WO2014091003A1

WO2014091003A1 - Method and device for producing a light-emitting diode

Info

Publication number: WO2014091003A1
Application number: PCT/EP2013/076575
Authority: WO
Inventors: Hans-Christoph Gallmeier; Markus Richter; Tony Albrecht; Alexander Baumgartner
Original assignee: Osram Opto Semiconductors Gmbh
Priority date: 2012-12-14
Filing date: 2013-12-13
Publication date: 2014-06-19
Also published as: DE102012112316A1

Abstract

The invention relates to a method for producing at least one radiation-emitting semiconductor component (11), comprising the following steps: providing at least one radiation-emitting semiconductor chip (4) having a top side (6) and at least one side surface (7), which extends at a slant with respect to the top side (6), applying a conversion element (8) to the top side (6) and/or the at least one side surface (7) by spraying said conversion element on, wherein the conversion element (8) is produced from a spraying agent (2b) that contains a matrix material and converter particles.

Description

description

METHOD AND DEVICE FOR PRODUCING AN ILLUMINATED DIODE

Method and device for producing a radiation-emitting semiconductor component and radiation

emitting semiconductor device

A method for producing a radiation-emitting semiconductor component is specified. Furthermore, a device is specified with which a radiation-emitting semiconductor component is produced

Finally, a radiation-emitting

Semiconductor device specified.

The publication DE 10 2009 051 748 A1, for example, describes a method for producing a semiconductor component which generates mixed light during operation and has a semiconductor chip and a conversion element. Around

To achieve mixed light with a predetermined color location, the conversion element is removed in places by means of laser radiation.

An object to be solved in the present case is to provide a non-destructive method for producing a radiation-emitting semiconductor component which emits radiation having a predetermined color location. Further objects are an apparatus for producing a radiation-emitting semiconductor component and a

Specify radiation-emitting semiconductor device which emits radiation having a predetermined color location.

These objects are achieved by a method, a device and an article according to the independent patent claims. Advantageous embodiments and developments The subject matter and the method are indicated in the dependent claims and continue to be understood from the

following description and the drawings. In accordance with at least one embodiment of the method, at least one radiation is emitted in one step

Semiconductor chip having an upper side and at least one side surface, which extends obliquely, in particular perpendicularly, to the upper side provided. The "at least one side surface" is understood to mean that the semiconductor chip in particular has only one side surface when the

Semiconductor chip is cylindrical. The side surface is then formed by the lateral surface of the cylinder. If the semiconductor chip is cuboid, it has, in particular, four side surfaces. For generating electromagnetic primary radiation includes the

Semiconductor chip, preferably an active zone. The primary radiation generated during operation leaves the semiconductor chip

at least in part through the top. Furthermore, a part of the primary radiation through the at least one

Side surface emerge from the semiconductor chip.

In a further method step is a

Conversion element applied to the top and / or the at least one side surface of the semiconductor chip. The

Top can be partially or completely of the

Conversion element to be covered. Additionally or alternatively, the at least one side surface partially or

completely covered by the conversion element.

The conversion element is applied by spraying (English: spray coating) on the semiconductor chip.

Preferably, the conversion element of a Spray produces a matrix material and

Contains converter particles. In particular, this surrounds

Matrix material, the converter particles already in the spray. The converter particles are distributed, for example, in the matrix material and surrounded on all sides by the matrix material. The

Matrix material after application may provide good adhesion between the semiconductor chip and the converter particles. For example, a resin-based matrix material may be used. Furthermore, a silicone material is suitable as a matrix material.

