WO2013073201A1 - Appareil d'évaporation sous vide - Google Patents

Appareil d'évaporation sous vide Download PDF

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Publication number
WO2013073201A1
WO2013073201A1 PCT/JP2012/050796 JP2012050796W WO2013073201A1 WO 2013073201 A1 WO2013073201 A1 WO 2013073201A1 JP 2012050796 W JP2012050796 W JP 2012050796W WO 2013073201 A1 WO2013073201 A1 WO 2013073201A1
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Prior art keywords
vapor deposition
vapor
deposition material
film formation
amount
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PCT/JP2012/050796
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English (en)
Japanese (ja)
Inventor
伸之 重岡
竜也 平野
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三菱重工業株式会社
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Publication of WO2013073201A1 publication Critical patent/WO2013073201A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C23C14/546—Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators

Definitions

  • the present invention relates to a vacuum deposition apparatus.
  • the vapor deposition material is evaporated in a vacuumed container and attached to the surface of a substrate placed at a distant position to form a thin film.
  • the vapor deposition material is usually stored in a crucible or the like.
  • evaporation means for evaporating the deposition material include electron beam evaporation, resistance heating evaporation, induction heating evaporation, and the like.
  • the electron beam evaporation source is widely used as an evaporation source suitable for evaporating a metal having a high melting point or a metal oxide, which is difficult to evaporate by other evaporation means.
  • the vapor deposition material is a material that easily reacts with the crucible material and causes the deterioration of the crucible material, such as aluminum
  • the water-cooled crucible can be used to suppress evaporation while suppressing the reaction between the crucible material and the evaporation material. Is possible.
  • FIG. 16 shows an example of an electron beam evaporation source.
  • the electron beam evaporation source 20 shown in FIG. 16 includes a 270 ° deflection type electron gun 21.
  • the electron beam 22 emitted from the electron gun 21 is deflected by the magnetic field of the magnet and applied to the vapor deposition material accommodated in the water-cooled crucible 23, and the vapor deposition material evaporates.
  • the vapor deposition material decreases as the film formation progresses regardless of the type of evaporation source. Therefore, a vapor deposition material supply means is required for long-time film formation.
  • the film formation performed at the laboratory level is completed in a short time, but the film formation performed at the factory level may take a long time, for example, one week.
  • it is difficult to increase the material filling amount that is, the size of the crucible without limitation, because the electron beam 22 is deflected and guided to the material filling portion 25 in the crucible. It is.
  • FIG. 17 shows a cross-sectional view (a) and a top view (b) of the electron beam evaporation source when the depth of the crucible filled with the vapor deposition material is simply increased.
  • the vapor deposition material 27 accommodated in the crucible 26 decreases with evaporation, and the filling height h decreases to h ′.
  • the irradiation part of an electron beam was the original filling height, as shown in FIG. 17, it will shift
  • the film thickness is controlled to be constant by adjusting the output of the electron beam while measuring the deposition rate with a rate monitor. (See Patent Document 1).
  • the monitor value is affected, and the film formation rate cannot be kept constant.
  • an open crucible is used as a resistance heating evaporation source.
  • the evaporation surface moves downward, so the positional relationship between the edge of the crucible and the evaporation surface changes. This causes fluctuations in the film thickness distribution.
  • the change in the weight may not necessarily reflect the height of the filling surface.
  • molten metal having high wettability to the crucible such as aluminum and gallium, wets and spreads to the crucible surface at a position higher than the liquid level as it is heated in the crucible, and the liquid level is lowered accordingly.
  • the combined weight of the crucible and the vapor deposition material does not change due to wetting. Further, as shown in FIG.
  • the evaporated deposition material adheres to a position higher than the liquid level F inside the crucible 28, and the deposited material does not re-evaporate and does not melt again to the liquid level. If there is no contribution, the actual change in the height of the filling surface is greater than the change in weight. This is a problem particularly in an evaporation source called a cold lip having a structure in which a temperature rise in the vicinity of the crucible is suppressed in order to prevent overflow due to the rising of the evaporation material.
  • the present invention has been made in view of such circumstances, and an object of the present invention is to provide a vacuum evaporation apparatus capable of forming a film having a uniform thickness for a long time regardless of the evaporation material.
  • the vacuum vapor deposition apparatus of the present invention employs the following means.
  • a vapor deposition material container for accommodating a vapor deposition material, an evaporation means for applying energy to the vapor deposition material to evaporate the vapor deposition material, and a position at which a tilt angle with respect to a vertically upward direction of a vapor generation surface is different.
