WO2014048797A2 - Module lumineux annulaire et procédé de fabrication d'un module lumineux annulaire - Google Patents

Module lumineux annulaire et procédé de fabrication d'un module lumineux annulaire Download PDF

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Publication number
WO2014048797A2
WO2014048797A2 PCT/EP2013/069270 EP2013069270W WO2014048797A2 WO 2014048797 A2 WO2014048797 A2 WO 2014048797A2 EP 2013069270 W EP2013069270 W EP 2013069270W WO 2014048797 A2 WO2014048797 A2 WO 2014048797A2
Authority
WO
WIPO (PCT)
Prior art keywords
light module
ring light
reflection surface
radiation
semiconductor components
Prior art date
Application number
PCT/EP2013/069270
Other languages
German (de)
English (en)
Other versions
WO2014048797A3 (fr
Inventor
Christian Gärtner
Thomas Schlereth
Roland Schulz
Albert Schneider
Markus Kirsch
Tony Albrecht
Michael Bestele
Jan Marfeld
Stephan Kaiser
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2014048797A2 publication Critical patent/WO2014048797A2/fr
Publication of WO2014048797A3 publication Critical patent/WO2014048797A3/fr

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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V7/00—Reflectors for light sources
    • F21V7/0008—Reflectors for light sources providing for indirect lighting
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2103/00—Elongate light sources, e.g. fluorescent tubes
    • F21Y2103/30—Elongate light sources, e.g. fluorescent tubes curved
    • F21Y2103/33—Elongate light sources, e.g. fluorescent tubes curved annular
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]

