WO2013058506A2 - Polyimide light-sensitive resin composition for oled - Google Patents

Polyimide light-sensitive resin composition for oled Download PDF

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Publication number
WO2013058506A2
WO2013058506A2 PCT/KR2012/008362 KR2012008362W WO2013058506A2 WO 2013058506 A2 WO2013058506 A2 WO 2013058506A2 KR 2012008362 W KR2012008362 W KR 2012008362W WO 2013058506 A2 WO2013058506 A2 WO 2013058506A2
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WIPO (PCT)
Prior art keywords
resin composition
oled
photosensitive resin
bis
polyimide
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PCT/KR2012/008362
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French (fr)
Korean (ko)
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WO2013058506A3 (en
Inventor
김동명
김병욱
윤혁민
김진우
황치용
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주식회사 동진쎄미켐
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Priority to CN201280051559.6A priority Critical patent/CN103917916B/en
Publication of WO2013058506A2 publication Critical patent/WO2013058506A2/en
Publication of WO2013058506A3 publication Critical patent/WO2013058506A3/en

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins

Definitions

  • the present invention relates to a polyimide photosensitive resin composition for OLED, and more particularly, to a polyimide photosensitive resin, which is suitable for forming an organic insulating film of an OLED by using a polyimide precursor that is easy to control molecular weight and solubility, and particularly a sensitivity is remarkably improved.
  • a polyimide photosensitive resin composition for OLED and more particularly, to a polyimide photosensitive resin, which is suitable for forming an organic insulating film of an OLED by using a polyimide precursor that is easy to control molecular weight and solubility, and particularly a sensitivity is remarkably improved.
  • OLEDs organic light emitting diodes
  • AMOLEDs active matrix OLEDs
  • an OLED element typically includes an organic insulating film, and a polyimide photosensitive resin composition is generally used for forming the organic insulating film.
  • the polyimide precursor used in the conventional polyimide photosensitive resin composition was applied with GMA protecting technology, but the polyimide precursor protected with GMA was difficult to control the molecular weight and solubility, and the yield reduction due to gelation was a problem. Because of the low level, there was an urgent need for improvement.
  • the present invention is suitable for forming an organic insulating film of the OLED using a polyimide precursor that is easy to control the molecular weight and solubility, in particular a polyimide photosensitive resin composition that can significantly improve the sensitivity, It is an object of the present invention to provide an OLED substrate including a pattern forming method of an OLED using the same and a cured product of the polyimide photosensitive resin composition.
  • the present invention in the photosensitive resin composition for OLED,
  • a resin comprising i) a polyimide precursor represented by Formula 1 below, and ii) poly hydroxy styrene;
  • polyimide photosensitive resin composition for OLED comprising:
  • X is a tetravalent organic group
  • Y is a divalent organic group
  • R is independently epoxy cyclohexyl methyl methacrylate (ECMMA) or methylglycidyl methacrylate (MGMA)
  • n is an integer of 3-100000.
  • a resin comprising i) 40-90% by weight of polyimide precursor represented by Formula 1, ii) 10-60% by weight of poly hydroxy styrene;
  • the polyimide photosensitive resin composition for OLED containing the solvent so that solid content of the whole polyimide photosensitive resin composition may be 5 to 50 weight%.
  • the present invention also provides an OLED substrate comprising a cured product of the polyimide photosensitive resin composition for OLED.
  • the present invention provides a pattern forming method of an OLED substrate using the polyimide photosensitive resin composition for OLED.
  • the polyimide photosensitive resin composition for OLEDs according to the present invention is suitable for forming an organic insulating film of an OLED by using a polyimide precursor that is easy to control molecular weight and solubility, and in particular, can significantly improve sensitivity.
