WO2014024804A1 - Photosensitive resin composition for permanent mask resist, photosensitive element, method for forming resist pattern, and method for producing printed wiring board - Google Patents

Photosensitive resin composition for permanent mask resist, photosensitive element, method for forming resist pattern, and method for producing printed wiring board Download PDF

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Publication number
WO2014024804A1
WO2014024804A1 PCT/JP2013/071060 JP2013071060W WO2014024804A1 WO 2014024804 A1 WO2014024804 A1 WO 2014024804A1 JP 2013071060 W JP2013071060 W JP 2013071060W WO 2014024804 A1 WO2014024804 A1 WO 2014024804A1
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group
epoxy resin
photosensitive
resin composition
hydrogen atom
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PCT/JP2013/071060
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French (fr)
Japanese (ja)
Inventor
華子 頼
絵美子 太田
泰治 村上
名越 俊昌
田中 恵生
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日立化成株式会社
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Priority to CN201380041388.3A priority Critical patent/CN104520768A/en
Priority to JP2014529476A priority patent/JPWO2014024804A1/en
Priority to KR20157001461A priority patent/KR20150042775A/en
Publication of WO2014024804A1 publication Critical patent/WO2014024804A1/en

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0313Organic insulating material
    • H05K1/032Organic insulating material consisting of one material
    • H05K1/0346Organic insulating material consisting of one material containing N
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/28Applying non-metallic protective coatings
    • H05K3/285Permanent coating compositions
    • H05K3/287Photosensitive compositions
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0073Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
    • H05K3/0076Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the composition of the mask

Definitions

  • the present invention relates to a photosensitive resin composition for permanent mask resist, a photosensitive element, a method for forming a resist pattern, and a method for producing a printed wiring board.
  • the resist image forming method by photolithography is a method in which a dry film type photosensitive resist is thermocompression-bonded on a substrate, or a liquid photosensitive resist is curtain-coated or spray-coated on a substrate, A resist image is formed by irradiating actinic rays such as ultraviolet rays through a negative mask and then developing.
  • a so-called direct drawing exposure method in which a resist pattern is directly drawn without using a mask pattern has attracted attention.
  • this direct drawing exposure method it is considered that a resist pattern can be formed with high productivity and high resolution, and it is possible to improve positional accuracy that can cope with various distortions of the substrate.
  • direct drawing exposure machines having a wide wavelength range of exposure wavelengths of 350 to 450 nm are becoming practically available.
  • the photosensitive resin compositions described in Patent Documents 1 and 2 have good sensitivity to light having an exposure wavelength of about 405 nm, in a direct drawing exposure machine having a wide wavelength range from 350 to 450 nm, The tolerance for the exposure amount is narrow, and it is difficult to form a resist pattern with good reproducibility between samples and within the same substrate.
  • the photosensitive resin compositions described in Patent Documents 3 to 6 are not compatible with a direct drawing exposure machine having a wide wavelength range of an exposure wavelength of 350 to 450 nm, and are resistant to heat as a permanent mask resist. There is room for improvement in forming a high-performance cured film excellent in moisture and heat resistance, adhesion, mechanical properties, and electrical properties.
  • the present invention relates to a photosensitive resin composition for permanent mask resist, which has a wide tolerance for exposure amount and can form a resist pattern with good reproducibility between samples and within the same substrate, a photosensitive element using the same, and a method for forming a resist pattern And it aims at providing the manufacturing method of a printed wiring board.
  • the present invention includes (A) an acid-modified vinyl group-containing epoxy resin, (B) a photopolymerization initiator, and (C) a nitroxyl compound, and (C) the nitroxyl compound is represented by the following general formula (1).
  • a photosensitive resin composition for a permanent mask resist containing the represented compound.
  • R 1 is a hydroxy group, an alkyl group having 1 to 5 carbon atoms, an acetamide group, an amino group, a chloroacetamide group, a cyano group, a benzoyloxy group, or a group represented by the following general formula (2) Indicates.
  • n1 represents an integer of 1 to 12.
  • a photosensitive resin composition it is possible to widen the exposure tolerance, and it is possible to form a resist pattern with good reproducibility between samples and within the same substrate, particularly with good reproducibility of via shape. It is. In addition, it is possible to perform resist pattern formation using exposure light in the wavelength range of 350 nm to 450 nm and resist pattern formation by a direct drawing exposure method with sufficient sensitivity and resolution.
  • a high-performance cured film excellent in heat resistance, heat and humidity resistance, adhesion, mechanical properties, and electrical properties can be formed. It can be suitably used for the production of high-density multilayer boards and semiconductor packages.
  • the photosensitive resin composition of the present invention uses the exposure light in the wavelength range of 350 nm to 450 nm while maintaining excellent properties of developability, adhesion, heat resistance and solvent resistance as a solder resist due to the above configuration. Therefore, the resist pattern can be formed with better sensitivity and resolution, and in particular, the exposure tolerance can be improved.
  • the content of the (A) acid-modified vinyl group-containing epoxy resin is preferably 25% by mass or more based on the total solid content of the photosensitive resin composition.
  • the (A) acid-modified vinyl group-containing epoxy resin includes a novolac type epoxy resin represented by the following general formula (3), a bisphenol type epoxy resin represented by the following general formula (4), and the following general formula (5 A resin obtained by reacting at least one epoxy resin (a) selected from the group consisting of salicylaldehyde-type epoxy resins represented by (1) with a vinyl group-containing monocarboxylic acid (b). preferable.
  • R 6 represents a hydrogen atom or a methyl group
  • Y 1 represents a hydrogen atom or a glycidyl group (wherein hydrogen atom / glycidyl group (molar ratio) is 0/100 to 30/70).
  • N 2 represents an integer of 1 or more.
  • a plurality of R 6 and Y 1 may be the same or different.
  • R 7 represents a hydrogen atom or a methyl group
  • Y 2 represents a hydrogen atom or a glycidyl group (wherein hydrogen atom / glycidyl group (molar ratio) is 0/100 to 30/70).
  • N 3 represents an integer of 1 or more.
  • a plurality of R 7 and Y 2 may be the same or different.
  • Y 3 represents a hydrogen atom or a glycidyl group (wherein hydrogen atom / glycidyl group (molar ratio) is 0/100 to 30/70), and n 4 represents an integer of 1 or more.
  • a plurality of Y 3 may be the same or different.
  • the present invention also provides a photosensitive element comprising a photosensitive layer made of the above-described photosensitive resin composition for permanent mask resist on a support.
  • the present invention also includes a lamination step of laminating a photosensitive layer composed of the photosensitive resin composition for a permanent mask resist or a photosensitive layer of the photosensitive element on a substrate, and irradiating the photosensitive layer with an actinic ray in an image form.
  • a resist pattern forming method including an exposure step of photocuring an exposed portion and a developing step of removing a region other than the exposed portion.
  • the present invention further provides a method for producing a printed wiring board, wherein a permanent mask is formed on a substrate by the method for forming a resist pattern of the present invention.
  • the photosensitive resin composition of the present invention since the photosensitive resin composition of the present invention is used, characteristics excellent in developability, adhesion, heat resistance, and solvent resistance are obtained.
  • the resist pattern can be formed with sufficient sensitivity and resolution using exposure light within a wavelength range of 350 nm to 450 nm while maintaining the same. Further, it is possible to efficiently form a cured film such as a permanent mask (solder resist) that can form a resist pattern with good reproducibility such as a via shape between samples and within the same substrate with a wide tolerance to the exposure amount.
  • the present invention relates to a photosensitive resin composition for permanent mask resist, which has a wide tolerance for exposure amount and can form a resist pattern with good reproducibility between samples and within the same substrate, a photosensitive element using the same, and a method for forming a resist pattern And the manufacturing method of a printed wiring board can be provided.
  • FIG. 5E is a schematic cross-sectional view showing a pattern forming process
  • FIG. 5E is a schematic cross-sectional view showing a permanent mask resist forming process.
  • A) is a schematic cross section which shows an electroless gold Ni plating process
  • (b) is a schematic cross section which shows an electrolytic gold plating process.
  • (meth) acrylic acid in the present invention means acrylic acid or methacrylic acid, and the same applies to other similar expressions such as (meth) acrylate.
  • the photosensitive resin composition of the present invention comprises (A) an acid-modified vinyl group-containing epoxy resin (hereinafter sometimes referred to as “component (A)”) and (B) a photopolymerization initiator (hereinafter sometimes referred to as “( B) component ”) and (C) a nitroxyl compound (hereinafter sometimes referred to as” (C) component ").
  • component (A) an acid-modified vinyl group-containing epoxy resin
  • component (B) component ) a photopolymerization initiator
  • C a nitroxyl compound
  • the component (A) is an epoxy resin containing an acid-modified vinyl group.
  • a resin obtained by modifying an epoxy resin with a vinyl group-containing monocarboxylic acid can be used.
  • a novolac type epoxy resin represented by the following general formula (3), a bisphenol A type epoxy resin or a bisphenol F type epoxy resin represented by the following general formula (4), and the following general formula ( 5) Use of a resin obtained by reacting at least one epoxy resin (a) selected from the group consisting of salicylaldehyde type epoxy resins represented by 5) with a vinyl group-containing monocarboxylic acid (b). Is preferred.
  • R 6 represents a hydrogen atom or a methyl group
  • Y 1 represents a hydrogen atom or a glycidyl group (wherein hydrogen atom / glycidyl group (molar ratio) is 0/100 to 30/70).
  • N 2 represents an integer of 1 or more.
  • a plurality of R 6 and Y 1 may be the same or different.
  • R 7 represents a hydrogen atom or a methyl group
  • Y 2 represents a hydrogen atom or a glycidyl group (wherein hydrogen atom / glycidyl group (molar ratio) is 0/100 to 30/70).
  • N 3 represents an integer of 1 or more.
  • a plurality of R 7 and Y 2 may be the same or different.
  • Y 3 represents a hydrogen atom or a glycidyl group (wherein hydrogen atom / glycidyl group (molar ratio) is 0/100 to 30/70), and n 4 represents an integer of 1 or more.
  • a plurality of Y 3 may be the same or different.
  • reaction product (A ′) In addition to the reaction product of the epoxy resin (a) and the vinyl group-containing monocarboxylic acid (b) (hereinafter referred to as “reaction product (A ′)”), the component (A) is a reaction product ( An addition reaction product obtained by adding a saturated or unsaturated group-containing polybasic acid anhydride (c) to A ′) is also used.
  • a hydroxyl group is formed by the addition reaction of the epoxy group of the epoxy resin (a) and the carboxyl group of the vinyl group-containing monocarboxylic acid (b), and the next reaction And the resulting hydroxyl group (including the hydroxyl group originally contained in the epoxy resin (a)) and the acid anhydride group of the saturated or unsaturated group-containing polybasic acid anhydride (c) undergo a half-ester reaction. Inferred.
  • Examples of the novolak type epoxy resin represented by the general formula (3) include a phenol novolak type epoxy resin and a cresol novolak type epoxy resin. These novolak-type epoxy resins can be obtained by, for example, reacting a phenol novolak resin or a cresol novolak resin with epichlorohydrin by a known method.
  • the bisphenol A type epoxy resin or bisphenol F type epoxy resin in which Y 2 is a glycidyl group is, for example, a bisphenol A type represented by the following general formula (6). It can be obtained by reacting a hydroxyl group of epoxy resin or bisphenol F type epoxy resin with epichlorohydrin.
  • R 7 represents a hydrogen atom or a methyl group
  • n 3 represents an integer of 1 or more.
  • a plurality of R 7 may be the same or different.
  • the reaction is preferably carried out in a polar organic solvent such as dimethylformamide, dimethylacetamide or dimethylsulfoxide in the presence of an alkali metal hydroxide at a reaction temperature of 50 to 120 ° C.
  • a polar organic solvent such as dimethylformamide, dimethylacetamide or dimethylsulfoxide
  • an alkali metal hydroxide at a reaction temperature of 50 to 120 ° C.
  • salicylaldehyde type epoxy resin represented by the above general formula (5) include FAE-2500, EPPN-501H, EPPN-502H (the product name, manufactured by Nippon Kayaku Co., Ltd.) and the like.
  • Examples of the vinyl group-containing monocarboxylic acid (b) include acrylic acid, a dimer of acrylic acid, methacrylic acid, ⁇ -furfurylacrylic acid, ⁇ -styrylacrylic acid, cinnamic acid, crotonic acid, and ⁇ - And cyanocinnamic acid.
  • a half-ester compound which is a reaction product of a hydroxyl group-containing acrylate and a saturated or unsaturated dibasic acid anhydride and a vinyl group-containing monoglycidyl ether or vinyl group-containing monoglycidyl ester and a saturated or unsaturated dibasic acid anhydride
  • the half-ester compound which is a reaction product with is mentioned.
  • These vinyl group-containing monocarboxylic acids (b) can be used singly or in combination of two or more.
  • Examples of the hydroxyl group-containing acrylate used in the synthesis of the half ester compound as an example of the vinyl group-containing monocarboxylic acid (b) include hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, and hydroxybutyl (meth) acrylate. , Polyethylene glycol mono (meth) acrylate, trimethylolpropane di (meth) acrylate, pentaerythritol tri (meth) acrylate and dipentaerythritol penta (meth) acrylate.
  • Examples of the vinyl group-containing monoglycidyl ester include glycidyl acrylate and glycidyl methacrylate.
  • saturated or unsaturated dibasic acid anhydride used in the synthesis of the half ester compound examples include succinic anhydride, maleic anhydride, tetrahydrophthalic anhydride, phthalic anhydride, methyltetrahydrophthalic anhydride, and ethyltetrahydrophthalic anhydride. Acids, hexahydrophthalic anhydride, methylhexahydrophthalic anhydride, ethylhexahydrophthalic anhydride and itaconic anhydride.
  • the vinyl group-containing monocarboxylic acid (b) is 0.6 to 1.
  • the reaction is preferably carried out at a ratio of 05 equivalents, more preferably carried out at a ratio of 0.8 to 1.05 equivalents, particularly preferably carried out at a ratio of 0.9 to 1.0 equivalents.
  • the epoxy resin (a) and the vinyl group-containing monocarboxylic acid (b) are preferably dissolved and reacted in an organic solvent.
  • organic solvent include ketones such as ethyl methyl ketone and cyclohexanone, aromatic hydrocarbons such as toluene, xylene, and tetramethylbenzene, methyl cellosolve, butyl cellosolve, methyl carbitol, butyl carbitol, propylene glycol monomethyl ether, Glycol ethers such as dipropylene glycol monoethyl ether, dipropylene glycol diethyl ether and triethylene glycol monoethyl ether, esters such as ethyl acetate, butyl acetate, butyl cellosolve acetate and carbitol acetate, aliphatic carbonization such as octane and decane
  • Examples include hydrogen and petroleum-based solvents such as petroleum ether, petroleum naph
  • a catalyst to promote the reaction.
  • the catalyst used include triethylamine, benzylmethylamine, methyltriethylammonium chloride, benzyltrimethylammonium chloride, benzyltrimethylammonium bromide, benzyltrimethylmethylammonium iodide, and triphenylphosphine.
  • the amount of the catalyst used is preferably 0.1 to 10 parts by mass with respect to 100 parts by mass in total of the epoxy resin (a) and the vinyl group-containing monocarboxylic acid (b).
  • a polymerization inhibitor for the purpose of preventing polymerization during the reaction.
  • the polymerization inhibitor include hydroquinone, methyl hydroquinone, hydroquinone monomethyl ether, catechol and pyrogallol.
  • the amount of the polymerization inhibitor used is preferably 0.01 to 1 part by mass with respect to 100 parts by mass in total of the epoxy resin (a) and the vinyl group-containing monocarboxylic acid (b).
  • the reaction temperature is preferably 60 to 150 ° C., more preferably 80 to 120 ° C.
  • a vinyl group-containing monocarboxylic acid (b) and a phenolic compound such as p-hydroxyphenethyl alcohol, trimellitic anhydride, pyromellitic anhydride, benzophenonetetracarboxylic anhydride, biphenyltetracarboxylic acid
  • a polybasic acid anhydride such as an anhydride can be used in combination.
  • the acid-modified vinyl group-containing epoxy resin has a wide tolerance with respect to the exposure amount, and the above-mentioned reaction product is formed in that a resist pattern with good reproducibility such as a via shape is formed between samples and within the same substrate. It is preferable to use a resin obtained by reacting the product (A ′) with a saturated or unsaturated group-containing polybasic acid anhydride (c).
  • saturated or unsaturated group-containing polybasic acid anhydride (c) examples include compounds exemplified as the saturated or unsaturated dibasic acid anhydride used in the synthesis of the half ester compound.
  • the saturated or unsaturated group-containing polyhydric acid is used with respect to 1 equivalent of the hydroxyl group in the reaction product (A ′).
  • the acid value of the acid-modified vinyl group-containing epoxy resin (A) can be adjusted.
  • a polyurethane compound obtained by reacting an epoxy acrylate compound having two or more hydroxyl groups and a vinyl group, a diisocyanate compound, and a diol compound having a carboxyl group may be used.
  • Such polyurethane compounds are commercially available, for example, as UXE-3011, UXE-3012, UXE-3024 (above, Nippon Kayaku Co., Ltd., trade name).
  • the acid value of the acid-modified vinyl group-containing epoxy resin is preferably 30 to 150 mgKOH / g, more preferably 50 to 120 mgKOH / g, and still more preferably 60 to 100 mgKOH / g.
  • the acid value of the component (A) can be measured as follows.
  • a resin whose acid value is to be measured is precisely weighed, and then 30 g of acetone is added to this resin to dissolve it uniformly.
  • the resin contains a volatile component such as a synthetic solvent or a dilution solvent
  • the resin is heated in advance at a temperature about 10 ° C. higher than the boiling point of the volatile component for 1 to 4 hours to remove the volatile component.
  • an appropriate amount of phenolphthalein as an indicator is added to the solution, and titration is performed using a 0.1N potassium hydroxide (KOH) aqueous solution.
  • KOH potassium hydroxide
  • the acid value is determined by calculating the number of mg of KOH required to neutralize the acetone solution of the resin to be measured.
  • Acid value 0.1 ⁇ Vf ⁇ 56.1 / (Wp ⁇ I / 100)
  • Vf represents the titration amount (mL) of KOH
  • Wp represents the weight (g) of the solution containing the measured resin
  • I represents the non-volatile content (mass%) in the solution containing the measured resin.
  • reaction temperature between the reaction product (A ′) and the saturated or unsaturated group-containing polybasic acid anhydride (c) is preferably 60 to 120 ° C.
  • epoxy resin (a) for example, a hydrogenated bisphenol A type epoxy resin can be partially used together.
  • (A) acid-modified vinyl group-containing epoxy resin styrene-maleic anhydride copolymer modified with hydroxyethyl (meth) acrylate or styrene-maleic anhydride copolymer modified with hydroxyethyl (meth) acrylate
  • Some styrene-maleic acid resins such as products can be used in combination.
  • the content of the component (A) is preferably 25 to 70% by mass, more preferably 30 to 70% by mass, based on the total solid content of the photosensitive resin composition.
  • the content is 35 to 65% by mass.
  • component (B) examples include benzoin compounds such as benzoin, benzoin methyl ether, and benzoin isopropyl ether; benzophenone, methylbenzophenone, 4,4′-dichlorobenzophenone, 4,4′-bis (diethylamino) benzophenone, Michler's ketone, 4 -Benzophenone compounds such as benzoyl-4'-methyldiphenyl sulfide; acetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxy-2-phenylacetophenone, 1,1-dichloroacetophenone, 1-hydroxycyclohexylphenyl Ketone, 2-methyl-1- (4-methylthiophenyl) -2-morpholinopropan-1-one, 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -Acetophenone compounds such as butanone-1, (2,2-diethoxyacetophenone, N, N
  • 2- (o-chlorophenyl) -4,5-diphenylimidazole dimer 2- (o-chlorophenyl) -4,5-di (m-methoxyphenyl) imi 2,4,5-triarylimidazole dimer such as sol dimer; acridine derivative such as 9-phenylacridine, 1,7-bis (9,9′-acridinyl) heptane; 2,4,6-trimethyl Phosphine oxide compounds such as benzoyldiphenylphosphine oxide and bis (2,4,6-trimethylbenzoyl) -phenylphosphine oxide, and 1,2-octanedione, 1- [4- (phenylthio)-, 2- (O-benzoyloxime) )], Ethanone, oxime compounds such as 1- [9-ethyl-6- (2-methylbenzoyl) -9H-carbazol-3-yl]-, 1- (O-acetyloxime); anthracen
  • the content of the component (B) is preferably 0.5 to 30 parts by mass, based on 100 parts by mass of the total amount of the component (A), preferably 0.5 to 20 parts by mass. More preferred is 0.5 to 15 parts by mass. If this content is 0.5 parts by mass or more, the photosensitivity tends to be improved, and if it is 30 parts by mass or less, the heat resistance of the cured film tends to be improved.
