WO2014010961A1 - Procédé de fabrication de film en nanotube de carbone - Google Patents

Procédé de fabrication de film en nanotube de carbone Download PDF

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Publication number
WO2014010961A1
WO2014010961A1 PCT/KR2013/006192 KR2013006192W WO2014010961A1 WO 2014010961 A1 WO2014010961 A1 WO 2014010961A1 KR 2013006192 W KR2013006192 W KR 2013006192W WO 2014010961 A1 WO2014010961 A1 WO 2014010961A1
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nanoparticles
binder layer
wet
layer
cnt coating
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PCT/KR2013/006192
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English (en)
Korean (ko)
Inventor
정다정
김승렬
방윤영
천기영
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(주)탑나노시스
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Publication of WO2014010961A1 publication Critical patent/WO2014010961A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/24—Electrically-conducting paints
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/28—Nitrogen-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40—Additives
    • C09D7/66—Additives characterised by particle size
    • C09D7/67—Particle size smaller than 100 nm
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40—Additives
    • C09D7/66—Additives characterised by particle size
    • C09D7/68—Particle size between 100-1000 nm
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/04—Carbon
    • C08K3/041—Carbon nanotubes

Definitions

  • the present invention relates to a method for manufacturing a carbon nanotube film, and more specifically, to form a carbon nanotube pattern in a desired shape on a substrate, and can be applied to various fields such as charging, display, and optical fields. It relates to a film production method.
  • the transparent conductive film has high conductivity (for example, sheet resistance of less than 1 ⁇ 10 3 ⁇ / sq) and high transmittance (more than 80%) in the visible region.
  • the transparent conductive film may include a plasma display panel (PDP), a liquid crystal display (LCD) device, a light emitting diode (LED), an organic light emitting diode (OLED), and an organic light emitting diode (OLED).
  • PDP plasma display panel
  • LCD liquid crystal display
  • LED light emitting diode
  • OLED organic light emitting diode
  • OLED organic light emitting diode
  • OLED organic light emitting diode
  • OLED organic light emitting diode
  • the carbon nanotubes are evaluated as an ideal material capable of realizing conductivity while maintaining optical properties due to the theoretical percolation concentration of only 0.04%, and when light is coated on a specific substrate in nanometer units, light transmits in the visible region. It can be used as a transparent electrode because it shows transparency and maintains electrical property, which is a unique characteristic of carbon nanotubes.
  • carbon nanotubes can be printed and used in a paste state in addition to the direct growth method, so that the large area is easy.
  • Carbon nanotubes are chemically very stable and resistant to wet etching. Accordingly, dry etching is used to form the carbon nanotube pattern.
  • the carbon nanotube film manufacturing method of the present invention includes forming a wet etchable base binder layer on a substrate. Forming a CNT coating layer on the upper surface of the base binder layer, the CNT coating layer including carbon nanotubes and wet-etchable nanoparticles. Forming a wet etchable top binder layer on the CNT coating layer. And removing the CNT coating layer, the top binder layer, and the etching target region of the base binder layer through wet etching.
  • the nanoparticles may be ceramic nanoparticles or metal oxide nanoparticles.
  • the nanoparticles are TiO 2 , SiO 2 , SiON, SiN x , SiN x , ZnO, SnO, Al 2 O 3 , ZrO 2 , Y 2 O 3 , WO 3 , V 2 O 5 , NiO, Mn At least one selected from 3 O 4 , MgO, La 2 O 3 , Fe 2 O 3 , Cr 2 O 3 , Co 3 O 4 , CuO, CeO 2 , ITO, ATO, AZO, FTO, GZO, Sb 2 O 3 Can be.
  • the size of the nanoparticles may be 1nm to 1 ⁇ m.
  • the forming of the CNT coating layer is performed by coating a CNT coating solution in which a nanoparticle and carbon nanotubes are mixed in a solvent, and the nanoparticles may have a content of 1 to 500 with respect to 100 parts by weight of carbon nanotubes. Can be.
  • At least one of the base binder layer and the top binder layer may include ceramic-based or metal oxide-based nanoparticles.
  • a pattern may be formed by wet etching carbon nanotubes. Accordingly, it is possible to form a fine carbon nanotube pattern, and even in the case of a large-area carbon nanotube film, it is possible to quickly form a carbon nanotube pattern.
  • FIG. 1 is a flow chart of a carbon nanotube film production method according to an embodiment of the present invention.
  • FIGS 2 to 6 are cross-sectional views showing each step of the carbon nanotube film manufacturing method according to an embodiment of the present invention.
