WO2013096519A1 - Procédé et appareil pour source de plasma de surface (sps) avec accélérateur de plasma à couche anodique - Google Patents

Procédé et appareil pour source de plasma de surface (sps) avec accélérateur de plasma à couche anodique Download PDF

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Publication number
WO2013096519A1
WO2013096519A1 PCT/US2012/070738 US2012070738W WO2013096519A1 WO 2013096519 A1 WO2013096519 A1 WO 2013096519A1 US 2012070738 W US2012070738 W US 2012070738W WO 2013096519 A1 WO2013096519 A1 WO 2013096519A1
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Prior art keywords
sps
plasma
negative
discharge
anode layer
Prior art date
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PCT/US2012/070738
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English (en)
Inventor
Vadim Dudnikov
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Muons, Inc.
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Publication date
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Publication of WO2013096519A1 publication Critical patent/WO2013096519A1/fr

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/54—Plasma accelerators

Definitions

  • the present disclosure is generally related to a plasma generation system for high
  • SPS surface plasma source
  • anode layer plasma accelerator for high current negative ion beam production and for directed deposition by flux of sputtered neutrals and negative ions.
  • SPS Surface Plasma Sources
  • positive ions are generated by a Hall drift plasma accelerator (with an anode layer plasma accelerator, ALPA, or with an insulated channel, with a cylindrical or a race track configuration of emission slit), accelerated in a crossed ExB field and forming a conical ion beam bombarding the target-emitter.
  • Negative ions are extracted from the target surface with geometrical focusing and accelerated by negative voltage applied between emitter and plasma, contacting with the plasma accelerator.
  • the Hall drift ion source has a special design with a space for the passage of emitted negative ions and sputtered particles through the positive ion source.
  • the emission current density of negative ions was increased rapidly from j ⁇ 0.01 A/cm 2 to 3.7 A/cm 2 with a flat cathode and up to 8 A/cm 2 with an optimized geometrical focusing in the long pulse SPS, and up to 1 A/cm 2 in direct current (DC) SPS.
  • the intensity of negative ion beams was increased by cesiation up to 10 4 times from mA to tens of Amperes. Now cesiation is routinely used in SPS for injection of negative ions into accelerators and into large fusion devices.
  • the flux of negative ions emitted from the cathode can be concentrated by a concave focusing surface of the emitter. This geometrical focusing was demonstrated in the SPS with a semiplanotron discharge configuration, as described, for example, in V.
  • a discharge configuration of semiplanotrons is shown, for example, in Figure 1.
  • the discharge in crossed ExB fields is localized in the cathode groove with a mm scale.
  • Positive ions and atoms from the discharge are bombarding the negative surface of the groove initiating a secondary emission of negative ions.
  • These negative ions are accelerated near the cathode potential drop and are focused by the concave surface of the groove to the emission aperture.
  • the plasma density in this discharge can be very high (10 14 cm "3 ).
  • the mean free path of H " ions becomes very small ( ⁇ lmm).
  • LV SPS large volume SPS
  • LBL Lawrence Berkeley Laboratory
  • SC SPS Surface Conversion SPS
  • LV SPSs use hot filaments, RF coils, or microwave discharge and multicusp magnets for plasma production at low gas density, as described, for example, in O. Tarvinen et al., Rev. Sci. Instrum. 79, 02A501 (2008), and J. Sherman et al., AIP Conf. Proc, 763 (2005) 254.
  • LV SPSs have a low power density and can be used for dc operation.
  • the emission current density is only about 20 mA/cm 2 and the brightness is not so high.
  • the negative ion beam intensity in the surface conversion source is limited by negative ion stripping in gas and plasma between the negative ion emitter and the emission aperture. It is important to decrease the gas and plasma thickness with a high intense bombardment of the emitter surface by positive ions and neutrals.
  • Our inventive sputtering/deposition system may be used for high current negative ion beam production and directed deposition by flux of neutrals and negative ions.
  • the main mechanism of negative ion formation in Surface Plasma Sources (SPS) is the secondary emission from a low work function surface, bombarded by a flux of positive ions or neutrals, as described, for example, in Yu. I. Belchenko, G. I. Dimov, and V. G. Dudnikov, Proc. Symp. Production and Neutralization of Negative Hydrogen Ions and Beams, Brookhaven, 1977 (BNL, Upton, NY, 1977), BNL- 50727, p. 79, and Yu.
  • SPS Surface Plasma Sources
  • Negative ions are extracted from the target surface and accelerated by negative voltage applied between emitter and plasma, contacting with a plasma accelerator.
  • the Hall drift ion source has a special design with a space for the passage of emitted negative ions and sputtered particles through the positive ion source. A cross-section of the ion source is shown, for example, in Figure 3.
  • the negative ion source comprises a negative ion emitter (7) and an anode layer plasma accelerator (ALP A) generating a flux of positive ions (6). This negative ion emitter (7) is bombarded by positive ions (6), generating the secondary negative ion beam (10).
