WO2014059833A1 - Pressure sensor - Google Patents

Pressure sensor Download PDF

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Publication number
WO2014059833A1
WO2014059833A1 PCT/CN2013/082640 CN2013082640W WO2014059833A1 WO 2014059833 A1 WO2014059833 A1 WO 2014059833A1 CN 2013082640 W CN2013082640 W CN 2013082640W WO 2014059833 A1 WO2014059833 A1 WO 2014059833A1
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Prior art keywords
pressure sensor
silicon
pressure
silicon cup
metal film
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PCT/CN2013/082640
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French (fr)
Chinese (zh)
Inventor
张新伟
夏长奉
李祥
苏巍
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无锡华润上华半导体有限公司
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Publication of WO2014059833A1 publication Critical patent/WO2014059833A1/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/04—Means for compensating for effects of changes of temperature, i.e. other than electric compensation

Definitions

  • the invention relates to a sensor, in particular to a pressure sensor of a MEMS technology of a microelectromechanical system.
  • Pressure sensors are used in a wide range of applications, including petrochemicals, hydraulics, food, pharmaceuticals, machinery, mining, electrical appliances, and medical instruments, in virtually every industry.
  • pressure sensors include pressure sensitive components that are made on a silicon film and that are subject to stress-induced resistance changes.
  • the piezoresistance coefficient of the silicon film decreases, resulting in a decrease in the output signal of the device at the same pressure (that is, the sensitivity of the device is lowered).
  • the piezoresistive coefficient of P-type silicon changes with the doping concentration and temperature
  • the piezoresistive coefficient of N-type silicon shown in Fig. 1(b) follows the doping concentration.
  • temperature trend chart therefore, it indicates that there are temperature characteristics of this type of pressure sensor, especially for some high-demand applications (such as special occasions such as high temperature and high pressure), especially the temperature characteristics of the pressure sensor are small or not.
  • the present invention provides the following technical solutions:
  • a pressure sensor includes a silicon cup, a varistor, an insulating layer, and a metal film; wherein the silicon cup includes a pressure sensitive film and a support frame; the varistor is located within a pressure sensitive film boundary of the silicon cup; An insulating layer covers the upper surface of the silicon cup; the metal film is located above the pressure sensitive film.
  • the metal film is circular or polygonal.
  • the metal film is rectangular.
  • the material of the metal film is selected from one or more of Al, Au, Ti, and Cu.
  • the metal film is disposed on the insulating layer, and is separated from the pressure sensitive film by the insulating layer.
  • the material of the insulating layer is silicon dioxide or silicon nitride.
  • the varistor is interposed between the pressure sensitive film and the insulating layer, and is led out by a resistance terminal located at both ends of the varistor.
  • the silicon cup is further provided with a substrate lead-out end, and the substrate lead-out end is located above the support frame of the silicon cup.
  • the pressure sensor further includes a sealing sheet connected to the underside of the silicon cup by a bonding and sealing process.
  • the sealing sheet material is a glass piece or a single crystal silicon piece.
  • the technical effect of the present invention is that the pressure sensor utilizes the characteristic that the metal has thermal expansion and contraction, and a metal film is placed over the pressure sensitive film, and the metal film becomes longer when the temperature rises, forcing the pressure sensitive film on the silicon cup to be larger.
  • the deformation compensates for or reduces the problem of reducing the sensor output signal due to the use of temperature rise.
  • the present invention also provides a substrate lead-out end on the silicon cup to facilitate the output effect of the pressure sensor signal.
  • Fig. 1(a) is a graph showing the change of the piezoresistance coefficient of P-type silicon with the doping concentration and temperature.
  • Fig. 1(b) is a graph showing the change of the piezoresistance coefficient of N-type silicon with the doping concentration and temperature.
  • Fig. 2 is a front elevational view of a pressure sensor according to an embodiment of the present invention.
  • Figure 3 is a top plan view of the pressure sensor of Figure 2 in accordance with an embodiment of the present invention.
  • Figure 4 is a cross-sectional view of the pressure sensor of Figure 2 in an embodiment of the invention.
  • FIG. 2 is a front view of a pressure sensor according to an embodiment of the present invention
  • FIG. 3 is a plan view of the pressure sensor of FIG. 2
  • FIG. 4 is a plan view of the pressure sensor of FIG.
  • the present embodiment describes the pressure sensor by means of Figs. 2, 3 and 4.
