WO2013169980A1 - Surface features mapping - Google Patents

Surface features mapping Download PDF

Info

Publication number
WO2013169980A1
WO2013169980A1 PCT/US2013/040271 US2013040271W WO2013169980A1 WO 2013169980 A1 WO2013169980 A1 WO 2013169980A1 US 2013040271 W US2013040271 W US 2013040271W WO 2013169980 A1 WO2013169980 A1 WO 2013169980A1
Authority
WO
WIPO (PCT)
Prior art keywords
article
features
photon
operable
photons
Prior art date
Application number
PCT/US2013/040271
Other languages
French (fr)
Inventor
Joachim Walter Ahner
Stephen Keith MCLAURIN
Original Assignee
Seagate Technology Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seagate Technology Llc filed Critical Seagate Technology Llc
Priority to KR1020147034291A priority Critical patent/KR102093108B1/en
Priority to EP13787014.3A priority patent/EP2847556A4/en
Priority to CN201380035014.0A priority patent/CN104412079B/en
Priority to MYPI2014703311A priority patent/MY182531A/en
Priority to JP2015511681A priority patent/JP6289450B2/en
Priority to CA2872898A priority patent/CA2872898A1/en
Priority to SG11201407341TA priority patent/SG11201407341TA/en
Publication of WO2013169980A1 publication Critical patent/WO2013169980A1/en
Priority to PH12014502486A priority patent/PH12014502486B1/en
Priority to IL235589A priority patent/IL235589A0/en

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8806Specially adapted optical and illumination features
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8851Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/94Investigating contamination, e.g. dust
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9506Optical discs
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8851Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854Grading and classifying of flaws
    • G01N2021/8861Determining coordinates of flaws
    • G01N2021/8864Mapping zones of defects
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00Features of devices classified in G01N21/00
    • G01N2201/06Illumination; Optics
    • G01N2201/061Sources
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00Features of devices classified in G01N21/00
    • G01N2201/12Circuits of general importance; Signal processing

