WO2014040276A1 - 有机显示装置 - Google Patents
有机显示装置 Download PDFInfo
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- WO2014040276A1 WO2014040276A1 PCT/CN2012/081412 CN2012081412W WO2014040276A1 WO 2014040276 A1 WO2014040276 A1 WO 2014040276A1 CN 2012081412 W CN2012081412 W CN 2012081412W WO 2014040276 A1 WO2014040276 A1 WO 2014040276A1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/351—Metal complexes comprising lanthanides or actinides, e.g. comprising europium
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/10—Triplet emission
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/18—Carrier blocking layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/311—Phthalocyanine
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/371—Metal complexes comprising a group IB metal element, e.g. comprising copper, gold or silver
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Definitions
- the present invention relates to the field of organic display technology, and in particular to an organic display device.
- OLED Organic Light Emitting Diode
- OLED Organic Light Emitting Diode
- the OLED does not require a backlight device, it can be manufactured to be relatively thin and light, and the OLED consumes less power than other types of flat panel display devices, and the OLED can operate over a wide temperature range, and the manufacturing cost is low, so that the more and more The more widely used.
- the OLED can realize display of different colors by setting organic light-emitting materials of different colors, for example, red light, green light, and blue light can be provided.
- infrared devices With the increasing popularity of infrared devices, the requirements for infrared applications are getting higher and higher.
- the prior art infrared devices are mostly used in the fields of heating, physiotherapy, night vision, communication, navigation, plant cultivation, high temperature sterilization, infrared detection, and infrared guidance, and the existence of infrared devices such as gas xenon lamps, heated objects or lasers, etc.
- the form of the infrared device can only be used for illumination, and large-area infrared display cannot be realized.
- the inorganic semiconductor infrared generator in the prior art can be used for large-area infrared display, but the inorganic infrared semiconductor material used is an inorganic compound based on mercury cadmium cadmium, which leads to high cost and complicated manufacturing process.
- the formation of thin films on polycrystalline, amorphous and flexible plastic substrates is inconvenient for the user to carry, and limits the application of inorganic infrared semiconductor materials in infrared display devices.
- organic infrared materials (such as infrared organic semiconductor materials) have the advantages of low cost, good solubility, easy processing into large-area flexible devices, and photoelectric properties through molecular tailoring.
- An object of the present invention is to provide an organic display device, which is intended to apply an organic infrared material to an organic display device, which can realize infrared display, reduce cost, and facilitate user's use.
- the present invention constructs an organic display device including at least one infrared display pixel, the infrared display pixel including a flexible transparent substrate, a first electrode layer deposited on the flexible transparent substrate, and infrared An organic light-emitting layer and a second electrode layer, wherein the infrared organic light-emitting layer is filled with an infrared light-emitting material;
- a scan line Forming, on the transparent substrate, a scan line, a data line, a power line, and a switch array component, wherein the infrared display pixel is connected to the scan line, the data line, and the power line through the off array component, and according to the scan line
- the signals of the data lines and the power lines control the opening and closing of the infrared display pixels.
- the infrared luminescent material is a trivalent rare earth ion complex, a phthalocyanine material or a porphyrin material.
- the infrared luminescent material is an organic polymer or an organic ion dye.
- a first protective layer is formed between the transparent substrate and the first electrode layer.
- a hole transport layer is formed between the first electrode layer and the infrared organic light-emitting layer, and an electron transport layer is further formed on the second electrode layer.
- a hole blocking layer is further formed between the electron transport layer and the second electrode layer.
- the infrared display pixel further includes a second protective layer, the second protective layer and the first protective layer form a protective space, the first electrode layer and the hole transport layer The infrared organic light-emitting layer, the hole blocking layer, and the electron transport layer are all located in the protective space.
- the first protective layer comprises a polymer layer having at least one layer and a cut-off layer of at least one layer, and the polymer layer and the cut-off layer are alternately stacked.
- Another object of the present invention is to provide an organic display device, which is intended to apply an organic infrared material to an organic display device, which can realize infrared display, reduce cost, and facilitate user's use.
- the present invention constructs an organic display device comprising at least one infrared display pixel, the infrared display pixel comprising a transparent substrate, a first electrode layer deposited on the transparent substrate, and an infrared organic light emitting layer And a second electrode layer, wherein the infrared organic light emitting layer is filled with an infrared luminescent material.