  • the principle of this embodiment is to use a varistor which is caused by stress-induced resistance change on the pressure-sensitive film and utilizes the characteristics of thermal expansion and contraction of the metal to compensate the pressure sensor, that is, By increasing the temperature of the sensor, the metal film is lengthened, thereby forcing the deformation of the pressure sensitive film on the silicon cup to increase the output signal, thereby canceling or reducing the sensor output signal caused by the temperature rise. Reduced.
  • the pressure sensor provided by the present invention mainly comprises a silicon cup 20, a varistor 30, an insulating layer 40 and a metal film 50.
  • the silicon cup 20 includes a pressure sensitive film 202 on the upper portion of the silicon cup and a support frame 201 on both sides of the silicon cup.
  • the pressure sensitive film 202 can be square or circular or rectangular. Or a polygon, the thickness of which is generally greater than 5 ⁇ m, and sometimes even several hundred microns.
  • the single crystal silicon substrate is usually double-sided polished, and then a mask layer composed of LPTOES and SiN is deposited on the lower surface of the substrate, and is etched by a solution having a constant temperature between 50 ° C and 90 ° C and a concentration of 25% TAMH.
  • the silicon cup 20 is formed and a cavity 21 is formed on the back surface thereof.
  • the substrate lead-out end 22 is also formed by N-type silicon high-concentration doping lithography implantation on the silicon cup 20 of the pressure sensor. As shown in FIG. 2 and FIG. 3 in this embodiment, the substrate lead-out end 22 is located within the boundary of the support frame 201 of the silicon cup 20, and is electrically connected to the metal lead 65 passing through the insulating layer 40. And derive the signal to the external circuit.
  • the varistor 30 is usually formed by immersion implantation of P-type silicon at a low concentration, and is located in the boundary of the pressure-sensitive film 202 of the silicon cup 20, interposed between the pressure-sensitive film 202 and
  • the insulating layer 40 has a thickness of 0.1 to 10 ⁇ m.
  • the varistor 30 has a total of four and constitutes a Wheatstone bridge.
  • the varistor can also be one or eight, that is to say, the number of the varistor can be selected according to the requirements of actual use, and is not limited thereto.
  • the varistor 30 is an output signal that converts a change in stress generated by the pressure-sensitive film 202 into a change in resistance value.
  • the varistor 30 includes a resistor terminal 301 which is lithographically implanted with P-type silicon high-density doping and with metal leads 61, 62, 63 passing through the insulating layer 40, 64 electrical connection.
  • the metal lead is electrically connected to the varistor 30 to realize connection of the pressure sensor to an external circuit (not shown).
  • the metal lead is usually preferably Al (aluminum), and in addition to this, Au (gold) or Ti (titanium) or Cu (copper) may be used.
  • the insulating layer 40 is connected to the silicon cup 20, and is formed into a silicon dioxide layer (or a silicon nitride layer) by a CVD (Chemical Weather Method) or a thermal oxygen process, and has a thickness of 0.1 ⁇ m to 2 ⁇ m.
  • the insulating layer 40 is for isolating the pressure sensitive film 202 from the metal lead and the pressure sensitive film 202 and the metal film 50 to provide insulation.
  • the material of the metal film 50 may be selected from one or more of Al (aluminum), Au (gold), Ti (titanium), and Cu (copper), or other thermal expansion coefficient. material. In the present embodiment, an Al (aluminum) material is preferred.
  • the metal film 50 is located above the pressure sensitive film 202. Since the size and thickness of the metal film are also required according to different process requirements, the size of the metal film varies with the thickness of the pressure sensitive film in different devices. For example, in this embodiment, the size of the metal film is 2 mm ⁇ 2 mm, and the thickness is 0.7. Mm.
  • the metal film 50 becomes longer as the temperature of use of the sensor increases due to thermal expansion and contraction of the metal, forcing the deformation of the pressure sensitive film 202 on the silicon cup 20 to cause a larger output signal. Increase, thereby canceling each other or reducing the problem of a decrease in output signal due to an increase in the operating temperature of the sensor.
  • the pressure sensor may further include a sealing sheet (not shown), which may be a glass sealing sheet or a silicon sealing sheet.
  • the sealing sheet is exemplified by a glass sheet, and the sealing sheet can be sealed with the underside of the silicon cup by a bonding process in a vacuum environment, that is, connected to the support frame of the silicon cup.
