WO2014117613A1 - 一种使线路双向电流分断的装置及其控制方法 - Google Patents

一种使线路双向电流分断的装置及其控制方法 Download PDF

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Publication number
WO2014117613A1
WO2014117613A1 PCT/CN2013/090613 CN2013090613W WO2014117613A1 WO 2014117613 A1 WO2014117613 A1 WO 2014117613A1 CN 2013090613 W CN2013090613 W CN 2013090613W WO 2014117613 A1 WO2014117613 A1 WO 2014117613A1
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WIPO (PCT)
Prior art keywords
current
branch
breaking
power semiconductor
bridge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2013/090613
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English (en)
French (fr)
Inventor
曹冬明
方太勋
王宇
杨浩
杨兵
石巍
吕玮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NR Electric Co Ltd
NR Engineering Co Ltd
Original Assignee
NR Electric Co Ltd
NR Engineering Co Ltd
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Publication date
Application filed by NR Electric Co Ltd, NR Engineering Co Ltd filed Critical NR Electric Co Ltd
Priority to US15/119,730 priority Critical patent/US9634476B1/en
Publication of WO2014117613A1 publication Critical patent/WO2014117613A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H33/00—High-tension or heavy-current switches with arc-extinguishing or arc-preventing means
    • H01H33/02—Details
    • H01H33/59—Circuit arrangements not adapted to a particular application of the switch and not otherwise provided for, e.g. for ensuring operation of the switch at a predetermined point in the AC cycle
    • H01H33/596—Circuit arrangements not adapted to a particular application of the switch and not otherwise provided for, e.g. for ensuring operation of the switch at a predetermined point in the AC cycle for interrupting DC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H9/00—Details of switching devices, not covered by groups H01H1/00 - H01H7/00
    • H01H9/54—Circuit arrangements not adapted to a particular application of the switching device and for which no provision exists elsewhere
    • H01H9/541—Contacts shunted by semiconductor devices
    • H01H9/542—Contacts shunted by static switch means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H9/00—Details of switching devices, not covered by groups H01H1/00 - H01H7/00
    • H01H9/54—Circuit arrangements not adapted to a particular application of the switching device and for which no provision exists elsewhere
    • H01H9/548—Electromechanical and static switch connected in series
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/02—Details
    • H02H3/021—Details concerning the disconnection itself, e.g. at a particular instant, particularly at zero value of current, disconnection in a predetermined order
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
    • H02H3/087—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current for DC applications

Definitions

  • the present invention relates to a device for breaking a bidirectional current flowing through a line, and a control method for the device. Background technique
  • high-voltage DC circuit breakers are one of the most important devices. Due to the high voltage level and low line impedance, the multi-terminal HVDC transmission system will soon affect the DC transmission network and the AC network, and the fault must be quickly removed. Therefore, the high-voltage DC circuit breaker needs to have a fast moving speed, which can minimize the duration of the fault or suppress the fault current, and reduce the impact of the fault on the AC/DC transmission network. Since the high-voltage DC circuit breaker is connected in series to the transmission line, in addition to requiring the circuit breaker to have a high breaking circuit speed, the circuit breaker is required to have as little loss as possible. The direction of the tidal current in the HVDC transmission line is uncertain, and the current may exist in two directions. Therefore, the circuit breaker is generally required to be able to break the direct current in both directions.
  • Chinese patent application CN 102780200 A uses a conventional high-voltage DC circuit breaker to break the DC current.
  • the conventional high-voltage DC circuit breaker structure consists of three parts: an AC circuit breaker, an LC oscillation circuit and an energy consuming component.
  • an AC circuit breaker When the AC circuit breaker is separated, an arc is generated, and the arc voltage resonates with the LC oscillation circuit.
  • the peak value of the oscillating current reaches the DC current amplitude, the DC current can be completely cancelled, causing the circuit breaker port to have a zero-crossing point, causing the arc to extinguish and achieving the shutdown DC current. the goal of.
  • This breaking method can break the current in both directions and the loss is small during normal operation.
  • the traditional high-voltage DC circuit breaker has a long arc-extinguishing time of about several tens of milliseconds, which cannot meet the requirements of fast isolation of multi-terminal DC transmission system faults.
  • a solid state circuit breaker structure based on a semiconductor device is proposed in the European patent EP 0 867 998 B1, which consists of a turn-off semiconductor device group and an energy consuming element.
  • the turn-off semiconductor device group consists of a series of low-voltage turn-off semiconductor components in series. Since the turn-off speed of the semiconductor device can be turned off quickly, in the microsecond range, this method can quickly turn off the DC fault current. However, since the on-state voltage drop of the semiconductor device group is large, the transmission loss is increased and the transmission efficiency is lowered.
  • the Chinese patent application CN 102687221 A discloses an apparatus and method for interrupting the current of a transmission line or a distribution line and a current limiting arrangement. Includes main breakers, high speed switches, auxiliary breakers, and varistor energy consuming components. In normal operation mode, the line current flows through the auxiliary circuit, and the on-state loss is small. In the fault mode, the current is switched to the main breaker, and finally the energy-consuming component absorbs the breaking capacity.
  • the main circuit breaker withstands several hundred kV voltage after the high-voltage DC circuit breaker turns off the fault current, only in one current direction
  • the number of serials of upper power semiconductor devices has reached several hundred. Since the power semiconductor device can only be turned on in one direction, in order to enable the fault current to be turned off in both current directions, the main series circuit of the main circuit breaker in the high voltage DC circuit breaker employs two power semiconductor devices in anti-series or reverse In the parallel structure, the number of power semiconductor devices of the main circuit breaker is doubled.
  • the power semiconductor device of the second current direction has no beneficial effect on breaking current or withstanding voltage, which is equivalent to the main circuit breaker power semiconductor device.
  • the utilization rate is only 50%. Since the cost of the power semiconductor device occupies a large proportion in the total cost of the device, the cost of the device is greatly increased in order to realize the breaking function of the bidirectional current.
  • the increase of the power semiconductor device in the second current direction of the main circuit breaker not only does not have a beneficial effect, but the power semiconductor device in the second current direction is adversely affected by the overvoltage and overcurrent generated when the first current direction is turned off. .
  • the power semiconductor device of the second current direction is connected in reverse parallel connection with the power semiconductor device of the first current direction, the overvoltage when the first current direction is turned off is applied to the power semiconductor device in the second current direction, The voltage is a reverse voltage for the power semiconductor device in the second current direction, causing damage to the device; if the power semiconductor device with the anti-parallel diode of the second current direction and the anti-parallel diode with the first current direction are used
  • the power semiconductor device is connected in reverse series, and a very high abrupt current generated during the first current direction turn-off will flow through the freewheeling diode in the power semiconductor device in the second current direction, which will cause the lifetime of the device. Negative Effects.
  • the increased power semiconductor device in the second current direction also adversely affects the structural design and electrical design of the main circuit breaker, and the arrangement direction of the power semiconductor devices in the first current direction is uniform, so that the electrical design and the structural design are consistent. Sex.
  • the increase in the power semiconductor device in the second current direction destroys the consistency of the original layout direction, resulting in an increase in the difficulty in device layout, mounting, and wiring. Summary of the invention
  • the object of the present invention is to provide a device for breaking a bidirectional current of a line and a control method thereof, which can greatly reduce the cost of the device and reduce the layout, installation and wiring of the device under the premise of ensuring a sufficiently fast breaking speed and low loss. Difficulty.
