WO2013066023A1 - Dispositif photoélectrique hautement efficace sensibilisé à une hétérojonction inorganique/organique, semi-conducteur inorganique et procédé de fabrication de celui-ci - Google Patents

Dispositif photoélectrique hautement efficace sensibilisé à une hétérojonction inorganique/organique, semi-conducteur inorganique et procédé de fabrication de celui-ci Download PDF

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WO2013066023A1
WO2013066023A1 PCT/KR2012/008988 KR2012008988W WO2013066023A1 WO 2013066023 A1 WO2013066023 A1 WO 2013066023A1 KR 2012008988 W KR2012008988 W KR 2012008988W WO 2013066023 A1 WO2013066023 A1 WO 2013066023A1
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electron
oxide
light
hole
layer
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Korean (ko)
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석상일
임상혁
장정아
이용희
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한국화학연구원
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/102—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising tin oxides, e.g. fluorine-doped SnO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to providing an inorganic semiconductor nanoparticle-sensitized photoelectric device having a high efficiency organic / organic heterojunction structure and a method of manufacturing the same.
  • a hole conductive polymer having the ability to absorb light in the wavelength band in the near infrared region in visible light and the ability to conduct holes in the light absorbing layer
  • a new structure of a photovoltaic cell having a novel structure in which an electron channel is formed in the hole conducting layer to easily separate electrons and holes to further increase light conversion efficiency
  • a method for producing the same In the case of generating excitons, which are electron-hole pairs, by absorbing light that has not been absorbed, a new structure of a photovoltaic cell having a novel structure in which an electron channel is formed in the hole conducting layer to easily separate electrons and holes to further increase light conversion efficiency And a method for producing the same.
  • dye molecules adsorbed on the surface of the porous photoanode generate electron-hole pairs by absorption of solar light, and electrons are injected into the conduction band of the semiconductor oxide used as the porous photoanode and transferred to the transparent electrode. To generate a current.
  • the oxidized dye molecules are reduced again by the oxidation-reduction pair of the electrolyte and the oxidized oxidation-reduction pair is transferred to the photocathode, whereby the solar cell operates.
  • this type of solar cell has a problem of sealing (sealing) by the use of a liquid electrolyte and problems of efficiency and stability of the artificially synthesized organic dye. Therefore, much research is being conducted on so-called inorganic semiconductor nanoparticle solar cells or quantum dot-sensitized solar cells which manufacture light absorption layers using inorganic semiconductor nanoparticles as light absorbers instead of dyes.
  • Inorganic semiconductor nanoparticle solar cells have a higher light absorption coefficient than conventional dye-sensitized solar cells, easy to control bandgap through nanoparticle size control, and high dipole moment. The separation of the resulting excitons into electron-holes is relatively easy.
  • Such inorganic semiconductor nanoparticles include chalcogenides such as PbSe, PbS, PbTe, CdS, CdSe, CdTe, Sb 2 S 3 , Sb 2 Se 3 , Cu 2 S and HgTe.
  • the chalcogenide-based inorganic semiconductor nanoparticles are attached to the porous electron transporter surface forming the electron transport layer used as the photoanode, thereby generating electron-hole (hole) pairs by external light.
  • the inorganic semiconductor nanoparticle light absorber conduction band should be higher than the conduction band of the electron transporter. The higher, the better the photoelectrons generated by the light is injected into the electron transporter.
  • the valence band of the hole conductor forming the hole conductive layer must be higher than that of the inorganic semiconductor nanoparticle light absorber. do.
  • the hole conductor itself should have a large band gap so as not to absorb light in the region absorbed by the inorganic semiconductor nanoparticle light absorber. If the band gap is small and the light absorber absorbs the light to be absorbed, the light absorbed by the light absorber is reduced, resulting in a decrease in efficiency.
  • An object of the present invention is to separate electrons and holes by forming an electron channel inside the hole conductive layer even when the hole conductive polymer used as the hole conductor of the hole conductive layer absorbs light in the inorganic semiconductor sensitive solar cell.
  • the present invention provides a method of manufacturing an optoelectronic device that maintains excellent photoelectric characteristics.
  • the present invention allows electrons and holes to be separated by forming electron channels inside the hole conductive layer even when the long wavelength light in the near infrared region, which is not absorbed by the semiconductor nanoparticle light absorbing layer, is additionally absorbed by the hole conductive layer. It is to provide a method for manufacturing an optoelectronic device that maintains excellent characteristics.
