WO2013102718A1 - Procede de fabrication d'une cellule photovoltaique - Google Patents
Procede de fabrication d'une cellule photovoltaique Download PDFInfo
- Publication number
- WO2013102718A1 WO2013102718A1 PCT/FR2012/052985 FR2012052985W WO2013102718A1 WO 2013102718 A1 WO2013102718 A1 WO 2013102718A1 FR 2012052985 W FR2012052985 W FR 2012052985W WO 2013102718 A1 WO2013102718 A1 WO 2013102718A1
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- Prior art keywords
- substrate
- photovoltaic cell
- manufacturing
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- doped
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 238000007725 thermal activation Methods 0.000 claims abstract description 26
- 239000004065 semiconductor Substances 0.000 claims abstract description 24
- 238000001994 activation Methods 0.000 claims abstract description 15
- 230000004913 activation Effects 0.000 claims abstract description 15
- 239000002019 doping agent Substances 0.000 claims abstract description 9
- 230000005855 radiation Effects 0.000 claims abstract description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 22
- 238000000137 annealing Methods 0.000 claims description 12
- 238000005468 ion implantation Methods 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 125000004437 phosphorous atom Chemical group 0.000 claims description 6
- 230000003213 activating effect Effects 0.000 abstract description 3
- 238000002513 implantation Methods 0.000 description 15
- 229910052796 boron Inorganic materials 0.000 description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 11
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 125000004429 atom Chemical group 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910015845 BBr3 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000009264 composting Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
- H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the invention relates to the field of the manufacture of semiconductor microcomponents comprising two zones doped by implantation of dopants and thermal activations.
- the invention is particularly applicable to photovoltaic cells.
- a photovoltaic cell comprises a semiconductor substrate, usually made of doped silicon, for example doped p, covered on one of its faces, usually the front face intended to receive the radiation, a doped doped layer opposite, for example an n-doped layer, thus forming a pn junction for the collection of photo-carriers generated by the illumination of the cell.
- the layer n is also covered with an antireflection layer to ensure good photon absorption, and electrical contacts are provided in the n layer for the collection of the generated current.
- a highly doped zone of the same type of doping as the substrate, for example a layer called “p + " because of its high concentration of p-type dopants, is produced on the other side of the substrate.
- This zone is usually called “BSF” zone (for the acronym "Back Surface Field”).
- the layer n is for example made by means of a POCI3 gas diffusion step at a temperature of 850 ° -950 ° C. for several tens of minutes, as described, for example, in the document by JCC Tsai, "Shallow Phosphorus Diffusion Profiles". in Silicon ", Proc. of the IEEE 57 (9), 1969, pp. 1499-1506, or by means of an ion implantation of phosphorus atoms, followed by a step of thermal activation of the implanted atoms, as described for example in the document by DL Meier et al, "N-type , ion implanted silicon solar cells and modules ", Proc.
- the "BSF” layer is produced for example by depositing an aluminum-containing screen printing paste on the entire rear face of the substrate.
- Such an “BSF” layer called “Al-BSF”
- Al-BSF is then activated by annealing, for example in a passage oven at a temperature of 885 ° C. and with a belt speed of 6500 mm / min, as this is for example described in B. Sopori et al, "Fundamental mechanisms in the fire-through contact metallization of Si solar cells: a review", 17 th Workshop on Crystalline Silicone Solar Cells & Modules: Materials and Process, Vail, Colorado, USA, August 5-8 2007
- the "Al-BSF” layer poses two problems.
- a commonly employed method is thus to use a boron-based "BSF” layer, commonly referred to as "B-BSF", in place of the "Al-BSF” layer.
- B-BSF boron-based “BSF” layer
- a “B-BSF” layer can be produced in a manner similar to the zone n on the front face of the substrate, for example by means of a gas diffusion of BC1 3 or BBr3 type, but also by means of an implantation of atoms. boron, followed by a step of thermal activation of the implanted atoms.
- a photovoltaic cell using an ion implantation of phosphorus for the n-layer, and an ion implantation of boron for the "B-BSF".
- the problem of such a cell is that the temperatures of the thermal annealing necessary for activation of the implanted atoms are very different for boron and phosphorus.
- temperatures below 850 ° C are required, while boron requires temperatures above 1000 ° C to be activated.
- the two ionic implantations and their respective two thermal anneals are made separately.
- boron is implanted on the rear face of the substrate to obtain the BSF layer, then the assembly thus obtained is annealed at 1000 ° C. Then, the phosphor is implanted on the front face and the assembly obtained is then annealed at 850 ° C., the boron being little or not impacted by this "low temperature" stage. For example, see the aforementioned DL Meier document for more details.
