WO2013067865A1 - 磁场传感装置 - Google Patents

磁场传感装置 Download PDF

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Publication number
WO2013067865A1
WO2013067865A1 PCT/CN2012/082015 CN2012082015W WO2013067865A1 WO 2013067865 A1 WO2013067865 A1 WO 2013067865A1 CN 2012082015 W CN2012082015 W CN 2012082015W WO 2013067865 A1 WO2013067865 A1 WO 2013067865A1
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Prior art keywords
magnetic field
coil
current
magnetoresistive
sensing element
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PCT/CN2012/082015
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English (en)
French (fr)
Inventor
詹姆斯·G·迪克
沈卫峰
雷啸锋
薛松生
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江苏多维科技有限公司
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Application filed by 江苏多维科技有限公司 filed Critical 江苏多维科技有限公司
Priority to EP12847626.4A priority Critical patent/EP2790030B1/en
Priority to JP2014540298A priority patent/JP6276190B2/ja
Priority to US14/356,603 priority patent/US9599693B2/en
Publication of WO2013067865A1 publication Critical patent/WO2013067865A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R35/00—Testing or calibrating of apparatus covered by the other groups of this subclass
    • G01R35/005—Calibrating; Standards or reference devices, e.g. voltage or resistance standards, "golden" references
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0017—Means for compensating offset magnetic fields or the magnetic flux to be measured; Means for generating calibration magnetic fields
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0023—Electronic aspects, e.g. circuits for stimulation, evaluation, control; Treating the measured signals; calibration
    • G01R33/0035—Calibration of single magnetic sensors, e.g. integrated calibration
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/007—Environmental aspects, e.g. temperature variations, radiation, stray fields

Definitions

  • the invention relates to a magnetic field sensing device.
  • Magnetic sensors are widely used in modern systems to measure physical parameters including, but not limited to, magnetic field strength, current, position, motion, direction, and the like. There are many different types of sensors used to measure magnetic fields, but these sensors have their drawbacks, such as large size, low sensitivity, narrow dynamic range, high cost, and low stability.
  • the MTJ (Magnetic Tunnel Junction) sensor has high sensitivity, small size, low cost and low power consumption. Although the MTJ sensor is compatible with semiconductor standard manufacturing processes and has high magnetoresistance performance, the method of preparing a high performance MTJ linear magnetic field sensor has not been fully developed. In particular, the problems of temperature characteristics and hysteresis are not easily controlled effectively.
  • the magnetic field sensor consists of a single magnetoresistive element.
  • the magnetoresistive element is generally connected to a Wheatstone bridge to eliminate offset, increase sensitivity, and compensate for temperature characteristics.
  • the bridge construction can compensate for the temperature characteristics, the dependence of the magnetic properties of the magnetic resistance of the sensor on the temperature is not completely suppressed.
  • it is desirable to calibrate sensitivity during operation and a chip-level calibration coil produces a magnetic field along the sensor's sensitive direction for this purpose.
  • the calibration coil provides a periodic low-amplitude current pulse, while a pulsed magnetic field is generated around the coil to calibrate the sensitivity of the magnetometer.
  • the magnetoresistive sensor is composed of ferromagnetic sensing elements, the output curve is mainly nonlinear, and hysteresis is generated due to the generation and movement of the domain walls of the sensing element and other parts such as the magnetic shielding layer or the magnetic collecting layer.
  • a high performance magnetoresistive sensor typically requires another coil that is orthogonal to the calibration coil, wherein the calibration coil provides a periodic saturation field for the sensing element and eliminates magnetic domains.
  • the former we named it the preset/reset coil.
  • a magnetoresistive sensor without a calibration coil is achievable.
  • the disadvantage of this method is that it cannot pass the electronic hand.
  • the segment measures the sensitivity of the sensor. In other words, if the magnetoresistive sensor is not equipped with a calibration coil, the sensitivity of its output curve cannot be monitored and analyzed.
  • implementing a standard self-test system within the sensor is very cumbersome. Therefore, one or two coil configurations are typically required in solid state compass applications. Setting the coil structure increases power consumption while increasing size.
  • the strength of the magnetic field produced by the current line is inversely proportional to its distance.
