WO2013110221A1 - Vmos power amplifier cancelling distortion and temperature drift via diode - Google Patents

Vmos power amplifier cancelling distortion and temperature drift via diode Download PDF

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Publication number
WO2013110221A1
WO2013110221A1 PCT/CN2012/070745 CN2012070745W WO2013110221A1 WO 2013110221 A1 WO2013110221 A1 WO 2013110221A1 CN 2012070745 W CN2012070745 W CN 2012070745W WO 2013110221 A1 WO2013110221 A1 WO 2013110221A1
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Prior art keywords
vmos
voltage
complementary
circuit
power amplifier
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PCT/CN2012/070745
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French (fr)
Chinese (zh)
Inventor
胡章儒
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Hu Zhangru
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Priority to CN201280000287.7A priority Critical patent/CN102742154A/en
Priority to PCT/CN2012/070745 priority patent/WO2013110221A1/en
Publication of WO2013110221A1 publication Critical patent/WO2013110221A1/en

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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3217Modifications of amplifiers to reduce non-linear distortion in single ended push-pull amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/181Low-frequency amplifiers, e.g. audio preamplifiers
    • H03F3/183Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3001Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
    • H03F3/301CMOS common drain output SEPP amplifiers

Definitions

  • the present invention describes a VMOS tube audio power amplifier distortion and temperature drift cancellation method.
  • the open loop distortion of the VM0S tube audio power amplifier can be reduced to an extremely low level.
  • Other partial negative feedback techniques can completely make the sound quality of the transistor amplifier to the extent of the tube amp.
  • the invention also has the function of stabilizing the quiescent current of the VMOS tube, so that the quiescent current of the VMOS tube does not change with the temperature rise and fall surface.
  • the sound quality of transistor amplifiers has always been a headache.
  • the instrument has a good index of the crystal tube amplifier, but it sounds harsh and harsh. This is because the instrument's measured index is closed-loop, and the human ear hears the sound of the instantaneous open-loop power amplifier, which is a classic interpretation of transient intermodulation distortion. Then, reducing the open-loop distortion will naturally improve the sound quality, which is already the consensus of the industry. The key is to see how to reduce the open-loop distortion.
  • the method of the present invention provides a way to effectively reduce the open-loop distortion. After the actual hearing test of the prototype, the high and medium tones basically reach the level of the single-ended class A power amplifier, and the bass is far better than the tube amp.
  • Q1 in Figure 1 is the intermediate amplifier stage, and Q3 and Q4 are the complementary output poles of a pair of VMOS transistors.
  • Q2 is a constant current source, and Di and R3 are connected in series to provide a static bias voltage for Q3 and Q4. Since the dynamic resistance of the constant current source and the input resistance of the VMOS transistor are both S, the gain of the intermediate amplifier stage is extremely high, and the range of variation of the operating point is also extremely small. The nonlinear distortion is also extremely small.
  • Figure 2 shows an exponential characteristic plot. This picture can represent a lot of natural phenomena. The characteristic curves of the diode and VMOS tube have similar shapes.
  • the X axis is the voltage and the Y axis is the current.
  • the X axis is the voltage between the G and S poles
  • the Y axis is the current between the D and S poles.
  • this curve is regarded as the characteristic curve of the diode
  • the voltage of the m positive electrode changes from point A to point B, and the current at point B is supposed to be larger, thereby lowering the G-pole voltage of Q3.
  • the G-pole voltage of Q3 is supposed to be smaller and actually not smaller.
  • the distortion of the VMOS tube is that the current at point B becomes smaller
  • the distortion of the diode is that the voltage at point B becomes larger
  • the voltage of this diode becomes larger, which offsets the current that the VMOS tube becomes smaller.
  • the nonlinear distortion of the VMOS tube current is lost. Please note that this is to reduce open loop distortion.
  • the G-pole of the tube is considered to be a very thin layer of conductor, and connected together.
  • the conductive channels of the two complementary VMOS tubes form a PN junction. This PN junction & 3 ⁇ 4 temperature coefficient and the temperature coefficient of the common diode PN junction Just equal.
  • V!. is that the constant current source composed of Q2 uses TL431, and the voltage drop on the E pole of Q2 is fed back to the reference voltage terminal of TL431, and the voltage drop of Q2's BE junction is reduced after being heated.
  • the voltage at the reference voltage of the TL431 increases, the voltage at the output of the TL431 decreases, and the voltage at the B pole of Q2 decreases, suppressing the R2 current [3 ⁇ 4 increase.
  • the principle of the TL431 in suppressing Q2 noise is also similar. It can be seen that this can achieve lower noise, more stable current, better thermal stability, and higher dynamic resistance for the intermediate amplifier stage.
  • a triode is used instead of the position of the TL431 in Fig. 1, and the current stability and noise performance of the transistor Q2 are poor.
  • the unstable surface of the constant current source can easily cause the VMOS tube current to burn out.
  • the existing VMOS tube power amplifier in the circuit that supplies the bias voltage to the VMOS tube, there is no D1, and it is easy to cause the VMOS tube current to be too large and burned. At the same time, the distortion of the VMOS tube is also large.
  • D1 should be close to Q3 or Q4 in the installed position for better thermal coupling. It should be noted that in order to achieve the sound quality of the tube, it is also necessary to: 3 ⁇ 4 into the local negative feedback technique, reduce the gain of each stage, and reduce the negative feedback of the large loop.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Multimedia (AREA)
  • Amplifiers (AREA)

