WO2014086110A1 - 微波能量转换装置 - Google Patents

微波能量转换装置 Download PDF

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Publication number
WO2014086110A1
WO2014086110A1 PCT/CN2013/071366 CN2013071366W WO2014086110A1 WO 2014086110 A1 WO2014086110 A1 WO 2014086110A1 CN 2013071366 W CN2013071366 W CN 2013071366W WO 2014086110 A1 WO2014086110 A1 WO 2014086110A1
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Prior art keywords
microwave
semiconductor
energy conversion
semiconductor block
microwave energy
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English (en)
French (fr)
Inventor
黄卡玛
杨阳
陈倩
刘长军
陈星�
郭庆功
闫丽萍
赵翔
杨晓庆
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Sichuan University
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Sichuan University
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Priority to US14/672,218 priority Critical patent/US20150207364A1/en
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
    • H02J50/20—Circuit arrangements or systems for wireless supply or distribution of electric power using microwaves or radio frequency waves
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
    • H02J50/40—Circuit arrangements or systems for wireless supply or distribution of electric power using two or more transmitting or receiving devices

Definitions

  • the present invention relates to microwave transmission energy technology, and more particularly to microwave reception and rectification techniques.
  • Microwave transmission energy can be used not only for space solar power plants to deliver electrical energy to the ground, but also for ground-based spacecraft.
  • the technology can also transmit electricity in areas where wiring is difficult, and the prospects are very broad.
  • Microwave transmission energy usually needs to convert microwave energy into electrical energy.
  • the microwave rectifier that converts microwave energy into electrical energy is one of the core devices of the microwave transmission energy system.
  • Brown proposed the concept of microwave energy transmission and rectenna, and in 1963 successfully developed the first rectenna.
  • the most commonly used microwave rectification technique at this stage is microwave diode rectification.
  • microwave diode rectification has problems of small power capacity, easy breakdown of the microwave diode, and generation of higher harmonics, which affect system performance.
  • the existing diode rectifying antenna appears to be integrated, it can receive both microwave and rectification, but in essence, the microwave receiving antenna and the microwave rectifying circuit are independent of two parts, and in order to match the rectifying circuit and the antenna As well as suppressing the higher harmonics generated by the diodes, the design of the rectifier circuit is often very complicated, which greatly increases the design difficulty and is difficult to control in weight and volume.
  • the technical problem to be solved by the present invention is to provide a microwave receiving and microwave rectifying device for converting the microwave energy into a current output, in view of the disadvantages of the prior art microwave rectifying device having a complicated structure and high design difficulty.
  • the microwave energy conversion device includes a microwave receiving unit and a microwave rectifying unit, wherein the microwave receiving unit and the microwave rectifying unit are composed of a semiconductor block, and the semiconductor block An ohmic contact electrode is disposed on the output for outputting a direct current generated by the semiconductor block, and the ohmic contact electrode is disposed at both ends of the semiconductor block in the microwave transmission direction.
  • the present invention first proposes a method of rectifying microwaves by using a semiconductor body effect.
  • a semiconductor body effect microwave rectification method This method is different from the traditional diode junction effect rectification principle.
  • the principle of microwave Hall effect is used to generate rectification effect on the semiconductor, so no complicated antenna and circuit design is needed, and microwave reception and rectification are simultaneously performed on the semiconductor block.
  • the microwave effect on the semiconductor can still produce the Hall effect without using an external magnetic field, so that the DC voltage is generated in the semiconductor direction along the Poynting vector direction (microwave transmission direction).
  • the method utilizes the electric field component of the plane wave to induce a current in the same direction as the electric field on the unipolar (hole or electron type) semiconductor, and the carriers forming the current are subjected to the Poynting in the action of the magnetic field component.
  • the receiving microwave and the rectification of the present invention are simultaneously completed by the semiconductor, so that the antenna and the circuit are not required to be formed like the conventional rectifying antenna, which greatly simplifies the design, and the volume and weight are also more easily controlled, and the cost is also Reduce accordingly.