Definitions

  • Ring light module and method for producing a
  • a ring light module is specified.
  • a method for producing such a ring light module is specified.
  • the document DE 10 2010 046 255 AI relates to a
  • Lighting device arranged in a ring
  • An object to be solved is to provide a ring light module, which has a high luminance and a high
  • this includes
  • Ring light module several light-emitting, optoelectronic semiconductor components.
  • the semiconductor components are preferably light-emitting diodes. In particular, emit
  • Semiconductor components may also be yellow or white
  • the main emission direction is the direction along which a maximum intensity is radiated. According to at least one embodiment, the
  • Emission directions in different directions show different directions of emission. It is possible that in each case exactly two semiconductor components have an antiparallel main emission direction and that in each case no two main emission directions into the same
  • Main emission directions of the semiconductor devices may be different from each other in pairs.
  • Ring light module one or more reflectors.
  • the at least one reflector has a curved reflection surface.
  • the reflection surface is not in a plane.
  • the reflector and the reflection surface may be curved along different spatial directions and / or have more than one curvature.
  • Ring light module on a carrier The semiconductor devices are attached to the carrier, for example via soldering or gluing. It includes the carrier in particular
  • the carrier preferably has a high thermal conductivity. It is the carrier, for example, a metal core board, a flexible circuit board or a Lead frame or it comprises the carrier at least one of said components.
  • Reflecting surface arranged around.
  • the entire reflection surface lies within the arrangement line, but preferably at least a proportion of 50% or of 80% of the reflection surface, seen in plan view,
  • Arrangement line seen in plan view, is annular.
  • the arrangement line forms a
  • the arrangement line can also be designed as a spiral ring.
  • the arrangement line passes through
  • the placement line may be a fictitious line. It is possible that the
  • the reflector has a maximum height in a center.
  • the height is in this case based in particular on a bottom side of the ring light module.
  • the bottom side lies opposite a main radiation side of the ring light module.
  • the center lies in a geometric center of an inner surface enclosed by the arrangement line. The fact that the center is in the geometric center of the inner surface can mean that seen in plan view of the reflection surface the
  • the fact that the main emission directions point to the center may mean that the main emission directions have a tolerance of at most 15 ° or at most 10 ° or at most 5 ° or exactly towards the center.
  • Densely arranged may mean that a distance between adjacent semiconductor devices along the
  • Arrangement line is at most a 1.5 times or at most a 1.0 times a mean edge length of the semiconductor devices or a mean diameter of the semiconductor devices.
  • a distance between adjacent semiconductor components is smaller or of the same order of magnitude as dimensions of the semiconductor components, seen in plan view of the semiconductor components.
  • this includes
  • Ring light module a plurality of light-emitting, optoelectronic semiconductor components, each having a main emission direction.
  • the ring light module further includes a
  • the Reflector having a curved reflection surface.
  • the Reflection surface is designed to be that of the
  • the semiconductor devices in operation to reflect emitted radiation.
  • the semiconductor devices are attached to a carrier.
  • the semiconductor devices seen in plan view of the reflection surface, are arranged along an arrangement line in an annular manner around the reflection surface.
  • the reflector In a center, the reflector has a maximum height with respect to a bottom side of the ring light module.
  • the bottom side is a main radiation side of the ring light module
  • the center is located in a geometric center of an enclosed by the arrangement line
  • Inner surface seen in plan view of the reflection surface and with a tolerance of at most 10% of an average diameter of the inner surface. In top view on the
  • the light emitted by the module should be as homogeneous as possible in terms of light color and luminance and be monotone over the largest possible area and should have as few unsteady points or sharp bends as possible.
  • the module should be as small as possible have geometric dimensions to allow high luminous flux and high efficiency.
  • Diffuser material may in this case be added to a volume casting or, for example, are in diffuser plates, so that a thorough mixing of the individual
  • Difficulties occur in particular in the case of planar semiconductor components whose emission directions are oriented parallel to one another.
  • Ring light module achievable without a separate diffuser is necessary. Further, a directional characteristic of the radiation of the semiconductor devices is maintained and is not expanded by a diffuser. Furthermore, a compact arrangement with a high luminance is possible.
  • the reflection surface is a specular surface or a diffusely reflecting surface.
  • Diffuse reflective can here mean that a scattering only in a small
  • Angular range may mean that an opening angle of a scattering cone is at most 4 ° or at most 6 °.
  • the average edge length or the mean diameter is determined here in particular in a plane perpendicular to the main emission direction.
  • the mean distance is at most 3.5 mm or at most 5.5 mm. In accordance with at least one embodiment, all
  • the spatial radiation characteristics of the semiconductor components differ from each other.
  • the ring light module then comprises semiconductor components having a first, spatially narrower
  • the ring light module comprises a cover plate.
  • the cover plate is preferably attached to the main radiation side.
  • About the cover plate protection of the semiconductor devices and the ring light module against external influences can be achieved.
  • Cover plate is preferably clear and
  • the cover plate is provided with optically effective coatings such as antireflection layers or filter layers.
  • Ring light module one or more conversion means.
  • the at least one conversion means is to a partial or complete wavelength conversion of the
  • the semiconductor components may themselves comprise a conversion means.
  • Conversion agent applied as a layer on the cover plate and / or on the reflection surface of the reflector.
  • the semiconductor components are preferably not in this case
  • Conversion means arranged spaced.
  • Reflection surface convex curved seen from the semiconductor devices.
  • the reflective surface then has a hyperbolic or parabolic curvature, in the Cross section seen. It is possible in this case that the semiconductor devices are located in or near a focal point of the reflection surface.
  • the semiconductor devices are located in or near a focal point of the reflection surface.
  • Reflection surface then set to a focus or to a parallelization of the radiation emitted by the semiconductor devices radiation.
  • Reflection surface concave shaped. By the reflection surface then a radiation expansion and an increase of a radiation angle can be achieved.
  • the rows can, in
  • the rows or at least two of the rows may have mutually different average diameters and, viewed in plan view, not to coincide.
