WO2014006828A1 - Novel diphosphonium salt and method for producing same - Google Patents
Novel diphosphonium salt and method for producing same Download PDFInfo
- Publication number
- WO2014006828A1 WO2014006828A1 PCT/JP2013/003774 JP2013003774W WO2014006828A1 WO 2014006828 A1 WO2014006828 A1 WO 2014006828A1 JP 2013003774 W JP2013003774 W JP 2013003774W WO 2014006828 A1 WO2014006828 A1 WO 2014006828A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- bis
- phosphonium
- hydroxyphenyl
- biphenyl
- benzene
- Prior art date
Links
- 150000003839 salts Chemical class 0.000 title claims abstract description 88
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000002216 antistatic agent Substances 0.000 claims abstract description 11
- -1 hydroxyphenyl halide Chemical class 0.000 claims description 323
- 238000006243 chemical reaction Methods 0.000 claims description 56
- VURFVHCLMJOLKN-UHFFFAOYSA-N diphosphane Chemical compound PP VURFVHCLMJOLKN-UHFFFAOYSA-N 0.000 claims description 40
- 125000003118 aryl group Chemical group 0.000 claims description 15
- 150000002816 nickel compounds Chemical class 0.000 claims description 8
- 150000002900 organolithium compounds Chemical class 0.000 claims description 7
- 229910052736 halogen Inorganic materials 0.000 claims description 6
- 125000001424 substituent group Chemical group 0.000 claims description 4
- 229910001413 alkali metal ion Inorganic materials 0.000 claims description 3
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 3
- 125000005843 halogen group Chemical group 0.000 claims description 2
- 229920005989 resin Polymers 0.000 abstract description 18
- 239000011347 resin Substances 0.000 abstract description 18
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 abstract description 8
- 229920005668 polycarbonate resin Polymers 0.000 abstract description 7
- 239000004431 polycarbonate resin Substances 0.000 abstract description 7
- 239000003822 epoxy resin Substances 0.000 abstract description 6
- 229920000647 polyepoxide Polymers 0.000 abstract description 6
- 229920001187 thermosetting polymer Polymers 0.000 abstract description 5
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 abstract description 2
- 150000001768 cations Chemical group 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 description 440
- 125000004203 4-hydroxyphenyl group Chemical group [H]OC1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 215
- XYFCBTPGUUZFHI-UHFFFAOYSA-O phosphonium Chemical compound [PH4+] XYFCBTPGUUZFHI-UHFFFAOYSA-O 0.000 description 207
- ZXMGHDIOOHOAAE-UHFFFAOYSA-N 1,1,1-trifluoro-n-(trifluoromethylsulfonyl)methanesulfonamide Chemical group FC(F)(F)S(=O)(=O)NS(=O)(=O)C(F)(F)F ZXMGHDIOOHOAAE-UHFFFAOYSA-N 0.000 description 85
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- 239000002904 solvent Substances 0.000 description 28
- 239000000243 solution Substances 0.000 description 19
- 150000001649 bromium compounds Chemical group 0.000 description 17
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 15
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- 150000004694 iodide salts Chemical group 0.000 description 13
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- 125000003261 o-tolyl group Chemical group [H]C1=C([H])C(*)=C(C([H])=C1[H])C([H])([H])[H] 0.000 description 12
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- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 10
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- 239000013078 crystal Substances 0.000 description 9
- 125000000040 m-tolyl group Chemical group [H]C1=C([H])C(*)=C([H])C(=C1[H])C([H])([H])[H] 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 8
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- KTQDYGVEEFGIIL-UHFFFAOYSA-N n-fluorosulfonylsulfamoyl fluoride Chemical group FS(=O)(=O)NS(F)(=O)=O KTQDYGVEEFGIIL-UHFFFAOYSA-N 0.000 description 8
- 238000005160 1H NMR spectroscopy Methods 0.000 description 7
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- MZRVEZGGRBJDDB-UHFFFAOYSA-N N-Butyllithium Chemical compound [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 6
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 6
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 239000011541 reaction mixture Substances 0.000 description 6
- CEUWWRFKARIADH-UHFFFAOYSA-N 1,1'-biphenyl;diphenylphosphane Chemical group C1=CC=CC=C1C1=CC=CC=C1.C=1C=CC=CC=1PC1=CC=CC=C1 CEUWWRFKARIADH-UHFFFAOYSA-N 0.000 description 5
- 125000004860 4-ethylphenyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1*)C([H])([H])C([H])([H])[H] 0.000 description 5
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- 230000000052 comparative effect Effects 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- BEZDDPMMPIDMGJ-UHFFFAOYSA-N pentamethylbenzene Chemical group CC1=CC(C)=C(C)C(C)=C1C BEZDDPMMPIDMGJ-UHFFFAOYSA-N 0.000 description 5
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 5
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 5
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- RXYDGCOWPVVMFA-UHFFFAOYSA-N [I-].C1=CC=CC=C1.OC1=CC=C(C=C1)[PH+](C1=CC=C(C=C1)CCCCC)C1=CC=C(C=C1)CCCCC Chemical compound [I-].C1=CC=CC=C1.OC1=CC=C(C=C1)[PH+](C1=CC=C(C=C1)CCCCC)C1=CC=C(C=C1)CCCCC RXYDGCOWPVVMFA-UHFFFAOYSA-N 0.000 description 1
- BBBQYPPFUMFPRM-UHFFFAOYSA-N [I-].C1=CC=CC=C1.OC1=CC=C(C=C1)[PH+](C1=CC=C(C=C1)CCCCCC)C1=CC=C(C=C1)CCCCCC Chemical compound [I-].C1=CC=CC=C1.OC1=CC=C(C=C1)[PH+](C1=CC=C(C=C1)CCCCCC)C1=CC=C(C=C1)CCCCCC BBBQYPPFUMFPRM-UHFFFAOYSA-N 0.000 description 1