  • a plurality of film formation rate monitors for observing the film formation rate at 1 and the film formation rate observed by the film formation rate monitor at 1 is compared with a predetermined set value for the film formation rate,
  • a new deposition material is supplied to the deposition material container, and a deposition rate controller for controlling the amount of energy applied to the deposition material of the evaporation means so that the observed variation in the deposition rate is within a predetermined range.
  • a vapor supply distribution calculating unit that calculates the vapor amount distribution of the vapor deposition material evaporated by the evaporation means using the film formation rate observed by the plurality of film formation rate monitors, and the calculated vapor Predetermining the quantity distribution Material supply control for controlling the supply amount and the supply timing of the vapor deposition material so that the fluctuation of the calculated vapor amount distribution with respect to the set value of the vapor amount distribution is within a predetermined range in comparison with the set value of the vapor amount distribution
  • a vacuum vapor deposition apparatus comprising the unit.
  • the deposition rate is controlled to be constant by the deposition rate control unit. Further, by using a plurality of film formation rate monitors, it is possible to calculate the vapor amount distribution of the vapor deposition material. The calculated vapor amount distribution is compared with the set value of the vapor amount distribution by the material supply control unit, and the supply amount and supply timing of the vapor deposition material are controlled so that the fluctuation of the vapor amount distribution falls within a predetermined range. Thereby, regardless of the type of the vapor deposition means and the vapor deposition material container, a change in the vapor amount distribution (a fluctuation in the film thickness distribution) can be suppressed.
  • the fluctuation range of the film thickness distribution By controlling the fluctuation range of the film thickness distribution within a certain range, it is possible to form a film for a long time with a stable film thickness distribution and a film forming speed. According to the first aspect, it is possible to accurately detect the amount of the evaporation material in the evaporation source regardless of the type of vapor deposition material (melting material, sublimation material).
  • the vapor deposition member includes a line that passes over the vapor generation surface at regular intervals, and the plurality of film formation rate monitors includes the film formation rate control unit and the vapor amount distribution calculation unit.
  • the second film formation rate monitor may be arranged at a position where the vapor deposition member passes between the second film formation rate monitor and the vapor generation surface.
  • the deposition target member passes between the vapor generation surface and the second film formation rate monitor at regular intervals, so that the second film formation rate monitor is covered with the substrate for most of the time. It will be. Therefore, when a crystal resonator is used as the second film formation rate monitor, there is an effect that consumption of the crystal resonator is reduced. Further, it is possible to use a single-point monitor instead of an expensive multi-point monitor. Furthermore, by disposing the second film formation rate monitor above the line, it becomes easy to make an angle difference between the inclination angle of the first film formation rate line and the inclination angle of the second film formation rate line. Thereby, the detection accuracy of the change in the steam amount distribution can be improved.
  • the change in the amount of the vapor deposition material previously stored in the vapor deposition material container is correlated with the change in the vapor amount distribution, and the vapor amount distribution calculated based on the correlation is correlated. It is preferable that the vapor deposition material is supplied in such an amount that the fluctuation is within a predetermined range.
  • the accuracy of control in the material supply control unit is improved by obtaining the correlation between the change in the amount of the vapor deposition material previously stored in the vapor deposition material container and the change in the vapor amount distribution. It becomes possible to make it.
  • the second aspect of the present invention includes a vapor deposition material container that contains a vapor deposition material, an evaporation unit that applies a constant energy to the vapor deposition material to evaporate the vapor deposition material, and a new vapor deposition material in the vapor deposition material container.
  • a film forming speed monitor for observing the film forming speed at a position that makes a tilt angle with respect to the vertical upward direction of the vapor generation surface, and the film forming speed observed by the film forming speed monitor in advance.
  • the supply amount and supply timing of the vapor deposition material by the material supply unit so that the observed fluctuation of the film formation rate with respect to the set value of the film formation rate is within a predetermined range.
  • a material supply control unit for controlling the vacuum evaporation apparatus.
  • a constant energy is given to the vapor deposition material by the film formation rate control unit, and the supply amount and the supply timing of the vapor deposition material are controlled based on the fluctuation of the film formation rate.
  • the filling amount of the vapor deposition material can be kept constant, and film formation can be performed for a long time with a stable film thickness distribution and film formation speed.
  • the change in the amount of the vapor deposition material previously stored in the vapor deposition material container is correlated with the change in the film formation rate, and the observed film formation rate is determined based on the correlation. It is preferable that the vapor deposition material is supplied in such an amount that the fluctuation is within a predetermined range.
