WO2014024594A1 - Processing apparatus and device manufacturing method - Google Patents
Processing apparatus and device manufacturing method Download PDFInfo
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- WO2014024594A1 WO2014024594A1 PCT/JP2013/067493 JP2013067493W WO2014024594A1 WO 2014024594 A1 WO2014024594 A1 WO 2014024594A1 JP 2013067493 W JP2013067493 W JP 2013067493W WO 2014024594 A1 WO2014024594 A1 WO 2014024594A1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/24—Curved surfaces
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
Definitions
- the present invention relates to a processing apparatus and a device manufacturing method. This application claims priority based on Japanese Patent Application No. 2012-173982 for which it applied on August 6, 2012, and uses the content here.
- An object of an aspect of the present invention is to provide a processing apparatus and a device manufacturing method capable of performing exposure with high precision even when a projection area and an illumination area are in a non-parallel relationship.
- a processing apparatus for projecting and exposing a pattern formed on a mask pattern onto a substrate, the mask holding member holding the mask pattern in a curved state, and supporting the substrate.
- the pattern formed on the mask pattern is moved by the processing apparatus of the first aspect or the second aspect while moving the substrate having the sensitive layer and the mask pattern.
- a device manufacturing method including projecting exposure to a substrate, and performing subsequent processing using a change in the sensitive layer of the projection-exposed substrate.
- the processing device U1 is, for example, a coating device, and applies a photosensitive functional liquid (a photoresist, a photosensitive coupling material, a UV curable resin liquid, etc.) to the surface of the substrate P by a printing method.
- a photosensitive functional liquid a photoresist, a photosensitive coupling material, a UV curable resin liquid, etc.
- the coating mechanism Gp1 uniformly applies the photosensitive functional liquid to the surface of the substrate P on the impression cylinder roller DR2 around which the substrate P is wound.
- the drying mechanism Gp2 rapidly removes the solvent or moisture contained in the photosensitive functional liquid applied to the substrate P.
- the processing apparatus U2 is, for example, a heating apparatus, and heats the substrate P transported from the processing apparatus U1 to a predetermined temperature (for example, about several tens of degrees Celsius to about 120 degrees Celsius), and the photosensitive functional layer applied to the surface. To settle stably.
- a predetermined temperature for example, about several tens of degrees Celsius to about 120 degrees Celsius
- a plurality of rollers and an air turn bar convey the substrate P in a folded manner.
- the heating chamber HA1 heats the substrate P that has been carried in.
- the cooling chamber part HA2 cools the substrate P so as to be in line with the environmental temperature of the subsequent process.
- the nipped drive roller DR3 carries the substrate P out.
- the processing apparatus U3 includes an exposure apparatus, and for example, irradiates the photosensitive functional layer of the substrate P conveyed from the processing apparatus U2 with ultraviolet patterning light corresponding to the circuit pattern and wiring pattern for display.
- the edge position controller EPC2 controls the center of the substrate P in the Y direction (width direction) to a fixed position.
- the nipped driving roller DR4 carries the substrate P into the exposure apparatus.
- the two sets of drive rollers DR6 and DR7 carry out the substrate P while giving a predetermined slack (play) DL to the substrate P.
- the rotating drum DM (mask holding member) holds a sheet-like mask pattern M (mask substrate) on the outer peripheral surface.
- the illumination system IU illuminates a part of the mask pattern M held on the rotary drum DM.
- the projection system PL projects an image of the illuminated part of the mask pattern M onto the projection area.
- the rotating drum DP (substrate support member) supports the substrate P transported in the X-axis direction with a predetermined tension in the projection region.
- the alignment microscope AM detects an alignment mark or the like formed in advance on the substrate P in order to relatively align (align) the pattern to be exposed (transferred) with the substrate P.
- the processing apparatus U4 is, for example, a wet processing apparatus, and performs various types of wet processing such as wet development processing and electroless plating processing on the photosensitive functional layer of the substrate P conveyed from the processing device U3. Do at least one.
- the plurality of rollers bend and transport the substrate P.
- the substrate P being transported is immersed in three treatment tanks BT1, BT2, and BT3 that are hierarchized in the Z direction.
- the nipped drive roller DR8 carries the substrate P out.
- the host control device CONT controls the operation of each processing device U1 to Un constituting the production line.
- the host control device CONT monitors the processing status and processing status of each processing device U1 to Un, monitors the transport status of the substrate P between the processing devices, and performs feedback correction and feedforward based on the results of prior and subsequent inspections and measurements. Make corrections.
- the substrate P can be selected so that its thermal expansion coefficient is not significantly large so that the amount of deformation caused by heat in various processing steps can be substantially ignored.
- the thermal expansion coefficient may be set smaller than a threshold corresponding to the process temperature or the like, for example, by mixing an inorganic filler with a resin film.
- the inorganic filler may be, for example, titanium oxide, zinc oxide, alumina, silicon oxide or the like.
- the substrate P may be a single layer of ultrathin glass having a thickness of about 100 ⁇ m manufactured by a float process or the like.
- substrate P may be the laminated body which bonded together said resin film, foil, etc. to this ultra-thin glass.
- the rotary drum DM is a mask holding member that holds the mask pattern M.
- the rotating drum DM has a cylindrical outer peripheral surface (hereinafter also referred to as a cylindrical surface DMa), and holds the mask pattern M curved in a cylindrical surface along the cylindrical surface DMa.
- the cylindrical surface is a surface curved with a predetermined radius around a predetermined center line, and is, for example, at least a part of an outer peripheral surface of a column or a cylinder.
- the rotary drum DM is provided so as to be rotatable around the rotation center axis AX1, and is rotated by torque supplied from the drive unit 11.
- the rotational position of the rotary drum DM is detected by the detection unit 12 and controlled based on the detection result by the detection unit 12.
- the control device 10 controls the rotational position of the rotary drum DM by controlling the drive unit 11 based on the detection result acquired from the detection unit 12. That is, the control device 10 can control the rotational position of the mask pattern M held on the rotary drum DM.
- the projection system PL in FIG. 2 projects (transfers) the image of the mask pattern M in the illumination region IR onto the substrate P as an equal-size erect image.
- Both the first projection optical system PL1 and the second projection optical system PL2 of the projection system PL have the same configuration, and the surface 22 that passes through the center between the rotary drum DM and the rotary drum DP and is perpendicular to the center plane 13 They are arranged symmetrically.
