WO2013062284A1 - Solar cell module and method of preparing the same - Google Patents

Solar cell module and method of preparing the same Download PDF

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Publication number
WO2013062284A1
WO2013062284A1 PCT/KR2012/008710 KR2012008710W WO2013062284A1 WO 2013062284 A1 WO2013062284 A1 WO 2013062284A1 KR 2012008710 W KR2012008710 W KR 2012008710W WO 2013062284 A1 WO2013062284 A1 WO 2013062284A1
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Prior art keywords
solar cell
layer
cell module
electrode layer
conversion part
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PCT/KR2012/008710
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French (fr)
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Myoung Seok Sung
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Lg Innotek Co., Ltd.
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Publication of WO2013062284A1 publication Critical patent/WO2013062284A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Definitions

  • the embodiment relates to a solar cell module and a method of preparing the same.
  • a solar cell is spotlighted as a pollution-free energy source for solving the future energy problem because it rarely causes environmental pollution and has the semi-permanent life span and there exists infinite resources for the solar cell.
  • Solar cells may be defined as devices for converting light energy into electric energy by using a photovoltaic effect of generating electrons when light is incident onto a P-N junction diode.
  • the solar cell may be classified into a silicon solar cell, a compound semiconductor solar cell mainly including a group I-III-VI compound or a group III-V compound, a dye-sensitized solar cell, and an organic solar cell according to materials constituting the junction diode.
  • a solar cell made from CIGS (CuInGaSe), which is one of group I-III-VI Chalcopyrite-based compound semiconductors, represents superior light absorption, higher photoelectric conversion efficiency with a thin thickness, and superior electro-optic stability, so the CIGS solar cell is spotlighted as a substitute for a conventional silicon solar cell.
  • the quantity of electricity produced from the solar cell module is proportion to the quantity of light. Accordingly, in order to improve the efficiency of the solar cell module, the solar cell module must have the structure in which the quantity of the solar light incident into the light absorbing layer of the solar cell can be increased as much as possible. To this regard, various studies, in which protrusions are formed on the surface of the cover glass or an anti-reflective layer is coated on the surface of the cover glass, have been performed.
  • the embodiment provides a solar cell module representing improved photo-electric conversion efficiency.
  • a solar cell module including a plurality of solar cells including a back electrode layer, a light absorbing layer, and a front electrode layer that are sequentially formed on a support substrate, a light path conversion part provided between solar cells and including ceramic particles, and a polymer layer on the solar cells.
  • a method of preparing a solar cell module includes sequentially forming a back electrode layer, a light absorbing layer, and a front electrode layer that are sequentially formed on a support substrate, forming a plurality of solar cells by pattering the light absorbing layer and the front electrode layer, forming a light path conversion part including ceramic particles between the solar cells, and a polymer layer on the solar cells.
  • the light path conversion part is formed between the solar cells, so that the solar light incident into the light path conversion part can be output to a surrounding light absorbing layer. Accordingly, the quantity of light incident into the light absorbing layer can be increased, so that the solar cell module according to the embodiment can be represent improved photo-electric conversion efficiency.
  • FIGS. 1 to 8 are sectional views showing a method of preparing the solar cell module according to the embodiment.
  • FIGS. 1 to 8 are sectional views showing a method of preparing the solar cell module according to the embodiment.
  • a back electrode layer 200 is formed on a support substrate 100.
  • the back electrode layer 200 may be formed through a physical vapor deposition (PVD) scheme or a plating scheme.
  • PVD physical vapor deposition
  • the support substrate 100 has a plate shape, and supports a back electrode layer 200, a light absorbing layer 300, a buffer layer 400, a high resistance buffer layer 500, a front electrode layer 600, a connection wiring 700, a light path conversion part 800, and a polymer layer 900.
  • the support substrate 100 may be transparent, and may be rigid or flexible.
  • the support substrate 100 may include an insulator.
