WO2014117400A1 - 背光模组及液晶显示装置 - Google Patents

背光模组及液晶显示装置 Download PDF

Info

Publication number
WO2014117400A1
WO2014117400A1 PCT/CN2013/071318 CN2013071318W WO2014117400A1 WO 2014117400 A1 WO2014117400 A1 WO 2014117400A1 CN 2013071318 W CN2013071318 W CN 2013071318W WO 2014117400 A1 WO2014117400 A1 WO 2014117400A1
Authority
WO
WIPO (PCT)
Prior art keywords
backlight module
light emitting
light
substrate
fluorescent layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2013/071318
Other languages
English (en)
French (fr)
Inventor
王烨文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to US13/818,987 priority Critical patent/US9273851B2/en
Publication of WO2014117400A1 publication Critical patent/WO2014117400A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01791—Quantum boxes or quantum dots
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light

Definitions

  • the present invention relates to the field of liquid crystal technology, and in particular to a backlight module, and to a liquid crystal display device using the backlight module.
  • the backlight of an LCD generally includes a white LED (Light Emitting Diode) and a CCFL (Cold Cathode) Fluorescent Lamp, which is more environmentally friendly and efficient than CCFL.
  • LCD Liquid Crystal Display Device
  • CCFL Cold Cathode Fluorescent Lamp
  • the white LED mainly uses a blue light emitting diode chip + YAG (Yttrium Aluminum). Garnet, yttrium aluminum garnet, an alumina synthetic spar used to generate a laser beam, is mixed to obtain white light.
  • YAG Yttrium Aluminum
  • Garnet yttrium aluminum garnet
  • White LEDs are mainly packaged by Phosphor and Chip.
  • a high-power LED (more than 1 watt power or more) is generally used, but in the process of use, it is difficult to efficiently dissipate heat, and heat is easily generated to the Phosphor. Effects, resulting in reduced brightness, color saturation deviation, and chromaticity shift.
  • the invention mainly solves the technical problem that the liquid crystal display device of the prior art causes brightness degradation, color saturation deviation and chromaticity shift due to the use of the phosphor, and provides a backlight module and a liquid crystal display device, which can effectively increase brightness and color. Saturation and avoiding chromaticity shift problems.
  • a technical solution adopted by the present invention is to provide a backlight module, which includes: a diffusion plate and a substrate disposed oppositely, the substrate is an aluminum substrate to dissipate heat from the light emitting chip; a fluorescent layer disposed on the light incident surface of the diffusing plate, the fluorescent layer comprising a quantum dot material comprising cadmium selenide, zinc selenide and cadmium sulfide, the cadmium selenide, zinc selenide and cadmium sulfide being prepared a light-emitting chip, the light-emitting chip includes an ultraviolet light-emitting diode chip and/or a blue light-emitting diode chip, the light-emitting chip and the fluorescent layer are separately disposed, the light-emitting chip is disposed on the substrate, and the light-emitting chip is located Between the substrate and the phosphor layer, the phosphor layer is irradiated to excite the quantum dot material to
  • the backlight module further includes a back plate, and the substrate is disposed on an inner side of the back plate, and a reflective sheet is further disposed between the back plate and the substrate.
  • the backlight module further includes a brightness enhancement film disposed between the phosphor layer and the light incident surface of the diffusion plate.
  • the light-emitting chip is plural, and the plurality of light-emitting chips are disposed at a predetermined interval, and the distance from the light-emitting chip to the fluorescent layer is half of the predetermined pitch.
  • a backlight module including a diffusion plate, a substrate, a fluorescent layer, and a light emitting chip.
  • the diffusing plate is disposed opposite to the substrate; the fluorescent layer is disposed on the light incident surface of the diffusing plate, the fluorescent layer comprises a quantum dot material; the light emitting chip is disposed on the substrate, and the light emitting chip is located on the substrate and the fluorescent layer
  • the phosphor layer is irradiated to excite the quantum dot material to emit light, thereby forming a backlight.
  • the quantum dot material comprises cadmium selenide, zinc selenide and cadmium sulfide, and the cadmium selenide, zinc selenide and cadmium sulfide are mixed according to a predetermined mass ratio to form a white backlight, and the fluorescent layer and the light emitting chip are separated.
  • the light incident surface of the diffusing plate is provided with a protective film, and the fluorescent layer is coated on the protective film.
  • the light emitting chip comprises an ultraviolet light emitting diode chip and/or a blue light emitting diode chip.
  • the substrate is an aluminum substrate to dissipate heat from the light-emitting chip.
  • the backlight module further includes a back plate, and the substrate is disposed on an inner side of the back plate, and a reflective sheet is further disposed between the back plate and the substrate.
  • the power of the light emitting chip is greater than 1 watt.
  • the backlight module further includes a brightness enhancement film disposed between the phosphor layer and the light incident surface of the diffusion plate.
  • the light-emitting chip is plural, and the plurality of light-emitting chips are disposed at a predetermined interval, and the distance from the light-emitting chip to the fluorescent layer is half of the predetermined pitch.
  • a liquid crystal display device which includes a backlight module
  • the backlight module includes: a diffusion plate and a substrate disposed opposite to each other; and a fluorescent layer
  • the phosphor layer comprises a quantum dot material
  • the light emitting chip is disposed on the substrate, and the light emitting chip is located between the substrate and the phosphor layer for illuminating the phosphor layer to excite the quantum dot
  • the material illuminates to form a backlight.
  • the quantum dot material comprises cadmium selenide, zinc selenide and cadmium sulfide, and the cadmium selenide, zinc selenide and cadmium sulfide are mixed according to a predetermined mass ratio to form a white backlight, and the fluorescent layer and the light emitting chip are separated.
  • the light incident surface of the diffusing plate is provided with a protective film, and the fluorescent layer is coated on the protective film.
  • the light emitting chip comprises an ultraviolet light emitting diode chip and/or a blue light emitting diode chip.
  • the substrate is an aluminum substrate to dissipate heat from the light-emitting chip.
  • the backlight module further includes a back plate and a brightness enhancement film, the substrate is disposed on the inner side of the back plate, and a reflective sheet is disposed between the back plate and the substrate, the brightness enhancing film is disposed on the fluorescent layer and the Between the light incident surfaces of the diffuser.
  • the present invention uses a quantum dot material instead of the phosphor of the prior art fluorescent layer as a luminescent material, and further can control the particle size distribution of the quantum dot material and combine the luminescence.
  • the chip performs excitation luminescence, which can effectively increase the brightness and color saturation of the luminescence, and can effectively avoid the problem of chromaticity shift.
  • the present invention provides the fluorescent layer of the quantum dot material on the light incident surface of the diffusion plate, which is more advantageous for uniform light emission of the quantum dot material and reduces the thickness of the backlight module.
  • the light-emitting chip is separated from the fluorescent layer, which can effectively avoid the influence of the heat emitted by the light-emitting chip on the quantum dot material of the fluorescent layer, and can also save energy and benefit the environment.
  • FIG. 1 is a schematic structural view of an embodiment of a backlight module of the present invention
  • FIG. 2 is a schematic structural view of another embodiment of a backlight module of the present invention.
  • the backlight module of the present embodiment includes, but is not limited to, a diffusion plate 11, a substrate 12, a fluorescent layer 13, and a light-emitting chip 14.
  • the material of the diffusion plate 11 is not limited, and it only needs to be used for interfering with light to achieve uniform diffusion of light.
  • Materials with low refractive index and high transparency such as plastic crystals
  • materials such as a diffusing agent can also be added to improve the uniform diffusion performance of light.
  • the substrate 12 and the diffusion plate 11 are disposed opposite to each other, and the opposite positions may be arranged in parallel with each other, or may be arranged at an oblique interval from each other, and are not limited on the premise of ensuring uniform diffusion of light.