  • the anode layer plasma accelerator (ALP A) comprises a magnetic pole (1) serving as a cathode and an anode (2).
  • the anode (2) is supported by anode supports (5) supplying cooling and current.
  • the magnetic field in the emission slit is created by a permanent magnet (3) or coil, a magnetic yoke and magnetic poles-cathodes (1).
  • a working gas is injected into the anode layer plasma accelerator (ALP A) uniformly all along the source.
  • the negative ion emitter (7) has a cylindrical or a spherical emitting surface for the geometrical focusing of the emitted negative ions.
  • a cesium flux is supplied to the negative ion emitter (7) surface to enhance the secondary emission of negative ions.
  • Vd discharge voltage
  • Zc/10 collector current
  • Vc/100 floating potential of collector
  • the slit width is 3 mm and the discharge gap between the cathode and the anode is 3 mm.
  • an emitter material it is possible to use a compound with a low work function such as LaB 6 , for B 2 ⁇ production, compounds of phosphorus with an admixture of metals and lanthanides, and compounds of As, Sb, Ge with lanthanides for the production of clusters of negative ions of P, As, Sb, and Ge, for example.
  • Catalysts with a low ionization potential (such as Cs or Rb) may be deposited onto the emitter surface and/or implanted into the emitter to decrease a surface work function and increase the yield of the secondary emission of negative ions.
  • Our inventive source of negative ions can be used for the production of high currents of negative ions and fast neutrals for directed deposition of thin films into nanostructures with a high aspect ratio and for implantations.
  • Cesium control and diagnostics as described, for example, in V. Dudnikov, P. Chapovsky, and A.
  • Dudnikov, Rev. Sci. Instrum., 81, 02A714 (2010), may be used for SPS operation optimization and stabilization.
  • Uniform sputtering of the emitter with conservation of the focusing properties of the surface of the emitter may be important for long time operation.
  • a device in a particular embodiment, includes means for providing a large volume surface plasma source (SPS) with an anode layer plasma accelerator.
  • the device also includes means for operating the large volume surface plasma source (SPS) with the anode layer plasma accelerator for high current negative ion beam production.
  • the method also includes steps for operating the large volume surface plasma source (SPS) with the anode layer plasma accelerator for high current negative ion beam production.
  • Figure 1 is a diagram illustrating emission characteristics of semiplanotrons with
  • FIG. 1 is a diagram illustrating a simplified conceptual scheme of a surface conversion ion source (SCIS);
  • Figure 3 is a diagram illustrating a simplified conceptual scheme of a surface plasma negative ion source with an anode layer plasma accelerator (ALPA, planar design), where Figure 3a shows a vertical cross-section, and Figure 3b shows a front view;
  • ALPA anode layer plasma accelerator
  • Figure 4 is a diagram illustrating the dependence of discharge and beam characteristics versus gas pressure in the vacuum chamber of the anode layer plasma accelerator (ALPA) source, as described, for example, in V. Dudnikov and A. Westner, Rev. Sci. Instrum. 73, 729 (2002);
  • APA anode layer plasma accelerator
  • FIG. 5 is a diagram illustrating an embodiment of an apparatus including means for providing a large volume surface plasma source (SPS) with an anode layer plasma accelerator and means for operating the large volume surface plasma source (SPS) with the anode layer plasma accelerator for high current negative ion beam production; and
  • SPS large volume surface plasma source
  • FIG. 6 is a flow diagram of an illustrative embodiment of a method including steps for providing a large volume surface plasma source (SPS) with an anode layer plasma accelerator and steps for operating the large volume surface plasma source (SPS) with the anode layer plasma accelerator for high current negative ion beam production.
  • SPS large volume surface plasma source
  • FIG. 1 a diagram illustrating emission characteristics of semiplanotrons with different discharge cell configurations with a 0.5x10 mm 2 slit, where (7) is for a Penning discharge SPS, is depicted and indicated generally, for example, at 100.
  • the emission current density of negative ions was increased rapidly from j ⁇ 0.01 A/cm 2 to 3.7 A/cm 2 with a flat cathode and up to 8 A/cm 2 with an optimized geometrical focusing in the long pulse SPS, and up to 1 A/cm 2 in direct current (DC) SPS.
  • the intensity of negative ion beams was increased by cesiation up to 10 4 times from mA to tens of Amperes. Now cesiation is routinely used in SPS for injection of negative ions into accelerators and into large fusion devices.
  • the flux of negative ions emitted from the cathode can be concentrated by a concave focusing surface of the emitter. This geometrical focusing was demonstrated in the SPS with a semiplanotron discharge configuration, as described, for example, in V.
  • a discharge configuration of semiplanotrons is shown, for example, in Figure 1.
  • the discharge in crossed ExB fields is localized in the cathode groove with a mm scale.
  • Positive ions and atoms from the discharge are bombarding the negative surface of the groove initiating a secondary emission of negative ions.
  • These negative ions are accelerated near the cathode potential drop and are focused by the concave surface of the groove to the emission aperture.
  • the plasma density in this discharge can be very high (10 14 cm "3 ).
  • the mean free path of H " ions becomes very small ( ⁇ lmm).