- the implementation of separate implantation and thermal annealing steps has a number of disadvantages.
- the ion implantation steps generally require to be performed under vacuum and in a clean room in order to limit the risks of contamination.
- This separate implementation induced by the incompatibility of the temperature of the thermal activations, therefore involves breaking the vacuum at least once and imposes to multiply the manipulations of the photovoltaic cells during the most critical phases of their manufacture in terms of contamination. .
- thermal annealing at very high temperature (above 1000 ° C as required for the activation of boron) applies to the entire substrate and causes a degradation of the overall volume lifetime of the substrate.
- One of the aims of the present invention is to propose a method of manufacturing a photovoltaic cell having its two faces doped by ion implantation and thermal activation, which minimizes the manufacturing constraints induced by the different thermal activation temperatures, and in particular, which makes it possible not to have totally separate implantations and activations in the event of incompatibility of temperatures.
- Another object of the invention is to provide a method which does not degrade the lifetime of the substrate.
- the subject of the invention is a method of manufacturing a photovoltaic cell consisting of:
- ⁇ to produce a semiconductor substrate having a first opposite face and a second face; ⁇ performing, on the first face of the substrate, a first doped semiconductor zone by implantation of first doping elements in the thickness of the substrate and by thermal activation of the first doping elements implanted at a first activation temperature;
- the substrate has a thickness greater than 50 microns, and at least the thermal activation of the first doping elements is carried out by laser irradiation, the irradiation parameters being chosen so that the radiation is absorbed as much as possible. a depth corresponding to the first micrometer of the substrate.
- the laser irradiation allows an intense and localized temperature rise of the irradiated face (over a depth of the order of the depth of absorption of the radiation in the substrate, that is to say from micrometer order), thereby causing the thermal activation of the doping elements implanted in the irradiated face.
- the irradiation is localized and the substrate dissipates heat, so that the face opposite the irradiated face does not undergo or very little heating. It is thus possible to implant in this other face doping elements without the latter undergo too much heating.
- the thermal activations are carried out once the ion implantation has been completed.
- the ion implantations are performed in the same vacuum chamber, so that the vacuum is not broken between the realization thereof.
- the ionic implantations are not performed prior to the thermal activations.
- the ion implantation of elements can for example be followed directly by their thermal activation.
- the thermal activation of the second doping elements is carried out by thermal annealing.
- this thermal activation can also be carried out by laser irradiation, in particular an irradiation step distinct from the irradiation step activating the first elements.
- the first doping elements are boron atoms
- the second doping elements are phosphorus atoms.
- the laser irradiation of the first face is performed with a pulsed laser whose wavelength is between 150 nm and 600 nm, and whose pfd is between 1 and 7 J / cm 2 with a duration of power of between 10 nanoseconds and 1 microsecond.
- a pulsed laser whose wavelength is between 150 nm and 600 nm, and whose pfd is between 1 and 7 J / cm 2 with a duration of power of between 10 nanoseconds and 1 microsecond.
- the laser irradiation of the first face comprising implanted boron atoms is an irradiation using a pulse fluence laser of the order of 3 J / cm 2 and of duration of the order of 150 nanoseconds.
- a pulse fluence laser of the order of 3 J / cm 2 and of duration of the order of 150 nanoseconds.
- Such laser irradiation makes it possible in particular to obtain a heating greater than 1000 ° C. for the thermal activation of the boron atoms implanted in one of the faces of the substrate.
- the substrate in particular silicon, has a thickness of between 50 micrometers and 300 micrometers, and preferably a thickness of 180 microns.
- the substrate is a p-doped semiconductor substrate, the first semiconductor zone being an n-doped zone, and the second semiconductor zone being a p-doped zone.
- the substrate is an n-doped semiconductor substrate, the first semiconductor zone being an n-doped zone, and the second semiconductor zone being a p-doped zone.
- FIGS. 1 to 6 are schematic sectional views illustrating a method of manufacturing a photovoltaic cell according to the invention.
- a method for manufacturing a photovoltaic cell starts with the production of a p-doped silicon substrate 10 (FIG. 1), with a thickness greater than 50 micrometers, in particular a thickness between 50 micrometers and 300 micrometers, for example 180 micrometers, optionally followed by the chemical texturing of one of its faces, for example by application of a 1% KOH solution at a temperature of 80.degree. min.
- the face 12 is intended to receive the radiation to be converted into current, this face is hereinafter referred to as the "front" face.
