WO2014008819A1 - Micro-electro-mechanical systems structure and sacrificial layer wet etching method thereof - Google Patents

Micro-electro-mechanical systems structure and sacrificial layer wet etching method thereof Download PDF

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Publication number
WO2014008819A1
WO2014008819A1 PCT/CN2013/078525 CN2013078525W WO2014008819A1 WO 2014008819 A1 WO2014008819 A1 WO 2014008819A1 CN 2013078525 W CN2013078525 W CN 2013078525W WO 2014008819 A1 WO2014008819 A1 WO 2014008819A1
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sacrificial layer
tackifier
adhesion
wet etching
amount
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PCT/CN2013/078525
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French (fr)
Chinese (zh)
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苏佳乐
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无锡华润上华半导体有限公司
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Publication of WO2014008819A1 publication Critical patent/WO2014008819A1/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
    • B81C1/00468—Releasing structures
    • B81C1/00476—Releasing structures removing a sacrificial layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0133—Wet etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching

Definitions

  • the present invention relates to the field of microelectromechanical systems (MEMS) manufacturing, and more particularly to
  • MEMS Micro-Electro-Mechanical Systems
  • microelectromechanical systems are micro-devices or systems that can be mass-produced, integrating micro-mechanisms, micro-sensors, micro-actuators, and signal processing and control circuits, up to the interface, communication, and power supply.
  • MEMS has evolved with the development of semiconductor integrated circuit microfabrication technology and ultra-precision machining technology.
  • the surface sacrificial layer technology is usually used, that is, in the process of forming a micromechanical structure cavity or a movable microstructure, various special structural parts required for deposition on the underlying film are firstly deposited with structural materials. Then, the film is etched away with a chemical etchant, but the microstructure is not damaged, and then the upper film structure (cavity or microstructure) is obtained. Since the removed underlying film acts only as a separation layer, it is called a sacrificial layer.
  • Commonly used structural materials are polysilicon, single crystal silicon, silicon nitride, silicon oxide, and metal.
  • the commonly used sacrificial layer materials are mainly silicon oxide, polysilicon, and photoresist.
  • the sacrificial layer can be used to fabricate a variety of moving microstructures, such as microbridges, cantilever beams, and cantilever blocks. It is also commonly used to make sensitive and actuator components, such as resonant miniature pressure sensors, resonant miniature gyros, and miniature acceleration. Take into account micro motors, various brakes, etc.
  • the existing sacrificial layer fabrication techniques are mainly wet etching and dry etching. These two techniques cannot control the corrosion morphology of the sacrificial layer very well, and it is difficult to meet the requirements of a specific MEMS structure. Summary of the invention
  • the present invention provides a MEMS system Sacrificial layer wet method for (MEMS) structures.
  • a tackifier is applied on the surface of the sacrificial layer and the adhesion between the sacrificial layer and the photoresist is changed by adjusting the amount of the tackifier, thereby obtaining the desired corrosion morphology by wet etching. Sacrifice layer.
  • adjusting the amount of tackifier includes detecting the adhesion of the surface of the sacrificial layer material to which the tackifier is applied and adjusting the tackifier based on the adhesion test results and the desired corrosion profile. the amount.
  • the adhesion is detected by detecting the contact angle of water droplets on the surface of the sacrificial layer material to which the tackifier is applied.
  • the detected contact angle is about 65 degrees by adjusting the amount of tackifier to obtain a linear sloped corrosion profile.
  • the angle of the linear ramp is approximately 40 degrees.
  • the adhesion agent is hexamethyldisilazane
  • applying a tackifier to the surface of the sacrificial layer comprises placing the substrate covering the sacrificial layer material in an oven for heating and After reaching a certain temperature, a hexamethylenedisilazane vapor is introduced into the oven.
  • the amount of tackifier is adjusted by controlling the time of passage of the hexamethyldisilazane vapor.
  • the time of etching in the buffer etchant (7:1) is 30 minutes.
  • the sacrificial layer is silicon dioxide and the silicon dioxide is overlying the silicon wafer substrate.
