WO2014014181A1 - Method for inspecting and repairing substrate - Google Patents

Method for inspecting and repairing substrate Download PDF

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Publication number
WO2014014181A1
WO2014014181A1 PCT/KR2013/002033 KR2013002033W WO2014014181A1 WO 2014014181 A1 WO2014014181 A1 WO 2014014181A1 KR 2013002033 W KR2013002033 W KR 2013002033W WO 2014014181 A1 WO2014014181 A1 WO 2014014181A1
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Prior art keywords
inspection
substrate
pattern
pattern defect
defect
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PCT/KR2013/002033
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French (fr)
Korean (ko)
Inventor
임쌍근
강민구
송준호
이현민
한철희
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(주)인텍플러스
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Publication of WO2014014181A1 publication Critical patent/WO2014014181A1/en

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • G01N21/95684Patterns showing highly reflecting parts, e.g. metallic elements
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • G01N2021/95638Inspecting patterns on the surface of objects for PCB's
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • G01N2021/95638Inspecting patterns on the surface of objects for PCB's
    • G01N2021/95661Inspecting patterns on the surface of objects for PCB's for leads, e.g. position, curvature
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136254Checking; Testing

Definitions

  • the present invention relates to a method for inspecting and repairing a substrate, and more particularly, to detect a pattern defect of a substrate based on an image obtained by scanning a surface of the substrate, and to determine whether there is a short circuit or disconnection of a detected defective part of the substrate.
  • the present invention relates to a substrate inspection and repair method for automatically restoring a bad pattern as a work signal is output.
  • a liquid crystal display device uses a substrate on which a metal film and an insulating film are formed by using a lithography process on a glass substrate, and the like, by using a liquid crystal and a substrate on which a plurality of thin film patterns are formed. It can be said that the device converts the visible visual signal.
  • a pattern device that performs a process such as etching is subjected to a process of checking whether a desired thin film is patterned into a desired shape.
  • an apparatus for enlarging the surface of the glass substrate may be needed so that the inspector may judge it from the perspective of the inspector.
  • an apparatus for enlarging a substrate corresponding to each pixel is needed to check whether a thin film pantone is defective for each pixel. Do.
  • the equipment used allows for the enlargement of pixels using lenses and mirrors for defect inspection.
  • Commonly used pixel defect measurement equipment includes a table that can fix a substrate on which a thin film pattern is formed and move up, down, left, and right, and a thin film pattern formed on the substrate on the substrate.
  • An objective lens is formed which can be enlarged by projecting the light.
  • the objective lens may have a magnification of 10 to 50 times to enlarge the thin film pattern.
  • the image projected by the objective lens is changed through a mirror or the like formed on the lens and finally transferred to a charge-coupled device camera.
  • the thin film pattern image of the substrate that passes through the path from the surface of the substrate to the CCD camera is taken by the CCD camera and displayed on the monitor.
  • the inspector examines the image projected on the monitor and checks the defect of the thin film pattern formed on the pixel. .
  • the present invention is to inspect the defective position through the pattern inspection of the substrate, and to determine whether the defective position is short or broken through the image comparison and output a signal to restore the corresponding corresponding to automatically restore the defective portion Its purpose is to provide a substrate inspection and repair method.
  • an inspection step for optically inspecting the pattern defect of the substrate, and transmitting the recorded information, and the information of the transmitted pattern defect And a readout step of determining whether the pattern defect is shorted or disconnected based on the detection result, and a restoration step of performing a repair operation by recognizing the short circuited or disconnected information about the pattern defect.
  • the inspection step the first inspection step for inspecting the surface of the substrate, the inspection by expanding the position where the pattern defect occurred in the first inspection step at a higher magnification than the first inspection step A second inspection step.
  • the restoring step includes: an optical path generation step of generating an optical path of a laser beam according to a short circuit or a disconnection result of the reading step, and irradiating a laser beam according to the generated optical path And a laser beam irradiation step.
  • the laser beam irradiation step is performed through a laser generator for outputting a laser beam and a reflector for changing an optical path to irradiate the laser beam onto a surface of the substrate where the pattern defect has occurred. do.
  • the restoration step further includes a re-inspection step of performing a re-inspection on the repaired substrate.
  • the substrate inspection and repair method it is possible to accurately determine the position of the defect pattern, analyze the identified defect pattern image to determine whether the short circuit or disconnection, and automatically laser work to restore the defect pattern to the normal pattern
  • the process time required for inspection and restoration can be significantly reduced.
  • FIG. 1 is a flow chart of a substrate inspection and repair method according to an embodiment of the present invention
  • FIG. 2 is a flow chart of a substrate inspection and repair method according to another embodiment of the present invention.
  • FIG. 3 is a conceptual diagram of a substrate inspection and repair apparatus for performing a substrate inspection and repair method according to an exemplary embodiment.
  • FIG. 1 is a flow chart of a substrate inspection and repair method according to an embodiment of the present invention
  • Figure 2 is a flow chart of a substrate inspection and repair method according to another embodiment of the present invention
  • Figure 3 is an embodiment of the present invention It is a conceptual diagram of a substrate inspection and repair apparatus for performing the substrate inspection and repair method according to.
  • a reading step (S200) of determining whether the pattern defect is short or disconnected based on the pattern defect and a restoration step (S300) of recognizing the short or disconnection information on the pattern defect and performing a repair operation.