  • the support substrate 100 may include a glass substrate, a plastic substrate, or a metallic substrate.
  • the support substrate 100 may include a soda lime glass substrate.
  • the support substrate 100 may include a ceramic substrate including alumina, stainless steel, or polymer representing flexibility.
  • the back electrode layer 200 is provided on the support substrate 100.
  • the back electrode layer 200 is a conductive layer.
  • the back electrode layer 200 may include one selected from the group consisting of molybdenum (Mo), gold (Au), aluminum (Al), chrome (Cr), tungsten (W), and copper (Cu).
  • Mo represents a less thermal expansion coefficient difference from the support substrate 100 as compared with that of another element, so that Mo has a superior adhesive strength to prevent delamination from the support substrate 100.
  • the back electrode layer 200 includes a first perforation hole P1.
  • the back electrode layer 200 may be divided into a plurality of back electrodes 210, 220, ..., and N by the first perforation hole P1.
  • the light absorbing layer 300, the buffer layer 400, and the high resistance buffer layer 500 are formed on the back electrode layer 200.
  • the light absorbing layer 300 may be formed through various schemes such as a scheme of forming a Cu(In,Ga)Se 2 (CIGS) based-light absorbing layer 300 by simultaneously or separately evaporating Cu, In, Ga, and Se and a scheme of performing a selenization process after a metallic precursor film has been formed.
  • CIGS Cu(In,Ga)Se 2
  • the metallic precursor layer is formed on the back contact electrode 200 through a sputtering process employing a Cu target, an In target, or a Ga target. Thereafter, the metallic precursor layer is subject to the selenization process so that the Cu(In,Ga)Se 2 (CIGS) based-light absorbing layer 300 is formed.
  • a sputtering process employing a Cu target, an In target, or a Ga target.
  • the sputtering process employing the Cu target, the In target, and the Ga target and the selenization process may be simultaneously performed.
  • a CIS or a CIG light absorbing layer 300 may be formed through a sputtering process employing only Cu and In targets or only Cu and Ga targets and the selenization process.
  • the buffer layer 400 may be formed by depositing cadmium sulfide (CdS) on the light absorbing layer 300 through a chemical bath deposition (CBD).
  • CdS cadmium sulfide
  • the buffer layer 400 may include CdS, ZnS, InS, and In-Se-Zn(O, OH), but the embodiment is not limited thereto.
  • the thickness of the buffer layer 400 may be in the range of about 50 nm to about 150 nm, and the energy bandgap of the buffer layer 400 may be in the range of about 2.2 eV to about 2.4 eV.
  • the high resistance buffer layer 500 may include zinc oxide (i-ZnO) which is not doped with impurities.
  • the energy bandgap of the high resistance buffer layer 500 may be in the range of about 3.1 eV to about 3.3 eV.
  • the high resistance buffer layer 500 may be omitted.
  • a second perforation hole P2 is formed in the light absorbing layer 300, the buffer layer 400, and the high resistance buffer layer 500.
  • the second perforation hole P2 is formed through the light absorbing layer 300, the buffer layer 400, and the high resistance buffer layer 500.
  • the second perforation hole P2 may be mechanically formed, and the width of the second perforation hole P2 may be in the range of about 80 ⁇ m to about 200 ⁇ m, but the embodiment is not limited thereto.
  • a portion of the back electrode layer 200 is exposed by the second perforation hole P2.
  • the front electrode layer 600 is formed by laminating a transparent conductive material on the high resistance buffer layer 500.
  • the front electrode layer 600 may have the characteristic of the N type semiconductor.
  • the front electrode layer 600 may form an N type semiconductor layer together with the buffer layer 400 to form a PN junction with the light absorbing layer 300 which is a P type semiconductor layer.
  • the front electrode layer 600 may include Al-doped zinc oxide (AZO).
  • AZO Al-doped zinc oxide
  • the front electrode layer 600 may have a thickness of about 100 nm to about 500 nm.
  • the front electrode layer 600 may be formed through the RF sputtering process using the ZnO target, the reactive sputtering process using the Zn target or the organic metal chemical deposition process.
  • the front electrode layer 600 may be formed together with the connection wiring 700.
  • the connection wiring 700 electrically connects the back electrode layer 200 with the front electrode layer 600.
  • the front electrode layer 600 is perforated by third perforation holes P3.
  • the third perforation holes P3 may be mechanically formed to expose a portion of the back electrode layer 200.
  • the width of the third perforation hole P3 may be in the range of about 80 ⁇ m to about 200 ⁇ m, but the embodiment is not limited thereto.
