WO2013174210A1 - 一种闪存设备中数据存储的方法及装置 - Google Patents

一种闪存设备中数据存储的方法及装置 Download PDF

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Publication number
WO2013174210A1
WO2013174210A1 PCT/CN2013/075259 CN2013075259W WO2013174210A1 WO 2013174210 A1 WO2013174210 A1 WO 2013174210A1 CN 2013075259 W CN2013075259 W CN 2013075259W WO 2013174210 A1 WO2013174210 A1 WO 2013174210A1
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Prior art keywords
data
written
sample library
logical address
flash memory
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PCT/CN2013/075259
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English (en)
French (fr)
Inventor
邓恩华
李志雄
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深圳市江波龙电子有限公司
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Publication of WO2013174210A1 publication Critical patent/WO2013174210A1/zh

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/10—Providing a specific technical effect
    • G06F2212/1032—Reliability improvement, data loss prevention, degraded operation etc
    • G06F2212/1036—Life time enhancement

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  • the present invention relates to the field of data storage technologies for memories, and in particular, to a method and apparatus for data storage in a flash memory device.
  • flash memory has the advantages of being writable, erasable, and capable of saving data after power is turned off.
  • the flash memory since the flash memory is in data storage, it needs to be performed by "write-erase-rewrite", that is, after performing a "write” operation on the same flash block in the flash memory, it is necessary to update the data therein. After an "erase”, you can "rewrite” the same flash block.
  • the number of erasures per flash block is limited. If the number of "erasing” exceeds the limit (for example, 10,000 times), wear will occur, which may result in the flash block not storing data or storing data lost.
  • the performance of flash memory reduces the life of flash memory.
  • the purpose of the embodiments of the present invention is to provide a method for data storage in a flash memory device, so as to solve the problem that the flash memory block is excessively erased when the existing flash memory device performs data storage, causing serious wear of the flash memory block and reducing the service life of the flash memory device. .
  • the embodiment of the present invention is implemented as a method for data storage in a flash memory device, and the method includes:
  • the write instruction is not executed, and the logical address is pointed to the logical address of the previously written data saved with the data to be written.
  • Another object of the embodiments of the present invention is to provide an apparatus for data storage in a flash memory device, the apparatus comprising:
  • An instruction receiving unit configured to receive a write instruction sent by the host system, where the write instruction includes data to be written and a logical address of the data to be written written into the flash memory;
  • a determining unit configured to determine whether the data to be written has been previously written
  • a writing unit configured to write the to-be-written data according to the logical address when the determining unit determines that the result is no
  • a pointing unit configured to: when the determining unit determines that the result is YES, does not execute the write instruction, and points the logical address to a logical address that is previously written and saved in the same data as the data to be written. .
  • the embodiment of the present invention first determines whether the data to be written in the write command has been previously written, and if so, does not execute the write command,
  • the logical address in the write instruction is directed to a logical address that is previously written with the same data as the data to be written, thereby effectively reducing a write operation to the flash memory, thereby reducing an erase operation on the flash block and avoiding Frequent wear and tear of flash memory, improve the performance of flash memory, extend the life of flash memory devices, and have strong practicability.
  • FIG. 1 is a system scenario diagram applicable to a data storage method in a flash memory device according to Embodiment 1 of the present invention
  • FIG. 2 is a flowchart of implementing a data storage method in a flash memory device according to Embodiment 2 of the present invention
  • FIG. 3 is a flowchart of implementing a data storage method in a flash memory device according to Embodiment 3 of the present invention.
  • FIG. 4 is a flowchart of implementing a data storage method in a flash memory device according to Embodiment 4 of the present invention.
  • FIG. 5 is a flowchart of implementing a data storage method in a flash memory device according to Embodiment 5 of the present invention.
  • FIG. 6 is a structural diagram of a data storage device in a flash memory device according to Embodiment 6 of the present invention.
  • FIG. 7 is a structural diagram of a data storage device in a flash memory device according to Embodiment 7 of the present invention.
  • FIG. 8 is a structural diagram showing the structure of a data storage device in a flash memory device according to Embodiment 8 of the present invention.
  • Embodiment 1 is a diagrammatic representation of Embodiment 1:
  • FIG. 1 is a schematic diagram of a system scenario applicable to a data storage method in a flash memory device according to Embodiment 1 of the present invention. For convenience of description, only parts related to the present embodiment are shown.
  • the system includes a host system 1 and a flash memory device 2.
  • the host system 1 is a computer system including a microprocessor 11, a random access memory RAM 12, a data transmission interface 13, and an input or output device 14.
  • the host system 1 is connected to the flash memory device 2 via the data transmission interface 13.
  • the user issues a write command to the microprocessor 11 via the input/output device 14, and the microprocessor 11 transmits the write command to the flash device 2 via the data transfer interface 13, the write command including the RAM 12
  • the microprocessor 11 transmits the write command to the flash device 2 via the data transfer interface 13, the write command including the RAM 12
  • the data to be written and the logical address of the data to be written written to the flash memory is connected to the flash memory device 2 via the data transmission interface 13.
  • the flash device 2 After receiving the write command, the flash device 2 determines whether the data to be written in the write command has been previously written, and if so, does not execute the write command, and only needs to write the write command.
  • the logical address points to a logical address that has been previously written to save the same data as the data to be written, otherwise the data to be written in the write command is written to the flash memory device 2 according to the logical address.
  • the host system is any system that can store data, such as a computer system, a digital camera, a video camera, a communication device, an audio player, a video broadcaster, and the like.
  • Embodiment 2 is a diagrammatic representation of Embodiment 1:
  • FIG. 2 is a flowchart showing an implementation process of a data storage method in a flash memory device according to Embodiment 2 of the present invention. The process is detailed as follows:
  • step S201 a write command sent by the host system is received.
