WO2014055445A1 - Methods, devices and systems for physical-to-logical mapping in solid state drives - Google Patents
Methods, devices and systems for physical-to-logical mapping in solid state drives Download PDFInfo
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- WO2014055445A1 WO2014055445A1 PCT/US2013/062723 US2013062723W WO2014055445A1 WO 2014055445 A1 WO2014055445 A1 WO 2014055445A1 US 2013062723 W US2013062723 W US 2013062723W WO 2014055445 A1 WO2014055445 A1 WO 2014055445A1
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/72—Details relating to flash memory management
- G06F2212/7201—Logical to physical mapping or translation of blocks or pages
Definitions
- SSDs solid state drives
- a page in an SSD is typically 8- 16 kilobytes (KB) in size and a block consists of a large number of pages (e.g., 256 or 512).
- KB kilobytes
- a particular physical location in an SSD e.g., a page
- address indirection is needed.
- L2P mapping system known as Logical Block Addressing (LBA) that is part of the flash translation layer (FTL).
- LBA Logical Block Addressing
- a large L2P map table maps logical entries to physical address locations on an SSD.
- This large L2P map table which may reside in a volatile memory such as dynamic random access memory (DRAM), is usually updated as writes come in, and saved to non-volatile memory in small sections. For example, if random writing occurs, although the system may have to update only one entry, it may nonetheless have to save to the non-volatile memory the entire table or a portion thereof, including entries that have not been updated, which is inherently inefficient.
- DRAM dynamic random access memory
- Fig. 1 shows aspects of a conventional Logical Block Addressing (LBA) scheme for an SSD.
- LBA Logical Block Addressing
- a map table 104 contains one entry for every logical block 102 defined for the data storage device’s flash memory 106.
- flash memory 106 For example, a 64 GB SSD that supports 512 byte logical blocks may present itself to the host as having 125,000,000 logical blocks.
- One entry in the map table 104 contains the current location of each of the 125,000,000 logical blocks in the flash memory 106.
- a flash page holds an integer number of logical blocks (i.e., a logical block does not span across flash pages). In this conventional example, an 8 KB flash page would hold 16 logical blocks (of size 512 bytes).
- each entry in the logical-to-physical map table 104 contains a field 108 identifying the flash die on which the logical block is stored, a field 110 identifying the flash block on which the logical block is stored, another field 112 identifying the flash page within the flash block and a field 114 identifying the offset within the flash page that identifies where the logical block data begins in the identified flash page.
- the large size of the map table 104 prevents the table from being held inside the SSD controller. Conventionally, the large map table 104 is held in an external DRAM connected to the SSD controller. As the map table 104 is stored in volatile DRAM, it must be restored when the SSD powers up, which can take a long time, due to the large size of the table.
- the corresponding entry in the map table 104 is read to determine the location in flash memory to be read. A read is then performed to the flash page specified in the corresponding entry in the map table 104. When the read data is available for the flash page, the data at the offset specified by the map entry is transferred from the SSD to the host. When a logical block is written, the corresponding entry in the map table 104 is updated to reflect the new location of the logical block.
- the flash memory when a logical block is written, the flash memory will initially contain at least two versions of the logical block; namely, the valid, most recently written version (pointed to by the map table 104) and at least one other, older version thereof that is stale and is no longer pointed to by any entry in the map table 104.
- These“stale” data are referred to as garbage, which occupies space that must be accounted for, collected, erased and made available for future use.
- Fig. 1 shows aspects of a conventional Logical Block Addressing (LBA) scheme for SSDs.
- LBA Logical Block Addressing
- FIG. 2 is a diagram showing aspects of the physical and logical data organization of a data storage device according to one embodiment.
- FIG. 3 shows a logical-to-physical address translation map and illustrative entries thereof, according to one embodiment.
- FIG. 4 shows aspects of a method for updating a logical-to-physical address translation map and for creating an S-Journal entry, according to one embodiment.
- FIG. 5 is a block diagram of an S-Journal, according to one embodiment.
- Fig. 6 shows an exemplary organization of one entry of an S-Journal, according to one embodiment.
- Fig. 7 is a block diagram of a superblock (S-Block), according to one embodiment.
- Fig. 8 shows another view of a super page (S-Page), according to one embodiment.
- Fig. 9A shows relationships among the logical-to-physical address translation map, S-Journals and S-Blocks, according to one embodiment.
- Fig. 9B is a block diagram of an S-Journal Map, according to one embodiment.
- FIG. 10 is a block diagram illustrating aspects of a method of updating the logical-to-physical address translation map, according to one embodiment.
- FIG. 11 is a block diagram illustrating further aspects of a method of updating the logical-to-physical address translation map, according to one embodiment.
- FIG. 12 is a block diagram illustrating still further aspects of a method of updating the logical-to-physical address translation map, according to one embodiment.
- FIG. 13 is a block diagram illustrating yet further aspects of a method of updating the logical-to-physical address translation map, according to one embodiment.
- Fig. 14 is a block diagram illustrating aspects of a method of updating S- Journals and the S-Journal Map, according to one embodiment.
- Fig. 15 is a block diagram illustrating further aspects of a method of updating S-Journals and the S-Journal Map, according to one embodiment.
- Fig. 16 is a block diagram illustrating still further aspects of a method of updating S-Journals and the S-Journal Map, according to one embodiment.
- Fig. 17 is a block diagram illustrating yet further aspects of a method of updating S-Journals and the S-Journal Map, according to one embodiment.
- Fig. 18 is a block diagram illustrating aspects of garbage collection, according to one embodiment.
- FIG. 19 is a block diagram illustrating further aspects of garbage collection, according to one embodiment.
- FIG. 20 is a block diagram illustrating still further aspects of garbage collection, according to one embodiment.
- FIG. 21 is a block diagram illustrating yet further aspects of garbage collection, according to one embodiment.
- Fig. 22 is a block diagram illustrating aspects of garbage collecting a system block, according to one embodiment.
- FIG. 23 is a block diagram illustrating further aspects of garbage collecting a system block, according to one embodiment.
- FIG. 24 is a block diagram illustrating still further aspects of garbage collecting a system block, according to one embodiment.
- Fig. 25 is a block diagram illustrating other aspects of garbage collecting a system block, according to one embodiment.
- FIG. 26 is a block diagram illustrating still other aspects of garbage collecting a system block, according to one embodiment.
- Fig. 2 is a diagram showing aspects of the physical and logical data organization of a data storage device according to one embodiment.
- the data storage device is an SSD.
- the data storage device is a hybrid drive including flash memory and rotating magnetic storage media.
- the disclosure is applicable to both SSD and hybrid implementations, but for the sake of simplicity the various embodiments are described with reference to SSD- based implementations.
- a data storage device controller 202 may be configured to be coupled to a host, as shown at reference numeral 218.
- the host 218 may utilize a logical block addressing (LBA) scheme. While the LBA size is normally fixed, the host can vary the size of the LBA dynamically. For example, the LBA size may vary by interface and interface mode.
- LBA logical block addressing
- the data storage device controller 202 may comprise or be coupled to a page register 204.
- the page register 204 may be configured to enable the controller 202 to read data from and store data to the data storage device.
- the controller 202 may be configured to program and read data from an array of flash memory devices responsive to data access commands from the host 218.
- the array of memory devices may comprise one or more of various types of non-volatile memory devices such as flash integrated circuits, Chalcogenide RAM (C-RAM), Phase Change Memory (PC-RAM or PRAM), Programmable Metallization Cell RAM (PMC- RAM or PMCm), Ovonic Unified Memory (OUM), Resistance RAM (RRAM), NAND memory (e.g., single-level cell (SLC) memory, multi-level cell (MLC) memory, or any combination thereof), NOR memory, EEPROM, Ferroelectric Memory (FeRAM), Magnetoresistive RAM (MRAM), other discrete NVM (non-volatile memory) chips, or any combination thereof.
- flash integrated circuits e.g., Intel® 845555B Intel® 845555B Intel® 845555B Intel® 845555B Intel® 845555B Intel® 845555B Intel® 845555B Intel® 845555B Intel® 845555B Intel® 845555B Intel® 845555B Intel® 845555B Intel® 845555B Intel
- the page register 204 may be configured to enable the controller 202 to read data from and store data to the array.
- the array of flash memory devices may comprise a plurality of non-volatile memory devices in die (e.g., 128 dies), each of which comprises a plurality of blocks, such as shown at 206 in Fig. 2.
- Other page registers 204 may be coupled to blocks on other die.
- a combination of flash blocks, grouped together, may be called a Superblock or S-Block.
- the individual blocks that form an S-Block may be chosen from one or more dies, planes or other levels of granularity.
- An S-Block may comprise a plurality of flash blocks, spread across one or more die, that are combined together.
- the S-Block may form a unit on which the Flash Management System (FMS) operates.
- the individual blocks that form an S- Block may be chosen according to a different granularity than at the die level, such as the case when the memory devices include dies that are sub-divided into structures such as planes (i.e., blocks may be taken from individual planes).
- allocation, erasure and garbage collection may be carried out at the S- Block level.
- the FMS may perform data operations according to other logical groupings such as pages, blocks, planes, dies, etc.
- each of the flash blocks 206 comprises a plurality of flash pages (F- Pages) 208.
- Each F-Page may be of a fixed size such as, for example, 16 KB.
- the F- Page is the size of the minimum unit of program for a given flash device.
- each F-Page 208 may be configured to accommodate a plurality of physical pages, hereinafter referred to as E-Pages 210.
- E-Page refers to a data structure stored in flash memory on which an error correcting code (ECC) has been applied.
- E-Page 210 may form the basis for physical addressing within the data storage device and may constitute the minimum unit of flash read data transfer.
- the E-Page 210 may be (but need not be) of a predetermined fixed size (such as 2 KB, for example) and determine the size of the payload (e.g., host data) of the ECC system.
- each F-Page 208 may be configured to fit a predetermined plurality of E- Pages 210 within its boundaries. For example, given 16 KB size F-Pages 208 and a fixed size of 2 KB per E-Page 210, eight E-Pages 210 fit within a single F-Page 208, as shown in Fig. 2.