- the transparent substrate is a flexible transparent substrate.
- the infrared luminescent material is a trivalent rare earth ion complex, a phthalocyanine material or a porphyrin material.
- the infrared luminescent material is an organic polymer or an organic ion dye, wherein a band gap of the organic polymer is within a predetermined range.
- a first protective layer is formed between the transparent substrate and the first electrode layer.
- a hole transport layer is formed between the first electrode layer and the infrared organic light-emitting layer, and an electron transport layer is further formed on the second electrode layer.
- a hole blocking layer is further formed between the electron transport layer and the second electrode layer.
- the infrared display pixel further includes a second protective layer, the second protective layer and the first protective layer form a protective space, the first electrode layer and the hole transport layer The infrared organic light-emitting layer, the hole blocking layer, and the electron transport layer are all located in the protective space.
- the first protective layer comprises a polymer layer having at least one layer and a cut-off layer of at least one layer, and the polymer layer and the cut-off layer are alternately stacked.
- the transparent substrate is further formed with a scan line, a data line, a power line, and a switch array component, and the infrared display pixel is connected to the scan line, the data line, and the power source through the off array component. And controlling the opening and closing of the infrared display pixels according to the signals of the scan lines, the data lines, and the power lines.
- the invention fills the organic light-emitting layer of the organic display device with the infrared light-emitting material as the infrared organic light-emitting layer, and cooperates with the flexible transparent substrate, so that the organic display device can perform large-area infrared display, and the manufacturing process is simple.
- the manufacturing cost is low; and since the flexible transparent substrate is used in the present invention, the organic display device can be made into a clothing or the like, which is convenient to use and carry, greatly expands the function of the organic display device, and improves the user experience.
- FIG. 1 is a schematic top plan view of an organic display device of the present invention
- FIG. 2 is a cross-sectional structural view of an infrared display pixel in the present invention
- FIG. 3 is a cross-sectional structural view showing a first protective layer in the present invention.
- FIG. 4 is a schematic view showing the control structure of an organic display device in the present invention.
- FIG. 1 is a schematic top plan view of an organic display device according to the present invention, wherein the organic display device 10 includes a plurality of infrared rays arranged in a row direction A (ie, a length direction) and a column direction B (ie, a width direction).
- Display pixel 11 the infrared display pixel 11 is used to emit infrared light (infrared Light, IR), where the wavelength of the infrared light is generally between 0.76 and 400 microns, which is invisible to the naked eye.
- IR infrared Light
- the infrared light should be observed through special instruments, which will not be described here.
- FIG. 2 is a cross-sectional structural view of the infrared display pixel 11 of FIG.
- the infrared display pixel 11 includes a transparent substrate 20 on which a first protective layer 21, a first electrode layer 22 (ie, an anode), a hole transport layer 23, and an infrared organic light emitting layer are sequentially formed. 24.
- a hole blocking layer 25 an electron transport layer 26, a second electrode layer 27 (i.e., a cathode), and a second protective layer 28.
- the second protective layer 28 is bent and closed with respect to the first protective layer 21, and forms a protective space (not shown) with the first protective layer 21, and the protective space will be the first electrode layer. 22.
- the hole transport layer 23, the infrared organic light-emitting layer 24, the hole blocking layer 25, the electron transport layer 26, and the second electrode layer 27 are wrapped therein for protection.
- the infrared organic light-emitting layer 24 includes an infrared light-emitting material, which is preferably a trivalent rare earth ion complex, a phthalocyanine-based material or a porphyrin-based material, and may also be an organic polymer or an organic ion dye.
- the band gap of the organic polymer (the difference between the lowest point of the conduction band and the energy of the highest point of the valence band) is within a predetermined range, such as the predetermined range of 0.50 electron volts to 1.50 electron volts.
- the structural formula of copper phthalocyanine refers to formula (I)
- the copper phthalocyanine material has an emission spectrum peak at 1120 nanometers (nm); and the infrared luminescent material is three.
- (8-hydroxyquinoline) fluorene the structural formula of tris(8-hydroxyquinoline) fluorene is shown in formula (II), and the emission spectrum of the tris(8-hydroxyquinoline) fluorene is at 1530 nm.
- the transparent substrate 20 is preferably a flexible transparent substrate such as polyethylene terephthalate (Polyethylene). Terephthalate, PET) or stainless steel foil.
