WO2013062866A1 - Window and mounting arrangement for twist-and-lock gas injector assembly of inductively coupled plasma chamber - Google Patents
Window and mounting arrangement for twist-and-lock gas injector assembly of inductively coupled plasma chamber Download PDFInfo
- Publication number
- WO2013062866A1 WO2013062866A1 PCT/US2012/061029 US2012061029W WO2013062866A1 WO 2013062866 A1 WO2013062866 A1 WO 2013062866A1 US 2012061029 W US2012061029 W US 2012061029W WO 2013062866 A1 WO2013062866 A1 WO 2013062866A1
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- WO
- WIPO (PCT)
- Prior art keywords
- window
- inch
- insert
- diameter
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/32119—Windows
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
Definitions
- the invention relates to components of a plasma processing chamber in which semiconductor substrates are processed.
- a dielectric window of a plasma processing chamber forms a top wall of an inductively coupled plasma chamber wherein semiconductor substrates are plasma processed.
- the plasma is generated by energizing a process gas into a plasma state.
- the process gas is supplied into the chamber by a gas injector assembly comprising a gas injector, RF shield, faceplate and annular insert mounted in a central bore in the window.
- the window comprises a disk having a uniform thickness, a lower vacuum sealing surface on a lower surface thereof adapted to seal against an upper surface of the plasma processing chamber, a central bore configured to receive the gas injector which delivers process gas into the center of the plasma processing chamber, and an upper recess in the upper surface surrounding the central bore and configured to receive the annular insert used to mount the gas injector assembly in the window.
- the insert is an annular insert adapted to fit in the upper recess in the dielectric window.
- the annular disk has a uniform thickness and is adapted to be received in the upper recess, the disk having a cylindrical outer wall, an upper surface, a lower surface, and a bayonet opening extending between the upper and lower surfaces.
- FIG. 1 shows a replaceable window and gas injector assembly for an inductively coupled plasma reaction chamber.
- FIGS. 2A-C show cross sections of a replaceable window and gas injector assembly for a plasma reaction chamber wherein FIG. 2A shows the gas injection assembly connected to a gas supply, FIG. 2B shows the gas injection assembly without the gas supply attached, and FIG. 2C shows details of a gas injector, RF shield, and faceplate held in an annular insert bolted into the dielectric window.
- FIGS. 3A-M show details of a quartz window as described herein wherein FIG. 3A is a perspective view of the window, FIG. 3B is a bottom view of the window, FIG. 3C is a side view of the window along line A-A in FIG. 3B, FIG. 3D is a view along the line C-C in FIG. 3E, FIG. 3E is a top view of the window, FIG. 3F is a view along the line D-D in FIG. 3E, FIG. 3G is a view of detail H in FIG. 3D, FIG. 3H is a view of detail K in FIG. 3F, FIG. 3I is a view of detail G in FIG. 3B, FIG.
- FIG. 3J is a view along the line B-B in FIG. 3G
- FIG. 3K is a view of detail J in FIG. 3D
- FIG. 3L is a view of detail L in FIG. 3E
- FIG. 3M is a view along line E-E in FIG. 3L.
- FIGS. 4A-C show details of a gas injector wherein FIG. 4A is a perspective view of the injector, FIG. 4B is a top view of the injector and FIG. 4C is a side view of the injector.
- FIGS. 5A-C show details of an annular insert with a bayonet opening wherein FIG. 5A is a perspective view of the insert, FIG. 5B is a top view of the insert and FIG. 5C is a view along line A-A in FIG. 5B.
- FIGS. 6A-C show details of an RF shield which surrounds the gas injector wherein FIG. 6A is a perspective view of the RF shield, FIG. 6B is a top view of the RF shield, and FIG. 6C is a side view of the RF shield.
- FIGS. 7A-D show details of a faceplate which surrounds the RF shield and mounts the gas injector by a twist and lock arrangement into the annular insert
- FIG. 7A is a top view of one half of the face plate
- FIG. 7B is a perspective view of the outer side of one half of the faceplate
- FIG. 7C is a perspective view of the inside of one half of the faceplate
- FIG. 7D is a side view of one half of the faceplate.
- Described herein is a replaceable window and gas injector assembly of a plasma reaction chamber in which semiconductor substrates can be processed.