  • the accuracy of control in the material supply control unit is improved by obtaining the correlation between the change in the amount of the vapor deposition material previously stored in the vapor deposition material container and the change in the film formation rate. It becomes possible to make it.
  • the third aspect of the present invention includes a vapor deposition material container for accommodating a vapor deposition material, an evaporation means for applying energy to the vapor deposition material to evaporate the vapor deposition material, and a vertical tilt direction with respect to a vertical direction of the vapor generation surface.
  • the film formation speed monitor that observes the film formation speed at an angled position, and the film formation speed observed by the film formation speed monitor are compared with a predetermined film formation speed setting value, and the film formation speed setting value
  • a new deposition material is supplied to the deposition material container, and a deposition rate controller for controlling the amount of energy applied to the deposition material of the evaporation means so that the observed variation in the deposition rate is within a predetermined range.
  • the material supply unit compares the energy amount variation with a predetermined energy amount set value, and the material supply unit causes the energy amount variation with respect to the energy amount set value to be within a predetermined range.
  • the amount of energy applied to the vapor deposition material is adjusted by the film formation rate control unit, and the film formation rate is controlled to be constant.
  • the fluctuation value of the energy amount given to the vapor deposition material is output to the material supply control unit.
  • the material supply control unit receives the output fluctuation value of the energy amount, and controls the supply amount and supply timing of the vapor deposition material so that the fluctuation value of the energy amount falls within a predetermined range based on the fluctuation value.
  • the filling amount of the vapor deposition material can be kept constant, and film formation can be performed for a long time with a stable film thickness distribution and film formation speed.
  • the amount of the evaporation material in the evaporation source can be accurately detected regardless of the type of vapor deposition means, vapor deposition material container, and vapor deposition material (melting material, sublimation material).
  • a change in the amount of the vapor deposition material previously stored in the vapor deposition material container is correlated with a fluctuation in the energy amount, and the fluctuation in the energy amount is predetermined based on the correlation. It is preferable that the vapor deposition material is supplied in an amount that falls within the above range.
  • the control of the material supply control unit can be performed.
  • the accuracy can be improved.
  • the variation range of the film thickness distribution can be controlled within a certain range by detecting the change in the filling amount of the vapor deposition material from the change in the vapor amount distribution, and the stable film thickness distribution and the composition can be controlled.
  • a film can be formed for a long time at a film speed.
  • the evaporation material is a graph showing transition of V 1, and V 2 in the case of continuously supplied. It is a figure which shows transition of (alpha) at the time of supplying vapor deposition material continuously. It is a graph showing transition of V 1 and V 2 in the case of intermittently supplying the deposition material. It is a figure which shows transition of (alpha) at the time of supplying vapor deposition material intermittently.
  • the control diagram structure of the vacuum evaporation system which concerns on 2nd Embodiment is shown.
  • the control diagram structure of the vacuum evaporation system which concerns on 3rd Embodiment is shown.
  • the schematic sectional drawing of the vacuum evaporation system using the heater for crucible heating is shown.
  • FIG. 1 the schematic block diagram of the vacuum evaporation system 1 which concerns on 1st Embodiment is shown.
  • FIG. 2 the control diagram structure of the vacuum evaporation system 1 is shown.
  • the vacuum vapor deposition apparatus 1 includes a vapor deposition material container 2, evaporation means (not shown), film formation rate monitors 3 and 4, a film formation rate control unit (not shown), a material supply unit 5, and a vapor amount distribution calculation unit (not shown). And a material supply control unit (not shown).
  • the vapor deposition material container 2 is a container that can accommodate the vapor deposition material 6 disposed in the vacuum container, and is a crucible or the like.
  • the material of the crucible may be appropriately selected according to the type of vapor deposition material 6 to be accommodated and the evaporation means.
  • the vapor deposition material 6 may be a metal material such as aluminum or titanium.
  • a substrate 7 or the like is disposed at a position facing the vapor generation surface of the vapor deposition material container.
  • substrate 7 does not necessarily need to be arrange
  • the evaporating means gives energy to the vapor deposition material 6 so that the vapor deposition material 6 can be evaporated.
  • the vapor deposition means may be electron beam evaporation, resistance heating evaporation, induction heating evaporation, or the like. In this embodiment, electron beam evaporation is used.
  • Electron beam evaporation is a method in which an electron beam is focused on a vapor deposition material 6 filled in a copper crucible or the like to heat and evaporate.
  • the energy applied to the vapor deposition material 6 can be controlled by adjusting the output of the electron gun.
  • the electric current is heated by mounting and evaporating the substance.
