver processing gases into the process chamber via a plurality of outlets disposed in the side wail. The injection passages are configured to direct process gases out of each outlet disposed in the side wall in a direction which is not radially aligned with a centerline of the hub.
[0006] In one embodiment, a gas delivery assembly is disclosed. The gas delivery assembly includes a nozzle having a cylindrical body with a side wail and a top surface, a first trench disposed in the top surface, and a first diffuser disposed in the first trench. A first plenum is formed between the first diffuser and a bottom of the first trench. The gas delivery assembly further includes a plurality of outer injection passages formed within the nozzle. Each of the outer injection passages extends from the bottom of the first trench to a first location inside the nozzle that is a first distance away from the top surface. The gas delivery assembly further includes a connecting passage connecting each of the outer injection passages to a first outlet disposed in the side wall of the nozzle. The connecting passage is substantially parallel to a bottom of the nozzle and is not radially aligned with a centerline of the nozzle.
[0007] In another embodiment, a substrate processing system is disclosed. The substrate processing system includes a chamber body defining a processing volume and a chamber lid having a central opening. The substrate processing system further includes a substrate support disposed in the processing volume and a gas delivery assembly having a hub and a nozzle disposed over the chamber lid. A portion of the nozzle is positioned in the processing volume through the central opening in the chamber lid. The nozzle includes a cylindrical body having a side wall, a top surface having one or more trenches, and a gas diffuser disposed inside each trench. D Icr Ulfc¾U IIr I lunj Ur I is U WsS^US?
[0008] So thai the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
[0009] Figure 1 schematically illustrates a sectional view of a plasma processing system according to one embodiment of the invention.
[0010] Figure 2 is an enlarged sectional view of a gas delivery assembly according to one embodiment of the invention.
[0011] Figure 3A is an isometric view of a nozzle according to one embodiment of the invention.
[0012] Figure 3B is a partial sectional view of the nozzle of Figure 3A.
[0013] Figure 3C is a top view of the nozzle of Figure 3A.
[0014] Figure 3D is a sectional view of the nozzle of Figure 3A taken through section line 3C depicted in Figure 2.
[0015] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements disclosed in one embodiment may be beneficially utilized on other embodiments without specific recitation.
Figure imgf000005_0001
[0016] Embodiments of the present invention generally relate to an apparatus for providing processing gases to a process chamber with improved uniformity. More particularly, embodiments of the present invention provide a gas delivery assembly including a hub for receiving one or more gases from a source, a nozzle for injecting the one or more gases to a process chamber through a plurality of injection passages and one or more gas diffusers disposed in a top surface of the nozzle. The gas diffusers create a small pressure head when the nozzle is coupled to the hub, thus the processing gases received from a single source can have uniform flow through multiple injection points.
[0017] Figure 1 schematically illustrates a sectional view of a substrate processing system 100, for processing a variety of substrates and accommodating a variety of substrate sizes, for example, a substrate diameter of up to about 300mm or 450 mm. The substrate processing system 100 includes a chamber body 102 having a processing volume 104 defined therein. The chamber housing assembly 102 may include sidewalls 108 and a chamber lid 108. A substrate support assembly 1 10 may be disposed in the processing volume 104. The substrate support assembly 1 10 supports a substrate 1 12 during processing. A slit valve opening 144 may be formed in the chamber wall 108 to allow a robot (not shown) to move substrates in and out of the processing volume 104. A slit valve door 148 may be used to selectively close the slit valve opening 144. A plurality of lift pins 148 may be selectively extended from the substrate support assembly 1 10 to facilitate substrate transfer between the robot and the substrate support assembly 1 10. In one embodiment, the substrate support assembly 1 10 may include an electrostatic chuck 1 13 for securing the substrate 1 12 thereon during processing.
[0018] The chamber lid 108 has an opening 1 18 to allow entrance of one or more processing gases. The opening 1 18 may be a central opening located near a centeriine 1 18 of the substrate processing system 100 and correspond to a center of the substrate 1 12 being processed.
[Θ019] A gas delivery assembly 120 is disposed over the chamber lid 108 through the opening 1 16. The gas delivery assembly 120 may be connected to a gas source 124 through one or more gas input lines 122 to supply one or more processing gases to the processing volume 104. In one embodiment., the one or more processing gases may exit the processing volume 104 via a pumping channel 138 formed in a liner 140 disposed inside the processing volume 104. The pumping channel 138 may be in fluid communication with a vacuum pump 142. Alternatively, the vacuum pump 142 may be connected to the processing volume 104 directly.