  • the write command includes but is not limited to the following information: data to be written and a logical address of the data to be written written to the flash memory.
  • the host system is any system that can store data, such as a computer system, a digital camera, a video camera, a communication device, an audio player, a video broadcaster, and the like.
  • step S202 it is determined whether the data to be written has been previously written. If the determination result is "YES”, then step S204 is performed, and if the determination result is "NO”, step S203 is performed.
  • step S204 in order to reduce the write operation to the flash memory, before the execution of the write instruction, it is determined whether the data to be written already exists in the flash memory, that is, whether the data to be written has been previously written. If yes, go to step S204, otherwise go to step S203.
  • step S203 a write instruction is executed, and the data to be written is written according to the logical address, that is, the data to be written is stored to a physical address corresponding to the logical address.
  • step S204 the write instruction is not executed, and the logical address is pointed to the logical address of the data that has been previously written to be the same as the data to be written.
  • the write command before the data to be written in the write command has been written, that is, when the flash memory is already present in the flash memory, the write command is not executed, and only the logical address in the write command is pointed to before The logical address of the same data saved as the data to be written is written, and the user is reminded that the data has been written, thereby effectively reducing the write operation to the flash memory, thereby reducing the erase operation of the flash block and avoiding the flash memory. Frequent wear and tear, improve the performance of flash memory devices, and extend the life of flash memory devices.
  • Embodiment 3 is a diagrammatic representation of Embodiment 3
  • FIG. 3 is a flowchart showing an implementation process of a data storage method in a flash memory device according to Embodiment 3 of the present invention. The process is detailed as follows:
  • step S301 a sample library is created, the sample library containing the written data and a logical address corresponding to the data.
  • the sample library is a static sample library, and the sample library includes frequently written data and a logical address corresponding to the data, as shown in Table 1.
  • the frequently written data is data that has been written and the number of writes is greater than a preset value (for example, 5 times):
  • step S302 a write command sent by the host system is received, where the write command includes data to be written and a logical address of the data to be written written to the flash memory.
  • step S303 it is determined whether there is data in the sample library that is the same as the data to be written. If the determination result is "Yes”, step S305 is performed, and if the determination result is "No”, step S304 is performed;
  • step S305 it is determined whether there is data in the static sample library that is the same as the data to be written. If the determination result is "Yes”, step S305 is performed, and if the determination result is "No”, step S304 is performed;
  • step S304 a write instruction is executed, and the data to be written is written according to the logical address
  • step S305 the write instruction is not executed, and the logical address is pointed to the logical address of the previously written data saved with the data to be written.
  • the data to be written is AA, according to Table 1, it is known that it exists in the flash memory, and its logical address is directed to the logical address 0X00010010 corresponding to AA in Table 1.
  • step S301 of this embodiment may be placed after step S302, and only the sample library is created before the determination in step S303.
  • the method further includes:
  • the data AA is the data in the sample library, and the corresponding logical address is 0X00010010; the data to be written 66 is also written to the flash memory address is 0X00010010, compared with the sample library, the data to be written 66 If not previously written, the data to be written 66 and its corresponding logical address 0X00010010 are saved to the sample library, and the logical address saved by the previous data AA is written as new data 66, then the data AA There is no corresponding logical address. In this case, when the current remaining storage space of the flash memory is less than a preset threshold, the data AA is retained in the sample library, otherwise the data AA is deleted.
  • the threshold value of the setting in this embodiment is greater than or equal to the storage space required for data to be written, because the storage space required for each data to be written is small, and if the storage space is less than waiting When the size of the data is written, releasing the space occupied by the invalid data in the sample library will reduce the writing efficiency.
  • Embodiment 4 is a diagrammatic representation of Embodiment 4:
  • FIG. 4 is a flowchart showing an implementation process of a data storage method in a flash memory device according to Embodiment 4 of the present invention. The process is detailed as follows:
  • step S401 a sample library is created, and the sample library is a dynamic sample library, and the dynamic sample library includes a feature value of the written data and a logical address corresponding to the written data.
  • step S402 a write command sent by the host system is received, where the write command includes data to be written and a logical address of the data to be written written to the flash memory.
  • step S403 the feature value of the data to be written is acquired.
  • the feature value of the data to be written may be acquired by a hash algorithm or other similar algorithm.
  • step S404 it is determined whether there is a feature value in the dynamic sample library that is the same as the feature value of the data to be written. If the determination result is “Yes”, step S406 is performed, and if the determination result is “No”, Then executing step S405;
  • step S405 a write instruction is executed, and the data to be written is written according to the logical address
  • step S406 the write instruction is not executed, and the logical address is pointed to the logical address of the data that is previously written to be the same as the data to be written, and the feature value of the data to be written is set. And a logical address corresponding to the data to be written is stored in the dynamic sample library.
  • the feature value not included in the dynamic sample library and the logical address saved by the data corresponding to the feature value are stored in the dynamic sample library.
  • a dynamic sample library is used to determine whether the data to be written has been previously written. Since the dynamic sample library contains all the written data, the accuracy of the determination can be effectively improved.
  • step S401 of the embodiment may be placed after the step S402, and only the dynamic sample library is created before the determination in step S404.
  • Embodiment 5 is a diagrammatic representation of Embodiment 5:
  • FIG. 5 is a flowchart showing an implementation process of a data storage method in a flash memory device according to Embodiment 5 of the present invention. The process is detailed as follows:
  • a sample library is created, where the sample library includes a static sample library and a dynamic sample library, the static sample library includes data that has been written and the number of writes is greater than a preset value, and corresponding to the data.
  • the dynamic sample library includes a feature value of the written data and a logical address corresponding to the written data.
  • step S502 a write command sent by the host system is received, where the write command includes data to be written and a logical address of the data to be written written to the flash memory.
  • step S503 the feature value of the data to be written is acquired.
