WO2013092286A2 - Cellule de commutation comportant une diode à décharge statique - Google Patents

Cellule de commutation comportant une diode à décharge statique Download PDF

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Publication number
WO2013092286A2
WO2013092286A2 PCT/EP2012/075016 EP2012075016W WO2013092286A2 WO 2013092286 A2 WO2013092286 A2 WO 2013092286A2 EP 2012075016 W EP2012075016 W EP 2012075016W WO 2013092286 A2 WO2013092286 A2 WO 2013092286A2
Authority
WO
WIPO (PCT)
Prior art keywords
transistor
diode
switching
cell
switch
Prior art date
Application number
PCT/EP2012/075016
Other languages
German (de)
English (en)
Other versions
WO2013092286A3 (fr
Inventor
Gisbert Krauter
Armin Ruf
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Publication of WO2013092286A2 publication Critical patent/WO2013092286A2/fr
Publication of WO2013092286A3 publication Critical patent/WO2013092286A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • H02M3/1588—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load comprising at least one synchronous rectifier element
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0048—Circuits or arrangements for reducing losses
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Definitions

  • the present invention relates to a switching cell for a voltage converter, a single-quadrant controller and a commutation cell.
  • Self-guided power electronic actuators typically include at least one commutation cell consisting of a controllable semiconductor switch (e.g., bipolar transistor, MOSFET, IGBT, GTO, etc.) and a diode connected in series therewith.
  • the diode and the semiconductor switch of a commutation cell are connected in such a way that via the common connection, ie the node, either a positive or a negative
  • Figure 1 a shows a first controllable semiconductor switch S1 and a diode D2, which are arranged so that they are arranged in their respective flow direction to each other.
  • a positive input voltage which is applied across the series circuit
  • a current in a first direction between the switch S1 and the diode D2 can be tapped (see arrow).
  • the switch S1 is flowed through in the forward direction of the current, while the diode D2 is applied in the reverse direction with voltage.
  • a negative input voltage which is applied across the series circuit, the switch S1 is blocked, while the diode D2 is flowed through in the forward direction.
  • Figure 1 b shows a diode D1 and a switch S2, which are connected in terms of their flow direction in opposite directions to each other. Thus, only a current can flow via the tap located between them, which current flows into the two-terminal formed by the diode D1 and the switch S2.
  • the statements made in connection with FIG. 1 a apply correspondingly.
  • An application for such a commutation cell is, for example, a single-quadrant which can be configured as a step-down, step-up or blocking device or as a Cuk, ETA or SEPIC converter, etc.
  • half-bridges eg two quadrant drives with current reversal
  • the present invention solves the above object by a switching cell for a voltage converter with the features of claim 1.
  • such a switching cell comprises a diode and a switch connected in parallel with the diode.
  • the switch is set up,
  • the switch can be set up to be able to block power either in a first or in a second direction.
  • the switch is a two-terminal, whose forward direction in response to a
  • Control signal is reversible.
  • the switch is constructed using a first transistor and a second transistor, wherein the first transistor and the second transistor are connected in series and each capable of, in response to a respective control signal in mutually opposite directions to prevent current flow, with In other words, in response to a respective control signal to the first or the second transistor locks the first transistor or the second transistor current flow in a respective direction, wherein the directions are different.
  • the base or the gate terminals of the first and the second transistor can be used to supply a corresponding control signal, while the two
  • Transistors are connected in series with respect to their collectors and emitter or source terminals and drain terminals.
  • MOSFET Metal oxide layer field effect transistors
  • Normal operating direction of the transistor is oriented.
  • the first transistor may allow flow counter to the direction of flow through its inherent diode.
  • the second transistor If the transistors are not designed as field-effect transistors, the respective
  • source corresponds to the emitter and drain to the collector.
  • the single quadrant comprises a switch cell as described above.
  • the single-quadrant controller comprises a further transistor connected in series with the switching cell and can also include an energy storage.
  • the energy store can be
  • the second connection of the energy store can be connected to an output terminal of the single quadrant controller or the
  • the further transistor of the quadrant controller can as
  • Field effect transistor or be designed as a metal oxide field effect transistor (MOSFET), whereby a parallel-connected, with their flow direction in the reverse direction of the transistor oriented diode must not be provided as a separate component.
  • MOSFET metal oxide field effect transistor
  • the inherent diode of the field effect transistor can be used to prevent a current flow against the direction of flow (or flow).
  • Commutation cell proposed which comprises a switching cell discussed above and a second switch.
  • the second switch is connected in series with the switch cell and comprises two series-connected