  • This structure is also a common technique known to those skilled in the art and will not be described herein.
  • the general process flow involved in the pressure sensor described in the above embodiment is specifically described as follows: First, a mask layer composed of LPTOES and SiN is deposited on the lower surface of the double-sided polished single crystal silicon substrate (not shown). Secondly, the varistor 30 is obtained by performing P-type low concentration doping on the single crystal silicon substrate, and the P-type high concentration doping is further performed on both ends of the varistor 30 to obtain the resistance terminal 301. Third, according to the device The N-type high concentration doping is performed on the single crystal silicon substrate to obtain the substrate lead-out end 22; fourth, the silicon oxide layer (or silicon nitride layer) and the metal Al are grown on the front side of the single crystal silicon substrate.
  • the silicon dioxide layer is an insulating layer, a part of the metal Al layer forms a metal lead, and another part forms a metal film; and fifth, the single crystal silicon is etched by a solution having a constant temperature of 80 ° C and a concentration of 25% TAMH
  • the back surface of the substrate finally forms the silicon cup 20, and the back surface of the silicon cup 20 is a cavity 21; sixthly, the sealing sheet can be sealed with the same length as the silicon cup by a bonding process according to the process requirements and the use of the device. Below the silicon cup 20.
  • the pressure sensor utilizes the characteristic that the metal has thermal expansion and contraction, and a metal film is placed above the pressure sensitive film, and the metal film becomes longer when the temperature rises, and the pressure sensitive film on the silicon cup can be forced to be more deformed to offset or reduce. The problem of reducing the sensor output signal due to the increase in temperature.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

A pressure sensor, comprising: a silicon cup (20), a voltage dependent resistor (30), an insulation layer (40) and a metal film (50). The silicon cup (20) comprises a pressure-sensing film (202) located on the upper part of the silicon cup (20) and a bracket (201) located at the side edge of the silicon cup (20). The voltage dependent resistor (30) is located within the boundary of the pressure-sensing film (202) of the silicon cup (20). The insulation layer (40) covers the upper surface of the silicon cup (20). The metal film (50) is located above the pressure-sensing film (202). Using the characteristic of thermal expansion and cold contraction of metal, the metal film (50) is placed above the pressure-sensing film (202), when the metal film (50) becomes elongated while temperature rises, the pressure-sensing film (202) on the silicon cup (20) is forced to generate larger deformation so as to offset or reduce the defect that an output signal of the sensor is reduced because of the rise of the usage temperature.

Description

一种压力传感器Pressure sensor
【技术领域】[Technical Field]
本发明涉及传感器，具体涉及一种微机电系统MEMS技术的压力传感器。The invention relates to a sensor, in particular to a pressure sensor of a MEMS technology of a microelectromechanical system.
【背景技术】【Background technique】
压力传感器的应用范围非常广泛，包括石化、液压、食品、医药、机械、采矿、电器以及医疗仪器等，几乎遍及各行各业。Pressure sensors are used in a wide range of applications, including petrochemicals, hydraulics, food, pharmaceuticals, machinery, mining, electrical appliances, and medical instruments, in virtually every industry.
目前，压力传感器包括做在硅膜上的由应力引起电阻阻值变化的压力敏感元件。该传感器在工作温度升高时，硅膜的压阻系数降低，从而导致在相同压力下器件的输出信号降低（也即是器件的灵敏度下降）。例如：如图1（a）所示的P型硅的压阻系数随着掺杂浓度和温度的变化趋势图，图1（b）所示的N型硅的压阻系数随着掺杂浓度和温度的变化趋势图。籍此，表明该类压力传感器存在温度特性，尤其对于一些高要求应用场合（例如：高温高压等特殊场合），特别要求压力传感器的这种温度特性很小，甚至没有。Currently, pressure sensors include pressure sensitive components that are made on a silicon film and that are subject to stress-induced resistance changes. When the operating temperature rises, the piezoresistance coefficient of the silicon film decreases, resulting in a decrease in the output signal of the device at the same pressure (that is, the sensitivity of the device is lowered). For example, as shown in Fig. 1(a), the piezoresistive coefficient of P-type silicon changes with the doping concentration and temperature, and the piezoresistive coefficient of N-type silicon shown in Fig. 1(b) follows the doping concentration. And temperature trend chart. Therefore, it indicates that there are temperature characteristics of this type of pressure sensor, especially for some high-demand applications (such as special occasions such as high temperature and high pressure), especially the temperature characteristics of the pressure sensor are small or not.