  • step S504 it is determined whether there is data in the static sample library that is the same as the data to be written. If the determination result is “Yes”, step S507 is performed, and if the determination result is “No”, step S505 is performed. .
  • step S505 it is determined whether there is a feature value in the dynamic sample library that is the same as the feature value of the data to be written. If the determination result is “Yes”, step S507 is performed, and if the determination result is “No”, Then executing step S506;
  • step S506 a write instruction is executed, and the data to be written is written according to the logical address
  • step S507 the write instruction is not executed, and the logical address is pointed to the logical address of the data that is previously written to be the same as the data to be written, and the feature value of the data to be written is set. And a logical address corresponding to the data to be written is stored in the dynamic sample library.
  • the static sample library and the dynamic sample library are created to determine whether the data to be written has been previously written, that is, the efficiency of the determination is ensured and the accuracy of the determination is ensured.
  • step S501 of this embodiment may be placed after step S502, and only the dynamic sample library is created before the determination in step S504.
  • FIG. 6 is a block diagram showing the structure of a data storage device in a flash memory device according to Embodiment 6 of the present invention. For convenience of description, only parts related to the embodiment of the present invention are shown.
  • the data storage device in the flash memory device can be applied to the storage device, and can be a software unit, a hardware unit or a combination of hardware and software running in the storage device, or can be integrated into the storage device as a separate pendant or run in the storage device.
  • the application system of the device can be applied to the storage device, and can be a software unit, a hardware unit or a combination of hardware and software running in the storage device, or can be integrated into the storage device as a separate pendant or run in the storage device.
  • the data storage device in the flash memory device includes an instruction receiving unit 61, a judging unit 62, a writing unit 63, and a pointing unit 64.
  • the specific functions of each unit are as follows:
  • the instruction receiving unit 61 is configured to receive a write command sent by the host system, where the write command includes data to be written and a logical address of the data to be written written into the flash memory;
  • the determining unit 62 is configured to determine whether the data to be written has been previously written
  • a writing unit 63 configured to write the data to be written according to the logical address when the determining unit 62 determines that the result is no;
  • the pointing unit 64 is configured to: when the determining unit 62 determines that the result is YES, does not execute the write instruction, and points the logical address to the previously written data that is the same as the data to be written. Logical address.
  • the device further includes:
  • a sample library creating unit 65 configured to create a sample library, the sample library includes the written data and a logical address corresponding to the data;
  • the sample library is a static sample library
  • the static sample library includes data that has been written and written a number of times greater than a preset value and a logical address corresponding to the data.
  • the determining unit 62 is specifically configured to determine whether there is data in the sample library that is the same as the data to be written.
  • the determining unit 62 is specifically configured to determine whether there is data in the static sample library that is the same as the data to be written.
  • the device further comprises:
  • the deleting unit 66 is configured to delete, when the determining unit 62 determines that the result is no, and the current remaining storage space of the flash memory is less than a preset threshold, deleting data corresponding to the logical address in the sample library.
  • the data storage device in the flash memory device provided in this embodiment may use the data storage method in the foregoing corresponding flash memory device.
  • the data storage method in the foregoing corresponding flash memory device may use the data storage method in the foregoing corresponding flash memory device.
  • FIG. 7 is a block diagram showing the structure of a data storage device in a flash memory device according to Embodiment 7 of the present invention. For the convenience of description, only parts related to the embodiment of the present invention are shown.
  • the data storage device in the flash memory device can be applied to the storage device, and can be a software unit, a hardware unit or a combination of hardware and software running in the storage device, or can be integrated into the storage device as a separate pendant or run in the storage device.
  • the application system of the device can be applied to the storage device, and can be a software unit, a hardware unit or a combination of hardware and software running in the storage device, or can be integrated into the storage device as a separate pendant or run in the storage device.
  • the data storage device in the flash memory device includes a sample library creating unit 71, an instruction receiving unit 72, an obtaining unit 73, a judging unit 74, a writing unit 75, and a pointing unit 76.
  • a sample library creating unit 71 an instruction receiving unit 72, an obtaining unit 73, a judging unit 74, a writing unit 75, and a pointing unit 76.
  • the specific functions of each unit are as follows:
  • a sample library creating unit 71 configured to create a sample library, where the sample library is a dynamic sample library, the dynamic sample library includes a feature value of the written data and a logical address corresponding to the written data;
  • the instruction receiving unit 72 is configured to receive a write command sent by the host system, where the write command includes data to be written and a logical address of the data to be written written into the flash memory;
  • An obtaining unit 73 configured to acquire a feature value of the data to be written
  • the determining unit 74 is configured to determine whether the feature value in the dynamic sample library is the same as the feature value of the data to be written;
  • a writing unit 75 configured to write the data to be written according to the logical address of the data to be written to the flash memory when the determining unit 74 determines that the result is no, and the feature of the data to be written And a logical address corresponding to the data to be written is stored in the dynamic sample library;
  • the pointing unit 76 is configured to: when the determining unit 74 determines that the result is YES, does not execute the write instruction, and points the logical address to the previously written data that is the same as the data to be written. Logical address.
  • the device further comprises:
  • the deleting unit 77 is configured to delete, when the determining unit 74 determines that the result is no, and the current remaining storage space of the flash memory is less than a preset threshold, deleting data corresponding to the logical address in the sample library.
  • the data storage device in the flash memory device provided in this embodiment may use the data storage method in the foregoing corresponding flash memory device.
  • the data storage method in the foregoing corresponding flash memory device may use the data storage method in the foregoing corresponding flash memory device.
  • FIG. 8 is a block diagram showing the structure of a data storage device in a flash memory device according to Embodiment 8 of the present invention. For convenience of description, only parts related to the embodiment of the present invention are shown.
  • the data storage device in the flash memory device can be applied to the storage device, and can be a software unit, a hardware unit or a combination of hardware and software running in the storage device, or can be integrated into the storage device as a separate pendant or run in the storage device.