Abstract

Provided is a circuit for cancelling VMOS transistor audio power amplifier distortion and temperature drift, the circuit comprising complementary S-stage outputted VMOS transistor power amplifiers (Q3, Q4); a series circuit with a resistor (R3) and a forward conduction diode (D1) is added between two G-stages; the series circuit is powered by a constant current source (Q2); the voltage drop at the two terminals of the series circuit provides the two complementary VMOS transistors with a static biased voltage between the G-stage and the S-stage; and simultaneously, the constant current source (Q2) is also the loader of an intermediate amplifier stage. The circuit noticeably reduces the open loop distortion of a VMOS transistor audio power amplifier.

Description

通过二极管抵消失真和温漂的 VMOS功放 本发明描述一种 VMOS管音频功放失真和温漂抵消的方法, 使用本发明的方法, 可以把 VM0S管音 频功放的开环失真降到极低, 再配合其它局部负反馈技术, 完全可以把晶体管功放的音质做到电子管功放 的程度。 本发明还具有稳定 VMOS管静态电流的作用, 使得 VMOS管静态电流不会随温度升降面变化。  VMOS power amplifier with diode offset distortion and temperature drift The present invention describes a VMOS tube audio power amplifier distortion and temperature drift cancellation method. By using the method of the invention, the open loop distortion of the VM0S tube audio power amplifier can be reduced to an extremely low level. Other partial negative feedback techniques can completely make the sound quality of the transistor amplifier to the extent of the tube amp. The invention also has the function of stabilizing the quiescent current of the VMOS tube, so that the quiescent current of the VMOS tube does not change with the temperature rise and fall surface.
晶体管功放的音质一直是个令人们头疼的问题.仪器溯得指标很好的晶侔管功放,听起来却失真刺耳。 这是因为仪器测得的指标是闭环的, 而人耳听到的却是瞬间开环的功放放出来的声音, 这是瞬态互调失真 的经典解释。 那么, 降低开环失真自然就能改善音质了, 这点已经是业界的共识。 关键是看怎么降低开环 失真, 本发明的方法就是提供了一种有效降低开环失真的途径。 经过样机实际听感测试, 高、 中音基本达 到电子管单端甲类功放水平, 低音还远好于电子管功放。  The sound quality of transistor amplifiers has always been a headache. The instrument has a good index of the crystal tube amplifier, but it sounds harsh and harsh. This is because the instrument's measured index is closed-loop, and the human ear hears the sound of the instantaneous open-loop power amplifier, which is a classic interpretation of transient intermodulation distortion. Then, reducing the open-loop distortion will naturally improve the sound quality, which is already the consensus of the industry. The key is to see how to reduce the open-loop distortion. The method of the present invention provides a way to effectively reduce the open-loop distortion. After the actual hearing test of the prototype, the high and medium tones basically reach the level of the single-ended class A power amplifier, and the bass is far better than the tube amp.
下面结合附图来说明工作原理。 图 1中的 Q1是中间放大级, Q3和 Q4是一对 VMOS管组成的互补 输出极。 Q2是恒流源, Di和 R3串联给 Q3和 Q4提供静态偏置电压。 由于恒流源的动态电阻和 VMOS 管的输入电阻都很 S, 所以中间放大级的增益极高, 工作点的变化范围也极小. 非线性失真也极小。 图 2 所示的是一种指数特性曲线图。这个图可以表示很多自然现象。二极管 .和 VMOS管的特性曲线图都有类似 的形状。 对于二极管来说, X轴是电压, Y轴是电流; 而对于 VMOS管来说, X轴是 G、 S极间电压, Y 轴是 D、 S极间电流。 如果我们选择合适的坐标参数, 可以使得二极管的特性曲线与 VMOS管的特性曲线 重合! 这就是本发明的理论基础所在。 假设在某一时刻, Q3的 G极电压升高, 如果没有 D1 的存在, 那 么, Q3的电流会作如圏 2所示的非线性变化, 这个非线性变化就是失真 而现在有了: m 的存在, D】 的 正极电压也会升高, 由于恒流源的动态电阻不是无限大, 所以, Di 的电流也会作 ¾图 2所示的非线性变 化, 这个非线性变化同样是失真。 这两个失真是大小相等方向相反. 互相抵销的。 所以, 合成后的输出声 音就没有失 ¾了。 为了说明这个抵销的过程, 在图 2的曲线上取 A、 B , C三点, 假设 Q3的 G极 1电压从 A 点经 B点变化到 C点, 如果从 A点到 C点连结直线的话, 很显然不会经过 B点的, 这就是非线性失真。 这个 B点存在的问题是本该更大的电流 ϊί [[实际没有更大, 也就是说, 应有的输出电流变小了。 同样地, 如 果把这个曲线看成是二极管的特性曲线的话, m正极的电压从 A点经 B点变化到 C点, 这时的 B点电流 本该更大从而拉低 Q3的 G极电压, 在 B点时刻, Q3的 G极电压本该更小 实际没有更小。 这就好了, VMOS管的失真就是在 B点的电流变小了, 二极管的失真就是在 B点的电压变大了, 这个二极管变大了 的电压正好抵消了 VMOS管变小了的电流, 使得 VMOS管电流的非线性失真消失了。 