WO2014000352A1 - 一种用于检测二维光点位置的传感器 - Google Patents

一种用于检测二维光点位置的传感器 Download PDF

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Publication number
WO2014000352A1
WO2014000352A1 PCT/CN2012/083421 CN2012083421W WO2014000352A1 WO 2014000352 A1 WO2014000352 A1 WO 2014000352A1 CN 2012083421 W CN2012083421 W CN 2012083421W WO 2014000352 A1 WO2014000352 A1 WO 2014000352A1
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film layer
sensor
top surface
layer
detecting
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French (fr)
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秦明
单园园
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Southeast University
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Southeast University
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/957—Circuit arrangements for devices having potential barriers for position-sensitive photodetectors, e.g. lateral-effect photodiodes or quadrant photodiodes

Definitions

  • the present invention relates to a sensor structure, and in particular to a sensor for detecting a position of a two-dimensional spot. Background technique
  • Spot position sensors are used in a wide range of applications in optical position and angle measurement and control, remote optical control systems, displacement and vibration monitoring, laser beam calibration, automatic range detection systems, and human motion and analysis systems.
  • the traditional spot position detecting sensor is made of silicon material and is composed of a large-area PIN photodiode. Compared with the discrete unit detector array, it has the advantages of high position resolution, simple and fast response current.
  • the use of the PIN structure for spot position detection has the aforementioned advantages of high detection sensitivity, but the manufacturing cost is greatly increased due to the use of the near-intrinsic layer I material layer. Therefore, how to improve the structure of the existing spot position sensor and reduce the manufacturing cost is an important issue in the design of the current spot position sensor. Summary of the invention
  • the technical problem to be solved by the present invention is to provide a sensor for detecting the position of a two-dimensional spot, which can be used for detecting a two-dimensional spot position, and which is inexpensive to manufacture and high in measurement sensitivity.
  • the technical solution adopted by the present invention is: A sensor for detecting a position of a two-dimensional spot, the sensor comprising a semiconductor layer, an insulating film layer, a metal conductive film layer, a photoresist film layer, a resistive film layer, and four extraction electrodes of the same size, the semiconductor layer is located at the bottom
  • the insulating film layer, the metal conductive film layer, the photoresist film layer and the resistive film layer are sequentially disposed on the top surface of the semiconductor layer from bottom to top, and the top surface area of the photoresist film layer and the top surface area of the resistive film layer are respectively Less than the top surface area of the metal conductive film layer
  • the extraction electrode is connected to the top surface of the resistive film layer, there is a gap between the lead electrodes, and the four lead electrodes are located on four sides of the square, and the opposite two lead electrodes surround the square
  • the center points are symmetrical to each other.
  • the resistive film layer is made of a transparent extraction electrode material.
  • the photoresist film layer is made of cadmium sulfide.
  • the spot position detecting sensor in the prior art adopts a PIN type structure and is expensive to manufacture.
  • the sensor of the present invention comprises a semiconductor layer, an insulating film layer, a metal conductive film layer, a photoresist film layer, a resistive film layer and an extraction electrode.
  • the semiconductor semiconductor manufacturing process can be performed on a common semiconductor silicon material, and the sensor can be completed.
  • the production of the film because the film material is inexpensive, and the film can be realized by the sputtering method, the material price and the processing cost are relatively low.