- OQJDESMPUDHZQF-UHFFFAOYSA-N [I-].C1=CC=CC=C1.OC1=CC=C(C=C1)[PH+](C=1C=C(C=CC1)C)C=1C=C(C=CC1)C Chemical compound [I-].C1=CC=CC=C1.OC1=CC=C(C=C1)[PH+](C=1C=C(C=CC1)C)C=1C=C(C=CC1)C OQJDESMPUDHZQF-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000002178 anthracenyl group Chemical group C1(=CC=CC2=CC3=CC=CC=C3C=C12)* 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 125000000732 arylene group Chemical group 0.000 description 1
- ZUENHQDDMWOOQE-UHFFFAOYSA-N benzene;diphenylphosphane Chemical compound C1=CC=CC=C1.C=1C=CC=CC=1PC1=CC=CC=C1 ZUENHQDDMWOOQE-UHFFFAOYSA-N 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- RZSMSXXOYMFIKN-UHFFFAOYSA-N bromo(diphenyl)phosphane Chemical compound C=1C=CC=CC=1P(Br)C1=CC=CC=C1 RZSMSXXOYMFIKN-UHFFFAOYSA-N 0.000 description 1
- NBRSVRBGWFULSG-UHFFFAOYSA-N bromo-bis(2-methylphenyl)phosphane Chemical compound CC1=CC=CC=C1P(Br)C1=CC=CC=C1C NBRSVRBGWFULSG-UHFFFAOYSA-N 0.000 description 1
- KQCBLYDIRGVDSR-UHFFFAOYSA-N bromo-bis(4-methylphenyl)phosphane Chemical compound C1=CC(C)=CC=C1P(Br)C1=CC=C(C)C=C1 KQCBLYDIRGVDSR-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- ZSTLQYDNYDFAOQ-UHFFFAOYSA-N chloro-(2-methylphenyl)-phenylphosphane Chemical compound CC1=CC=CC=C1P(Cl)C1=CC=CC=C1 ZSTLQYDNYDFAOQ-UHFFFAOYSA-N 0.000 description 1
- ZBZUIQWELHLBNE-UHFFFAOYSA-N chloro-(3-methylphenyl)-phenylphosphane Chemical compound CC1=CC=CC(P(Cl)C=2C=CC=CC=2)=C1 ZBZUIQWELHLBNE-UHFFFAOYSA-N 0.000 description 1
- ZCABTUOKUWHGRJ-UHFFFAOYSA-N chloro-(4-methylphenyl)-phenylphosphane Chemical compound C1=CC(C)=CC=C1P(Cl)C1=CC=CC=C1 ZCABTUOKUWHGRJ-UHFFFAOYSA-N 0.000 description 1
- KAAGXBGJRWFWPT-UHFFFAOYSA-N chloro-bis(2-methylphenyl)phosphane Chemical compound CC1=CC=CC=C1P(Cl)C1=CC=CC=C1C KAAGXBGJRWFWPT-UHFFFAOYSA-N 0.000 description 1
- QBCUUCZOCXEZSH-UHFFFAOYSA-N chloro-bis(3-methylphenyl)phosphane Chemical compound CC1=CC=CC(P(Cl)C=2C=C(C)C=CC=2)=C1 QBCUUCZOCXEZSH-UHFFFAOYSA-N 0.000 description 1
- BJBXRRHIBSXGLF-UHFFFAOYSA-N chloro-bis(4-methylphenyl)phosphane Chemical compound C1=CC(C)=CC=C1P(Cl)C1=CC=C(C)C=C1 BJBXRRHIBSXGLF-UHFFFAOYSA-N 0.000 description 1
- GPAYUJZHTULNBE-UHFFFAOYSA-N diphenylphosphine Chemical compound C=1C=CC=CC=1PC1=CC=CC=C1 GPAYUJZHTULNBE-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- BLHLJVCOVBYQQS-UHFFFAOYSA-N ethyllithium Chemical compound [Li]CC BLHLJVCOVBYQQS-UHFFFAOYSA-N 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-M iodide Chemical compound [I-] XMBWDFGMSWQBCA-UHFFFAOYSA-M 0.000 description 1
- QCYZGYHHITWIFQ-UHFFFAOYSA-N iodo(diphenyl)phosphane Chemical compound C=1C=CC=CC=1P(I)C1=CC=CC=C1 QCYZGYHHITWIFQ-UHFFFAOYSA-N 0.000 description 1
- XXAXFIBHVQAXNF-UHFFFAOYSA-N iodo-bis(4-methylphenyl)phosphane Chemical compound C1=CC(C)=CC=C1P(I)C1=CC=C(C)C=C1 XXAXFIBHVQAXNF-UHFFFAOYSA-N 0.000 description 1
- SNHMUERNLJLMHN-UHFFFAOYSA-N iodobenzene Chemical compound IC1=CC=CC=C1 SNHMUERNLJLMHN-UHFFFAOYSA-N 0.000 description 1
- QAXHWUAAPKHMGA-UHFFFAOYSA-N iodophosphane Chemical compound IP QAXHWUAAPKHMGA-UHFFFAOYSA-N 0.000 description 1
- GKQPCPXONLDCMU-CCEZHUSRSA-N lacidipine Chemical compound CCOC(=O)C1=C(C)NC(C)=C(C(=O)OCC)C1C1=CC=CC=C1\C=C\C(=O)OC(C)(C)C GKQPCPXONLDCMU-CCEZHUSRSA-N 0.000 description 1
- 150000002642 lithium compounds Chemical class 0.000 description 1
- WGOPGODQLGJZGL-UHFFFAOYSA-N lithium;butane Chemical compound [Li+].CC[CH-]C WGOPGODQLGJZGL-UHFFFAOYSA-N 0.000 description 1
- YNXURHRFIMQACJ-UHFFFAOYSA-N lithium;methanidylbenzene Chemical compound [Li+].[CH2-]C1=CC=CC=C1 YNXURHRFIMQACJ-UHFFFAOYSA-N 0.000 description 1
- SZAVVKVUMPLRRS-UHFFFAOYSA-N lithium;propane Chemical compound [Li+].C[CH-]C SZAVVKVUMPLRRS-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- DVSDBMFJEQPWNO-UHFFFAOYSA-N methyllithium Chemical compound C[Li] DVSDBMFJEQPWNO-UHFFFAOYSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- IPLJNQFXJUCRNH-UHFFFAOYSA-L nickel(2+);dibromide Chemical compound [Ni+2].[Br-].[Br-] IPLJNQFXJUCRNH-UHFFFAOYSA-L 0.000 description 1
- BFSQJYRFLQUZKX-UHFFFAOYSA-L nickel(ii) iodide Chemical compound I[Ni]I BFSQJYRFLQUZKX-UHFFFAOYSA-L 0.000 description 1
- NSVFPFUROXFZJS-UHFFFAOYSA-N nickel;hexahydrate Chemical compound O.O.O.O.O.O.[Ni] NSVFPFUROXFZJS-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- NHKJPPKXDNZFBJ-UHFFFAOYSA-N phenyllithium Chemical compound [Li]C1=CC=CC=C1 NHKJPPKXDNZFBJ-UHFFFAOYSA-N 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 239000012744 reinforcing agent Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 description 1
- BRKFQVAOMSWFDU-UHFFFAOYSA-M tetraphenylphosphanium;bromide Chemical compound [Br-].C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 BRKFQVAOMSWFDU-UHFFFAOYSA-M 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/02—Phosphorus compounds
- C07F9/28—Phosphorus compounds with one or more P—C bonds
- C07F9/54—Quaternary phosphonium compounds
- C07F9/5449—Polyphosphonium compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
- C08G59/688—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used containing phosphorus
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/49—Phosphorus-containing compounds
- C08K5/50—Phosphorus bound to carbon only
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/16—Anti-static materials
Definitions
- the present invention relates to a novel diphosphonium salt, a production method thereof, and an antistatic agent and a curing accelerator containing the diphosphonium salt.
