WO2013087071A1 - Procédé de gravure lisse unilatérale d'un substrat silicium - Google Patents

Procédé de gravure lisse unilatérale d'un substrat silicium Download PDF

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Publication number
WO2013087071A1
WO2013087071A1 PCT/DE2012/100380 DE2012100380W WO2013087071A1 WO 2013087071 A1 WO2013087071 A1 WO 2013087071A1 DE 2012100380 W DE2012100380 W DE 2012100380W WO 2013087071 A1 WO2013087071 A1 WO 2013087071A1
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WO
WIPO (PCT)
Prior art keywords
silicon substrate
silicate glass
layer
solar cell
silicon
Prior art date
Application number
PCT/DE2012/100380
Other languages
German (de)
English (en)
Inventor
Katrin Weise
Cornelia Klein
Original Assignee
Rena Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rena Gmbh filed Critical Rena Gmbh
Publication of WO2013087071A1 publication Critical patent/WO2013087071A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a method for one-sided smooth etching of a silicon substrate.
  • the production of modern solar cell types requires the smoothest possible backside of a silicon substrate used as a solar cell substrate.
  • a silicon substrate used as a solar cell substrate.
  • large or silicon substrate is to be understood, which usually averted incident light during operation of the fin- ished solar cell is ranked ⁇ .
  • Possible smooth backs allow a re ⁇ production of recombination of generated charge carriers at the back of the silicon substrate or solar cells.
  • efficiency increases of up to 1% can be achieved.
  • the smoothing textured backs of solar cell substrates can cause significant increases in efficiency.
  • the backside of silicon substrates is smooth etched by means of an acidic polish etching solution.
  • an acidic polish etching solution entails undesirable side effects or is not possible. This is in particular ⁇ sondere due to the fact that in etching the back other areas of the solar cell substrate can be attacked by means of an acidic Politurisers.
  • an acidic polish etch solution can be used in many cases only prior to formation of emitter doping. This is but not compatible with all solar cell manufacturing processes.
  • the present invention has for its object, a versatile method for a smooth etching free ⁇ side of a silicon substrate to provide.
  • the method according to the invention for the single-sided smooth etching of a silicon substrate provides for forming a protective layer at least on a first side of the silicon substrate. Subsequently, a second side of the silicon substrate is smooth etched with ⁇ means of an alkaline etching solution, the temperature in the range between 50 ° C and 90 ° C has. During this Glattsleyens those areas of the Siliziumsub ⁇ strats, which has been formed on the protective layer are protected by the protective layer against an action of the etching solution.
  • a smooth etching free in the sense of the present invention is meant an at least partial flattening of a surface of Silizi ⁇ umsubstrats.
  • the smooth etching means at least partially leveling the surface of the silicon substrate.
  • the first side of the second side is opposite .
  • it is at the first side to a front side and the second side to a back print ⁇ te a solar cell substrate.
  • the rear side is understood to mean that side of the solar cell substrate which, when operating the finished solar cell, is arranged facing away from incident light.
  • the front side is the side of the solar cell substrate which incident light is aligned supplied ⁇ Wandt during operation of the finished solar cell.
  • the silicon substrate may be partially or completely immersed in the etching solution.
  • the Glatt2011 ⁇ zen can advertising realized by means of a one-sided etching method to, for example, by only the second side is wetted by the etching solution, the silicon substrate ⁇ net such angeord, the first side of the silicon substrate, however, the upper ⁇ half a liquid level of the etching solution located.
  • Several silicon substrates can be stacked or continuously smoothed. be etched. The method is therefore compatible with Batch ar ⁇ beitenden systems as well as with continuous manufacturing lines.