- the lens 44c has a fifth optical surface A5 facing the pupil surface 35 side and a sixth optical surface A6 facing the object surface 41 side.
- the lens 44c has a shape like a so-called biconcave lens.
- the fifth optical surface A5 is concave toward the pupil surface 35
- the sixth optical surface A6 is concave toward the object surface 41.
- the field lens 24 in FIG. 6 is integrally provided across the intermediate image plane 23c of the first projection module PMa and the intermediate image plane 23d of the second projection module PMb.
- a plurality of first projection modules PMa are arranged in the scanning direction (Y-axis direction), and the field lens 24 is provided integrally over the intermediate image planes 23c of the plurality of first projection modules PMa. It has been.
- the field lens 24 is also provided integrally over the intermediate image plane 23d for the plurality of second projection modules PMb.
- the illumination system IU includes a light guide rod 51 for guiding (transmitting) illumination light from the light source to the illumination optical system 21.
- the light guide rod 51 in FIG. 10 is a cylindrical member that is substantially parallel (here, substantially coaxial) with the rotation center axis AX1 of the rotary drum DM.
- the light guide rod 51 is formed so that light is reflected on the inner surface thereof.
- the light guide rod 51 guides light in a direction substantially parallel to the rotation center axis AX1 by internal reflection.
- the lenses 53a to 53c have curvatures in the scanning direction and the non-scanning direction as shown in Table 2 of FIG. 12 so that the number of condenser lenses 144 can be reduced. Are composed of different toric surfaces.
- the lens group including the lens 53a and the lens 53b has a positive refractive power
- the lens group including the lens 53c has a negative refractive power.
- the exposure apparatus EX configured as described above guides the illumination light L1 from the light source to the illumination optical system 21 by the light guide rod 51, for example, the arrangement of the light source or the arrangement of the power line for supplying power to the light source is free. The degree becomes higher. Therefore, the exposure apparatus EX easily accommodates the illumination system IU inside the rotary drum DM when, for example, a plurality of projection modules PM are provided.
Abstract
Description
本願は、2012年8月6日に出願された特願2012-173982号に基づき優先権を主張し、その内容をここに援用する。 The present invention relates to a processing apparatus and a device manufacturing method.
This application claims priority based on Japanese Patent Application No. 2012-173982 for which it applied on August 6, 2012, and uses the content here.
また、デバイス製造方法としては、送出用のロールから回収用のロールへフィルム等の基板を搬送しながら、搬送経路上において基板に露光処理などの各種処理を行うロール・ツー・ロール方式の製造方法が提案されている(下記の特許文献2参照)。 The exposure process is performed by, for example, transferring an image corresponding to an illumination area set on the mask pattern on which the exposure pattern is formed, onto a projection area set on the substrate. As an exposure apparatus that performs such exposure processing, for example, an exposure apparatus that performs exposure while rotating a cylindrical mask pattern has been proposed (see
In addition, as a device manufacturing method, a roll-to-roll manufacturing method in which various processing such as exposure processing is performed on the substrate on the transport path while transporting the substrate such as a film from the roll for delivery to the roll for collection. Has been proposed (see
また、ロール・ツー・ロール方式において、例えばロール上で湾曲している基板を露光する場合に、基板上の投影領域の位置によっては、投影領域が照明領域に対して非平行になる。このように、投影領域と照明領域とが互いに非平行な関係であると、露光の精度が低下することがある。 By the way, the exposure process may be performed in a state where the projection area is not parallel to the illumination area. For example, in an exposure apparatus that uses a mask pattern that is curved in a cylindrical surface, the projection area is not parallel to the illumination area depending on the position of the illumination area on the mask pattern.
Further, in the roll-to-roll method, for example, when exposing a substrate that is curved on a roll, the projection region is not parallel to the illumination region depending on the position of the projection region on the substrate. Thus, when the projection area and the illumination area are in a non-parallel relationship, the exposure accuracy may be reduced.
図1は、デバイス製造システムSYS(フレキシブル・ディスプレイ製造ライン)の構成例を示す図である。ここでは、供給ロールFR1から引き出された可撓性の基板P(シート、フィルムなど)が、順次、n台の処理装置U1,U2,U3,U4,U5,・・・Unを経て、回収ロールFR2に巻き上げられるまでの例を示している。 [First Embodiment]
FIG. 1 is a diagram illustrating a configuration example of a device manufacturing system SYS (flexible display manufacturing line). Here, the flexible substrate P (sheet, film, etc.) drawn out from the supply roll FR1 is sequentially passed through n processing devices U1, U2, U3, U4, U5,. The example until it winds up to FR2 is shown.
アライメント顕微鏡AMは、露光(転写)されるパターンと基板Pとを相対的に位置合せ(アライメント)するために、基板Pに予め形成されたアライメントマークなどを検出する。 In the processing apparatus U3, the rotating drum DM (mask holding member) holds a sheet-like mask pattern M (mask substrate) on the outer peripheral surface. The illumination system IU illuminates a part of the mask pattern M held on the rotary drum DM. In the processing device U3, the projection system PL projects an image of the illuminated part of the mask pattern M onto the projection area. The rotating drum DP (substrate support member) supports the substrate P transported in the X-axis direction with a predetermined tension in the projection region.
The alignment microscope AM detects an alignment mark or the like formed in advance on the substrate P in order to relatively align (align) the pattern to be exposed (transferred) with the substrate P.
上述のようないくつかの処理装置を経て、一連のプロセスの最後の処理装置Unを通った基板Pは、ニップされた駆動ローラDR9を介して回収ロールFR2に巻き上げられる。その巻上げの際も、基板PのY軸方向(幅方向)の中心、あるいはY軸方向の基板端が、Y軸方向にばらつかないように、エッジポジションコントローラEPC3によって、駆動ローラDR9と回収ロールFR2のY軸方向の相対位置が逐次補正制御される。 The processing device U5 is, for example, a heating and drying device, and warms the substrate P transported from the processing device U4, and adjusts the moisture content of the substrate P wetted by the wet process to a predetermined value.