  • FIG. 2 a diagram illustrating a simplified conceptual scheme of a surface conversion ion source (SCIS) is depicted and indicated generally, for example, at 200.
  • SCIS surface conversion ion source
  • LV SPS large volume SPS
  • LBL Lawrence Berkeley Laboratory
  • SC SPS Surface Conversion SPS
  • LV SPSs use hot filaments, RF coils, or microwave discharge and multicusp magnets for plasma production at low gas density, as described, for example, in O. Tarvinen et al., Rev. Sci. Instrurn. 79, 02A501 (2008), and J. Sherman et al., AIP Conf. Proc, 763 (2005) 254.
  • LV SPSs have a low power density and can be used for dc operation. The emission current density is only about 20 mA/cm 2 and the brightness is not so high.
  • the negative ion beam intensity in the surface conversion source is limited by negative ion stripping in gas and plasma between the negative ion emitter and the emission aperture. It is important to decrease the gas and plasma thickness with a high intense bombardment of the emitter surface by positive ions and neutrals.
  • FIG. 3 a diagram illustrating a simplified conceptual scheme of a surface plasma negative ion source with an anode layer plasma accelerator (ALPA, planar design) is depicted and indicated generally, for example, at 300.
  • Figure 3a shows a vertical cross-section 310
  • Figure 3b shows a front view 320.
  • Our inventive sputtering/deposition system may be used for high current negative ion beam production and directed deposition by flux of neutrals and negative ions.
  • the main mechanism of negative ion formation in Surface Plasma Sources (SPS) is the secondary emission from a low work function surface, bombarded by a flux of positive ions or neutrals, as described, for example, in Yu. I. Belchenko, G. I. Dimov, and V. G. Dudnikov, Proc. Symp. Production and Neutralization of Negative Hydrogen Ions and Beams, Brookhaven, 1977 (BNL, Upton, NY, 1977), BNL- 50727, p. 79, and Yu.
  • SPS Surface Plasma Sources
  • Negative ions are extracted from the target surface and accelerated by negative voltage applied between emitter and plasma, contacting with a plasma accelerator.
  • the Hall drift ion source has a special design with a space for the passage of emitted negative ions and sputtered particles through the positive ion source. A cross-section of the ion source is shown, for example, in Figure 3.
  • the negative ion source comprises a negative ion emitter (7) and an anode layer plasma accelerator (ALPA) generating a flux of positive ions (6).
  • This negative ion emitter (7) is bombarded by positive ions (6), generating the secondary negative ion beam (10).
  • Negative ions are accelerated by voltage applied between the negative ion emitter (7) and the plasma flux (6) and further accelerated by extraction voltage between a suppressor (8) and an extraction electrode (9). The extraction of co-extracted electrons is suppressed by the magnetic field of the suppressor (8).
  • the anode layer plasma accelerator (ALPA) comprises a magnetic pole (1) serving as a cathode and an anode (2).
  • the anode (2) is supported by anode supports (5) supplying cooling and current.
  • the magnetic field in the emission slit is created by a permanent magnet (3) or coil, a magnetic yoke and magnetic poles-cathodes (1).
  • a working gas is injected into the anode layer plasma accelerator (ALPA) uniformly all along the source. Positive ions are formed and accelerated in a discharge with a closed drift of electrons in crossed ExB fields.
  • the negative ion emitter (7) has a cylindrical or a spherical emitting surface for the geometrical focusing of the emitted negative ions.
  • a cesium flux is supplied to the negative ion emitter (7) surface to enhance the secondary emission of negative ions.
  • APA sources anode layer plasma accelerators
  • APA anode layer plasma accelerator
  • Vd discharge voltage
  • kV,10xM discharge current
  • A discharge current
  • /c/10 collector current
  • Vc/100 floating potential of collector
  • the slit width is 3 mm and the discharge gap between the cathode and the anode is 3 mm.
  • an emitter material it is possible to use a compound with a low work function such as LaB 6 , for B 2 ⁇ production, compounds of phosphorus with an admixture of metals and lanthanides, and compounds of As, Sb, Ge with lanthanides for the production of clusters of negative ions of P, As, Sb, and Ge, for example.
  • Catalysts with a low ionization potential (such as Cs or Rb) may be deposited onto the emitter surface and/or implanted into the emitter to decrease a surface work function and increase the yield of the secondary emission of negative ions.
  • Our inventive source of negative ions can be used for the production of high currents of negative ions and fast neutrals for directed deposition of thin films into nanostructures with a high aspect ratio and for implantations.
  • Cesium control and diagnostics as described, for example, in V. Dudnikov, P. Chapovsky, and A.
  • Dudnikov, Rev. Sci. Instrum., 81, 02A714 (2010), may be used for SPS operation optimization and stabilization.
  • Uniform sputtering of the emitter with conservation of the focusing properties of the surface of the emitter may be important for long time operation.
  • the apparatus 500 includes means for providing a large volume surface plasma source (SPS) with an anode layer plasma accelerator 510 and means for operating the large volume surface plasma source (SPS) with the anode layer plasma accelerator for high current negative ion beam
  • SPS large volume surface plasma source
  • FIG. 6 a flow diagram of an illustrative embodiment of a method is depicted and indicated generally, for example, at 600.