  • the field-effect transistors of the second switch are, as explained in connection with the switch cell, oriented opposite to one another in terms of their flow directions.
  • the commutation cell according to the invention comprises two switching cells connected in series, as described above, wherein, in the case of a switching cell, the parallel-connected diode can theoretically be dispensed with.
  • the diode connected in parallel is both
  • Switching cells provided in order to further improve the efficiency of the commutation cell.
  • the transistors of one switching cell can be connected to one another via their source connections, and the transistors of the second switch (or of the second switching cell) can be connected to one another via their drain connections be connected.
  • the transistors of the one switching cell can be connected to one another via their drain terminals and the transistors of the second switch (or of the second switching cell) can be connected to one another via their source connections.
  • the respective diodes of the switching cell which are arranged parallel to the switches of the respective switching cell
  • the two switch cells are actually connected in series rather than oppositely in series.
  • Switching cells whose respective structure has been described above. Furthermore, an electrical energy store is provided in the voltage converter, wherein the electrical energy store is connected with its one terminal to the node between the two switch cells. A second connection of the energy accumulator is connected to the output terminal of the voltage converter or itself forms a tap for a
  • a filter can be provided for smoothing the output signal of the voltage converter.
  • two transistors connected in series which form a switch within one of the aforementioned inventive circuits, may each have different blocking voltages.
  • the first and the second transistor of a switching cell are arranged to receive voltages of different levels in the reverse direction in comparison to one another.
  • the amount of lower reverse voltage can in particular to the
  • Blocking capacity of the transistor blocking in the direction of flow of the diode from this forward voltage is not further relevant and this transistor can thus be optimized in terms of it incurred in switching losses.
  • FIG. 1 a shows a commutation cell according to the prior art
  • FIG. 1b shows a further embodiment of a commutation cell
  • FIG. 2 shows a parallel interconnection (half-bridge) of the commutation cells shown in FIG. 1 a and FIG. 1 b,
  • FIG. 3 shows a switching cell according to an embodiment of the
  • FIG. 4b shows a single-quadrant controller according to an exemplary embodiment of the present invention
  • FIG. 5a shows a commutation cell according to the prior art
  • FIG. 5b shows an embodiment of a commutation cell according to the present invention
  • FIG. 6a shows a voltage converter with filter according to the prior art
  • FIG. 6b shows a voltage converter with a filter according to FIG.
  • FIG. 7 shows a voltage converter (two-quadrant controller) according to FIG.
  • FIGS. 7a to 7d show switching states of the voltage converter shown in FIG. 7 with a positive inductor current in the coil L1, 7e shows a circuit state overview of the transistors T1 to T4 in the
  • FIGS. 8a to 8d show switching states of the circuit shown in FIG.
  • FIGS. 8a to 8d with negative inductor current in L1
  • FIG. 9 shows a circuit state overview of the transistors T1 to T4
  • FIG. 3 shows an embodiment of a switching cell 1 according to the present invention, in which a first transistor T1 and a second transistor T2 are connected in anti-parallel to each other in series.
  • the transistors T1, T2 have inherent diodes DI, which are to be understood as lying within the transistor, provided that the transistors are designed as field-effect transistors. Accordingly, the first transistor T1 has a first inherent diode DM and the second transistor T2 has a second inherent diode DI2.
  • the inherent diodes DM and DI2 are oriented opposite to each other.
  • a diode D1 is arranged, whose flow direction coincides with the forward direction of the second transistor T2.
  • a current flow due to the inherent diode DM can be prevented when the first transistor T1 is blocked by the second transistor T2 also being off. Its inherent diode DI2 leaves one
  • the current is passed through the parallel diode D1.
  • This can be embodied, for example, as a so-called “fast diode”, which has lower switching losses than the inherent diodes of a field-effect transistor, thus making it possible for the current to be generated with the aid of the transistor T1 to conduct until a commutation, ie a change in the direction of current flow, pending and shortly before the commutation to pass the current to the diode D1.
  • the losses on the diode D1 can be reduced to pure switching losses, since during static conduction the parallel switch formed by the series-connected transistors T1, T2 takes over the current conduction.
  • the first transistor T1 and the second transistor T2 are connected to each other via their source terminals, the parallel switching diode D1 is oriented so that its cathode is connected to the drain terminal of the first transistor T1. Its anode is connected to the drain terminal of the second transistor T2.
  • the two transistors could be interconnected via their two drain terminals and the cathode of the switching diode D1 connected to the source terminal of T2 and its anode connected to the source terminal of T1. Since the second transistor T2 must block the maximum forward voltage of the diode D1, a transistor with a correspondingly low blocking voltage can be used for the second transistor T2.
