WO2014050229A1 - キャビティーを備えたデバイス部材およびキャビティーを備えたデバイス部材の製造方法 - Google Patents
キャビティーを備えたデバイス部材およびキャビティーを備えたデバイス部材の製造方法 Download PDFInfo
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- WO2014050229A1 WO2014050229A1 PCT/JP2013/066674 JP2013066674W WO2014050229A1 WO 2014050229 A1 WO2014050229 A1 WO 2014050229A1 JP 2013066674 W JP2013066674 W JP 2013066674W WO 2014050229 A1 WO2014050229 A1 WO 2014050229A1
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- Prior art keywords
- cavity
- layer
- gas
- device member
- intermediate layer
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 55
- 239000010410 layer Substances 0.000 claims abstract description 176
- 238000007789 sealing Methods 0.000 claims abstract description 76
- 239000002344 surface layer Substances 0.000 claims abstract description 71
- 238000005530 etching Methods 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 239000004065 semiconductor Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 30
- 230000001681 protective effect Effects 0.000 claims description 27
- 239000012212 insulator Substances 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 23
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 239000012466 permeate Substances 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 88
- 229920002120 photoresistant polymer Polymers 0.000 description 56
- 230000008859 change Effects 0.000 description 26
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 26
- 239000003566 sealing material Substances 0.000 description 20
- 235000012431 wafers Nutrition 0.000 description 19
- 230000008569 process Effects 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 238000000708 deep reactive-ion etching Methods 0.000 description 10
- 239000007788 liquid Substances 0.000 description 10
- 238000011161 development Methods 0.000 description 8
- 238000004528 spin coating Methods 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000035699 permeability Effects 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229920000052 poly(p-xylylene) Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 238000009623 Bosch process Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000005057 refrigeration Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000004378 air conditioning Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- RLUCXJBHKHIDSP-UHFFFAOYSA-N propane-1,2-diol;propanoic acid Chemical compound CCC(O)=O.CC(O)CO RLUCXJBHKHIDSP-UHFFFAOYSA-N 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
- G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00047—Cavities
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
- B81C1/00293—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS maintaining a controlled atmosphere with processes not provided for in B81C1/00285
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
Definitions
- the present invention belongs to the technical field of MEMS (Micro Electro Mechanical Systems), and relates to a device member having a cavity and a method for manufacturing the device member having a cavity.
- the device member provided with such a cavity can be used as, for example, a capacitance type pressure sensor, an ink jet printer head, a microchannel device used in medical treatment, biotechnology, or the like.
- Such capacitive pressure sensors include, for example, refrigerant pressure sensors for refrigeration, refrigeration, and air conditioning equipment, water pressure sensors such as water supply and industrial pumps, steam pressure sensors for steam boilers, and air / hydraulic industrial equipment air pressure. / Used for various applications such as oil pressure sensors and pressure sensors for automobiles.
- Patent Document 1 Japanese Patent Laid-Open No. 2004-260187
- 9 to 13 are schematic views showing the steps of a method for manufacturing a device member having such a conventional cavity.
- a device material 101 made of an SOI (Silicon On Insulator) wafer is prepared.
- a positive photoresist layer 108 is formed on the upper surface of the upper surface layer 106.
- the photoresist layer 108 is exposed with, for example, ultraviolet light (UV) through a photomask 110 having a predetermined pattern.
- development is performed with a developer such as TMAH (Tetra Methyl Ammonium Hydroxide).
- TMAH Tetra Methyl Ammonium Hydroxide
- the upper surface layer 106 is formed using a deep RIE (Deep Reactive Ion Etching) technique, for example, “Bosch process”.
- RIE Deep Reactive Ion Etching
- step of alternately performing etching with SF 6 and passivation with C 4 F 8 is carried out.
- an opening 112 having the same pattern as that of the photoresist layer 108 remaining in a predetermined pattern is formed in the upper surface layer 106.
- FIG. 10C all the photoresist layers 108 are removed.
- voids 114 having a predetermined pattern are formed in the intermediate layer 104.
- a metal such as aluminum, a semiconductor such as polysilicon, or a resin such as parylene is deposited from the upper surface of the upper surface layer 106 to form the sealing layer 116.
- a part of the sealing layer 116 enters and is sealed in the opening 112 formed in the upper surface layer 106, thereby forming the cavity 118.
- a positive photoresist layer 120 is spin-coated on the upper surface of the sealing layer 116.
- the photoresist layer 120 is exposed from, for example, ultraviolet rays (UV) from the upper surface of the photoresist layer 120 through a photomask 122 having a predetermined pattern. Thereafter, development is performed with a developer such as TMAH (Tetra Methyl Ammonium Hydroxide). As a result, as shown in FIG. 12B, the exposed portion of the photoresist is removed, and the photoresist layer 120 remains in a predetermined pattern.
- TMAH Tetra Methyl Ammonium Hydroxide
- the sealing layer 116 is aluminum, an aluminum etchant is used, and when the sealing layer 116 is resin, O 2 ashing using O 2 plasma is performed, as shown in FIG. As shown in C), unnecessary portions are removed from the sealing layer 116. Thereafter, by removing all the photoresist layers 120, the device member 100 in which the sealing layer 116 is formed in a predetermined pattern as shown in FIG. 13 is obtained.
- a predetermined circuit is formed on the upper surface layer 106 of the device member 100 according to the application.
- FIG. 15 is a schematic diagram showing an outline when the device member 100 manufactured by a conventional manufacturing method is used as a capacitance-type pressure sensor.
- the pressure sensor 200 uses the upper surface layer 106 sealed with the sealing layer 116 as the diaphragm 202.
- the diaphragm 202 is used as the counter electrode 204, and the substrate member 102 itself made of Si is also used as the counter electrode 206.
- the pressure sensor detects this pressure difference.
- the cavity 118 is sealed so that the inside of the cavity 118 is in a vacuum state, and as a result, the pressure reference chamber in which the pressure P1 in the cavity 118 is evacuated is configured as an absolute pressure type pressure. It is a sensor.
- the capacitance C of a general capacitor composed of two electrodes separated from each other via a dielectric (insulator) is expressed by the following equation.