  • Top view to be arranged on a gap.
  • Main emission direction and the bottom side is then less than 90 °.
  • this angle is between 70 ° and 90 °.
  • this angle can be between 45 ° inclusive and> 90 °.
  • Main emission directions are then preferably between 90 ° and 105 ° or between 90 ° and 135 ° inclusive.
  • the reflector is made of a radiation-transmissive or semi
  • the reflector can then be semi-transparent. A portion of the radiation emitted by the semiconductor components can then pass through the reflector. For example, the reflector at the reflection surface between a degree of reflection
  • the reflector is chromatically selectively reflective.
  • radiation in a certain spectral range can then be reflected by the reflector at the reflection surface and radiation in a different spectral range at least partially penetrates the reflector.
  • the reflector then preferably acts refractive.
  • the reflector is for at least a portion of that of the semiconductor device
  • Semiconductor devices emitted radiation total reflection at the reflection surface. It is possible that a certain part of the radiation, which impinges on the reflection surface in a certain angular range, penetrates into the reflector. In particular, for such radiation may be provided in the reflector, a further, inner reflection surface.
  • Reflection surface formed of at least two facets.
  • the facets are preferably by an edge or a kink, so a particular non-differentiable body,
  • the semiconductor components are assigned. By faceting the reflection surface, an improved setting of a radiation characteristic of the ring light module can be achieved. If the reflection surface is not faceted, then the reflection surface, in particular seen in cross section, is a continuous and differentiable, ie smooth, surface. In accordance with at least one embodiment of the ring light module, the semiconductor components are displaceably mounted relative to the reflection surface. It can here the
  • Reflection surface can be moved or changed in shape. This is for example through a mechanism
  • the ring light module comprises at least five or at least six or at least eight or at least twelve of the semiconductor components. Alternatively or additionally, the number of
  • an average diameter of the inner surface enclosed by the arrangement line is at least 5 mm or at least 8 mm.
  • the mean diameter can be at most 50 mm or at most 35 mm.
  • the reflector may have a maximum height, with respect to the bottom side, of at least 2 mm or of at least 4 mm. Likewise, the maximum height may be no more than 50 mm or no more than 30 mm, no more than 15 mm or not more than 9 mm.
  • At least one of the semiconductor devices is or are most
  • Luminous flux of at least 35 Im or of at least 50 Im or of at least 60 Im to produce at least 50% or at least 75% or at least 90% of the
  • the radiation characteristic of the ring light module is then determined substantially by the reflector and a radiation component emitted directly by the semiconductor components, which leaves the ring light module without reflection at the reflector, preferably only makes a subordinate component.
  • the radiation characteristic of the ring light module is then determined substantially by the reflector and a radiation component emitted directly by the semiconductor components, which leaves the ring light module without reflection at the reflector, preferably only makes a subordinate component.
  • emitted radiation has a reflectance of at least 85% or at least 90%. It is possible that the
  • Reflection surface with a metal coating such as with
  • Ring light module then has, for example, a disk-shaped or cylindrical outer shape.
  • a rotation axis preferably passes through the center of the reflector and the reflection surface.
  • the semiconductor components are preferably also arranged rotationally symmetrical.
  • the lens is in particular one
  • a lens top facing away from the reflector preferably has a central minimum, and a lens underside facing the reflector can exhibit a circumferential, annular minimum.
  • the lens is beam-forming both by reflection and by refraction. It is possible that a portion of the radiation emitted by the semiconductor devices is directed at the lens bottom in the direction away from the top of the lens, with that portion of the radiation not passing through the lens. According to at least one embodiment, the
  • Main emission directions of the semiconductor devices oriented parallel or perpendicular to mounting sides of the semiconductor devices.
  • the semiconductor devices are so-called side-lookers.
  • the semiconductor components are then produced from a common leadframe composite.
  • the semiconductor devices can be electrically
  • leadframe be connected in parallel or electrically in series. It is possible for the leadframe to be replaced by a
  • Enclosed encapsulation body in which the semiconductor components may be partially or completely enclosed in which the semiconductor components may be partially or completely enclosed.
  • the semiconductor components may be unfired LED chips that are mounted directly on the lead frame and immediately surrounded by the potting.
  • the ring light module is arranged to emit radiation on two opposite main sides.
  • two of the reflectors of the ring light module are then oriented antiparallel to each other and, viewed in plan view on one of the main sides, preferably arranged congruently one above the other.
  • the two reflectors can be shaped the same or different from each other, for example, with mutually different, average curvatures.
  • a method for producing a ring light module is specified.
  • the ring light module may be a module as indicated in one or more of the above embodiments. Features of the method are therefore also disclosed for the ring light module and vice versa.
  • the method comprises at least the following steps, in particular in the order given:
  • the carrier comprises a metal core board, a lead frame and / or a flexible circuit board or is.
  • the carrier is rolled up or bent up to the arrangement line.
  • the part of the carrier on which the semiconductor devices are mounted is then one, for example
  • Circuit board strip that is formed into a ring.
  • the carrier after attaching the semiconductor devices, in places
  • Figures 1 to 8 and 14 to 16 are schematic representations of embodiments of ring light modules described herein, and
  • FIG. 9 to 13 are schematic representations of
  • FIG. 1A shows in a sectional view and in FIG. 1B a perspective illustration of an exemplary embodiment of a ring light module 1.
  • the ring light module 1 comprises a carrier 4, on which a plurality of optoelectronic
  • Main emission directions 20 of the LEDs 2 each have to a center 44 of the ring light module 1. Die
  • Main emission directions 20 are oriented differently from each other.
  • the ring light module 1 includes a reflector 3 with a reflection surface 30.
  • the center 44 has the
  • Reflector 3 a maximum height, based on a Bottom side 40 of the ring light module 1, the one
  • Radiation main side 45 is preferably the entire, in
  • Ring light module 1 emitted radiation emitted.
  • the semiconductor components 2 are arranged along a circular, closed arrangement line 42, symbolized in FIG. 1 by a dashed line.
  • the arrangement line 42 includes the reflector 3, seen in plan view, in
  • the reflection surface 30 is smooth and convex shaped, from the viewpoint of the semiconductor devices 2.
  • the semiconductor devices 2 are located approximately at a focal point of the reflection surface 30.