  • nitroxyl compound which is (C) component is a compound which has a nitroxyl group represented by the following structural formula.
  • a component contains the compound represented by following General formula (1).
  • R 1 is a hydroxy group, an alkyl group having 1 to 5 carbon atoms, an acetamide group, an amino group, a chloroacetamide group, a cyano group, a benzoyloxy group, or a group represented by the following general formula (2) Indicates.
  • n1 represents an integer of 1 to 12.
  • R 1 is preferably a hydroxy group, an acetamido group or a benzoyloxy group.
  • Examples of the compound represented by the formula (1) include 4-hydroxy-2,2,6,6-tetramethylpiperidine-1-oxyl free radical, 4-hydroxy-2,2,6,6-tetramethyl.
  • Piperidine-1-oxylbenzoate free radical 4-acetamido-2,2,6,6-tetramethylpiperidine-1-oxyl free radical, 4-amino-2,2,6,6-tetramethylpiperidine-1-oxyl Free radical, 4- (2-chloroacetamido) -2,2,6,6-tetramethylpiperidine-1-oxyl free radical, 4-cyano-2,2,6,6-tetramethylpiperidine-1-oxyl free
  • radicals and 4-methoxy-2,2,6,6-tetramethylpiperidine-1-oxyl free radical include radicals and 4-methoxy-2,2,6,6-tetramethylpiperidine-1-oxyl free radical.
  • component (C) examples include 2,2,6,6-tetramethylpiperidine-1-oxyl free radical. These compounds can be used in combination with the compound represented by the general formula (1), but are difficult to use alone because of their high volatility.
  • the content of the component (C) is preferably 0.005 to 10 parts by mass, and 0.01 to 8 parts by mass based on 100 parts by mass of the total amount of the component (A). More preferred is 0.01 to 5 parts by mass.
  • the content is 0.005 parts by mass or more, the effect can be obtained more reliably, and when the content is 10 parts by mass or less, the sensitivity tends to be improved.
  • the photosensitive resin composition preferably contains (D) an epoxy resin (hereinafter sometimes referred to as “component (D)”) from the viewpoint of further improving the solvent resistance.
  • component (D) Epoxy resins include bisphenol A type epoxy resins such as bisphenol A diglycidyl ether, bisphenol F type epoxy resins such as bisphenol F diglycidyl ether, bisphenol S type epoxy resins such as bisphenol S diglycidyl ether, and biphenol diglycidyl.
  • Biphenol type epoxy resins such as ether, bixylenol type epoxy resins such as bixylenol diglycidyl ether, hydrogenated bisphenol A type epoxy resins such as hydrogenated bisphenol A glycidyl ether, and these dibasic acid-modified diglycidyl ether type epoxy resins, Biphenyl aralkyl type epoxy resin, tris (2,3-epoxypropyl) isocyanurate and the like can be mentioned. These are used alone or in combination of two or more.
  • the component (D) is different from the component (A).
  • examples of bisphenol A diglycidyl ether include Epicoat 828, Epicoat 1001, Epicoat 1002 (all manufactured by Japan Epoxy Resin Co., Ltd.), and the like.
  • examples of bisphenol F diglycidyl ether include Epicoat 807 (manufactured by Japan Epoxy Resin Co., Ltd.) and YSLV-80 (manufactured by Nippon Steel Chemical Co., Ltd.).
  • Examples of bisphenol S diglycidyl ether include EBPS-200 (manufactured by Nippon Kayaku Co., Ltd.). And Epicron EXA-1514 (manufactured by Dainippon Ink & Chemicals, Inc.).
  • examples of biphenol diglycidyl ether include YL6121 (manufactured by Japan Epoxy Resin Co., Ltd.), and examples of bixylenol diglycidyl ether include YX4000H (manufactured by Japan Epoxy Resin Co., Ltd.).
  • examples of the hydrogenated bisphenol A glycidyl ether include ST-2004 and ST-2007 (both manufactured by Tohto Kasei Co., Ltd.).
  • phenol biphenyl aralkyl type epoxy resin examples include NC-3000H (manufactured by Nippon Kayaku Co., Ltd.). These may be used alone or in combination of two or more.
  • a bisphenol F type epoxy resin in terms of crack resistance, it is preferable to contain a bisphenol F type epoxy resin, a phenol biphenyl aralkyl type epoxy resin, or a bisphenol novolac type epoxy resin.
  • the bisphenol F type epoxy resin include YSLV-80 (manufactured by Nippon Steel Chemical Co., Ltd.).
  • the phenol biphenyl aralkyl type epoxy resin include NC-3000H (manufactured by Nippon Kayaku Co., Ltd.).
  • the bisphenol novolac type epoxy resin is available as EXA-7372 (bisphenol F type novolac type epoxy resin, manufactured by DIC), 157S70 (bisphenol A type novolak type polyfunctional epoxy resin, manufactured by Mitsubishi Chemical Corporation). These may be used alone or in combination of two or more.
  • the content thereof is preferably 1 part by mass to 50 parts by mass, and more preferably 5 parts by mass to 50 parts by mass with respect to 100 parts by mass of the component (A).
  • the amount is more preferably 10 to 50 parts by weight, and particularly preferably 20 to 40 parts by weight.
  • the photosensitive resin composition further contains a diluent.
  • a diluent for example, an organic solvent and / or a photopolymerizable monomer can be used.
  • the organic solvent include ketones such as ethyl methyl ketone and cyclohexanone; aromatic hydrocarbons such as toluene, xylene and tetramethylbenzene; methyl cellosolve, butyl cellosolve, methyl carbitol, butyl carbitol, propylene glycol monomethyl ether, Glycol ethers such as dipropylene glycol monoethyl ether, dipropylene glycol diethyl ether and triethylene glycol monoethyl ether; esters such as ethyl acetate, butyl acetate, butyl cellosolve acetate and carbitol acetate; aliphatic carbonization such as octane and decane Examples include hydrogen and
  • photopolymerizable monomer examples include hydroxyalkyl (meth) acrylates such as 2-hydroxyethyl (meth) acrylate and 2-hydroxypropyl (meth) acrylate; ethylene glycol, methoxytetraethylene glycol, polyethylene glycol and the like.
  • diluents are used singly or in combination of two or more.
  • content of the organic solvent can be suitably adjusted for the purpose of adjusting the viscosity of the photosensitive resin composition.
  • the content thereof is preferably 0.5 to 40 parts by weight, more preferably 1 to 30 parts by weight, based on 100 parts by weight of the total amount of component (A). . If the content is 0.5 parts by mass or more, the photosensitivity is improved and the exposed part tends to be prevented from being eluted during development, and if it is 40 parts by mass or less, the heat resistance of the cured film is improved. Tend.
  • the photosensitive resin composition according to the present embodiment can contain a curing agent.
  • the curing agent reacts with heat, ultraviolet rays, etc., with a compound that cures itself by heat, ultraviolet rays, or the carboxyl group or hydroxyl group in component (A) which is a photocurable resin component in the photosensitive resin composition.
  • a compound that cures by heating is preferred.
  • the curing agent examples include an epoxy compound, a melamine compound, a urea compound, an oxazoline compound, and a block isocyanate compound as a thermosetting compound.
  • the epoxy compound examples include bisphenol A type epoxy resin, bisphenol F type epoxy resin, hydrogenated bisphenol A type epoxy resin, brominated bisphenol A type epoxy resin, novolac type epoxy resin, bisphenol S type epoxy resin, and biphenyl type epoxy resin. And heterocyclic epoxy resins such as triglycidyl isocyanurate and bixylenol type epoxy resins.
  • the melamine compound include triaminotriazine, hexamethoxymelamine, and hexabutoxylated melamine.
  • the urea compound examples include dimethylol urea. These hardening
  • curing agents are used individually by 1 type or in combination of 2 or more types.
  • the content thereof is preferably 1 to 60 parts by mass based on 100 parts by mass of the total amount of component (A), and preferably 5 to 50 parts by mass. More preferred. When this content is 1 part by mass or more, the heat resistance of the final cured coating film tends to be improved, and when it is 60 parts by mass or less, the developability tends to improve.
  • the photosensitive resin composition according to this embodiment preferably contains an epoxy resin curing agent for the purpose of further improving various properties such as heat resistance, adhesion, and chemical resistance of the cured film.
  • epoxy resin curing agents include, for example, 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methyl Imidazole derivatives such as -5-hydroxymethylimidazole; guanamines such as acetoguanamine and benzoguanamine; diaminodiphenylmethane, m-phenylenediamine, m-xylenediamine, diaminodiphenylsulfone, dicyandiamide, urea, urea derivatives, melamine, polybasic hydrazide, etc.
  • organic acid salts and / or epoxy adducts include amine complexes of boron trifluoride; ethyldiamino-S-triazine, 2,4-diamino-S-triazine, 2,4-diamino-6-xylyl- Triazine derivatives such as triazine; trimethylamine, triethanolamine, N, N-dimethyloctylamine, N-benzyldimethylamine, pyridine, N-methylmorpholine, hexa (N-methyl) melamine, 2,4,6-tris Tertiary amines such as (dimethylaminophenol), tetramethylguanidine, m-aminophenol; polyphenols such as polyvinylphenol, polyvinylphenol bromide, phenol novolac, alkylphenol novolac; tributylphosphine, triphenylphosphine, tris-2- Organic phosphines such
  • epoxy resin curing agents are used singly or in combination of two or more.
  • the content thereof is preferably 1 to 60 parts by mass, and more preferably 5 to 50 parts by mass based on 100 parts by mass of the total amount of component (A).
  • the photosensitive resin composition according to the present embodiment further includes barium sulfate, barium titanate, silica, talc, and calcined kaolin for the purpose of further improving various properties such as adhesion and coating film hardness.
  • known inorganic fillers such as magnesium carbonate, aluminum oxide, aluminum hydroxide, and mica can be contained. These can be used alone or in combination of two or more.
  • silica or barium sulfate is preferable from the viewpoint of improving the printability and the hardness of the cured film.
  • the inorganic filler When the inorganic filler is used, its content is preferably 1 to 200 parts by weight, more preferably 5 to 150 parts by weight, based on 100 parts by weight of the total amount of component (A). More preferably, it is ⁇ 120 parts by mass.
  • photosensitive resin composition if necessary, known colorants such as phthalocyanine blue, phthalocyanine green, iodine green, diazo yellow, crystal violet, titanium oxide, carbon black, naphthalene black; hydroquinone, methylhydroquinone Polymerization inhibitors such as hydroquinone monomethyl ether, catechol and pyrogallol; thickeners such as benton and montmorillonite; silicone, fluorine and vinyl resin antifoaming agents; and various conventional and conventional additives such as silane coupling agents Can be used.
  • known colorants such as phthalocyanine blue, phthalocyanine green, iodine green, diazo yellow, crystal violet, titanium oxide, carbon black, naphthalene black
  • hydroquinone methylhydroquinone
  • Polymerization inhibitors such as hydroquinone monomethyl ether, catechol and pyrogallol
  • thickeners such as benton and montmorillonite
  • flame retardants such as brominated epoxy compounds, acid-modified brominated epoxy compounds, antimony compounds, phosphate compounds phosphate compounds, aromatic condensed phosphate esters, halogen-containing condensed phosphate esters, adhesion imparting agents, leveling agents, Antioxidants, pigments and the like can be used.
  • the photosensitive resin composition can be obtained by uniformly kneading or mixing each of the above-described blending components with a roll mill, a bead mill or the like.
  • Photosensitive resin compositions are used in the field of electronic materials such as solder resists in printed wiring boards, interlayer insulation films in high-density multilayer boards, solder resists for semiconductor packages, and image resistance, heat resistance, adhesion, mechanical properties, and chemical resistance. It is useful as a permanent mask resist having excellent properties and electrical characteristics.
  • the photosensitive element according to this embodiment includes a support and a photosensitive layer provided on the support.
  • the photosensitive layer is a layer made of the above-described photosensitive resin composition.
  • the photosensitive element may be coated with a protective film on the surface on the photosensitive layer opposite to the support.
  • the photosensitive layer is formed by dissolving the photosensitive resin composition according to this embodiment in the above solvent or mixed solvent to obtain a solution having a solid content of about 30 to 70% by mass, and then applying this solution on a support. It is preferable.
  • the thickness of the photosensitive layer varies depending on the application, but is preferably 10 to 100 ⁇ m, more preferably 20 to 60 ⁇ m, after drying after removing the solvent by heating and / or hot air blowing.
  • Examples of the support provided in the photosensitive element include polymer films having heat resistance and solvent resistance such as polyethylene terephthalate, polypropylene, polyethylene, and polyester.
  • the thickness of the support is preferably 5 to 100 ⁇ m, more preferably 10 to 30 ⁇ m.
  • the photosensitive element consisting of two layers of the support and the photosensitive layer as described above or the photosensitive element consisting of three layers of the support, the photosensitive layer and the protective film may be stored as it is, for example. After interposing, it may be wound around the core in a roll shape and stored.
  • the method for forming a resist pattern according to an embodiment of the present invention includes a laminating step of laminating a photosensitive layer made of the above-described photosensitive resin composition on a substrate, and an exposed portion by irradiating the photosensitive layer with an actinic ray in an image form. Is an exposure process for photo-curing, and a development process for removing regions other than the exposed area.
  • Lamination of the photosensitive layer on the substrate is performed by coating the photosensitive resin composition with a method such as screen printing, spraying, roll coating, curtain coating, electrostatic coating, etc.
  • the film can be applied on the substrate with a film thickness of 5 mm and dried at 60 to 110 ° C.
  • the photosensitive element includes a protective film
  • the protective film is removed, and then the photosensitive layer is heated to about 70 ° C. to 130 ° C. while being applied to the substrate at about 0.1 MPa to 1 MPa (1 kgf). / Cm 2 to 10 kgf / cm 2 ).
  • Such a lamination process may be performed under reduced pressure.
  • the surface of the substrate on which the photosensitive layer is laminated is usually a metal surface, but is not particularly limited.
  • the photosensitive layer laminated on the substrate in this way is irradiated with actinic rays in the form of an image to photocur the exposed portion.
  • Examples of the method of irradiating actinic rays in the form of an image include a method using a negative mask pattern and a direct drawing exposure method.
  • a support is present on the photosensitive layer.
  • This support is transparent to actinic rays, the support is present.
  • An actinic ray can be irradiated through.
  • the photosensitive layer is irradiated with actinic rays after the support is removed.
  • a conventionally known light source can be used as the active light source.
  • a lamp that effectively emits actinic rays such as an ultraviolet ray such as a carbon arc lamp, a mercury vapor arc lamp, a high-pressure mercury lamp, an ultra-high pressure mercury lamp, or a xenon lamp, a gas laser such as an argon laser, or a solid laser such as a YAG laser is used.
  • a region other than the exposed portion is removed by development to form a resist pattern.
  • a method for removing such an unexposed portion for example, when a support is present on the photosensitive layer, the support is removed with an auto peeler or the like, and wet development with a developer such as an alkaline aqueous solution, an aqueous developer, or an organic solvent is performed. Or a method of developing by removing an unexposed portion by dry development or the like.
  • Examples of the alkaline aqueous solution used for wet development include a dilute solution of 0.1% by mass to 5% by mass of sodium carbonate, a dilute solution of 0.1-5% by mass of potassium carbonate, and 0.1% by mass to 5% by mass of hydroxide. A dilute solution of sodium and the like can be mentioned.
  • the pH of the alkaline aqueous solution is preferably in the range of 9 to 11, and the temperature is adjusted according to the developability of the photosensitive layer. Moreover, you may mix surfactant, an antifoamer, an organic solvent, etc. in alkaline aqueous solution.
  • Examples of the development method include a dip method, a spray method, brushing, and slapping.
  • the exposed portion is sufficiently cured by post-exposure (ultraviolet light exposure) and / or post-heating to obtain a cured film.
  • the post-exposure is preferably performed with an exposure amount of 1 to 5 J / cm 2 .
  • Post-heating is preferably performed at 100 to 200 ° C. for 30 minutes to 12 hours.
  • the circuit forming substrate on which the resist pattern is formed by the above resist pattern forming method is etched or plated.
  • the resist pattern made of the photosensitive resin composition functions effectively as a permanent mask resist having excellent image forming properties, heat resistance, adhesion, mechanical properties, chemical resistance, electrical properties, and the like.
  • the photosensitive resin composition which concerns on this embodiment can be used suitably for formation of the permanent mask resist of the printed wiring board for buildup boards. That is, according to the present embodiment, it is possible to provide a build-up substrate having a permanent mask resist made of a cured product of the above-described photosensitive resin composition.
  • 1 and 2 show an example in which a permanent mask resist is formed on a printed wiring board for a buildup board.
  • FIG. 1 (a) is a schematic cross-sectional view showing a core base material on which a buildup layer has been formed.
  • a copper wiring 2 is formed on the core substrate 1.
  • the photosensitive layer 3 made of the photosensitive resin composition according to the present embodiment is formed on a substrate by lamination or coating (see FIG. 1B).
  • the photosensitive layer 3 is exposed through an exposure mask 4 having a desired pattern (see FIG. 1C).
  • development is performed to form a resist pattern having a desired opening (see FIG. 1D).
  • a permanent mask resist 5 is formed on the substrate by exposing and heating the formed resist pattern (see FIG. 1E).
  • electroless Ni gold plating is performed to provide an electroless Ni gold plating layer 6 (see FIG. 2A), and further, a step of performing electrolytic gold plating is performed to form an electrolytic gold plating layer 7 ( As shown in FIG. 2B, a build-up substrate is formed.
  • the obtained solution is cooled to 50 ° C., 2 parts by mass of triphenylphosphine and 75 parts by mass of solvent naphtha are added thereto, heated to 100 ° C., and reacted until the solid content acid value becomes 1 mgKOH / g or less. I let you.
  • the obtained solution was cooled to 50 ° C., and 745 parts by mass of tetrahydrophthalic anhydride, 75 parts by mass of carbitol acetate and 75 parts by mass of solvent naphtha were added as component (c), and reacted at 80 ° C. for 3 hours. I let you.
  • an unsaturated group-containing polycarboxylic acid resin (resin A) having a solid content acid value of 80 mgKOH / g and a solid content of 62% by mass was obtained as the component (A).
  • Examples 1 to 12 and Comparative Examples 1 to 5 After blending the composition according to the blending composition (unit: part by mass) shown in Table 1 below, carbitol acetate was added so that the solid content concentration would be 70% by weight to obtain a photosensitive resin composition.
  • the compounding quantity of each component in following Table 1 shows the compounding quantity of solid content.
  • (A) Component EXP-2810 Cresol novolac type acid-modified epoxy acrylate (weight average molecular weight 7000, acid value 65 mg KOH / g, manufactured by DIC), ZAR-1753: Bisphenol A acid-modified epoxy acrylate (weight average molecular weight 10,000, acid value 70 mg KOH / g, manufactured by Nippon Kayaku Co., Ltd.)
  • UXE-3024 urethane-modified bisphenol A acid-modified epoxy acrylate (weight average molecular weight 10,000, acid value 67 mgKOH / g, manufactured by Nippon Kayaku Co., Ltd.)
  • DPHA dipentaerythritol hexaacrylate
  • C11-A imidazole compound (manufactured by Shikoku Kasei Kogyo Co., Ltd.)
  • ESLV-120TE 1,3,5-triglycidyl isocyanate (manufactured by Nippon Steel Chemical Co., Ltd.)
  • TBC 4-t-butylcatechol (manufactured by DIC), Phthalocyanine green: (Sanyo dye company) ⁇ -glycidoxypropyltriethoxysilane: (manufactured by Shin-Etsu Silicone), Barium sulfate: B-30 (manufactured by Sakai Chemical) Silica: SC-2050 (manufactured by Admatechs), Melamine: (Nissan Chemical) PB3600: Epoxidized polybutadiene (manufactured by
  • a photosensitive layer is obtained by uniformly coating the photosensitive resin compositions of Examples 4 to 12 and Comparative Examples 3 to 5 on a 16 ⁇ m-thick polyethylene terephthalate film (G2-16, trade name, manufactured by Teijin Limited) as a support.
