WO2014033107A3 - Methoden zur farbortsteuerung von elektro-optischen bauteilen mit konversionselementen - Google Patents

Methoden zur farbortsteuerung von elektro-optischen bauteilen mit konversionselementen Download PDF

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Publication number
WO2014033107A3
WO2014033107A3 PCT/EP2013/067680 EP2013067680W WO2014033107A3 WO 2014033107 A3 WO2014033107 A3 WO 2014033107A3 EP 2013067680 W EP2013067680 W EP 2013067680W WO 2014033107 A3 WO2014033107 A3 WO 2014033107A3
Authority
WO
WIPO (PCT)
Prior art keywords
inorganic
electro
methods
optical components
conversion elements
Prior art date
Application number
PCT/EP2013/067680
Other languages
English (en)
French (fr)
Other versions
WO2014033107A2 (de
Inventor
Michael Dietz
Hans-Christoph Gallmeier
Stefan LISTL
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2014033107A2 publication Critical patent/WO2014033107A2/de
Publication of WO2014033107A3 publication Critical patent/WO2014033107A3/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

In verschiedenen Ausführungsformen wird ein Verfahren (100) zum Herstellen eines anorganischen, optoelektronischen Bauelementes (202), das Verfahren (100) aufweisend: Messen von mindestens einem Messparameter eines anorganischen, optoelektronischen Bauelement (202); und Bearbeiten des anorganischen, optoelektronischen Bauelements (202) unter Berücksichtigung des gemessenen Messparameterwertes des anorganischen optoelektronischen Bauelements (202), so dass die optoelektronischen Eigenschaften (104, 106, 108, 110) des anorganischen, optoelektronischen Bauelements (202) zu einer vorgegebenen optoelektronischen Ziel-Eigenschaft (102) hin verändert wird.
PCT/EP2013/067680 2012-08-28 2013-08-27 Methoden zur farbortsteuerung von elektro-optischen bauteilen mit konversionselementen WO2014033107A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102012215220.2 2012-08-28
DE201210215220 DE102012215220A1 (de) 2012-08-28 2012-08-28 Mehoden zur Farbortsteuerung von elektro-optischen Bauteilen mit Konversionselementen

Publications (2)

Publication Number Publication Date
WO2014033107A2 WO2014033107A2 (de) 2014-03-06
WO2014033107A3 true WO2014033107A3 (de) 2014-05-30

Family

ID=50098288

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2013/067680 WO2014033107A2 (de) 2012-08-28 2013-08-27 Methoden zur farbortsteuerung von elektro-optischen bauteilen mit konversionselementen

Country Status (2)

Country Link
DE (1) DE102012215220A1 (de)
WO (1) WO2014033107A2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2944931B1 (de) * 2014-05-15 2016-12-14 Diehl Aerospace GmbH Verfahren zum sortieren von lichtquellen in eine farbklasse
DE102015101573A1 (de) * 2015-02-04 2016-08-04 Osram Opto Semiconductors Gmbh Konversionselement und optoelektronisches Bauelement

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004056979A1 (de) * 2003-12-18 2005-07-21 Agilent Technologies, Inc. (n.d.Ges.d.Staates Delaware), Palo Alto Leuchtensteuersystem
JP2007317690A (ja) * 2006-05-23 2007-12-06 Fujikura Ltd 発光ダイオードの製造方法
US20090261358A1 (en) * 2008-03-31 2009-10-22 Cree, Inc. Emission tuning methods and devices fabricated utilizing methods
US20110018026A1 (en) * 2008-03-25 2011-01-27 Kabushiki Kaisha Toshiba Light emitting device, and method and apparatus for manufacturing same
DE112010000771T5 (de) * 2009-01-29 2012-07-26 Showa Denko K.K. Verfahren zum Schneiden eines Substrats und Verfahren zur Herstellung eines elektronischen Bauelemnents

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090117672A1 (en) * 2007-10-01 2009-05-07 Intematix Corporation Light emitting devices with phosphor wavelength conversion and methods of fabrication thereof
US7897419B2 (en) * 2008-12-23 2011-03-01 Cree, Inc. Color correction for wafer level white LEDs

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004056979A1 (de) * 2003-12-18 2005-07-21 Agilent Technologies, Inc. (n.d.Ges.d.Staates Delaware), Palo Alto Leuchtensteuersystem
JP2007317690A (ja) * 2006-05-23 2007-12-06 Fujikura Ltd 発光ダイオードの製造方法
US20110018026A1 (en) * 2008-03-25 2011-01-27 Kabushiki Kaisha Toshiba Light emitting device, and method and apparatus for manufacturing same
US20090261358A1 (en) * 2008-03-31 2009-10-22 Cree, Inc. Emission tuning methods and devices fabricated utilizing methods
DE112010000771T5 (de) * 2009-01-29 2012-07-26 Showa Denko K.K. Verfahren zum Schneiden eines Substrats und Verfahren zur Herstellung eines elektronischen Bauelemnents

Also Published As

Publication number Publication date
DE102012215220A1 (de) 2014-03-06
WO2014033107A2 (de) 2014-03-06

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