  • the energy optimization indicates that the distance between the sensor and the calibration coil that traverses the current direction and the distance between the sensor and the reset coil are small enough. Ideally, the two coils should be as close as possible to the sensor, but in practice it is not possible.
  • the present invention provides a magnetic field sensing device that employs a simple coil design to provide preset/reset and calibration functions while reducing size and power consumption.
  • the sensor of the present invention uses an MTJ element or a giant magnetoresistance (GMR) element as a sensitive element, and a preset/reset coil and a calibration coil are integrated on a single chip.
  • the dynamometer is calibrated using a low unipolar or bipolar pulse current cycle with a high bipolar pulse for pre-set/reset operation.
  • the present invention provides a magnetic field sensing device comprising a magnetoresistive sensing element, a coil located in the vicinity of the magnetoresistive sensing element, the coercive force of the magnetoresistive sensing element having the same magnitude as the offset field, the coil Generating a magnetic field parallel to the sensitive axis of the magnetoresistive sensing element, and realizing a reset operation of the magnetoresistive sensing element when the coil passes the first current; and realizing the magnetoresistance when the coil passes the second current Calibration operation of the sensing element.
  • the first current is greater than the second current.
  • the first current and the second current range from 1 mA to 10 mA.
  • the coil is a single conductive layer.
  • the conductive layer has a meander shape.
  • the conductive layer has a spiral shape.
  • the magnetic field sensing device can be used as a solid state compass.
  • Another magnetic field sensing device comprising a magnetoresistive sensing element, a coil located in the vicinity of the magnetoresistive element, the coercive force of the magnetoresistive sensing element having the same magnitude as the offset field, the coil generating a magnetic field,
  • the magnetic field has a first magnetic field component parallel to the sensitive axis of the magnetoresistive sensing element and a second magnetic field component perpendicular to the sensitive axis of the magnetoresistive sensing element, the first magnetic field component being greater than the second magnetic field component, the first magnetic field component being And performing a resetting and calibrating operation on the magnetoresistive sensing element, wherein the second magnetic field component is used to align an edge magnetic domain direction of the magnetoresistive sensing element, when the coil is At the first current, a reset operation of the magnetoresistive sensing element is achieved; when the coil passes the second current, a calibration operation of the magnetoresistive sensing element is achieved.
  • the first current is greater than the second current.
  • the first current and the second current range from 1 mA to 10 mA.
  • the angle between the central axis of the coil and the major axis of the magnetoresistive sensing element is less than or equal to 22.5°.
  • the coil is a single conductive layer.
  • the conductive layer has a meander shape.
  • the conductive layer has a spiral shape.
  • the magnetic field sensing device can be used as a solid state compass.
  • Figure 1 is a conceptual diagram of the design of the sensing element and coil.
  • Figure 2 is a definition of the performance of the magnetic sensor.
  • Figure 3 is a schematic diagram of the reset operation.
  • Figure 4 is a schematic diagram of the calibration work.
  • Fig. 5 is a schematic view showing the edge magnetic domain of the inclined magnetoresistive element.
  • Figure 6 is a schematic diagram of the edge magnetic domain of a non-tilted magnetoresistive element.
  • Figure 7 is a schematic illustration of the geometry of a tortuous coil that can be placed to reduce the size of the magnetoresistive chip.
  • Figure 8 is a schematic view of the geometry of a helical coil.
  • the present invention relates to a magnetoresistive sensor having high precision, low cost, and low power consumption.
  • This low-power sensor is especially suitable for portable electronic devices such as mobile phones, watches, laptops, and touch tablet devices.
  • the magnetoresistive sensor can be used to fabricate a solid state compass for navigation to provide a reference direction for the earth's magnetic field.
  • Figure 1 is a conceptual diagram of the design of the sensing element and coil. As shown, the magnetoresistive sensing element 10 is located above or below the conductor 11 and current 12 flows through the conductor. The magnetic field B (I) 13 generated by current 12 is perpendicular to the direction of the current. The sensing element 10 and the conductor 11 can optionally be set at an angle 14, so that the magnetic field 13 and the sensitive direction 15 of the sensor are not vertical.