  • the substrate 12 can be an aluminum substrate, that is, the substrate 12 can be made of an aluminum material, and the heat dissipation performance of the substrate 12 can be improved by a material having better heat dissipation properties such as aluminum.
  • a circuit (not shown) for performing energization is formed on the substrate 12, and will not be described in detail within the scope understood by those skilled in the art.
  • the fluorescent layer 13 is provided on the light incident surface of the diffusing plate 11, and the fluorescent layer 13 includes a quantum dot material. Specifically, when the fluorescent layer 13 is exposed to light such as photoluminescence or electroluminescence, the emitted light directly passes through the light incident surface of the diffusing plate 11 and enters the inside of the diffusing plate 11 to be performed inside the diffusing plate 11. The interference and uniform diffusion, and then uniform light is emitted from the light exit surface of the diffusion plate 11. It should be noted that the phosphor layer 13 of the present embodiment can be directly applied to the light incident surface of the diffusion plate 11.
  • the quantum dot material of the present embodiment is a semiconductor nanocrystal (Semiconductor Nanocrystal), which is specifically made of Group II-VI or Group III-V elements. Quantum dot materials are chemically stable, soluble in water, and have nanocrystallites with a size radius between 2 nm (nanometer) and 20 nm.
  • the quantum dot materials used in this embodiment include, but are not limited to, CdSe (cadmium selenide), ZnSe (zinc selenide), and CdS (cadmium sulfide), etc., wherein CdSe, ZnSe, and CdS can be mixed in a predetermined mass ratio to form a white backlight.
  • CdSe, ZnSe, CdS, etc. of different size radii can be used to obtain RGB three primary colors respectively, and the content is effectively controlled by controlling the content of three sizes of materials.
  • the quantum dot material of different size and the anti-UV (ultraviolet light) resin material are first mixed and uniformly uniform, and then formed into the diffusion plate 11 by spraying.
  • the fluorescent layer 13 is produced by smoothing.
  • the quantum dot material of the phosphor layer 13 of the present embodiment has a richer color than the conventional phosphor: a single type of semiconductor nanocrystal can produce a color-identified marker family with different wavelengths of light by size change. This is not possible with dye molecules such as phosphors.
  • the phosphor layer 13 of the present embodiment has a broad excitation spectrum and a continuous distribution; and the emission spectrum has good monochromaticity and color, and can withstand multiple excitations and light emission, and has long-lasting stability.
  • the quantum dot material of the fluorescent layer 13 has a broad excitation spectrum and a narrow emission spectrum, while conventional dyes such as organic phosphors have a narrow excitation wavelength range, and different fluorescent dyes usually require excitation light of various wavelengths. Inspired, this brings a lot of inconvenience to the actual research work or use.
  • the quantum dot material of the present embodiment has a narrow and symmetrical fluorescence emission peak without smearing, and the multi-color quantum dot material is not prone to spectral overlap when used simultaneously.
  • the light-emitting chip 14 is disposed on the substrate 12. Further, the light-emitting chip 14 is disposed between the substrate 12 and the fluorescent layer 13 for illuminating the fluorescent layer 13 to excite the quantum dot material to emit light, thereby forming a backlight. As described above, the present embodiment can employ an aluminum substrate to improve the heat dissipation effect on the light emitting chip 14.
  • the fluorescent layer 13 and the light-emitting chip 14 of the present embodiment are disposed separately, that is, the fluorescent layer 13 is disposed on the light-incident surface of the diffusing plate 11 and the light-emitting chip 14 is disposed on the substrate 12 . on.
  • the fluorescent layer 13 and the light-emitting chip 14 are uniformly packaged, and the embodiment is more advantageous for uniform light-emitting of the quantum dot material and effectively reducing the thickness of the backlight module.
  • the embodiment further The influence of the heat emitted by the light-emitting chip 14 on the quantum dot material of the fluorescent layer 13 can be effectively avoided, and the energy can be saved and the environment can be environmentally friendly.
  • the light-emitting chips 14 of the present embodiment are plural (such as the first light-emitting chip 141, the second light-emitting chip 142, and the like).
  • the light-emitting chip 14 of the present embodiment includes, but is not limited to, an ultraviolet light-emitting diode chip and/or a blue light-emitting diode chip, that is, the light-emitting chip 14 may be an ultraviolet light-emitting diode chip, or a blue light-emitting diode chip, or an external light-emitting diode chip.
  • the use of a mixture with a blue light-emitting diode chip is not limited insofar as it is understood by those skilled in the art.
  • the plurality of light emitting chips 14 of the present embodiment may be disposed at a predetermined pitch P, and the distance H of the light emitting chip 14 to the fluorescent layer 13 may be half of the predetermined pitch P; further
  • the overall thickness of the light box formed by the light-emitting chip 14, the diffusing plate 11, the fluorescent layer 13, and the like may be equal to or substantially equal to the predetermined pitch P, and the light-emitting effect may be uniform according to the light-emitting angle of the light-emitting chip 14 and the fluorescent layer 13. Distribution performance.
  • the power of the light-emitting chip 14 of the present embodiment may be greater than 1 watt, such as a high-power light-emitting chip of the prior art such as 2 watts, 10 watts, or 100 watts.
  • the backlight module of the embodiment may further include a secondary lens (not shown) for changing the illumination angle of the light emitting chip 14.
  • the secondary lens of the embodiment can be disposed after the light-emitting chip 14 is packaged on the substrate 12 and the light bar is prepared, so as to increase the light-emitting angle of the light-emitting chip 14 and further make the light emission more uniform, and the specific manufacturing method thereof.
  • the prior art can be used, and is not limited insofar as it is understood by those skilled in the art.
  • the illumination angle adjustment of the light-emitting chip 14 is condensed to any angle between 5° and 160° by the action of the secondary lens, and the light field realized by the illumination angle may be circular, elliptical or rectangular;
  • the secondary lens of this embodiment may be an optical grade PMMA (polymethyl methacrylate) or glass, and is not limited herein.
  • a protective film 15 may be further disposed on the light incident surface of the diffusing plate 11 , and the fluorescent layer 13 is coated on the protective film 15 .
  • the backlight module of the embodiment may further include a back plate 16 and a back frame (not shown), and the substrate 12 is disposed on the inner side of the back plate 16 .
  • the quantum dot material is used as the luminescent material instead of the fluorescent powder of the prior art fluorescent layer, and the excitation light emission can be performed by controlling the particle size distribution of the quantum dot material and combining the light-emitting chip 14 to effectively increase the brightness and color saturation of the light. Degree, and can effectively avoid the problem of chromaticity shift.
  • the fluorescent layer 13 of the quantum dot material is disposed on the light incident surface of the diffusing plate 11, which is more advantageous for uniform light emission of the quantum dot material and reduces the thickness of the backlight module.
  • the light-emitting chip 14 is disposed separately from the fluorescent layer 13 , which can effectively avoid the influence of the heat emitted by the light-emitting chip 14 on the quantum dot material of the fluorescent layer 13 , and can save energy and environmental protection.
  • the backlight module of the present embodiment includes, but is not limited to, a diffusion plate 21, a substrate 22, a fluorescent layer 23, a light-emitting chip 24, and a protective film 25.
  • a material having a low refractive index and a high transparency such as a plastic crystal
  • a material such as a diffusing agent may be added to improve the uniform diffusion property to light.
  • the substrate 22 and the diffusion plate 21 are disposed opposite to each other, and the substrate 22 may be an aluminum substrate. That is, the substrate 22 may be made of an aluminum material, and the heat dissipation performance of the substrate 22 may be improved by a material having better heat dissipation properties such as aluminum. Further, a circuit (not shown) for performing energization is formed on the substrate 22, and will not be described in detail within the scope understood by those skilled in the art.