  • G2-16 polyethylene terephthalate film
  • the film thickness after drying of the photosensitive layer was 25 ⁇ m.
  • a polyethylene film (NF-15, product name, manufactured by Tamapoly Co., Ltd.) was bonded as a protective film to obtain a photosensitive element.
  • a printed wiring board substrate (E-679, manufactured by Hitachi Chemical Co., Ltd., trade name) in which a 12 ⁇ m thick copper foil was laminated on a glass epoxy substrate was polished with an abrasive brush, washed with water and dried.
  • the press hot plate temperature is 70 ° C.
  • the evacuation time is 20 seconds
  • the lamination press time is 30 seconds
  • the atmospheric pressure is 4 kPa.
  • the protective film of the photosensitive element was peeled and laminated under the condition of a pressure bonding pressure of 0.4 MPa to obtain an evaluation substrate. Each characteristic was evaluated by the method shown below using the obtained test plate. The results are summarized in Table 2.
  • a mask with a via mask opening dimension of 100 ⁇ m is placed on the photosensitive layer of the evaluation substrate, and irradiated with an integrated exposure dose of 200 mJ / cm 2 using a parallel light exposure machine (trade name: EXM-1201, manufactured by Oak Manufacturing Co., Ltd.), 1% Spray development was performed with a sodium carbonate aqueous solution at a pressure of 0.176 MPa (1.8 kgf / cm 2 ) for 60 seconds. Thereafter, the evaluation substrate was visually observed to confirm the presence or absence of the development residue, and evaluated according to the following criteria. A: No development residue. B: Development remains.
  • a pattern of via width / space width 50/50 (unit: ⁇ m) was applied to the photosensitive layer of the evaluation substrate using a parallel light exposure machine (trade name: EXM-1201, manufactured by Oak Manufacturing Co., Ltd.). / Cm 2 to 600 mJ / cm 2 . Thereafter, spray development was performed with a 1% aqueous sodium carbonate solution for 60 seconds at a pressure of 0.176 MPa (1.8 kgf / cm 2 ). The amount of exposure until the 50 ⁇ m via was completely filled was observed and evaluated according to the following criteria. A: 50 ⁇ m vias are not filled between 200 and 600 mJ / cm 2 .
  • a 50 ⁇ m via is not buried between 200 and 400 mJ / cm 2 , but is buried when it exceeds 400 mJ / cm 2 .
  • C Filled when a 50 ⁇ m via exceeds 300 mJ / cm 2 .
  • a pattern of via width / space width 100/100 (unit: ⁇ m) was applied to the photosensitive layer of the evaluation substrate using a direct drawing exposure machine LI-9700 (Dainippon Screen Co., Ltd.) with an integrated exposure amount of 200 mJ / cm 2. Irradiated with. Thereafter, spray development was performed with a 1% aqueous sodium carbonate solution for 60 seconds at a pressure of 0.176 MPa (1.8 kgf / cm 2 ). The via shapes at the center and the end in the same substrate were compared. A: A good via shape is formed at both the center and the end. B: The shape of the via at the center or end is not good.
  • solvent resistance After immersing the test plate in isopropyl alcohol at room temperature for 30 minutes, it was visually confirmed whether or not the appearance of the cured film was abnormal. Then, the peeling test which sticks a cellophane tape on a cured film and pulls up was performed, and it was confirmed whether the cured film peeled from a copper clad laminated board. From these results, solvent resistance was evaluated according to the following criteria. A: There is no abnormality in the appearance of the cured film, and there is no peeling in the peeling test. B: The appearance of the cured film is abnormal or peeled off in the peel test.
  • solder heat resistance After applying the rosin flux to the surface of the cured film of the test plate, it was immersed in a solder bath at 260 ° C. for 10 seconds. After repeating this for 6 cycles, the appearance of the cured film was visually observed, and the solder heat resistance was evaluated according to the following criteria. A: There is no abnormality (peeling or swelling) in the appearance of the cured film, and there is no solder peeling. B: The appearance of the cured film is abnormal (peeling or swelling), or there is solder peeling.
  • a peel test was performed on the test plate by a method according to JIS K5400. That is, 100 1 mm grids were prepared on the cured film of the test plate, and the cellophane tape was attached to the grids, and then peeled off. The peeled state after the peeling was observed, and the adhesion was evaluated according to the following criteria. A: 90/100 or more of the grids were not peeled. B: 50/100 or more and less than 90/100 of the grids were not peeled. C: Less than 50/100 grids were not peeled.
  • SYMBOLS 1 Core base material with build-up layer formed, 2 ... Copper wiring, 3 ... Photosensitive layer, 4 ... Exposure mask, 5 ... Permanent mask resist, 6 ... Electroless Ni gold plating layer, 7 ... Electrolytic gold plating layer.

Abstract

The present invention provides a photosensitive resin composition for a permanent mask resist, the resin composition containing (A) an acid-modified vinyl group-containing epoxy resin, (B) a photopolymerization initiator and (C) a nitroxyl compound. The nitroxyl compound (C) contains a compound having a specific structure.

Description

永久マスクレジスト用感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法Photosensitive resin composition for permanent mask resist, photosensitive element, method for forming resist pattern, and method for producing printed wiring board
 本発明は、永久マスクレジスト用感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法に関する。 The present invention relates to a photosensitive resin composition for permanent mask resist, a photosensitive element, a method for forming a resist pattern, and a method for producing a printed wiring board.
 従来、プリント配線板製造における永久マスクレジストは、熱又は紫外線硬化型のレジストインキをスクリーン印刷する方法で作製されてきた。近年、電子デバイスの高集積化に伴い、プリント配線板において配線パターン及び絶縁パターンの高精細化が必要とされるようになってきた。しかし、従来のスクリーン印刷によるレジスト形成法では、印刷時に滲み、ダレ等が発生するため、高精細なレジスト像を形成することが困難であった。そこで、高精細なレジスト像を形成するために、フォトリソグラフィーによるレジスト像形成法が開発されるに至った。 Conventionally, permanent mask resists in the production of printed wiring boards have been produced by a screen printing method using heat or ultraviolet curable resist ink. In recent years, with the high integration of electronic devices, it has become necessary to increase the definition of wiring patterns and insulating patterns in printed wiring boards. However, in the conventional resist forming method by screen printing, bleeding and sagging occur at the time of printing, and it is difficult to form a high-definition resist image. Therefore, in order to form a high-definition resist image, a resist image forming method by photolithography has been developed.
 フォトリソグラフィーによるレジスト像形成法とは、具体的には、ドライフィルム型の感光性レジストを基材上に熱圧着するか、又は液状の感光性レジストを基材上にカーテン塗布若しくはスプレー塗布し、紫外線等の活性光線をネガマスクを介して照射した後、現像することによりレジスト像の形成を行うものである。 Specifically, the resist image forming method by photolithography is a method in which a dry film type photosensitive resist is thermocompression-bonded on a substrate, or a liquid photosensitive resist is curtain-coated or spray-coated on a substrate, A resist image is formed by irradiating actinic rays such as ultraviolet rays through a negative mask and then developing.
 ところで、レジストパターンの形成方法としては、マスクパターンを用いることなくレジストパターンを直接描画する、いわゆる直接描画露光法が注目されている。この直接描画露光法によれば、高い生産性かつ高い解像度でのレジストパターンの形成が可能であり、また、さまざまな基板の歪みにも対応できる位置精度の向上が可能であると考えられている。さらに、近年、露光波長350~450nmの広い波長域を持つ直接描画露光機が実用的に利用可能になりつつある。 By the way, as a method for forming a resist pattern, a so-called direct drawing exposure method in which a resist pattern is directly drawn without using a mask pattern has attracted attention. According to this direct drawing exposure method, it is considered that a resist pattern can be formed with high productivity and high resolution, and it is possible to improve positional accuracy that can cope with various distortions of the substrate. . Furthermore, in recent years, direct drawing exposure machines having a wide wavelength range of exposure wavelengths of 350 to 450 nm are becoming practically available.
 露光波長405nmのレーザ光を活性光源として用いた直接描画露光法によるレジストパターン形成を意図した感光性樹脂組成物が、これまでにもいくつか提案されている(例えば、特許文献1、2参照)。 Several photosensitive resin compositions intended for resist pattern formation by a direct drawing exposure method using laser light having an exposure wavelength of 405 nm as an active light source have been proposed so far (see, for example, Patent Documents 1 and 2). .
 また、ニトロキシル化合物を用いた感光性樹脂組成物についてはいくつか提案されている(例えば特許文献3~6参照)。 Several photosensitive resin compositions using nitroxyl compounds have been proposed (see, for example, Patent Documents 3 to 6).
特開2002-296764号公報JP 2002-296664 A 特開2004-45596号公報JP 2004-45596 A 特開2003-140329号公報JP 2003-140329 A 特開2003-215790号公報JP 2003-215790 A 特開2006-11397号公報JP 2006-11397 A 特開2007-133398号公報JP 2007-133398 A
 しかしながら、特許文献1及び2に記載された感光性樹脂組成物は、露光波長405nm付近の光に対する感度は良好であるものの、露光波長350~450nmまでの広い波長域を持つ直接描画露光機では、露光量に対する裕度が狭く、サンプル間及び同一基板内で再現性良くレジストパターンを形成することが困難である。また、特許文献3~6に記載された感光性樹脂組成物は、露光波長350~450nmまでの広い波長域を持つ直接描画露光機に対応したものではなく、また永久マスクレジストとしての耐熱性、耐湿熱性、密着性、機械特性、電気特性に優れた高性能な硬化膜も形成するには改善の余地がある。 However, although the photosensitive resin compositions described in Patent Documents 1 and 2 have good sensitivity to light having an exposure wavelength of about 405 nm, in a direct drawing exposure machine having a wide wavelength range from 350 to 450 nm, The tolerance for the exposure amount is narrow, and it is difficult to form a resist pattern with good reproducibility between samples and within the same substrate. Further, the photosensitive resin compositions described in Patent Documents 3 to 6 are not compatible with a direct drawing exposure machine having a wide wavelength range of an exposure wavelength of 350 to 450 nm, and are resistant to heat as a permanent mask resist. There is room for improvement in forming a high-performance cured film excellent in moisture and heat resistance, adhesion, mechanical properties, and electrical properties.
 本発明は、露光量に対する裕度が広く、サンプル間及び同一基板内で再現性良くレジストパターンを形成できる永久マスクレジスト用感光性樹脂組成物、それを用いた感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法を提供することを目的とする。 The present invention relates to a photosensitive resin composition for permanent mask resist, which has a wide tolerance for exposure amount and can form a resist pattern with good reproducibility between samples and within the same substrate, a photosensitive element using the same, and a method for forming a resist pattern And it aims at providing the manufacturing method of a printed wiring board.
 本発明は、(A)酸変性ビニル基含有エポキシ樹脂と、(B)光重合開始剤と、(C)ニトロキシル化合物と、を含有し、(C)ニトロキシル化合物が、下記一般式(1)で表される化合物を含む永久マスクレジスト用感光性樹脂組成物を提供する。 The present invention includes (A) an acid-modified vinyl group-containing epoxy resin, (B) a photopolymerization initiator, and (C) a nitroxyl compound, and (C) the nitroxyl compound is represented by the following general formula (1). There is provided a photosensitive resin composition for a permanent mask resist containing the represented compound.
Figure JPOXMLDOC01-appb-C000006
[式(1)中、Rはヒドロキシ基、炭素数1~5のアルキル基、アセトアミド基、アミノ基、クロロアセトアミド基、シアノ基、ベンゾイルオキシ基又は下記一般式(2)で表される基を示す。]
Figure JPOXMLDOC01-appb-C000007
[式(2)中、n1は1~12の整数を示す。]
Figure JPOXMLDOC01-appb-C000006
[In the formula (1), R 1 is a hydroxy group, an alkyl group having 1 to 5 carbon atoms, an acetamide group, an amino group, a chloroacetamide group, a cyano group, a benzoyloxy group, or a group represented by the following general formula (2) Indicates. ]
Figure JPOXMLDOC01-appb-C000007
[In the formula (2), n1 represents an integer of 1 to 12. ]
 このような感光性樹脂組成物によれば、露光量裕度を広げることができ、サンプル間及び同一基板内で再現性が良く、特にビア形状の再現性が良いレジストパターンを形成することが可能である。また、波長350nm~450nmの範囲内の露光光を用いたレジストパターンの形成及び直接描画露光法によるレジストパターンの形成を十分な感度及び解像度で行うことが可能である。 According to such a photosensitive resin composition, it is possible to widen the exposure tolerance, and it is possible to form a resist pattern with good reproducibility between samples and within the same substrate, particularly with good reproducibility of via shape. It is. In addition, it is possible to perform resist pattern formation using exposure light in the wavelength range of 350 nm to 450 nm and resist pattern formation by a direct drawing exposure method with sufficient sensitivity and resolution.
 さらに、上記構成を有する本発明の感光性樹脂組成物によれば、耐熱性、耐湿熱性、密着性、機械特性及び電気特性に優れた高性能な硬化膜を形成することができ、プリント配線板、高密度多層板及び半導体パッケージ等の製造に好適に用いることができる。 Furthermore, according to the photosensitive resin composition of the present invention having the above-described configuration, a high-performance cured film excellent in heat resistance, heat and humidity resistance, adhesion, mechanical properties, and electrical properties can be formed. It can be suitably used for the production of high-density multilayer boards and semiconductor packages.
 本発明の感光性樹脂組成物は、上記構成により、ソルダーレジストとしての現像性、密着性、耐熱性及び耐溶剤性に優れた特性を保ちながら、波長350nm~450nmの範囲内の露光光を用いたレジストパターンの形成を、より優れた感度及び解像度で行うことが可能となり、特に露光量裕度を向上させることが可能となる。 The photosensitive resin composition of the present invention uses the exposure light in the wavelength range of 350 nm to 450 nm while maintaining excellent properties of developability, adhesion, heat resistance and solvent resistance as a solder resist due to the above configuration. Therefore, the resist pattern can be formed with better sensitivity and resolution, and in particular, the exposure tolerance can be improved.
 上記(A)酸変性ビニル基含有エポキシ樹脂の含有量は、感光性樹脂組成物の固形分全量を基準として、25質量%以上であることが好ましい。 The content of the (A) acid-modified vinyl group-containing epoxy resin is preferably 25% by mass or more based on the total solid content of the photosensitive resin composition.
 上記(A)酸変性ビニル基含有エポキシ樹脂は、下記一般式(3)で表されるノボラック型エポキシ樹脂、下記一般式(4)で表されるビスフェノール型エポキシ樹脂、及び、下記一般式(5)で表されるサリチルアルデヒド型エポキシ樹脂からなる群より選択される少なくとも1種のエポキシ樹脂(a)と、ビニル基含有モノカルボン酸(b)と、を反応させて得られる樹脂であることが好ましい。
Figure JPOXMLDOC01-appb-C000008
[式(3)中、Rは水素原子又はメチル基を示し、Yは水素原子又はグリシジル基(ただし、水素原子/グリシジル基(モル比)は、0/100~30/70)を示し、nは1以上の整数を示す。なお、複数存在するR及びYはそれぞれ同一でも異なっていてもよい。]
Figure JPOXMLDOC01-appb-C000009
[式(4)中、Rは水素原子又はメチル基を示し、Yは水素原子又はグリシジル基(ただし、水素原子/グリシジル基(モル比)は、0/100~30/70)を示し、nは1以上の整数を示す。なお、複数存在するR及びYはそれぞれ同一でも異なっていてもよい。]
Figure JPOXMLDOC01-appb-C000010
[式(5)中、Yは水素原子又はグリシジル基(ただし、水素原子/グリシジル基(モル比)は、0/100~30/70)を示し、nは1以上の整数を示す。なお、複数存在するYはそれぞれ同一でも異なっていてもよい。]
The (A) acid-modified vinyl group-containing epoxy resin includes a novolac type epoxy resin represented by the following general formula (3), a bisphenol type epoxy resin represented by the following general formula (4), and the following general formula (5 A resin obtained by reacting at least one epoxy resin (a) selected from the group consisting of salicylaldehyde-type epoxy resins represented by (1) with a vinyl group-containing monocarboxylic acid (b). preferable.
Figure JPOXMLDOC01-appb-C000008
[In the formula (3), R 6 represents a hydrogen atom or a methyl group, Y 1 represents a hydrogen atom or a glycidyl group (wherein hydrogen atom / glycidyl group (molar ratio) is 0/100 to 30/70). , N 2 represents an integer of 1 or more. A plurality of R 6 and Y 1 may be the same or different. ]
Figure JPOXMLDOC01-appb-C000009
[In the formula (4), R 7 represents a hydrogen atom or a methyl group, and Y 2 represents a hydrogen atom or a glycidyl group (wherein hydrogen atom / glycidyl group (molar ratio) is 0/100 to 30/70). , N 3 represents an integer of 1 or more. A plurality of R 7 and Y 2 may be the same or different. ]
Figure JPOXMLDOC01-appb-C000010
[In Formula (5), Y 3 represents a hydrogen atom or a glycidyl group (wherein hydrogen atom / glycidyl group (molar ratio) is 0/100 to 30/70), and n 4 represents an integer of 1 or more. A plurality of Y 3 may be the same or different. ]
 本発明はまた、支持体上に、上記永久マスクレジスト用感光性樹脂組成物からなる感光層を備える感光性エレメントを提供する。 The present invention also provides a photosensitive element comprising a photosensitive layer made of the above-described photosensitive resin composition for permanent mask resist on a support.
 本発明はまた、上記永久マスクレジスト用感光性樹脂組成物からなる感光層又は上記感光性エレメントの感光層を基板上に積層する積層工程と、上記感光層に活性光線を画像状に照射して露光部を光硬化させる露光工程と、上記露光部以外の領域を除去する現像工程と、を含むレジストパターンの形成方法を提供する。 The present invention also includes a lamination step of laminating a photosensitive layer composed of the photosensitive resin composition for a permanent mask resist or a photosensitive layer of the photosensitive element on a substrate, and irradiating the photosensitive layer with an actinic ray in an image form. Provided is a resist pattern forming method including an exposure step of photocuring an exposed portion and a developing step of removing a region other than the exposed portion.
 本発明はさらに、上記本発明のレジストパターンの形成方法により基板上に永久マスクを形成する、プリント配線板の製造方法を提供する。 The present invention further provides a method for producing a printed wiring board, wherein a permanent mask is formed on a substrate by the method for forming a resist pattern of the present invention.
 上記レジストパターンの形成方法及び上記プリント配線板の製造方法によれば、上記本発明の感光性樹脂組成物を用いているため、現像性、密着性、耐熱性及び耐溶剤性に優れた特性を保ちながら、波長350nm~450nmの範囲内の露光光を用いたレジストパターンの形成を十分な感度及び解像度で行うことが可能である。また、露光量に対する裕度が広く、サンプル間及び同一基板内でビア形状等の再現性の良いレジストパターンを形成できる永久マスク(ソルダーレジスト)等の硬化膜を効率的に形成することができる。 According to the method for forming a resist pattern and the method for producing a printed wiring board, since the photosensitive resin composition of the present invention is used, characteristics excellent in developability, adhesion, heat resistance, and solvent resistance are obtained. The resist pattern can be formed with sufficient sensitivity and resolution using exposure light within a wavelength range of 350 nm to 450 nm while maintaining the same. Further, it is possible to efficiently form a cured film such as a permanent mask (solder resist) that can form a resist pattern with good reproducibility such as a via shape between samples and within the same substrate with a wide tolerance to the exposure amount.
 本発明は、露光量に対する裕度が広く、サンプル間及び同一基板内で再現性良くレジストパターンを形成できる永久マスクレジスト用感光性樹脂組成物、それを用いた感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法を提供することができる。 The present invention relates to a photosensitive resin composition for permanent mask resist, which has a wide tolerance for exposure amount and can form a resist pattern with good reproducibility between samples and within the same substrate, a photosensitive element using the same, and a method for forming a resist pattern And the manufacturing method of a printed wiring board can be provided.