[0020] A sensor 128 may be disposed over the chamber lid 108 and configured to monitor the substrate 1 12 in the processing volume 104 through the gas delivery assembly 120. The sensor 126 may be connected to a system controller 128 to provide feedback for process control.
[0021] The system controller 128 comprises a central processing unit (CPU) (not shown), a memory (not shown), and support circuits (not shown) for the CPU and facilitates control of the components of the process chamber 100. The system controller 128 may be one of any form of general-purpose computer processor that can be used in an industrial setting for controlling various chambers and sub-processors. The memory of the CPU may be one or more of readily available memory such as random access memory (RAM), read only memory (ROM), floppy disk, hard disk, or any other form of digital storage, local or remote. The support circuits are coupled to the CPU for supporting the processor in a conventional manner. These circuits include cache, power supplies, clock circuits, input/output circuitry and subsystems, and the like. The inventive method is generally stored in the memory or other computer-readable medium accessible to the CPU as a software routine. Alternatively, such software routine may also be stored and/or executed by a second CPU (not shown) that is remotely located from the hardware being controlled by the CPU.
[0022] Optionally, the substrate processing system 100 may include an antenna assembly 130 disposed over the chamber lid 108. The antenna assembly 130 is configured to generate plasma in the processing volume 104.
The antenna assembly 130 may include one or more solenoidal interleaved coil antennas disposed coaxial with the centerline 1 18 of the substrate processing system 100. A heater assembly 132 may be disposed over the chamber lid 108. The heater assembly 132 may be secured to the chamber lid 108 by clamping members 134, 136.
[Θ023] The gas delivery assembly 120 is configured to supply one or more processing gases to the processing volume 104 in a uniform manner. Figure 2 is an enlarged sectional view of the gas delivery assembly 120 disposed on the chamber lid 108 with the damping members 134, 136 and the heater assembly 132 removed. In the embodiment of Figure 2, the centerline 1 18 of the processing system 100 is also the centerline of the gas delivery assembly 120.
[0024] As shown in Figure 2, the gas delivery assembly 120 includes a hub 210, a nozzle 230 and one or more gas diffusers 250 disposed in the nozzle 230. When assembled, the nozzle 230 is disposed through the opening 1 16 of the chamber lid 108. The nozzle 230 may have a flange 232 for mounting the nozzle 230 on the chamber lid 108. A portion of the nozzle 230 protrudes into the processing volume 104 through the opening 1 16 to deliver processing gas to the processing volume 104. The hub 210 is positioned on the chamber lid 108 covering the opening 1 16 and the nozzle 230. The hub 210 is disposed over the nozzle 230 and provides an interface between the gas input lines 122 and the nozzle 230.
[0025] The hub 210 has a body shaped to enclose the opening 1 18 and interface with the nozzle 230. The body has an outer surface facing the exterior environment and a bottom surface 213 for contacting with the nozzle
230 and the chamber lid 108. In one embodiment, the body is substantially circular and concentric with the centerline 1 18. The body has an outer channel 206 and an inner channel 208. In one embodiment, both inner and outer channels 208, 206 are circular and the outer channel 206 is arranged radially outward of the inner channel 208. In one embodiment, the outer channel 206 and the inner channel 208 have different heights in the body.
One or more inlet passages 212a, 212b are formed through the body and connected to the outer channel 206 and the inner channel 208. Because the outer and inner channels 206, 208 have different heights, the inlet passage 212b connected to the inner circular channel 208 does not disrupt, e.g., is isolated from, the outer channel 206. The one or more inlet passages 212a, 212b are adapted to connect with the one or more gas input lines 122. !n one embodiment, the one or more inlet passages 212a, 212b are non-symmetrical relative to the centerline 1 18.
[0026] The top surface 231 of the nozzle 230 has one or more trenches 260 and the gas diffusers 250 are disposed inside at least one of the trenches 260 (detail described below). A gland 226 may be formed in the bottom surface 213 of the hub 210 to receive a seal 276. When assembled, the glands 226 and the seals 276 surround the opening 1 16 of the chamber lid 108 and the seal 276 contacts the chamber lid 108 to form an air tight seal between the processing volume 104 and the exterior environment. Another gland 278 may be formed between the inner channel 208 and the outer channel 206 to receive a seal 280 to form an air tight sea! between the two channels.