- the window and gas injection assembly are designed to avoid chipping of the window which is typically made of quartz and in prior mounting arrangements the window has a bayonet opening machined therein. Due to the brittle nature of the quartz material, the machined bayonet opening was subject to chipping when the gas injector assembly was inserted into the bayonet opening.
- the replaceable window is made from a dielectric material, such as quartz and has the shape of a disk of uniform thickness.
- a central recess in the upper surface is configured to receive an annular insert having a bayonet opening and a central bore in the window receives a gas injector having a distal end flush or below the bottom surface of the window to deliver process gas into the chamber.
- An induction coil (not shown) above the window energizes the process gas into a plasma state for processing the substrate.
- an etch gas can be supplied by the injector for plasma etching the substrate.
- the gas injector can include one or more gas outlets, a flange which sits on the bottom wall of the central recess is vacuum sealed to the window with an O-ring which fits in a groove on the bottom of the flange.
- An RF shield surrounds the gas injector and a faceplate surrounds the RF shield, The faceplate is a two piece part which is bolted together around the RF shield and the faceplate includes protrusions (lugs) to engage the bayonet opening in the insert.
- the insert with the bayonet opening can comprise any material that has a higher tensile strength than quartz such as plastic material.
- the insert with the bayonet opening can be made of ceramic, metal, silicon carbide, graphite, etc.
- the insert with the bayonet opening is attached to the window with bolts threaded into TORLON inserts 20a (see FIG. 2C) fitted in mounting holes in the window.
- the insert can have threads which can be screwed into the window or the insert can be bonded to the window.
- FIG. 1 shows details of a window 15 having a gas injection assembly mounted in the center thereof.
- the gas injection assembly includes a faceplate 19 engaging an insert 17 having a bayonet opening.
- the gas injection assembly is connected to a gas connection block 21 which receives process gas from supply lines 21a, 21 £> and an injector extending through the window delivers the process gas to the chamber for processing a semiconductor wafer.
- FIGS. 2A-C Details of a replaceable window and gas injector assembly of an inductively coupled plasma chamber are illustrated in FIGS. 2A-C.
- the parts include a quartz window 15, a gas injector 16, an annular insert 17 which is secured to the window by bolts 20, an RF shield 18, and a faceplate 19.
- the gas injection assembly (the gas injector 16, the RF shield 18 and the faceplate 19) is attached to the gas connection block 21.
- the faceplate 19 includes three projections which engage the bayonet opening of the insert 17 in a twist-and-lock fashion.
- FIG. 3A shows details of the window 15 which includes a central cylindrical recess 15a for receipt of the annular insert 17, and 3 threaded or blind holes 15b for receipt of bolts 20 which can be threaded into the window or into threaded inserts fitted in the holes 156 to attach the insert 17 to the window 15.
- the window includes a central bore 15c for receipt of the gas injector 16 and at least one blind hole 15d in the upper surface 15e for receipt of a temperature sensor.
- a clocking feature 15/Ms provided in the bottom outer side surface 15/7 and elongated channels 15g are located in the outer side surface 15/7.
- FIG. 3B is a bottom view of the window shown in FIG. 3A, with an area indicated for detail G.
- the bottom surface 15/ of the window has an annular vacuum sealing surface 15/
- the window preferably has an outer diameter of about 20 inches, and the vacuum sealing surface extends about 1 inch in from the outer edge of the window.
- the clocking feature 15f is formed by a recess having a diameter of about 0.4 inch and height of about 0.3 inch.
- FIG. 3C is a cross section of the window taken along line A-A in Fig. 3B.
- the window preferably has a thickness of about 1 .75 inch
- the channels 15g have a width of about 0.6 inch
- the cylindrical recess 15a has a diameter of about 3.4 inches and a depth of about 0.5 inch.
- FIG. 3D is a cross section of the window with areas indicated for views of details H and J
- FIG. 3E is a top view of the window with areas indicated for section line C-C and detail L
- FIG. 3F is a side view of the window with an area indicated for detail K.
- FIG. 3G is a view of detail H and shows a cross section of one of the channels 1 Sg in the outer surface 15g of the window.
- the channel has a non-uniform depth extending into the outer surface 15/7 such that the depth is a maximum at the midpoint of the channel.
- the channel has planar sidewalls which are parallel to the upper and lower surfaces of the window and the sidewalls are connected by a rounded bottom wall.
- the sidewalls are preferably about 0.6 inch apart and the rounded bottom wall has a radius of curvature of about 0.3 inch.
