WO2013152310A1 - Architectures laser - Google Patents

Architectures laser Download PDF

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Publication number
WO2013152310A1
WO2013152310A1 PCT/US2013/035485 US2013035485W WO2013152310A1 WO 2013152310 A1 WO2013152310 A1 WO 2013152310A1 US 2013035485 W US2013035485 W US 2013035485W WO 2013152310 A1 WO2013152310 A1 WO 2013152310A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
architecture
doubling
stack
chips
Prior art date
Application number
PCT/US2013/035485
Other languages
English (en)
Inventor
Robert Van Leeuwen
Bing Xu
Qing Wang
Chuni Ghosh
Original Assignee
Reald Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/764,770 external-priority patent/US20130208741A1/en
Application filed by Reald Inc. filed Critical Reald Inc.
Priority to KR1020147030739A priority Critical patent/KR20140140637A/ko
Priority to EP13772122.1A priority patent/EP2834890A4/fr
Priority to RU2014144472A priority patent/RU2014144472A/ru
Priority to CN201380029977.XA priority patent/CN104364984A/zh
Publication of WO2013152310A1 publication Critical patent/WO2013152310A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08054—Passive cavity elements acting on the polarization, e.g. a polarizer for branching or walk-off compensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02438—Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens
    • H01S5/02446—Cooling being separate from the laser chip cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

Abstract

L'invention concerne des architectures destinées à un laser à cavité externe. Dans certains modes de réalisation, le laser à cavité externe comprend des éléments de laser à émission de surface à cavité verticale (VCSEL), une plaque de Brewster, des puces de doublage de fréquence et un réseau de microlentilles. La plaque de Brewster est agencée à un angle par rapport à la trajectoire de la lumière, et est configurée pour polariser au moins la lumière reçue depuis les VCSEL et se propageant sur le trajet de la lumière dans une première direction, et extraire, à partir de la cavité externe, la lumière à fréquence double se propageant sur le trajet de la lumière dans une seconde direction opposée à la première. Les puces de doublage sont utilisables pour recevoir la lumière et doubler la fréquence d'une partie de la lumière reçue. Le réseau de microlentilles est aligné aux éléments VCSEL. Une monture peut être utilisée pour monter la pile latérale de puces de doublage, soit par un montage latéral, soit par un montage par l'extrémité.
PCT/US2013/035485 2012-04-06 2013-04-05 Architectures laser WO2013152310A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020147030739A KR20140140637A (ko) 2012-04-06 2013-04-05 레이저 아키텍처
EP13772122.1A EP2834890A4 (fr) 2012-04-06 2013-04-05 Architectures laser
RU2014144472A RU2014144472A (ru) 2012-04-06 2013-04-05 Лазерные архитектуры
CN201380029977.XA CN104364984A (zh) 2012-04-06 2013-04-05 激光器架构

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201261621067P 2012-04-06 2012-04-06
US61/621,067 2012-04-06
US13/764,770 US20130208741A1 (en) 2012-02-13 2013-02-11 Laser architectures
US13/764,770 2013-02-11

Publications (1)

Publication Number Publication Date
WO2013152310A1 true WO2013152310A1 (fr) 2013-10-10

Family

ID=49301093

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2013/035485 WO2013152310A1 (fr) 2012-04-06 2013-04-05 Architectures laser

Country Status (5)

Country Link
EP (1) EP2834890A4 (fr)
KR (1) KR20140140637A (fr)
CN (1) CN104364984A (fr)
RU (1) RU2014144472A (fr)
WO (1) WO2013152310A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106145021A (zh) * 2015-03-26 2016-11-23 江苏尚飞光电科技有限公司 光学微纳谐振腔结构及其制作方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5164947A (en) * 1991-02-28 1992-11-17 Amoco Corporation Single-frequency, frequency doubled laser
US20040264884A1 (en) * 2003-06-30 2004-12-30 Yue Liu Compact package design for vertical cavity surface emitting laser array to optical fiber cable connection
US20090218514A1 (en) * 2004-12-10 2009-09-03 Koninklijke Philips Electronics, N.V. Multi-spot investigation apparatus
US20100002735A1 (en) * 2008-07-04 2010-01-07 Seiko Epson Corporation Laser source device, wavelength conversion element, method of manufacturing wavelength conversion element, projector, and monitoring device
US20100150186A1 (en) * 2005-07-28 2010-06-17 Matsushita Electric Industrial Co. Ltd Laser light source and display device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5327444A (en) * 1989-04-20 1994-07-05 Massachusetts Institute Of Technology Solid state waveguide lasers
US6370168B1 (en) * 1999-10-20 2002-04-09 Coherent, Inc. Intracavity frequency-converted optically-pumped semiconductor laser
EP1686415A4 (fr) * 2003-11-20 2011-10-05 Nat Inst For Materials Science Element de conversion de longueur d'onde a multi-grille et dispositif de generation de lumiere associe, et element de conversion de longueur d'onde pourvu d'un unique cristal ferroelectrique en colonne et dispositif de generation de lumiere l'utilisant
US7322704B2 (en) * 2004-07-30 2008-01-29 Novalux, Inc. Frequency stabilized vertical extended cavity surface emitting lasers
EP1771767A4 (fr) * 2004-07-30 2009-12-23 Novalux Inc Appareil, systeme, et procede d'affichage de projection
KR20070074749A (ko) * 2006-01-10 2007-07-18 삼성전자주식회사 미러면을 갖는 2차 조화파 발생 결정을 구비하는 외부공진기형 면발광 레이저
US7630125B2 (en) * 2007-12-11 2009-12-08 Young Optics Inc. Laser module

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5164947A (en) * 1991-02-28 1992-11-17 Amoco Corporation Single-frequency, frequency doubled laser
US20040264884A1 (en) * 2003-06-30 2004-12-30 Yue Liu Compact package design for vertical cavity surface emitting laser array to optical fiber cable connection
US20090218514A1 (en) * 2004-12-10 2009-09-03 Koninklijke Philips Electronics, N.V. Multi-spot investigation apparatus
US20100150186A1 (en) * 2005-07-28 2010-06-17 Matsushita Electric Industrial Co. Ltd Laser light source and display device
US20100002735A1 (en) * 2008-07-04 2010-01-07 Seiko Epson Corporation Laser source device, wavelength conversion element, method of manufacturing wavelength conversion element, projector, and monitoring device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2834890A4 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106145021A (zh) * 2015-03-26 2016-11-23 江苏尚飞光电科技有限公司 光学微纳谐振腔结构及其制作方法

Also Published As

Publication number Publication date
RU2014144472A (ru) 2016-05-27
KR20140140637A (ko) 2014-12-09
CN104364984A (zh) 2015-02-18
EP2834890A4 (fr) 2015-12-16
EP2834890A1 (fr) 2015-02-11

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