[0027] In one embodiment, the gas injection assembly 120 includes an observation window 270. The body of the hub 210 may have a through hole 222 and the nozzle 230 may be a hollow cylinder having a central opening 240. The observation window 270 may be disposed between the hub 210 and the nozzle 230. In one embodiment, the nozzle 230 may have a recess 242 for supporting the observation window 270. The hub 210 may have a gland 272 formed to receive a seal 274 to provide a vacuum seal between the hub 210 and the observation window 270. In one embodiment, the observation window 270 is fabricated from quartz.
[0028] The nozzle 230 has a cylindrical body with a side wall 228 and a top surface 231 for contacting with the bottom surface 213 of the hub 210.
The nozzle 230 has a plurality of inner injection passages 238 and a plurality of outer injection passages 236 for injecting one or more processing gases from the outer and inner channels 206, 208 of the hub 210 to the processing volume 104. In one embodiment, the outer injection passages 236 are arranged radially outward of the inner injection passages 238. The outer and inner injection passages 238, 238 may have outlets at various positions to achieve gas injection. In one embodiment, as shown in Figure 2, the outer injection passages 236 have outlets 308 disposed in the side wail 228 and are connected to the outlets 306 by connecting passages 330. The inner injection passages 238 have outlets 350 disposed in a bottom surface 235 of the nozzle 230 and directed downward from the nozzle 230. In one embodiment, the outer and inner injection passages 236, 238 are evenly distributed in azimutha! orientation (e.g., in an evenly distributed polar array).
[0029] Figures 3A - 3D illustrate the nozzle 230 according to various embodiments of the invention. Figure 3A is an isometric view of the nozzle 230, while Figure 3B is a partial sectional view of the nozzle 230. The top surface 231 of the nozzle 230 has an outer trench 302 and an inner trench 304. In one embodiment, the outer and inner trenches 302, 304 are circular and concentric with the centerline 1 18. The plurality of outlets 308 of the outer injection passages 236 are disposed in the side wail 228. In one embodiment, the outlets 306 are disposed evenly along the circumference of the side wall 228.
[Θ030] As shown in Figure 3B, the gas diffusers 250a, 250b are disposed inside the outer and inner trenches 302, 304, respectively. The gas diffusers 250a, 250b are spaced from bottoms 352, 354 of the outer and inner trenches 302, 304, thus, creating plenums 358, 358 between the gas diffusers 250a, 250b and bottoms 352, 354 of the outer and inner trenches 302, 304 so that the processing gases may be evenly distributed into the injection passages 238, 238. The gas diffusers 250a, 250b may be any suitable gas permeable material or structure. In one embodiment, as shown in Figure 3A, the gas diffusers 250a, 250b have a plurality of holes 308. The gas diffusers 250a, 250b may be made of alumina or the same material as the nozzle 230. In one embodiment, the nozzle 230 and the gas diffusers 250a, 250b are made of ceramic material. When the hub 210 and the nozzle 230 are assembled, the inner trench 304 of the nozzle 230 is aligned with the inner channel 208 of the hub 210, and the outer trench 302 of the nozzle 230 is aligned with the outer channel 208 of the hub 210,
[0031] As shown in Figure 3B, the outer injection passage 236 extends from the bottom 352 of the outer trench 302 to a location within the nozzle 230 that is a distance away from the top surface 231 . The inner injection passage 238 extends from the bottom 354 of the inner trench 304 to a location within the nozzle 230 that is a distance away from the top surface 231 , In one embodiment, the inner injection passage 238 extends further into the nozzle 230 than the outer injection passage 236.