  • a silicate glass layer or a silicon nitride layer is formed as a protective layer.
  • the protective layer can be formed with technologies known from solar cell manufacturing.
  • phosphorosilicate glass layers and borosilicate glass layers have proven to be useful as a protective layer.
  • a solar cell substrate is a ⁇ trafgelegit side and forms a protective layer in a Emit ⁇ terdiffusion a dopant-silicate glass layer excluded.
  • the protective layer can be formed inexpensively in the context of an emitter diffusion step which is required anyway for the solar cell production.
  • do ⁇ animal-containing silicate glass layer in particular a phosphorus silicate glass layer or a borosilicate glass have proven layer.
  • the emitter diffusion can be realized in any fundamental in itself be ⁇ knew Art. It can unilateral or multilateral ⁇ side emitter diffusion processes are used. In particular, tube diffusion has proven itself. Will be ⁇ forms within the emitter diffusion, for example if it is carried out as tubes ⁇ diffusion on the second side of the Silizi ⁇ umsubstrats the dopant-silicate glass layer, it will be advantageously removed prior to smooth etching free. This can be achieved, for example, by means of a one-sided etching process known per se, in particular using weakly concentrated hydrofluoric acid solutions.
  • the dopant-containing silicate glass layer from the second side of the silicon substrate in the context of a Kan- tenisolations suitses removed.
  • edge isolation step a process step is commonly referred to, wherein the surface is electrically insulated on the second side of the silicon substrate by the Emit ⁇ terdot mich.
  • the emitter doping can be etched away from the second side of the silicon substrate beispielswei ⁇ se, so that in the course of this etching, the do animal-containing silicate glass layer can be cost-effectively removed from the second side of the silicon substrate.
  • the dopant-containing silicate glass layer formed as part of the emitter diffusion is removed from the second side of the silicon substrate by wet-chemical etching.
  • this is done by means of a silicon katglasvon zates first type containing water, 10 grams per liter (g / 1) to 50 g / 1 hydrofluoric acid, 200 g / 1 to 1000 g / 1 swiveling ⁇ ric acid and / or 250 g / 1 to 500 g / 1 nitric acid.
  • the dopant-containing silicate glass layer formed on the first side is removed from the first side of the silicon substrate by means of a second-type silicate glassate, thereby over-etching the second side of the silicon substrate by means of the second-type silicate glassyzate.
  • any structures remaining on the second side of the silicon substrate after the smooth-etching process can be further extended. be leveled. Remaining edges can be rounded off.
  • Silikatglastechnik zates second type an aqueous solution has been proven, which has hydrofluoric acid and nitric acid.
  • a silicon nitride layer is formed on the first side of the silicon substrate as a protective layer ⁇ .
  • This silicon nitride layer is subsequently left as an antireflection layer on the silicon substrate.
  • the production of a solar cell requires the formation ei ⁇ nes emitter.
  • an emitter diffusion is therefore carried out prior to the formation of the silicon nitride layer, and in this case a dopant-containing silicate glass layer is formed on the silicon substrate.
  • This dotierstoffhalt strength Sili ⁇ katglas für is completely removed prior to forming the silicon nitride layer ⁇ .
  • the silicon nitride layer provided as a protective layer can be left as an antireflection layer on the silicon substrate.
  • the do- animal-containing silicate glass layer is preferably removed nassche ⁇ mixed, for example with the Silikatglastechnik zates second type.
  • a possible edge isolation as zaims above in the context of the Silikatglastechnik first kind described, is preferably carried out also before the formation of the Si liziumnitrid für.
  • a variant of the method provides that the silicon substrate is at least partially provided with egg ⁇ ner surface texture prior to forming the protective layer.
