DE102017117411B4 - Leadframe composite and manufacturing process for optoelectronic semiconductor components - Google Patents

Abstract

Leadframe assembly (2) for optoelectronic semiconductor components (1) with - at least one component field (21) with a plurality of leadframes (22) for equipping with optoelectronic semiconductor chips (3), and - at least one edge region (25) which is attached to the component field (21 ) adjoins or surrounds it, wherein - in the component field (21) the lead frames (22) are arranged in a matrix-like, densely packed matrix, - there is at least one test field (26) in the edge region (25), - the test field (26) has a lead frame (22) ), which is located along a transverse axis (A) between an induction opening (28) and a blocking opening (29), - the induction opening (28) for inductively energizing the lead frame (22) of the test field (26) and the blocking opening (29) is set up to bundle current on this leadframe (22), and- the leadframe (22) of the test field (26) to adjacent leadframes (22) is at least a factor of 5 greater than an average distance between benac Hbaren lead frame (22) within the component field (21).

Description

A lead frame assembly is specified. In addition, a manufacturing method for optoelectronic semiconductor components is specified.

The pamphlet US 2016/0003890 A1 relates to a method and a component for measuring and optimizing optoelectronic semiconductor components.

The pamphlets DE 10 2015 101 671 A1 and US 2016/0 003 890 A1 each relate to a method for checking at least one optoelectronic component arranged on a connection carrier.

The pamphlet US 2015/0 097 200 A1 relates to a lighting device with a plurality of emitters which are arranged in such a way that the total emission has a high scotopic / photopic ratio.

One problem to be solved is to provide a leadframe assembly with which optoelectronic semiconductor components can be efficiently produced with precise color location emission.

This object is achieved, inter alia, by a lead frame assembly and by a manufacturing method with the features of the independent patent claims. Preferred developments are the subject of the dependent claims.

The lead frame assembly is set up for optoelectronic semiconductor components. The semiconductor components are in particular light-emitting diodes, or LEDs for short. Alternatively, the semiconductor components can be designed as semiconductor laser diodes. The semiconductor components include one or more optoelectronic semiconductor chips for generating radiation, in particular laser diode chips or light-emitting diode chips, LED chips for short.

The lead frame assembly contains one or more component fields. The at least one component field comprises a multiplicity of lead frames. The lead frames are set up for equipping with the optoelectronic semiconductor chips. For example, each lead frame is equipped with exactly one semiconductor chip.

The lead frames preferably have several lead frame parts, for example a first and a second lead frame part. It is possible that the semiconductor chip is applied to the first leadframe part and is electrically connected to the second leadframe part with a bonding wire. Alternatively, three leadframe parts can be present, the semiconductor chip or the semiconductor chips preferably being applied to one of the leadframe parts and being electrically connected to the other two leadframe parts via bonding wires.

The lead frame assembly includes at least one edge area. The edge area runs around the component field partially or, preferably, completely. This means that the edge area can also only border on the component field, for example only on one, on two or on three sides. If several component fields are present, then preferably all component fields are contiguously enclosed by the edge area and / or the component fields border on an in particular common edge area. When viewed from above, the edge region is, for example, frame-shaped, in particular rectangular, or eight-shaped.

The lead frames in the component field are arranged in the form of a matrix, for example in a rectangular matrix or a hexagonal matrix. The individual lead frames are preferably arranged densely in the component field. This means, for example, that the lead frames for the individual semiconductor components are arranged closely and directly adjacent to one another in the component field, so that there is preferably only one separation area, for example a sawing area, between adjacent areas for the finished semiconductor components.

There is at least one test field in the edge area. There are preferably several test fields.

The test field comprises a lead frame; each test field preferably comprises exactly one lead frame. The lead frame of the test field is located along a transverse axis, which is in particular oriented perpendicular to a longitudinal axis, between an induction opening and a blocking opening. The lead frame and its lead frame parts can directly adjoin the induction opening and / or the blocking opening. The induction opening and the blocking opening preferably penetrate the leadframe assembly completely, in a direction perpendicular to the main sides of the leadframe assembly.

The lead frames of the test field and the component field are preferably constructed identically, the lead frame parts can be designed identically. For example, the lead frames of the test field and the component field differ only in terms of their connecting struts between the lead frame parts. Alternatively, the lead frames of the test field and the component field are designed differently.