Definitions

  • An article fabricated on a production line may be inspected for certain features, including defects that might degrade the performance of the article or a system comprising the article.
  • a hard disk for a hard disk drive may be fabricated on a production line and inspected for certain surface features, including surface and subsurface defects that might degrade the performance of the disk or the hard disk drive. Accordingly, apparatuses and methods operable to inspect articles for features such as defects are merited.
  • an apparatus including a photon emitting means for emitting photons onto a surface of an article, a photon detecting means for detecting photons scattered from features in the surface of the article; and a mapping means for mapping the features in the surface of the article, wherein the apparatus is configured to process more than one article every 100 seconds.
  • Fig. 1 provides a schematic illustrating detection of surface features of articles in accordance with an embodiment.
  • Fig. 2 provides a schematic illustrating photon scattering from a surface feature of an article in accordance with an embodiment.
  • FIG. 3 provides a schematic illustrating photons scattering from a surface feature of an article, through an optical component, and onto a photon detector array in accordance with an embodiment.
  • Fig. 4 provides an image of a map of surface features of an article in accordance with an embodiment.
  • Fig. 5 provides a close-up image of the map of surface features provided in Fig. 4.
  • Fig. 6A (top) provides a close-up image of a surface feature from the map provided in Fig. 5, and Fig. 6A (bottom) provides photon scattering intensity distribution of the surface feature.
  • Fig. 6B (top) provides a pixel-interpolated image of the surface feature from Fig. 6A, and Fig. 6B (bottom) provides a pixel-interpolated photon scattering intensity distribution of the surface feature.
  • any labels such as “left,” “right,” “front,” “back,” “top,” “bottom,” “forward,” “reverse,” “clockwise,” “counter clockwise,” “up,” “down,” or other similar terms such as “upper,” “lower,” “aft,” “fore,” “vertical,” “horizontal,” “proximal,” “distal,” and the like are used for convenience and are not intended to imply, for example, any particular fixed location, orientation, or direction. Instead, such labels are used to reflect, for example, relative location, orientation, or directions. It should also be understood that the singular forms of “a,” “an,” and “the” include plural references unless the context clearly dictates otherwise.
  • An article fabricated on a production line may be inspected for certain features, including defects that might degrade the performance of the article or a system comprising the article.
  • a hard disk for a hard disk drive may be fabricated on a production line and inspected for certain surface features, including surface and subsurface defects that might degrade the performance of the disk or the hard disk drive.
  • Provided herein are apparatuses and methods for inspecting articles to detect and/or map certain surface features such as surface and/or subsurface defects. Embodiments of the invention will now be described in greater detail.
  • such articles include any article of manufacture or a workpiece thereof in any stage of manufacture having one or more optically smooth surfaces, examples of which include, but are not limited to, semiconductor wafers, magnetic recording media (e.g., hard disks for hard disk drives), and workpieces thereof in any stage of manufacture.
  • Such articles may be inspected for certain features, including surface and/or subsurface defects that might degrade the performance of the article, which surface and/or subsurface defects include particle and stain contamination, as well as defects including scratches and voids.
  • particle contamination for example, particles trapped on a surface of an intermediate hard disk (i.e., workpiece) for a hard disk drive may damage subsequently sputtered films.
  • Particle contamination may also contaminate a finished surface of a hard disk drive, leading to scratch formation, debris generation, and corruption of the spacing between the hard disk and the read-write head. As such, it is important to inspect articles with apparatus and methods herein to correct manufacturing trends leading to surface and/or subsurface defects and to increase product quality.
  • FIG. 1 provides a schematic for detection and/or mapping of surface features of articles, illustrating an apparatus 100 comprising a photon emitter 1 10, an optical setup 120, a photon detector array 130, and a mapping means 140, as well as an article 150 and a surface features map 160 of a surface of the article 150 in accordance with an embodiment; however, the articles and apparatuses of the invention, as well as methods of the invention, are not limited to the embodiments in Fig. 1 , as additional embodiments of the invention may be realized by the features described in more detail herein.
  • An apparatus for detection and/or mapping of surface features of articles may comprise a single photon emitter (e.g., see photon emitter 1 10 of Fig. 1 ) or a plurality of photon emitters, which may be used to emit photons onto a surface of an article, such as the entire surface of the article or some predetermined portion of the surface of the article (e.g., for gradational rotation of the article for piecewise inspection, if desired).
  • the plurality of photon emitters may comprise at least 2, 3, 4, 5, 6, 7, 8, 9, or 10 photon emitters.
  • the plurality of photon emitters may comprise no more than 10, 9, 8, 7, 6, 5, 4, 3, or 2 photon emitters.
  • the plurality of photon emitters may comprise at least 2 photon emitters and no more than 10 photon emitters (e.g., between 2 and 10 photon emitters), such as at least 2 photon emitters and no more than 5 photon emitters (e.g., between 2 and 5 photon emitters).
  • each photon emitter of the plurality of photon emitters may be the same or different, or some combination thereof (e.g., at least 2 of the same photon emitter, with the remainder of photon emitters being different; at least 3 of the same photon emitter, with the remainder of photon emitters being different; etc.).
  • each photon emitter may emit photons onto a surface of an article at an optimized distance and/or optimized angle for one or more types of features, which types of features are described in more detail herein.
  • the angle optimized for one or more types of features may be equal to the angle of incidence, which is the angle between a ray comprising the emitted photons incident on the surface of the article and the normal (i.e., a line perpendicular to the surface of the article) at the point at which the ray is incident.
  • a photon emitter may be optimized to emit photons at an angle of incidence ranging from 0° to 90°, wherein an angle of incidence of 0° represents the photon emitter emitting photons onto the surface of the article from a side of the article, and wherein an angle of incidence of 90° represents the photon emitter emitting photons onto the surface of the article from directly above the article.
  • a photon emitter may emit photons onto a surface of an article such that the angle of incidence is at least 0°, 5°, 10°, 15°, 20°, 25°, 30°, 35°, 40°, 45°, 50°, 55°, 60°, 65°, 70°, 75°, 80°, 85°, or 90°.
  • a photon emitter may emit photons onto a surface of an article such that the angle of incidence is no more than 90°, 85°, 80°, 75°, 70°, 65°, 60°, 55°, 50°, 45°, 40°, 35°, 30°, 25°, 20°, 15°, 10°, or 5°.
  • a photon emitter may emit photons onto a surface of an article such that the angle of incidence is at least a 0° and no more than 90° (i.e., between 0° and 90°), such as least 0° and no more than 45° (i.e., between 0° and 45°), including at least 45° and no more than 90° (i.e., between 45° and 90°).
  • a photon emitter may emit photons onto a surface of an article, such as the entire surface or some predetermined portion of the surface (e.g., for gradational rotation of the article for piecewise inspection, if desired).
  • the photon emitter optionally in combination with the one or more additional photon emitters, and further optionally in combination with the one or more additional photon emitters of the same type, may further emit photons onto the entire surface of the article or some predetermined portion of the surface such that the entire surface or the predetermined portion of the surface is uniformly or homogenously illuminated.
  • Uniformly illuminating the entire surface of the article or some predetermined portion of the surface includes, but is not limited to, subjecting the entire surface of the article or some predetermined portion of the surface of the article to the same or about the same photon energy per unit time (e.g., photon power or photon flux) and/or photon power per unit area (e.g., photon flux density).
  • uniformly illuminating includes, but is not limited to, subjecting the entire surface of the article or some predetermined portion of the surface of the article to the same or about the same radiant energy per unit time (e.g., radiant power or radiant flux) and/or radiant power per unit area (e.g., irradiance or radiant flux density).
  • a photon emitter or light source may provide light comprising a relatively wide range of wavelengths (e.g., ultraviolet-visible, visible, infrared, etc.), a relatively narrow range of wavelengths (e.g., a subdivision of ultraviolet such as UVA, UVB, UVC, etc.; a subdivision of visible such as red, green, blue, etc.; a subdivision of infrared such as near infrared, mid-infrared; etc.), or a particular wavelength (e.g., monochromatic); light comprising a relatively wide range of frequencies (e.g., ultraviolet-visible, visible, infrared, etc.), a relatively narrow range of frequencies (e.g., a subdivision of ultraviolet such as UVA, UVB, UVC, etc.; a subdivision of visible such as red, green, blue, etc.; a subdivision of infrared such as near infrared, mid-infrared;
  • a relatively wide range of frequencies e.g., ultraviolet-visible, visible,
  • a photon emitter or light source may comprise a lamp such as a flash lamp, including a high-speed flash lamp, configured to minimize vibration while detecting photons scattered from features in a surface of an article with a photon detector array.
  • a photon emitter or light source may comprise a high-speed Xe flash lamp such as a 500 W Xe flash lamp to minimize vibration while detecting photons scattered from features in a surface of an article with a photon detector array.
  • a photon emitter or light source may comprise a collimated light source such as a laser, including a combination of lasers, configured to emit photons onto a surface of an article at one or more angles.
  • a combination of lasers may be provided to a laser beam shaper such that the combination of lasers emits photons onto a surface of an article at one angle.
  • a combination of lasers may be provided to a laser beam shaper such that the combination of lasers emits photons onto a surface of an article at multiple angles.
  • At least 2, 4, 6, 8, 10, 12, 14, 16, 18, 20, 22, 24, 26, 28, or 30 lasers may be provided to a laser beam shaper such that the combination of lasers emits photons onto a surface of an article at one or more angles.
  • no more than 30, 28, 26, 24, 22, 20, 18, 16, 14, 12, 10, 8, 6, 4, or 2 lasers may be provided to a laser beam shaper such that the combination of lasers emits photons onto a surface of an article at one or more angles. Combinations of the foregoing may also be used to describe combinations of lasers provided to a laser beam shaper.
  • At least 2 lasers and no more than 30 lasers e.g., between 2 and 30 lasers
  • at least 10 lasers and no more than 30 lasers e.g., between 10 and 30 lasers
  • at least 20 lasers and no more than 30 lasers e.g., between 20 and 30 lasers
  • at least 24 lasers and no more than 28 lasers e.g., between 24 and 28 lasers
  • a laser beam shaper such that the combination of lasers emits photons onto a surface of an article of an article at one or more angles.
  • a photon emitter or light source may comprise a two-dimensional light source such as a combination of point light sources, including a linear combination, an arcuate combination, etc. of point light sources configured to emit photons onto a surface of an article.
  • a two-dimensional light source may comprise a combination of at least 10, 20, 40, 60, 80, 100, 1 10, 120, 140, 160, 180, or 200 (or more) point light sources.
  • a two-dimensional light source may comprise a combination of no more than 200, 180, 160, 140, 120, 100, 80, 60, 40, 20, or 10 point light sources.
  • a two-dimensional light source may comprise a combination of at least 10 and no more than 200 (e.g., between 10 and 200) point light sources, such as at least 40 and no more than 160 (e.g., between 40 and 160) point light sources, including at least 60 and no more than 140 (e.g., between 60 and 140) point light sources, and further including at least 80 and no more than 120 (e.g., between 80 and 120) point light sources.
  • point light sources may be linearly combined to form a two-dimensional light source such as a strip light.
  • a photon emitter or light source may comprise a two-dimensional light source comprising at least 60 point light sources, such as a ring light comprising at least 60 point light sources, including a ring light comprising at least 60 light-emitting diodes ("LEDs"), and further including a ring light comprising at least 100 LEDs.
  • a two- dimensional light source comprising LEDs may comprise white LEDs, wherein each LED has a power of at least 10 mW.
  • An LED-based ring light may enhance features such as scratches (e.g., circumferential scratches) and/or voids in surfaces of articles, especially when the LED-based ring light is configured to emit photons onto the surfaces of the articles with lower angles (e.g., angle of incidence equal to or less than 45°).
  • An apparatus for detection and/or mapping of surface features of articles may further comprise an optical setup (e.g., see optical setup 120 of Fig. 1 ), which optical setup may manipulate photons emitted from one or more photon emitters and/or photons scattered from surface features of articles.
  • the optical setup may manipulate light emitted from one or more photon emitters and/or light scattered from surface features of articles.
  • the optical setup up may comprise any of a number of optical components placed in the optical path before an article such that the optical components may be used to manipulate photons/light emitted from one or more photon emitters before uniformly or homogenously illuminating the entire surface or the predetermined portion of the surface of the article.
  • the optical setup up may comprise any of a number of optical components placed in the optical path after an article such that the optical components may be used to manipulate photons/light scattered from features in a surface of the article.
  • optical components may include, but are not limited to, optical components such as lenses, mirrors, and filters.
  • optical components such as filters
  • filters may include, for example, wave filters and polarization filters.
  • Wave filters may be used in conjunction with photon emitters described herein to provide light comprising a relatively wide range of wavelengths/frequencies, a relatively narrow range of wavelengths/frequencies, or a particular wavelength/frequency.
  • Polarization filters may be used in conjunction with photon emitters described herein to provide light of a desired polarization including polarized light, partially polarized light, or nonpolarized light.
  • An optical setup for an apparatus for detection and/or mapping of surface features of articles may comprise a single lens or a plurality of lenses, including, but not limited to, a combination of a lens coupled to a photon detector array (e.g., photon detector array 130 of Fig. 1 ) for collecting and detecting photons scattered from features in a surface of an article.
  • the lens coupled to the photon detector array may be an objective lens, such as a telecentric lens, including an object-space telecentric lens (i.e., entrance pupil at infinity), an image-space telecentric lens (i.e., exit pupil at infinity), or a double telecentric lens (i.e., both pupils at infinity).
  • Coupling a telecentric lens to a photon detector array reduces errors with respect to the mapped position of surface features of articles, reduces distortion of surface features of articles, and/or enables quantitative analysis of photons scattered from surface features of articles, which quantitative analysis includes integration of photon scattering intensity distribution for size determination of surface features of articles.
  • an apparatus for detection and/or mapping of surface features of articles may further comprise a single photon detector array (e.g., see photon detector array 130 of Fig. 1 ) comprising a plurality of photon detectors or a plurality of photon detector arrays, each comprising a plurality of photon detectors.
  • the plurality of photon detector arrays may comprise at least 2, 3, 4, 5, 6, 7, 8, 9, or 10 photon detector arrays.
  • the plurality of photon detector arrays may comprise no more than 10, 9, 8, 7, 6, 5, 4, 3, or 2 photon detector arrays. Combinations of the foregoing may also be used to describe the plurality of photon detector arrays.
  • the plurality of photon detector arrays may comprise at least 2 photon detector arrays and no more than 10 photon detector arrays (e.g., between 2 and 10 photon detector arrays), such as at least 2 photon detector arrays and no more than 5 photon detector arrays (e.g., between 2 and 5 photon detector arrays).
  • each photon detector array of the plurality of photon detector arrays may be the same or different, or some combination thereof (e.g., at least 2 of the same photon detector array, with the remainder of photon detector arrays being different; at least 3 of the same photon detector array, with the remainder of photon detector arrays being different; etc.).
  • each photon detector array may be oriented to detect photons scattered from surface features of an article at an optimized distance and/or an optimized angle for a maximum acceptance of scattered light and/or one or more types of features, which types of features are described in more detail herein.
  • a photon detector array and lens e.g., telecentric lens combination may be oriented to collect and detect photons scattered from surface features of an article at an optimized distance and/or an optimized angle for a maximum acceptance of scattered light and/or one or more types of features.
  • Such an optimized angle may be the angle between a ray comprising the center line axis of the photon detector array and/or the lens extended to the surface of the article and the normal (i.e., a line perpendicular to the surface of the article) at the point at which the ray is extended.
  • the optimized angle may be equal to or otherwise include a scatter angle for one or more types of features, and the scatter angle may be a different angle than the angle of reflection, which angle of reflection is equal to the angle of incidence as described herein.
  • a photon detector array or photon detector array and lens combination may be oriented at an optimized angle ranging from 0° to 90°, wherein an optimized angle of 0° represents orientation of the photon detector array or the photon detector array and lens combination at a side of the article, and wherein an optimized angle of 90° represents orientation of the photon detector array or photon detector array and lens combination directly above the article.
  • a photon detector array or photon detector array and lens combination may be oriented at an optimized angle of at least 0°, 5°, 10°, 15°, 20°, 25°, 30°, 35°, 40°, 45°, 50°, 55°, 60°, 65°, 70°, 75°, 80°, 85°, or 90°.
  • a photon detector array or photon detector array and lens combination may be oriented at an optimized angle of no more than 90°, 85°, 80°, 75°, 70°, 65°, 60°, 55°, 50°, 45°, 40°, 35°, 30°, 25°, 20°, 15°, 10°, or 5°.
  • a photon detector array or photon detector array and lens combination may be oriented at an optimized angle of at least a 0° and no more than a 90° (i.e., between 0° and 90°), such as least 0° and no more than 45° (i.e., between 0° and 45°), including at least 45° and no more than 90° (i.e., between 45° and 90°).
  • a photon detector array may detect photons scattered from features in a surface of an article, such as the entire surface of the article or some predetermined portion of the surface of the article.
  • the photon detector array may detect photons scattered from features in a surface of an article, such as the entire surface of the article or some predetermined portion of the surface of the article, while oriented at a distance and/or an angle optimized for a maximum acceptance of scattered light and/or one or more types of features.
  • the angle optimized for one or more types of features may be equal to or otherwise include a scatter angle for one or more types of features.
  • a photon detector array or light detector array may detect light comprising a relatively wide range of wavelengths (e.g., ultraviolet-visible, visible, infrared, etc.), a relatively narrow range of wavelengths (e.g., a subdivision of ultraviolet such as UVA, UVB, UVC, etc.; a subdivision of visible such as red, green, blue, etc.; a subdivision of infrared such as near infrared, mid-infrared; etc.), or a particular wavelength (e.g., monochromatic); light comprising a relatively wide range of frequencies (e.g., ultraviolet-visible, visible, infrared, etc.), a relatively narrow range of frequencies (e.g., a subdivision of ultraviolet such as UVA, UVB, UVC, etc.; a subdivision of visible such as red, green, blue, etc.; a subdivision of infrared such as near infrared, mid-infrared;
  • a relatively wide range of frequencies e.g., ultraviolet-visible, visible
  • a photon detector array may comprise a plurality of pixel sensors, which pixel sensors, in turn, may each comprise a photon detector (e.g., a photodiode) coupled to a circuit comprising a transistor configured for amplification.
  • a photon detector array comprising such pixel sensors include, but are not limited to, low temperature operation (e.g., down to -40 °C), low electron noise (e.g., 2-10 e " RMS; 1 e " RMS; ⁇ 1 e “ RMS; etc.), wide dynamic range (e.g., 30,000:1 , 8,500:1 ; 3,000:1 ; etc.), and/or decreased photon/light collection time.
  • a photon detector array may comprise a large number of pixel sensors (e.g., > 1 ,000,000 or 1 M pixel sensors) arranged in rows and columns of a two-dimensional array, wherein each pixel sensor comprises a photon detector coupled to an amplifier.