(a)はビルドアップ層形成済みコア基材を示す模式断面図、(b)は感光層の形成工程を示す模式断面図、(c)は露光工程を示す模式断面図、(d)はレジストパターンの形成工程を示す模式断面図、(e)は永久マスクレジストの形成工程を示す模式断面図である。(A) is a schematic cross-sectional view showing a core substrate with a build-up layer formed, (b) is a schematic cross-sectional view showing a photosensitive layer forming step, (c) is a schematic cross-sectional view showing an exposure step, and (d) is a resist. FIG. 5E is a schematic cross-sectional view showing a pattern forming process, and FIG. 5E is a schematic cross-sectional view showing a permanent mask resist forming process. (a)は無電解金Niめっき工程を示す模式断面図、(b)は電解金めっき工程を示す模式断面図である。(A) is a schematic cross section which shows an electroless gold Ni plating process, (b) is a schematic cross section which shows an electrolytic gold plating process.
 以下、場合により図面を参照しつつ本発明の好適な実施形態について詳細に説明する。なお、図面中、同一又は相当部分には同一符号を付し、重複する説明は省略する。また、本発明における(メタ)アクリル酸とはアクリル酸又はメタクリル酸を意味し、(メタ)アクリレート等の他の類似の表現においても同様である。 Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings as the case may be. In the drawings, the same or corresponding parts are denoted by the same reference numerals, and redundant description is omitted. In addition, (meth) acrylic acid in the present invention means acrylic acid or methacrylic acid, and the same applies to other similar expressions such as (meth) acrylate.
 本発明の感光性樹脂組成物は、(A)酸変性ビニル基含有エポキシ樹脂(以下、場合により「(A)成分」という。)と、(B)光重合開始剤(以下、場合により「(B)成分」という。)と、(C)ニトロキシル化合物(以下、場合により「(C)成分」という。)と、を含有するものである。以下、各成分について詳細に説明する。 The photosensitive resin composition of the present invention comprises (A) an acid-modified vinyl group-containing epoxy resin (hereinafter sometimes referred to as “component (A)”) and (B) a photopolymerization initiator (hereinafter sometimes referred to as “( B) component ") and (C) a nitroxyl compound (hereinafter sometimes referred to as" (C) component "). Hereinafter, each component will be described in detail.
 (A)成分は、酸変性ビニル基を含有するエポキシ樹脂であり、例えば、エポキシ樹脂をビニル基含有モノカルボン酸で変性した樹脂を用いることができる。(A)成分としては、下記一般式(3)で表されるノボラック型エポキシ樹脂、下記一般式(4)で表されるビスフェノールA型エポキシ樹脂又はビスフェノールF型エポキシ樹脂、及び、下記一般式(5)で表されるサリチルアルデヒド型エポキシ樹脂からなる群より選択される少なくとも1種のエポキシ樹脂(a)と、ビニル基含有モノカルボン酸(b)と、を反応させて得られる樹脂を用いることが好ましい。
Figure JPOXMLDOC01-appb-C000011
[式(3)中、Rは水素原子又はメチル基を示し、Yは水素原子又はグリシジル基(ただし、水素原子/グリシジル基(モル比)は、0/100~30/70)を示し、nは1以上の整数を示す。なお、複数存在するR及びYはそれぞれ同一でも異なっていてもよい。]
Figure JPOXMLDOC01-appb-C000012
[式(4)中、Rは水素原子又はメチル基を示し、Yは水素原子又はグリシジル基(ただし、水素原子/グリシジル基(モル比)は、0/100~30/70)を示し、nは1以上の整数を示す。なお、複数存在するR及びYはそれぞれ同一でも異なっていてもよい。]
Figure JPOXMLDOC01-appb-C000013
[式(5)中、Yは水素原子又はグリシジル基(ただし、水素原子/グリシジル基(モル比)は、0/100~30/70)を示し、nは1以上の整数を示す。なお、複数存在するYはそれぞれ同一でも異なっていてもよい。]
The component (A) is an epoxy resin containing an acid-modified vinyl group. For example, a resin obtained by modifying an epoxy resin with a vinyl group-containing monocarboxylic acid can be used. As the component (A), a novolac type epoxy resin represented by the following general formula (3), a bisphenol A type epoxy resin or a bisphenol F type epoxy resin represented by the following general formula (4), and the following general formula ( 5) Use of a resin obtained by reacting at least one epoxy resin (a) selected from the group consisting of salicylaldehyde type epoxy resins represented by 5) with a vinyl group-containing monocarboxylic acid (b). Is preferred.
Figure JPOXMLDOC01-appb-C000011
[In the formula (3), R 6 represents a hydrogen atom or a methyl group, Y 1 represents a hydrogen atom or a glycidyl group (wherein hydrogen atom / glycidyl group (molar ratio) is 0/100 to 30/70). , N 2 represents an integer of 1 or more. A plurality of R 6 and Y 1 may be the same or different. ]
Figure JPOXMLDOC01-appb-C000012
[In the formula (4), R 7 represents a hydrogen atom or a methyl group, and Y 2 represents a hydrogen atom or a glycidyl group (wherein hydrogen atom / glycidyl group (molar ratio) is 0/100 to 30/70). , N 3 represents an integer of 1 or more. A plurality of R 7 and Y 2 may be the same or different. ]
Figure JPOXMLDOC01-appb-C000013
[In Formula (5), Y 3 represents a hydrogen atom or a glycidyl group (wherein hydrogen atom / glycidyl group (molar ratio) is 0/100 to 30/70), and n 4 represents an integer of 1 or more. A plurality of Y 3 may be the same or different. ]
 (A)成分は、上記エポキシ樹脂(a)とビニル基含有モノカルボン酸(b)との反応生成物(以下、「反応生成物(A’)」という。)のほかに、反応生成物(A’)に飽和又は不飽和基含有多塩基酸無水物(c)を付加した付加反応生成物も用いられる。ここで、付加反応生成物の合成時には、最初の反応で、エポキシ樹脂(a)のエポキシ基とビニル基含有モノカルボン酸(b)のカルボキシル基との付加反応により水酸基が形成され、次の反応で、生成した水酸基(エポキシ樹脂(a)中に元来ある水酸基も含む)と飽和又は不飽和基含有多塩基酸無水物(c)の酸無水物基とが半エステル反応しているものと推察される。 In addition to the reaction product of the epoxy resin (a) and the vinyl group-containing monocarboxylic acid (b) (hereinafter referred to as “reaction product (A ′)”), the component (A) is a reaction product ( An addition reaction product obtained by adding a saturated or unsaturated group-containing polybasic acid anhydride (c) to A ′) is also used. Here, when the addition reaction product is synthesized, in the first reaction, a hydroxyl group is formed by the addition reaction of the epoxy group of the epoxy resin (a) and the carboxyl group of the vinyl group-containing monocarboxylic acid (b), and the next reaction And the resulting hydroxyl group (including the hydroxyl group originally contained in the epoxy resin (a)) and the acid anhydride group of the saturated or unsaturated group-containing polybasic acid anhydride (c) undergo a half-ester reaction. Inferred.
 上記一般式(3)で表されるノボラック型エポキシ樹脂としては、例えば、フェノールノボラック型エポキシ樹脂及びクレゾールノボラック型エポキシ樹脂が挙げられる。これらのノボラック型エポキシ樹脂は、例えば、それぞれ公知の方法でフェノールノボラック樹脂又はクレゾールノボラック樹脂にエピクロルヒドリンを反応させることで得られる。 Examples of the novolak type epoxy resin represented by the general formula (3) include a phenol novolak type epoxy resin and a cresol novolak type epoxy resin. These novolak-type epoxy resins can be obtained by, for example, reacting a phenol novolak resin or a cresol novolak resin with epichlorohydrin by a known method.
 また、上記一般式(4)で表される化合物において、Yがグリシジル基であるビスフェノールA型エポキシ樹脂又はビスフェノールF型エポキシ樹脂は、例えば、下記一般式(6)で表されるビスフェノールA型エポキシ樹脂又はビスフェノールF型エポキシ樹脂の水酸基と、エピクロルヒドリンとを反応させることにより得ることができる。
Figure JPOXMLDOC01-appb-C000014
[式(6)中、Rは水素原子又はメチル基を示し、nは1以上の整数を示す。なお、複数存在するRはそれぞれ同一でも異なっていてもよい。]
In the compound represented by the general formula (4), the bisphenol A type epoxy resin or bisphenol F type epoxy resin in which Y 2 is a glycidyl group is, for example, a bisphenol A type represented by the following general formula (6). It can be obtained by reacting a hydroxyl group of epoxy resin or bisphenol F type epoxy resin with epichlorohydrin.
Figure JPOXMLDOC01-appb-C000014
[In Formula (6), R 7 represents a hydrogen atom or a methyl group, and n 3 represents an integer of 1 or more. A plurality of R 7 may be the same or different. ]
 水酸基とエピクロルヒドリンとの反応を促進するためには、反応温度50~120℃でアルカリ金属水酸化物存在下、ジメチルホルムアミド、ジメチルアセトアミド、ジメチルスルホキシド等の極性有機溶剤中で反応を行うことが好ましい。反応温度が50℃以上では反応を速めることができ、反応温度が120℃以下であると副反応を抑制することができる。 In order to promote the reaction between the hydroxyl group and epichlorohydrin, the reaction is preferably carried out in a polar organic solvent such as dimethylformamide, dimethylacetamide or dimethylsulfoxide in the presence of an alkali metal hydroxide at a reaction temperature of 50 to 120 ° C. When the reaction temperature is 50 ° C. or higher, the reaction can be accelerated, and when the reaction temperature is 120 ° C. or lower, side reactions can be suppressed.
 上記一般式(5)で表されるサリチルアルデヒド型エポキシ樹脂としては、具体的にはFAE-2500、EPPN-501H、EPPN-502H(以上、日本化薬社製、商品名)等が挙げられる。 Specific examples of the salicylaldehyde type epoxy resin represented by the above general formula (5) include FAE-2500, EPPN-501H, EPPN-502H (the product name, manufactured by Nippon Kayaku Co., Ltd.) and the like.
 また、ビニル基含有モノカルボン酸(b)としては、例えば、アクリル酸、アクリル酸の二量体、メタクリル酸、β-フルフリルアクリル酸、β-スチリルアクリル酸、桂皮酸、クロトン酸及びα-シアノ桂皮酸が挙げられる。また、水酸基含有アクリレートと飽和又は不飽和二塩基酸無水物との反応生成物である半エステル化合物、及びビニル基含有モノグリシジルエーテル又はビニル基含有モノグリシジルエステルと飽和又は不飽和二塩基酸無水物との反応生成物である半エステル化合物が挙げられる。これらビニル基含有モノカルボン酸(b)は、1種を単独で又は2種以上組み合わせて用いることができる。 Examples of the vinyl group-containing monocarboxylic acid (b) include acrylic acid, a dimer of acrylic acid, methacrylic acid, β-furfurylacrylic acid, β-styrylacrylic acid, cinnamic acid, crotonic acid, and α- And cyanocinnamic acid. In addition, a half-ester compound which is a reaction product of a hydroxyl group-containing acrylate and a saturated or unsaturated dibasic acid anhydride, and a vinyl group-containing monoglycidyl ether or vinyl group-containing monoglycidyl ester and a saturated or unsaturated dibasic acid anhydride The half-ester compound which is a reaction product with is mentioned. These vinyl group-containing monocarboxylic acids (b) can be used singly or in combination of two or more.
 ビニル基含有モノカルボン酸(b)の一例である上記半エステル化合物の合成に用いられる水酸基含有アクリレートとしては、例えば、ヒドロキシエチル(メタ)アクリレート、ヒドロキシプロピル(メタ)アクリレート、ヒドロキシブチル(メタ)アクリレート、ポリエチレングリコールモノ(メタ)アクリレート、トリメチロールプロパンジ(メタ)アクリレート、ペンタエリスルトールトリ(メタ)アクリレート及びジペンタエリスリトールペンタ(メタ)アクリレートが挙げられる。ビニル基含有モノグリシジルエステルとしては、グリシジルアクリレート、グリシジルメタクリレート等が挙げられる。 Examples of the hydroxyl group-containing acrylate used in the synthesis of the half ester compound as an example of the vinyl group-containing monocarboxylic acid (b) include hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, and hydroxybutyl (meth) acrylate. , Polyethylene glycol mono (meth) acrylate, trimethylolpropane di (meth) acrylate, pentaerythritol tri (meth) acrylate and dipentaerythritol penta (meth) acrylate. Examples of the vinyl group-containing monoglycidyl ester include glycidyl acrylate and glycidyl methacrylate.
 上記半エステル化合物の合成に用いられる飽和又は不飽和二塩基酸無水物としては、例えば、無水コハク酸、無水マレイン酸、テトラヒドロ無水フタル酸、無水フタル酸、メチルテトラヒドロ無水フタル酸、エチルテトラヒドロ無水フタル酸、ヘキサヒドロ無水フタル酸、メチルヘキサヒドロ無水フタル酸、エチルヘキサヒドロ無水フタル酸及び無水イタコン酸が挙げられる。 Examples of the saturated or unsaturated dibasic acid anhydride used in the synthesis of the half ester compound include succinic anhydride, maleic anhydride, tetrahydrophthalic anhydride, phthalic anhydride, methyltetrahydrophthalic anhydride, and ethyltetrahydrophthalic anhydride. Acids, hexahydrophthalic anhydride, methylhexahydrophthalic anhydride, ethylhexahydrophthalic anhydride and itaconic anhydride.
 エポキシ樹脂(a)とビニル基含有モノカルボン酸(b)との反応において、エポキシ樹脂(a)のエポキシ基1当量に対して、ビニル基含有モノカルボン酸(b)が0.6~1.05当量となる比率で反応させることが好ましく、0.8~1.05当量となる比率で反応させることがより好ましく、0.9~1.0当量となる比率で反応させることが特に好ましい。 In the reaction of the epoxy resin (a) with the vinyl group-containing monocarboxylic acid (b), the vinyl group-containing monocarboxylic acid (b) is 0.6 to 1. The reaction is preferably carried out at a ratio of 05 equivalents, more preferably carried out at a ratio of 0.8 to 1.05 equivalents, particularly preferably carried out at a ratio of 0.9 to 1.0 equivalents.
 エポキシ樹脂(a)とビニル基含有モノカルボン酸(b)とは有機溶剤に溶かして反応させることが好ましい。有機溶剤としては、例えば、エチルメチルケトン、シクロヘキサノン等のケトン類、トルエン、キシレン、テトラメチルベンゼン等の芳香族炭化水素類、メチルセロソルブ、ブチルセロソルブ、メチルカルビトール、ブチルカルビトール、プロピレングリコールモノメチルエーテル、ジプロピレングリコールモノエチルエーテル、ジプロピレングリコールジエチルエーテル、トリエチレングリコールモノエチルエーテル等のグリコールエーテル類、酢酸エチル、酢酸ブチル、ブチルセロソルブアセテート、カルビトールアセテート等のエステル類、オクタン、デカン等の脂肪族炭化水素類及び石油エーテル、石油ナフサ、水添石油ナフサ、ソルベントナフサ等の石油系溶剤が挙げられる。 The epoxy resin (a) and the vinyl group-containing monocarboxylic acid (b) are preferably dissolved and reacted in an organic solvent. Examples of the organic solvent include ketones such as ethyl methyl ketone and cyclohexanone, aromatic hydrocarbons such as toluene, xylene, and tetramethylbenzene, methyl cellosolve, butyl cellosolve, methyl carbitol, butyl carbitol, propylene glycol monomethyl ether, Glycol ethers such as dipropylene glycol monoethyl ether, dipropylene glycol diethyl ether and triethylene glycol monoethyl ether, esters such as ethyl acetate, butyl acetate, butyl cellosolve acetate and carbitol acetate, aliphatic carbonization such as octane and decane Examples include hydrogen and petroleum-based solvents such as petroleum ether, petroleum naphtha, hydrogenated petroleum naphtha, and solvent naphtha.
 さらに、反応を促進させるために触媒を用いることが好ましい。用いられる触媒としては、例えば、トリエチルアミン、ベンジルメチルアミン、メチルトリエチルアンモニウムクロライド、ベンジルトリメチルアンモニウムクロライド、ベンジルトリメチルアンモニウムブロマイド、ベンジルトリメチルメチルアンモニウムアイオダイド及びトリフェニルホスフィンが挙げられる。触媒の使用量は、エポキシ樹脂(a)とビニル基含有モノカルボン酸(b)との合計100質量部に対して、0.1~10質量部であることが好ましい。 Furthermore, it is preferable to use a catalyst to promote the reaction. Examples of the catalyst used include triethylamine, benzylmethylamine, methyltriethylammonium chloride, benzyltrimethylammonium chloride, benzyltrimethylammonium bromide, benzyltrimethylmethylammonium iodide, and triphenylphosphine. The amount of the catalyst used is preferably 0.1 to 10 parts by mass with respect to 100 parts by mass in total of the epoxy resin (a) and the vinyl group-containing monocarboxylic acid (b).
 また、反応中の重合を防止する目的で、重合防止剤を使用することが好ましい。重合禁止剤としては、例えば、ハイドロキノン、メチルハイドロキノン、ハイドロキノンモノメチルエーテル、カテコール及びピロガロールが挙げられる。重合禁止剤の使用量は、エポキシ樹脂(a)とビニル基含有モノカルボン酸(b)との合計100質量部に対して、0.01~1質量部であることが好ましい。また、反応温度は、60~150℃であることが好ましく、80~120℃であることがより好ましい。 It is also preferable to use a polymerization inhibitor for the purpose of preventing polymerization during the reaction. Examples of the polymerization inhibitor include hydroquinone, methyl hydroquinone, hydroquinone monomethyl ether, catechol and pyrogallol. The amount of the polymerization inhibitor used is preferably 0.01 to 1 part by mass with respect to 100 parts by mass in total of the epoxy resin (a) and the vinyl group-containing monocarboxylic acid (b). The reaction temperature is preferably 60 to 150 ° C., more preferably 80 to 120 ° C.
 また、必要に応じて、ビニル基含有モノカルボン酸(b)と、p-ヒドロキシフェネチルアルコール等のフェノール系化合物、無水トリメリット酸、無水ピロメリット酸、ベンゾフェノンテトラカルボン酸無水物、ビフェニルテトラカルボン酸無水物等の多塩基酸無水物とを併用することができる。 If necessary, a vinyl group-containing monocarboxylic acid (b) and a phenolic compound such as p-hydroxyphenethyl alcohol, trimellitic anhydride, pyromellitic anhydride, benzophenonetetracarboxylic anhydride, biphenyltetracarboxylic acid A polybasic acid anhydride such as an anhydride can be used in combination.
 また、(A)酸変性ビニル基含有エポキシ樹脂としては、露光量に対する裕度が広く、サンプル間及び同一基板内でビア形状等の再現性の良いレジストパターンを形成する点では、上述の反応生成物(A’)に飽和又は不飽和基含有多塩基酸無水物(c)を反応させて得られる樹脂を用いることが好ましい。 In addition, (A) the acid-modified vinyl group-containing epoxy resin has a wide tolerance with respect to the exposure amount, and the above-mentioned reaction product is formed in that a resist pattern with good reproducibility such as a via shape is formed between samples and within the same substrate. It is preferable to use a resin obtained by reacting the product (A ′) with a saturated or unsaturated group-containing polybasic acid anhydride (c).
 飽和又は不飽和基含有多塩基酸無水物(c)としては、上記半エステル化合物の合成に用いられる飽和又は不飽和二塩基酸無水物として例示した化合物等が挙げられる。 Examples of the saturated or unsaturated group-containing polybasic acid anhydride (c) include compounds exemplified as the saturated or unsaturated dibasic acid anhydride used in the synthesis of the half ester compound.
 反応生成物(A’)と飽和又は不飽和基含有多塩基酸無水物(c)との反応において、反応生成物(A’)中の水酸基1当量に対して、飽和又は不飽和基含有多塩基酸無水物(c)を0.1~1.0当量反応させることで、酸変性ビニル基含有エポキシ樹脂(A)の酸価を調整することができる。 In the reaction of the reaction product (A ′) with the saturated or unsaturated group-containing polybasic acid anhydride (c), the saturated or unsaturated group-containing polyhydric acid is used with respect to 1 equivalent of the hydroxyl group in the reaction product (A ′). By reacting 0.1 to 1.0 equivalent of the basic acid anhydride (c), the acid value of the acid-modified vinyl group-containing epoxy resin (A) can be adjusted.