The induction opening is set up for the inductive energization of the lead frame of the test field. That is, when a semiconductor chip is properly attached to the leadframe and electrically contacted, an electromagnetic alternating field is passed through the induction opening, which generates an induction current around the induction opening, which then flows through the semiconductor chip on the leadframe of the test field.

The blocking opening is set up to concentrate the current on the lead frame of the test field. This means that a leakage current that does not flow via the semiconductor chip on the lead frame of the test field is reduced or prevented through the blocking opening. The semiconductor chip of the test field can thus be supplied with current more efficiently.

The leadframe assembly is provided for optoelectronic semiconductor components and comprises at least one component field with a multiplicity of leadframes for equipping with optoelectronic semiconductor chips. At least one edge area runs around the component field. In the component field, the lead frames are arranged densely in the form of a matrix. There is at least one test field in the edge area. The test field comprises a lead frame which is located along a transverse axis between an induction opening and a blocking opening. The induction opening is set up for inductive energization of the leadframe of the test field and the blocking opening is set up to concentrate the current on this leadframe. The leadframe of the test field has a distance from adjacent leadframes that is a factor of 5 greater than an average distance between adjacent leadframes within the component field.

In addition, a manufacturing method for optoelectronic semiconductor components is specified. A leadframe assembly is used in the production method, as described in connection with one or more of the above-mentioned embodiments. Features of the lead frame assembly are therefore also disclosed for the manufacturing process and vice versa.

1. A) Bereitstellen des Leiterrahmenverbunds,
2. B) Bestücken der Leiterrahmen des Leiterrahmenverbunds mit den optoelektronischen Halbleiterchips,
3. C) Erzeugen eines Funktionskörpers auf den Leiterrahmen und/oder auf den Halbleiterchips,
4. D) Anbringen einer Erregerspule an der Induktionsöffnung und Bestromen des Halbleiterchips in dem Testfeld mittels Induktion, und
5. E) Vereinzeln des Leiterrahmenverbunds und optional des Funktionskörpers zu den Halbleiterbauteilen, wobei jedes der Halbleiterbauteile bevorzugt genau einen der Leiterrahmen aus dem Bauteilefeld umfasst und wobei der Randbereich verworfen wird.

The manufacturing process comprises the following steps, preferably in the order given:

1. A) Provision of the lead frame assembly,
2. B) Equipping the leadframes of the leadframe assembly with the optoelectronic semiconductor chips,
3. C) generating a functional body on the leadframe and / or on the semiconductor chips,
4. D) attaching an excitation coil to the induction opening and energizing the semiconductor chip in the test field by means of induction, and
5. E) Separating the leadframe assembly and optionally the functional body to form the semiconductor components, wherein each of the semiconductor components preferably includes exactly one of the leadframes from the component field and wherein the edge region is discarded.

Leadframe-based, color-converted light-emitting diode products are still usually short-circuited individually in the leadframe assembly. This means that a color location emitted by the individual semiconductor components cannot be checked during manufacture by means of electrical contacting. Such a color location control is, however, important in order to control and / or readjust process fluctuations that can occur when a phosphor is applied, for example during spray coating, or when creating volume potting. An alternative to direct electrical contacting is to inductively energize the semiconductor components with high-frequency excitation so that the semiconductor chips temporarily emit light.

Conventional leadframe assemblies for semiconductor components, in particular QFN-based components, are not suitable for inductively exciting one or more semiconductor chips due to the component size and the structure of the leadframe. In particular, metal-free areas, i.e. openings, are very small, so that such openings can only serve as a receiver coil to a very limited extent and so that no or only insufficient currents can be induced by means of an external primary coil. Furthermore, due to the leadframe structure, there are often several leakage current paths, which in turn prevent targeted excitation of the semiconductor chips. This means that no efficient color control and color measurement is possible with such components during manufacture.

On the other hand, protective diodes are often used in semiconductor components to protect against damage caused by electrostatic discharges, so-called ESD protective diodes, in particular Zener diodes. If there are leadframe assemblies with several light-emitting diode chips connected in series, in particular LED chips based on InGaN and emitting blue, then a bond wire can melt on the ESD protective diodes during testing by means of inductive current coupling. If the components in the leadframe assembly are also connected in parallel, the bonding wires of the ESD protective diode can also melt in neighboring components that are close to the component to be tested. This can result in a high proportion of rejects or rejects. This can be avoided with the procedure described here.