After passing through several processing apparatuses as described above, the substrate P that has passed through the final processing apparatus Un of the series of processes is wound up on the collection roll FR2 via the nipped drive roller DR9. Also during the winding, the drive roller DR9 and the recovery roll are driven by the edge position controller EPC3 so that the center of the substrate P in the Y-axis direction (width direction) or the substrate end in the Y-axis direction does not vary in the Y-axis direction. The relative position of the FR2 in the Y-axis direction is successively corrected and controlled.
また、基板Pは、フロート法などで製造された厚さ100μm程度の極薄ガラスの単層体であってもよい。基板Pは、この極薄ガラスに上記の樹脂フィルム、箔などを貼り合わせた積層体であってもよい。基板Pは、予め所定の前処理によって、その表面を改質して活性化したもの、あるいは、表面に精密パターニングのための微細な隔壁構造(凹凸構造)を形成したものでもよい。上記の厚さは一例であって、本発明はこれに限定されない。 The substrate P can be selected so that its thermal expansion coefficient is not significantly large so that the amount of deformation caused by heat in various processing steps can be substantially ignored. The thermal expansion coefficient may be set smaller than a threshold corresponding to the process temperature or the like, for example, by mixing an inorganic filler with a resin film. The inorganic filler may be, for example, titanium oxide, zinc oxide, alumina, silicon oxide or the like.
The substrate P may be a single layer of ultrathin glass having a thickness of about 100 μm manufactured by a float process or the like. The board | substrate P may be the laminated body which bonded together said resin film, foil, etc. to this ultra-thin glass. The substrate P may be a substrate whose surface has been modified and activated in advance by a predetermined pre-treatment, or a substrate having a fine partition structure (uneven structure) for precise patterning formed on the surface. The above thickness is an example, and the present invention is not limited to this.
基板Pの寸法は、例えば、幅方向(短尺となるY軸方向)の寸法が10cmから2m程度であり、長さ方向(長尺となるX軸方向)の寸法が10m以上である。上記の寸法は一例であって、本発明はこれに限定されない。基板Pの幅方向の寸法は、10cm以下、または2m以上であってもよい。基板Pの長さ方向の寸法は、10m未満であってもよい。 The device manufacturing system SYS of the present embodiment repeatedly or continuously executes various processes for manufacturing a device (such as a display panel) on the substrate P. The substrate P that has been subjected to various types of processing is divided (diced) for each device to form a plurality of devices.
As for the dimension of the substrate P, for example, the dimension in the width direction (short Y-axis direction) is about 10 cm to 2 m, and the dimension in the length direction (long X-axis direction) is 10 m or more. The above dimensions are examples, and the present invention is not limited thereto. The dimension in the width direction of the substrate P may be 10 cm or less, or 2 m or more. The dimension in the length direction of the substrate P may be less than 10 m.
基板Pの搬送経路において回転ドラムDPの前後には、ガイドローラー14aおよびガイドローラー14bが設けられている。ガイドローラー14aおよびガイドローラー14bは、基板Pが回転ドラムDPにたるみなく密着するように、基板Pの張力を調整する。 The outer peripheral surface DPa of the rotary drum DP is a support surface that supports the substrate P. The substrate P is transported so as to be wound around the rotating drum DP as the rotating drum DP rotates. Therefore, the projection region PR is curved along the outer peripheral surface DPa of the rotating drum DP on the substrate P being conveyed on the outer peripheral surface DPa of the rotating drum DP.
A
光源20は、例えば、g線、h線、i線等の輝線光を放射するランプ光源、レーザーダイオード(LD)あるいは発光ダイオード(LED)などの固体光源の少なくとも1つを含む。照明光学系21は、例えば、照明領域IRにおける照度を均一化するためのインテグレータ光学系などの照度均一化光学系を含む。 The illumination system IU generates the exposure light L2 corresponding to the pattern formed on the mask pattern M by illuminating the mask pattern M held on the rotating drum DM with the illumination light L1. The illumination system IU illuminates the illumination area IR with uniform brightness by Koehler illumination or the like. The illumination system IU includes, for example, a
The
マスクパターンMの周方向の各部は、回転ドラムDMが照明領域IRに対して回転することで、照明領域IRを順に通過する。マスクパターンMを通過(透過)した照明光L1は、露光光L2となる。マスクパターンMから出射した露光光L2は、投影系PLに入射する。 The mask pattern M in FIG. 2 is a transmissive type, and the illumination system IU irradiates the mask pattern M with illumination light L1 from the inside of the rotary drum DM. The rotating drum DM is formed in a cylindrical shape so that the illumination system IU can be accommodated therein. The illumination system IU is supported from the outside of the rotating drum DM so as not to rotate with respect to the outside of the rotating drum DM while the rotating drum DM is rotating.
Each part of the mask pattern M in the circumferential direction passes through the illumination region IR in turn as the rotary drum DM rotates relative to the illumination region IR. The illumination light L1 that has passed (transmitted) through the mask pattern M becomes exposure light L2. The exposure light L2 emitted from the mask pattern M is incident on the projection system PL.
