JP2013251461A - 半導体ウェーハの洗浄方法 - Google Patents

半導体ウェーハの洗浄方法 Download PDF

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Publication number
JP2013251461A
JP2013251461A JP2012126528A JP2012126528A JP2013251461A JP 2013251461 A JP2013251461 A JP 2013251461A JP 2012126528 A JP2012126528 A JP 2012126528A JP 2012126528 A JP2012126528 A JP 2012126528A JP 2013251461 A JP2013251461 A JP 2013251461A
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JP
Japan
Prior art keywords
cleaning
semiconductor wafer
overwater
washing
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012126528A
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English (en)
Japanese (ja)
Inventor
Hitoshi Kabasawa
均 椛澤
Tatsuo Abe
達夫 阿部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP2012126528A priority Critical patent/JP2013251461A/ja
Priority to PCT/JP2013/002849 priority patent/WO2013179569A1/fr
Priority to TW102116254A priority patent/TW201351498A/zh
Publication of JP2013251461A publication Critical patent/JP2013251461A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
JP2012126528A 2012-06-01 2012-06-01 半導体ウェーハの洗浄方法 Pending JP2013251461A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012126528A JP2013251461A (ja) 2012-06-01 2012-06-01 半導体ウェーハの洗浄方法
PCT/JP2013/002849 WO2013179569A1 (fr) 2012-06-01 2013-04-26 Procédé pour nettoyer une tranche de semi-conducteur
TW102116254A TW201351498A (zh) 2012-06-01 2013-05-07 半導體晶圓的洗淨方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012126528A JP2013251461A (ja) 2012-06-01 2012-06-01 半導体ウェーハの洗浄方法

Publications (1)

Publication Number Publication Date
JP2013251461A true JP2013251461A (ja) 2013-12-12

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ID=49672800

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012126528A Pending JP2013251461A (ja) 2012-06-01 2012-06-01 半導体ウェーハの洗浄方法

Country Status (3)

Country Link
JP (1) JP2013251461A (fr)
TW (1) TW201351498A (fr)
WO (1) WO2013179569A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109841496A (zh) * 2017-11-27 2019-06-04 东莞新科技术研究开发有限公司 半导体硅片的清洗方法
JP2019161161A (ja) * 2018-03-16 2019-09-19 栗田工業株式会社 基板の洗浄装置及び基板の洗浄方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105551940A (zh) * 2016-01-11 2016-05-04 上海华虹宏力半导体制造有限公司 去除含有颗粒缺陷的光刻抗反射层的方法
JP6729632B2 (ja) * 2018-05-29 2020-07-22 信越半導体株式会社 シリコンウェーハの洗浄方法
JP2023073560A (ja) * 2021-11-16 2023-05-26 信越半導体株式会社 シリコンウェーハの洗浄方法及び自然酸化膜付きシリコンウェーハの製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001044429A (ja) * 1999-08-03 2001-02-16 Nec Corp ゲート絶縁膜形成前処理方法及びその前処理装置
JP2009158531A (ja) * 2007-12-25 2009-07-16 Fujitsu Microelectronics Ltd 半導体基板の処理方法及び半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001044429A (ja) * 1999-08-03 2001-02-16 Nec Corp ゲート絶縁膜形成前処理方法及びその前処理装置
JP2009158531A (ja) * 2007-12-25 2009-07-16 Fujitsu Microelectronics Ltd 半導体基板の処理方法及び半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109841496A (zh) * 2017-11-27 2019-06-04 东莞新科技术研究开发有限公司 半导体硅片的清洗方法
JP2019161161A (ja) * 2018-03-16 2019-09-19 栗田工業株式会社 基板の洗浄装置及び基板の洗浄方法

Also Published As

Publication number Publication date
WO2013179569A1 (fr) 2013-12-05
TW201351498A (zh) 2013-12-16

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