  • the inspection step (S100) is an optical inspection of the pattern defects of the substrate 10, and transmits the recorded information, for the entire surface of the substrate 10 by various imaging means 50, including a camera, etc. Vision inspection is done.
  • the substrate 60 may be mounted on the stage 60, and a pattern is properly formed on the entire surface of the substrate 10 while the substrate 10 or the imaging means 50 mounted on the stage 60 moves. Check if it is.
  • a pattern defect of an area where a difference occurs from a standard image may be detected by comparing the image photographed by the inspection apparatus 50 with the standard image. If a pattern defect is detected in the inspection step S100 as described above, the position information of the detected area is output.
  • the reading step S200 determines whether the pattern defect is shorted or disconnected based on the information of the pattern defect transmitted in the inspection step S100.
  • Pattern defects occurring in the substrate 10 are classified into two types. The first is when the part to be disconnected is broken (disconnected) and the second is when the part to be disconnected is connected (shorted). In the first case, the broken part should be connected. In the second case, the connected part should be disconnected. In the past, such a task was directly instructed by the monitor. Therefore, there is a problem that the inspector must reside in front of the monitor, and the maintenance work is performed only on the inspector's instruction, which takes a long time, and the accuracy is also reduced.
  • the present invention analyzes the identified bad pattern image to automatically determine whether there is a short circuit or disconnection, and outputs a signal to perform a laser operation to restore the bad pattern to a normal pattern, significantly reducing the process time required for inspection and restoration. Can be.
  • the present invention since there is no need for a separate inspector to direct the laser work while monitoring the inspection result, it is possible to reduce manpower and inspection cost.
  • the restoration step (S300) is a step of performing a repair operation by recognizing short circuit or disconnection information on the pattern defect. If it is determined whether the short circuit or disconnection in the reading step (S200), it is to perform a repair operation accordingly. In other words, if the part to be disconnected is disconnected (disconnected), the disconnected part is connected. If the part to be disconnected is connected (shorted), the connected part is disconnected.
  • the re-inspection step (S400) for performing a re-inspection on the repaired substrate 10 in the restoration step (S300) may be further performed.
  • the re-inspection step (S400) is a step of performing a re-inspection on the repaired substrate 10, and the second inspection of the substrate 10, which is completed by the laser operation after the failure determination as described above, is automatically performed. There is an effect that can significantly reduce the occurrence.
  • the readout step S200 and the reconstruction step S300 may be additionally performed and retested again.
  • the inspection step (S100), the first inspection step (S110) for inspecting the surface of the substrate 10, and the position where the pattern defect occurred in the first inspection step (S110) It includes a secondary inspection step (S120) for inspecting by expanding at a higher magnification than the primary inspection step (S110).
  • the first inspection step (S110) is enlarged and inspected at a low magnification of ⁇ 5 to ⁇ 10
  • the second inspection step (S120) is a position at which the pattern defect occurred in the first inspection step (S110) ⁇ 50.
  • the inspection can be carried out at a high magnification of ⁇ ⁇ 100.
  • the entire surface of the substrate 10 is inspected at a relatively low magnification and a high magnification of ⁇ 5 to ⁇ 10.
  • the coordinate information of the region where the defect is detected is recorded, and then the coordinates are converted to a high magnification of ⁇ 50 to ⁇ 100. If the pattern defect is confirmed, it transmits the coordinate and the defective pattern image of the coordinate.
  • the entire inspection of the substrate 10 at a high magnification at high magnification, and inspection of the second precisely only in the region where the defect is detected can be expected to improve the inspection speed, and more accurate vision inspection can be performed.
  • the first inspection step (S110) is inspected by magnifying at a magnification of ⁇ 5 to ⁇ 10
  • the second inspection step (S120) is described as being inspected by expanding at a magnification of ⁇ 50 to ⁇ 100.
  • the present invention is not limited thereto, and various embodiments may occur in a range in which the second inspection step S120 is inspected at a higher magnification than the first inspection step S110.
  • the optical path generation step (S310) the optical path is generated to output the laser beam 20 at the coordinates of the substrate 10 on which the pattern defect is generated.
  • the laser beam irradiation step S320 the laser beam 20 reaches the substrate 10 on which the pattern defect is generated by irradiating the laser beam 20 according to the light path generated in the light path generation step S310. To make repair work.
  • the laser beam irradiation step (S320) is a laser generating unit 30 for outputting a laser beam 20, and the laser beam 20 the substrate 10 on which the pattern defect occurred It is carried out through the reflecting portion 40 for changing the light path to irradiate the surface of the.
  • the reflector 40 may include a plurality of reflecting mirrors, and a plurality of lenses for collecting the laser beam 20 or generating parallel light may be additionally disposed.
  • the laser generator 30 or the reflector 40 may be linearly moved and rotated so that the optical path of the laser beam 20 output from the laser generator 30 may be variously changed.
  • the reflector 40 changes the optical path through the information transmitted in the optical path generation step S310, so that the defective pattern of the substrate 10 is reduced.
  • the laser arrives at the generated coordinates and acts as a repair.

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Abstract

The present invention relates to a substrate inspection and repair method capable of inspection a defect location through a pattern inspection of a substrate, determining whether a wire has been short circuited or cut at the defect location through image comparison and outputting a signal restoration corresponding to the determined result is carried out such that a defect portion can be automatically restored, and the method comprises: an inspection step of optically inspecting a pattern defect of a substrate and transmitting recorded information on the pattern defect; a reading step of determining whether the pattern defect has a short circuited or cut wire on the basis of the transmitted information on the pattern defect; and a restoration step of performing repair work by recognizing short circuited or cut wire information on the pattern defect.