- a power of 2 multiple of E- Pages 210, including ECC may be configured to fit into an F-Page 208.
- Each E-Page 210 may comprise a data portion 214 and, depending on where the E-Page 210 is located, may also comprise an ECC portion 216. Neither the data portion 214 nor the ECC portion 216 need be fixed in size.
- the address of an E-Page uniquely identifies the location of the E-Page within the flash memory. For example, the E-Page’s address may specify the flash channel, a particular die within the identified flash channel, a particular block within the die, a particular F-Page and, finally, the E-Page within the identified F-Page.
- L-Page logical page
- An L- Page denoted in Fig. 2 at reference numeral 212 may comprise the minimum unit of address translation used by the FMS.
- Each L-Page may be associated with an L-Page number.
- the L-Page numbers of L-Pages 212 therefore, may be configured to enable the controller 202 to logically reference host data stored in one or more of the physical pages, such as the E-Pages 210.
- the L- Page 212 may also be utilized as the basic unit of compression.
- L-Pages 212 are not fixed in size and may vary in size, due to variability in the compression of data to be stored. Since the compressibility of data varies, a 4 KB amount of data of one type may be compressed into a 2 KB L-Page while a 4 KB amount of data of a different type may be compressed into a 1 KB L-Page, for example. Due to such compression, therefore, the size of L-Pages may vary within a range defined by a minimum compressed size of, for example, 24 bytes to a maximum uncompressed size of, for example, 4 KB or 4 KB+. Other sizes and ranges may be implemented. As shown in Fig.
- L-Pages 212 need not be aligned with the boundaries of E-Page 210. Indeed, L-Pages 212 may be configured to have a starting address that is aligned with an F-Page 208 and/or E-Page 210 boundary, but also may be configured to be unaligned with either of the boundaries of an F-Page 208 or E-Page 210. That is, an L-Page starting address may be located at a non-zero offset from either the start or ending addresses of the F-Pages 208 or the start or ending addresses of the E-Pages 210, as shown in Fig. 2.
- L-Pages 212 are not fixed in size and may be smaller than the fixed-size E-Pages 210, more than one L-Page 212 may fit within a single E-Page 210. Similarly, as the L-Pages 212 may be larger in size than the E-Pages 210, L-Pages 212 may span more than one E-Page, and may even cross the boundaries of F-Pages 210, shown in Fig. 2 at numeral 217.
- LBA size is 512 or 512+ bytes
- a maximum of, for example, eight sequential LBAs may be packed into a 4 KB L-Page 212, given that an uncompressed L-Page 212 may be 4 KB to 4 KB+.
- the exact logical size of an L-Page 212 is unimportant as, after compression, the physical size may span from few bytes at minimum size to thousands of bytes at full size. For example, for 4 TB SSD device, 30 bits of addressing may be used to address each L-Page 212 to cover for an amount of L-Pages that could potentially be present in such a SSD.
- Fig. 3 shows a logical-to-physical address translation map and illustrative entries thereof, according to one embodiment.
- a logical-to-physical address translation map is required to enable the controller 202 to associate an L-Page number of an L-Page 212 to one or more E-Pages 210.
- Such a logical-to-physical address translation map is shown in Fig. 3 at 302 and, in one embodiment, is a linear array having one entry per L-Page 212.
- Such a logical-to-physical address translation map 302 may be stored in a volatile memory, such as a DRAM or SRAM.
- Fig. 3 also shows the entries in the logical-to- physical address translation map for four different L-Pages 212, which L-Pages 212 in Fig. 3 are associated with L-Page numbers denoted as L-Page 1 , L-Page 2, L-Page 3 and L-Page 4.
- each L-Page stored in the data storage device may be pointed to by a single and unique entry in the logical-to-physical address translation map 302. Accordingly, in the example being developed herewith, four entries are shown.
- each entry in the map 302 may comprise an L- Page number, which may comprise an identification of the physical page (e.g., E-Page) containing the start address of the L-Page being referenced, the offset of the start address within the physical page (e.g., E-Page) and the length of the L-Page.
- a plurality of ECC bits may provide error correction functionality for the map entry. For example, and as shown in Fig. 3, and assuming an E-Page size of 2 KB, L- Page 1 may be referenced in the logical-to-physical address translation map 302 as follows: E-Page 1003, offset 800, length 1624, followed by a predetermined number of ECC bits (not shown).
- the start of L-Page 1 is within (not aligned with) E-Page 1003, and is located at an offset from the starting physical location of the E-Page 1003 that is equal to 800 bytes.
- Compressed L-Page 1 furthermore, extends 1 ,624 bytes, thereby crossing an E-Page boundary to E-Page 1004. Therefore, E-Pages 1003 and 1004 each store a portion of the L-Page 212 denoted by L-Page number L-Page 1.
- the compressed L-Page referenced by L-Page number L-Page 2 is stored entirely within E-Page 1004, and begins at an offset therein of 400 bytes and extends only 696 bytes within E-Page 1004.
- the compressed L-Page associated with L-Page number L-Page 3 starts within E-Page 1004 at an offset of 1 ,120 bytes (just 24 bytes away from the boundary of L-Page 2) and extends 4,096 bytes past E-Page 1005 and into E-Page 1006. Therefore, the L-Page associated with L-Page number L-Page 3 spans a portion of E-Page 1004, all of E-Page 1005 and a portion of E-Page 1006.
- L-Page associated with L-Page number L-Page 4 begins within E-Page 1006 at an offset of 1 ,144 bytes, and extends 3,128 bytes to fully span E-Page 1007, crossing an F-Page boundary into E-Page 1008 of the next F-Page.
- each of these constituent identifier fields (E-Page, offset, length and ECC) making up each entry of the logical-to-physical address translation map 302 may be, for example, 8 bytes in size. That is, for an exemplary 4 TB drive, the address of the E-Page may be 32 bits in size, the offset may be 12 bits (for E-Page data portions up to 4 KB) in size, the length may be 10 bits in size and the ECC field may be provided. Other organizations and bit-widths are possible. Such an 8 byte entry may be created each time an L-Page is written or modified, to enable the controller 202 to keep track of the host data, written in L-Pages, within the flash storage.
- This 8-byte entry in the logical-to-physical address translation map may be indexed by an L-Page number of LPN.
- the L-Page number functions as an index into the logical-to-physical address translation map 302.
- the LBA is the same as the LPN.
- the LPN therefore, may constitute the address of the entry within the volatile memory.
- the controller 202 receives a read command from the host 218, the LPN may be derived from the supplied LBA and used to index into the logical-to-physical address translation map 302 to extract the location of the data to be read in the flash memory.
- the LPN When the controller 202 receives a write command from the host, the LPN may be constructed from the LBA and the logical-to-physical address translation map 302 may be modified. For example, a new entry therein may be created. Depending upon the size of the volatile memory storing the logical-to-physical address translation map 302, the LPN may be stored in a single entry or broken into, for example, a first entry identifying the E-Page containing the starting address of the L-Page in question (plus ECC bits) and a second entry identifying the offset and length (plus ECC bits). According to one embodiment, therefore, these two entries may together correspond and point to a single L-Page within the flash memory. In other embodiments, the specific format of the logical-to-physical address translation map entries may be different from the examples shown above.
- the logical-to-physical address translation map 302 may be stored in a volatile memory, it may need to be rebuilt upon startup or any other loss of power to the volatile memory. This, therefore, requires some mechanism and information to be stored in a non-volatile memory that will enable the controller 202 to reconstruct the logical-to-physical address translation map 302 before the controller can“know” where the L-Pages are stored in the non-volatile memory after startup or after a power-fail event. According to one embodiment, such mechanism and information are embodied in a construct that may be called a System Journal, or S-Journal.
- the controller 202 may be configured to maintain, in the plurality of non- volatile memory devices (e.g., in one or more of the blocks 206 in one or more die, channel or plane), a plurality of S-Journals defining physical-to-logical address correspondences.
- each S-Journal covers a pre- determined range of physical pages (e.g., E-Pages).
- each S-Journal may comprise a plurality of journal entries, with each entry being configured to associate one or more physical pages, such as E-Pages, to the L-Page number of each L-Page.
- Fig. 4 shows aspects of a method for updating a logical-to-physical address translation map and for creating an S-Journal entry, according to one embodiment.
- the logical-to-physical address translation map 302 may be updated as shown at B42.
- an S-Journal entry may also be created, storing therein information pointing to the location of the updated L-Page.
- both the logical-to- physical address translation map 302 and the S-Journals are updated when new writes occur (e.g., as the host issues writes to non-volatile memory, as garbage collection/wear leveling occurs, etc.).
- Write operations to the non-volatile memory devices to maintain a power-safe copy of address translation data may be configured, therefore, to be triggered by newly created journal entries (which may be just a few bytes in size) instead of re-saving all or a portion of the logical-to-physical address translation map, such that Write Amplification (WA) is reduced.
- WA Write Amplification
- the updating of the S- Journals ensures that the controller 202 can access a newly updated L-Page and that the logical-to-physical address translation map 302 may be reconstructed upon restart or other information-erasing power event affecting the volatile memory in which the logical-to-physical address translation map is stored.
- the S-Journals are useful in enabling effective Garbage Collection (GC). Indeed, the S-Journals may contain the last-in-time update to all L-Page numbers, and also may contain stale entries, entries that do not point to a valid L-Page.
- the S-Journals may be the main flash management data written to the non-volatile memory.
- S-Journals may contain mapping information for a given S-Block and may contain the Physical-to-Logical (P2L) information for a given S-Block.
- Fig. 5 is a block diagram showing aspects of an S- Journal, according to one embodiment. As shown therein, each S-Journal 502 covers a predetermined physical region of the non-volatile memory such as, for example, 32 E- Pages as shown at 506, which are addressable using 5 bits.
- Each S-Journal 502 may be identified by an S-Journal Number, which may be part of a header 504 that could include other information about the S-Journal.
- the S-Journal Number may comprise a portion of the address of the first physical page covered by the S-Journal.
- the S-Journal Number of S-Journal 502 may comprise, for example, the 27 Most Significant Bits (MSb) of the first E-Page address covered by this S-Journal 502.