  • the energy given to the vapor deposition material 6 can be controlled by adjusting the heating temperature or the heater output.
  • Induction heating evaporation is to heat and evaporate the vapor deposition material 6 stored in a crucible such as carbon by high frequency induction heating.
  • the energy given to the vapor deposition material 6 can be controlled by adjusting the frequency or the high frequency output.
  • a plurality of film formation rate monitors are provided at angular positions where the tilt angles from the vertically upward direction of the vapor generation surface S are different.
  • the film formation rate monitor includes a first film formation rate monitor 3 and a second film formation rate monitor 4.
  • the film formation rate monitor can observe the film formation rate (vapor amount) by measuring the film thickness of the vapor deposition material deposited on itself.
  • the film formation rate monitor is a quartz film thickness center or the like.
  • the quartz film thickness sensor utilizes the fact that the natural frequency of a quartz crystal changes due to its mass change.Evaporated vapor deposition material is deposited on the recommended vibrator to detect the natural frequency, and the frequency change is detected. By monitoring, the film thickness of the vapor deposition material deposited on itself is measured.
  • the distance from the steam generator point P of the vapor deposition material container 2 evaporation material 6 filled in is L 1
  • vertically upward with respect to the steam generating surface S comprises a steam generating portion P Is provided at a position where the tilt angle from the line x extending to is ⁇ 1 .
  • ⁇ 1 is preferably set to be smaller as long as it does not prevent the vapor from adhering to the substrate 7.
  • the first film formation monitor 3 can be measured include fine surface S 1 on the surface facing the steam generation portion P, and the thickness of the deposition material deposited on the micro-surface S 1.
  • the second deposition rate monitor 4 the distance from the steam generator point P of the vapor deposition material container 2 evaporation material 6 filled in is L 2, vertically upward with respect to the steam generating surface S comprises a steam generating portion P Is provided at a position where the tilt angle from the line x extending to is ⁇ 2 .
  • L 2 may be the same as L 1 , but may be different from L 1 .
  • L 2 is preferably shorter than L 1 so that the film formation rate monitor is comparable.
  • ⁇ 2 is 60 ° or less, more preferably 45 ° or less. If ⁇ 2 is too large, it is difficult to uniformly deposit the film on the deposition rate monitor, and measurement becomes unstable.
  • the second film forming monitor 4 can be measured include microfacet S 2 on the surface facing the steam generation portion P, and the thickness of the deposition material deposited on the micro-surface S 2.
  • the film formation speed control unit is connected to the first film formation speed monitor 3, and can feedback control the film formation speed V 1 observed by the first film formation speed monitor 3. Specifically, the deposition rate control unit compares the deposition rate V 1 with the set value V s and outputs the electron beam so that the variation of the deposition rate V 1 with respect to the set value V s falls within the set value range. To keep the film formation speed V 1 constant.
  • the material supply unit 5 can supply a new vapor deposition material 8 to the vapor deposition material container 2.
  • the newly supplied vapor deposition material 8 may be a wire, a pellet, or another supply form.
  • wire supply or liquid supply is preferable.
  • pellet supply or shot (grain) supply may be applied in addition to the above supply means.
  • the vapor deposition material 8 is supplied to the portion where the vapor deposition material 6 is reduced in the vapor deposition material container. At that time, it is preferable that the position is such that it cannot be directly evaporated by the evaporation means and can be melted.
  • it may be supplied slightly inside the outer periphery of the molten pool 9 formed by irradiation with an electron beam.
  • the vapor amount distribution calculation unit is connected to a plurality of film formation rate monitors, and calculates the vapor amount distribution ⁇ using the film formation rates observed by the plurality of film formation rate monitors.
  • a calculation method using the film formation speeds observed by the first film formation speed monitor 3 and the second film formation speed monitor 4 will be described.
  • the distribution of the amount of vapor from the evaporation source that can be regarded as a minute planar shape can be approximately expressed as (cos ⁇ ) ⁇ , where ⁇ is a tilt angle from a line x extending vertically upward with respect to the vapor generation surface S. it can.
  • the unit time to reach the minute surfaces S 1 and S 2 and the amount of vapor per unit area (referred to as V 1 and V 2 , respectively) are A / L 1 2 * (cos ⁇ 1 ) ⁇ and A / L 2 2, respectively. * (Cos ⁇ 2 ) It can also be expressed as ⁇ .
  • A is a coefficient that varies depending on the distance from the vapor generation surface of the minute surface and the amount of vapor generated in the first place
  • ⁇ is a vapor that varies depending on the shape of the vapor deposition material filled in the vapor deposition material container, the evaporation rate, and the like. This is a parameter representing the shape of the quantity distribution.