- tetraphenylphosphonium bistrifluoromethanesulfonylimide
- resin antistatic agent see Patent Document 1
- tetraphenylphosphonium bromide is known as a curing accelerator (curing catalyst) for thermosetting resins such as epoxy resins (see Patent Document 2).
- the present invention provides a novel diphosphonium salt that can impart excellent antistatic performance to a resin and is an excellent curing accelerator for a thermosetting resin, a method for producing the same, and a charge containing the diphosphonium salt
- the present invention relates to an inhibitor and a curing accelerator.
- the present inventors diligently studied to solve the above problems. As a result, it was found that the diphosphonium salts represented by the formulas (1) and (3) can impart excellent antistatic performance to the resin. Further, the inventors have found that the diphosphonium salt can be used as an excellent curing accelerator for thermosetting resins, and have completed the present invention.
- R 1 and R 2 may be the same or different from each other, and each represents an aryl group which may have a substituent.
- Y represents the formula (2):
- diphosphonium salt (1) Diphosphonium salt (hereinafter referred to as diphosphonium salt (1)), formula (3):
- the present invention relates to a method, and an antistatic agent and a curing accelerator containing the diphosphonium salt.
- the diphosphonium salts (1) and (3) of the present invention can impart excellent antistatic properties to the resin. Further, they are useful compounds because they can be used as excellent curing accelerators for thermosetting resins.
- R 1 and R 2 may be the same as or different from each other, and each represents an aryl group that may have a substituent.
- the aryl group which may have a substituent for example, phenyl group, 2-tolyl group, 3-tolyl group, 4-tolyl group, 2,3-xylyl group, 2,4-xylyl group, 2,5 -Xylyl group, 2,6-xylyl group, 3,4-xylyl group, 3,5-xylyl group, 2,3,4-trimethylphenyl group, 2,3,5-trimethylphenyl group, 2,3,6 -Trimethylphenyl group, 2,4,6-trimethylphenyl group, 3,4,5-trimethylphenyl group, 2,3,4,5-tetramethylphenyl group, 2,3,4,6-tetramethylphenyl group 2,3,5,6-tetramethylphenyl group, pentamethylphenyl group, ethylphenyl group, n-propylphenyl group, pent
- n is an integer of 1 to 3
- the arylene group include a phenylene group, a biphenyl group, and a terphenyl group. Among them, a biphenyl group is preferable.
- a ⁇ represents BF 4 ⁇ , PF 6 ⁇ , (FSO 2 ) 2 N — or (CF 3 SO 2 ) 2 N — . Among them (CF 3 SO 2) 2 N - is preferred.
- X ⁇ represents a halogen ion.
- the halogen ion include chlorine ion, bromine ion and iodine ion. Among them, chlorine ion or bromine ion is preferable.
- 1,1′-bis (4-hydroxyphenyldiphenylphosphonium) -4,4′-terphenyl chloride 1,1′-bis ⁇ P- (4-hydroxyphenyl) -P, P′-di (2- Tolyl) phosphonium ⁇ -4,4′-terphenyl chloride, 1,1′-bis ⁇ P- (4-hydroxyphenyl) -P, P′-di (3-tolyl) phosphonium ⁇ -4,4′- Terphenyl chloride, 1,1′-bis ⁇ P- (4-hydroxyphenyl) -P, P′-di (4-tolyl) phosphonium ⁇ -4,4′-terphenyl chloride, 1,1′- Bis ⁇ P- (4-hydroxyphenyl) -P, P'-di (2,3-xylyl) phosphonium ⁇ -4,4'-terphenyl chloride, 1,1'-bis ⁇ P- (4-hydroxy Phenyl) -P, P'-
- 1,1′-bis (4-hydroxyphenyldiphenylphosphonium) -4,4′-terphenyl iodide 1,1′-bis ⁇ P- (4-hydroxyphenyl) -P, P′-di (2- Tolyl) phosphonium ⁇ -4,4′-terphenyl iodide, 1,1′-bis ⁇ P- (4-hydroxyphenyl) -P, P′-di (3-tolyl) phosphonium ⁇ -4,4′- Terphenyl iodide, 1,1′-bis ⁇ P- (4-hydroxyphenyl) -P, P′-di (4-tolyl) phosphonium ⁇ -4,4′-terphenyl iodide, 1,1′- Bis ⁇ P- (4-hydroxyphenyl) -P, P'-di (2,3-xylyl) phosphonium ⁇ -4,4'-terphenyl iodide, 1,1'-bis ⁇ P-
- the diphosphonium salt (3) of the present invention can be produced by the following two steps. First, in the presence of an organolithium compound, the formula (4):
- X represents a halogen atom
- halodiarylphosphine hereinafter referred to as halodiarylphosphine (4)
- diphosphine (6) (Wherein R 1 , R 2 and Y are the same as above) (hereinafter referred to as diphosphine (6)) is obtained (hereinafter referred to as the first reaction step).
- diphosphine (6) obtained in the first reaction step is converted to formula (7) in the presence of a nickel compound:
- the diphosphonium salt (1) of the present invention is obtained by converting the diphosphonium salt (3) into the formula (8): M + ⁇ A ⁇ (8) (In the formula, M + represents a hydrogen ion or an alkali metal ion. A ⁇ is the same as above.) (Hereinafter, referred to as a compound (8)). Called the reaction step).
- the first reaction step is a step of producing diphosphine (6) by reacting halodiarylphosphine (4) and aryl dihalide (5) in the presence of an organolithium compound.
- halodiarylphosphine (4) used in the first reaction step include diphenylchlorophosphine, di (2-tolyl) chlorophosphine, di (3-tolyl) chlorophosphine, di (4-tolyl) chlorophosphine, P-phenyl-P- (2-tolyl) chlorophosphine, P-phenyl-P- (3-tolyl) chlorophosphine, P-phenyl-P- (4-tolyl) chlorophosphine, diphenylbromophosphine, di (2- Tolyl) bromophosphine, di (3-tolyl) bromophosphine, di (4-tolyl) bromophosphine, P-phenyl-P- (2-tolyl) bromophosphine, P-phenyl-P- (3-tolyl) bromophosphine , P-phenyl-P- (4-tolyl) bromine, P
- organic lithium compound used in the first reaction step examples include methyl lithium, ethyl lithium, isopropyl lithium, n-butyl lithium, sec-butyl lithium, phenyl lithium, benzyl lithium and the like. Of these, n-butyllithium is preferred.
- the amount of the organolithium compound used is usually 2 to 10 mol, preferably 3 to 7 mol, more preferably 4 to 5 mol, per 1 mol of the aryl dihalide (5).
