WO2014007680A3 - Three-dimensionally structured semiconductor substrate for a field emission cathode, method for producing same, and field emission cathode - Google Patents

Three-dimensionally structured semiconductor substrate for a field emission cathode, method for producing same, and field emission cathode Download PDF

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Publication number
WO2014007680A3
WO2014007680A3 PCT/RU2013/000563 RU2013000563W WO2014007680A3 WO 2014007680 A3 WO2014007680 A3 WO 2014007680A3 RU 2013000563 W RU2013000563 W RU 2013000563W WO 2014007680 A3 WO2014007680 A3 WO 2014007680A3
Authority
WO
WIPO (PCT)
Prior art keywords
field emission
substrate
emission cathode
etching
dimensionally structured
Prior art date
Application number
PCT/RU2013/000563
Other languages
French (fr)
Russian (ru)
Other versions
WO2014007680A2 (en
Inventor
Станислав Александрович ЕВЛАШИН
Александр Турсунович РАХИМОВ
Антон Сергеевич СТЕПАНОВ
Андрей Александрович ПИЛЕВСКИЙ
Виктор Александрович КРИВЧЕНКО
Павел Владимирович ПАЩЕНКО
Юрий Александрович МАНКЕЛЕВИЧ
Александр Юрьевич ПОРОЙКОВ
Original Assignee
Evlashin Stanislav Aleksandrovich
Rakhimov Alexander Tursunovich
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Evlashin Stanislav Aleksandrovich, Rakhimov Alexander Tursunovich filed Critical Evlashin Stanislav Aleksandrovich
Publication of WO2014007680A2 publication Critical patent/WO2014007680A2/en
Publication of WO2014007680A3 publication Critical patent/WO2014007680A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes

Landscapes

  • Cold Cathode And The Manufacture (AREA)
  • Weting (AREA)

Abstract

The invention relates to the art of electrical engineering. The method for producing a three-dimensionally structured substrate for a field emission cathode is characterized in that the surface is prepared by prewashing the substrate to remove impurities, and the portion of the surface that is not subject to etching is chemically and mechanically protected while the portion which is to be etched is left open. The substrate is placed in a tray with an etching electrolyte, and photoelectrochemical etching is carried out within the boundaries of that portion of the surface identified for the subsequent deposition of a field emission carbon film. Furthermore, the photochemical etching is carried out under conditions which enable the formation, on the surface of the substrate, of micropoints or a quasi-regular cell cluster structure formed as an accumulation of cone-shaped channels with a minimum aspect ratio of 2. The three-dimensionally structured field emission cathode substrate is made from p-type crystalline silicon having a conductivity of 1 to 8 Ω•cm. The field emission cathode comprises a substrate with a nanostructured carbon film deposited thereon.
PCT/RU2013/000563 2012-07-04 2013-07-03 Three-dimensionally structured semiconductor substrate for a field emission cathode, means for producing same, and field emission cathode WO2014007680A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU2012127765/07A RU2524353C2 (en) 2012-07-04 2012-07-04 Three-dimensionally structured semiconductor substrate for field-emission cathode, method for its obtaining, and field-emission cathode
RU2012127765 2012-07-04

Publications (2)

Publication Number Publication Date
WO2014007680A2 WO2014007680A2 (en) 2014-01-09
WO2014007680A3 true WO2014007680A3 (en) 2014-04-03

Family

ID=49882560

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/RU2013/000563 WO2014007680A2 (en) 2012-07-04 2013-07-03 Three-dimensionally structured semiconductor substrate for a field emission cathode, means for producing same, and field emission cathode

Country Status (2)

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RU (1) RU2524353C2 (en)
WO (1) WO2014007680A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3669888A1 (en) 2018-12-20 2020-06-24 Gambro Lundia AB Extracorporeal devices for methods for treating diseases associated with anti-neutrophil cytoplasmic antibodies
CN113543821A (en) 2019-03-06 2021-10-22 甘布罗伦迪亚股份公司 Blood treatment device comprising alkaline phosphatase

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5544772A (en) * 1995-07-25 1996-08-13 Galileo Electro-Optics Corporation Fabrication of a microchannel plate from a perforated silicon
RU2074444C1 (en) * 1994-07-26 1997-02-27 Евгений Инвиевич Гиваргизов Self-emitting cathode and device which uses it
EP1003196A1 (en) * 1998-11-19 2000-05-24 Nec Corporation Carbon material, method for manufacturing the same material, field-emission type cold cathode using the same material and method for manufacturing the same cathode
RU2194328C2 (en) * 1998-05-19 2002-12-10 ООО "Высокие технологии" Cold-emission film cathode and its production process

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2187860C2 (en) * 1997-07-01 2002-08-20 Галдецкий Анатолий Васильевич Autoemission cathode and electron device built on its base ( variants )

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2074444C1 (en) * 1994-07-26 1997-02-27 Евгений Инвиевич Гиваргизов Self-emitting cathode and device which uses it
US5544772A (en) * 1995-07-25 1996-08-13 Galileo Electro-Optics Corporation Fabrication of a microchannel plate from a perforated silicon
RU2194328C2 (en) * 1998-05-19 2002-12-10 ООО "Высокие технологии" Cold-emission film cathode and its production process
EP1003196A1 (en) * 1998-11-19 2000-05-24 Nec Corporation Carbon material, method for manufacturing the same material, field-emission type cold cathode using the same material and method for manufacturing the same cathode

Also Published As

Publication number Publication date
WO2014007680A2 (en) 2014-01-09
RU2012127765A (en) 2014-01-10
RU2524353C2 (en) 2014-07-27

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