WO2014124570A1 - Shift register unit, grid drive circuit and display device - Google Patents

Shift register unit, grid drive circuit and display device Download PDF

Info

Publication number
WO2014124570A1
WO2014124570A1 PCT/CN2013/074001 CN2013074001W WO2014124570A1 WO 2014124570 A1 WO2014124570 A1 WO 2014124570A1 CN 2013074001 W CN2013074001 W CN 2013074001W WO 2014124570 A1 WO2014124570 A1 WO 2014124570A1
Authority
WO
WIPO (PCT)
Prior art keywords
signal
output
pull
node
transistor
Prior art date
Application number
PCT/CN2013/074001
Other languages
French (fr)
Chinese (zh)
Inventor
吴博
祁小敬
聂磊森
Original Assignee
京东方科技集团股份有限公司
成都京东方光电科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京东方科技集团股份有限公司, 成都京东方光电科技有限公司 filed Critical 京东方科技集团股份有限公司
Publication of WO2014124570A1 publication Critical patent/WO2014124570A1/en

Links

Classifications

    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00Command of the display device
    • G09G2310/02Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264Details of driving circuits
    • G09G2310/0286Details of a shift registers arranged for use in a driving circuit

Definitions

  • Shift register unit gate drive circuit and display device
  • the present invention relates to a shift register technique, and more particularly to a shift register unit, a gate drive circuit and a display device. Background technique
  • the integrated gate shift register integrates the gate pulse output registers on the panel, saving IC and reducing cost.
  • a shift register is composed of multi-stage shift register units, and each stage shift register unit outputs a high level signal only in a very short time, and outputs a low level signal at other times.
  • VSS signal usually the VSS signal.
  • the prior art shift register has at least the disadvantage of a low product life, which is explained below.
  • each stage of the shift register unit outputs a high level signal only in a very short time, and outputs a low level signal at other times.
  • the pull-up node and the output node need to output a low-level signal, usually vss. That is to say, the pull-up node and the output node output a low-level signal for a very long time, which usually accounts for more than 99%.
  • the VSS signal is output through the pull-down transistor, which requires the pull-down transistor to be in a high-level state to output the VSS signal to the pull-up node and the output node.
  • the gate of the pull-down transistor is in a high state for a long time, which causes the pull-down transistor to age faster than other transistors in the shift register unit, shortening the service life of the product.
  • an embodiment of the present invention provides a shift register unit, wherein the shift register unit has a capacitor unit, one end of the capacitor unit is connected to the output node of the current level, and the other end is connected to the pull-up node.
  • the shift register unit further includes a pull-down of the output of the current stage a first pull-down unit of a potential of the node and a second pull-down unit for pulling down a potential of the pull-up node, the first pull-down unit comprising a first set of transistors having at least two transistors, the second pulldown
  • the unit includes a second group of transistors having at least two transistors.
  • the first group of transistors When the output node of the current stage is in a pull-down phase, the first group of transistors are turned on under the control of respective control signals, and the output is low in turn. Leveling the signal to the output node of the current stage; when the pull-up node is in the pull-down phase, the second group of transistors are turned on under the control of respective control signals, and output a low-level signal in turn Said pull up the node.
  • the shift register unit described above further comprising:
  • the first transistor T1 has a source connected to a signal output terminal of the output second control signal, a drain connected to the output node of the current stage, and a gate connected to the pull-up node; when the output node of the stage needs to output a high level signal, The second control signal is at a high level;
  • the third transistor T3 has a source connected to the upper output node, a drain connected to the pull-up node, and a gate and an output signal outputting a signal at a high level when the output node of the upper stage outputs a high level.
  • the second group of transistors includes the third transistor T3, and the low level signal received by the pull-up node includes a low level signal output by the upper output node output by the third transistor T3. .
  • the second group of transistors further includes a fourth transistor T4, the drain is connected to the next-stage output node, the source is connected to the pull-up node, and the gate and the signal outputting the fourth control signal are The output terminal is connected; the low level signal received by the pull-up node includes a low level signal output by the next-stage output node output by the fourth transistor T4.
  • the shift register unit described above further comprising:
  • the second transistor T2 has a drain receiving a turn-off signal, a source connected to the output node of the current stage, and a gate and an output signal connected to a signal output terminal at a high level when the output node of the upper stage outputs a high level;
  • the first group of transistors includes the second transistor T2, and the low level signal received by the current stage output node includes an off signal output by the second transistor (T2).
  • the first set of transistors includes:
  • a second transistor T2 the drain receiving the turn-off signal, the source being connected to the output node of the current stage, and the gate being connected to the signal output terminal outputting the first control signal
  • a sixth transistor T6 the drain receiving the turn-off signal, the source being connected to the output node of the current stage, and the gate being connected to the signal output terminal outputting the third control signal
  • the seventh transistor T7 has a drain receiving a turn-off signal, a source connected to the output node of the current stage, and a gate connected to a signal output terminal outputting the fourth control signal;
  • the second set of transistors includes:
  • a third transistor T3 the source is connected to the upper output node, the drain is connected to the pull-up node, and the gate is connected to the signal output terminal outputting the first control signal;
  • a fourth transistor T4 the drain is connected to the next-stage output node, the source is connected to the pull-up node, and the gate is connected to the signal output terminal outputting the fourth control signal;
  • the fifth transistor T5 has a drain connected to the signal output terminal of the output turn-off signal, a source connected to the pull-up node, and a gate connected to the signal output terminal outputting the third control signal;
  • the signal duty ratios of the first control signal, the second control signal, the third control signal, and the fourth control signal are 1/4, and the periods in the high level do not overlap each other;
  • the first control signal When the output node of the upper stage outputs a high level, the first control signal is at a high level; when the output node of the stage needs to output a high level signal, the second control signal is at a high level; When high, the third control signal is at a high level.
  • an embodiment of the present invention further provides a gate driving circuit including a plurality of shift register units according to the claims.
  • an embodiment of the present invention further provides a display device including the above-described gate driving circuit.
  • the plurality of TFTs in the pull-down unit are turned on in turn (that is, the gate turns are in a high level control). Therefore, in the pull-down phase, the gate of the pull-down transistor is only in a high state for a part of time.
  • the gate duty cycle voltage of the pull-down transistor is lowered, the life of the pull-down transistor is increased, and the lifetime of the entire shift register unit is improved.
  • the plurality of TFTs in the pull-down unit are turned on to output a low-level signal to the node to be pulled down, and the pull-down node is pulled down multiple times to reduce the glitch of the output signal of the shift register unit in the pull-down phase;
  • a part of the plurality of TFTs in the pull-down unit is an existing TFT in the multiplexed shift register unit, which reduces the number of components, reduces the cost, and also shifts the embodiment of the present invention.
  • the bit register unit facilitates a narrower panel border.
  • FIG. 1 is a block diagram showing the structure of a shift register unit according to an embodiment of the present invention.
  • Figure 2 is a timing chart showing the signal of the shift register unit shown in Figure 1;
  • FIG. 3 is a block diagram showing the structure of a shift register according to an embodiment of the present invention. detailed description
  • each of the pull-down units corresponding to the node to be pulled down includes at least two TFTs, so that the node to be pulled down
  • at least two TFTs included in the pull-down unit may be turned on in turn, output a low level signal to the node to be pulled down, and reduce the TFT gate in the pull-down unit to operate in a high level state. Time, slowing down the aging speed of the TFT in the pull-down unit and increasing the service life of the entire shift register unit.
  • the working process is as follows, which is generally divided into the following four stages:
  • Stage A the n-1th output node n-1 outputs a high level, at which time the level of the PU node is initially raised by the high level signal outputted by the output node of the upper stage;
  • stage B the PU node that continues to be raised opens a TFT, and outputs a high level signal to the output node of the current stage, so that the output node of the nth stage shift register unit outputs a high level signal;
  • stage C the output node of the n+1th stage outputs a high level signal, and the PU node of the nth stage shift register unit and the output node of the current stage are pulled low by the low level signal;
  • phase D until the next n-1th output node n-1 outputs a high level, the PU node of the nth stage shift register unit and the output node of the current stage are pulled low by the low level signal.
  • the pull down phase refers to phase C and phase D, i.e., the time other than the stage in which the output node of the primary stage and the output node of the upper stage output a high level signal.
  • the shift register unit of the embodiment of the invention has a capacitor unit, one end of the capacitor unit is connected to the output node of the current stage, and the other end is connected to the pull-up node, and the shift register unit further includes a pull-down unit for a first pull-down unit of the potential of the stage output node and for pulling up the pull-up a second pull-down unit of a potential of the node, wherein the first pull-down unit includes at least two first transistors, and the second pull-down unit includes at least two second transistors, where the output node of the current stage is in need of During the pull-down phase of the low-level signal control, the at least two first transistors are turned on in turn under the control of respective control signals, and alternately output a low-level signal to the output node of the current stage; When the pull-up node is in a pull-down phase that needs to be controlled by the low-level signal, the at least two second transistors are turned on under the control of respective control signals, and the low-level signal is alternate
  • the turn-on phase in the pull-down phase includes the following cases:
  • the turns are in the on state and continuously distributed in time; this distribution is easy to implement when designing the pull-down unit independently.
  • the turns are in the on state, but they are not continuously distributed in time. This distribution occurs when a TFT in an existing shift register unit needs to be multiplexed, as will be mentioned later in the 7T1C shift register.
  • each of the pull-down units is provided with multiple
  • TFTs these TFTs are turned on in turn (that is, the gate turns in a high level control) to alternately output a low level signal to the corresponding node.
  • the gate of the pull-down transistor is always in a high state, and the TFT in the pull-down unit of the embodiment of the present invention is only partially high.
  • the level state lowers the gate duty cycle voltage of the pull-down transistor, increasing the lifetime of the pull-down transistor, thereby increasing the lifetime of the entire shift register unit.
  • the pull-down transistor is under the control of a high level signal during a working time of 99.9% (1023/1024) or more. .
  • the PU node and the output node of the current stage are pulled down multiple times during the entire pull-down phase, which can reduce the glitch of the output signal of the shift register unit.
  • first pull-down unit and the second pull-down unit may be specifically implemented in various manners, as explained below.
  • the first pull down unit and the second pull down unit each operate independently and have respective independent control signals.
  • the number of TFTs of the first pull-down unit and the second pull-down unit may be the same or different.
  • the first pull-down unit has three TFTs, the source receives the VSS signal, and the drain is connected to the output node of the current stage, and the second pull-down unit has two TFTs, the source receives the VSS signal, and the drain and the pull-up Node connection.