- the rounded bottom wall extends rectilinearly between two locations along the outer surface 15/7 such that the channel has a maximum depth of about 0.9 inch at its midpoint.
- FIG. 3E is a view of detail K and shows relative dimensions of the blind hole 15d which preferably has a diameter of about 0.22 inch, a depth of about 1.2 inches and a tapered opening with a diameter of about 0.48 inch extending into the upper surface 15e.
- FIG. 3I is a top view of detail G and shows relative dimensions of clocking feature 15f.
- FIG. 3J is a side view along line B-B in FIG. 3I.
- FIG. 3I shows that the clocking feature 15 includes a planar wall parallel to the lower surface of the window and a curved sidewall which preferably has a radius of about 0.6 inch and depth of about 0.3 inch.
- FIG. 3K shows relative dimensions of the cylindrical recess 15a which preferably is a circular recess with a diameter of about 3.4 inches and a depth of about 0.5 inch.
- the three threaded holes 15b are located 120° apart and about 1.25 inches from the center of central bore 5c.
- the threaded holes can have diameters of about 0.4 inch and a depth of about 0.5 inch and can be machined 1/4-32 threaded holes or contain threaded polymer sleeves such as threaded TORLON sleeves to engage the bolts 20.
- the central bore 15c preferably has a diameter of about 1 inch and depth of about 1.25 inches, upper and lower edges of the central bore being rounded with a radius of curvature of about 0.06 inch.
- the bottom of the cylindrical recess 15a is preferably polished to provide a vacuum sealing surface and upper and lower edges of the recess 15a are preferably rounded with a radius of curvature of about 0.02 inch.
- a blind alignment hole 15/c is located about 0.9 inch from the center of central bore 15c and preferably has a diameter of about 0.09 inch and a depth of about 0.15 inch.
- FIG. 3M is an enlarged view of alignment hole 15/c along line E-E in FIG. 3L.
- FIG. 4A shows details of the gas injector 16 which has a group of inner gas outlets 16a, a group of outer gas outlets 16d and a flange 16b, the injector configured such that the end with the outlets 16a and 16d fits in the central bore 15c in the window 15 and the flange 16b rests on the bottom of the cylindrical recess 15a of the quartz window.
- FIG. 4B is a bottom view of the gas injector which shows the details of an inner group of gas outlets 16a and an outer group of gas outlets 16c , the inner and outer outlets supplied the same or different gas at adjustable flow rates.
- the gas injector 16 has 19 inner gas outlets 16a arranged on the distal end of the gas injector 16 in a hexagonal arrangement and the outlets 16a are oriented to inject gas axially toward a substrate undergoing processing. Eight outer outlets 16d are arranged 45° apart around the side of the injector and inject gas in a conical path towards the substrate.
- the lower end of the injector has a diameter of about 1 inch and the flange has a clocking feature 16c.
- FIG. 4C shows the details and dimensions of a side view of the gas injector shown in FIG. 4A.
- FIG. 5A shows an annular insert 17 with a three pronged bayonet opening 17c which is secured in the cylindrical recess 15a of the window 15.
- FIG. 5B shows a top view of the annular insert 17 which has three stepped holes 17a which are 120° apart.
- the insert preferably has an outer diameter of about 3.4 inches and a thickness of about 0.5 inch.
- the stepped holes 17a are preferably about 0.3 inch in diameter at upper portions thereof and about 0.2 inch in diameter at lower portions thereof, with all three stepped holes located on a radius of about 1.3 inches from the center of central bore 17c.
- the stepped holes 17a receive bolts which can be threaded into threaded holes in the window or polymer sleeves located in the blind holes 15b of the window 15.
- the .annular insert 17 has three inwardly extending protrusions 17b that form the bayonet opening.
- each protrusion extends about 58° in a circumferential direction and the space between adjacent protrusions 17b that form the bayonet opening.
- protrusions extends about 62° whereby midpoints of the protrusions are spaced 120° apart.
- the inner surfaces of the protrusions 17b lie on a circle having a diameter of about 2 inches.
- the protrusions 17b have a height of about 0.35 inch and extend inwardly about 0.15 inch from the bayonet opening which has a diameter of about 2.3 inches.