  • FIG. 4 a shows a single-quadrant controller according to the prior art.
  • a transistor T In an upper first branch is a transistor T with a collector between and
  • Emitter arranged in parallel diode D arranged.
  • the direction of flow of the diode D is oriented counter to the forward operating direction of the transistor.
  • a second diode D2 is arranged, whose flow direction is oriented in the direction of the first branch.
  • a terminal of a coil L1 is connected as an energy store, whose second terminal is connected to an output 6 of the
  • FIG. 4b shows an embodiment according to the invention
  • the diode D2 is by an inventive
  • Flow directions or blocking directions are oriented opposite to each other, which is apparent inter alia on the basis of the opposite orientations of the inherent diodes DI3, DI4 to each other.
  • the inventive An embodiment of a single-quadrant actuator can reduce the conduction losses or leakage losses within the diode D 2 by removing the one from the
  • Transistors T3, T4 switch is always turned on, if (according to the prior art) the diode D2 would conduct the current.
  • FIG. 5a shows a series connection of two switching cells according to the prior art, which are connected in series with one another.
  • Each of the switching cells consists of a transistor T1 or transistor T3, to which a respective diode DT1 and DT2 is connected in anti-parallel.
  • the flow direction of the respective parallel diode is also opposite to
  • Figure 5b shows an embodiment of an inventive
  • the commutation cell 3 consists of two series-connected switching cells, as shown in Figure 3 and in
  • FIG. 6 a shows a voltage converter 4 (see FIG. 5 a) with a filter according to a known embodiment.
  • parallel to the transistor T3 are connected in series a coil L1 as energy storage and a capacitor C.
  • Parallel to the capacitance C the output 6 of the circuit is arranged.
  • the series connection of the first transistor T1 and the second transistor T3 is arranged parallel to the input 5 of the voltage converter.
  • FIG. 6b shows a voltage converter 4 with a filter according to FIG.
  • Embodiment of the present invention a coil L1 as energy storage and a capacitor C are connected in parallel with the diode D2 in series. Parallel to the capacitance C, the output 6 of the circuit is arranged. Above the first switch (comprising T1 and T2) and the second switch (comprising T3 and T4), the input 5 of the voltage converter is arranged.
  • FIG. 7 shows a voltage converter 4 according to an embodiment of the present invention, as shown in Figure 6b, but no Capacitance C is provided as an output filter.
  • FIGS. 7a to 7d the mode of operation is explained below on the basis of individual switching states, as illustrated in the diagram according to FIG. 7e.
  • Figure 7a shows a switching state A at positive current through the
  • Transistors T1 and T2 turned on and transistor T3 blocks. Therefore, the state of the transistor T4 is not relevant. The current flow takes place via the two transistors T1 and T2 and the coil L1 and the output of the circuit. 6
  • FIG. 7b shows the switching states B1 and F with a positive current through the energy store L1. These states only occur if the control logic does not know the direction of the current through the energy store L1 (for example in the case of a quadrant operation, see also FIG.
  • the transistor T1 is still conducting, while transistor T2 and transistor T3 are blocking. Accordingly, the current flows through transistor T2 through its inherent diode DI2.
  • FIG. 7c shows the switching states B2, C, E1 and E2.
  • the transistors T1 and T4 block, causing the coil L1 draws the current through the diode D2.
  • Switching state E1 opens transistor T3, but a current flow is still blocked by T4.
  • both the transistor T3 and the transistor T4 is turned on in Figure 7d. This corresponds to switching state D.
  • FIG. 8a shows a switching state A with a negative inductor current through the coil L1.
  • Transistors T1 and T2 are turned on while transistor T3 is off. The current flow takes place via the two transistors T1 and T2 and the coil L1 and the output 6 of the circuit.
  • FIG. 8b shows the circuit states B1, B2, E2 and F in which the
  • circuit states B1 and F open transistor T1, a current flow therethrough remains blocked by transistor T2.
  • Figure 8c shows the circuit states C and E1, in which transistor T1 blocks and transistor T3 opens, so that the current flow through the transistor T3 and the inherent diode DI4 of the transistor T4 is passed.
  • FIG. 8 d shows switching state D in the case of a negative inductor current, in which case the transistor T1 blocks and the current flow takes place via the transistors T3 and T4 as well as the coil L1 and the output 6 of the circuit.
  • Figure 7e shows the switching sequence as may be used in the case where the control of the circuit can distinguish a positive and a negative current in the coil L1 (e.g., one quadrant operation). For a positive current flow through the coil L1, that shown in Figure 7e
  • Sequence consisting of the switching states A, B2, C, D, E1 and E2 can be used. Accordingly, for negative current flow through the coil L1, the switching sequence shown in FIG. 8e, comprising the switching states A, B1, B2, D, E2 and F, can be used. If detection of the current direction by L1 is not possible, the combined switching sequence shown in FIG. 9, comprising the steps A, B1, B2, C, D, E1, E2 and F, can be used.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)