Description

기판 검사 및 리페어 방법Board inspection and repair method
본 발명은 기판 검사 및 리페어 방법에 관한 것으로, 더욱 상세하게는 기판의 표면을 스캔하여 얻은 이미지를 토대로 기판의 패턴불량을 검출하고, 검출된 기판의 불량부위의 단락 또는 단선여부를 판단하여 그에 맞는 작업신호를 출력함에 따라 자동적으로 불량패턴의 복원이 진행되도록 하는 기판 검사 및 리페어 방법에 관한 것이다.The present invention relates to a method for inspecting and repairing a substrate, and more particularly, to detect a pattern defect of a substrate based on an image obtained by scanning a surface of the substrate, and to determine whether there is a short circuit or disconnection of a detected defective part of the substrate. The present invention relates to a substrate inspection and repair method for automatically restoring a bad pattern as a work signal is output.
일반적으로 액정표시장치는 유리기판 등에 리소그래피(lithography)공정을 이용하여 금속막 및 절연막을 형성한 기판을 이용하는 것으로, 다수의 박막 패턴(thin film pattern)이 형성된 기판과 액정을 이용하여 전기적 신호를 사람이 볼 수 있는 시각적 신호로 바꾸어 주는 장치라 할 수 있다.In general, a liquid crystal display device uses a substrate on which a metal film and an insulating film are formed by using a lithography process on a glass substrate, and the like, by using a liquid crystal and a substrate on which a plurality of thin film patterns are formed. It can be said that the device converts the visible visual signal.
유리기판 등에 박막(thin film)을 형성하기 위해서는 증착(deposition), 식각(etching), 세정(rinsing & cleaning)과 같은 여러 작업을 요구하고 있다. 이들 공정 중 식각과 같은 공정을 진행하는 패턴(pattern)장비는 원하는 박막이 원하는 형상으로 패턴 되어 있는지를 검사하는 과정을 거치게 된다. 검사자가 유리기판상에 형성된 박막패턴(thin film pattern)을 검사하기 위해서는 유리기판 표면을 확대하여 검사자의 시각에 의해 판단할 수 있도록 하는 장치가 필요하다.In order to form a thin film on a glass substrate or the like, various operations such as deposition, etching, and rinsing & cleaning are required. Among these processes, a pattern device that performs a process such as etching is subjected to a process of checking whether a desired thin film is patterned into a desired shape. In order for an inspector to inspect a thin film pattern formed on a glass substrate, an apparatus for enlarging the surface of the glass substrate may be needed so that the inspector may judge it from the perspective of the inspector.
예를 들어, 액정표시장치의 어레이 기판(array substrate)에 다수개의 화소(pixel)가 형성되는 과정에서 화소별 박막 팬턴의 불량여부를 검사하기 위해서는 각각의 화소에 해당하는 기판을 확대하는 장치가 필요하다. 이에 이용되는 장비는 결함 검사를 위하여 렌즈(lens) 및 거울(mirror)을 이용하여 화소를 확대할 수 있게 해준다.For example, in the process of forming a plurality of pixels on an array substrate of a liquid crystal display device, an apparatus for enlarging a substrate corresponding to each pixel is needed to check whether a thin film pantone is defective for each pixel. Do. The equipment used allows for the enlargement of pixels using lenses and mirrors for defect inspection.
일반적으로 사용되는 화소(pixel)결함 측정장비는 박막패턴(thin film pattern)이 형성되어있는 기판을 고정하고 상하좌우로 움직일 수 있게 되어 있는 테이블을 포함하고 있으며, 기판의 상부에는 기판에 형성된 박막패턴을 투영하여 확대할 수 있는 대물렌즈가 형성되어 있다. 상기 대물렌즈는 박막패턴을 확대할 수 있도록 10배 내지 50배의 배율을 구비하게 된다. 상기 대물렌즈에 의해 투영된 영상(image)은 렌즈상부에 형성된 미러 등을 통해 경로가 변화하게 되고, 최종적으로는 CCD 카메라(charge-coupled device camera)에 전달되게 된다.Commonly used pixel defect measurement equipment includes a table that can fix a substrate on which a thin film pattern is formed and move up, down, left, and right, and a thin film pattern formed on the substrate on the substrate. An objective lens is formed which can be enlarged by projecting the light. The objective lens may have a magnification of 10 to 50 times to enlarge the thin film pattern. The image projected by the objective lens is changed through a mirror or the like formed on the lens and finally transferred to a charge-coupled device camera.
한편, 기판의 표면으로부터 CCD 카메라까지의 경로를 거친 기판의 박막패턴 영상은 CCD 카메라에 의해 촬영되어 모니터에서 나타나게 되는데, 검사자는 모니터에 투영된 영상을 보고 화소에 형성된 박막패턴의 불량을 검사하게 된다.On the other hand, the thin film pattern image of the substrate that passes through the path from the surface of the substrate to the CCD camera is taken by the CCD camera and displayed on the monitor. The inspector examines the image projected on the monitor and checks the defect of the thin film pattern formed on the pixel. .
하지만, 상기와 같은 검사방법의 경우, 검사자가 상주해야 하는 문제점과, 검사자의 지시에만 보수작업이 이루어져 시간 오래 걸리고, 정확도 저하되는 등의 문제점이 있었다.However, in the case of the inspection method as described above, there is a problem that the inspector must reside, and the maintenance work is performed only on the inspector's instruction, which takes a long time and degrades accuracy.