  • the ratio of V 1 and V 2 is constant with evaporation.
  • the ratio between V 1 and V 2 changes.
  • V 1 / V 2 ⁇ A / L 1 2 * (cos ⁇ 1) ⁇ / ⁇ A / L 2 2 * (cos ⁇ 2)
  • the material supply control unit compares the calculated vapor amount distribution with a preset value of the vapor amount distribution, and supplies the vapor deposition material 8 so that the calculated vapor amount distribution falls within the range of the set value of the vapor amount distribution. And the supply timing is controlled.
  • the material supply control unit supplies the vapor deposition material 8 into the vapor deposition material container so that the amount of the vapor deposition material filled in the vapor deposition material container becomes constant according to the change amount of the vapor amount distribution. Can do. As a result, the amount of change in the steam amount distribution can be controlled to be within a certain range.
  • the tilt angle ⁇ 1 of the first deposition rate monitor 3 is 30 °
  • the tilt angle ⁇ 2 of the second deposition rate monitor 4 is 45 °.
  • the filament current of the electron gun so that deposition rate V 1 observed at a first deposition rate monitor 3 by a film forming speed controller becomes equal to the set value Vs.
  • the film formation speed may be controlled by the second film formation speed monitor 4.
  • the film formation speed setting value Vs is set to the first film formation speed monitor 3 even at the same film formation speed. It is different from the case of controlling by.
  • the film formation rate control unit keeps the film formation rate V 1 constant, and at the same time, the vapor amount distribution calculation unit obtains the value of the vapor amount distribution ⁇ that indirectly represents the shape of the film thickness distribution.
  • the vapor amount distribution ⁇ obtained by the vapor amount distribution calculation unit is feedback controlled (for example, PID control) by the material supply control unit. That is, the calculated vapor amount distribution ⁇ is compared with the set value ⁇ s of the vapor amount distribution, and the supply amount and the supply timing of the vapor deposition material 8 are set so that the calculated vapor amount distribution ⁇ is equal to the set value ⁇ s of the vapor amount distribution. By adjusting, the vapor amount distribution ⁇ is made constant.
  • FIG. 3 shows changes in V 1 and V 2 when the vapor deposition material 8 is continuously supplied.
  • FIG. 4 shows the transition of ⁇ when the vapor deposition material 8 is continuously supplied.
  • the feed amount of the vapor deposition material 8 is feedback-controlled by the value of the vapor amount distribution ⁇ so that a constant amount of the vapor deposition material is always present in the vapor deposition material container.
  • V 1 maintains a constant value
  • V 2 and ⁇ shift so as to maintain a set value.
  • the set value ⁇ s of the evaporation amount distribution is set, for example, in the range of ⁇ 5% to + 5% of the allowable fluctuation range around the most preferable vapor amount distribution value.
  • FIG. 5 shows changes in V 1 and V 2 when the vapor deposition material 8 is intermittently supplied.
  • FIG. 6 shows the transition of ⁇ when the vapor deposition material 8 is intermittently supplied.
  • the evaporation amount distribution set value ⁇ s is set within a certain range, and when the evaporation amount distribution ⁇ falls below the set value ⁇ s , the supply of the vapor deposition material 8 is started and evaporated.
  • the quantity distribution ⁇ exceeds the set value ⁇ s
  • V 1 maintains a constant value
  • the supply amount and the supply timing of the vapor deposition material 8 by the material supply control unit may be performed using a table that associates the vapor amount distribution ⁇ obtained in advance with the filling amount of the vapor deposition material.
  • the vapor amount distribution ⁇ obtained by the vapor amount distribution calculation unit refers to the above table and detects whether the current filling amount of the vapor deposition material is excessive or insufficient. As a result, the operation of the material supply unit is controlled so that a constant amount of vapor deposition material is always present in the vapor deposition material container.
  • FIG. 7 illustrates a graph of a table that associates the vapor amount distribution ⁇ with the filling amount of the vapor deposition material.
  • the horizontal axis represents the steam amount distribution ⁇
  • the vertical axis represents the filling amount.
  • the vapor amount distribution ⁇ is larger than 1.
  • the value of the vapor distribution amount ⁇ increases (directivity increases).
  • FIG. 7 when the vapor amount distribution ⁇ is 1.3 or more, it is detected that the filling amount of the vapor deposition material is sufficient (Full), and when the vapor amount distribution ⁇ exceeds 1.6, the filling amount of the vapor deposition material is insufficient. (Empty) is detected.