有鉴于此，有必要提出一种改善压力传感器的温度特性灵敏度的新型压力传感器。In view of this, it is necessary to propose a novel pressure sensor that improves the sensitivity of the temperature characteristics of the pressure sensor.
【发明内容】[Summary of the Invention]
本发明的目的在于提供一种可改善温度特性灵敏度的压力传感器。It is an object of the present invention to provide a pressure sensor which can improve the sensitivity of temperature characteristics.
为实现以上目的或者其他目的，本发明提供如下技术方案：To achieve the above object or other objects, the present invention provides the following technical solutions:
一种压力传感器包括硅杯、压敏电阻、绝缘层和金属膜；其中，所述硅杯包括感压膜和支撑架；所述压敏电阻位于该硅杯的感压膜边界内；所述绝缘层覆盖于所述硅杯上表面；所述金属膜位于所述感压膜上方。A pressure sensor includes a silicon cup, a varistor, an insulating layer, and a metal film; wherein the silicon cup includes a pressure sensitive film and a support frame; the varistor is located within a pressure sensitive film boundary of the silicon cup; An insulating layer covers the upper surface of the silicon cup; the metal film is located above the pressure sensitive film.
按照本发明一实施例，其中，所述金属膜是圆形或多边形。According to an embodiment of the invention, the metal film is circular or polygonal.
进一步地，所述金属膜是矩形。Further, the metal film is rectangular.
按照本发明一实施例，其中，所述金属膜的材料选自Al、Au、Ti、Cu中的一种或多种。According to an embodiment of the invention, the material of the metal film is selected from one or more of Al, Au, Ti, and Cu.
按照本发明一实施例，其中，所述金属膜设置于所述绝缘层之上，由所述绝缘层将其与所述感压膜隔开。According to an embodiment of the invention, the metal film is disposed on the insulating layer, and is separated from the pressure sensitive film by the insulating layer.
按照本发明一实施例，其中，所述绝缘层的材料为二氧化硅或氮化硅。According to an embodiment of the invention, the material of the insulating layer is silicon dioxide or silicon nitride.
按照本发明一实施例，其中，所述压敏电阻介于所述感压膜与所述绝缘层之间，由位于所述压敏电阻两端的电阻引出端引出。According to an embodiment of the invention, the varistor is interposed between the pressure sensitive film and the insulating layer, and is led out by a resistance terminal located at both ends of the varistor.
按照本发明一实施例，其中，所述硅杯还设有衬底引出端，该衬底引出端位于所述硅杯的支撑架上方。According to an embodiment of the invention, the silicon cup is further provided with a substrate lead-out end, and the substrate lead-out end is located above the support frame of the silicon cup.
按照本发明一实施例，其中，所述压力传感器还包括与所述硅杯下方通过键合封接工艺连接在一起的密封片。According to an embodiment of the invention, the pressure sensor further includes a sealing sheet connected to the underside of the silicon cup by a bonding and sealing process.
进一步地，所述密封片材料为玻璃片或单晶硅片。Further, the sealing sheet material is a glass piece or a single crystal silicon piece.
本发明的技术效果是，该压力传感器利用金属具有热胀冷缩的特性，在感压膜上方放置金属膜，通过金属膜在温度升高时变长，迫使硅杯上感压膜发生更大变形来抵消或减少因使用温度升高使传感器输出信号减小的问题。改善压力传感器的因使用温度的升高而使输出信号减小的技术问题。此外，本发明还在硅杯上设置衬底引出端，以有利于该压力传感器信号的输出效果。The technical effect of the present invention is that the pressure sensor utilizes the characteristic that the metal has thermal expansion and contraction, and a metal film is placed over the pressure sensitive film, and the metal film becomes longer when the temperature rises, forcing the pressure sensitive film on the silicon cup to be larger. The deformation compensates for or reduces the problem of reducing the sensor output signal due to the use of temperature rise. A technical problem of improving the output signal of the pressure sensor due to an increase in the use temperature. In addition, the present invention also provides a substrate lead-out end on the silicon cup to facilitate the output effect of the pressure sensor signal.