In the leadframe assembly described here, several test fields are preferably implemented, which can be operated inductively via a high frequency, in particular due to the blocking opening and due to their location relatively far away from the component field, whereby a color measurement can be carried out during manufacture, without adjacent lead frames in the component field to affect. No change to the design of the lead frame assembly in the component field is necessary. The number of semiconductor components per leadframe assembly and thus the yield remain the same, since the test fields are located in the edge area.

The overall mechanical stability of the leadframe assembly also remains unchanged, since the test fields, in particular, do not or not significantly impair the mechanical properties of the leadframe assembly. Furthermore, potential damage to the ESD protective diode and the associated bond wire can be avoided. Thus, the test fields allow a fast and efficient color location measurement and thus a color location correction, whereby an overall yield can be improved, along with a cost reduction through reduced effort.

According to at least one embodiment, the functional body is produced by means of spraying, printing and / or compression molding or casting. Combined methods can be used to generate the functional body. For example, in a first step, the functional body is continuously cast and, in a second step, a smaller amount of a material for the functional body in particular is subsequently sprayed on.

In accordance with at least one embodiment, the functional body comprises one or more phosphors. The at least one phosphor can be present in the functional body in a homogeneously distributed manner. Alternatively, the at least one phosphor is distributed inhomogeneously, for example by sedimentation. When the functional body is produced, the phosphor is preferably mixed homogeneously in a matrix material of the functional body. The matrix material is, for example, a silicone, an epoxy or a silicone-epoxy hybrid material. The functional body is thus in particular a conversion body.

In accordance with at least one embodiment, the luminescent substance (s) is or are set up to partially or completely convert a primary radiation emitted by the semiconductor components during operation into a longer-wave secondary radiation. The semiconductor chips preferably emit blue light, which is only partially converted into yellow, green and / or red light. In this way, mixed-colored white light in particular can be generated from the finished semiconductor components during operation.

According to at least one embodiment, the method comprises a step F). Step F) is preferred between steps D. ) and E). In step F), a quantity of the at least one applied phosphor is determined on the basis of the determination of the color location in step D. ) corrected. A deviation of the color locus emitted by the finished semiconductor components from a target value can thus be reduced.

In other words, in step D. ) the semiconductor chip is excited to generate light, as a result of which a mixed radiation is preferably emitted which is composed of light directly from the semiconductor chip and light from at least one phosphor. The color location of this mixed radiation is determined by the inductive operation of the semiconductor chip in step D. ) certainly. The color location can be brought closer to the target value by the subsequent quantity correction of the phosphor.

According to at least one embodiment, the amount of the phosphor is increased in step F). In particular, additional phosphor is applied, for example, by spraying or printing. The additional luminescent material can be part of the functional body, so that the functional body is enlarged, in particular thickened, in step F).

According to at least one embodiment, step F) is followed by step D1). Step D1) is preferably carried out before step E). In step D1), the semiconductor chip in the test field is energized and the determination of the color location of the mixed radiation is preferably repeated. In other words, step D1) is a repetition of the step D. ).

According to at least one embodiment, the blocking opening has a larger circumference than the induction opening. In particular, the circumference of the blocking opening exceeds the circumference of the induction opening by at least a factor of 1.2 or 1.5 or 2 or 3 or 5. Alternatively or additionally, the circumference of the blocking opening is at most a factor of 20 or 10 or 5 larger than the circumference of the Induction opening.

According to at least one embodiment, the blocking opening along the transverse axis is at least a factor of 1.5 or 2 or 3 or 4 larger than the induction opening. Alternatively or additionally, this factor is a maximum of 20 or 10.

According to at least one embodiment, the blocking opening and the induction opening have the same widths in the direction perpendicular to the transverse axis, in particular in the direction parallel to a longitudinal axis. This applies in particular with a tolerance of a maximum of a factor of 1.25 or 1.1 or 1.05. Alternatively, it is possible for the blocking opening and the induction opening to have different widths. In particular, the blocking opening then has a greater width than the induction opening, for example a width which is at least a factor of 1.5 or 2 greater. Furthermore, it is alternatively possible that the induction opening is narrower than the blocking opening.