- aryl dihalide (5) used in the first reaction step examples include 1,4-dichlorobenzene, 1-bromo-4-chlorobenzene, 1-chloro-4-iodobenzene, 1,4-dibromobenzene, 1 -Bromo-4-iodobenzene, 1,4-diiodobenzene, 4,4'-dichlorobiphenyl, 4-bromo-4'-chlorobiphenyl, 4-chloro-4'-iodobiphenyl, 4,4'-dibromobiphenyl 4-bromo-4′-iodobiphenyl, 4,4′-diiodobiphenyl, 4,4′-dichloroterphenyl, 4-bromo-4′-chloroterphenyl, 4-chloro-4′-iodotephenyl, Examples include 4,4′-dibromoterphenyl, 4-bromo-4′-iodoterphenyl, 4-
- the amount of the aryl dihalide (5) to be used is generally 0.2 to 0.5 mol, preferably 0.3 to 0.5 mol, more preferably 0.00 mol, per 1 mol of the halodiarylphosphine (4). 4 to 0.5 mol.
- the first reaction step is usually performed in a solvent.
- the solvent to be used is not particularly limited as long as it does not affect the reaction, and usually an aliphatic solvent such as pentane, hexane, heptane, and octane, and an aromatic solvent such as benzene, toluene, xylene, trimethylbenzene, and ethylbenzene.
- Ether solvents such as diethyl ether, diisopropyl ether, tert-butyl methyl ether, cyclopentyl methyl ether, tetrahydrofuran and dioxane.
- ether solvents are preferable, and tetrahydrofuran is particularly preferable.
- the amount of the solvent used is usually 3 parts by weight or more, preferably 3 to 10 parts by weight, more preferably 6 to 8 parts by weight with respect to 1 part by weight of the aryl dihalide (5).
- the reaction in the first reaction step is usually performed by adding an organolithium compound to a mixed solution in which an aryl dihalide (5) and a solvent are mixed, and further adding a halodiarylphosphine (4).
- the temperature during the reaction between the aryl dihalide (5) and the organolithium compound is usually ⁇ 90 to ⁇ 40 ° C., preferably ⁇ 80 to ⁇ 60 ° C., more preferably ⁇ 80 to ⁇ 70 ° C.
- the reaction temperature of the reaction product of aryl dihalide (5) and organolithium compound with halodiarylphosphine (4) is usually ⁇ 90 ° C. to ⁇ 40 ° C., preferably ⁇ 80 to ⁇ 60 ° C. More preferably, it is ⁇ 80 ° C. to ⁇ 70 ° C.
- a poor solvent such as water is added to the reaction solution to precipitate diphosphine (6) as crystals, and then the resulting crystals
- the method of filtering is mentioned.
- the second reaction step is a step for producing diphosphonium salt (3) by reacting diphosphine (6) with hydroxyphenyl halide (7) in the presence of a nickel compound.
- nickel compound used in the second reaction step examples include nickel chloride (II), nickel bromide (II), nickel iodide (II) and the like. Of these, nickel (II) chloride is preferred.
- the amount of nickel compound used is usually 0.1 to 40 mol%, preferably 1.0 to 30 mol%, more preferably 15 to 25 mol% with respect to 1 mol of diphosphine (6).
- diphosphine (6) used in the second reaction step include 1,4-bis (diphenylphosphine) benzene, 1,4-bis ⁇ di (2-tolyl) phosphine ⁇ benzene, 1,4-bis ⁇ Di (3-tolyl) phosphine ⁇ benzene, 1,4-bis ⁇ di (4-tolyl) phosphine ⁇ benzene, 1,4-bis (P-phenyl-P- (2-tolyl) phosphine) benzene, 1,4 -Bis (P-phenyl-P- (3-tolyl) phosphine) benzene, 1,4-bis (P-phenyl-P- (4-tolyl) phosphine) benzene, 1,1'-bis (diphenylphosphine)- 4,4′-biphenyl, 1,1′-bis (P, P′-di (2-tolyl) phosphine) -4,
- hydroxyphenyl halide (7) used in the second reaction step include chlorophenol, bromophenol, iodophenol and the like. Of these, bromophenol is preferred.
- the amount of hydroxyphenyl halide (7) to be used is generally 2.0 to 5.0 mol, preferably 2.0 to 3.0 mol, more preferably 2.1 to 1 mol per 1 mol of diphosphine (6). 2.3 moles.
- the second reaction step is usually performed in a solvent.
- the solvent to be used is not particularly limited as long as it does not affect the reaction, and usually an aliphatic solvent such as pentane, hexane, heptane, and octane, and an aromatic solvent such as benzene, toluene, xylene, trimethylbenzene, and ethylbenzene.
- Ether solvents such as diethyl ether, diisopropyl ether, tert-butyl methyl ether, cyclopentyl methyl ether, tetrahydrofuran and dioxane, alcohol solvents such as methanol, ethanol, propanol, butanol, pentanol and ethylene glycol, and water. Among these, alcohol solvents are preferable, and ethylene glycol is particularly preferable.
- the amount of the solvent used is usually 3 parts by weight or more, preferably 4 to 20 parts by weight, more preferably 5 to 8 parts by weight with respect to 1 part by weight of diphosphine (6).
- the mixing order of the nickel compound, diphosphine (6), hydroxyphenyl halide (7) and solvent is not particularly limited.
- hydroxyphenyl halide (7) may be added after mixing nickel compound, diphosphine (6) and solvent, or diphosphine (6) is added after mixing nickel compound, hydroxyphenyl halide (7) and solvent. May be.
- the temperature during the reaction in the second reaction step is usually 150 to 200 ° C, preferably 160 to 190 ° C, more preferably 170 to 180 ° C.
- the third reaction step is a step for producing the diphosphonium salt (1) by reacting the diphosphonium salt (3) obtained in the second reaction step with the compound (8).
- M + represents a hydrogen ion or an alkali metal ion.
- a ⁇ represents BF 4 ⁇ , PF 6 ⁇ , (FSO 2 ) 2 N — or (CF 3 SO 2 ) 2 N — .
- the compound (8) include HBF 4 , HPF 6 , H (FSO 2 ) 2 N, H (CF 3 SO 2 ) 2 N, LiBF 4 , LiPF 6 , Li (FSO 2 ) 2 N, Li ( CF 3 SO 2 ) 2 N, NaBF 4 , NaPF 6 , Na (FSO 2 ) 2 N, Na (CF 3 SO 2 ) 2 N, KBF 4 , KPF 6 , K (FSO 2 ) 2 N, K (CF 3 SO 2 ) 2 N and the like.
- LiBF 4 , LiPF 6 , Li (FSO 2 ) 2 N and Li (CF 3 SO 2 ) 2 N are preferable.
- the amount of compound (8) used is usually 1.6 mol or more, preferably 1.8 to 2.4 mol, more preferably 2.0 to 2.2 mol, relative to 1 mol of phosphonium halide (3). is there.
- the third reaction step is usually performed in a solvent.
- the solvent to be used is not particularly limited as long as it does not affect the reaction between the diphosphonium salt (3) and the compound (8).