- FIG. 3 is a cross-sectional structural view of the first protective layer 21 in the present invention.
- the first protective layer 21 is provided to prevent other external substances from entering the inside of the infrared display pixel 11, such as being waterproof or the like.
- the first protective layer 21 includes at least one polymer layer 211 and at least one of the cut-off layers 212, such as an inorganic dense cut-off layer.
- the polymer layer 211 and the cut-off layer 212 are alternately stacked.
- the material of the polymer layer 211 may be a parylene, a polyolefin, a polyester, or a polyimide (PI).
- the parylenes are, for example, PPX (poly-p-xylene) or PCPX (poly-chloro-p-xylene);
- the polyolefins are, for example, PE (polyethylene), PS (polystyrene), PP (poly) Propylene), PET, PTFE (polytetrafluoroethylene) or PFA (soluble polytetrafluoroethylene); the polyesters such as PEN (polyethylene terephthalate), PC (polycarbonate), PMMA ( Polymethyl methacrylate), PVAC (polyvinyl acetate) or PES (polyether sulfone resin).
- the material of the cutoff layer 212 may be a transparent oxide film, a transparent fluoride film, a silicon nitride series (SixNy) or a sulfur-based glass.
- the transparent oxide film is, for example, titanium dioxide (TiO2), magnesium oxide (MgO), silicon dioxide (SiO) 2, zirconium dioxide (ZrO 2 ), zinc oxide (ZnO) or aluminum oxide (Al 2 O 3 );
- the fluoride film is, for example, lithium fluoride (LiF) or magnesium fluoride (MgF2);
- the silicon nitride series (SixNy) is, for example, (Si3N4) or (SiNx);
- the sulfur-based glass is, for example, selenium (Se), ⁇ (Te) or ⁇ (Sb).
- the material of the cut-off layer 212 may also be zinc sulfide (ZnS), bismuth oxynitride (SiOxNy) or ce
- the first electrode layer 22 may be indium tin oxide (ITO), and the second electrode layer 27 may be a magnesium silver alloy.
- ITO indium tin oxide
- the second electrode layer 27 may be a magnesium silver alloy.
- electrons from the second electrode layer 27 and holes (also called holes) from the first electrode layer 22 recombine at the infrared organic light-emitting layer 24, causing the infrared organic light-emitting layer 24 to emit infrared light.
- An apparatus for observing infrared light (not shown) can observe the infrared emitted by the infrared organic light-emitting layer 24 through the transparent substrate 20, the first protective layer 21, the first electrode layer 22, and the hole transport layer 23.
- the organic display device is a device for displaying an infrared light source in a large area.
- FIG. 4 is a schematic diagram of a control structure of an organic display device according to the present invention.
- a transparent substrate (not shown in FIG. 4) is formed with a scan line 31, a data line 32, a power line 33, and a thin film field effect transistor (Thin Film). Transistor, TFT) 34.
- the infrared display pixels 11 are disposed in an area defined by the intersection of the scan lines 31 and the data lines 32, and the data lines 32 and power lines 33 are disposed on both sides of the infrared display pixels 11.
- the infrared display pixel 11 of the present invention passes through a TFT 34 connects the scan line 31, the data line 32, and the power line 33.
- the organic display device further includes a driving module for driving the infrared display pixel 11 to emit infrared light.
- the driving module is, for example, a gate driving chip and a source driving chip (not shown), and is respectively connected to the scan line 31 and the data line 32 to provide the scan line 31 and the scan signal, and the data line 32 is provided.
- a data signal, and the infrared display pixel 11 performs an opening or closing action according to the signals on the scan line 31, the data line 32, and the power line 33.
- the invention can fill the infrared luminescent material as the infrared organic luminescent layer in the organic luminescent layer of the organic display device, and cooperate with the flexible transparent substrate, so that the organic display device can perform large-area infrared display, and the manufacturing process is simple and the manufacturing cost is low; Since the flexible transparent substrate is used in the present invention, the organic display device can be made into a clothing or the like, which is convenient to use and carry, greatly expands the function of the organic display device, and improves the user experience.