- Fig. 6 shows an exemplary organization of one entry 602 of an S-Journal 502, according to one embodiment.
- Each entry 602 of the S-Journal 502 may point to the starting address of one L-Page, which is physically addressed in E-Pages.
- Each entry 602 may comprise, for example, a number (5, for example) of Least Significant Bits (LSbs) of the address of the E-Page containing the start L-Page. The full E-Page address is obtained by concatenating these 5 LSbs with the 27 MSbs of the S-Journal Number in the header 504.
- the entry 602 may comprise the L-Page number, its offset within the identified E-Page and its size.
- each entry 602 of an S-Journal may comprise the 5 LSbs of the address of first E-Page covered by this S-Journal entry, 30 bits of L-Page number, 9 bits of E-Page offset and 10 bits of L-Page size, adding up to an overall size of about 7 bytes.
- Various other internal journal entry formats may be used in other embodiments.
- a variable number of L-Pages may be stored in a physical area, such as a physical area equal to 32 E-Pages, as shown at 506.
- S-Journals may comprise a variable number of entries.
- an L-Page may be 24 bytes in size and an S-Journal may comprise over 2,500 entries, referencing an equal number of L-Pages, one L-Page per S-Journal entry 602.
- an S-Journal may be configured to contain mapping information for a given S-Block. More precisely, according to one embodiment, S- Journals contain the mapping information for a predetermined range of E-Pages within a given S-Block.
- Fig. 7 is a block diagram of a S-Block, according to one embodiment. As shown therein, an S-Block 702 may comprise one flash block (F-Block) 704 (as also shown at 206 in Fig. 2) per die. An S-Block, therefore, may be thought of as a collection of F-Blocks, one F-Block per die, that are combined together to form a unit of the Flash Management System.
- F-Block flash block
- allocation, erasure and GC may be managed at the S-Block level.
- Each F-Block 704, as shown in Fig. 7, may comprise a plurality of flash pages (F-Page) such as, for example, 256 or 512 F-Pages.
- An F- Page may be the size of the minimum unit of program for a given non-volatile memory device.
- Fig. 8 shows a super page (S-Page), according to one embodiment.
- an S-Page 802 may comprise one F-Page per F-Block of an S-Block, meaning that an S-Page spans across an entire S-Block.
- Fig. 9A shows relationships among the logical-to-physical address translation map, the S-Journal map and S-Blocks, according to one embodiment.
- Reference 902 denotes an entry in the logical-to-physical address translation map (stored in DRAM in one embodiment).
- the logical-to-physical address translation map may be indexed by L-Page number, in that there may be one entry 902 per L-Page in the logical-to-physical address translation map.
- the physical address of the start of the L-Page in the flash memory and the size thereof may be given in the map entry 902; namely by E-Page address, offset within the E-Page and the size of the L-Page.
- the L-Page depending upon its size, may span one or more E-Pages and may span F-Pages and F-Blocks as well.
- the volatile memory may also store a System Journal (S-Journal) map.
- S-Journal System Journal
- An entry 904 in the S-Journal map stores information related to where an S-Journal is physically located in the non-volatile memory. For example, the 27 MSbs of the E-Page physical address where the start of the L-Page is stored may constitute the S-Journal Number (as previously shown in Fig. 5).
- the S-Journal map entry 904 in the volatile memory may also include the address of the S-Journal in non-volatile memory, referenced in system E-Pages.
- System S-Block Information 908 may be extracted.
- the System S-Block Information 908 may be indexed by System S-Block (S-Block in the System Band) and may comprise, among other information regarding the S-Block, the size of any free or used space in the System S-Block.
- the physical location (expressed in terms of E-Pages in the System Band) of the referenced S-Journal in non-volatile memory 910 may be extracted.
- the System Band does not contain L-Page data and may contain File Management System (FMS) meta-data and information.
- the System Band may be configured as lower page only for reliability and power fail simplification. During normal operation, the System Band need not be read except during Garbage Collection.
- the System Band may be provided with significantly higher overprovisioning than the data band for overall WA optimization.
- Other bands include the Hot Band, which may contain L-Page data and is frequently updated, and the Cold Band, which may be less frequently updated and may comprise more static data, such as data that may have been collected as a result of GC.
- the System, Hot and Cold Bands may be allocated by an S-Block basis.
- each of these S-Journals in non-volatile memory may comprise a collection of S-Journal entries and cover, for example, 32 E-Pages worth of data.
- These S-Journals in non-volatile memory 910 enable the controller 202 to rebuild not only the logical-to-physical address translation map in volatile memory, but also the S-Journal map, the User S-Block Information 906, and the System S-Block Information 908, in volatile memory.
- Fig. 9B is a block diagram of an S-Journal Map 912, according to one embodiment.
- the S-Journal Map 912 may be indexed by S-Block number and each entry thereof may point to the start of the first S-Journal for that S-Block which, in turn, may cover a predetermined number of E-Pages (e.g., 32) of that S-Block.
- the controller 202 may be further configured to build or rebuild a map of the S-Journals and store the resulting S-Journal Map in volatile memory.
- the controller 202 may read the plurality of S-Journals in a predetermined sequential order, build a map of the S-Journals stored in the non-volatile memory devices based upon the sequentially read plurality of S-Journals, and store the built S- Journal Map 912 in the volatile memory.
- Figs. 10-13 are block diagrams illustrating aspects of a method of updating the logical-to-physical address translation map, according to one embodiment.
- a logical-to-physical address translation map 1002 contains an entry (e.g., a location of an L-Page) for L-Page 100, which has a length of 3,012 bytes.
- L-Page 100 is stored in S-Block 15, as shown at 1006.
- a buffer 1004 (such as a static random access memory (SRAM)) in or coupled to the controller 202 may store the S-Journal that contains the P2L information for S-Block 15 in which the L-Page 100 resides.
- SRAM static random access memory
- the User S-Block Info 906, whose entries are indexed by S-Block, may comprise for each S-Block, among other information regarding the S-Block, the (e.g., exact or approximate) size of the free or used space in the S-Block. As shown in Fig. 10, the entry in the User S-Block Info 906 for S-Block 15 is shown. Fig. 10 shows an illustrative state of these constituent functional blocks before an update to L-Page 100 is processed by the controller 202.
- an updated L-Page 100 is received, with a new length of 1 ,534 bytes.
- the L- Page 100 information may be fetched from the logical-to-physical address translation map 1002 and the length (3,012 bytes) of the (now obsolete) L-Page 100 may be extracted therefrom and used to correspondingly and precisely increase the tracked free space value of S-Block 15.
- the User S-Block Information 906 may be updated with data indicating that S-Block 15 now has 3,012 additional bytes of free space, now that the original data for L-Page 100 is now stale (e.g., obsolete).
- the logical-to-physical address translation map 1002 may be updated to accommodate the updated L-Page.
- the length information is now 1 ,534 bytes.
- the S-Journal in the buffer 1004 for the particular portion of S-Block 15 where the update occurs may now be updated with the new L-Page information, including length information and the L-Page newly received from, for example, a compressor may be read into the buffer 1004.
- the entry for L-Page 100 in the logical-to-physical address translation map 1002 may temporarily reflect its location in the buffer, as shown by the arrow labeled“1”.
- the updated L-Page 100 may be flushed to the Hot S-Block 1008, at the E-Page address specified by the newly-created entry in the now updated S- Journal still in the buffer 1004.
- the mapping table entry in the logical-to-physical address translation map 1002 is updated to reflect the physical E-Page address and offset of the L-Page’s final destination, as suggested by arrow“2”.
- the S-Journal in the volatile memory buffer 1004 may be written out to non-volatile memory, such as to the System S-Block 1010.
- the System S-Block 1010 may be a portion of the flash memory allocated by the controller firmware to store S-Journals. The saving of the S-Journal in non-volatile memory enables the later reconstruction of the logical-to-physical address translation map, as needed.
- Figs. 14-17 are block diagrams illustrating aspects of a method of updating S- Journals and the S-Journal Map in the System Band, according to one embodiment.
- the figures illustrate additional details relating to the update mechanisms of S-Journal triggered by the same example update to L-Page 100.
- an S-Journal Map 1402 in volatile memory e.g., synchronous dynamic random-access memory (SDRAM)
- SDRAM synchronous dynamic random-access memory
- the relevant S-Journal i.e., S-Journal for a particular portion of S-Block 15 storing L-Page 100
- System S-Block 3 at 1408, starting at E-Page 42.
- L-Page 100 is updated, with a length of 1 ,534 bytes.
- the information e.g., E-Page address, offset and length
- the address of the E-Page storing L-Page 100 may be used to extract the S-Journal Number used to locate the S-Journal entry within the S-Journal Map 1402.
- the S-Journal Number may comprise the 27 MSbs of the first 32-bit E-Page address.
- This S-Journal number may then be used to index into the S-Journal Map 1402 to obtain the location, which may then be used to identify the System S-Block that contains the S-Journal of interest.
- the System S-Block Information 908 may be updated to reflect the fact that the journal entry for L-Page 100 in the S-Journal at S- Block 3 is now invalid, as the space previously occupied by that entry has now been de- allocated, in view of the recent update to L-Page 100. That de-allocated space is now free space, and must be accounted for. Alternatively, used space may be accounted for and the free space derived therefrom.
- the entry in the System S-Block information 908 for S-Block 3 may, therefore, be incremented by a space taken by one S-Journal entry; namely, 7 bytes in the exemplary implementation being developed herein. This empty space may thereafter be taken into account during GC of the System Band.
- L-Page 100 may then be written to the buffer 1004, as shown at 1005, whereupon the logical-to-physical address translation map 1002 may be updated to point to the buffer 1004 (indicating the physical location where L-Page 100 is stored) and to store the length of the updated L-Page 100 (1 ,534 in the example being developed herein).
- System S-Block 3 still includes an S-Journal entry that points to S-Block 15 at reference 1006 as containing L-Page 100.
- the System S-Block Info for S-Block 3 has been updated so as to indicate that the space presently occupied by the now outdated S-Journal entry within the System S- Block 3 at reference 1408 is, in fact, free space.
- Fig. 16 also shows a different S-Journal in the buffer.