  • the photoelectric device As a result of much research in order to achieve the above object, the photoelectric device according to the present invention, an electron transport layer, a light absorbing layer of inorganic semiconductor nanoparticles attached to the surface of the electron transporter (electron transporter) constituting the electron transport layer and Comprising a hole conductive layer, the hole conductive layer includes a hole conductor for transmitting holes (holes) generated in the light absorption layer and an electron channel forming material for transmitting electrons by forming an electron channel in the hole conductive layer. It is.
  • the electron transporter constituting the electron transport layer is a porous metal oxide (photoanode electron transporter) capable of attaching a large amount of light-absorbing nano-inorganic semiconductor particles (light absorber, sensitizer) to the surface while transferring electrons.
  • the light absorbing layer refers to a layer made of a light absorbing body adsorbed on the surface of the electron transporting body.
  • the optoelectronic device has a large bandgap and transmits electrons and a light having a broad wavelength band of an electron transport layer of a porous metal oxide (photocathode electron transporter) capable of attaching a large amount of light-absorbing nano inorganic semiconductor particles to a surface thereof.
  • a light absorbing layer and a hole conducting layer which are light absorbers made of inorganic semiconductor nanoparticles that receive electrons and form holes (holes), wherein the hole conducting layer transfers holes generated in the light absorbing layer, and hole conduction.
  • An electron channel forming material is formed to form an electron channel inside the layer to absorb the light in the hole conducting layer and transfer the generated electrons.
  • the hole conductive polymer uses a material having a very large band gap so as not to absorb light in the wavelength band absorbed by the light absorber, the hole conductor having such characteristics is very limited and thus the selection thereof is limited. There is a problem that the use of the material constituting the device is limited.
  • a hole conductive polymer which is a hole conductive agent, even when the hole conductive polymer used as the hole conductor absorbs light in a region absorbed by the light absorption layer, It is possible to provide a new optoelectronic device and a method of manufacturing the same, which eliminates or minimizes the so-called filter effect that causes efficiency deterioration.
  • the present invention is to separate the electrons and holes in the light absorbing layer by adopting a hole conductive polymer having a hole conduction characteristic while having a characteristic of additionally absorbing light in the near infrared region that the hole conductor does not absorb in the light absorbing layer,
  • a new photoelectric device and a method of manufacturing the same which can achieve high efficiency by a method of further increasing the density.
  • the present invention has a feature of providing a method of further increasing the efficiency of the optoelectronic device while maintaining a single-cell structure is simple to manufacture.
  • the present invention provides a new optoelectronic device that forms an electron channel in the hole conductive layer like an organic solar cell, and has a band gap that overlaps the wavelength band absorbed by the hole conductor (hole transfer) and the light absorbing layer.
  • a hole-conducting polymer that competitively absorbs light or absorbs light in a long wavelength band of a near infrared region that the light absorbing layer cannot absorb is used as a hole conductor, and further forms hole-holes in the hole conductive layer.
  • An electron channel generated in one hole conductive layer provides a photoelectric device having a novel structure, in which the light absorption wavelength band is wider, further increasing the photoelectric conversion efficiency.
  • the method of manufacturing the optoelectronic device of the present invention may be applied to any conventional method in the art.
  • the electron transporter may be coated and dried on a substrate by using a printing method to form an electron transport layer.
  • the light absorber is coated or the light absorber precursor is coated and calcined or dried to form a light absorbing layer.
  • the electron channel former and the hole conductive polymer are sequentially coated or mixed. It may be coated to prepare a hole conductive layer.
  • a metal oxide more preferably a conventional porous metal oxide can be used, for example Ti oxide, Zn oxide, In oxide, Sn Oxides, W oxides, Nb oxides, Mo oxides, Mg oxides, Zr oxides, Sr oxides, Yr oxides, La oxides, V oxides, Al oxides, Y oxides, Sc oxides, Sm oxides, Ga oxides, In oxides, and SrTi oxides And combinations of one or more thereof.
  • the thickness of the electron transport layer according to the present invention is preferably 0.05 to 10 ⁇ m, the thickness less than 0.05 ⁇ m can not attach a light absorber formed of a sufficient amount of inorganic semiconductor has a disadvantage that the efficiency of the optoelectronic device is reduced In addition, the thickness of more than 10 ⁇ m has a disadvantage in that the distance to transfer the photoelectrons generated from the light to the external circuit is long, which also lowers the efficiency of the optoelectronic device.