  • the value of the vapor amount distribution ⁇ is not limited to the above example, and can be appropriately set depending on the structures of the vapor deposition material container and the evaporation means.
  • the vapor amount distribution ⁇ changes with changes in the amount and shape of the vapor deposition material filled in the vapor deposition material container as the film formation proceeds.
  • ⁇ 2 > ⁇ 1 that is, cos ⁇ 2 ⁇ cos ⁇ 1
  • the amount of change of V ⁇ cos ⁇ ⁇ with respect to ⁇ is ⁇ 2 > ⁇ 1 . Therefore, when the steam amount distribution ⁇ increases as shown in FIG. 8, V 2 decreases even if V 1 is constant.
  • FIG. 9 shows changes in V 1 and V 2 when the difference between ⁇ 1 and ⁇ 2 is large.
  • FIG. 10 shows the transition of V 1 and V 2 when the difference between ⁇ 1 and ⁇ 2 is small. The greater the difference between ⁇ 1 and ⁇ 2 , the greater the change in V 2 that accompanies the change in the steam amount distribution ⁇ .
  • the fluctuation of the vapor amount distribution can be controlled within a certain range, it is possible to form a film for a long time with a stable vapor amount distribution (film thickness distribution) and a film formation speed.
  • the film thickness distribution has been detected indirectly by using a float or the like, or indirectly by optical appearance such as laser reflection on the liquid surface. Therefore, the amount of the vapor deposition material in the vapor deposition material container can be accurately detected regardless of the type of vapor deposition material (melted material, sublimation material).
  • the material supply unit may be any type of vapor deposition material to be supplied (wire, pellet, etc.). Further, it can be applied to both continuous supply and intermittent supply.
  • FIG. 11 the schematic block diagram of the vacuum evaporation system 10 which concerns on the modification of 1st Embodiment is shown.
  • the vacuum deposition apparatus 10 is an in-line film forming apparatus in which the substrate 17 passes over the vapor generation surface at regular intervals, and the second film forming speed monitor 14 is above the vacuum container above the line through which the substrate 17 passes. It is provided in.
  • the configuration not particularly described is the same as that of the first embodiment.
  • FIG. 11 in order to demonstrate the characteristic part of this application, another structure is abbreviate
  • the substrate 17 passes between the vapor generation surface S and the second film formation rate monitor 14 at regular intervals. Thereby, as shown in FIG. 12, monitor the deposition rate V 2 of the second deposition rate monitor 14 is intermittently.
  • V 2 since ⁇ 1 > ⁇ 2 , the directivity of the steam amount distribution ⁇ increases and V 2 also increases. Therefore, the deposition progresses, if the filling amount of the vapor deposition material is reduced, the deposition rate V 2 changes as shown in FIG 13.
  • the film formation speed control unit the amount of energy given to the vapor deposition material by the evaporation means is controlled by PID control or the like, and the film formation speed V 1 is kept at a constant value.
  • the second film formation rate monitor 14 is covered with the substrate for most of the time. It will be. For example, assuming that the length of the substrate tray is 450 mm and the interval between the trays is 50 mm, the time during which the deposition material is deposited on the second deposition rate monitor 14 is always exposed to the above deposition material. It is about 1/10 of the case. Thereby, the consumption of the crystal unit is reduced. Further, it is possible to use a single-point monitor instead of an expensive multi-point monitor.
  • the tilt angle ⁇ 1 of the first deposition rate monitor 13 is arranged at a position that is further tilted (larger angle) than 30 °. Therefore, if the second film formation rate monitor 14 is disposed at a position further tilted than the first film formation rate monitor 13, it is difficult to make an angle difference between ⁇ 1 and ⁇ 2 . According to this modification, the second film formation rate monitor 14 is arranged above the vacuum vessel 11 so that an angle difference between ⁇ 1 and ⁇ 2 can be easily obtained. Thereby, the detection accuracy of the change in the steam amount distribution can be improved.
  • FIG. 14 shows a control diagram configuration of the vacuum evaporation apparatus according to the present embodiment.
  • the vacuum vapor deposition apparatus according to this embodiment includes a vapor deposition material container, an evaporation unit, a film formation rate monitor, a film formation rate control unit, a material supply unit, and a material supply control unit.
  • a configuration different from the first embodiment will be described.
  • the evaporation means is capable of giving energy to the vapor deposition material and evaporating the vapor deposition material.
  • the vapor deposition means may be electron beam evaporation, resistance heating evaporation, induction heating evaporation, or the like. In this embodiment, electron beam evaporation is used.