そのため、投影系PLの投影領域PRは、中心面13から回転ドラムDPの周方向にずれた位置に配置される。投影領域PRの接平面PRaは、面22と非平行な関係になる。なお、投影領域PRの接平面PRaは、投影領域PRにおける任意の点(例えば、投影領域PRの中心)で投影領域PRに接する平面である。 The field of view (object plane) of the projection system PL is set to at least a part of the illumination area IR. A projection region PR (image plane) conjugate with the field of the projection system PL is arranged symmetrically with respect to the illumination region IR with respect to the
Therefore, the projection region PR of the projection system PL is arranged at a position shifted from the
第1投影光学系PL1と第2投影光学系PL2との間には、第1投影光学系PL1からの照明光L1を偏向して第2投影光学系PL2に向かわせるように、フィールドレンズ24が配置されている。フィールドレンズ24は、その一部が中間結像面23に配置されるように、中間結像面23の近傍に配置されている。 In the projection system PL, the optical path of the exposure light L2 in the second projection optical system PL2 is bent with respect to the optical path of the exposure light L2 in the first projection optical system PL1. For example, the first projection optical system PL1 and the second projection optical system PL2 are each configured as an axially symmetric optical system, and the
A
光学系30の横倍率をkとすると、縦倍率は横倍率の2乗(k2)に等しい。このため、軸外物点36は、光軸30aに垂直な方向において軸上像点39からkhだけ離れた位置であって、光軸30aに平行な方向において軸上像点39からk2αhだけ離れた位置(軸外像点38)に結像する。このことは、像面32と瞳面35とのなす角度βがkαになることを示す。
ここで、光学系30と光学的に等価な1枚のレンズを想定すると、このレンズから像面32までの距離は、物体面31からレンズまでの距離に像倍率kを乗算した値である。したがって、レンズの主面(瞳面35)を延長した平面と物体面31との交線は、レンズの主面(瞳面35)を延長した平面と像面32との交線と一致することになる。 An off-
If the horizontal magnification of the
Here, assuming a single lens optically equivalent to the
このような光学系30で第1投影光学系PL1を構成するには、第1投影光学系PL1の光軸40を中心面13に対して角度(θ-α)、すなわちθ×f2/(f1+f2)だけ傾ければよい。例えば、レンズ群33とレンズ群34とで焦点距離が等しい場合には、第1投影光学系PL1の光軸40が中心面13になす角度は、θ/2になる。 Here, it is assumed that the center of the visual field of the projection system PL shown in FIG. 2 is arranged at a position rotated from the
In order to configure the first projection optical system PL1 with such an
第1光学面A1から第10光学面A10のそれぞれは、レンズの表面である。第1光学面A1から第2光学面A2までの中心間距離は、このレンズの中心の厚みを示す。なお、第10光学面A10に対する「中心間距離」は、第10光学面A10から物体面41までの距離を示す。 The “curvature radius” of the nth optical surface An is positive when it is convex toward the
Each of the first optical surface A1 to the tenth optical surface A10 is a lens surface. The center-to-center distance from the first optical surface A1 to the second optical surface A2 indicates the thickness of the center of this lens. The “center distance” with respect to the tenth optical surface A10 indicates the distance from the tenth optical surface A10 to the
また、図4のレンズ群は、反射部材を含まない屈折系の光学系であるが、反射部材およびレンズを含む反射屈折系の光学系でもよいし、反射部材を含みレンズを含まない反射系の光学系でもよい。レンズ群34は、レンズ群33と違う構成でもよい。例えば、レンズ群34の焦点距離f2がレンズ群33の焦点距離f1と異なっていてもよい(図3参照)。 The
4 is a refractive optical system that does not include a reflective member, but may be a catadioptric optical system that includes a reflective member and a lens, or a reflective system that includes a reflective member and does not include a lens. An optical system may be used. The
換言すると、照明領域IRの接平面IRaに垂直な方向は、回転ドラムDMの回転中心軸AX1に垂直な平面(XZ平面)において回転中心軸AX1を通る方向(回転ドラムDMの径方向)である。照明系IUは、回転中心軸AX1とずれた位置から照明光L1を照明領域IRに照射する。 Incidentally, the illumination system IU shown in FIG. 2 is arranged so that the direction in which the illumination light L1 is emitted (exit axis IUa) is substantially coaxial with the
In other words, the direction perpendicular to the tangential plane IRa of the illumination area IR is a direction (radial direction of the rotating drum DM) passing through the rotation center axis AX1 in a plane (XZ plane) perpendicular to the rotation center axis AX1 of the rotation drum DM. . The illumination system IU irradiates the illumination region IR with the illumination light L1 from a position shifted from the rotation center axis AX1.
また、第2投影光学系PL2は、中間像IMの接平面IMaと基板P上の投影領域PRの接平面PRaとをシャインプルーフの条件を満たして共役関係にする。そのため、露光装置EXは、照明領域IRにおけるマスクパターンMの像を精度よく基板Pに投影露光することができる。
このように、露光装置EXは、照明領域IRを中心面13からずれた位置に配置できるので、照明系IUおよび投影系PLの配置の自由度が高くなり、例えばマルチレンズ型の露光装置などに適用しつつ露光精度を確保することができる。 In the exposure apparatus EX configured as described above, the first projection optical system PL1 has a conjugate relationship between the tangent plane IMa of the intermediate image IM and the tangent plane IRa of the illumination area IR on the mask pattern M satisfying the Scheimpflug condition. To. Therefore, the exposure apparatus EX can accurately project and expose the image of the mask pattern M in the illumination area IR onto the substrate P even when the illumination area IR is set at a position shifted from the
In addition, the second projection optical system PL2 has a conjugate relationship between the tangent plane IMa of the intermediate image IM and the tangent plane PRa of the projection region PR on the substrate P by satisfying the Scheinproof condition. Therefore, the exposure apparatus EX can project and expose the image of the mask pattern M in the illumination area IR onto the substrate P with high accuracy.
As described above, since the exposure apparatus EX can be arranged at a position shifted from the
例えば、投影系PLは、照明領域IRの中心での接平面IRaに平行であって、照明領域IR上の任意の点を通る平面を上記の近似平面に用いて、シャインプルーフの条件を満たすように構成されていてもよい。また、例えば、投影系PLは、照明領域IR上の任意の点を通る平面であって、その傾きが照明領域IRの周方向のそれぞれの端での接平面の傾き間に収まる平面を上記の近似平面に用いて、シャインプルーフの条件を満たすように構成されていてもよい。
このような近似平面の定義は、中間結像面23、投影領域IRなどの湾曲面にも適用できるし、以下の実施形態においても適用できる。 In the present embodiment, the shine proof condition has been described using a tangent plane as a plane corresponding to a curved surface such as the illumination region IR (hereinafter referred to as an approximate plane). Can be appropriately selected so that the defocus due to the error when approximated by is less than the depth of focus.
For example, the projection system PL uses the plane parallel to the tangent plane IRa at the center of the illumination area IR and passing through any point on the illumination area IR as the above approximate plane so as to satisfy the Scheinproof condition. It may be configured. In addition, for example, the projection system PL is a plane that passes through an arbitrary point on the illumination area IR, and a plane whose inclination falls within the inclination of the tangential plane at each end in the circumferential direction of the illumination area IR. It may be configured to use the approximate plane and satisfy the Scheimpflug condition.
Such definition of the approximate plane can be applied to curved surfaces such as the
次に、第2実施形態について説明する。本実施形態において、上記の実施形態と同様の構成については、同じ符号を付してその説明を簡略化あるいは省略することがある。 [Second Embodiment]
Next, a second embodiment will be described. In the present embodiment, the same components as those in the above embodiment are denoted by the same reference numerals, and the description thereof may be simplified or omitted.