  • the application system of the device can be applied to the storage device, and can be a software unit, a hardware unit or a combination of hardware and software running in the storage device, or can be integrated into the storage device as a separate pendant or run in the storage device.
  • the data storage device in the flash memory device includes a sample library creating unit 81, an instruction receiving unit 82, an obtaining unit 83, a judging unit 84, a writing unit 85, and a pointing unit 86.
  • a sample library creating unit 81 an instruction receiving unit 82, an obtaining unit 83, a judging unit 84, a writing unit 85, and a pointing unit 86.
  • the specific functions of each unit are as follows:
  • a sample library creating unit 81 configured to create a sample library, where the sample library includes a static sample library and a dynamic sample library, the static sample library includes data that has been written and the number of writes is greater than a preset value, and a logical address corresponding to the data, where the dynamic sample library includes a feature value of the written data and a logical address corresponding to the written data;
  • the instruction receiving unit 82 is configured to receive a write command sent by the host system, where the write command includes data to be written and a logical address of the data to be written written into the flash memory;
  • An obtaining unit 83 configured to acquire a feature value of the data to be written
  • the determining unit 84 includes a first determining module 841 and a second determining module 842:
  • the first determining module 841 is configured to determine whether there is data in the static sample library that is the same as the data to be written;
  • a second determining module configured to: when the first determining module 841 determines that the result is negative, determine whether the feature value in the dynamic sample library is the same as the feature value of the data to be written;
  • a writing unit 85 configured to write the data to be written according to the logical address of the data to be written to the flash memory when the second determining module 842 determines that the result is no, and write the data to be written
  • the feature value and the logical address corresponding to the data to be written are stored in the dynamic sample library
  • the pointing unit 86 is configured to: when the first determining module 841 or the second determining module 842 determines that the result is YES, does not execute the write command, and points the logical address to the previously written and the waiting The logical address where the same data is written to the data.
  • the device further comprises:
  • the deleting unit 87 is configured to delete, when the second determining module 842 determines that the result is no, and the current remaining storage space of the flash memory is less than a preset threshold, deleting data corresponding to the logical address in the sample library.