- an injector 16 with surrounding RF shield 18 and faceplate 19 is inserted such that the lower end of the injector extends through central bore 15c and the faceplate 19 is rotated such that three outwardly extending flanges 19c on the lower end of the faceplate 19 are engaged in the gaps between the protrusions 17b and the upper surface of the window 15.
- FIG. 6A is a perspective view of the RF shield 18 which includes a square upper section 18a, a pin 18b, four threaded holes 18c, an O-ring groove 18d, four threaded holes 18c, a lower cylindrical section 18e and an intermediate cylindrical section 18 .
- the four threaded holes 8c receive bolts attaching the RF shield 18 to a gas connection block 21 (see FIG. 1) having two gas lines 21 a, 21b for supplying the inner gas outlets 16a and outer gas outlets 16d of the injector 16.
- the O-ring groove 18d receives an O-ring to provide a gas seal between the gas connection block 21 and the RF shield 18.
- Another O-ring in the bottom of the gas connection block 21 provides a gas seal between the top of the injector 16 and the gas connection block 21.
- the lower cylindrical section 18e and the intermediate cylindrical section 18f of the RF shield 18 fit over the injector 16 such that and upper part of the pin 18b engages a groove on the outer surface of the injector 16 and a lower part of the pin 18b fits in the alignment pin hole 15/f.
- FIG. 6B is atop view of the RF shield 18 and FIG. 6C is a side view of the RF shield 18.
- the RF shield 18 is preferably made of metal such as copper or aluminum optionally plated with a metal such as silver.
- FIGS. 7A-D show details of the faceplate 19.
- the faceplate 19 includes two halves which bolt together around the RF shield 18 and the bottom of the. faceplate includes a twist-and-lock arrangement for securing the injector 16, RF shield 18 and faceplate 19 in the insert 17.
- FIGS.7A-D show a half section of the faceplate 19 which when attached to the other half section forms a cylindrical inner region 19a and a hexagonal outer region 19b having three inclined protrusions 19c at the lower end thereof.
- One half section includes threaded holes 19d on the side face 19 for receiving bolts extending from the other half section to attach the two half sections together.
- the side face 19f also includes alignment pin holes 19e which receive alignment pins extending from the other half section.
- Each half section of the facelate 19 includes three corners 19g where four outer surfaces meet at 120°.
- the bottom of each half section includes a step 19/? which fits over the lower cylindrical section 18e of the RF shield 18.
- Gaps 19/ between the protrusions 19c are sized to allow the protrusions 17b of the insert 17 to slide along the outside of the faceplate 18 and when the bottom of the faceplate 18 engages the window 15, the faceplate 19 can be rotated to move the protrusions 19c into the gaps 17c under the protrusions 17b.
- the faceplate is rotated until the protrusions 19c engage the undersides of the protrusions 17/? and three vertical ribs 19y above each protrusion 19c provide a frictional fit between the inner surfaces of the protrusions 17b and the outer surface of the faceplate 19.
- FIG. 7D is a perspective side view of one of the half sections showing the hexagonal outer region 19b and one of the protrusions 19c which is preferably inclined at an angle of about 4° and three vertical ribs 19/ are provided above the protrusion 19c.
- the annular insert 17, the RF shield 18 and the faceplate 19 provide an improved mounting system for a gas injector 16 in a dielectric window 15.
- the improved mounting system overcomes problems with dielectric windows having bayonet openings for mounting injectors therein which were apt to chip and become damaged due to the brittleness of the window material.
- the annular insert with the bayonet opening fits in a window's cylindrical recess and is adhered to the window with bolts engaging threaded inserts fitted in holes in the recess of the window.
- the insert can be bonded to the window with a suitable bonding material.
- Windows with low tensile strengths such as quartz suffer from chipping when the bayonet opening is machined into the window. Low tensile strengths in the quartz window chip due to a point load being placed on the window when the gas injector assembly is installed.
- the insert is preferably made from a material having a higher tensile strength than the window preferably from a plastic such as "ULTEM" but any other suitable material can be used for the insert such as a ceramic, metal, silicon carbide, graphite, etc.
- ULTEM a plastic
- any other suitable material can be used for the insert such as a ceramic, metal, silicon carbide, graphite, etc.
- the insert constructed from a non-brittle material will eliminate the mounting issues associated with window members chipping when constructed from materials with low tensile yield strengths.