  • the solution adopted by the present invention is:
  • a device for breaking a bidirectional current of a line comprising a breaking current branch and an on-state current branch; wherein the breaking current branch comprises a parallel connection of a non-linear resistor and a first power semiconductor device, or a non-linear resistor and Parallel connection of at least two first power semiconductor devices connected in series; the on-state current branch comprises a series connection of at least one bidirectional power semiconductor switch and at least one first high speed isolation switch;
  • the apparatus further includes a bridge branch comprising two bridge arms formed by four identical commutating branches, each of the commutating branches including at least one second power semiconductor device Connected in series; the two commutating branches are connected in series in the same direction, and the two bridge arms formed are connected in parallel;
  • connection relationship of the device is any one of the following four types:
  • the device comprises a breaking current branch, an on-state current branch and a bridge branch, wherein the two ends of the on-state current branch are respectively connected to the midpoint of the bridge arms of the two bridge arms of the bridge branch, The two bridge arms are connected in parallel with the breaking current branch;
  • the device comprises at least two components of an off current branch, an on-state current branch and a bridge branch, wherein in each group, two ends of the on-state current branch are respectively connected to the bridge branch and the two bridge arms a midpoint of the bridge arm, the two bridge arms are connected in parallel with the breaking current branch; and all on-state current branches are sequentially connected in series;
  • the device comprises an on-state current branch and at least two component breaking current branches and a bridge branch, wherein the bridge legs of each group are connected in parallel with the corresponding breaking current branch, and The midpoints of the bridge branch arms in each group are sequentially connected in series; the two ends of the on-state circuit branch are respectively connected to the midpoints of the bridge arms at the ends of the first and second bridge branches in the series circuit;
  • the device comprises an on-state current branch, a bridge branch and at least two breaking current branches, wherein the branches of the breaking circuit are sequentially connected in series, and then connected in parallel with the two legs of the bridge branch Connected, the two ends of the on-state circuit branch are respectively connected to the midpoints of the bridge arms of the two bridge arms of the bridge branch.
  • the first power semiconductor device has the ability to turn on and off current.
  • the second power semiconductor device described above does not have the ability to turn on and off current.
  • the bidirectional power semiconductor switch includes third and fourth power semiconductor devices connected in parallel with each other, and the current switching directions of the third and fourth power semiconductor devices are opposite.
  • the bidirectional power semiconductor switch includes two power semiconductor devices and two diodes, wherein the fifth power semiconductor device is connected in parallel with the first diode, and the current switching directions are opposite; the sixth power semiconductor device and the second diode Parallel, and the current switching directions are opposite; the two parallel branches are connected in series, and the current switching directions of the fifth and sixth power semiconductor devices are opposite, and the current switching directions of the first and second diodes are opposite.
  • the commutation branch further includes at least one second high speed isolation switch, the second high speed isolation switch and the second power semiconductor device being connected in series with each other.
  • a control method for a device for breaking a bidirectional current of a line wherein two connection points of an on-state current branch and a bridge branch in the device are respectively defined as two ends of the device, and the device is connected in series to the two ends a current path of the line; the first high speed isolation switch in the on-state current branch is closed with the bidirectional power semiconductor switch, and the second in the bridge branch The second power semiconductor device is closed, and the first power semiconductor device in the breaking current branch is closed; the control method includes the following steps:
  • the bidirectional power semiconductor switch of the on-state current branch is turned off, thereby converting the current to the bridge branch and the breaking current branch;
  • the first power semiconductor device in the breaking current branch is turned off, thereby converting the current to the non-linear resistor.
  • a control method for a device for breaking a bidirectional current of a line wherein two connection points of an on-state current branch and a bridge branch in the device are respectively defined as two ends of the device, and the device is connected in series to the two ends a current path of the line; the first high speed isolation switch in the on-state current branch is closed with the bidirectional power semiconductor switch, and the second power semiconductor device and the second high speed isolation switch in the bridge branch are closed, and the current branch is disconnected The first power semiconductor device is closed; the control method includes the following steps:
  • the bidirectional power semiconductor switch of the on-state current branch is turned off, thereby converting the current to the bridge branch and the breaking current branch;
  • disconnecting the first high-speed isolation switch of the on-state current branch determining a second power semiconductor device on the bridge connected to the current input terminal directly or indirectly connected to the current input terminal, disconnecting the second a second high-speed isolating switch in which the power semiconductor device is located in the commutating branch; a second power semiconductor device defining an anode connected to the current output terminal directly or indirectly on the bridge arm connected to the current output terminal, disconnecting the second power a second high speed isolation switch in which the semiconductor device is located in the commutating branch;
  • the first power semiconductor device in the breaking current branch is turned off, thereby converting the current to the nonlinear resistor
  • the second high-speed isolating switch that is still in the closed state of the bridge branch is disconnected, and the entire breaking process is completed.
  • the invention has the following characteristics:
  • the breaking speed is faster.
  • the power semiconductor device is used as the breaking current execution unit, and the speed is very fast.
  • the breaking speed of the power semiconductor device takes only tens of microseconds, which can be neglected.
  • the total breaking time is mainly due to the breaking time of the high-speed isolating switch.
  • the breaking speed of the high-speed isolating switch Up to 1 to 3ms, it can be predicted that the total breaking time of the device is about 3-5ms, which is much faster than the breaking speed of the traditional high-voltage DC circuit breaker.
  • the breaking current branch in the present invention is composed of a series of power switching devices in the same current direction, and the bidirectional current in the line flows through the breaking current branch through the current commutating branch.
  • the road is in the same direction.
  • the current commutation branch (A, D) is in the same direction as the first current
  • the power semiconductor device in the current commutation branch (B, C) is opposite to the first current direction, Reverse cutoff status.
  • the current commutating branch can be configured in two ways: One is to use a small number of power semiconductor devices in series with a high speed isolating switch, the high speed isolating switch is used to block a higher turn-off voltage, and the other is to use a large number of Power semiconductor devices are connected in series to withstand high turn-off voltages.
  • the first aspect of the invention is preferred, especially for applications where the voltage is high.
  • the current commutating branch includes a small number of power semiconductor devices and four sets of high-speed isolating switches.
  • the number of power semiconductor devices is small and the cost is very low.
  • the high-speed isolating switches are only separated without current, without arc extinguishing, and only serve to cut off the voltage. Function, lower cost.
  • the overall cost is greatly reduced compared to the patent CN 102687221 A, which increases the utilization efficiency of the power semiconductor device in the device while avoiding the drawback of the bidirectional function of the patent CN 102687221A.
  • the control method is used when the current reaches the limit value, and a certain amount of non-linear resistance is input into the line to change the line impedance, thereby limiting the rise of the fault current, which is an extension of the application of the device, and has a device.
  • FIG. 1 is a view of a device for dividing a line bidirectional current according to the present invention
  • FIG. 2 is a diagram showing a correspondence relationship between a first current direction and a direction of a power semiconductor device
  • FIG. 3 is a diagram showing a correspondence relationship between a second current direction and a direction of a power semiconductor device
  • Figure 4 is a first exemplary diagram of a current commutation branch
  • Figure 5 is a second exemplary diagram of a current commutation branch
  • Figure 6 is another embodiment of the present invention.
  • Figure 7 is still another embodiment of the present invention.
  • Figure 8 is still another embodiment of the present invention.
  • Figure 9 is a first embodiment of a bidirectional power semiconductor switch of the present invention.
  • Figure 10 is a second embodiment of the bidirectional power semiconductor switch of the present invention. detailed description
  • the present invention provides a device 20 for breaking a bidirectional current of a line, comprising a breaking current branch 9 and an on-state current branch 30, wherein the breaking current branch 9 comprises a non-linear resistor 13 and a power A parallel connection of the semiconductor devices 5, or a non-linear resistor 13 connected in parallel with at least two power semiconductor devices 5 connected in series, the on-state current branch 30 comprising at least one bidirectional power semiconductor switch 12 and at least one high-speed isolating switch 11 When the bidirectional power semiconductor switch 12 and the high speed disconnecting switch 11 are at least two in series, the connection relationship is in series with each other.