  • the front electrode layer 600 may be divided into a plurality of front electrodes by the third through holes P3, thereby defining a plurality of solar cells C1, C2, C3, ..., and CN.
  • the light path conversion part 800 is formed between adjacent solar cells among the solar cells C1, C2, C3, ..., and CN.
  • light path conversion parts 800 may be formed in the third perforation holes P3.
  • the light path conversion part 800 selectively seals the back electrode layer 200 exposed through the third perforation hole P3 before forming the polymer layer 900, thereby preventing the back electrode layer 200 from being delaminated and improving the reliability.
  • the light path conversion part 800 may include one selected from the group consisting of ethylene-vinyl acetate (EVA), polycarbonate (PC), polyethylene (PE), polypropylene (PP), polyvinyl chloride (PVC), polyamide (PA), polyester (PET), and the combination thereof.
  • the light path conversion part 800 may include ethylene-vinyl acetate (EVA) or polycarbonate (PC), but the embodiment is not limited thereto.
  • the light path conversion part 800 includes ceramic particles 810.
  • the light path convert part 800 may include a plurality of ceramic particles 800, but the embodiment is not limited thereto.
  • the ceramic particles 810 may include at least one of TiO, Al 2 O 3 , SiO 2 , Ta 3 O 2 and ZrO. In more detail, the ceramic particles 810 may include TiO particles.
  • the diameter of the ceramic particles 810 may be in the range of about 50 nm to about 100 nm, but the embodiment is not limited thereto. If the diameter of the ceramic particles 810 is smaller than about 50 nm, the transmission property may be greater than the scatter-reflection property by the Rayleigh scattering. In addition, if the diameter of the ceramic particles 810 is greater than about 150 nm, the incidence of the solar light may be blocked due to the cohesion between the ceramic particles 810. In addition, the contents of the ceramic particles 810 may be in the range of about 10 wt% to about 30 wt%, but the embodiment is not limited thereto.
  • the scatter-reflection caused by the ceramic particles 810 may be slightly represented. If the contents of the ceramic particles 810 are equal to or greater than about 30 wt%, the incidence of the solar light may be blocked due to the cohesion between the ceramic particles 810.
  • the ceramic particles 810 may guide the solar light incident into the light path conversion part 800 to the light absorbing layer 300.
  • incident light L1 incident onto the light path conversion part 800 is reflected by the ceramic particles 810, so that reflected light L2 is output in all directions.
  • the reflected light L2 by the ceramic particles 810 may be incident onto the light absorbing layer 300 around the light path conversion part 800. Accordingly, the quantity of light incident onto the light absorbing layer 300 may be increased, so that the solar cell module according to the embodiment can represent improved power generation efficiency by the ceramic particles 810.
  • the light path conversion part 800 including the ceramic particles 810 may be formed by mixing the ceramic particles 810 and the dispersant with the polymer material constituting the light path conversion part 800, applying the liquid-phase mixture, and performing a curing process through the heat treatment.
  • the polymer layer 900 is formed on the solar cells C1, C2, ..., and CN.
  • the polymer layer 900 may directly make contact with the top surface of the front electrode layer 600 and the top surface of the light path conversion part 800.
  • the polymer layer 900 not only protects the solar cells C1, C2, ..., and CN from external physical shock and/or foreign matters, but improves the adhesive strength between the solar cells C1, C2, ..., and CN and the protective panel (not shown) on the solar cells C1, C2, ..., and CN.
  • the polymer layer 90 may include thermo-plastic polymer or thermo-setting polymer generally known to those skilled in the art.
  • the polymer layer 900 may include one selected from the group consisting of ethylene-vinyl acetate (EVA), polycarbonate (PC), polyethylene (PE), polypropylene (PP), polyvinyl chloride (PVC), polyamide (PA), polyester (PET), and the combination thereof.
  • the polymer layer 900 may include ethylene-vinyl acetate (EVA).
  • the polymer layer 900 may include the same material as that of the light path conversion part 800.
  • the polymer layer 900 may include ethylene-vinyl acetate (EVA), but the embodiment is not limited thereto.
  • the polymer layer 900 may include photo-curable polymer.
  • the photo-curable polymer may include epoxy-based resin or urethane-based resin.
  • any reference in this specification to “one embodiment,” “an embodiment,” “example embodiment,” etc. means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention.
  • the appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment.