- the gas injector with a flange which has a groove on the bottom for an O-ring, sits on the quartz disk's recess and is vacuum sealed to the window with an O-ring in the groove of the flange to provide a seal between the gas injector and the opening in the window, and an annular insert with a bayonet opening is adhered to the quartz window.
- the gas injector is mounted in an opening in the window with one or more O-rings between the flange on the gas injector and the quartz window.
- the gas outlets on the distal of the gas injector are preferably located below or flush with the inner surface of the window.
- a faceplate with three protrusions (lugs) is inserted into the insert with the bayonet opening and the lugs are hand tightened to hold the injector in place.
- an RF shield surrounds the gas injector and the faceplate surrounds the RF shield.
- the gas injector is preferably made from a dielectric material such as quartz.
- the injector can be made from other material such as aluminum, stainless steel, alumina, silicon nitride, etc.
- the gas outlets can have any desired shape such as uniform diameter along the entire length thereof or other shape such as conically tapered, flared surfaces or radially contoured surfaces.
- the gas outlets can be oriented to inject the gas in any direction, including directly at the substrate and/or at an acute angle with respect to the substrate.
- 19 axially extending gas outlets are arranged on the distal end of the gas injector in a hexagonal arrangement and eight non-axially extending gas outlets are located near or on the outer aside wall of the injector.
- the gas injector is thus clamped in place by the faceplate which is inserted into the bayonet opening of the insert.
- the faceplate is hand tightened to the insert by three lugs whereby the faceplate may be inserted in a twist and lock fashion into the bayonet opening of the insert.
- the outer surface of the faceplate can have a hexagonal shape to allow hand tightening of the faceplate in the bayonet opening of the insert.
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SG11201401748VA SG11201401748VA (en) | 2011-10-25 | 2012-10-19 | Window and mounting arrangement for twist-and-lock gas injector assembly of inductively coupled plasma chamber |
| CN201280052695.7A CN104040024B (en) | 2011-10-25 | 2012-10-19 | Window and Mounting Device for Rotary Lock Gas Injector Assembly for Inductively Coupled Plasma Chambers |
| JP2014538847A JP6215217B2 (en) | 2011-10-25 | 2012-10-19 | Window and mounting structure for twist-lock gas injectors for inductively coupled plasma chambers |
| KR1020147014164A KR102017356B1 (en) | 2011-10-25 | 2012-10-19 | Window and mounting arrangement for twist-and lock gas injector assembly of inductively coupled plasma chamber |
| KR1020197024988A KR102126644B1 (en) | 2011-10-25 | 2012-10-19 | Window and mounting arrangement for twist-and lock gas injector assembly of inductively coupled plasma chamber |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/280,750 | 2011-10-25 | ||
| US13/280,750 US9947512B2 (en) | 2011-10-25 | 2011-10-25 | Window and mounting arrangement for twist-and-lock gas injector assembly of inductively coupled plasma chamber |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2013062866A1 true WO2013062866A1 (en) | 2013-05-02 |
Family
ID=48135005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2012/061029 Ceased WO2013062866A1 (en) | 2011-10-25 | 2012-10-19 | Window and mounting arrangement for twist-and-lock gas injector assembly of inductively coupled plasma chamber |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9947512B2 (en) |
| JP (1) | JP6215217B2 (en) |
| KR (2) | KR102126644B1 (en) |
| CN (1) | CN104040024B (en) |
| SG (2) | SG10201603198RA (en) |
| TW (1) | TWI543254B (en) |
| WO (1) | WO2013062866A1 (en) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9076634B2 (en) * | 2009-09-10 | 2015-07-07 | Lam Research Corporation | Replaceable upper chamber parts of plasma processing apparatus |
| US9388494B2 (en) * | 2012-06-25 | 2016-07-12 | Novellus Systems, Inc. | Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region |