  • the device further includes four current commutating branches eight, B, C, D, wherein the structure and the component types and parameters of the four commutating branches are identical, and each of the commutating branches includes at least one power.
  • the semiconductor device 7 and the at least one high-speed isolating switch 6 are connected in series. When the power semiconductor device 7 is at least two, the connection relationship is in the same direction. When the high-speed isolating switch 6 is at least two, the connection relationship is mutual. Connect in series or indirectly.
  • the two commutating branches are connected in series in the same direction, and the two series branches are connected in parallel.
  • the commutating branches A and B are connected in series in the same direction to form a bridge arm.
  • the commutating branches (:, D are connected in series in the same direction to form another bridge arm, and the two bridge arms are further connected in parallel, and the "codirectional series connection" is specifically for the power semiconductor device 7.
  • connection relationship of the device is: one end of the on-state current branch 30 is connected to the midpoint 3 of the bridge arm formed by the commutating branches A, B, and the direction in which the current enters the connection point from the outside is the first current direction 14,
  • the other end of the on-state current branch 30 is connected to the commutating branch (the midpoint of the bridge arm formed by D: D), and the direction in which the current enters the connection point from the outside is the second current direction 15, and both bridge arms are disconnected.
  • the current branch 9 is connected in parallel; the input end of the device 20 is also connected to one end of the current limiting reactor 19 to form a series connection, and the current limiting reactor 10 is used to limit the rise of the short circuit current.
  • the power semiconductor device 5 in the breaking current branch 9 needs to have the capability of turning on and off current, and the gate turn-off device IGBT, IEGT, GTO, etc. can be used; the power semiconductor device 7 in the commutating branch It is not necessary to have the ability to turn off the current, and a diode can be used.
  • the commutating branches A, D each comprise a series connection of at least one high-speed isolating switch 6 and at least one power semiconductor device 7 of the first current direction 14, the direction of the current direction and the direction of the power semiconductor device 7 as shown in FIG.
  • the current commutating branches B, C each comprise a series connection of at least one high speed isolating switch 6 and at least one power semiconductor device 7 of the second current direction 15, the current direction corresponding to the direction of the power semiconductor device 7
  • the relationship is shown in Figure 3. This arrangement is based on the fact that the power semiconductor device has a one-way conduction characteristic, so that the line The bidirectional current in the path flows through the breaking current branch 9 in the same direction, as in node 1 to node 2 in FIG.
  • the four commutating branches are composed of a high-speed isolating switch 6 and a power semiconductor device 7 connected in series, as shown in FIG.
  • the main function of the high speed disconnector 6 is to isolate the voltage. After the breaking current branch 9 is disconnected, a high breaking voltage is generated between the node 1 and the node 2, and the voltage is applied to the commutating branch, and the high-speed isolating switch 6 can withstand a high breaking voltage, so that the switching It is only necessary to withstand a small breaking voltage to the power semiconductor device 7 in the branch, and a small number of devices are connected in series, which saves the device cost.
  • the four commutating branches can also be replaced by the method shown in FIG. 5.
  • the commutating branch can also be a series connection of at least one power semiconductor device 7, which saves The high speed isolating switch is removed, but the series connection of the power semiconductor device 7 needs to be able to withstand a very high voltage, requiring a large number of devices in series.
  • the power semiconductor devices 7 in the commutating branches may be connected in parallel in the same direction to improve the current carrying capacity of the commutating branches.
  • the device 20 is connected in series with the line 44.
  • the on-state current branch 30 has only a small number of power semiconductor devices, and the conduction voltage drop is smaller. Under normal conditions, the line current flows through the on-state current branch 30, and the loss is small.
  • the on-state current branch 30 consists of at least one bidirectional power semiconductor switch 12 and a high-speed isolating switch 11 , wherein the bidirectional power semiconductor switch 12 comprises a power semiconductor component 5 of a first current direction 14 and a power semiconductor of a second current direction 15 .
  • the parallel connection of device 28 is shown in FIG.
  • the bidirectional power semiconductor switch 12 can also be of another configuration, comprising a first parallel connection of the power semiconductor device 5 of the first current direction 14 and the diode 26 of the second current direction 15 and a power of the second current direction 15
  • the semiconductor device 25 is connected in parallel with the second parallel connection of the diodes 27 of the first current direction 14, the first parallel connection being connected in series with the second parallel connection, as shown in FIG.
  • the arrangement direction of the power semiconductor device 5 in the breaking current branch 9 in the device 20 is always coincident with the line current direction. As shown in FIGS. 2 and 3, the current direction in the breaking current branch 9 is from node 1 to node. 2.
  • the breaking current branch 9 has a higher voltage blocking capability than the on-state current branch 30.
  • the main function of the breaking current branch 9 is to interrupt the current in the line and to withstand a higher breaking voltage, and the branch includes many
  • the power semiconductor devices 5 in the breaking current branch 9 can be connected in parallel in the same direction to improve the current carrying capability of the branch.
  • the present invention also includes the foregoing method of controlling a device 20 for breaking a line bidirectional current, wherein the device 20 is connected in series to a current path of line 44, wherein a high speed isolating switch in the on-state current branch 30 of the device 20 11 is closed with the bidirectional power semiconductor switch 12, the high speed isolating switch 6 and the power semiconductor device 7 of the four commutating branches A, B, C, D are closed, and the power semiconductor device 5 in the breaking current branch 9 is closed, said method Includes the following steps:
  • the bidirectional power semiconductor switch 12 of the on-state current branch 30 is turned off, thereby converting the current to the commutating branches A, B, C, D and the breaking current Branch 9,
  • the current commutation branches B, C and the on-state current branch 30 are subjected to the high breaking voltage generated by the breaking current branch 9 breaking, and therefore, the breaking current branch 9 Before the breaking, it is necessary to separate the current switching branches B, C and the high-speed isolating switch 11 of the on-state current branch 30 to prevent the power semiconductor device of the above-mentioned branch from being damaged by the high breaking voltage; and the current commutating branch eight D and the breaking current branch 9 are connected in series, and a breaking current flows, but does not withstand a high breaking voltage, and should be kept closed.
  • the high-speed isolating switch 6 of the current commutating branches A, D and the high-speed isolating switch 11 of the on-state current branch 30 are simultaneously disconnected, when the second current direction 14 is as shown in FIG. It is shown that the current commutation branches A, D and the on-state current branch 30 will withstand the high breaking voltage generated by the breaking current branch 9 breaking. Therefore, before the breaking current branch 9 is disconnected, the current must be commutated to the branch A.
  • D and the high-speed isolating switch 11 of the on-state current branch 30 are separated to prevent the power semiconductor device of the above branch from being damaged by the high breaking voltage; and the current commutating branches 13 and C and the breaking current branch 9 are connected in series Relationship, there is a breaking current flowing, but will not withstand high breaking voltage, should be kept closed.
  • the power semiconductor device 5 in the breaking current branch is turned off, thereby converting the current to the non-linear resistor 13.
  • device 40 includes at least two of said devices 20 connected in series with one another and in series with a current path of line 44, wherein said device 40 is adapted when the current in said current path exceeds a current limit, A certain number of the at least two devices 20 are controlled such that current flows through the on-state current branch 30 of the at least two devices 20 to the non-linear resistor 13.