  • the high-level signals of the three control signals corresponding to the three TFTs of the first pull-down unit do not overlap each other, but are continuously distributed throughout the pull-down phase of the output node of the current stage.
  • the high level signals of the two control signals corresponding to the two TFTs of the second pull-down unit do not overlap each other, but are continuously distributed throughout the pull-down phase of the pull-up node.
  • the control signals may have the same duty ratio or different duty ratios.
  • the two control signals XI and X2 of the two TFTs of the second pull-down unit do not overlap each other, and are output at the same level.
  • the node needs to continuously distribute the low-level signal for a period of time, but the high-level duration of XI is longer than the high-level duration of XI.
  • each of the pull-down units work independently, which is not conducive to the overall arrangement of the control signals, and also requires more control signals, which leads to a complicated structure.
  • the number of TFTs in the pull-down unit is the same, so the TFTs in different pull-down units can be grouped into two groups, and each group of TFTs uses the same control signal, and the high-level distribution intervals of all the control signals do not overlap each other.
  • the output node and the pull-up node of the current stage need to be continuously distributed within a time period controlled by the low-level signal.
  • the implementation of the pull-down unit in the embodiment of the present invention is not limited to the above implementation manner, and those skilled in the art may implement the above-mentioned pull-down unit in other manners according to the description of the embodiments of the present invention, which is not described in detail.
  • the above shift register unit further includes other TFTs a device, such as a TFT that is turned on when the output node of the upper stage outputs a high level signal and outputs the high level signal to the PU node for precharging, and, as in the precharge phase, outputs a low level signal.
  • a device such as a TFT that is turned on when the output node of the upper stage outputs a high level signal and outputs the high level signal to the PU node for precharging, and, as in the precharge phase, outputs a low level signal.
  • the TFT to the output node of this level.
  • the above-mentioned pull-down unit can be implemented by adding a new TFT to the existing components, but this will increase the number of TFTs and increase the complexity of implementation.
  • further multiplexing of an existing TFT as a TFT in a pull-down unit is further considered to reduce the number of TFTs.
  • one or more of the existing TFTs may be multiplexed to reduce the number of TFTs used by the shift register unit, several of which are described below.
  • the existing shift register unit includes a transistor T3 for outputting a high level signal outputted by the upper stage output node to the pull-up node for pre-charging when the upper stage output node outputs a high level signal,
  • the source is connected to the upper output node, the drain is connected to the pull-up node, and the gate and an output signal are connected at a signal output terminal that is at a high level when the output node of the upper stage outputs a high level;
  • the shift register unit of the first stage is in the pull-down phase, the shift register unit of the first stage necessarily outputs a low level signal.
  • the transistor T3 is multiplexed as the second pull-down unit. a part of the circuit, that is, the at least two second transistors include the transistor T3, and the low level signal received by the pull-up node includes a low output of the upper-stage output node output by the transistor T3. Level signal.
  • the existing shift register further includes a transistor T4 for outputting a low level signal (off signal) to the output node of the current stage when the shift register of the stage is in the precharge stage, and the gate and the gate
  • the output signal is connected to the signal output terminal that is at a high level when the output node of the upper stage outputs a high level; therefore, the output node of the upper stage outputs a high level, and the transistor T4 is controlled by the high level signal, and the output is turned on.
  • a shutdown signal to the output node of this level.
  • the transistor T4 only needs to function in the pre-charging phase, and is in the off state in the pull-down phase. Therefore, in the specific embodiment of the present invention, the transistor T4 described above can also be multiplexed as the first pull-down. Part of the unit, namely:
  • the at least two first transistors include the transistor T2, and the low level signal received by the output node of the present stage includes an off signal output by the transistor T2.
  • the high level signal outputted by the output node of the next stage is used as a reset signal of the shift register unit of the stage, taking into account the output of the output node of the next stage.
  • the TFT for resetting in the prior art can also be multiplexed, but needs to be modified.
  • the connection relationship of the TFT is used for the second pull-down unit.
  • the signal output by the output node of the next stage is used as the pull-down signal.
  • the at least two second transistors further include a transistor.
  • the source is connected to the output node of the next stage, the drain is connected to the output node of the current stage, and the gate is connected with the signal output terminal of the output fourth control signal;
  • the low level signal received by the pull-up node includes a low level signal output by the next stage output node output by the transistor (T4).
  • the existing at least one transistor T2, ⁇ 3 or ⁇ 4 is multiplexed, and the entire shift register unit is reduced in the case of ensuring that the number of TFTs operating in each pull-down unit is sufficient.
  • the number of devices used reduces cost and implementation complexity.
  • the 7T1C shift register unit of the embodiment of the present invention includes:
  • capacitor unit C one end of the capacitor unit C is connected to the output node OUTPUT of the current stage, and the other end is connected to the pull-up node PU;
  • the transistor T1 has a source connected to the signal output terminal of the output second control signal C2, a drain connected to the output node OUTPUT of the current stage, and a gate connected to the pull-up node PU; when the output node OUTPUT of the stage needs to output a high level In the signal, since the gate of the transistor T1 is controlled by the high level signal output by the PU node, the transistor T1 is turned on, and outputs the second control signal C2 that is currently in a high state;
  • Transistor T2 the drain receives the turn-off signal VSS, the source is connected to the output node OUTPUT of the current stage, and the gate is connected to the signal output terminal of the output first control signal C1; when the upper output node N-1 OUT outputs a high level In the signal, the gate of the transistor T2 is controlled by the signal C1 in a high state, the transistor T2 is turned on, and the output off signal VSS is outputted to the output node OUTPUT of the current stage;
  • the transistor T3 has a source connected to the upper output node N-1 OUT, a drain connected to the pull-up node PU, and a gate connected to a signal output terminal outputting the first control signal C1; when the upper output node N-1 When OUT outputs a high level signal, the gate of transistor T3 is controlled by signal C1 in a high state, transistor T3 is turned on, and a high level signal output by N-1 OUT is output to the PU node for precharging.
  • the first pull-down unit for pulling down the potential of the output node OUTPUT of the present stage multiplexes the transistor T2, and uses the VSS signal to pull down the potential of the output node OUTPUT of the current stage, and is used for
  • the output low level signal pulls down the potential of the pull-up node PU, as shown in FIG. 1, the first pull-down unit includes at least two first transistors: a transistor T2;
  • Transistor T6 the drain receives the turn-off signal, the source is connected to the output node of the current stage, and the gate is connected to the signal output terminal of the output third control signal;
  • Transistor T7 the drain receives the turn-off signal, the source is connected to the output node of the current stage, and the gate is connected to the signal output terminal of the output fourth control signal;
  • the at least two second transistors included in the second pull-down unit include:
  • Transistor T4 the drain is connected to the next-stage output node, the source is connected to the pull-up node, and the gate is connected to the signal output terminal of the output fourth control signal;
  • the transistor T5 has a drain connected to a signal output terminal of the output turn-off signal, a source connected to the pull-up node, and a gate connected to a signal output terminal outputting the third control signal;
  • the signal duty ratios of the first control signal C1, the second control signal C2, the third control signal C3, and the fourth control signal C4 are 1/4, and the periods of the high level do not overlap each other;
  • the first control signal When the output node of the upper stage outputs a high level, the first control signal is at a high level; when the output node of the stage needs to output a high level signal, the second control signal is at a high level; When high, the third control signal is at a high level.
  • the duty ratios of Cl, C2, C3, and C4 are both 1/4, and the periods in which the high level is high do not overlap each other, and when the output node N-1 OUT of the upper stage outputs a high level, C1 is at a high level, and when the output node OUTPUT of this stage outputs a high level signal, C2 is at a high level, and when the next stage output node N+1 OUT outputs a high level, C3 is at a high level, and the remaining time C4 is at a high level. Level.
  • N-1 OUT is high Level
  • N+I OUT is ⁇ level.
  • Tl, ⁇ 4, ⁇ 5, ⁇ 6, ⁇ 7 are off, ⁇ 2, ⁇ 3 are on.
  • the high level signal output by N-1 OUT is output to the PU node through T3, the T1 gate is precharged, the PU point voltage rises, and T2 is turned on, and the VSS signal is output to OUTPUT, keeping OUTPUT low.
  • Pull-down sub-phase ⁇ , C3 is high, Cl, C2, C4 are low, N-1 OUT is low, and N+1 0UT is high.
  • Tl, ⁇ 2, ⁇ 3, ⁇ 4, ⁇ 7 are off, C3 control at high level T5, ⁇ 6 are turned on, respectively output low-level signals to the PU node and OUTPUT node, keeping the PU node and the OUTPUT node at a low level.
  • C4 In the pull-down sub-phase, C4 is high, Cl, C2, C3 are low, N-1 OUT is low, and N+1 0UT is low. Tl, ⁇ 2, ⁇ 3, ⁇ 5, ⁇ 6 are cut off, C4 control at high level T4, ⁇ 7 is turned on, and ⁇ 4 output is turned on to low level of N+1 OUT to the PU node, keeping the PU node at a low level. The turned-on T7 outputs a VSS low signal to the OUTPUT node, keeping the OUTPUT node low.
  • C1 is high level
  • C2, C3, C4 are low level
  • N-1 OUT is low level
  • Tl ⁇ 4, ⁇ 5, ⁇ 6, ⁇ 7 are off
  • C1 control is at high level ⁇ 2 ⁇ 3 is turned on
  • the turned-on ⁇ 3 outputs a low level of N-1 OUT to the PU node, keeping the PU node at a low level.
  • the turned-on T2 outputs a VSS low signal to the OUTPUT node, keeping the OUTPUT node low.
  • the gate of the TFT in the pull-down sub-cell is in a high state for only 1/3 of the time, and thus is in a high state state in the entire pull-down phase with respect to the prior art. , reducing the time when the gate of the TFT is in a high state, slowing down the aging speed of the TFT; in the above example, in the pull-down phase, the PU phase and the OUTPUT node are pulled down multiple times, reducing the pull-down phase The glitch of the output signal of the stage output node.
  • each of the pull-down sub-units includes three TFTs, but since these TFTs multiplex the TFTs in the existing shift registers, the overall number of devices is not increased by more than 4, which reduces the cost;
  • Embodiments of the present invention also provide a gate driving circuit including a plurality of stages of shift register units as described above.
  • FIG. 3 is a schematic structural diagram of a gate driving circuit of a shift register unit using a specific embodiment of the present invention, which includes a multi-stage shift register unit, wherein an output of a previous stage is used as an input of a next stage, and The output of the next stage is fed back to the previous level for reset.
  • Embodiments of the present invention also provide a display device including the above-described gate driving circuit.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Shift Register Type Memory (AREA)

Abstract

A shift register unit, a grid drive circuit and a display device. The shift register unit has a capacitor unit (C), an end of the capacitor unit (C) being connected to a current-stage output node (OUTPUT), and the other end thereof being connected to a pull-up node (PU). The shift register unit also comprises a first pull-down unit and a second pull-down unit, the first pull-down unit comprising at least two first transistors (T2, T6 and T7), and the second pull-down unit comprising at least two second transistors (T3, T4 and T5). When the current-stage output node (OUTPUT) is in a pull-down stage, the at least two first transistors (T2, T6 and T7) are in a conductive state under the control of respective corresponding control signals in turn to output a low-level signal in turn to the current-stage output node (OUTPUT); and when the pull-up node (PU) is in a pull-down stage, the at least two second transistors (T3, T4 and T5) are in a conductive state under the control of respective corresponding control signals in turn to output a low-level signal in turn to the pull-up node (PU).

