WO2013058640A3 - Method for the extraction, verification and counting of dialyzed leukocyte extract originating from shark spleen in order to obtain potentialized transfer factor, specifically designed for use as treatment against the disease known as asthma - Google Patents

Method for the extraction, verification and counting of dialyzed leukocyte extract originating from shark spleen in order to obtain potentialized transfer factor, specifically designed for use as treatment against the disease known as asthma Download PDF

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Publication number
WO2013058640A3
WO2013058640A3 PCT/MX2012/000091 MX2012000091W WO2013058640A3 WO 2013058640 A3 WO2013058640 A3 WO 2013058640A3 MX 2012000091 W MX2012000091 W MX 2012000091W WO 2013058640 A3 WO2013058640 A3 WO 2013058640A3
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WO
WIPO (PCT)
Prior art keywords
asthma
extraction
order
disease known
potentialized
Prior art date
Application number
PCT/MX2012/000091
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Spanish (es)
French (fr)
Other versions
WO2013058640A2 (en
Inventor
Héctor Manuel ZEPEDA LOPEZ
Original Assignee
Zepeda Lopez Hector Manuel
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Publication date
Application filed by Zepeda Lopez Hector Manuel filed Critical Zepeda Lopez Hector Manuel
Publication of WO2013058640A2 publication Critical patent/WO2013058640A2/en
Publication of WO2013058640A3 publication Critical patent/WO2013058640A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41708—Emitter or collector electrodes for bipolar transistors
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61P—SPECIFIC THERAPEUTIC ACTIVITY OF CHEMICAL COMPOUNDS OR MEDICINAL PREPARATIONS
    • A61P11/00—Drugs for disorders of the respiratory system
    • A61P11/06—Antiasthmatics
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61P—SPECIFIC THERAPEUTIC ACTIVITY OF CHEMICAL COMPOUNDS OR MEDICINAL PREPARATIONS
    • A61P37/00—Drugs for immunological or allergic disorders
    • A61P37/02—Immunomodulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H01L29/0817—Emitter regions of bipolar transistors of heterojunction bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42304—Base electrodes for bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
    • H01L29/66318—Heterojunction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material

Abstract

A leukocyte extract containing polypeptides equal to or less than 10,000 Daltons originating from shark spleen and the use thereof as a drug in the treatment of the disease known as asthma comprises, furthermore, a method for the extraction and processing of dialyzable leukocyte extract from sharks, in order to obtain a drug based on leukocyte‑cell extract for treating symptoms of the disease known by the name "asthma".
PCT/MX2012/000091 2011-10-20 2012-09-20 Method for the extraction, verification and counting of dialyzed leukocyte extract originating from shark spleen in order to obtain potentialized transfer factor, specifically designed for use as treatment against the disease known as asthma WO2013058640A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161549316P 2011-10-20 2011-10-20
US61/549,316 2011-10-20

Publications (2)

Publication Number Publication Date
WO2013058640A2 WO2013058640A2 (en) 2013-04-25
WO2013058640A3 true WO2013058640A3 (en) 2013-06-20

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/MX2012/000091 WO2013058640A2 (en) 2011-10-20 2012-09-20 Method for the extraction, verification and counting of dialyzed leukocyte extract originating from shark spleen in order to obtain potentialized transfer factor, specifically designed for use as treatment against the disease known as asthma

Country Status (2)