본 발명은 기판의 패턴검사를 통해 불량위치를 검사하고, 영상비교를 통해 불량위치의 단락 또는 단선여부를 판별한 뒤 그에 대응하는 복원이 이루어지도록 신호를 출력하여 자동적으로 불량부위가 복원될 수 있도록 하는 기판 검사 및 리페어 방법을 제공하는 데 그 목적이 있다. The present invention is to inspect the defective position through the pattern inspection of the substrate, and to determine whether the defective position is short or broken through the image comparison and output a signal to restore the corresponding corresponding to automatically restore the defective portion Its purpose is to provide a substrate inspection and repair method.
상기의 과제를 달성하기 위한 본 발명의 일 실시 예에 따른 기판 검사 및 리페어 방법에 따르면, 기판의 패턴결함을 광학적으로 검사하고, 이를 기록한 정보를 전송하는 검사단계와, 상기 전송된 패턴결함의 정보에 기초하여 상기 패턴결함의 단락 또는 단선 여부를 판별하는 판독단계와, 상기 패턴결함에 대한 단락 또는 단선 정보를 인식하여, 리페어 작업을 수행하는 복원단계를 포함한다.According to the substrate inspection and repair method according to an embodiment of the present invention for achieving the above object, an inspection step for optically inspecting the pattern defect of the substrate, and transmitting the recorded information, and the information of the transmitted pattern defect And a readout step of determining whether the pattern defect is shorted or disconnected based on the detection result, and a restoration step of performing a repair operation by recognizing the short circuited or disconnected information about the pattern defect.
본 발명의 일 실시 예에 따르면, 상기 검사단계는, 기판의 표면을 검사하는 1차 검사단계와, 상기 1차 검사단계에서 패턴결함이 발생된 위치를 상기 1차 검사단계보다 고배율로 확대하여 검사하는 2차 검사단계를 포함한다.According to one embodiment of the invention, the inspection step, the first inspection step for inspecting the surface of the substrate, the inspection by expanding the position where the pattern defect occurred in the first inspection step at a higher magnification than the first inspection step A second inspection step.
본 발명의 일 실시 예에 따르면, 상기 복원단계는, 상기 판독단계의 단락 또는 단선 결과에 따라 레이저 빔의 광경로를 생성하는 광경로 생성단계와, 상기 생성된 광경로에 따라 레이저 빔을 조사하는 레이저빔 조사단계를 포함한다.According to an embodiment of the present invention, the restoring step includes: an optical path generation step of generating an optical path of a laser beam according to a short circuit or a disconnection result of the reading step, and irradiating a laser beam according to the generated optical path And a laser beam irradiation step.
*본 발명의 일 실시 예에 따르면, 상기 레이저빔 조사단계는 레이저 빔을 출력하는 레이저 발생부와, 상기 레이저 빔을 상기 패턴결함이 발생한 기판의 표면에 조사하도록 광경로를 변화시키는 반사부를 통해 수행된다.According to an embodiment of the present invention, the laser beam irradiation step is performed through a laser generator for outputting a laser beam and a reflector for changing an optical path to irradiate the laser beam onto a surface of the substrate where the pattern defect has occurred. do.
본 발명의 일 실시 예에 따르면, 상기 복원단계에서 리페어가 완료된 기판에 대한 재검사를 수행하는 재검사단계를 더 포함한다.According to an embodiment of the present invention, the restoration step further includes a re-inspection step of performing a re-inspection on the repaired substrate.
본 발명에 따른 기판 검사 및 리페어 방법에 따르면, 불량패턴의 위치를 정확하게 파악할 수 있고, 파악된 불량패턴 이미지를 분석하여 단락 또는 단선 여부를 판별하고 자동적으로 레이저 작업이 이루어져 불량패턴이 정상패턴으로 복원되어 검사 및 복원에 필요한 공정시간이 대폭 감소될 수 있다.According to the substrate inspection and repair method according to the present invention, it is possible to accurately determine the position of the defect pattern, analyze the identified defect pattern image to determine whether the short circuit or disconnection, and automatically laser work to restore the defect pattern to the normal pattern Thus, the process time required for inspection and restoration can be significantly reduced.
또한, 검사 결과를 모니터링 하면서 레이저 작업을 지시하는 별도의 검사자가 필요치 않기 때문에 인력 및 검사비를 절감할 수 있는 효과가 있다.In addition, since there is no need for a separate inspector to direct the laser work while monitoring the inspection result, it is possible to reduce manpower and inspection cost.
또한, 불량판별 이후 레이저 작업에 의해 복원이 완료된 기판에 대한 2차 검사가 자동적으로 이루어져 불량발생을 현저히 낮출 수 있는 효과가 있다.In addition, since the secondary inspection is performed automatically on the substrate that is completed by the laser operation after the failure determination, there is an effect that can significantly reduce the occurrence of defects.
도 1은 본 발명의 일 실시 예에 따른 기판 검사 및 리페어 방법의 순서도,1 is a flow chart of a substrate inspection and repair method according to an embodiment of the present invention;
도 2는 본 발명의 다른 실시 예에 따른 기판 검사 및 리페어 방법의 순서도,2 is a flow chart of a substrate inspection and repair method according to another embodiment of the present invention;
도 3은 본 발명의 일 실시 예에 따른 기판 검사 및 리페어 방법을 수행하기 위한 기판 검사 및 리페어 장치의 개념도이다.3 is a conceptual diagram of a substrate inspection and repair apparatus for performing a substrate inspection and repair method according to an exemplary embodiment.