【附图说明】[Description of the Drawings]
从结合附图的以下详细说明中，将会使本发明的上述和其他目的及优点更加完全清楚，其中，相同或相似的要素采用相同的标号表示。The above and other objects and advantages of the present invention will be more fully understood from the aspects of the appended claims.
图1（a）是P型硅的压阻系数随着掺杂浓度和温度的变化趋势图。Fig. 1(a) is a graph showing the change of the piezoresistance coefficient of P-type silicon with the doping concentration and temperature.
图1（b）是N型硅的压阻系数随着掺杂浓度和温度的变化趋势图。Fig. 1(b) is a graph showing the change of the piezoresistance coefficient of N-type silicon with the doping concentration and temperature.
图2是本发明一实施例的压力传感器的主视图。Fig. 2 is a front elevational view of a pressure sensor according to an embodiment of the present invention.
图3是图2在本发明一实施例的压力传感器的俯视图。Figure 3 is a top plan view of the pressure sensor of Figure 2 in accordance with an embodiment of the present invention.
图4是图2在本发明一实施例中压力传感器的剖面图。Figure 4 is a cross-sectional view of the pressure sensor of Figure 2 in an embodiment of the invention.
【具体实施方式】 【detailed description】
本发明以下结合附图和实施例作详细说明：The invention will be described in detail below with reference to the accompanying drawings and embodiments:
图2是本发明一实施例的压力传感器的主视图；图3是图2中压力传感器的俯视图；图4是图2中压力传感器的俯视图。本实施例通过图2、图3和图4对压力传感器进行说明。本实施例的原理是：采用一种由做在感压膜上的由应力引起电阻阻值变化的压敏电阻以及利用了金属的热胀冷缩的特性来对压力传感器进行信号补偿，也就是通过传感器温度的升高，让金属膜变长，从而迫使硅杯上的感压膜发生更大的形变以使输出信号增加，这样也就能相互抵消或减少因温度升高造成的传感器输出信号减小。2 is a front view of a pressure sensor according to an embodiment of the present invention; FIG. 3 is a plan view of the pressure sensor of FIG. 2; and FIG. 4 is a plan view of the pressure sensor of FIG. The present embodiment describes the pressure sensor by means of Figs. 2, 3 and 4. The principle of this embodiment is to use a varistor which is caused by stress-induced resistance change on the pressure-sensitive film and utilizes the characteristics of thermal expansion and contraction of the metal to compensate the pressure sensor, that is, By increasing the temperature of the sensor, the metal film is lengthened, thereby forcing the deformation of the pressure sensitive film on the silicon cup to increase the output signal, thereby canceling or reducing the sensor output signal caused by the temperature rise. Reduced.
如图2和图3所示，本发明提供的压力传感器，主要由硅杯20、压敏电阻30、绝缘层40和金属膜50组成。As shown in FIG. 2 and FIG. 3, the pressure sensor provided by the present invention mainly comprises a silicon cup 20, a varistor 30, an insulating layer 40 and a metal film 50.
如图2并结合图3和图4所示，该硅杯20包括位于硅杯上部的感压膜202和位于硅杯两边的支撑架201，该感压膜202可为方形或圆形或矩形或多边形，其厚度一般大于5μm，甚至有时候可达几百微米。所述感压膜202加上压力时，膜片将发生变化，并引起桥路电阻值发生变化，从而实现压力的测量。As shown in FIG. 2 and in conjunction with FIG. 3 and FIG. 4, the silicon cup 20 includes a pressure sensitive film 202 on the upper portion of the silicon cup and a support frame 201 on both sides of the silicon cup. The pressure sensitive film 202 can be square or circular or rectangular. Or a polygon, the thickness of which is generally greater than 5 μm, and sometimes even several hundred microns. When the pressure sensitive film 202 is pressurized, the diaphragm will change and cause a change in the bridge resistance value, thereby achieving pressure measurement.
通常对单晶硅衬底双面抛光，然后使其衬底下表面淀积由LPTOES和SiN组成的掩膜层，采用温度恒定在50℃-90℃之间，浓度为25%TAMH的溶液腐蚀而成所述硅杯20，并在其背面形成一腔体21。The single crystal silicon substrate is usually double-sided polished, and then a mask layer composed of LPTOES and SiN is deposited on the lower surface of the substrate, and is etched by a solution having a constant temperature between 50 ° C and 90 ° C and a concentration of 25% TAMH. The silicon cup 20 is formed and a cavity 21 is formed on the back surface thereof.