According to at least one embodiment, the blocking opening and / or the induction opening are square or rectangular in shape when viewed from above. Due to the manufacturing process, corners of the square or the rectangle can be rounded. It is also possible for the blocking opening and / or the induction opening to have more complicated shapes, for example a triangular shape, a T-shape, an L-shape or an H-shape, when viewed from above.

According to at least one embodiment, the induction opening has a size of at least 0.5 mm × 0.5 mm or 1 mm × 1 mm, as seen in plan view. Alternatively or additionally, the size of the induction opening is at most 6 mm x 6 mm or 4 mm x 4 mm or 3 mm x 3 mm.

In accordance with at least one embodiment, the leadframe assembly is made from a copper alloy. That is, a main component of the lead frame assembly is formed by copper. The leadframe assembly optionally has coatings, for example in order to improve optical properties or solderability. For example, the leadframe assembly is made from a copper-iron-phosphorus alloy, such as Wieland-K65, or from a copper-chromium-silicon-titanium alloy, such as Wieland-K75.

According to at least one embodiment, the lead frame assembly has a thickness or average thickness of at least 0.1 mm or 0.2 mm or 0.3 mm. Alternatively or additionally, the thickness or average thickness is at most 1.5 mm or 1 mm or 0.5 mm.

In accordance with at least one embodiment, the finished semiconductor components have dimensions of at least 1 mm × 1 mm or 1.5 mm × 1.5 mm when viewed from above. Alternatively or additionally, these dimensions are at most 8 mm x 8 mm or 6 mm x 6 mm or 4 mm x 4 mm.

According to at least one embodiment, the lead frames are additionally equipped with protective diodes in step B) to protect against damage caused by electrostatic charges. The ESD protective diodes are preferably applied to the leadframe in the component area as well as in the test field. Alternatively, it is possible that the protective diodes are only applied in the component field and not in the test field.

According to at least one embodiment, the current is supplied in step D. ) by means of a high frequency. A frequency of the alternating electric field is preferably at least 5 MHz or 10 MHz or 20 MHz and / or at most 0.5 GHz or 0.25 GHz or 0.1 GHz. The inductive energization is carried out in particular, as in the publication US 2016/0003890 A1 described there, see in particular paragraphs 15, 18, 21, 23, 24, 51 and 52. The disclosure content of this publication, in particular the paragraphs cited, is incorporated by reference.

According to at least one embodiment, the current is supplied in step D. ) over a period of at least 2 ms or 10 ms. Alternatively or additionally, the energization is operated over a period of at most 100 ms or 50 ms. An efficient evaluation of the color locus of the emitted mixed radiation is possible through such a period of time. The response times that the semiconductor chip needs to emit radiation are, for example, of the order of 10 ns. Response times of phosphors are, for example, between a few ns, for example for quantum dots or YAG: Ce, to ms, for example for KSF. It can therefore be the case, depending on the phosphor combination used, that the time span of the energization is of the same order of magnitude as the response time of the phosphor. However, the period of energization is preferably significantly longer than the response time of the semiconductor chip.

According to at least one embodiment, the function carrier mechanically connects all lead frame parts within the lead frames to one another after step C). That is to say, the functional body can be the mechanically stabilizing and / or cohesive component in the finished semiconductor components. In this case, there is preferably no further stabilizing body such as a potting body. It is also possible for the functional body to extend continuously over the entire leadframe assembly or at least over the component area and the test field, in particular in a constant thickness that does not vary within the scope of the manufacturing tolerances.

According to at least one embodiment, the method comprises a step G). Step G) is preferred between steps A. ) and B) carried out. In step G) a potting body is used generated, which is different from the functional body. The potting body is preferably made of a plastic such as an epoxy. Furthermore, the potting body is preferably impermeable to the radiation generated during operation of the finished semiconductor components. For example, the potting body is white or black.

According to at least one embodiment, all lead frame parts within the lead frames are mechanically connected to one another by the potting body. That is to say, the potting body can be the component of the finished semiconductor components that mechanically supports and stabilizes them.

According to at least one embodiment, the functional body is attached directly to and / or in the potting body in step C). For example, the functional body is limited to recesses in the potting body. The semiconductor chips are preferably located within these recesses.