  • the device can be fabricated from conventional silicon wafers, thus significantly reducing device manufacturing costs.
  • the measurement is simple and the sensitivity is high.
  • the existing spot position detecting sensor works by fabricating a PN junction on a near-intrinsic high-resistance material and operating it in a reverse bias state, which will extend to the opposite side of the intrinsic material when illuminated. Photogenerated carriers are generated in the region, and the current formed by the photo-generated carriers is redistributed in the surface low-resistance diffusion layer, and the illumination position can be calculated by measuring these redistributed currents.
  • the sensor of the invention realizes the spot position based on the principle that the photoresistor is sharply changed by the illumination In the detection, when there is no light, the resistive film layer and the metal conductive film layer are separated by a photoresist film layer having a large resistance.
  • the measurement of the sensor of the present invention is simple.
  • the sensor of the invention has a large detection range and no dead zone, and the measurement sensitivity is high.
  • the illumination point has no limitation of the illumination area, as long as it is illuminated on the resistive film layer, the detection range is large, and there is no dead zone.
  • the output current is controllable, which is beneficial to improve measurement sensitivity.
  • the resistance of the resistive film layer is fixed, and the magnitude of the output current can be controlled by controlling the applied voltage on the opposite electrodes.
  • the output current is large, the measured current is also large, and it is not easily affected by ambient noise, which is advantageous for improving measurement sensitivity.
  • the processing technology is simple.
  • a semiconductor material is first selected, and then an insulating film layer is grown on the upper surface of the semiconductor layer by oxidation, and then a metal conductive film layer, a photoresist film layer, and a resistor are sequentially deposited on the surface by sputtering or evaporation.
  • the thin film layer and the metal aluminum are next formed by photolithography and etching to form an extraction electrode, and finally the metal conductive thin film layer is exposed by photolithography, etching of the resistive film layer and the photoresist film layer.
  • the entire process is a thin film process.
  • the sensor of the present invention has a simple processing process and low environmental requirements.
  • Figure 1 is a schematic view of the structure of the present invention.
  • the figure includes: a semiconductor layer 1, an insulating film layer 2, a metal conductive film layer 3, a photoresist film layer 4, a resistive film layer 5, and an extraction electrode 6.
  • 2 is a schematic diagram of a PIN type spot position detecting sensor test circuit.
  • FIG. 3 is a schematic diagram of the structure test circuit of the present invention. detailed description
  • a sensor for detecting a position of a two-dimensional spot includes a semiconductor layer 1, an insulating film layer 2, a metal conductive film layer 3, a photoresist film layer 4, a resistive film layer 5, and four.
  • the semiconductor layer 1 can be made of a silicon material.
  • the semiconductor layer 1 is located at the bottom, and the insulating film layer 2, the metal conductive film layer 3, the photoresist film layer 4, and the resistive film layer 5 are sequentially disposed on the top surface of the semiconductor layer 1 from the bottom to the top, and the photoresist film layer 4 is
  • the top surface area and the top surface area of the resistive film layer 5 are respectively smaller than the top surface area of the metal conductive thin film layer 3
  • the extraction electrode 6 is connected to the top surface of the resistive film layer 5, the lead electrode 6 has a gap therebetween, and the four lead electrodes 6 is located on the four sides of the square, and the opposite two extraction electrodes 6 are symmetrical to each other around the center point of the square.
  • the sensor comprises a metal conductive film layer 3, a photoresist film layer 4 and a resistive film layer 5.
  • the resistive film layer 5 and the metal conductive film layer 3 are separated by a photoresist film layer 4 having a large electrical resistance.