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Description
本发明涉及有机显示技术领域,特别是涉及一种有机显示装置。
有机发光二极管(Organic Light Emitting
Diode,OLED),作为新一代照明显示装置,通过将有机发光材料夹在透明阳极和金属反射阴极之间,对有机发光材料施加电压来进行发光。由于OLED不需要背光装置,可以制造的比较轻薄,比起其它类型的平板显示器件,OLED消耗的电力较少,且OLED可以在宽的温度范围内工作,且制造成本较低,因此得到越来越广泛的应用。而且,OLED通过设置不同颜色的有机发光材料,可以实现不同色彩的显示,譬如可以提供红光、绿光和蓝光等。
而随着红外设备的不断普及,对红外应用的要求也越来越高。现有技术的红外设备多用于加热、理疗、夜视、通讯、导航、植物栽培、高温杀菌、红外探测以及红外制导等领域,且红外设备的存在形式譬如气体氙灯、受热物体或者激光器等,上述形式的红外设备只能用于照明,无法实现大面积的红外显示。
现有技术中的无机半导体红外发生器虽可用于大面积红外显示,但是由于其使用的无机红外半导体材料为基于以碲镉汞为主的无机化合物,导致成本高、制作工艺较复杂,不能在多晶、非晶以及柔性塑料衬底上制备形成薄膜,用户携带不便,限制了无机红外半导体材料在红外显示器件的应用。
有机红外材料(譬如红外有机半导体材料)相对于无机红外半导体材料,具有价廉质轻、溶解性好、易加工成大面积柔性器件和通过分子剪裁调控光电性能等优势。
如何将有机红外材料应用于有机显示装置,既能够实现红外显示,又能降低成本,方便用户的使用,是有机显示技术领域研究的方向之一。
本发明的一个目的在于提供一种有机显示装置,旨在将有机红外材料应用于有机显示装置,既能够实现红外显示,又能降低成本,方便用户的使用。
为达到上述有益效果,本发明构造了一种有机显示装置,其中包括至少一个的红外显示像素,所述红外显示像素包括柔性透明基底,沉积在所述柔性透明基底上的第一电极层、红外有机发光层以及第二电极层,其中所述红外有机发光层填充有红外发光材料;
所述透明基底上还形成有扫描线、数据线、电源线以及开关阵列组件,所述红外显示像素通过所述关阵列组件连接所述扫描线、数据线以及电源线,并根据所述扫描线、数据线以及电源线的信号控制所述红外显示像素的开闭。
在本发明一实施例中:所述红外发光材料为三价稀土离子配合物、酞菁类材料或者卟啉类材料。
在本发明一实施例中:所述红外发光材料为有机聚合物或者有机离子染料。
在本发明一实施例中:所述透明基底和所述第一电极层之间形成有第一保护层。
在本发明一实施例中:所述第一电极层和所述红外有机发光层之间形成有空穴传输层,所述第二电极层上还形成有电子传输层。
在本发明一实施例中:所述电子传输层和所述第二电极层之间还形成有空穴阻挡层。
在本发明一实施例中:所述红外显示像素还包括有第二保护层,所述第二保护层与所述第一保护层形成一保护空间,所述第一电极层、空穴传输层、红外有机发光层、空穴阻挡层以及电子传输层均位于所述保护空间内。
在本发明一实施例中:所述第一保护层包括有至少一层的聚合物层和至少一层的截止层,且所述聚合物层和截止层交替叠加设置。
本发明的另一个目的在于提供一种有机显示装置,旨在将有机红外材料应用于有机显示装置,既能够实现红外显示,又能降低成本,方便用户的使用。
为达到上述有益效果,本发明构造了一种有机显示装置,包括至少一个的红外显示像素,所述红外显示像素包括透明基底,沉积在所述透明基底上的第一电极层、红外有机发光层以及第二电极层,其中所述红外有机发光层填充有红外发光材料。
在本发明一实施例中:所述透明基底为柔性透明基底。
在本发明一实施例中:所述红外发光材料为三价稀土离子配合物、酞菁类材料或者卟啉类材料。
在本发明一实施例中:所述红外发光材料为有机聚合物或者有机离子染料,其中所述有机聚合物的带隙在预定范围内。
在本发明一实施例中:所述透明基底和所述第一电极层之间形成有第一保护层。
在本发明一实施例中:第一电极层和红外有机发光层之间形成有空穴传输层,所述第二电极层上还形成有电子传输层。
在本发明一实施例中:所述电子传输层和所述第二电极层之间还形成有空穴阻挡层。