  • the data storage device in the flash memory device provided in this embodiment may use the data storage method in the foregoing corresponding flash memory device.
  • the data storage method in the foregoing corresponding flash memory device may use the data storage method in the foregoing corresponding flash memory device.
  • each unit and module included in the foregoing sixth, seventh, and eighth embodiments are only divided according to functional logic, but are not limited to the above-mentioned division, as long as the corresponding functions can be implemented;
  • the specific names of the respective functional units and modules are also only for convenience of distinguishing from each other, and are not intended to limit the scope of protection of the present invention.
  • the embodiment of the present invention may determine whether the data to be written in the write command has been previously written in a plurality of manners, and writes before determining the data to be written.
  • the write instruction is not executed, and the logical address in the write instruction is pointed to the logical address of the data that has been written before, which is the same as the data to be written, thereby effectively reducing the write to the flash memory. Operation, thereby reducing the erase operation of the flash block, avoiding frequent wear of the flash memory, improving the use performance of the flash memory, extending the service life of the flash memory device, and having strong practicability.

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Abstract

本发明适用于存储器的数据存储技术领域，提供了一种闪存设备中数据存储的方法及装置，所述方法包括：接收主机系统发送的写指令，所述写指令包含有待写入的数据以及所述待写入数据写入闪存的逻辑地址；判断所述待写入数据是否之前已写入；若否，根据所述逻辑地址写入所述待写入数据；若是，不执行所述写指令，将所述逻辑地址指向所述之前已写入的与所述待写入数据相同的数据保存的逻辑地址。通过本发明，可有效减少对闪存的写操作，进而减少对闪存块的擦除操作，避免闪存的频繁磨损，提高闪存设备的使用性能，延长闪存设备的使用寿命。

Description

一种闪存设备中数据存储的方法及装置 技术领域
本发明属于存储器的数据存储技术领域，尤其涉及一种闪存设备中数据存储的方法及装置。
 背景技术
随着信息技术的发展，越来越多的信息系统（例如：MP3、数码相机、智能电视机等）需要内置可擦写的非易失存储介质来存储数据。而在现有的非易失存储介质中，闪存因其体积小、功耗低、不易受物理破坏等优点，在业界得到了广泛的应用。
虽然闪存具有可写入、可擦除以及断电后仍可保存数据等诸多优点。然而，由于闪存在进行数据存储时，需要采用“写入—擦除—再写入”的方式进行，即对闪存中同一闪存块执行一次“写入”操作后，要更新其中的数据，必须做一次“擦除”后，才能“再写入”同一闪存块。而每个闪存块的擦除次数是有限的，如果其“擦除”的次数超过限定值（例如10000次）后就会出现磨损，可能导致该闪存块不能存储数据或者存储的数据丢失，影响闪存的使用性能，降低闪存的使用寿命。
 技术问题
本发明实施例的目的在于提供一种闪存设备中数据存储的方法，以解决现有闪存设备在进行数据存储时闪存块擦写次数过多，导致闪存块磨损严重，减少闪存设备使用寿命的问题。
 技术解决方案
本发明实施例是这样实现的，一种闪存设备中数据存储的方法，所述方法包括：
接收主机系统发送的写指令，所述写指令包含有待写入的数据以及所述待写入数据写入闪存的逻辑地址；
判断所述待写入数据是否之前已写入；
若否，根据所述逻辑地址写入所述待写入数据；
若是，不执行所述写指令，将所述逻辑地址指向所述之前已写入的与所述待写入数据相同的数据保存的逻辑地址。
本发明实施例的另一目的在于提供一种闪存设备中数据存储的装置，所述装置包括：
指令接收单元，用于接收主机系统发送的写指令，所述写指令包含有待写入的数据以及所述待写入数据写入闪存的逻辑地址；
判断单元，用于判断所述待写入数据是否之前已写入；
写入单元，用于在所述判断单元判断结果为否时，根据所述逻辑地址写入所述待写入数据；
指向单元，用于在所述判断单元判断结果为是时，不执行所述写指令，将所述逻辑地址指向所述之前已写入的与所述待写入数据相同的数据保存的逻辑地址。
 有益效果
从上述技术方案可以看出，本发明实施例在接收到写指令后，先判断所述写指令中的待写入数据是否之前已写入过，若是，则不执行所述写指令，只需将所述写指令中的逻辑地址指向之前已写入的与所述待写入数据相同的数据保存的逻辑地址，从而有效减少对闪存的写操作，进而减少对闪存块的擦除操作，避免闪存的频繁磨损，提高闪存的使用性能，延长闪存设备的使用寿命，具有较强的实用性。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。