[Θ032] Figure 3C is a top view of the nozzle 230, in which the gas diffusers 250a, 250b are transparent for better illustration. As described above, the nozzle 230 has the plurality of outer injection passages 236 and the plurality of inner injection passages 238 disposed therein. In one embodiment, the outer injection passages 236 are arranged radially outward of the inner injection passages 238. As shown in Figure 3C, the outer injection passages 236 have inlets 320 disposed at the bottom of the outer trench 302, and the inner injection passages 236 have inlets 310 disposed at the bottom of the inner trench 304. The inlets 310, 320 may be disposed evenly inside the inner and outer trenches 304, 302. The area of one of the plurality of holes 308 of the gas diffusers 250a, 250b may be smaller than the surface area of one of the inlets 310, 320. in one embodiment, the total area of the holes 308 of the diffuser 250a equals the total surface area of the inlets 320, and the total area of the holes 308 of the diffuser 250b equals the total surface area of the inlets 310. The gas diffusers 250a, 250b create a small pressure head when the nozzle 230 is coupled to the hub 210, thus the processing gases received from a single gas source 124 can have uniform flow through multiple injection points.
[0033] Figure 3D is a sectional view of the nozzle 230 without the gas diffusers 250. As shown in Figure 2, the outer injection passages 236 extends from the bottom of the outer trench 302 to a distance inside the nozzle 230 from the top surface 231 , and the outlets 308 of the outer injection passages 238 are disposed in the side wall 228. As shown in Figure 3D, each outlet 306 and the corresponding outer injection passage 236 are connected by a connecting passage 330. The connecting passage 330 is not perpendicular to a tangent 340 of the side wall 228 at the outlet 308 (e.g., the angle "A" in Figure 3D does not equal to 90 degrees). In other words, the connecting passages 330 are not radially aligned with the centerline 1 18 of the chamber body 102, which is also the centerline of the hub 210, nozzle 230, and gas diffusers 250a, 250b. In one embodiment, the angle "A" ranges from about 15 degrees to about 80 degrees. The processing gases exiting the outlet 306 are directed in the same direction defined by the connecting passage 330. If the angle "A" is 90 degrees, then the processing gases coming out of the outlet that is facing the vacuum pump 142 may travel at a faster speed compare to the processing gases coming out of all other outlets. By changing the angle "A" to an angle other than 90 degrees, the processing gases are coming out of each outlet at substantially the same speed, thus creating a more uniform gas flow inside the process chamber.
[0034] In summary, by adding one or more internal gas diffusers in the nozzle of a gas delivery assembly along with changing the angle of processing gases coming out of outlets disposed along the circumference of the side wail of the nozzle, a more uniform flow of the processing gases is achieved.
[0035] While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

What is claimed is:
1 . A gas delivery assembly, comprising:
a nozzle comprising a cylindrical body having a side wail and a top surface; a first trench disposed in the top surface;
a first diffuser disposed in the first trench, wherein a first plenum is formed between the first diffuser and a bottom of the first trench;
a plurality of outer injection passages formed within the nozzle, wherein each of the outer injection passages extends from the bottom of the first trench to a first location inside the nozzle that is a first distance away from the top surface; and
a connecting passage connecting each of the outer injection passages to a first outlet disposed in the side wall of the nozzle, wherein the connecting passage is substantially parallel to a bottom of the nozzle and is not radially aligned with a centerline of the nozzle.
2. The gas delivery assembly of claim 1 , further comprising a second trench disposed in the top surface of the nozzle.
3. The gas delivery assembly of claim 2, further comprising a second diffuser disposed in the second trench, wherein a second plenum is formed between the second diffuser and a bottom of the second trench.
4. The gas delivery assembly of claim 3, further comprising a plurality of inner injection passages formed within the nozzle, wherein each of the inner injection passages extend from the bottom of the second trench to a second location inside the nozzle that is a second distance away from the top surface.
5. The gas delivery assembly of claim 3, wherein the first and second diffusers each comprises a plurality of holes.
6. The gas delivery assembly of claim 1 , further comprising a hub comprising an inner channel and an outer channel, wherein the hub is coupled to the nozzle and the inner channel is aligned with the second trench and the outer channel is aligned with the first trench.
7. The gas delivery assembly of claim 1 , wherein an angle between the first connecting passage and a tangent of the side wall at the outlet ranges from about 15 degrees to about 60 degrees.
8. A substrate processing system, comprising:
a chamber body defining a processing volume, wherein the chamber body comprises a chamber lid having a central opening;
a substrate support disposed in the processing volume; and
a gas delivery assembly having a hub and a nozzle disposed over the chamber lid, and a portion of the nozzle is positioned in the processing volume through the central opening in the chamber lid, wherein the nozzle comprises:
a cylindrical body having a side wall;
a top surface having one or more trenches; and
a gas diffuser disposed inside each trench.