请注意, 这是降低 开环失真。 如果 D1换成两只二极管串连失真就会变得很大, 这是形成过补偿的原因。 这也从另一方面证 实了上面分析的合理性。 本电路的另一个作用是抵消温漂, D〗 压降的负温度系数正好抵消了 Q3., Q4两 K VMOS t; G , S极间电压温度系数。 对于' VMOS管来说, 在小电流状态时, 同样的 G、 S极电压, D、 S极电流会随温度升高而增大。 D1的存在正好能抵消了这个温漂。至于为 么一只二极管能正好抵消两只 VMOS管的温漂,这是由实验确定的。如果要从理论上给与的合理解释,那么只能是:把两只互补型 VMOS 说 明 书 The working principle will be described below with reference to the drawings. Q1 in Figure 1 is the intermediate amplifier stage, and Q3 and Q4 are the complementary output poles of a pair of VMOS transistors. Q2 is a constant current source, and Di and R3 are connected in series to provide a static bias voltage for Q3 and Q4. Since the dynamic resistance of the constant current source and the input resistance of the VMOS transistor are both S, the gain of the intermediate amplifier stage is extremely high, and the range of variation of the operating point is also extremely small. The nonlinear distortion is also extremely small. Figure 2 shows an exponential characteristic plot. This picture can represent a lot of natural phenomena. The characteristic curves of the diode and VMOS tube have similar shapes. For a diode, the X axis is the voltage and the Y axis is the current. For the VMOS tube, the X axis is the voltage between the G and S poles, and the Y axis is the current between the D and S poles. If we choose the appropriate coordinate parameters, we can make the characteristic curve of the diode coincide with the characteristic curve of the VMOS tube! This is the theoretical basis of the present invention. Suppose that at some point, the G-pole voltage of Q3 rises. If there is no D1, then the current of Q3 will change as a nonlinear change as shown in 圏2. This nonlinear change is the distortion and now has: m Exist, the positive voltage of D] will also rise. Since the dynamic resistance of the constant current source is not infinite, the current of Di will also be a nonlinear change as shown in Fig. 2. This nonlinear change is also distortion. These two distortions are equal in magnitude and opposite in direction. Therefore, the synthesized output sound is not lost. To illustrate the process of this offset, take the three points A, B, and C on the curve of Figure 2, assuming that the voltage of G pole 1 of Q3 changes from point A to point B, if the line is connected from point A to point C. If you do, it will obviously not pass through point B. This is nonlinear distortion. The problem with this point B is that the larger current ϊί [[the actual is not bigger, that is, the output current should be smaller. Similarly, if this curve is regarded as the characteristic curve of the diode, the voltage of the m positive electrode changes from point A to point B, and the current at point B is supposed to be larger, thereby lowering the G-pole voltage of Q3. At point B, the G-pole voltage of Q3 is supposed to be smaller and actually not smaller. This is good, the distortion of the VMOS tube is that the current at point B becomes smaller, the distortion of the diode is that the voltage at point B becomes larger, and the voltage of this diode becomes larger, which offsets the current that the VMOS tube becomes smaller. The nonlinear distortion of the VMOS tube current is lost. Please note that this is to reduce open loop distortion. If D1 is replaced by two diodes, the series distortion will become very large, which is the cause of overcompensation. This also confirms the rationality of the above analysis on the other hand. Another function of this circuit is to offset the temperature drift, D = the negative temperature coefficient of the voltage drop exactly offsets Q3., Q4 two K VMOS t ; G, S interelectrode voltage temperature coefficient. For the 'VMOS tube, in the small current state, the same G, S pole voltage, D, S pole current will increase with the temperature rise. The presence of D1 just offsets this temperature drift. As for why a diode can exactly offset the temperature drift of two VMOS tubes, this is determined experimentally. If you want to give a reasonable explanation from the theory, then you can only: put two complementary VMOS Instruction manual