| US9536710B2 (en) * | 2013-02-25 | 2017-01-03 | Applied Materials, Inc. | Tunable gas delivery assembly with internal diffuser and angular injection |
| US20150361582A1 (en) * | 2014-06-17 | 2015-12-17 | Veeco Instruments, Inc. | Gas Flow Flange For A Rotating Disk Reactor For Chemical Vapor Deposition |
| US10249511B2 (en) * | 2014-06-27 | 2019-04-02 | Lam Research Corporation | Ceramic showerhead including central gas injector for tunable convective-diffusive gas flow in semiconductor substrate processing apparatus |
| KR102334378B1 (en) | 2015-09-23 | 2021-12-02 | 삼성전자 주식회사 | Dielectric window, plasma processing system comprising the window, and method for fabricating semiconductor device using the system |
| KR102553629B1 (en) | 2016-06-17 | 2023-07-11 | 삼성전자주식회사 | Plasma processing apparatus |
| TWI663674B (en) * | 2017-07-25 | 2019-06-21 | Hermes-Epitek Corporation | Assembly of chamber lid and ceiling for semiconductor processes and film deposition apparatus |
| US20190032211A1 (en) * | 2017-07-28 | 2019-01-31 | Lam Research Corporation | Monolithic ceramic gas distribution plate |
| DE102018106265B4 (en) | 2017-09-29 | 2025-02-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | INTEGRATED CIRCUIT MANUFACTURING SYSTEM WITH ADJUSTABLE GAS INJECTOR, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING METHOD |
| US11670490B2 (en) * | 2017-09-29 | 2023-06-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated circuit fabrication system with adjustable gas injector |
| WO2020028256A1 (en) * | 2018-07-31 | 2020-02-06 | Lam Research Corporation | Honeycomb injector with dielectric window for substrate processing systems |
| US11600517B2 (en) * | 2018-08-17 | 2023-03-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Screwless semiconductor processing chambers |
| CN110838458B (en) * | 2018-08-17 | 2022-08-09 | 台湾积体电路制造股份有限公司 | Semiconductor processing system and method |
| CN111613508A (en) * | 2019-02-25 | 2020-09-01 | 北京北方华创微电子装备有限公司 | Air inlet device and reaction chamber |
| TW202542358A (en) * | 2019-03-28 | 2025-11-01 | 美商蘭姆研究公司 | Shroud enclosure and apparatuses having the same |
| CN110223904A (en) * | 2019-07-19 | 2019-09-10 | 江苏鲁汶仪器有限公司 | A kind of plasma process system with Faraday shield device |
| USD913979S1 (en) | 2019-08-28 | 2021-03-23 | Applied Materials, Inc. | Inner shield for a substrate processing chamber |
| US12100577B2 (en) * | 2019-08-28 | 2024-09-24 | Applied Materials, Inc. | High conductance inner shield for process chamber |
| KR102781656B1 (en) * | 2020-04-06 | 2025-03-13 | 램 리써치 코포레이션 | Ceramic additive manufacturing techniques for gas injectors |
| US11923179B2 (en) * | 2021-03-26 | 2024-03-05 | Taiwan Semiconductor Manufacturing Company Limited | Plasma processing apparatus and method |
| US11875973B2 (en) * | 2021-07-16 | 2024-01-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for preparing void-free coatings for plasma treatment components |
| US20230411127A1 (en) * | 2022-06-16 | 2023-12-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for retrofitting an etching apparatus |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5824605A (en) * | 1995-07-31 | 1998-10-20 | Lam Research Corporation | Gas dispersion window for plasma apparatus and method of use thereof |
| US20010010257A1 (en) * | 1998-12-30 | 2001-08-02 | Tuqiang Ni | Gas injection system for plasma processing |
| US20030070620A1 (en) * | 2001-10-15 | 2003-04-17 | Cooperberg David J. | Tunable multi-zone gas injection system |
| US20110056626A1 (en) * | 2009-09-10 | 2011-03-10 | Lam Research Corporation | Replaceable upper chamber parts of plasma processing apparatus |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6024826A (en) * | 1996-05-13 | 2000-02-15 | Applied Materials, Inc. | Plasma reactor with heated source of a polymer-hardening precursor material |
| US5643394A (en) | 1994-09-16 | 1997-07-01 | Applied Materials, Inc. | Gas injection slit nozzle for a plasma process reactor |