- ⁇ represents the dielectric constant of the dielectric (insulator) between the electrodes
- S represents the area of the electrode
- d represents the distance between the electrodes.
- the capacitance C is proportional to the dielectric constant ⁇ of the dielectric (insulator) between the electrodes and the area S of the electrodes, and inversely proportional to the distance d between the electrodes.
- the capacitance-type pressure sensor 200 shown in FIGS. 15A and 15B is two electrodes separated from each other via an intermediate layer 104 which is a dielectric (insulator).
- the counter electrode 204 and the counter electrode 206 are configured.
- the counter electrode 204 constituting one electrode is used as a diaphragm 202 that is displaced by a change in pressure applied to the counter electrode 204.
- the distance d between the electrodes between the counter electrode 204 functioning as the diaphragm 202 and the counter electrode 206 constituting the other electrode is changed.
- the capacitance type pressure sensor 200 is formed between the electrodes between the counter electrode 204 and the counter electrode 206 due to a change in pressure applied to the counter electrode 204 functioning as the diaphragm 202.
- the distance d changes, it can be regarded as a variable capacitor whose capacitance C changes in inverse proportion to the distance d between the electrodes.
- one end of a wiring 208 is connected to the counter electrode 204, and one end of a wiring 210 is connected to the counter electrode 206.
- Each of 208 and 210 has its other end connected to a measurement control device (not shown).
- a voltage can be applied to the counter electrode 204 and the counter electrode 206 by the measurement control device via the wiring 208 and the wiring 206.
- the change in the distance d between the electrodes can be regarded as a change in the capacitance C in inverse proportion to the distance d between the electrodes.
- the capacitance applied to the counter electrode 204 at that time can be determined by measuring the capacitance C. Since it can be known, it can be used as a pressure sensor.
- a pressure sensor based on such a principle is generally called a “capacitance type pressure sensor”.
- a piezoresistor is generated by forming a strain gauge on the surface of the diaphragm and deforming the diaphragm due to external pressure.
- a piezoresistive pressure sensor configured to convert a change in electrical resistance due to an effect into a pressure.
- the “void 114” means a space formed by removing a part of the intermediate layer before being sealed with the sealing material
- the “cavity 118” means It means a space formed after being sealed with the sealing layer 116.
- the present invention eliminates the possibility of unnecessary sealing material invading into the gap and filling the gap unlike the conventional method of manufacturing a device member having a cavity. It is an object of the present invention to provide a device member having a desired function and a method for manufacturing the device member, which can form a cavity having a predetermined shape as an intended purpose by a simple process.
- the present invention when used as a device member of a capacitance-type pressure sensor, can have a diaphragm structure having a cavity with a predetermined shape inside, and a predetermined capacitance corresponding to a pressure change.
- An object of the present invention is to provide a highly accurate pressure sensor capable of measuring a change.
- the device member of the present invention is a device member having a cavity, A substrate member made of a semiconductor, an insulating intermediate layer formed on the upper surface of the substrate member, A semiconductor upper surface layer formed on the upper surface of the intermediate layer, an opening formed in the upper surface layer, and a gas permeable seal formed so as to seal the opening formed in the upper surface layer.
- the cavity is a cavity formed by removing the intermediate layer with an etching gas that permeates through the sealing layer.
- the device member manufacturing method of the present invention is a device member manufacturing method provided with a cavity, and includes a substrate member made of a semiconductor, an insulating intermediate layer formed on the upper surface of the substrate member, A step of preparing a device material comprising a semiconductor upper surface layer formed on the upper surface of the intermediate layer, a step of forming an opening in the upper surface layer, and an opening formed in the upper surface layer. A step of sealing with a gas-permeable sealing layer, and a step of forming a cavity by removing the intermediate layer by allowing an etching gas to pass through the gas-permeable sealing layer. It is characterized by that.
- the opening formed in the upper surface layer is sealed with a gas-permeable sealing layer, and the etching gas is allowed to pass through the sealing layer, so that the intermediate layer is formed.
- the cavity is formed by removing.
- the chemical reaction formula by the etching gas is expressed as follows. SiO 2 + 4HF (gas) ⁇ SiF 4 (gas) + H 2 O (gas)
- this sealing layer has a condition that HF gas as an etching gas must be absolutely permeable.
- gaseous SiF 4 and H 2 O pass through. That is, it is desirable that the sealing layer has gas permeability that allows gas generated by etching the intermediate layer with insulating gas to pass therethrough.
- the opening formed in the upper surface layer is sealed with a gas-permeable sealing layer, for example, the liquid capillarity is generated by spin-coating the sealing material with a liquid photoresist. Therefore, the entire opening is sealed with a gas-permeable sealing material. Therefore, it is not necessary to form a sealing layer under strict conditions as in the prior art, no complicated process is required, the manufacturing cost can be reduced, and the device member of excellent quality is extremely stable. Can be provided.
- the device member of the present invention is characterized in that a gas-impermeable protective film is provided on the upper surface of the sealing layer.
- the device member manufacturing method of the present invention is characterized by comprising a step of forming a gas-impermeable protective film.
- gas impermeable protective film is provided on the upper surface of the sealing layer, gas does not enter from the outside into the cavity of the device member, and the inside of the cavity may be contaminated. Absent.
- gas does not enter and exit from the cavity, the internal pressure in the cavity does not change, and a device member having an intended function can be provided.
- the device member of the present invention is characterized in that the cavity is in a vacuum state.
- the device member manufacturing method of the present invention is characterized in that the cavity is brought into a vacuum state by carrying out a step of forming a gas-impermeable protective film under vacuum conditions.
- vacuum includes an absolute vacuum, a state close to absolute vacuum, or a state in which the pressure is reduced as compared with the atmospheric pressure to the extent that there is no problem using the pressure sensor.
- a gas impermeable protection is applied to the upper surface of the sealing layer, for example, using a very simple process such as vacuum deposition of metal to evacuate the cavity.
- a film member can be formed, and a device member including a pressure reference chamber sealed in a vacuum state in which no impure gas or the like remains in the cavity can be provided.
- a capacitance type absolute pressure type pressure sensor can be easily manufactured at a low cost, and a pressure sensor having a more stable quality than the conventional one can be manufactured.