- aliphatic solvents such as pentane, hexane, heptane, and octane, benzene , Aromatic solvents such as toluene, xylene, trimethylbenzene and ethylbenzene, ether solvents such as diethyl ether, diisopropyl ether, tert-butyl methyl ether, cyclopentyl methyl ether, tetrahydrofuran and dioxane, halogen solvents such as dichloromethane, methanol, Examples include alcohols such as ethanol and butanol, nitriles such as acetonitrile, and water.
- an alcohol solvent, a nitrile solvent, a halogen solvent, water, or a mixed solvent thereof is preferable.
- the amount of the solvent to be used is not particularly limited, and is usually 10 parts by weight or less, preferably 5 to 7 parts by weight with respect to 1 part by weight of the diphosphonium salt (3).
- the mixing order of the diphosphonium salt (3), the compound (8) and the solvent is not particularly limited.
- the compound (8) may be added after mixing the diphosphonium salt (3) and the solvent, or the diphosphonium salt (3) may be added after mixing the compound (8) and the solvent.
- the temperature during the reaction in the third reaction step is usually 10 ° C. or higher, preferably 10 to 60 ° C., particularly preferably 10 to 30 ° C.
- the antistatic agent of the present invention contains diphosphonium salt (1) or diphosphonium salt (3) as an active ingredient.
- the diphosphonium salt (1) or the diphosphonium salt (3) can be used alone or as an antistatic agent. Moreover, you may mix and use additives, such as a stabilizer, or a solvent as needed.
- the insulator to be used for the antistatic agent of the present invention include a resin composition. In order to impart antistatic properties, a method of adding the antistatic agent of the present invention to the material of the resin composition at the time of production of the resin composition or the like, or a method of applying to the surface of the resin composition or the like, etc. Can be mentioned.
- the amount of diphosphonium salt (1) or diphosphonium salt (3) added to the resin composition is usually 0.01 to 25% by weight, preferably 1 to 10% by weight, based on 1 part by weight of the resin substrate. Particularly preferred is 1 to 5% by weight.
- additives may be added to the resin composition as long as the properties of the resin composition are not impaired.
- the additive include dyes, pigments, reinforcing agents, fillers, plasticizers, antioxidants, flame retardants, and ultraviolet absorbers.
- the curing accelerator of the present invention is a compound that accelerates the curing reaction between the epoxy resin and the curing agent, and contains a diphosphonium salt (1) or a diphosphonium salt (3) as an active ingredient. They can be used alone or as curing accelerators, and may be mixed with additives such as stabilizers or solvents as necessary.
- the addition amount of the curing accelerator of the present invention is usually from 0.01 to 15% by weight, preferably from 0.01 to 10% by weight, particularly preferably from 1 to 5% by weight, based on the epoxy resin.
- Example 1 A mixed solution of 78.69 g (0.25 mol) of dibromobiphenyl and 624.45 g of tetrahydrofuran was cooled to ⁇ 70 ° C., and 260.63 g (0.60 mol) of a 1.6 mol / l n-BuLi hexane solution was added dropwise to the mixed solution. did. After completion of the dropwise addition of the n-BuLi hexane solution, the reaction mixture was heated to 0 ° C., reacted for another 1 hour, and cooled again to ⁇ 70 ° C. To the reaction mixture, 112.24 g (0.51 mol) of diphenylchlorophosphine was added dropwise.
- Example 2 90.82 g (0.17 mol) of 1,1′-bis (diphenylphosphine) -4,4′-biphenyl obtained in Example 1 was mixed with 66.23 g (0.38 mol) of bromophenol, 622.50 g of ethylene glycol and chloride. The mixture to which 9.52 g (0.03 mol) of nickel hexahydrate was added was reacted at 175 ° C. for 5 hours. The resulting reaction mixture was cooled to room temperature, ion exchanged water was added, and the mixture was extracted with dichloromethane. The obtained organic layer was washed with ion-exchanged water and further concentrated under reduced pressure to obtain a concentrate.
- the obtained concentrate was dissolved in 335.00 g of dichloromethane to obtain a dichloromethane solution.
- the obtained dichloromethane solution was added dropwise to 839.73 g of acetonitrile at room temperature over 1.5 hours.
- the obtained mixture was stirred for 1 hour to precipitate crystals.
- the mixture was filtered to obtain crystals.
- the obtained crystals were washed with acetonitrile and dried under reduced pressure to give 127.09 g of 1,1′-bis (4-hydroxyphenyldiphenylphosphonium) -4,4′-biphenyl bromide (yield 84.18%).
- 1 H-NMR and 31 P-NMR of 1,1′-bis (4-hydroxyphenyldiphenylphosphonium) -4,4′-biphenyl bromide are shown below.
- Example 3 76.1% bis (trifluoromethanesulfonyl) imide was added to 500.70 g (0.58 mol) of 1,1′-bis (4-hydroxyphenyldiphenylphosphonium) -4,4′-biphenyl bromide obtained in Example 2. 457.74 g (1.21 mol) of a lithium acid aqueous solution, 2012.45 g of dichloromethane and 890.66 g of ion-exchanged water were added, and the mixture was reacted at room temperature for 3 hours.
- an epoxy resin manufactured by Mitsubishi Chemical Corporation, jER828, epoxy equivalent 190
- Curing time was determined by adding heating after the addition of iminobispropylamine and 1,1′-bis (4-hydroxyphenyldiphenylphosphonium) -4,4′-biphenyl bis (trifluoromethanesulfonyl) imide, The time (seconds) until stirring became impossible by curing was set. The results are shown in Table 1.
- Example 4 tetraphenylphosphonium bis (trifluoromethanesulfonyl) imide was used instead of 1,1'-bis (4-hydroxyphenyldiphenylphosphonium) -4,4'-biphenyl bis (trifluoromethanesulfonyl) imide.
- the curing time was measured in the same manner as in Example 4 except that. The results are shown in Table 1.
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Abstract
Description
まず、有機リチウム化合物の存在下、式(4): The diphosphonium salt (3) of the present invention can be produced by the following two steps.
First, in the presence of an organolithium compound, the formula (4):
式(5):
X-Y-X (5)
(式中、YおよびXは前記に同じ。)で表されるアリールジハライド(以下、アリールジハライド(5)という。)を反応させて、式(6):
Formula (5):
XYX (5)
(Wherein Y and X are the same as defined above) are reacted with an aryl dihalide (hereinafter referred to as aryl dihalide (5)) to give a formula (6):
M+・A- (8)
(式中、M+は水素イオンまたはアルカリ金属イオンを示す。A-は前記と同じ。)で表される化合物(以下、化合物(8)という。)と反応させて製造する(以下、第3反応工程という。)。 Further, the diphosphonium salt (1) of the present invention is obtained by converting the diphosphonium salt (3) into the formula (8):
M +・ A − (8)
(In the formula, M + represents a hydrogen ion or an alkali metal ion. A − is the same as above.) (Hereinafter, referred to as a compound (8)). Called the reaction step).