- the S-Journal in the buffer 1004 is for recording new L-Pages written to the Open Hot S- Block 7.
- the S-Journal in the buffer 1004 (which has not yet been flushed to the non-volatile memory) is updated with the L-Page number of updated L- Page 100 (now in the buffer also) and its length information, as indicated by the arrow at 1007 in Fig. 16.
- L-Page 100 may now be flushed from the buffer 1004 to the currently open Hot S-Block 7, as referenced at 1404 in Fig. 16.
- the S-Journal in the buffer is updated to reflect that updated L-Page 100 has been written to the non-volatile memory.
- the logical-to-physical address translation map 1002 and the S- Journal may be updated with the address of the updated L-Page 100 prior to the updated L-Page 100 being written to the non-volatile memory.
- an updated entry in that S-Journal will contain the E-Page pointed to by the new L-Page 100’s entry in the logical-to-physical address translation map 1002 and additional information about L-Page 100, as previously shown in Fig. 6.
- the S-Journal in the buffer 1004 may be written out to an open System S-Block 1 (referenced at 1406).
- this S-Journal is written out to E-Page 19 of open System S-Block 1.
- the S-Journal Map 1402 now comprises one entry indicating that a portion of S-Block 15 is stored in System S-Block 3, E-Page 42. However, the entry within that S-Journal which pointed to the old location of L-Page 100 within S-Block 15 is no longer valid.
- the S- Journal Map 1402 also comprises one entry indicating that S-Journal for S-Block 7 is stored in System S-Block 1 , E-Page 19. That S-Journal includes a valid entry that points to open Hot S-Block 7 at 1404 as the location in non-volatile memory of the updated L-Page 100. In this manner, the S-Journals containing the P2L information are updated in the buffer 1004, and are eventually written out to non-volatile memory. In addition, the S-Journal Map 1402 may be suitably updated to point to such newly updated S-Journals. Moreover, the logical-to-physical address translation map 1002 may be suitably updated to point to the correct open Hot S-Block.
- the S-Journal construct as shown and described herein minimizes write overhead.
- a new write operation necessitates writing a new S-Journal entry in the non-volatile memory. Since there is only a small amount of S-Journal entry data per L-Page generated (e.g., 7 bytes as described herein), the WA due to system data writes is reduced as compared to conventional systems. S-Journal data is effectively a massive command history. Updated S-Journal data is pooled up and written out sequentially to the System Band.
- mapping information that is generated is the same as the data to be written, with no additional unchanged entries, as only that which is changed is written to non-volatile (e.g., flash) memory, as opposed to all or a portion of a logical-to-physical map.
- non-volatile e.g., flash
- all the S-Journal data in the System Band may be read and processed into DRAM to rebuild the logical-to-physical address translation map in volatile memory. According to one embodiment, this is done in the order in which the S- Blocks are allocated to the System Band.
- hardware support is used to enable this large data load to occur quickly to meet power-up timing requirement (this may not be practical without hardware, since this is essentially generating the logical-to-physical address translation map from the command history).
- an S-Journal Map is also constructed at power-up to point to valid S-Journals stored in the System Band.
- Figs. 18-21 are block diagrams illustrating aspects of garbage collection, according to one embodiment.
- the data in the User S-Block Information 906 may be scanned to select the“best” S-Block to garbage collect.
- the best S-Block to garbage collect may be that S-Block having the largest amount of free space and the lowest Program Erase (PE) count.
- PE Program Erase
- these and/or other criteria may be weighted to select the S-Block to be garbage collected.
- S-Block 15 is referenced by information entry 15 within the User S-Block Information 906, showing some amount + 3,012 bytes of free space (the additional 3,012 bytes to account for the recently obsoleted L-Page 100).
- the User S-Block Information 906 may comprise, among other items of information, a running count of the number of PE cycles undergone by each tracked S- Block, which may be evaluated in deciding which S-Block to garbage collect. As shown at 1006, S-Block 15 has a mix of valid data (hashed blocks) and invalid data (non- hashed blocks).
- the S-Journal Map (see 912 in Fig. 9B) may be consulted (e.g., indexed into by the S-Block number) to find the location in non-volatile memory (e.g., E-Page address) of the corresponding S-Journals for that S-Block.
- non-volatile memory e.g., E-Page address
- one S-Journal pointed to by the S-Journal Map 912 is located using the S-Journal Number (27 MSb of E-Page Address), and read into the buffer 1004, as shown in Fig. 18.
- the 1 or more E-Pages in the System S-Block 1804 pointed to by S-Journal Map 912 are accessed and the S-Journal stored beginning at that location may be read into the buffer 1004.
- the S- Journal map also contains the length of the S-Journal since an S-Journal may span one or more E-Pages.
- An S-Journal may be quite large and, therefore, may be read in pieces and processed as available.
- each P2L entry in the S-Journal in the buffer 1004 may then be compared to the corresponding entry in the logical-to-physical address translation map 1802. For each entry in the S-Journal in the buffer 1004, it may be determined whether the physical address for the L-Page of that entry matches the physical address of the same L-Page in the corresponding entry in the logical-to-physical address translation map 1802. If the two match, that entry in the S-Journal is valid. Conversely, if the address for the L-Page in the S-Journal does not match the entry for that L-Page in the logical-to-physical address translation map, that entry in the S-Journal is not valid.
- the referenced L-Pages may be read out of S-Block 15 and written to the buffer 1004, as shown in Fig. 19. The same process may be used for other S-Journals covering S-Block 15 until the entire S-Block is processed. As also shown in Fig. 19 at reference 1006, S-Block 15 now contains only invalid data. This is because the data indicated as valid by entries in S-Journals for S-Block 15 have been preserved and will soon be moved to a new S-Block.
- the valid data may then be written out to the Cold S- Block 1801 (the Hot S-Block being used for recently written host data, not garbage collected data), as shown at Fig. 20.
- S-Journal 1005 may be written out to the System S- Block 1804 in the System Band.
- S-Block 15 has now been garbage collected and User S-Block Info 906 now indicates that the entire S-Block 15 is free space.
- S-Block 15 may thereafter be erased, its PE count updated and made available for new writes. It is to be noted that an invalid S-Journal is still present in System S-Block 1804. The space in flash memory in the System Band occupied by this invalid S-Journal may be garbage collected at some later time.
- Figs. 22-26 are block diagrams illustrating aspects of garbage collecting a system block, according to one embodiment.
- System S-Block 3 shown at referenced 2208 in Fig. 22, has been picked for garbage collection.
- all of the E-pages (and by extension, all S-Journals contained therein) within the picked System S-Block may be read (sequentially or non-sequentially) into the buffer 1004.
- the S-Journal numbers for one or more of the S- Journals read into the buffer 1004 may then be extracted from the headers of the S- Journals. Each such System S-Journal number may then be used to look up in the S- Journal Map 2202 to determine whether the corresponding S-Journal is still valid. According to one embodiment, invalid S-Journals are those S-Journals whose S-Journal number is not matched by a corresponding entry in the S-Journal Map 2202, which has the most updated information on where S-Journals are physically stored.
- S-Journal Map 2202 For example, if the entry in the S-Journal Map 2202 for S-Journal Number“12345” points to an E- Page within System S-Block 120, the copy of S-Journal“12345” in S-Block 3 (the S- Block being garbage collected) is obsolete. Likewise, if the S-Journal Map entry instead points to the E-Page from S-Block 3 where S-Journal“12345” currently resides, S- Journal“12345” is still valid.
- a valid S-Journal being garbage collected may include a mix of valid and invalid entries, thus individual checking of the entries is needed.
- each entry in each valid S-Journal 2402 may then be matched with a corresponding entry in the logical-to-physical address translation map 1802 in memory. That is, the E-Page address of the L-Page referenced by each S-Journal entry may be compared with the E-Page address of the L-Page specified in the logical-to-physical address translation map 1802. If the two match, that S-Journal entry is valid.
- E-Page address and the offset within the E-Page in the S-Journal may be necessary to compare the E-Page address and the offset within the E-Page in the S-Journal with the E-Page address and the offset within the E- page of the L-Page specified in the logical-to-physical address translation map 1802. Conversely, if the E-page address (or E-page address and offset) for the L-Page in the S-Journal does not match the E-Page address (or E-page address and offset) in the entry for that L-Page in the address translation map 1802, that entry in the S-Journal is not valid.
- each S-Journal loaded into the buffer 1004 from the S- Block picked for GC may be first determined to be valid or invalid at the journal level, and then, if determined valid, compacted to contain only valid entries.
- invalid S-Journal entries are simply not copied to the new version of the S- Journal 2502.
- the new version 2502 of the S-Journal will be smaller (i.e., comprise fewer entries) than the older version 2402 thereof, presuming that the S-Journal 2402 had one or more obsolete entries. It is to be noted that if an S- Journal has all valid entries, the size of the new version thereof will remain the same.
- the S-Journal 2502 (the new version of the S-Journal 2402, which is now invalid or obsolete) may then be written to the current open System S-Block which, in Fig. 26, is Open System S-Block 1 , reference numeral 2206. Thereafter, the S-Journal Map 2202 may be updated with the new location of the S- Journal 2502 in Open System S-Block 1. At the end of this process, the S-Journals in System S-Block 3 (2208) have been garbage collected and System S-Block 3 may then be erased and made available for future programming.