본 발명을 첨부된 도면을 참조하여 상세히 설명하면 다음과 같다. 여기서 동일한 구성에 대해서는 동일부호를 사용하며, 반복되는 설명, 본 발명의 요지를 불필요하게 흐릴 수 있는 공지 기능 및 구성에 대한 상세한 설명은 생략한다. 본 발명의 실시형태는 당업계에서 평균적인 지식을 가진 자에게 본 발명을 보다 완전하게 설명하기 위해서 제공되는 것이다. 따라서, 도면에서의 요소들의 형상 및 크기 등은 보다 명확한 설명을 위해 과장될 수 있다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. The same reference numerals are used for the same components, and repeated descriptions and detailed descriptions of well-known functions and configurations that may unnecessarily obscure the subject matter of the present invention will be omitted. Embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art. Accordingly, the shape and size of elements in the drawings may be exaggerated for clarity.
도 1은 본 발명의 일 실시 예에 따른 기판 검사 및 리페어 방법의 순서도이고, 도 2는 본 발명의 다른 실시 예에 따른 기판 검사 및 리페어 방법의 순서도이며, 도 3은 본 발명의 일 실시 예에 따른 기판 검사 및 리페어 방법을 수행하기 위한 기판 검사 및 리페어 장치의 개념도이다.1 is a flow chart of a substrate inspection and repair method according to an embodiment of the present invention, Figure 2 is a flow chart of a substrate inspection and repair method according to another embodiment of the present invention, Figure 3 is an embodiment of the present invention It is a conceptual diagram of a substrate inspection and repair apparatus for performing the substrate inspection and repair method according to.
도 1 내지 도 3을 참조하면, 검사 및 리페어 방법에 따르면, 기판(10)의 패턴결함을 광학적으로 검사하고, 이를 기록한 정보를 전송하는 검사단계(S100)와, 상기 전송된 패턴결함의 정보에 기초하여 상기 패턴결함의 단락 또는 단선 여부를 판별하는 판독단계(S200)와, 상기 패턴결함에 대한 단락 또는 단선 정보를 인식하여, 리페어 작업을 수행하는 복원단계(S300)를 포함한다.1 to 3, according to the inspection and repair method, an inspection step (S100) of optically inspecting a pattern defect of the substrate 10 and transmitting the recorded information, and the information on the transmitted pattern defect And a reading step (S200) of determining whether the pattern defect is short or disconnected based on the pattern defect, and a restoration step (S300) of recognizing the short or disconnection information on the pattern defect and performing a repair operation.
먼저, 검사단계(S100)는 기판(10)의 패턴결함을 광학적으로 검사하고, 이를 기록한 정보를 전송하는 단계로서, 카메라 등을 비롯한 각종 촬상수단(50)에 의해 기판(10) 전체 표면에 대한 비전검사가 이뤄진다. 상기 기판(60)은 스테이지(60)상에 탑재될 수 있으며, 스테이지(60)에 탑재된 기판(10) 또는 촬상수단(50)이 이동하면서 기판(10)의 전체 표면에 대해서 패턴이 제대로 형성되었는지 여부를 검사한다. 이때 패턴을 검사하는 방법으로는 검사장치(50)에서 촬영된 이미지를 표준 이미지와 비교하여 동일한지 여부에 따라 표준 이미지와 차이가 발생하는 영역의 패턴결함을 검출할 수 있다. 상기와 같은 검사단계(S100)에서 패턴결함이 검출되면, 검출된 영역의 위치정보를 출력한다.First, the inspection step (S100) is an optical inspection of the pattern defects of the substrate 10, and transmits the recorded information, for the entire surface of the substrate 10 by various imaging means 50, including a camera, etc. Vision inspection is done. The substrate 60 may be mounted on the stage 60, and a pattern is properly formed on the entire surface of the substrate 10 while the substrate 10 or the imaging means 50 mounted on the stage 60 moves. Check if it is. In this case, as a method of inspecting a pattern, a pattern defect of an area where a difference occurs from a standard image may be detected by comparing the image photographed by the inspection apparatus 50 with the standard image. If a pattern defect is detected in the inspection step S100 as described above, the position information of the detected area is output.
판독단계(S200)는 상기 검사단계(S100)에서 전송된 패턴결함의 정보에 기초하여 상기 패턴결함의 단락 또는 단선 여부를 판별한다. 상기 기판(10)에 발생하는 패턴결함은 크게 두 가지로 분류된다. 첫번째는 연결되어야 할 부분이 끊어져 있는 경우(단선)이고 두번째는 끊어져야 할 부분이 연결된 경우(단락)이다. 첫번째의 경우 끊어진 부분을 연결해줘야 하고, 두번째 경우에는 연결된 부분을 끊어주어야 한다. 기존에는 상기와 같은 작업을 감시자가 직접 지시하였다. 따라서, 검사자가 모니터 앞에 상주해야 하는 문제점과, 검사자의 지시에만 보수작업이 이루어져 시간 오래 걸리고, 정확도 또한 저하되는 등의 문제점이 있었다.The reading step S200 determines whether the pattern defect is shorted or disconnected based on the information of the pattern defect transmitted in the inspection step S100. Pattern defects occurring in the substrate 10 are classified into two types. The first is when the part to be disconnected is broken (disconnected) and the second is when the part to be disconnected is connected (shorted). In the first case, the broken part should be connected. In the second case, the connected part should be disconnected. In the past, such a task was directly instructed by the monitor. Therefore, there is a problem that the inspector must reside in front of the monitor, and the maintenance work is performed only on the inspector's instruction, which takes a long time, and the accuracy is also reduced.