9. The substrate processing system of claim 8, further comprising a plurality of outlets formed in the side wall of the nozzle.
10. The substrate processing system of claim 9, further comprising a plurality of inner injection passages and a plurality of outer injection passages formed inside the nozzle.
1 1 . The substrate processing system of claim 10, wherein the top surface has an inner trench and an outer trench, and each of the outer injection passages extends from an outer inlet disposed at a bottom of the outer trench to a location inside the nozzle that is a distance away from the top surface and each of the inner injection passages extends from an inner inlet disposed at a bottom of the inner trench to a bottom surface of the nozzle.
12. The substrate processing system of claim 1 1 , wherein each outlet is connected to one of the plurality of the outer injection passages by a connecting passage, wherein the connecting passage is substantially parallel to the bottom surface of the nozzle and is not radially aligned with a centerline of the hub.
13. The substrate processing system of claim 12, wherein the angle between the connecting passage and the tangent of the cylindrical side wall at the outlet ranges from about 15 degrees to about 60 degrees.
14. The substrate processing system of claim 8, wherein one or more trenches are circular.
15. The substrate processing system of claim 14, wherein each diffuser comprises a plurality of holes.
PCT/US2014/014455 2013-02-25 2014-02-03 Tunable gas delivery assembly with internal diffuser and angular injection Ceased WO2014130230A1 (en)

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Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9388494B2 (en) * 2012-06-25 2016-07-12 Novellus Systems, Inc. Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
US9536710B2 (en) 2013-02-25 2017-01-03 Applied Materials, Inc. Tunable gas delivery assembly with internal diffuser and angular injection
CN104782234B (en) 2013-03-15 2017-07-14 应用材料公司 Plasma Reactor with Highly Symmetric Quadruple Gas Injection
US10119191B2 (en) * 2016-06-08 2018-11-06 Applied Materials, Inc. High flow gas diffuser assemblies, systems, and methods
KR102553629B1 (en) * 2016-06-17 2023-07-11 삼성전자주식회사 Plasma processing apparatus
US20190032211A1 (en) * 2017-07-28 2019-01-31 Lam Research Corporation Monolithic ceramic gas distribution plate
US20200258718A1 (en) * 2019-02-07 2020-08-13 Mattson Technology, Inc. Gas Supply With Angled Injectors In Plasma Processing Apparatus
CN110223904A (en) * 2019-07-19 2019-09-10 江苏鲁汶仪器有限公司 A kind of plasma process system with Faraday shield device
US11454390B2 (en) * 2019-12-03 2022-09-27 Fisher Controls International Llc Spray heads for use with desuperheaters and desuperheaters including such spray heads
CN111081525B (en) * 2019-12-31 2021-06-08 江苏鲁汶仪器有限公司 Device for blocking plasma backflow protection air inlet structure of process chamber
KR102781656B1 (en) * 2020-04-06 2025-03-13 램 리써치 코포레이션 Ceramic additive manufacturing techniques for gas injectors
CN113707527B (en) * 2020-05-21 2022-07-29 江苏鲁汶仪器有限公司 Separate air inlet structure for preventing plasma from flowing reversely
CN113838735B (en) * 2020-06-24 2024-11-26 拓荆科技股份有限公司 Device for evenly distributing gas
KR102607844B1 (en) * 2020-07-10 2023-11-30 세메스 주식회사 Apparatus for treating substrate and unit for supporting substrate
KR20220021206A (en) 2020-08-13 2022-02-22 삼성전자주식회사 Plasma processing apparatus
CN118431054A (en) * 2023-02-02 2024-08-02 江苏鲁汶仪器股份有限公司 Edge air inlet device and plasma etching system
US20240351055A1 (en) * 2023-04-20 2024-10-24 Applied Materials, Inc. Icp source gas delivery hub and nozzle