According to at least one embodiment, the step D. ) at least in the direction perpendicular to the main sides of the leadframe assembly on the leadframes in the component field and in the test field the same optical properties. That is, with regard to the radiation characteristics, the areas for the semiconductor components in the component field and in the test field do not differ from one another or do not differ significantly from one another. Thus, by measuring the color location in the at least one test field, conclusions can be drawn about the color location of the semiconductor components that have not been tested in the component field.

A leadframe assembly described here and a manufacturing method described here are explained in more detail below with reference to the drawing on the basis of exemplary embodiments. The same reference symbols indicate the same elements in the individual figures. However, no references to scale are shown here; rather, individual elements can be shown exaggerated for a better understanding.

• 1 schematische Draufsichten auf Ausführungsbeispiele von hier beschriebenen Leiterrahmenverbünden,
• 2 schematische Darstellungen von beispielhaften Verfahrensschritten einer Abwandlung eines Verfahrens zum Herstellen von optoelektronischen Halbleiterbauteilen, und
• 3 bis 4 schematische Schnittdarstellungen, Draufsichten und perspektivische Darstellungen von Verfahrensschritten eines hier beschriebenen Verfahrens zum Herstellen von optoelektronischen Halbleiterbauteilen.

Show it:

• 1 schematic top views of exemplary embodiments of leadframe assemblies described here,
• 2 schematic representations of exemplary method steps of a modification of a method for producing optoelectronic semiconductor components, and
• 3 until 4th schematic sectional representations, top views and perspective representations of method steps of a method described here for producing optoelectronic semiconductor components.

In 1A Figure 3 is a top view of an embodiment of a leadframe assembly 2 shown. The lead frame assembly 2 is formed continuously from a stamped or lasered semi-finished product, in particular a copper sheet or a copper foil. The lead frame assembly 2 includes two component fields 21 . In the component fields 21 there are many lead frames arranged in a matrix-like manner 22nd .

The two component fields 21 are eighth-shaped from a continuous edge area when viewed from above 25th surround. It is possible that the edge area 25th has the same width all around, seen in plan view. In the edge area 25th are located between the two component fields 21 several test fields 26th , which also have a ladder frame each 22nd exhibit. The test fields 26th follow along a transverse axis A. on each other. The component fields 21 are along a longitudinal axis L. arranged one after the other. Deviating from the representation in 1A it is also possible that the edge area 25th the component fields 21 only partially surrounds it or in an area between the two component fields 21 is limited.

A mean distance between adjacent test fields 26th as well as a distance between the test fields 26th to the ladder frame 22nd within the component fields 21 is significantly larger than a distance between adjacent lead frames 22nd within the component fields 21 itself. In addition, take the test fields 26th overall only a comparatively small area of the edge area 25th a. Thus is the edge area 25th especially mechanically through the test fields 26th not or not significantly influenced, in particular with regard to mechanical stability.

Deviating from the representation in 1A can also only have one component field 21 or more than two component fields can be used 21 to be available. Furthermore, it is not absolutely necessary that the test fields 26th between the component fields 21 are located. The test fields 26th can also be placed on an outer edge around the component fields 21 be placed together, including along the longitudinal axis L. consecutively. The same applies to all other examples and exemplary embodiments.

The component fields 21 have dimensions of 55 mm x 55 mm, for example. An expansion of the lead frame assembly 2 along the longitudinal axis L. is for example 125 mm. Along the transverse axis A. knows the Leadframe composite 2 for example an extension of 70 mm. There is thus a width of the edge area 25th along the longitudinal axis L. at 7.5 mm, along the transverse axis A. at 5 mm. The stated values preferably also apply to all other examples and exemplary embodiments, in particular in each case with a tolerance of at most one factor 2 , based on all values mentioned together or based on individual values.

In 1B is the lead frame composite 2 in the area of the component field 21 shown in more detail. The individual ladder frames 22nd each have a first lead frame part 41 and a second lead frame part 42 on. The first ladder frame part 41 is bigger. The ladder frame parts 41 , 42 are inside a ladder frame 22nd through a breakthrough 45 electrically separated from each other. Between adjacent lead frames 22nd can use diagonal connecting struts 44 lie through which the lead frame assembly 2 can be mechanically stabilized. With these optional diagonal connecting struts 44 are the ladder frames 22nd and thus the areas for the later semiconductor components 1 within the component field 21 electrically short-circuited and thus electrically not individually testable.