  • the device 41 connected in series with the line 44 comprises at least two current commutation branches A, B and a current commutating branch (:, D and a parallel connection of the breaking current branch 9, wherein said parallel Connections are connected in series, the series
  • the connection is connected in parallel with the on-state current branch 30.
  • the on-state current branch 30 and a certain number of the at least two current commutation branches A, B, and the current commutating branch (:, D, and the breaking current branch) are operated.
  • the parallel connection of the paths 9 causes the current through the on-state current branch 30 to be commutated to the non-linear resistors 13 in the at least two parallel connections.
  • the device 42 connected in series with the line 44 comprises a series connection of at least two breaking current branches 9, wherein the breaking current branch 9 comprises a parallel connection of at least one power semiconductor component 5 and a non-linear resistor 13, Also included is an on-state current branch 30 comprising at least one bidirectional power semiconductor switch 12 and at least one high speed isolation switch 11 connected in series; further comprising current commutation branches A, B, CD, said current commutation branches A, B And CDs each comprise a series connection of at least one power semiconductor device 7 and at least one high speed isolation switch 6, one end of the on-state current branch 30 is connected to the midpoint 3 of the bridge arm formed by the current commutation branches A, B, and the on-state current The other end of the branch 30 is connected to the midpoint 4 of the bridge arm formed by the current commutation branch (:, D), and the two bridge arms are connected in series with the series connection of the at least two breaking current branches 9 to form a parallel connection.
  • the breaking current branch 9 comprises a parallel connection of at least
  • the series connection of the on-state current branch 30 and a certain number of the at least two breaking current branches 9 is operated such that the through-state current branch 30 The current is commutated to the series connected varistor 13 of the at least two breaking current branches 9.
  • the design device 20 is capable of breaking the bidirectional current of a ⁇ 400 kV HVDC transmission line with a current breaking capacity of 2 kA.
  • the device 20 for breaking the bidirectional current of the line includes: a breaking current branch 9, a current commutating branch A, B, C, D and an on-state current branch 30: wherein the breaking current branch 9 is At least 800kV breaking voltage can be withstood, considering a certain margin, according to the 1200kV design, two IGBTs of 4. 5kV/l.
  • 6kA are connected in parallel as one unit device, considering the voltage unevenness that may occur at the time of turn-off, the device
  • the voltage-resistant design requires a certain margin, and a total of 400 unit devices are required in series to form an IGBT valve block, and the total number of components is 800. All IGBT layout directions are the same.
  • the on-state current branch 30 includes a bidirectional power semiconductor switch 12 and a high speed disconnect switch 11 in series.
  • the high speed isolation switch 11 requires a faster breaking speed, and the break can withstand a voltage of 1200 kV after breaking. 4. 5kV/l. 6kA IGBTs with freewheeling diodes are connected in series to form a single unit device.
  • the on-state circuit branch 30 requires three units to be connected in series, and then connected in parallel to form a valve group. A total of six devices are required. For cell devices, the total number of devices is 12, and the IGBT and freewheeling diodes are arranged in two directions.
  • the on-state current branch 30 connects the midpoint 3 of the bridge arms at both ends of the line with the midpoint 4 of the bridge arm.
  • the device 20 further includes current reversing branches A, B, C, D, wherein the commutating branches VIII and B constitute a midpoint and a line bridge
  • the device 20 requires a total of four current commutation branches, the devices of each branch are the same, each branch includes a power semiconductor 7 and a high-speed isolation switch 6, the technical requirements of the high-speed isolation switch 6 and the on-state current branch 30 are basically Consistent.
  • the power semiconductor device 7 can withstand a small breaking voltage and requires a small number of series connections.
  • the power semiconductor device 7 is selected as a 4. 5kV/1. 6kA diode.
  • a total of three diodes are connected in series and then connected in parallel to form a diode group.
  • Each branch requires six diodes, and four groups of current commutation branches require a total of 24
  • the diodes and diodes are arranged in the direction shown in Figures 2 and 3.
  • the control method includes the following steps:
  • the high speed isolating switch 11 and the bidirectional power semiconductor switch 12 in the on-state current branch 30 of the device 20 are closed, and the high speed isolating switch 6 and power in the current commutating branches A, B, C, D
  • the semiconductor device 7 is closed, the power semiconductor device 5 in the breaking current branch 9 is closed, since the on-state current branch 30 comprises only three IGBTs in series, and the breaking current branch 9 comprises 400 IGBTs in series, breaking the current branch 9
  • the rated voltage blocking capability is much larger than the on-state current branch 30, that is, the on-state current branch 30 has a relatively small equivalent on-resistance, and the normal line current flows through the on-state current branch 30.
  • the bidirectional semiconductor switch 12 of the on-state current branch 30 is turned off, thereby converting the current to the current commutation branch and the breaking current branch 9, if In a current direction 14, the current flows through the path as shown in FIG. If it is the second current direction 15, the current flows through the path as shown in Figure 3.
  • the current direction of the line 44 is judged, if it is the first current direction 14, the high-speed isolating switch 6 of the current commutating branch B, C and the high-speed isolating switch 11 of the on-state current branch 30 are simultaneously disconnected; Two current directions 15, simultaneously disconnecting the current commutating branch VIII, the high speed isolating switch 6 of D, and the high speed isolating switch 11 of the on-state current branch 30;
  • the IGBT valve group in the breaking current branch 9 is simultaneously turned off, thereby converting the current to the non-linear resistor 13.