  • the fluorescent layer 23 is provided on the light incident surface of the diffusing plate 21, and the fluorescent layer 23 includes a quantum dot material. Specifically, when the fluorescent layer 23 is exposed to light such as photoluminescence or electroluminescence, the emitted light directly passes through the light incident surface of the diffusion plate 21 and enters the inside of the diffusion plate 21, thereby performing inside the diffusion plate 21. Interference and uniform diffusion, and then uniform light is emitted from the light exit surface of the diffuser plate 21. It should be noted that the fluorescent layer 23 of the present embodiment can be directly applied to the light incident surface of the diffusion plate 21.
  • the quantum dot material of the present embodiment can be specifically made of a group II-VI or a group III-V.
  • the quantum dot materials used in this embodiment include, but are not limited to, CdSe, ZnSe, CdS, etc., and can be mixed in a predetermined mass ratio to form a white backlight; in particular, the embodiment can adopt one or more different size radii ( For example, three kinds of CdSe, ZnSe, CdS, etc., respectively, obtain RGB three primary colors of light, and control the content of the three sizes of materials to effectively mix and obtain white light; in addition, in other embodiments, CdTe or the like may be further used in combination. The scope of the technical personnel will not be described in detail.
  • the quantum dot material of different size radii and the anti-UV resin material are first mixed and uniformly uniform, and then formed on the light-incident surface of the diffusion plate 21 by spraying. A fluorescent layer 23 is obtained.
  • the quantum dot material of the fluorescent layer 23 of the present embodiment has a broad excitation spectrum and a narrow emission spectrum, while the dyes of conventional organic phosphors and the like have a narrow wavelength range of excitation light, and different fluorescent dyes usually require excitation light of various wavelengths to excite. This brings a lot of inconvenience to the actual research work or use.
  • the quantum dot material of the present embodiment has a narrow and symmetrical fluorescence emission peak without smearing, and the multi-color quantum dot material is not prone to spectral overlap when used simultaneously.
  • the light-emitting chip 24 is disposed on the substrate 22. Further, the light-emitting chip 24 is disposed between the substrate 22 and the fluorescent layer 23 for illuminating the fluorescent layer 23 to excite the quantum dot material to emit light, thereby forming a backlight. As described above, the present embodiment can employ an aluminum substrate to improve the heat dissipation effect on the light-emitting chip 24.
  • the fluorescent layer 23 and the light-emitting chip 24 of the present embodiment are disposed separately, that is, the fluorescent layer 23 is disposed on the light-incident surface of the diffusing plate 21 and the light-emitting chip 24 is disposed on the substrate 22 . on.
  • the fluorescent layer 23 and the light-emitting chip 24 are uniformly packaged.
  • This embodiment is more advantageous for uniform light-emitting of the quantum dot material and effectively reduces the thickness of the backlight module.
  • the embodiment further reduces the thickness of the backlight module. The influence of the heat emitted by the light-emitting chip 24 on the quantum dot material of the fluorescent layer 23 can be effectively avoided, and the energy can be saved and the environment can be saved.
  • the light-emitting chips 24 of the present embodiment are plural (such as the first light-emitting chip 241, the second light-emitting chip 242, etc.).
  • the light-emitting chip 24 of the present embodiment includes, but is not limited to, an ultraviolet light-emitting diode chip and/or a blue light-emitting diode chip, that is, the light-emitting chip 24 may be an ultraviolet light-emitting diode chip, or a blue light-emitting diode chip, or an external light-emitting diode chip.
  • the use of a mixture with a blue light-emitting diode chip is not limited insofar as it is understood by those skilled in the art.
  • the plurality of light-emitting chips 24 of the present embodiment may be disposed at a predetermined pitch P, and the distance H of the light-emitting chip 24 to the fluorescent layer 23 may be half of the predetermined pitch P; further
  • the overall thickness of the light box formed by the light-emitting chip 24, the diffusion plate 21, the fluorescent layer 23, and the like may be equal to or substantially equal to the predetermined pitch P, and the light-emitting effect may be uniform according to the light-emitting angle of the light-emitting chip 24 and the fluorescent layer 23. Distribution performance.
  • the power of the light-emitting chip 24 of the present embodiment may be greater than 1 watt, such as a high-power light-emitting chip of the prior art such as 2 watts, 10 watts, or 100 watts.
  • the backlight module of the embodiment may further include a secondary lens (not shown) for changing the illumination angle of the light-emitting chip 24.
  • the secondary lens of the embodiment can be disposed after the light-emitting chip 24 is packaged on the substrate 22 and the light bar is prepared, so as to increase the light-emitting angle of the light-emitting chip 24 to make the light emission more uniform, and the specific manufacturing method thereof.
  • the prior art can be used, and is not limited insofar as it is understood by those skilled in the art.
  • the fluorescent layer 23 of this embodiment is coated on the protective film 25.
  • the substrate 22 is disposed on the inner side of the back plate 26, and is different from the previous embodiment in that a reflection sheet 27 may be disposed between the back plate 26 and the substrate 22, and the reflection sheet 27 may be disposed inside the back plate 26.
  • the illuminating performance and uniform performance of the backlight module can be effectively improved by the action of the reflective sheet 27.
  • the brightness enhancement film 28 is further disposed between the protective film 25 and the light-incident surface of the diffusion plate 21 in this embodiment.
  • the luminous efficiency of the backlight module can be improved by the function of the brightness enhancement film 28, which can be an ordinary prism sheet (normal Prismatic sheet), multi-function prism sheet, micro-lens film and reflective polarizer (reflective
  • the scope of the understanding of the person skilled in the art is not limited.
  • the backlight module of the embodiment uses a quantum dot material instead of the fluorescent powder of the prior art fluorescent layer as a luminescent material, and can further enhance the brightness of the illuminating by controlling the particle size distribution of the quantum dot material and combining the illuminating chip 24 to perform excitation illuminating. And color saturation, and can effectively avoid the problem of chromaticity shift.
  • the fluorescent layer 23 of the quantum dot material is disposed on the light incident surface of the diffusion plate 21, which can further facilitate uniform light emission of the quantum dot material and reduce the thickness of the backlight module.
  • the light-emitting chip 24 is disposed separately from the fluorescent layer 23, which can effectively avoid the influence of the heat emitted by the light-emitting chip 24 on the quantum dot material of the fluorescent layer 23, and can save energy and environmental protection.
  • the embodiment of the present invention further provides a liquid crystal display device, which may include the backlight module described in one or more of the foregoing embodiments, wherein it is not difficult to see that the backlight module adopts a direct type backlight, and
  • the liquid crystal display device of the present embodiment may further include a liquid crystal panel, a front frame, etc., and will not be described or limited in the scope understood by those skilled in the art.
  • the backlight module of the liquid crystal display device of the present embodiment uses a quantum dot material instead of the fluorescent powder of the prior art fluorescent layer as a luminescent material, and can thereby effectively increase the particle size distribution of the quantum dot material and combine the light emitting chip to perform excitation luminescence. Illumination brightness and color saturation, and can effectively avoid the problem of chromaticity shift.
  • the fluorescent layer of the quantum dot material is disposed on the light incident surface of the diffusing plate, which can be more favorable for uniform light emission of the quantum dot material and reduce the thickness of the backlight module.
  • the light-emitting chip is separated from the fluorescent layer, which can effectively avoid the influence of the heat emitted by the light-emitting chip on the quantum dot material of the fluorescent layer, and can also save energy and benefit the environment.