  • FIG. 1 is a flow chart showing each step of the method for producing a carbon nanotube film (S100) according to an embodiment of the present invention.
  • the carbon nanotube film manufacturing method (S100) according to an embodiment of the present invention, the step of forming a wet etchable base binder layer on the substrate (S110), and the base binder layer upper surface Forming a CNT coating layer including carbon nanotubes and wet etchable nanoparticles (S120), and forming a wet etchable top binder layer on the upper surface of the CNT coating layer (S130), and through wet etching. Removing the CNT coating layer, the top binder layer, and the etching target region of the base binder layer (S140).
  • FIGS. 2 to 6 are cross-sectional views showing each step of the carbon nanotube film manufacturing method according to an embodiment of the present invention. With reference to Figures 2 to 6, each step of the carbon nanotube film manufacturing method according to an embodiment of the present invention will be described in more detail.
  • a wet etchable base binder layer 120 is formed on the substrate 110.
  • the substrate 110 may be glass, a polymer such as PET, PC, PI, PEN, COC, or a material such as paper.
  • the substrate 110 may be applied as a display panel or a touch screen.
  • the substrate 110 is preferably made of a transparent material.
  • the substrate 110 may be used as a member requiring flexibility such as electronic paper.
  • the base material is made of a transparent inorganic substrate or a transparent polymer substrate to have flexibility.
  • the base binder layer 120 is wet etchable.
  • the base binder layer 120 may include a wet etchable binder.
  • the binder used in the base binder layer 120 is applied according to the material of the base material. Therefore, the binder used in the base binder layer 120 may not be wet etched.
  • the base binder layer 120 may further include wet particles capable of wet etching nanoparticles 123.
  • the nanoparticles may be ceramic nanoparticles or metal oxide nanoparticles.
  • the nanoparticles are TiO 2 , SiO 2 , SiON, SiN x , SiN x , ZnO, SnO, Al 2 O 3 , ZrO 2 , Y 2 O 3 , WO 3 , V 2 O 5 , NiO, Mn At least one selected from 3 O 4 , MgO, La 2 O 3 , Fe 2 O 3 , Cr 2 O 3 , Co 3 O 4 , CuO, CeO 2 , ITO, ATO, AZO, FTO, GZO, Sb 2 O 3 Can be.
  • the base binder layer 120 may be formed by mixing the binder 121 and the nanoparticles 123 in a solvent to form a base binder solution and then coating the substrate on the substrate.
  • the solvent may be selected from alcohols, amines, distilled water and general organic solvents. It is preferable that the boiling point is 150 ° C. or lower so that the solvent is easily removed later.
  • the wet etchable nanoparticles 123 may be mixed to enable wet etching.
  • the size of the nanoparticles 123 may be 1nm to 1 ⁇ m.
  • the size of the nanoparticles is less than 1 nm, even if the nanoparticles are wet etched, the effects on the binder layer are insignificant, so that the nanoparticles cannot be etched together with the binder layer. This is because there is a problem that the coating surface is not uniformly dispersed in the sink, or the coating surface is formed unevenly after coating. In this case, it is more preferable that the nanoparticles are 1 nm to 100 nm.
  • the nanoparticles 123 preferably has a content of 1 to 500 parts by weight with respect to 100 parts by weight of the base binder, which is wet when less than 1 part by weight If the etching is not properly, if the amount exceeds 500 parts by weight, the physical properties of the base binder layer is changed, and the particles after coating have a problem that the haze is increased by scattering light.
  • the nanoparticles may be 1 to 100 parts by weight, more preferably 20 to 50 parts by weight with respect to 100 parts by weight of the base binder.
  • the base binder layer 120 serves to bond the substrate 110 and the CNT coating layer 130 (see FIG. 3) to be described later.
  • the base binder layer 120 is wet-etched together with the top binder layer 140 (see FIG. 4), which will be described later, and the CNT coating layer 130 between the base binder layer 120 and the top binder layer. 4) is wet etched.
  • the CNT coating layer 130 is formed on the base binder layer 120.
  • the CNT coating layer 130 includes carbon nanotubes (c). Carbon Nanotubes (CNTs) form a tube where one carbon is bonded to another carbon atom in a hexagonal honeycomb pattern to form a tube. The diameter of the tube is extremely small, at the nanometer level, and exhibits unique electrochemical properties. When the nanotubes are formed of a thin conductive film on a plastic or glass substrate, they can be used as transparent electrodes because they exhibit high transmittance and conductivity in the visible light region.
  • the coating method of the CNT coating layer 120 may use a general wet coating method such as spray coating, gravure coating, slot die coating, dip coating, bar coating, roll to roll coating.