  • the use of light causes a partial short circuit under the irradiation point to generate a considerable leakage current.
  • This current flows laterally in the resistive film layer 5 and distributes the current according to the positions of the four lead electrodes 6 on the front side.
  • the spot position information can be obtained by measuring the magnitude of the current on the four extraction electrodes 6.
  • the device can be fabricated from conventional silicon wafers, thus significantly reducing device manufacturing costs.
  • the working principle of the sensor of the above structure is that the photoresist film layer 4 is electrically operated without light irradiation. It has a large resistance and is approximately an insulating material.
  • the resistive film layer 5 is absorbed by the photoresist film layer 4, and the resistance on the photoresist film layer 4 corresponding to the point is sharply lowered, so that the resistance at the position is made.
  • the film layer 5 and the underlying metal conductive film layer 3 are approximately short-circuited. If a voltage is applied between the four extraction electrodes 6 and the metal conductive film layer 3, a current will flow through the illumination.
  • the current begins to flow laterally in the resistive film layer 5, and since there are four lead-out electrodes 6, the lead-out electrode 6 is different from the illumination distance, thereby causing current to be redistributed in the resistive film layer 5, and the light spot is calculated on the surface by the proportional distribution of the current.
  • the two-dimensional position Specifically, by measuring the magnitude of the four currents on the four extraction electrodes 6, and establishing the center position of the sensor as the origin, and the lateral direction is the X direction and the longitudinal direction is the coordinate system of the y direction, the position of the light spot is determined by the following formula.
  • L is the distance between the two opposite extraction electrodes 6, in meters; II is the current flowing through the extraction electrode on the left side, in amperes; : ⁇ is the flow on the extraction electrode on the right side Current, unit: Amperes; ⁇ ⁇ is the current flowing through the extraction electrode on the front side, in amperes; I B is the current flowing through the extraction electrode on the back side, in amperes.
  • the manufacturing process of the sensor is as follows: First, a semiconductor material, such as a silicon wafer, is selected to form the semiconductor layer 1, and then an insulating film layer 2 is grown on the upper surface of the semiconductor layer 1 by oxidation, and then sequentially by sputtering or evaporation. Depositing a metal conductive film layer 3 (such as metal aluminum), a photoresist film layer 4 (such as CdS), a resistive film layer 5 (such as IT0), and metal aluminum on the surface, and then forming the extraction electrode 6 by photolithography and etching, and finally The metal conductive thin film layer 3 is exposed by photolithography, etching of the resistive film layer 5, and the photoresist film layer 4. The entire process is a thin film process, so not only In the case of silicon wafers, the above sensors can be fabricated on other substrates such as ceramics and glass.
  • the resistive film layer 5 is made of a transparent extraction electrode material such as indium tin oxide (IT0).
  • IT0 indium tin oxide
  • IT0 is conductive and transparent. Because it is a metal oxide, the resistance is larger than that of pure metal, and it is more suitable as a resistor.
  • the photoresistor film layer 4 is made of cadmium sulfide.
  • the photoresist film layer 4 can also be made of other photosensitive materials such as aluminum sulfide, lead sulfide or barium sulfide.
  • the structure proposed by the present invention does not have a knot, and the working principle and the working principle of the PIN device are different.
  • the light causes the resistance of the photosensitive material at a certain point to become sharply low, a few milliamperes can be generated.
  • the current of ten milliamperes is 2-4 orders of magnitude higher than the microampere or submicron current of the PIN structure. Therefore, the detection sensitivity is high.