Description

移位寄存器单元、 栅极驱动电路及显示装置 技术领域  Shift register unit, gate drive circuit and display device
本发明涉及移位寄存技术, 特别是一种移位寄存器单元、 栅极驱动电路 及显示装置。 背景技术  The present invention relates to a shift register technique, and more particularly to a shift register unit, a gate drive circuit and a display device. Background technique
集成栅极移位寄存器将栅极脉沖输出寄存器集成在面板上, 从而节省了 IC, 降低了成本。 集成栅极移位寄存器的实现方法有很多种, 可以包含不同 多个晶体管和电容, 常用的有 12T1C, 9T1C, 13T1C等结构。  The integrated gate shift register integrates the gate pulse output registers on the panel, saving IC and reducing cost. There are many ways to implement the integrated gate shift register, which can include different transistors and capacitors. The commonly used 12T1C, 9T1C, 13T1C and other structures.
一般而言, 一个移位寄存器由多级移位寄存器单元组成, 而每一级移位 寄存器单元只是在极短的时间内输出一个高电平信号, 而在其他时间都会输 出低电平信号, 通常为 VSS信号。  In general, a shift register is composed of multi-stage shift register units, and each stage shift register unit outputs a high level signal only in a very short time, and outputs a low level signal at other times. Usually the VSS signal.
现有技术的移位寄存器至少存在产品寿命较低的缺点, 对此说明如下。 前面已经提到, 每一级移位寄存器单元只是在极短的时间内输出一个高 电平信号, 而在其他时间都会输出低电平信号, 为了保证移位寄存器单元输 出低电平信号, 则需要向上拉节点和输出节点输出低电平信号,通常为 vss。 也就是说, 向上拉节点和输出节点输出低电平信号的时间非常长, 这个时间 通常占到 99%以上。  The prior art shift register has at least the disadvantage of a low product life, which is explained below. As mentioned above, each stage of the shift register unit outputs a high level signal only in a very short time, and outputs a low level signal at other times. To ensure that the shift register unit outputs a low level signal, The pull-up node and the output node need to output a low-level signal, usually vss. That is to say, the pull-up node and the output node output a low-level signal for a very long time, which usually accounts for more than 99%.
而同时, 该 VSS信号都是通过下拉晶体管输出, 这就需要下拉晶体管处 于高电平导通的状态, 以输出 VSS信号到上拉节点和输出节点。  At the same time, the VSS signal is output through the pull-down transistor, which requires the pull-down transistor to be in a high-level state to output the VSS signal to the pull-up node and the output node.
从以上描述可以发现, 下拉晶体管的栅极上长期处于高电平状态, 这就 会导致使得下拉晶体管比移位寄存器单元中的其他晶体管老化更快, 缩短了 产品的使用寿命。 发明内容  From the above description, it can be found that the gate of the pull-down transistor is in a high state for a long time, which causes the pull-down transistor to age faster than other transistors in the shift register unit, shortening the service life of the product. Summary of the invention
本发明实施例的目的在于提供一种移位寄存器单元、 栅极驱动电路及显 示装置, 提高移位寄存器的寿命。  It is an object of embodiments of the present invention to provide a shift register unit, a gate drive circuit, and a display device to improve the lifetime of the shift register.
为了实现上述目的, 本发明实施例提供了一种移位寄存器单元, 所述移 位寄存器单元具有一电容单元, 所述电容单元的一端与本级输出节点连接, 另一端与上拉节点连接, 所述移位寄存器单元还包括用于下拉所述本级输出 节点的电位的第一下拉单元以及用于下拉所述上拉节点的电位的第二下拉单 元, 所述第一下拉单元包括具有至少两个晶体管的第一组晶体管, 所述第二 下拉单元包括具有至少两个晶体管的第二组晶体管, 在所述本级输出节点处 于下拉阶段时, 所述第一组晶体管在各自对应的控制信号的控制下轮流处于 导通状态, 轮流输出低电平信号到所述本级输出节点; 在所述上拉节点处于 下拉阶段时, 所述第二组晶体管在各自对应的控制信号的控制下轮流处于导 通状态, 轮流输出低电平信号到所述上拉节点。 In order to achieve the above object, an embodiment of the present invention provides a shift register unit, wherein the shift register unit has a capacitor unit, one end of the capacitor unit is connected to the output node of the current level, and the other end is connected to the pull-up node. The shift register unit further includes a pull-down of the output of the current stage a first pull-down unit of a potential of the node and a second pull-down unit for pulling down a potential of the pull-up node, the first pull-down unit comprising a first set of transistors having at least two transistors, the second pulldown The unit includes a second group of transistors having at least two transistors. When the output node of the current stage is in a pull-down phase, the first group of transistors are turned on under the control of respective control signals, and the output is low in turn. Leveling the signal to the output node of the current stage; when the pull-up node is in the pull-down phase, the second group of transistors are turned on under the control of respective control signals, and output a low-level signal in turn Said pull up the node.
上述的移位寄存器单元, 其中, 还包括:  The shift register unit described above, further comprising:
第一晶体管 T1 , 源极与输出第二控制信号的信号输出端子连接, 漏极与 所述本级输出节点连接, 栅极与上拉节点连接; 本级输出节点需要输出高电 平信号时, 所述第二控制信号处于高电平;  The first transistor T1 has a source connected to a signal output terminal of the output second control signal, a drain connected to the output node of the current stage, and a gate connected to the pull-up node; when the output node of the stage needs to output a high level signal, The second control signal is at a high level;
第三晶体管 T3 ,源极与上一级输出节点连接,漏极与所述上拉节点连接, 栅极与一输出的信号在上一级输出节点输出高电平时处于高电平的信号输出 端子连接;  The third transistor T3 has a source connected to the upper output node, a drain connected to the pull-up node, and a gate and an output signal outputting a signal at a high level when the output node of the upper stage outputs a high level. Connection
所述第二组晶体管包括所述第三晶体管 T3 ,所述上拉节点接收到的低电 平信号中包括由所述第三晶体管 T3 输出的所述上一级输出节点输出的低电 平信号。  The second group of transistors includes the third transistor T3, and the low level signal received by the pull-up node includes a low level signal output by the upper output node output by the third transistor T3. .
上述的移位寄存器单元, 其中, 所述第二组晶体管还包括第四晶体管 T4, 漏极与下一级输出节点连接, 源极与上拉节点连接, 栅极与输出第四控 制信号的信号输出端子连接; 所述上拉节点接收到的低电平信号中包括由所 述第四晶体管 T4输出的所述下一级输出节点输出的低电平信号。  In the above shift register unit, the second group of transistors further includes a fourth transistor T4, the drain is connected to the next-stage output node, the source is connected to the pull-up node, and the gate and the signal outputting the fourth control signal are The output terminal is connected; the low level signal received by the pull-up node includes a low level signal output by the next-stage output node output by the fourth transistor T4.
上述的移位寄存器单元, 其中, 还包括:  The shift register unit described above, further comprising:
第二晶体管 T2, 漏极接收关断信号, 源极与本级输出节点连接, 栅极与 一输出的信号在上一级输出节点输出高电平时处于高电平的信号输出端子连 接;  The second transistor T2 has a drain receiving a turn-off signal, a source connected to the output node of the current stage, and a gate and an output signal connected to a signal output terminal at a high level when the output node of the upper stage outputs a high level;
所述第一组晶体管包括所述第二晶体管 T2,所述本级输出节点接收到的 低电平信号中包括由所述第二晶体管 (T2)输出的关断信号。  The first group of transistors includes the second transistor T2, and the low level signal received by the current stage output node includes an off signal output by the second transistor (T2).
上述的移位寄存器单元, 其中,  The shift register unit described above, wherein
所述第一组晶体管包括:  The first set of transistors includes:
第二晶体管 T2, 漏极接收关断信号, 源极与本级输出节点连接, 栅极与 输出第一控制信号的信号输出端子连接; 第六晶体管 T6, 漏极接收关断信号, 源极与本级输出节点连接, 栅极与 输出第三控制信号的信号输出端子连接; a second transistor T2, the drain receiving the turn-off signal, the source being connected to the output node of the current stage, and the gate being connected to the signal output terminal outputting the first control signal; a sixth transistor T6, the drain receiving the turn-off signal, the source being connected to the output node of the current stage, and the gate being connected to the signal output terminal outputting the third control signal;
第七晶体管 T7, 漏极接收关断信号, 源极与本级输出节点连接, 栅极与 输出第四控制信号的信号输出端子连接;  The seventh transistor T7 has a drain receiving a turn-off signal, a source connected to the output node of the current stage, and a gate connected to a signal output terminal outputting the fourth control signal;
所述第二组晶体管包括:  The second set of transistors includes:
第三晶体管 T3, 源极与上一级输出节点连接, 漏极与上拉节点连接, 栅 极与输出第一控制信号的信号输出端子连接;  a third transistor T3, the source is connected to the upper output node, the drain is connected to the pull-up node, and the gate is connected to the signal output terminal outputting the first control signal;
第四晶体管 T4, 漏极与下一级输出节点连接, 源极与上拉节点连接, 栅 极与输出第四控制信号的信号输出端子连接; 以及  a fourth transistor T4, the drain is connected to the next-stage output node, the source is connected to the pull-up node, and the gate is connected to the signal output terminal outputting the fourth control signal;