而一般为了有利于压力传感器信号的输出，也通常在所述压力传感器的硅杯20上通过N型硅高浓度掺杂光刻注入形成衬底引出端22。如本实施例中图2和图3所示，该衬底引出端22位于所述硅杯20的支撑架201的边界内，且通过与穿过所述绝缘层40的金属引线65电性连接并向外界电路导出信号。Generally, in order to facilitate the output of the pressure sensor signal, the substrate lead-out end 22 is also formed by N-type silicon high-concentration doping lithography implantation on the silicon cup 20 of the pressure sensor. As shown in FIG. 2 and FIG. 3 in this embodiment, the substrate lead-out end 22 is located within the boundary of the support frame 201 of the silicon cup 20, and is electrically connected to the metal lead 65 passing through the insulating layer 40. And derive the signal to the external circuit.
如图4所示，该压敏电阻30通常由P型硅低浓度掺杂后光刻注入而成，其位于该硅杯20的感压膜202边界内，介于所述感压膜202与所述绝缘层40之间，其厚度为0.1～10μm。在本实施例中，该压敏电阻30共计4个，并构成惠斯顿电桥。除此之外所述压敏电阻还可以为1个或8个，也就是说所述压敏电阻的个数可根据实际使用的要求选择，在此不作多加限定。所述压敏电阻30是将感压膜202产生的应力变化转换为电阻值变化的输出信号。该压敏电阻30包括电阻引出端301，该电阻引出端301是由P型硅高浓度掺杂后光刻注入而成，并与穿过所述绝缘层40的金属引线61、62、63、64电性连接。其中，所述金属引线通过电性连接所述压敏电阻30，以实现该压力传感器与外接电路（图中未示）的连接。所述金属引线通常优选用Al（铝），除此之外还可以选用Au（金）或Ti（钛）或Cu（铜）。As shown in FIG. 4, the varistor 30 is usually formed by immersion implantation of P-type silicon at a low concentration, and is located in the boundary of the pressure-sensitive film 202 of the silicon cup 20, interposed between the pressure-sensitive film 202 and The insulating layer 40 has a thickness of 0.1 to 10 μm. In the present embodiment, the varistor 30 has a total of four and constitutes a Wheatstone bridge. In addition, the varistor can also be one or eight, that is to say, the number of the varistor can be selected according to the requirements of actual use, and is not limited thereto. The varistor 30 is an output signal that converts a change in stress generated by the pressure-sensitive film 202 into a change in resistance value. The varistor 30 includes a resistor terminal 301 which is lithographically implanted with P-type silicon high-density doping and with metal leads 61, 62, 63 passing through the insulating layer 40, 64 electrical connection. The metal lead is electrically connected to the varistor 30 to realize connection of the pressure sensor to an external circuit (not shown). The metal lead is usually preferably Al (aluminum), and in addition to this, Au (gold) or Ti (titanium) or Cu (copper) may be used.
该绝缘层40是与所述硅杯20连接的，并通过CVD（化学气象法）或热氧工艺制作成二氧化硅层（或氮化硅层），其厚度为0.1μm~2μm。所述绝缘层40是用于隔离所述感压膜202与金属引线以及所述感压膜202与所述金属膜50，起到绝缘作用。The insulating layer 40 is connected to the silicon cup 20, and is formed into a silicon dioxide layer (or a silicon nitride layer) by a CVD (Chemical Weather Method) or a thermal oxygen process, and has a thickness of 0.1 μm to 2 μm. The insulating layer 40 is for isolating the pressure sensitive film 202 from the metal lead and the pressure sensitive film 202 and the metal film 50 to provide insulation.