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  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Description

技术领域
本发明涉及一种传感器结构， 具体来说， 涉及一种用于检测二维光点位 置的传感器。 背景技术
光点位置传感器在光学位置和角度的测量与控制、 远程光学控制系统、 位移和振动监测、 激光光束校准、 自动范围探测系统以及人体运动及分析系 统等领域有广泛的应用。 传统的光点位置检测传感器是制作在硅材料上的， 由大面积 PIN光电二极管构成， 它与分立单元探测器阵列相比，具有位置分 辨率高、 响应电流简单、 快速等优点。 近年也有 S0I衬底硅上制造 PIN型光 点位置检测传感器的报道。采用 PIN结构实现光点位置检测虽然有检测灵敏 度高等前述优点， 但由于涉及到使用近本征的 I层材料层， 使制造成本大大 增加。 因此如何改进现有光点位置传感器结构， 降低制造成本为目前光点位 置传感器设计的一个重要问题。 发明内容
技术问题： 本发明所要解决的技术问题是： 提供一种用于检测二维光点 位置的传感器， 该结构的传感器可以用于检测二维光点位置， 并且制造成本 低廉、 测量灵敏度高。
技术方案： 为解决上述技术问题， 本发明采用的技术方案是： 一种用于检测二维光点位置的传感器， 该传感器包括半导体层、 绝缘薄 膜层、 金属导电薄膜层、 光敏电阻薄膜层、 电阻薄膜层和四个大小相同的引 出电极， 半导体层位于最下方， 绝缘薄膜层、 金属导电薄膜层、 光敏电阻薄 膜层和电阻薄膜层从下向上依次贴合布设在半导体层的顶面， 并且光敏电阻 薄膜层的顶面面积和电阻薄膜层的顶面面积分别小于金属导电薄膜层的顶 面面积， 引出电极连接在电阻薄膜层的顶面， 引出电极之间有间隙， 且四个 引出电极位于正方形的四条边上，且相对的两个引出电极围绕正方形的中心 点相互对称。
进一步， 所述的电阻薄膜层由透明引出电极材料制成。
进一步， 所述的光敏电阻薄膜层由硫化镉制成。
有益效果： 与现有技术相比， 本发明具有以下有益效果：
1.制造成本低廉。 现有技术中的光点位置检测传感器采用 PIN型结构， 制造成本高。 而本发明的传感器包括半导体层、 绝缘薄膜层、 金属导电薄膜 层、 光敏电阻薄膜层、 电阻薄膜层和引出电极六个部件， 在普通半导体硅材 料上采用标准半导体制造工艺加工， 可以完成本传感器的制作， 由于薄膜材 料价格低廉， 且可采用溅射方法实现薄膜， 因此材料价格和加工成本都比较 低。 该器件可采用普通硅片进行制造， 因此显著降低了器件制造成本。
2.测量简单， 且灵敏度高。 现有的光点位置检测传感器的工作原理是， 在近本征的高阻材料上制造 PN结并使其工作在反偏状态， 当光照时将在扩 展到本征材料一侧的反偏耗尽区中产生光生载流子， 该光生载流子构成的电 流在表面低阻扩散层中进行再分配，通过测量这些再分配得电流就可计算光 照位置。本发明的传感器是基于光敏电阻受光照急剧变化的原理实现光点位 置的检测， 当没有光照时， 电阻薄膜层和金属导电薄膜层被电阻很大的光敏 电阻薄膜层分隔。 工作时， 引出电极和金属导电层之间施加电压， 利用光照 会使照射点下局部短路产生可观的漏电流。该电流在电阻薄膜层中横向流动 并根据正面四个引出电极位置分配电流大小。通过测量这四个引出电极上的 电流大小就可获得光点位置信息。 因此， 本发明的传感器的测量简单。 同时 本发明的传感器检测范围大， 且无死区， 测量灵敏度高。 光照点没有光照区 域的限制， 只要照在电阻薄膜层上即可， 检测范围大， 且无死区。
3. 输出电流可控， 有利于提高测量灵敏度。 在本发明中， 电阻薄膜层 的电阻是固定的， 通过控制相对的两个电极上的加载电压， 即可控制输出电 流的大小。 输出电流大时， 测量的电流也较大， 不容易受周围环境噪声的影 响， 有利于提高测量灵敏度。
4. 加工工艺简单。 本发明的传感器制备时， 首先选取半导体材料， 然 后通过氧化在半导体层的上表面生长一层绝缘薄膜层，再通过溅射或蒸发原 理依次在表面沉积金属导电薄膜层、光敏电阻薄膜层、电阻薄膜层和金属铝， 接下来通过光刻及腐蚀形成引出电极， 最后在通过光刻、 腐蚀电阻薄膜层和 光敏电阻薄膜层露出金属导电薄膜层。 整个工艺都是薄膜工艺。相对于传统 的传感器的制备， 本发明的传感器加工工艺简单， 对环境要求低。 附图说明