  • the particle size of the electron transporter is preferably 5 to 1000 nm, but the particle size of less than 5 nm has a disadvantage that the pores are too small to attach a sufficient amount of light absorber in the pores, the electron carrier per unit area at a particle diameter of more than 1000 nm It is difficult to attach a large amount of the light absorber due to the reduction in the surface area of the photoelectric device, which reduces the efficiency of the photoelectric device.
  • the electron transporter Ti oxide, Zn oxide, In oxide, Sn oxide, W oxide, Nb oxide, Mo oxide, Mg oxide, Zr oxide, Sr oxide, Yr oxide, La oxide, V oxide, Al oxide, Y oxide, Sc oxide, Sm oxide, Ga oxide, In oxide, SrTi oxide, a composite of the oxide and the oxide and the composite may have one or two or more of the inorganic material formed as a coating layer.
  • the pores of the electron transporter formed of the metal oxide may be coated within a very tight range.
  • the light absorber of the present invention is an inorganic semiconductor material that absorbs sunlight to generate an electron-hole pair, and has a small bandgap and a high light absorption coefficient, thereby efficiently absorbing sunlight, and between the electron transporter and the hole conductor. It is preferred that the semiconductor be an inorganic semiconductor having excellent energy band matching between each component and allowing efficient separation and transfer of excitons generated by light.
  • Examples of light absorbers (sensitizers) that absorb electrons and generate electron-holes according to the present invention include CdS, CdSe, CdTe, PbS, PbSe, PbTe, Bi 2 S 3 , Bi 2 Se 3 , InP, InAs, InGaAs , ZnSe, ZnTe, GaN, GaP, GaAs, GaSb, InSb, Si, Ge, AlAs, AlSb, InCuS 2 , In (CuGa) Se 2 , Sb 2 S 3 , Sb 2 Se 3 , Sb 2 Te 3 , SnS x (1 ⁇ x ⁇ 2 ), NiS, CoS, FeS x (1 ⁇ x ⁇ 2 ), In 2 S 3 , MoS, MoSe, Cu 2 S, HgTe, MgSe and one or more selected materials thereof It is preferably a physical or chemical attachment to the surface of the electron transporter has a structure of nanoparticle
  • the band gap means a difference between a conduction band and a valence band of an inorganic semiconductor material, which is a light absorber, and when the size of the band gap or the particle is small depending on the intrinsic properties of the material,
  • the effect of the quantum-confinement effect means a bandgap changed from the intrinsic properties of the material according to the nanoparticle size.
  • the light absorber is physically or chemically attached to the surface of the electron transport layer photoanode to absorb light so that the electrons are well injected into the electron transport layer (layer).
  • the particles of the inorganic semiconductor are preferably attached to the surface of the electron carrier in the form of separate particles of each individual particle, but even if the inorganic semiconductor particles are partially aggregated, there is no big problem.
  • the electron channel forming material for forming the electron channel in the hole conductive layer may cover part and all of the surface of the electron carrier, and may also cover a part of the light absorbing layer or the surface of the light absorber.
  • the electron channel forming material is an electron-hole pair generated by the absorption of light in the hole-conducting polymer of the present invention, which is a hole conductor, so that electrons can be effectively transferred to an electron carrier (layer), thereby providing an external quantum efficiency (external quantum). It can be called hole-electron separator or electron channel material to improve efficiency.
  • the electron channel former is positioned at a position where the lower unoccupied molecular orbital (LUMO) energy band of the hole conductive polymer is higher than the conduction band of the electron carrier to effectively inject the electrons transferred from the hole conductive polymer into the electron transport layer.
  • LUMO lower unoccupied molecular orbital
  • the electron channel forming material according to the present invention may be any material that transfers the separated electrons well to the electron conductive layer while efficiently separating the holes and the electrons from the hole-electron pair.
  • the hole conductive polymer having the characteristics of the present invention competitively absorbs light in the same region as the wavelength band absorbed by the light absorbing layer and transfers holes generated in the light absorbing layer, or absorbs light having a longer wavelength, thereby generating electron-hole pairs. It can be done. It is preferable that the bandgap is smaller than 3.1 eV in order to absorb light and generate an electron-hole pair, having a HOMO higher than the valence band of the light absorber and the HOOC (Highest occupied molecular orbital) of the organic electron channel.