管的 G极看成是极薄层的导体, 且连在一起了, 两只互补型 VMOS管的导电沟道正好构成一个 PN结, 这 个 PN结& ¾温度系数和普通二极管 PN结的温度系数正好相等。 The G-pole of the tube is considered to be a very thin layer of conductor, and connected together. The conductive channels of the two complementary VMOS tubes form a PN junction. This PN junction & 3⁄4 temperature coefficient and the temperature coefficient of the common diode PN junction Just equal.
图 .中的 V!.是 ,由 Q2构成的恒流源使用了 TL431 ,并且 Q2的 E极电 ¾上的压降反馈给 TL431 的参考电压端, Q2的 BE结受热后压降会降低, 导致流过 R2的电流加大, TL431参考电压端的电压也会 加大, TL431的输出端电压会降低, Q2的 B极电压会降ί氐, 抑制了 R2电流 [¾加大。 同样的, TL431在抑 制 Q2噪声过程中的原理也是 ΐ½似的。 由此可见, 这样做可以获得更低的噪声, 更稳定的电流, 更好的热 稳定性, 给中间放大级提供更高的动态电阻。 Π果使用三极管取代 TL431构成恒流源的话, 热稳定性达不 到要求。 如果恒流源不能稳定的话, 那么, 流过 Di和 R3的电流形成的偏置电压就不能稳定, D1的失真 抵消作用就达不到要求。  In the figure, V!. is that the constant current source composed of Q2 uses TL431, and the voltage drop on the E pole of Q2 is fed back to the reference voltage terminal of TL431, and the voltage drop of Q2's BE junction is reduced after being heated. As the current flowing through R2 increases, the voltage at the reference voltage of the TL431 increases, the voltage at the output of the TL431 decreases, and the voltage at the B pole of Q2 decreases, suppressing the R2 current [3⁄4 increase. Similarly, the principle of the TL431 in suppressing Q2 noise is also similar. It can be seen that this can achieve lower noise, more stable current, better thermal stability, and higher dynamic resistance for the intermediate amplifier stage. If a triode is used instead of the TL431 to form a constant current source, the thermal stability is not satisfactory. If the constant current source cannot be stabilized, then the bias voltage formed by the current flowing through Di and R3 cannot be stabilized, and the distortion cancellation effect of D1 is not met.
现有的 VMOS管功放中,使用的是三极管代替在图 1中 TL431的位置,三极管 Q2的电流稳定性和噪 声性能都很差。 使用中 由于恒流源的不稳定面很容易导致 VMOS管电流过大面烧毁。 现有的 VMOS管 功放中, 给 VMOS管提供偏置电压的电路中, 没有 D1的存在, 同样会很容易导致 VMOS管电流过大而 烧毁。 同时, VMOS管的失真也很大。  In the existing VMOS tube power amplifier, a triode is used instead of the position of the TL431 in Fig. 1, and the current stability and noise performance of the transistor Q2 are poor. In use, the unstable surface of the constant current source can easily cause the VMOS tube current to burn out. In the existing VMOS tube power amplifier, in the circuit that supplies the bias voltage to the VMOS tube, there is no D1, and it is easy to cause the VMOS tube current to be too large and burned. At the same time, the distortion of the VMOS tube is also large.
本发明的具体实施就很容易做到了, 都是普通的常用元件。 D1在安装的位置上要紧靠 Q3或 Q4, 以 便得到更好的热藕合。 需要说明的是. 要做到电子管的音质, 还需要: ¾入局部负反馈技术, 降低每一级的 增益, 减少大环路负反馈量。  The specific implementation of the present invention is easy to accomplish and is a common common component. D1 should be close to Q3 or Q4 in the installed position for better thermal coupling. It should be noted that in order to achieve the sound quality of the tube, it is also necessary to: 3⁄4 into the local negative feedback technique, reduce the gain of each stage, and reduce the negative feedback of the large loop.