  • the surface texture is formed on the first and second sides of the silicon substrate.
  • the Sili ⁇ ziumsubstrats formed constituents of the surface texture are then during the subsequent GlattiserensLeeb ⁇ net.
  • the surface texture is preferably formed by wet-chemical texture etching.
  • the second side of the silicon substrate is smooth-etched by means of an aqueous KOH solution.
  • an aqueous KOH solution Particularly be ⁇ lasts an aqueous KOH solution having a KOH concentration of 10 weight percent to 30 weight percent has.
  • the second side of the silicon substrate is preferredbahgehartt using an alkaline etching solution having a tempera ture ⁇ in the range between 70 ° C and 85 ° C.
  • This Tempe ⁇ ratur Scheme has proven itself in practice especially.
  • the inventive method can be before ⁇ geous, used in the manufacture of a solar cell having a passivated ⁇ fourth back or in the manufacture of a solar cell with a passivated emitter and passivated back, a so-called PERC cell.
  • a passivated emitter are electrically passivated surface states in the emitter region, under a passivated back passivated surface states on the back of So ⁇ larzelle to understand.
  • Ele ⁇ elements the same effect by the same reference numerals.
  • the invention is not limited to thetientsbeispie ⁇ le shown in the figures - not even in terms of functional features.
  • the previous description as well as the following figures ⁇ description contain numerous features that are shown in the dependent subclaims partially summarized in several. However, those features, as well as all the other features disclosed above and in the following description of the figures, will also be considered individually by one skilled in the art and put together to meaningful further combinations. In particular, these features are combined in each case individually and in any geeigne ⁇ ter combination with the method of the independent claim. Show it:
  • Figure 1 Schematic representation of a first embodiment of the method according to the invention
  • Figure 2 is a schematic diagram of a second embodiment of the method according to the invention.
  • FIG. 3 Schematic representation of a method according to
  • FIG. 4 Schematic representation of the method according to
  • FIGS. 1 and 3 illustrate a first conspiracysbei ⁇ game of the method according to the invention.
  • a silicon solar cell substrate is to ⁇ next 50 texturgelegit 10. Since ⁇ at a WEI in the illustrations of Figure 3 upwards, the remaining surface areas of the silicon solar cell substrate are also provided with the surface texture 51.
  • the front side of the silicon solar cell substrate 50 is provided with a surface texture 51 as well as a back side of the silicon solar cell substrate 50 facing down in the illustrations of FIG. In the representations of FIGS. 3 and 4, for the sake of clarity, however, a representation of the surface texture 51 is dispensed with at the edges of the silicon solar cell substrate 50.
  • the Textuiller- zen 10 of the silicon solar cell substrate 50 is carried vorzugswei ⁇ se by means of a wet chemical Texturteilling.
  • a tube emitter diffusion 12 is performed. This is to be understood as a tube diffusion in which an emitter doping 52 is formed. This is in the
  • a dopant-containing silicate glass layer 54 is as well as tube emitter diffusion. This is preferably a phosphosilicate glass layer or a borosilicate glass layer.
  • the dopant-Si ⁇ likatglas für 58 is removed 14 from the back side of the silicon solar cells ⁇ substrate 50. This can for example take place by means egg ner Silikatglastechnik zates second kind. In other areas, the dopant-containing silicate glass layer 54 remains on the silicon solar cell substrate 50 and serves as a protective ⁇ layer against a subsequent smooth etching 16.
  • This smooth etching 16 is carried out in an aqueous KOH solution, which at a temperature in the range of 70 ° C to 85 ° C. located.
  • Siliziumso ⁇ larzellensubstrat 50 can be completely immersed in the aqueous KOH solution.