图 1为本发明的结构示意图。
图中有： 半导体层 1、 绝缘薄膜层 2、 金属导电薄膜层 3、 光敏电阻薄膜 层 4、 电阻薄膜层 5、 引出电极 6。 图 2是 PIN型光点位置检测传感器测试电路原理图。
图 3是本发明结构测试电路原理图。 具体实施方式
下面结合附图， 对本发明的技术方案进行详细的说明。
如图 1所示， 本发明的一种用于检测二维光点位置的传感器， 包括半导 体层 1、 绝缘薄膜层 2、 金属导电薄膜层 3、 光敏电阻薄膜层 4、 电阻薄膜层 5和四个引出电极 6。 半导体层 1可以采用硅材料制成。 半导体层 1位于最 下方， 绝缘薄膜层 2、金属导电薄膜层 3、光敏电阻薄膜层 4和电阻薄膜层 5 从下向上依次贴合布设在半导体层 1的顶面， 并且光敏电阻薄膜层 4的顶面 面积和电阻薄膜层 5的顶面面积分别小于金属导电薄膜层 3的顶面面积， 引 出电极 6连接在电阻薄膜层 5的顶面， 引出电极 6之间有间隙， 且四个引出 电极 6位于正方形的四条边上，且相对的两个引出电极 6围绕正方形的中心 点相互对称。
该传感器包括金属导电薄膜层 3、光敏电阻薄膜层 4和电阻薄膜层 5。当 没有光照时， 电阻薄膜层 5和金属导电薄膜层 3被电阻很大的光敏电阻薄膜 层 4分隔。 工作时， 光照在该传感器表面时， 并且引出电极 6和金属导电层 3之间施加电压， 利用光照会使照射点下局部短路产生可观的漏电流。 该电 流在电阻薄膜层 5 中横向流动并根据正面四个引出电极 6位置分配电流大 小。通过测量这四个引出电极 6上的电流大小就可获得光点位置信息。 该器 件可采用普通硅片进行制造， 因此显著降低了器件制造成本。
上述结构的传感器的工作原理是：光敏电阻薄膜层 4在没有光照射时电 阻很大， 近似为绝缘材料。 当光斑照射在传感器上表面某点时， 将透过电阻 薄膜层 5， 被光敏电阻薄膜层 4吸收， 则与该点对应的光敏电阻薄膜层 4上 的电阻急剧下降，使该点位置的电阻薄膜层 5和下方的金属导电薄膜层 3近 似短路。 如果在四个引出电极 6和金属导电薄膜层 3之间加一电压， 则光照 处将有电流流过。 该电流在电阻薄膜层 5开始横向流动， 且由于有四个引出 电极 6， 引出电极 6离光照距离不同，从而造成电流在电阻薄膜层 5再分配， 通过电流的比例分配可计算出光点在表面的二维位置。 具体来说， 通过测量 四个引出电极 6上的四个电流大小， 以及建立传感器正中心位置为原点， 且 横向为 X方向， 纵向为 y方向的坐标系， 利用以下公式确定光点位置在坐标 系中的坐标 (x, y ) :
式中， L为相对的两个引出电极 6之间的距离， 单位： 米； II为位于左 侧的引出电极上流过的电流， 单位： 安培； ：^为位于右侧的引出电极上流过 的电流， 单位： 安培； Ιτ为位于前侧的引出电极上流过的电流， 单位： 安培； IB为位于后侧的引出电极上流过的电流， 单位： 安培。
该结构的传感器的制作过程为： 首先选取半导体材料， 如硅片， 制成半 导体层 1， 然后通过氧化在半导体层 1的上表面生长一层绝缘薄膜层 2， 再 通过溅射或蒸发原理依次在表面沉积金属导电薄膜层 3 (比如金属铝）、光敏 电阻薄膜层 4 (比如 CdS)、 电阻薄膜层 5 (比如 IT0) 和金属铝， 接下来通 过光刻及腐蚀形成引出电极 6， 最后在通过光刻、 腐蚀电阻薄膜层 5和光敏 电阻薄膜层 4露出金属导电薄膜层 3。 整个工艺都是薄膜工艺， 因此不仅可 以在硅圆片上作， 甚至可以在陶瓷， 玻璃等其他基材上完成上述传感器的制 作。
进一步， 所述的电阻薄膜层 5 由透明引出电极材料制成， 例如氧化铟 锡 （IT0)。 采用 IT0的优点是导电且透明， 由于是金属氧化物， 因此电阻比 纯金属更大， 更适合作为电阻。
进一步， 所述的光敏电阻薄膜层 4由硫化镉制成。 当然光敏电阻薄膜层 4还可以是其他光敏材料制成， 例如硫化铝、 硫化铅或者硫化铋。
如图 2、 图 3所示， 本发明提出的结构不存在 ΡΝ结， 工作原理和 PIN器 件的工作原理不同， 当光照使某点的光敏材料电阻急剧变低时， 可以产生数 毫安到数十毫安的电流， 相比 PIN结构导通的微安或亚微安级电流， 电流大 小高 2-4个量级。 因此检测灵敏度高。