 (A)成分としては、2つ以上の水酸基及びビニル基を有するエポキシアクリレート化合物と、ジイソシアネート化合物と、カルボキシル基を有するジオール化合物と、を反応させて得られるポリウレタン化合物を用いてもよい。このようなポリウレタン化合物は、例えば、UXE-3011、UXE-3012、UXE-3024(以上、日本化薬社製、商品名)等として商業的に入手可能である。 As the component (A), a polyurethane compound obtained by reacting an epoxy acrylate compound having two or more hydroxyl groups and a vinyl group, a diisocyanate compound, and a diol compound having a carboxyl group may be used. Such polyurethane compounds are commercially available, for example, as UXE-3011, UXE-3012, UXE-3024 (above, Nippon Kayaku Co., Ltd., trade name).
 (A)酸変性ビニル基含有エポキシ樹脂の酸価は30~150mgKOH/gであることが好ましく、50~120mgKOH/gであることがより好ましく、60~100mgKOH/gであることが更に好ましい。酸価が30mgKOH/g以上であると感光性樹脂組成物の希アルカリ溶液への溶解性が向上する傾向があり、150mgKOH/g以下であると得られる硬化膜の電気特性が向上する傾向がある。(A)成分の酸価は、次のようにして測定することができる。すなわち、まず、酸価を測定すべき樹脂1gを精秤した後、この樹脂にアセトンを30g添加し、これを均一に溶解する。なお、樹脂に合成溶媒、希釈溶媒等の揮発分が含まれる場合は、予め、揮発分の沸点よりも10℃程度高い温度で1~4時間加熱し、揮発分を除去しておく。次いで、指示薬であるフェノールフタレインをその溶液に適量添加して、0.1Nの水酸化カリウム(KOH)水溶液を用いて滴定を行う。測定対象である樹脂のアセトン溶液を中和するのに必要なKOHのmg数を算出することで、酸価を求める。樹脂を合成溶媒、希釈溶媒等と混合した溶液を測定対象とする場合には、次式により酸価を算出する。
酸価=0.1×Vf×56.1/(Wp×I/100)
式中、VfはKOHの滴定量(mL)を示し、Wpは測定した樹脂を含有する溶液の重量(g)を示し、Iは測定した樹脂を含有する溶液中の不揮発分の割合(質量%)を示す。
(A) The acid value of the acid-modified vinyl group-containing epoxy resin is preferably 30 to 150 mgKOH / g, more preferably 50 to 120 mgKOH / g, and still more preferably 60 to 100 mgKOH / g. When the acid value is 30 mgKOH / g or more, the solubility of the photosensitive resin composition in a dilute alkali solution tends to be improved, and when it is 150 mgKOH / g or less, the electric characteristics of the obtained cured film tend to be improved. . The acid value of the component (A) can be measured as follows. That is, first, 1 g of a resin whose acid value is to be measured is precisely weighed, and then 30 g of acetone is added to this resin to dissolve it uniformly. When the resin contains a volatile component such as a synthetic solvent or a dilution solvent, the resin is heated in advance at a temperature about 10 ° C. higher than the boiling point of the volatile component for 1 to 4 hours to remove the volatile component. Next, an appropriate amount of phenolphthalein as an indicator is added to the solution, and titration is performed using a 0.1N potassium hydroxide (KOH) aqueous solution. The acid value is determined by calculating the number of mg of KOH required to neutralize the acetone solution of the resin to be measured. When a solution in which a resin is mixed with a synthetic solvent, a diluting solvent, or the like is a measurement target, the acid value is calculated by the following formula.
Acid value = 0.1 × Vf × 56.1 / (Wp × I / 100)
In the formula, Vf represents the titration amount (mL) of KOH, Wp represents the weight (g) of the solution containing the measured resin, and I represents the non-volatile content (mass%) in the solution containing the measured resin. ).
 反応生成物(A’)と飽和又は不飽和基含有多塩基酸無水物(c)との反応温度は、60~120℃とすることが好ましい。 The reaction temperature between the reaction product (A ′) and the saturated or unsaturated group-containing polybasic acid anhydride (c) is preferably 60 to 120 ° C.
 また、必要に応じて、エポキシ樹脂(a)として、例えば、水添ビスフェノールA型エポキシ樹脂を一部併用することもできる。さらに、(A)酸変性ビニル基含有エポキシ樹脂に加えて、スチレン-無水マレイン酸共重合体のヒドロキシエチル(メタ)アクリレート変性物又はスチレン-無水マレイン酸共重合体のヒドロキシエチル(メタ)アクリレート変性物等のスチレン-マレイン酸系樹脂を一部併用することもできる。 Further, as necessary, as the epoxy resin (a), for example, a hydrogenated bisphenol A type epoxy resin can be partially used together. Furthermore, in addition to (A) acid-modified vinyl group-containing epoxy resin, styrene-maleic anhydride copolymer modified with hydroxyethyl (meth) acrylate or styrene-maleic anhydride copolymer modified with hydroxyethyl (meth) acrylate Some styrene-maleic acid resins such as products can be used in combination.
 感光性樹脂組成物において、(A)成分の含有量は、感光性樹脂組成物の固形分全量を基準として、25~70質量%であることが好ましく、30~70質量%であることがより好ましく、35~65質量%であることが更に好ましい。この含有量が上記範囲内であると、耐熱性、電気特性及び耐薬品性により優れた塗膜を得ることができる傾向がある。 In the photosensitive resin composition, the content of the component (A) is preferably 25 to 70% by mass, more preferably 30 to 70% by mass, based on the total solid content of the photosensitive resin composition. Preferably, the content is 35 to 65% by mass. When this content is within the above range, a coating film that is more excellent in heat resistance, electrical properties, and chemical resistance tends to be obtained.
 (B)成分としては、例えば、ベンゾイン、ベンゾインメチルエーテル、ベンゾインイソプロピルエーテル等のベンゾイン化合物;ベンゾフェノン、メチルベンゾフェノン、4,4’-ジクロロベンゾフェノン、4,4’-ビス(ジエチルアミノ)ベンゾフェノン、ミヒラーズケトン、4-ベンゾイル-4’-メチルジフェニルサルファイド等のベンゾフェノン化合物;アセトフェノン、2,2-ジメトキシ-2-フェニルアセトフェノン、2,2-ジエトキシ-2-フェニルアセトフェノン、1,1-ジクロロアセトフェノン、1-ヒドロキシシクロヘキシルフェニルケトン、2-メチル-1-(4-メチルチオフェニル)-2-モルフォリノプロパン-1-オン、2-ベンジル-2-ジメチルアミノ-1-(4-モルフォリノフェニル)-ブタノン-1、(2,2-ジエトキシアセトフェノン、N,N-ジメチルアミノアセトフェノン等のアセトフェノン化合物;2-メチルアントラキノン、2-エチルアントラキノン、2-tert-ブチルアントラキノン、1-クロロアントラキノン、2-アミルアントラキノン、2-アミノアントラキノン等のアントラキノン化合物;2,4-ジメチルチオキサントン、2,4-ジエチルチオキサントン、2-クロロチオキサントン、2,4-ジイソプロピルチオキサントン等のチオキサントン化合物;アセトフェノンジメチルケタール、ベンジルジメチルケタール等のケタール化合物;2-(o-クロロフェニル)-4,5-ジフェニルイミダゾール二量体、2-(o-クロロフェニル)-4,5-ジ(m-メトキシフェニル)イミダゾール二量体等の2,4,5-トリアリールイミダゾール二量体;9-フェニルアクリジン、1,7-ビス(9,9’-アクリジニル)ヘプタン等のアクリジン誘導体;2,4,6-トリメチルベンゾイルジフェニルホスフィンオキサイド、ビス(2,4,6-トリメチルベンゾイル)-フェニルホスフィンオキサイド等のホスフィンオキサイド化合物及び1,2-オクタンジオン,1-[4-(フェニルチオ)-,2-(O-ベンゾイルオキシム)]、エタノン,1-[9-エチル-6-(2-メチルベンゾイル)-9H-カルバゾール-3-イル]-,1-(O-アセチルオキシム)等のオキシム化合物;ジブトキシアントラセン等のアントラセン化合物が挙げられる。これらは1種を単独で又は2種以上を組み合わせて使用することができる。これらの中でもチオキサントン化合物又はアントラセン化合物を含有することが好ましい。 Examples of the component (B) include benzoin compounds such as benzoin, benzoin methyl ether, and benzoin isopropyl ether; benzophenone, methylbenzophenone, 4,4′-dichlorobenzophenone, 4,4′-bis (diethylamino) benzophenone, Michler's ketone, 4 -Benzophenone compounds such as benzoyl-4'-methyldiphenyl sulfide; acetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxy-2-phenylacetophenone, 1,1-dichloroacetophenone, 1-hydroxycyclohexylphenyl Ketone, 2-methyl-1- (4-methylthiophenyl) -2-morpholinopropan-1-one, 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -Acetophenone compounds such as butanone-1, (2,2-diethoxyacetophenone, N, N-dimethylaminoacetophenone; 2-methylanthraquinone, 2-ethylanthraquinone, 2-tert-butylanthraquinone, 1-chloroanthraquinone, 2- Anthraquinone compounds such as amylanthraquinone and 2-aminoanthraquinone; Thioxanthone compounds such as 2,4-dimethylthioxanthone, 2,4-diethylthioxanthone, 2-chlorothioxanthone and 2,4-diisopropylthioxanthone; Acetophenone dimethyl ketal, benzyldimethyl ketal, etc. 2- (o-chlorophenyl) -4,5-diphenylimidazole dimer, 2- (o-chlorophenyl) -4,5-di (m-methoxyphenyl) imi 2,4,5-triarylimidazole dimer such as sol dimer; acridine derivative such as 9-phenylacridine, 1,7-bis (9,9′-acridinyl) heptane; 2,4,6-trimethyl Phosphine oxide compounds such as benzoyldiphenylphosphine oxide and bis (2,4,6-trimethylbenzoyl) -phenylphosphine oxide, and 1,2-octanedione, 1- [4- (phenylthio)-, 2- (O-benzoyloxime) )], Ethanone, oxime compounds such as 1- [9-ethyl-6- (2-methylbenzoyl) -9H-carbazol-3-yl]-, 1- (O-acetyloxime); anthracene such as dibutoxyanthracene These may be used alone or in combination of two or more. it can. Among these, it is preferable to contain a thioxanthone compound or an anthracene compound.
 感光性樹脂組成物において、(B)成分の含有量は、(A)成分の総量100質量部を基準として、0.5~30質量部であることが好ましく、0.5~20質量部であることがより好ましく、0.5~15質量部であることが特に好ましい。この含有量が0.5質量部以上では光感度が向上する傾向があり、30質量部以下であると硬化膜の耐熱性が向上する傾向がある。 In the photosensitive resin composition, the content of the component (B) is preferably 0.5 to 30 parts by mass, based on 100 parts by mass of the total amount of the component (A), preferably 0.5 to 20 parts by mass. More preferred is 0.5 to 15 parts by mass. If this content is 0.5 parts by mass or more, the photosensitivity tends to be improved, and if it is 30 parts by mass or less, the heat resistance of the cured film tends to be improved.
 また、(C)成分であるニトロキシル化合物とは、下記構造式で表されるニトロキシル基を有する化合物である。
Figure JPOXMLDOC01-appb-C000015
Moreover, the nitroxyl compound which is (C) component is a compound which has a nitroxyl group represented by the following structural formula.
Figure JPOXMLDOC01-appb-C000015
 (C)成分は、下記一般式(1)で表わされる化合物を含む。
Figure JPOXMLDOC01-appb-C000016
[式(1)中、Rはヒドロキシ基、炭素数1~5のアルキル基、アセトアミド基、アミノ基、クロロアセトアミド基、シアノ基、ベンゾイルオキシ基又は下記一般式(2)で表される基を示す。]
Figure JPOXMLDOC01-appb-C000017
[式(2)中、n1は1~12の整数を示す。]
(C) A component contains the compound represented by following General formula (1).
Figure JPOXMLDOC01-appb-C000016
[In the formula (1), R 1 is a hydroxy group, an alkyl group having 1 to 5 carbon atoms, an acetamide group, an amino group, a chloroacetamide group, a cyano group, a benzoyloxy group, or a group represented by the following general formula (2) Indicates. ]
Figure JPOXMLDOC01-appb-C000017
[In the formula (2), n1 represents an integer of 1 to 12. ]
 式(1)の化合物において、Rとしては、ヒドロキシ基、アセトアミド基又はベンゾイルオキシ基が好ましい。 In the compound of the formula (1), R 1 is preferably a hydroxy group, an acetamido group or a benzoyloxy group.
 式(1)で表される化合物としては、例えば、4-ヒドロキシ-2,2,6,6-テトラメチルピペリジン-1-オキシルフリーラジカル,4-ヒドロキシ-2,2,6,6-テトラメチルピペリジン-1-オキシルベンゾエートフリーラジカル,4-アセトアミド-2,2,6,6-テトラメチルピペリジン-1-オキシルフリーラジカル、4-アミノ-2,2,6,6-テトラメチルピペリジン-1-オキシルフリーラジカル、4-(2-クロロアセトアミド)-2,2,6,6-テトラメチルピペリジン-1-オキシルフリーラジカル、4-シアノ-2,2,6,6-テトラメチルピペリジン-1-オキシルフリーラジカル及び4-メトキシ-2,2,6,6-テトラメチルピペリジン-1-オキシルフリーラジカルが挙げられる。 Examples of the compound represented by the formula (1) include 4-hydroxy-2,2,6,6-tetramethylpiperidine-1-oxyl free radical, 4-hydroxy-2,2,6,6-tetramethyl. Piperidine-1-oxylbenzoate free radical, 4-acetamido-2,2,6,6-tetramethylpiperidine-1-oxyl free radical, 4-amino-2,2,6,6-tetramethylpiperidine-1-oxyl Free radical, 4- (2-chloroacetamido) -2,2,6,6-tetramethylpiperidine-1-oxyl free radical, 4-cyano-2,2,6,6-tetramethylpiperidine-1-oxyl free Examples include radicals and 4-methoxy-2,2,6,6-tetramethylpiperidine-1-oxyl free radical.
 その他の(C)成分としては、例えば、2,2,6,6-テトラメチルピペリジン-1-オキシルフリーラジカルが挙げられる。これらの化合物は、一般式(1)で表される化合物と併用することができるが、揮発性が高いため単独使用することは困難である。 Other examples of the component (C) include 2,2,6,6-tetramethylpiperidine-1-oxyl free radical. These compounds can be used in combination with the compound represented by the general formula (1), but are difficult to use alone because of their high volatility.
 感光性樹脂組成物において、(C)成分の含有量は、(A)成分の総量100質量部を基準として、0.005~10質量部であることが好ましく、0.01~8質量部であることがより好ましく、0.01~5質量部であることが更に好ましい。この含有量が0.005質量部以上であると効果をより確実に得ることができ、10質量部以下であると感度が向上する傾向がある。 In the photosensitive resin composition, the content of the component (C) is preferably 0.005 to 10 parts by mass, and 0.01 to 8 parts by mass based on 100 parts by mass of the total amount of the component (A). More preferred is 0.01 to 5 parts by mass. When the content is 0.005 parts by mass or more, the effect can be obtained more reliably, and when the content is 10 parts by mass or less, the sensitivity tends to be improved.
 感光性樹脂組成物は、耐溶剤性をより向上できる観点から、(D)エポキシ樹脂(以下、場合により「(D)成分」という。)を含有することが好ましい。(D)エポキシ樹脂としては、ビスフェノールAジグリシジルエーテル等のビスフェノールA型エポキシ樹脂、ビスフェノールFジグリシジルエーテル等のビスフェノールF型エポキシ樹脂、ビスフェノールSジグリシジルエーテル等のビスフェノールS型エポキシ樹脂、ビフェノールジグリシジルエーテル等のビフェノール型エポキシ樹脂、ビキシレノールジグリシジルエーテル等のビキシレノール型エポキシ樹脂、水添ビスフェノールAグリシジルエーテル等の水添ビスフェノールA型エポキシ樹脂、これらの二塩基酸変性ジグリシジルエーテル型エポキシ樹脂、ビフェニルアラルキル型エポキシ樹脂、トリス(2,3-エポキシプロピル)イソシアヌレ-トなどが挙げられる。これらは単独で又は2種以上を組み合わせて使用される。なお、(D)成分は、(A)成分とは異なるものである。 The photosensitive resin composition preferably contains (D) an epoxy resin (hereinafter sometimes referred to as “component (D)”) from the viewpoint of further improving the solvent resistance. (D) Epoxy resins include bisphenol A type epoxy resins such as bisphenol A diglycidyl ether, bisphenol F type epoxy resins such as bisphenol F diglycidyl ether, bisphenol S type epoxy resins such as bisphenol S diglycidyl ether, and biphenol diglycidyl. Biphenol type epoxy resins such as ether, bixylenol type epoxy resins such as bixylenol diglycidyl ether, hydrogenated bisphenol A type epoxy resins such as hydrogenated bisphenol A glycidyl ether, and these dibasic acid-modified diglycidyl ether type epoxy resins, Biphenyl aralkyl type epoxy resin, tris (2,3-epoxypropyl) isocyanurate and the like can be mentioned. These are used alone or in combination of two or more. The component (D) is different from the component (A).
 これらの化合物としては市販のものを用いることができる。例えば、ビスフェノールAジグリシジルエーテルとしてはエピコート828、エピコート1001及びエピコート1002(いずれもジャパンエポキシレジン社製)等を挙げることができる。ビスフェノールFジグリシジルエーテルとしてはエピコート807(ジャパンエポキシレジン社製)、YSLV-80(新日鉄化学社製)等を挙げることができ、ビスフェノールSジグリシジルエーテルとしてはEBPS-200(日本化薬社製)及びエピクロンEXA-1514(大日本インキ化学工業社製)等を挙げることができる。 Commercially available compounds can be used as these compounds. For example, examples of bisphenol A diglycidyl ether include Epicoat 828, Epicoat 1001, Epicoat 1002 (all manufactured by Japan Epoxy Resin Co., Ltd.), and the like. Examples of bisphenol F diglycidyl ether include Epicoat 807 (manufactured by Japan Epoxy Resin Co., Ltd.) and YSLV-80 (manufactured by Nippon Steel Chemical Co., Ltd.). Examples of bisphenol S diglycidyl ether include EBPS-200 (manufactured by Nippon Kayaku Co., Ltd.). And Epicron EXA-1514 (manufactured by Dainippon Ink & Chemicals, Inc.).
 また、ビフェノールジグリシジルエーテルとしてはYL6121(ジャパンエポキシレジン社製)等を挙げることができ、ビキシレノールジグリシジルエーテルとしてはYX4000H(ジャパンエポキシレジン社製)等を挙げることができる。さらに、水添ビスフェノールAグリシジルエーテルとしてはST-2004及びST-2007(いずれも東都化成社製)等を挙げることができる。 In addition, examples of biphenol diglycidyl ether include YL6121 (manufactured by Japan Epoxy Resin Co., Ltd.), and examples of bixylenol diglycidyl ether include YX4000H (manufactured by Japan Epoxy Resin Co., Ltd.). Further, examples of the hydrogenated bisphenol A glycidyl ether include ST-2004 and ST-2007 (both manufactured by Tohto Kasei Co., Ltd.).
 フェノールビフェニルアラルキル型エポキシ樹脂としてはNC-3000H(日本化薬社製)を挙げることができる。これらは、単独で又は2種類以上で使用される。 Examples of the phenol biphenyl aralkyl type epoxy resin include NC-3000H (manufactured by Nippon Kayaku Co., Ltd.). These may be used alone or in combination of two or more.
 上記の中でも、耐クラック性の点では、ビスフェノールF型エポキシ樹脂、フェノールビフェニルアラルキル型エポキシ樹脂又はビスフェノールノボラック型エポキシ樹脂を含有することが好ましい。上記ビスフェノールF型エポキシ樹脂としては、YSLV-80(新日鉄化学社製)等を挙げることができる。また、フェノールビフェニルアラルキル型エポキシ樹脂としては、NC-3000H(日本化薬社製)等を挙げることができる。さらに、ビスフェノールノボラック型エポキシ樹脂としては、EXA-7372(ビスフェノールF型ノボラック型エポキシ樹脂、DIC社製)、157S70(ビスフェノールA型ノボラック型多官能エポキシ樹脂、三菱化学社製)として入手可能である。これらは、単独で又は2種類以上で使用される。 Among the above, in terms of crack resistance, it is preferable to contain a bisphenol F type epoxy resin, a phenol biphenyl aralkyl type epoxy resin, or a bisphenol novolac type epoxy resin. Examples of the bisphenol F type epoxy resin include YSLV-80 (manufactured by Nippon Steel Chemical Co., Ltd.). Examples of the phenol biphenyl aralkyl type epoxy resin include NC-3000H (manufactured by Nippon Kayaku Co., Ltd.). Further, the bisphenol novolac type epoxy resin is available as EXA-7372 (bisphenol F type novolac type epoxy resin, manufactured by DIC), 157S70 (bisphenol A type novolak type polyfunctional epoxy resin, manufactured by Mitsubishi Chemical Corporation). These may be used alone or in combination of two or more.