在本发明一实施例中:所述红外显示像素还包括有第二保护层,所述第二保护层与所述第一保护层形成一保护空间,所述第一电极层、空穴传输层、红外有机发光层、空穴阻挡层以及电子传输层均位于所述保护空间内。
在本发明一实施例中:所述第一保护层包括有至少一层的聚合物层和至少一层的截止层,且所述聚合物层和截止层交替叠加设置。
在本发明一实施例中:所述透明基底上还形成有扫描线、数据线、电源线以及开关阵列组件,所述红外显示像素通过所述关阵列组件连接所述扫描线、数据线以及电源线,并根据所述扫描线、数据线以及电源线的信号控制所述红外显示像素的开闭。
相对于现有技术,本发明通过在有机显示装置的有机发光层填充红外发光材料作为红外有机发光层,并配合柔性透明基底,可以使得有机显示装置能够进行大面积的红外显示,而且制作过程简洁,制作成本低;而且由于本发明使用柔性透明基底,因此可以将有机显示装置制作成衣服等样式,便于使用和携带,极大的拓展了有机显示装置的功能,提高了用户体验。
图1为本发明中有机显示装置的俯视结构示意图;
图2为本发明中红外显示像素的剖视结构示意图;
图3为本发明中第一保护层的剖视结构示意图;
图4为本发明中有机显示装置的控制结构示意图。
以下各实施例的说明是参考附加的图式,用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语,例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本发明,而非用以限制本发明。在图中,结构相似的单元是以相同标号表示。
请参阅图1,图1为本发明中有机显示装置的俯视结构示意图,其中所述有机显示装置10包括多个沿行方向A(即长度方向)和列方向B(即宽度方向)排列的红外显示像素11,所述红外显示像素11用于发射红外光线(infrared
light,IR),其中红外光线的波长一般在0.76至400微米之间,为肉眼看不到的光线,需通过特殊仪器观测红外光线,此处暂不赘述。
请参阅图2,图2为图1中红外显示像素11的剖视结构示意图。
所述红外显示像素11包括有透明基底20,所述透明基底20上依次形成有第一保护层21、第一电极层22(即阳极),空穴(hole)传输层23、红外有机发光层24、空穴阻挡层25、电子(electron)传输层26、第二电极层27(即阴极)以及第二保护层28。
所述第二保护层28相对所述第一保护层21呈弯折封闭状,并与所述第一保护层21形成一保护空间(图未标示),该保护空间将所述第一电极层22、空穴传输层23、红外有机发光层24、空穴阻挡层25、电子传输层26以及第二电极层27包裹其中,以起到保护的作用。
所述红外有机发光层24包括红外发光材料,该红外发光材料优选为三价稀土离子配合物、酞菁类材料或者卟啉类材料,也可以是有机聚合物或者有机离子染料。其中所述有机聚合物的带隙(导带的最低点和价带的最高点的能量之差)在预定范围内,譬如该预定范围为0.50电子伏至1.50电子伏。
以所述红外发光材料为酞菁铜材料为例,酞菁铜的结构式请参阅式(I),所述酞菁铜材料发射光谱峰值在1120纳米(nm);以所述红外发光材料为三(8-羟基喹啉)铒为例,三(8-羟基喹啉)铒结构式请参阅式(II),所述三(8-羟基喹啉)铒的发射光谱峰值在1530纳米。
本发明中,所述透明基底20优选为柔性(flexible)透明基底,譬如聚对苯二甲酸类塑料(Polyethylene
terephthalate,PET)或者不锈钢箔。
请参阅图3,图3为本发明中第一保护层21的剖视结构示意图。
由于本发明的透明基底20优选为柔性透明基底,因此设置所述第一保护层21用来防止外部的其它物质进入所述红外显示像素11的内部,譬如可以防水等。所述第一保护层21包括有至少一层的聚合物层211和至少一层的截止层212,譬如无机致密截止层。其中所述聚合物层211和所述截止层212交替叠加设置。
所述聚合物层211的材料可为聚对二甲苯类、聚烯类、聚酯类或者聚酰亚胺(PI)等。所述聚对二甲苯类譬如为PPX(聚对二甲苯)或者PCPX(聚-氯对二甲苯);所述聚烯类譬如为PE(聚乙烯)、PS(聚苯乙烯)、PP(聚丙烯)、PET、PTFE(聚四氟乙烯)或者PFA(可溶性聚四氟乙烯);所述聚酯类譬如为PEN(聚苯二甲酸乙二醇酯)、PC(聚碳酸酯)、PMMA(聚甲基丙烯酸甲酯)、PVAC(聚醋酸乙烯酯)或者PES(聚醚砜树脂)。