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)
  • Liquid Crystal (AREA)

Abstract

一种背光模组及液晶显示装置，背光模组包括扩散板（11）、基板（12）、荧光层（13）和发光芯片（14）。荧光层（13）设于扩散板（11）的入光面，荧光层（13）包括量子点材料；发光芯片（14）设于基板（12）上且发光芯片（14）位于基板（12）和荧光层（13）之间，用于照射荧光层（13）以激发量子点材料进行发光进而形成背光源。采用量子点材料，能够有效地增加发光的亮度和色彩饱和度，并能有效地避免色度偏移等问题，量子点材料发光均匀并降低了背光模组的厚度。

Description

背光模组及液晶显示装置
【技术领域】
本发明涉及液晶技术领域，具体是涉及一种背光模组，还涉及一种采用该背光模组的液晶显示装置。
【背景技术】
LCD（液晶显示装置）的背光源一般包括白光LED（发光二极管）和CCFL（Cold Cathode Fluorescent Lamp，冷阴极荧光灯），其中，白光LED相对CCFL来说更加环保、高效。
现有技术中，白色LED主要是利用蓝色发光二极管芯片+YAG（Yttrium Aluminum Garnet，钇铝石榴石，用于产生激光束的氧化铝合成晶石）混合得到白光。但是YAG易被高温氧化而导致的温度猝灭等缺点，在工艺上和应用上存在较大的局限性。白光LED主要是由Phosphor（荧光粉）与Chip（发光芯片）一起封装而成。具体而言，在直下式背光源的白光LED中，为了降低成本，普遍采用大功率的LED（大于1瓦特功率以上），但在使用的过程中，难以有效地进行散热，热量容易对Phosphor产生影响，导致亮度下降、色彩饱和度偏差和色度偏移。
【发明内容】
本发明主要解决现有技术液晶显示装置由于采用荧光粉而导致亮度下降、色彩饱和度偏差和色度偏移的技术问题，提供一种背光模组及液晶显示装置，能够有效地增加亮度、色彩饱和度和避免色度偏移的问题。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种背光模组，该背光模组包括：相对设置的扩散板和基板，该基板为铝质基板以对该发光芯片进行散热；荧光层，设于该扩散板的入光面，该荧光层包括量子点材料，该量子点材料包括硒化镉、硒化锌和硫化镉，该硒化镉、硒化锌和硫化镉按预定质量比例混合制得；发光芯片，该发光芯片包括紫外发光二极管芯片和/或蓝色发光二极管芯片，该发光芯片和该荧光层分离设置，该发光芯片设于该基板上且该发光芯片位于该基板和该荧光层之间，用于照射该荧光层以激发该量子点材料进行发光，进而形成白色背光源。
其中，该背光模组还包括背板，该基板设于该背板的内侧，该背板和该基板之间还设置有反射片。
其中，该背光模组还包括增亮膜，该增亮膜设于该荧光层和该扩散板的入光面之间。
其中，该发光芯片为多个，多个该发光芯片以预定间距间隔设置，该发光芯片到该荧光层的距离为该预定间距的一半。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种背光模组，该背光模组包括扩散板、基板、荧光层和发光芯片。该扩散板和该基板相对设置；该荧光层设于该扩散板的入光面，该荧光层包括量子点材料；该发光芯片设于该基板上且该发光芯片位于该基板和该荧光层之间，用于照射该荧光层以激发该量子点材料进行发光，进而形成背光源。
其中，该量子点材料包括硒化镉、硒化锌和硫化镉，该硒化镉、硒化锌和硫化镉按预定质量比例混合制得以形成白色背光源，该荧光层和该发光芯片分离设置。
其中，该扩散板的入光面设有保护膜，该荧光层涂覆于该保护膜上。
其中，该发光芯片包括紫外发光二极管芯片和/或蓝色发光二极管芯片。
其中，该基板为铝质基板以对该发光芯片进行散热。
其中，该背光模组还包括背板，该基板设于该背板的内侧，该背板和该基板之间还设置有反射片。
其中，该发光芯片的功率大于1瓦特。
其中，该背光模组还包括增亮膜，该增亮膜设于该荧光层和该扩散板的入光面之间。
其中，该发光芯片为多个，多个该发光芯片以预定间距间隔设置，该发光芯片到该荧光层的距离为该预定间距的一半。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种液晶显示装置，该液晶显示装置包括背光模组，该背光模组包括：相对设置的扩散板和基板；荧光层，设于该扩散板的入光面，该荧光层包括量子点材料；发光芯片，设于该基板上且该发光芯片位于该基板和该荧光层之间，用于照射该荧光层以激发该量子点材料进行发光，进而形成背光源。
其中，该量子点材料包括硒化镉、硒化锌和硫化镉，该硒化镉、硒化锌和硫化镉按预定质量比例混合制得以形成白色背光源，该荧光层和该发光芯片分离设置。
其中，该扩散板的入光面设有保护膜，该荧光层涂覆于该保护膜上。
其中，该发光芯片包括紫外发光二极管芯片和/或蓝色发光二极管芯片。
其中，该基板为铝质基板以对该发光芯片进行散热。
其中，该背光模组还包括背板和增亮膜，该基板设于该背板的内侧，该背板和该基板之间还设置有反射片，该增亮膜设于该荧光层和该扩散板的入光面之间。
本发明的有益效果是：区别于现有技术的情况，首先，本发明采用量子点材料替代现有技术荧光层的荧光粉作为发光材料，进而可以通过控制量子点材料的粒径分布并结合发光芯片进行激发发光，能够有效地增加发光的亮度和色彩饱和度，并能有效地避免色度偏移的问题。其次，本发明将量子点材料的荧光层设于扩散板的入光面，可以更加有利于量子点材料的均匀发光，并降低背光模组的厚度。另外，发光芯片与荧光层分离设置，可以有效地避免发光芯片散发的热量对荧光层的量子点材料带来的影响，还可以节约能源、利于环保。
【附图说明】
图1是本发明背光模组一实施例的结构示意图；以及
图2是本发明背光模组另一实施例的结构示意图。
【具体实施方式】
请参阅图1，是本发明背光模组一实施例的结构示意图，在本实施例的背光模组包括但不限于扩散板11、基板12、荧光层13和发光芯片14。
本实施例不对扩散板11的材料作限定，其只需用于对光线进行干涉进而实现光线的均匀扩散即可；在其他实施例中，为了提高扩散板11的耐光性能且不易变黄，可以选择折射率低、透明度高的材料（如塑料水晶等），也可以添加扩散剂等材料以提高其对光线的均匀扩散性能。