ここで、回転ドラムDMの半径をRとすると、フィールドレンズ24の焦点距離は、R×(f1+f2)/(2×f1)となり、第1投影光学系PL1の視野(照明領域IR)の位置によらない。そのため、フィールドレンズ24は、例えばY軸方向における焦点距離の分布が一様なシリンドリカルレンズによって構成できる。 2 and 3, the angle at which the
Here, if the radius of the rotating drum DM is R, the focal length of the
フィールドレンズ24の焦点距離は、レンズ群33の焦点距離f1とレンズ群34の焦点距離f2が同じである場合に、回転ドラムDMの半径(R)と実質的に同じになる。したがって、例えば、回転ドラムDMの半径(R)を約250mmとすると、フィールドレンズ24の曲率半径は、例えば約339mmになる。 The
The focal length of the
開口50は、第1投影モジュールPMaに対応する開口50aと第2投影モジュールPMbに対応する開口50bとでX軸方向の位置がずれるように、配置されている。本実施形態では、投影モジュールPMがY軸方向に一定のピッチで並んでいることに対応して、開口50は、Y軸方向に一定のピッチdyで並んでいる。 The
The
開口50aと開口50bは、走査方向から見たときに、上底と下底のうち短い方の辺が開口50aと開口50bとで重ならないように配置され、台形の斜辺(脚)が開口50aと開口50bとで重なるように配置されている。 The
When viewed from the scanning direction, the
このような条件で、各投影モジュールPMは、例えば、レンズの最大径が約22mm程度、全長が約180mm程度、視野の直径νφが約14.2mm程度になる。 FIG. 9 is a plan view showing an example of the
Under such conditions, each projection module PM has, for example, a maximum lens diameter of about 22 mm, a total length of about 180 mm, and a field diameter νφ of about 14.2 mm.
なお、投影モジュールPMの数は、適宜選択でき、第1実施形態のように1つでもよいし、第2実施形態のように2以上であってもよい。 In the exposure apparatus EX configured as described above, since the plurality of projection modules PM are arranged in the non-scanning direction, the processing range in the non-scanning direction can be expanded. For example, a large-sized substrate for a large device, It can be exposed to a large substrate for chamfering. Further, since the exposure apparatus EX has the same configuration in the first projection module PM and the second projection module PM, for example, the design cost and the manufacturing cost of the apparatus can be reduced.
The number of projection modules PM can be selected as appropriate, and may be one as in the first embodiment, or may be two or more as in the second embodiment.
また、フィールドレンズ24は、複数の第1投影モジュールPMaで共通化され、複数の第2投影モジュールPMbで共通化されているので、部品の数を減らすことができ、例えば位置合わせのコストを減らすことなどができる。 In the exposure apparatus EX, since the
Further, since the
また、第2投影光学系PL2は、拡大系の光学系と縮小系の光学系のいずれでもよく、第1投影光学系PL1と倍率が異なっていてもよい。例えば、第1投影光学系PL1が拡大系の光学系であって、第2投影光学系PL2が縮小系の光学系であってもよく、この場合に、拡大された中間像IMの位置に視野絞りを設けることで、投影領域PRの範囲を精度よく規定することができる。
また、投影系PLは、等倍系の光学系、拡大系の光学系、縮小系の光学系のいずれでもよい。 In the above-described embodiment, the first projection optical system PL1 is an equal magnification optical system, but may be either an enlargement optical system or a reduction optical system.
The second projection optical system PL2 may be either an enlargement optical system or a reduction optical system, and may have a magnification different from that of the first projection optical system PL1. For example, the first projection optical system PL1 may be an enlargement optical system and the second projection optical system PL2 may be a reduction optical system. In this case, the field of view is at the position of the enlarged intermediate image IM. By providing the stop, the range of the projection region PR can be accurately defined.
Further, the projection system PL may be any of an equal magnification optical system, an enlargement optical system, and a reduction optical system.
次に、第3実施形態について説明する。本実施形態において、上記の実施形態と同様の構成については、同じ符号を付してその説明を簡略化あるいは省略することがある。図10は、本実施形態による露光装置EXを概略して示す図であり、第2投影光学系PL2などの図示が省略されている。図10の露光装置EXは、照明系IUの構成が上述の実施形態と異なる。 [Third Embodiment]
Next, a third embodiment will be described. In the present embodiment, the same components as those in the above embodiment are denoted by the same reference numerals, and the description thereof may be simplified or omitted. FIG. 10 is a view schematically showing the exposure apparatus EX according to the present embodiment, and illustration of the second projection optical system PL2 and the like is omitted. The exposure apparatus EX of FIG. 10 differs from the above-described embodiment in the configuration of the illumination system IU.