 (D)成分を用いる場合、その含有量は、(A)成分100質量部に対して、1質量部~50質量部であることが好ましく、5質量部~50質量部であることがより好ましく、10質量部~50質量部であることが更に好ましく、20質量部~40質量部であることが特に好ましい。 When the component (D) is used, the content thereof is preferably 1 part by mass to 50 parts by mass, and more preferably 5 parts by mass to 50 parts by mass with respect to 100 parts by mass of the component (A). The amount is more preferably 10 to 50 parts by weight, and particularly preferably 20 to 40 parts by weight.
 感光性樹脂組成物には、更に希釈剤を含有させることが好ましい。希釈剤としては、例えば、有機溶剤及び/又は光重合性モノマーが使用できる。有機溶剤としては、例えば、エチルメチルケトン、シクロヘキサノン等のケトン類;トルエン、キシレン、テトラメチルベンゼン等の芳香族炭化水素類;メチルセロソルブ、ブチルセロソルブ、メチルカルビトール、ブチルカルビトール、プロピレングリコールモノメチルエーテル、ジプロピレングリコールモノエチルエーテル、ジプロピレングリコールジエチルエーテル、トリエチレングリコールモノエチルエーテル等のグリコールエーテル類;酢酸エチル、酢酸ブチル、ブチルセロソルブアセテート、カルビトールアセテート等のエステル類;オクタン、デカン等の脂肪族炭化水素類及び石油エーテル、石油ナフサ、水添石油ナフサ、ソルベントナフサ等の石油系溶剤が挙げられる。 It is preferable that the photosensitive resin composition further contains a diluent. As the diluent, for example, an organic solvent and / or a photopolymerizable monomer can be used. Examples of the organic solvent include ketones such as ethyl methyl ketone and cyclohexanone; aromatic hydrocarbons such as toluene, xylene and tetramethylbenzene; methyl cellosolve, butyl cellosolve, methyl carbitol, butyl carbitol, propylene glycol monomethyl ether, Glycol ethers such as dipropylene glycol monoethyl ether, dipropylene glycol diethyl ether and triethylene glycol monoethyl ether; esters such as ethyl acetate, butyl acetate, butyl cellosolve acetate and carbitol acetate; aliphatic carbonization such as octane and decane Examples include hydrogen and petroleum-based solvents such as petroleum ether, petroleum naphtha, hydrogenated petroleum naphtha, and solvent naphtha.
 また、光重合性モノマーとしては、例えば、2-ヒドロキシエチル(メタ)アクリレート、2-ヒドロキシプロピル(メタ)アクリレート等のヒドロキシアルキル(メタ)アクリレート類;エチレングリコール、メトキシテトラエチレングリコール、ポリエチレングリコール等のグリコールのモノ又はジ(メタ)アクリレート類;N,N-ジメチル(メタ)アクリルアミド、N-メチロール(メタ)アクリルアミド等の(メタ)アクリルアミド類;N,N-ジメチルアミノエチル(メタ)アクリレート等のアミノアルキル(メタ)アクリレート類;ヘキサンジオール、トリメチロールプロパン、ペンタエリスリトール、ジトリメチロールプロパン、ジペンタエリスリトール、トリス-ヒドロキシエチルイソシアヌレート等の多価アルコール又はこれらのエチレンオキサイド若しくはプロピレンオキサイド付加物と(メタ)アクリル酸との多価(メタ)アクリレート類;フェノキシエチル(メタ)アクリレート、ビスフェノールAのポリエトキシジ(メタ)アクリレート等のフェノール類のエチレンオキサイド又はプロピレンオキサイド付加物の(メタ)アクリレート類;グリセリンジグリシジルエーテル、トリメチロールプロパントリグリシジルエーテル、トリグリシジルイソシアヌレート等のグリシジルエーテルの(メタ)アクリレート類及びメラミン(メタ)アクリレートを挙げることができる。 Examples of the photopolymerizable monomer include hydroxyalkyl (meth) acrylates such as 2-hydroxyethyl (meth) acrylate and 2-hydroxypropyl (meth) acrylate; ethylene glycol, methoxytetraethylene glycol, polyethylene glycol and the like. Mono- or di (meth) acrylates of glycol; (meth) acrylamides such as N, N-dimethyl (meth) acrylamide and N-methylol (meth) acrylamide; amino such as N, N-dimethylaminoethyl (meth) acrylate Alkyl (meth) acrylates; polyhydric alcohols such as hexanediol, trimethylolpropane, pentaerythritol, ditrimethylolpropane, dipentaerythritol, tris-hydroxyethyl isocyanurate Are polyvalent (meth) acrylates of these ethylene oxide or propylene oxide adducts and (meth) acrylic acid; ethylene oxide or propylene of phenols such as phenoxyethyl (meth) acrylate and polyethoxydi (meth) acrylate of bisphenol A (Meth) acrylates of oxide adducts; (meth) acrylates of glycidyl ethers such as glycerin diglycidyl ether, trimethylolpropane triglycidyl ether, triglycidyl isocyanurate, and melamine (meth) acrylate.
 これらの希釈剤は、1種を単独で又は2種以上を組み合わせて用いられる。また、有機溶剤の含有量は、感光性樹脂組成物の粘度を調整する目的で適宜調整可能である。 These diluents are used singly or in combination of two or more. Moreover, content of the organic solvent can be suitably adjusted for the purpose of adjusting the viscosity of the photosensitive resin composition.
 また、希釈剤を用いる場合、その含有量は、(A)成分の総量100質量部を基準として、0.5~40質量部であることが好ましく、1~30質量部であることがより好ましい。この含有量が0.5質量部以上であると、光感度が向上し露光部が現像中に溶出することを抑制できる傾向があり、40質量部以下であると硬化膜の耐熱性が向上する傾向がある。 When a diluent is used, the content thereof is preferably 0.5 to 40 parts by weight, more preferably 1 to 30 parts by weight, based on 100 parts by weight of the total amount of component (A). . If the content is 0.5 parts by mass or more, the photosensitivity is improved and the exposed part tends to be prevented from being eluted during development, and if it is 40 parts by mass or less, the heat resistance of the cured film is improved. Tend.
 また、耐熱性を更に向上できる観点から、本実施形態に係る感光性樹脂組成物には、硬化剤を含有させることができる。 Also, from the viewpoint of further improving the heat resistance, the photosensitive resin composition according to the present embodiment can contain a curing agent.
 硬化剤としては、それ自体が熱、紫外線等で硬化する化合物、又は感光性樹脂組成物中の光硬化性樹脂成分である(A)成分中のカルボキシル基又は水酸基と熱、紫外線等で反応して硬化する化合物が好ましい。硬化剤を用いることで、最終的に得られる硬化膜の耐熱性、密着性、耐薬品性等を向上させることができる。 As the curing agent, it reacts with heat, ultraviolet rays, etc., with a compound that cures itself by heat, ultraviolet rays, or the carboxyl group or hydroxyl group in component (A) which is a photocurable resin component in the photosensitive resin composition. A compound that cures by heating is preferred. By using a curing agent, the heat resistance, adhesion, chemical resistance, and the like of the finally obtained cured film can be improved.
 硬化剤としては、例えば、熱硬化性化合物として、エポキシ化合物、メラミン化合物、尿素化合物、オキサゾリン化合物及びブロック型イソシアネート化合物を挙げることができる。エポキシ化合物としては、例えば、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、水添ビスフェノールA型エポキシ樹脂、臭素化ビスフェノールA型エポキシ樹脂、ノボラック型エポキシ樹脂、ビスフェノールS型エポキシ樹脂、ビフェニル型エポキシ樹脂、トリグリシジルイソシアヌレート等の複素環式エポキシ樹脂及びビキシレノール型エポキシ樹脂が挙げられる。メラミン化合物としては、例えば、トリアミノトリアジン、ヘキサメトキシメラミン及びヘキサブトキシ化メラミンが挙げられる。尿素化合物としては、ジメチロール尿素等が挙げられる。これらの硬化剤は、1種を単独で又は2種以上を組み合わせて用いられる。 Examples of the curing agent include an epoxy compound, a melamine compound, a urea compound, an oxazoline compound, and a block isocyanate compound as a thermosetting compound. Examples of the epoxy compound include bisphenol A type epoxy resin, bisphenol F type epoxy resin, hydrogenated bisphenol A type epoxy resin, brominated bisphenol A type epoxy resin, novolac type epoxy resin, bisphenol S type epoxy resin, and biphenyl type epoxy resin. And heterocyclic epoxy resins such as triglycidyl isocyanurate and bixylenol type epoxy resins. Examples of the melamine compound include triaminotriazine, hexamethoxymelamine, and hexabutoxylated melamine. Examples of the urea compound include dimethylol urea. These hardening | curing agents are used individually by 1 type or in combination of 2 or more types.
 感光性樹脂組成物において、硬化剤を用いる場合、その含有量は、(A)成分の総量100質量部を基準として1~60質量部であることが好ましく、5~50質量部であることがより好ましい。この含有量が1質量部以上であると、最終硬化塗膜の耐熱性が向上する傾向があり、60質量部以下であると現像性が向上する傾向がある。 In the photosensitive resin composition, when a curing agent is used, the content thereof is preferably 1 to 60 parts by mass based on 100 parts by mass of the total amount of component (A), and preferably 5 to 50 parts by mass. More preferred. When this content is 1 part by mass or more, the heat resistance of the final cured coating film tends to be improved, and when it is 60 parts by mass or less, the developability tends to improve.
 本実施形態に係る感光性樹脂組成物には、硬化膜の耐熱性、密着性、耐薬品性等の諸特性を更に向上させる目的で、エポキシ樹脂硬化剤を含有させることが好ましい。 The photosensitive resin composition according to this embodiment preferably contains an epoxy resin curing agent for the purpose of further improving various properties such as heat resistance, adhesion, and chemical resistance of the cured film.
 このようなエポキシ樹脂硬化剤の具体例としては、例えば、2-メチルイミダゾール、2-エチル-4-メチルイミダゾール、1-ベンジル-2-メチルイミダゾール、2-フェニルイミダゾール、2-フェニル-4-メチル-5-ヒドロキシメチルイミダゾール等のイミダゾール誘導体;アセトグアナミン、ベンゾグアナミン等のグアナミン類;ジアミノジフェニルメタン、m-フェニレンジアミン、m-キシレンジアミン、ジアミノジフェニルスルフォン、ジシアンジアミド、尿素、尿素誘導体、メラミン、多塩基ヒドラジド等のポリアミン類;これらの有機酸塩及び/又はエポキシアダクト;三フッ化ホウ素のアミン錯体;エチルジアミノ-S-トリアジン、2,4-ジアミノ-S-トリアジン、2,4-ジアミノ-6-キシリル-S-トリアジン等のトリアジン誘導体類;トリメチルアミン、トリエタノールアミン、N,N-ジメチルオクチルアミン、N-ベンジルジメチルアミン、ピリジン、N-メチルモルホリン、ヘキサ(N-メチル)メラミン、2,4,6-トリス(ジメチルアミノフェノール)、テトラメチルグアニジン、m-アミノフェノール等の三級アミン類;ポリビニルフェノール、ポリビニルフェノール臭素化物、フェノールノボラック、アルキルフェノールノボラック等のポリフェノール類;トリブチルホスフィン、トリフェニルホスフィン、トリス-2-シアノエチルホスフィン等の有機ホスフィン類;トリ-n-ブチル(2,5-ジヒドロキシフェニル)ホスホニウムブロマイド、ヘキサデシルトリブチルホスニウムクロライド等のホスホニウム塩類;ベンジルトリメチルアンモニウムクロライド、フェニルトリブチルアンモニウムクロライド等の4級アンモニウム塩類;上記の多塩基酸無水物;ジフェニルヨードニウムテトラフルオロボレート、トリフェニルスルホニウムヘキサフルオロアンチモネート、2,4,6-トリフェニルチオピリリウムヘキサフルオロホスフェートが挙げられる。 Specific examples of such epoxy resin curing agents include, for example, 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methyl Imidazole derivatives such as -5-hydroxymethylimidazole; guanamines such as acetoguanamine and benzoguanamine; diaminodiphenylmethane, m-phenylenediamine, m-xylenediamine, diaminodiphenylsulfone, dicyandiamide, urea, urea derivatives, melamine, polybasic hydrazide, etc. Of these organic acid salts and / or epoxy adducts; amine complexes of boron trifluoride; ethyldiamino-S-triazine, 2,4-diamino-S-triazine, 2,4-diamino-6-xylyl- Triazine derivatives such as triazine; trimethylamine, triethanolamine, N, N-dimethyloctylamine, N-benzyldimethylamine, pyridine, N-methylmorpholine, hexa (N-methyl) melamine, 2,4,6-tris Tertiary amines such as (dimethylaminophenol), tetramethylguanidine, m-aminophenol; polyphenols such as polyvinylphenol, polyvinylphenol bromide, phenol novolac, alkylphenol novolac; tributylphosphine, triphenylphosphine, tris-2- Organic phosphines such as cyanoethylphosphine; phosphonium such as tri-n-butyl (2,5-dihydroxyphenyl) phosphonium bromide, hexadecyltributylphosnium chloride Quaternary ammonium salts such as benzyltrimethylammonium chloride and phenyltributylammonium chloride; the above polybasic acid anhydrides; diphenyliodonium tetrafluoroborate, triphenylsulfonium hexafluoroantimonate, 2,4,6-triphenylthiopyri A lithium hexafluorophosphate is mentioned.
 これらのエポキシ樹脂硬化剤は、1種を単独で又は2種以上を組み合わせて用いられる。エポキシ樹脂硬化剤を用いる場合、その含有量は、(A)成分の総量100質量部を基準として、1~60質量部であることが好ましく、5~50質量部であることがより好ましい。 These epoxy resin curing agents are used singly or in combination of two or more. When an epoxy resin curing agent is used, the content thereof is preferably 1 to 60 parts by mass, and more preferably 5 to 50 parts by mass based on 100 parts by mass of the total amount of component (A).
 本実施形態に係る感光性樹脂組成物には、さらに、密着性、塗膜硬度等の諸特性を更に向上させる目的で、必要に応じて、硫酸バリウム、チタン酸バリウム、シリカ、タルク、焼成カオリン、炭酸マグネシウム、酸化アルミニウム、水酸化アルミニウム、雲母等の公知の無機フィラーを含有させることもできる。これらは1種を単独で又は2種類以上を組み合わせて用いることができる。これらの中でも、印刷性及び硬化膜の硬度を向上できる観点から、シリカ又は硫酸バリウムが好ましい。また、無機フィラーを用いる場合、その含有量は、(A)成分の総量100質量部を基準として、1~200質量部であることが好ましく、5~150質量部であることがより好ましく、10~120質量部であることが更に好ましい。 The photosensitive resin composition according to the present embodiment further includes barium sulfate, barium titanate, silica, talc, and calcined kaolin for the purpose of further improving various properties such as adhesion and coating film hardness. In addition, known inorganic fillers such as magnesium carbonate, aluminum oxide, aluminum hydroxide, and mica can be contained. These can be used alone or in combination of two or more. Among these, silica or barium sulfate is preferable from the viewpoint of improving the printability and the hardness of the cured film. When the inorganic filler is used, its content is preferably 1 to 200 parts by weight, more preferably 5 to 150 parts by weight, based on 100 parts by weight of the total amount of component (A). More preferably, it is ˜120 parts by mass.
 感光性樹脂組成物には、必要に応じて、フタロシアニン・ブルー、フタロシアニン・グリーン、アイオディン・グリーン、ジアゾイエロー、クリスタルバイオレット、酸化チタン、カーボンブラック、ナフタレンブラック等の公知の着色剤;ハイドロキノン、メチルハイドロキノン、ハイドロキノンモノメチルエーテル、カテコール、ピロガロール等の重合禁止剤;ベントン、モンモリロナイト等の増粘剤;シリコーン系、フッ素系、ビニル樹脂系の消泡剤;シランカップリング剤等の公知慣用の各種添加剤を用いることができる。さらに、臭素化エポキシ化合物、酸変性臭素化エポキシ化合物、アンチモン化合物、リン系化合物のホスフェート化合物、芳香族縮合リン酸エステル、含ハロゲン縮合リン酸エステル等の難燃剤、密着性付与剤、レベリング剤、酸化防止剤、顔料などを用いることができる。 In the photosensitive resin composition, if necessary, known colorants such as phthalocyanine blue, phthalocyanine green, iodine green, diazo yellow, crystal violet, titanium oxide, carbon black, naphthalene black; hydroquinone, methylhydroquinone Polymerization inhibitors such as hydroquinone monomethyl ether, catechol and pyrogallol; thickeners such as benton and montmorillonite; silicone, fluorine and vinyl resin antifoaming agents; and various conventional and conventional additives such as silane coupling agents Can be used. In addition, flame retardants such as brominated epoxy compounds, acid-modified brominated epoxy compounds, antimony compounds, phosphate compounds phosphate compounds, aromatic condensed phosphate esters, halogen-containing condensed phosphate esters, adhesion imparting agents, leveling agents, Antioxidants, pigments and the like can be used.
 感光性樹脂組成物は、上述した各配合成分をロールミル、ビーズミル等で均一に混練又は混合することにより得ることができる。 The photosensitive resin composition can be obtained by uniformly kneading or mixing each of the above-described blending components with a roll mill, a bead mill or the like.
 感光性樹脂組成物は、プリント配線板におけるソルダーレジスト、高密度多層板における層間絶縁膜、半導体パッケージ用ソルダーレジスト等の電子材料分野において、像形成性、耐熱性、密着性、機械特性、耐薬品性、電気特性等に優れた永久マスクレジストとして有用である。 Photosensitive resin compositions are used in the field of electronic materials such as solder resists in printed wiring boards, interlayer insulation films in high-density multilayer boards, solder resists for semiconductor packages, and image resistance, heat resistance, adhesion, mechanical properties, and chemical resistance. It is useful as a permanent mask resist having excellent properties and electrical characteristics.
 次に、上述した感光性樹脂組成物を用いた感光性エレメントについて説明する。本実施形態に係る感光性エレメントは、支持体と、支持体上に設けられた感光層とで構成される。感光層は、上述した感光性樹脂組成物からなる層である。また、感光性エレメントは、感光層上の支持体とは反対側の面を保護フィルムで被覆してもよい。 Next, a photosensitive element using the above-described photosensitive resin composition will be described. The photosensitive element according to this embodiment includes a support and a photosensitive layer provided on the support. The photosensitive layer is a layer made of the above-described photosensitive resin composition. The photosensitive element may be coated with a protective film on the surface on the photosensitive layer opposite to the support.
 感光層は、本実施形態に係る感光性樹脂組成物を上記溶剤又は混合溶剤に溶解して固形分30~70質量%程度の溶液とした後に、この溶液を支持体上に塗布して形成することが好ましい。 The photosensitive layer is formed by dissolving the photosensitive resin composition according to this embodiment in the above solvent or mixed solvent to obtain a solution having a solid content of about 30 to 70% by mass, and then applying this solution on a support. It is preferable.
 感光層の厚みは、用途により異なるが、加熱及び/又は熱風吹き付けにより溶剤を除去した乾燥後の厚みで、10~100μmであることが好ましく、20~60μmであることがより好ましい。 The thickness of the photosensitive layer varies depending on the application, but is preferably 10 to 100 μm, more preferably 20 to 60 μm, after drying after removing the solvent by heating and / or hot air blowing.
 感光性エレメントが備える支持体としては、例えば、ポリエチレンテレフタレート、ポリプロピレン、ポリエチレン、ポリエステル等の耐熱性及び耐溶剤性を有する重合体フィルムが挙げられる。 Examples of the support provided in the photosensitive element include polymer films having heat resistance and solvent resistance such as polyethylene terephthalate, polypropylene, polyethylene, and polyester.