  • the film formation rate monitor is provided at a position that makes a tilt angle with respect to the vertical upward direction of the vapor generation surface.
  • the deposition rate monitor is composed of only the first deposition monitor.
  • the film formation rate monitor can observe the film formation rate (vapor amount) by measuring the film thickness of the vapor deposition material deposited on itself.
  • a distance from the steam generator point P of the deposition material filled in the vapor deposition material container is L 1
  • a line extending vertically upward to the steam generating surface S comprises a steam generating portion P inclination angle from x is provided at a position which is theta 1.
  • ⁇ 1 is preferably set to be smaller as long as it does not prevent the vapor from adhering to the substrate.
  • the first film formation monitor can measure include fine surface S 1 on the surface facing the steam generating portion, the thickness of the deposition material deposited on the micro-surface S 1.
  • the film formation speed control unit controls the electron beam so as to maintain a predetermined output value.
  • Material supply control unit is capable of feedback control of the deposition rate V 1. Specifically, the film formation speed V 1 observed with the first film formation speed monitor is compared with a predetermined film formation speed setting value V s, and the film formation speed V 1 with respect to the film formation speed setting value V s is determined. The supply amount and supply timing of the vapor deposition material by the material supply unit are controlled so that the fluctuation is within a predetermined range.
  • the output of the electron beam is kept constant by the film formation rate control unit. If the output is constant, the evaporation amount of the vapor deposition material from the vapor deposition material container is substantially constant. On the other hand, when the amount of the vapor deposition material filled in the vapor deposition material container decreases, the film formation rate fluctuates. In an evaporation source in which the evaporation amount is substantially constant, the fluctuation of the film formation rate can be regarded as substantially due to a decrease in the filling height of the vapor deposition material. Thus, by controlling the quantity of material fed is fed back to the material supply control unit variations in deposition rate V 1 as observed by deposition rate monitor, constant both filling amount of deposition rate V 1 and the deposition material Can keep. According to the present embodiment, the material filling amount in the evaporation source can be kept constant even with a single film formation rate monitor, and a stable film thickness distribution can be obtained.
  • FIG. 15 shows a control diagram configuration of the vacuum evaporation apparatus according to the present embodiment.
  • the vacuum vapor deposition apparatus according to this embodiment includes a vapor deposition material container, an evaporation unit, a film formation rate monitor, a film formation rate control unit, a material supply unit, and a material supply control unit.
  • a configuration different from the first embodiment will be described.
  • the evaporation means is capable of giving energy to the vapor deposition material and evaporating the vapor deposition material.
  • the vapor deposition means may be electron beam evaporation, resistance heating evaporation, induction heating evaporation, or the like. In this embodiment, electron beam evaporation is used.
  • the film formation rate monitor is provided at a position that makes a tilt angle with respect to the vertical upward direction of the vapor generation surface.
  • the deposition rate monitor is composed of only the first deposition monitor.
  • the film formation rate monitor can observe the film formation rate (vapor amount) by measuring the film thickness of the vapor deposition material deposited on itself.
  • a distance from the steam generator point P of the deposition material filled in the vapor deposition material container is L 1
  • a line extending vertically upward to the steam generating surface S comprises a steam generating portion P inclination angle from x is provided at a position which is theta 1.
  • ⁇ 1 is preferably set to be smaller as long as it does not prevent the vapor from adhering to the substrate.
  • the first film formation monitor can measure include fine surface S 1 on the surface facing the steam generating portion, the thickness of the deposition material deposited on the micro-surface S 1.
  • Deposition rate control unit is connected to the first deposition rate monitor, it can be feedback-controlled deposition rate V 1 observed at a first deposition rate monitor. Specifically, the deposition rate control unit compares the deposition rate V 1 with the set value V s and outputs the electron beam so that the variation of the deposition rate V 1 with respect to the set value V s falls within the set value range. (Energy amount) is controlled to keep the film formation speed V 1 constant. The output value of the controlled electron beam is output to the material supply control unit.
  • the material supply control unit receives the output value of the electron beam output from the film formation rate control unit, and compares the actual fluctuation of the output of the electron beam with a predetermined set value of the output of the electron beam. Then, the supply amount and the supply timing of the vapor deposition material by the material supply unit are controlled so that the fluctuation of the actual output of the electron beam with respect to the set value of the output of the electron beam is within a predetermined range.
  • the material supply control unit supplies the vapor deposition material into the vapor deposition material container so that the amount of the vapor deposition material filled in the vapor deposition material container is constant according to the change amount of the output of the electron beam based on the table. Can do. Thereby, it is possible to control the output (energy amount) of the electron beam to be within a certain range.