  • Figure 2 depicts the output curve 20 of the magnetoresistive sensor, and the output curve 20 defines the coercivity ( ) 21 and the bias Shift (H. ffset ) 22 and other parameters.
  • Output curve 20 is a function of sensor output voltage 23 with respect to external field 24. Ideally, the output curve 20 of the sensor is from point 25. The output curve of the area sensor above point 26 corresponding to the saturation field is nearly linear. But this is an oversimplified model where the output of the sensor shifts as the temperature increases and its hysteresis increases as the domain changes.
  • the sensor is capable of operating in low hysteresis and low offset modes:
  • the sensor is periodically saturated in the direction of the sensitive direction 15, thus driving the magnetization state of the sensor to the position of point 27 of the output curve.
  • a simple initialization process as shown in Figure 3 illustrates this effect.
  • the reset field H reset (30) is used to bring the sensor into saturation and is larger than the area of output curve point 27. After the reset field H reset (30) is removed, the sensor output curve is returned to the operating point 25 via paths 31-32.
  • This simple unipolar pulse reset process is probably the most effective way to remove coercivity. If bipolar pulses are used or a multi-shot unipolar pulse is used, the effect may be better.
  • the last pulse of the continuous pulse provides one.
  • the magnetic field causes the magnetoresistive sensor to be in a region of the magnetic field 30 or more and is saturated.
  • the magnetic field sensing device can perform calibration or self-testing in the manner shown in FIG.
  • a small calibration pulse is generated by the current conductor to produce a small magnetic field H ⁇ 1 (40) that is collinear with the sensitive direction.
  • the magnetic field produces a varying voltage V41 in the magnetoresistive sensor in response to the aforementioned change in the external field H (42), so the sensitivity can be determined:
  • the calibration process is done by using bursts of certain frequencies or shapes and can therefore be distinguished from the background signal. Calibration should be performed periodically or continuously to eliminate the temperature characteristics of the magnetoresistive sensing element 10.
  • the pulse can be unipolar or bipolar, can be a single pulse, or it can be a continuous square or sine wave.
  • Fig. 5 shows the case where the magnetoresistive sensing element 10 is rotated by an angle a (14) with respect to the coil 11.
  • H reset (30) has a component H edge (51 ) parallel to the edge of the magnetoresistive sensing element 10. Since the H edge (51 ) is large enough, the edge magnetic domains 51 point in the same direction, providing a good magnetic moment for the magnetoresistive magnetoresistive sensing element 10 The initial state that is defined.
  • the coil passes the first current
  • the reset operation of the magnetoresistive sensing element is realized;
  • the calibration operation of the magnetoresistive sensing element is realized.
  • the first current is greater than the second current, and the first current and the second current are both in the range of 1 mA to 10 mA.
  • Figure 6 shows a possible arrangement of edge magnetic domains when the magnetoresistive sensing element 10 and the coil 11 are arranged in parallel, such an arrangement cannot produce a reset field component Hedge parallel to the sensor edge .
  • This is a stochastic process that makes the behavior of the sensor unpredictable, and the magnetic domain motion relative to the magnetic moment produces hysteresis during the reset operation.
  • the coil passes the first current, the reset operation of the magnetoresistive sensing element is realized; when the coil passes the second current, the calibration operation of the magnetoresistive sensing element is realized.
  • the first current is greater than the second current, and the first current and the second current are both in the range of 1 mA to 10 mA.
  • the H edge component will not have a significant impact on the calibration behavior during the calibration process.
  • Figure 8 shows the traditional layout method for setting the coil.
  • Figure 7 is another layout of the set coil.
  • the coil 71 is a meandering shape structure that operates between the magnetoresistive sensing elements 10. This layout allows the magnetoresistive sensing element to be packaged more tightly than a traditional spiral layout (shown in Figure 8).
  • a potential problem with tortuous coils is high resistance.
  • the resistance of the meandering coil is: 2N - 1)
  • the magnetic field generated by a meandering coil running above or below the component is:
  • W refers to the width of the conductor
  • t refers to the thickness of the conductor
  • y refers to the height from the surface of the conductor
  • X refers to the position of the sensitive axis from the center of the conductor.
