WO2014048991A3 - Optoelektronisches bauelement mit einer schichtstruktur - Google Patents

Optoelektronisches bauelement mit einer schichtstruktur Download PDF

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Publication number
WO2014048991A3
WO2014048991A3 PCT/EP2013/069973 EP2013069973W WO2014048991A3 WO 2014048991 A3 WO2014048991 A3 WO 2014048991A3 EP 2013069973 W EP2013069973 W EP 2013069973W WO 2014048991 A3 WO2014048991 A3 WO 2014048991A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer structure
layer
optoelectronic component
aluminum
gallium nitride
Prior art date
Application number
PCT/EP2013/069973
Other languages
English (en)
French (fr)
Other versions
WO2014048991A2 (de
Inventor
Werner Bergbauer
Philipp Drechsel
Peter Stauss
Patrick Rode
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Priority to US14/427,687 priority Critical patent/US9685589B2/en
Publication of WO2014048991A2 publication Critical patent/WO2014048991A2/de
Publication of WO2014048991A3 publication Critical patent/WO2014048991A3/de

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26Materials of the light emitting region
    • H01L33/30Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H01L33/325Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • H01L21/02455Group 13/15 materials
    • H01L21/02458Nitrides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02373Group 14 semiconducting materials
    • H01L21/02381Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • H01L21/02488Insulating materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02494Structure
    • H01L21/02496Layer structure
    • H01L21/02505Layer structure consisting of more than two layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02538Group 13/15 materials
    • H01L21/0254Nitrides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0062Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025Physical imperfections, e.g. particular concentration or distribution of impurities
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26Materials of the light emitting region
    • H01L33/30Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)

Abstract

Ein optoelektronisches Bauelement (10) umfasst eine Schichtstruktur (100), die eine erste Galliumnitridschicht (140) und eine aluminiumhaltige Nitridzwischenschicht (150) aufweist. Dabei grenzt die aluminiumhaltige Nitridzwischenschicht (150) an die erste Galliumnitridschicht (140) an. Außerdem weist die Schichtstruktur (100) eine undotierte zweite Galliumnitridschicht (160) auf die an die aluminiumhaltige Nitridzwischenschicht (150) angrenzt.
PCT/EP2013/069973 2012-09-27 2013-09-25 Optoelektronisches bauelement mit einer schichtstruktur WO2014048991A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/427,687 US9685589B2 (en) 2012-09-27 2013-09-25 Optoelectronic component with a layer structure

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102012217631.4 2012-09-27
DE102012217631.4A DE102012217631B4 (de) 2012-09-27 2012-09-27 Optoelektronisches Bauelement mit einer Schichtstruktur

Publications (2)

Publication Number Publication Date
WO2014048991A2 WO2014048991A2 (de) 2014-04-03
WO2014048991A3 true WO2014048991A3 (de) 2014-05-30

Family

ID=49263310

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2013/069973 WO2014048991A2 (de) 2012-09-27 2013-09-25 Optoelektronisches bauelement mit einer schichtstruktur

Country Status (3)

Country Link
US (1) US9685589B2 (de)
DE (1) DE102012217631B4 (de)
WO (1) WO2014048991A2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014105303A1 (de) 2014-04-14 2015-10-15 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Schichtstruktur als Pufferschicht eines Halbleiterbauelements sowie Schichtstruktur als Pufferschicht eines Halbleiterbauelements
CN106098748B (zh) * 2016-06-30 2019-09-17 江苏能华微电子科技发展有限公司 二极管用外延片及其制备方法
CN106098798A (zh) * 2016-06-30 2016-11-09 江苏能华微电子科技发展有限公司 肖特基二极管用外延片及其制备方法
CN106098746A (zh) * 2016-06-30 2016-11-09 江苏能华微电子科技发展有限公司 一种二极管用外延片及其制备方法
CN106098793A (zh) * 2016-06-30 2016-11-09 江苏能华微电子科技发展有限公司 肖特基二极管用外延片及其制备方法
CN113451450B (zh) * 2020-08-06 2022-04-29 重庆康佳光电技术研究院有限公司 Led磊晶结构及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100244096A1 (en) * 2009-03-26 2010-09-30 Sanken Electric Co., Ltd. Semiconductor device
EP2434532A1 (de) * 2010-09-28 2012-03-28 Samsung Electronics Co., Ltd. Halbleitervorrichtung und Verfahren zu deren Herstellung

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10151092B4 (de) * 2001-10-13 2012-10-04 Azzurro Semiconductors Ag Verfahren zur Herstellung von planaren und rißfreien Gruppe-III-Nitrid-basierten Lichtemitterstrukturen auf Silizium Substrat
US6818061B2 (en) 2003-04-10 2004-11-16 Honeywell International, Inc. Method for growing single crystal GaN on silicon
KR100765004B1 (ko) * 2004-12-23 2007-10-09 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
EP2112699B1 (de) 2006-02-23 2020-05-06 ALLOS Semiconductors GmbH Nitridhalbleiter-Bauelement und Verfahren zu seiner Herstellung
US7825432B2 (en) * 2007-03-09 2010-11-02 Cree, Inc. Nitride semiconductor structures with interlayer structures
CN102045127B (zh) * 2009-10-23 2014-12-10 华为技术有限公司 光解偏振复用的接收装置、发送装置、系统及方法
GB2485418B (en) * 2010-11-15 2014-10-01 Dandan Zhu Semiconductor materials
DE102011114665B4 (de) 2011-09-30 2023-09-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Nitrid-Verbindungshalbleiter-Bauelements
US8946773B2 (en) * 2012-08-09 2015-02-03 Samsung Electronics Co., Ltd. Multi-layer semiconductor buffer structure, semiconductor device and method of manufacturing the semiconductor device using the multi-layer semiconductor buffer structure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100244096A1 (en) * 2009-03-26 2010-09-30 Sanken Electric Co., Ltd. Semiconductor device
EP2434532A1 (de) * 2010-09-28 2012-03-28 Samsung Electronics Co., Ltd. Halbleitervorrichtung und Verfahren zu deren Herstellung

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
KROST A ET AL: "GaN-based epitaxy on silicon: stress measurements", PHYSICA STATUS SOLIDI. A: APPLIED RESEARCH, WILEY - VCH VERLAG, BERLIN, DE, vol. 200, no. 1, 1 November 2003 (2003-11-01), pages 26 - 35, XP002435960, ISSN: 0031-8957 *

Also Published As

Publication number Publication date
WO2014048991A2 (de) 2014-04-03
US20150228858A1 (en) 2015-08-13
US9685589B2 (en) 2017-06-20
DE102012217631A1 (de) 2014-03-27
DE102012217631B4 (de) 2022-05-25

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