Furthermore, the spraying agent preferably contains a

Solvent that dilutes the mixture of converter particles and matrix material and thus spraying the

Conversion element facilitates. For example, a heptane can be used as a solvent. A heptane is particularly useful when using a silicone-containing matrix material. In a further method step, after the application of the conversion element, a color location measurement on the

Semiconductor chip performed. Here, the color location of the mixed light emitted by the semiconductor chip and the

Conversion element is emitted, measured. Further, a difference between the measured color location and a

predetermined target color location determined. When the measured

Color location deviates from the target color location, spraying is sprayed on in a next step further. This process- measurement of the color locus, comparison with the target color location, further spraying of Sprühmittel- is

preferably repeated until the measured color location corresponds to the destination color location. In the present case, the color loci are considered to be the same if no difference between the two color loci is discernible by the human standard observer. The color locus can be specified in Cx, Cy coordinates of the CIE standard color chart.

For example, the color loci match when the

Distance in the CIE standard color chart less than 0.05,

preferably less than 0.025, more preferably less than 0.01. In accordance with at least one embodiment of the method, in the production of the conversion element, the spraying agent is applied to the semiconductor chip in a plurality of layers. This allows a uniform application of the

Conversion element. For example, a first spray may be generated to produce a first layer. To produce a second layer, a second spray can be generated. You can take a break between the sprays, during which time the spray can solidify to a thin layer. A minimal

Layer thickness can be determined by a particle size of the

Converter particles are determined. The layer thickness of a layer is preferably between 3 μm and 15 μm.

In particular, the layer thickness is about 5 μιη. Furthermore, between three and ten layers are preferably applied to the semiconductor chip for producing the conversion element. That is, the conversion element has

preferably between three and ten layers.

In particular, the layers are made of the same

Spray prepared.

In accordance with at least one embodiment of the method, a first measurement of the color location is carried out after the application of several layers. For example, first three layers be sprayed on. Then the color locus of the generated

Mixed light measured. After measuring the color location

decides whether the specified target color location has already been reached or whether another layer is to be applied in order to reach the given target color location.

In a preferred embodiment of the method, the radiation-emitting semiconductor chip is used for measuring the

Farborts electrically operated. The radiation-emitting semiconductor chip is electrically connected and generates during operation primary radiation, which is at least partially converted by the conversion element into secondary radiation.

In accordance with at least one embodiment of the method, a plurality of radiation is produced in a first method step

emitting semiconductor chips in a first composite

provided that generate in operation primary radiation in a first wavelength range. The semiconductor chips of the composite are pre-sorted according to their primary wavelength.

In a next procedural step will be on each

Semiconductor chip applied a conversion element.

Subsequently, in each semiconductor chip, the color location of the semiconductor chip and conversion element generated

Mixed light measured.

For the type of spraying a spray parameter is obtained. For example, the spray parameter may be the number of

Include sprays.

In a further method step, a plurality of radiation-emitting semiconductor chips in a second composite

provided in operation primary radiation in the first Generate wavelength range. These semiconductor chips are presorted according to their primary wavelength. In a further method step, an input is made to each semiconductor chip

Applied conversion element. Advantageously, the spraying is determined by the spraying parameter used in the

Spraying was obtained in connection with the first composite. This eliminates post-spraying the second composite.

In an advantageous embodiment of the method, a plurality of radiation-emitting semiconductor chips are mounted on a common connection carrier and electrically

connected. Subsequently, the conversion elements are applied to the semiconductor chips. Subsequently, the semiconductor chips may be provided, for example, with a housing or an optical element. The composite off

Connection carrier and semiconductor chips is isolated, so that several radiation emitting semiconductor devices

arise. Here, the common connection carrier is divided into several connection carrier, so that the finished

Semiconductor components each have a connection carrier

exhibit .

The method described above enables efficient production of semiconductor devices that are in operation

Generate mixed light. Advantageously, in the case of the semiconductor components thus produced, a comparatively narrow color locus distribution can be realized. In accordance with at least one embodiment, a radiation-emitting semiconductor component, which is preferably produced by means of the method described above, comprises a radiation-emitting semiconductor chip with an upper side and at least one side surface, through which at least a portion of the primary radiation generated during operation

A semiconductor chip leaves, and a conversion element which is in direct contact with at least parts of the upper side and / or the at least one side surface and is intended to convert at least a portion of the emitted primary radiation into secondary radiation, wherein the

Conversion element is sprayed on the top and / or the at least one side surface. In particular, the side surface is inclined, in particular perpendicular, to the

Top.