따라서, 본 발명에서는 파악된 불량패턴 이미지를 분석하여 단락 또는 단선 여부를 자동적으로 판별하고 레이저 작업이 이루어 지도록 신호를 출력하여 불량패턴이 정상패턴으로 복원되어 검사 및 복원에 필요한 공정시간이 대폭 감소될 수 있다. 또한, 검사 결과를 모니터링 하면서 레이저 작업을 지시하는 별도의 검사자가 필요치 않기 때문에 인력 및 검사비를 절감할 수 있는 효과가 있다.Therefore, the present invention analyzes the identified bad pattern image to automatically determine whether there is a short circuit or disconnection, and outputs a signal to perform a laser operation to restore the bad pattern to a normal pattern, significantly reducing the process time required for inspection and restoration. Can be. In addition, since there is no need for a separate inspector to direct the laser work while monitoring the inspection result, it is possible to reduce manpower and inspection cost.
복원단계(S300)는 상기 패턴결함에 대한 단락 또는 단선 정보를 인식하여, 리페어 작업을 수행하는 단계이다. 상기 판독단계(S200)에서 단락 또는 단선 여부가 판별되면, 그에 따른 리페어 작업을 수행하는 것이다. 즉, 연결되어야 할 부분이 끊어져 있는 경우(단선)에는 끊어진 부분을 연결해주고, 끊어져야 할 부분이 연결된 경우(단락)에는 연결된 부분을 끊어주는 것이다.The restoration step (S300) is a step of performing a repair operation by recognizing short circuit or disconnection information on the pattern defect. If it is determined whether the short circuit or disconnection in the reading step (S200), it is to perform a repair operation accordingly. In other words, if the part to be disconnected is disconnected (disconnected), the disconnected part is connected. If the part to be disconnected is connected (shorted), the connected part is disconnected.
본 발명의 바람직한 실시 예에 따르면 상기 복원단계(S300)에서 리페어가 완료된 기판(10)에 대한 재검사를 수행하는 재검사단계(S400)를 더 시행할 수 있다. 재검사단계(S400)는 상기 리페어가 완료된 기판(10)에 대한 재검사를 수행하는 단계로서, 상기와 같이 불량판별 이후 레이저 작업에 의해 복원이 완료된 기판(10)에 대한 2차 검사가 자동적으로 이루어져 불량발생을 현저히 낮출 수 있는 효과가 있다. 상기 재검사 단계(S400)에서 추가적인 패턴결함이 검출될 경우, 판독단계(S200)와 복원단계(S300)를 추가적으로 시행하고, 또 다시 재검사를 실시할 수 있다.According to a preferred embodiment of the present invention, the re-inspection step (S400) for performing a re-inspection on the repaired substrate 10 in the restoration step (S300) may be further performed. The re-inspection step (S400) is a step of performing a re-inspection on the repaired substrate 10, and the second inspection of the substrate 10, which is completed by the laser operation after the failure determination as described above, is automatically performed. There is an effect that can significantly reduce the occurrence. When additional pattern defects are detected in the retesting step S400, the readout step S200 and the reconstruction step S300 may be additionally performed and retested again.
본 발명의 일 실시 예에 따르면, 상기 검사단계(S100)는, 기판(10)의 표면을 검사하는 1차 검사단계(S110)와, 상기 1차 검사단계(S110)에서 패턴결함이 발생된 위치를 상기 1차 검사단계(S110)보다 고배율로 확대하여 검사하는 2차 검사단계(S120)를 포함한다. 일례로, 상기 1차 검사단계(S110)는 ×5 내지 ×10의 저배율로 확대하여 검사하고, 2차 검사단계(S120)는 1차 검사단계(S110)에서 패턴결함이 발생된 위치를 ×50 내지 ×100의 고배율로 확대하여 검사할 수 있다.According to one embodiment of the invention, the inspection step (S100), the first inspection step (S110) for inspecting the surface of the substrate 10, and the position where the pattern defect occurred in the first inspection step (S110) It includes a secondary inspection step (S120) for inspecting by expanding at a higher magnification than the primary inspection step (S110). For example, the first inspection step (S110) is enlarged and inspected at a low magnification of × 5 to × 10, and the second inspection step (S120) is a position at which the pattern defect occurred in the first inspection step (S110) × 50. The inspection can be carried out at a high magnification of ˜ × 100.
즉, 기판(10)의 전체 표면을 ×5 내지 ×10의 비교적 저배율과 고배속으로 검사를 시행하게 되는데 이때, 불량이 검출된 영역의 좌표정보를 기록한 뒤, 해당 좌표를 ×50 내지 ×100의 고배율로 확대하여 정밀하게 검사하고, 패턴불량이 확정되면 해당좌표 및 해당좌표의 불량패턴 이미지를 전송한다. That is, the entire surface of the substrate 10 is inspected at a relatively low magnification and a high magnification of × 5 to × 10. At this time, the coordinate information of the region where the defect is detected is recorded, and then the coordinates are converted to a high magnification of × 50 to × 100. If the pattern defect is confirmed, it transmits the coordinate and the defective pattern image of the coordinate.