In 1C is the edge area 25th between the component fields 21 exemplary with two of the test fields 26th shown. The test fields 26th each include a lead frame 22nd with the two ladder frame parts 41 , 42 . In addition, there are connecting struts 44 present with which the ladder frame parts 41 , 42 with remaining areas of the edge area 25th are connected. Along the transverse axis A. are the lead frames 22nd each between an induction opening 28 and a locking opening 29 . The ladder frame parts 41 , 42 are in the test field 26th designed in the same way as in the component field 21 .

A width of the openings 28 , 29 along the longitudinal axis L. is for example about 2 mm. A total length of the test field 26th is, for example, 10 mm. Here is the induction opening 28 square or approximately square shaped and the locking opening 29 as an elongated rectangle. The induction opening 28 has, for example, dimensions of 2 mm x 2 mm, whereas the dimensions of the locking opening 29 for example 2 mm x 5 mm.

To illustrate how the test fields work 26th are on the first ladder frame parts 41 each optoelectronic semiconductor chips 3 , in particular LED chips, mounted. Via a bond wire 6th there is an electrical connection to the second lead frame parts 42 . This is within the test fields 26th the only electrical direct connection between the lead frame parts 41 , 42 over the bond wire 6th given. That is, along the longitudinal axis L. there is no direct connection between the lead frame parts 41 , 42 inside the lead frame 22nd before.

The induction opening 28 is intended to have an excitation coil 8th is placed below and / or above, see also the 1D and 1E . The area around the induction opening acts via an electromagnetic alternating field 28 around as a secondary coil, so that a current in the lead frame assembly 2 is induced. Through the lock opening 29 it is achieved that the current flow to a large extent via the semiconductor chip 3 and the bond wire 6th takes place and not over remaining areas of the lead frame assembly 2 . This is the purpose of the locking opening 29 to a bundling of the induction current on the semiconductor chip 3 . The most relevant paths of the induction currents I1, I2 are in 1C illustrated, whereby there are usually significantly more possible, in particular less relevant, current paths. Depending on the frequency of the excitation, additional current paths may have to be taken into account. The induction current I1 is, for example, by at least one factor 2 greater than the induction current 12. The induction current I2 is a leakage current.

Unlike the ladder frames 22nd in the component field 21 it is in the test fields 26th possible the semiconductor chips 3 to stimulate inductively in a targeted manner. Within the component field 21 this is due to the dense arrangement of the lead frames 22nd as well as the diagonal connecting struts required for mechanical stabilization 44 , please refer 1B , not possible or only possible to a very limited extent. In particular, the breakthroughs 45 in 1B in the component field 21 too small to efficiently induce an induction current across the semiconductor chip 3 and the bond wire 6th to create.

A distance D. between neighboring test fields 26th along the transverse axis A. can remain comparatively small. For example, the distance is D. at least 0.2 mm or 0.5 mm or 1 mm and / or at most 20 mm or 50 mm.

In the embodiment of the test field 26th , as in 1C illustrated, point the lead frame 22nd as well as the induction openings 28 and the blocking openings 29 along the longitudinal axis L. approximately the same widths. Opposite is the locking opening 29 in 1D along the longitudinal axis L. widened to reduce the induction current I2. In the embodiment of 1E is also the induction opening 28 along the longitudinal axis L. opposite the lead frame 22nd of the test field 26th widened.

Corresponding variations in the shapes of the induction openings 28 and the blocking openings 29 can also be present in all other examples and working examples.

In 2 is a production method according to an exemplary modification with such a leadframe assembly 1 illustrated. According to the sectional view in 2A becomes the lead frame assembly 2 provided and with the semiconductor chips 3 equipped. An electrical connection is made via the bond wires 6th . Notwithstanding, it is possible, as in all examples and exemplary embodiments, that the individual lead frames 22nd are composed of more than two parts and the semiconductor chips 3 are electrically contacted, for example, each via two bonding wires. A space between the lead frames 22nd within the component fields 21 is preferably smaller than a spacing of the lead frame 22nd of the test field 26th towards the component fields 21 .

In the sectional view of the 2 B it is shown that a first region 4a of a functional body 4th is produced. The functional body 4th comprises at least one phosphor 43 . The first area 4a is produced, for example, by casting. The semiconductor chips 3 and the bond wires 6th are preferably completely embedded in the first region 4a.

