WO2014078134A3 - Semiconductor package with a die to die first bond - Google Patents
Semiconductor package with a die to die first bond Download PDFInfo
- Publication number
- WO2014078134A3 WO2014078134A3 PCT/US2013/068544 US2013068544W WO2014078134A3 WO 2014078134 A3 WO2014078134 A3 WO 2014078134A3 US 2013068544 W US2013068544 W US 2013068544W WO 2014078134 A3 WO2014078134 A3 WO 2014078134A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- die
- interposer
- semiconductor
- bonding
- semiconductor die
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 10
- 239000000463 material Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000012790 adhesive layer Substances 0.000 abstract 1
- 238000007906 compression Methods 0.000 abstract 1
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 abstract 1
Classifications
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- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Wire Bonding (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Dicing (AREA)
Abstract
Methods for a semiconductor device package with a die-to-die first bond are disclosed and may include bonding one or more semiconductor die comprising electronic devices to an interposer die. An underfill material may be applied between the semiconductor die and the interposer die, and a mold material may be applied to encapsulate the semiconductor die. The interposer die may be thinned to expose through-silicon-vias (TSVs). The bonding of the semiconductor die may comprise adhering the semiconductor die to an adhesive layer, and bonding the semiconductor die to the interposer die. The semiconductor die may comprise micro-bumps for coupling to the interposer die, wherein the bonding comprises: positioning the micro-bumps in respective wells in a layer disposed on the interposer die; and bonding the micro-bumps to the interposer die. The semiconductor die may be bonded to the interposer die utilizing a mass reflow process or a thermal compression process.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020177027284A KR20170116185A (en) | 2012-11-15 | 2013-11-05 | Method for semiconductor device packaging with a die to die first bond |
KR1020177026182A KR20170107596A (en) | 2012-11-15 | 2013-11-05 | Method And System For Semiconductor Device Package With A Die-To-Die First Bond |
KR1020157015868A KR20150106877A (en) | 2012-11-15 | 2013-11-05 | Method And System For A Semiconductor Device Package With A Die-To-Die First Bond |
Applications Claiming Priority (6)
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US13/678,012 US8796072B2 (en) | 2012-11-15 | 2012-11-15 | Method and system for a semiconductor device package with a die-to-die first bond |
US13/678,058 US9136159B2 (en) | 2012-11-15 | 2012-11-15 | Method and system for a semiconductor for device package with a die-to-packaging substrate first bond |
US13/678,058 | 2012-11-15 | ||
US13/678,012 | 2012-11-15 | ||
US13/678,046 | 2012-11-15 | ||
US13/678,046 US9040349B2 (en) | 2012-11-15 | 2012-11-15 | Method and system for a semiconductor device package with a die to interposer wafer first bond |
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WO2014078134A2 WO2014078134A2 (en) | 2014-05-22 |
WO2014078134A3 true WO2014078134A3 (en) | 2014-07-10 |
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PCT/US2013/068544 WO2014078134A2 (en) | 2012-11-15 | 2013-11-05 | Method and system for a semiconductor device package with a die-to-die first bond |
PCT/US2013/068510 WO2014078130A1 (en) | 2012-11-15 | 2013-11-05 | Semiconductor device package with a die to interposer wafer first bond |
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PCT/US2013/068510 WO2014078130A1 (en) | 2012-11-15 | 2013-11-05 | Semiconductor device package with a die to interposer wafer first bond |
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WO (2) | WO2014078134A2 (en) |
Cited By (1)
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CN107408516A (en) * | 2015-02-11 | 2017-11-28 | 应美盛股份有限公司 | Integrated using the 3D of Al Ge eutectic bonding connection components |
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US20150380343A1 (en) * | 2014-06-27 | 2015-12-31 | Raytheon Company | Flip chip mmic having mounting stiffener |
US20200168527A1 (en) * | 2018-11-28 | 2020-05-28 | Taiwan Semiconductor Manfacturing Co., Ltd. | Soic chip architecture |
CN114330201A (en) * | 2020-09-29 | 2022-04-12 | 中科寒武纪科技股份有限公司 | Packaging structure, device, board card and method for arranging integrated circuit |
US20230326887A1 (en) * | 2022-04-11 | 2023-10-12 | Western Digital Technologies, Inc. | Clamped semiconductor wafers and semiconductor devices |
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US20130187258A1 (en) * | 2012-01-23 | 2013-07-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Sawing Underfill in Packaging Processes |
US20130217188A1 (en) * | 2012-02-16 | 2013-08-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structures and Formation Methods of Packages with Heat Sinks |
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KR20050054010A (en) * | 2003-12-03 | 2005-06-10 | 삼성전자주식회사 | Interposer attaching method used in manufacturing process for stack type semiconductor chip package |
JP5618537B2 (en) | 2006-03-21 | 2014-11-05 | プロメラス,エルエルシー | Methods and materials useful for chip stacking and chip / wafer bonding |
US7838337B2 (en) * | 2008-12-01 | 2010-11-23 | Stats Chippac, Ltd. | Semiconductor device and method of forming an interposer package with through silicon vias |
US8642448B2 (en) * | 2010-06-22 | 2014-02-04 | Applied Materials, Inc. | Wafer dicing using femtosecond-based laser and plasma etch |
US9224647B2 (en) | 2010-09-24 | 2015-12-29 | Stats Chippac, Ltd. | Semiconductor device and method of forming TSV interposer with semiconductor die and build-up interconnect structure on opposing surfaces of the interposer |
US8994048B2 (en) * | 2010-12-09 | 2015-03-31 | Stats Chippac, Ltd. | Semiconductor device and method of forming recesses in substrate for same size or different sized die with vertical integration |
KR101719636B1 (en) * | 2011-01-28 | 2017-04-05 | 삼성전자 주식회사 | Semiconductor device and fabricating method thereof |
KR101817159B1 (en) * | 2011-02-17 | 2018-02-22 | 삼성전자 주식회사 | Semiconductor package having TSV interposer and method of manufacturing the same |
US8268677B1 (en) * | 2011-03-08 | 2012-09-18 | Stats Chippac, Ltd. | Semiconductor device and method of forming shielding layer over semiconductor die mounted to TSV interposer |
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2013
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- 2013-11-05 KR KR1020157015868A patent/KR20150106877A/en not_active Application Discontinuation
- 2013-11-05 WO PCT/US2013/068544 patent/WO2014078134A2/en active Application Filing
- 2013-11-05 KR KR1020177026182A patent/KR20170107596A/en active Search and Examination
- 2013-11-05 WO PCT/US2013/068510 patent/WO2014078130A1/en active Application Filing
- 2013-11-05 KR KR1020157015867A patent/KR101709029B1/en active IP Right Grant
Patent Citations (2)
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US20130187258A1 (en) * | 2012-01-23 | 2013-07-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Sawing Underfill in Packaging Processes |
US20130217188A1 (en) * | 2012-02-16 | 2013-08-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structures and Formation Methods of Packages with Heat Sinks |
Cited By (1)
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CN107408516A (en) * | 2015-02-11 | 2017-11-28 | 应美盛股份有限公司 | Integrated using the 3D of Al Ge eutectic bonding connection components |
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KR101709029B1 (en) | 2017-02-21 |
KR20170116185A (en) | 2017-10-18 |
KR20170107596A (en) | 2017-09-25 |
WO2014078130A1 (en) | 2014-05-22 |
KR20150106877A (en) | 2015-09-22 |
WO2014078134A2 (en) | 2014-05-22 |
KR20150087301A (en) | 2015-07-29 |
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