  • the upper Surface texture 51 on the back of the silicon solar cell Sub ⁇ strats 50 leveled by the isotropic etching of the KOH solution located at said temperature.
  • the silicon solar cell substrate 50 is protected by the dopant-containing silicate glass layer 54 from an action of the KOH solution, so that the surface texture 51 is retained.
  • remaining parts of the dopant-containing silicate glass layer 54 are removed 18. This can be done for example by means of a Silikatsleys second type.
  • the backside of the silicon solar cell substrate 50 is etched over ⁇ , which in the case of not fullymaschineebne- th surface on the back of Siliziumsolarzellensub ⁇ strats 50 it can be leveled going on.
  • a silicon solar cell substrate 50 provided with an emitter doping 52 remains, which has a surface texture 51 on its front side and whose rear side is leveled.
  • This silicon solar cell substrate 50 can now be further processed in known manner to a solar cell wei ⁇ .
  • solar cells with a passivated rear side for example PERC solar cells, can be produced.
  • FIGS. 2 and 4 illustrate a furtherconstrusbei ⁇ game of the method according to the invention.
  • the silicon solar cell substrate 50 is first texture-etched 10. This is followed again by a tube-emitter diffusion 12 with formation of the dopant-containing silicate glass layer 54.
  • a wet chemical edge isolation 20 wherein in cost-effective manner, both the dotierstoffhal- As well as the emitter doping 52 is removed from the back of the silicon solar cell substrate 50.
  • This can be achieved, for example, by means of the silicate glass solution of the first type.
  • the removal 14 of the dopant-containing silicate glass layer from the rear side can be easily replaced by the step of wet-chemical edge insulation 20 from the exemplary embodiment of FIGS. 2 and 4. In this way, a further embodiment of the inventive method results.
  • a complete Entfer ⁇ nen 22 of the dopant-silicate glass layer 54 connects to the wet-chemical edge isolation 20th This can be achieved for example by means of a Silikatglastechnik zates second type.
  • a silicon nitride layer 56 is deposited on the front side of the silicon solar cell substrate 50. This can be done by means of chemical vapor deposition methods known per se (CVD method). Since the dopant-containing silicate glass layer 54 has been completely removed 22 before the deposition 24 of the silicon nitride layer 56, the silicon nitride layer 56 may furthermore remain on the silicon solar cell substrate 50 as an antireflection layer. Except where the respective solar cell manufacturing process, removal of the dopant-silicate glass layer 54 is not required, the silicon nitride layer can also remain open ⁇ as an antireflective layer visibly 56 when the dopant-silicate glass layer was 54 not previously removed completeness, ⁇ dig.
  • CVD method chemical vapor deposition methods known per se
  • the silicon solar cell substrate 50 may be completely immersed in the KOH solution.
  • the back of the Siliziumsolarzellensub- is leveled strats 50 while the silicon nitride layer 56 acts in the other areas as the protective layer and the Silizi ⁇ umsolarzellensubstrat 50 protects against an action of the KOH solution.
  • the result is thus a silicon solar cell substrate 50, which is provided on its front side with a surface texture 51 and an emitter doping 52 and a silicon nitride layer 56 as an antireflection layer and also has a flattened back.
  • This Siliziumsolarzel- lensubstrat 50 can be further processed in a conventional manner to a ferti ⁇ gen solar cell.
  • Metal contacts for contacting the emitter doping on the front side of the silicon solar cell substrate 50 can be fired therethrough ⁇ play for this purpose in through the silicon nitride layer in a known per se.
  • the flattened back of the silicon solar cell substrate 50 provides ideal Vorausset ⁇ tions for the production of a solar cell with a passivated back.
  • the silicon nitride layer 56 and a passivation of the emitter and a solar cell having passivated emitter and passivated ⁇ fourth back can be manufactured.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Weting (AREA)

