WO2013179569A1 - Procédé pour nettoyer une tranche de semi-conducteur - Google Patents

Procédé pour nettoyer une tranche de semi-conducteur Download PDF

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Publication number
WO2013179569A1
WO2013179569A1 PCT/JP2013/002849 JP2013002849W WO2013179569A1 WO 2013179569 A1 WO2013179569 A1 WO 2013179569A1 JP 2013002849 W JP2013002849 W JP 2013002849W WO 2013179569 A1 WO2013179569 A1 WO 2013179569A1
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WO
WIPO (PCT)
Prior art keywords
cleaning
semiconductor wafer
overwater
concentration
hydrogen peroxide
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PCT/JP2013/002849
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English (en)
Japanese (ja)
Inventor
均 椛澤
阿部　達夫
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信越半導体株式会社
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Filing date
Publication date
Application filed by 信越半導体株式会社 filed Critical 信越半導体株式会社
Publication of WO2013179569A1 publication Critical patent/WO2013179569A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only

Definitions

  • the present invention relates to a method for cleaning a semiconductor wafer.
  • Patent Document 1 describes a silicon wafer cleaning method in which HF cleaning is performed after SC1 cleaning, and then SC1 cleaning is performed again.
  • the surface of the semiconductor wafer is usually oxidized with ozone water after HF cleaning.
  • the ozone water treatment tank of the immersion type cleaning device As described above, when cleaning with SC1 ⁇ HF ⁇ ozone water is performed, the ozone water is extremely unstable. Therefore, in the ozone water treatment tank of the immersion type cleaning device, the concentration is constantly lowered with time. . Originally, it is preferable that the ozone concentration in the cleaning tank is uniform, but in reality, there is a partial difference in concentration between the newly supplied ozone water and the ozone water in the cleaning tank whose concentration has been attenuated. Has occurred.
  • the present invention has been made in view of the above-described problems, and can reduce the unevenness of the surface roughness (haze) of the semiconductor wafer due to the cleaning, and can clean the semiconductor wafer effectively. It aims to provide a method.
  • the present invention provides a semiconductor wafer cleaning method, comprising: a first cleaning process for SC1 cleaning the semiconductor wafer; and a second cleaning process for cleaning the semiconductor wafer after the first cleaning process.
  • a semiconductor wafer cleaning method comprising: a cleaning step; and a third cleaning step of cleaning the semiconductor wafer with hydrogen peroxide after the second cleaning step.
  • the semiconductor wafer can be cleaned without causing unevenness in the surface roughness (haze) of the semiconductor wafer, and a higher quality semiconductor wafer can be obtained.
  • the temperature of the hydrogen peroxide solution is preferably 20 to 80 ° C.
  • the concentration of the hydrogen peroxide solution is preferably 0.1 to 30 wt%.
  • uneven oxidation on the surface of the semiconductor wafer due to cleaning can be reduced, and the semiconductor wafer can be cleaned without causing unevenness in the surface roughness (haze) of the semiconductor wafer.
  • FIG. 10 shows the particle level of the cleaned silicon wafer when the liquid temperature in the overwater cleaning in Examples 1 to 9 and Comparative Example 1 is changed.
  • the particle levels of the silicon wafer after cleaning when the solution concentration in the overwater cleaning is changed in Examples 10 to 15 and Comparative Example 1 are shown.
  • 7 shows the evaluation results of the haze map and the hazyness of the silicon wafer after the first to third cleaning steps in Examples 1 to 6 and Comparative Example 1.
  • FIG. FIG. 7 shows the evaluation results of the haze map and the hazyness of the silicon wafer after the first to third cleaning steps in Examples 7 to 13.
  • FIG. FIG. 14 shows the haze map and the evaluation results of the haze irregularity of the silicon wafer after the first to third cleaning steps in Examples 14 and 15.
  • the semiconductor wafer is SC1 cleaned with a mixed cleaning solution of ammonia, hydrogen peroxide, and water (first cleaning step).
  • SC1 cleaning particles attached to the surface of the semiconductor wafer by etching are lifted off and removed.
  • the mixing ratio of ammonia, hydrogen peroxide and water, and the temperature of the SC1 cleaning liquid are not particularly limited. Any of the commonly employed conditions can be applied.
  • the semiconductor wafer can be rinsed with pure water.
  • the SC1 cleaned semiconductor wafer is HF cleaned with an HF aqueous solution (second cleaning step).
  • the HF cleaning by removing the oxide film on the surface of the semiconductor wafer formed by the SC1 cleaning, particles on the surface of the semiconductor wafer strongly bonded to the oxide film are removed by lifting off, and heavy metals in the oxide film are also removed. be able to.
  • concentration of HF aqueous solution is not specifically limited.
  • the surface of the semiconductor wafer after HF cleaning is a hydrophobic surface and particles are likely to adhere. Therefore, in order to prevent particles from reattaching to the surface of the semiconductor wafer, in the present invention, the semiconductor wafer after HF cleaning is washed with hydrogen peroxide water to oxidize the surface (third cleaning step).
  • the temperature of the hydrogen peroxide solution is preferably 20 to 80 ° C.