Abstract

Disclosed are a solar cell module and a method of preparing the same. The solar cell module include a plurality of solar cells including a back electrode layer, a light absorbing layer, and a front electrode layer that are sequentially formed on a support substrate, a light path conversion part provided between solar cells and including ceramic particles, and a polymer layer on the solar cells.

Description

SOLAR CELL MODULE AND METHOD OF PREPARING THE SAME
The embodiment relates to a solar cell module and a method of preparing the same.
Recently, the requirement for new renewable energy and the interest of the new renewable energy have been more increased due to the serious environmental pollution and the lack of fossil fuel. In this regard, a solar cell is spotlighted as a pollution-free energy source for solving the future energy problem because it rarely causes environmental pollution and has the semi-permanent life span and there exists infinite resources for the solar cell.
Solar cells may be defined as devices for converting light energy into electric energy by using a photovoltaic effect of generating electrons when light is incident onto a P-N junction diode. The solar cell may be classified into a silicon solar cell, a compound semiconductor solar cell mainly including a group I-III-VI compound or a group III-V compound, a dye-sensitized solar cell, and an organic solar cell according to materials constituting the junction diode.
A solar cell made from CIGS (CuInGaSe), which is one of group I-III-VI Chalcopyrite-based compound semiconductors, represents superior light absorption, higher photoelectric conversion efficiency with a thin thickness, and superior electro-optic stability, so the CIGS solar cell is spotlighted as a substitute for a conventional silicon solar cell.
The quantity of electricity produced from the solar cell module is proportion to the quantity of light. Accordingly, in order to improve the efficiency of the solar cell module, the solar cell module must have the structure in which the quantity of the solar light incident into the light absorbing layer of the solar cell can be increased as much as possible. To this regard, various studies, in which protrusions are formed on the surface of the cover glass or an anti-reflective layer is coated on the surface of the cover glass, have been performed.
The embodiment provides a solar cell module representing improved photo-electric conversion efficiency.
According to the embodiment, there is provided a solar cell module including a plurality of solar cells including a back electrode layer, a light absorbing layer, and a front electrode layer that are sequentially formed on a support substrate, a light path conversion part provided between solar cells and including ceramic particles, and a polymer layer on the solar cells.
According to the embodiment, there is provided a method of preparing a solar cell module. The method includes sequentially forming a back electrode layer, a light absorbing layer, and a front electrode layer that are sequentially formed on a support substrate, forming a plurality of solar cells by pattering the light absorbing layer and the front electrode layer, forming a light path conversion part including ceramic particles between the solar cells, and a polymer layer on the solar cells.
As described above, according to the solar cell module of the embodiment, the light path conversion part is formed between the solar cells, so that the solar light incident into the light path conversion part can be output to a surrounding light absorbing layer. Accordingly, the quantity of light incident into the light absorbing layer can be increased, so that the solar cell module according to the embodiment can be represent improved photo-electric conversion efficiency.
FIGS. 1 to 8 are sectional views showing a method of preparing the solar cell module according to the embodiment.
In the description of the embodiments, it will be understood that when a substrate, a layer, a film or an electrode is referred to as being “on” or “under” another substrate, another layer, another film or another electrode, it can be “directly” or “indirectly” on the other substrate, the other layer, the other film, or the other electrode, or one or more intervening layers may also be present. Such a position of the layer has been described with reference to the drawings. The size of the elements shown in the drawings may be exaggerated for the purpose of explanation and may not utterly reflect the actual size.
FIGS. 1 to 8 are sectional views showing a method of preparing the solar cell module according to the embodiment.
Referring to FIG. 1, a back electrode layer 200 is formed on a support substrate 100. The back electrode layer 200 may be formed through a physical vapor deposition (PVD) scheme or a plating scheme.
The support substrate 100 has a plate shape, and supports a back electrode layer 200, a light absorbing layer 300, a buffer layer 400, a high resistance buffer layer 500, a front electrode layer 600, a connection wiring 700, a light path conversion part 800, and a polymer layer 900. The support substrate 100 may be transparent, and may be rigid or flexible.
The support substrate 100 may include an insulator. For example, the support substrate 100 may include a glass substrate, a plastic substrate, or a metallic substrate. In more detail, the support substrate 100 may include a soda lime glass substrate. Alternatively, the support substrate 100 may include a ceramic substrate including alumina, stainless steel, or polymer representing flexibility.