基板12与扩散板11之间相对设置，其中，相对设置可以为相互平行间隔设置，也可以为相互倾斜间隔设置，在保证光线均匀扩散的前提下，对其不作限定。基板12可以为铝质基板，即可以采用铝质材料制得基板12，通过铝等散热性能较好的材料以提高基板12的散热性能。此外，基板12上形成有用于进行通电的电路（图未示），在本技术领域人员理解的范围内，不作细述。
荧光层13设于扩散板11的入光面，荧光层13包括量子点材料。具体而言，当荧光层13受光致发光或电致发光等发出光线后，发出的光线直接透光扩散板11的入光面并进入到扩散板11的内部，从而在扩散板11的内部进行干扰并均匀扩散，接着从扩散板11的出光面射出均匀的光线。值得注意的是，本实施例的荧光层13可以直接涂覆于扩散板11的入光面。
需要说明的是，本实施例的量子点材料（Quantum Dot，QD）为半导体纳米微晶体（Semiconductor Nanocrystal），其具体由II-VI族或III-V族元素制得。量子点材料化学结构稳定、溶于水、尺寸半径在2nm（纳米）~20nm之间的纳米晶粒。本实施例采用的量子点材料包括但不限于CdSe（硒化镉）、ZnSe（硒化锌）和CdS（硫化镉）等，其中CdSe、ZnSe和CdS可以按预定质量比例混合制得以形成白色背光源；具体来说，本实施例可以采用一种或多种不同尺寸半径（如三种）的CdSe、ZnSe、CdS等，分别得到RGB三原色光，并通过控制三种尺寸材料的含量，有效混合得到白光；另外，在其他实施例中还可以包括碲化镉（CdTe）等混合使用，在本技术领域人员理解的范围内，不作细述。而在制作成型时，本实施例可以将不同尺寸半径的量子点材料与抗UV（紫外光）树脂材料先进行混合并使其充分均匀，再将其采用喷涂的方式形成于扩散板11的入光面而制得荧光层13。
本实施例荧光层13的量子点材料与传统的荧光粉相比，具有更加丰富的颜色：单一种类的半导体纳米微晶体能够按尺寸变化产生一个发光波长不同的、颜色分明的标记物家族，这是荧光粉等染料分子无法实现的。此外，本实施例的荧光层13激发光谱宽且分布连续；而发射光谱单色性好且颜色可调，并能够承受多次的激发和光发射，有持久的稳定性。具体来说，荧光层13的量子点材料具有宽的激发谱和窄的发射谱，而传统的有机荧光粉等染料的激发光波长范围较窄，不同荧光染料通常需要多种波长的激发光来激发，这给实际的研究工作或使用带来了很多的不便。此外，本实施例的量子点材料具有窄而对称的荧光发射峰，且无拖尾现象，多色量子点材料同时使用时不容易出现光谱交叠。譬如，以ZnS包被的CdSe为例，当CdSe核心直径为1.8nm时，发射蓝光；当CdSe核心直径为7nm时，发射红光；即不同尺寸半径的CdSe的荧光可涵盖整个可见光谱，同理，本实施例的其他两种或三种半导体纳米微晶体具备同样的发光效果，在本技术领域人员理解的范围内，不作细述。
发光芯片14设于基板12上，进一步而言，发光芯片14位于基板12和荧光层13之间，用于照射荧光层13以激发量子点材料进行发光，进而形成背光源。如前所述，本实施例可以采用铝质基板以提高对发光芯片14的散热效果。
需要说明的是，从图1不难看出，本实施例的荧光层13和发光芯片14采用分离设置的方式，即荧光层13设于扩散板11的入光面而发光芯片14设于基板12上。相对于现有技术将荧光层13和发光芯片14统一进行封装的方式而言，本实施例更加有利于量子点材料的均匀发光，并有效地降低背光模组的厚度，另外，本实施例还可以有效地避免发光芯片14散发的热量对荧光层13的量子点材料带来的影响，还可以节约能源、利于环保等。
本实施例的发光芯片14为多个（如第一发光芯片141、第二发光芯片142等等）。本实施例的发光芯片14包括但不限于紫外发光二极管芯片和/或蓝色发光二极管芯片，即发光芯片14可以采用紫外发光二极管芯片，或采用蓝色发光二极管芯片，或同时采用外发光二极管芯片和蓝色发光二极管芯片进行混合使用，在本技术领域人员理解的范围内，不作限定。此外，为了使得发光更加均匀分布，本实施例的多个发光芯片14之间可以以预定间距P间隔设置，而发光芯片14到荧光层13的距离H可以为预定间距P的一半；进一步而言，以该发光芯片14、扩散板11和荧光层13等构成的灯箱的整体厚度可以与预定间距P相等或基本相等，根据发光芯片14与荧光层13的发光角度，即可保证发光效果的均匀分布性能。
此外，本实施例的发光芯片14的功率可以大于1瓦特，譬如采用2瓦特、10瓦特或100瓦特等现有技术中大功率发光芯片。对应地，本实施例的背光模组还可以包括二次透镜（图未示），二次透镜用于改变发光芯片14的发光角度。其中，本实施例的二次透镜可以在将发光芯片14封装到基板12并制得灯条后，再进行设置，以加大发光芯片14的发光角度进而使得发光更加均匀，其具体的制作方式可以采用现有技术，在本技术领域人员理解的范围内，不作限定。此外，本实施例通过二次透镜的作用将发光芯片14的发光角度调整汇聚成5°至160°之间的任意角度，其发光角度实现的光场可以为圆形、椭圆形或矩形等；本实施例的二次透镜可以采用光学级PMMA（聚甲基丙烯酸甲酯）或玻璃等，在此不作限定。
如图1所示，本实施例在扩散板11的入光面还可以设有保护膜15，荧光层13涂覆于保护膜15上。不难理解的是，本实施例的背光模组还可以包括背板16和背框（图未示）等，相应地，基板12设于背板16的内侧。
本实施例采用量子点材料替代现有技术荧光层的荧光粉作为发光材料，进而可以通过控制量子点材料的粒径分布并结合发光芯片14进行激发发光，能够有效地增加发光的亮度和色彩饱和度，并能有效地避免色度偏移的问题。其次，本实施例将量子点材料的荧光层13设于扩散板11的入光面，可以更加有利于量子点材料的均匀发光，并降低背光模组的厚度。另外，发光芯片14与荧光层13分离设置，可以有效地避免发光芯片14散发的热量对荧光层13的量子点材料带来的影响，还可以节约能源、利于环保。
请参阅图2，是本发明背光模组另一实施例的结构示意图，在本实施例的背光模组包括但不限于扩散板21、基板22、荧光层23、发光芯片24、保护膜25、背板26、反射片27和增亮膜28等。
本实施例扩散板21可以选择折射率低、透明度高的材料（如塑料水晶等），也可以添加扩散剂等材料以提高其对光线的均匀扩散性能。