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030095801A (en) * 2002-06-14 2003-12-24 주성엔지니어링(주) HPD-CVD apparatus having rotation type injector and gap filling method using the same
US20090272492A1 (en) * 2008-05-05 2009-11-05 Applied Materials, Inc. Plasma reactor with center-fed multiple zone gas distribution for improved uniformity of critical dimension bias
US20100068891A1 (en) * 2006-11-09 2010-03-18 Masanobu Hatanaka Method of forming barrier film
KR20100131566A (en) * 2009-06-08 2010-12-16 주식회사 에스엠아이 Shower head of chemical vapor deposition apparatus
US20120100292A1 (en) * 2010-04-12 2012-04-26 Semes Co., Ltd. Gas injection unit and a thin-film vapour-deposition device and method using the same

Family Cites Families (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2016970A1 (en) * 1990-05-16 1991-11-16 Prasad N. Gadgil Inverted diffusion stagnation point flow reactor for vapor deposition of thin films
US5188671A (en) * 1990-08-08 1993-02-23 Hughes Aircraft Company Multichannel plate assembly for gas source molecular beam epitaxy
US5542559A (en) * 1993-02-16 1996-08-06 Tokyo Electron Kabushiki Kaisha Plasma treatment apparatus
US5746875A (en) * 1994-09-16 1998-05-05 Applied Materials, Inc. Gas injection slit nozzle for a plasma process reactor
JP3380091B2 (en) * 1995-06-09 2003-02-24 株式会社荏原製作所 Reactive gas injection head and thin film vapor phase growth apparatus
JPH0945624A (en) * 1995-07-27 1997-02-14 Tokyo Electron Ltd Single wafer type heat treatment equipment
US6500314B1 (en) * 1996-07-03 2002-12-31 Tegal Corporation Plasma etch reactor and method
US6209480B1 (en) * 1996-07-10 2001-04-03 Mehrdad M. Moslehi Hermetically-sealed inductively-coupled plasma source structure and method of use
US5846883A (en) * 1996-07-10 1998-12-08 Cvc, Inc. Method for multi-zone high-density inductively-coupled plasma generation
US6390019B1 (en) * 1998-06-11 2002-05-21 Applied Materials, Inc. Chamber having improved process monitoring window
US6143078A (en) * 1998-11-13 2000-11-07 Applied Materials, Inc. Gas distribution system for a CVD processing chamber
US6230651B1 (en) 1998-12-30 2001-05-15 Lam Research Corporation Gas injection system for plasma processing
KR100545034B1 (en) * 2000-02-21 2006-01-24 가부시끼가이샤 히다치 세이사꾸쇼 Plasma processing apparatus and method for processing substrate
US6450117B1 (en) * 2000-08-07 2002-09-17 Applied Materials, Inc. Directing a flow of gas in a substrate processing chamber
KR100413145B1 (en) * 2001-01-11 2003-12-31 삼성전자주식회사 Gas injector and apparatus for etching the gas injector
US20030070620A1 (en) * 2001-10-15 2003-04-17 Cooperberg David J. Tunable multi-zone gas injection system
US6998014B2 (en) * 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
JP4128383B2 (en) * 2002-03-27 2008-07-30 東京エレクトロン株式会社 Processing apparatus and processing method
US20030192645A1 (en) * 2002-04-16 2003-10-16 Applied Materials, Inc. Method and apparatus for creating circumferential process gas flow in a semiconductor wafer plasma reactor chamber
JP4338355B2 (en) * 2002-05-10 2009-10-07 東京エレクトロン株式会社 Plasma processing equipment
US20040082251A1 (en) * 2002-10-29 2004-04-29 Applied Materials, Inc. Apparatus for adjustable gas distribution for semiconductor substrate processing
KR100862658B1 (en) * 2002-11-15 2008-10-10 삼성전자주식회사 Gas injection device of semiconductor processing system
KR100505367B1 (en) * 2003-03-27 2005-08-04 주식회사 아이피에스 Reactor for depositing thin film on wafer
KR100500246B1 (en) * 2003-04-09 2005-07-11 삼성전자주식회사 Gas supplying apparatus
JP4026529B2 (en) * 2003-04-10 2007-12-26 東京エレクトロン株式会社 Shower head structure and processing apparatus
US6921437B1 (en) * 2003-05-30 2005-07-26 Aviza Technology, Inc. Gas distribution system
US20050103267A1 (en) * 2003-11-14 2005-05-19 Hur Gwang H. Flat panel display manufacturing apparatus