| KR200153150Y1 (en) * | 1996-06-17 | 1999-08-02 | 윤종용 | Flange for process chamber of semiconductor low pressure chemical vapor deposition equipment |
| JP2001230099A (en) * | 1999-11-24 | 2001-08-24 | Retech Services Inc | Improved plasma torch |
| US7479304B2 (en) * | 2002-02-14 | 2009-01-20 | Applied Materials, Inc. | Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate |
| US7147749B2 (en) * | 2002-09-30 | 2006-12-12 | Tokyo Electron Limited | Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system |
| KR100509231B1 (en) * | 2003-01-03 | 2005-08-22 | 주식회사 아이피에스 | Apparatus for depositing thin film on wafer |
| US7250114B2 (en) * | 2003-05-30 | 2007-07-31 | Lam Research Corporation | Methods of finishing quartz glass surfaces and components made by the methods |
| US7892357B2 (en) * | 2004-01-12 | 2011-02-22 | Axcelis Technologies, Inc. | Gas distribution plate assembly for plasma reactors |
| US7685965B1 (en) * | 2006-01-26 | 2010-03-30 | Lam Research Corporation | Apparatus for shielding process chamber port |
| US8100082B2 (en) * | 2007-05-18 | 2012-01-24 | Tokyo Electron Limited | Method and system for introducing process fluid through a chamber component |
| US8187414B2 (en) | 2007-10-12 | 2012-05-29 | Lam Research Corporation | Anchoring inserts, electrode assemblies, and plasma processing chambers |
| US8137463B2 (en) | 2007-12-19 | 2012-03-20 | Applied Materials, Inc. | Dual zone gas injection nozzle |
| US8161906B2 (en) * | 2008-07-07 | 2012-04-24 | Lam Research Corporation | Clamped showerhead electrode assembly |
| KR200475462Y1 (en) * | 2009-03-27 | 2014-12-03 | 램 리써치 코포레이션 | Replaceable upper chamber section of plasma processing apparatus |
| US8272346B2 (en) * | 2009-04-10 | 2012-09-25 | Lam Research Corporation | Gasket with positioning feature for clamped monolithic showerhead electrode |
| US8603292B2 (en) * | 2009-10-28 | 2013-12-10 | Lam Research Corporation | Quartz window for a degas chamber |
| US9034142B2 (en) * | 2009-12-18 | 2015-05-19 | Novellus Systems, Inc. | Temperature controlled showerhead for high temperature operations |
| WO2012082854A2 (en) * | 2010-12-17 | 2012-06-21 | Mattson Technology, Inc. | Inductively coupled plasma source for plasma processing |
| US9437400B2 (en) * | 2012-05-02 | 2016-09-06 | Lam Research Corporation | Insulated dielectric window assembly of an inductively coupled plasma processing apparatus |
-
2011
- 2011-10-25 US US13/280,750 patent/US9947512B2/en active Active
-
2012
- 2012-10-19 CN CN201280052695.7A patent/CN104040024B/en active Active
- 2012-10-19 SG SG10201603198RA patent/SG10201603198RA/en unknown
- 2012-10-19 KR KR1020197024988A patent/KR102126644B1/en active Active
- 2012-10-19 JP JP2014538847A patent/JP6215217B2/en active Active
- 2012-10-19 WO PCT/US2012/061029 patent/WO2013062866A1/en not_active Ceased
- 2012-10-19 SG SG11201401748VA patent/SG11201401748VA/en unknown
- 2012-10-19 KR KR1020147014164A patent/KR102017356B1/en active Active
- 2012-10-24 TW TW101139341A patent/TWI543254B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5824605A (en) * | 1995-07-31 | 1998-10-20 | Lam Research Corporation | Gas dispersion window for plasma apparatus and method of use thereof |
| US20010010257A1 (en) * | 1998-12-30 | 2001-08-02 | Tuqiang Ni | Gas injection system for plasma processing |
| US20030070620A1 (en) * | 2001-10-15 | 2003-04-17 | Cooperberg David J. | Tunable multi-zone gas injection system |
| US20110056626A1 (en) * | 2009-09-10 | 2011-03-10 | Lam Research Corporation | Replaceable upper chamber parts of plasma processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20190102304A (en) | 2019-09-03 |
| KR102017356B1 (en) | 2019-09-02 |
| JP2014532990A (en) | 2014-12-08 |
| TWI543254B (en) | 2016-07-21 |
| KR102126644B1 (en) | 2020-06-25 |
| SG11201401748VA (en) | 2014-05-29 |
| US20130098554A1 (en) | 2013-04-25 |
| CN104040024A (en) | 2014-09-10 |
| KR20140090219A (en) | 2014-07-16 |
| US9947512B2 (en) | 2018-04-17 |
| TW201334060A (en) | 2013-08-16 |
| JP6215217B2 (en) | 2017-10-18 |
| CN104040024B (en) | 2015-09-30 |
| SG10201603198RA (en) | 2016-05-30 |
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