基板22与扩散板21之间相对设置，基板22可以为铝质基板，即可以采用铝质材料制得基板22，通过铝等散热性能较好的材料以提高基板22的散热性能。此外，基板22上形成有用于进行通电的电路（图未示），在本技术领域人员理解的范围内，不作细述。
荧光层23设于扩散板21的入光面，荧光层23包括量子点材料。具体而言，当荧光层23受光致发光或电致发光等发出光线后，发出的光线直接透光扩散板21的入光面并进入到扩散板21的内部，从而在扩散板21的内部进行干扰并均匀扩散，接着从扩散板21的出光面射出均匀的光线。值得注意的是，本实施例的荧光层23可以直接涂覆于扩散板21的入光面。
需要说明的是，本实施例的量子点材料具体可以由II-VI族或III-V族元素制得。本实施例采用的量子点材料包括但不限于CdSe、ZnSe和CdS等并可以按预定质量比例混合制得以形成白色背光源；具体来说，本实施例可以采用一种或多种不同尺寸半径（如三种）的CdSe、ZnSe、CdS等，分别得到RGB三原色光，并通过控制三种尺寸材料的含量，有效混合得到白光；另外，在其他实施例中还可以包括CdTe等混合使用，在本技术领域人员理解的范围内，不作细述。而在制作成型时，本实施例可以将不同尺寸半径的量子点材料与抗UV树脂材料先进行混合并使其充分均匀，再将其采用喷涂的方式形成于扩散板21的入光面而制得荧光层23。
本实施例荧光层23的量子点材料具有宽的激发谱和窄的发射谱，而传统的有机荧光粉等染料的激发光波长范围较窄，不同荧光染料通常需要多种波长的激发光来激发，这给实际的研究工作或使用带来了很多的不便。此外，本实施例的量子点材料具有窄而对称的荧光发射峰，且无拖尾现象，多色量子点材料同时使用时不容易出现光谱交叠。譬如，以ZnS包被的CdSe为例，当CdSe核心直径为1.8nm时，发射蓝光；当CdSe核心直径为7nm时，发射红光；即不同尺寸半径的CdSe的荧光可涵盖整个可见光谱，同理，本实施例的其他两种或三种半导体纳米微晶体具备同样的发光效果，在本技术领域人员理解的范围内，不作细述。
发光芯片24设于基板22上，进一步而言，发光芯片24位于基板22和荧光层23之间，用于照射荧光层23以激发量子点材料进行发光，进而形成背光源。如前所述，本实施例可以采用铝质基板以提高对发光芯片24的散热效果。
需要说明的是，从图2不难看出，本实施例的荧光层23和发光芯片24采用分离设置的方式，即荧光层23设于扩散板21的入光面而发光芯片24设于基板22上。相对于现有技术将荧光层23和发光芯片24统一进行封装的方式而言，本实施例更加有利于量子点材料的均匀发光，并有效地降低背光模组的厚度，另外，本实施例还可以有效地避免发光芯片24散发的热量对荧光层23的量子点材料带来的影响，还可以节约能源、利于环保等。
本实施例的发光芯片24为多个（如第一发光芯片241、第二发光芯片242等等）。本实施例的发光芯片24包括但不限于紫外发光二极管芯片和/或蓝色发光二极管芯片，即发光芯片24可以采用紫外发光二极管芯片，或采用蓝色发光二极管芯片，或同时采用外发光二极管芯片和蓝色发光二极管芯片进行混合使用，在本技术领域人员理解的范围内，不作限定。此外，为了使得发光更加均匀分布，本实施例的多个发光芯片24之间可以以预定间距P间隔设置，而发光芯片24到荧光层23的距离H可以为预定间距P的一半；进一步而言，以该发光芯片24、扩散板21和荧光层23等构成的灯箱的整体厚度可以与预定间距P相等或基本相等，根据发光芯片24与荧光层23的发光角度，即可保证发光效果的均匀分布性能。
此外，本实施例的发光芯片24的功率可以大于1瓦特，譬如采用2瓦特、10瓦特或100瓦特等现有技术中大功率发光芯片。对应地，本实施例的背光模组还可以包括二次透镜（图未示），二次透镜用于改变发光芯片24的发光角度。其中，本实施例的二次透镜可以在将发光芯片24封装到基板22并制得灯条后，再进行设置，以加大发光芯片24的发光角度进而使得发光更加均匀，其具体的制作方式可以采用现有技术，在本技术领域人员理解的范围内，不作限定。
本实施例的荧光层23涂覆于保护膜25上。基板22设于背板26的内侧，且与前面实施例不同之处在于，在背板26和基板22之间还可以设置有反射片27，反射片27可以设于背板26的内侧。本实施例通过反射片27的作用，可以有效地提高背光模组的发光性能和均匀性能。
为了进一步提高背光模组的发光效果并改善液晶显示装置的显示性能，本实施例在保护膜25和扩散板21的入光面之间还设有该增亮膜28。本实施例通过增亮膜28的作用可以改善背光模组的发光效率，其可以为普通的棱镜片（normal prism sheet）、多功能棱镜片、micro-lens film和反射型偏光片（reflective polarizer）等，在本技术领域人员理解的范围，不作限定。
本实施例背光模组采用量子点材料替代现有技术荧光层的荧光粉作为发光材料，进而可以通过控制量子点材料的粒径分布并结合发光芯片24进行激发发光，能够有效地增加发光的亮度和色彩饱和度，并能有效地避免色度偏移的问题。其次，本实施例将量子点材料的荧光层23设于扩散板21的入光面，可以更加有利于量子点材料的均匀发光，并降低背光模组的厚度。另外，发光芯片24与荧光层23分离设置，可以有效地避免发光芯片24散发的热量对荧光层23的量子点材料带来的影响，还可以节约能源、利于环保。
本发明实施例还提供一种液晶显示装置，该液晶显示装置可以包括前面一个或多个实施例相关描述的背光模组，其中，不难看出，该背光模组采用直下式背光源，此外，本实施例液晶显示装置还可以包括液晶面板和前框等，在本技术领域人员理解的范围内，不作细述和限定。
本实施例液晶显示装置的背光模组采用量子点材料替代现有技术荧光层的荧光粉作为发光材料，进而可以通过控制量子点材料的粒径分布并结合发光芯片进行激发发光，能够有效地增加发光的亮度和色彩饱和度，并能有效地避免色度偏移的问题。其次，本实施例将量子点材料的荧光层设于扩散板的入光面，可以更加有利于量子点材料的均匀发光，并降低背光模组的厚度。另外，发光芯片与荧光层分离设置，可以有效地避免发光芯片散发的热量对荧光层的量子点材料带来的影响，还可以节约能源、利于环保。
以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (19)