  • the temperature of the hydrogen peroxide solution is 20 ° C. or higher, the effect of preventing the reattachment of particles can be maintained, so that the particle level after cleaning becomes better.
  • the temperature of the hydrogen peroxide solution is 80 ° C. or lower, the evaporation amount of the cleaning liquid can be kept constant and bubbles can be prevented from increasing in the cleaning liquid, so that hazy irregularities occur in the semiconductor wafer after cleaning. This can be suppressed more effectively.
  • the concentration of the hydrogen peroxide solution is preferably 0.1 to 30 wt%.
  • the concentration of the hydrogen peroxide solution is 0.1 wt% or more, it is possible to suppress the occurrence of hazyness in the semiconductor wafer by the cleaning, and the particle level after the cleaning becomes good.
  • the concentration of the hydrogen peroxide solution is 30 wt% or less, the evaporation amount of hydrogen peroxide from the cleaning liquid can be kept appropriate, and the burden on the exhaust equipment can be prevented from increasing.
  • Example 1 First, a silicon wafer having a diameter of 300 mm, a crystal orientation ⁇ 100>, and a P-type 10 ⁇ cm was cleaned with SC1 (first cleaning step), rinsed with ultrapure water, then washed with HF (second cleaning step), Washing with water (third washing step) was performed continuously. Then, the silicon wafer that had been cleaned after the third cleaning step was dried. Particles ( ⁇ 41 nm) and haze of the dried silicon wafer were measured with a particle counter.
  • the SC1 cleaning liquid used had a mixing ratio of ammonia, superwater, and water of 1: 1: 10, and the temperature of the SC1 cleaning liquid was 70 ° C.
  • the first to third cleaning steps were performed with the HF concentration in the second cleaning step being 1.5%, the overwater concentration in the third cleaning step being 3.0 wt%, and the temperature of the overwater being 10 ° C.
  • Example 2 The first to third washing steps were performed in the same manner as in Example 1 except that the temperature of the overwater in the overwater washing was 20 ° C.
  • Example 3 The first to third washing steps were performed in the same manner as in Example 1 except that the temperature of the overwater in the overwater washing was 30 ° C.
  • Example 4 The first to third washing steps were performed in the same manner as in Example 1 except that the temperature of the overwater in the overwater washing was 40 ° C.
  • Example 5 The first to third washing steps were performed in the same manner as in Example 1 except that the temperature of the overwater in the overwater washing was 50 ° C.
  • Example 6 The first to third washing steps were carried out in the same manner as in Example 1 except that the temperature of the overwater in the overwater washing was 60 ° C.
  • Example 7 The first to third washing steps were performed in the same manner as in Example 1 except that the temperature of the overwater in the overwater washing was set to 70 ° C.
  • Example 8 The first to third washing steps were performed in the same manner as in Example 1 except that the temperature of the overwater in the overwater washing was 80 ° C.
  • Example 9 The first to third washing steps were performed in the same manner as in Example 1 except that the temperature of the overwater in the overwater washing was 90 ° C.
  • Example 10 The first to third washing steps were performed in the same manner as in Example 1 except that the temperature of the overwater in the overwater washing was 80 ° C. and the concentration of the overwater was 0.03 wt%.
  • Example 11 The first to third cleaning steps were performed in the same manner as in Example 10 except that the concentration of overwater was 0.1 wt%.
  • Example 12 The first to third cleaning steps were performed in the same manner as in Example 10 except that the concentration of overwater was 0.3 wt%.
  • Example 13 The first to third cleaning steps were performed in the same manner as in Example 10 except that the concentration of overwater was 1.0 wt%.
  • Example 14 The first to third cleaning steps were carried out in the same manner as in Example 10 except that the concentration of overwater was 10.0 wt%.
  • Example 15 The first to third cleaning steps were performed in the same manner as in Example 10 except that the concentration of overwater was 30.0 wt%.
  • Example 1 The first and second cleaning steps were performed in the same manner as in Example 1. Thereafter, the silicon wafer was cleaned with 10 ppm of ozone water instead of cleaning with excess water.
  • the number of particles on the surface of the silicon wafer after washing with water was as small as about 15.
  • the number of particles was as good as 17 particles.
  • Comparative Example 1 As shown in FIGS. 2 and 3, the number of particles on the surface of the silicon wafer after cleaning was not significantly different from that of the Example. However, as shown in FIG. 4, since the hazyness was generated on the surface of the silicon wafer after the ozone water cleaning, the quality of the silicon wafer after the cleaning was poor.
  • the present invention is not limited to the above embodiment.
  • the above-described embodiment is an exemplification, and the present invention has substantially the same configuration as the technical idea described in the claims of the present invention, and any device that exhibits the same function and effect is the present invention. It is included in the technical scope of the invention.