- the substrate member is Si
- the intermediate layer is SiO 2
- the upper surface layer is Si
- a method of manufacturing a device member of the present invention the device material, the substrate member is is Si, said intermediate layer is SiO 2, the upper surface layer is a Si, an SOI (Silicon On Insulator) wafer It is characterized by being.
- an SOI (Silicon On Insulator) wafer in which the substrate member is Si, the intermediate layer is SiO 2 , and the upper surface layer is Si is used as the device material.
- the thickness of the intermediate layer SiO 2 that is, the gap between the substrate member and the upper surface layer
- the step of forming an opening in the upper surface layer is performed by, for example, forming and developing a pattern comprising a portion exposed by photolithography and a portion not exposed, and then deeply RIE.
- An opening can be formed in the upper surface layer by etching using the (Deep Reactive Ion Etching) technique. Therefore, since photolithography is used, patterning is easy, and a predetermined pattern can be formed on the upper surface layer in a large amount with good reproducibility using this pattern.
- the opening formed in the upper surface layer is sealed with a gas permeable sealing layer, and, for example, HF gas is passed through the gas permeable sealing layer.
- the cavity can be easily formed by removing the intermediate layer by allowing the etching gas comprising
- the present invention is a capacitance type pressure sensor using any of the device members described above.
- the present invention is a capacitance-type pressure sensor using a device member obtained by any of the above-described device member manufacturing methods.
- a diaphragm structure having a cavity with a predetermined shape when used as a device member of a capacitance-type pressure sensor, a diaphragm structure having a cavity with a predetermined shape can be formed, and a predetermined static force corresponding to a pressure change can be obtained.
- a highly accurate pressure sensor that can measure a change in capacitance can be provided.
- the opening formed in the upper surface layer is sealed with the gas permeable sealing layer, and the intermediate layer is removed by allowing the etching gas to pass through the sealing layer. This forms a cavity.
- the opening formed in the upper surface layer is sealed with a gas-permeable sealing layer, for example, the liquid capillarity is generated by spin-coating the sealing material with a liquid photoresist. Therefore, the entire opening is sealed with a gas-permeable sealing material. Therefore, unlike the conventional case, when sealing with a sealing material, it is not necessary to form a sealing layer under severe conditions, a complicated process is unnecessary, and the manufacturing cost can be reduced. A device member of excellent quality can be provided extremely stably.
- FIG. 1 is a partially enlarged cross-sectional view of a device member having a cavity according to the present invention.
- FIG. 2 is a partially enlarged cross-sectional view illustrating a method for manufacturing a device member having a cavity according to the present invention.
- FIG. 3 is a partially enlarged cross-sectional view for explaining a method for producing a device member having a cavity according to the present invention.
- FIG. 4 is a partially enlarged cross-sectional view for explaining a method of manufacturing a device member having a cavity according to the present invention.
- FIG. 5 is a partially enlarged cross-sectional view for explaining a method of manufacturing a device member having a cavity according to the present invention.
- FIG. 1 is a partially enlarged cross-sectional view of a device member having a cavity according to the present invention.
- FIG. 2 is a partially enlarged cross-sectional view illustrating a method for manufacturing a device member having a cavity according to the present invention.
- FIG. 3 is a partially
- FIG. 6 is a partially enlarged cross-sectional view of another embodiment of a device member having a cavity according to the present invention.
- FIG. 7 is a partially enlarged cross-sectional view for explaining a method of manufacturing a device member having a cavity according to the present invention.
- FIG. 8 is a partially enlarged cross-sectional view for explaining a method for manufacturing a device member having a cavity according to the present invention.
- FIG. 9 is a partially enlarged cross-sectional view for explaining a method of manufacturing a device member having a conventional cavity.
- FIG. 10 is a partially enlarged cross-sectional view for explaining a method of manufacturing a device member having a conventional cavity.
- FIG. 10 is a partially enlarged cross-sectional view for explaining a method of manufacturing a device member having a conventional cavity.
- FIG. 11 is a partially enlarged cross-sectional view for explaining a method of manufacturing a device member having a conventional cavity.
- FIG. 12 is a partially enlarged cross-sectional view for explaining a method of manufacturing a device member having a conventional cavity.
- FIG. 13 is a partially enlarged cross-sectional view of a device member having a conventional cavity.
- FIG. 14 is a schematic diagram showing an outline when the device member 10 manufactured by the manufacturing method of the present invention is used as a capacitive pressure sensor.
- FIG. 15 is a schematic diagram showing an outline when the device member 100 manufactured by a conventional manufacturing method is used as a capacitance-type pressure sensor.
- FIG. 1 is a partially enlarged cross-sectional view of a device member having a cavity according to the present invention.
- reference numeral 10 denotes a device member having the cavity of the present invention as a whole.
- the device member 10 of the present invention includes a substrate member 12 made of a semiconductor, and an insulating intermediate layer 14 is formed on the upper surface of the substrate member 12.
- An upper surface layer 16 made of a semiconductor is formed on the upper surface of the intermediate layer 14.
- the upper surface layer 16 includes an opening 18 formed in a predetermined pattern shape, and a gas-permeable seal formed so as to seal the opening 18 formed in the upper surface layer 16.
- a layer 20 is provided.
- a cavity 22 is formed in a part of the intermediate layer 14 corresponding to the gas permeable sealing layer 20.
- the cavity 22 is formed by an etching gas that passes through the gas permeable sealing layer 20.
- the substrate member 12 may be made of, for example, a semiconductor such as Si, and may be appropriately selected depending on the application of the device member 10 and is not particularly limited.
- the intermediate layer 14 may be any material as long as it has an insulating property and can be etched by an etching gas that passes through the gas-permeable sealing layer 20, and can be selected as appropriate according to the type of etching gas used. Good.
- an etching gas for example, an oxide such as SiO 2 can be used as the intermediate layer 14.
- the upper surface layer 16 can use, for example, a semiconductor such as Si similarly to the substrate member 12, and may be appropriately selected according to the use of the device member 10, and is not particularly limited.
- the gas-permeable sealing layer 20 is not particularly limited as long as the gas-permeable sealing layer 20 can be appropriately selected according to the type of etching gas used.