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KR1020157011769A KR101911589B1 (en) | 2012-10-05 | 2013-09-30 | Methods, devices and systems for physical-to-logical mapping in solid state drives |
CN201380063439.2A CN105027090B (en) | 2012-10-05 | 2013-09-30 | Method, apparatus and system for the physics in solid-state drive to logical mappings |
JP2015535725A JP6210570B2 (en) | 2012-10-05 | 2013-09-30 | Method, apparatus and system for physical logical mapping in solid state drives |
HK16104405.3A HK1216443A1 (en) | 2012-10-05 | 2016-04-18 | Methods, devices and systems for physical-to-logical mapping in solid state drives |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9959203B2 (en) | 2014-06-23 | 2018-05-01 | Google Llc | Managing storage devices |
WO2019040320A1 (en) * | 2017-08-21 | 2019-02-28 | Micron Technology, Inc. | Logical to physical mapping |
US10997085B2 (en) | 2019-06-03 | 2021-05-04 | International Business Machines Corporation | Compression for flash translation layer |
US11481121B2 (en) | 2016-09-30 | 2022-10-25 | Amazon Technologies, Inc. | Physical media aware spacially coupled journaling and replay |
US11650931B2 (en) | 2018-12-31 | 2023-05-16 | Micron Technology, Inc. | Hybrid logical to physical caching scheme of L2P cache and L2P changelog |
Families Citing this family (171)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9176859B2 (en) | 2009-01-07 | 2015-11-03 | Siliconsystems, Inc. | Systems and methods for improving the performance of non-volatile memory operations |
US10079048B2 (en) | 2009-03-24 | 2018-09-18 | Western Digital Technologies, Inc. | Adjusting access of non-volatile semiconductor memory based on access time |
US9753847B2 (en) | 2009-10-27 | 2017-09-05 | Western Digital Technologies, Inc. | Non-volatile semiconductor memory segregating sequential, random, and system data to reduce garbage collection for page based mapping |
US8782327B1 (en) | 2010-05-11 | 2014-07-15 | Western Digital Technologies, Inc. | System and method for managing execution of internal commands and host commands in a solid-state memory |
US9026716B2 (en) | 2010-05-12 | 2015-05-05 | Western Digital Technologies, Inc. | System and method for managing garbage collection in solid-state memory |
US8959284B1 (en) | 2010-06-28 | 2015-02-17 | Western Digital Technologies, Inc. | Disk drive steering write data to write cache based on workload |
US9058280B1 (en) | 2010-08-13 | 2015-06-16 | Western Digital Technologies, Inc. | Hybrid drive migrating data from disk to non-volatile semiconductor memory based on accumulated access time |
US8769190B1 (en) | 2010-09-15 | 2014-07-01 | Western Digital Technologies, Inc. | System and method for reducing contentions in solid-state memory access |
US8788779B1 (en) | 2010-09-17 | 2014-07-22 | Western Digital Technologies, Inc. | Non-volatile storage subsystem with energy-based performance throttling |
US9164886B1 (en) | 2010-09-21 | 2015-10-20 | Western Digital Technologies, Inc. | System and method for multistage processing in a memory storage subsystem |
US9021192B1 (en) | 2010-09-21 | 2015-04-28 | Western Digital Technologies, Inc. | System and method for enhancing processing of memory access requests |
US9069475B1 (en) | 2010-10-26 | 2015-06-30 | Western Digital Technologies, Inc. | Hybrid drive selectively spinning up disk when powered on |
US8700950B1 (en) | 2011-02-11 | 2014-04-15 | Western Digital Technologies, Inc. | System and method for data error recovery in a solid state subsystem |
US8700951B1 (en) | 2011-03-09 | 2014-04-15 | Western Digital Technologies, Inc. | System and method for improving a data redundancy scheme in a solid state subsystem with additional metadata |
US8700834B2 (en) | 2011-09-06 | 2014-04-15 | Western Digital Technologies, Inc. | Systems and methods for an enhanced controller architecture in data storage systems |
US9195530B1 (en) | 2011-09-06 | 2015-11-24 | Western Digital Technologies, Inc. | Systems and methods for improved data management in data storage systems |
US8707104B1 (en) | 2011-09-06 | 2014-04-22 | Western Digital Technologies, Inc. | Systems and methods for error injection in data storage systems |
US8713357B1 (en) | 2011-09-06 | 2014-04-29 | Western Digital Technologies, Inc. | Systems and methods for detailed error reporting in data storage systems |
US9268701B1 (en) | 2011-11-21 | 2016-02-23 | Western Digital Technologies, Inc. | Caching of data in data storage systems by managing the size of read and write cache based on a measurement of cache reliability |
US8959416B1 (en) | 2011-12-16 | 2015-02-17 | Western Digital Technologies, Inc. | Memory defect management using signature identification |
US9348741B1 (en) | 2011-12-19 | 2016-05-24 | Western Digital Technologies, Inc. | Systems and methods for handling write data access requests in data storage devices |
US9053008B1 (en) | 2012-03-26 | 2015-06-09 | Western Digital Technologies, Inc. | Systems and methods for providing inline parameter service in data storage devices |
US9977612B1 (en) | 2012-05-11 | 2018-05-22 | Western Digital Technologies, Inc. | System data management using garbage collection and logs |
US9170932B1 (en) | 2012-05-22 | 2015-10-27 | Western Digital Technologies, Inc. | System data storage mechanism providing coherency and segmented data loading |
US8954653B1 (en) | 2012-06-26 | 2015-02-10 | Western Digital Technologies, Inc. | Mechanisms for efficient management of system data in data storage systems |
US8924832B1 (en) | 2012-06-26 | 2014-12-30 | Western Digital Technologies, Inc. | Efficient error handling mechanisms in data storage systems |
US8966343B2 (en) | 2012-08-21 | 2015-02-24 | Western Digital Technologies, Inc. | Solid-state drive retention monitor using reference blocks |
US9507523B1 (en) | 2012-10-12 | 2016-11-29 | Western Digital Technologies, Inc. | Methods, devices and systems for variable size logical page management in a solid state drive |
US9489296B1 (en) | 2012-10-17 | 2016-11-08 | Western Digital Technologies, Inc. | Methods, devices and systems for hardware-based garbage collection in solid state drives |
US8972826B2 (en) | 2012-10-24 | 2015-03-03 | Western Digital Technologies, Inc. | Adaptive error correction codes for data storage systems |
US9177638B2 (en) | 2012-11-13 | 2015-11-03 | Western Digital Technologies, Inc. | Methods and devices for avoiding lower page corruption in data storage devices |
US8954694B2 (en) | 2012-11-15 | 2015-02-10 | Western Digital Technologies, Inc. | Methods, data storage devices and systems for fragmented firmware table rebuild in a solid state drive |
US9021339B2 (en) | 2012-11-29 | 2015-04-28 | Western Digital Technologies, Inc. | Data reliability schemes for data storage systems |
US9059736B2 (en) | 2012-12-03 | 2015-06-16 | Western Digital Technologies, Inc. | Methods, solid state drive controllers and data storage devices having a runtime variable raid protection scheme |
US9032271B2 (en) | 2012-12-07 | 2015-05-12 | Western Digital Technologies, Inc. | System and method for lower page data recovery in a solid state drive |
US8954655B2 (en) | 2013-01-14 | 2015-02-10 | Western Digital Technologies, Inc. | Systems and methods of configuring a mode of operation in a solid-state memory |
US8972655B2 (en) | 2013-01-21 | 2015-03-03 | Western Digital Technolgies, Inc. | Initialization of a storage device |
US9495288B2 (en) * | 2013-01-22 | 2016-11-15 | Seagate Technology Llc | Variable-size flash translation layer |
US9274966B1 (en) | 2013-02-20 | 2016-03-01 | Western Digital Technologies, Inc. | Dynamically throttling host commands to disk drives |
US9454474B2 (en) | 2013-03-05 | 2016-09-27 | Western Digital Technologies, Inc. | Methods, devices and systems for two stage power-on map rebuild with free space accounting in a solid state drive |
US8924824B1 (en) | 2013-03-12 | 2014-12-30 | Western Digital Technologies, Inc. | Soft-decision input generation for data storage systems |
US8990668B2 (en) | 2013-03-14 | 2015-03-24 | Western Digital Technologies, Inc. | Decoding data stored in solid-state memory |
US9218279B2 (en) | 2013-03-15 | 2015-12-22 | Western Digital Technologies, Inc. | Atomic write command support in a solid state drive |
US9448738B2 (en) | 2013-03-15 | 2016-09-20 | Western Digital Technologies, Inc. | Compression and formatting of data for data storage systems |
US9335950B2 (en) | 2013-03-15 | 2016-05-10 | Western Digital Technologies, Inc. | Multiple stream compression and formatting of data for data storage systems |
US9338927B2 (en) | 2013-05-02 | 2016-05-10 | Western Digital Technologies, Inc. | Thermal interface material pad and method of forming the same |
US9195293B1 (en) | 2013-05-03 | 2015-11-24 | Western Digital Technologies, Inc. | User controlled data storage device power and performance settings |
US10417123B1 (en) | 2013-05-16 | 2019-09-17 | Western Digital Technologies, Inc. | Systems and methods for improving garbage collection and wear leveling performance in data storage systems |
US9081700B2 (en) | 2013-05-16 | 2015-07-14 | Western Digital Technologies, Inc. | High performance read-modify-write system providing line-rate merging of dataframe segments in hardware |
US9170938B1 (en) | 2013-05-17 | 2015-10-27 | Western Digital Technologies, Inc. | Method and system for atomically writing scattered information in a solid state storage device |
US9280200B1 (en) | 2013-05-20 | 2016-03-08 | Western Digital Technologies, Inc. | Automatic peak current throttle of tiered storage elements |