第五晶体管 T5, 漏极与输出关断信号的信号输出端子连接, 源极与上拉 节点连接, 栅极与输出第三控制信号的信号输出端子连接;  The fifth transistor T5 has a drain connected to the signal output terminal of the output turn-off signal, a source connected to the pull-up node, and a gate connected to the signal output terminal outputting the third control signal;
其中:  among them:
所述第一控制信号、 第二控制信号、 第三控制信号、 第四控制信号的信 号占空比为 1/4, 且处于高电平的时间段互不重叠;  The signal duty ratios of the first control signal, the second control signal, the third control signal, and the fourth control signal are 1/4, and the periods in the high level do not overlap each other;
上一级输出节点输出高电平时, 所述第一控制信号处于高电平; 本级输出节点需要输出高电平信号时, 所述第二控制信号处于高电平; 下一级输出节点输出高电平时, 所述第三控制信号处于高电平。  When the output node of the upper stage outputs a high level, the first control signal is at a high level; when the output node of the stage needs to output a high level signal, the second control signal is at a high level; When high, the third control signal is at a high level.
为了更好的实现上述目的, 本发明实施例还提供了一种栅极驱动电路, 包括多级如权利要求所述的移位寄存器单元。  In order to achieve the above objectives, an embodiment of the present invention further provides a gate driving circuit including a plurality of shift register units according to the claims.
为了更好的实现上述目的, 本发明实施例还提供了一种显示装置, 包括 上述的栅极驱动电路。  In order to achieve the above objectives, an embodiment of the present invention further provides a display device including the above-described gate driving circuit.
本发明实施例具有以下有益效果中的至少一个:  Embodiments of the invention have at least one of the following beneficial effects:
本发明实施例中, 下拉单元中的多个 TFT轮流导通(也就是栅极轮流处 于高电平控制), 因此, 在下拉阶段, 下拉晶体管的栅极仅有部分时间处于高 电平状态, 降低了下拉晶体管的栅极占空比电压, 提高了下拉晶体管的寿命, 从而提高了整个移位寄存器单元的寿命。  In the embodiment of the present invention, the plurality of TFTs in the pull-down unit are turned on in turn (that is, the gate turns are in a high level control). Therefore, in the pull-down phase, the gate of the pull-down transistor is only in a high state for a part of time. The gate duty cycle voltage of the pull-down transistor is lowered, the life of the pull-down transistor is increased, and the lifetime of the entire shift register unit is improved.
本发明实施例中, 下拉单元中的多个 TFT轮流导通输出低电平信号到待 下拉节点, 对待下拉节点进行多次下拉, 减少了下拉阶段移位寄存器单元输 出信号的毛刺;  In the embodiment of the present invention, the plurality of TFTs in the pull-down unit are turned on to output a low-level signal to the node to be pulled down, and the pull-down node is pulled down multiple times to reduce the glitch of the output signal of the shift register unit in the pull-down phase;
本发明实施例中, 下拉单元中的多个 TFT中的部分是复用移位寄存器单 元中的已有 TFT, 减少了器件数量, 降低了成本, 也使得本发明实施例的移 位寄存器单元有利于实现更窄的面板边框。 附图说明 In the embodiment of the present invention, a part of the plurality of TFTs in the pull-down unit is an existing TFT in the multiplexed shift register unit, which reduces the number of components, reduces the cost, and also shifts the embodiment of the present invention. The bit register unit facilitates a narrower panel border. DRAWINGS
图 1表示本发明实施例的移位寄存器单元的结构示意图;  1 is a block diagram showing the structure of a shift register unit according to an embodiment of the present invention;
图 2表示图 1所示的移位寄存器单元的信号时序图;  Figure 2 is a timing chart showing the signal of the shift register unit shown in Figure 1;
图 3表示本发明实施例的移位寄存器的结构示意图。 具体实施方式  FIG. 3 is a block diagram showing the structure of a shift register according to an embodiment of the present invention. detailed description
本发明实施例的移位寄存器单元、 栅极驱动电路及显示装置中, 每个待 下拉节点 (本级输出节点以及上拉节点)对应的下拉单元均包括至少两个 TFT, 使得在待下拉节点需要被低电平信号控制时, 下拉单元包括的至少两 个 TFT可以轮流处于导通状态, 输出低电平信号到待下拉节点, 降低下拉单 元中的 TFT栅极在高电平状态下工作的时间,减緩下拉单元中的 TFT的老化 速度, 提高整个移位寄存器单元的使用寿命。  In the shift register unit, the gate driving circuit and the display device of the embodiment of the invention, each of the pull-down units corresponding to the node to be pulled down (the output node of the current stage and the pull-up node) includes at least two TFTs, so that the node to be pulled down When it is required to be controlled by the low level signal, at least two TFTs included in the pull-down unit may be turned on in turn, output a low level signal to the node to be pulled down, and reduce the TFT gate in the pull-down unit to operate in a high level state. Time, slowing down the aging speed of the TFT in the pull-down unit and increasing the service life of the entire shift register unit.
在对本发明实施例进行进一步详细说明之前, 先对本发明实施例涉及到 的概念说明如下。  Before the embodiments of the present invention are further described in detail, the concepts related to the embodiments of the present invention are described below.
以第 n级移位寄存器单元为例, 其工作过程如下, 其一般分为如下 4个 阶段:  Taking the nth stage shift register unit as an example, the working process is as follows, which is generally divided into the following four stages:
阶段 A, 第 n-1级输出节点 n-1输出高电平,此时利用上一级输出节点输 出的高电平信号初步拉高 PU节点的电平;  Stage A, the n-1th output node n-1 outputs a high level, at which time the level of the PU node is initially raised by the high level signal outputted by the output node of the upper stage;
阶段 B, 继续拉高的 PU节点打开一个 TFT, 将高电平信号输出到本级 输出节点, 使得第 n级移位寄存器单元的输出节点输出高电平信号;  In stage B, the PU node that continues to be raised opens a TFT, and outputs a high level signal to the output node of the current stage, so that the output node of the nth stage shift register unit outputs a high level signal;
阶段 C, 第 n+1级输出节点输出高电平信号, 第 n级移位寄存器单元的 PU节点和本级输出节点受低电平信号拉低;  In stage C, the output node of the n+1th stage outputs a high level signal, and the PU node of the nth stage shift register unit and the output node of the current stage are pulled low by the low level signal;
阶段 D, 直至下一次第 n-1级输出节点 n-1输出高电平之前, 第 n级移位 寄存器单元的 PU节点和本级输出节点受低电平信号拉低。  In phase D, until the next n-1th output node n-1 outputs a high level, the PU node of the nth stage shift register unit and the output node of the current stage are pulled low by the low level signal.
在本发明的具体实施例中, 该下拉阶段指的是阶段 C和阶段 D, 即除本 级输出节点和上一级输出节点输出高电平信号的阶段之外的时间。  In a particular embodiment of the invention, the pull down phase refers to phase C and phase D, i.e., the time other than the stage in which the output node of the primary stage and the output node of the upper stage output a high level signal.
本发明实施例的移位寄存器单元中具有一电容单元, 所述电容单元的一 端与本级输出节点连接, 另一端与上拉节点连接, 所述移位寄存器单元还包 括用于下拉所述本级输出节点的电位的第一下拉单元以及用于下拉所述上拉 节点的电位的第二下拉单元, 其中, 所述第一下拉单元包括至少两个第一晶 体管, 所述第二下拉单元包括至少两个第二晶体管, 在所述本级输出节点处 于需要受低电平信号控制的下拉阶段时, 所述至少两个第一晶体管在各自对 应的控制信号的控制下轮流处于导通状态, 轮流输出低电平信号到所述本级 输出节点; 在所述上拉节点处于需要受低电平信号控制的下拉阶段时, 所述 至少两个第二晶体管在各自对应的控制信号的控制下轮流处于导通状态, 轮 流输出低电平信号到所述上拉节点。 The shift register unit of the embodiment of the invention has a capacitor unit, one end of the capacitor unit is connected to the output node of the current stage, and the other end is connected to the pull-up node, and the shift register unit further includes a pull-down unit for a first pull-down unit of the potential of the stage output node and for pulling up the pull-up a second pull-down unit of a potential of the node, wherein the first pull-down unit includes at least two first transistors, and the second pull-down unit includes at least two second transistors, where the output node of the current stage is in need of During the pull-down phase of the low-level signal control, the at least two first transistors are turned on in turn under the control of respective control signals, and alternately output a low-level signal to the output node of the current stage; When the pull-up node is in a pull-down phase that needs to be controlled by the low-level signal, the at least two second transistors are turned on under the control of respective control signals, and the low-level signal is alternately outputted to the pull-up node.
在此, 首先应该说明的是, 在下拉阶段轮流处于导通状态包括如下的各 种情况:  Here, first of all, it should be noted that the turn-on phase in the pull-down phase includes the following cases:
1、 轮流处于导通状态, 且在时间上连续分布; 这种分布在独立设计下拉 单元时容易实现。  1. The turns are in the on state and continuously distributed in time; this distribution is easy to implement when designing the pull-down unit independently.