  • beam focusing is achieved.
  • a high luminance is achieved.
  • a homogenization of the radiation emitted by the semiconductor components 2 radiation can be achieved.
  • FIG. 2 A further exemplary embodiment of the ring light module 1 is shown in FIG. 2, see the front view according to FIG. 2A, the sectional views according to FIG. 2B and according to FIG. 2C, the top view according to FIG. 2D and the perspective view according to FIG. 2E.
  • the ring light module 1 Compared with FIG. 1, the ring light module 1 according to FIG. 2 comprises a larger number of semiconductor components 2.
  • the reflection surface 30 is shaped as a conical jacket and has a triangular shape when viewed in cross section. A radiation R emitted from the semiconductor devices 2 is reflected at the reflection surface 30. It is possible that the reflector 3 from a
  • an additional reflective layer for example a metal coating, may optionally be provided on the bottom side 40, which is not shown in FIG.
  • FIG. 3 shows further exemplary embodiments of the ring light module 1 in schematic sectional views.
  • Ring light modules 1 each preferably have a heat sink 8, for example, with cooling fins, the thermally preferred in
  • the carrier 4 comprises a good thermally conductive material such as copper and is for example made of a metal core board
  • the reflector 3 is formed as a cone and seen in cross-section triangular.
  • the reflector 3 lies completely within one of the carrier 4
  • Semiconductor devices 2 is not a direct, not interrupted by the reflector 3 line of sight, as preferred in the other embodiments.
  • the reflector 3 is shaped as a truncated cone and has a cross section
  • FIG. 3C a reflector 3 is seen from the perspective of FIG.
  • the reflection surface 30 is formed by a plurality of facets 35.
  • the facets 35 are separated by edges.
  • a cover plate 6 may be provided on the light exit side 45. Furthermore optionally, a conversion means 7 for the partial wavelength conversion of the radiation generated by the semiconductor components 2 can be provided on the cover plate 6
  • the semiconductor components 2 are arranged in two rows which lie one above another in the direction perpendicular to the bottom side 40.
  • the reflector 3 projects beyond the carrier 4, in the direction away from the bottom side 40, according to FIG. 3F.
  • the reflection side 30 is coated with the conversion means 7.
  • the conversion means 7 extends only to certain portions of the reflective surface 30.
  • An applied on the reflector 3 conversion means 7 may also be present in all other embodiments.
  • the ring light module 1 according to FIG. 3G also has two facets 35. It is possible that each of the facets 35 is associated with exactly one of the rows of the semiconductor devices 2. Unlike drawn, the facets, viewed in cross-section, not only straight surfaces, but also have curved surfaces.
  • the reflector 3 is semi-transparent. Only part of the radiation R is reflected at the reflection surface 30. Another part of
  • Radiation R passes through the reflector 3 and is at the
  • Reflection surface 30 a total of twice broken.
  • the reflector 3 is designed as a spectrally dependent reflecting mirror.
  • a radiation Rl having a first spectral composition is deposited at the
  • Reflection surface 30 reflected.
  • a radiation R2 with a different spectral composition passes through the reflector 3 and undergoes a refraction at the reflection surface 30.
  • Semi-transparent and / or dichroic reflectors 3 can also be used in the other geometric shapes of the reflector 3, cf. for example FIG.
  • FIG. 5 shows that the ring light module 1 has a reflector 3 with a variable reflection surface 30a, 30b.
  • the reflector 3 can have a convex, light-collecting reflection surface 30a or a light-distributing, concave reflection surface 30b.
  • the reflector 3 is cosinusoidal in cross-section is.
  • the reflection surface 30 has in the center 44, in which the reflector 3 has a maximum height, no peak, but runs around.
  • the reflector 3 according to FIG. 6B has a greater curvature.
  • the main emission directions 20 of the semiconductor devices 2 point away from the bottom side 40. Unlike shown it is like in all others
  • Main emission directions 20 point towards the bottom side 40 or parallel to the bottom side.
  • the reflector 3 is followed by a lens 5.
  • the lens is both refractive and reflective. This makes it possible that a portion of the radiation R against the main emission direction of
  • FIG. 9 shows a production method for the
  • strip-shaped carrier 4 is provided. Further, the semiconductor devices 2 are provided. Both
  • Semiconductor components 2 may be light-emitting diodes with a thinned LED chip.
  • the semiconductor components 2 then preferably have an intermediate carrier 27 with a
  • the potting body 28 may be rotationally symmetric or, in Seen top view of the mounting side 24, also be shaped ellipsoid.
  • the main emission direction 20 is oriented perpendicular to the mounting side 24. Notwithstanding this, it is also possible for light-emitting diode chips to be mounted on the carrier 4 in the uncausaged state, see also FIG. 9B.
  • the carrier 4 with the semiconductor components 2 is rolled up into a ring.
  • the reflector 3 is attached. This results in a ring light module 1, as shown for example in connection with FIG. 1B.
  • the semiconductor components 2 are mounted on the planar carrier 4.
  • the carrier 4 has a central region for the bottom side 40 and star-shaped regions for the side walls 48.
  • the areas for the side walls 48 are folded over so that the ring light module 1 results.
  • the areas for the side walls 48 may not only be rectangular but also rectangular
  • the main emission directions 20 of the semiconductor devices may point to the bottom side 40, see FIG. 10B, or from FIG
  • FIG. 1A Another embodiment of the manufacturing process is shown in FIG. According to Figure IIA are the
  • Illustration is the reflector in Figure IIB not shown.
  • laterally emitting semiconductor components 2 are provided, compare FIG. 12A.
  • the carrier 4 is designed annular or plate-like, see also Figure 12A.
  • the semiconductor components 2 whose
  • Main emission direction 20 is oriented parallel to the mounting side 24, applied to the support 4.
  • the reflector is not drawn.
  • FIG. 13 shows schematically that the carrier 4 is formed by a lead frame 27.
  • the semiconductor devices 2 mounted on the lead frame 27 are not drawn in FIG. According to the length necessary for the arrangement line 42, the lead frame 27 is singulated, symbolized by the dashed lines.
  • Sectional view in Figure 14A has a convex-shaped reflector 3. This results in a close
  • An emission angle is approximately 60 °, based on the full width at half the height of the
  • the ring light module 1 according to FIG. 15A has a concave reflector 3. This results in a broader radiation characteristic, see Figure 15B, with a
  • a plurality of, in particular structurally identical, carriers 4 with the associated semiconductor components 2 are mounted on the reflector 3, so that the semiconductor components 2 are arranged one above the other in a plurality of rows. Notwithstanding this, it is possible that the individual rows of the semiconductor devices 2 are formed differently from each other. Even with such a ring light module 1, a narrow emission characteristic with respect to the emission angle results, compare FIG. 16C. An emission angle is about 80 ° FWHM. The invention described here is not by the