상기와 같이 저배율로 기판(10) 전체를 고배속으로 검사하고, 불량이 검출된 영역에 대해서만 2차로 정밀하게 검사함에 따라 검사속도의 향상을 기대할 수 있고, 보다 정확한 비전검사가 시행될 수 있다. 본 발명의 이해를 돕기 위해 1차 검사단계(S110)를 ×5 내지 ×10의 배율로 확대하여 검사하고, 2차 검사단계(S120)는 ×50 내지 ×100의 배율로 확대하여 검사한다고 기재하였으나, 본 발명은 이에 한정되는 것을 아니며, 2차 검사단계(S120)가 1차 검사단계(S110)에 비해 고배율로 검사되는 범위에서 다양한 실시 예가 발생할 수 있다.As described above, the entire inspection of the substrate 10 at a high magnification at high magnification, and inspection of the second precisely only in the region where the defect is detected can be expected to improve the inspection speed, and more accurate vision inspection can be performed. In order to facilitate the understanding of the present invention, the first inspection step (S110) is inspected by magnifying at a magnification of × 5 to × 10, and the second inspection step (S120) is described as being inspected by expanding at a magnification of × 50 to × 100. However, the present invention is not limited thereto, and various embodiments may occur in a range in which the second inspection step S120 is inspected at a higher magnification than the first inspection step S110.
본 발명의 일 실시 예에 따르면, 상기 복원단계(S300)는, 상기 판독단계(S200)의 단락 또는 단선 결과에 따라 레이저 빔(20)의 광경로를 생성하는 광경로 생성단계(S310)와, 상기 생성된 광경로에 따라 레이저 빔(20)을 조사하는 레이저빔 조사단계(S320)를 포함한다.According to an embodiment of the present invention, the restoration step (S300), the optical path generation step (S310) for generating an optical path of the laser beam 20 in accordance with the short circuit or disconnection result of the reading step (S200), Laser beam irradiation step (S320) for irradiating the laser beam 20 in accordance with the generated optical path.
즉, 상기 광경로 생성단계(S310)에서는 상기 패턴결함이 발생된 기판(10)의 좌표로 레이저 빔(20)을 출력할 수 있도록 광경로를 생성한다. 또한, 상기 레이저빔 조사단계(S320)에서는 광경로 생성단계(S310)에서 생성된 광경로에 따라 레이저 빔(20)을 조사하여 패턴결함이 발생된 기판(10)에 레이저 빔(20)이 도달하여 리페어 작업이 이루어지도록 한다. That is, in the optical path generation step (S310), the optical path is generated to output the laser beam 20 at the coordinates of the substrate 10 on which the pattern defect is generated. In the laser beam irradiation step S320, the laser beam 20 reaches the substrate 10 on which the pattern defect is generated by irradiating the laser beam 20 according to the light path generated in the light path generation step S310. To make repair work.
본 발명의 일 실시 예에 따르면, 상기 레이저빔 조사단계(S320)는 레이저 빔(20)을 출력하는 레이저 발생부(30)와, 상기 레이저 빔(20)을 상기 패턴결함이 발생한 기판(10)의 표면에 조사하도록 광경로를 변화시키는 반사부(40)를 통해 수행된다. 상기 반사부(40)는 복수의 반사미러를 포함할 수 있으며, 레이저 빔(20)을 집광하거나 평행광 생성을 위한 복수의 렌즈가 추가적으로 배치될 수 있다. 또한, 상기 레이저 발생부(30) 또는 반사부(40)는 직선이동 및 회전동작이 가능하여 레이저 발생부(30)에서 출력된 레이저 빔(20)의 광경로를 다양하게 변경할 수 있다.According to one embodiment of the present invention, the laser beam irradiation step (S320) is a laser generating unit 30 for outputting a laser beam 20, and the laser beam 20 the substrate 10 on which the pattern defect occurred It is carried out through the reflecting portion 40 for changing the light path to irradiate the surface of the. The reflector 40 may include a plurality of reflecting mirrors, and a plurality of lenses for collecting the laser beam 20 or generating parallel light may be additionally disposed. In addition, the laser generator 30 or the reflector 40 may be linearly moved and rotated so that the optical path of the laser beam 20 output from the laser generator 30 may be variously changed.
따라서, 레이저 발생부(30)에서 레이저 빔(20)이 출력되면, 반사부(40)는 광경로 생성단계(S310)에서 전송된 정보를 통해 광경로를 변경시켜 기판(10)의 불량패턴이 발생된 좌표로 레이저가 도달하여 리페어 작업이 이루어지도록 작용한다.Therefore, when the laser beam 20 is output from the laser generator 30, the reflector 40 changes the optical path through the information transmitted in the optical path generation step S310, so that the defective pattern of the substrate 10 is reduced. The laser arrives at the generated coordinates and acts as a repair.