Country Link
US (1) US9761678B2 (en)
WO (1) WO2013058640A2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201312799A (en) * 2011-09-02 2013-03-16 Syue-Min Li Light emitting diode device
US9461153B2 (en) 2011-11-16 2016-10-04 Skyworks Solutions, Inc. Devices and methods related to a barrier for metallization of a gallium based semiconductor
US9847407B2 (en) 2011-11-16 2017-12-19 Skyworks Solutions, Inc. Devices and methods related to a gallium arsenide Schottky diode having low turn-on voltage
JP6170300B2 (en) * 2013-01-08 2017-07-26 住友化学株式会社 Nitride semiconductor devices
US20160141220A1 (en) * 2014-11-18 2016-05-19 Sumitomo Electric Industries, Ltd. Hetero-bipolar transistor and method for producing the same
US9905678B2 (en) 2016-02-17 2018-02-27 Qorvo Us, Inc. Semiconductor device with multiple HBTs having different emitter ballast resistances
JP2018010896A (en) * 2016-07-11 2018-01-18 株式会社村田製作所 Heterojunction bipolar transistor
US11069678B2 (en) * 2017-08-29 2021-07-20 Qorvo Us, Inc. Logic gate cell structure
CN111354790A (en) * 2018-12-24 2020-06-30 曾庆刚 Novel gallium arsenide heterojunction transistor structure and preparation method
US11862717B2 (en) * 2021-08-24 2024-01-02 Globalfoundries U.S. Inc. Lateral bipolar transistor structure with superlattice layer and method to form same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080081076A1 (en) * 2006-09-29 2008-04-03 Lisonbee David A Nanofraction immune modulators, preparations and compositions including the same, and associated methods
MX2008009296A (en) * 2008-07-18 2010-01-18 Carlos Adolfon Perez De La Mora Optimised process for the obtention of dialyzable leukocyte extract, containing peptides with molecular weight equal to or lower than 10,000 daltons, from crocodile lymphoid tissue and the preparation thereof in an oral and/or injectable pharmaceutic
ES2353208T3 (en) * 2002-02-28 2011-02-28 Luis Antonio Calzada Nova DIALIZED LEUCOCITE EXTRACT FOR THE TREATMENT OF INFECTIOUS DISEASES IN ANIMALS.

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6737684B1 (en) * 1998-02-20 2004-05-18 Matsushita Electric Industrial Co., Ltd. Bipolar transistor and semiconductor device
US6320212B1 (en) * 1999-09-02 2001-11-20 Hrl Laboratories, Llc. Superlattice fabrication for InAs/GaSb/AISb semiconductor structures
JP2004521485A (en) 2000-11-27 2004-07-15 コピン コーポレーション Bipolar transistor with lattice matched base layer
US7345327B2 (en) * 2000-11-27 2008-03-18 Kopin Corporation Bipolar transistor
US7019383B2 (en) 2003-02-26 2006-03-28 Skyworks Solutions, Inc. Gallium arsenide HBT having increased performance and method for its fabrication
CA2529595C (en) * 2004-07-01 2013-02-26 Nippon Telegraph And Telephone Corporation Heterostructure bipolar transistor
US20090014061A1 (en) 2007-07-10 2009-01-15 The Board Of Trustees Of The Leland Stanford Junior University GaInNAsSb solar cells grown by molecular beam epitaxy
US7656002B1 (en) * 2007-11-30 2010-02-02 Rf Micro Devices, Inc. Integrated bipolar transistor and field effect transistor
US20110232730A1 (en) * 2010-03-29 2011-09-29 Solar Junction Corp. Lattice matchable alloy for solar cells

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2353208T3 (en) * 2002-02-28 2011-02-28 Luis Antonio Calzada Nova DIALIZED LEUCOCITE EXTRACT FOR THE TREATMENT OF INFECTIOUS DISEASES IN ANIMALS.
US20080081076A1 (en) * 2006-09-29 2008-04-03 Lisonbee David A Nanofraction immune modulators, preparations and compositions including the same, and associated methods
MX2008009296A (en) * 2008-07-18 2010-01-18 Carlos Adolfon Perez De La Mora Optimised process for the obtention of dialyzable leukocyte extract, containing peptides with molecular weight equal to or lower than 10,000 daltons, from crocodile lymphoid tissue and the preparation thereof in an oral and/or injectable pharmaceutic

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
BERRON-PEREZ RENATO ET AL.: "Indications, usage, and dosage of the transfer factor..", REVISTA ALERGIA MEXICO, vol. 54, no. 4, 30 June 2007 (2007-06-30), TECAMACHALCO, PUEBLA, MEXICO, pages 134 - 139 *
GROHN P: "TRANSFER FACTOR IN CHRONIC AND RECURRENT RESPIRATORY TRACT INFECTIONS IN CHILDREN.", ACTA PAEDIATRICA SCANDINAVICA, vol. 66, no. 2, 30 November 1976 (1976-11-30), pages 211 - 217, XP055072904 *
KHAN A ET AL.: "The usefulness of transfer factor in asthma associated with frequentinfections..", ANNALS OF ALLERGY, vol. 40, no. 4, 31 March 1978 (1978-03-31), pages 229 - 232 *

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US9761678B2 (en) 2017-09-12
US20130099287A1 (en) 2013-04-25

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