  • the ohmic contact electrode is a metal electrode.
  • the metal electrode is formed by a sputtering process or a coating process.
  • the function of the ohmic contact electrode of the semiconductor block is to facilitate the output of the direct current generated by the semiconductor block through the wire connection.
  • the ohmic contact electrode can usually be formed of a metal material by a sputtering process or a coating process to form an ohmic contact electrode at both ends of the semiconductor block along the Poynting direction.
  • the semiconductor block is an intrinsic semiconductor block.
  • the semiconductor block is a doped semiconductor block.
  • the semiconductor block can be an intrinsic semiconductor block or a doped semiconductor block.
  • a certain impurity concentration can improve the rectification efficiency of the semiconductor block. As the impurity concentration increases, the properties of the semiconductor also change, that is, the metal characteristics are more favored, so the rectification efficiency of the highly doped semiconductor is rather reduced.
  • N is a positive integer, N 2 .
  • the Hall voltage generated by a single semiconductor block under microwaves is very low and the current is very small, it is usually possible to connect a plurality of semiconductor blocks in series to increase the output voltage; or to connect a plurality of semiconductor blocks in parallel to increase the output current.
  • the circuit parameters, the generated voltage and the current are substantially equal, and various connection and subsequent processing are facilitated, such as performing inverter interconnection and the like.
  • the N semiconductor blocks are arranged on the same plane.
  • the plane is perpendicular to the direction of microwave transmission.
  • Arranging N semiconductor blocks on the same plane (or substrate) and making the plane perpendicular to the microwave transmission direction can improve microwave energy conversion efficiency and maximize microwave energy reception.
  • the N semiconductor blocks can also be arranged on the surface of the non-planar object, such as on the surface of an aircraft or the like, for receiving the energy transmitted by the transmitting station through the microwave.
  • the N semiconductor blocks are arranged on average in M planes, and M is a positive integer, M 2 .
  • N semiconductor blocks can be evenly arranged on M planes. Since each semiconductor block has the same structure, the number of semiconductor blocks arranged on each plane is the same, if the semiconductor blocks on each plane are the same
  • the connection method is such that the circuit structure of each plane is basically the same, the output voltage and current are basically the same, each plane can be used as a unit, and then connected in series, parallel, etc., to meet different output voltages or Current requirements.
  • the M planes are arranged side by side or in parallel.
  • the M planes are arranged side by side so that they are perpendicular to the direction of microwave transmission, and each plane does not affect each other, which is beneficial to improve the conversion efficiency.
  • This configuration is suitable for energy conversion from a location far from the microwave source.
  • the invention has the beneficial effects of providing a novel microwave energy conversion device with a novel structure, which combines microwave reception and microwave rectification into one, which greatly simplifies the circuit design. Due to the flexible layout of the semiconductor blocks and the variety of connections, different output voltages and output currents can be met.
  • the invention has the characteristics of simple structure, easy arrangement, relatively wide rectification bandwidth and the like.
  • the present invention does not rely on PN junction rectification, so there is no problem of breakdown when subjected to large microwave power, and the reliability of the device is greatly improved.
  • FIG. 1 is a schematic diagram of generating a Hall voltage in a semiconductor block
  • FIG. 2 is a schematic diagram of a semiconductor block parallel output structure
  • FIG. 3 is a schematic diagram of a serial output structure of a semiconductor block
  • FIG. 5 is a schematic structural view of a semiconductor block, FIG. 5a is a perspective view, and FIG. 5b is a cross-sectional view taken along line A-A of FIG. 5a;
  • FIG. 6 is a schematic view showing that N semiconductor blocks are arranged on four planes in an average manner, and four planes are arranged side by side;
  • Fig. 7 is a schematic diagram in which N semiconductor blocks are arranged on average in four planes, and four planes are arranged in an overlapping manner.