- etching gas for example, a negative photoresist “SU-8 (trade name)” manufactured by Microchem is used. be able to.
- the cavity formation by the etching gas is represented by the following chemical reaction formula. SiO 2 + 4HF (gas) ⁇ SiF 4 (gas) + H 2 O (gas)
- the sealing layer 20 has a condition that HF gas as an etching gas must be absolutely transmitted. Furthermore, it is desirable that gaseous SiF 4 and H 2 O pass through the sealing layer 20. That is, it is desirable that the sealing layer 20 has gas permeability that allows gas generated when the intermediate layer 14 is etched by the etching gas to pass therethrough.
- the “gas permeability” of the “gas permeable sealing layer 20” allows the etching gas and all the gas generated when the intermediate layer 14 is etched by the etching gas to pass therethrough. It means that.
- the gas permeability required for the gas-permeable sealing layer 20 is, for example, an etching gas composed of HF gas, It is desirable that all reaction gases by etching such as SiF 4 gas and H 2 O gas can be transmitted.
- the substrate member 12 made of Si, the intermediate layer 14 made of SiO 2 formed on the upper surface of the substrate member 12, and the upper surface of the intermediate layer 14 are formed.
- a device material 1 made of an SOI (Silicon On Insulator) wafer composed of an upper surface layer 16 made of Si is prepared.
- a positive photoresist layer 24 is formed on the upper surface of the upper surface layer 16.
- the photoresist layer 24 is exposed with, for example, ultraviolet rays (UV) from the upper surface of the photoresist layer 24 through a photomask 26 having a predetermined pattern.
- development is performed with a developer such as TMAH (Tetra Methyl Ammonium Hydroxide).
- the exposed portion of the photoresist is removed, and the photoresist layer 24 remains in a predetermined pattern.
- the upper surface layer 16 is, for example, a “Bosch process” using a deep RIE (Deep Reactive Ion Etching) technique.
- the so-called “step of alternately performing etching with SF 6 and passivation with C 4 F 8 ” is carried out.
- openings 18 having the same pattern as the photoresist layer 24 remaining in a predetermined pattern are formed in the upper surface layer 16.
- FIG. 3C all the photoresist layers 24 are removed.
- a sealing material made of a negative photoresist “SU-8 (trade name)” manufactured by Microchem is applied to the upper surface of the upper surface layer 16.
- the gas permeable sealing layer 20 is formed by spin coating.
- SU-8 (trade name)
- SU-8 (trade name)
- SU-8 (trade name) is originally a liquid
- SU-8 (trade name)” is formed in the opening 18 formed in the upper surface layer 16 due to the capillary action of the liquid. 18 enters and is sealed, the entire opening 18 is sealed with a sealing material.
- SU-8 (trade name)” is exposed to, for example, ultraviolet rays (UV) through a photomask 28 having a predetermined pattern. Then, after baking at 95 ° C., development is performed with a developer such as PGMEA (Propylene Glycol Monomethyl Ether Acetate). As a result, as shown in FIG. 4C, the exposed portion of the sealing material “SU-8 (trade name)” remains, and the gas-permeable sealing layer 20 remains in a predetermined pattern. Will do.
- PGMEA Propylene Glycol Monomethyl Ether Acetate
- the device member 10 in which the cavity 22 is formed can be manufactured.
- a cavity 22 is formed between the upper surface layer 16 made of Si and the substrate member 12 made of Si. Therefore, by using the upper surface layer 16 as a diaphragm that is displaced by a change in pressure and as a counter electrode that constitutes one electrode, and by using the substrate member 12 as a counter electrode that constitutes the other electrode, Can be considered.
- FIG. 14 is a schematic diagram showing an outline when the device member 10 manufactured by the manufacturing method of the present invention is used as a capacitive pressure sensor.
- the pressure sensor 50 uses the upper surface layer 16 sealed with the sealing layer 20 as the diaphragm 52. Further, the diaphragm 52 is used as the counter electrode 54, and the substrate member 12 itself made of Si is also used as the counter electrode 56.
- the pressure sensor detects this pressure difference.
- the cavity 18 is sealed so that the inside of the cavity 18 is in a vacuum state, and the pressure reference chamber in which the pressure P1 in the cavity 18 is evacuated thereby constitutes an absolute pressure type pressure. It is a sensor.
- the capacitance C of a general capacitor composed of two electrodes separated from each other via a dielectric (insulator) is expressed by the following equation.
- ⁇ represents the dielectric constant of the dielectric (insulator) between the electrodes
- S represents the area of the electrode
- d represents the distance between the electrodes.
- the capacitance C is proportional to the dielectric constant ⁇ of the dielectric (insulator) between the electrodes and the area S of the electrodes, and inversely proportional to the distance d between the electrodes.
- the capacitance-type pressure sensor 50 shown in FIGS. 14A and 14B is also two electrodes separated from each other via the intermediate layer 14 which is a dielectric (insulator).
- the counter electrode 54 and the counter electrode 56 are configured.
- the counter electrode 54 constituting one electrode is used as a diaphragm 52 that is displaced by a change in pressure applied to the counter electrode 54.
- the distance d between the electrodes between the counter electrode 54 functioning as the diaphragm 52 and the counter electrode 56 constituting the other electrode is changed.
- the capacitance type pressure sensor 50 is formed by the change in pressure applied to the counter electrode 54 functioning as the diaphragm 52 between the electrodes between the counter electrode 54 and the counter electrode 56.
- the distance d changes, it can be regarded as a variable capacitor whose capacitance C changes in inverse proportion to the distance d between the electrodes.
- one end of a wiring 58 is connected to the counter electrode 54, and one end of a wiring 60 is connected to the counter electrode 56.
- Each of 58 and 60 has its other end connected to a measurement control device (not shown).
- a voltage can be applied to the counter electrode 54 and the counter electrode 56 by the measurement control device via the wiring 58 and the wiring 56.
- the change in the distance d between the electrodes can be regarded as a change in the capacitance C in inverse proportion to the distance d between the electrodes.
- the pressure applied to the counter electrode 54 functioning as the diaphragm 52 can be determined. Since it can be known, it can be used as a pressure sensor.
- a pressure sensor based on such a principle is generally called a “capacitance type pressure sensor”.