KR100614648B1 (en) * 2004-07-15 2006-08-23 삼성전자주식회사 Substrate Processing Apparatus Used for Manufacturing Semiconductor Devices
JP4550507B2 (en) * 2004-07-26 2010-09-22 株式会社日立ハイテクノロジーズ Plasma processing equipment
KR100782369B1 (en) * 2004-11-11 2007-12-07 삼성전자주식회사 Semiconductor manufacturing device
KR100854995B1 (en) * 2005-03-02 2008-08-28 삼성전자주식회사 High Density Plasma Chemical Vapor Deposition Equipment
US7722719B2 (en) * 2005-03-07 2010-05-25 Applied Materials, Inc. Gas baffle and distributor for semiconductor processing chamber
KR101153161B1 (en) * 2005-04-01 2012-06-18 주성엔지니어링(주) Gas injector and Apparatus including the same for fabricating Liquid Crystal Display Device
KR101019293B1 (en) * 2005-11-04 2011-03-07 어플라이드 머티어리얼스, 인코포레이티드 Plasma-Enhanced Atomic Layer Deposition Apparatus and Method
US7685965B1 (en) * 2006-01-26 2010-03-30 Lam Research Corporation Apparatus for shielding process chamber port
US20070187363A1 (en) * 2006-02-13 2007-08-16 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
US8440049B2 (en) * 2006-05-03 2013-05-14 Applied Materials, Inc. Apparatus for etching high aspect ratio features
US8475625B2 (en) * 2006-05-03 2013-07-02 Applied Materials, Inc. Apparatus for etching high aspect ratio features
JP2008047869A (en) * 2006-06-13 2008-02-28 Hokuriku Seikei Kogyo Kk Shower plate and manufacturing method thereof, and plasma processing apparatus, plasma processing method and electronic device manufacturing method using the shower plate
US7928366B2 (en) * 2006-10-06 2011-04-19 Lam Research Corporation Methods of and apparatus for accessing a process chamber using a dual zone gas injector with improved optical access
US7932181B2 (en) * 2006-06-20 2011-04-26 Lam Research Corporation Edge gas injection for critical dimension uniformity improvement
US20080078746A1 (en) * 2006-08-15 2008-04-03 Noriiki Masuda Substrate processing system, gas supply unit, method of substrate processing, computer program, and storage medium
KR100978754B1 (en) * 2008-04-03 2010-08-30 주식회사 테스 Plasma processing equipment
WO2008123391A2 (en) * 2007-03-23 2008-10-16 Panasonic Corporation Apparatus and method for plasma doping
US8419854B2 (en) * 2007-04-17 2013-04-16 Ulvac, Inc. Film-forming apparatus
CN101802254B (en) * 2007-10-11 2013-11-27 瓦伦斯处理设备公司 Chemical vapor deposition reactor
JP5149610B2 (en) * 2007-12-19 2013-02-20 株式会社日立ハイテクノロジーズ Plasma processing equipment
US8137463B2 (en) * 2007-12-19 2012-03-20 Applied Materials, Inc. Dual zone gas injection nozzle
US20090159213A1 (en) * 2007-12-19 2009-06-25 Applied Materials, Inc. Plasma reactor gas distribution plate having a path splitting manifold immersed within a showerhead
CN101488446B (en) * 2008-01-14 2010-09-01 北京北方微电子基地设备工艺研究中心有限责任公司 Plasma processing equipment and its gas distribution device
KR101204614B1 (en) * 2008-02-20 2012-11-23 도쿄엘렉트론가부시키가이샤 Gas supply device
US8110068B2 (en) * 2008-03-20 2012-02-07 Novellus Systems, Inc. Gas flow distribution receptacles, plasma generator systems, and methods for performing plasma stripping processes
US20090269506A1 (en) * 2008-04-24 2009-10-29 Seiji Okura Method and apparatus for cleaning of a CVD reactor
WO2010004836A1 (en) * 2008-07-09 2010-01-14 東京エレクトロン株式会社 Plasma processing device
KR20100015213A (en) * 2008-08-04 2010-02-12 삼성전기주식회사 Showerhead and chemical vapor deposition apparatus having the same
US8430341B2 (en) * 2008-10-09 2013-04-30 OYSTAR North America LLC Long distance gassing apparatus and methods
KR101110080B1 (en) * 2009-07-08 2012-03-13 주식회사 유진테크 Substrate treatment method for selectively inserting diffusion plate
CN101643904B (en) * 2009-08-27 2011-04-27 北京北方微电子基地设备工艺研究中心有限责任公司 Deep silicon etching device and intake system thereof
JP5457109B2 (en) * 2009-09-02 2014-04-02 東京エレクトロン株式会社 Plasma processing equipment