US9740248B2 (en) | 2013-06-07 | 2017-08-22 | Western Digital Technologies, Inc. | Component placement within a solid state drive |
US9274978B2 (en) | 2013-06-10 | 2016-03-01 | Western Digital Technologies, Inc. | Migration of encrypted data for data storage systems |
US9436630B2 (en) | 2013-06-11 | 2016-09-06 | Western Digital Technologies, Inc. | Using dual phys to support multiple PCIe link widths |
US9830257B1 (en) | 2013-06-12 | 2017-11-28 | Western Digital Technologies, Inc. | Fast saving of data during power interruption in data storage systems |
US9665501B1 (en) | 2013-06-18 | 2017-05-30 | Western Digital Technologies, Inc. | Self-encrypting data storage device supporting object-level encryption |
US9304560B2 (en) | 2013-06-19 | 2016-04-05 | Western Digital Technologies, Inc. | Backup power for reducing host current transients |
GB2515539A (en) | 2013-06-27 | 2014-12-31 | Samsung Electronics Co Ltd | Data structure for physical layer encapsulation |
US9208101B2 (en) | 2013-06-26 | 2015-12-08 | Western Digital Technologies, Inc. | Virtual NAND capacity extension in a hybrid drive |
US9583153B1 (en) | 2013-06-28 | 2017-02-28 | Western Digital Technologies, Inc. | Memory card placement within a solid state drive |
US9042197B2 (en) | 2013-07-23 | 2015-05-26 | Western Digital Technologies, Inc. | Power fail protection and recovery using low power states in a data storage device/system |
US9141176B1 (en) | 2013-07-29 | 2015-09-22 | Western Digital Technologies, Inc. | Power management for data storage device |
US9442668B1 (en) | 2013-08-29 | 2016-09-13 | Western Digital Technologies, Inc. | Adaptive power management control with performance feedback |
US9263136B1 (en) | 2013-09-04 | 2016-02-16 | Western Digital Technologies, Inc. | Data retention flags in solid-state drives |
US9304709B2 (en) | 2013-09-06 | 2016-04-05 | Western Digital Technologies, Inc. | High performance system providing selective merging of dataframe segments in hardware |
US9007841B1 (en) | 2013-10-24 | 2015-04-14 | Western Digital Technologies, Inc. | Programming scheme for improved voltage distribution in solid-state memory |
US9330143B2 (en) | 2013-10-24 | 2016-05-03 | Western Digital Technologies, Inc. | Data storage device supporting accelerated database operations |
US10444998B1 (en) | 2013-10-24 | 2019-10-15 | Western Digital Technologies, Inc. | Data storage device providing data maintenance services |
US8917471B1 (en) | 2013-10-29 | 2014-12-23 | Western Digital Technologies, Inc. | Power management for data storage device |
US9323467B2 (en) | 2013-10-29 | 2016-04-26 | Western Digital Technologies, Inc. | Data storage device startup |
US9286176B1 (en) | 2013-11-08 | 2016-03-15 | Western Digital Technologies, Inc. | Selective skipping of blocks in an SSD |
US9270296B1 (en) | 2013-11-13 | 2016-02-23 | Western Digital Technologies, Inc. | Method and system for soft decoding through single read |
US9529710B1 (en) | 2013-12-06 | 2016-12-27 | Western Digital Technologies, Inc. | Interleaved channels in a solid-state drive |
US10140067B1 (en) | 2013-12-19 | 2018-11-27 | Western Digital Technologies, Inc. | Data management for data storage device with multiple types of non-volatile memory media |
US9684568B2 (en) * | 2013-12-26 | 2017-06-20 | Silicon Motion, Inc. | Data storage device and flash memory control method |
US9036283B1 (en) | 2014-01-22 | 2015-05-19 | Western Digital Technologies, Inc. | Data storage device with selective write to a first storage media or a second storage media |
US9337864B1 (en) | 2014-01-29 | 2016-05-10 | Western Digital Technologies, Inc. | Non-binary LDPC decoder using binary subgroup processing |
US9250994B1 (en) | 2014-02-05 | 2016-02-02 | Western Digital Technologies, Inc. | Non-binary low-density parity check (LDPC) decoding using trellis maximization |
US9384088B1 (en) | 2014-02-24 | 2016-07-05 | Western Digital Technologies, Inc. | Double writing map table entries in a data storage system to guard against silent corruption |
US9354955B1 (en) | 2014-03-19 | 2016-05-31 | Western Digital Technologies, Inc. | Partial garbage collection for fast error handling and optimized garbage collection for the invisible band |
US9268487B2 (en) | 2014-03-24 | 2016-02-23 | Western Digital Technologies, Inc. | Method and apparatus for restricting writes to solid state memory when an end-of life condition is reached |
US9348520B2 (en) | 2014-03-24 | 2016-05-24 | Western Digital Technologies, Inc. | Lifetime extension of non-volatile semiconductor memory for data storage device |
US9448742B2 (en) | 2014-03-27 | 2016-09-20 | Western Digital Technologies, Inc. | Communication between a host and a secondary storage device |
TWI522804B (en) | 2014-04-23 | 2016-02-21 | 威盛電子股份有限公司 | Flash memory controller and data storage device and flash memory control method |
US9564212B2 (en) | 2014-05-06 | 2017-02-07 | Western Digital Technologies, Inc. | Solid-state memory corruption mitigation |
US9690696B1 (en) | 2014-05-14 | 2017-06-27 | Western Digital Technologies, Inc. | Lifetime extension of memory for data storage system |
US9472222B2 (en) | 2014-05-16 | 2016-10-18 | Western Digital Technologies, Inc. | Vibration mitigation for a data storage device |
US9275741B1 (en) | 2014-09-10 | 2016-03-01 | Western Digital Technologies, Inc. | Temperature compensation management in solid-state memory |
US9418699B1 (en) | 2014-10-09 | 2016-08-16 | Western Digital Technologies, Inc. | Management of sequentially written data |
US9405356B1 (en) | 2014-10-21 | 2016-08-02 | Western Digital Technologies, Inc. | Temperature compensation in data storage device |
US9823859B2 (en) | 2014-11-06 | 2017-11-21 | Western Digital Technologies, Inc. | Mechanical shock mitigation for data storage |
US10915256B2 (en) * | 2015-02-25 | 2021-02-09 | SK Hynix Inc. | Efficient mapping scheme with deterministic power transition times for flash storage devices |
US9857995B1 (en) | 2015-03-09 | 2018-01-02 | Western Digital Technologies, Inc. | Data storage device and method providing non-volatile memory buffer for real-time primary non-volatile memory protection |
US9785563B1 (en) | 2015-08-13 | 2017-10-10 | Western Digital Technologies, Inc. | Read command processing for data storage system based on previous writes |
US9668337B2 (en) | 2015-09-08 | 2017-05-30 | Western Digital Technologies, Inc. | Temperature management in data storage devices |
US9727261B2 (en) | 2015-09-24 | 2017-08-08 | Western Digital Technologies, Inc. | Weighted programming patterns in solid-state data storage systems |
US9836232B1 (en) | 2015-09-30 | 2017-12-05 | Western Digital Technologies, Inc. | Data storage device and method for using secondary non-volatile memory for temporary metadata storage |
US10013174B2 (en) | 2015-09-30 | 2018-07-03 | Western Digital Technologies, Inc. | Mapping system selection for data storage device |
US9620226B1 (en) | 2015-10-30 | 2017-04-11 | Western Digital Technologies, Inc. | Data retention charge loss and read disturb compensation in solid-state data storage systems |
CN106843744B (en) * | 2015-12-03 | 2020-05-26 | 群联电子股份有限公司 | Data programming method and memory storage device |
US10126981B1 (en) | 2015-12-14 | 2018-11-13 | Western Digital Technologies, Inc. | Tiered storage using storage class memory |
US9940034B2 (en) | 2016-01-25 | 2018-04-10 | International Business Machines Corporation | Reducing read access latency by straddling pages across non-volatile memory channels |
US10162561B2 (en) | 2016-03-21 | 2018-12-25 | Apple Inc. | Managing backup of logical-to-physical translation information to control boot-time and write amplification |
US10157004B2 (en) * | 2016-04-14 | 2018-12-18 | Sandisk Technologies Llc | Storage system and method for recovering data corrupted in a host memory buffer |
CN107544913B (en) * | 2016-06-29 | 2021-09-28 | 北京忆恒创源科技股份有限公司 | FTL table rapid reconstruction method and device |
CN113590504B (en) * | 2016-06-29 | 2024-09-03 | 北京忆恒创源科技股份有限公司 | Solid state disk for storing log frames and log entries |
CN107544866B (en) * | 2016-06-29 | 2021-01-05 | 北京忆恒创源科技有限公司 | Log updating method and device |
CN106201778B (en) * | 2016-06-30 | 2019-06-25 | 联想(北京)有限公司 | Information processing method and storage equipment |
US9946463B2 (en) * | 2016-07-12 | 2018-04-17 | Western Digital Technologies, Inc. | Compression of indirection tables |
CN106155919B (en) * | 2016-07-26 | 2019-06-11 | 深圳市瑞耐斯技术有限公司 | A kind of control method and control system of 3D flash memory |
KR20180019419A (en) | 2016-08-16 | 2018-02-26 | 삼성전자주식회사 | Memory Controller, Memory System and Operating Method thereof |
US10387303B2 (en) | 2016-08-16 | 2019-08-20 | Western Digital Technologies, Inc. | Non-volatile storage system with compute engine to accelerate big data applications |
CN107870870B (en) * | 2016-09-28 | 2021-12-14 | 北京忆芯科技有限公司 | Accessing memory space beyond address bus width |
CN107870867B (en) * | 2016-09-28 | 2021-12-14 | 北京忆芯科技有限公司 | Method and device for 32-bit CPU to access memory space larger than 4GB |
US10489289B1 (en) | 2016-09-30 | 2019-11-26 | Amazon Technologies, Inc. | Physical media aware spacially coupled journaling and trim |
US10747678B2 (en) | 2016-10-27 | 2020-08-18 | Seagate Technology Llc | Storage tier with compressed forward map |
US10459644B2 (en) | 2016-10-28 | 2019-10-29 | Western Digital Techologies, Inc. | Non-volatile storage system with integrated compute engine and optimized use of local fast memory |