  • the sacrificial layer has a thickness of about 6 ⁇ m and is overlying the silicon wafer substrate by chemical vapor deposition.
  • the present invention also provides an electromechanical system (MEMS) structure comprising a sacrificial layer fabricated according to any of the foregoing methods.
  • MEMS electromechanical system
  • the method provided by the present invention changes the corrosion morphology formed by the wet etching process by adjusting the adhesion of the surface of the MEMS sacrificial layer to the photoresist prior to wet etching.
  • the corrosion morphology obtained by the wet etching of the MEMS sacrificial layer can be flexibly controlled, in particular, the corrosion morphology of the linear slope shape is obtained, so that the subsequent layers in the MEMS structure have good Coverage.
  • the method has the advantages of single operation, low cost and high efficiency.
  • FIG. 1 is a flow chart of a sacrificial layer wet etching method for a MEMS structure in accordance with an embodiment of the present invention.
  • FIG. 2 is a schematic illustration of a sacrificial layer of a MEMS structure obtained by the method provided by the present invention. detailed description
  • the sacrificial layer is a silicon dioxide layer overlying the silicon substrate. It should be understood by those skilled in the art that the embodiment is merely illustrative, and the wet etching method provided by the present invention can be applied to other similar materials and structures.
  • a silicon wafer substrate covered with silicon dioxide is provided in step S101.
  • the thickness of the silica can generally be about 6 ⁇ 12 ⁇ , and even under certain conditions, it can reach 20 ⁇ .
  • the silicon dioxide layer can be overlaid on the silicon wafer substrate, for example by chemical vapor deposition PECVD.
  • a tackifier is applied to the surface of the silica.
  • tackifiers are widely used in photolithography coating processes, and their use can be greatly Improve the adhesion of the photoresist to the surface of the substrate.
  • the tackifier applied may be HMDS (Hexamethyldisilazane), the chemical name of which is hexamethylenedisilazane.
  • the HMDS tackifier can be applied to the silica surface in a variety of ways, including vapor coating.
  • the silicon dioxide-coated silicon wafer substrate can be placed in an oven for heating and the HMDS vapor is introduced into the oven after reaching a certain temperature.
  • the HMDS is applied to the surface of the silica, it is possible to form a compound mainly composed of silazane by baking in an oven.
  • As a surfactant it can change the hydrophilicity of the surface of the oxide layer.
  • the adhesion of the silica surface can be controlled to the desired level by adjusting the amount of HMDS.
  • the adhesion of the surface of the silica to which the tackifier is applied is detected.
  • the adhesion can be detected by detecting the contact angle of water droplets on the surface of the silica to which the tackifier is applied, as indicated by <
  • the surface with strong adhesion is less hydrophilic, while the surface with poor adhesion is more hydrophilic. Accordingly, the contact angle formed by the water droplets on the hydrophilic surface is small, and the contact angle formed on the surface which is hydrophobic is large.
  • step S104 the amount of the tackifier is adjusted in accordance with the result of the adhesion test in step S103 and the desired corrosion profile.
  • the relationship between the contact angle of the water droplet detection and the resulting corrosion morphology that is, the relationship between adhesion and corrosion morphology, can be predetermined by a large number of experiments.
  • the above steps may be performed on a small number of test pieces first to determine the amount of tackifier corresponding to the desired corrosion profile, thereby controlling the amount of tackifier to a predetermined level during mass production to ensure the desired corrosion shape is obtained. appearance.
  • step S105 a photoresist is applied to the surface of the silica to which the tackifier is applied, and further, other conventional wet etching steps are performed in step S106, including, for example, exposure, degumming, chemical etching, and the like.
  • the contact angle of the water droplet detection is about 65 degrees by adjusting the amount of the tackifier such as HMDS.
  • the surface of the sacrificial layer is more hydrophilic and the adhesion to the photoresist is relatively poor.
  • the angle of the straight slope can be approximately 40 degrees.