  • Figure 7 defines the relevant geometric parameters. Where “P” is the resistivity of the coil material and “ Vmax " is the maximum voltage that the magnetometer system can provide.
  • the design must be weighed to ensure that there is sufficient H reset to allow the magnetometer system to use the maximum voltage V.
  • a switched capacitor can be designed on the chip to achieve a relatively high voltage, the voltage is preferably maintained in the range of 5V or less. Voltage and coil resistance limit the design of the magnetoresistive magnetoresistive sensing element 10 and magnetometer, they provide an upper limit

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  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

本发明公开了一种磁场传感装置，它利用线圈对磁电阻传感器的输出曲线温度特性进行校准同时对磁电阻传感器的磁化进行复位以消除磁滞的方法。该线圈还可用于自检操作。单个线圈的设置可以减少芯片上焊盘的数量，增加芯片上磁电阻元件的密度，从而降低了芯片的体积。

Description

磁场传感装置 技术领域
本发明涉及一种磁场传感装置。
背景技术
磁性传感器被广泛应用于现代系统以测量包括但不限于磁场强度、 电流、位置、运动、 方向等物理参数。 之前有许多不同类型的传感器用于测量磁场， 但是这些传感器都有其缺 陷， 例如尺寸大， 灵敏度低， 动态范围窄， 成本高， 稳定性低等。
因此， 持续地改进磁传感器， 特别是改进易与半导体器件或集成电路整合的传感器及 其制造方法是有必要的。
隧道结磁电阻 （MTJ， Magnetic Tunnel Junction) 传感器具有高灵敏度， 尺寸小， 成本 低以及功耗低等优点。尽管 MTJ传感器与半导体标准制造工艺相兼容且其具有高磁电阻的 性能，但是制备高性能的 MTJ线性磁场传感器的方法还没有得到充分开发。特别是温度特 性和磁滞的问题不容易得到有效的控制。
磁场传感器由单个的磁电阻元件组成， 在实际应用中一般将磁电阻元件连接成惠斯通 电桥以消除偏移， 增加灵敏度以及对温度特性做一定的补偿。 尽管电桥构造能对温度特性 做出一定的补偿， 但是传感器磁电阻内禀的磁性能对温度的依赖不会得到完全抑制。 对于 高精度测量来说， 在工作状态下校准灵敏度是可取的， 且芯片级别的校准线圈沿传感器敏 感方向产生一个磁场可以达到这个目的。 在磁电阻传感器处于工作状态时， 校准线圈可 以提供一个定期的低振幅的电流脉冲， 与此同时， 线圈周围产生脉冲磁场从而对磁力计的 灵敏度进行校准。
因为磁电阻传感器是由铁磁敏感元件构成， 所以输出曲线主要是非线性的， 磁滞的产 生是因为传感元件以及其他部分 （例如磁屏蔽层或聚磁层） 的畴壁的生成和运动。 为了克 服以上问题， 高性能的磁电阻传感器通常需要另一个线圈， 该线圈相对于校准线圈正交， 其中校准线圈是为传感元件提供定期的饱和场且消除磁畴。前者我们将之命名为预设 /复位 线圈。