2、 轮流处于导通状态, 但在时间上不连续分布。 这种分布在需要复用现 有移位寄存器单元中的 TFT时会出现, 如将在后面提到的 7T1C的移位寄存 器。  2. The turns are in the on state, but they are not continuously distributed in time. This distribution occurs when a TFT in an existing shift register unit needs to be multiplexed, as will be mentioned later in the 7T1C shift register.
本发明实施例的移位寄存器单元中, 由于每个下拉单元中设置有多个 In the shift register unit of the embodiment of the present invention, since each of the pull-down units is provided with multiple
TFT, 这些 TFT轮流导通(也就是栅极轮流处于高电平控制), 以轮流输出低 电平信号到对应的节点。 相对于现有技术的在待下拉节点需要受低电平信号 控制时, 下拉晶体管的栅极要一直处于高电平状态而言, 本发明实施例的下 拉单元中的 TFT仅有部分时间处于高电平状态, 降低了下拉晶体管的栅极占 空比电压, 提高了下拉晶体管的寿命, 从而提高了整个移位寄存器单元的寿 命。 TFTs, these TFTs are turned on in turn (that is, the gate turns in a high level control) to alternately output a low level signal to the corresponding node. Compared with the prior art, when the gate to be pulled down needs to be controlled by the low level signal, the gate of the pull-down transistor is always in a high state, and the TFT in the pull-down unit of the embodiment of the present invention is only partially high. The level state lowers the gate duty cycle voltage of the pull-down transistor, increasing the lifetime of the pull-down transistor, thereby increasing the lifetime of the entire shift register unit.
以本级输出节点对应的下拉单元举例说明如下。  The following figure is taken as an example of the pull-down unit corresponding to the output node of this level.
假定栅极驱动电路包括 1024级移位寄存器单元, 则按照现有技术的方 法, 则下拉晶体管在工作时间内, 99.9% ( 1023/1024 ) 以上的时间栅极都处 于高电平信号的控制下。  Assuming that the gate driving circuit includes a 1024-stage shift register unit, according to the prior art method, the pull-down transistor is under the control of a high level signal during a working time of 99.9% (1023/1024) or more. .
而假定本发明实施例的方法中, 2个 TFT并联, 其源极接 VSS信号, 而 漏极与本级输出节点连接, 则当本级输出节点需要处于低电平信号控制时, 则通过控制输出到 2个 TFT的栅极的信号轮流以时间间隔 T处于高电平, 则 能够保证 VSS信号持续不断输出到本级输出节点, 同时, 当本级输出节点需 要处于低电平信号控制时, 每个 TFT的栅极仅有部分时间处于高电平信号的 控制下, 因此降低了晶体管的老化速度, 从而提高了整个移位寄存器单元的 寿命。 It is assumed that in the method of the embodiment of the present invention, two TFTs are connected in parallel, the source thereof is connected to the VSS signal, and the drain is connected to the output node of the current stage, then when the output node of the current stage needs to be in the low level signal control, then the control is performed. The signals output to the gates of the two TFTs are alternately held at a high interval T at a time interval T, so that the VSS signal can be continuously outputted to the output node of the current stage, and at the same time, when the output node of the current stage needs to be under the control of the low level signal, The gate of each TFT is only under partial control of the high level signal, thus reducing the aging speed of the transistor, thereby improving the overall shift register unit. Life expectancy.
同时, 在本发明的具体实施例中, 在整个下拉阶段, 会对 PU节点和本 级输出节点进行多次下拉, 能够减小移位寄存器单元输出信号的毛刺。  In the meantime, in the specific embodiment of the present invention, the PU node and the output node of the current stage are pulled down multiple times during the entire pull-down phase, which can reduce the glitch of the output signal of the shift register unit.
在本发明的具体实施例中, 第一下拉单元和第二下拉单元具体可以通过 多种方式实现, 说明如下。  In a specific embodiment of the present invention, the first pull-down unit and the second pull-down unit may be specifically implemented in various manners, as explained below.
<实施方式一 >  <Embodiment 1>
第一下拉单元和第二下拉单元各自独立工作,具有各自独立的控制信号。 如第一下拉单元和第二下拉单元的 TFT数量可以相同, 也可以不同。 如第一下拉单元具有 3个 TFT, 源极接收 VSS信号, 而漏极与本级输出 节点连接, 而第二下拉单元具有 2个 TFT, 源极均接收 VSS信号, 而漏极与 上拉节点连接。  The first pull down unit and the second pull down unit each operate independently and have respective independent control signals. The number of TFTs of the first pull-down unit and the second pull-down unit may be the same or different. For example, the first pull-down unit has three TFTs, the source receives the VSS signal, and the drain is connected to the output node of the current stage, and the second pull-down unit has two TFTs, the source receives the VSS signal, and the drain and the pull-up Node connection.
优选地:  Preferably:
第一下拉单元的 3个 TFT各自对应的 3个控制信号的高电平信号互不重 叠, 但在本级输出节点的整个下拉阶段内连续分布。  The high-level signals of the three control signals corresponding to the three TFTs of the first pull-down unit do not overlap each other, but are continuously distributed throughout the pull-down phase of the output node of the current stage.
第二下拉单元的 2个 TFT各自对应的 2个控制信号的高电平信号互不重 叠, 但在上拉节点的整个下拉阶段内连续分布。  The high level signals of the two control signals corresponding to the two TFTs of the second pull-down unit do not overlap each other, but are continuously distributed throughout the pull-down phase of the pull-up node.
而这些控制信号可以占空比相同, 也可以占空比不同, 如第二下拉单元 的 2个 TFT各自对应的 2个控制信号 XI和 X2的高电平信号互不重叠, 且 在本级输出节点需要输出低电平信号的时间段内连续分布, 但 XI的高电平 持续时间比 XI的高电平持续时间长。  The control signals may have the same duty ratio or different duty ratios. For example, the two control signals XI and X2 of the two TFTs of the second pull-down unit do not overlap each other, and are output at the same level. The node needs to continuously distribute the low-level signal for a period of time, but the high-level duration of XI is longer than the high-level duration of XI.
<实施方式二 >  <Embodiment 2>
对于实施方式一而言, 每个下拉单元各自独立工作, 不利于控制信号的 统筹安排, 同时也需要更多的控制信号, 会导致结构复杂。  For the first embodiment, each of the pull-down units work independently, which is not conducive to the overall arrangement of the control signals, and also requires more control signals, which leads to a complicated structure.
在实施方式二中, 下拉单元中 TFT数量相同, 因此可以将不同下拉单元 中的 TFT两两分组,每一组 TFT使用相同的控制信号, 所有这些控制信号的 高电平分布区间互不重叠, 但在本级输出节点和上拉节点需要同时受低电平 信号控制的时间段内连续分布即可。  In the second embodiment, the number of TFTs in the pull-down unit is the same, so the TFTs in different pull-down units can be grouped into two groups, and each group of TFTs uses the same control signal, and the high-level distribution intervals of all the control signals do not overlap each other. However, the output node and the pull-up node of the current stage need to be continuously distributed within a time period controlled by the low-level signal.
当然, 本发明实施例中的下拉单元的实现并不限于以上的实现方式, 本 领域技术人员可以根据本发明实施例的记载通过其它方式来实现上述的下拉 单元, 在此不——详细描述。  Of course, the implementation of the pull-down unit in the embodiment of the present invention is not limited to the above implementation manner, and those skilled in the art may implement the above-mentioned pull-down unit in other manners according to the description of the embodiments of the present invention, which is not described in detail.
在本发明的具体实施例中, 上述的移位寄存器单元还包括其它的 TFT器 件, 如在上一级输出节点输出高电平信号时处于导通并将该高电平信号输出 到 PU节点以进行预充电的 TFT, 又如在预充电阶段, 将一低电平信号输出 到本级输出节点的 TFT。 In a specific embodiment of the present invention, the above shift register unit further includes other TFTs a device, such as a TFT that is turned on when the output node of the upper stage outputs a high level signal and outputs the high level signal to the PU node for precharging, and, as in the precharge phase, outputs a low level signal. The TFT to the output node of this level.
在本发明的具体实施例中, 上述的下拉单元可以在上述已有元件的基础 上增加新的 TFT来实现, 但这必将增加 TFT的数量, 增加实现的复杂度。  In the specific embodiment of the present invention, the above-mentioned pull-down unit can be implemented by adding a new TFT to the existing components, but this will increase the number of TFTs and increase the complexity of implementation.
因此, 在本发明的具体实施例中, 进一步考虑复用已有的 TFT来作为下 拉单元中的 TFT, 以减少 TFT的数量。  Therefore, in a specific embodiment of the present invention, further multiplexing of an existing TFT as a TFT in a pull-down unit is further considered to reduce the number of TFTs.
在本发明具体实施例中, 可以复用已有 TFT中的一个或多个来降低移位 寄存器单元使用 TFT的数量, 在此就其中几种实施方式说明如下。  In a particular embodiment of the invention, one or more of the existing TFTs may be multiplexed to reduce the number of TFTs used by the shift register unit, several of which are described below.
