WO2014048991A3 - Optoelektronisches bauelement mit einer schichtstruktur - Google Patents
Optoelektronisches bauelement mit einer schichtstruktur Download PDFInfo
- Publication number
- WO2014048991A3 WO2014048991A3 PCT/EP2013/069973 EP2013069973W WO2014048991A3 WO 2014048991 A3 WO2014048991 A3 WO 2014048991A3 EP 2013069973 W EP2013069973 W EP 2013069973W WO 2014048991 A3 WO2014048991 A3 WO 2014048991A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer structure
- layer
- optoelectronic component
- aluminum
- gallium nitride
- Prior art date
Links
- 230000005693 optoelectronics Effects 0.000 title abstract 2
- 229910002601 GaN Inorganic materials 0.000 abstract 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract 3
- 229910052782 aluminium Inorganic materials 0.000 abstract 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 3
- 150000004767 nitrides Chemical class 0.000 abstract 3
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Led Devices (AREA)
Abstract
Ein optoelektronisches Bauelement (10) umfasst eine Schichtstruktur (100), die eine erste Galliumnitridschicht (140) und eine aluminiumhaltige Nitridzwischenschicht (150) aufweist. Dabei grenzt die aluminiumhaltige Nitridzwischenschicht (150) an die erste Galliumnitridschicht (140) an. Außerdem weist die Schichtstruktur (100) eine undotierte zweite Galliumnitridschicht (160) auf die an die aluminiumhaltige Nitridzwischenschicht (150) angrenzt.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/427,687 US9685589B2 (en) | 2012-09-27 | 2013-09-25 | Optoelectronic component with a layer structure |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102012217631.4 | 2012-09-27 | ||
DE102012217631.4A DE102012217631B4 (de) | 2012-09-27 | 2012-09-27 | Optoelektronisches Bauelement mit einer Schichtstruktur |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2014048991A2 WO2014048991A2 (de) | 2014-04-03 |
WO2014048991A3 true WO2014048991A3 (de) | 2014-05-30 |
Family
ID=49263310
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2013/069973 WO2014048991A2 (de) | 2012-09-27 | 2013-09-25 | Optoelektronisches bauelement mit einer schichtstruktur |
Country Status (3)
Country | Link |
---|---|
US (1) | US9685589B2 (de) |
DE (1) | DE102012217631B4 (de) |
WO (1) | WO2014048991A2 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102014105303A1 (de) | 2014-04-14 | 2015-10-15 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Schichtstruktur als Pufferschicht eines Halbleiterbauelements sowie Schichtstruktur als Pufferschicht eines Halbleiterbauelements |
CN106098748B (zh) * | 2016-06-30 | 2019-09-17 | 江苏能华微电子科技发展有限公司 | 二极管用外延片及其制备方法 |
CN106098798A (zh) * | 2016-06-30 | 2016-11-09 | 江苏能华微电子科技发展有限公司 | 肖特基二极管用外延片及其制备方法 |
CN106098746A (zh) * | 2016-06-30 | 2016-11-09 | 江苏能华微电子科技发展有限公司 | 一种二极管用外延片及其制备方法 |
CN106098793A (zh) * | 2016-06-30 | 2016-11-09 | 江苏能华微电子科技发展有限公司 | 肖特基二极管用外延片及其制备方法 |
CN113451450B (zh) * | 2020-08-06 | 2022-04-29 | 重庆康佳光电技术研究院有限公司 | Led磊晶结构及其制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100244096A1 (en) * | 2009-03-26 | 2010-09-30 | Sanken Electric Co., Ltd. | Semiconductor device |
EP2434532A1 (de) * | 2010-09-28 | 2012-03-28 | Samsung Electronics Co., Ltd. | Halbleitervorrichtung und Verfahren zu deren Herstellung |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10151092B4 (de) * | 2001-10-13 | 2012-10-04 | Azzurro Semiconductors Ag | Verfahren zur Herstellung von planaren und rißfreien Gruppe-III-Nitrid-basierten Lichtemitterstrukturen auf Silizium Substrat |
US6818061B2 (en) | 2003-04-10 | 2004-11-16 | Honeywell International, Inc. | Method for growing single crystal GaN on silicon |
KR100765004B1 (ko) * | 2004-12-23 | 2007-10-09 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
EP2112699B1 (de) | 2006-02-23 | 2020-05-06 | ALLOS Semiconductors GmbH | Nitridhalbleiter-Bauelement und Verfahren zu seiner Herstellung |
US7825432B2 (en) * | 2007-03-09 | 2010-11-02 | Cree, Inc. | Nitride semiconductor structures with interlayer structures |
CN102045127B (zh) * | 2009-10-23 | 2014-12-10 | 华为技术有限公司 | 光解偏振复用的接收装置、发送装置、系统及方法 |
GB2485418B (en) * | 2010-11-15 | 2014-10-01 | Dandan Zhu | Semiconductor materials |
DE102011114665B4 (de) | 2011-09-30 | 2023-09-21 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines optoelektronischen Nitrid-Verbindungshalbleiter-Bauelements |
US8946773B2 (en) * | 2012-08-09 | 2015-02-03 | Samsung Electronics Co., Ltd. | Multi-layer semiconductor buffer structure, semiconductor device and method of manufacturing the semiconductor device using the multi-layer semiconductor buffer structure |
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2012
- 2012-09-27 DE DE102012217631.4A patent/DE102012217631B4/de active Active
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2013
- 2013-09-25 US US14/427,687 patent/US9685589B2/en active Active
- 2013-09-25 WO PCT/EP2013/069973 patent/WO2014048991A2/de active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100244096A1 (en) * | 2009-03-26 | 2010-09-30 | Sanken Electric Co., Ltd. | Semiconductor device |
EP2434532A1 (de) * | 2010-09-28 | 2012-03-28 | Samsung Electronics Co., Ltd. | Halbleitervorrichtung und Verfahren zu deren Herstellung |
Non-Patent Citations (1)
Title |
---|
KROST A ET AL: "GaN-based epitaxy on silicon: stress measurements", PHYSICA STATUS SOLIDI. A: APPLIED RESEARCH, WILEY - VCH VERLAG, BERLIN, DE, vol. 200, no. 1, 1 November 2003 (2003-11-01), pages 26 - 35, XP002435960, ISSN: 0031-8957 * |
Also Published As
Publication number | Publication date |
---|---|
WO2014048991A2 (de) | 2014-04-03 |
US20150228858A1 (en) | 2015-08-13 |
US9685589B2 (en) | 2017-06-20 |
DE102012217631A1 (de) | 2014-03-27 |
DE102012217631B4 (de) | 2022-05-25 |
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