  • a photon detector array may comprise at least 1 M, 2M, 3M, 4M, 5M, 6M, 7M, 8M, 9M, 10M, or more, pixel sensors arranged in rows and columns of a two-dimensional array.
  • a photon detector array may comprise no more than 10M, 9M, 8M, 7M, 6M, 5M, 4M, 3M, 2M, 1 M, pixel sensors arranged in rows and columns of a two-dimensional array. Combinations of the foregoing may also be used to describe the number of pixel sensors in a photon detector array.
  • a photon detector array may comprise at least 1 M and no more than 10M (e.g., between 1 M and 10M) pixel sensors arranged in rows and columns of a two-dimensional array, such as at least 1 M and no more than 8M (e.g., between 1 M and 8M) pixel sensors, including at least 1 M and no more than 6M (e.g., between 1 M and 8M) pixel sensors, further including at least 2M and no more than 6M (e.g., between 1 M and 8M) pixel sensors, and even further including at least 2M and no more than 5M (e.g., between 2M and 5M) pixel sensors.
  • 10M e.g., between 1 M and 10M
  • 8M e.g., between 1 M and 8M
  • 6M e.g., between 1 M and 8M
  • 5M e.g., between 2M and 5M
  • a photon detector array may comprise micrometer-sized (i.e., admits of ⁇ units as measured) pixel sensors at least 1 ⁇ , 2 ⁇ , 3 ⁇ , 4 ⁇ , 5 ⁇ , 6 ⁇ , 7 ⁇ , 8 ⁇ , 9 ⁇ , or 10 ⁇ in their smallest dimension.
  • a photon detector array may comprise micrometer-sized pixel sensors no more than 10 ⁇ , 9 ⁇ , 8 ⁇ , 7 ⁇ , 6 ⁇ , 5 ⁇ , 4 ⁇ , 3 ⁇ , 2 ⁇ , or 1 ⁇ in their smallest dimension. Combinations of the foregoing may also be used to describe dimensions of micrometer-sized pixel sensors in photon detector arrays.
  • a photon detector array may comprise micrometer- sized pixel sensors at least 1 ⁇ and no more than 10 ⁇ (e.g., between 1 ⁇ and 10 ⁇ ) in their smallest dimension, such as at least 1 ⁇ and no more than 7 ⁇ (e.g., between 1 ⁇ and 7 ⁇ ), including at least 4 ⁇ and no more than 10 ⁇ (e.g., between 4 ⁇ and 10 ⁇ ), and further including at least 4 ⁇ and no more than 7 ⁇ (e.g., between 4 ⁇ and 7 ⁇ ).
  • Such micrometer-sized pixel sensors may be used in the apparatus to detect and/or map surface features of articles that are more than 100 times smaller than the micrometer-sized pixel sensors.
  • the single photon detector array or the plurality of photon detector arrays may each comprise a complementary metal-oxide semiconductor (“CMOS”) or a scientific complementary metal-oxide semiconductor (“sCMOS”), each of which may optionally be part of CMOS camera or a sCMOS camera, respectively.
  • CMOS complementary metal-oxide semiconductor
  • sCMOS scientific complementary metal-oxide semiconductor
  • FIG. 3 provides a schematic for detection of surface features in an article, illustrating a close-up, cross-sectional view of an apparatus comprising an optical setup and a photon detector array.
  • article 150 comprises a surface 152 and at least surface feature 154.
  • Photons emitted from a single photon emitter or a plurality of photon emitters may be scattered by the surface feature 154 and collected and detected by a combination comprising an optical setup 120 coupled to a photon detector array 130, which combination may be place at an optimized distance and/or an optimized angle for a maximum acceptance of scattered photons and/or one or more types of features.
  • the optical setup 120 may collect and focus the photons scattered from the surface feature 154 onto one or more pixel sensors 132 of photon detector array 130, which one or more pixel sensors each comprises a photon detector coupled to an amplifier.
  • the one or more pixel sensors 132 each of which corresponds to a pixel in a map of an article's surface features, may provide one or more signals to the mapping means for mapping the surface feature 154 as shown, for example, in Fig. 6A, which is a close-up image of the map of surface features provided in Fig. 5, which, in turn, is a close-up image of the map of surface features provided in Fig. 4.
  • An apparatus for detection and/or mapping of surface features of articles may further comprise one or more computers or equivalent devices (e.g., devices that include primary and/or secondary memory and one or more processing elements operable to carry out arithmetic and logical operations) loaded with appropriate instructions operable to, but not limited to, convey each article to the apparatus for inspection; position each article for inspection, optionally including gradational rotation of the article for piecewise inspection; hold each article for inspection; insert optical components into the optical setup; remove optical components from the optical setup; position and/or otherwise adjust optical components for inspection; move each photon emitter into position for inspection, wherein the position for inspection may include an optimized photon emitter-article distance and/or angle (e.g., angle of incidence); switch each photon emitter on and off, or otherwise between modes for emitting photons and not emitting photons; move each photon detector array into position for inspection, wherein the position for inspection
  • the apparatus comprising the one or more computers or equivalent devices may be operable to detect and/or map surface features of articles that are nanometer- sized (i.e., admits of nm units as measured) or smaller in their smallest dimension (e.g., length, width, height, or depth, depending on the surface feature); however, the apparatus is not limited to mapping surface features of articles that are nanometer-sized or smaller, as the apparatus may be operable to map surface features of articles that are micrometer-sized (i.e., admits of ⁇ units as measured) or larger.
  • the apparatus comprising the one or more computers or equivalent devices may be operable to map surface features of articles smaller than 500 nm, 250 nm, 200 nm, 150 nm, 125 nm, 1 10 nm, 100 nm, 90 nm, 80 nm, 70 nm, 60 nm, 50 nm, 40 nm, 30 nm, 20 nm, 10 nm, or 1 nm (10 A) in their smallest dimension, or even smaller, such as surface features of articles smaller than 9 A, 8 A, 7 A, 6 A, 5 A, 4 A, 3 A, 2 A, or 1 A in their smallest dimension.
  • the apparatus comprising the one or more computers or equivalent devices may be operable to, in some embodiments, for example, map surface features of articles between 0.1 nm and 1000 nm, such as between 0.1 nm and 500 nm, including between 0.1 nm and 250 nm, and further including between 0.1 nm and 100 nm, and even further including between 0.1 nm and 80 nm.
  • the apparatus may be operable to detect and/or map surface features of articles such as particle contamination comprising particles that are nanometer-sized (i.e., admits of nm units as measured) or smaller in their smallest dimension (e.g., length, width, or height).
  • the apparatus may be operable to detect and/or map surface and/or subsurface particles smaller than 125 nm, such as smaller than 100 nm, including smaller than 80 nm, and further including smaller than 10 nm in their smallest dimension.
  • the apparatus may be operable to map surface and/or subsurface particles smaller than 4 nm in height.
  • the apparatus may be operable to detect and/or map surface features of articles such as defects comprising scratches (e.g., circumferential scratches) that are micrometer-sized (i.e., admits of ⁇ units as measured) or smaller, such as nanometer-sized (i.e., admits of nm units as measured) or smaller, such as angstrom-sized (i.e., admits of A units as measured) or smaller, in their smallest dimension (e.g., length, width, or depth).
  • scratches e.g., circumferential scratches
  • micrometer-sized i.e., admits of ⁇ units as measured
  • nanometer-sized i.e., admits of nm units as measured
  • angstrom-sized i.e., admits of A units as measured
  • the apparatus may be operable to detect and/or map scratches from, for example, 1 ⁇ to 1000 ⁇ in length, which may be significantly longer than the wavelength of photons/light emitted from a photon emitter of the apparatus.
  • the apparatus may be operable to detect and/or map surface features such as defects comprising scratches smaller than 1000 ⁇ , such as smaller than 500 ⁇ , including smaller than 250 ⁇ , further including smaller than 100 ⁇ , and even further including smaller than 50 ⁇ in scratch length.
  • the apparatus may be operable to detect and/or map scratches from, for example, 1 nm to 500 nm in scratch width.
  • the apparatus may be operable to detect and/or map surface features such as defects comprising scratches smaller than 500 nm, such as smaller than 250 nm, including smaller than 100 nm, further including smaller than 50 nm, and even further including smaller than 15 nm in scratch width.
  • the apparatus may be operable to detect and/or map angstrom-sized scratches with respect to scratch depth.
  • the apparatus may be operable to detect and/or map surface features such as defects comprising scratches smaller than 50 A, such as smaller than 25 A, including smaller than 10 A, further including smaller than 5 A, and even further including smaller than 1 A (e.g., 0.5 A) in scratch depth.
  • the apparatus may be operable to detect and/or map surface features such as defects comprising scratches smaller than 500 ⁇ in length, smaller than 100 nm in width, and smaller than 50 A in depth.
  • the apparatus comprising the one or more computers or equivalent devices may be operable to accurately and/or precisely map the position of a feature on an article's surface. With respect to accuracy, the apparatus comprising the one or more computers or equivalent devices may be operable to map the position of a feature on an article's surface within a micrometer-sized (i.e., admits of ⁇ units as measured) radius or better.
  • the apparatus comprising the one or more computers or equivalent devices may be operable to accurately map the position of a feature on an article's surface within a radius of 100 ⁇ , 90 ⁇ , 80 ⁇ , 70 ⁇ , 60 ⁇ , 50 ⁇ , 40 ⁇ , 30 ⁇ , 20 ⁇ , 10 ⁇ , 9 ⁇ , 8 ⁇ , 7 ⁇ , 6 ⁇ , 5 ⁇ , 4 ⁇ , 3 ⁇ , 2 ⁇ , or 1 ⁇ , or better. Combinations of the foregoing may also be used to describe the accuracy with which the apparatus comprising the one or more computers or equivalent devices may map the position of a feature on an article's surface.
  • the apparatus comprising the one or more computers or equivalent devices may be operable to accurately map the position of a feature on an article's surface within a radius ranging from 1 ⁇ to 100 ⁇ , such as from 1 ⁇ to 50 ⁇ , including from 1 ⁇ to 30 ⁇ , and further including from 5 ⁇ to 10 ⁇ .
  • the apparatus comprising the one or more computers or equivalent devices may be operable to accurately and/or precisely map the position of a feature on an article's surface (e.g., Figs. 6A (top) and 6B (top)) along with the feature's photon scattering intensity distribution (e.g., Figs. 6A (bottom) and 6B (bottom)).
  • the apparatus described herein may characterize surface features both qualitatively and quantitatively.
  • qualitative characterization includes a determination of surface feature type (e.g., particle, stain, scratch, void, etc.).
  • quantitative characterization includes a determination of surface feature position on the article and/or surface feature size.
  • Quantitative characterization of surface features may further include the total number of surface features per article, as well as the number of each type of surface feature. Such characterization information may be cataloged across a plurality of articles and be used to correct manufacturing trends leading to surface and/or subsurface defects.
  • photons e.g., photon energy
  • characterization e.g., qualitative and/or quantitative
  • photon energy may be with respect to unit time for increased photon power or photon flux, or with respect to unit area for increased photon flux density.
  • detection time of a single photon emitter or a plurality of photon emitters may detect more photons for accurately and/or precisely mapping surface features.
  • the apparatus described herein may be configured to process or inspect articles at a rate greater than or commensurate with the rate at which the articles or workpieces thereof are produced.
  • the apparatus may be configured to process or inspect articles at a rate of at least 1 , 2, 3, 4, 5, 6, 7, 8, 9, 10, 12, 14, 16, 18, or 20 article(s) per second, which rate may be commensurate with the rate at which the articles or workpieces thereof are produced.
  • the apparatus may be configured to process or inspect articles at a rate of no more than 20, 18, 16, 14, 12, 10, 9, 8, 7, 6, 5, 4, 3, 2, or 1 article(s) per second, which rate may be commensurate with the rate at which the articles or workpieces thereof are produced.
  • the apparatus may be configured to process or inspect at least 1 and no more than 20 articles per second (e.g., between 1 and 20 articles per second), such as at least 1 and no more than 10 articles per second (e.g., between 1 and 10 articles per second), including at least 1 and no more than 5 articles per second (e.g., between 1 and 5 articles per second).
  • at least 1 and no more than 20 articles per second e.g., between 1 and 20 articles per second
  • at least 1 and no more than 10 articles per second e.g., between 1 and 10 articles per second
  • at least 1 and no more than 5 articles per second e.g., between 1 and 5 articles per second
  • Processing or inspecting articles at rates greater than or commensurate with the rate at which the articles or workpieces thereof are produced is a function of many features of the apparatus described herein, including, but not limited to, photon emitters and/or articles that need not be moved (e.g., for scanning) during processing or inspecting.
  • an article such as a hard disk of a hard disk drive need not be rotated during processing or inspecting.
  • the apparatus may be configured to hold an article stationary while emitting photons onto the surface of the article.
  • the apparatus may be configured to process or inspect articles a rate greater than or commensurate with the rate at which the articles or workpieces thereof are produced, the apparatus may operate at a slower rate if needed.
  • the apparatus may be configured to process or inspect articles at a rate less than one article per second.
  • the apparatus may be configured to process or inspect articles at a rate less than one article per 5, 10, 25, 50, 75, or 100, or more, second(s).
  • the apparatus described herein comprising a photon emitter, an optical setup, a photon detector array, and a mapping means may be fully automated and function in different modes, including, but not limited to, an ultrafast mode, an ultrasensitive mode, and ultrasensitive plus mode.
  • the apparatus may operate at least 200 times faster than an optical surface analyzer (e.g., KLA-Tencor Candela CS10 or CS20), detect surface features such as defects comprising embedded particles down to at least 100 nm, partially detect surface features such as defects comprising scratches (e.g., nanometer-sized scratches), and provide measurements of roughness.
  • an optical surface analyzer e.g., KLA-Tencor Candela CS10 or CS20
  • the apparatus may operate at least 50 times faster than an optical surface analyzer, detect surface features such as defects comprising embedded particles down to at least 30 nm, and provide measurements of roughness.
  • the apparatus may operate at least 20 times faster than an optical surface analyzer, detect surface features such as defects comprising embedded particles down to at least 30 nm, fully detect surface features such as defects comprising scratches (e.g., nano-scratches), and provide measurements of roughness.
  • an apparatus comprising a photon emitter configured to emit photons onto a surface of an article, a photon detector array comprising a plurality of photon detectors configured to receive photons scattered from features in the surface of the article; and a mapping means for mapping the features in the surface of the article, wherein the apparatus is configured to characterize the features in the surface of the article by analyzing the photons received at the plurality of photon detectors.
  • the apparatus is configured to hold the article in a stationary position while emitting photons onto the surface of the article.
  • the apparatus further comprises a telecentric lens, wherein the telecentric lens is coupled to the photon detector array.
  • the apparatus is operable to process articles at a rate faster than one article every 100 seconds. In some embodiments, the apparatus is operable to map features smaller than 80 nm in their smallest dimension. In some embodiments, the apparatus is operable to map features greater than 0.10 nm in their smallest dimension. In some embodiments, the mapping means is operable to map features with at least a 10- ⁇ accuracy with respect to location.
  • an apparatus comprising a photon emitter configured to emit photons onto a surface of an article, a photon detector array comprising a plurality of photon detectors configured to receive photons scattered from features in the surface of the article; and a mapping means for mapping the features in the surface of the article, wherein the apparatus is operable to process articles at a rate faster than one article every 100 seconds.
  • the apparatus is configured to hold the article in a stationary position while emitting photons onto the surface of the article.
  • the apparatus further comprises a telecentric lens, wherein the telecentric lens is coupled to the photon detector array.
  • the apparatus is operable to process articles at a rate faster than one article per second.
  • the apparatus is operable to map features smaller than 80 nm in their smallest dimension. In some embodiments, the apparatus is operable to map features greater than 0.10 nm in their smallest dimension. In some embodiments, the mapping means is operable to map features down to at least a 10- ⁇ precision with respect to location.
  • an apparatus comprising a photon emitter configured to emit photons onto a surface of an article; a telecentric lens; a photon detector array comprising a plurality of photon detectors coupled to the lens configured to receive photons scattered from one or more features in the surface of the article; and a mapping means for mapping the one or more features in the surface of the article, wherein the apparatus is operable to map features smaller than 80 nm in their smallest dimension.
  • the apparatus is configured to hold the article in a stationary position while emitting photons onto the surface of the article.
  • the apparatus is operable to process articles at a rate faster than one article every 100 seconds.
  • the apparatus is operable to process articles at a rate faster than one article per second. In some embodiments, the apparatus is operable to map features smaller than 25 nm in their smallest dimension. In some embodiments, the apparatus is operable to map features greater than 0.10 nm in their smallest dimension. In some embodiments, the mapping means is operable to map features with at least a 10- ⁇ accuracy with respect to location.
  • an apparatus comprising a photon emitter configured to emit photons onto a surface of an article; a telecentric lens; a photon detector array coupled to the lens configured to receive photons scattered from one or more features in the surface of the article; and a mapping means for mapping the one or more features in the surface of the article, wherein the apparatus is operable to map features smaller than 80 nm in their smallest dimension.
  • the apparatus is configured to hold the article in a stationary position while emitting photons onto the surface of the article.
  • the apparatus is operable to process articles at a rate faster than one article every 100 seconds.
  • the apparatus is operable to process articles at a rate faster than one article per second.
  • the apparatus is operable to map features smaller than 25 nm in their smallest dimension. In some embodiments, the apparatus is operable to map features greater than 0.10 nm in their smallest dimension. In some embodiments, the mapping means is operable to map features down to at least a 10- ⁇ precision with respect to location.
  • an apparatus comprising a photon emitting means for emitting photons onto a surface of an article, a photon detecting means for detecting photons scattered from features in the surface of the article; and a mapping means for mapping the features in the surface of the article, wherein the apparatus is operable to process articles at a rate faster than one article every 100 seconds.
  • the apparatus is configured to hold the article in a stationary position while emitting photons onto the surface of the article.
  • the article is greater than 500 square micrometers.
  • the apparatus is operable to process articles at a rate faster than five article per second.
  • the apparatus is operable to map features smaller than 80 nm in their smallest dimension.
  • the mapping means is further for analyzing scattering intensity distribution of photons scattered from features in the surface of the article.
  • an apparatus comprising a photon emitting means for emitting photons onto a surface of an article, a photon detecting means for detecting photons scattered from features in the surface of the article; and a mapping means for mapping the features in the surface of the article, wherein the mapping means is operable to map features down to at least a 10- ⁇ precision with respect to location.
  • the apparatus is configured to hold the article in a stationary position while emitting photons onto the surface of the article.
  • the apparatus is operable to process articles at a rate faster than one article every 100 seconds.
  • the apparatus is operable to process articles at a rate faster than one article per second.
  • the apparatus is operable to map features smaller than 80 nm in their smallest dimension.
  • the mapping means is further configured to map scattering intensity distribution of photons scattered from features in the surface of the article.
  • a device comprising a feature mapper configured to map features about a surface of an article from signals provided by a photon detector array, wherein the signals correspond to photons scattered from the features about the surface of the article, and wherein the feature mapper is configured for characterizing the features about the surface of the article by analyzing the photons received at the photon detector array.
  • the feature mapper is configured for qualitatively and/or quantitatively characterizing the features about the surface of the article.
  • quantitatively characterizing the features about the surface of the article comprises determining the size and/or number of features about the surface of the article.
  • the device is operable to map features smaller than 80 nm in their smallest dimension.
  • the device is operable to process articles at a rate faster than one article every 100 seconds.