现有的移位寄存器单元中, 包括一用于在上一级输出节点输出高电平信 号时将上一级输出节点输出的高电平信号输出到上拉节点进行预充电的晶体 管 T3, 其源极与上一级输出节点连接, 漏极与所述上拉节点连接, 栅极与一 输出的信号在上一级输出节点输出高电平时处于高电平的信号输出端子连 接;  The existing shift register unit includes a transistor T3 for outputting a high level signal outputted by the upper stage output node to the pull-up node for pre-charging when the upper stage output node outputs a high level signal, The source is connected to the upper output node, the drain is connected to the pull-up node, and the gate and an output signal are connected at a signal output terminal that is at a high level when the output node of the upper stage outputs a high level;
考虑到本级移位寄存器单元处于下拉阶段时, 上一级移位寄存器单元必 然输出低电平信号, 基于以上考虑, 在本发明具体实施例中, 复用上述的晶 体管 T3作为第二下拉单元的一部分, 即: 所述至少两个第二晶体管包括所述 晶体管 T3 , 所述上拉节点接收到的低电平信号中包括由所述晶体管 T3输出 的所述上一级输出节点输出的低电平信号。  Considering that the shift register unit of the first stage is in the pull-down phase, the shift register unit of the first stage necessarily outputs a low level signal. Based on the above considerations, in the specific embodiment of the present invention, the transistor T3 is multiplexed as the second pull-down unit. a part of the circuit, that is, the at least two second transistors include the transistor T3, and the low level signal received by the pull-up node includes a low output of the upper-stage output node output by the transistor T3. Level signal.
现有的移位寄存器中, 还包括一用于在本级移位寄存器处于预充电阶段 时, 输出一低电平信号(关断信号)到本级输出节点的晶体管 T4, 其栅极与 一输出的信号在上一级输出节点输出高电平时处于高电平的信号输出端子连 接; 因此, 上一级输出节点输出高电平, 晶体管 T4受到高电平信号的控制处 于导通状态, 输出一关断信号到本级输出节点。  The existing shift register further includes a transistor T4 for outputting a low level signal (off signal) to the output node of the current stage when the shift register of the stage is in the precharge stage, and the gate and the gate The output signal is connected to the signal output terminal that is at a high level when the output node of the upper stage outputs a high level; therefore, the output node of the upper stage outputs a high level, and the transistor T4 is controlled by the high level signal, and the output is turned on. A shutdown signal to the output node of this level.
在现有技术中,该晶体管 T4仅需要在预充电阶段起作用, 而在下拉阶段 处于截止状态, 因此,在本发明具体实施例中,还可以复用上述的晶体管 T4, 作为第一下拉单元的一部分, 即:  In the prior art, the transistor T4 only needs to function in the pre-charging phase, and is in the off state in the pull-down phase. Therefore, in the specific embodiment of the present invention, the transistor T4 described above can also be multiplexed as the first pull-down. Part of the unit, namely:
所述至少两个第一晶体管包括所述晶体管 T2, 所述本级输出节点接收到 的低电平信号中包括由所述晶体管 T2输出的关断信号。  The at least two first transistors include the transistor T2, and the low level signal received by the output node of the present stage includes an off signal output by the transistor T2.
在现有技术的移位寄存器单元, 下一级输出节点输出的高电平信号是作 为本级移位寄存器单元的复位信号来使用, 考虑到下一级输出节点输出的信 号在本级移位寄存器单元的拉低阶段, 绝大部分时间处于低电平状态, 因此 在本发明的具体实施例中, 还可以复用现有技术中用于复位的 TFT, 但需要 修改 TFT的连接关系后用于第二下拉单元,修改后的 TFT中,使用下一级输 出节点输出的信号作为拉低信号使用, 这种实施方式下, 所述至少两个第二 晶体管还包括晶体管 T4, 源极与下一级输出节点连接, 漏极与本级输出节点 连接, 栅极与输出第四控制信号的信号输出端子连接; 所述上拉节点接收到 的低电平信号中包括由所述晶体管 (T4)输出的所述下一级输出节点输出的低 电平信号。 In the prior art shift register unit, the high level signal outputted by the output node of the next stage is used as a reset signal of the shift register unit of the stage, taking into account the output of the output node of the next stage. In the pull-down phase of the shift register unit of the current stage, most of the time is in a low state, so in the specific embodiment of the present invention, the TFT for resetting in the prior art can also be multiplexed, but needs to be modified. The connection relationship of the TFT is used for the second pull-down unit. In the modified TFT, the signal output by the output node of the next stage is used as the pull-down signal. In this embodiment, the at least two second transistors further include a transistor. T4, the source is connected to the output node of the next stage, the drain is connected to the output node of the current stage, and the gate is connected with the signal output terminal of the output fourth control signal; the low level signal received by the pull-up node includes a low level signal output by the next stage output node output by the transistor (T4).
上述的各种实施方式下, 复用了已有的至少一个晶体管 T2、 Τ3或 Τ4, 在保证每个下拉单元中的轮流工作的 TFT数量足够的情况下, 减小了整个移 位寄存器单元的器件使用数量, 降低了成本和实现复杂度。  In the above various embodiments, the existing at least one transistor T2, Τ3 or Τ4 is multiplexed, and the entire shift register unit is reduced in the case of ensuring that the number of TFTs operating in each pull-down unit is sufficient. The number of devices used reduces cost and implementation complexity.
下面以 4个控制信号实现的 7T1C移位寄存器单元来详细说明本发明实 施例的移位寄存器单元的工作过程与结构。  The operation and structure of the shift register unit of the embodiment of the present invention will be described in detail below with the 7T1C shift register unit implemented by four control signals.
如图 1所示, 本发明实施例的 7T1C移位寄存器单元包括:  As shown in FIG. 1, the 7T1C shift register unit of the embodiment of the present invention includes:
一本级输出节点 OUTPUT;  a level output node OUTPUT;
电容单元 C, 所述电容单元 C的一端与本级输出节点 OUTPUT连接, 另 一端与上拉节点 PU连接;  a capacitor unit C, one end of the capacitor unit C is connected to the output node OUTPUT of the current stage, and the other end is connected to the pull-up node PU;
晶体管 T1 , 源极与输出第二控制信号 C2的信号输出端子连接, 漏极与 所述本级输出节点 OUTPUT连接, 栅极与上拉节点 PU连接; 当本级输出节 点 OUTPUT需要输出高电平信号时, 由于晶体管 T1的栅极受 PU节点输出 的高电平信号的控制, 晶体管 T1导通,输出当前处于高电平状态的第二控制 信号 C2;  The transistor T1 has a source connected to the signal output terminal of the output second control signal C2, a drain connected to the output node OUTPUT of the current stage, and a gate connected to the pull-up node PU; when the output node OUTPUT of the stage needs to output a high level In the signal, since the gate of the transistor T1 is controlled by the high level signal output by the PU node, the transistor T1 is turned on, and outputs the second control signal C2 that is currently in a high state;
晶体管 T2, 漏极接收关断信号 VSS, 源极与本级输出节点 OUTPUT连 接, 栅极与输出第一控制信号 C1的信号输出端子连接; 当上一级输出节点 N-1 OUT输出高电平信号时, 晶体管 T2的栅极受处于高电平状态的信号 C1 控制, 晶体管 T2导通, 输出关断信号 VSS到本级输出节点 OUTPUT;  Transistor T2, the drain receives the turn-off signal VSS, the source is connected to the output node OUTPUT of the current stage, and the gate is connected to the signal output terminal of the output first control signal C1; when the upper output node N-1 OUT outputs a high level In the signal, the gate of the transistor T2 is controlled by the signal C1 in a high state, the transistor T2 is turned on, and the output off signal VSS is outputted to the output node OUTPUT of the current stage;
晶体管 T3 , 源极与上一级输出节点 N- 1 OUT连接, 漏极与上拉节点 PU 连接,栅极与输出第一控制信号 C1的信号输出端子连接; 当上一级输出节点 N-1 OUT输出高电平信号时, 晶体管 T3的栅极受处于高电平状态的信号 C1 控制, 晶体管 T3导通, 输出 N-1 OUT输出的高电平信号到 PU节点进行预 充电。 在本发明的具体实施例中,用于下拉所述本级输出节点 OUTPUT的电位 的第一下拉单元复用了晶体管 T2,并使用 VSS信号对本级输出节点 OUTPUT 的电位进行下拉, 而用于下拉所述上拉节点 PU的电位的第二下拉单元复用 了晶体管 T3, 并使用 VSS信号、 上一级输出节点 N-1 OUT输出的低电平信 号以及下一级输出节点 N+1 OUT输出的低电平信号对上拉节点 PU的电位进 行下拉, 如图 1所示, 所述第一下拉单元包括的至少两个第一晶体管为: 晶体管 T2; The transistor T3 has a source connected to the upper output node N-1 OUT, a drain connected to the pull-up node PU, and a gate connected to a signal output terminal outputting the first control signal C1; when the upper output node N-1 When OUT outputs a high level signal, the gate of transistor T3 is controlled by signal C1 in a high state, transistor T3 is turned on, and a high level signal output by N-1 OUT is output to the PU node for precharging. In a specific embodiment of the present invention, the first pull-down unit for pulling down the potential of the output node OUTPUT of the present stage multiplexes the transistor T2, and uses the VSS signal to pull down the potential of the output node OUTPUT of the current stage, and is used for The second pull-down unit that pulls down the potential of the pull-up node PU multiplexes the transistor T3, and uses the VSS signal, the low-level signal outputted by the upper-stage output node N-1 OUT, and the next-stage output node N+1 OUT The output low level signal pulls down the potential of the pull-up node PU, as shown in FIG. 1, the first pull-down unit includes at least two first transistors: a transistor T2;