 支持体の厚みは、5~100μmであることが好ましく、10~30μmであることがより好ましい。 The thickness of the support is preferably 5 to 100 μm, more preferably 10 to 30 μm.
 上述したような支持体と感光層との2層からなる感光性エレメント又は支持体と感光層と保護フィルムとの3層からなる感光性エレメントは、例えば、そのまま貯蔵してもよく、保護フィルムを介在させた上で巻芯にロール状に巻き取って保管してもよい。 The photosensitive element consisting of two layers of the support and the photosensitive layer as described above or the photosensitive element consisting of three layers of the support, the photosensitive layer and the protective film may be stored as it is, for example. After interposing, it may be wound around the core in a roll shape and stored.
 本発明の実施形態に係るレジストパターンの形成方法は、上述した感光性樹脂組成物からなる感光層を基板上に積層する積層工程と、上記感光層に活性光線を画像状に照射して露光部を光硬化させる露光工程と、上記露光部以外の領域を除去する現像工程と、を含む方法である。 The method for forming a resist pattern according to an embodiment of the present invention includes a laminating step of laminating a photosensitive layer made of the above-described photosensitive resin composition on a substrate, and an exposed portion by irradiating the photosensitive layer with an actinic ray in an image form. Is an exposure process for photo-curing, and a development process for removing regions other than the exposed area.
 基板(銅張積層板等)上への感光層の積層は、感光性樹脂組成物を、スクリーン印刷法、スプレー法、ロールコート法、カーテンコート法、静電塗装法等の方法で10~200μmの膜厚で基板上に塗布し、塗膜を60~110℃で乾燥させることで行うことができる。 Lamination of the photosensitive layer on the substrate (copper-clad laminate, etc.) is performed by coating the photosensitive resin composition with a method such as screen printing, spraying, roll coating, curtain coating, electrostatic coating, etc. The film can be applied on the substrate with a film thickness of 5 mm and dried at 60 to 110 ° C.
 また、上述した感光性エレメントを用いて、基板上への感光層の積層を行ってもよい。その場合の積層方法としては、感光性エレメントが保護フィルムを備える場合には保護フィルムを除去した後、感光性層を70℃~130℃程度に加熱しながら基板に0.1MPa~1MPa程度(1kgf/cm~10kgf/cm程度)の圧力で圧着する方法等が挙げられる。かかる積層工程は減圧下で行ってもよい。感光層が積層される基板の表面は、通常、金属面であるが、特に制限されない。 Moreover, you may laminate | stack a photosensitive layer on a board | substrate using the photosensitive element mentioned above. In this case, when the photosensitive element includes a protective film, the protective film is removed, and then the photosensitive layer is heated to about 70 ° C. to 130 ° C. while being applied to the substrate at about 0.1 MPa to 1 MPa (1 kgf). / Cm 2 to 10 kgf / cm 2 ). Such a lamination process may be performed under reduced pressure. The surface of the substrate on which the photosensitive layer is laminated is usually a metal surface, but is not particularly limited.
 このようにして基板上に積層された感光層に対して、活性光線を画像状に照射して露光部を光硬化させる。活性光線を画像状に照射する方法としては、例えばネガマスクパターンを用いる方法、直接描画露光法等が挙げられる。この際、感光性エレメントを用いて感光層を積層した場合には、感光層上に支持体が存在することになるが、この支持体が活性光線に対して透明である場合には、支持体を通して活性光線を照射することができる。また、支持体が活性光線に対して遮光性を示す場合には、支持体を除去した後に感光層に活性光線を照射する。 The photosensitive layer laminated on the substrate in this way is irradiated with actinic rays in the form of an image to photocur the exposed portion. Examples of the method of irradiating actinic rays in the form of an image include a method using a negative mask pattern and a direct drawing exposure method. In this case, when a photosensitive layer is laminated using a photosensitive element, a support is present on the photosensitive layer. When this support is transparent to actinic rays, the support is present. An actinic ray can be irradiated through. In the case where the support is light-shielding against actinic rays, the photosensitive layer is irradiated with actinic rays after the support is removed.
 活性光線の光源としては、従来公知の光源を用いることができる。例えば、カーボンアーク灯、水銀蒸気アーク灯、高圧水銀灯、超高圧水銀灯、キセノンランプ等の紫外線、アルゴンレーザ等のガスレーザ、YAGレーザ等の固体レーザなど、活性光線を有効に放射するものが用いられる。 A conventionally known light source can be used as the active light source. For example, a lamp that effectively emits actinic rays, such as an ultraviolet ray such as a carbon arc lamp, a mercury vapor arc lamp, a high-pressure mercury lamp, an ultra-high pressure mercury lamp, or a xenon lamp, a gas laser such as an argon laser, or a solid laser such as a YAG laser is used.
 露光部の形成後、露光部以外の領域(感光層の未露光部)を現像により除去することで、レジストパターンが形成される。かかる未露光部の除去方法としては、例えば、感光層上に支持体が存在する場合にはオートピーラー等で支持体を除去し、アルカリ性水溶液、水系現像液、有機溶剤等の現像液によるウェット現像、又はドライ現像等で未露光部を除去して現像する方法が挙げられる。ウェット現像に用いるアルカリ性水溶液としては、例えば、0.1質量%~5質量%炭酸ナトリウムの希薄溶液、0.1~5質量%炭酸カリウムの希薄溶液、0.1質量%~5質量%水酸化ナトリウムの希薄溶液等が挙げられる。アルカリ性水溶液のpHは9~11の範囲とすると好ましく、その温度は、感光層の現像性に合わせて調整される。また、アルカリ性水溶液中には、界面活性剤、消泡剤、有機溶剤等を混入させてもよい。上記現像の方式としては、例えば、ディップ方式、スプレー方式、ブラッシング、スラッピング等が挙げられる。 After formation of the exposed portion, a region other than the exposed portion (unexposed portion of the photosensitive layer) is removed by development to form a resist pattern. As a method for removing such an unexposed portion, for example, when a support is present on the photosensitive layer, the support is removed with an auto peeler or the like, and wet development with a developer such as an alkaline aqueous solution, an aqueous developer, or an organic solvent is performed. Or a method of developing by removing an unexposed portion by dry development or the like. Examples of the alkaline aqueous solution used for wet development include a dilute solution of 0.1% by mass to 5% by mass of sodium carbonate, a dilute solution of 0.1-5% by mass of potassium carbonate, and 0.1% by mass to 5% by mass of hydroxide. A dilute solution of sodium and the like can be mentioned. The pH of the alkaline aqueous solution is preferably in the range of 9 to 11, and the temperature is adjusted according to the developability of the photosensitive layer. Moreover, you may mix surfactant, an antifoamer, an organic solvent, etc. in alkaline aqueous solution. Examples of the development method include a dip method, a spray method, brushing, and slapping.
 次に、現像後の処理として露光部を後露光(紫外線露光)及び/又は後加熱によって十分に硬化させて硬化膜を得る。後露光は、1~5J/cmの露光量で行うことが好ましい。後加熱は、100~200℃で30分~12時間行うことが好ましい。 Next, as a treatment after development, the exposed portion is sufficiently cured by post-exposure (ultraviolet light exposure) and / or post-heating to obtain a cured film. The post-exposure is preferably performed with an exposure amount of 1 to 5 J / cm 2 . Post-heating is preferably performed at 100 to 200 ° C. for 30 minutes to 12 hours.
 本発明の実施形態に係るプリント配線板の製造方法においては、上記レジストパターンの形成方法によりレジストパターンの形成された回路形成用基板を、エッチング又はめっきする。ここで、上記感光性樹脂組成物からなるレジストパターンは、像形成性、耐熱性、密着性、機械特性、耐薬品性、電気特性等に優れた永久マスクレジストとして有効に機能する。 In the method for manufacturing a printed wiring board according to the embodiment of the present invention, the circuit forming substrate on which the resist pattern is formed by the above resist pattern forming method is etched or plated. Here, the resist pattern made of the photosensitive resin composition functions effectively as a permanent mask resist having excellent image forming properties, heat resistance, adhesion, mechanical properties, chemical resistance, electrical properties, and the like.
[ビルドアップ基板]
 本実施形態に係る感光性樹脂組成物は、ビルドアップ基板用プリント配線板の永久マスクレジストの形成に好適に用いることができる。すなわち、本実施形態によれば、上述の感光性樹脂組成物の硬化物からなる永久マスクレジストを有するビルドアップ基板を提供できる。図1及び図2にビルドアップ基板用プリント配線板に永久マスクレジストを形成する例を示す。
[Build-up board]
The photosensitive resin composition which concerns on this embodiment can be used suitably for formation of the permanent mask resist of the printed wiring board for buildup boards. That is, according to the present embodiment, it is possible to provide a build-up substrate having a permanent mask resist made of a cured product of the above-described photosensitive resin composition. 1 and 2 show an example in which a permanent mask resist is formed on a printed wiring board for a buildup board.
 図1(a)はビルドアップ層形成済みのコア基材を示す模式断面図である。コア基材1には、銅配線2が形成されている。このコア基材上に、本実施形態に係る感光性樹脂組成物からなる感光層3を、ラミネート又は塗布により、基板上に形成する(図1(b)参照)。続いて所望のパターンを有する露光用マスク4を介し、感光層3を露光する(図1(c)参照)。続いて、現像することにより、所望の開口を有するレジストパターンが形成される(図1(d)参照)。形成したレジストパターンに対して、露光及び加熱を行うことで、永久マスクレジスト5を基板上に形成する(図1(e)参照)。その後、無電解Ni金めっきを行い、無電解Ni金めっき層6を設け(図2(a)参照)、更に電解金めっきを行う工程を実施して、電解金めっき層7を形成して(図2(b)参照)、ビルドアップ基板が形成される。 FIG. 1 (a) is a schematic cross-sectional view showing a core base material on which a buildup layer has been formed. A copper wiring 2 is formed on the core substrate 1. On this core substrate, the photosensitive layer 3 made of the photosensitive resin composition according to the present embodiment is formed on a substrate by lamination or coating (see FIG. 1B). Subsequently, the photosensitive layer 3 is exposed through an exposure mask 4 having a desired pattern (see FIG. 1C). Subsequently, development is performed to form a resist pattern having a desired opening (see FIG. 1D). A permanent mask resist 5 is formed on the substrate by exposing and heating the formed resist pattern (see FIG. 1E). Thereafter, electroless Ni gold plating is performed to provide an electroless Ni gold plating layer 6 (see FIG. 2A), and further, a step of performing electrolytic gold plating is performed to form an electrolytic gold plating layer 7 ( As shown in FIG. 2B, a build-up substrate is formed.
 以下、実施例及び比較例に基づいて本発明をより具体的に説明するが、本発明は以下の実施例に限定されるものではない。 Hereinafter, the present invention will be described more specifically based on examples and comparative examples, but the present invention is not limited to the following examples.
 [樹脂Aの合成]
 撹拌機、還流冷却器及び温度計を備えたフラスコに、(a)成分としてビスフェノールF型エポキシ樹脂(商品名:806、ジャパンエポキシレジン社製、エポキシ当量:180)1052質量部、(b)成分としてアクリル酸144質量部、メチルハイドロキノン1質量部、カルビトールアセテート850質量部及びソルベントナフサ100質量部を仕込み、70℃で加熱撹拌して混合物を溶解させた。次に、得られた溶液を50℃まで冷却し、そこにトリフェニルホスフィン2質量部及びソルベントナフサ75質量部を加えて100℃に加熱し、固形分酸価が1mgKOH/g以下になるまで反応させた。次に、得られた溶液を50℃まで冷却し、そこに(c)成分としてテトラヒドロ無水フタル酸745質量部、カルビトールアセテート75質量部及びソルベントナフサ75質量部を加え、80℃で3時間反応させた。これにより、(A)成分としての、固形分酸価80mgKOH/g、固形分62質量%の不飽和基含有ポリカルボン酸樹脂(樹脂A)を得た。
[Synthesis of Resin A]
In a flask equipped with a stirrer, a reflux condenser and a thermometer, 1052 parts by mass of (b) component as component (a), bisphenol F type epoxy resin (trade name: 806, manufactured by Japan Epoxy Resin Co., Ltd., epoxy equivalent: 180) As above, 144 parts by mass of acrylic acid, 1 part by mass of methyl hydroquinone, 850 parts by mass of carbitol acetate and 100 parts by mass of solvent naphtha were charged and heated and stirred at 70 ° C. to dissolve the mixture. Next, the obtained solution is cooled to 50 ° C., 2 parts by mass of triphenylphosphine and 75 parts by mass of solvent naphtha are added thereto, heated to 100 ° C., and reacted until the solid content acid value becomes 1 mgKOH / g or less. I let you. Next, the obtained solution was cooled to 50 ° C., and 745 parts by mass of tetrahydrophthalic anhydride, 75 parts by mass of carbitol acetate and 75 parts by mass of solvent naphtha were added as component (c), and reacted at 80 ° C. for 3 hours. I let you. As a result, an unsaturated group-containing polycarboxylic acid resin (resin A) having a solid content acid value of 80 mgKOH / g and a solid content of 62% by mass was obtained as the component (A).
 (実施例1~12及び比較例1~5)
 下記表1に示す配合組成(単位:質量部)に従って組成物を配合した後、固形分濃度が70質量%になるようにカルビトールアセテートを加えて、感光性樹脂組成物を得た。なお、下記表1中の各成分の配合量は、固形分の配合量を示す。
Figure JPOXMLDOC01-appb-T000018
(Examples 1 to 12 and Comparative Examples 1 to 5)
After blending the composition according to the blending composition (unit: part by mass) shown in Table 1 below, carbitol acetate was added so that the solid content concentration would be 70% by weight to obtain a photosensitive resin composition. In addition, the compounding quantity of each component in following Table 1 shows the compounding quantity of solid content.
Figure JPOXMLDOC01-appb-T000018
 なお、表1中の各成分の詳細は以下のとおりである。 The details of each component in Table 1 are as follows.
(A)成分
EXP-2810:クレゾールノボラック型酸変性エポキシアクリレート(重量平均分子量7000、酸価65mgKOH/g、DIC社製)、
ZAR-1753:ビスフェノールA型酸変性エポキシアクリレート(重量平均分子量10000、酸価70mgKOH/g、日本化薬社製)
UXE-3024:ウレタン変性ビスフェノールA型酸変性エポキシアクリレート(重量平均分子量10000、酸価67mgKOH/g、日本化薬社製)、
(A) Component EXP-2810: Cresol novolac type acid-modified epoxy acrylate (weight average molecular weight 7000, acid value 65 mg KOH / g, manufactured by DIC),
ZAR-1753: Bisphenol A acid-modified epoxy acrylate (weight average molecular weight 10,000, acid value 70 mg KOH / g, manufactured by Nippon Kayaku Co., Ltd.)
UXE-3024: urethane-modified bisphenol A acid-modified epoxy acrylate (weight average molecular weight 10,000, acid value 67 mgKOH / g, manufactured by Nippon Kayaku Co., Ltd.)
(B)成分
I-907:2-メチル-1-(4-メチルチオフェニル)-2-モルフォリノプロパン-1-オン(イルガキュア907、チバスペシャルティーケミカルズ社製)、
I-651:2,2-ジメトキシ-1,2-ジフェニルエタン-1-オン(2,2-ジメトキシ-2-フェニルアセトフェノン、IRGACURE 651、BASF社製)、
OXE-02:エタノン,1-[9-エチル-6-(2-メチルベンゾイル)-9H-カルバゾール-3-イル]-,1-(O-アセチルオキシム)(IRGACURE-OXE-02、BASF社製)、
N-1919:オキシムエステル系光重合開始剤(アデカオプトマーN-1919、ADEKA社製)、
TPO:2,4,6-トリメチルベンゾイル-ジフェニル-ホスフィンオキサイド(LUCIRIN-TPO、BASF社製)、
I-819:ビス(2,4,6-トリメチルベンゾイル)-フェニルホスフィンオキサイド(IRGACURE-819、BASF社製)、
DETX:2,4-ジエチルチオキサントン(KAYACURE-DETX-S、日本化薬社製)、
DBA:9,10-ジブトキシアントラセン(川崎化成工業社製、商品名)。
(B) Component I-907: 2-methyl-1- (4-methylthiophenyl) -2-morpholinopropan-1-one (Irgacure 907, manufactured by Ciba Specialty Chemicals),
I-651: 2,2-dimethoxy-1,2-diphenylethane-1-one (2,2-dimethoxy-2-phenylacetophenone, IRGACURE 651, manufactured by BASF)
OXE-02: Ethanone, 1- [9-ethyl-6- (2-methylbenzoyl) -9H-carbazol-3-yl]-, 1- (O-acetyloxime) (IRGACURE-OXE-02, manufactured by BASF ),
N-1919: Oxime ester photopolymerization initiator (Adekaoptomer N-1919, manufactured by ADEKA),
TPO: 2,4,6-trimethylbenzoyl-diphenyl-phosphine oxide (LUCIRIN-TPO, manufactured by BASF),
I-819: Bis (2,4,6-trimethylbenzoyl) -phenylphosphine oxide (IRGACURE-819, manufactured by BASF),
DETX: 2,4-diethylthioxanthone (KAYACURE-DETX-S, manufactured by Nippon Kayaku Co., Ltd.)
DBA: 9,10-dibutoxyanthracene (trade name, manufactured by Kawasaki Kasei Kogyo Co., Ltd.).
(C)成分
4-ヒドロキシ-TEMPO:4-ヒドロキシ-2,2,6,6-テトラメチルピペリジン1-オキシルフリーラジカル(東京化成工業社製)、
4-ベンゾイルオキシ-TEMPO:4-ヒドロキシ-2,2,6,6-テトラメチルピペリジン1-オキシルベンゾアートフリーラジカル(東京化成工業社製)、
4-アセトアミド-TEMPO:4-アセトアミド-2,2,6,6-テトラメチルピペリジン1-オキシルフリーラジカル(東京化成工業社製)。
(C) Component 4-hydroxy-TEMPO: 4-hydroxy-2,2,6,6-tetramethylpiperidine 1-oxyl free radical (manufactured by Tokyo Chemical Industry Co., Ltd.)
4-benzoyloxy-TEMPO: 4-hydroxy-2,2,6,6-tetramethylpiperidine 1-oxylbenzoate free radical (manufactured by Tokyo Chemical Industry Co., Ltd.)
4-acetamido-TEMPO: 4-acetamido-2,2,6,6-tetramethylpiperidine 1-oxyl free radical (manufactured by Tokyo Chemical Industry Co., Ltd.).
(D)成分
NC-3000H:ビフェニルアラルキル型エポキシ樹脂(日本化薬社製、商品名)、
YSLV-80:ビスフェノールF型エポキシ樹脂(新日鐵化学社製、商品名)。
(D) Component NC-3000H: biphenyl aralkyl type epoxy resin (product name) manufactured by Nippon Kayaku Co., Ltd.
YSLV-80: Bisphenol F type epoxy resin (manufactured by Nippon Steel Chemical Co., Ltd., trade name).
その他成分
DPHA:ジペンタエリスリトールヘキサアクリレート(カヤラッドDPHA、日本化薬社製)、
C11-A:イミダゾール化合物(四国化成工業社製)、
ESLV-120TE:1,3,5-トリグリシジルイソシアネート(新日鐵化学社製)、
TBC:4-t-ブチルカテコール(DIC社製)、
フタロシアニングリーン:(山陽色素社製)、
γ-グリシドキシプロピルトリエトキシシラン:(信越シリコーン社製)、
硫酸バリウム:B-30(堺化学社製)、
シリカ:SC-2050(アドマテックス社製)、
メラミン:(日産化学社製)、
PB3600:エポキシ化ポリブタジエン(ダイセル社製)、
顔料:フタロシアニンブルー(東洋インキ社製)。
Other components DPHA: dipentaerythritol hexaacrylate (Kayarad DPHA, manufactured by Nippon Kayaku Co., Ltd.)
C11-A: imidazole compound (manufactured by Shikoku Kasei Kogyo Co., Ltd.)
ESLV-120TE: 1,3,5-triglycidyl isocyanate (manufactured by Nippon Steel Chemical Co., Ltd.)