In the top view of the 2C is illustrated that about the excitation coil 8th the induction current I1 through the semiconductor chip 3 and the bond wire 6th to be led. This will make the semiconductor chip 3 operated and together with the phosphor 43 , in 2C not drawn, a mixed radiation is generated. A color point of this mixed radiation is detected, evaluated and compared with a target value.

In the sectional view of the 2D is shown that based on the color location determination 2C another area 4b of the functional body 4th is applied. The thickness of the area 4b results from the measurement 2C . This allows the color location of the mixed radiation to be set precisely.

In the step of the 2C only the semiconductor chip is preferred 3 of the test field operated via induction 26th controlled. That leaves the semiconductor chips 3 the component fields 21 de-energized.

In the schematic top view in 2E is shown to have multiple test areas I. , II , III can be provided. For example, the test area is first I. after applying the functional body 4th energized and the corresponding test field 26th evaluated. The application of the functional body 4th on the test area I. be limited.

Based on the measurement in the test area I. a corrected application of the functional body then takes place 4th in the test area II as well as additionally in the test area I. . A measurement can then be made in the test area II to be checked, after which only the functional body 4th in the test area III is applied. This is the test area III prefers the largest of the three areas I. , II , III . Through this iterative measurement and iterative application of the functional body 4th is a uniform mixed radiation of the finished semiconductor components 1 over the entire lead frame assembly 2 generated away.

Finally, the semiconductor components are separated 1 , see the top view in 2F . The semiconductor components 1 for example, dimensions of 1.75 mm x 2.25 mm.

The semiconductor components preferably comprise 1 one ESD protection diode each 35 that has another bond wire 6th is electrically contacted. The ESD protection diode 35 is preferably also present in all examples and exemplary embodiments and is carried out with the method step as in 2A shown, applied. Such an ESD protection diode together with the associated bond wire can also be used in the test fields 26th to be available.

In 3 another manufacturing process is illustrated. According to the sectional view in 3A will be right around the semiconductor chips 3 around a potting body 5 generated in the direction away from the lead frame assembly 2 flush with the semiconductor chips 3 can complete. With the potting body 5 it is, for example, a white material, in particular a silicone with embedded scattering particles made of titanium dioxide, for example.

In the step of the 3B it is shown that the functional body 4th with the phosphor 43 continuously across all semiconductor chips 3 is generated away. A review of the by the functional body 4th The resulting color locus of a mixed radiation is preferably carried out analogously to the 2C until 2E .

In the perspective view of the 3C is the resulting, isolated semiconductor component 1 shown. The functional body 4th with the phosphor 43 is cuboid. On the side surfaces of the potting body 5 can the end faces of the connecting struts created by the separation 44 exposed. A top side of the semiconductor component 1 is completely through the functional body 4th with the at least one phosphor 43 educated.

In the manufacturing process, as in the sectional views of 4th illustrated, a QFN component is created. According to 4A becomes the lead frame assembly 2 in the potting body 5 embedded. The semiconductor chips are located here 3 with the bond wires 6th in recesses in the potting body 5 , which is formed for example by a white plastic.

In the step of the 4B the recesses with the functional body 4th with the phosphor 43 Mistake. This is where the functional body 4th as well as the potting body 5 in the component fields 21 designed in exactly the same way as in the test field 26th so that the component fields 21 and the test field 26th have the same optical properties. This also applies preferably to all other examples and exemplary embodiments.

The remaining procedural steps for the process of 4th , especially testing and correcting the amount of the functional body 4th and thus of the phosphor 43 and the separation, are preferably carried out analogously to 2 .

Unless otherwise indicated, the components shown in the figures preferably follow one another in the specified order. Layers that do not touch one another in the figures are preferably spaced apart from one another. As far as lines are drawn parallel to one another, the corresponding surfaces are preferably also aligned parallel to one another. Likewise, unless otherwise indicated, the relative positions of the components drawn are shown correctly in the figures.

List of reference symbols

1

optoelectronic semiconductor component

2

Leadframe composite

21

Component field

22nd

Ladder frame

25th

Edge area

26th

Test field

28

Induction opening

29

Locking opening

3

optoelectronic semiconductor chip

35

ESD protection diode

4th

Functional body

41

first lead frame part

42

second lead frame part

43

Fluorescent

44

Connecting strut

45

breakthrough

5

Potting body

6th

Bond wire

8th

Excitation coil

A.