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Signal Processing (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Waste-Gas Treatment And Other Accessory Devices For Furnaces (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Geophysics And Detection Of Objects (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Abstract

Provided herein is an apparatus, including a photon emitting means for emitting photons onto a surface of an article, a photon detecting means for detecting photons scattered from features in the surface of the article; and a mapping means for mapping the features in the surface of the article, wherein the apparatus is configured to process more than one article every 100 seconds.

Description

SURFACE FEATURES MAPPING
CROSS REFERENCE
[0001 ] This application claims the benefit of U.S. Provisional Patent Application No. 61/644,998, filed May 9, 2012.
BACKGROUND
[0002] An article fabricated on a production line may be inspected for certain features, including defects that might degrade the performance of the article or a system comprising the article. For example, a hard disk for a hard disk drive may be fabricated on a production line and inspected for certain surface features, including surface and subsurface defects that might degrade the performance of the disk or the hard disk drive. Accordingly, apparatuses and methods operable to inspect articles for features such as defects are merited.
SUMMARY
[0003] Provided herein is an apparatus, including a photon emitting means for emitting photons onto a surface of an article, a photon detecting means for detecting photons scattered from features in the surface of the article; and a mapping means for mapping the features in the surface of the article, wherein the apparatus is configured to process more than one article every 100 seconds.
[0004] These and other features and aspects of the invention may be better understood with reference to the following drawings, description, and appended claims.
DRAWINGS
[0005] Fig. 1 provides a schematic illustrating detection of surface features of articles in accordance with an embodiment. [0006] Fig. 2 provides a schematic illustrating photon scattering from a surface feature of an article in accordance with an embodiment.
[0007] Fig. 3 provides a schematic illustrating photons scattering from a surface feature of an article, through an optical component, and onto a photon detector array in accordance with an embodiment.
[0008] Fig. 4 provides an image of a map of surface features of an article in accordance with an embodiment.
[0009] Fig. 5 provides a close-up image of the map of surface features provided in Fig. 4.
[0010] Fig. 6A (top) provides a close-up image of a surface feature from the map provided in Fig. 5, and Fig. 6A (bottom) provides photon scattering intensity distribution of the surface feature.
[001 1 ] Fig. 6B (top) provides a pixel-interpolated image of the surface feature from Fig. 6A, and Fig. 6B (bottom) provides a pixel-interpolated photon scattering intensity distribution of the surface feature.
DESCRIPTION
[0012] Before embodiments of the invention are described in greater detail, it should be understood by persons having ordinary skill in the art to which the invention pertains that the invention is not limited to the particular embodiments described and/or illustrated herein, as elements in such embodiments may vary. It should likewise be understood that a particular embodiment described and/or illustrated herein has elements which may be readily separated from the particular embodiment and optionally combined with any of several other embodiments or substituted for elements in any of several other embodiments described herein.
[0013] It should also be understood by persons having ordinary skill in the art to which the invention pertains that the terminology used herein is for the purpose of describing particular embodiments of the invention, and the terminology is not intended to be limiting. Unless indicated otherwise, ordinal numbers (e.g., first, second, third, etc.) are used to distinguish or identify different elements or steps in a group of elements or steps, and do not supply a serial or numerical limitation on the elements or steps of the claimed invention or particular embodiments of the invention. For example, "first," "second," and "third" elements or steps need not necessarily appear in that order, and the claimed invention, or particular embodiments of the invention, need not necessarily be limited to three elements or steps. It should also be understood that, unless indicated otherwise, any labels such as "left," "right," "front," "back," "top," "bottom," "forward," "reverse," "clockwise," "counter clockwise," "up," "down," or other similar terms such as "upper," "lower," "aft," "fore," "vertical," "horizontal," "proximal," "distal," and the like are used for convenience and are not intended to imply, for example, any particular fixed location, orientation, or direction. Instead, such labels are used to reflect, for example, relative location, orientation, or directions. It should also be understood that the singular forms of "a," "an," and "the" include plural references unless the context clearly dictates otherwise.
[0014] Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by persons of ordinary skill in the art to which the invention pertains.
[0015] An article fabricated on a production line may be inspected for certain features, including defects that might degrade the performance of the article or a system comprising the article. For example, a hard disk for a hard disk drive may be fabricated on a production line and inspected for certain surface features, including surface and subsurface defects that might degrade the performance of the disk or the hard disk drive. Provided herein are apparatuses and methods for inspecting articles to detect and/or map certain surface features such as surface and/or subsurface defects. Embodiments of the invention will now be described in greater detail.
[0016] With respect to articles that may be inspected with apparatuses and methods herein, such articles include any article of manufacture or a workpiece thereof in any stage of manufacture having one or more optically smooth surfaces, examples of which include, but are not limited to, semiconductor wafers, magnetic recording media (e.g., hard disks for hard disk drives), and workpieces thereof in any stage of manufacture. Such articles may be inspected for certain features, including surface and/or subsurface defects that might degrade the performance of the article, which surface and/or subsurface defects include particle and stain contamination, as well as defects including scratches and voids. With respect to particle contamination, for example, particles trapped on a surface of an intermediate hard disk (i.e., workpiece) for a hard disk drive may damage subsequently sputtered films. Particle contamination may also contaminate a finished surface of a hard disk drive, leading to scratch formation, debris generation, and corruption of the spacing between the hard disk and the read-write head. As such, it is important to inspect articles with apparatus and methods herein to correct manufacturing trends leading to surface and/or subsurface defects and to increase product quality.
[0017] Fig. 1 provides a schematic for detection and/or mapping of surface features of articles, illustrating an apparatus 100 comprising a photon emitter 1 10, an optical setup 120, a photon detector array 130, and a mapping means 140, as well as an article 150 and a surface features map 160 of a surface of the article 150 in accordance with an embodiment; however, the articles and apparatuses of the invention, as well as methods of the invention, are not limited to the embodiments in Fig. 1 , as additional embodiments of the invention may be realized by the features described in more detail herein.
[0018] An apparatus for detection and/or mapping of surface features of articles may comprise a single photon emitter (e.g., see photon emitter 1 10 of Fig. 1 ) or a plurality of photon emitters, which may be used to emit photons onto a surface of an article, such as the entire surface of the article or some predetermined portion of the surface of the article (e.g., for gradational rotation of the article for piecewise inspection, if desired). In some embodiments, for example, the plurality of photon emitters may comprise at least 2, 3, 4, 5, 6, 7, 8, 9, or 10 photon emitters. In some embodiments, for example, the plurality of photon emitters may comprise no more than 10, 9, 8, 7, 6, 5, 4, 3, or 2 photon emitters. Combinations of the foregoing may also be used to describe the plurality of photon emitters. In some embodiments, for example, the plurality of photon emitters may comprise at least 2 photon emitters and no more than 10 photon emitters (e.g., between 2 and 10 photon emitters), such as at least 2 photon emitters and no more than 5 photon emitters (e.g., between 2 and 5 photon emitters). Further with respect to the plurality of photon emitters, each photon emitter of the plurality of photon emitters may be the same or different, or some combination thereof (e.g., at least 2 of the same photon emitter, with the remainder of photon emitters being different; at least 3 of the same photon emitter, with the remainder of photon emitters being different; etc.).
[0019] Whether the apparatus for detection and/or mapping of surface features of articles comprises a single photon emitter or a plurality of photon emitters, each photon emitter may emit photons onto a surface of an article at an optimized distance and/or optimized angle for one or more types of features, which types of features are described in more detail herein. The angle optimized for one or more types of features may be equal to the angle of incidence, which is the angle between a ray comprising the emitted photons incident on the surface of the article and the normal (i.e., a line perpendicular to the surface of the article) at the point at which the ray is incident. Fig. 2 provides a number of rays comprising emitted photons incident on a surface 152 of an article 150 that form an angle of incidence with the normal to the surface. A photon emitter may be optimized to emit photons at an angle of incidence ranging from 0° to 90°, wherein an angle of incidence of 0° represents the photon emitter emitting photons onto the surface of the article from a side of the article, and wherein an angle of incidence of 90° represents the photon emitter emitting photons onto the surface of the article from directly above the article. In some embodiments, for example, a photon emitter may emit photons onto a surface of an article such that the angle of incidence is at least 0°, 5°, 10°, 15°, 20°, 25°, 30°, 35°, 40°, 45°, 50°, 55°, 60°, 65°, 70°, 75°, 80°, 85°, or 90°. In some embodiments, for example, a photon emitter may emit photons onto a surface of an article such that the angle of incidence is no more than 90°, 85°, 80°, 75°, 70°, 65°, 60°, 55°, 50°, 45°, 40°, 35°, 30°, 25°, 20°, 15°, 10°, or 5°. Combinations of the foregoing may also be used to describe the angle of incidence at which a photon emitter may emit photons onto a surface of an article. In some embodiments, for example, a photon emitter may emit photons onto a surface of an article such that the angle of incidence is at least a 0° and no more than 90° (i.e., between 0° and 90°), such as least 0° and no more than 45° (i.e., between 0° and 45°), including at least 45° and no more than 90° (i.e., between 45° and 90°). [0020] A photon emitter, optionally in combination with one or more additional photon emitters, and further optionally in combination with one or more additional photon emitters of the same type, may emit photons onto a surface of an article, such as the entire surface or some predetermined portion of the surface (e.g., for gradational rotation of the article for piecewise inspection, if desired). The photon emitter, optionally in combination with the one or more additional photon emitters, and further optionally in combination with the one or more additional photon emitters of the same type, may further emit photons onto the entire surface of the article or some predetermined portion of the surface such that the entire surface or the predetermined portion of the surface is uniformly or homogenously illuminated. Uniformly illuminating the entire surface of the article or some predetermined portion of the surface includes, but is not limited to, subjecting the entire surface of the article or some predetermined portion of the surface of the article to the same or about the same photon energy per unit time (e.g., photon power or photon flux) and/or photon power per unit area (e.g., photon flux density). In radiometric terms, uniformly illuminating includes, but is not limited to, subjecting the entire surface of the article or some predetermined portion of the surface of the article to the same or about the same radiant energy per unit time (e.g., radiant power or radiant flux) and/or radiant power per unit area (e.g., irradiance or radiant flux density).
[0021 ] With the appreciation that photons are the elementary particles of electromagnetic radiation or light, a photon emitter or light source may provide light comprising a relatively wide range of wavelengths (e.g., ultraviolet-visible, visible, infrared, etc.), a relatively narrow range of wavelengths (e.g., a subdivision of ultraviolet such as UVA, UVB, UVC, etc.; a subdivision of visible such as red, green, blue, etc.; a subdivision of infrared such as near infrared, mid-infrared; etc.), or a particular wavelength (e.g., monochromatic); light comprising a relatively wide range of frequencies (e.g., ultraviolet-visible, visible, infrared, etc.), a relatively narrow range of frequencies (e.g., a subdivision of ultraviolet such as UVA, UVB, UVC, etc.; a subdivision of visible such as red, green, blue, etc.; a subdivision of infrared such as near infrared, mid-infrared; etc.), or a particular frequency (e.g., monochromatic); polarized (e.g., linear polarization, circular polarization, etc.) light, partially polarized light, or nonpolarized light; and/or light with different degrees of temporal and/or spatial coherence ranging from coherent light (e.g., laser) to noncoherent light. As discussed herein, a photon emitter or light source may be used in conjunction with one or more optical components of an optical setup to provide light having any of the foregoing qualities.
[0022] In view of the foregoing, a photon emitter or light source may comprise a lamp such as a flash lamp, including a high-speed flash lamp, configured to minimize vibration while detecting photons scattered from features in a surface of an article with a photon detector array. In some embodiments, for example, a photon emitter or light source may comprise a high-speed Xe flash lamp such as a 500 W Xe flash lamp to minimize vibration while detecting photons scattered from features in a surface of an article with a photon detector array.
[0023] Also in view of the foregoing, a photon emitter or light source may comprise a collimated light source such as a laser, including a combination of lasers, configured to emit photons onto a surface of an article at one or more angles. In some embodiments, for example, a combination of lasers may be provided to a laser beam shaper such that the combination of lasers emits photons onto a surface of an article at one angle. In some embodiments, for example, a combination of lasers may be provided to a laser beam shaper such that the combination of lasers emits photons onto a surface of an article at multiple angles. In some embodiments, for example, at least 2, 4, 6, 8, 10, 12, 14, 16, 18, 20, 22, 24, 26, 28, or 30 lasers (or more) may be provided to a laser beam shaper such that the combination of lasers emits photons onto a surface of an article at one or more angles. In some embodiments, for example, no more than 30, 28, 26, 24, 22, 20, 18, 16, 14, 12, 10, 8, 6, 4, or 2 lasers may be provided to a laser beam shaper such that the combination of lasers emits photons onto a surface of an article at one or more angles. Combinations of the foregoing may also be used to describe combinations of lasers provided to a laser beam shaper. In some embodiments, for example, at least 2 lasers and no more than 30 lasers (e.g., between 2 and 30 lasers), such as at least 10 lasers and no more than 30 lasers (e.g., between 10 and 30 lasers), including at least 20 lasers and no more than 30 lasers (e.g., between 20 and 30 lasers), and further including at least 24 lasers and no more than 28 lasers (e.g., between 24 and 28 lasers) may be provided to a laser beam shaper such that the combination of lasers emits photons onto a surface of an article of an article at one or more angles.
[0024] Further in view of the foregoing, a photon emitter or light source may comprise a two-dimensional light source such as a combination of point light sources, including a linear combination, an arcuate combination, etc. of point light sources configured to emit photons onto a surface of an article. In some embodiments, for example, a two-dimensional light source may comprise a combination of at least 10, 20, 40, 60, 80, 100, 1 10, 120, 140, 160, 180, or 200 (or more) point light sources. In some embodiments, for example, a two-dimensional light source may comprise a combination of no more than 200, 180, 160, 140, 120, 100, 80, 60, 40, 20, or 10 point light sources. Combinations of the foregoing may also be used to describe two-dimensional light sources comprising combinations of point light sources. In some embodiments, for example, a two-dimensional light source may comprise a combination of at least 10 and no more than 200 (e.g., between 10 and 200) point light sources, such as at least 40 and no more than 160 (e.g., between 40 and 160) point light sources, including at least 60 and no more than 140 (e.g., between 60 and 140) point light sources, and further including at least 80 and no more than 120 (e.g., between 80 and 120) point light sources. Such point light sources may be linearly combined to form a two-dimensional light source such as a strip light. Such point light sources may be arcuately combined to form a two-dimensional light source such as a ring light. In some embodiments, for example, a photon emitter or light source may comprise a two-dimensional light source comprising at least 60 point light sources, such as a ring light comprising at least 60 point light sources, including a ring light comprising at least 60 light-emitting diodes ("LEDs"), and further including a ring light comprising at least 100 LEDs. A two- dimensional light source comprising LEDs may comprise white LEDs, wherein each LED has a power of at least 10 mW. An LED-based ring light may enhance features such as scratches (e.g., circumferential scratches) and/or voids in surfaces of articles, especially when the LED-based ring light is configured to emit photons onto the surfaces of the articles with lower angles (e.g., angle of incidence equal to or less than 45°). [0025] An apparatus for detection and/or mapping of surface features of articles may further comprise an optical setup (e.g., see optical setup 120 of Fig. 1 ), which optical setup may manipulate photons emitted from one or more photon emitters and/or photons scattered from surface features of articles. With the appreciation that photons are the elementary particles of electromagnetic radiation or light, the optical setup may manipulate light emitted from one or more photon emitters and/or light scattered from surface features of articles. The optical setup up may comprise any of a number of optical components placed in the optical path before an article such that the optical components may be used to manipulate photons/light emitted from one or more photon emitters before uniformly or homogenously illuminating the entire surface or the predetermined portion of the surface of the article. The optical setup up may comprise any of a number of optical components placed in the optical path after an article such that the optical components may be used to manipulate photons/light scattered from features in a surface of the article. The forgoing optical components may include, but are not limited to, optical components such as lenses, mirrors, and filters. With respect to optical components such as filters, such filters may include, for example, wave filters and polarization filters. Wave filters may be used in conjunction with photon emitters described herein to provide light comprising a relatively wide range of wavelengths/frequencies, a relatively narrow range of wavelengths/frequencies, or a particular wavelength/frequency. Polarization filters may be used in conjunction with photon emitters described herein to provide light of a desired polarization including polarized light, partially polarized light, or nonpolarized light.