  • sensing layer such as silicon nitride
  • the linear slope-shaped sacrificial layer corrosion morphology shown in Figure 2 allows the sensing layer material to have good coverage thereon.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)

Abstract

A Micro-Electro-Mechanical Systems (MEMS) structure and a sacrificial layer wet etching method thereof. The method applies adhesion promoters on a sacrificial layer surface, and changes the viscosity between the sacrificial layer and a photoresist by adjusting the amount of adhesion promoters, thus the sacrificial layer having required corrosion morphology is obtained by wet etching. The method can flexibly control the morphology formed by making MEMS sacrificial layer via wet etching, especially the corrosion morphology of linear ramp, thus the following layers of the MEMS structure have better cover ability.

Description

敫机电系统结构及其牺牲层湿法腐蚀方法 技术领域  敫Electro-mechanical system structure and its sacrificial layer wet etching method
本发明涉及微机电系统（ MEMS )制造领域， 并且更具体地涉及 The present invention relates to the field of microelectromechanical systems (MEMS) manufacturing, and more particularly to
MEMS结构的牺牲层湿法腐蚀方法和用该方法得到的 MEMS结构。 背景技术 A sacrificial layer wet etching method for a MEMS structure and a MEMS structure obtained by the method. Background technique
MEMS ( Micro-Electro-Mechanical Systems )微机电系统是指可批 量制作的， 集微型机构、 微型传感器、 微型执行器以及信号处理和控 制电路、 直至接口、 通信和电源等于一体的微型器件或系统。 MEMS 是随着半导体集成电路微细加工技术和超精密机械加工技术的发展 而发展起来的。  MEMS (Micro-Electro-Mechanical Systems) microelectromechanical systems are micro-devices or systems that can be mass-produced, integrating micro-mechanisms, micro-sensors, micro-actuators, and signal processing and control circuits, up to the interface, communication, and power supply. MEMS has evolved with the development of semiconductor integrated circuit microfabrication technology and ultra-precision machining technology.
在 MEMS 制造中， 通常会用到表面牺牲层技术， 即在形成微机 械结构的空腔或可活动的微结构过程中， 先在下层薄膜上用结构材料 淀积所需的各种特殊结构件， 再用化学刻蚀剂将此层薄膜腐蚀掉， 但 不损伤微结构件， 然后得到上层薄膜结构 （空腔或微结构件） 。 由于 被去掉的下层薄膜只起分离层作用， 故称其为牺牲层 （sacrificial layer )。 常用的结构材料有多晶硅、 单晶硅、 氮化硅、 氧化硅和金属 等， 常用牺牲层材料主要有氧化硅、 多晶硅、 光刻胶。 利用牺牲层可 制造出多种活动的微结构， 如微型桥、 悬臂梁及悬臂块等， 此外常被 用来制作敏感元件和执行元件， 如谐振式微型压力传感器、 谐振式微 型陀螺、 微型加速度计及微型马达、 各种制动器等。  In MEMS manufacturing, the surface sacrificial layer technology is usually used, that is, in the process of forming a micromechanical structure cavity or a movable microstructure, various special structural parts required for deposition on the underlying film are firstly deposited with structural materials. Then, the film is etched away with a chemical etchant, but the microstructure is not damaged, and then the upper film structure (cavity or microstructure) is obtained. Since the removed underlying film acts only as a separation layer, it is called a sacrificial layer. Commonly used structural materials are polysilicon, single crystal silicon, silicon nitride, silicon oxide, and metal. The commonly used sacrificial layer materials are mainly silicon oxide, polysilicon, and photoresist. The sacrificial layer can be used to fabricate a variety of moving microstructures, such as microbridges, cantilever beams, and cantilever blocks. It is also commonly used to make sensitive and actuator components, such as resonant miniature pressure sensors, resonant miniature gyros, and miniature acceleration. Take into account micro motors, various brakes, etc.