KR20180051706A (en) | 2016-11-07 | 2018-05-17 | 삼성전자주식회사 | Memory system performing error correction of address mapping table |
TWI591533B (en) * | 2016-11-25 | 2017-07-11 | 慧榮科技股份有限公司 | Data storage method and data recovery method for data storage device, and data storage device using the same methods |
US10613973B1 (en) | 2016-12-28 | 2020-04-07 | Amazon Technologies, Inc. | Garbage collection in solid state drives |
US10565123B2 (en) | 2017-04-10 | 2020-02-18 | Western Digital Technologies, Inc. | Hybrid logical to physical address translation for non-volatile storage devices with integrated compute module |
CN108733575B (en) * | 2017-04-20 | 2022-12-27 | 深圳市得一微电子有限责任公司 | Method for reconstructing physical mapping table by logic after power-off restart and solid state disk |
KR102458312B1 (en) | 2017-06-09 | 2022-10-24 | 삼성전자주식회사 | Storage device and operating method thereof |
US10845866B2 (en) * | 2017-06-22 | 2020-11-24 | Micron Technology, Inc. | Non-volatile memory system or sub-system |
US10649661B2 (en) * | 2017-06-26 | 2020-05-12 | Western Digital Technologies, Inc. | Dynamically resizing logical storage blocks |
WO2019000355A1 (en) * | 2017-06-30 | 2019-01-03 | Intel Corporation | Log structure with compressed keys |
US10379948B2 (en) | 2017-10-02 | 2019-08-13 | Western Digital Technologies, Inc. | Redundancy coding stripe based on internal addresses of storage devices |
US10474528B2 (en) | 2017-10-02 | 2019-11-12 | Western Digital Technologies, Inc. | Redundancy coding stripe based on coordinated internal address scheme across multiple devices |
US10877898B2 (en) * | 2017-11-16 | 2020-12-29 | Alibaba Group Holding Limited | Method and system for enhancing flash translation layer mapping flexibility for performance and lifespan improvements |
CN109800180B (en) * | 2017-11-17 | 2023-06-27 | 爱思开海力士有限公司 | Method and memory system for address mapping |
KR20190083051A (en) * | 2018-01-03 | 2019-07-11 | 에스케이하이닉스 주식회사 | Controller and operation method thereof |
TWI670594B (en) * | 2018-01-18 | 2019-09-01 | 慧榮科技股份有限公司 | Data storage device |
KR102527132B1 (en) * | 2018-01-19 | 2023-05-02 | 에스케이하이닉스 주식회사 | Memory system and operating method of memory system |
CN110096452B (en) * | 2018-01-31 | 2024-05-28 | 北京忆恒创源科技股份有限公司 | Nonvolatile random access memory and method for providing the same |
TWI679538B (en) * | 2018-03-31 | 2019-12-11 | 慧榮科技股份有限公司 | Control unit for data storage system and method for updating logical-to-physical mapping table |
US10725941B2 (en) | 2018-06-30 | 2020-07-28 | Western Digital Technologies, Inc. | Multi-device storage system with hosted services on peer storage devices |
US10409511B1 (en) | 2018-06-30 | 2019-09-10 | Western Digital Technologies, Inc. | Multi-device storage system with distributed read/write processing |
KR102612918B1 (en) * | 2018-07-27 | 2023-12-13 | 에스케이하이닉스 주식회사 | Controller and operation method thereof |
US10592144B2 (en) | 2018-08-03 | 2020-03-17 | Western Digital Technologies, Inc. | Storage system fabric with multichannel compute complex |
US10649843B2 (en) | 2018-08-03 | 2020-05-12 | Western Digital Technologies, Inc. | Storage systems with peer data scrub |
US10901848B2 (en) | 2018-08-03 | 2021-01-26 | Western Digital Technologies, Inc. | Storage systems with peer data recovery |
US10824526B2 (en) | 2018-08-03 | 2020-11-03 | Western Digital Technologies, Inc. | Using failed storage device in peer-to-peer storage system to perform storage-centric task |
US10831603B2 (en) | 2018-08-03 | 2020-11-10 | Western Digital Technologies, Inc. | Rebuild assist using failed storage device |
US10877810B2 (en) | 2018-09-29 | 2020-12-29 | Western Digital Technologies, Inc. | Object storage system with metadata operation priority processing |
US10769062B2 (en) | 2018-10-01 | 2020-09-08 | Western Digital Technologies, Inc. | Fine granularity translation layer for data storage devices |
US10956071B2 (en) | 2018-10-01 | 2021-03-23 | Western Digital Technologies, Inc. | Container key value store for data storage devices |
TWI709042B (en) * | 2018-11-08 | 2020-11-01 | 慧榮科技股份有限公司 | Method and apparatus for performing mapping information management regarding redundant array of independent disks, and associated storage system |
US10740231B2 (en) | 2018-11-20 | 2020-08-11 | Western Digital Technologies, Inc. | Data access in data storage device including storage class memory |
US11182258B2 (en) | 2019-01-04 | 2021-11-23 | Western Digital Technologies, Inc. | Data rebuild using dynamic peer work allocation |
US11061598B2 (en) * | 2019-03-25 | 2021-07-13 | Western Digital Technologies, Inc. | Optimized handling of multiple copies in storage management |
TWI698744B (en) * | 2019-04-10 | 2020-07-11 | 慧榮科技股份有限公司 | Data storage device and method for updating logical-to-physical mapping table |
US11226904B2 (en) * | 2019-04-26 | 2022-01-18 | Hewlett Packard Enterprise Development Lp | Cache data location system |
US11237893B2 (en) * | 2019-06-26 | 2022-02-01 | Western Digital Technologies, Inc. | Use of error correction-based metric for identifying poorly performing data storage devices |
US10825535B1 (en) | 2019-08-28 | 2020-11-03 | Micron Technology, Inc. | Intra-code word wear leveling techniques |
US10977189B2 (en) | 2019-09-06 | 2021-04-13 | Seagate Technology Llc | Reducing forward mapping table size using hashing |
TWI724550B (en) * | 2019-09-19 | 2021-04-11 | 慧榮科技股份有限公司 | Data storage device and non-volatile memory control method |
US11016905B1 (en) | 2019-11-13 | 2021-05-25 | Western Digital Technologies, Inc. | Storage class memory access |
US11194709B2 (en) * | 2019-12-30 | 2021-12-07 | Micron Technology, Inc. | Asynchronous power loss recovery for memory devices |
CN113127376B (en) * | 2019-12-30 | 2024-02-27 | 阿里巴巴集团控股有限公司 | Control method, device and equipment for solid state drive |
CN111338990B (en) * | 2020-02-12 | 2021-01-12 | 合肥康芯威存储技术有限公司 | Data storage device, data storage method and storage system |
JP2021149549A (en) | 2020-03-19 | 2021-09-27 | キオクシア株式会社 | Storage device and cache control method of address translation table |
US11249921B2 (en) | 2020-05-06 | 2022-02-15 | Western Digital Technologies, Inc. | Page modification encoding and caching |
US11726921B2 (en) * | 2020-05-21 | 2023-08-15 | Seagate Technology Llc | Combined page footer for parallel metadata storage |
CN113885778B (en) * | 2020-07-02 | 2024-03-08 | 慧荣科技股份有限公司 | Data processing method and corresponding data storage device |
CN113961140B (en) | 2020-07-02 | 2024-06-11 | 慧荣科技股份有限公司 | Data processing method and corresponding data storage device |
US11360671B2 (en) * | 2020-07-22 | 2022-06-14 | Seagate Technology Llc | Region-specific directed offline scan for hard disk drive |
US11550724B2 (en) | 2020-08-14 | 2023-01-10 | Samsung Electronics Co., Ltd. | Method and system for logical to physical (L2P) mapping for data-storage device comprising nonvolatile memory |
KR20220032826A (en) | 2020-09-08 | 2022-03-15 | 에스케이하이닉스 주식회사 | Apparatus and method for controlling and storing map data in a memory system |
US20210223979A1 (en) * | 2021-03-16 | 2021-07-22 | Intel Corporation | On-ssd-copy techniques using copy-on-write |
JP2024043063A (en) * | 2022-09-16 | 2024-03-29 | キオクシア株式会社 | Memory system and control method |
CN115563026B (en) * | 2022-12-07 | 2023-04-14 | 合肥康芯威存储技术有限公司 | Mapping table reconstruction method and data storage device |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090049229A1 (en) * | 2005-12-09 | 2009-02-19 | Matsushita Electric Industrial Co., Ltd. | Nonvolatile memory device, method of writing data,and method of reading out data |
US20090216943A1 (en) | 2008-02-21 | 2009-08-27 | Hitachi Global Storage Technologies Netherlands B. V. | Data storage device and data management method in data storage device |
US20100030999A1 (en) * | 2008-08-01 | 2010-02-04 | Torsten Hinz | Process and Method for Logical-to-Physical Address Mapping in Solid Sate Disks |
US20110072194A1 (en) * | 2009-09-23 | 2011-03-24 | Lsi Corporation | Logical-to-Physical Address Translation for Solid State Disks |
US20120173795A1 (en) * | 2010-05-25 | 2012-07-05 | Ocz Technology Group, Inc. | Solid state drive with low write amplification |
US20120226887A1 (en) * | 2011-03-06 | 2012-09-06 | Micron Technology, Inc. | Logical address translation |
Family Cites Families (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7886108B2 (en) | 2000-01-06 | 2011-02-08 | Super Talent Electronics, Inc. | Methods and systems of managing memory addresses in a large capacity multi-level cell (MLC) based flash memory device |
US7660941B2 (en) | 2003-09-10 | 2010-02-09 | Super Talent Electronics, Inc. | Two-level RAM lookup table for block and page allocation and wear-leveling in limited-write flash-memories |
US7610438B2 (en) | 2000-01-06 | 2009-10-27 | Super Talent Electronics, Inc. | Flash-memory card for caching a hard disk drive with data-area toggling of pointers stored in a RAM lookup table |
US8266367B2 (en) | 2003-12-02 | 2012-09-11 | Super Talent Electronics, Inc. | Multi-level striping and truncation channel-equalization for flash-memory system |
US7526599B2 (en) * | 2002-10-28 | 2009-04-28 | Sandisk Corporation | Method and apparatus for effectively enabling an out of sequence write process within a non-volatile memory system |
US20040088474A1 (en) | 2002-10-30 | 2004-05-06 | Lin Jin Shin | NAND type flash memory disk device and method for detecting the logical address |