  • the microwave directly radiates the semiconductor block, and according to the Hall effect, a DC voltage is generated in the semiconductor block along the Poynting vector direction (i.e., the microwave transmission direction).
  • the microwave receiving unit and the microwave rectifying unit are combined into one, and the semiconductor block 10 is used to constitute a microwave receiving unit and a microwave rectifying unit.
  • the semiconductor radiates the semiconductor block 10
  • the semiconductor block 10 is transported along the microwave.
  • the O terminal and the P terminal of the direction will generate a Hall voltage Uh, and the ohmic contact electrode 11 is provided at both ends of the semiconductor block, so that the current generated by the semiconductor block can be output, as shown in FIG.
  • Fig. 1 it is the Poynting vector, which represents the propagation direction of the microwave, the electric field component, ⁇ is the magnetic field component, and Uh is the Hall voltage generated by the semiconductor block, that is, the microwave rectification voltage here.
  • the invention utilizes the electric field component of the plane wave to induce a current on the unipolar semiconductor, and the carrier forming the current is subjected to the Lorentz force in the direction of the Poynting vector under the action of the magnetic field component of the plane wave, thereby being in the semiconductor A Hall voltage is generated along the Poynting vector direction.
  • the electric field and the magnetic field are reversed at the same time, the direction of the Lorentz force does not change, so the direction of the Hall voltage does not change, so that a continuous DC voltage can be generated at both ends of the semiconductor along the Poynting vector direction.
  • the semiconductor block may be an intrinsic semiconductor or a doped semiconductor having a certain impurity concentration, and a certain impurity concentration may increase the carrier concentration of the semiconductor block and improve the rectification efficiency.
  • concentration of the impurity increases, the properties of the semiconductor also change, that is, the characteristics of the metal conductor are more inclined. Therefore, the highly doped semiconductor will cause an increase in microwave loss and a decrease in rectification efficiency.
  • another factor affecting the rectification efficiency is the length of the semiconductor block in the Poynting vector direction (ie, the length L between the two electrodes in FIG. 1). The longer the length L, the higher the rectification efficiency, but when the length L reaches a certain level, when the skin depth of the microwave is not reached, the increase will not increase the efficiency.
  • the semiconductor block 10 ohmic contact electrode 11 of the present invention functions to facilitate the output of the current generated by the semiconductor block 10 by wire bonding.
  • the ohmic contact electrode 11 is usually a metal electrode, and a metal material can be formed on both ends of the semiconductor block 10 in the vector direction of the Poynting to form an ohmic contact electrode 11 by a sputtering process or a coating process which is mature in semiconductor technology.
  • the number of semiconductor blocks 10 is three, they have the same structure (including constituent materials, geometric dimensions, etc.), and the ohmic contact electrodes are connected by wires, and FIG. 2 is a case of parallel connection, three semiconductors.
  • 63 semiconductor blocks 10 are arranged in a matrix of 7 ⁇ 9 and uniformly distributed on the same planar substrate 1.
  • the substrate 1 is facing the microwave transmission direction (the substrate 1 is perpendicular to the microwave transmission direction), and the semiconductor block
  • the 0 terminal and the P terminal of 10 are both ends in the microwave transmission direction, and the ohmic contact electrode 11 is provided at the 0 terminal and the P terminal of the semiconductor block 10 for outputting the current generated by the semiconductor block 10, as shown in FIG.
  • the ohmic contact electrodes of each semiconductor block can be connected in series in a row, and then each row is connected in parallel. This connection allows the overall output voltage of all semiconductor blocks on substrate 1 to reach 9Uh, which is seven times the current output of a single semiconductor block.
  • the microwave energy conversion device of this example is composed of 252 semiconductor blocks, and they are evenly distributed on four planar substrates arranged side by side, and 63 semiconductor blocks are arranged on each substrate, arranged in a matrix of 7 ⁇ 9, as shown in FIG. This arrangement allows for the reception of microwave radiation over a large area.