目前现有的牺牲层制作技术主要为湿法腐蚀和干法腐蚀， 这两种 技术对于牺牲层的腐蚀形貌均无法进行很好的控制， 难以符合特定 MEMS结构的要求。 发明内容  At present, the existing sacrificial layer fabrication techniques are mainly wet etching and dry etching. These two techniques cannot control the corrosion morphology of the sacrificial layer very well, and it is difficult to meet the requirements of a specific MEMS structure. Summary of the invention
鉴于现有技术的上述缺陷， 本发明提供了一种微机电系统 ( MEMS ) 结构的牺牲层湿法方法。 根据所述方法， 在所述牺牲层表 面施加增黏剂并且通过调整所述增黏剂的量来改变牺牲层与光刻胶 之间的黏附性， 进而以湿法腐蚀得到所需腐蚀形貌的牺牲层。 In view of the above drawbacks of the prior art, the present invention provides a MEMS system Sacrificial layer wet method for (MEMS) structures. According to the method, a tackifier is applied on the surface of the sacrificial layer and the adhesion between the sacrificial layer and the photoresist is changed by adjusting the amount of the tackifier, thereby obtaining the desired corrosion morphology by wet etching. Sacrifice layer.
在本发明的一些实施例中， 调整增黏剂的量包括对施加增黏剂的 牺牲层材料表面的黏附性进行检测并且根据黏附性检测结果和所需 的腐蚀形貌来调整增黏剂的量。  In some embodiments of the invention, adjusting the amount of tackifier includes detecting the adhesion of the surface of the sacrificial layer material to which the tackifier is applied and adjusting the tackifier based on the adhesion test results and the desired corrosion profile. the amount.
优选地， 通过检测水滴在施加增黏剂的牺牲层材料表面的接触角 来检测所述黏附性。  Preferably, the adhesion is detected by detecting the contact angle of water droplets on the surface of the sacrificial layer material to which the tackifier is applied.
在本发明的一些实施例中， 通过调整增黏剂的量使得检测到的接 触角为大约 65度以得到直线斜坡形的腐蚀形貌。  In some embodiments of the invention, the detected contact angle is about 65 degrees by adjusting the amount of tackifier to obtain a linear sloped corrosion profile.
在本发明的一些实施例中， 所述直线斜坡的角度大约为 40度。 在本发明的一些实施例中， 所述黏附剂为六曱基二硅氮曱烷， 并 且在所述牺牲层表面施加增黏剂包括将覆盖牺牲层材料的衬底置于 烘箱中加热以及在达到一定温度之后向烘箱中通入六曱基二硅氮曱 烷蒸气。  In some embodiments of the invention, the angle of the linear ramp is approximately 40 degrees. In some embodiments of the invention, the adhesion agent is hexamethyldisilazane, and applying a tackifier to the surface of the sacrificial layer comprises placing the substrate covering the sacrificial layer material in an oven for heating and After reaching a certain temperature, a hexamethylenedisilazane vapor is introduced into the oven.
优选地， 通过控制通入六曱基二硅氮曱烷蒸气的时间来调整增黏 剂的量。  Preferably, the amount of tackifier is adjusted by controlling the time of passage of the hexamethyldisilazane vapor.
在本发明的一些实施例中，采用 HF:NH4F=1:7的成分混合的緩沖 蚀刻液 ΒΟΕ(7:1)。  In some embodiments of the invention, a buffered etchant (7:1) mixed with a composition of HF:NH4F = 1:7 is employed.
优选地， 在所述緩沖蚀刻液 ΒΟΕ(7:1)中腐蚀的时间为 30分钟。 在本发明的一些实施例中， 所述牺牲层为二氧化硅， 并且所述二 氧化硅覆盖在硅片衬底上。  Preferably, the time of etching in the buffer etchant (7:1) is 30 minutes. In some embodiments of the invention, the sacrificial layer is silicon dioxide and the silicon dioxide is overlying the silicon wafer substrate.
在本发明的一些实施例中， 所述牺牲层的厚度大约为 6 μηι, 并且 通过化学气相沉积覆盖在硅片衬底上。  In some embodiments of the invention, the sacrificial layer has a thickness of about 6 μm and is overlying the silicon wafer substrate by chemical vapor deposition.
本发明还提供过了一种 机电系统（ MEMS )结构， 所述结构包 括根据前述任意一种方法所制作的牺牲层。  The present invention also provides an electromechanical system (MEMS) structure comprising a sacrificial layer fabricated according to any of the foregoing methods.