US20040109376A1 (en) | 2002-12-09 | 2004-06-10 | Jin-Shin Lin | Method for detecting logical address of flash memory |
US7139864B2 (en) | 2003-12-30 | 2006-11-21 | Sandisk Corporation | Non-volatile memory and method with block management system |
JP2005293774A (en) | 2004-04-02 | 2005-10-20 | Hitachi Global Storage Technologies Netherlands Bv | Control method of disk unit |
US7441067B2 (en) | 2004-11-15 | 2008-10-21 | Sandisk Corporation | Cyclic flash memory wear leveling |
KR101404083B1 (en) | 2007-11-06 | 2014-06-09 | 삼성전자주식회사 | Solid state disk and operating method thereof |
US7363421B2 (en) | 2005-01-13 | 2008-04-22 | Stmicroelectronics S.R.L. | Optimizing write/erase operations in memory devices |
US8452929B2 (en) | 2005-04-21 | 2013-05-28 | Violin Memory Inc. | Method and system for storage of data in non-volatile media |
US20070016721A1 (en) | 2005-07-18 | 2007-01-18 | Wyse Technology Inc. | Flash file system power-up by using sequential sector allocation |
US20070094445A1 (en) | 2005-10-20 | 2007-04-26 | Trika Sanjeev N | Method to enable fast disk caching and efficient operations on solid state disks |
US7509471B2 (en) | 2005-10-27 | 2009-03-24 | Sandisk Corporation | Methods for adaptively handling data writes in non-volatile memories |
US7711923B2 (en) | 2006-06-23 | 2010-05-04 | Microsoft Corporation | Persistent flash memory mapping table |
KR100843543B1 (en) | 2006-10-25 | 2008-07-04 | 삼성전자주식회사 | System comprising flash memory device and data recovery method thereof |
US8316206B2 (en) * | 2007-02-12 | 2012-11-20 | Marvell World Trade Ltd. | Pilot placement for non-volatile memory |
JP4939234B2 (en) * | 2007-01-11 | 2012-05-23 | 株式会社日立製作所 | Flash memory module, storage device using the flash memory module as a recording medium, and address conversion table verification method for the flash memory module |
US20080288712A1 (en) | 2007-04-25 | 2008-11-20 | Cornwell Michael J | Accessing metadata with an external host |
US20080282024A1 (en) | 2007-05-09 | 2008-11-13 | Sudeep Biswas | Management of erase operations in storage devices based on flash memories |
US8095851B2 (en) | 2007-09-06 | 2012-01-10 | Siliconsystems, Inc. | Storage subsystem capable of adjusting ECC settings based on monitored conditions |
KR101436505B1 (en) | 2008-01-03 | 2014-09-02 | 삼성전자주식회사 | Memory device |
TWI375956B (en) | 2008-02-29 | 2012-11-01 | Phison Electronics Corp | Block management methnd for flash memory, controller and storage sysetm thereof |
KR101398200B1 (en) | 2008-03-18 | 2014-05-26 | 삼성전자주식회사 | Memory device and encoding and/or decoding method |
KR101398212B1 (en) | 2008-03-18 | 2014-05-26 | 삼성전자주식회사 | Memory device and encoding and/or decoding method |
US8180954B2 (en) | 2008-04-15 | 2012-05-15 | SMART Storage Systems, Inc. | Flash management using logical page size |
KR101518199B1 (en) | 2008-05-23 | 2015-05-06 | 삼성전자주식회사 | Error correction apparatus method there-of and memory device comprising the apparatus |
US8412880B2 (en) | 2009-01-08 | 2013-04-02 | Micron Technology, Inc. | Memory system controller to manage wear leveling across a plurality of storage nodes |
US8255774B2 (en) | 2009-02-17 | 2012-08-28 | Seagate Technology | Data storage system with non-volatile memory for error correction |
KR20100104623A (en) | 2009-03-18 | 2010-09-29 | 삼성전자주식회사 | Data processing system and code rate controlling scheme thereof |
KR101571693B1 (en) | 2009-04-15 | 2015-11-26 | 삼성전자주식회사 | Non-volatile semiconductor memory controller for processing one request first before completing another request Memory system having the same and Method there-of |
US20100306451A1 (en) | 2009-06-01 | 2010-12-02 | Joshua Johnson | Architecture for nand flash constraint enforcement |
US20110004720A1 (en) * | 2009-07-02 | 2011-01-06 | Chun-Ying Chiang | Method and apparatus for performing full range random writing on a non-volatile memory |
US8688894B2 (en) | 2009-09-03 | 2014-04-01 | Pioneer Chip Technology Ltd. | Page based management of flash storage |
US8463983B2 (en) | 2009-09-15 | 2013-06-11 | International Business Machines Corporation | Container marker scheme for reducing write amplification in solid state devices |
US20110072333A1 (en) | 2009-09-24 | 2011-03-24 | Innostor Technology Corporation | Control method for flash memory based on variable length ecc |
US8364929B2 (en) | 2009-10-23 | 2013-01-29 | Seagate Technology Llc | Enabling spanning for a storage device |
US8745353B2 (en) | 2009-10-23 | 2014-06-03 | Seagate Technology Llc | Block boundary resolution for mismatched logical and physical block sizes |
US8255661B2 (en) | 2009-11-13 | 2012-08-28 | Western Digital Technologies, Inc. | Data storage system comprising a mapping bridge for aligning host block size with physical block size of a data storage device |
JP4738536B1 (en) | 2010-01-29 | 2011-08-03 | 株式会社東芝 | Nonvolatile memory controller and nonvolatile memory control method |
US8327226B2 (en) | 2010-02-03 | 2012-12-04 | Seagate Technology Llc | Adjustable error correction code length in an electrical storage device |
US8407449B1 (en) | 2010-02-26 | 2013-03-26 | Western Digital Technologies, Inc. | Non-volatile semiconductor memory storing an inverse map for rebuilding a translation table |
US8458417B2 (en) | 2010-03-10 | 2013-06-04 | Seagate Technology Llc | Garbage collection in a storage device |
US20110252289A1 (en) | 2010-04-08 | 2011-10-13 | Seagate Technology Llc | Adjusting storage device parameters based on reliability sensing |
US9026716B2 (en) | 2010-05-12 | 2015-05-05 | Western Digital Technologies, Inc. | System and method for managing garbage collection in solid-state memory |
US8533550B2 (en) | 2010-06-29 | 2013-09-10 | Intel Corporation | Method and system to improve the performance and/or reliability of a solid-state drive |
TWI455144B (en) | 2010-07-22 | 2014-10-01 | Silicon Motion Inc | Controlling methods and controllers utilized in flash memory device |
CN102567221B (en) * | 2010-12-29 | 2015-06-10 | 群联电子股份有限公司 | Data management method, memory controller and memory storage device |
US8458133B2 (en) * | 2011-01-24 | 2013-06-04 | Apple Inc. | Coordinating sync points between a non-volatile memory and a file system |
TWI432962B (en) * | 2011-10-06 | 2014-04-01 | Mstar Semiconductor Inc | Electronic system and memory managing method thereof |
-
2012
- 2012-10-05 US US13/645,822 patent/US9268682B2/en not_active Expired - Fee Related
-
2013
- 2013-09-30 JP JP2015535725A patent/JP6210570B2/en not_active Expired - Fee Related
- 2013-09-30 AU AU2013327582A patent/AU2013327582B2/en not_active Ceased
- 2013-09-30 CN CN201380063439.2A patent/CN105027090B/en not_active Expired - Fee Related
- 2013-09-30 KR KR1020157011769A patent/KR101911589B1/en active IP Right Grant
- 2013-09-30 EP EP13844022.7A patent/EP2904496A4/en not_active Withdrawn
- 2013-09-30 WO PCT/US2013/062723 patent/WO2014055445A1/en active Application Filing
-
2016
- 2016-04-18 HK HK16104405.3A patent/HK1216443A1/en unknown
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090049229A1 (en) * | 2005-12-09 | 2009-02-19 | Matsushita Electric Industrial Co., Ltd. | Nonvolatile memory device, method of writing data,and method of reading out data |
US20090216943A1 (en) | 2008-02-21 | 2009-08-27 | Hitachi Global Storage Technologies Netherlands B. V. | Data storage device and data management method in data storage device |
US20100030999A1 (en) * | 2008-08-01 | 2010-02-04 | Torsten Hinz | Process and Method for Logical-to-Physical Address Mapping in Solid Sate Disks |
US20110072194A1 (en) * | 2009-09-23 | 2011-03-24 | Lsi Corporation | Logical-to-Physical Address Translation for Solid State Disks |
US20120173795A1 (en) * | 2010-05-25 | 2012-07-05 | Ocz Technology Group, Inc. | Solid state drive with low write amplification |
US20120226887A1 (en) * | 2011-03-06 | 2012-09-06 | Micron Technology, Inc. | Logical address translation |
Non-Patent Citations (1)
Title |
---|
See also references of EP2904496A4 * |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9959203B2 (en) | 2014-06-23 | 2018-05-01 | Google Llc | Managing storage devices |
US11042478B2 (en) | 2014-06-23 | 2021-06-22 | Google Llc | Managing storage devices |
US11797434B2 (en) | 2014-06-23 | 2023-10-24 | Google Llc | Managing storage devices |
US11481121B2 (en) | 2016-09-30 | 2022-10-25 | Amazon Technologies, Inc. | Physical media aware spacially coupled journaling and replay |
WO2019040320A1 (en) * | 2017-08-21 | 2019-02-28 | Micron Technology, Inc. | Logical to physical mapping |
US10628326B2 (en) | 2017-08-21 | 2020-04-21 | Micron Technology, Inc. | Logical to physical mapping |
US11055230B2 (en) * | 2017-08-21 | 2021-07-06 | Micron Technology, Inc. | Logical to physical mapping |
US11650931B2 (en) | 2018-12-31 | 2023-05-16 | Micron Technology, Inc. | Hybrid logical to physical caching scheme of L2P cache and L2P changelog |
US10997085B2 (en) | 2019-06-03 | 2021-05-04 | International Business Machines Corporation | Compression for flash translation layer |
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AU2013327582A1 (en) | 2015-05-14 |
JP2015530685A (en) | 2015-10-15 |
CN105027090B (en) | 2018-03-09 |
EP2904496A1 (en) | 2015-08-12 |
US20140101369A1 (en) | 2014-04-10 |
JP6210570B2 (en) | 2017-10-11 |
AU2013327582B2 (en) | 2019-01-17 |
HK1216443A1 (en) | 2016-11-11 |
CN105027090A (en) | 2015-11-04 |
KR20150084817A (en) | 2015-07-22 |
US9268682B2 (en) | 2016-02-23 |
KR101911589B1 (en) | 2018-10-24 |
EP2904496A4 (en) | 2016-06-01 |
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