第1反応工程は、有機リチウム化合物の存在下、ハロジアリールホスフィン(4)とアリールジハライド(5)を反応させてジホスフィン(6)を製造する工程である。 The first reaction step will be described.
The first reaction step is a step of producing diphosphine (6) by reacting halodiarylphosphine (4) and aryl dihalide (5) in the presence of an organolithium compound.
第2反応工程は、ニッケル化合物の存在下、ジホスフィン(6)とヒドロキシフェニルハライド(7)を反応させて、ジホスホニウム塩(3)を製造する工程である。 Next, the second reaction step will be described.
The second reaction step is a step for producing diphosphonium salt (3) by reacting diphosphine (6) with hydroxyphenyl halide (7) in the presence of a nickel compound.
第3反応工程は、第2反応工程で得たジホスホニウム塩(3)と化合物(8)を反応させて、ジホスホニウム塩(1)を製造する工程である。 Finally, the third reaction step will be described.
The third reaction step is a step for producing the diphosphonium salt (1) by reacting the diphosphonium salt (3) obtained in the second reaction step with the compound (8).
ジブロモビフェニル78.69g(0.25mol)およびテトラヒドロフラン624.45gの混合溶液を-70℃に冷却し、その混合溶液に1.6mol/l n-BuLiヘキサン溶液260.63g(0.60mol)を滴下した。n-BuLiヘキサン溶液の滴下終了後、反応混合物を0℃に昇温して、さらに1時間反応し、再度-70℃まで冷却した。その反応混合物にジフェニルクロロホスフィン112.24g(0.51mol)を滴下した。ジフェニルクロロホスフィンの滴下終了後、反応混合物を0℃に昇温して、さらに1時間反応させた。この反応混合物にイオン交換水628.78gを添加して、結晶を析出させた。この混合物をろ過し、結晶を得た。得られた結晶をイオン交換水およびメタノールで洗浄し、洗浄後の結晶を減圧下で乾燥して、1,1’-ビス(ジフェニルホスフィン)-4,4’-ビフェニル91.47g(収率69.41%)を得た。1,1’-ビス(ジフェニルホスフィン)-4,4’-ビフェニルの1H-NMRおよび31P-NMRを次に示す。 Example 1
A mixed solution of 78.69 g (0.25 mol) of dibromobiphenyl and 624.45 g of tetrahydrofuran was cooled to −70 ° C., and 260.63 g (0.60 mol) of a 1.6 mol / l n-BuLi hexane solution was added dropwise to the mixed solution. did. After completion of the dropwise addition of the n-BuLi hexane solution, the reaction mixture was heated to 0 ° C., reacted for another 1 hour, and cooled again to −70 ° C. To the reaction mixture, 112.24 g (0.51 mol) of diphenylchlorophosphine was added dropwise. After completion of the dropwise addition of diphenylchlorophosphine, the reaction mixture was heated to 0 ° C. and further reacted for 1 hour. To this reaction mixture, 628.78 g of ion-exchanged water was added to precipitate crystals. The mixture was filtered to obtain crystals. The obtained crystals were washed with ion-exchanged water and methanol, and the washed crystals were dried under reduced pressure to obtain 91.47 g of 1,1′-bis (diphenylphosphine) -4,4′-biphenyl (yield 69). .41%). 1 H-NMR and 31 P-NMR of 1,1′-bis (diphenylphosphine) -4,4′-biphenyl are shown below.
実施例1で得た1,1’-ビス(ジフェニルホスフィン)-4,4’-ビフェニル90.82g(0.17mol)にブロモフェノール66.23g(0.38mol)、エチレングリコール622.50gおよび塩化ニッケル六水和物9.52g(0.03mol)を加えた混合物を、175℃で5時間反応させた。得られた反応混合物を室温まで冷却し、イオン交換水を加え、ジクロロメタンで抽出した。得られた有機層をイオン交換水で洗浄し、さらに減圧下で濃縮して濃縮物を得た。得られた濃縮物をジクロロメタン335.00gに溶解させてジクロロメタン溶液とした。得られたジクロロメタン溶液を、アセトニトリル839.73gに、室温下、1.5時間かけて滴下した。得られた混合物を1時間撹拌し、結晶を析出させた。この混合物をろ過し、結晶を得た。得られた結晶をアセトニトリルで洗浄し、減圧下で乾燥して、1,1’-ビス(4-ヒドロキシフェニルジフェニルホスホニウム)-4,4’-ビフェニル=ブロミド127.09g(収率84.18%)を得た。1,1’-ビス(4-ヒドロキシフェニルジフェニルホスホニウム)-4,4’-ビフェニル=ブロミドの1H-NMR、および31P-NMRを次に示す。 Example 2
90.82 g (0.17 mol) of 1,1′-bis (diphenylphosphine) -4,4′-biphenyl obtained in Example 1 was mixed with 66.23 g (0.38 mol) of bromophenol, 622.50 g of ethylene glycol and chloride. The mixture to which 9.52 g (0.03 mol) of nickel hexahydrate was added was reacted at 175 ° C. for 5 hours. The resulting reaction mixture was cooled to room temperature, ion exchanged water was added, and the mixture was extracted with dichloromethane. The obtained organic layer was washed with ion-exchanged water and further concentrated under reduced pressure to obtain a concentrate. The obtained concentrate was dissolved in 335.00 g of dichloromethane to obtain a dichloromethane solution. The obtained dichloromethane solution was added dropwise to 839.73 g of acetonitrile at room temperature over 1.5 hours. The obtained mixture was stirred for 1 hour to precipitate crystals. The mixture was filtered to obtain crystals. The obtained crystals were washed with acetonitrile and dried under reduced pressure to give 127.09 g of 1,1′-bis (4-hydroxyphenyldiphenylphosphonium) -4,4′-biphenyl bromide (yield 84.18%). ) 1 H-NMR and 31 P-NMR of 1,1′-bis (4-hydroxyphenyldiphenylphosphonium) -4,4′-biphenyl bromide are shown below.