  • P3HT poly [3-hexylthiophene]
  • PCPDTBT poly (2,6- (4,4-bis- (2-ethylhexyl) -4 H -cyclopenta [2,1- b ; 3,4- b ] dithiophene) -alt-4,7 (2,1,3-benzothiadiazole
  • PCPTBT poly ( N -9 ''-heptadecanyl-2,7-carbazole-alt-5,5- (4 ', 7) '-di-2-thienyl-2', 1 ', 3'-benzothiadiazole)
  • PTAA poly (triarylamine)
  • MDMO-PPV poly [2-methoxy-5- (3', 7'-dimethyloctyloxyl) ] -1,4-phenylene vinylene
  • MEH-PPV poly [2-methoxy-5 (2 ''-ethylhexyloxy
  • the composition ratio of the hole conductive polymer and the electron channel forming material is not particularly limited, but 1 to 500 parts by weight, preferably 50 to 200 parts by weight, of the electron channel forming material is used based on 100 parts by weight of the hole conductive polymer. Good to do.
  • the mixing amount of the electron channel forming agent is small, it is difficult to form an efficient electron channel, and when the mixing amount of the electronic channel forming material is too large, there is a problem in that hole transfer of the hole carrier is difficult.
  • the present invention provides a partial or whole portion of a light absorber formed of an inorganic semiconductor (including quantum dot nanoparticles, a discontinuous layer, a continuous layer) and / or an electron carrier formed of a metal oxide that receives electrons to generate electron-hole pairs.
  • An object of the present invention is to provide an optoelectronic device including an electron channel forming a coating layer.
  • the photoelectric device according to the present invention has an electron channel as described above to help effectively transfer charge carriers generated from the hole conductive polymer to the electron carrier of the metal oxide, thereby improving external quantum efficiency. It can be manufactured with high efficiency optoelectronic device.
  • FIG. 1 is an example illustrating a cross-sectional structure of an optoelectronic device according to the present invention.
  • Example 2 shows a value of measuring external quantum efficiency of the photoelectric device according to Example 1 of the present invention.
  • Example 3 shows a value of measuring external quantum efficiency of the photoelectric device according to Example 2 of the present invention.
  • FIG. 4 shows measured values of the external quantum efficiency of the photoelectric device according to Comparative Example 1.
  • porous electron transporter 2 inorganic semiconductor light absorber
  • FIG. 1 is a cross-sectional structure of an optoelectronic device according to an embodiment of the present invention, which includes a porous electron transporter 1, an inorganic semiconductor light absorber 2, a hole conductive polymer 3, an electron channel 4, and a metal electrode ( A photoelectric device having 5) is shown.
  • ethyl cellulose Dissolved 10% by weight of ethyl cellulose in ethyl alcohol in TiO 2 powder with an average particle size of 60 nm (prepared by hydrothermal treatment of titanium perocomplex solution containing 1% by weight based on TiO 2 at 250 ° C for 12 hours).
  • the ethyl cellulose solution was prepared with addition of 5 ml per 1g and TiO 2, Terre pinol (terpinol) the TiO 2 1 g of TiO 2 powder paste by removing the ethyl alcohol, then a solution of 5 g was added to the reduced pressure distillation party.
  • a glass substrate coated with a fluorine-containing tin oxide (FTO; F-doped SnO 2 , 8 ohms / sq, Pilkington, hereinafter FTO substrate) is cut to a size of 25 x 25 mm, and the end is etched to partially remove the FTO. It was.
  • FTO fluorine-containing tin oxide
  • a 50 nm thick, dense TiO 2 thin film was prepared by spray pyrolysis on the cut and partially etched FTO substrate.
  • the spray pyrolysis was performed using a TAA (Titanium acetylacetonate): EtOH (1: 9v / v%) solution, and sprayed for 3 seconds on a FTO substrate placed on a hotplate maintained at 450 ° C. and repeated for 10 seconds. The thickness was adjusted by the method.
  • an electron channel / hole conductive polymer was spin coated by a composite solution of 10 mg of PCBM (phenyl-C 61 -butyricacidmethylester) and 15 mg of P3HT, a hole conductive polymer, dissolved in 1 mL dichlorobenzene.
  • a hole transporter layer which is a composite layer, was formed.