TBC: 4-t-butylcatechol (manufactured by DIC),
Phthalocyanine green: (Sanyo dye company)
γ-glycidoxypropyltriethoxysilane: (manufactured by Shin-Etsu Silicone),
Barium sulfate: B-30 (manufactured by Sakai Chemical)
Silica: SC-2050 (manufactured by Admatechs),
Melamine: (Nissan Chemical)
PB3600: Epoxidized polybutadiene (manufactured by Daicel),
Pigment: phthalocyanine blue (manufactured by Toyo Ink).
(評価基板の作製A)
 実施例1~3及び比較例1~2の感光性樹脂組成物を、スピンコータにより乾燥後の厚さが20μmとなるように、銅張積層板上に塗布し、ホットプレートにより75℃で10分間乾燥させた。塗布面に16μm厚のポリエチレンテレフタレートフィルムを80℃でラミネートし、評価基板を得た。得られた試験板を用い、以下に示した方法により各特性の評価を行った。その結果をまとめて表2に示す。
(評価基板の作製B)
 実施例4~12及び比較例3~5の感光性樹脂組成物を支持体である16μm厚のポリエチレンテレフタレートフィルム(G2-16、帝人社製、商品名)上に均一に塗布することにより感光層を形成し、それを、熱風対流式乾燥機を用いて100℃で約10分間乾燥した。感光層の乾燥後の膜厚は、25μmであった。
(Production of Evaluation Board A)
The photosensitive resin compositions of Examples 1 to 3 and Comparative Examples 1 and 2 were applied on a copper clad laminate so that the thickness after drying was 20 μm by a spin coater, and 10 minutes at 75 ° C. by a hot plate. Dried. A 16 μm thick polyethylene terephthalate film was laminated at 80 ° C. on the coated surface to obtain an evaluation substrate. Each characteristic was evaluated by the method shown below using the obtained test plate. The results are summarized in Table 2.
(Production of evaluation board B)
A photosensitive layer is obtained by uniformly coating the photosensitive resin compositions of Examples 4 to 12 and Comparative Examples 3 to 5 on a 16 μm-thick polyethylene terephthalate film (G2-16, trade name, manufactured by Teijin Limited) as a support. Was dried at 100 ° C. for about 10 minutes using a hot air convection dryer. The film thickness after drying of the photosensitive layer was 25 μm.
 続いて、感光層の支持体と接している側とは反対側の表面上に、ポリエチレンフィルム(NF-15、タマポリ社製、商品名)を保護フィルムとして貼り合わせ、感光性エレメントを得た。次に12μm厚の銅箔をガラスエポキシ基材に積層したプリント配線板用基板(E-679、日立化成社製、商品名)の銅表面を砥粒ブラシで研磨し、水洗後、乾燥した。このプリント配線板用基板上にプレス式真空ラミネータ(MVLP-500、名機製作所製、商品名)を用いて、プレス熱板温度70℃、真空引き時間20秒、ラミネートプレス時間30秒、気圧4kPa以下、圧着圧力0.4MPaの条件の下、上記感光性エレメントの保護フィルムを剥離して積層し、評価基板を得た。得られた試験板を用い、以下に示した方法により各特性の評価を行った。その結果をまとめて表2に示す。 Subsequently, on the surface of the photosensitive layer opposite to the side in contact with the support, a polyethylene film (NF-15, product name, manufactured by Tamapoly Co., Ltd.) was bonded as a protective film to obtain a photosensitive element. Next, the copper surface of a printed wiring board substrate (E-679, manufactured by Hitachi Chemical Co., Ltd., trade name) in which a 12 μm thick copper foil was laminated on a glass epoxy substrate was polished with an abrasive brush, washed with water and dried. Using a press-type vacuum laminator (MVLP-500, trade name, manufactured by Meiki Seisakusho) on this printed wiring board substrate, the press hot plate temperature is 70 ° C., the evacuation time is 20 seconds, the lamination press time is 30 seconds, and the atmospheric pressure is 4 kPa. Hereinafter, the protective film of the photosensitive element was peeled and laminated under the condition of a pressure bonding pressure of 0.4 MPa to obtain an evaluation substrate. Each characteristic was evaluated by the method shown below using the obtained test plate. The results are summarized in Table 2.
(現像性)
 評価基板の感光層にビアマスク開口寸法が100μmのマスクを置き、平行光露光機(商品名:EXM-1201,オーク製作所社製)を用いて積算露光量200mJ/cmを照射した後、1%の炭酸ナトリウム水溶液で60秒間、0.176MPa(1.8kgf/cm)の圧力でスプレー現像を行った。その後、評価基板を目視観察することにより現像残りの有無を確認し、以下の基準に従って評価を行った。
A:現像残りなし。
B:現像残りあり。
(Developability)
A mask with a via mask opening dimension of 100 μm is placed on the photosensitive layer of the evaluation substrate, and irradiated with an integrated exposure dose of 200 mJ / cm 2 using a parallel light exposure machine (trade name: EXM-1201, manufactured by Oak Manufacturing Co., Ltd.), 1% Spray development was performed with a sodium carbonate aqueous solution at a pressure of 0.176 MPa (1.8 kgf / cm 2 ) for 60 seconds. Thereafter, the evaluation substrate was visually observed to confirm the presence or absence of the development residue, and evaluated according to the following criteria.
A: No development residue.
B: Development remains.
(解像性)
 評価基板の感光層に解像性評価用ネガとしてライン幅/スペース幅=6/6~47/47(単位:μm)の配線パターンを有するフォトツールを使用し、平行光露光機(商品名:EXM-1201、オーク製作所社製)を用いて積算露光量200mJ/cmを露光することによって評価した。ここで、露光後の現像処理によって未露光部をきれいに除去することができ、なおかつラインが蛇行又は欠けを生じることなく形成されたライン幅/スペース幅のうち最も小さい値(単位:μm)を、解像性とした。解像性の評価は数値が小さいほど良好である。
(Resolution)
Using a photo tool having a wiring pattern of line width / space width = 6/6 to 47/47 (unit: μm) as a negative for resolution evaluation on the photosensitive layer of the evaluation substrate, a parallel light exposure machine (trade name: Evaluation was performed by exposing an integrated exposure amount of 200 mJ / cm 2 using EXM-1201 (manufactured by Oak Manufacturing Co., Ltd.). Here, the unexposed portion can be removed cleanly by the development processing after exposure, and the smallest value (unit: μm) of the line width / space width formed without causing meandering or chipping of the line, Resolution was assumed. The smaller the numerical value, the better the evaluation of resolution.
(露光量裕度)
 評価基板の感光層に、平行光露光機(商品名:EXM-1201、オーク製作所社製)を用いて、ビア幅/スペース幅=50/50(単位:μm)のパターンを、積算露光量200mJ/cmから600mJ/cmで露光した。その後1%の炭酸ナトリウム水溶液で60秒間、0.176MPa(1.8kgf/cm)の圧力でスプレー現像を行った。50μmのビアが完全に埋まるまでの露光量を観察し、以下の基準に従って評価した。
A:50μmのビアが200から600mJ/cmの間で埋まらない。
B:50μmのビアが200から400mJ/cmの間で埋まらないが、400mJ/cmを超えると埋まる。
C:50μmのビアが300mJ/cmを超えると埋まる。
(Exposure tolerance)
A pattern of via width / space width = 50/50 (unit: μm) was applied to the photosensitive layer of the evaluation substrate using a parallel light exposure machine (trade name: EXM-1201, manufactured by Oak Manufacturing Co., Ltd.). / Cm 2 to 600 mJ / cm 2 . Thereafter, spray development was performed with a 1% aqueous sodium carbonate solution for 60 seconds at a pressure of 0.176 MPa (1.8 kgf / cm 2 ). The amount of exposure until the 50 μm via was completely filled was observed and evaluated according to the following criteria.
A: 50 μm vias are not filled between 200 and 600 mJ / cm 2 .
B: A 50 μm via is not buried between 200 and 400 mJ / cm 2 , but is buried when it exceeds 400 mJ / cm 2 .
C: Filled when a 50 μm via exceeds 300 mJ / cm 2 .
(ビア形状再現性(1)同一パターンの中央vs.端部)
 評価基板の感光層に、直描露光機LI-9700(大日本スクリーン社製)を用いて、ビア幅/スペース幅=100/100(単位:μm)のパターンを、積算露光量200mJ/cmで照射した。その後1%の炭酸ナトリウム水溶液で60秒間、0.176MPa(1.8kgf/cm)の圧力でスプレー現像を行った。同一基板内での中央と端部とでのビア形状を比較した。
A:中央及び端部共に良好なビア形状を形成している。
B:中央又は端部のビア形状が良好でない。
(Via shape reproducibility (1) Center vs. end of same pattern)
A pattern of via width / space width = 100/100 (unit: μm) was applied to the photosensitive layer of the evaluation substrate using a direct drawing exposure machine LI-9700 (Dainippon Screen Co., Ltd.) with an integrated exposure amount of 200 mJ / cm 2. Irradiated with. Thereafter, spray development was performed with a 1% aqueous sodium carbonate solution for 60 seconds at a pressure of 0.176 MPa (1.8 kgf / cm 2 ). The via shapes at the center and the end in the same substrate were compared.
A: A good via shape is formed at both the center and the end.
B: The shape of the via at the center or end is not good.
(ビア形状再現性(2)スペース幅100vs.10(単位:μm))
 評価基板の感光層に、直描露光機LI-9700(大日本スクリーン社製)を用いて、ビア幅100μmであり、スペース幅が100μm又は10μmのパターンを、積算露光量200mJ/cmで照射した。その後1%の炭酸ナトリウム水溶液で60秒間、0.176MPa(1.8kgf/cm)の圧力でスプレー現像を行った。スペース幅100μm及び10μmの、ビア幅100μmのビア形状を比較した。
A:スペース幅100μm、10μm共に良好なビア形状を形成している。
B:スペース幅100μm又は10μmのビア形状が良好でない。
(Via shape reproducibility (2) Space width 100 vs. 10 (unit: μm))
Using a direct drawing exposure machine LI-9700 (manufactured by Dainippon Screen Co., Ltd.), a pattern with a via width of 100 μm and a space width of 100 μm or 10 μm is irradiated to the photosensitive layer of the evaluation substrate with an integrated exposure amount of 200 mJ / cm 2 . did. Thereafter, spray development was performed with a 1% aqueous sodium carbonate solution for 60 seconds at a pressure of 0.176 MPa (1.8 kgf / cm 2 ). The via shapes with a space width of 100 μm and 10 μm and a via width of 100 μm were compared.
A: A good via shape is formed in both space widths of 100 μm and 10 μm.
B: The via shape having a space width of 100 μm or 10 μm is not good.
(耐溶剤性)
 試験板をイソプロピルアルコールに室温で30分間浸漬した後、硬化膜の外観に異常がないかを目視にて確認した。その後、セロハンテープを硬化膜に貼り付けて引き上げる剥離試験を行い、硬化膜が銅張積層板から剥離するかどうかを確認した。それらの結果から、以下の基準に従って耐溶剤性の評価を行った。
A:硬化膜の外観に異常がなく、かつ剥離試験において剥離のないもの。
B:硬化膜の外観に異常があるか、又は剥離試験において剥離するもの。
(Solvent resistance)
After immersing the test plate in isopropyl alcohol at room temperature for 30 minutes, it was visually confirmed whether or not the appearance of the cured film was abnormal. Then, the peeling test which sticks a cellophane tape on a cured film and pulls up was performed, and it was confirmed whether the cured film peeled from a copper clad laminated board. From these results, solvent resistance was evaluated according to the following criteria.
A: There is no abnormality in the appearance of the cured film, and there is no peeling in the peeling test.
B: The appearance of the cured film is abnormal or peeled off in the peel test.
(はんだ耐熱性)
 試験板の硬化膜表面にロジン系フラックスを塗布した後、260℃のはんだ槽に10秒間浸漬した。これを1サイクルとして、6サイクル繰り返した後、硬化膜の外観を目視観察し、以下の基準に従ってはんだ耐熱性の評価を行った。
A:硬化膜の外観に異常(剥離、膨れ)がなく、かつはんだのもぐりがないもの。
B:硬化膜の外観に異常(剥離、膨れ)があるか、又ははんだのもぐりがあるもの。
(Solder heat resistance)
After applying the rosin flux to the surface of the cured film of the test plate, it was immersed in a solder bath at 260 ° C. for 10 seconds. After repeating this for 6 cycles, the appearance of the cured film was visually observed, and the solder heat resistance was evaluated according to the following criteria.
A: There is no abnormality (peeling or swelling) in the appearance of the cured film, and there is no solder peeling.
B: The appearance of the cured film is abnormal (peeling or swelling), or there is solder peeling.
(密着性)
 試験板に対し、JIS K5400に準じた方法により、剥離試験を行った。すなわち、試験板の硬化膜に1mmの碁盤目を100個作製して、碁盤目にセロハンテープを貼り付けた後に引き剥がした。引き剥がし後の碁盤目の剥離状態を観察し、以下の基準に従って密着性の評価を行った。
A:碁盤目の90/100個以上が剥離なし。
B:碁盤目の50/100個以上90/100個未満が剥離なし。
C:碁盤目の50/100個未満が剥離なし。
(Adhesion)
A peel test was performed on the test plate by a method according to JIS K5400. That is, 100 1 mm grids were prepared on the cured film of the test plate, and the cellophane tape was attached to the grids, and then peeled off. The peeled state after the peeling was observed, and the adhesion was evaluated according to the following criteria.
A: 90/100 or more of the grids were not peeled.
B: 50/100 or more and less than 90/100 of the grids were not peeled.
C: Less than 50/100 grids were not peeled.
Figure JPOXMLDOC01-appb-T000019
Figure JPOXMLDOC01-appb-T000019
 1…ビルドアップ層形成済みコア基材、2…銅配線、3…感光層、4…露光用マスク、5…永久マスクレジスト、6…無電解Ni金めっき層、7…電解金めっき層。 DESCRIPTION OF SYMBOLS 1 ... Core base material with build-up layer formed, 2 ... Copper wiring, 3 ... Photosensitive layer, 4 ... Exposure mask, 5 ... Permanent mask resist, 6 ... Electroless Ni gold plating layer, 7 ... Electrolytic gold plating layer.

Claims (6)

  1.  (A)酸変性ビニル基含有エポキシ樹脂と、
    (B)光重合開始剤と、
    (C)ニトロキシル化合物と、を含有し、前記(C)ニトロキシル化合物が、下記一般式(1)で表される化合物を含む永久マスクレジスト用感光性樹脂組成物。
    Figure JPOXMLDOC01-appb-C000001
    [式(1)中、Rはヒドロキシ基、炭素数1~5のアルキル基、アセトアミド基、アミノ基、クロロアセトアミド基、シアノ基、ベンゾイルオキシ基又は下記一般式(2)で表される基を示す。]
    Figure JPOXMLDOC01-appb-C000002
    [式(2)中、n1は1~12の整数を示す。]
    (A) an acid-modified vinyl group-containing epoxy resin;
    (B) a photopolymerization initiator;
    A photosensitive resin composition for permanent mask resist, comprising (C) a nitroxyl compound, wherein the (C) nitroxyl compound comprises a compound represented by the following general formula (1).
    Figure JPOXMLDOC01-appb-C000001
    [In the formula (1), R 1 is a hydroxy group, an alkyl group having 1 to 5 carbon atoms, an acetamide group, an amino group, a chloroacetamide group, a cyano group, a benzoyloxy group, or a group represented by the following general formula (2) Indicates. ]
    Figure JPOXMLDOC01-appb-C000002
    [In the formula (2), n1 represents an integer of 1 to 12. ]
  2.  前記(A)酸変性ビニル基含有エポキシ樹脂の含有量が、感光性樹脂組成物の固形分全量を基準として、25質量%以上である、請求項1に記載の永久マスクレジスト用感光性樹脂組成物。 2. The photosensitive resin composition for permanent mask resist according to claim 1, wherein the content of the (A) acid-modified vinyl group-containing epoxy resin is 25% by mass or more based on the total solid content of the photosensitive resin composition. object.
  3.  (A)酸変性ビニル基含有エポキシ樹脂が、
     下記一般式(3)で表されるノボラック型エポキシ樹脂、下記一般式(4)で表されるビスフェノール型エポキシ樹脂、及び、下記一般式(5)で表されるサリチルアルデヒド型エポキシ樹脂からなる群より選択される少なくとも1種のエポキシ樹脂(a)と、
     ビニル基含有モノカルボン酸(b)と、
     を反応させて得られる樹脂である、請求項1又は2に記載の永久マスクレジスト用感光性樹脂組成物。
    Figure JPOXMLDOC01-appb-C000003
    [式(3)中、Rは水素原子又はメチル基を示し、Yは水素原子又はグリシジル基(ただし、水素原子/グリシジル基(モル比)は、0/100~30/70)を示し、nは1以上の整数を示す。なお、複数存在するR及びYはそれぞれ同一でも異なっていてもよい。]
    Figure JPOXMLDOC01-appb-C000004
    [式(4)中、Rは水素原子又はメチル基を示し、Yは水素原子又はグリシジル基(ただし、水素原子/グリシジル基(モル比)は、0/100~30/70)を示し、nは1以上の整数を示す。なお、複数存在するR及びYはそれぞれ同一でも異なっていてもよい。]
    Figure JPOXMLDOC01-appb-C000005
    [式(5)中、Yは水素原子又はグリシジル基(ただし、水素原子/グリシジル基(モル比)は、0/100~30/70)を示し、nは1以上の整数を示す。なお、複数存在するYはそれぞれ同一でも異なっていてもよい。]
    (A) Acid-modified vinyl group-containing epoxy resin
    The group consisting of a novolac type epoxy resin represented by the following general formula (3), a bisphenol type epoxy resin represented by the following general formula (4), and a salicylaldehyde type epoxy resin represented by the following general formula (5) At least one epoxy resin (a) selected from:
    A vinyl group-containing monocarboxylic acid (b);
    The photosensitive resin composition for permanent mask resists of Claim 1 or 2 which is resin obtained by making this react.
    Figure JPOXMLDOC01-appb-C000003
    [In the formula (3), R 6 represents a hydrogen atom or a methyl group, Y 1 represents a hydrogen atom or a glycidyl group (wherein hydrogen atom / glycidyl group (molar ratio) is 0/100 to 30/70). , N 2 represents an integer of 1 or more. A plurality of R 6 and Y 1 may be the same or different. ]
    Figure JPOXMLDOC01-appb-C000004
    [In the formula (4), R 7 represents a hydrogen atom or a methyl group, and Y 2 represents a hydrogen atom or a glycidyl group (wherein hydrogen atom / glycidyl group (molar ratio) is 0/100 to 30/70). , N 3 represents an integer of 1 or more. A plurality of R 7 and Y 2 may be the same or different. ]
    Figure JPOXMLDOC01-appb-C000005
    [In Formula (5), Y 3 represents a hydrogen atom or a glycidyl group (wherein hydrogen atom / glycidyl group (molar ratio) is 0/100 to 30/70), and n 4 represents an integer of 1 or more. A plurality of Y 3 may be the same or different. ]
  4.  支持体上に、請求項1~3のいずれか一項に記載の永久マスクレジスト用感光性樹脂組成物からなる感光層を備える、感光性エレメント。 A photosensitive element comprising a photosensitive layer comprising the photosensitive resin composition for permanent mask resist according to any one of claims 1 to 3 on a support.
  5.  請求項1~3のいずれか一項に記載の永久マスクレジスト用感光性樹脂組成物からなる感光層又は請求項4に記載の感光性エレメントの感光層を基板上に積層する積層工程と、前記感光層に活性光線を画像状に照射して露光部を光硬化させる露光工程と、前記露光部以外の領域を除去する現像工程と、を含むレジストパターンの形成方法。 A laminating step of laminating a photosensitive layer comprising the photosensitive resin composition for a permanent mask resist according to any one of claims 1 to 3 or a photosensitive layer of the photosensitive element according to claim 4; A method for forming a resist pattern, comprising: an exposure step of irradiating a photosensitive layer with an actinic ray in an image to photocure an exposed portion; and a developing step of removing a region other than the exposed portion.
  6.  請求項5に記載のレジストパターンの形成方法により、基板上に永久マスクを形成する、プリント配線板の製造方法。 A method for manufacturing a printed wiring board, wherein a permanent mask is formed on a substrate by the method for forming a resist pattern according to claim 5.
PCT/JP2013/071060 2012-08-06 2013-08-02 Photosensitive resin composition for permanent mask resist, photosensitive element, method for forming resist pattern, and method for producing printed wiring board WO2014024804A1 (en)

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