图1是本发明实施例一提供的闪存设备中数据存储方法所适用的系统场景图；
图2是本发明实施例二提供的闪存设备中数据存储方法的实现流程图；
图3是本发明实施例三提供的闪存设备中数据存储方法的实现流程图；
图4是本发明实施例四提供的闪存设备中数据存储方法的实现流程图；
图5是本发明实施例五提供的闪存设备中数据存储方法的实现流程图；
图6是本发明实施例六提供的闪存设备中数据存储装置的组成结构图；
图7是本发明实施例七提供的闪存设备中数据存储装置的组成结构图；
图8是本发明实施例八提供的闪存设备中数据存储装置的组成结构图。
 本发明的实施方式
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
为了说明本发明所述的技术方案，下面通过具体实施例来进行说明。
实施例一：
图1示出了本发明实施例一提供的闪存设备中数据存储方法所适用的系统场景示意图，为了便于说明，仅示出了与本实施例相关的部分。
如图1所示，该系统包括主机系统1以及闪存设备2。
其中，所述主机系统1为电脑系统，包括微处理器11、随机存取存储器RAM12、数据传输接口13以及输入或输出装置14。
所述主机系统1通过所述数据传输接口13与所述闪存设备2连接。用户通过输入/输出装置14发出写指令给所述微处理器11，所述微处理器11通过数据传输接口13将所述写指令发送所述闪存设备2，所述写指令中包含所述RAM12中的待写入数据以及所述待写入数据写入闪存的逻辑地址。
所述闪存设备2在接收到所述写指令后，判断所述写指令中的待写入数据是否之前已写入过，若是，则不执行所述写指令，只需将所述写指令中的逻辑地址指向之前已写入的与所述待写入数据相同的数据保存的逻辑地址，否则将所述写指令中的待写入数据根据所述逻辑地址写入所述闪存设备2。
在本实施例中，所述主机系统为可存储数据的任意系统，例如电脑系统、数码相机、摄影机、通信装置、音讯播放器、视讯播发器等系统。
需要说明的是，本实施例提供的系统场景只用于解释本发明，并不限定本发明的保护范围。
实施例二：
图2示出了本发明实施例二提供的闪存设备中数据存储方法的实现流程，该方法过程详述如下：
在步骤S201中，接收主机系统发送的写指令。
在本实施例中，所述写指令包括但不限于以下信息：待写入的数据以及所述待写入数据写入闪存的逻辑地址。所述主机系统为可存储数据的任意系统，例如电脑系统、数码相机、摄影机、通信装置、音讯播放器、视讯播发器等系统。
在步骤S202中，判断所述待写入数据是否之前已写入，若判断结果为“是”，则执行步骤S204，若判断结果为“否”，执行步骤S203。
在本实施例中，为了减少对闪存的写操作，在执行所述写指令之前，判断所述闪存中是否已经存在所述待写入数据，即判断所述待写入数据是否之前已写入过，若是则执行步骤S204，否则执行步骤S203。
在步骤S203中，执行写指令，根据所述逻辑地址写入所述待写入数据，即将所述待写入数据存储至与所述逻辑地址对应的物理地址。
在步骤S204中，不执行所述写指令，将所述逻辑地址指向所述之前已写入的与所述待写入数据相同的数据保存的逻辑地址。
在本实施例中，在所述写指令中的待写入数据之前已写入过，即已存在于闪存中时，不执行所述写指令，只将所述写指令中的逻辑地址指向之前已写入的与所述待写入数据相同的数据保存的逻辑地址，并提醒用户该数据已写入过，从而有效减少对闪存的写操作，进而减少对闪存块的擦除操作，避免闪存的频繁磨损，提高闪存设备的使用性能，延长闪存设备的使用寿命。
实施例三：
图3示出了本发明实施例三提供的闪存设备中数据存储方法的实现流程，该方法过程详述如下：
在步骤S301中，创建样本库，所述样本库中包含有已写入的数据以及与所述数据对应的逻辑地址。
优选的是，所述样本库为一静态样本库，所述样本库中包含经常写入的数据及所述数据对应的逻辑地址，如表一所示。其中，所述经常写入的数据为已写入且写入次数大于预设值（例如5次）的数据：
数据值 保存的逻辑地址
00 0X00000001
FF 0X00000110
55 0X00001001
AA 0X00010010
… …
表一
在步骤S302中，接收主机系统发送的写指令，所述写指令包含有待写入的数据以及所述待写入数据写入闪存的逻辑地址。
在步骤S303中，判断所述样本库中是否存在与所述待写入数据相同的数据，如果判断结果为“是”，则执行步骤S305，如果判断结果为“否”，则执行步骤S304；
优选的是，判断所述静态样本库中是否存在与所述待写入数据相同的数据，如果判断结果为“是”，则执行步骤S305，如果判断结果为“否”，则执行步骤S304；
在步骤S304中，执行写指令，根据所述逻辑地址写入所述待写入数据；
在步骤S305中，不执行所述写指令，将所述逻辑地址指向所述之前已写入的与所述待写入数据相同的数据保存的逻辑地址。
例如，当所述待写入数据为AA时，根据表一可知其已存在于闪存中，则将其逻辑地址指向表一中AA对应的逻辑地址0X00010010。
在本实施例中，根据预先建立的静态样本库来判断所述待写入数据是否之前已写入，由于该静态样本库中只包含经常性写入的数据，从而可有效提高判断的效率。
需要说明的是，本实施例的步骤S301可以置于步骤S302之后，只需在步骤S303判断之前创建样本库即可。
作为本发明的另一优选实施例，所述方法还包括：
当所述待写入数据之前未写入，且所述闪存当前剩余的存储空间小于预先设定的临界值时，删除所述样本库中没有逻辑地址对应的数据。
例如，数据AA为样本库中的数据，其对应保存的逻辑地址为0X00010010；待写入数据66，其写入闪存的逻辑地址也为0X00010010，与所述样本库比较发现，待写入数据66之前未写入过，则将待写入数据66及其对应的逻辑地址0X00010010保存至所述样本库，之前的数据AA保存的逻辑地址因为写入了新的数据66，则数据AA 没有了对应的逻辑地址。在这种情况下，当闪存当前剩余的存储空间小于预先设定的临界值时，则将数据AA继续保留在样本库中，否则删除数据AA。
需要说明的是，本实施例中的所述设定的临界值大于或者等于待写入数据需要的存储空间，因为每次的待写入数据需要的存储空间很小，如果等到存储空间小于待写入数据的大小时，再释放样本库中无效数据占用的空间则会降低写入效率。
实施例四：
图4示出了本发明实施例四提供的闪存设备中数据存储方法的实现流程，该方法过程详述如下：
在步骤S401中，创建样本库，所述样本库为动态样本库，所述动态样本库中包含有已写入数据的特征值以及与所述已写入数据对应的逻辑地址。
在步骤S402中，接收主机系统发送的写指令，所述写指令包含有待写入的数据以及所述待写入数据写入闪存的逻辑地址。
在步骤S403中，获取所述待写入数据的特征值。
在本实施例中，所述待写入数据的特征值可以通过哈希算法或者其他类似算法获取。
在步骤S404中，判断所述动态样本库中是否存在与所述待写入数据的特征值相同的特征值，如果判断结果为“是”，则执行步骤S406，如果判断结果为“否”，则执行步骤S405；
在步骤S405中，执行写指令，根据所述逻辑地址写入所述待写入数据；