[0026] An optical setup for an apparatus for detection and/or mapping of surface features of articles may comprise a single lens or a plurality of lenses, including, but not limited to, a combination of a lens coupled to a photon detector array (e.g., photon detector array 130 of Fig. 1 ) for collecting and detecting photons scattered from features in a surface of an article. The lens coupled to the photon detector array may be an objective lens, such as a telecentric lens, including an object-space telecentric lens (i.e., entrance pupil at infinity), an image-space telecentric lens (i.e., exit pupil at infinity), or a double telecentric lens (i.e., both pupils at infinity). Coupling a telecentric lens to a photon detector array reduces errors with respect to the mapped position of surface features of articles, reduces distortion of surface features of articles, and/or enables quantitative analysis of photons scattered from surface features of articles, which quantitative analysis includes integration of photon scattering intensity distribution for size determination of surface features of articles.
[0027] To detect photons scattered from surface features of articles, an apparatus for detection and/or mapping of surface features of articles may further comprise a single photon detector array (e.g., see photon detector array 130 of Fig. 1 ) comprising a plurality of photon detectors or a plurality of photon detector arrays, each comprising a plurality of photon detectors. In some embodiments, for example, the plurality of photon detector arrays may comprise at least 2, 3, 4, 5, 6, 7, 8, 9, or 10 photon detector arrays. In some embodiments, for example, the plurality of photon detector arrays may comprise no more than 10, 9, 8, 7, 6, 5, 4, 3, or 2 photon detector arrays. Combinations of the foregoing may also be used to describe the plurality of photon detector arrays. In some embodiments, for example, the plurality of photon detector arrays may comprise at least 2 photon detector arrays and no more than 10 photon detector arrays (e.g., between 2 and 10 photon detector arrays), such as at least 2 photon detector arrays and no more than 5 photon detector arrays (e.g., between 2 and 5 photon detector arrays). Further with respect to the plurality of photon detector arrays, each photon detector array of the plurality of photon detector arrays may be the same or different, or some combination thereof (e.g., at least 2 of the same photon detector array, with the remainder of photon detector arrays being different; at least 3 of the same photon detector array, with the remainder of photon detector arrays being different; etc.).
[0028] Whether the apparatus comprises a single photon detector array or a plurality of photon detector arrays, each photon detector array may be oriented to detect photons scattered from surface features of an article at an optimized distance and/or an optimized angle for a maximum acceptance of scattered light and/or one or more types of features, which types of features are described in more detail herein. Likewise, a photon detector array and lens (e.g., telecentric lens) combination may be oriented to collect and detect photons scattered from surface features of an article at an optimized distance and/or an optimized angle for a maximum acceptance of scattered light and/or one or more types of features. Such an optimized angle may be the angle between a ray comprising the center line axis of the photon detector array and/or the lens extended to the surface of the article and the normal (i.e., a line perpendicular to the surface of the article) at the point at which the ray is extended. The optimized angle may be equal to or otherwise include a scatter angle for one or more types of features, and the scatter angle may be a different angle than the angle of reflection, which angle of reflection is equal to the angle of incidence as described herein. Fig. 2 provides a number of rays comprising scattered photons from a feature 154 on a surface 152 of an article 150 that form various scatter angles, as well as a number of rays comprising reflected photons that form an angle of reflection with the normal to the surface. A photon detector array or photon detector array and lens combination may be oriented at an optimized angle ranging from 0° to 90°, wherein an optimized angle of 0° represents orientation of the photon detector array or the photon detector array and lens combination at a side of the article, and wherein an optimized angle of 90° represents orientation of the photon detector array or photon detector array and lens combination directly above the article. In some embodiments, for example, a photon detector array or photon detector array and lens combination may be oriented at an optimized angle of at least 0°, 5°, 10°, 15°, 20°, 25°, 30°, 35°, 40°, 45°, 50°, 55°, 60°, 65°, 70°, 75°, 80°, 85°, or 90°. In some embodiments, for example, a photon detector array or photon detector array and lens combination may be oriented at an optimized angle of no more than 90°, 85°, 80°, 75°, 70°, 65°, 60°, 55°, 50°, 45°, 40°, 35°, 30°, 25°, 20°, 15°, 10°, or 5°. Combinations of the foregoing may also be used to describe the optimized angle at which the photon detector array or photon detector array and lens combination may be oriented. In some embodiments, for example, a photon detector array or photon detector array and lens combination may be oriented at an optimized angle of at least a 0° and no more than a 90° (i.e., between 0° and 90°), such as least 0° and no more than 45° (i.e., between 0° and 45°), including at least 45° and no more than 90° (i.e., between 45° and 90°).
[0029] A photon detector array, optionally in combination with a lens (e.g., telecentric lens), and further optionally in combination with one or more additional photon detector arrays or photon-detector-array-and-lens combinations, and even further optionally in combination with one or more additional photon detector arrays or photon-detector- array-and-lens combinations of the same type, may detect photons scattered from features in a surface of an article, such as the entire surface of the article or some predetermined portion of the surface of the article. The photon detector array, optionally in combination with a lens (e.g., telecentric lens), and further optionally in combination with one or more additional photon detector arrays or photon-detector-array-and-lens combinations, and even further optionally in combination with one or more additional photon detector arrays or photon-detector-array-and-lens combinations of the same type, may detect photons scattered from features in a surface of an article, such as the entire surface of the article or some predetermined portion of the surface of the article, while oriented at a distance and/or an angle optimized for a maximum acceptance of scattered light and/or one or more types of features. As provided herein, the angle optimized for one or more types of features may be equal to or otherwise include a scatter angle for one or more types of features.
[0030] With the appreciation that photons are the elementary particles of electromagnetic radiation or light, a photon detector array or light detector array may detect light comprising a relatively wide range of wavelengths (e.g., ultraviolet-visible, visible, infrared, etc.), a relatively narrow range of wavelengths (e.g., a subdivision of ultraviolet such as UVA, UVB, UVC, etc.; a subdivision of visible such as red, green, blue, etc.; a subdivision of infrared such as near infrared, mid-infrared; etc.), or a particular wavelength (e.g., monochromatic); light comprising a relatively wide range of frequencies (e.g., ultraviolet-visible, visible, infrared, etc.), a relatively narrow range of frequencies (e.g., a subdivision of ultraviolet such as UVA, UVB, UVC, etc.; a subdivision of visible such as red, green, blue, etc.; a subdivision of infrared such as near infrared, mid-infrared; etc.), or a particular frequency (e.g., monochromatic); polarized (e.g., linear polarization, circular polarization, etc.) light, partially polarized light, or nonpolarized light; and/or light with different degrees of temporal and/or spatial coherence ranging from coherent light (e.g., laser) to noncoherent light. As discussed herein, a photon detector array or light detector array may be used in conjunction with one or more optical components of an optical setup to detect light having any of the foregoing qualities.
[0031 ] A photon detector array may comprise a plurality of pixel sensors, which pixel sensors, in turn, may each comprise a photon detector (e.g., a photodiode) coupled to a circuit comprising a transistor configured for amplification. Features of a photon detector array comprising such pixel sensors include, but are not limited to, low temperature operation (e.g., down to -40 °C), low electron noise (e.g., 2-10 e" RMS; 1 e" RMS; < 1 e" RMS; etc.), wide dynamic range (e.g., 30,000:1 , 8,500:1 ; 3,000:1 ; etc.), and/or decreased photon/light collection time. A photon detector array may comprise a large number of pixel sensors (e.g., > 1 ,000,000 or 1 M pixel sensors) arranged in rows and columns of a two-dimensional array, wherein each pixel sensor comprises a photon detector coupled to an amplifier. In some embodiments, for example, a photon detector array may comprise at least 1 M, 2M, 3M, 4M, 5M, 6M, 7M, 8M, 9M, 10M, or more, pixel sensors arranged in rows and columns of a two-dimensional array. In some embodiments, for example, a photon detector array may comprise no more than 10M, 9M, 8M, 7M, 6M, 5M, 4M, 3M, 2M, 1 M, pixel sensors arranged in rows and columns of a two-dimensional array. Combinations of the foregoing may also be used to describe the number of pixel sensors in a photon detector array. In some embodiments, for example, a photon detector array may comprise at least 1 M and no more than 10M (e.g., between 1 M and 10M) pixel sensors arranged in rows and columns of a two-dimensional array, such as at least 1 M and no more than 8M (e.g., between 1 M and 8M) pixel sensors, including at least 1 M and no more than 6M (e.g., between 1 M and 8M) pixel sensors, further including at least 2M and no more than 6M (e.g., between 1 M and 8M) pixel sensors, and even further including at least 2M and no more than 5M (e.g., between 2M and 5M) pixel sensors.
[0032] Due to surface reflections of surface features in articles and/or small angle scattering (e.g., 4π scattering), surface features may appear much larger in size enabling pixel sensors larger the than surface features to be used. In some embodiments, for example, a photon detector array may comprise micrometer-sized (i.e., admits of μιτι units as measured) pixel sensors at least 1 μιτι, 2 μιτι, 3 μιτι, 4 μιτι, 5 μιτι, 6 μιτι, 7 μιτι, 8 μιτι, 9 μιτι, or 10 μιτι in their smallest dimension. In some embodiments, for example, a photon detector array may comprise micrometer-sized pixel sensors no more than 10 μιτι, 9 μιτι, 8 μιτι, 7 μιτι, 6 μιτι, 5 μιτι, 4 μιτι, 3 μιτι, 2 μιτι, or 1 μιτι in their smallest dimension. Combinations of the foregoing may also be used to describe dimensions of micrometer-sized pixel sensors in photon detector arrays. In some embodiments, for example, a photon detector array may comprise micrometer- sized pixel sensors at least 1 μιτι and no more than 10 μιτι (e.g., between 1 μιτι and 10 μιτι) in their smallest dimension, such as at least 1 μιτι and no more than 7 μιτι (e.g., between 1 μιτι and 7 μιτι), including at least 4 μιτι and no more than 10 μιτι (e.g., between 4 μιτι and 10 μιτι), and further including at least 4 μιτι and no more than 7 μιτι (e.g., between 4 μιτι and 7 μιτι). Such micrometer-sized pixel sensors may be used in the apparatus to detect and/or map surface features of articles that are more than 100 times smaller than the micrometer-sized pixel sensors.
[0033] In view of the foregoing, the single photon detector array or the plurality of photon detector arrays may each comprise a complementary metal-oxide semiconductor ("CMOS") or a scientific complementary metal-oxide semiconductor ("sCMOS"), each of which may optionally be part of CMOS camera or a sCMOS camera, respectively.
[0034] Fig. 3 provides a schematic for detection of surface features in an article, illustrating a close-up, cross-sectional view of an apparatus comprising an optical setup and a photon detector array. As shown, article 150 comprises a surface 152 and at least surface feature 154. Photons emitted from a single photon emitter or a plurality of photon emitters may be scattered by the surface feature 154 and collected and detected by a combination comprising an optical setup 120 coupled to a photon detector array 130, which combination may be place at an optimized distance and/or an optimized angle for a maximum acceptance of scattered photons and/or one or more types of features. The optical setup 120, which may comprise a telecentric lens, may collect and focus the photons scattered from the surface feature 154 onto one or more pixel sensors 132 of photon detector array 130, which one or more pixel sensors each comprises a photon detector coupled to an amplifier. The one or more pixel sensors 132, each of which corresponds to a pixel in a map of an article's surface features, may provide one or more signals to the mapping means for mapping the surface feature 154 as shown, for example, in Fig. 6A, which is a close-up image of the map of surface features provided in Fig. 5, which, in turn, is a close-up image of the map of surface features provided in Fig. 4. The mapping means may subsequently use pixel interpolation for further mapping the surface feature 154 as shown in Fig. 6B. [0035] An apparatus for detection and/or mapping of surface features of articles may further comprise one or more computers or equivalent devices (e.g., devices that include primary and/or secondary memory and one or more processing elements operable to carry out arithmetic and logical operations) loaded with appropriate instructions operable to, but not limited to, convey each article to the apparatus for inspection; position each article for inspection, optionally including gradational rotation of the article for piecewise inspection; hold each article for inspection; insert optical components into the optical setup; remove optical components from the optical setup; position and/or otherwise adjust optical components for inspection; move each photon emitter into position for inspection, wherein the position for inspection may include an optimized photon emitter-article distance and/or angle (e.g., angle of incidence); switch each photon emitter on and off, or otherwise between modes for emitting photons and not emitting photons; move each photon detector array into position for inspection, wherein the position for inspection may include an optimized photon detector array- article distance and/or angle (e.g., scatter angle); switch each photon detector array on and off, or otherwise between modes for detecting photons and not detecting photons; process photon detector array signals, optionally including pixel interpolation for better accuracy (e.g., 10x better than pixel size) with respect to the mapped position of surface features; map surface features of articles from photon detector array signals or processed photon detector array signals; characterize surface features of articles with respect to type (e.g., particle, stains, scratches, voids, etc.) and/or size (e.g., volume from integration of photon scattering intensity distribution); catalog surface features of articles; and determine trends with respect to surface features of articles.
[0036] The apparatus comprising the one or more computers or equivalent devices may be operable to detect and/or map surface features of articles that are nanometer- sized (i.e., admits of nm units as measured) or smaller in their smallest dimension (e.g., length, width, height, or depth, depending on the surface feature); however, the apparatus is not limited to mapping surface features of articles that are nanometer-sized or smaller, as the apparatus may be operable to map surface features of articles that are micrometer-sized (i.e., admits of μιτι units as measured) or larger. In some embodiments, for example, the apparatus comprising the one or more computers or equivalent devices may be operable to map surface features of articles smaller than 500 nm, 250 nm, 200 nm, 150 nm, 125 nm, 1 10 nm, 100 nm, 90 nm, 80 nm, 70 nm, 60 nm, 50 nm, 40 nm, 30 nm, 20 nm, 10 nm, or 1 nm (10 A) in their smallest dimension, or even smaller, such as surface features of articles smaller than 9 A, 8 A, 7 A, 6 A, 5 A, 4 A, 3 A, 2 A, or 1 A in their smallest dimension. In view of the foregoing, the apparatus comprising the one or more computers or equivalent devices may be operable to, in some embodiments, for example, map surface features of articles between 0.1 nm and 1000 nm, such as between 0.1 nm and 500 nm, including between 0.1 nm and 250 nm, and further including between 0.1 nm and 100 nm, and even further including between 0.1 nm and 80 nm.