シリンドリカルレンズ143の焦点距離fiは、導光ロッド51の中心線からシリンドリカルレンズ143までの距離をb(図10参照)とすると、下記の式(1)で表される。
fi=b(f2×R+f1×b)/(f2×R) ・・・式(1) The
The focal length fi of the
fi = b (f2 × R + f1 × b) / (f2 × R) (1)
表2に、各光学面の曲率半径および寸法を、走査方向と非走査方向のそれぞれについて記載する。表2の「中心間距離」は、光学面の中心から次の光学面の中心までの距離を示す。例えば面番号11に対応する「中心間距離」は、第11光学面A11の中心から第12光学面A12の中心までの距離を示し、レンズ53aの中心の厚みに相当する。
なお、面番号16に対応する「中心間距離」は、第16光学面A16の中心から照明領域IR(マスクパターンM)の中心までの距離を示す。 Hereinafter, an optical surface whose surface number is n in Table 2 is represented by an nth optical surface An. The eleventh optical surface A11 and the twelfth optical surface A12 are surfaces of the
Table 2 shows the radius of curvature and dimensions of each optical surface in each of the scanning direction and the non-scanning direction. “Distance between centers” in Table 2 indicates the distance from the center of the optical surface to the center of the next optical surface. For example, the “center distance” corresponding to the
The “center distance” corresponding to the
なお、光源像54は、例えば、導光ロッド51の中心線上あるいはその近傍に形成される。 The
The
このような条件下で、表2の例に対応するコンデンサレンズ144は、例えば、シリンドリカルレンズ143から約9mmの位置に配置される。レンズ53aおよびレンズ53bからなるレンズ群は、収差補正のため複数のレンズで構成され、その合成焦点距離は、例えば走査方向で約197.41mm、非走査方向で約130.77mmである。そして、コンデンサレンズ144とシリンドリカルレンズ143を合成したときの走査方向(XZ面)における焦点距離は、例えば47.86mmとなる。
なお、上述したようなコンデンサレンズ144の形状および寸法は、一例であり、適宜変更できることは言うまでもない。 In the illumination system IU, for example, the
Under such conditions, the
Needless to say, the shape and dimensions of the
本実施形態では、照明領域IRに入射する際の照明光L1の広がりが等方的になるように、導光ロッド51の切欠部52a(図10)は、例えば楕円状に形成され、走査方向に対応する方向の寸法(Y軸周りの周長)と、非走査方向に対応する方向の寸法(Y軸方向の幅)とが異なっている。 By the way, the magnification with which the
In the present embodiment, the
また、光源が回転ドラムDMの内部に配置されており、導光ロッド51の入射部は、回転ドラムDMの内部に設けられていてもよい。 In addition, the incident part of the
Further, the light source may be disposed inside the rotating drum DM, and the incident portion of the
また、光源がY軸方向の両端部に設けられており、両端部のそれぞれに導光ロッド51の入射部が設けられていてもよい。 Further, the number of incident portions of the
Moreover, the light source may be provided at both ends in the Y-axis direction, and the incident portion of the
次に、第4実施形態について説明する。本実施形態において、上記の実施形態と同様の構成については、同じ符号を付してその説明を簡略化あるいは省略することがある。図13は本実施形態による露光装置EXを概略して示す図である。図14は、投影領域PRの配置例を示す平面図である。 [Fourth Embodiment]
Next, a fourth embodiment will be described. In the present embodiment, the same components as those in the above embodiment are denoted by the same reference numerals, and the description thereof may be simplified or omitted. FIG. 13 schematically shows the exposure apparatus EX according to the present embodiment. FIG. 14 is a plan view showing an arrangement example of the projection regions PR.
次に、第5実施形態について説明する。本実施形態において、上記の実施形態と同様の構成については、同じ符号を付してその説明を簡略化あるいは省略することがある。図15は、本実施形態による露光装置EXを概略して示す図である。 [Fifth Embodiment]
Next, a fifth embodiment will be described. In the present embodiment, the same components as those in the above embodiment are denoted by the same reference numerals, and the description thereof may be simplified or omitted. FIG. 15 is a view schematically showing the exposure apparatus EX according to the present embodiment.
本実施形態では、非走査方向から見て4箇所に投影モジュールPMが配置されており、フィールドレンズ24は、4箇所の投影モジュールPMにわたって設けられている。 In the exposure apparatus EX of FIG. 15, a plurality of projection modules PM are arranged in the scanning direction (X-axis direction) when viewed from the non-scanning direction (Y-axis direction), and the lens array extends across the optical path of the plurality of projection modules PM. Has been placed. For example, the
In the present embodiment, the projection modules PM are arranged at four locations when viewed from the non-scanning direction, and the
例えば、図15の第1投影モジュールPMaは、Y軸方向に複数配列されており、レンズアレイ55は、複数の第1投影モジュールPMの光路にまたがって設けられており、複数の第1投影モジュールPMのレンズ要素が配列されていてもよい。 In the present embodiment, the
For example, a plurality of first projection modules PMa in FIG. 15 are arranged in the Y-axis direction, and the
また、投影モジュールPMに、レンズ以外の開口絞りなどの光学部材を設ける場合に、この光学部材を複数の投影モジュールPMの光路にわたって配置することで、複数の投影モジュールPMで共通化してもよい。 FIG. 15 shows an example in which the lens elements of the projection module PM are respectively provided in the
Further, when an optical member such as an aperture stop other than the lens is provided in the projection module PM, the optical member may be shared by the plurality of projection modules PM by arranging the optical member over the optical path of the plurality of projection modules PM.
次に、第6実施形態について説明する。本実施形態において、上記の実施形態と同様の構成については、同じ符号を付してその説明を簡略化あるいは省略することがある。図16は、本実施形態による露光装置EXを概略して示す図である。 [Sixth Embodiment]
Next, a sixth embodiment will be described. In the present embodiment, the same components as those in the above embodiment may be denoted by the same reference numerals, and the description thereof may be simplified or omitted. FIG. 16 is a view schematically showing the exposure apparatus EX according to the present embodiment.
照明光L1によって照明されているマスクパターンMで発生した反射光束(露光光L2)は、1/4波長板60を通ることでPBS膜59aに対するP偏向になり、PBS膜59aを通って投影系PLに入射する。投影系PLは、上述した実施形態と同様に、第1投影光学系PL1が中間像IMを形成し、第2投影光学系PL2が中間像IMを基板Pに投影する。
PBSプリズム59および光源装置57は、例えば、マスクパターンMで反射回折した露光光L2の進行方向が第1投影光学系PL1の光軸40と実質的に平行(同軸)になるように、配置されている。 The
The reflected light beam (exposure light L2) generated by the mask pattern M illuminated by the illumination light L1 passes through the quarter-
For example, the
次に、第7実施形態について説明する。本実施形態において、上記の実施形態と同様の構成については、同じ符号を付してその説明を簡略化あるいは省略することがある。図17は、本実施形態による露光装置EXを概略して示す図である。 [Seventh Embodiment]
Next, a seventh embodiment will be described. In the present embodiment, the same components as those in the above embodiment are denoted by the same reference numerals, and the description thereof may be simplified or omitted. FIG. 17 is a view schematically showing the exposure apparatus EX according to the present embodiment.