本发明所提供的方法通过在进行湿法腐蚀之前调节 MEMS 牺牲 层表面与光刻胶的黏附性来改变用湿法腐蚀工艺所形成的腐蚀形貌。 采用本发明所提供的方法，可以灵活地控制通过湿法腐蚀制作 MEMS 牺牲层时所得到的腐蚀形貌， 尤其是得到直线斜坡形的腐蚀形貌， 从 而使 MEMS结构中的后续层有良好的覆盖性。 该方法具有操作筒单、 低成本及效率高等优点。 附图说明 The method provided by the present invention changes the corrosion morphology formed by the wet etching process by adjusting the adhesion of the surface of the MEMS sacrificial layer to the photoresist prior to wet etching. By adopting the method provided by the invention, the corrosion morphology obtained by the wet etching of the MEMS sacrificial layer can be flexibly controlled, in particular, the corrosion morphology of the linear slope shape is obtained, so that the subsequent layers in the MEMS structure have good Coverage. The method has the advantages of single operation, low cost and high efficiency. DRAWINGS
以下将结合附图和实施例， 对本发明的技术方案作进一步的详细 描述。  The technical solutions of the present invention will be further described in detail below with reference to the accompanying drawings and embodiments.
图 1是根据本发明的一个实施例的 MEMS结构的牺牲层湿法腐 蚀方法的流程图。  1 is a flow chart of a sacrificial layer wet etching method for a MEMS structure in accordance with an embodiment of the present invention.
图 2是通过本发明所提供的方法得到的 MEMS结构的牺牲层的 示意图。 具体实施方式  2 is a schematic illustration of a sacrificial layer of a MEMS structure obtained by the method provided by the present invention. detailed description
为使本发明的上述目的、 特征和优点更加明显易懂， 以下结合附 图和具体实施例进一步详细描述本发明。 需要说明的是， 附图中的各 结构只是示意性的而不是限定性的， 以使本领域普通技术人员能够最 佳地理解本发明的原理， 其不一定按比例绘制。  The above described objects, features, and advantages of the present invention will become more apparent from the following detailed description. It is to be understood that in the claims
图 1是根据本发明的一个实施例的 MEMS结构的牺牲层湿法腐 蚀方法的流程图。 在该实施例中， 牺牲层为二氧化硅层， 其覆盖在硅 片衬底上。 本领域的技术人员应理解的是， 该实施例仅是示意性的， 本发明所提供的湿法腐蚀方法还可以适用于其他类似的材料和结构。  1 is a flow chart of a sacrificial layer wet etching method for a MEMS structure in accordance with an embodiment of the present invention. In this embodiment, the sacrificial layer is a silicon dioxide layer overlying the silicon substrate. It should be understood by those skilled in the art that the embodiment is merely illustrative, and the wet etching method provided by the present invention can be applied to other similar materials and structures.
首先， 在步骤 S101中提供覆盖二氧化硅的硅片衬底。 在实践中， 二氧化硅的厚度一般可以大约为 6~12μηι, 在一定条件下甚至可以达 到 20μηι。可以例如通过化学气相沉积 PECVD在硅片衬底上覆盖二氧 化硅层。  First, a silicon wafer substrate covered with silicon dioxide is provided in step S101. In practice, the thickness of the silica can generally be about 6~12μηι, and even under certain conditions, it can reach 20μηι. The silicon dioxide layer can be overlaid on the silicon wafer substrate, for example by chemical vapor deposition PECVD.
在步骤 S102 中， 在二氧化硅表面施加增黏剂。 在半导体器件制 造过程中， 增黏剂被广泛应用于光刻的涂胶工艺， 它的使用能够大大 改善光刻胶与基底表面的黏附性。 在一个实施例中， 所施加的增黏剂 可以是 HMDS ( Hexamethyldisilazane ) , 其化学全称是六曱基二硅氮 曱烷。 In step S102, a tackifier is applied to the surface of the silica. In the manufacturing process of semiconductor devices, tackifiers are widely used in photolithography coating processes, and their use can be greatly Improve the adhesion of the photoresist to the surface of the substrate. In one embodiment, the tackifier applied may be HMDS (Hexamethyldisilazane), the chemical name of which is hexamethylenedisilazane.