  • Each substrate can be connected in the same manner as in Embodiment 2, and then can be used for 4 bases.
  • the plates are combined in series and in parallel. Achieve the required output voltage and current.
  • This example is a structure in which four substrates are arranged in parallel, as shown in Fig. 7 (the number of semiconductor blocks is not shown, and the thickness of the substrate is omitted).
  • the four substrates are parallel and spaced apart by a certain distance, and the arrow is the direction of microwave transmission, which is perpendicular to the plane of the substrate.
  • This configuration can improve the utilization of microwaves, but it is necessary to consider the penetration of microwaves so as not to affect the microwave conversion conversion rate of the rear substrate.
  • the choice of substrate material should reduce the attenuation and loss of microwaves.
  • the ohmic contact electrode should not be too large in area. Generally, as long as the size of the metal electrode is much smaller than the wavelength of the microwave, the transmission of the microwave can be substantially unaffected.

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  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Power Engineering (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

一种微波能量转换装置，包括微波接收单元和微波整流单元。微波接收单元和微波整流单元由半导体块（10）构成，半导体块（10）上设置有欧姆接触电极（11），用于输出半导体块（10）产生的直流电流。欧姆接触电极（11）设置在半导体块（10）沿微波传输方向的两端。该微波能量转换装置根据微波霍尔效应的原理，利用半导体体效应对微波进行整流，将微波接收和微波整流合二为一，简化了电路设计，具有结构简单、易于布置、整流带宽相对较宽等特点。

Description

说 明 书 微波能量转换装置 技术领域
本发明涉及微波传输能量技术， 特别涉及微波接收和整流技术。
背景技术