本実施形態では、基板Pのうち投影領域PRを通る部分を支持する支持部材62が設けられている。支持部材62は、例えばガスを吹出す吹出口と、吹出口からのガスを吸引する吸引口とが配列されたエアパッド面62aを有する。支持部材62は、投影領域PRにおいて基板Pを平面状に保つように、エアパッド面62aで基板Pを非接触に支持する。 The exposure apparatus EX described in FIG. 2 and the like performs projection exposure on the curved projection area PR, but the exposure apparatus EX in FIG. 17 performs projection exposure on the planar projection area PR. In FIG. 17, the substrate P is stretched over and supported by a
In the present embodiment, a
また、搬送ローラ61bと搬送ローラ61cとの間の搬送経路は、中心面13に関して、搬送ローラ61aと搬送ローラ61bとの間の搬送経路と非対称でもよい。この場合には、追加する投影モジュールPMの光軸の傾き、X軸方向の位置などは、投影領域PRの傾きに応じて適宜設定できる。 In FIG. 17, the substrate P is stretched between the
Further, the conveyance path between the
また、上述の実施形態において、マスクパターンMが円筒面状に湾曲した状態で保持されて露光処理が行われる構成を説明したが、マスクパターンMが平面状に保持されており、基板Pが円筒面状に湾曲した状態で支持されて露光処理される構成でもよい。この構成において、第2投影光学系PL2は、中間像IMの接平面IMaと投影領域PRの接平面PRaとをシャインプルーフの条件を満たして共役関係にすることで、第1投影光学系PL1が形成した中間像を精度よく投影することができる。 As described above, the exposure apparatus EX may be configured to expose the substrate P supported in a planar shape.
Further, in the above-described embodiment, the configuration in which the mask pattern M is held in a state of being curved into a cylindrical surface and the exposure process is performed has been described. However, the mask pattern M is held in a planar shape, and the substrate P is cylindrical. A configuration in which exposure processing is performed while being supported in a curved state in a planar shape may be used. In this configuration, the second projection optical system PL2 satisfies the Shine proof condition between the tangent plane IMa of the intermediate image IM and the tangent plane PRa of the projection region PR so that the first projection optical system PL1 has a conjugate relationship. The formed intermediate image can be projected with high accuracy.
次に、デバイス製造方法について説明する。図18は、本実施形態のデバイス製造方法を示すフローチャートである。 [Device manufacturing method]
Next, a device manufacturing method will be described. FIG. 18 is a flowchart showing the device manufacturing method of the present embodiment.
レジストパターンの形成には、レジスト膜を基板表面に一様に形成する工程、上記の各実施形態に従って、マスクパターンMを経由してパターン化された露光光L2で基板のレジスト膜を露光する工程、その露光によってマスクパターンの潜像が形成されたレジスト膜を現像する工程、が実施される。 Next, the prepared substrate is put into a roll-type or patch-type production line, and the TFT backplane layers such as electrodes, wiring, insulating film, and semiconductor film constituting the device on the substrate, and organic EL light emission that becomes the pixel portion A layer is formed (step 204). Step 204 typically includes a step of forming a resist pattern on a film on the substrate and a step of etching the film using the resist pattern as a mask.
For forming the resist pattern, a step of uniformly forming a resist film on the substrate surface, and a step of exposing the resist film on the substrate with the exposure light L2 patterned via the mask pattern M according to each of the above embodiments. Then, a step of developing the resist film on which the latent image of the mask pattern is formed by the exposure is performed.
Claims (16)
- マスクパターンに形成されたパターンを基板に投影露光する処理装置であって、
前記マスクパターンを湾曲した状態で保持するマスク保持部材と、
前記基板を支持する基板支持部材と、
前記マスクパターンの一部を照明する照明系と、
前記照明系によって前記マスクパターン上に形成される照明領域に対応した中間像を形成すると共に、前記中間像の接平面と前記マスクパターン上の照明領域の接平面とをシャインプルーフの条件を満たして共役関係にする中間像形成光学系と、
前記中間像を、前記基板支持部材に支持されている基板上の投影領域に投影する投影光学系と、を備える処理装置。 A processing apparatus for projecting and exposing a pattern formed on a mask pattern onto a substrate,
A mask holding member for holding the mask pattern in a curved state;
A substrate support member for supporting the substrate;
An illumination system for illuminating a part of the mask pattern;
An intermediate image corresponding to an illumination area formed on the mask pattern is formed by the illumination system, and a tangential plane of the intermediate image and a tangential plane of the illumination area on the mask pattern satisfy a Scheinproof condition. An intermediate image forming optical system in a conjugate relationship;
And a projection optical system that projects the intermediate image onto a projection area on the substrate supported by the substrate support member. - 前記投影光学系は、前記中間像の前記接平面と前記投影領域の接平面とをシャインプルーフの条件を満たして共役関係にする
請求項1記載の処理装置。 The processing apparatus according to claim 1, wherein the projection optical system has a conjugate relationship between the tangent plane of the intermediate image and the tangent plane of the projection region by satisfying a Scheinproof condition. - 前記基板支持部材は、前記基板を円筒面状に湾曲した状態で支持する支持面を備え、
前記投影領域は、前記基板支持部材の支持面に沿って湾曲する
請求項2記載の処理装置。 The substrate support member includes a support surface that supports the substrate in a state of being curved into a cylindrical surface,
The processing apparatus according to claim 2, wherein the projection region is curved along a support surface of the substrate support member. - 前記照明系は、前記照明領域の前記接平面に対して非垂直な方向から前記照明領域を照明する
請求項1~3のいずれか一項記載の処理装置。 The processing apparatus according to any one of claims 1 to 3, wherein the illumination system illuminates the illumination area from a direction non-perpendicular to the tangential plane of the illumination area. - 前記マスクパターンは、透過型のマスクパターンであって、
前記照明系は、前記マスク保持部材の内側に配置されている
請求項4記載の処理装置。 The mask pattern is a transmissive mask pattern,
The processing apparatus according to claim 4, wherein the illumination system is disposed inside the mask holding member. - 前記マスク保持部材は、前記マスクパターンを、中心線の周りで回転対称な円筒面状に湾曲した状態で保持し、
前記円筒面の中心線に垂直な面において、前記マスクパターンのうち前記基板に最も近い近接点を通る前記円筒面の径方向は、前記中心線に関して前記近接点の反対側で、前記照明系からの光の出射方向と交わる
請求項5記載の処理装置。 The mask holding member holds the mask pattern in a state of being curved into a cylindrical surface that is rotationally symmetric around a center line,
In a plane perpendicular to the center line of the cylindrical surface, the radial direction of the cylindrical surface passing through a proximity point closest to the substrate in the mask pattern is opposite to the proximity point with respect to the center line, and from the illumination system. The processing apparatus according to claim 5, wherein the processing apparatus intersects with the light emission direction. - マスクパターンに形成されているパターンを基板に投影露光する処理装置であって、