  • a part of the carbon nanotubes (C) constituting the CNT coating layer 130 may be inserted into the base binder layer 120 to be bonded. Accordingly, while the base binder layer 120 is wet etched, the CNT coating layer 130 may be wet etched together.
  • the CNT coating layer 130 may include wet etchable nanoparticles 133.
  • the nanoparticles 133 are bound to a binder together with the carbon nanotubes (C), thereby adhering to the carbon nanotubes (C). Accordingly, during the wet etching, the nanoparticles 133 are etched to allow the etching liquid to escape to the base binder layer 120 so that the carbon nanotubes C may be etched together with the base binder layer 120 later. To help.
  • the nanoparticles 133 may be ceramic nanoparticles or metal oxide nanoparticles.
  • the nanoparticles are TiO 2 , SiO 2 , SiON, SiN x , SiN x , ZnO, SnO, Al 2 O 3 , ZrO 2 , Y 2 O 3, WO 3 , V 2 O 5 , NiO, Mn At least one selected from 3 O 4 , MgO, La 2 O 3 , Fe 2 O 3 , Cr 2 O 3 , Co 3 O 4 , CuO, CeO 2 , ITO, ATO, AZO, FTO, GZO, Sb 2 O 3 Can be.
  • the CNT coating layer 130 may be formed by coating a CNT coating solution on the base binder layer 120.
  • the CNT coating solution may be prepared by mixing a binder, a nanoparticle 133 and a carbon nanotube (C) in a solvent.
  • carbon nanotubes (C) are dispersed.
  • One example of the carbon nanotube dispersion method is to disperse the carbon nanotubes in an organic solvent such as amide-based DMF (NN-dimethylformamide) or NMP (1,2-dichlorobenzene, N-methylpyrrolidone).
  • organic solvent such as amide-based DMF (NN-dimethylformamide) or NMP (1,2-dichlorobenzene, N-methylpyrrolidone).
  • the carbon nanotube dispersion method may be a water-soluble dispersant.
  • the water-soluble dispersant includes sodium dodecyl sulphate (SDS), triton x-100 (tx-100), sodium dodecylbenzenesulfonate (NaDDBS), gum arabic, and the like.
  • a binder and nanoparticles are added to a solvent in which carbon nanotubes are dispersed.
  • the binder can be applied to any conventional binder for binding between the carbon nanotubes.
  • the step of forming the CNT coating layer is made by coating a CNT coating solution in which the nanoparticles and carbon nanotubes are mixed in a solvent, the nanoparticles content of 1 to 500 parts by weight relative to 100 parts by weight of carbon nanotubes Can have
  • the nanoparticles are less than 1 part by weight, wet etching is not performed properly.
  • the nanoparticles are more than 500 parts by weight, the dispersibility of the CNT coating liquid is lowered, the properties of the CNT layer are changed after coating, and the nanoparticles scatter light. There is a problem that haze increases.
  • the nanoparticles may be 1 to 100 parts by weight, more preferably 20 to 50 parts by weight with respect to 100 parts by weight of carbon nanotubes.
  • the size of the nanoparticles 133 is preferably 1nm to 1 ⁇ m. If the size of the nanoparticles is less than 1nm, even if the nanoparticles are wet etched, the effect on the CNT layer is insignificant, and the etching solution penetrates into the base binder layer, thereby preventing the CNT layer and the base binder layer from etching together. This is because when the size of the nanoparticles exceeds 1 ⁇ m, the nanoparticles do not uniformly disperse in the coating solution and sink or decrease the dispersibility of CNTs.
  • the nanoparticles 133 may be ceramic nanoparticles or metal oxide nanoparticles.
  • the nanoparticles are TiO 2 , SiO 2 , SiON, SiN x , SiN x , ZnO, SnO, Al 2 O 3 , ZrO 2 , Y 2 O 3 , WO 3 , V 2 O 5 , NiO, Mn At least one selected from 3 O 4 , MgO, La 2 O 3 , Fe 2 O 3 , Cr 2 O 3 , Co 3 O 4 , CuO, CeO 2 , ITO, ATO, AZO, FTO, GZO, Sb 2 O 3 Can be.
  • a wet etchable top binder layer 140 is applied to the upper surface of the CNT coating layer 130.
  • the top binder layer may perform a function of improving durability such as preventing scratches on the CNT coating layer.
  • optical characteristics such as brightness improvement and the prevention of diffuse reflection, can also be improved.
  • the top binder layer 140 is made of a binder 141 material.
  • the binder material typically bonds between carbon nanotube strands. Therefore, at least a portion of the top binder layer 140 is coupled to the carbon nanotube strands of the CNT coating layer 130. Accordingly, the CNT coating layer 130 is coupled to the bottom by the binder material of the base binder layer 120, and is coupled to the binder 141 material of the top binder layer 140 to the upper side.
  • the top binder layer 140 may be wet etched. To this end, a wet etchable binder may be applied as the material of the top binder layer 140.
  • the top binder layer 140 may be formed by mixing wet etchable nanoparticles 143 with a binder.
  • the binder can be selected according to the function of the top binder layer, and in this case, a binder which cannot be wet etched can be used as the main material of the top binder layer.
  • the entire top binder layer may be wet etched as the nanoparticles are wet etched.
  • the nanoparticles may have a size of 1 nm to 1 ⁇ m.