可以通过多种方式将 HMDS增黏剂施加在二氧化硅表面，其中包 括蒸气式涂布法。 在蒸气式涂布过程中， 可以将覆盖二氧化硅的硅片 衬底置于烘箱中加热并且在达到一定温度之后向烘箱中通入 HMDS 蒸气。 将 HMDS施加在二氧化硅表面后， 通过在烘箱中进行烘烤， 可 生成以硅氮烷为主体的化合物。 作为一种表面活性剂， 其可以改变氧 化层表面的亲水性。通过调整 HMDS的用量可以将二氧化硅表面的粘 附性控制在所需的水平。  The HMDS tackifier can be applied to the silica surface in a variety of ways, including vapor coating. In the vapor coating process, the silicon dioxide-coated silicon wafer substrate can be placed in an oven for heating and the HMDS vapor is introduced into the oven after reaching a certain temperature. After the HMDS is applied to the surface of the silica, it is possible to form a compound mainly composed of silazane by baking in an oven. As a surfactant, it can change the hydrophilicity of the surface of the oxide layer. The adhesion of the silica surface can be controlled to the desired level by adjusting the amount of HMDS.
进而在步骤 S103中， 检测施加增黏剂的二氧化硅表面的黏附性。 例如， 可以通过检测水滴在施加增黏剂的二氧化硅表面的接触角来检 测黏附性， 所述接触角如图 2中以 »所标识的那样。 一般而言， 黏附 性强的表面亲水性较差， 而黏附性较差的表面亲水性较强。 相应地， 水滴在偏亲水性的表面上所形成的接触角较小， 而在偏疏水性的表面 上所形成的接触角较大。 在实践中发现， 牺牲层表面与湿法腐蚀中所 用的光刻胶之间的黏附性强弱对最终所得到的腐蚀形貌有很大的影 响。 因此， 可以通过在涂胶之前检测牺牲层表面的黏附性来判断该黏 附性是否能够有利于得到所需要的腐蚀形貌， 例如直线斜坡形。  Further, in step S103, the adhesion of the surface of the silica to which the tackifier is applied is detected. For example, the adhesion can be detected by detecting the contact angle of water droplets on the surface of the silica to which the tackifier is applied, as indicated by < In general, the surface with strong adhesion is less hydrophilic, while the surface with poor adhesion is more hydrophilic. Accordingly, the contact angle formed by the water droplets on the hydrophilic surface is small, and the contact angle formed on the surface which is hydrophobic is large. It has been found in practice that the adhesion between the surface of the sacrificial layer and the photoresist used in wet etching has a large effect on the resulting corrosion morphology. Therefore, whether or not the adhesion can be favored to obtain a desired corrosion topography such as a linear slope shape can be judged by detecting the adhesion of the surface of the sacrificial layer before the application of the glue.
在步骤 S104中，根据步骤 S103中的黏附性检测结果和所需的腐 蚀形貌来调整增黏剂的量。 在实践中， 可以通过大量实验预先确定水 滴检测的接触角大小与最终可能得到的腐蚀形貌之间的关系， 也即黏 附性与腐蚀形貌之间的关系。 由此， 在每次检测到水滴接触角之后根 据检测结果判断是否需要调整增黏剂的用量以得到所需的腐蚀形貌。 进一步地， 可以首先对少量的测试片执行上述步骤以确定与所需腐蚀 形貌对应的增黏剂用量， 从而在量产时将增黏剂用量控制在预定水平 以确保得到所需的腐蚀形貌。  In step S104, the amount of the tackifier is adjusted in accordance with the result of the adhesion test in step S103 and the desired corrosion profile. In practice, the relationship between the contact angle of the water droplet detection and the resulting corrosion morphology, that is, the relationship between adhesion and corrosion morphology, can be predetermined by a large number of experiments. Thus, it is judged whether or not the amount of the tackifier needs to be adjusted to obtain a desired corrosion profile after each detection of the contact angle of the water droplets. Further, the above steps may be performed on a small number of test pieces first to determine the amount of tackifier corresponding to the desired corrosion profile, thereby controlling the amount of tackifier to a predetermined level during mass production to ensure the desired corrosion shape is obtained. appearance.