[0037] In view of the foregoing, the apparatus may be operable to detect and/or map surface features of articles such as particle contamination comprising particles that are nanometer-sized (i.e., admits of nm units as measured) or smaller in their smallest dimension (e.g., length, width, or height). In some embodiments, for example, the apparatus may be operable to detect and/or map surface and/or subsurface particles smaller than 125 nm, such as smaller than 100 nm, including smaller than 80 nm, and further including smaller than 10 nm in their smallest dimension. In some embodiments, for example, the apparatus may be operable to map surface and/or subsurface particles smaller than 4 nm in height.
[0038] Further in view of the foregoing, the apparatus may be operable to detect and/or map surface features of articles such as defects comprising scratches (e.g., circumferential scratches) that are micrometer-sized (i.e., admits of μιτι units as measured) or smaller, such as nanometer-sized (i.e., admits of nm units as measured) or smaller, such as angstrom-sized (i.e., admits of A units as measured) or smaller, in their smallest dimension (e.g., length, width, or depth). With respect to micrometer-sized scratches, the apparatus may be operable to detect and/or map scratches from, for example, 1 μιτι to 1000 μιτι in length, which may be significantly longer than the wavelength of photons/light emitted from a photon emitter of the apparatus. In some embodiments, for example, the apparatus may be operable to detect and/or map surface features such as defects comprising scratches smaller than 1000 μιτι, such as smaller than 500 μιτι, including smaller than 250 μιτι, further including smaller than 100 μητι, and even further including smaller than 50 μιτι in scratch length. With respect to nanometer-sized scratches, the apparatus may be operable to detect and/or map scratches from, for example, 1 nm to 500 nm in scratch width. In some embodiments, for example, the apparatus may be operable to detect and/or map surface features such as defects comprising scratches smaller than 500 nm, such as smaller than 250 nm, including smaller than 100 nm, further including smaller than 50 nm, and even further including smaller than 15 nm in scratch width. Surprisingly, due to a high level of spatial coherence, the apparatus may be operable to detect and/or map angstrom-sized scratches with respect to scratch depth. In some embodiments, for example, the apparatus may be operable to detect and/or map surface features such as defects comprising scratches smaller than 50 A, such as smaller than 25 A, including smaller than 10 A, further including smaller than 5 A, and even further including smaller than 1 A (e.g., 0.5 A) in scratch depth. For example, the apparatus may be operable to detect and/or map surface features such as defects comprising scratches smaller than 500 μιτι in length, smaller than 100 nm in width, and smaller than 50 A in depth.
[0039] The apparatus comprising the one or more computers or equivalent devices may be operable to accurately and/or precisely map the position of a feature on an article's surface. With respect to accuracy, the apparatus comprising the one or more computers or equivalent devices may be operable to map the position of a feature on an article's surface within a micrometer-sized (i.e., admits of μιτι units as measured) radius or better. In some embodiments, for example, the apparatus comprising the one or more computers or equivalent devices may be operable to accurately map the position of a feature on an article's surface within a radius of 100 μιτι, 90 μιτι, 80 μιτι, 70 μιτι, 60 μιτι, 50 μιτι, 40 μιτι, 30 μιτι, 20 μιτι, 10 μιτι, 9 μιτι, 8 μιτι, 7 μιτι, 6 μιτι, 5 μιτι, 4 μιτι, 3 μιτι, 2 μιτι, or 1 μιτι, or better. Combinations of the foregoing may also be used to describe the accuracy with which the apparatus comprising the one or more computers or equivalent devices may map the position of a feature on an article's surface. In some embodiments, for example, the apparatus comprising the one or more computers or equivalent devices may be operable to accurately map the position of a feature on an article's surface within a radius ranging from 1 μιτι to 100 μιτι, such as from 1 μιτι to 50 μιτι, including from 1 μιτι to 30 μιτι, and further including from 5 μιτι to 10 μιτι. [0040] The apparatus comprising the one or more computers or equivalent devices may be operable to accurately and/or precisely map the position of a feature on an article's surface (e.g., Figs. 6A (top) and 6B (top)) along with the feature's photon scattering intensity distribution (e.g., Figs. 6A (bottom) and 6B (bottom)). Mathematical integration of such a photon scattering intensity distribution provides the size (e.g., volume) of the respective feature. As such, the apparatus described herein may characterize surface features both qualitatively and quantitatively. With respect to qualitative characterization of surface features, qualitative characterization includes a determination of surface feature type (e.g., particle, stain, scratch, void, etc.). With respect to quantitative characterization of surface features, quantitative characterization includes a determination of surface feature position on the article and/or surface feature size. Quantitative characterization of surface features may further include the total number of surface features per article, as well as the number of each type of surface feature. Such characterization information may be cataloged across a plurality of articles and be used to correct manufacturing trends leading to surface and/or subsurface defects.
[0041 ] Depending upon factors that may include the type of article, the type of surface features, and the like, it may be desirable at times to increase the number of photons (e.g., photon energy) emitted from a single photon emitter or a plurality of photon emitters to provide an increased scattering signal for characterization (e.g., qualitative and/or quantitative) of surface features of articles. Such an increase in photon energy may be with respect to unit time for increased photon power or photon flux, or with respect to unit area for increased photon flux density. Alternately, or in addition, it may be desirable to increase detection time of a single photon emitter or a plurality of photon emitters to detect more photons for accurately and/or precisely mapping surface features. Alternately to one or both of increasing the photon energy or detection time, or in addition to increasing the photon energy and detection time, it may be desirable at times to minimize background noise including stray light from one or more photon emitters, background light, and/or background fluorescent radiation.
[0042] The apparatus described herein may be configured to process or inspect articles at a rate greater than or commensurate with the rate at which the articles or workpieces thereof are produced. In some embodiments, for example, the apparatus may be configured to process or inspect articles at a rate of at least 1 , 2, 3, 4, 5, 6, 7, 8, 9, 10, 12, 14, 16, 18, or 20 article(s) per second, which rate may be commensurate with the rate at which the articles or workpieces thereof are produced. In some embodiments, for example, the apparatus may be configured to process or inspect articles at a rate of no more than 20, 18, 16, 14, 12, 10, 9, 8, 7, 6, 5, 4, 3, 2, or 1 article(s) per second, which rate may be commensurate with the rate at which the articles or workpieces thereof are produced. Combinations of the foregoing may also be used to describe the rate at which the articles or workpieces thereof are processed or inspected by the apparatus. In some embodiments, for example, the apparatus may be configured to process or inspect at least 1 and no more than 20 articles per second (e.g., between 1 and 20 articles per second), such as at least 1 and no more than 10 articles per second (e.g., between 1 and 10 articles per second), including at least 1 and no more than 5 articles per second (e.g., between 1 and 5 articles per second). Processing or inspecting articles at rates greater than or commensurate with the rate at which the articles or workpieces thereof are produced is a function of many features of the apparatus described herein, including, but not limited to, photon emitters and/or articles that need not be moved (e.g., for scanning) during processing or inspecting. For example, an article such as a hard disk of a hard disk drive need not be rotated during processing or inspecting. As such, the apparatus may be configured to hold an article stationary while emitting photons onto the surface of the article.
[0043] While the apparatus may be configured to process or inspect articles a rate greater than or commensurate with the rate at which the articles or workpieces thereof are produced, the apparatus may operate at a slower rate if needed. In some embodiments, for example, the apparatus may be configured to process or inspect articles at a rate less than one article per second. In such embodiments, for example, the apparatus may be configured to process or inspect articles at a rate less than one article per 5, 10, 25, 50, 75, or 100, or more, second(s).
[0044] The apparatus described herein comprising a photon emitter, an optical setup, a photon detector array, and a mapping means may be fully automated and function in different modes, including, but not limited to, an ultrafast mode, an ultrasensitive mode, and ultrasensitive plus mode. With respect to the ultrafast mode, the apparatus may operate at least 200 times faster than an optical surface analyzer (e.g., KLA-Tencor Candela CS10 or CS20), detect surface features such as defects comprising embedded particles down to at least 100 nm, partially detect surface features such as defects comprising scratches (e.g., nanometer-sized scratches), and provide measurements of roughness. With respect to the ultrasensitive mode, the apparatus may operate at least 50 times faster than an optical surface analyzer, detect surface features such as defects comprising embedded particles down to at least 30 nm, and provide measurements of roughness. With respect to the ultrasensitive plus mode, the apparatus may operate at least 20 times faster than an optical surface analyzer, detect surface features such as defects comprising embedded particles down to at least 30 nm, fully detect surface features such as defects comprising scratches (e.g., nano-scratches), and provide measurements of roughness.
[0045] As such, as provided herein, is an apparatus, comprising a photon emitter configured to emit photons onto a surface of an article, a photon detector array comprising a plurality of photon detectors configured to receive photons scattered from features in the surface of the article; and a mapping means for mapping the features in the surface of the article, wherein the apparatus is configured to characterize the features in the surface of the article by analyzing the photons received at the plurality of photon detectors. In some embodiments, the apparatus is configured to hold the article in a stationary position while emitting photons onto the surface of the article. In some embodiments, the apparatus further comprises a telecentric lens, wherein the telecentric lens is coupled to the photon detector array. In some embodiments, the apparatus is operable to process articles at a rate faster than one article every 100 seconds. In some embodiments, the apparatus is operable to map features smaller than 80 nm in their smallest dimension. In some embodiments, the apparatus is operable to map features greater than 0.10 nm in their smallest dimension. In some embodiments, the mapping means is operable to map features with at least a 10-μιτι accuracy with respect to location.
[0046] Also provided herein is an apparatus, comprising a photon emitter configured to emit photons onto a surface of an article, a photon detector array comprising a plurality of photon detectors configured to receive photons scattered from features in the surface of the article; and a mapping means for mapping the features in the surface of the article, wherein the apparatus is operable to process articles at a rate faster than one article every 100 seconds. In some embodiments, the apparatus is configured to hold the article in a stationary position while emitting photons onto the surface of the article. In some embodiments, the apparatus further comprises a telecentric lens, wherein the telecentric lens is coupled to the photon detector array. In some embodiments, the apparatus is operable to process articles at a rate faster than one article per second. In some embodiments, the apparatus is operable to map features smaller than 80 nm in their smallest dimension. In some embodiments, the apparatus is operable to map features greater than 0.10 nm in their smallest dimension. In some embodiments, the mapping means is operable to map features down to at least a 10-μιτι precision with respect to location.
[0047] Also provided is an apparatus, comprising a photon emitter configured to emit photons onto a surface of an article; a telecentric lens; a photon detector array comprising a plurality of photon detectors coupled to the lens configured to receive photons scattered from one or more features in the surface of the article; and a mapping means for mapping the one or more features in the surface of the article, wherein the apparatus is operable to map features smaller than 80 nm in their smallest dimension. In some embodiments, the apparatus is configured to hold the article in a stationary position while emitting photons onto the surface of the article. In some embodiments, the apparatus is operable to process articles at a rate faster than one article every 100 seconds. In some embodiments, the apparatus is operable to process articles at a rate faster than one article per second. In some embodiments, the apparatus is operable to map features smaller than 25 nm in their smallest dimension. In some embodiments, the apparatus is operable to map features greater than 0.10 nm in their smallest dimension. In some embodiments, the mapping means is operable to map features with at least a 10-μιτι accuracy with respect to location.
[0048] Also provided is an apparatus, comprising a photon emitter configured to emit photons onto a surface of an article; a telecentric lens; a photon detector array coupled to the lens configured to receive photons scattered from one or more features in the surface of the article; and a mapping means for mapping the one or more features in the surface of the article, wherein the apparatus is operable to map features smaller than 80 nm in their smallest dimension. In some embodiments, the apparatus is configured to hold the article in a stationary position while emitting photons onto the surface of the article. In some embodiments, the apparatus is operable to process articles at a rate faster than one article every 100 seconds. In some embodiments, the apparatus is operable to process articles at a rate faster than one article per second. In some embodiments, the apparatus is operable to map features smaller than 25 nm in their smallest dimension. In some embodiments, the apparatus is operable to map features greater than 0.10 nm in their smallest dimension. In some embodiments, the mapping means is operable to map features down to at least a 10-μιτι precision with respect to location.
[0049] Also provided is an apparatus, comprising a photon emitting means for emitting photons onto a surface of an article, a photon detecting means for detecting photons scattered from features in the surface of the article; and a mapping means for mapping the features in the surface of the article, wherein the apparatus is operable to process articles at a rate faster than one article every 100 seconds. In some embodiments, the apparatus is configured to hold the article in a stationary position while emitting photons onto the surface of the article. In some embodiments, the article is greater than 500 square micrometers. In some embodiments, the apparatus is operable to process articles at a rate faster than five article per second. In some embodiments, the apparatus is operable to map features smaller than 80 nm in their smallest dimension. In some embodiments, the mapping means is further for analyzing scattering intensity distribution of photons scattered from features in the surface of the article.
[0050] Also provided is an apparatus, comprising a photon emitting means for emitting photons onto a surface of an article, a photon detecting means for detecting photons scattered from features in the surface of the article; and a mapping means for mapping the features in the surface of the article, wherein the mapping means is operable to map features down to at least a 10-μιτι precision with respect to location. In some embodiments, the apparatus is configured to hold the article in a stationary position while emitting photons onto the surface of the article. In some embodiments, the apparatus is operable to process articles at a rate faster than one article every 100 seconds. In some embodiments, the apparatus is operable to process articles at a rate faster than one article per second. In some embodiments, the apparatus is operable to map features smaller than 80 nm in their smallest dimension. In some embodiments, the mapping means is further configured to map scattering intensity distribution of photons scattered from features in the surface of the article.
[0051 ] Also provided herein is a device, comprising a feature mapper configured to map features about a surface of an article from signals provided by a photon detector array, wherein the signals correspond to photons scattered from the features about the surface of the article, and wherein the feature mapper is configured for characterizing the features about the surface of the article by analyzing the photons received at the photon detector array. In some embodiments, the feature mapper is configured for qualitatively and/or quantitatively characterizing the features about the surface of the article. In some embodiments, quantitatively characterizing the features about the surface of the article comprises determining the size and/or number of features about the surface of the article. In some embodiments, the device is operable to map features smaller than 80 nm in their smallest dimension. In some embodiments, the device is operable to process articles at a rate faster than one article every 100 seconds.
[0052] While the invention has been described and/or illustrated by means of particular embodiments and/or examples, and while these embodiments and/or examples have been described in considerable detail, it is not the intention of the applicant(s) to restrict or in any way limit the scope of the invention to such detail. Additional adaptations and/or modifications of the invention may readily appear to persons having ordinary skill in the art to which the invention pertains, and, in its broader aspects, the invention may encompass these adaptations and/or modifications. Accordingly, departures may be made from the foregoing embodiments and/or examples without departing from the scope of the invention, which scope is limited only by the following claims when appropriately construed.