继续如图4所示，该金属膜50的材料可选自Al（铝）、Au（金）、Ti（钛）、Cu（铜）中的一种或多种，或者其他热膨胀系数较大的材料。在本实施例中，优选Al（铝）材。该金属膜50位于所述感压膜202上方。由于根据不同的工艺要求，对金属膜的尺寸和厚度也有要求，而所述金属膜的尺寸是随着不同器件中的所述感压膜的厚度不同而不同。比如在本实施例中，所述金属膜的尺寸为2mm×2mm，厚度为0.7 mm。在压力传感器中，由于金属的热胀冷缩，该金属膜50随着传感器使用温度的升高而变长，迫使所述硅杯20上的感压膜202发生更大的形变以使输出信号增加，从而相互抵消或减少因传感器的使用温度升高造成输出信号减少的问题。Continuing with FIG. 4, the material of the metal film 50 may be selected from one or more of Al (aluminum), Au (gold), Ti (titanium), and Cu (copper), or other thermal expansion coefficient. material. In the present embodiment, an Al (aluminum) material is preferred. The metal film 50 is located above the pressure sensitive film 202. Since the size and thickness of the metal film are also required according to different process requirements, the size of the metal film varies with the thickness of the pressure sensitive film in different devices. For example, in this embodiment, the size of the metal film is 2 mm × 2 mm, and the thickness is 0.7. Mm. In the pressure sensor, the metal film 50 becomes longer as the temperature of use of the sensor increases due to thermal expansion and contraction of the metal, forcing the deformation of the pressure sensitive film 202 on the silicon cup 20 to cause a larger output signal. Increase, thereby canceling each other or reducing the problem of a decrease in output signal due to an increase in the operating temperature of the sensor.
在本发明中，有时根据工艺要求，需要实现腔体与压力介质隔离。在本实施例中，该压力传感器还可以包括密封片（图中未示），该密封片可为玻璃密封片或硅密封片。密封片以玻璃片为例，可采用真空环境下的键合工艺使密封片与硅杯下方封接在一起，也即是与硅杯的支撑架相连接。此结构也为本领域技术人员所知晓的常用技术，在此不再赘述。In the present invention, it is sometimes necessary to isolate the cavity from the pressure medium in accordance with the process requirements. In this embodiment, the pressure sensor may further include a sealing sheet (not shown), which may be a glass sealing sheet or a silicon sealing sheet. The sealing sheet is exemplified by a glass sheet, and the sealing sheet can be sealed with the underside of the silicon cup by a bonding process in a vacuum environment, that is, connected to the support frame of the silicon cup. This structure is also a common technique known to those skilled in the art and will not be described herein.
上述实施例所述压力传感器涉及到的一般工艺流程具体说明如下：第一、在双面抛光的单晶硅衬底的下表面淀积由LPTOES和SiN组成的掩膜层（图中未示）；第二、通过对单晶硅衬底进行P型低浓度掺杂得到压敏电阻30，继续在压敏电阻30两端进行P型高浓度掺杂得到电阻引出端301；第三、根据器件使用需要，对单晶硅衬底进行N型高浓度掺杂得到衬底引出端22；第四、在单晶硅衬底的正面氧化生长二氧化硅层（或氮化硅层）和金属Al层，其中所述二氧化硅层为绝缘层，所述金属Al层一部分形成金属引线，另一部分形成金属膜；第五、采用温度恒定在80℃，浓度为25%TAMH的溶液腐蚀单晶硅衬底背面，最终形成所述硅杯20，其硅杯20背面呈一腔体21；第六、可根据工艺要求以及器件的使用不同通过键合工艺将与硅杯长度相同地密封片封接在硅杯20下方。The general process flow involved in the pressure sensor described in the above embodiment is specifically described as follows: First, a mask layer composed of LPTOES and SiN is deposited on the lower surface of the double-sided polished single crystal silicon substrate (not shown). Secondly, the varistor 30 is obtained by performing P-type low concentration doping on the single crystal silicon substrate, and the P-type high concentration doping is further performed on both ends of the varistor 30 to obtain the resistance terminal 301. Third, according to the device The N-type high concentration doping is performed on the single crystal silicon substrate to obtain the substrate lead-out end 22; fourth, the silicon oxide layer (or silicon nitride layer) and the metal Al are grown on the front side of the single crystal silicon substrate. a layer, wherein the silicon dioxide layer is an insulating layer, a part of the metal Al layer forms a metal lead, and another part forms a metal film; and fifth, the single crystal silicon is etched by a solution having a constant temperature of 80 ° C and a concentration of 25% TAMH The back surface of the substrate finally forms the silicon cup 20, and the back surface of the silicon cup 20 is a cavity 21; sixthly, the sealing sheet can be sealed with the same length as the silicon cup by a bonding process according to the process requirements and the use of the device. Below the silicon cup 20.