  • Polyimide photosensitive resin composition for an OLED of the present invention is a resin comprising a) i) a polyimide precursor represented by the general formula (1), ii) polyhydroxy styrene; b) 1,2-quinonediazide compounds; c) crosslinking agents; And d) a solvent.
  • X is a tetravalent organic group
  • Y is a divalent organic group
  • R is independently epoxy cyclohexyl methyl methacrylate (ECMMA) or methylglycidyl methacrylate (MGMA)
  • n is an integer of 3-100000.
  • the polyimide precursor represented by Chemical Formula 1 used in the present invention may be prepared through the process of Scheme 1 below. More preferably, in Scheme 1, X is 2,2-bis (3,4-anhydrodicarboxyphenyl) Hexafluoropropane (6FDA, Formula 2), 5- (2,5-Dioxotetrahydrofuryl) -3-methyl-3-cyclohexene-1, A tetravalent organic group derived from 2-dicarboxylic Anhydride (DOCDA, Formula 3), or 2,3,3 ', 4'-Biphenyl tetracarboxylic dianhydride (a-BPDA, Formula 4), Y is a 4,4'-diamino -3,3'-dimethyl-diphenylmethane (DADM, formula 5), 2,2-Bis (3-amino-4-hydroxyphenyl) -hexafluoropropane (Bis-APAF, formula 6), or 1,3-Bis (3- A di
  • the polyimide precursor converts the protecting portion from conventional GMA to epoxy cyclohexyl methyl methacrylate (ECMMA) or methylglycidyl methacrylate (MGMA) to facilitate the control of molecular weight and solubility, and to reduce the yield decrease due to gelation, It improves the sensitivity of the mid photosensitive resin composition.
  • the molecular weight of the polyimide precursor is preferably 3000-10000, preferably 3500-7000. If it is in the above range, solubility control, yield and sensitivity can be further enhanced.
  • the content of the polyimide precursor is preferably used in 40-90% by weight of a) resin used in the present invention. When in the above range, it is possible to further improve the developability, heat resistance and sensitivity.
  • polyhydroxystyrene used as the resin of the present invention is preferably used with a molecular weight of 4000 to 20000, the content is preferably used in 10-60% by weight of the resin used in the present invention.
  • a molecular weight of 4000 to 20000 the content is preferably used in 10-60% by weight of the resin used in the present invention.
  • a) resin of the present invention may further include a novolak resin in addition to the polyimide precursor and polyhydroxy styrene. It is preferable to use a novolak resin prepared through the step polymerization.
  • the novolak resin prepared through the step polymerization may be prepared by condensing an aldehyde and a substituted phenol.
  • the aldehyde is formaldehyde, etc.
  • substituted phenols are ortho-, meta-, para-cresol, 2,4-xylenol, 2,5-xylenol, 3,4-xylenol, 3,5- Xylenol, 2,3,5-trimethylphenol, or mixtures thereof.
  • the polystyrene reduced weight average molecular weight of the novolak resin prepared through the step polymerization is preferably 3,000 to 30,000, more preferably 3,000 to 20,000.
  • a) resin of the present invention comprises a novolak resin
  • the a) resin contains 40-85 wt% of polyimide precursor, 10-55 wt% of polyhydroxystyrene, and 1-20 wt% of novolak resin. good.
  • the 1,2-quinonediazide compound of b) used in the present invention is used as a photosensitive compound.
  • the 1,2-quinonediazide compound may be used as long as it can be applied to a photosensitive composition used for forming an organic insulating film of a known OLED, and is obtained by, for example, reacting a phenol compound with a naphthoquinone diazide sulfonic acid halogen compound. Can be used.
  • the 1,2-quinonediazide compound is 1,2-quinonediazide 4-sulfonic acid ester, 1,2-quinonediazide 5-sulfonic acid ester, 1,2-quinonediazide 6-sulfonic acid ester, or the like. Can be used.
  • the b) 1,2-quinonediazide compound is preferably included 5 to 50 parts by weight based on 100 parts by weight of the resin of a). If the content is less than 5 parts by weight, the difference in solubility of the exposed and non-exposed parts may be difficult to form. If the content exceeds 50 parts by weight, unreacted 1,2-quinonediazide compound may be used when irradiated with light for a short time. It may be difficult to develop due to the excessively low solubility in the aqueous alkali solution being a developer.
  • the crosslinking agent of c) used in the present invention functions to form a crosslinked structure with the resin of a), and preferably, the crosslinking agent is a melanin crosslinking agent.