微波传输能量不仅可以用于空间太阳能电站向地面输送电能， 也可用于从地面向空间飞 行器供能。 该技术还可以在架线困难的地区传输电力， 前景十分广阔。 微波传输能量通常需 要将微波能量转换为电能， 其中将微波能转换为电能的微波整流器是微波传输能量系统的核 心器件之一。早在 1899年， Tesla在 Wardenclyffe进行了无线功率传输的实验。 19世纪 60年 代， Brown提出了微波输能和整流天线的概念， 并于 1963年成功研制了第一个整流天线。现 阶段最常用的微波整流技术是微波二极管整流。 但微波二极管整流存在功率容量小、 微波二 极管易被击穿、 产生高次谐波等影响系统性能的问题。 此外， 虽然现有的二极管整流天线看 似为一体， 既能够接收微波， 又能够整流， 但实质上微波接收天线和微波整流电路是各自独 立的两部分， 且为了做到整流电路与天线的匹配以及抑制二极管产生的高次谐波， 整流电路 的设计往往非常复杂， 这大大的提高了设计难度， 且重量和体积也难以控制。
发明内容
本发明所要解决的技术问题， 就是针对现有技术微波整流装置结构复杂， 设计难度高的 缺点， 提供一种微波接收和微波整流的装置， 将微波能量转换为电流输出。
本发明解决所述技术问题， 采用的技术方案是， 微波能量转换装置， 包括微波接收单元 和微波整流单元， 其特征在于， 所述微波接收单元和微波整流单元由半导体块构成， 所述半 导体块上设置有欧姆接触电极， 用于输出半导体块产生的直流电流， 所述欧姆接触电极设置 在半导体块沿微波传输方向的两端。
本发明根据微波霍尔效应的原理，首次提出了利用半导体体效应对微波进行整流的方法。 我们称之为半导体体效应微波整流法。 该方法与传统二极管结效应整流原理不同， 采用微波 霍尔效应的原理在半导体上产生整流效应， 因此不需要复杂的天线和电路设计， 微波接收和 整流同时在半导体块上完成。
通过理论推导和实验研究， 我们在不使用外加磁场的情况下， 也发现了微波作用于半导 体依然可以产生霍尔效应， 从而在半导体沿坡印廷矢量方向 （微波传输方向） 上产生直流电 压， 于是我们想到利用该原理来做微波整流。 该方法利用平面波的电场分量在单极型 （空穴 型或电子型） 半导体上感应出一个与电场方向相同的电流， 形成这个电流的载流子又在磁场 分量的作用下受到沿坡印廷矢量方向的洛仑兹力， 从而在半导体沿坡印廷矢量方向上产生一 说 明 书
个霍尔电压。 当电场和磁场同时反向时， 洛仑兹力的方向不变， 所以霍尔电压的方向不变， 这样便可在半导体沿坡印廷矢量方向的两端产生一个持续的直流电压。 根据以上原理可见， 本发明接收微波和整流都同时由半导体完成， 所以不需要像传统的整流天线一样由天线和电 路两部分构成， 大大简化了设计难度， 体积和重量也更容易控制， 成本也相应降低。
所述欧姆接触电极为金属电极。
所述金属电极通过溅射工艺或涂敷工艺形成。
半导体块欧姆接触电极的作用是便于通过导线连接， 将半导体块产生的直流电流输出。 欧姆接触电极通常可以采用金属材料， 通过溅射工艺或涂敷工艺制作在半导体块沿坡印廷矢 量方向的两端形成欧姆接触电极。
所述半导体块为本征半导体块。
所述半导体块为掺杂半导体块。
半导体块可以采用本征半导体块或掺杂半导体块。 一定的参杂浓度可以提高半导体块的 整流效率， 随着参杂浓度的提高， 半导体的性质也在发生改变即更倾向于金属的特性， 因此 高参杂的半导体整流效率反而会降低。
所述半导体块数量为 N个， 具有相同结构， 其欧姆接触电极通过导线连接， 使半导体块 产生的直流电流并联和 /或串联输出： N为正整数， N 2。
由于单个半导体块的在微波作用下产生的霍尔电压非常低， 电流非常小， 通常可以将很 多个半导体块进行串联， 以提高输出电压； 或将很多个半导体块进行并联以提高输出电流。 采用结构相同的半导体块， 其电路参数、 产生的电压和电流基本上相等， 方便进行各种连接 和后续处理， 如进行逆变并网等。
所述 N个半导体块布置在同一平面上。
所述平面与微波传输方向垂直。
将 N个半导体块布置在同一平面 （或基板） 上， 并使该平面与微波传输方向垂直， 可以 提高微波能量转换效率， 最大限度的接收微波能量。 当然 N个半导体块也可以布置在非平面 物体的表面， 如布置在飞行器等的表面， 用于接收发射站通过微波传输的能量。
所述 N个半导体块平均布置在 M个平面上， M为正整数， M 2。