US9076634B2 (en) * 2009-09-10 2015-07-07 Lam Research Corporation Replaceable upper chamber parts of plasma processing apparatus
CN102763198B (en) * 2009-09-25 2015-05-06 应用材料公司 Method and apparatus for high efficiency gas dissociation in inductive coupled plasma reactor
KR101095172B1 (en) * 2009-10-01 2011-12-16 주식회사 디엠에스 Side gas injector in the plasma reaction chamber
US9540731B2 (en) * 2009-12-04 2017-01-10 Applied Materials, Inc. Reconfigurable multi-zone gas delivery hardware for substrate processing showerheads
WO2011100293A2 (en) * 2010-02-12 2011-08-18 Applied Materials, Inc. Process chamber gas flow improvements
US20110256692A1 (en) * 2010-04-14 2011-10-20 Applied Materials, Inc. Multiple precursor concentric delivery showerhead
JP5740203B2 (en) * 2010-05-26 2015-06-24 東京エレクトロン株式会社 Plasma processing apparatus and processing gas supply structure thereof
US10658161B2 (en) * 2010-10-15 2020-05-19 Applied Materials, Inc. Method and apparatus for reducing particle defects in plasma etch chambers
WO2012071661A1 (en) * 2010-11-30 2012-06-07 Socpra Sciences Et Genie S.E.C. Epitaxial deposition apparatus, gas injectors, and chemical vapor management system associated therewith
US20120152900A1 (en) * 2010-12-20 2012-06-21 Applied Materials, Inc. Methods and apparatus for gas delivery into plasma processing chambers
TW201331408A (en) * 2011-10-07 2013-08-01 Tokyo Electron Ltd Plasma processing device
US9947512B2 (en) * 2011-10-25 2018-04-17 Lam Research Corporation Window and mounting arrangement for twist-and-lock gas injector assembly of inductively coupled plasma chamber
US8960235B2 (en) * 2011-10-28 2015-02-24 Applied Materials, Inc. Gas dispersion apparatus
KR20130086806A (en) * 2012-01-26 2013-08-05 삼성전자주식회사 Thin film deposition apparatus
US9162236B2 (en) * 2012-04-26 2015-10-20 Applied Materials, Inc. Proportional and uniform controlled gas flow delivery for dry plasma etch apparatus
US9976215B2 (en) * 2012-05-01 2018-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor film formation apparatus and process
US9388494B2 (en) * 2012-06-25 2016-07-12 Novellus Systems, Inc. Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
US9745663B2 (en) * 2012-07-20 2017-08-29 Applied Materials, Inc. Symmetrical inductively coupled plasma source with symmetrical flow chamber
US9021985B2 (en) * 2012-09-12 2015-05-05 Asm Ip Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
KR101411993B1 (en) * 2012-09-25 2014-06-26 (주)젠 Antenna assembly and plasma process chamber having the same
WO2014116392A1 (en) * 2013-01-25 2014-07-31 Applied Materials, Inc. Electrostatic chuck with concentric cooling base
US9536710B2 (en) 2013-02-25 2017-01-03 Applied Materials, Inc. Tunable gas delivery assembly with internal diffuser and angular injection
CN104782234B (en) 2013-03-15 2017-07-14 应用材料公司 Plasma Reactor with Highly Symmetric Quadruple Gas Injection

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030095801A (en) * 2002-06-14 2003-12-24 주성엔지니어링(주) HPD-CVD apparatus having rotation type injector and gap filling method using the same
US20100068891A1 (en) * 2006-11-09 2010-03-18 Masanobu Hatanaka Method of forming barrier film
US20090272492A1 (en) * 2008-05-05 2009-11-05 Applied Materials, Inc. Plasma reactor with center-fed multiple zone gas distribution for improved uniformity of critical dimension bias
KR20100131566A (en) * 2009-06-08 2010-12-16 주식회사 에스엠아이 Shower head of chemical vapor deposition apparatus
US20120100292A1 (en) * 2010-04-12 2012-04-26 Semes Co., Ltd. Gas injection unit and a thin-film vapour-deposition device and method using the same

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TW201441414A (en) 2014-11-01
US20170110292A1 (en) 2017-04-20

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