Claims

权 利 要 求 书 Claims
:ί、 一种 VMOS管功放的失真抵消电路, 其特征是: 互补型 S极输出的 VM0S管功放, 两个 G极之 间加入一只电阻和一只正向导通二极管串联的电路, 串联电路通过恒流源供电, 串联电路两端的压降给两 只互补型 VM0S管提供 G极和 S极间的静态偏置电压, 恒流源同 ^也是中间放大级的负载。 : ί, A distortion cancellation circuit of a VMOS tube power amplifier, characterized in that: a complementary S-pole output VM0S tube power amplifier, a circuit in which a resistor and a forward-conducting diode are connected in series between two G-poles, a series circuit Powered by a constant current source, the voltage drop across the series circuit provides a static bias voltage between the G and S poles for the two complementary VM0S tubes. The constant current source is also the load of the intermediate amplifier stage.
2、 一种 VMOS管功放的温漂抵消电路, 其特征是: 如权利要求 1所述的串联电路, 用一只正向导通 的二极管去抵消两只互补型 VMOS管 G极和 S极间电压的温漂。  2. A temperature drift canceling circuit for a VMOS tube power amplifier, characterized in that: the series circuit of claim 1 uses a forward conducting diode to cancel the voltage between the G and S poles of two complementary VMOS tubes The temperature drift.
3、 如权利要求!所述的恒流源电路, 其特征是: 采用 TL431提供恒定电压, 这个恒定电压给三极管 B极供电, 三极管的 E极连结 TL431的参考电压端, E极回路中接入限流电阻以调节恒流源电流的大小, 三极管的 C极连结 VMOS管的 G极, 另一只互补型 VMOS管 G极连结中间放大级的输出端, 两只互补 型 VMOS管 G极之间接入电阻, 恒流源同时也是中间放大级的负载。  3. As claimed! The constant current source circuit is characterized in that: TL431 is used to provide a constant voltage, and the constant voltage is applied to the B pole of the triode, the E pole of the triode is connected to the reference voltage end of the TL431, and the current limiting resistor is connected in the E pole loop to adjust the constant The current of the current source, the C pole of the triode is connected to the G pole of the VMOS tube, the other complementary VMOS tube G is connected to the output end of the intermediate amplifier stage, and the complementary voltage of the two complementary VMOS tubes is connected to the resistor, the constant current source It is also the load of the intermediate amplification stage.
PCT/CN2012/070745 2012-01-29 2012-01-29 Vmos power amplifier cancelling distortion and temperature drift via diode WO2013110221A1 (en)

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CN201280000287.7A CN102742154A (en) 2012-01-29 2012-01-29 Method for offsetting vmos transistor power amplifier of distortion and temperature drift of diode
PCT/CN2012/070745 WO2013110221A1 (en) 2012-01-29 2012-01-29 Vmos power amplifier cancelling distortion and temperature drift via diode

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CN117420422B (en) * 2023-12-18 2024-06-25 赛英特半导体技术(西安)有限公司 VI source current expansion method, circuit and VI source

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2118377U (en) * 1992-02-24 1992-10-07 徐耀忠 Motion feedback active sound box
CN1677830A (en) * 2004-03-31 2005-10-05 中国科学院电子学研究所 Piezoelectric executor driving power supply
CN2824488Y (en) * 2005-05-11 2006-10-04 何毕军 Integrated apparatus of power amplifier and loudspeaker

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2118377U (en) * 1992-02-24 1992-10-07 徐耀忠 Motion feedback active sound box
CN1677830A (en) * 2004-03-31 2005-10-05 中国科学院电子学研究所 Piezoelectric executor driving power supply
CN2824488Y (en) * 2005-05-11 2006-10-04 何毕军 Integrated apparatus of power amplifier and loudspeaker

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