Claims

权 利 要 求 书
1.一种用于检测二维光点位置的传感器， 其特征在于， 该传感器包括半 导体层 （1)、 绝缘薄膜层 （2)、 金属导电薄膜层 （3)、 光敏电阻薄膜层
(4)、 电阻薄膜层 （5) 和四个大小相同的引出电极 （6)， 半导体层 （1) 位 于最下方， 绝缘薄膜层 （2)、 金属导电薄膜层 （3)、 光敏电阻薄膜层 （4) 和电阻薄膜层 （5) 从下向上依次贴合布设在半导体层 （1) 的顶面， 并且光 敏电阻薄膜层 （4) 的顶面面积和电阻薄膜层 （5) 的顶面面积分别小于金属 导电薄膜层 （3) 的顶面面积， 引出电极 （6) 连接在电阻薄膜层 （5) 的顶 面， 引出电极 （6) 之间有间隙， 且四个引出电极 （6) 位于正方形的四条边 上， 且相对的两个引出电极 （6) 围绕正方形的中心点相互对称。
2.按照权利要求 1 所述的用于检测二维光点位置的传感器， 其特征在 于， 所述的电阻薄膜层 （5) 由透明引出电极材料制成。
3.按照权利要求 1 所述的用于检测二维光点位置的传感器， 其特征在 于， 所述的光敏电阻薄膜层 （4) 由硫化镉制成。
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3605018A1 (de) * 1986-02-18 1987-08-20 Messerschmitt Boelkow Blohm Verfahren und vorrichtungen zur beruehrungslosen zweidimensionalen ortbestimmung eines messpunktes auf einer messflaeche
JPS63278284A (ja) * 1987-05-09 1988-11-15 Fujitsu Ltd 二次元光位置検出装置
CN1031779A (zh) * 1987-08-12 1989-03-15 中山大学 非晶硅光位置敏感器件
JPH04363607A (ja) * 1991-06-10 1992-12-16 Mitsubishi Electric Corp ２次元光位置検出器
US5455415A (en) * 1992-08-25 1995-10-03 Nippondenso Co., Ltd. Insolation sensor
CN101706258A (zh) * 2009-11-23 2010-05-12 卢能晓 电阻式光点位置传感器

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3605018A1 (de) * 1986-02-18 1987-08-20 Messerschmitt Boelkow Blohm Verfahren und vorrichtungen zur beruehrungslosen zweidimensionalen ortbestimmung eines messpunktes auf einer messflaeche
JPS63278284A (ja) * 1987-05-09 1988-11-15 Fujitsu Ltd 二次元光位置検出装置
CN1031779A (zh) * 1987-08-12 1989-03-15 中山大学 非晶硅光位置敏感器件
JPH04363607A (ja) * 1991-06-10 1992-12-16 Mitsubishi Electric Corp ２次元光位置検出器
US5455415A (en) * 1992-08-25 1995-10-03 Nippondenso Co., Ltd. Insolation sensor
CN101706258A (zh) * 2009-11-23 2010-05-12 卢能晓 电阻式光点位置传感器

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
CHEN, DONGYAN.: "Study on characteristic of PSD and development of PSD array device. Chinese doctoral dissertations & master's theses full-text database (master)", INFORMATION TECHNOLOGY, vol. 2, 20 June 2005 (2005-06-20), pages 44 - 45 *

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