The back electrode layer 200 is provided on the support substrate 100. The back electrode layer 200 is a conductive layer. The back electrode layer 200 may include one selected from the group consisting of molybdenum (Mo), gold (Au), aluminum (Al), chrome (Cr), tungsten (W), and copper (Cu). Among them, Mo represents a less thermal expansion coefficient difference from the support substrate 100 as compared with that of another element, so that Mo has a superior adhesive strength to prevent delamination from the support substrate 100.
The back electrode layer 200 includes a first perforation hole P1. The back electrode layer 200 may be divided into a plurality of back electrodes 210, 220, …, and N by the first perforation hole P1.
Referring to FIG. 2, the light absorbing layer 300, the buffer layer 400, and the high resistance buffer layer 500 are formed on the back electrode layer 200.
For example, the light absorbing layer 300 may be formed through various schemes such as a scheme of forming a Cu(In,Ga)Se2 (CIGS) based-light absorbing layer 300 by simultaneously or separately evaporating Cu, In, Ga, and Se and a scheme of performing a selenization process after a metallic precursor film has been formed.
Regarding the details of the selenization process after the formation of the metallic precursor layer, the metallic precursor layer is formed on the back contact electrode 200 through a sputtering process employing a Cu target, an In target, or a Ga target. Thereafter, the metallic precursor layer is subject to the selenization process so that the Cu(In,Ga)Se2 (CIGS) based-light absorbing layer 300 is formed.
In addition, the sputtering process employing the Cu target, the In target, and the Ga target and the selenization process may be simultaneously performed.
In addition, a CIS or a CIG light absorbing layer 300 may be formed through a sputtering process employing only Cu and In targets or only Cu and Ga targets and the selenization process.
Thereafter, the buffer layer 400 may be formed by depositing cadmium sulfide (CdS) on the light absorbing layer 300 through a chemical bath deposition (CBD). For example, the buffer layer 400 may include CdS, ZnS, InS, and In-Se-Zn(O, OH), but the embodiment is not limited thereto. The thickness of the buffer layer 400 may be in the range of about 50 nm to about 150 nm, and the energy bandgap of the buffer layer 400 may be in the range of about 2.2 eV to about 2.4 eV.
In addition, zinc oxide is deposited on the buffer layer 400 through a sputtering process, thereby forming the high resistance buffer layer 500. The high resistance buffer layer 500 may include zinc oxide (i-ZnO) which is not doped with impurities. The energy bandgap of the high resistance buffer layer 500 may be in the range of about 3.1 eV to about 3.3 eV. In addition, the high resistance buffer layer 500 may be omitted.
Referring to FIG. 3, a second perforation hole P2 is formed in the light absorbing layer 300, the buffer layer 400, and the high resistance buffer layer 500. In other words, the second perforation hole P2 is formed through the light absorbing layer 300, the buffer layer 400, and the high resistance buffer layer 500. The second perforation hole P2 may be mechanically formed, and the width of the second perforation hole P2 may be in the range of about 80 ㎛ to about 200 ㎛, but the embodiment is not limited thereto. A portion of the back electrode layer 200 is exposed by the second perforation hole P2.
Referring to FIG. 4, the front electrode layer 600 is formed by laminating a transparent conductive material on the high resistance buffer layer 500.
The front electrode layer 600 may have the characteristic of the N type semiconductor. In this case, the front electrode layer 600 may form an N type semiconductor layer together with the buffer layer 400 to form a PN junction with the light absorbing layer 300 which is a P type semiconductor layer. For example, the front electrode layer 600 may include Al-doped zinc oxide (AZO). The front electrode layer 600 may have a thickness of about 100 nm to about 500 nm.
For example, the front electrode layer 600 may be formed through the RF sputtering process using the ZnO target, the reactive sputtering process using the Zn target or the organic metal chemical deposition process.
In addition, the front electrode layer 600 may be formed together with the connection wiring 700. In other words, when the transparent conductive material is laminated on the high resistance buffer layer 500, the transparent conductive material is gap-filled in the second perforation hole P2, thereby forming the connection wiring 700. Therefore, the connection wiring 700 electrically connects the back electrode layer 200 with the front electrode layer 600.
Referring to FIG. 5, the front electrode layer 600 is perforated by third perforation holes P3. The third perforation holes P3 may be mechanically formed to expose a portion of the back electrode layer 200. For example, the width of the third perforation hole P3 may be in the range of about 80 ㎛ to about 200 ㎛, but the embodiment is not limited thereto. The front electrode layer 600 may be divided into a plurality of front electrodes by the third through holes P3, thereby defining a plurality of solar cells C1, C2, C3, …, and CN.
Referring to FIG. 6, the light path conversion part 800 is formed between adjacent solar cells among the solar cells C1, C2, C3, …, and CN. In more detail, light path conversion parts 800 may be formed in the third perforation holes P3.