- a piezoresistor is generated by forming a strain gauge on the surface of the diaphragm and deforming the diaphragm due to external pressure.
- the present invention can also be applied to a piezoresistive pressure sensor configured to convert a change in electrical resistance due to an effect into a pressure.
- the opening 18 formed in the upper surface layer 16 is sealed with the gas permeable sealing layer 20, and the etching gas is allowed to pass through the gas permeable sealing layer 20.
- the cavity 22 is formed in the intermediate layer 14.
- the cavity 22 having a predetermined shape as the intended purpose can be formed by a simple process, and the device member 10 having the intended function can be provided.
- the opening 18 formed in the upper surface layer 16 is sealed, for example, by spin coating using a liquid photoresist as a sealing material, the opening 18 enters and is sealed by a liquid capillary phenomenon. Therefore, the entire opening 18 is sealed with the gas permeable sealing layer 20. Therefore, unlike the conventional case, when sealing with a sealing material, it is not necessary to form a sealing layer under severe conditions, a complicated process is unnecessary, and the manufacturing cost can be reduced.
- the device member 10 of excellent quality can be provided extremely stably.
- an SOI (Silicon On Insulator) wafer in which the substrate member 12 is Si, the intermediate layer 14 is SiO 2 , and the upper surface layer 16 is Si is used as a device material.
- the thickness of SiO 2 that is the intermediate layer 14 can be easily made constant in the wafer manufacturing process. it can.
- SOI Silicon On Insulator
- the SiO 2 that is the intermediate layer 14 is removed, so that the cavity 22 is formed between the substrate member 12 and the upper surface layer 16.
- a gap 22 with small gap variation and a uniform gap can be formed.
- SOI (Silicon On Insulator) wafers can be obtained in large quantities with uniform quality and are versatile, and the manufacturing method can be simplified, so that the manufacturing cost can be reduced.
- the step of forming the opening 18 in the upper surface layer 16 is performed by, for example, forming and developing a pattern including a portion exposed by photolithography and a portion not exposed.
- the opening 18 can be formed in the upper surface layer 16 by etching using a deep RIE (Deep Reactive Ion Etching) technique. Therefore, since photolithography is used, patterning is easy, and a predetermined pattern can be formed on the upper surface layer 16 in large quantities and with good reproducibility using this pattern.
- the intermediate layer 14 is made of SiO 2 , the opening 18 formed in the upper surface layer 16 is sealed with the gas permeable sealing layer 20, and the gas permeable sealing layer 20 is etched.
- the gas permeate for example, by etching the intermediate layer 14 using HF gas, a part of the intermediate layer 14 can be removed, and the cavity 22 can be easily formed in a predetermined pattern. .
- FIG. 6 is a partially enlarged cross-sectional view of another embodiment of a device member having a cavity according to the present invention.
- the device member 10 of this embodiment has basically the same configuration as that of the device member 10 shown in FIG. 1, and the same components are denoted by the same reference numerals and detailed description thereof is omitted. To do.
- the device member 10 of this embodiment includes a gas impermeable protective film 30 on the upper surface of the gas permeable sealing layer 20, as shown in FIG.
- the gas-impermeable protective film 30 may be appropriately selected according to the use of the device member 10 and is not particularly limited.
- a metal such as aluminum, polysilicon, or the like by vapor deposition or the like. It can be formed using a semiconductor such as, a resin such as parylene.
- gas impermeable of “gas impermeable protective film 30” means that gas penetrates into the cavity 22 from the outside through the protective film 30 and the gas permeable sealing layer 20. It means not. As a result, the inside of the cavity 22 is not contaminated, the gas in the cavity 22 does not enter and exit, and the internal pressure in the cavity 22 does not change.
- the film thickness of the protective film 30 may be appropriately selected according to the use of the device member 10 and is not particularly limited.
- the film thickness is 100 nm to 5 ⁇ m, and preferably the protective film 30 is aluminum.
- the range of 2 ⁇ m to 5 ⁇ m is desirable to prevent the gas from entering the cavity 22.
- the gas impermeable protective film 30 is provided on the upper surface of the sealing layer 20, gas does not enter the cavity 22 of the device member 10 from the outside, The inside of the cavity 22 is not contaminated. Further, since the gas in and out of the cavity 22 is eliminated, the internal pressure in the cavity 22 does not change, and the device member 10 having an expected function can be provided.
- the cavity 22 is in a vacuum state. That is, it is desirable that the cavity 22 be in a vacuum state by performing a step of forming the gas impermeable protective film 30 under vacuum conditions.
- vacuum includes an absolute vacuum, a state close to absolute vacuum, or a state in which the pressure is reduced as compared with the atmospheric pressure to the extent that there is no problem using the pressure sensor.
- a gas impermeable property is formed on the upper surface of the sealing layer 20 by using a very simple process such as vacuum deposition of metal.
- the protective member 30 can be formed, and the device member 10 including the pressure reference chamber sealed in a vacuum state in which no impurity gas or the like remains in the cavity 22 can be provided.
- a capacitance type absolute pressure type pressure sensor can be easily manufactured at a low cost, and a pressure sensor having a more stable quality than the conventional one can be manufactured.
- the manufacturing method of the device member 10 of the first embodiment and the steps shown in FIGS. 2 to 5 are the same.
- a part of the intermediate layer 14 is removed by allowing the gas permeable sealing layer 20 to permeate the etching gas, thereby etching the intermediate layer 14 to obtain a predetermined pattern.
- the cavity 22 is formed.
- a metal such as aluminum, a semiconductor such as polysilicon, a resin such as parylene, or the like is used on the upper surface of the gas-permeable sealing layer 20 by, for example, vapor deposition.
- the protective film 30 is formed.
- a positive photoresist layer 32 is spin-coated on the upper surface of the protective film 30.
- the photoresist layer 32 is exposed with, for example, ultraviolet rays (UV) from the upper surface of the photoresist layer 32 through a photomask 34 having a predetermined pattern.
- development is performed with a developer such as TMAH (Tetra Methyl Ammonium Hydroxide).
- the exposed portion of the photoresist is removed, and the photoresist layer 32 remains in a predetermined pattern.