Abstract

La présente invention concerne un procédé pour nettoyer une tranche de semi-conducteur. Ce procédé comprend les étapes suivantes : une première étape de nettoyage (1) pour réaliser un nettoyage SC1 par rapport à la tranche de semi-conducteur ; une seconde étape de nettoyage (2) pour réaliser un nettoyage HF par rapport à la tranche de semi-conducteur après la première étape de nettoyage (1) ; et une troisième étape de nettoyage (3) pour nettoyer la tranche de semi-conducteur en utilisant une solution de peroxyde d'hydrogène après la seconde étape de nettoyage (2). En conséquence, la non-uniformité de la rugosité de surface (brume) de la tranche de semi-conducteur due au nettoyage est réduite, et la tranche de semi-conducteur peut être nettoyée efficacement.
PCT/JP2013/002849 2012-06-01 2013-04-26 Procédé pour nettoyer une tranche de semi-conducteur WO2013179569A1 (fr)

Applications Claiming Priority (2)

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JP2012126528A JP2013251461A (ja) 2012-06-01 2012-06-01 半導体ウェーハの洗浄方法
JP2012-126528 2012-06-01

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WO2013179569A1 true WO2013179569A1 (fr) 2013-12-05

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TW (1) TW201351498A (fr)
WO (1) WO2013179569A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105551940A (zh) * 2016-01-11 2016-05-04 上海华虹宏力半导体制造有限公司 去除含有颗粒缺陷的光刻抗反射层的方法
WO2023090009A1 (fr) * 2021-11-16 2023-05-25 信越半導体株式会社 Procédé de nettoyage de plaquette de silicium et procédé de production de plaquette de silicium ayant un film d'oxyde naturel

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109841496A (zh) * 2017-11-27 2019-06-04 东莞新科技术研究开发有限公司 半导体硅片的清洗方法
JP2019161161A (ja) * 2018-03-16 2019-09-19 栗田工業株式会社 基板の洗浄装置及び基板の洗浄方法
JP6729632B2 (ja) * 2018-05-29 2020-07-22 信越半導体株式会社 シリコンウェーハの洗浄方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001044429A (ja) * 1999-08-03 2001-02-16 Nec Corp ゲート絶縁膜形成前処理方法及びその前処理装置
JP2009158531A (ja) * 2007-12-25 2009-07-16 Fujitsu Microelectronics Ltd 半導体基板の処理方法及び半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001044429A (ja) * 1999-08-03 2001-02-16 Nec Corp ゲート絶縁膜形成前処理方法及びその前処理装置
JP2009158531A (ja) * 2007-12-25 2009-07-16 Fujitsu Microelectronics Ltd 半導体基板の処理方法及び半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105551940A (zh) * 2016-01-11 2016-05-04 上海华虹宏力半导体制造有限公司 去除含有颗粒缺陷的光刻抗反射层的方法
WO2023090009A1 (fr) * 2021-11-16 2023-05-25 信越半導体株式会社 Procédé de nettoyage de plaquette de silicium et procédé de production de plaquette de silicium ayant un film d'oxyde naturel

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TW201351498A (zh) 2013-12-16

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