The light path conversion part 800 selectively seals the back electrode layer 200 exposed through the third perforation hole P3 before forming the polymer layer 900, thereby preventing the back electrode layer 200 from being delaminated and improving the reliability.
The light path conversion part 800 may include one selected from the group consisting of ethylene-vinyl acetate (EVA), polycarbonate (PC), polyethylene (PE), polypropylene (PP), polyvinyl chloride (PVC), polyamide (PA), polyester (PET), and the combination thereof. In more detail, the light path conversion part 800 may include ethylene-vinyl acetate (EVA) or polycarbonate (PC), but the embodiment is not limited thereto.
The light path conversion part 800 includes ceramic particles 810. In more detail, the light path convert part 800 may include a plurality of ceramic particles 800, but the embodiment is not limited thereto.
The ceramic particles 810 may include at least one of TiO, Al2O3, SiO2, Ta3O2 and ZrO. In more detail, the ceramic particles 810 may include TiO particles.
The diameter of the ceramic particles 810 may be in the range of about 50 nm to about 100 nm, but the embodiment is not limited thereto. If the diameter of the ceramic particles 810 is smaller than about 50 nm, the transmission property may be greater than the scatter-reflection property by the Rayleigh scattering. In addition, if the diameter of the ceramic particles 810 is greater than about 150 nm, the incidence of the solar light may be blocked due to the cohesion between the ceramic particles 810. In addition, the contents of the ceramic particles 810 may be in the range of about 10 wt% to about 30 wt%, but the embodiment is not limited thereto. If the contents of the ceramic particles 810 are less than about 10 wt%, the scatter-reflection caused by the ceramic particles 810 may be slightly represented. If the contents of the ceramic particles 810 are equal to or greater than about 30 wt%, the incidence of the solar light may be blocked due to the cohesion between the ceramic particles 810.
The ceramic particles 810 may guide the solar light incident into the light path conversion part 800 to the light absorbing layer 300. Referring to FIG. 7, incident light L1 incident onto the light path conversion part 800 is reflected by the ceramic particles 810, so that reflected light L2 is output in all directions. The reflected light L2 by the ceramic particles 810 may be incident onto the light absorbing layer 300 around the light path conversion part 800. Accordingly, the quantity of light incident onto the light absorbing layer 300 may be increased, so that the solar cell module according to the embodiment can represent improved power generation efficiency by the ceramic particles 810.
The light path conversion part 800 including the ceramic particles 810 may be formed by mixing the ceramic particles 810 and the dispersant with the polymer material constituting the light path conversion part 800, applying the liquid-phase mixture, and performing a curing process through the heat treatment.
Referring to FIG. 8, the polymer layer 900 is formed on the solar cells C1, C2, …, and CN. In more detail, the polymer layer 900 may directly make contact with the top surface of the front electrode layer 600 and the top surface of the light path conversion part 800.
The polymer layer 900 not only protects the solar cells C1, C2, …, and CN from external physical shock and/or foreign matters, but improves the adhesive strength between the solar cells C1, C2, …, and CN and the protective panel (not shown) on the solar cells C1, C2, …, and CN.
The polymer layer 90 may include thermo-plastic polymer or thermo-setting polymer generally known to those skilled in the art. For example, the polymer layer 900 may include one selected from the group consisting of ethylene-vinyl acetate (EVA), polycarbonate (PC), polyethylene (PE), polypropylene (PP), polyvinyl chloride (PVC), polyamide (PA), polyester (PET), and the combination thereof. In more detail, the polymer layer 900 may include ethylene-vinyl acetate (EVA). In addition, the polymer layer 900 may include the same material as that of the light path conversion part 800. For example, the polymer layer 900 may include ethylene-vinyl acetate (EVA), but the embodiment is not limited thereto. In addition, the polymer layer 900 may include photo-curable polymer. For example, the photo-curable polymer may include epoxy-based resin or urethane-based resin.
Any reference in this specification to “one embodiment,” “an embodiment,” “example embodiment,” etc., means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention. The appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment. Further, when a particular feature, structure, or characteristic is described in connection with any embodiment, it is submitted that it is within the purview of one skilled in the art to effect such feature, structure, or characteristic in connection with other ones of the embodiments.
Although embodiments have been described with reference to a number of illustrative embodiments thereof, it should be understood that numerous other modifications and embodiments can be devised by those skilled in the art that will fall within the spirit and scope of the principles of this disclosure. More particularly, various variations and modifications are possible in the component parts and/or arrangements of the subject combination arrangement within the scope of the disclosure, the drawings and the appended claims. In addition to variations and modifications in the component parts and/or arrangements, alternative uses will also be apparent to those skilled in the art.