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Abstract

一种使线路双向电流分断的装置及其控制方法，所述装置包括分断电流支路（9）和通态电流支路（30），分断电流支路（9）包括一个非线性电阻（13）与一个第一功率半导体器件（5）的并联连接，或一个非线性电阻（13）与至少两个相互串联的第一功率半导体器件（5）并联连接，通态电流支路（30）包括至少一个双向功率半导体开关（12）和至少一个高速隔离开关（11）的串联连接，所述装置还包括桥式支路，桥式支路包括由4条完全相同的电流换向支路构成的两条桥臂，该装置能够断开双向电流。

Description

一种使线路双向电流分断的装置及其控制方法
技术领域
本发明涉及使流经线路的双向电流分断的装置， 以及该装置的控制方法。 背景技术
在多端直流输电系统中， 高压直流断路器是至关重要的设备之一。 多端高压直流输 电系统由于电压等级高、 线路阻抗小， 一旦发生线路短路故障， 将很快影响到直流输电 网络和交流网络， 必须迅速切除故障。 因此， 高压直流断路器需要动作速度快， 能够最 大限度的减小故障持续时间或抑制故障电流， 减小故障对交 /直流输电网络的冲击。 由于 高压直流断路器串联于输电线路， 除要求断路器有较高的开断电路的速度， 还要求断路 器有尽量小的损耗。 高压直流输电线路中潮流方向不确定， 电流可能存在两个方向， 因 此一般要求断路器能够分断两个方向的直流电流。
中国专利申请 CN 102780200 A采用传统高压直流断路器分断直流电流， 传统高压直 流断路器结构由三部分构成： 交流断路器、 LC振荡回路和耗能元件。 交流断路器分开后 产生电弧， 电弧电压与 LC振荡回路发生谐振， 当振荡电流峰值达到直流电流幅值时可完 全抵消直流电流， 使断路器端口出现过零点， 促使电弧熄灭， 实现关断直流电流的目的。 这种分断方式可以分断两个方向的电流， 且正常工作时损耗很小。 但是， 传统高压直流 断路器灭弧时间较长， 约几十毫秒， 无法满足快速隔离多端直流输电系统故障的需求。
在欧洲专利 EP 0867998 B1 中提出了基于半导体器件的固态断路器结构， 由可关断 半导体器件组和耗能元件构成。 可关断半导体器件组由很多个低压可关断半导体元件串 联组成， 由于可关断半导体器件的分断速度很快， 为微秒级， 该方式可以快速的关断直 流故障电流。 但是， 由于半导体器件组的通态压降大， 增加了输电损耗、 降低了输电效 率。
为满足快速隔离直流故障电流并且保持较高的输电效率， 中国专利申请 CN 102687221A公开了一种使输电线路或配电线路的电流断路的装置和方法以及限流布置。 包括主断路器、 高速开关、 辅助断路器和非线性电阻耗能元件。 正常工作模式下， 线路 电流流过辅助回路， 通态损耗小； 故障模式下， 电流换至主断路器， 最终由耗能元件吸 收分断能力。
该高压直流断路装置关断故障电流后主断路器承受数百 kV电压，仅在一个电流方向 上功率半导体器件串联数目就已达到数百只。 由于功率半导体器件只能单方向导通， 为 了实现在两个电流方向上都能够关断故障电流， 该高压直流断路装置中的主断路器基本 串联单元采用了两个功率半导体器件反串联或反并联结构， 主断路器的功率半导体器件 数量增加了一倍， 在第一电流方向分断时， 第二电流方向的功率半导体器件对分断电流 或承受电压没有有益作用， 相当于主断路器功率半导体器件的利用率只有 50 %。 由于功 率半导体器件的成本在该装置总成本中占有很大的比例， 因此为了实现双向电流的分断 功能， 大大增加了装置的成本。
主断路器中第二电流方向的功率半导体器件的增加不但不会产生有益作用， 第二电 流方向的功率半导体器件反而会受到在第一电流方向关断时产生的过压和过流的不利影 响。 如果第二电流方向的功率半导体器件与第一电流方向的功率半导体器件采用反向并 联的方式连接， 在第一电流方向关断时的过电压将施加在第二电流方向的功率半导体器 件上， 该电压对于第二电流方向的功率半导体器件来说是反向电压， 会对器件造成损伤; 如果采用第二电流方向的带反并联二极管的功率半导体器件与第一电流方向的带反并联 二极管的功率半导体器件采用反向串联的方式连接， 在第一电流方向关断过程中产生的 很高的突变电流将流过第二电流方向的功率半导体器件中的续流二极管， 会对器件的寿 命造成不利影响。
增加的第二电流方向的功率半导体器件也会对主断路器的结构设计及电气设计造成 不利的影响， 第一电流方向的功率半导体器件的布置方向是一致的， 使得电气设计及结 构设计具有一致性。 第二电流方向的功率半导体器件的增加破坏了原有布置方向的一致 性， 导致对器件布局、 安装及布线的难度增加。 发明内容
本发明的目的是提出一种使线路双向电流分断的装置及其控制方法， 在保证足够快 的分断速度和低损耗的前提下， 大大降低装置的成本， 减小装置器件布局、 安装及布线 的难度。
为了达成上述目的， 本发明采用的解决方案是：
一种使线路双向电流分断的装置， 包括分断电流支路和通态电流支路； 其中， 分断 电流支路包括一个非线性电阻和一个第一功率半导体器件的并联连接， 或一个非线性电 阻和至少两个相互串联的第一功率半导体器件的并联连接； 通态电流支路包括至少一个 双向功率半导体开关和至少一个第一高速隔离开关的串联连接； 所述装置还包括桥式支路， 所述桥式支路包括由 4条完全相同的换向支路所构成的 两条桥臂， 各换向支路均包括至少一个第二功率半导体器件的串联连接； 所述 4条换向 支路两两一组同向串联， 所形成的两条桥臂再进行并联；
所述装置的连接关系为以下 4种中的任意一种：
a)所述装置包括一条分断电流支路、一条通态电流支路和一个桥式支路， 所述通态 电流支路的两端分别连接桥式支路两桥臂的桥臂中点， 所述两桥臂均与分断电流支路并 联连接；
b)所述装置包括至少两组分断电流支路、 通态电流支路和桥式支路， 每一组中， 所 述通态电流支路的两端分别连接桥式支路两桥臂的桥臂中点， 所述两桥臂均与分断电流 支路并联连接； 且所有通态电流支路依次顺序串联连接；
c )所述装置包括一条通态电流支路以及至少两组分断电流支路和桥式支路， 每一组 中的桥式支路两桥臂均与对应的分断电流支路并联连接， 且各组中桥式支路桥臂中点依 次顺序串联连接； 所述通态电路支路的两端分别连接前述串联电路中首尾桥式支路端部 的桥臂中点；
d)所述装置包括一条通态电流支路、 一个桥式支路和至少两条分断电流支路， 所述 各分断电路支路依次顺序串联连接后， 再与桥式支路两桥臂并联连接， 所述通态电路支 路的两端分别连接桥式支路两桥臂的桥臂中点。
上述第一功率半导体器件具有开通关断电流能力。
上述第二功率半导体器件不具有开通关断电流能力。
上述双向功率半导体开关包括相互并联的第三、 四功率半导体器件， 且第三、 四功 率半导体器件的电流开关方向相反。
上述双向功率半导体开关包括两个功率半导体器件和两个二极管， 其中， 第五功率 半导体器件与第一二极管并联， 且二者电流开关方向相反； 第六功率半导体器件与第二 二极管并联， 且二者电流开关方向相反； 所述两个并联支路串联连接， 且第五、 六功率 半导体器件的电流开关方向相反， 第一、 二二极管的电流开关方向相反。
上述换向支路还包括至少一个第二高速隔离开关， 所述第二高速隔离开关与第二功 率半导体器件相互串联。
一种使线路双向电流分断的装置的控制方法， 定义所述装置中通态电流支路与桥式 支路的两个连接点分别为装置的两端， 所述装置以该两端串联连接到线路的电流通路； 所述通态电流支路中的第一高速隔离开关与双向功率半导体开关闭合， 桥式支路中的第 二功率半导体器件闭合， 分断电流支路中的第一功率半导体器件闭合； 所述控制方法包 括如下步骤：