  • the size of the nanoparticles is less than 1 nm, even if the nanoparticles are wet-etched, the effect on the binder layer is minimal, so that the nanoparticles cannot be etched together with the binder layer.
  • the coating liquid is This is because there is a problem that the coating surface is not uniformly dispersed in the sink, or the coating surface is formed unevenly after coating.
  • the nanoparticles preferably have a content of 1 to 500 with respect to 100 parts by weight of the top binder, which is less than 1 part by weight of the wet etching is not properly, 500 This is because when the weight part is exceeded, the physical properties of the base binder layer are changed, and the particles after coating have a problem in that haze is increased by scattering light.
  • the etching target region E of the base binder layer 120, the CNT coating layer 130, and the top binder layer 140 is removed by wet etching.
  • the etching paste 150 is pattern-coated on the etching target region E of the top binder layer 140.
  • the surface on which the etching paste 150 is applied is etched by the wet etching equipment.
  • the etching paste has a viscosity of about thousands to tens of thousands of Cps and is patterned on the top binder layer.
  • the screen printing method can be used as a method of pattern-forming the said etching paste 150.
  • the screen printing method may be performed by disposing a screen mask on the top binder layer 140 and printing an etching paste on the top binder layer through a hollow portion of the screen mask by squeeze.
  • the CNT coating layer 130 is bound to the top binder layer 140 on the upper side and the base binder layer 120 on the lower side, and nanoparticles are added to the CNT coating layer, thereby the top binder. While the layer 140 and the base binder layer 120 are etched along the etching paste 150, the CNT coating layer 130 bound thereto is easily etched.
  • the wet etching method is not limited to the wet etching method using the above-described etching paste. That is, the wet etching that can be applied to the present invention can apply a photoresist method. That is, a photoresist, which is a photosensitive resin, is coated, and a photoresist is selectively transmitted by transmitting light having a wavelength in a specific region using a mask serving as a patterned disc, and then a photoresist is selectively developed.
  • the etching target region E which is a portion selectively exposed by the developing process, can be removed by a chemical method such as an etching solution or a reactive gas.
  • the present invention is not limited to the etching paste coating method or the photoresist method, and the top binder layer 140, the CNT coating layer 130, and the base binder layer (in the etching target region E) using a chemical solution ( If 120 can be melted, all of the present invention.
  • the coating layer may be subjected to a heat treatment step of heating to an appropriate temperature to react with the etching paste.
  • the etching rate can be increased by introducing heat into the etching paste through the above process.
  • the etching paste 150, the top binder layer 140, the CNT coating layer 130, and the base binder layer 120 to which the etching paste is applied are removed by washing. Go through the steps. In the washing step, when the etching paste 150 is rinsed in di-water, the top binder layer 140, the CNT coating layer 130, and the base are coated with the etching paste 150 and the etching paste. The binder layer 120 is etched and removed to complete the patterned carbon nanotube film 100.
  • the removing of the CNT coating layer may include removing the top binder layer 140, the base binder layer 120, and the nanoparticles of the CNT coating layer 130 by wet etching. have. And, it may have a step of removing the remaining carbon nanotubes of the CNT coating layer in the etching target region. This is first wet etching the wettable top binder layer and the base binder layer, when wet etching the nanoparticles of the CNT coating layer, the carbon nanotubes of the CNT coating layer is not networked with the top binder layer and the base binder layer It remains in a muggy state. The carbon nanotubes can be easily washed out by water.
  • the CNT coating layer is removed from the etching target region. Accordingly, a fine pattern of the carbon nanotube film is possible, and a wide range of patterns can be formed.
  • the CNT coating layer 130 is patterned by wet etching. Accordingly, there is an advantage in that the conventional wet etching equipment for forming a pattern of an electrode such as ITO can be applied as it is. In addition, there is an advantage that can be quickly etched, and have a fine pattern width.
  • the CNT coating layer itself can be wet-etched, at least one of the top binder layer and the base binder layer may be omitted.
  • the present invention is applicable to manufacturing a carbon nanotube film, the carbon nanotube film produced by the above method can be applied to various fields such as charging field, display field, optical field.