而所述截止层212的材料可为透明氧化物薄膜、透明氟化物薄膜、氮化硅系列(SixNy)或者硫系玻璃。其中所述透明氧化物薄膜譬如为二氧化钛(TiO2)、氧化镁(MgO)、二氧化硅(SiO)2、二氧化锆(ZrO2)、氧化锌(ZnO)或者氧化铝(Al2O3);所述透明氟化物薄膜譬如为氟化锂(LiF)或者氟化镁(MgF2);所述氮化硅系列(SixNy)譬如为(Si3N4)或者(SiNx);所述硫系玻璃譬如为硒(Se)、碲(Te)或者锑(Sb)。当然所述截止层212的材料还可以为硫化锌(ZnS)、氮氧化矽(SiOxNy)或者碳氧化矽(SiOxCy)。
请再参阅图2,所述第一电极层22可为铟锡氧化物(ITO),所述第二电极层27可为镁银合金。在偏压条件下,来自第二电极层27的电子与来自第一电极层22的空穴(又称电洞)在红外有机发光层24处复合,导致所述红外有机发光层24发射红外光线,用于观察红外光线的设备(图未示出)可以透过透明基底20、第一保护层21、第一电极层22以及空穴传输层23观察到所述红外有机发光层24发射的红外光线。由于本发明中所述红外有机发光层24为平面光源,使得所述有机显示装置为一大面积显示红外光源的器件。
请参阅图4,图4为本发明中有机显示装置的控制结构示意图。
透明基底(图4未绘出)上形成有扫描线31、数据线32、电源线33及薄膜场效应晶体管(Thin Film
Transistor,TFT)34。所述扫描线31和数据线32交叉限定的区域设置所述红外显示像素11,而所述数据线32和电源线33设置在所述红外显示像素11的两侧。本发明中所述红外显示像素11通过TFT
34连接所述扫描线31、数据线32及电源线33。所述有机显示装置还包括有驱动模块用来驱动所述红外显示像素11发射红外光线。所述驱动模块譬如栅驱动芯片以及源驱动芯片(图未示出),并分别连接所述扫描线31和数据线32,以提供所述扫描线31一扫描信号,以及提供所述数据线32一数据信号,而所述红外显示像素11根据所述扫描线31、数据线32以及电源线33上的信号实现打开或者关闭的动作。
本发明通过在有机显示装置的有机发光层填充红外发光材料作为红外有机发光层,并配合柔性透明基底,可以使得有机显示装置能够进行大面积的红外显示,而且制作过程简洁,制作成本低;而且由于本发明使用柔性透明基底,因此可以将有机显示装置制作成衣服等样式,便于使用和携带,极大的拓展了有机显示装置的功能,提高了用户体验。
综上所述,虽然本发明已以优选实施例揭露如上,但上述优选实施例并非用以限制本发明,本领域的普通技术人员,在不脱离本发明的精神和范围内,均可作各种更动与润饰,因此本发明的保护范围以权利要求界定的范围为准。
Claims (18)
- 一种有机显示装置,其中包括至少一个的红外显示像素,所述红外显示像素包括柔性透明基底,沉积在所述柔性透明基底上的第一电极层、红外有机发光层以及第二电极层,其中所述红外有机发光层填充有红外发光材料;所述透明基底上还形成有扫描线、数据线、电源线以及开关阵列组件,所述红外显示像素通过所述关阵列组件连接所述扫描线、数据线以及电源线,并根据所述扫描线、数据线以及电源线的信号控制所述红外显示像素的开闭。
- 根据权利要求1所述的有机显示装置,其中所述红外发光材料为三价稀土离子配合物、酞菁类材料或者卟啉类材料。
- 根据权利要求1所述的有机显示装置,其中所述红外发光材料为有机聚合物或者有机离子染料。
- 根据权利要求1所述的有机显示装置,其中所述透明基底和所述第一电极层之间形成有第一保护层。
- 根据权利要求4所述的有机显示装置,其中所述第一电极层和所述红外有机发光层之间形成有空穴传输层,所述第二电极层上还形成有电子传输层。
- 根据权利要求5所述的有机显示装置,其中所述电子传输层和所述第二电极层之间还形成有空穴阻挡层。
- 根据权利要求6所述的有机显示装置,其中所述红外显示像素还包括有第二保护层,所述第二保护层与所述第一保护层形成一保护空间,所述第一电极层、空穴传输层、红外有机发光层、空穴阻挡层以及电子传输层均位于所述保护空间内。
- 根据权利要求4所述的有机显示装置,其中所述第一保护层包括有至少一层的聚合物层和至少一层的截止层,且所述聚合物层和截止层交替叠加设置。