It is a device specified, in particular for the production of a radiation-emitting

Semiconductor device having the above properties is suitable. That is, all for the process

disclosed features are also disclosed for the device and vice versa. In accordance with at least one embodiment, the device comprises a spraying device which contains a spraying means for producing a conversion element.

Furthermore, the device comprises a measuring device for measuring a color locus of mixed light, which of a

Radiation emitting semiconductor chip and the applied on an upper side and / or on at least one side surface of the semiconductor chip conversion element is emitted.

Furthermore, the device comprises a control unit which is adapted to control a method, wherein in a first method step the spraying means by means of Spray device is sprayed onto the radiation-emitting semiconductor chip. In a next

Process step, the color location of the mixed light is measured by means of the measuring device. In another

Process step, a difference between the measured color location and a predetermined target color location is determined.

The spray is further sprayed by the sprayer when the measured color location deviates from the target color location. The step measurement of the color locus, comparison with the target color locus, further spraying of sprays may be repeated until the measured color locus corresponds to the destination color locus.

According to an advantageous embodiment of the device, the spraying device has a spray head, by means of which a plurality of radiation-emitting semiconductor chips are sprayed. In particular, a composite of semiconductor chips is sprayed with only one spray head. For example, the

Spray head are moved across the semiconductor chip away.

Further advantages, advantageous embodiments and

Further developments emerge from the following in

Compound described with the figures

Exemplary embodiments.

Show it:

Figures 1 to 3 is a schematic representation of one here

described apparatus with which a method according to an embodiment for producing a

Radiation emitting semiconductor device

can be performed, and FIG. 4 shows a schematic sectional representation of a radiation-emitting semiconductor component according to a

Embodiment. The same, similar or equivalent elements are provided in the figures with the same reference numerals. The figures and the proportions in the figures

Elements shown with each other are not as

to scale. Rather, individual elements for better presentation and / or for better

Comprehensibility must be exaggerated.

FIG. 1 shows a device (not marked) with which a method for producing a radiation

emitting semiconductor device can be performed. The device comprises a control unit 1, the

For example, at least one microprocessor for

Implementation of a method described herein. Furthermore, the device comprises a spray device 2, which is provided for generating a conversion element. The spray device 2 is connected to the control unit 1. The spray device 2 comprises, for example, a spray head 2a. The spray device 2, in particular the spray head 2a, has a spray 2b for generating the conversion element. Preferably, the spraying agent 2b contains a matrix material and converter particles. Particularly preferably contains

Spray 2b additionally a solvent. In particular, the matrix material is formed from a resin-based or silicone-containing material.

For example, at least one of the following materials is suitable for the converter particles: Garnets doped with rare earth metals, with

Rare earth metals doped alkaline earth sulfides with rare earth doped thiogallates

Rare earth metals doped aluminates, rare earth doped orthosilicates, rare earth doped chlorosilicates, rare earth doped alkaline earth silicon nitrides, with

Rare earth metals doped oxynitrides, rare earth-doped aluminum oxynitrides.

Preferably, the converter particles are doped

Garnets such as Ce or Tb activated garnets such as YAG: Ce, TAG: Ce, TbYAG: Ce formed.

As shown in Figure 2, the apparatus further comprises a measuring device 3, which is provided for determining a color location. The measuring device 3 comprises, for example, at least one photodiode and / or at least one CCD sensor. The measuring device 3 is connected to the

Control unit 1 connected.

The device will now use the following procedure

carried out :

The device becomes a composite of radiation

emitting semiconductor chips 4 introduced (see Figure 1). The radiation-emitting semiconductor chips 4 are arranged on a common connection carrier 5. The connection carrier 5 has, for example, a plurality of first connection regions 5a and a plurality of second connection regions 5b. A radiation-emitting semiconductor chip 4 is in each case connected to a first Connecting portion 5a and a second connection portion 5b electrically connected.