设置预设 /复位和校准线圈增加了传感器制造的工序， 同时传感器芯片需要增加更多的 焊盘以及更大的封装体积以适应正交的预设 /复位场和校准场， 从而使传感器的尺寸变大， 最终导致了传感器制造的复杂性。
没有设置校准线圈的磁电阻传感器是可以实现的。 这种方法的缺点是无法通过电子手 段测量传感器的灵敏度。 也就是说， 如果磁电阻传感器没有设置校准线圈， 就不能对其输 出曲线的灵敏度进行监测和分析。 此外， 在传感器内实施标准的自检系统是非常繁琐的。 因此在固态罗盘的应用中通常需要一个或两个线圈结构。 设置线圈结构在增加尺寸的同时 也增加了功耗。
电流线产生的磁场强度与其距离成反比。 能量优化标明： 传感器和穿越电流方向的校 准线圈的距离以及传感器和复位线圈的距离要足够小。 理想的情况下， 两个线圈应尽可能 接近传感器， 但在实际上是不可能的。
发明内容
本发明提供了磁场传感装置，该磁场传感装置采用一种简单的线圈设计提供预设 /复位 和校准功能， 同时可以縮小尺寸降低功耗。本发明所涉及的传感器使用 MTJ元件或巨磁电 阻 （GMR) 元件为敏感元件， 同时在单一芯片上集成有预设 /复位线圈和校准线圈。 该磁 力计采用一个低的单极或双极脉冲电流循环进行校准操作， 采用一个高的双极脉冲进行预 设 /复位操作。
本发明提供一种磁场传感装置， 它包括磁电阻传感元件、 位于磁电阻传感元件附近的 线圈， 所述磁电阻传感元件的矫顽力和偏移场的大小相同， 所述线圈产生一平行于所述磁 电阻传感元件的敏感轴的磁场， 当所述线圈通第一电流时， 实现磁电阻传感元件的复位操 作； 当所述线圈通第二电流时， 实现磁电阻传感元件的校准操作。
优选地， 第一电流大于第二电流。
优选地， 所述第一电流和第二电流大小的范围为 1mA到 10mA。
优选地， 所述线圈是单个的导电层。
优选地， 所述导电层呈曲折形状。
优选地， 所述导电层呈螺旋形状。
优选地， 该磁场传感装置可用作固态罗盘。
另一种磁场传感装置， 它包括磁电阻传感元件、 位于磁电阻元件附近的线圈， 所述磁 电阻传感元件的矫顽力和偏移场的大小相同， 所述线圈产生一磁场， 该磁场具有平行于磁 电阻传感元件敏感轴的第一磁场分量和垂直于磁电阻传感元件敏感轴的第二磁场分量， 第 一磁场分量大于第二磁场分量， 所述第一磁场分量用于对所述磁电阻传感元件进行复位和 校准操作， 所述第二磁场分量用于使磁电阻传感元件的边缘磁畴方向对齐， 当所述线圈通 第一电流时， 实现磁电阻传感元件的复位操作； 当所述线圈通第二电流时， 实现磁电阻传 感元件的校准操作。
优选地， 第一电流大于第二电流。
优选地， 所述第一电流和第二电流大小的范围为 1mA到 10mA。
优选地， 所述线圈的中轴和磁电阻传感元件的长轴之间的夹角小于或等于 22.5° 。 优选地， 所述的线圈是单个的导电层。
优选地， 所述导电层为曲折形状。
优选地， 所述导电层为螺旋形状。
优选地， 该磁场传感装置可用作固态罗盘。
附图说明
图 1是传感元件和线圈的设计概念图。
图 2是磁传感器的性能指标的定义图。
图 3是复位工作示意图。
图 4是校准工作的示意图。
图 5是倾斜的磁电阻元件的边缘磁畴示意图。
图 6是非倾斜的磁电阻元件的边缘磁畴示意图。
图 7是曲折的线圈的几何形状示意图， 该线圈的设置可以减小磁电阻芯片的尺寸。 图 8是螺旋型线圈的几何形状示意图。
具体实施方式
本发明涉及一种具有高精度， 低成本， 低功耗的磁电阻传感器。 该低功耗的传感器特 别地应用于手机、 手表、 手提电脑以及触摸平板设备等便携电子设备。 特别是该磁电阻传 感器可用于制造导航用的固态罗盘以提供地球磁场的参考方向。
图 1是传感元件和线圈的设计概念图。 如图所示， 磁电阻传感元件 10位于导体 11的 上方或者下方， 电流 12流经导体。 电流 12产生的磁场 B (I) 13垂直于电流方向。 传感 元件 10和导体 11可以选择设置一个角度 14， 因此磁场 13和传感器的敏感方向 15不是垂 直的。