実施例2で得た1,1’-ビス(4-ヒドロキシフェニルジフェニルホスホニウム)-4,4’-ビフェニル=ブロミド500.70g(0.58mol)に、76.1%ビス(トリフルオロメタンスルホニル)イミド酸リチウム水溶液457.74g(1.21mol)、ジクロロメタン2012.45gおよびイオン交換水890.66gを加えて、室温で3時間反応させた。この反応混合物をイオン交換水で2回洗浄した後、有機層を減圧下で濃縮して、1,1’-ビス(4-ヒドロキシフェニルジフェニルホスホニウム)-4,4’-ビフェニル=ビス(トリフルオロメタンスルホニル)イミド621.83g(収率84.99%)を得た。1,1’-ビス(4-ヒドロキシフェニルジフェニルホスホニウム)-4,4’-ビフェニル=ビス(トリフルオロメタンスルホニル)イミドの1H-NMR、および31P-NMRを次に示す。 Example 3
76.1% bis (trifluoromethanesulfonyl) imide was added to 500.70 g (0.58 mol) of 1,1′-bis (4-hydroxyphenyldiphenylphosphonium) -4,4′-biphenyl bromide obtained in Example 2. 457.74 g (1.21 mol) of a lithium acid aqueous solution, 2012.45 g of dichloromethane and 890.66 g of ion-exchanged water were added, and the mixture was reacted at room temperature for 3 hours. The reaction mixture was washed twice with ion exchanged water, and then the organic layer was concentrated under reduced pressure to obtain 1,1′-bis (4-hydroxyphenyldiphenylphosphonium) -4,4′-biphenyl = bis (trifluoromethane). This gave 621.83 g (yield 84.99%) of sulfonyl) imide. 1 H-NMR and 31 P-NMR of 1,1′-bis (4-hydroxyphenyldiphenylphosphonium) -4,4′-biphenyl = bis (trifluoromethanesulfonyl) imide are shown below.
エポキシ樹脂(三菱化学株式会社製、jER828、エポキシ当量190)4.4gを試験管に入れ、そこに3,3’-イミノビスプロピルアミン0.6gおよび実施例3で得た1,1’-ビス(4-ヒドロキシフェニルジフェニルホスホニウム)-4,4’-ビフェニル=ビス(トリフルオロメタンスルホニル)イミド0.25gを添加して、1分間ガラス棒で撹拌した。この混合物を70℃の油浴で加熱しながら撹拌し、硬化までの時間を測定した。硬化時間は、イミノビスプロピルアミンおよび1,1’-ビス(4-ヒドロキシフェニルジフェニルホスホニウム)-4,4’-ビフェニル=ビス(トリフルオロメタンスルホニル)イミドを添加後に加熱を開始してから、樹脂の硬化により撹拌が不可能となるまでの時間(秒)とした。その結果を表1に示す。 Example 4
4.4 g of an epoxy resin (manufactured by Mitsubishi Chemical Corporation, jER828, epoxy equivalent 190) was put in a test tube, and 0.6 g of 3,3′-iminobispropylamine and 1,1′- obtained in Example 3 were added thereto. 0.25 g of bis (4-hydroxyphenyldiphenylphosphonium) -4,4′-biphenyl = bis (trifluoromethanesulfonyl) imide was added and stirred with a glass rod for 1 minute. The mixture was stirred while being heated in a 70 ° C. oil bath, and the time until curing was measured. Curing time was determined by adding heating after the addition of iminobispropylamine and 1,1′-bis (4-hydroxyphenyldiphenylphosphonium) -4,4′-biphenyl bis (trifluoromethanesulfonyl) imide, The time (seconds) until stirring became impossible by curing was set. The results are shown in Table 1.
実施例4において、1,1’-ビス(4-ヒドロキシフェニルジフェニルホスホニウム)-4,4’-ビフェニル=ビス(トリフルオロメタンスルホニル)イミドを用いない以外は実施例4と同様にして硬化時間を測定した。その結果を表1に示す。 Comparative Example 1
In Example 4, the curing time was measured in the same manner as in Example 4 except that 1,1′-bis (4-hydroxyphenyldiphenylphosphonium) -4,4′-biphenyl = bis (trifluoromethanesulfonyl) imide was not used. did. The results are shown in Table 1.
実施例4において、1,1’-ビス(4-ヒドロキシフェニルジフェニルホスホニウム)-4,4’-ビフェニル=ビス(トリフルオロメタンスルホニル)イミドの代わりにテトラフェニルホスホニウム=ビス(トリフルオロメタンスルホニル)イミドを用いた以外は、実施例4と同様にして硬化時間を測定した。その結果を表1に示す。 Comparative Example 2
In Example 4, tetraphenylphosphonium bis (trifluoromethanesulfonyl) imide was used instead of 1,1'-bis (4-hydroxyphenyldiphenylphosphonium) -4,4'-biphenyl bis (trifluoromethanesulfonyl) imide. The curing time was measured in the same manner as in Example 4 except that. The results are shown in Table 1.
実施例4において、1,1’-ビス(4-ヒドロキシフェニルジフェニルホスホニウム)-4,4’-ビフェニル=ビス(トリフルオロメタンスルホニル)イミドの代わりにトリフェニルホスフィンを用いた以外は、実施例4と同様にして硬化時間を測定した。その結果を表1に示す。 Comparative Example 3
Example 4 is the same as Example 4 except that triphenylphosphine was used instead of 1,1′-bis (4-hydroxyphenyldiphenylphosphonium) -4,4′-biphenyl = bis (trifluoromethanesulfonyl) imide. Similarly, the curing time was measured. The results are shown in Table 1.
ポリカーボネート樹脂(住友ダウ株式会社製、カリバー(商標)200-13 NAT)3.2gとジクロロメタン20mLを混合し、ポリカーボネート樹脂のジクロロメタン溶液を調製した。その溶液に、実施例3で得た1,1’-ビス(4-ヒドロキシフェニルジフェニルホスホニウム)-4,4’-ビフェニル=ビス(トリフルオロメタンスルホニル)イミドを0.16g添加し、溶解させた。得られた溶液を金型(12cm×20cm×2cm)に流し込み、これを室温で1時間乾燥した。さらに、40℃で1時間乾燥することにより、ポリカーボネート樹脂シートを作成した。得られたポリカーボネート樹脂シートの表面抵抗率を測定した。その結果を表2に示す。 Example 5
3.2 g of polycarbonate resin (manufactured by Sumitomo Dow Co., Ltd., Caliber (trademark) 200-13 NAT) and 20 mL of dichloromethane were mixed to prepare a dichloromethane solution of the polycarbonate resin. To the solution, 0.16 g of 1,1′-bis (4-hydroxyphenyldiphenylphosphonium) -4,4′-biphenyl = bis (trifluoromethanesulfonyl) imide obtained in Example 3 was added and dissolved. The obtained solution was poured into a mold (12 cm × 20 cm × 2 cm) and dried at room temperature for 1 hour. Furthermore, the polycarbonate resin sheet was created by drying at 40 degreeC for 1 hour. The surface resistivity of the obtained polycarbonate resin sheet was measured. The results are shown in Table 2.
実施例5において、1,1’-ビス(4-ヒドロキシフェニルジフェニルホスホニウム)-4,4’-ビフェニル=ビス(トリフルオロメタンスルホニル)イミドを用いない以外は、実施例5と同様にしてポリカーボネート樹脂シートを作成した。得られたポリカーボネート樹脂シートの表面抵抗率を測定した。その結果を表2に示す。 Comparative Example 4
A polycarbonate resin sheet was prepared in the same manner as in Example 5 except that 1,1′-bis (4-hydroxyphenyldiphenylphosphonium) -4,4′-biphenyl = bis (trifluoromethanesulfonyl) imide was not used. It was created. The surface resistivity of the obtained polycarbonate resin sheet was measured. The results are shown in Table 2.