Abstract

L'invention concerne un procédé de gravure lisse unilatérale (16) d'un substrat silicium (50), selon lequel une couche de protection (54, 56) est réalisée (12, 24) au moins sur une première face dudit substrat silicium, puis une deuxième face du substrat silicium (50) est soumise à une gravure lisse (16) au moyen d'une solution d'attaque alcaline qui présente une température comprise entre 50 et 90°C. Au cours de cette gravure lisse (16), les zones du substrat silicium (50) sur lesquelles la couche de protection (54, 56) a été réalisée sont protégées par ladite couche de protection (54, 56) d'une éventuelle action de la solution de gravure.
PCT/DE2012/100380 2011-12-15 2012-12-14 Procédé de gravure lisse unilatérale d'un substrat silicium WO2013087071A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011056495A DE102011056495A1 (de) 2011-12-15 2011-12-15 Verfahren zum einseitigen Glattätzen eines Siliziumsubstrats
DE102011056495.0 2011-12-15

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WO2013087071A1 true WO2013087071A1 (fr) 2013-06-20

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Publication number Priority date Publication date Assignee Title
DE102017206455A1 (de) 2017-04-13 2018-10-18 Rct Solutions Gmbh Verfahren und Vorrichtung zur chemischen Bearbeitung eines Halbleiter-Substrats
CN208433367U (zh) 2017-04-13 2019-01-25 Rct解决方法有限责任公司 用于化学处理半导体衬底的设备
CN110828618A (zh) * 2019-12-11 2020-02-21 浙江晶科能源有限公司 一种表面织构的太阳能电池的制作方法及太阳能电池
GB2590499A (en) * 2019-12-20 2021-06-30 Singulus Tech Ag Method and wet bench for selectively removing an emitter layer on a single side of a silicon substrate
CN112864013B (zh) * 2021-01-18 2023-10-03 长鑫存储技术有限公司 半导体器件处理方法

Citations (7)

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EP1892767A1 (fr) * 2006-08-22 2008-02-27 BP Solar Espana, S.A. Unipersonal Cellule photovoltaïque et sa production
EP1965439A2 (fr) * 2007-02-28 2008-09-03 Centrotherm Photovoltaics Technology GmbH Procédé de texturation de surfaces
EP1968123A2 (fr) * 2007-02-28 2008-09-10 Centrotherm Photovoltaics Technology GmbH Procédé destiné à la fabrication de cellules solaires au silicium
DE102009005168A1 (de) * 2009-01-14 2010-07-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Solarzelle und Verfahren zur Herstellung einer Solarzelle aus einem Siliziumsubstrat
US20100243042A1 (en) * 2009-03-24 2010-09-30 JA Development Co., Ltd. High-efficiency photovoltaic cells
WO2011035748A1 (fr) * 2009-09-22 2011-03-31 Rena Gmbh Procédé et dispositif d'amincissement par gravure chimique d'une couche semi-conductrice
WO2011098549A1 (fr) * 2010-02-11 2011-08-18 Imec Procédé de texturation sur côté unique

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US7402448B2 (en) * 2003-01-31 2008-07-22 Bp Corporation North America Inc. Photovoltaic cell and production thereof
CN106409970A (zh) * 2005-12-21 2017-02-15 太阳能公司 背面触点太阳能电池及制造方法
EP1936698A1 (fr) * 2006-12-18 2008-06-25 BP Solar Espana, S.A. Unipersonal Procédé de fabrication de cellules photovoltaïques

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1892767A1 (fr) * 2006-08-22 2008-02-27 BP Solar Espana, S.A. Unipersonal Cellule photovoltaïque et sa production
EP1965439A2 (fr) * 2007-02-28 2008-09-03 Centrotherm Photovoltaics Technology GmbH Procédé de texturation de surfaces
EP1968123A2 (fr) * 2007-02-28 2008-09-10 Centrotherm Photovoltaics Technology GmbH Procédé destiné à la fabrication de cellules solaires au silicium
DE102009005168A1 (de) * 2009-01-14 2010-07-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Solarzelle und Verfahren zur Herstellung einer Solarzelle aus einem Siliziumsubstrat
US20100243042A1 (en) * 2009-03-24 2010-09-30 JA Development Co., Ltd. High-efficiency photovoltaic cells
WO2011035748A1 (fr) * 2009-09-22 2011-03-31 Rena Gmbh Procédé et dispositif d'amincissement par gravure chimique d'une couche semi-conductrice
WO2011098549A1 (fr) * 2010-02-11 2011-08-18 Imec Procédé de texturation sur côté unique

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TW201334054A (zh) 2013-08-16
DE102011056495A1 (de) 2013-06-20

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