- the upper surface layer 16 is protected to a predetermined pattern by performing an etching process using, for example, an aluminum etchant such as a mixed acid, using the photoresist layer 32 as a mask.
- an aluminum etchant such as a mixed acid
- the film 30 is removed. Thereafter, all the photoresist layer 32 is removed.
- the device member 10 including the gas impermeable protective film 30 on the upper surface of the sealing layer 20 can be manufactured.
- the device member 10 provided with the gas-impermeable protective film 30 was manufactured. That is, as shown in FIG. 2A, the substrate member 12 made of Si, the intermediate layer 14 made of SiO 2 formed on the upper surface of the substrate member 12, and the upper surface of the intermediate layer 14 were formed. A device material 1 made of an SOI (Silicon On Insulator) wafer composed of an upper surface layer 16 made of Si was prepared.
- SOI Silicon On Insulator
- This device material 1 was washed with ammonia perwater. Further, it was washed with an HF aqueous solution (diluted to 1/100) for 1 min. Then, a primer is applied to the upper surface of the upper surface layer 16 of the device material 1, and a positive type made by Shipley (SHIPLEY) is applied to the upper surface of the upper surface layer 16 as shown in FIG.
- a photoresist layer 24 was formed by spin coating at 4000 rpm / 30 sec using a photoresist “S1805G (trade name)”.
- the photoresist layer 24 was exposed to ultraviolet rays (UV) for 3 seconds from the upper surface of the photoresist layer 24 through a photomask 26 having a predetermined pattern. Thereafter, development was performed for 1 min with TMAH (Tetra Methyl Ammonium Hydroxide) (developer “NMD-3 (trade name)” manufactured by Tokyo Ohka Kogyo Co., Ltd.).
- TMAH Tetra Methyl Ammonium Hydroxide
- the exposed portion of the photoresist is removed, and the photoresist layer 24 remains in a predetermined pattern.
- the upper surface layer 16 is called a “Bosch process” using a deep RIE (Deep Reactive Ion Etching) technique. “The process of alternately performing etching with SF 6 and passivation with C 4 F 8 ” was carried out. Thus, openings 18 having the same pattern as the photoresist layer 24 remaining in a predetermined pattern were formed in the upper surface layer 16.
- SU-8 (trade name) is originally a liquid
- SU-8 (trade name) is formed in the opening 18 formed in the upper surface layer 16 due to the capillary action of the liquid. 18 enters and is sealed, the entire opening 18 is sealed with a sealing material.
- FIG. 4B “SU-8 (trade name)” was exposed to ultraviolet rays (UV) for 30 seconds through a photomask 28 having a predetermined pattern.
- a part of the intermediate layer 14 is removed by allowing the gas-permeable sealing layer 20 to pass through HF gas, which is an etching gas, for 20 minutes.
- HF gas which is an etching gas
- a protective film 30 having a thickness of 200 nm was formed on the upper surface of the gas-permeable sealing layer 20 by vacuum deposition using aluminum. Then, a primer is applied to the upper surface of the protective film 30, and as shown in FIG. 7B, a positive photoresist “S1818G manufactured by Shipley (SHIPLEY) is applied to the upper surface of the protective film 30. (Product name) was spin-coated at 3000 rpm / 30 sec to form a photoresist layer 32.
- the photoresist layer 32 was exposed to ultraviolet rays (UV) for 3 seconds from the upper surface of the photoresist layer 32 through a photomask 34 having a predetermined pattern. Thereafter, development was performed for 1 min with TMAH (Tetra Methyl Ammonium Hydroxide) (developer “NMD-3 (trade name)” manufactured by Tokyo Ohka Kogyo Co., Ltd.). As a result, as shown in FIG. 8A, the exposed portion of the photoresist is removed, and the photoresist layer 32 remains in a predetermined pattern.
- TMAH Tetra Methyl Ammonium Hydroxide
- the upper surface layer 16 is etched for 3 minutes using an aluminum etchant (aluminum mixed acid) using the photoresist layer 32 as a mask to form a predetermined pattern.
- the protective film 30 was removed. Thereafter, all the photoresist layer 32 was removed.
- the device member 10 including the gas impermeable protective film 30 on the upper surface of the sealing layer 20 could be manufactured.
- this device member 10 was used to conduct an experiment as an absolute pressure type pressure sensor, it was clear that the relationship between pressure and capacitance had a linear correlation, and the pressure sensor was reliable. Met.
- the device member 10 of the present invention can be used for, for example, a capacitance-type pressure sensor, an ink jet printer head, a microchannel device used in medical treatment, biotechnology, and the like. Various modifications can be made without departing from the object of the present invention.
- the present invention belongs to the technical field of MEMS (Micro Electro Mechanical Systems), and relates to a device member having a cavity and a method for manufacturing the device member having a cavity.
- the device member provided with such a cavity can be used as, for example, a capacitance type pressure sensor, an ink jet printer head, a microchannel device used in medical treatment, biotechnology, or the like.