ポリビニルブチラール(PVB)樹脂(分子量2400、和光純薬工業株式会社製)3.2gとジクロロメタン:アセトン=8:1(重量比)の混合溶媒45mLとを混合し、ポリビニルブチラール樹脂溶液を調製した。この溶液に、実施例3で得た1,1’-ビス(4-ヒドロキシフェニルジフェニルホスホニウム)-4,4’-ビフェニル=ビス(トリフルオロメタンスルホニル)イミドを0.16g添加し、溶解させた。得られた溶液を金型(12cm×20cm×2cm)に流し込み、これを室温で1時間乾燥した。さらに40℃で1時間乾燥して、ポリビニルブチラール樹脂シートを作成した。得られたポリビニルブチラール樹脂シートの表面抵抗率を測定した。その結果を表3に示す。 Example 6
Polyvinyl butyral (PVB) resin (molecular weight 2400, manufactured by Wako Pure Chemical Industries, Ltd.) 3.2 g and dichloromethane: acetone = 8: 1 (weight ratio) mixed solvent 45 mL were mixed to prepare a polyvinyl butyral resin solution. To this solution, 0.16 g of 1,1′-bis (4-hydroxyphenyldiphenylphosphonium) -4,4′-biphenyl = bis (trifluoromethanesulfonyl) imide obtained in Example 3 was added and dissolved. The obtained solution was poured into a mold (12 cm × 20 cm × 2 cm) and dried at room temperature for 1 hour. Furthermore, it dried at 40 degreeC for 1 hour, and the polyvinyl butyral resin sheet was created. The surface resistivity of the obtained polyvinyl butyral resin sheet was measured. The results are shown in Table 3.
実施例6において、1,1’-ビス(4-ヒドロキシフェニルジフェニルホスホニウム)-4,4’-ビフェニル=ビス(トリフルオロメタンスルホニル)イミドを用いない以外は、実施例6と同様にしてポリビニルブチラール樹脂シートを作成した。得られたポリビニルブチラール樹脂シートの表面抵抗率を測定した。その結果を表3に示す。 Comparative Example 5
A polyvinyl butyral resin was prepared in the same manner as in Example 6 except that 1,1′-bis (4-hydroxyphenyldiphenylphosphonium) -4,4′-biphenyl = bis (trifluoromethanesulfonyl) imide was not used. Created a sheet. The surface resistivity of the obtained polyvinyl butyral resin sheet was measured. The results are shown in Table 3.
Claims (8)
- 式(1):
- R1およびR2が、フェニル基である請求項1または2に記載のジホスホニウム塩。 The diphosphonium salt according to claim 1 or 2, wherein R 1 and R 2 are phenyl groups.
- nが、2である請求項1または2に記載のジホスホニウム塩。 The diphosphonium salt according to claim 1 or 2, wherein n is 2.
- 下記第1反応工程と第2反応工程からなることを特徴とする、請求項2に記載のジホスホニウム塩の製造方法。
有機リチウム化合物の存在下、式(4):
式(5):
X-Y-X (5)
(式中、YおよびXは前記に同じ。)で表されるアリールジハライドを反応させて、式(6):
第1反応工程により得られたジホスフィンをニッケル化合物の存在下で、式(7):
In the presence of an organolithium compound, formula (4):
XYX (5)
(Wherein Y and X are the same as defined above) are reacted with an aryl dihalide represented by formula (6):
In the presence of a nickel compound, diphosphine obtained by the first reaction step is represented by the formula (7):
- 下記第3反応工程からなることを特徴とする請求項1に記載のジホスホニウム塩の製造方法。
請求項5で得られたジホスホニウム塩を、式(8):
M+・A- (8)
(式中、M+は水素イオンまたはアルカリ金属イオンを示す。A-は前記と同じ。)で表される化合物と反応させる第3反応工程。 It consists of the following 3rd reaction process, The manufacturing method of the diphosphonium salt of Claim 1 characterized by the above-mentioned.
The diphosphonium salt obtained in claim 5 is represented by the formula (8):
M +・ A − (8)
(Wherein M + represents a hydrogen ion or an alkali metal ion, A − is the same as defined above), and a third reaction step. - 請求項1または2に記載のジホスホニウム塩を少なくとも1種含有することを特徴とする帯電防止剤。 An antistatic agent comprising at least one diphosphonium salt according to claim 1 or 2.
- 請求項1または2に記載のジホスホニウム塩を少なくとも1種含有することを特徴とする硬化促進剤。 A curing accelerator comprising at least one diphosphonium salt according to claim 1 or 2.
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JPH0680681A (en) * | 1992-07-15 | 1994-03-22 | Nippon Kayaku Co Ltd | Phosphonium compound and electrophotographic toner using the same |
JPH0770361A (en) * | 1993-09-06 | 1995-03-14 | Nippon Chem Ind Co Ltd | Antistatic agent |
JP2004182956A (en) * | 2002-12-06 | 2004-07-02 | Nichia Chem Ind Ltd | Epoxy resin composition |
JP2005232385A (en) * | 2004-02-20 | 2005-09-02 | Sumitomo Bakelite Co Ltd | Hardening accelerator, epoxy resin composition and semiconductor device |
JP2009029857A (en) * | 2007-07-25 | 2009-02-12 | Toyo Ink Mfg Co Ltd | Antistatic agent and use thereof |
JP2011132299A (en) * | 2009-12-22 | 2011-07-07 | Shin-Etsu Chemical Co Ltd | Silicone resin composition |
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JPH08198921A (en) | 1995-01-25 | 1996-08-06 | Maruzen Petrochem Co Ltd | Thermosetting resin composition |
US6592988B1 (en) * | 1999-12-29 | 2003-07-15 | 3M Innovative Properties Company | Water-and oil-repellent, antistatic composition |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPH0680681A (en) * | 1992-07-15 | 1994-03-22 | Nippon Kayaku Co Ltd | Phosphonium compound and electrophotographic toner using the same |
JPH0770361A (en) * | 1993-09-06 | 1995-03-14 | Nippon Chem Ind Co Ltd | Antistatic agent |
JP2004182956A (en) * | 2002-12-06 | 2004-07-02 | Nichia Chem Ind Ltd | Epoxy resin composition |
JP2005232385A (en) * | 2004-02-20 | 2005-09-02 | Sumitomo Bakelite Co Ltd | Hardening accelerator, epoxy resin composition and semiconductor device |
JP2009029857A (en) * | 2007-07-25 | 2009-02-12 | Toyo Ink Mfg Co Ltd | Antistatic agent and use thereof |
JP2011132299A (en) * | 2009-12-22 | 2011-07-07 | Shin-Etsu Chemical Co Ltd | Silicone resin composition |
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