Claims

CLAIMS What is claimed is:
1 . An apparatus, comprising:
a photon emitter configured to emit photons onto a surface of an article, a photon detector array comprising a plurality of photon detectors configured to receive photons scattered from features in the surface of the article; and
a mapping means for mapping the features in the surface of the article,
wherein the apparatus is configured to characterize the features in the surface of the article by analyzing the photons received at the plurality of photon detectors.
2. The apparatus of Claim 1 , wherein the apparatus is configured to hold the article in a stationary position while emitting photons onto the surface of the article.
3. The apparatus of either one of Claim 1 or Claim 2, further comprising a telecentric lens, wherein the telecentric lens is coupled to the photon detector array.
4. The apparatus of any one of Claims 1 -3, wherein the apparatus is operable to process articles at a rate faster than one article per 10 seconds.
5. The apparatus of any one of Claims 1 -4, wherein the apparatus is operable to map features smaller than 80 nm in their smallest dimension.
6. The apparatus of any one of Claims 1 -5, wherein the apparatus is operable to map features greater than 0.10 nm in their smallest dimension.
7. The apparatus of any one of Claims 1 -6, wherein the mapping means is operable to map features with at least a 10-μιτι accuracy with respect to location.
8. An apparatus, comprising:
a photon emitter configured to emit photons onto a surface of an article;
a telecentric lens;
a photon detector array comprising a plurality of photon detectors coupled to the lens configured to receive photons scattered from one or more features in the surface of the article; and
a mapping means for mapping the one or more features in the surface of the article,
wherein the apparatus is operable to map features smaller than 80 nm in their smallest dimension.
9. The apparatus of Claim 8, wherein the apparatus is configured to hold the article in a stationary position while emitting photons onto the surface of the article.
10. The apparatus of either one of Claim 8 or Claim 9, wherein the apparatus is operable to process articles at a rate faster than one article every 100 seconds.
1 1 . The apparatus of either one of Claim 8 or Claim 9, wherein the apparatus is operable to process articles at a rate faster than one article per second.
12. The apparatus of any one of Claims 8-1 1 , wherein the apparatus is operable to map features smaller than 25 nm in their smallest dimension.
13. The apparatus of any one of Claims 8-12, wherein the apparatus is operable to map features greater than 0.10 nm in their smallest dimension.
14. The apparatus of any one of Claims 8-13, wherein the mapping means is operable to map features with at least a 10-μιτι accuracy with respect to location.
15. An apparatus, comprising:
a photon emitting means for emitting photons onto a surface of an article, a photon detecting means for detecting photons scattered from features in the surface of the article; and
a mapping means for mapping the features in the surface of the article,
wherein the apparatus is operable to process articles at a rate faster than one article every 100 seconds.
16. The apparatus of Claim 15, wherein the apparatus is configured to hold the article in a stationary position while emitting photons onto the surface of the article.
17. The apparatus of either one of Claim 15 or Claim 16, wherein the article is greater than 500 square micrometers.
18. The apparatus of any one of Claims 15-17, wherein the apparatus is operable to process articles at a rate faster than five article per second.
19. The apparatus of any one of Claims 15-18, wherein the apparatus is operable to map features smaller than 80 nm in their smallest dimension.
20. The apparatus of any one of Claims 15-19, wherein the mapping means is further for analyzing scattering intensity distribution of photons scattered from features in the surface of the article.
21 . A device, comprising:
a feature mapper configured to map features about a surface of an article from signals provided by a photon detector array,
wherein the signals correspond to photons scattered from the features about the surface of the article, and
wherein the feature mapper is configured for characterizing the features about the surface of the article by analyzing the photons received at the photon detector array.
22. The device of Claim 21 , wherein the feature mapper is configured for qualitatively and/or quantitatively characterizing the features about the surface of the article.
23. The device of Claims 22, wherein quantitatively characterizing the features about the surface of the article comprises determining the size and/or number of features about the surface of the article.
24. The device of any one of Claims 21 -23, wherein the device is operable to map features smaller than 80 nm in their smallest dimension.
25. The device of any one of Claims 21 -24, wherein the device is operable to process articles at a rate faster than one article every 100 seconds.
PCT/US2013/040271 2012-05-09 2013-05-09 Surface features mapping WO2013169980A1 (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
KR1020147034291A KR102093108B1 (en) 2012-05-09 2013-05-09 Surface features mapping
EP13787014.3A EP2847556A4 (en) 2012-05-09 2013-05-09 Surface features mapping
CN201380035014.0A CN104412079B (en) 2012-05-09 2013-05-09 Surface characteristics maps
MYPI2014703311A MY182531A (en) 2012-05-09 2013-05-09 Surface features mapping
JP2015511681A JP6289450B2 (en) 2012-05-09 2013-05-09 Surface feature mapping
CA2872898A CA2872898A1 (en) 2012-05-09 2013-05-09 Surface features mapping
SG11201407341TA SG11201407341TA (en) 2012-05-09 2013-05-09 Surface features mapping
PH12014502486A PH12014502486B1 (en) 2012-05-09 2014-11-07 Surface features mapping
IL235589A IL235589A0 (en) 2012-05-09 2014-11-09 Surface features mapping

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261644998P 2012-05-09 2012-05-09
US61/644,998 2012-05-09

Publications (1)

Publication Number Publication Date
WO2013169980A1 true WO2013169980A1 (en) 2013-11-14

Family

ID=49548370

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2013/040271 WO2013169980A1 (en) 2012-05-09 2013-05-09 Surface features mapping

Country Status (12)

Country Link
US (3) US9036142B2 (en)
EP (1) EP2847556A4 (en)
JP (2) JP6289450B2 (en)
KR (1) KR102093108B1 (en)
CN (1) CN104412079B (en)
CA (1) CA2872898A1 (en)
IL (1) IL235589A0 (en)
MY (1) MY182531A (en)
PH (1) PH12014502486B1 (en)
SG (1) SG11201407341TA (en)
TW (1) TWI592652B (en)
WO (1) WO2013169980A1 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9212900B2 (en) 2012-08-11 2015-12-15 Seagate Technology Llc Surface features characterization
US9297751B2 (en) 2012-10-05 2016-03-29 Seagate Technology Llc Chemical characterization of surface features
US9297759B2 (en) 2012-10-05 2016-03-29 Seagate Technology Llc Classification of surface features using fluorescence
JP2014077660A (en) * 2012-10-09 2014-05-01 Fuji Xerox Co Ltd Detector
US9377394B2 (en) 2012-10-16 2016-06-28 Seagate Technology Llc Distinguishing foreign surface features from native surface features
US9217714B2 (en) * 2012-12-06 2015-12-22 Seagate Technology Llc Reflective surfaces for surface features of an article
US9217715B2 (en) 2013-05-30 2015-12-22 Seagate Technology Llc Apparatuses and methods for magnetic features of articles
US9581554B2 (en) * 2013-05-30 2017-02-28 Seagate Technology Llc Photon emitter array
US9513215B2 (en) * 2013-05-30 2016-12-06 Seagate Technology Llc Surface features by azimuthal angle
US9201019B2 (en) 2013-05-30 2015-12-01 Seagate Technology Llc Article edge inspection
US9274064B2 (en) 2013-05-30 2016-03-01 Seagate Technology Llc Surface feature manager
US20230314682A1 (en) * 2022-03-29 2023-10-05 Intel Corporation Apparatuses and methods for inspecting embedded features

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5661559A (en) * 1996-03-14 1997-08-26 Phase Metrics, Inc. Optical surface detection for magnetic disks
US6449036B1 (en) * 1997-04-25 2002-09-10 Baumer Optronic Gmbh Sensor unit, process and device for inspecting the surface of an object
US20050280808A1 (en) * 2004-06-16 2005-12-22 Leica Microsystems Semiconductor Gmbh Method and system for inspecting a wafer
US20090323051A1 (en) * 2006-05-17 2009-12-31 Hitachi High-Technologies Corporation Optical inspection method and optical inspection apparatus
US20110141272A1 (en) * 2008-09-30 2011-06-16 Sachio Uto Apparatus and method for inspecting an object surface defect