  1. 一种背光模组，其中，所述背光模组包括：
    相对设置的扩散板和基板，所述基板为铝质基板以对所述发光芯片进行散热；
    荧光层，设于所述扩散板的入光面，所述荧光层包括量子点材料，所述量子点材料包括硒化镉、硒化锌和硫化镉，所述硒化镉、硒化锌和硫化镉按预定质量比例混合制得；
    发光芯片，所述发光芯片包括紫外发光二极管芯片和/或蓝色发光二极管芯片，所述发光芯片和所述荧光层分离设置，所述发光芯片设于所述基板上且所述发光芯片位于所述基板和所述荧光层之间，用于照射所述荧光层以激发所述量子点材料进行发光，进而形成白色背光源。
  2. 根据权利要求1所述的背光模组，其中，所述背光模组还包括背板，所述基板设于所述背板的内侧，所述背板和所述基板之间还设置有反射片。
  3. 根据权利要求1所述的背光模组，其中，所述背光模组还包括增亮膜，所述增亮膜设于所述荧光层和所述扩散板的入光面之间。
  4. 根据权利要求1所述的背光模组，其中，所述发光芯片为多个，多个所述发光芯片以预定间距间隔设置，所述发光芯片到所述荧光层的距离为所述预定间距的一半。
  5. 一种背光模组，其中，所述背光模组包括：
    相对设置的扩散板和基板；
    荧光层，设于所述扩散板的入光面，所述荧光层包括量子点材料；
    发光芯片，设于所述基板上且所述发光芯片位于所述基板和所述荧光层之间，用于照射所述荧光层以激发所述量子点材料进行发光，进而形成背光源。
  6. 根据权利要求5所述的背光模组，其中，所述量子点材料包括硒化镉、硒化锌和硫化镉，所述硒化镉、硒化锌和硫化镉按预定质量比例混合制得以形成白色背光源，所述荧光层和所述发光芯片分离设置。
  7. 根据权利要求6所述的背光模组，其中，所述扩散板的入光面设有保护膜，所述荧光层涂覆于所述保护膜上。
  8. 根据权利要求5所述的背光模组，其中，所述发光芯片包括紫外发光二极管芯片和/或蓝色发光二极管芯片。
  9. 根据权利要求8所述的背光模组，其中，所述基板为铝质基板以对所述发光芯片进行散热。
  10. 根据权利要求8所述的背光模组，其中，所述背光模组还包括背板，所述基板设于所述背板的内侧，所述背板和所述基板之间还设置有反射片。
  11. 根据权利要求8所述的背光模组，其中，所述发光芯片的功率大于1瓦特。
  12. 根据权利要求11所述的背光模组，其中，所述背光模组还包括增亮膜，所述增亮膜设于所述荧光层和所述扩散板的入光面之间。
  13. 根据权利要求8所述的背光模组，其中，所述发光芯片为多个，多个所述发光芯片以预定间距间隔设置，所述发光芯片到所述荧光层的距离为所述预定间距的一半。
  14. 一种液晶显示装置，其中，所述液晶显示装置包括背光模组，所述背光模组包括：
    相对设置的扩散板和基板；
    荧光层，设于所述扩散板的入光面，所述荧光层包括量子点材料；
    发光芯片，设于所述基板上且所述发光芯片位于所述基板和所述荧光层之间，用于照射所述荧光层以激发所述量子点材料进行发光，进而形成背光源。
  15. 根据权利要求14所述的背光模组，其中，所述量子点材料包括硒化镉、硒化锌和硫化镉，所述硒化镉、硒化锌和硫化镉按预定质量比例混合制得以形成白色背光源，所述荧光层和所述发光芯片分离设置。
  16. 根据权利要求15所述的背光模组，其中，所述扩散板的入光面设有保护膜，所述荧光层涂覆于所述保护膜上。
  17. 根据权利要求14所述的背光模组，其中，所述发光芯片包括紫外发光二极管芯片和/或蓝色发光二极管芯片。
  18. 根据权利要求17所述的背光模组，其中，所述基板为铝质基板以对所述发光芯片进行散热。
  19. 根据权利要求17所述的背光模组，其中，所述背光模组还包括背板和增亮膜，所述基板设于所述背板的内侧，所述背板和所述基板之间还设置有反射片，所述增亮膜设于所述荧光层和所述扩散板的入光面之间。
PCT/CN2013/071318 2013-01-30 2013-02-04 背光模组及液晶显示装置 Ceased WO2014117400A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/818,987 US9273851B2 (en) 2013-01-30 2013-02-04 Backlight module and liquid crystal display device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201310036146.7A CN103090277B (zh) 2013-01-30 2013-01-30 背光模组及液晶显示装置
CN201310036146.7 2013-01-30