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Abstract

L'invention concerne, dans au moins un mode de réalisation, un module lumineux annulaire (1) comprenant plusieurs composants semi-conducteurs (2) optoélectroniques émetteurs de lumière qui présentent chacun une direction d'émission principale (20). Le module lumineux annulaire (1) contient un réflecteur (3) qui présente une surface réfléchissante (30) courbe. Les composants semi-conducteurs (2) sont appliqués sur un support (4). Les composants semi-conducteurs (2), vus du dessus en direction de la surface réfléchissante (30), sont disposés le long d'une ligne d'agencement (42) en forme d'anneau autour de la surface réfléchissante (30). Le réflecteur (3) présente au centre (44) une hauteur maximale par rapport à un côté de fond (40) du module lumineux annulaire (1). Le centre (44) se trouve dans un centre géométrique d'une surface intérieure entourée par la ligne d'agencement (42). Vues du dessus en direction de la surface réfléchissante (30), les directions d'émission principales (20) sont orientées en direction du centre (44) avec une tolérance d'au maximum 15°. Les composants semi-conducteurs (2) sont disposés les uns près des autres le long de la ligne d'agencement (42).
PCT/EP2013/069270 2012-09-27 2013-09-17 Module lumineux annulaire et procédé de fabrication d'un module lumineux annulaire WO2014048797A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102012109146.3 2012-09-27
DE102012109146.3A DE102012109146A1 (de) 2012-09-27 2012-09-27 Ringlichtmodul und Verfahren zur Herstellung eines Ringlichtmoduls

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Publication Number Publication Date
WO2014048797A2 true WO2014048797A2 (fr) 2014-04-03
WO2014048797A3 WO2014048797A3 (fr) 2014-05-30

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DE102012109145A1 (de) 2012-09-27 2014-03-27 Osram Opto Semiconductors Gmbh Ringlichtmodul
CN104728647A (zh) * 2015-04-14 2015-06-24 广州光炬智能科技有限公司 一种灯泡
DE102019135527A1 (de) * 2019-12-20 2021-06-24 BILTON International GmbH Beleuchtungsvorrichtung
JPWO2023021749A1 (fr) * 2021-08-17 2023-02-23

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