如果 N的数字很大， 可以将 N个半导体块平均布置在 M个平面上， 由于每个半导体块结 构相同， 每个平面上布置的半导体块数量相同， 如果每个平面上的半导体块采用相同的连接 方式， 就可以使每个平面的电路结构基本上相同， 输出电压、 电流也基本上相同， 可以将每 个平面作为一个单元， 再进行串联、 并联等连接， 以满足不同的输出电压或电流要求。
所述 M个平面并排布置或平行重叠布置。 说 明 书
M个平面并排布置， 可以使其垂直于微波传输方向， 每个平面互不影响， 有利于提高转 换效率。 这种配置适用于距离微波源比较远的地方进行能量转换。 采用平行重叠布置 M个平 面的方式， 需要考虑微波的衰减特性， 选择适当材料构成的基板可以降低微波衰减。 另外基 板上半导体块的金属电极也可能对微波传输产生阻碍， 需要适当减小金属电极面积。
本发明的有益效果是， 提供了一种结构新颖的微波能量转换装置， 将微波接收和微波整 流合二为一， 极大的简化了电路设计。 由于半导体块布置灵活， 连接方式多种多样， 可以满 足不同输出电压和输出电流的要求。 本发明具有结构简单、 易于布置、 整流带宽相对较宽等 特点。本发明不依靠 PN结整流， 因此在承受较大微波功率时也不存在被击穿的问题， 大大的 提高了装置的可靠性。
附图说明
图 1是半导体块中产生霍尔电压的示意图；
图 2是半导体块并联输出结构示意图；
图 3是半导体块串联输出结构示意图；
图 4是 N个半导体块布置在同一平面的示意图；
图 5是半导体块结构示意图， 图 5a为立体图， 图 5b为图 5a的 A-A剖视图；
图 6是 N个半导体块平均布置在 4个平面上， 4个平面并排布置的示意图；
图 7是 N个半导体块平均布置在 4个平面上， 4个平面重叠布置的示意图。
具体实施方式
下面结合附图及实施例， 详细描述本发明的技术方案。
本发明的微波能量转换装置， 微波直接辐射半导体块， 根据霍尔效应， 在半导体块沿坡 印廷矢量方向 （即微波传输方向） 上产生直流电压。
本发明的微波能量转换装置， 将微波接收单元和微波整流单元， 合二为一， 采用半导体 块 10构成微波接收单元和微波整流单元，微波辐射半导体块 10时，在半导体块 10上沿微波 传输方向的 O端和 P端将会产生霍尔电压 Uh， 在半导体块的该两端设置欧姆接触电极 11， 就可以输出半导体块产生的电流， 如图 1所示。 图 1中， 为坡印廷矢量， 代表微波的传播 方向， 电场分量， ΙΪ为磁场分量， Uh为半导体块产生的霍尔电压， 即这里的微波整流电压。
本发明利用平面波的电场分量在单极型半导体上感应出一个电流， 形成这个电流的载流 子又在平面波的磁场分量的作用下受到沿坡印廷矢量方向的洛仑兹力， 从而在半导体沿坡印 廷矢量方向上产生一个霍尔电压。 当电场和磁场同时反向时， 洛仑兹力的方向不变， 所以霍 尔电压的方向不变， 这样便可在半导体沿坡印廷矢量方向的两端产生一个持续的直流电压。 说 明 书 本发明中半导体块可以采用本征半导体， 也可以采用具有一定参杂浓度的掺杂半导体， 一定的参杂浓度可以提高半导体块载流子浓度， 提高整流效率。 但随着参杂浓度的提高， 半 导体的性质也在发生改变， 即更倾向于金属导体的特性， 因此高参杂的半导体将会导致微波 损耗增加， 降低整流效率。 此外， 另一个影响整流效率的因素是半导体块在坡印廷矢量方向 的长度 （即图 1中两电极间的长度 L)。 长度 L越长整流效率越高， 但当长度 L达到一定的时 候， 微波的趋肤深度达不到的时候， 再增长也不会提高效率了。
本发明中半导体块 10欧姆接触电极 11的作用是便于通过导线连接，将半导体块 10产生 的电流输出。欧姆接触电极 11通常为金属电极， 可以采用半导体技术中成熟的溅射工艺或涂 敷工艺等， 将金属材料制作在半导体块 10沿坡印廷矢量方向的两端形成欧姆接触电极 11。
实施例 1
本例微波能量转换装置中， 半导体块 10的数量为 3个， 他们具有相同结构（包括组成材 料、 几何尺寸等）， 其欧姆接触电极通过导线连接， 图 2为并联连接的情况， 3个半导体块产 生的电流并联输出， 其输出电压 Uo=Uh， 输出电流可以达到单个半导体块的 3倍。 图 3为 3 个半导体块串联连接的示意图， 其输出电压 Uo=3Uh， 输出电流与单个半导体块的输出电流相 等。