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  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Materials Engineering (AREA)
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Abstract

L'objectif de la présente invention est de fournir un procédé de fabrication d'un film en nanotube de carbone, qui permet à un motif en nanotube de carbone large et fin d'être fabriqué de manière simple et rapide. A cet effet, le procédé de fabrication d'un film en nanotube de carbone selon la présente invention comprend une étape de formation d'une couche de liant de base pouvant être gravée par gravure humide sur une base. Le procédé comprend une étape de formation d'une couche de revêtement en nanotube de carbone (CNT) comprenant des nanotubes de carbone et des nanoparticules pouvant être gravées par gravure humide sur la surface supérieure de la couche de liant de base. Le procédé comprend une étape de formation d'une couche de liant supérieure pouvant être gravée par gravure humide sur la surface supérieure de la couche de revêtement CNT. Le procédé comprend une étape de retrait de la zone cible de gravure de la couche de revêtement CNT, de la couche de liant supérieure, et de la couche de liant de base par gravure humide.
PCT/KR2013/006192 2012-07-11 2013-07-11 Procédé de fabrication de film en nanotube de carbone WO2014010961A1 (fr)

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Application Number Priority Date Filing Date Title
KR1020120075785A KR101380911B1 (ko) 2012-07-11 2012-07-11 탄소나노튜브필름 제조 방법
KR10-2012-0075785 2012-07-11

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WO2014010961A1 true WO2014010961A1 (fr) 2014-01-16

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090019303A (ko) * 2007-08-20 2009-02-25 재단법인 대구테크노파크 전도성고분자 코팅 탄소나노튜브 제조방법 및 그전도성고분자 코팅 탄소나노튜브
KR20110047515A (ko) * 2009-10-30 2011-05-09 한국전기연구원 금속산화물이 코팅된 탄소나노튜브를 이용한 전도성 코팅막의 제조방법 및 그 전도성 코팅막
US20110111202A1 (en) * 2009-11-12 2011-05-12 National Tsing Hua University Multilayer film structure, and method and apparatus for transferring nano-carbon material
US20110143496A1 (en) * 2009-12-11 2011-06-16 Du Pont Apollo Limited Method of making monolithic photovoltaic module on flexible substrate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090019303A (ko) * 2007-08-20 2009-02-25 재단법인 대구테크노파크 전도성고분자 코팅 탄소나노튜브 제조방법 및 그전도성고분자 코팅 탄소나노튜브
KR20110047515A (ko) * 2009-10-30 2011-05-09 한국전기연구원 금속산화물이 코팅된 탄소나노튜브를 이용한 전도성 코팅막의 제조방법 및 그 전도성 코팅막
US20110111202A1 (en) * 2009-11-12 2011-05-12 National Tsing Hua University Multilayer film structure, and method and apparatus for transferring nano-carbon material
US20110143496A1 (en) * 2009-12-11 2011-06-16 Du Pont Apollo Limited Method of making monolithic photovoltaic module on flexible substrate

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KR20140008219A (ko) 2014-01-21
KR101380911B1 (ko) 2014-04-02

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