Transverse axis

D.

Distance between neighboring test fields

I.

current

L.

Longitudinal axis

I, II, III

Test areas

Claims (13)

Leadframe assembly (2) for optoelectronic semiconductor components (1) with - At least one component field (21) with a plurality of lead frames (22) for equipping with optoelectronic semiconductor chips (3), and - At least one edge region (25) which adjoins the component field (21) or runs around it, wherein - In the component field (21), the lead frames (22) are arranged in a dense matrix-like manner, - there is at least one test field (26) in the edge area (25), - The test field (26) comprises a lead frame (22) which is located along a transverse axis (A) between an induction opening (28) and a blocking opening (29), - The induction opening (28) is set up for inductive energization of the leadframe (22) of the test field (26) and the blocking opening (29) is set up to concentrate current on this leadframe (22), and - The leadframe (22) of the test field (26) to adjacent leadframes (22) is at least a factor of 5 greater than an average distance between adjacent leadframes (22) within the component field (21). Manufacturing process for optoelectronic semiconductor components (1) with the steps: A) providing a lead frame assembly (2) according to the preceding claim, B) equipping the lead frames (22) with the optoelectronic semiconductor chips (3), C) generating a functional body (4) on the leadframe (22) and / or on the semiconductor chips (3), D) attaching an excitation coil (8) to the induction opening (28) and energizing the semiconductor chip (3) in the test field (26) by means of induction, and E) Separation to form the semiconductor components (1), wherein each of the semiconductor components (1) includes exactly one of the lead frames (22) from the component field (21) and the edge region (25) is discarded. Method according to the preceding claim, in which the functional body (4) comprises at least one phosphor (43) which is set up to emit one of the semiconductor chips (3) during operation To convert primary radiation partly into a longer-wave secondary radiation. Method according to the preceding claim, in which in step D) a color locus of a mixed radiation emitted by the semiconductor chip (3) of the test field (28) together with the associated phosphor is determined and a comparison is made with a target value. Method according to the preceding claim, wherein between steps D) and E) in a step F) an amount of the at least one applied phosphor (43) is corrected based on the determination of the color location in step D), so that a deviation from the target value is reduced. Method according to the preceding claim, in which after step F) and before step E) in a step D1) the energization of the semiconductor chip (3) in the test field (26) and the determination of the color locus of the mixed radiation are repeated. Method according to one of the Claims 2 until 6th , in which a circumference of the blocking opening (29) is at least a factor of 1.5 larger than a circumference of the induction opening (28). Method according to one of the Claims 2 until 7th , in which an extension of the blocking opening (29) along the transverse axis (A) is at least a factor of 3 greater than an extension of the induction opening (28) along the transverse axis (A), the blocking opening (29) and the induction opening (28 ) have the same widths in the direction perpendicular to the transverse axis (A) and are square or rectangular in shape when viewed from above. Method according to one of the Claims 2 until 8th , in which the induction opening (28) in plan view has a size between 0.5 mm x 0.5 mm and 4 mm x 4 mm inclusive, the leadframe assembly (2) being made of a copper alloy and a thickness between 0.2 mm inclusive and 1 mm. Method according to one of the Claims 2 until 9 , in which the lead frames in step B) are additionally equipped with protective diodes (35) to protect against damage from electrostatic charges, the energizing in step D) takes place by means of a high frequency between 5 MHz and 250 MHz over a period of at least 2 ms . Method according to one of the Claims 2 until 10 , in which the functional body (4) after step C) mechanically connects all lead frame parts (41, 42) within the lead frames (22) so that the functional body (4) represents the component that mechanically holds the finished semiconductor components (1) together and no other component Stabilization body between the lead frame parts (41, 42) is present. Method according to one of the Claims 2 until 10 , in which in a step G) between steps A) and B) a potting body (5) is produced which mechanically connects all lead frame parts (41, 42) within the lead frames (22), wherein in step C) the functional body ( 4) is attached directly to and / or in the potting body (5). Method according to one of the Claims 2 until 12th , in which in step D) the same optical properties are present at least in the direction perpendicular to the leadframe assembly (2) on the leadframe (22) both in the component field (21) and in the test field (26).

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