实施例 2
由于单个半导体块的在微波作用下产生的霍尔电压非常低， 电流非常小， 通常可以将很 多个半导体块进行串联， 以提高输出电压； 或将很多个半导体块进行并联以提高输出电流。 采用结构相同的半导体块， 其电路参数、 产生的电压和电流基本上相等， 方便进行各种连接 和后续处理。 本例微波能量转换装置包括 N (N=63) 个具有相同结构的半导体块构成的微波 接收和整流单元， 如图 4所示。 图中， 63个半导体块 10排列成 7 X 9的矩阵， 均匀分布在同 一平面基板 1上， 为了提高微波接收效率， 基板 1正对微波传输方向 （基板 1与微波传输方 向垂直）， 半导体块 10的 0端和 P端即为沿微波传输方向的两端， 欧姆接触电极 11设置在半 导体块 10的 0端和 P端， 用于输出半导体块 10产生的电流， 见图 5所示。 图 4所示的这种 半导体块分布方式， 每个半导体块的欧姆接触电极可以先按行串联起来， 然后将每一行并联 起来。 这种连接方式可以使基板 1上所有半导体块的整体输出电压达到 9Uh， 电流达到单个 半导体块输出电流的 7倍。
实施例 3
本例微波能量转换装置由 252个半导体块构成， 他们平均分布中 4个并排布置的平面基 板上， 每个基板上布置 63个半导体块， 排列成 7 X 9的矩阵， 如图 6所示。 这种布置方式可 以大面积的接收微波辐射。 每个基板可以按照实施例 2的方式进行连接， 然后可以对 4个基 板进行串联、 并联组合。 达到需要的输出电压和电流。
实施例 4
本例是 4个基板平行重叠配置的结构， 如图 7所示 （图中未示出半导体块的数量， 忽略 了基板的厚度）。 图中 4张基板平行， 间隔一定的距离， 箭头为微波传输方向， 该方向垂直于 基板平面。 这种配置可以提高微波的利用率， 但需要考虑微波的穿透性， 以免影响后面基板 的微波转换转换率。 基板材料的选择应降低对微波的衰减和损耗， 欧姆接触电极也不应面积 太大， 通常只要金属电极的尺寸远小于说微波波长， 微波的传输就可以基本上不受影响。
书

Claims

权利要求书
1、 微波能量转换装置， 包括微波接收单元和微波整流单元， 其特征在于， 所述微波接收 单元和微波整流单元由半导体块构成， 所述半导体块上设置有欧姆接触电极， 用于输出半导 体块产生的直流电流， 所述欧姆接触电极设置在半导体块沿微波传输方向的两端。
2、根据权利要求 1所述的微波能量转换装置， 其特征在于， 所述欧姆接触电极为金属电 极。
说
3、根据权利要求 2所述的微波能量转换装置， 其特征在于， 所述金属电极通过溅射工艺 或涂敷工艺形成。
4、根据权利要求 1所述的微波能量转换装置书， 其特征在于， 所述半导体块为本征半导体 块。
5、根据权利要求 1所述的微波能量转换装置， 其特征在于， 所述半导体块为掺杂半导体 块。
6、 根据权利要求 1〜5任意一项所述的微波能量转换装置， 其特征在于， 所述半导体块 数量为 N个， 具有相同结构， 其欧姆接触电极通过导线连接， 使半导体块产生的直流电流并 联和 /或串联输出； N为正整数， N 2。
7、根据权利要求 6所述的微波能量转换装置， 其特征在于， 所述 N个半导体块布置在同 一平面上。
8、根据权利要求 7所述的微波能量转换装置， 其特征在于， 所述平面与微波传输方向垂 直。
9、根据权利要求 6所述的微波能量转换装置， 其特征在于， 所述 N个半导体块平均布置 在 M个平面上， M为正整数， M 2。
10、 根据权利要求 9所述的微波能量转换装置， 其特征在于， 所述 M个平面并排布置或 平行重叠布置。
PCT/CN2013/071366 2012-12-07 2013-02-05 微波能量转换装置 Ceased WO2014086110A1 (zh)

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