On an upper side 6 and / or side surfaces 7 of

Semiconductor chips 4 spraying agent 2b is sprayed. From the

Spraying means 2b, the conversion elements 8 are generated (see Figures 1 and 2). For example, the spraying agent 2b may be applied in layers. The layers are produced successively by individual sprays. After about three layers, a first measurement of the color location can be made.

For measuring the color locus, the semiconductor chips 4

Electrically operated. In operation, the emit

Semiconductor chips 4 primary radiation 9a, which is at least partially converted by the respective conversion element 8 in secondary radiation 9b. By way of example, the radiation-emitting semiconductor chips 4 can emit blue light which is at least partially converted by the respective conversion element 8 into green and / or red and / or yellow light, so that the finished semiconductor components emit white light during operation. Mixed light resulting from the

Primary radiation 9a and the secondary radiation 9b

composed, applies to the measuring device 3 (see Figure 2). By means of the measuring device 3 is for each

Semiconductor chip 4, the color location of the mixed light measured.

Further, by means of the control unit 1 for each

Semiconductor chip 4 is a difference between the measured

Color location and a predetermined destination color location determined. If, in a semiconductor chip 4, the measured color location of the

Deviates target color location, spraying is further sprayed 2b accordingly. This process measurement of the color locus,

Comparison with the target color location, further spraying of Spray means 2b-may be repeated for each semiconductor chip 4 until the measured color location corresponds to the target color location. If the predefined target color location is reached in each semiconductor chip 4, the semiconductor chips 4 can each be provided with a housing 10 (cf., FIG. 3). For example, the housing 10 may be formed from a clear potting. Preferably, the housings 10 are formed as a lens.

After the manufacture of the housing 10, the composite

are singulated, so that a plurality of radiation emitting semiconductor devices 11 are formed (see Figure 4). In this case, the common connection carrier 5 is divided in such a way that each radiation-emitting semiconductor component 11 has a

Connection carrier 5 has.

A semiconductor device 11 thus formed comprises one

Radiation emitting semiconductor chip 4 having a top 6 and a plurality of side surfaces 7, through which at least a portion of the primary radiation 9a generated in operation the

Semiconductor chip 4 leaves, and comprises a conversion element 8, which is in direct contact with at least parts of the top 6 and / or the side surfaces 7 and is intended to convert at least a portion of the emitted primary radiation 9a in secondary radiation 9b,

the conversion element 8 is sprayed onto the upper side 6 and / or the side surfaces 7. In a further method step, a second composite with a plurality of semiconductor chips can be introduced into the device (not shown). Spraying sprayer is then determined by a spray parameter, which in the

Related to the first composite.

The invention is not limited by the description based on the embodiments of these. Rather, the invention encompasses every new feature as well as every combination of features, which in particular includes any combination of features in the patent claims, even if this feature or this combination itself is not explicitly described in the claims

Claims or embodiments is given.

This patent application claims the priority of German Patent Application 102012112316.0, the disclosure of which is hereby incorporated by reference.

Claims

claims

1. A method for producing at least one radiation-emitting semiconductor component (11) with the following steps:

Providing at least one radiation-emitting semiconductor chip (4) with an upper side (6) and at least one side surface (7) running obliquely to the upper side (6),

- Applying a conversion element (8) on the top (6) and / or the at least one side surface (7) by means of spraying, wherein the conversion element (8) consists of a

Spray (2b) is produced, which contains a matrix material and converter particles.

2. The method according to the preceding claim, wherein

after applying the conversion element (8), the following steps take place:

a. Measurement of a color locus of mixed light, that of the

Semiconductor chip (4) and the conversion element (8) is emitted,

b. Determining a difference between the measured color location and a predetermined destination color location,

c. Further spraying spray (2b) if the measured color location deviates from the target color location.