一如果接收到通态电流支路的断开信号， 则断开通态电流支路的双向功率半导体开 关， 由此将电流变换到桥式支路和分断电流支路；
一此后， 断开通态电流支路的第一高速隔离开关；
一此后， 如果接收到分断电流支路的断开信号， 则断开分断电流支路中的第一功率 半导体器件， 由此将电流变换到所述非线性电阻。
一种使线路双向电流分断的装置的控制方法， 定义所述装置中通态电流支路与桥式 支路的两个连接点分别为装置的两端， 所述装置以该两端串联连接到线路的电流通路； 所述通态电流支路中的第一高速隔离开关与双向功率半导体开关闭合， 桥式支路中的第 二功率半导体器件与第二高速隔离开关闭合， 分断电流支路中的第一功率半导体器件闭 合； 所述控制方法包括如下步骤：
一如果接收到通态电流支路的断开信号， 则断开通态电流支路的双向功率半导体开 关， 由此将电流变换到桥式支路和分断电流支路；
一此后， 断开通态电流支路的第一高速隔离开关； 确定与电流输入端所连接的桥臂 上与该电流输入端直接或间接连接的阴极的第二功率半导体器件， 断开该第二功率半导 体器件所在换向支路的第二高速隔离开关； 确定与电流输出端所连接的桥臂上与该电流 输出端直接或间接连接的阳极的第二功率半导体器件， 断开该第二功率半导体器件所在 换向支路的第二高速隔离开关；
一此后， 如果接收到分断电流支路的断开信号， 则断开分断电流支路中的第一功率 半导体器件， 由此将电流变换到所述非线性电阻；
一将桥式支路中尚处于闭合状态的第二高速隔离开关断开， 完成整个分断过程。 采用上述方案后， 本发明具有以下特点：
( 1 )通态损耗低： 在线路正常工作时， 线路电流流过由几乎零阻抗的高速隔离开关 与导通压降很小的少量功率半导体器件组成的通态电流支路。 电流换向支路与分断电流 支路由于需要更高的导通压降， 几乎没有电流流过， 不需要为电流换向支路额外安装冷 却系统。 装置的总损耗很低；
( 2 )与传统高压直流断路器相比分断速度较快， 采用功率半导体器件作为分断电流 执行单元， 速度很快， 通常功率半导体器件的分断速度仅需几十微秒， 可以忽略不计， 装置的总分断时间主要在于高速隔离开关的分断时间， 目前， 高速隔离开关的分断速度 可达 1一 3ms， 可以预测， 装置的总分断时间在 3— 5ms左右， 比传统高压直流断路器的分 断速度快的多。
( 3 )仅较小的成本实现双向电流的分断： 本发明中的分断电流支路由同一个电流方 向的功率开关器件串联组成， 通过电流换向支路使得线路中的双向电流流过分断电流支 路为同一方向。 当线路电流为第一电流方向时， 电流换向支路（A, D)与第一电流方向一 致， 电流换向支路（B, C)中的功率半导体器件与第一电流方向相反， 处于反向截止状态。 当线路电流为第二电流方向时， 电流换向支路（B, C)与第二电流方向一致， 电流换向支 路（A, D) 中的功率半导体器件与第二电流方向相反， 处于反向截止状态。 由此可见， 当 线路电流方向不同时， 流过分断电流支路的电流方向是一致的。 电流换向支路可以有两 种组成方式： 一种方式是采用少量的功率半导体器件与一个高速隔离开关串联， 高速隔 离开关用于隔断较高的关断电压， 另一种方式是采用大量的功率半导体器件串联， 承受 高关断电压。 本发明优选第一种方案， 尤其对于电压很高的场合。 电流换向支路一共包 括少量的功率半导体器件和四组高速隔离开关， 功率半导体器件数量很少， 成本很低， 高速隔离开关只是无电流状态下分开， 无需灭弧， 仅起到隔断电压的作用， 成本较低。 总体成本与专利 CN 102687221A相比成本大大减小， 提高了装置中的功率半导体器件的 利用效率， 同时避免了专利 CN 102687221A实现双向功能的缺陷。
( 4)控制方法用于当电流达到极限值， 通过操作使得线路中投入一特定数量的非线 性电阻达到改变线路阻抗， 起到限制故障电流上升的作用， 是对装置应用上的扩展， 具 有装置的优点。 附图说明
图 1是本发明使线路双向电流分断的装置图；
图 2是第一电流方向与功率半导体器件的方向对应关系图；
图 3是第二电流方向与功率半导体器件的方向对应关系图；
图 4是电流换向支路的第一示例图；
图 5是电流换向支路的第二示例图；
图 6是本发明的另一实施例；
图 7是本发明的再一实施例；
图 8是本发明的又一实施例；
图 9是本发明中双向功率半导体开关的第一实施例； 图 10是本发明中双向功率半导体开关的第二实施例。 具体实施方式
以下将结合附图及具体实施例， 对本发明的技术方案进行详细说明。
如图 1所示， 本发明提供一种使线路双向电流分断的装置 20， 包括分断电流支路 9 和通态电流支路 30，其中，分断电流支路 9包括一个非线性电阻 13与一个功率半导体器 件 5的并联连接，或一个非线性电阻 13与至少两个相互串联的功率半导体器件 5的并联 连接， 通态电流支路 30包括至少一个双向功率半导体开关 12和至少一个高速隔离开关 11的串联连接， 前述双向功率半导体开关 12、 高速隔离开关 11为至少两个时， 其连接 关系为相互串联。
所述装置还包括 4条电流换向支路八、 B、 C, D， 其中， 4条换向支路的结构及组成 器件类型、 参数完全相同， 各条换向支路均包括至少一个功率半导体器件 7和至少一个 高速隔离开关 6的串联连接， 前述功率半导体器件 7为至少两个时， 其连接关系是同向 串联， 所述高速隔离开关 6为至少两个时， 其连接关系为相互串联或间接串联。 所述 4 条换向支路两个一组同向串联， 所述两条串联支路再进行并联， 在本实施例中， 所述换 向支路 A、 B同向串联， 组成一条桥臂， 换向支路 (：、 D同向串联， 组成另一条桥臂， 前 述两条桥臂再进行并联， 所说的 "同向串联"具体是针对功率半导体器件 7而言。
所述装置的连接关系是： 通态电流支路 30的一端连接换向支路 A、 B构成的桥臂中 点 3， 且定义电流由外部进入该连接点的方向为第一电流方向 14， 而通态电流支路 30的 另一端连接换向支路 (：、 D构成的桥臂中点 4， 定义电流由外部进入该连接点的方向为第 二电流方向 15，两桥臂均与分断电流支路 9并联连接；所述装置 20的输入端还连接限流 电抗器 19的一端， 形成串联连接， 该限流电抗器 10用以限制短路电流上升。
在本实施例中，分断电流支路 9中的功率半导体器件 5需要具有开通关断电流能力， 可采用门极可关断器件 IGBT、 IEGT、 GTO等； 换向支路中的功率半导体器件 7不需具有 开通关断电流能力， 可采用二极管。
所述换向支路 A、 D均包括至少一个高速隔离开关 6和所述第一电流方向 14的至少 一个功率半导体器件 7的串联连接，电流方向与功率半导体器件 7的方向对应关系如图 2 所示； 所述电流换向支路 B、 C均包括至少一个高速隔离开关 6和所述第二电流方向 15 的至少一个功率半导体器件 7的串联连接， 电流方向与功率半导体器件 7的方向对应关 系如图 3所示。 采用这种布置方式是利用功率半导体器件具有单向导通的特性， 使得线 路中的双向电流流过分断电流支路 9为同一方向， 如图 1中的节点 1至节点 2。
所述 4条换向支路均由高速隔离开关 6和功率半导体器件 7串联组成，如图 4所示。 高速隔离开关 6的主要作用是隔断电压。在分断电流支路 9分断后，会在节点 1和节点 2 之间产生很高的分断电压， 该电压施加到换向支路， 高速隔离开关 6可承受很高的分断 电压， 使所述换向支路中的功率半导体器件 7承受很小的分断电压即可， 需很少数量器 件串联， 这种方式节省装置成本。