在使用 HMDS的情况下， 可以通过控制向烘箱中通入 HMDS蒸 气的时间来调整增黏剂的量。 In the case of HMDS, it is possible to control the introduction of HMDS into the oven. The time of the gas to adjust the amount of tackifier.
在步骤 S105 中， 将光刻胶涂布在施加增黏剂的二氧化硅表面， 并且进而， 在步骤 S106 中执行其他常规的湿法腐蚀步骤， 包括例如 曝光、 去胶、 化学蚀刻等等。 优选地， 在本发明的方法中可以采用 HF:NH4F=1:7的成分混合的緩沖蚀刻液 ΒΟΕ(7:1)。 In step S105, a photoresist is applied to the surface of the silica to which the tackifier is applied, and further, other conventional wet etching steps are performed in step S106, including, for example, exposure, degumming, chemical etching, and the like. Preferably, a buffered etchant (7:1) mixed with a component of HF:NH 4 F=1:7 can be used in the process of the invention.
图 2是通过本发明所提供的方法得到的 MEMS结构的牺牲层的 示意图。在该实施例中，通过调整诸如 HMDS的增黏剂的量使得水滴 检测所得到的接触角 »为大约 65度。 在这种情况下， 牺牲层表面的 亲水性程度更高， 与光刻胶之间的黏附性相对较差。 在随后的湿法腐 蚀工艺中，采用 HF:NH4F=1:7的成分混合的緩沖蚀刻液 ΒΟΕ(7:1)进行 腐蚀大约 30 分钟之后， 就可以得到直线斜坡形的腐蚀形貌， 如图 2 下部所示。 直线斜坡的角度 ^大约可以为 40度。 在 MEMS结构中， 通常需要进而在牺牲层上形成诸如氮化硅的感知层以感知动能、 热能 等。 图 2所示的直线斜坡形的牺牲层腐蚀形貌可以使得感知层材料在 其上具有良好的覆盖性。 2 is a schematic illustration of a sacrificial layer of a MEMS structure obtained by the method provided by the present invention. In this embodiment, the contact angle of the water droplet detection is about 65 degrees by adjusting the amount of the tackifier such as HMDS. In this case, the surface of the sacrificial layer is more hydrophilic and the adhesion to the photoresist is relatively poor. In the subsequent wet etching process, a corrosion gradient of a linear slope is obtained after etching for about 30 minutes using a buffer etchant 7 (7:1) mixed with HF:NH 4 F=1:7. As shown in the lower part of Figure 2. The angle of the straight slope can be approximately 40 degrees. In MEMS structures, it is often desirable to form a sensing layer such as silicon nitride on the sacrificial layer to sense kinetic energy, thermal energy, and the like. The linear slope-shaped sacrificial layer corrosion morphology shown in Figure 2 allows the sensing layer material to have good coverage thereon.
以上列举了若干具体实施例来详细阐明本发明， 这些个例仅供说 明本发明的原理及其实施方式之用， 而非对本发明的限制， 在不脱离 本发明的精神和范围的情况下， 本领域的普通技术人员还可以做出各 种变形和改进。 因此所有等同的技术方案均应属于本发明的范畴并为 本发明的各项权利要求所限定。  The present invention has been described in detail by reference to the preferred embodiments of the present invention, which are not intended to limit the scope of the invention. Various modifications and improvements can be made by those skilled in the art. All equivalent technical solutions are therefore intended to be within the scope of the invention and are defined by the claims of the invention.

Claims

权利要求 Rights request
1. 一种 机电系统结构的牺牲层湿法腐蚀方法， 其特征在于， 在 所述牺牲层表面施加增黏剂并且通过调整所述增黏剂的量来改变牺 牲层与光刻胶之间的黏附性， 进而以湿法腐蚀得到所需腐蚀形貌的牺 牲层。 1. A sacrificial layer wet etching method for an electromechanical system structure, characterized in that a tackifier is applied to the surface of the sacrificial layer and the amount of the tackifier is adjusted to change the relationship between the sacrificial layer and the photoresist. Adhesion, and then use wet etching to obtain the sacrificial layer with the desired corrosion morphology.