3. The method according to the preceding claim, wherein steps a, b and c are repeated until the measured color locus corresponds to the destination color locus.

4. The method according to any one of the preceding claims, wherein for the production of the conversion element (8), the spraying means (2b) is applied to the semiconductor chip (4) in a plurality of layers.

5. The method of claim 4, wherein

For producing the conversion element (8), three to ten layers are applied to the semiconductor chip (4).

6. The method of claim 4 or 5, wherein the layer thickness of a layer between 3 μιη and 15 μιη.

A method according to any one of claims 4 to 6, wherein the layers are made from the same spray.

8. The method according to any one of claims 2 to 7, wherein a first measurement of the color location after the application of several

Layers done.

9. The method according to any one of claims 2 to 8, wherein

the radiation-emitting semiconductor chip (4) is operated electrically for measuring the color locus and in operation

Primary radiation (9a) generates, which is converted by the conversion element (8) at least partially in secondary radiation (9b).

10. The method according to any one of the preceding claims, wherein the spraying agent (2b) additionally contains a solvent.

11. The method according to any one of claims 2 to 10, wherein

- Providing a plurality of radiation-emitting semiconductor chips (4) in a first composite, in operation

Generate primary radiation (9a) in a first wavelength range, - Applied to each semiconductor chip (4) a conversion element (8) and the color location is measured,

- a spraying parameter is obtained for the type of spraying,

- A plurality of radiation-emitting semiconductor chips (4) are provided in a second composite, in operation

Generate primary radiation (9a) in the first wavelength range, wherein each semiconductor chip (4) a

Conversion element (8) applied and the nature of

Spraying is determined by the obtained spray parameters.

12. The method of claim 11, wherein

the radiation emitting semiconductor chips (4) of the first or second composite prior to the application of the

Conversion element (8) each on a common

Connection carrier (5) mounted and electrically connected.

13. The method of claim 12, wherein

for producing a plurality of radiation-emitting

Semiconductor components (11) of the common connection carrier (5) is divided into a plurality of connection carrier (5), so that the finished semiconductor devices (11) each have a

Have connection carrier (5).

14. Apparatus for producing a radiation-emitting semiconductor component (11)

a spraying device (2) containing a spraying means (2b) for producing a conversion element (8),

- A measuring device (3) for measuring a color locus of mixed light emitted by a radiation

Semiconductor chip (4) and on a top side (6) and / or is emitted on at least one side surface (7) of the semiconductor chip (4) applied conversion element (8),

a control unit (1) adapted to

to control the following procedure:

a. Spraying the spray (2b) on the radiation

emitting semiconductor chip (4) by means of the spray device (2),

b. Measurement of the color location of the mixed light by means of

Measuring device (3),

c. Determining a difference between the measured color location and a predetermined destination color location,

d. Further spraying of spray (2b) by means of

Sprayer (2b) when the measured color location deviates from the target color location.

15. The apparatus of claim 14, wherein

the spray device (2) has a spray head (2a), by means of which several radiation emitting

Be sprayed semiconductor chips (4).

16. radiation-emitting semiconductor device (11) with

- A radiation-emitting semiconductor chip (4) having an upper side (6) and at least one side surface (7) through which at least a portion of the generated during operation

Primary radiation (9a) leaves the semiconductor chip (4),

a conversion element (8) which is in direct contact with at least parts of the upper side (6) and / or the at least one side surface (7) and is intended to cover at least part of the emitted primary radiation (9a)

Secondary radiation (9b) to convert, where

the conversion element (8) is sprayed onto the upper side (6) and / or the at least one side surface (7).

17. A radiation-emitting semiconductor component (11) according to claim 16, wherein the conversion element (8) is formed from a plurality of layers of a spray.

18. A radiation-emitting semiconductor component (11) according to claim 17, wherein the conversion element (8) comprises three to ten layers.

19. A radiation-emitting semiconductor component (11) according to claim 18, wherein the layer thickness of a layer is between 3 μιη and 15 μιη.