在步骤S406中，不执行所述写指令，将所述逻辑地址指向所述之前已写入的与所述待写入数据相同的数据保存的逻辑地址，并将该待写入数据的特征值及该待写入数据对应的逻辑地址存储至所述动态样本库。
在本实施例中，将所述动态样本库中不包含的特征值以及该特征值所对应数据所保存的逻辑地址存储至所述动态样本库。
本实施例通过一动态样本库来判断所述待写入数据是否之前已写入，由于该动态样本库中包含所有已写入的数据，从而可有效提高判断的准确率。
需要说明的是，本实施例的步骤S401可以置于步骤S402之后，只需在步骤S404判断之前创建动态样本库即可。
实施例五：
图5示出了本发明实施例五提供的闪存设备中数据存储方法的实现流程，该方法过程详述如下：
在步骤S501中，创建样本库，所述样本库包含静态样本库和动态样本库，所述静态样本库中包含有已写入且写入次数大于预设值的数据以及与所述数据对应的逻辑地址，所述动态样本库中包含有已写入数据的特征值以及与所述已写入数据对应的逻辑地址。
在步骤S502中，接收主机系统发送的写指令，所述写指令包含有待写入的数据以及所述待写入数据写入闪存的逻辑地址。
在步骤S503中，获取所述待写入数据的特征值。
在步骤S504中，判断所述静态样本库中是否存在与所述待写入数据相同的数据，如果判断结果为“是”，则执行步骤S507，如果判断结果为“否”，则执行步骤S505。
在步骤S505中，判断所述动态样本库中是否存在与所述待写入数据的特征值相同的特征值，如果判断结果为“是”，则执行步骤S507，如果判断结果为“否”，则执行步骤S506；
在步骤S506中，执行写指令，根据所述逻辑地址写入所述待写入数据；
在步骤S507中，不执行所述写指令，将所述逻辑地址指向所述之前已写入的与所述待写入数据相同的数据保存的逻辑地址，并将该待写入数据的特征值及该待写入数据对应的逻辑地址存储至所述动态样本库。
本实施例通过创建的静态样本库和动态样本库来判断所述待写入数据是否之前已写入，即保证了判断的效率又能保证判断的准确率。
需要说明的是，本实施例的步骤S501可以置于步骤S502之后，只需在步骤S504判断之前创建动态样本库即可。
实施例六：
图6示出了本发明实施例六提供的闪存设备中数据存储装置的组成结构，为了便于说明，仅示出了与本发明实施例相关的部分。
该闪存设备中数据存储装置可以应用于存储设备中，可以是运行于存储设备内的软件单元、硬件单元或者软硬件相结合的单元，也可以作为独立的挂件集成到存储设备中或者运行于存储设备的应用系统中。
该闪存设备中数据存储装置包括指令接收单元61、判断单元62、写入单元63以及指向单元64。其中，各单元的具体功能如下：
指令接收单元61，用于接收主机系统发送的写指令，所述写指令包含有待写入的数据以及所述待写入数据写入闪存的逻辑地址；
判断单元62，用于判断所述待写入数据是否之前已写入；
写入单元63，用于在所述判断单元62判断结果为否时，根据所述逻辑地址写入所述待写入数据；
指向单元64，用于在所述判断单元62判断结果为是时，不执行所述写指令，将所述逻辑地址指向所述之前已写入的与所述待写入数据相同的数据保存的逻辑地址。
为了保证判断的效率，优选的是，所述装置还包括：
样本库创建单元65，用于创建样本库，所述样本库中包含有已写入的数据以及与所述数据对应的逻辑地址；
优选的是，所述样本库为静态样本库，所述静态样本库中包含有已写入且写入次数大于预设值的数据以及与所述数据对应的逻辑地址。
所述判断单元62具体用于，判断所述样本库中是否存在与所述待写入数据相同的数据。
优选的是，所述判断单元62具体用于，判断所述静态样本库中是否存在与所述待写入数据相同的数据。
优选的是，所述装置还包括：
删除单元66，用于在所述判断单元62判断结果为否，且所述闪存当前剩余的存储空间小于预先设定的临界值时，删除所述样本库中没有逻辑地址对应的数据。
本实施例提供的闪存设备中数据存储装置可以使用在前述对应的闪存设备中数据存储方法，详情参见上述闪存设备中数据存储方法实施例二和三的相关描述，在此不再赘述。
实施例七：
图7示出了本发明实施例七提供的闪存设备中数据存储装置的组成结构，为了便于说明，仅示出了与本发明实施例相关的部分。
该闪存设备中数据存储装置可以应用于存储设备中，可以是运行于存储设备内的软件单元、硬件单元或者软硬件相结合的单元，也可以作为独立的挂件集成到存储设备中或者运行于存储设备的应用系统中。
该闪存设备中数据存储装置包括样本库创建单元71、指令接收单元72、获取单元73、判断单元74、写入单元75以及指向单元76。其中，各单元的具体功能如下：
样本库创建单元71，用于创建样本库，所述样本库为动态样本库，所述动态样本库中包含有已写入数据的特征值以及与所述已写入数据对应的逻辑地址；
指令接收单元72，用于接收主机系统发送的写指令，所述写指令包含有待写入的数据以及所述待写入数据写入闪存的逻辑地址；
获取单元73，用于获取所述待写入数据的特征值；
判断单元74，用于判断所述动态样本库中是否存在与所述待写入数据的特征值相同的特征值；
写入单元75，用于在所述判断单元74判断结果为否时，根据所述待写入数据写入闪存的逻辑地址写入所述待写入数据，并将该待写入数据的特征值及该待写入数据对应的逻辑地址存储至所述动态样本库；
指向单元76，用于在所述判断单元74判断结果为是时，不执行所述写指令，将所述逻辑地址指向所述之前已写入的与所述待写入数据相同的数据保存的逻辑地址。
优选的是，所述装置还包括：
删除单元77，用于在所述判断单元74判断结果为否，且所述闪存当前剩余的存储空间小于预先设定的临界值时，删除所述样本库中没有逻辑地址对应的数据。
本实施例提供的闪存设备中数据存储装置可以使用在前述对应的闪存设备中数据存储方法，详情参见上述闪存设备中数据存储方法实施例四的相关描述，在此不再赘述。
实施例八：
图8示出了本发明实施例八提供的闪存设备中数据存储装置的组成结构，为了便于说明，仅示出了与本发明实施例相关的部分。
该闪存设备中数据存储装置可以应用于存储设备中，可以是运行于存储设备内的软件单元、硬件单元或者软硬件相结合的单元，也可以作为独立的挂件集成到存储设备中或者运行于存储设备的应用系统中。
该闪存设备中数据存储装置包括样本库创建单元81、指令接收单元82、获取单元83、判断单元84、写入单元85以及指向单元86。其中，各单元的具体功能如下：
样本库创建单元81，用于创建样本库，所述样本库包含静态样本库和动态样本库，所述静态样本库中包含有已写入且写入次数大于预设值的数据以及与所述数据对应的逻辑地址，所述动态样本库中包含有已写入数据的特征值以及与所述已写入数据对应的逻辑地址；
指令接收单元82，用于接收主机系统发送的写指令，所述写指令包含有待写入的数据以及所述待写入数据写入闪存的逻辑地址；
获取单元83，用于获取所述待写入数据的特征值；
所述判断单元84包括第一判断模块841以及第二判断模块842：
所述第一判断模块841用于判断所述静态样本库中是否存在与所述待写入数据相同的数据；
第二判断模块，用于在所述第一判断模块841判断结果为否时，判断所述动态样本库中是否存在与所述待写入数据的特征值相同的特征值；