所述 4条换向支路还可以采用如图 5所示的方式进行替代， 作为一种可选方式， 换 向支路也可以为至少一个功率半导体器件 7组成的串联连接， 这种方式省掉了高速隔离 开关， 但功率半导体器件 7的串联连接需能够承受很高的电压， 需要很多数量器件串联。
其中所述换向支路中的功率半导体器件 7可同方向并联， 以提高换向支路的承受电 流能力。
装置 20串联于线路 44中， 通态电流支路 30仅有少量功率半导体器件， 导通压降更 小， 正常状态下， 线路电流流过通态电流支路 30， 产生的损耗很小。
所述的通态电流支路 30由至少一个双向功率半导体开关 12和高速隔离开关 11组成， 其中双向功率半导体开关 12包括第一电流方向 14的功率半导体器件 5和第二电流方向 15的功率半导体器件 28的并联连接， 如图 9所示。
所述的双向功率半导体开关 12还可以是另一种结构， 包括第一电流方向 14的功率 半导体器件 5和第二电流方向 15的二极管 26的第一并联连接，及第二电流方向 15的功 率半导体器件 25和第一电流方向 14的二极管 27的第二并联连接，第一并联连接与第二 并联连接串联连接， 如图 10所示。
所述装置 20中的分断电流支路 9中的功率半导体器件 5布置方向始终与线路电流方 向一致， 如图 2和图 3所示， 分断电流支路 9中的电流方向为由节点 1至节点 2。分断电 流支路 9相比通态电流支路 30具有更高的电压阻塞能力，分断电流支路 9的主要作用是 中断线路中的电流， 并能够承受较高的分断电压， 支路包括很多个功率半导体器件 5的 串联连接， 接到分断指令时， 同时分断功率半导体器件 5， 分断后会在节点 1 与节点 2 之间产生分断电压， 高电压使并联在支路两端的非线性电阻 13阻抗发生变化， 最终电流 被换至非线性电阻 13， 能量由非线性电阻 13吸收。
分断电流支路 9中的功率半导体器件 5可同方向并联， 以提高支路的承受电流能力。 本发明还包括前述使线路双向电流分断的装置 20的控制方法， 其中所述装置 20串 联连接到线路 44的电流通路，其中所述装置 20中的通态电流支路 30中的高速隔离开关 11与双向功率半导体开关 12闭合， 4条换向支路 A、 B、 C, D的高速隔离开关 6和功率 半导体器件 7闭合， 分断电流支路 9中的功率半导体器件 5闭合， 所述方法包括下列步 骤：
一如果接收到通态电流支路 30的断开信号， 则断开通态电流支路 30的双向功率半 导体开关 12， 由此将电流变换到换向支路 A、 B、 C, D和分断电流支路 9，
一此后， 判断线路 44的电流方向， 如果为第一电流方向 14， 同时断开电流换向支路 B、(：的高速隔离开关 6及通态电流支路 30的高速隔离开关 11 ;当为第一电流方向 14时， 如图 2所示， 电流换向支路 B、 C和通态电流支路 30会承受分断电流支路 9分断产生的 高分断电压， 因此， 在分断电流支路 9分断之前， 务必将电流换向支路 B、 C和通态电流 支路 30的高速隔离开关 11分开， 以防止上述支路的功率半导体器件承受高分断电压而 损坏； 而电流换向支路八、 D与分断电流支路 9是串联连接关系， 有分断电流流过， 但不 会承受高分断电压， 应保持闭合状态。
如果为第二电流方向 15， 同时断开电流换向支路 A、 D的高速隔离开关 6及通态电流 支路 30的高速隔离开关 11， 当为第二电流方向 14时， 如图 3所示， 电流换向支路 A、 D 和通态电流支路 30会承受分断电流支路 9分断产生的高分断电压， 因此， 在分断电流支 路 9分断之前， 务必将电流换向支路 A、 D和通态电流支路 30的高速隔离开关 11分开， 以防止上述支路的功率半导体器件承受高分断电压而损坏； 而电流换向支路13、 C与分断 电流支路 9是串联连接关系， 有分断电流流过， 但不会承受高分断电压， 应保持闭合状 态。
一此后， 如果接收到分断电流支路 9的断开信号， 则断开分断电流支路中的功率半 导体器件 5， 由此将电流变换到所述非线性电阻 13。
一确认线路电流降为零时， 将电流换向支路八、 B、 C, D中处于闭合状态的高速隔离 开关 6断开， 完成整个分断过程。
本发明还有其它几种实施结构， 以下将做简要介绍。
如图 6所示， 装置 40包括相互串联连接且与线路 44的电流通路串联连接的至少两 个所述的装置 20，其中所述装置 40适合在所述电流通路中的电流超过电流极限时，控制 一定数量的所述至少两个装置 20， 使得通过所示至少两个装置 20的通态电流支路 30流 过电流换向到非线性电阻 13。
如图 7所示， 与线路 44串联连接的装置 41包括至少两个电流换向支路 A、 B和电流 换向支路 (：、 D与分断电流支路 9的并联连接， 其中所述并联连接相互串联连接， 该串联 连接与通态电流支路 30并联连接。所述电流通路中的电流超过电流极限时， 操作通态电 流支路 30及一定数量的所述至少两个电流换向支路 A、 B， 电流换向支路 (：、 D与分断电 流支路 9的并联连接，使得通过通态电流支路 30的电流换向到所述至少两个并联连接中 的非线性电阻 13。
如图 8所示， 与线路 44串联连接的装置 42包括至少两个分断电流支路 9的串联连 接，其中，分断电流支路 9包括至少一个功率半导体器件 5和非线性电阻 13的并联连接， 还包括至少一个双向功率半导体开关 12和至少一个高速隔离开关 11串联连接组成的通 态电流支路 30 ; 还包括电流换向支路 A、 B、 C D， 所述电流换向支路 A、 B、 C D均包 括至少一个功率半导体器件 7和至少一个高速隔离开关 6的串联连接， 通态电流支路 30 的一端连接至电流换向支路 A、 B构成的桥臂中点 3，通态电流支路 30的另一端连接至电 流换向支路 (：、 D构成的桥臂中点 4， 两桥臂均与所述至少两个分断电流支路 9的串联连 接构成并联连接。
其中， 所述电流通路中的电流超过电流极限时， 操作所述通态电流支路 30及一定数 量的所述至少两个分断电流支路 9的串联连接，使得通过通态电流支路 30的电流换向到 所述至少两个分断电流支路 9的串联连接的非线性电阻 13。
以一个实施例说明本发明的具体实施方式：
设计装置 20能够分断 ± 400kV高压直流输电线路的双向电流， 电流分断能力为 2kA。 如图 1所示， 分断该线路双向电流的装置 20包括： 分断电流支路 9， 电流换向支路 A、 B、 C, D和通态电流支路 30: 其中， 分断电流支路 9应至少能够承受 800kV的分断电 压， 考虑一定裕量， 按照分断 1200kV设计， 选择两个 4. 5kV/l. 6kA的 IGBT并联作为一 个单元器件， 考虑在关断时刻可能出现的电压不均， 对器件的耐压设计要留有一定裕量， 共需要 400个单元器件串联， 构成一个 IGBT阀组， 总器件数量为 800。所有 IGBT布置方 向一致。
通态电流支路 30包括双向功率半导体开关 12和高速隔离开关 11串联，高速隔离开 关 11要求具有较快的分断速度，分断后断口能够耐受 1200kV电压。 4. 5kV/l. 6kA的带续 流二极管的 IGBT反向串联构成一个单元器件， 通态电路支路 30共需要 3个单元器件串 联后， 再并联组成， 构成一个阀组， 共需要 6个单元器件， 总器件数量为 12， IGBT和续 流二极管的布置方向为两个方向。通态电流支路 30连接线路两端的桥臂中点 3与桥臂中 点 4。
装置 20还包括电流换向支路 A、 B、 C, D， 其中， 换向支路八、 B构成中点与线路桥 臂中点 3连接的第一桥臂， 换向支路 (：、 D构成中点与线路桥臂中点 4连接的第二桥臂， 两桥臂均与分断电流支路 9并联连接。