Claims (14)

  1. A solar cell module comprising:
    a plurality of solar cells;
    a light path conversion part provided between solar cells and including ceramic particles; and
    a polymer layer on the solar cells.
  2. The solar cell module of claim 1, wherein the ceramic particles include at least one selected from the group consisting of TiO, Al2O3, SiO2, Ta3O2 and ZrO.
  3. The solar cell module of claim 1, wherein a diameter of each ceramic particle is in a range of 50 nm to 100 nm.
  4. The solar cell module of claim 1, wherein the ceramic particles have contents of 10 weight% to 30 weight%.
  5. The solar cell module of claim 1, wherein the light path conversion part includes ethylene-vinyl acetate (EVA) or polycarbonate (PC).
  6. The solar cell module of claim 1, wherein the light path conversion part and the polymer layer include a same material.
  7. The solar cell module of claim 1, wherein each solar cell includes a support substrate, a back electrode layer, a light absorbing layer, and a front electrode layer that are sequentially stacked on each other.
  8. The solar cell module of claim 7, wherein the ceramic particles guide a solar light, which is incident onto the light path conversion part, to the light absorbing layer.
  9. The solar cell module of claim 7, wherein the light path conversion part passes through the light absorbing layer and the front electrode layer.
  10. A method of preparing a solar cell module, the method comprising:
    forming a plurality of solar cells;
    forming a light path conversion part including ceramic particles between the solar cells; and
    forming a polymer layer on the solar cells.
  11. The method of claim 10, wherein the forming of the solar cells comprises:
    sequentially forming a back electrode layer, a light absorbing layer, and a front electrode layer on a support substrate; and
    patterning the light absorbing layer and the front electrode layer.
  12. The method of claim 11, wherein, in the patterning of the light absorbing layer and the front electrode layer, a third perforation hole is formed through the light absorbing layer and the front electrode layer.
  13. The method of claim 12, wherein the light path conversion part is formed in the third perforation hole.
  14. The method of claim 11, wherein the ceramic particles guide a solar light incident onto the light path conversion part to the light absorbing layer.
PCT/KR2012/008710 2011-10-26 2012-10-23 Solar cell module and method of preparing the same WO2013062284A1 (en)

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Cited By (1)

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KR20100109318A (en) * 2009-03-31 2010-10-08 엘지이노텍 주식회사 Solar cell and method of fabricating the same
KR20100109319A (en) * 2009-03-31 2010-10-08 엘지이노텍 주식회사 Solar cell and method of fabricating the same
US20110180134A1 (en) * 2010-01-22 2011-07-28 Tae Hoon Kim Solar Cell and Method for Manufacturing the Same

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KR20100109318A (en) * 2009-03-31 2010-10-08 엘지이노텍 주식회사 Solar cell and method of fabricating the same
KR20100109319A (en) * 2009-03-31 2010-10-08 엘지이노텍 주식회사 Solar cell and method of fabricating the same
US20110180134A1 (en) * 2010-01-22 2011-07-28 Tae Hoon Kim Solar Cell and Method for Manufacturing the Same

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112133783A (en) * 2020-08-12 2020-12-25 重庆神华薄膜太阳能科技有限公司 Photovoltaic power generation device and manufacturing method thereof

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