该压力传感器利用金属具有热胀冷缩的特性，在感压膜上方放置金属膜，通过金属膜在温度升高时变长，可以迫使硅杯上感压膜发生更大变形从而来抵消或减少因使用温度升高使传感器输出信号减小的问题。The pressure sensor utilizes the characteristic that the metal has thermal expansion and contraction, and a metal film is placed above the pressure sensitive film, and the metal film becomes longer when the temperature rises, and the pressure sensitive film on the silicon cup can be forced to be more deformed to offset or reduce. The problem of reducing the sensor output signal due to the increase in temperature.
以上例子主要说明了本发明的压力传感器。尽管只对其中一些本发明的实施方式进行了描述，但是本领域普通技术人员应当了解，本发明可以在不偏离其主旨与范围内以许多其他的形式实施。因此，所展示的例子与实施方式被视为示意性的而非限制性的，在不脱离如所附各权利要求所定义的本发明精神及范围的情况下，本发明可能涵盖各种的修改与替换。The above examples mainly illustrate the pressure sensor of the present invention. Although only a few of the embodiments of the present invention have been described, it will be understood by those skilled in the art that the invention may be practiced in many other forms without departing from the spirit and scope of the invention. Accordingly, the present invention is to be construed as illustrative and not restrictive, and the invention may cover various modifications without departing from the spirit and scope of the invention as defined by the appended claims With replacement.

Claims (10)

  1. 一种压力传感器，其特征在于，该压力传感器包括硅杯、压敏电阻、绝缘层和金属膜；其中，所述硅杯包括感压膜和支撑架；所述压敏电阻位于该硅杯的感压膜边界内；所述绝缘层覆盖于所述硅杯上表面；所述金属膜位于所述感压膜上方。A pressure sensor comprising a silicon cup, a varistor, an insulating layer and a metal film; wherein the silicon cup comprises a pressure sensitive film and a support frame; the varistor is located in the silicon cup Within the boundary of the pressure sensitive film; the insulating layer covers the upper surface of the silicon cup; the metal film is located above the pressure sensitive film.
  2. 根据权利要求1所述的压力传感器，其特征在于，所述金属膜是圆形或多边形。The pressure sensor according to claim 1, wherein the metal film is circular or polygonal.
  3. 根据权利要求1所述的压力传感器，其特征在于，所述金属膜是矩形。The pressure sensor according to claim 1, wherein the metal film is rectangular.
  4. 根据权利要求1所述的压力传感器，其特征在于，所述金属膜的材料选自Al、Au、Ti、Cu中的一种或多种。The pressure sensor according to claim 1, wherein the material of the metal film is one or more selected from the group consisting of Al, Au, Ti, and Cu.
  5. 根据权利要求1所述的压力传感器，其特征在于，所述金属膜设置于所述绝缘层之上，由所述绝缘层将其与所述感压膜隔开。The pressure sensor according to claim 1, wherein said metal film is provided on said insulating layer, and said insulating layer separates said pressure sensitive film.
  6. 根据权利要求1所述的压力传感器，其特征在于，所述绝缘层的材料为二氧化硅或氮化硅。The pressure sensor according to claim 1, wherein the material of the insulating layer is silicon dioxide or silicon nitride.
  7. 根据权利要求1所述的压力传感器，其特征在于，所述压敏电阻介于所述感压膜与所述绝缘层之间，由位于所述压敏电阻两端的电阻引出端引出。The pressure sensor according to claim 1, wherein the varistor is interposed between the pressure sensitive film and the insulating layer, and is led out by a resistance terminal located at both ends of the varistor.
  8. 根据权利要求1所述的压力传感器，其特征在于，所述硅杯还设有衬底引出端，该衬底引出端位于所述硅杯的支撑架上方。The pressure sensor according to claim 1, wherein said silicon cup is further provided with a substrate leading end, said substrate leading end being located above said support frame of said silicon cup.
  9. 根据权利要求1所述的压力传感器，其特征在于，所述压力传感器还包括与所述硅杯下方通过键合封接工艺连接在一起的密封片。The pressure sensor of claim 1 wherein said pressure sensor further comprises a sealing sheet joined to said silicon cup by a bonding sealing process.
  10. 根据权利要求9所述的压力传感器，其特征在于，所述密封片材料为玻璃片或单晶硅片。The pressure sensor according to claim 9, wherein the sealing sheet material is a glass piece or a single crystal silicon piece.
PCT/CN2013/082640 2012-10-18 2013-08-30 Pressure sensor WO2014059833A1 (en)

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