Publications (1)

Publication Number Publication Date
WO2014117400A1 true WO2014117400A1 (zh) 2014-08-07

Family

ID=48203198

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2013/071318 Ceased WO2014117400A1 (zh) 2013-01-30 2013-02-04 背光模组及液晶显示装置

Country Status (2)

Country Link
CN (1) CN103090277B (zh)
WO (1) WO2014117400A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111781772A (zh) * 2020-07-16 2020-10-16 东莞市中麒光电技术有限公司 Led背光源、led背光模组及制备方法
CN113947996A (zh) * 2021-09-28 2022-01-18 常州亚玛顿股份有限公司 一种背光模组

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103447247B (zh) * 2013-09-02 2015-12-23 深圳市华星光电技术有限公司 适用于背光模组的荧光粉光学膜片的筛选方法及背光模组
CN104948942A (zh) * 2014-03-31 2015-09-30 上海海贝电控设备科技有限公司 量子能量光照结构
CN104049410A (zh) * 2014-06-17 2014-09-17 福州大学 一种用于量子点增强膜的增透膜及其制备方法
CN104154468B (zh) 2014-09-01 2016-08-31 深圳市华星光电技术有限公司 背光模组
CN104516039B (zh) * 2014-12-23 2018-04-27 深圳市华星光电技术有限公司 量子点彩色滤光片的制作方法及液晶显示装置
CN104534358A (zh) * 2014-12-24 2015-04-22 南京中电熊猫液晶显示科技有限公司 一种背光模组及3d显示装置
CN204441293U (zh) * 2015-02-15 2015-07-01 深圳Tcl新技术有限公司 半导体纳米晶体管、发光组件及液晶电视
CN104698680A (zh) * 2015-03-11 2015-06-10 青岛海信电器股份有限公司 模组和显示设备
CN106501994B (zh) * 2015-09-08 2021-10-29 青岛海信电器股份有限公司 一种量子点发光器件、背光模组及显示装置
CN105301836A (zh) * 2015-11-10 2016-02-03 青岛海信电器股份有限公司 直下式背光模组及显示装置
CN105301841A (zh) * 2015-11-23 2016-02-03 青岛海信电器股份有限公司 一种背光模组和液晶显示设备
CN105911754A (zh) * 2016-05-05 2016-08-31 京东方科技集团股份有限公司 背光源和显示装置
CN106195785A (zh) * 2016-08-17 2016-12-07 宁波东旭成新材料科技有限公司 色彩校正光学薄膜
CN108269886B (zh) 2016-12-30 2019-12-10 Tcl集团股份有限公司 一种量子点材料、制备方法及半导体器件
CN108264903A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种量子点照明模组及照明设备
CN108264900A (zh) 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种量子点复合材料、制备方法及半导体器件
CN106707619A (zh) * 2017-01-16 2017-05-24 深圳市国显科技有限公司 一种白色面光源及其液晶显示器
CN110998880A (zh) * 2017-01-27 2020-04-10 莉莉布兰德有限责任公司 具有高显色指数和均匀平面照明的照明系统
CN206741157U (zh) * 2017-04-19 2017-12-12 深圳Tcl新技术有限公司 Led灯源、灯条及显示装置
CN106980208B (zh) * 2017-05-18 2023-04-14 常州丰盛光电科技股份有限公司 光可控型量子点背光源
CN107195752A (zh) * 2017-05-26 2017-09-22 青岛海信电器股份有限公司 一种led、背光模组和显示装置
CN107369676B (zh) * 2017-08-02 2019-12-10 厦门市三安光电科技有限公司 一种紫外led模组结构
CN109491138A (zh) * 2017-12-26 2019-03-19 淮南师范学院 一种光电显示器
CN108732816B (zh) * 2018-05-22 2021-06-25 武汉华星光电技术有限公司 面光源背光模组及液晶显示面板
CN108873480A (zh) * 2018-08-01 2018-11-23 京东方科技集团股份有限公司 一种led光源、背光源及显示装置
CN110456560A (zh) * 2019-07-29 2019-11-15 武汉华星光电技术有限公司 一种显示面板及其显示装置
CN112987390A (zh) * 2019-12-13 2021-06-18 海信视像科技股份有限公司 一种显示装置
CN113885253B (zh) * 2021-10-15 2022-09-13 广东瑞捷光电股份有限公司 一种光效利用率高的量子点扩散板及其加工设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101034232A (zh) * 2006-03-09 2007-09-12 台达电子工业股份有限公司 背光模块及其发光装置
US7982812B2 (en) * 2007-10-09 2011-07-19 Samsung Electronics Co., Ltd. Display device
CN102759050A (zh) * 2012-07-09 2012-10-31 创维液晶器件(深圳)有限公司 背光模组及液晶显示装置
US20120274882A1 (en) * 2011-02-14 2012-11-01 Muntae Jung Lighting apparatus and display device including the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080075976A (ko) * 2007-02-14 2008-08-20 엘지디스플레이 주식회사 액정표시장치용 백라이트 유닛
CN101232070A (zh) * 2008-01-31 2008-07-30 中国计量学院 单芯量子点白光led的发光装置
JP5242723B2 (ja) * 2011-03-02 2013-07-24 パナソニック液晶ディスプレイ株式会社 液晶表示装置
CN202613209U (zh) * 2012-03-27 2012-12-19 苏州东山精密制造股份有限公司 一种直下式led背光模组及采用该模组的液晶显示屏
CN102767760B (zh) * 2012-07-06 2014-06-25 广州市鸿利光电股份有限公司 一种直下式液晶电视背光模组
CN102798060B (zh) * 2012-09-11 2015-10-07 深圳市华星光电技术有限公司 直下式背光模组

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101034232A (zh) * 2006-03-09 2007-09-12 台达电子工业股份有限公司 背光模块及其发光装置
US7982812B2 (en) * 2007-10-09 2011-07-19 Samsung Electronics Co., Ltd. Display device
US20120274882A1 (en) * 2011-02-14 2012-11-01 Muntae Jung Lighting apparatus and display device including the same
CN102759050A (zh) * 2012-07-09 2012-10-31 创维液晶器件(深圳)有限公司 背光模组及液晶显示装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111781772A (zh) * 2020-07-16 2020-10-16 东莞市中麒光电技术有限公司 Led背光源、led背光模组及制备方法
CN113947996A (zh) * 2021-09-28 2022-01-18 常州亚玛顿股份有限公司 一种背光模组
CN113947996B (zh) * 2021-09-28 2024-03-26 常州亚玛顿股份有限公司 一种背光模组

Also Published As

Publication number Publication date
CN103090277B (zh) 2015-08-19
CN103090277A (zh) 2013-05-08

Similar Documents

Publication Publication Date Title
WO2014117400A1 (zh) 背光模组及液晶显示装置
CN101937911B (zh) 发光二极管封装构造及背光模块
WO2016086416A1 (zh) 一种量子点背光模组以及显示装置
CN103343943A (zh) 显示装置的背光模组以及白光led
WO2016054838A1 (zh) 直下式背光模组及其制造方法
CN205103524U (zh) 背光模组及显示装置
WO2010036070A2 (ko) 고효율 유기발광소자 및 이의 제조 방법
CN105301827A (zh) 量子点彩膜基板的制备方法及量子点彩膜基板
WO2018120502A1 (zh) 背光模块及显示装置
CN101871598B (zh) 具有光线补色区域的背光模块
US20090034288A1 (en) Light emitting diode package, direct type backlight module and edge type backlight module
WO2020025054A1 (zh) 一种发光装置及其制备方法
WO2017156902A1 (zh) 量子点背光模组及液晶电视
CN110534631A (zh) 一种led结合钙钛矿量子点微晶玻璃的显示用宽色域背光源
CN106772769A (zh) 背光模块及其应用的显示设备与导光板的制造方法
CN109426034A (zh) 液晶显示装置
WO2013185364A1 (zh) 面光源及显示装置
US9273851B2 (en) Backlight module and liquid crystal display device
CN203771224U (zh) 一种显示装置及其背光模组
Cheng et al. Multicolour LED lighting achieved by an array phosphor-converted film and blue-LED chip
US20210080636A1 (en) Backlight module and a display device
WO2016201749A1 (zh) 量子管发光装置、背光模组及液晶显示器
US20080170176A1 (en) Backlight Module Having Phosphor Layer and Liquid Crystal Display Device Using the Same
CN101852342A (zh) 一种led光源及背光模组
CN204739537U (zh) 广色域光学膜片及led背光模组

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 13818987

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13873379

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 13873379

Country of ref document: EP

Kind code of ref document: A1