이상의 설명은 본 발명의 기술 사상을 예시적으로 설명한 것에 불과한 것으로서, 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자라면 본 발명의 본질적인 특성에서 벗어나지 않는 범위 내에서 다양한 수정, 변경 및 치환이 가능할 것이다. 따라서, 본 발명에 개시된 실시예 및 첨부된 도면들은 본 발명의 기술 사상을 한정하기 위한 것이 아니라 설명하기 위한 것이고, 이러한 실시예 및 첨부된 도면에 의하여 본 발명의 기술 사상의 범위가 한정되는 것은 아니다. 본 발명의 보호 범위는 아래의 청구범위에 의하여 해석되어야 하며, 그와 동등한 범위 내에 있는 모든 기술 사상은 본 발명의 권리범위에 포함되는 것으로 해석되어야 할 것이다.The above description is merely illustrative of the technical idea of the present invention, and various modifications, changes, and substitutions may be made by those skilled in the art without departing from the essential characteristics of the present invention. will be. Accordingly, the embodiments disclosed in the present invention and the accompanying drawings are not intended to limit the technical spirit of the present invention but to describe the present invention, and the scope of the technical idea of the present invention is not limited by the embodiments and the accompanying drawings. . The protection scope of the present invention should be interpreted by the following claims, and all technical ideas within the equivalent scope should be interpreted as being included in the scope of the present invention.

Claims (5)

  1. 기판의 패턴결함을 광학적으로 검사하고, 이를 기록한 정보를 전송하는 검사단계;An inspection step of optically inspecting the pattern defect of the substrate and transmitting the recorded information;
    상기 전송된 패턴결함의 정보에 기초하여 상기 패턴결함의 단락 또는 단선 여부를 판별하는 판독단계;A reading step of determining whether the pattern defect is shorted or disconnected based on the transmitted information of the pattern defect;
    상기 패턴결함에 대한 단락 또는 단선 정보를 인식하여, 리페어 작업을 수행하는 복원단계;를 포함하는 것을 특징으로 하는 기판 검사 및 리페어 방법.And reconstructing a repair operation by recognizing short circuit or disconnection information on the pattern defect.
  2. 제 1항에 있어서,The method of claim 1,
    상기 검사단계는:The inspection step is:
    상기 기판의 표면을 검사하는 1차 검사단계;A first inspection step of inspecting a surface of the substrate;
    상기 1차 검사단계에서 패턴결함이 발생된 위치를 상기 1차 검사단계보다 고배율로 확대하여 검사하는 2차 검사단계;를 포함하는 것을 특징으로 하는 기판 검사 및 리페어 방법.And a second inspection step of inspecting by expanding the position where the pattern defect occurred in the first inspection step at a higher magnification than the first inspection step.
  3. 제 1항에 있어서,The method of claim 1,
    상기 복원단계는: The restoration step is:
    상기 판독단계의 단락 또는 단선 결과에 따라 레이저 빔의 광경로를 생성하는 광경로 생성단계;An optical path generation step of generating an optical path of a laser beam according to a short circuit or a disconnection result of the reading step;
    상기 생성된 광경로에 따라 레이저 빔을 조사하는 레이저빔 조사단계;를 포함하는 것을 특징으로 하는 기판 검사 및 리페어 방법.And a laser beam irradiation step of irradiating a laser beam according to the generated optical path.
  4. 제 3항에 있어서, The method of claim 3, wherein
    상기 레이저빔 조사단계는 레이저 빔을 출력하는 레이저 발생부와, 상기 레이저 빔을 상기 패턴결함이 발생한 기판의 표면에 조사하도록 광경로를 변화시키는 반사부를 통해 수행되는 것을 특징으로 하는 기판 검사 및 리페어 방법.The laser beam irradiation step is performed through a laser generator for outputting a laser beam and a reflector for changing an optical path to irradiate the laser beam onto a surface of the substrate on which the pattern defect has occurred. .
  5. 제 1항에 있어서, The method of claim 1,
    상기 복원단계에서 리페어가 완료된 기판에 대한 재검사를 수행하는 재검사단계;를 더 포함하는 것을 특징으로 하는 기판 검사 및 리페어 방법.And a re-inspection step of performing a re-inspection on the substrate on which the repair is completed in the restoration step.
PCT/KR2013/002033 2012-07-19 2013-03-14 Method for inspecting and repairing substrate WO2014014181A1 (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050030023A (en) * 2003-09-24 2005-03-29 삼성전자주식회사 Test and repair apparatus for tft substrate
KR20050041357A (en) * 2003-10-30 2005-05-04 엘지.필립스 엘시디 주식회사 System for testing a pattern of a liquid crystal display device and method of testing and repairing the pattern using thereof
KR20050059897A (en) * 2003-12-15 2005-06-21 주식회사 하이닉스반도체 Reticle for a silicon process
KR20090107815A (en) * 2008-04-10 2009-10-14 주식회사 에이치앤씨 Optical mesurement apparatus and inspection apparatus including the same
KR20090111780A (en) * 2008-04-22 2009-10-27 올림푸스 가부시키가이샤 Repair apparatus, repair method, and control apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050030023A (en) * 2003-09-24 2005-03-29 삼성전자주식회사 Test and repair apparatus for tft substrate
KR20050041357A (en) * 2003-10-30 2005-05-04 엘지.필립스 엘시디 주식회사 System for testing a pattern of a liquid crystal display device and method of testing and repairing the pattern using thereof
KR20050059897A (en) * 2003-12-15 2005-06-21 주식회사 하이닉스반도체 Reticle for a silicon process
KR20090107815A (en) * 2008-04-10 2009-10-14 주식회사 에이치앤씨 Optical mesurement apparatus and inspection apparatus including the same
KR20090111780A (en) * 2008-04-22 2009-10-27 올림푸스 가부시키가이샤 Repair apparatus, repair method, and control apparatus

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