写入单元85，用于在所述第二判断模块842判断结果为否时，根据所述待写入数据写入闪存的逻辑地址写入所述待写入数据，并将该待写入数据的特征值及该待写入数据对应的逻辑地址存储至所述动态样本库；
指向单元86，用于在所述第一判断模块841或第二判断模块842判断结果为是时，不执行所述写指令，将所述逻辑地址指向所述之前已写入的与所述待写入数据相同的数据保存的逻辑地址。
优选的是，所述装置还包括：
删除单元87，用于在所述第二判断模块842判断结果为否，且所述闪存当前剩余的存储空间小于预先设定的临界值时，删除所述样本库中没有逻辑地址对应的数据。
本实施例提供的闪存设备中数据存储装置可以使用在前述对应的闪存设备中数据存储方法，详情参见上述闪存设备中数据存储方法实施例五的相关描述，在此不再赘述。
本领域普通技术人员可以理解为上述实施例六、七、八所包括的各个单元和模块只是按照功能逻辑进行划分的，但并不局限于上述的划分，只要能够实现相应的功能即可；另外，各功能单元和模块的具体名称也只是为了便于相互区分，并不用于限制本发明的保护范围。
综上所述，本发明实施例在接收到写指令后，可以通过多种方式判断所述写指令中的待写入数据是否之前已写入过，在判定所述待写入数据之前已写入过时，则不执行所述写指令，只需将所述写指令中的逻辑地址指向之前已写入的与所述待写入数据相同的数据保存的逻辑地址，从而有效减少对闪存的写操作，进而减少对闪存块的擦除操作，避免闪存的频繁磨损，提高闪存的使用性能，延长闪存设备的使用寿命，具有较强的实用性。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (14)

  1. 一种闪存设备中数据存储的方法，其特征在于，所述方法包括：
    接收主机系统发送的写指令，所述写指令包含有待写入的数据以及所述待写入数据写入闪存的逻辑地址；
    判断所述待写入数据是否之前已写入；
    若否，根据所述逻辑地址写入所述待写入数据；
    若是，不执行所述写指令，将所述逻辑地址指向所述之前已写入的与所述待写入数据相同的数据保存的逻辑地址。
  2. 如权利要求1所述的方法，其特征在于，在判断所述待写入数据是否之前已写入的步骤之前，还包括：
    创建样本库，所述样本库中包含有已写入的数据以及与所述数据对应的逻辑地址；
    所述判断所述待写入数据是否之前已写入具体包括：
    判断所述样本库中是否存在与所述待写入数据相同的数据。
  3. 如权利要求2所述的方法，其特征在于，所述样本库为静态样本库，所述静态样本库中包含有写入次数大于预设值的数据以及与所述数据对应的逻辑地址。
  4. 如权利要求2所述的方法，其特征在于，所述样本库为动态样本库，所述动态样本库包含有已写入数据的特征值以及与所述已写入数据对应的逻辑地址；
    所述方法在判断所述待写入数据是否之前已写入的步骤之前，还包括：
    获取所述待写入数据的特征值；
    所述判断所述待写入数据是否之前已写入具体包括：
    判断所述动态样本库中是否存在与所述待写入数据的特征值相同的特征值。
  5. 如权利要求2所述的方法，其特征在于，所述样本库包含静态样本库和动态样本库；
    所述静态样本库中包含有写入次数大于预设值的数据以及与所述数据对应的逻辑地址，所述动态样本库中包含有已写入数据的特征值以及与所述已写入数据对应的逻辑地址；
    所述方法在判断所述待写入数据是否之前已写入的步骤之前，还包括：
    获取所述待写入数据的特征值；
    所述判断所述待写入数据是否之前已写入具体包括：
    判断所述静态样本库中是否存在与所述待写入数据相同的数据；
    若否， 判断所述动态样本库中是否存在与所述待写入数据的特征值相同的特征值。
  6. 如权利要求4或5所述的方法，其特征在于，所述方法还包括：
    在所述动态样本库中不存在与所述待写入数据的特征值相同的特征值时，根据所述待写入数据写入闪存的逻辑地址写入所述待写入数据，并将该待写入数据的特征值及该待写入数据对应的逻辑地址存储至所述动态样本库。
  7. 如权利要求2所述的方法，其特征在于，所述方法还包括：
    当所述待写入数据之前未写入，且所述闪存当前剩余的存储空间小于预先设定的临界值时，删除所述样本库中没有逻辑地址对应的数据。
  8. 一种闪存设备中数据存储的装置，其特征在于，所述装置包括：
    指令接收单元，用于接收主机系统发送的写指令，所述写指令包含有待写入的数据以及所述待写入数据写入闪存的逻辑地址；
    判断单元，用于判断所述待写入数据是否之前已写入；
    写入单元，用于在所述判断单元判断结果为否时，根据所述逻辑地址写入所述待写入数据；
    指向单元，用于在所述判断单元判断结果为是时，不执行所述写指令，将所述逻辑地址指向所述之前已写入的与所述待写入数据相同的数据保存的逻辑地址。
  9. 如权利要求7所述的装置，其特征在于，所述装置还包括：
    样本库创建单元，用于创建样本库，所述样本库中包含有已写入的数据以及与所述数据对应的逻辑地址；
    所述判断单元具体用于，判断所述样本库中是否存在与所述待写入数据相同的数据。
  10. 如权利要求9所述的装置，其特征在于，所述样本库为静态样本库，所述静态样本库中包含有写入次数大于预设值的数据以及与所述数据对应的逻辑地址。
  11. 如权利要求9所述的装置，其特征在于，所述样本库为动态样本库，所述动态样本库中包含有已写入数据的特征值以及与所述已写入数据对应的逻辑地址；
    所述装置还包括：
    获取单元，用于获取所述待写入数据的特征值；
    所述判断单元具体用于，判断所述动态样本库中是否存在与所述待写入数据的特征值相同的特征值。
  12. 如权利要求9所述的装置，其特征在于，所述样本库包含静态样本库和动态样本库；
    所述静态样本库中包含有写入次数大于预设值的数据以及与所述数据对应的逻辑地址，所述动态样本库中包含有已写入数据的特征值以及与所述已写入数据对应的逻辑地址；
    所述装置还包括：
    获取单元，用于获取所述待写入数据的特征值；
    所述判断单元包括：
    第一判断模块，用于判断所述静态样本库中是否存在与所述待写入数据相同的数据；
    第二判断模块，用于在所述第一判断模块判断结果为否时，判断所述动态样本库中是否存在与所述待写入数据的特征值相同的特征值。
  13. 如权利要求11或12所述的装置，其特征在于，所述写入单元具体用于，在所述动态样本库中不存在与所述待写入数据的特征值相同的特征值时，根据所述待写入数据写入闪存的逻辑地址写入所述待写入数据，并将该待写入数据的特征值及该待写入数据对应的逻辑地址存储至所述动态样本库。
  14. 如权利要求9所述的装置，其特征在于，所述装置还包括：
    删除单元，用于在所述判断单元判断结果为否，且所述闪存当前剩余的存储空间小于预先设定的临界值时，删除所述样本库中没有逻辑地址对应的数据。
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