  • the method 600 includes steps for providing a large volume surface plasma source (SPS) with an anode layer plasma accelerator 610 and steps for operating the large volume surface plasma source (SPS) with the anode layer plasma accelerator for high current negative ion beam
  • SPS large volume surface plasma source
  • the present invention is well adapted to carry out the objects and attain the ends and advantages mentioned, as well as those that are inherent therein. While the present invention has been depicted, described and is defined by reference to exemplary embodiments of the present invention, such a reference does not imply a limitation of the present invention, and no such limitation is to be inferred. The present invention is capable of considerable modification, alteration, and equivalency in form and function as will occur to those of ordinary skill in the pertinent arts having the benefit of this disclosure. The depicted and described embodiments of the present invention are exemplary only and are not exhaustive of the scope of the present invention.
  • Proposed plasma generation system can be used for high current negative ion beam production and for
  • SPS Surface Plasma Sources
  • positive ions are generated by Hall drift plasma accelerator (with anode layer ALPA or with insulated channel, with cylindrical or race track configuration of emission slit), accelerated in crossed ExB field and forming a conical ion beam bombarding the target-emitter .
  • Negative ions are extracted from the target
  • Hall drift ion source has a special design with a space for passing of emitted negative ions and sputtered particles through the positive ion source.
  • the flux of negative ions emitted from the cathode can be
  • FIG. 1 Emission characteristics of the semiiplanotrons with different two peaks divided by the gap were typically present.
  • the discharge cell configurations with 0.5x10 mm 2 slit (7)is for Penning position of the first low energy peak corresponds to the discharge SPS.
  • Discharge in crossed ExB fields is localized in the expressed in eV.
  • the discharge voltage is concentrated in cathode groove with mm scale. Positive ions and atoms thin layer near the cathode. from discharge are bombarding the negative surface of the
  • This N-shaped emission Proposed sputtering/deposition system for used for high curve was formed due to generation of negative ions on the current negative ion beam production and directed surface near emission slit caused by a flux of fast atoms. deposition by flux of neutrals and negative ions.
  • the main This atomic flux originated from accelerated negative ions mechanism of negative ion formation in Surface Plasma stripped in the plasma.
  • This process increases negative ion Sources (SPS) is the secondary emission from low work emission after the minimum, but the rise was several times function surface, bombarded by a flux of positive ions or slower than in the beginning of emission curves. These neutrals 2 ' 3 .
  • the emitter work function is lowered by compact SPSs have high gas efficiency with pulsed gas introducing a small amount of cesium or other substance valves 13 . with low ionization potential.
  • In the proposed source positive ion are generated by Hall drift plasma accelerator
  • Negative ion beam intensity in the surface conversion Negative ions are accelerated by voltage applied between source is limited by negative ion stripping in gas and emitter (7) and plasma flux (6) and further accelerated by plasma between negative ion emitter and emission extraction voltage between suppressor (8) and extraction aperture. It is important to decrease the gas and plasma electrode (9). The extraction of co-extracted electrons is divergence of a beam is 0.1 rad. With the further increase suppressed by magnetic field of a suppressor (8). Anode of gas flux (to P>1 A mTorr), transition to low voltage layer plasma accelerator is comprised of a magnetic pole mode has been observed. The discharge voltage Vd drops (1) served as cathode and anode (2).
  • the anode is to 0.4 kV, and the discharge current Id jumped to 0.28 A. supported by anode supports (5) supplying cooling and The discharge voltage and discharge current have a weak current.
  • Magnetic field in the emission slit is created by dependence on gas pressure variations in the range 1.4 permanent magnet (3) or coil, magnetic yoke and mTorr ⁇ P ⁇ ,3 mTorr.
  • a working gas is injected operation is most suitable for SOS operation.
  • As emitter into anode layer plasma accelerator uniformly along the all material it is possible to use a compound with a low work the source.
  • Emitter (7) has a cylindrical or spherical emitting surface compounds of As, Sb, Ge with lanthanides for production for the geometrical focusing of emitted negative ion.
  • cesium flux is supplied to the emitter surface to enhance Catalysts with low ionization potential (Such as Cs or Rb) the secondary emission of negative ions.
  • Cs or Rb ionization potential
  • ALPA source are shown in Fig. 4. There are: Vd— 9 V. Dudnikov, Proc. Second Symp. Production and Neutralization of discharge voltage, kV, Id— discharge current, A, Ic— Negative Hydrogen Ions and Beams, Brookhaven, 1980 (BNL,
  • mA collector current
  • Vc floating potential of 10 G.
  • the ion source 17 has a racetrack emission slit of 6 cm long 11 G .
  • G E. Derevyankin and V. G. Dudnikov, Pribory i Techn. Exp. straight parts and 3 cm radius semicircles in the ends. The 30, 523 (1987).
  • the discharge voltage Vd can be 14 K.N. Leung and K.Ehlers, Rev. Sci. Instrum., 53, 803 (1982).