图 2描绘了磁电阻传感器的输出曲线 20， 输出曲线 20定义了矫顽力 （ ) 21以及偏 移场 （H。ffset) 22等参数。 输出曲线 20是传感器输出电压 23关于外场 24的函数。 理想情 况下， 传感器的输出曲线 20是从点 25出发。 饱和场对应的点 26以上的区域传感器的输 出曲线是接近线性的。 但是这是一个过于简化的模型， 传感器的输出会随着温度的升高而 发生偏移， 且其磁滞会随着磁畴的改变而增大。
传感器能够在低磁滞和低偏移的模式下工作遵守：
Hc = Hoffset, ( 1 )
传感器在沿敏感方向 15 的方向上被定期饱和， 因此驱使传感器的磁化状态至输出曲线的 点 27的位置。
如图 3所示的一个简单的初始化过程可以说明这种效果。 复位场 Hreset (30) 被用来使 传感器进入饱和状态且大于输出曲线点 27的区域。 复位场 Hreset (30) 消除后， 传感器输 出曲线通过路径 31-32返回到工作点 25上。这种简单的单极脉冲复位过程可能是最有效的 去除矫顽力的方式， 如果采用双极脉冲或者采用一个多拍的单极脉冲可能效果会更好， 在 连续脉冲的最后一次脉冲提供一个磁场使磁电阻传感器位于磁场 30或 30以上的区域并达 到饱和。
在初始化之后， 磁场传感装置可以按照图 4所示的方式进行校准或自检工作。 通过电 流导体产生一个小的校准脉冲产生一个和敏感方向共线的小的磁场 H∞1 (40)。该磁场会在 磁电阻传感器里产生一个变化的电压 V41以回应前述的外场 H (42)导致的变化， 因此灵 敏度就可以确定下来：
Sensitivity = Δ H/ Δ V. (2)
校准过程是通过利用某些特定频率或形状的脉冲串完成的， 因此可以和背景信号相区别。 应定期或持续进行校准以消除磁电阻传感元件 10 的温度特性。 脉冲可以是单极或双极， 可以是一个单脉冲， 也可以是一个连续的方波或正弦波。
通常将磁电阻传感元件 10旋转一定的角度 a ( 14) 是比较有利的， 该角度 ( ( 14) 相 对于线圈 11如图 1所示。 这样做的原因参见图 5和图 6。
图 5展示了磁电阻传感元件 10相对于线圈 11转动角度 a ( 14) 的情况。 在该设置中， Hreset (30)有一个平行于磁电阻传感元件 10的边缘的分量 Hedge (51 )。 由于 Hedge (51 )足 够大， 边缘磁畴 51指向同一个方向， 为磁电阻磁电阻传感元件 10的磁矩提供一个良好的 被定义的初始状态。 当线圈通第一电流时， 实现磁电阻传感元件的复位操作； 当线圈通第 二电流时， 实现磁电阻传感元件的校准操作。 第一电流大于第二电流， 并且第一电流和第 二电流的范围都在 1mA到 10mA。
图 6展示了磁电阻传感元件 10和线圈 11平行排列时边缘磁畴的可能排布， 这样的设 置不能产生平行于传感器边缘的复位场分量 Hedge。在这种情况下， 没有外力使磁畴指向边 缘磁畴 51的方向， 而且在边缘可能产生方向相对的边缘磁畴 61。 这是一个随机过程， 使 传感器的行为不可预知， 磁矩相对的磁畴运动在复位操作时会产生磁滞。 当线圈通第一电 流时， 实现磁电阻传感元件的复位操作； 当线圈通第二电流时， 实现磁电阻传感元件的校 准操作。 第一电流大于第二电流， 并且第一电流和第二电流的范围都在 1mA到 10mA。
校准场可以由如下所示的相对角度来表示：
Htme HcalCos(a) (3)
当角度为 22.5 ° 时可以提供高达 90%的精度。 如果需要的话可以调整为更大的角度， 但是 由于 Hedge分量增加的原因灵敏度会因此降低。另外，如果传感器使用芯片上集成的永磁体 或元件上沉积永磁层的方式偏置， Hedge分量在校准过程中不会对校准行为产生重大影响。
图 8为设置线圈的传统布局方法。 图 7为设置线圈的另外一种布局图。 如图所示， 线 圈 71是曲折的形状结构， 在磁电阻传感元件 10之间运行。 这种布局允许磁电阻传感元件 比传统的螺旋状布局 （如图 8所示） 更加紧密地封装。 曲折型线圈的一个潜在的问题是高 电阻。 曲折型线圈的电阻为： 2N - 1)