前記マスクパターンを保持するマスク保持部材と、
前記基板を湾曲した状態で支持する基板支持部材と、
前記マスクパターンの一部を照明する照明系と、
前記照明系によって前記マスクパターン上に形成される照明領域に対応した中間像を形成する中間像形成光学系と、
前記中間像を、前記基板支持部材に支持されている基板上の投影領域に投影すると共に、前記中間像の接平面と前記投影領域の接平面とをシャインプルーフの条件を満たして共役関係にする投影光学系と、を備える処理装置。 A processing apparatus for projecting and exposing a pattern formed on a mask pattern onto a substrate,
A mask holding member for holding the mask pattern;
A substrate support member for supporting the substrate in a curved state;
An illumination system for illuminating a part of the mask pattern;
An intermediate image forming optical system for forming an intermediate image corresponding to an illumination area formed on the mask pattern by the illumination system;
The intermediate image is projected onto a projection area on the substrate supported by the substrate support member, and the tangent plane of the intermediate image and the tangent plane of the projection area satisfy a Scheinproof condition and have a conjugate relationship. A projection optical system. - 前記中間像が形成される位置またはその近傍に配置されたフィールドレンズを備える
請求項1~7のいずれか一項記載の処理装置。 The processing apparatus according to claim 1, further comprising a field lens disposed at or near a position where the intermediate image is formed. - 前記フィールドレンズは、前記中間像形成光学系からの光を偏向して前記投影光学系に向かわせる
請求項8記載の処理装置。 The processing device according to claim 8, wherein the field lens deflects light from the intermediate image forming optical system and directs the light to the projection optical system. - 前記フィールドレンズは、
前記中間像の接平面に関して前記照明領域と同じ側に配置された第1光学部材と、
前記中間像の接平面に関して前記照明領域と反対側に配置された第2光学部材と、
前記第1光学部材と前記第2光学部材とに挟まれた絞り部と、を備える
請求項8または9記載の処理装置。 The field lens is
A first optical member disposed on the same side as the illumination area with respect to the tangential plane of the intermediate image;
A second optical member disposed on the opposite side of the illumination area with respect to the tangent plane of the intermediate image;
The processing apparatus according to claim 8, further comprising: a diaphragm portion sandwiched between the first optical member and the second optical member. - 複数の前記中間像形成光学系と、複数の前記投影光学系とを含む、請求項1~10のいずれか一項記載の処理装置であって、
前記基板と前記マスクパターンとを移動させる移動装置と、
第1の中間像形成光学系および第1の投影光学系を含む第1投影モジュールと、
前記移動装置による移動方向に関して前記第1投影モジュールと異なる位置に配置され、第2の中間像形成光学系および第2の投影光学系を含む第2投影モジュールと、をさらに備え、
前記移動装置による移動に伴って前記第1投影モジュールの投影領域を通る前記基板上の領域の一部と、前記移動装置による移動に伴って前記第2投影モジュールの投影領域を通る前記基板上の領域の一部とが重なるように、前記第1投影モジュールと前記第2投影モジュールは、前記移動装置による前記移動方向に垂直な方向で異なる位置に配置されている。 The processing apparatus according to any one of claims 1 to 10, comprising a plurality of the intermediate image forming optical systems and a plurality of the projection optical systems,
A moving device for moving the substrate and the mask pattern;
A first projection module including a first intermediate image forming optical system and a first projection optical system;
A second projection module that is disposed at a position different from the first projection module with respect to the moving direction of the moving device and includes a second intermediate image forming optical system and a second projection optical system;
A part of the area on the substrate that passes through the projection area of the first projection module according to the movement by the moving device, and a part on the substrate that passes through the projection area of the second projection module according to the movement by the moving apparatus. The first projection module and the second projection module are arranged at different positions in a direction perpendicular to the moving direction by the moving device so that a part of the region overlaps. - 前記第1投影モジュールの結像面と前記第2投影モジュールの結像面とにわたって設けられたフィールドレンズを備える
請求項11記載の処理装置。 The processing apparatus according to claim 11, further comprising a field lens provided across the imaging plane of the first projection module and the imaging plane of the second projection module. - 前記第1投影モジュールは、前記移動装置による前記移動方向に垂直な前記方向に複数配置されており、
前記複数の第1投影モジュールの結像面にわたって設けられたフィールドレンズを備える
請求項11または12記載の処理装置。 A plurality of the first projection modules are arranged in the direction perpendicular to the moving direction by the moving device,
The processing apparatus of Claim 11 or 12 provided with the field lens provided over the imaging surface of these 1st projection modules. - 前記第1投影モジュールの光路と前記第2投影モジュールの光路とにわたって配置され、
前記第1投影モジュールのレンズ要素と前記第2投影モジュールのレンズ要素とが配列されたレンズアレイを備える
請求項11~13のいずれか一項記載の処理装置。 Arranged across the optical path of the first projection module and the optical path of the second projection module;
The processing apparatus according to any one of claims 11 to 13, further comprising a lens array in which lens elements of the first projection module and lens elements of the second projection module are arranged. - 前記第1投影モジュールは、前記移動装置による前記移動方向に垂直な前記方向に複数配置されており、
前記複数の前記第1投影モジュールの光路にわたって配置され、前記複数の前記第1投影モジュールのレンズ要素が配置されたレンズアレイを備える
請求項11~14のいずれか一項記載の処理装置。 A plurality of the first projection modules are arranged in the direction perpendicular to the moving direction by the moving device,
The processing apparatus according to any one of claims 11 to 14, further comprising a lens array that is disposed over an optical path of the plurality of first projection modules and in which lens elements of the plurality of first projection modules are disposed. - 感応層を有する基板とマスクパターンとを移動させながら、請求項1から15のいずれか一項記載に処理装置によって、前記マスクパターンに形成されているパターンを前記基板に投影露光することと、
前記投影露光された前記基板の前記感応層の変化を利用して後続の処理を実施することと、を含むデバイス製造方法。 Projecting and exposing the pattern formed on the mask pattern onto the substrate by the processing apparatus according to any one of claims 1 to 15, while moving the substrate having the sensitive layer and the mask pattern;
Performing a subsequent process using a change in the sensitive layer of the projection-exposed substrate.
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