装置 20共需要 4个电流换向支路， 每个支路的器件相同， 每个支路包括功率半导体 器 7和高速隔离开关 6， 高速隔离开关 6的技术要求与通态电流支路 30基本一致。 功率 半导体器件 7承受很小的分断电压即可， 需很少的数量串联。 功率半导体器件 7选择为 4. 5kV/1. 6kA的二极管， 共需要 3个二极管串联后再并联， 构成一个二极管组， 每个支路 需要二极管 6个， 4组电流换向支路共需要 24个二极管， 二极管的布置方向如图 2和图 3所示。
控制方法包括下列步骤：
正常情况下，所述装置 20中的通态电流支路 30中的高速隔离开关 11与双向功率半 导体开关 12闭合， 电流换向支路 A、 B、 C, D中的高速隔离开关 6和功率半导体器件 7 闭合，分断电流支路 9中的功率半导体器件 5闭合，由于通态电流支路 30仅包括 3个 IGBT 串联， 而分断电流支路 9包括 400个 IGBT串联， 分断电流支路 9的额定电压阻断能力远 大于通态电流支路 30，也就是说通态电流支路 30具有相对极小的等效导通电阻，正常线 路电流流过通态电流支路 30。
一如果接收到通态电流支路 30的断开信号， 则断开通态电流支路 30的双向半导体 开关 12， 由此将电流变换到电流换向支路和分断电流支路 9， 如果为第一电流方向 14， 电流流经通路如图 2所示。 如果为第二电流方向 15， 电流流经通路如图 3所示。
一此后， 判断线路 44的电流方向， 如果为第一电流方向 14， 同时断开电流换向支路 B、 C的高速隔离开关 6及通态电流支路 30的高速隔离开关 11 ;如果为第二电流方向 15， 同时断开电流换向支路八、 D的高速隔离开关 6， 及通态电流支路 30的高速隔离开关 11 ;
一此后， 如果接收到分断电流支路 9的断开信号， 则同时断开分断电流支路 9中的 IGBT阀组， 由此将电流变换到所述非线性电阻 13。
一确认电流降为零时， 将电流换向支路八、 B、 C, D中处于闭合状态的高速隔离开关 6断开， 完成整个分断过程。
以上实施例仅用以说明本发明的技术方案而非对其限制， 尽管本领域的技术人员阅 读本申请后， 参照上述实施例进行种种修改或变更， 但这些修改或变更均在申请待批本 发明的权利申请要求保护范围之内。

Claims

权利要求书
1、 一种使线路双向电流分断的装置， 包括分断电流支路和通态电流支路； 其中， 分 断电流支路包括一个非线性电阻和一个第一功率半导体器件的并联连接， 或一个非线性 电阻和至少两个相互串联的第一功率半导体器件的并联连接； 通态电流支路包括至少一 个双向功率半导体开关和至少一个第一高速隔离开关的串联连接； 其特征在于：
所述装置还包括桥式支路， 所述桥式支路包括由 4 条完全相同的换向支路所构成的 两条桥臂， 各换向支路均包括至少一个第二功率半导体器件的串联连接； 所述 4 条换向 支路两两一组同向串联， 所形成的两条桥臂再进行并联；
所述装置的连接关系为以下 4种中的任意一种：
a) 所述装置包括一条分断电流支路、 一条通态电流支路和一个桥式支路， 所述通态 电流支路的两端分别连接桥式支路两桥臂的桥臂中点， 所述两桥臂均与分断电流支路并 联连接；
b ) 所述装置包括至少两组分断电流支路、 通态电流支路和桥式支路， 每一组中， 所 述通态电流支路的两端分别连接桥式支路两桥臂的桥臂中点， 所述两桥臂均与分断电流 支路并联连接； 且所有通态电流支路依次顺序串联连接；
c ) 所述装置包括一条通态电流支路以及至少两组分断电流支路和桥式支路， 每一组 中的桥式支路两桥臂均与对应的分断电流支路并联连接， 且各组中桥式支路桥臂中点依 次顺序串联连接； 所述通态电路支路的两端分别连接前述串联电路中首尾桥式支路端部 的桥臂中点；
d) 所述装置包括一条通态电流支路、 一个桥式支路和至少两条分断电流支路， 所述 各分断电路支路依次顺序串联连接后， 再与桥式支路两桥臂并联连接， 所述通态电路支 路的两端分别连接桥式支路两桥臂的桥臂中点。
2、 如权利要求 1 所述的一种使线路双向电流分断的装置， 其特征在于： 所述第一功 率半导体器件具有开通关断电流能力。
3、 如权利要求 1 所述的一种使线路双向电流分断的装置， 其特征在于： 所述第二功 率半导体器件不具有开通关断电流能力。
4、 如权利要求 1 所述的一种使线路双向电流分断的装置， 其特征在于： 所述双向功 率半导体开关包括相互并联的第三、 四功率半导体器件， 且第三、 四功率半导体器件的 电流开关方向相反。
5、 如权利要求 1 所述的一种使线路双向电流分断的装置， 其特征在于： 所述双向功 率半导体开关包括两个功率半导体器件和两个二极管， 其中， 第五功率半导体器件与第 一二极管并联， 且二者电流开关方向相反； 第六功率半导体器件与第二二极管并联， 且 二者电流开关方向相反； 所述两个并联支路串联连接， 且第五、 六功率半导体器件的电 流开关方向相反， 第一、 二二极管的电流开关方向相反。
6、 如权利要求 1 所述的一种使线路双向电流分断的装置， 其特征在于： 所述换向支 路还包括至少一个第二高速隔离开关， 所述第二高速隔离开关与第二功率半导体器件相 互串联。
7、 如权利要求 1 至 5 中任意一项所述的一种使线路双向电流分断的装置的控制方 法， 定义所述装置中通态电流支路与桥式支路的两个连接点分别为装置的两端， 所述装 置以该两端串联连接到线路的电流通路； 其特征在于： 所述通态电流支路中的第一高速 隔离开关与双向功率半导体开关闭合， 桥式支路中的第二功率半导体器件闭合， 分断电 流支路中的第一功率半导体器件闭合； 所述控制方法包括如下步骤：
一如果接收到通态电流支路的断开信号， 则断开通态电流支路的双向功率半导体开 关， 由此将电流变换到桥式支路和分断电流支路；
一此后， 断开通态电流支路的第一高速隔离开关；
一此后， 如果接收到分断电流支路的断开信号， 则断开分断电流支路中的第一功率 半导体器件， 由此将电流变换到所述非线性电阻。
8、 如权利要求 6 所述的一种使线路双向电流分断的装置的控制方法， 定义所述装置 中通态电流支路与桥式支路的两个连接点分别为装置的两端， 所述装置以该两端串联连 接到线路的电流通路； 其特征在于： 所述通态电流支路中的第一高速隔离开关与双向功 率半导体开关闭合， 桥式支路中的第二功率半导体器件与第二高速隔离开关闭合， 分断 电流支路中的第一功率半导体器件闭合； 所述控制方法包括如下步骤：
一如果接收到通态电流支路的断开信号， 则断开通态电流支路的双向功率半导体开 关， 由此将电流变换到桥式支路和分断电流支路；
一此后， 断开通态电流支路的第一高速隔离开关； 确定与电流输入端所连接的桥臂 上与该电流输入端直接或间接连接的阴极的第二功率半导体器件， 断开该第二功率半导 体器件所在换向支路的第二高速隔离开关； 确定与电流输出端所连接的桥臂上与该电流 输出端直接或间接连接的阳极的第二功率半导体器件， 断开该第二功率半导体器件所在 换向支路的第二高速隔离开关；
一此后， 如果接收到分断电流支路的断开信号， 则断开分断电流支路中的第一功率 半导体器件， 由此将电流变换到所述非线性电阻；
一将桥式支路中尚处于闭合状态的第二高速隔离开关断开， 完成整个分断过程。
PCT/CN2013/090613 2013-01-31 2013-12-27 一种使线路双向电流分断的装置及其控制方法 Ceased WO2014117613A1 (zh)

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