Family Cites Families (124)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4207467A (en) 1978-09-05 1980-06-10 Laser Precision Corp. Film measuring apparatus and method
US4806776A (en) 1980-03-10 1989-02-21 Kley Victor B Electrical illumination and detecting apparatus
US4598997A (en) 1982-02-15 1986-07-08 Rca Corporation Apparatus and method for detecting defects and dust on a patterned surface
US4477890A (en) 1982-03-01 1984-10-16 Discovision Associates Mapping disc defect detector
GB2130835A (en) 1982-10-04 1984-06-06 Andrzej Kamil Drukier Apparatus for the diagnosis of body structures into which a gamma-emitting radioactive isotape has been introduced
US4551919A (en) * 1982-10-27 1985-11-12 Mitutoyo Mfg. Co., Ltd. Measuring instrument
JPS6211151A (en) * 1985-07-08 1987-01-20 Dainippon Screen Mfg Co Ltd Apparatus for inspecting surface flaw
JPS6313342A (en) * 1986-07-04 1988-01-20 Hitachi Ltd Fine foreign material inspecting device
US4794550A (en) * 1986-10-15 1988-12-27 Eastman Kodak Company Extended-range moire contouring
GB8729246D0 (en) 1987-12-15 1988-01-27 Renishaw Plc Opto-electronic scale-reading apparatus
US5131755A (en) * 1988-02-19 1992-07-21 Chadwick Curt H Automatic high speed optical inspection system
US5066130A (en) 1988-05-10 1991-11-19 Canon Kabushiki Kaisha Displacement measuring apparatus
US5058178A (en) 1989-12-21 1991-10-15 At&T Bell Laboratories Method and apparatus for inspection of specular, three-dimensional features
JPH05223532A (en) 1991-07-10 1993-08-31 Raytheon Co Automatic sight-check system
US5168322A (en) 1991-08-19 1992-12-01 Diffracto Ltd. Surface inspection using retro-reflective light field
US5563702A (en) 1991-08-22 1996-10-08 Kla Instruments Corporation Automated photomask inspection apparatus and method
JPH0682378A (en) * 1992-09-01 1994-03-22 Nikon Corp Defect inspection device
JPH06194320A (en) * 1992-12-25 1994-07-15 Hitachi Ltd Method and equipment for inspecting mirror face substrate in semiconductor manufacturing line and method for manufacturing
JPH06241758A (en) 1993-02-15 1994-09-02 Canon Inc Flaw inspection device
EP0622624B1 (en) 1993-04-23 1999-12-01 Research Development Corporation Of Japan A method for observing film thickness and/or refractive index
US5627638A (en) 1993-07-01 1997-05-06 Prolaser Ltd. Method and apparatus for detecting defects in lenses
IL110618A (en) 1994-08-10 1996-12-05 Optomic Techn Corp Ltd Device for testing optical elements
JP3483948B2 (en) 1994-09-01 2004-01-06 オリンパス株式会社 Defect detection device
US5548403A (en) 1994-11-28 1996-08-20 The Regents Of The University Of California Phase shifting diffraction interferometer
JPH08178867A (en) 1994-12-26 1996-07-12 Aichi Steel Works Ltd Flat steel hot flaw-detecting device
US5726455A (en) 1995-06-30 1998-03-10 Stormedia, Inc. Disk film optical measurement system
EP0766298A3 (en) * 1995-09-27 1998-09-16 Shin-Etsu Handotai Co., Ltd. Method of and apparatus for determining residual damage to wafer edges
JPH09178867A (en) 1995-12-26 1997-07-11 Casio Comput Co Ltd Analog watch
JPH11125602A (en) * 1996-07-01 1999-05-11 Advantest Corp Method and device for analyzing foreign matter
US5778039A (en) 1996-02-21 1998-07-07 Advanced Micro Devices, Inc. Method and apparatus for the detection of light elements on the surface of a semiconductor substrate using x-ray fluorescence (XRF)
US5781649A (en) 1996-04-15 1998-07-14 Phase Metrics, Inc. Surface inspection of a disk by diffraction pattern sampling
US6556783B1 (en) * 1997-01-16 2003-04-29 Janet L. Gelphman Method and apparatus for three dimensional modeling of an object
JP3692685B2 (en) 1997-02-19 2005-09-07 株式会社ニコン Defect inspection equipment
US5774212A (en) 1997-03-19 1998-06-30 General Electric Co. Method and apparatus for detecting and analyzing directionally reflective surface flaws
US5898491A (en) 1997-03-28 1999-04-27 Hitachi Electronics Engineering Co. Ltd. Surface defect test method and surface defect tester
US5909276A (en) * 1997-03-31 1999-06-01 Microtherm, Llc Optical inspection module and method for detecting particles and defects on substrates in integrated process tools
JPH10282009A (en) * 1997-04-04 1998-10-23 Toshiba Corp Fine grain evaluation method and apparatus
US5859698A (en) 1997-05-07 1999-01-12 Nikon Corporation Method and apparatus for macro defect detection using scattered light
US6040592A (en) * 1997-06-12 2000-03-21 Intel Corporation Well to substrate photodiode for use in a CMOS sensor on a salicide process
US5973839A (en) 1998-03-05 1999-10-26 Hewlett-Packard Company Optical homogenizer
US20010036588A1 (en) * 1998-05-05 2001-11-01 Ims-Ionen Mikrofabrikations Systeme Gmbh Lithographic imaging of a structure pattern onto one or more fields on a substrate
IL126866A (en) 1998-11-02 2003-02-12 Orbotech Ltd Apparatus and method for fabricating flat workpieces
US6256097B1 (en) 1999-01-08 2001-07-03 Rudolph Technologies, Inc. Ellipsometer and ellipsometry method
DE19909534B4 (en) 1999-03-04 2011-07-07 BYK-Gardner GmbH, 82538 Apparatus and method for determining the quality of structured surfaces
US6529270B1 (en) 1999-03-31 2003-03-04 Ade Optical Systems Corporation Apparatus and method for detecting defects in the surface of a workpiece
EP1116932A3 (en) * 2000-01-14 2003-04-16 Leica Microsystems Wetzlar GmbH Measuring apparatus and method for measuring structures on a substrat
US6476908B1 (en) * 2000-04-10 2002-11-05 Eclipse Optics, Inc. Optical probe
US6483584B1 (en) 2000-04-14 2002-11-19 National Science Council Device for measuring the complex refractive index and thin film thickness of a sample
US7751609B1 (en) * 2000-04-20 2010-07-06 Lsi Logic Corporation Determination of film thickness during chemical mechanical polishing
US6392745B1 (en) 2000-06-13 2002-05-21 American Air Liquide, Inc. Method and apparatus for the fast detection of surface characteristics
DE10031558A1 (en) 2000-06-28 2002-01-10 Clariant Gmbh Process for conditioning organic pigments
FR2811761B1 (en) 2000-07-17 2002-10-11 Production Rech S Appliquees HIGH SPACE RESOLUTION ELLIPSOMETER OPERATING IN THE INFRARED
US6731383B2 (en) * 2000-09-12 2004-05-04 August Technology Corp. Confocal 3D inspection system and process
JP2002190444A (en) * 2000-10-10 2002-07-05 Canon Inc Pattern projection aligner, pattern preparation method, and device prepared by the pattern projection aligner and the preparation method
US6630996B2 (en) 2000-11-15 2003-10-07 Real Time Metrology, Inc. Optical method and apparatus for inspecting large area planar objects
US6809809B2 (en) 2000-11-15 2004-10-26 Real Time Metrology, Inc. Optical method and apparatus for inspecting large area planar objects
US6515742B1 (en) 2000-11-28 2003-02-04 Memc Electronic Materials, Inc. Defect classification using scattered light intensities
US6509966B2 (en) 2000-12-27 2003-01-21 Hitachi Electronics Engineering Co., Ltd. Optical system for detecting surface defect and surface defect tester using the same
US6617603B2 (en) 2001-03-06 2003-09-09 Hitachi Electronics Engineering Co., Ltd. Surface defect tester
WO2002079760A2 (en) 2001-03-30 2002-10-10 Therma-Wave, Inc. Polarimetric scatterometer for critical dimension measurements of periodic structures
JP3933581B2 (en) * 2001-04-06 2007-06-20 アクゾ ノーベル コーティングス インターナショナル ビー ヴィ Method and apparatus for surface evaluation
JP2002340811A (en) * 2001-05-21 2002-11-27 Silicon Technology Co Ltd Surface evaluation device
US6617087B1 (en) * 2001-06-27 2003-09-09 Advanced Micro Devices, Inc. Use of scatterometry to measure pattern accuracy
JP2003202214A (en) 2002-01-04 2003-07-18 Mitsubishi Electric Corp Shape measuring device and shape measuring method
JP4102081B2 (en) * 2002-02-28 2008-06-18 株式会社荏原製作所 Polishing apparatus and foreign matter detection method for polished surface
KR100798320B1 (en) * 2002-03-06 2008-01-28 엘지.필립스 엘시디 주식회사 Appratus and method for testing liquid crystal display panel
US20040207836A1 (en) * 2002-09-27 2004-10-21 Rajeshwar Chhibber High dynamic range optical inspection system and method
US6847907B1 (en) 2002-12-31 2005-01-25 Active Optical Networks, Inc. Defect detection and repair of micro-electro-mechanical systems (MEMS) devices
DE10313038B4 (en) * 2003-03-24 2005-02-17 Klingelnberg Gmbh Device for detecting the position of a probe element in a multi-coordinate measuring device
DE10330005B4 (en) * 2003-07-03 2006-12-21 Leica Microsystems Semiconductor Gmbh Device for inspecting a wafer
US20050067740A1 (en) 2003-09-29 2005-03-31 Frederick Haubensak Wafer defect reduction by short pulse laser ablation
FR2860869B1 (en) * 2003-10-10 2007-04-20 Optis PORTABLE DEVICE FOR MEASURING THE LIGHT INTENSITY OF AN OBJECT AND USE OF SUCH A DEVICE
US7433031B2 (en) * 2003-10-29 2008-10-07 Core Tech Optical, Inc. Defect review system with 2D scanning and a ring detector
DE10359722A1 (en) * 2003-12-19 2005-07-14 Leica Microsystems Semiconductor Gmbh Method for inspecting a wafer
US8077305B2 (en) * 2004-04-19 2011-12-13 Owen Mark D Imaging semiconductor structures using solid state illumination
US7580126B2 (en) 2004-06-30 2009-08-25 Chemimage Corp. Method and apparatus for producing a streaming Raman image of nucleation, aggregation, and chemical interaction
US7489399B1 (en) 2004-08-20 2009-02-10 Kla-Tencor Corporation Spectroscopic multi angle ellipsometry
WO2006066205A2 (en) 2004-12-19 2006-06-22 Ade Corporation System and method for inspection of a workpiece surface using multiple scattered light collectors
US20060147814A1 (en) 2005-01-03 2006-07-06 Ted Liang Methods for repairing an alternating phase-shift mask
JP2006308511A (en) 2005-05-02 2006-11-09 Canon Inc Chemical analysis apparatus and analysis method
US8243272B2 (en) 2005-09-19 2012-08-14 Jmar Llc Systems and methods for detecting normal levels of bacteria in water using a multiple angle light scattering (MALS) instrument
US7463369B2 (en) 2006-03-29 2008-12-09 Kla-Tencor Technologies Corp. Systems and methods for measuring one or more characteristics of patterned features on a specimen
WO2007121208A2 (en) * 2006-04-11 2007-10-25 Massachusetts Institute Of Technology Nanometer-precision tip-to-substrate control and pattern registration for scanning-probe lithography
US20090122304A1 (en) 2006-05-02 2009-05-14 Accretech Usa, Inc. Apparatus and Method for Wafer Edge Exclusion Measurement
JP5138268B2 (en) * 2006-06-14 2013-02-06 株式会社タニタ Dimensional measuring device
EP2041535A4 (en) 2006-06-29 2010-08-04 Cdex Inc Methods and apparatus for molecular species detection, inspection and classification using ultraviolet to near infrared enhanced photoemission spectroscopy
TWI429896B (en) 2006-07-27 2014-03-11 Rudolph Technologies Inc Ellipsometric metrology tool and method of monitoring a babrication process
JP4843399B2 (en) 2006-07-31 2011-12-21 株式会社日立ハイテクノロジーズ Inspection apparatus and inspection method
KR100763942B1 (en) 2006-09-04 2007-10-05 (주)포씨스 Surface inspection system
US7508508B2 (en) * 2006-09-19 2009-03-24 Seethrough Ltd. Device and method for inspecting a hair sample
US7714996B2 (en) 2007-01-23 2010-05-11 3i Systems Corporation Automatic inspection system for flat panel substrate
WO2008139735A1 (en) 2007-05-14 2008-11-20 Nikon Corporation Surface tester and surface testing method
US7636156B2 (en) 2007-06-15 2009-12-22 Qimonda Ag Wafer inspection system and method
JP2009014510A (en) * 2007-07-04 2009-01-22 Hitachi High-Technologies Corp Inspection method and inspection apparatus
CN201069386Y (en) * 2007-09-06 2008-06-04 复旦大学 LED optical pass testing device
JP2009139248A (en) 2007-12-07 2009-06-25 Hitachi High-Technologies Corp Defect detecting optical system and surface defect inspecting device for mounting defect detecting image processing
IL188825A0 (en) * 2008-01-16 2008-11-03 Orbotech Ltd Inspection of a substrate using multiple cameras
KR100913484B1 (en) 2008-02-19 2009-08-25 에스엔유 프리시젼 주식회사 Dark field inspection apparatus
JP5198189B2 (en) 2008-08-29 2013-05-15 富士フイルム株式会社 Hard disk inspection device
EP2340148A4 (en) * 2008-09-09 2012-05-02 Univ Cornell Optical grid for high precision and high resolution method of wafer scale nanofabrication
JP5341440B2 (en) 2008-09-10 2013-11-13 株式会社日立ハイテクノロジーズ Inspection device
JP5027775B2 (en) 2008-10-03 2012-09-19 株式会社日立ハイテクノロジーズ Substrate surface shape detection method and apparatus
JP4719284B2 (en) 2008-10-10 2011-07-06 トヨタ自動車株式会社 Surface inspection device
SE533454C2 (en) * 2008-12-18 2010-10-05 Portendo Ab Detection of small amounts of substances
EP2450944A4 (en) * 2009-07-01 2017-12-27 Nikon Corporation Exposure condition setting method and surface inspection apparatus
KR101123638B1 (en) 2009-08-26 2012-03-20 주식회사 케이엔제이 Apparatus for detecting scratch and method adopting the same
JP5282002B2 (en) 2009-09-30 2013-09-04 株式会社日立ハイテクノロジーズ Magnetic disk double-sided defect inspection method and apparatus
JP5321490B2 (en) 2010-02-08 2013-10-23 新日鐵住金株式会社 Particle analysis method
JP2012026862A (en) 2010-07-23 2012-02-09 Konica Minolta Business Technologies Inc Surface inspection device and surface inspection method
JP2012078140A (en) * 2010-09-30 2012-04-19 Hitachi High-Technologies Corp Substrate surface defect inspection method and device thereof
JP5721070B2 (en) 2011-03-08 2015-05-20 国立研究開発法人産業技術総合研究所 Optical property measuring device
US9075934B2 (en) 2011-09-24 2015-07-07 Globalfoundries Inc. Reticle defect correction by second exposure
JP5875812B2 (en) 2011-09-27 2016-03-02 オリンパス株式会社 Microscope system and illumination intensity adjustment method
US9212900B2 (en) 2012-08-11 2015-12-15 Seagate Technology Llc Surface features characterization
US9297751B2 (en) 2012-10-05 2016-03-29 Seagate Technology Llc Chemical characterization of surface features
US9297759B2 (en) 2012-10-05 2016-03-29 Seagate Technology Llc Classification of surface features using fluorescence
US9377394B2 (en) 2012-10-16 2016-06-28 Seagate Technology Llc Distinguishing foreign surface features from native surface features
US20140129179A1 (en) 2012-11-08 2014-05-08 Datacolor, Inc. System and apparatus for multi channel gloss measurements
US9217714B2 (en) 2012-12-06 2015-12-22 Seagate Technology Llc Reflective surfaces for surface features of an article
US9217715B2 (en) 2013-05-30 2015-12-22 Seagate Technology Llc Apparatuses and methods for magnetic features of articles
US9274064B2 (en) 2013-05-30 2016-03-01 Seagate Technology Llc Surface feature manager
US9581554B2 (en) 2013-05-30 2017-02-28 Seagate Technology Llc Photon emitter array
US9201019B2 (en) 2013-05-30 2015-12-01 Seagate Technology Llc Article edge inspection
US9513215B2 (en) 2013-05-30 2016-12-06 Seagate Technology Llc Surface features by azimuthal angle

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5661559A (en) * 1996-03-14 1997-08-26 Phase Metrics, Inc. Optical surface detection for magnetic disks
US6449036B1 (en) * 1997-04-25 2002-09-10 Baumer Optronic Gmbh Sensor unit, process and device for inspecting the surface of an object
US20050280808A1 (en) * 2004-06-16 2005-12-22 Leica Microsystems Semiconductor Gmbh Method and system for inspecting a wafer
US20090323051A1 (en) * 2006-05-17 2009-12-31 Hitachi High-Technologies Corporation Optical inspection method and optical inspection apparatus
US20110141272A1 (en) * 2008-09-30 2011-06-16 Sachio Uto Apparatus and method for inspecting an object surface defect

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2847556A4 *

Also Published As

Publication number Publication date
TWI592652B (en) 2017-07-21
US9036142B2 (en) 2015-05-19
US20130301040A1 (en) 2013-11-14
MY182531A (en) 2021-01-25
CA2872898A1 (en) 2013-11-14
PH12014502486A1 (en) 2015-01-12
KR102093108B1 (en) 2020-03-25
JP6486515B2 (en) 2019-03-20
US20150219569A1 (en) 2015-08-06
EP2847556A4 (en) 2016-01-27
US20160363540A1 (en) 2016-12-15
US9488593B2 (en) 2016-11-08
KR20150008453A (en) 2015-01-22
PH12014502486B1 (en) 2015-01-12
JP2018105877A (en) 2018-07-05
CN104412079B (en) 2018-03-27
CN104412079A (en) 2015-03-11
JP6289450B2 (en) 2018-03-07
JP2015516090A (en) 2015-06-04
SG11201407341TA (en) 2014-12-30
EP2847556A1 (en) 2015-03-18
TW201411119A (en) 2014-03-16
IL235589A0 (en) 2015-01-29

Similar Documents

Publication Publication Date Title
US9766184B2 (en) Surface features characterization
US9488593B2 (en) Surface features mapping
US9863876B2 (en) Reflective surfaces for surface features of an article
US9810633B2 (en) Classification of surface features using fluoresence
US9952151B2 (en) Surface features by azimuthal angle
US9766179B2 (en) Chemical characterization of surface features
US9863892B2 (en) Distinguishing foreign surface features from native surface features
US9201019B2 (en) Article edge inspection

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13787014

Country of ref document: EP

Kind code of ref document: A1

DPE1 Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101)
ENP Entry into the national phase

Ref document number: 2872898

Country of ref document: CA

ENP Entry into the national phase

Ref document number: 2015511681

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 235589

Country of ref document: IL

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20147034291

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 2013787014

Country of ref document: EP