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Particle Accelerators (AREA)

Abstract

Dans un mode de réalisation particulier, l'invention concerne un dispositif comprenant des moyens d'utilisation d'une source de plasma de surface (SPS) de grand volume avec un accélérateur de plasma à couche anodique ; et des moyens de fonctionnement de la source de plasma de surface (SPS) de grand volume avec un accélérateur de plasma à couche anodique pour produire des faisceaux d'ions négatifs à courant élevé. Dans un autre mode de réalisation particulier, un procédé consiste à utiliser une source de plasma de surface (SPS) de grand volume avec un accélérateur de plasma à couche anodique ; et à faire fonctionner la source de plasma de surface (SPS) de grand volume avec un accélérateur de plasma à couche anodique pour produire des faisceaux d'ions négatifs à courant élevé.
PCT/US2012/070738 2011-12-20 2012-12-19 Procédé et appareil pour source de plasma de surface (sps) avec accélérateur de plasma à couche anodique WO2013096519A1 (fr)

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US201161578223P 2011-12-20 2011-12-20
US61/578,223 2011-12-20

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106653557A (zh) * 2016-12-19 2017-05-10 兰州空间技术物理研究所 一种聚焦式阳极层离子源装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU411542A1 (fr) * 1972-03-10 1974-01-15
US20050237000A1 (en) * 2004-04-23 2005-10-27 Zhurin Viacheslav V High-efficient ion source with improved magnetic field
US7622721B2 (en) * 2007-02-09 2009-11-24 Michael Gutkin Focused anode layer ion source with converging and charge compensated beam (falcon)

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU411542A1 (fr) * 1972-03-10 1974-01-15
US20050237000A1 (en) * 2004-04-23 2005-10-27 Zhurin Viacheslav V High-efficient ion source with improved magnetic field
US7622721B2 (en) * 2007-02-09 2009-11-24 Michael Gutkin Focused anode layer ion source with converging and charge compensated beam (falcon)

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
DUDNIKOV VADIM.: "Surface Plasma Source with Anode Layer Plasma Accelerator", 14-TH INTERNATIONAL CONFERENCE OM ION SOURCES, 12 September 2011 (2011-09-12), GEARDINI NAXOS, ITALY *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106653557A (zh) * 2016-12-19 2017-05-10 兰州空间技术物理研究所 一种聚焦式阳极层离子源装置

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