- the process is continued by the ion implantation of phosphorus atoms in the front face 12 (FIG. 2), for example a POCI 3 type implantation with an energy of between 5 and 50 keV, for example 30 keV and a dose. between 10 14 at / cm 2 and 6.10 15 at / cm 2 , for example 4.10 15 at / cm 2 or plasma immersion, as is known per se from the state of the art, so as to obtain a zone implanted in phosphorus 14 on the front face 12 of typical thickness less than 100 nanometers. Then, an ion implantation of boron atoms is carried out within the face 16 or "rear" face, opposite to the front face 12 (FIG.
- boron implanted zone 18 on the rear face 16 of a typical thickness of less than 100 nanometers for example an implantation of the BCI 3 or BBr 3 type with an energy included between 5 and 30 keV, for example 10 keV and a dose of between 10 14 at / cm 2 and 5.10 15 at / cm 2 , for example 3.10 15 at / cm 2 or plasma immersion, as is known per se of the state of the art, so as to obtain a boron implanted zone 18 on the rear face 16 of a typical thickness of less than 100 nanometers.
- the ionic implantations of phosphorus and boron are carried out in the same vacuum chamber of an ion implantation device, which makes it possible not to break the vacuum between these two implantations and thus minimizes the risk of contamination.
- the process then continues by irradiating all or part of the rear face 16 with a laser in order to thermally activate and diffuse in depth (typically less than 500 nanometers, for example of the order of 200 nanometers) the boron atoms implanted therein, thus producing a layer "B-BSF" without damaging the front face 12 and the phosphorus atoms therein ( Figure 4).
- the thermal activation of the first elements is advantageously carried out by irradiating the entire face back 16 with a laser allowing such irradiation, especially for a very short time.
- the thermal activation of the backside boron atoms is carried out by means of an excimer laser pulsed at 308 nanometers, having a duration of pulses equal to 150 nanoseconds, pulsed at 200 kHz and of energy density or fluence equal to at 3 J / cm 2 , which makes it possible to reach locally a temperature higher than 1000 ° C.
- the skilled person will be able to adapt the irradiation parameters according to the laser at his disposal, it is sufficient that the radiation is absorbed in a thickness or depth less than one micrometer, and preferably less than 500 or 300 nanometers, and that warming remains of the order of 1000 ° C (and in any case does not deteriorate the material).
- the laser irradiation may be performed with a pulsed laser whose wavelength is between 150 nanometers and 600 nanometers, and whose pfd is between 1 and 7 J / cm 2 with a duration of power between 10 nanoseconds and 1 microsecond and a pulse rate between 1 kHz and 1 GHz.
- the thermal activation of the phosphor atoms implanted in front face 12 is then performed (FIG. 5), preferably by thermal annealing at 840 ° C. in an oxidation tube, or by laser irradiation, or by rapid annealing (or annealing).
- RTP for the English acronym "RAPID THERMAL PROCESSING”
- PECVD Pullasma Enhanced Chemical Vapor Deposition
- a passivation layer 22 is also deposited on the rear face 16, for example a 15 nanometer thick layer of SiN x deposited by PECVD with a frequency of 440 kHz at a temperature of 450 ° C.
- contacts on the front face 24 and contacts on the rear face 26, advantageously made in the form of grids, are formed on the front 12 and rear 16 faces of the cell, and then annealing of said contacts 24, 26 is carried out (FIG. 6).
- screen-printing metallization of the front face is carried out with a silver paste deposited on a mask comprising a network of openings of 70 micrometers with a pitch of 2.1 millimeters
- a metallization of the rear face is carried out with a aluminum paste deposited on a mask comprising openings of 70 micrometers with a pitch of 1 millimeter
- the annealing of the contacts on the front face and on the rear face is carried out in an infrared oven of the Centrotherm type, with a temperature of between 850 and 1050 ° C and at a speed of between 2000 and 6500 mm / min.
- the invention also applies to the production of a standard n-type structure, that is to say comprising p-type emitters on the front face, made by means of a boron implantation followed by a thermal activation. by laser irradiation as described above, and composting a phosphor layer "BSF" implanted on the rear face, obtained by conventional thermal implantation and activation, or conventional implantation and activation by laser irradiation.
- a standard n-type structure that is to say comprising p-type emitters on the front face, made by means of a boron implantation followed by a thermal activation. by laser irradiation as described above, and composting a phosphor layer "BSF" implanted on the rear face, obtained by conventional thermal implantation and activation, or conventional implantation and activation by laser irradiation.
- the method according to the invention also applies to the production of selective emitter on the front face for p-type substrate photovoltaic cells, or to a selective FSF layer in the case of inverted n-type cells), and / or a BSF layer located on the rear face of photovoltaic cells.