Abstract

La présente invention concerne une cellule de commutation (1) destinée à un convertisseur de tension (4) et un convertisseur monoquadrant (2), une cellule de couplage (3) et un convertisseur de tension (4), ceux-ci comprenant une diode (D1) et un commutateur connecté en parallèle de la diode (D1), le commutateur étant agencé pour pouvoir faire passer le courant soit dans un premier, soit dans un second sens. Le commutateur comprend un premier transistor (T1) et un deuxième transistor (T2), le premier transistor (T1) et le deuxième transistor (T2) étant connectés en série et étant en mesure d'empêcher le passage de courant dans des sens opposés entre eux.
PCT/EP2012/075016 2011-12-22 2012-12-11 Cellule de commutation comportant une diode à décharge statique WO2013092286A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011089679A DE102011089679A1 (de) 2011-12-22 2011-12-22 Kommutierungszelle mit statisch entlasteter Diode
DE102011089679.1 2011-12-22

Publications (2)

Publication Number Publication Date
WO2013092286A2 true WO2013092286A2 (fr) 2013-06-27
WO2013092286A3 WO2013092286A3 (fr) 2013-08-15

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Application Number Title Priority Date Filing Date
PCT/EP2012/075016 WO2013092286A2 (fr) 2011-12-22 2012-12-11 Cellule de commutation comportant une diode à décharge statique

Country Status (2)

Country Link
DE (1) DE102011089679A1 (fr)
WO (1) WO2013092286A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109257031A (zh) * 2018-08-01 2019-01-22 电子科技大学 一种基于多mos管串联的精确幅度高压方波产生电路

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Publication number Priority date Publication date Assignee Title
DE102016105493B4 (de) 2016-03-23 2021-06-17 Hkr Automotive Gmbh Leistungszufuhr-Steuerungsvorrichtung

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US6603675B1 (en) * 2002-01-17 2003-08-05 Abb Ab Apparatus and a method for voltage conversion
GB2421365B (en) * 2004-12-16 2007-12-27 Alstom Matrix converters
DE102006019471B3 (de) * 2006-04-26 2007-12-20 Siemens Ag Österreich Synchrongleichrichter-Schaltung und Verfahren zum Betrieb der Synchrongleichrichter-Schaltung
JP5317413B2 (ja) * 2007-02-06 2013-10-16 株式会社東芝 半導体スイッチおよび当該半導体スイッチを適用した電力変換装置
JP5009680B2 (ja) * 2007-05-16 2012-08-22 三菱電機株式会社 開閉装置
EP2421140B1 (fr) * 2009-04-15 2018-07-18 Mitsubishi Electric Corporation Dispositif onduleur, dispositif d'entraînement de moteur électrique, dispositif de conditionnement d'air/réfrigération et système de génération de puissance électrique

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109257031A (zh) * 2018-08-01 2019-01-22 电子科技大学 一种基于多mos管串联的精确幅度高压方波产生电路
CN109257031B (zh) * 2018-08-01 2021-03-30 电子科技大学 一种基于多mos管串联的精确幅度高压方波产生电路

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Publication number Publication date
DE102011089679A1 (de) 2013-06-27
WO2013092286A3 (fr) 2013-08-15

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