- 一种有机显示装置,其中包括至少一个的红外显示像素,所述红外显示像素包括透明基底,沉积在所述透明基底上的第一电极层、红外有机发光层以及第二电极层,其中所述红外有机发光层填充有红外发光材料。
- 根据权利要求9所述的有机显示装置,其中所述透明基底为柔性透明基底。
- 根据权利要求9所述的有机显示装置,其中所述红外发光材料为三价稀土离子配合物、酞菁类材料或者卟啉类材料。
- 根据权利要求9所述的有机显示装置,其中所述红外发光材料为有机聚合物或者有机离子染料。
- 根据权利要求10所述的有机显示装置,其中所述透明基底和所述第一电极层之间形成有第一保护层。
- 根据权利要求13所述的有机显示装置,其中所述第一电极层和所述红外有机发光层之间形成有空穴传输层,所述第二电极层上还形成有电子传输层。
- 根据权利要求14所述的有机显示装置,其中所述电子传输层和所述第二电极层之间还形成有空穴阻挡层。
- 根据权利要求15所述的有机显示装置,其中所述红外显示像素还包括有第二保护层,所述第二保护层与所述第一保护层形成一保护空间,所述第一电极层、空穴传输层、红外有机发光层、空穴阻挡层以及电子传输层均位于所述保护空间内。
- 根据权利要求13所述的有机显示装置,其中所述第一保护层包括有至少一层的聚合物层和至少一层的截止层,且所述聚合物层和截止层交替叠加设置。
- 根据权利要求9所述的有机显示装置,其中所述透明基底上还形成有扫描线、数据线、电源线以及开关阵列组件,所述红外显示像素通过所述关阵列组件连接所述扫描线、数据线以及电源线,并根据所述扫描线、数据线以及电源线的信号控制所述红外显示像素的开闭。
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| KR102350624B1 (ko) | 2017-03-08 | 2022-01-12 | 삼성디스플레이 주식회사 | 발광 표시 장치 |
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| CN107770309A (zh) * | 2017-10-18 | 2018-03-06 | 苏州大学 | 近红外发光像素在oled屏幕移动终端结构的应用 |
| CN114674401B (zh) * | 2022-03-24 | 2024-05-14 | 京东方科技集团股份有限公司 | 一种重量测试设备 |
| CN114784064A (zh) * | 2022-04-11 | 2022-07-22 | 深圳市华星光电半导体显示技术有限公司 | Oled显示面板和oled显示装置 |
| KR20240007971A (ko) * | 2022-07-08 | 2024-01-18 | 삼성디스플레이 주식회사 | 표시 장치 |
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| CN101710610A (zh) * | 2009-12-07 | 2010-05-19 | 河北工业大学 | 碱金属碳酸盐掺杂有机电子注入层的有机发光二极管 |
| CN202308075U (zh) * | 2011-11-10 | 2012-07-04 | 无锡信怡微电子有限公司 | 以二(8-羟基喹啉)合铂作为掺杂材料制备的oled器件 |
| CN102769025A (zh) * | 2012-08-06 | 2012-11-07 | 深圳市华星光电技术有限公司 | 有机电致发光二极管 |
| CN102832351A (zh) * | 2012-09-11 | 2012-12-19 | 深圳市华星光电技术有限公司 | 红外有机电致发光二极管 |
Also Published As
| Publication number | Publication date |
|---|---|
| US9634078B2 (en) | 2017-04-25 |
| CN102867921A (zh) | 2013-01-09 |
| US20150179726A1 (en) | 2015-06-25 |
| CN102867921B (zh) | 2015-11-25 |
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