晶体管 T6, 漏极接收关断信号, 源极与本级输出节点连接, 栅极与输出 第三控制信号的信号输出端子连接;  Transistor T6, the drain receives the turn-off signal, the source is connected to the output node of the current stage, and the gate is connected to the signal output terminal of the output third control signal;
晶体管 T7, 漏极接收关断信号, 源极与本级输出节点连接, 栅极与输出 第四控制信号的信号输出端子连接;  Transistor T7, the drain receives the turn-off signal, the source is connected to the output node of the current stage, and the gate is connected to the signal output terminal of the output fourth control signal;
所述第二下拉单元包括的至少两个第二晶体管包括:  The at least two second transistors included in the second pull-down unit include:
晶体管 T3;  Transistor T3;
晶体管 T4, 漏极与下一级输出节点连接, 源极与上拉节点连接, 栅极与 输出第四控制信号的信号输出端子连接;  Transistor T4, the drain is connected to the next-stage output node, the source is connected to the pull-up node, and the gate is connected to the signal output terminal of the output fourth control signal;
晶体管 T5, 漏极与输出关断信号的信号输出端子连接, 源极与上拉节点 连接, 栅极与输出第三控制信号的信号输出端子连接;  The transistor T5 has a drain connected to a signal output terminal of the output turn-off signal, a source connected to the pull-up node, and a gate connected to a signal output terminal outputting the third control signal;
其中:  among them:
所述第一控制信号 Cl、 第二控制信号 C2、 第三控制信号 C3、 第四控制 信号 C4的信号占空比为 1/4, 且处于高电平的时间段互不重叠;  The signal duty ratios of the first control signal C1, the second control signal C2, the third control signal C3, and the fourth control signal C4 are 1/4, and the periods of the high level do not overlap each other;
上一级输出节点输出高电平时, 所述第一控制信号处于高电平; 本级输出节点需要输出高电平信号时, 所述第二控制信号处于高电平; 下一级输出节点输出高电平时, 所述第三控制信号处于高电平。  When the output node of the upper stage outputs a high level, the first control signal is at a high level; when the output node of the stage needs to output a high level signal, the second control signal is at a high level; When high, the third control signal is at a high level.
下面结合图 2所示的信号时序图对上述的 7T1C移位寄存器单元的工作 过程详细说明如下。  The operation of the above 7T1C shift register unit will be described in detail below with reference to the signal timing diagram shown in FIG.
首先, 可以发现, Cl、 C2、 C3和 C4的信号占空比均为 1/4, 且处于高 电平的时间段互不重叠, 而上一级输出节点 N-1 OUT输出高电平时, C1处 于高电平, 而本级输出节点 OUTPUT输出高电平信号时, C2处于高电平, 下一级输出节点 N+1 OUT输出高电平时, C3处于高电平,其余时间 C4处于 高电平。  First, it can be found that the duty ratios of Cl, C2, C3, and C4 are both 1/4, and the periods in which the high level is high do not overlap each other, and when the output node N-1 OUT of the upper stage outputs a high level, C1 is at a high level, and when the output node OUTPUT of this stage outputs a high level signal, C2 is at a high level, and when the next stage output node N+1 OUT outputs a high level, C3 is at a high level, and the remaining time C4 is at a high level. Level.
在预充电阶段 Φ , C1为高电平, C2、 C3、 C4为低电平, N-1 OUT为高 电平, N+I OUT为氐电平。 JHI时, Tl、 Τ4、 Τ5、 Τ6、 Τ7截止, Τ2、 Τ3导通。 则 N-1 OUT输出的高电平信号通过 T3输出到 PU节点, 对 T1栅极进行预充 电, PU点电压上升, 而 T2导通, 输出 VSS信号到 OUTPUT, 保持 OUTPUT 处于低电平。 In the pre-charging phase Φ, C1 is high, C2, C3, C4 are low, N-1 OUT is high Level, N+I OUT is 氐 level. At JHI, Tl, Τ4, Τ5, Τ6, Τ7 are off, Τ2, Τ3 are on. Then, the high level signal output by N-1 OUT is output to the PU node through T3, the T1 gate is precharged, the PU point voltage rises, and T2 is turned on, and the VSS signal is output to OUTPUT, keeping OUTPUT low.
在上拉阶段 <2 , C2为高电平、 Cl、 C3、 C4为低电平, N-1 OUT为低电 平, N+1 0UT为低电平。 T2、 Τ3、 Τ4、 Τ5、 Τ6、 Τ7截止, 而 PU点电位继 续升高, T1导通, 处于高电平的 C2通过 T1输出到 OUTPUT。  In the pull-up phase <2, C2 is high, Cl, C3, C4 are low, N-1 OUT is low, and N+1 0UT is low. T2, Τ3, Τ4, Τ5, Τ6, Τ7 are cut off, and the potential of the PU point continues to rise, T1 is turned on, and C2 at the high level is output to OUTPUT through T1.
下拉子阶段 Θ , C3为高电平、 Cl、 C2、 C4为低电平, N-1 OUT为低 电平, N+1 0UT为高电平。 Tl、 Τ2、 Τ3、 Τ4、 Τ7截止, 处于高电平的 C3 控制 T5、 Τ6导通, 分别输出低电平信号到 PU节点和 OUTPUT节点, 保持 PU节点和 OUTPUT节点处于低电平。  Pull-down sub-phase Θ , C3 is high, Cl, C2, C4 are low, N-1 OUT is low, and N+1 0UT is high. Tl, Τ2, Τ3, Τ4, Τ7 are off, C3 control at high level T5, Τ6 are turned on, respectively output low-level signals to the PU node and OUTPUT node, keeping the PU node and the OUTPUT node at a low level.
下拉子阶段 , C4为高电平, Cl、 C2、 C3为低电平, N-1 OUT为低电 平, N+1 0UT为低电平。 Tl、 Τ2、 Τ3、 Τ5、 Τ6截止, 处于高电平的 C4控 制 T4、 Τ7导通, 导通的 Τ4输出 N+1 OUT的低电平到 PU节点, 保持 PU节 点处于低电平。 而导通的 T7输出 VSS低电平信号到 OUTPUT节点, 保持 OUTPUT节点处于低电平。  In the pull-down sub-phase, C4 is high, Cl, C2, C3 are low, N-1 OUT is low, and N+1 0UT is low. Tl, Τ2, Τ3, Τ5, Τ6 are cut off, C4 control at high level T4, Τ7 is turned on, and 导4 output is turned on to low level of N+1 OUT to the PU node, keeping the PU node at a low level. The turned-on T7 outputs a VSS low signal to the OUTPUT node, keeping the OUTPUT node low.
下拉子阶段 6) , C1为高电平, C2、 C3、 C4为低电平, N-1 OUT为低电 平, Tl、 Τ4、 Τ5、 Τ6、 Τ7截止, 处于高电平的 C1控制 Τ2、 Τ3导通, 导通 的 Τ3输出 N-1 OUT的低电平到 PU节点, 保持 PU节点处于低电平。 而导通 的 T2输出 VSS低电平信号到 OUTPUT节点, 保持 OUTPUT节点处于低电 平。  Pull-down sub-stage 6), C1 is high level, C2, C3, C4 are low level, N-1 OUT is low level, Tl, Τ4, Τ5, Τ6, Τ7 are off, C1 control is at high level Τ2 Τ3 is turned on, and the turned-on Τ3 outputs a low level of N-1 OUT to the PU node, keeping the PU node at a low level. The turned-on T2 outputs a VSS low signal to the OUTPUT node, keeping the OUTPUT node low.
上述过程 3) - - ®循环往复(可以发现,上述过程就是本发明实施例之前 提到的在时间上不连续分布的情况, 但这并不影响 PU节点和 OUTPUT节点 在整个下拉阶段处于低电平 ),直至下一次上一级输出节点 N-10UT输出高电 平。  The above process 3) - - ® cycle back and forth (it can be found that the above process is the case of discontinuous distribution in time mentioned before the embodiment of the present invention, but this does not affect the PU node and the OUTPUT node are in low power throughout the pull-down phase. Flat) until the next higher output node N-10UT outputs a high level.
下面结合上述的例子说明本发明实施例的有益效果如下。  The beneficial effects of the embodiments of the present invention will be described below in conjunction with the above examples.
在上述的例子中, 在下拉阶段, 下拉子单元中的 TFT的栅极仅有 1/3的 时间处于高电平状态, 因此相对于现有技术的在整个下拉阶段处于高电平状 态而言,降低了 TFT的栅极处于高电平状态的时间,减緩了 TFT老化的速度; 在上述的例子中, 在下拉阶段, 对 PU阶段和 OUTPUT节点进行了多次 下拉, 减少了下拉阶段本级输出节点输出信号的毛刺。 在上述的例子中, 每个下拉子单元均包括 3个 TFT, 但由于这些 TFT复 用了现有移位寄存器中的 TFT, 因此, 整体器件数量增加并不是 4艮多, 降低 成本; In the above example, in the pull-down phase, the gate of the TFT in the pull-down sub-cell is in a high state for only 1/3 of the time, and thus is in a high state state in the entire pull-down phase with respect to the prior art. , reducing the time when the gate of the TFT is in a high state, slowing down the aging speed of the TFT; in the above example, in the pull-down phase, the PU phase and the OUTPUT node are pulled down multiple times, reducing the pull-down phase The glitch of the output signal of the stage output node. In the above example, each of the pull-down sub-units includes three TFTs, but since these TFTs multiplex the TFTs in the existing shift registers, the overall number of devices is not increased by more than 4, which reduces the cost;
本发明实施例还提供了一种栅极驱动电路, 包括多级如上所述的移位寄 存器单元。  Embodiments of the present invention also provide a gate driving circuit including a plurality of stages of shift register units as described above.
如图 3所示, 为利用本发明具体实施例的移位寄存器单元的栅极驱动电 路的结构示意图, 其包括多级移位寄存器单元, 其中上一级的输出作为下一 级的输入, 同时下一级的输出又反馈回上一级进行重置。  3 is a schematic structural diagram of a gate driving circuit of a shift register unit using a specific embodiment of the present invention, which includes a multi-stage shift register unit, wherein an output of a previous stage is used as an input of a next stage, and The output of the next stage is fed back to the previous level for reset.
本发明实施例还提供了一种显示装置, 包括上述的栅极驱动电路。  Embodiments of the present invention also provide a display device including the above-described gate driving circuit.
以上说明对本发明而言只是说明性的, 而非限制性的, 本领域普通技术 人员理解, 在不脱离所附权利要求所限定的精神和范围的情况下, 可做出许 多修改、 变化或等效, 但都将落入本发明的保护范围内。  The above description is intended to be illustrative, and not restrictive, and many modifications, variations, etc. may be made without departing from the spirit and scope of the appended claims. Effective, but all fall within the scope of protection of the present invention.