?(LU2 ,W3，， ) « LN丄 丄 + 8 (
(4)
2 乂
g ^ L(Wl +W2)
« ( 5 )
WW,
则有:
Figure imgf000006_0001
在元件上方或下方运行的曲折型线圈产生的磁场为:
Figure imgf000007_0001
公式中 "W"指的是导体的宽度， "t "指的是导体的厚度， "y' 指的是距离导体表面的 高度， " X "指的是敏感轴距离导体中心的位置。
同时要注意：
I < V /R ( L, W1 , W2, W3, t , P ) (8)
图 7定义了相关的几何参数。 其中， " P "是线圈材料的电阻率， "Vmax "是磁力计系统能 够提供的最大电压。
设计必须权衡到保证有足够的 Hreset可以使磁力计系统使用最大电压 V 尽管可以在芯 片上设计开关电容实现到相对高的电压， 但是电压最好是保持在 5V或更小的范围内。 电压 和线圈电阻限制了磁电阻磁电阻传感元件 10和磁力计的设计， 他们提供了一个上限可实现
H 同时使复位线圈的尺寸达到最小。
以上对本发明的特定实施例结合图示进行了说明， 很明显， 在不离开本发明的范围和 精神的基础上， 可以对现有技术和工艺进行很多修改。 在本发明的所属技术领域中， 只要 掌握通常知识， 就可以在本发明的技术要旨范围内， 进行多种多样的变更。

Claims

权利要求书
1. 一种磁场传感装置， 其特征在于： 它包括磁电阻传感元件、 位于磁电阻传感元件附 近的线圈， 所述磁电阻传感元件的矫顽力和偏移场的大小相同， 所述线圈产生一平行于所 述磁电阻传感元件的敏感轴的磁场， 当所述线圈通第一电流时， 实现磁电阻传感元件的复 位操作； 当所述线圈通第二电流时， 实现磁电阻传感元件的校准操作。
2. 根据权利要求 1所述的磁场传感装置， 其特征在于： 所述第一电流大于第二电流。
3. 根据权利要求 1所述的磁场传感装置， 其特征在于： 所述第一电流和第二电流大小 的范围为 1mA到 10mA。
4. 根据权利要求 1-3所述的磁场传感装置， 其特征在于： 所述线圈是单个的导电层。
5. 根据权利要求 4所述的磁场传感装置， 其特征在于： 所述导电层呈曲折形状。
6. 根据权利要求 4所述的磁场传感装置， 其特征在于： 所述导电层呈螺旋形状。
7. 根据权利要求 1所述的磁场传感装置， 其特征在于： 该磁场传感装置可用作固态罗
。
8. 另一种磁场传感装置， 其特征在于： 它包括磁电阻传感元件、 位于磁电阻元件附近 的线圈， 所述磁电阻传感元件的矫顽力和偏移场的大小相同， 所述线圈产生一磁场， 该磁 场具有平行于磁电阻传感元件敏感轴的第一磁场分量和垂直于磁电阻传感元件敏感轴的 第二磁场分量， 第一磁场分量大于第二磁场分量， 所述第一磁场分量用于对所述磁电阻传 感元件进行复位和校准操作， 所述第二磁场分量用于使磁电阻传感元件的边缘磁畴方向对 齐， 当所述线圈通第一电流时， 实现磁电阻传感元件的复位操作； 当所述线圈通第二电流 时， 实现磁电阻传感元件的校准操作。
9. 根据权利要求 8所述的磁场传感装置， 其特征在于： 所述第一电流大于第二电流。
10. 根据权利要求 8所述的磁场传感装置， 其特征在于： 所述第一电流和第二电流大 小的范围为 1mA到 10mA。
11. 根据权利要求 8所述的磁场传感装置， 其特征在于： 所述线圈的中轴和磁电阻传 感元件的长轴之间的夹角小于或等于 22.5° 。
12. 根据权利要求 8-11所述的磁场传感装置， 其特征在于： 所述的线圈是单个的导电 层。
13. 根据权利要求 12所述的磁场传感装置， 其特征在于： 所述导电层为曲折形状。
14. 根据权利要求 12所述的磁场传感装置， 其特征在于： 所述导电层为螺旋形状。
15. 根据权利要求 8所述的磁场传感装置， 其特征在于： 该磁场传感装置可用作固态 罗盘。
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