2. 如权利要求 1所述的方法， 其特征在于， 调整所述增黏剂的量 包括对施加增黏剂的牺牲层表面的黏附性进行检测并且根据黏附性 检测结果和所需的腐蚀形貌来调整增黏剂的量。 2. The method of claim 1, wherein adjusting the amount of the tackifier includes detecting the adhesion of the surface of the sacrificial layer to which the tackifier is applied and based on the adhesion detection results and the required corrosion shape. to adjust the amount of tackifier.
3. 如权利要求 2所述的方法， 其特征在于， 通过检测水滴在施加 增黏剂的牺牲层表面的接触角来检测所述黏附性。 3. The method of claim 2, wherein the adhesion is detected by detecting the contact angle of water droplets on the surface of the sacrificial layer to which the adhesion promoter is applied.
4. 如权利要求 3所述的方法， 其特征在于， 通过调整增黏剂的量 使得检测到的接触角为大约 65度以得到直线斜坡形的腐蚀形貌。 4. The method of claim 3, wherein a linear slope-shaped corrosion morphology is obtained by adjusting the amount of tackifier so that the detected contact angle is approximately 65 degrees.
5. 如权利要求 4所述的方法， 其特征在于， 所述直线斜坡的角度 大约为 40度。 5. The method of claim 4, wherein the angle of the linear slope is approximately 40 degrees.
6. 如权利要求 2所述的方法， 其特征在于， 所述黏附剂为六曱基 二硅氮曱烷， 并且在所述牺牲层表面施加增黏剂包括将覆盖牺牲层材 料的衬底置于烘箱中加热以及在达到一定温度之后向烘箱中通入六 曱基二硅氮曱烷蒸气。 6. The method of claim 2, wherein the adhesive is hexamethyldisilazine, and applying the adhesion promoter on the surface of the sacrificial layer includes placing a substrate covering the sacrificial layer material. Heating in an oven and passing hexamethyldisilazine vapor into the oven after reaching a certain temperature.
7. 如权利要求 6所述的方法， 其特征在于， 通过控制通入六曱基 二硅氮曱烷蒸气的时间来调整增黏剂的量。 7. The method of claim 6, wherein the amount of tackifier is adjusted by controlling the time during which hexamethyldisilazine vapor is introduced.
8. 如权利要求 2 所述的方法， 其特征在于， 采用 HF:NH4F=1 :7 的成分混合的緩沖蚀刻液 ΒΟΕ(7: 1)。 8. The method according to claim 2, characterized in that a buffer etching solution BOOE (7:1) with a composition of HF: NH4F =1:7 is used.
9. 如权利要求 8 所述的方法， 其特征在于， 在所述緩沖蚀刻液 ΒΟΕ(7: 1)中腐蚀的时间为 30分钟。 9. The method of claim 8, wherein the etching time in the buffer etching solution BOOE (7:1) is 30 minutes.
10. 如权利要求 1所述的方法， 其特征在于， 所述牺牲层为二氧 化硅， 并且所述二氧化硅覆盖在硅片衬底上。 10. The method of claim 1, wherein the sacrificial layer is silicon dioxide, and the silicon dioxide covers the silicon wafer substrate.
11. 如权利要求 10所述的方法， 其特征在于， 所述牺牲层的厚度 大约为 6~12 μηι, 并且通过化学气相沉积覆盖在硅片衬底上。 11. The method of claim 10, wherein the sacrificial layer has a thickness of approximately 6 to 12 μm, and is covered on the silicon wafer substrate through chemical vapor deposition.
12. 一种微机电系统结构， 其特征在于， 所述结构包括根据权利 要求 1-11中任意一种方法所制作的牺牲层。 12. A microelectromechanical system structure, characterized in that the structure includes a sacrificial layer made according to any one of the methods of claims 1-11.
PCT/CN2013/078525 2012-07-10 2013-06-29 Micro-electro-mechanical systems structure and sacrificial layer wet etching method thereof WO2014008819A1 (en)

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