Claims

权 利 要 求 书 Claim
1. 一种移位寄存器单元, 所述移位寄存器单元具有一电容单元, 所述电 容单元的一端与本级输出节点连接, 另一端与上拉节点连接, 所述移位寄存 器单元还包括用于下拉所述本级输出节点的电位的第一下拉单元以及用于下 拉所述上拉节点的电位的第二下拉单元, 其中, 所述第一下拉单元包括具有 至少两个晶体管的第一组晶体管, 所述第二下拉单元包括具有至少两个晶体 管的第二组晶体管, 在所述本级输出节点处于下拉阶段时, 所述第一组晶体 管在各自对应的控制信号的控制下轮流处于导通状态, 轮流输出低电平信号 到所述本级输出节点; 在所述上拉节点处于下拉阶段时, 所述第二组晶体管 在各自对应的控制信号的控制下轮流处于导通状态, 轮流输出低电平信号到 所述上拉节点。 A shift register unit, the shift register unit has a capacitor unit, one end of the capacitor unit is connected to an output node of the current stage, and the other end is connected to a pull-up node, and the shift register unit further includes a first pull-down unit for pulling down a potential of the output node of the current stage and a second pull-down unit for pulling down a potential of the pull-up node, wherein the first pull-down unit includes a first one having at least two transistors a set of transistors, the second pull-down unit includes a second set of transistors having at least two transistors, and when the output node of the current stage is in a pull-down phase, the first set of transistors are alternated under the control of respective control signals In a conducting state, a low-level signal is alternately outputted to the output node of the current stage; when the pull-up node is in a pull-down phase, the second group of transistors are turned on under the control of respective control signals. , alternately output a low level signal to the pull up node.
2. 根据权利要求 1所述的移位寄存器单元, 还包括:  2. The shift register unit of claim 1, further comprising:
第三晶体管 (T3), 源极与上一级输出节点连接, 漏极与所述上拉节点连 接, 栅极与一输出的信号在上一级输出节点输出高电平时处于高电平的信号 输出端子连接;  a third transistor (T3), the source is connected to the output node of the upper stage, the drain is connected to the pull-up node, and the signal of the gate and an output is at a high level when the output node of the upper stage outputs a high level. Output terminal connection;
所述第二组晶体管包括所述第三晶体管 (T3), 所述上拉节点接收到的低 电平信号中包括由所述第三晶体管 (T3)输出的所述上一级输出节点输出的低 电平信号。  The second group of transistors includes the third transistor (T3), and the low level signal received by the pull-up node includes the output of the upper-level output node output by the third transistor (T3) Low level signal.
3. 根据权利要求 1所述的移位寄存器单元, 还包括:  3. The shift register unit of claim 1, further comprising:
第二晶体管 (T2), 漏极接收关断信号, 源极与本级输出节点连接, 栅极 与一输出的信号在上一级输出节点输出高电平时处于高电平的信号输出端子 连接;  a second transistor (T2), the drain receiving the turn-off signal, the source being connected to the output node of the current stage, and the gate and the output signal are connected at a signal output terminal that is at a high level when the output node of the upper stage outputs a high level;
所述第一组晶体管包括所述第二晶体管 (T2), 所述本级输出节点接收到 的低电平信号中包括由所述第二晶体管 (T2)输出的关断信号。  The first group of transistors includes the second transistor (T2), and the low level signal received by the output node of the current stage includes an off signal output by the second transistor (T2).
4. 根据权利要求 1所述的移位寄存器单元, 其中, 所述第二组晶体管还 包括第四晶体管 (T4), 漏极与下一级输出节点连接, 源极与上拉节点连接, 栅极与输出第四控制信号的信号输出端子连接; 所述上拉节点接收到的低电 平信号中包括由所述第四晶体管 (T4)输出的所述下一级输出节点输出的低电 平信号。  4. The shift register unit according to claim 1, wherein the second group of transistors further comprises a fourth transistor (T4), the drain is connected to the next-stage output node, the source is connected to the pull-up node, and the gate is connected. The pole is connected to the signal output terminal that outputs the fourth control signal; the low level signal received by the pull-up node includes the low level output by the next-stage output node output by the fourth transistor (T4) signal.
5. 根据权利要求 1所述的移位寄存器单元, 还包括: 第一晶体管 (Tl), 源极与输出第二控制信号的信号输出端子连接, 漏极 与所述本级输出节点连接, 栅极与上拉节点连接; 本级输出节点需要输出高 电平信号时, 所述第二控制信号处于高电平; 5. The shift register unit of claim 1, further comprising: The first transistor (T1) has a source connected to the signal output terminal of the output second control signal, a drain connected to the output node of the current stage, and a gate connected to the pull-up node; the output node of the stage needs to output a high level signal The second control signal is at a high level;
所述第一组晶体管包括:  The first set of transistors includes:
第二晶体管 (T2), 漏极接收关断信号, 源极与本级输出节点连接, 栅极 与输出第一控制信号的信号输出端子连接;  a second transistor (T2), the drain receiving the turn-off signal, the source being connected to the output node of the current stage, and the gate being connected to the signal output terminal outputting the first control signal;
第六晶体管 (T6), 漏极接收关断信号, 源极与本级输出节点连接, 栅极 与输出第三控制信号的信号输出端子连接;  a sixth transistor (T6), the drain receiving the turn-off signal, the source being connected to the output node of the current stage, and the gate being connected to the signal output terminal outputting the third control signal;
第七晶体管 (T7), 漏极接收关断信号, 源极与本级输出节点连接, 栅极 与输出第四控制信号的信号输出端子连接;  a seventh transistor (T7), the drain receiving the turn-off signal, the source being connected to the output node of the current stage, and the gate being connected to the signal output terminal outputting the fourth control signal;
所述第二组晶体管包括:  The second set of transistors includes:
第三晶体管 (T3), 源极与上一级输出节点连接, 漏极与上拉节点连接, 栅极与输出第一控制信号的信号输出端子连接;  a third transistor (T3), the source is connected to the upper output node, the drain is connected to the pull-up node, and the gate is connected to the signal output terminal outputting the first control signal;
第四晶体管 (T4), 漏极与下一级输出节点连接, 漏极与上拉节点连接, 栅极与输出第四控制信号的信号输出端子连接; 以及  a fourth transistor (T4) having a drain connected to the next stage output node, a drain connected to the pull-up node, and a gate connected to a signal output terminal outputting the fourth control signal;
第五晶体管 (T5), 漏极与输出关断信号的信号输出端子连接, 源极与上 拉节点连接, 栅极与输出第三控制信号的信号输出端子连接;  a fifth transistor (T5) having a drain connected to a signal output terminal of the output turn-off signal, a source connected to the pull-up node, and a gate connected to a signal output terminal outputting the third control signal;
其中:  among them:
所述第一控制信号、 第二控制信号、 第三控制信号、 第四控制信号的信 号占空比为 1/4, 且处于高电平的时间段互不重叠;  The signal duty ratios of the first control signal, the second control signal, the third control signal, and the fourth control signal are 1/4, and the periods in the high level do not overlap each other;
上一级输出节点输出高电平时, 所述第一控制信号处于高电平; 以及 下一级输出节点输出高电平时, 所述第三控制信号处于高电平。  When the output node of the upper stage outputs a high level, the first control signal is at a high level; and when the output node of the next stage outputs a high level, the third control signal is at a high level.
6. 一种栅极驱动电路, 包括多级如权利要求 1-5中任意一项所述的移位 寄存器单元。  A gate driving circuit comprising a plurality of shift register units according to any one of claims 1-5.
7. —种显示装置, 包括如权利要求 6所述的栅极驱动电路。  A display device comprising the gate drive circuit of claim 6.
PCT/CN2013/074001 2013-02-18 2013-04-10 Shift register unit, grid drive circuit and display device WO2014124570A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201310052893.X 2013-02-18
CN201310052893.XA CN103137061B (en) 2013-02-18 2013-02-18 Shift register cell, gate driver circuit and display device

Publications (1)

Publication Number Publication Date
WO2014124570A1 true WO2014124570A1 (en) 2014-08-21

Family

ID=48496821

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2013/074001 WO2014124570A1 (en) 2013-02-18 2013-04-10 Shift register unit, grid drive circuit and display device

Country Status (2)

Country Link
CN (1) CN103137061B (en)
WO (1) WO2014124570A1 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104376826B (en) * 2014-11-20 2017-02-01 深圳市华星光电技术有限公司 Shifting register unit, grid driving circuit and displaying device
CN104575436B (en) * 2015-02-06 2017-04-05 京东方科技集团股份有限公司 Shift register cell, gate driver circuit and display device
CN104766573B (en) * 2015-03-10 2017-05-10 昆山龙腾光电有限公司 Gate drive circuit and display device
CN105469754B (en) * 2015-12-04 2017-12-01 武汉华星光电技术有限公司 Reduce the GOA circuits of feed-trough voltage
CN105390086B (en) * 2015-12-17 2018-03-02 武汉华星光电技术有限公司 Gate driving circuit and the display using gate driving circuit
TWI562114B (en) * 2015-12-30 2016-12-11 Au Optronics Corp Shift register and shift register circuit
CN105427825B (en) * 2016-01-05 2018-02-16 京东方科技集团股份有限公司 A kind of shift register, its driving method and gate driving circuit
CN105810166B (en) * 2016-05-23 2019-06-04 信利(惠州)智能显示有限公司 Shift register cell circuit, shift register and its liquid crystal display
CN106531048B (en) 2016-11-29 2020-03-27 京东方科技集团股份有限公司 Shift register, grid driving circuit, display panel and driving method
CN106601179B (en) * 2017-02-24 2019-11-22 京东方科技集团股份有限公司 Shifting deposit unit, shift register, gate driving circuit and display panel
CN106898322B (en) 2017-03-29 2020-01-21 京东方科技集团股份有限公司 Shift register and driving method thereof, grid driving circuit and display device
CN107248401B (en) 2017-08-08 2020-04-03 京东方科技集团股份有限公司 GOA circuit, driving method thereof and display device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101425340A (en) * 2008-12-09 2009-05-06 友达光电股份有限公司 Shifting cache apparatus
US20100177023A1 (en) * 2009-01-12 2010-07-15 Samsung Mobile Display Co., Ltd. Shift register and organic light emitting display device using the same
CN102654986A (en) * 2011-11-25 2012-09-05 京东方科技集团股份有限公司 Shift register electrode, grid electrode driver, array substrate and display device
CN102708778A (en) * 2011-11-28 2012-10-03 京东方科技集团股份有限公司 Shift register and drive method thereof, gate drive device and display device
CN102708779A (en) * 2012-01-13 2012-10-03 京东方科技集团股份有限公司 Shift register and driving device thereof, grid driving device and display device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101057891B1 (en) * 2004-05-31 2011-08-19 엘지디스플레이 주식회사 Shift register
US7310402B2 (en) * 2005-10-18 2007-12-18 Au Optronics Corporation Gate line drivers for active matrix displays
CN101645308B (en) * 2008-08-07 2012-08-29 北京京东方光电科技有限公司 Shift register comprising multiple stage circuit units
CN202502720U (en) * 2012-03-16 2012-10-24 合肥京东方光电科技有限公司 Shift register, array substrate grid drive unit, and display apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101425340A (en) * 2008-12-09 2009-05-06 友达光电股份有限公司 Shifting cache apparatus
US20100177023A1 (en) * 2009-01-12 2010-07-15 Samsung Mobile Display Co., Ltd. Shift register and organic light emitting display device using the same
CN102654986A (en) * 2011-11-25 2012-09-05 京东方科技集团股份有限公司 Shift register electrode, grid electrode driver, array substrate and display device
CN102708778A (en) * 2011-11-28 2012-10-03 京东方科技集团股份有限公司 Shift register and drive method thereof, gate drive device and display device
CN102708779A (en) * 2012-01-13 2012-10-03 京东方科技集团股份有限公司 Shift register and driving device thereof, grid driving device and display device

Also Published As

Publication number Publication date
CN103137061B (en) 2015-12-09
CN103137061A (en) 2013-06-05

Similar Documents

Publication Publication Date Title
WO2014124570A1 (en) Shift register unit, grid drive circuit and display device
US10892028B2 (en) Shift register and method of driving the same, gate driving circuit and display device
US10283039B2 (en) Shift register unit and driving method, gate drive circuit, and display apparatus
US10607529B2 (en) Shift register unit and driving method thereof, gate driving circuit and display apparatus
US9805658B2 (en) Shift register, gate driving circuit and display device
EP3611720B1 (en) Shift register unit, gate driving circuit, and driving method
JP6239325B2 (en) Gate drive circuit, array substrate, and display device
WO2017185590A1 (en) Shift register unit, gate driving circuit and driving method therefor, and display device
WO2017113984A1 (en) Shift register unit and drive method therefor, gate drive circuit and display apparatus
US9558701B2 (en) Shift register, integrated gate line driving circuit, array substrate and display
CN109949749B (en) Shift register, gate driving circuit, display device and gate driving method
WO2015109769A1 (en) Shift register unit, gate driver circuit, driving method therefor, and display device
TWI520493B (en) Shift register circuit and shading waveform generating method
KR102588078B1 (en) Display Device
EP2562761B1 (en) Shift register, gate driving device and data line driving device for liquid crystal display
JP6414920B2 (en) Shift register unit, display panel and display device
US10121401B2 (en) Shift register circuit and driving method thereof
JP6423957B2 (en) Gate electrode drive circuit based on IGZO manufacturing process
US10115335B2 (en) Shift register unit and driving method thereof, gate driving circuit and display device
EP3709287B1 (en) Gate drive circuit and drive method therefor, and display device
WO2020168798A1 (en) Shift register unit and driving method therefor, gate driving circuit and driving method therefor, and display device
US10388203B2 (en) GOA unit circuits, methods for driving the same, and GOA circuits
JP2012221551A (en) Shifting register and gate line driving apparatus
WO2015018149A1 (en) Shift register unit, shift register, gate driver and display panel
JP2010231209A (en) Gate drive device for liquid crystal display

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13875000

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 17/12/15)

122 Ep: pct application non-entry in european phase

Ref document number: 13875000

Country of ref document: EP

Kind code of ref document: A1