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Abstract
Description
このようなキャビティーを備えたデバイス部材は、例えば、静電容量型の圧力センサ、インクジェットプリンターヘッド、医療やバイオテクノロジーなどに用いられるマイクロ流路デバイスなどとして利用することができる。
その後、例えば、TMAH(Tetra Methyl Ammonium Hydroxide)などの現像液により現像する。この結果、図10(A)に示したように、露光された部分のフォトレジストが除去され、フォトレジスト層108が所定のパターンで残存することになる。
その後、全てのフォトレジスト層120を除去することによって、図13に示したように、所定のパターンに封止層116が形成されたデバイス部材100が得られる。
図15に示したように、圧力センサ200は、ダイヤフラム202として、上記の封止層116で封止された上面層106を用いている。また、ダイヤフラム202は対向電極204として使用されるとともに、Siからなる基板部材102自体も対向電極206として使用される。
また、キャビティー118内が真空の状態となるようにキャビティー118を封止し、これにより、キャビティー118内の圧力P1が真空となる圧力基準室として構成したものが、絶対圧力式の圧力センサである。
これにより、これらの配線208、配線206を介して、測定制御装置によって対向電極204、対向電極206に対して電圧を印加することができるように構成されている。
半導体からなる基板部材と、前記基板部材の上面に形成された絶縁性を有する中間層と、
前記中間層の上面に形成された半導体からなる上面層と、前記上面層に形成された開口部と、前記上面層に形成された開口部を封止するように形成されたガス透過性の封止層とを備え、前記キャビティーが、前記封止層を介して透過するエッチングガスによって、前記中間層を除去することにより形成されたキャビティーであることを特徴とする。
SiO2+4HF(gas)→SiF4(gas)+H2O(gas)
すなわち、この封止層は、絶縁性を有する中間層が、エッチングガスによりエッチングされて発生するガスも透過させるガス透過性を有するのが望ましい。
従って、従来のように、厳しい条件で封止層を形成する必要がなく、また、複雑な工程が不要で、製造コストを低減することができ、しかも、極めて安定的に優れた品質のデバイス部材を提供することができる。
このようなSOI(Silicon On Insulator)ウェハーは、そのウェハー製造工程において、中間層SiO2の厚さ(すなわち、基板部材と上面層間のギャップ)を容易に一定とすることができる。
さらに、SOI(Silicon On Insulator)ウェハーは、均一な品質のものを大量に得ることができ汎用性があり、製造方法が簡単に済むため、製造コストも低減することができる。
従って、フォトリソグラフィーを用いているので、パターン化が容易であり、このパターンを用いて大量に、しかも、良好な再現性をもって上面層に所定のパターンを形成することができる。
従って、従来のように、封止材で封止する際に、厳しい条件で封止層を形成する必要がなく、また、複雑な工程が不要で、製造コストを低減することができ、しかも、極めて安定的に優れた品質のデバイス部材を提供することができる。
SiO2+4HF(gas) →SiF4(gas)+H2O(gas)
すなわち、封止層20は、中間層14が、エッチングガスによりエッチングされる際に発生するガスも透過させるガス透過性を有するのが望ましい。
図14に示したように、圧力センサ50は、ダイヤフラム52として、上記の封止層20で封止された上面層16を用いている。また、ダイヤフラム52は対向電極54として使用されるとともに、Siからなる基板部材12自体も対向電極56として使用される。
また、キャビティー18内が真空の状態となるようにキャビティー18を封止し、これにより、キャビティー18内の圧力P1が真空となる圧力基準室として構成したものが、絶対圧力式の圧力センサである。
これにより、これらの配線58、配線56を介して、測定制御装置によって対向電極54、対向電極56に対して電圧を印加することができるように構成されている。
従って、従来のように、封止材で封止する際に、厳しい条件で封止層を形成する必要がなく、また、複雑な工程が不要で、製造コストを低減することができ、しかも、極めて安定的に優れた品質のデバイス部材10を提供することができる。
このようなSOI(Silicon On Insulator)ウェハーは、そのウェハー製造工程において、中間層14であるSiO2の厚さ(すなわち、基板部材12と上面層16間のギャップ)を容易に一定とすることができる。
さらに、SOI(Silicon On Insulator)ウェハーは、均一な品質のものを大量に得ることができ汎用性があり、製造方法が簡単に済むため、製造コストも低減することができる。
従って、フォトリソグラフィーを用いているので、パターン化が容易であり、このパターンを用いて大量に、しかも、良好な再現性をもって上面層16に所定のパターンを形成することができる。
その後、図7(A)に示したように、このガス透過性の封止層20の上面に、例えば、蒸着などによって、アルミニウムなどの金属、ポリシリコンなどの半導体、パリレンなどの樹脂などを用いて、保護膜30を形成する。
すなわち、図2(A)に示したように、Siからなる基板部材12と、この基板部材12の上面に形成された、SiO2からなる中間層14と、中間層14の上面に形成された、Siからなる上面層16とから構成される、SOI(Silicon On Insulator)ウェハーからなるデバイス材料1を用意した。
そして、デバイス材料1の上面層16の上面に、プライマーを塗布し、その上面に、図2(B)に示したように、上面層16の上面に、シップレイ(SHIPLEY)社製のポジ型のフォトレジスト「S1805G(商品名)」を用いて、4000rpm/30secでスピンコートすることによって、フォトレジスト層24を形成した。
その後、TMAH(Tetra Methyl Ammonium Hydroxide)(東京応化工業株式会社製の現像液「NMD-3(商品名)」)により、1min、現像を行った。
次に、図4(B)に示したように、所定のパターンのフォトマスク28を介して、「SU-8(商品名)」を、30sec、紫外線(UV)で露光した。
そして、保護膜30の上面に、プライマーを塗布し、その上面に、図7(B)に示したように、保護膜30の上面に、シップレイ(SHIPLEY)社製のポジ型のフォトレジスト「S1818G(商品名)」を、3000rpm/30secでスピンコートすることによって、フォトレジスト層32を形成した。
その後、TMAH(Tetra Methyl Ammonium Hydroxide)(東京応化工業株式会社製の現像液「NMD-3(商品名)」)により、1min、現像を行った。
これにより、図8(A)に示したように、露光された部分のフォトレジストが除去され、フォトレジスト層32が所定のパターンで残存することになる。
このデバイス部材10を用いて、絶対圧力式の圧力センサとして用いて実験を行ったところ、圧力と静電容量との関係が、リニアな相関関係があり、圧力センサとして信頼性を有することが明らかであった。
このようなキャビティーを備えたデバイス部材は、例えば、静電容量型の圧力センサ、インクジェットプリンターヘッド、医療やバイオテクノロジーなどに用いられるマイクロ流路デバイスなどとして利用することができる。
10 デバイス部材
12 基板部材
14 中間層
16 上面層
18 開口部
20 封止層
22 キャビティー
24 フォトレジスト層
26 フォトマスク
28 フォトマスク
30 保護膜
32 フォトレジスト層
34 フォトマスク
50 圧力センサ
52 ダイヤフラム
54、56 対向電極
58、60 配線
100 デバイス材料
102 基板部材
104 中間層
106 上面層
108 フォトレジスト層
110 フォトマスク
112 開口部
114 空隙
116 封止層
118 キャビティー
120 フォトレジスト層
122 フォトマスク
200 圧力センサ
202 ダイヤフラム
204、206 対向電極
208、210 配線
Claims (10)
- キャビティーを備えたデバイス部材であって、
半導体からなる基板部材と、
前記基板部材の上面に形成された絶縁性を有する中間層と、
前記中間層の上面に形成された半導体からなる上面層と、
前記上面層に形成された開口部と、
前記上面層に形成された開口部を封止するように形成されたガス透過性の封止層とを備え、
前記キャビティーが、前記封止層を介して透過するエッチングガスによって、前記中間層を除去することにより形成されたキャビティーであることを特徴とするデバイス部材。 - 前記封止層の上面に、ガス不透過性の保護膜を備えることを特徴とする請求項1に記載のデバイス部材。