  • the deposition rate control unit so that the deposition rate V 1 is constant, the evaporation means controls the amount of energy supplied to the evaporation material.
  • the evaporation material quantity charged into the deposition material container is to try to keep the deposition rate V 1 constant when reduced, it is necessary to increase the amount of energy supplied to the evaporation material.
  • both the filling amount of the vapor deposition material can be kept constant by feeding back the fluctuation of the energy amount to the material supply control unit and controlling the material supply amount.
  • the material filling amount in the evaporation source can be kept constant, and a stable film thickness distribution can be obtained. Further, since feedback control of the amount of energy actually applied to the vapor deposition material is used, a stable film formation speed and film thickness distribution can be obtained as compared with the second embodiment.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

La présente invention se rapporte à un appareil d'évaporation sous vide, un film qui présente une épaisseur uniforme, pouvant être formé pendant une longue période de temps sans gêner la détection du film par un matériau de dépôt en phase vapeur évaporé, sans tenir compte du matériau de dépôt en phase vapeur. L'appareil d'évaporation sous vide (1) est pourvu : d'un récipient de matériau de dépôt en phase vapeur (2) ; d'un moyen d'évaporation qui évapore le matériau de dépôt en phase vapeur ; d'une pluralité de dispositifs de surveillance de la vitesse de dépôt (3, 4) qui observent la vitesse de dépôt à des positions selon différents angles d'inclinaison ; d'une unité de commande de la vitesse de dépôt qui compare la vitesse de dépôt d'un dispositif de surveillance de la vitesse de dépôt (3) avec une valeur de réglage prédéterminée et commande la sortie du moyen d'évaporation de telle sorte que la fluctuation de la vitesse de dépôt observée par rapport à la valeur de réglage se situe dans une plage prescrite ; d'une unité d'alimentation en matériau (5) ; d'une unité de calcul de la distribution de la quantité de vapeur qui calcule la distribution de la quantité de vapeur du matériau de dépôt en phase vapeur évaporé par le moyen d'évaporation à l'aide des vitesses de dépôt observées par la pluralité de dispositifs de surveillance de la vitesse de dépôt (3, 4) ; et d'une unité de commande de l'alimentation en matériau qui compare la distribution de la quantité de vapeur calculée à une valeur prédéterminée de réglage de distribution de la quantité de vapeur et commande la quantité de matériau de dépôt en phase vapeur qui doit être fournie et la durée pendant laquelle le matériau de dépôt en phase vapeur doit être fourni de telle sorte que la fluctuation de la distribution de la quantité de vapeur calculée par rapport à la valeur de réglage de distribution de la quantité de vapeur se situe dans une plage prescrite.
PCT/JP2012/050796 2011-11-16 2012-01-17 Appareil d'évaporation sous vide WO2013073201A1 (fr)

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WO2015033713A1 (fr) * 2013-09-05 2015-03-12 株式会社村田製作所 Dispositif de formation de film
CN105960072A (zh) * 2015-12-09 2016-09-21 友达光电股份有限公司 蒸镀装置及蒸镀方法
CN113215535A (zh) * 2021-05-21 2021-08-06 泊肃叶科技(沈阳)有限公司 一种蒸发速率智能可调的蒸发镀膜机

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JP5976830B2 (ja) 2012-10-19 2016-08-24 三菱重工業株式会社 蒸着材料供給方法、基板製造方法、制御装置および蒸着装置

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JP2009503256A (ja) * 2005-07-27 2009-01-29 イーストマン コダック カンパニー 材料を一定速度で気化させる方法
JP2009256743A (ja) * 2008-04-18 2009-11-05 Seiko Epson Corp 蒸着装置

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JP2009503256A (ja) * 2005-07-27 2009-01-29 イーストマン コダック カンパニー 材料を一定速度で気化させる方法
JP2009256743A (ja) * 2008-04-18 2009-11-05 Seiko Epson Corp 蒸着装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015033713A1 (fr) * 2013-09-05 2015-03-12 株式会社村田製作所 Dispositif de formation de film
JP5910797B2 (ja) * 2013-09-05 2016-04-27 株式会社村田製作所 成膜装置
CN105960072A (zh) * 2015-12-09 2016-09-21 友达光电股份有限公司 蒸镀装置及蒸镀方法
CN113215535A (zh) * 2021-05-21 2021-08-06 泊肃叶科技(沈阳)有限公司 一种蒸发速率智能可调的蒸发镀膜机

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