  • the optoelectronic device was completed by Au deposition on a substrate coated with the electron channel former / hole conductive polymer, which is the hole transport layer, using a metal electrode.
  • the external quantum efficiency of the optoelectronic device according to the embodiment is shown in FIG. 2, and the recombination of the hole-electron pair generated by absorbing light in the hole-conducting polymer through the introduction of the electron channel is minimized, and thus the electron outside of the electron generated by the separation of the hole.
  • the external quantum efficiency is about 65% in the region where the hole-conducting polymer is absorbed because it is well transferred to the metal oxide electron transport layer through the furnace electron channel.
  • Example 1 Except not forming the PCBM channel as an electron channel in Example 1, a photoelectric device was manufactured and evaluated in the same manner as in Example 1.
  • the external quantum efficiency of the optoelectronic device according to Comparative Example 1 is shown in FIG. 4 and the contrast with respect to the external quantum efficiency, as shown in Table 1, is an embodiment having an electron channel in the region where absorption of the hole conductive polymer is present. From 65% of 1 to 52%, it can be seen that the external quantum efficiency is greatly reduced.
  • Example 1 Except for replacing the P3HT hole-conducting polymer instead of the P3HT hole-conducting polymer in Example 1 to prepare a photoelectric device in the same manner as in Example 1 and measured the external quantum efficiency as in Example 1.
  • the external quantum efficiency of the optoelectronic device according to the embodiment is shown in FIG. 3, and the recombination of the hole-electron pair generated by absorbing light in the hole-conducting polymer through the introduction of the electron channel is minimized, resulting in the separation of electrons and holes.
  • the external quantum efficiency is about 20% even in the 800 nm area where the light absorber cannot be absorbed because it is well transmitted to the metal oxide electron transporter through the electron channel, and the hole transporter absorbs long-wavelength sunlight in addition to the hole conduction function. Show your contribution.
  • Example 2 Except not forming the PCBM channel as an electron channel in Example 2, and fabricated a photoelectric device in the same manner as in Example 1 and evaluated the performance.
  • External quantum efficiency of the optoelectronic device according to Comparative Example 2 is shown in Figure 5 and the contrast data for the external quantum efficiency is shown in Table 1, Example 2 having an electron channel in the region of the absorption of the hole conductive polymer It can be seen that the external quantum efficiency of is about 20% to almost 0%, which does not produce additional photoelectrons from long-wavelength sunlight.
  • the increase in the external quantum efficiency of the photoelectric device according to Examples 1 to 2 and Comparative Examples 1 to 2 is shown in Table 1, and summarized on a part of the surface of the metal oxide electron transporter and a part of the surface of the entire or inorganic semiconductor light absorber.

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Abstract

La présente invention concerne un dispositif photoélectrique pour une cellule solaire, ayant une nouvelle structure et un bon rendement de photoconversion en comprenant une couche conductrice de trous ayant un polymère conducteur de matière/trous formant un canal d'électrons, et un procédé de fabrication celui-ci. Plus particulièrement, la présente invention concerne un dispositif photoélectrique hautement efficace comprenant une couche de transport d'électrons, une couche d'absorption de lumière et une couche conductrice de trous, et un procédé de fabrication de celui-ci. Dans le dispositif, un polymère conducteur de trous, ayant la capacité d'absorber une lumière dans une plage de longueurs d'onde de la lumière visible à la lumière en proche-infrarouge et ayant une capacité de conduire des trous, peut absorber une lumière simultanément avec la couche d'absorption de lumière ou peut absorber une lumière ayant une longueur d'onde longue qui n'est pas absorbée par la couche d'absorption de lumière de manière à produire des excitons qui sont des combinaisons électron-trou. Dans ce cas, des électrons peuvent être transportés à travers le canal d'électrons.
PCT/KR2012/008988 2011-10-31 2012-10-30 Dispositif photoélectrique hautement efficace sensibilisé à une hétérojonction inorganique/organique, semi-conducteur inorganique et procédé de fabrication de celui-ci WO2013066023A1 (fr)

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KR20220139649A (ko) 2021-04-08 2022-10-17 서울시립대학교 산학협력단 실내 조명용 유기 탠덤 구조 pv 장치
KR102673370B1 (ko) * 2021-08-11 2024-06-10 한국화학연구원 불소 고분자 게이트 유전체 및 이를 이용한 전기소자

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