- 前記キャビティーが、真空の状態であることを特徴とする請求項2に記載のデバイス部材。
- 前記基板部材がSiであり、前記中間層がSiO2であり、前記上面層がSiであることを特徴とする請求項1から3のいずれかに記載のデバイス部材。
- 請求項1から4のいずれかに記載のデバイス部材を用いたことを特徴とする静電容量型の圧力センサ。
- キャビティーを備えたデバイス部材の製造方法であって、
半導体からなる基板部材と、
前記基板部材の上面に形成された絶縁性を有する中間層と、
前記中間層の上面に形成された半導体からなる上面層とを備えたデバイス材料を用意する工程と、
前記上面層に、開口部を形成する工程と、
前記上面層に形成された開口部を、ガス透過性の封止層で封止する工程と、
前記ガス透過性の封止層を介して、エッチングガスを透過させることにより、前記中間層を除去してキャビティーを形成する工程と、
を備えることを特徴とするデバイス部材の製造方法。 - 前記封止層の上面に、ガス不透過性の保護膜を形成する工程を備えることを特徴とする請求項6に記載のデバイス部材の製造方法。
- 真空条件下で、ガス不透過性の保護膜を形成する工程を実施することによって、前記キャビティーを、真空の状態とすることを特徴とする請求項7に記載のデバイス部材の製造方法。
- 前記デバイス材料が、前記基板部材がSiであり、前記中間層がSiO2であり、前記上面層がSiであるSOI(Silicon On Insulator)ウェハーであることを特徴とする請求項6から8のいずれかに記載のデバイス部材の製造方法。
- 請求項6から9のいずれかに記載のデバイス部材の製造方法によって得られたデバイス部材を用いたことを特徴とする静電容量型の圧力センサ。
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CN201380049578.XA CN104662399B (zh) | 2012-09-25 | 2013-06-18 | 具备内腔的设备部件以及具备内腔的设备部件的制造方法 |
JP2014538229A JP5831728B2 (ja) | 2012-09-25 | 2013-06-18 | キャビティーを備えたデバイス部材およびキャビティーを備えたデバイス部材の製造方法 |
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US (1) | US9726563B2 (ja) |
JP (1) | JP5831728B2 (ja) |
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DE102017010404A1 (de) | 2016-11-14 | 2018-05-17 | Yokogawa Electric Corporation | Vibrationswandler |
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WO2016117203A1 (ja) * | 2015-01-23 | 2016-07-28 | 三菱電機株式会社 | セラミックス基板、接合体、モジュール、およびセラミックス基板の製造方法 |
CN107607250B (zh) * | 2016-07-11 | 2020-04-10 | 美特科技(苏州)有限公司 | 一种气压量测装置及气压量测方法 |
CN109374194B (zh) * | 2018-11-22 | 2020-05-19 | 华中科技大学 | 一种参考压力可调的柔性压力传感器阵列及其制备方法 |
DE102019102836B4 (de) | 2019-02-05 | 2023-02-02 | Infineon Technologies Ag | Verfahren mit panel-bonding-handlungen und elektronische vorrichtungen mit hohlräumen |
US11851323B2 (en) * | 2019-08-26 | 2023-12-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device comprising different types of microelectromechanical systems devices |
DE102021205736A1 (de) * | 2021-06-08 | 2022-12-08 | Robert Bosch Gesellschaft mit beschränkter Haftung | Mikromechanisches Bauteil für eine Sensorvorrichtung |
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JP2004260187A (ja) * | 2003-02-26 | 2004-09-16 | Robert Bosch Gmbh | 圧力センサ装置およびその製造方法 |
JP3745648B2 (ja) * | 2001-06-06 | 2006-02-15 | 日本電信電話株式会社 | 微細構造の製造方法 |
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JP2006211296A (ja) * | 2005-01-28 | 2006-08-10 | Sony Corp | マイクロマシンの製造方法およびマイクロマシン |
CN101114591A (zh) * | 2006-07-25 | 2008-01-30 | 杭州科岛微电子有限公司 | 压容式传感器基片成腔方法 |
US9254998B2 (en) * | 2013-03-11 | 2016-02-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | MEMS device with a capping substrate |
US9382111B2 (en) * | 2014-06-26 | 2016-07-05 | Infineon Technologies Dresden Gmbh | Micromechanical system and method for manufacturing a micromechanical system |
US9376314B2 (en) * | 2014-06-26 | 2016-06-28 | Infineon Technologies Dresden Gmbh | Method for manufacturing a micromechanical system |
US10439118B2 (en) * | 2014-12-04 | 2019-10-08 | Maxim Integrated Products, Inc. | MEMS-based wafer level packaging for thermo-electric IR detectors |
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JP3745648B2 (ja) * | 2001-06-06 | 2006-02-15 | 日本電信電話株式会社 | 微細構造の製造方法 |
JP2004260187A (ja) * | 2003-02-26 | 2004-09-16 | Robert Bosch Gmbh | 圧力センサ装置およびその製造方法 |
Cited By (2)
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DE102017010404A1 (de) | 2016-11-14 | 2018-05-17 | Yokogawa Electric Corporation | Vibrationswandler |
US10447231B2 (en) | 2016-11-14 | 2019-10-15 | Yokogawa Electric Corporation | Vibration transducer |
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JPWO2014050229A1 (ja) | 2016-08-22 |
JP5831728B2 (ja) | 2015-12-09 |
US20150211949A1 (en) | 2015-07-30 |
CN104662399B (zh) | 2016-10-26 |
CN104662399A (zh) | 2015-05-27 |
US9726563B2 (en) | 2017-08-08 |
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