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
BR112014015691A BR112014015691A2 (pt) | 2012-01-05 | 2012-12-19 | processo de fabricação de uma célula fotovoltaica |
KR1020147017762A KR20140115306A (ko) | 2012-01-05 | 2012-12-19 | 광전지 제조 프로세스 |
EP12819097.2A EP2801118B1 (fr) | 2012-01-05 | 2012-12-19 | Procédé de fabrication d'une cellule photovoltaïque |
US14/368,637 US20140357009A1 (en) | 2012-01-05 | 2012-12-19 | Process For Manufacturing A Photovoltaic Cell |
JP2014550743A JP2015508573A (ja) | 2012-01-05 | 2012-12-19 | 太陽電池の製造方法 |
CN201280065246.6A CN104115287A (zh) | 2012-01-05 | 2012-12-19 | 光伏电池的制造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1250105A FR2985605B1 (fr) | 2012-01-05 | 2012-01-05 | Procede de fabrication de composant microelectronique |
FR1250105 | 2012-01-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2013102718A1 true WO2013102718A1 (fr) | 2013-07-11 |
Family
ID=47628314
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FR2012/052985 WO2013102718A1 (fr) | 2012-01-05 | 2012-12-19 | Procede de fabrication d'une cellule photovoltaique |
Country Status (8)
Country | Link |
---|---|
US (1) | US20140357009A1 (fr) |
EP (1) | EP2801118B1 (fr) |
JP (1) | JP2015508573A (fr) |
KR (1) | KR20140115306A (fr) |
CN (1) | CN104115287A (fr) |
BR (1) | BR112014015691A2 (fr) |
FR (1) | FR2985605B1 (fr) |
WO (1) | WO2013102718A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3027733A1 (fr) * | 2014-10-27 | 2016-04-29 | Commissariat Energie Atomique | Procede de fabrication d'une cellule photovoltaique |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3103636B1 (fr) * | 2019-11-21 | 2021-12-03 | Commissariat Energie Atomique | Procédé de fabrication d’une cellule photovoltaïque |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090227094A1 (en) * | 2008-03-05 | 2009-09-10 | Nicholas Bateman | Use of chained implants in solar cells |
US20110177652A1 (en) * | 2010-01-20 | 2011-07-21 | Varian Semiconductor Equipment Associates, Inc. | Bifacial solar cell using ion implantation |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE551719T1 (de) * | 2009-12-09 | 2012-04-15 | Abb Technology Ag | Verfahren zur herstellung von halbleiterbauelementen mittels laserglühen zur selektiven aktivierung von implantierten dotiersubstanzen |
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2012
- 2012-01-05 FR FR1250105A patent/FR2985605B1/fr not_active Expired - Fee Related
- 2012-12-19 WO PCT/FR2012/052985 patent/WO2013102718A1/fr active Application Filing
- 2012-12-19 BR BR112014015691A patent/BR112014015691A2/pt not_active IP Right Cessation
- 2012-12-19 CN CN201280065246.6A patent/CN104115287A/zh active Pending
- 2012-12-19 JP JP2014550743A patent/JP2015508573A/ja not_active Withdrawn
- 2012-12-19 EP EP12819097.2A patent/EP2801118B1/fr active Active
- 2012-12-19 US US14/368,637 patent/US20140357009A1/en not_active Abandoned
- 2012-12-19 KR KR1020147017762A patent/KR20140115306A/ko not_active Application Discontinuation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090227094A1 (en) * | 2008-03-05 | 2009-09-10 | Nicholas Bateman | Use of chained implants in solar cells |
US20110177652A1 (en) * | 2010-01-20 | 2011-07-21 | Varian Semiconductor Equipment Associates, Inc. | Bifacial solar cell using ion implantation |
Non-Patent Citations (7)
Title |
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AJEET ROHATGI ET AL: "High-Throughput Ion-Implantation for Low-Cost High-Efficiency Silicon Solar Cells", ENERGY PROCEDIA, vol. 15, 1 January 2012 (2012-01-01), pages 10 - 19, XP055043120, ISSN: 1876-6102, DOI: 10.1016/j.egypro.2012.02.002 * |
B. SOPORI ET AL.: "Fundamental mechanisms in the fire-through contact metallization of Si solar cells: a review", 17 TH WORKSHOP ON CRYSTALLINE SILICON SOLAR CELLS & MODULES: MATERIALS AND PROCESS, 5 August 2007 (2007-08-05) |
D. L. MEIER ET AL.: "N-type, ion implanted silicon solar cells and modules", PROC. 37 TH PVSC, 2011 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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FR3027733A1 (fr) * | 2014-10-27 | 2016-04-29 | Commissariat Energie Atomique | Procede de fabrication d'une cellule photovoltaique |
WO2016066570A1 (fr) | 2014-10-27 | 2016-05-06 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de fabrication d'une cellule photovoltaïque |
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