  • condensation products of urea and formaldehyde condensation products of melamine and formaldehyde, methylol urea alkyl ethers and methylol melamine alkyl ethers obtained from alcohols, and the like can be used.
  • monomethylol urea, dimethylol urea, or the like may be used as a condensation product of the urea and formaldehyde.
  • Hexamethylol melamine may be used as the condensation product of melamine and formaldehyde, and other condensation products of melamine and formaldehyde may be used.
  • the methylol urea alkyl ethers are obtained by reacting a condensation product of urea with formaldehyde with alcohols in part or all of the methylol groups, and specific examples thereof include monomethyl urea methyl ether, dimethyl urea methyl ether, and the like. Can be used.
  • the methylol melamine alkyl ethers are obtained by reacting a condensation product of melamine and formaldehyde with alcohols in part or all of methylol groups, and specific examples thereof include hexamethylolmelamine hexamethyl ether and hexamethylolmelamine hexabutyl ether. Etc. can be used.
  • the compound of the structure where the hydrogen atom of the amino group of melamine was substituted by the hydroxy methyl group and the methoxy methyl group the compound of the structure where the hydrogen atom of the amino group of melamine was substituted by the butoxy methyl group and the methoxy methyl group, etc. can also be used, Especially methylol Preference is given to using melamine alkyl ethers.
  • the melamine-based crosslinking agent is preferably included in an amount of 1 to 30 parts by weight, more preferably 1 to 20 parts by weight, based on 100 parts by weight of the resin of a). If the content is less than 1 part by weight, there is a problem that the photospeed is lowered, and if it exceeds 30 parts by weight, there is a problem that the storage stability is lowered.
  • the solvent of d) used in the present invention serves to form a uniform pattern profile by preventing the flatness and coating stain of the polyimide photosensitive resin composition.
  • the solvent may be alcohol such as methanol, ethanol, benzyl alcohol, hexyl alcohol; Ethylene glycol alkyl ether acetates such as ethylene glycol methyl ether acetate and ethylene glycol ethyl ether acetate; Ethylene glycol alkyl ether propionates such as ethylene glycol methyl ether propionate and ethylene glycol ethyl ether propionate; Ethylene glycol monoalkyl ethers such as ethylene glycol methyl ether and ethylene glycol ethyl ether; Diethylene glycol alkyl ethers such as diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol methyl ethyl ether; Propylene glycol alkyl ether acetates such as propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate, and prop
  • the solvent is a solvent in which gamma butyrolactone and propylene glycol methyl ether acetate (PGMEA) are mixed in a weight ratio of 10-90: 10-90, respectively.
  • PMEA propylene glycol methyl ether acetate
  • the solvent is preferably included so that the solid content of the entire photosensitive resin composition is 5 to 50% by weight, more preferably 15 to 40% by weight. If the solid content of the total composition is less than 10% by weight, there is a problem that the coating thickness is thin, coating flatness is lowered, and when the content of the solid content exceeds 50% by weight, the coating thickness becomes thick, and the coating equipment is impaired during coating. There is a problem that can be.
  • the photosensitive resin composition of this invention can also be applied also as a negative photosensitive resin composition which contains a positive photosensitive resin composition and a photo-acid generator fundamentally.
  • the photoacid generator is not particularly limited as long as it is a photoacid generator used in the conventional photosensitive resin composition, and preferably, an ionic photoacid generator such as a sulfonium salt and an iodonium salt, a sulfonydiazomethane series, and an N-sulfonyloxyimide series , Benzoin sulfonate type, nitrobenzyl sulfonate type, sulfone type, glyoxime type, triazine type or the like can be used.
  • the sulfonium salt is a salt of a sulfonium cation and a sulfonate (sulfoic acid anion), and the sulfonium cation includes triphenolsulfonium, (4-tert-butoxyphenyl) diphenylsulfonium, and bis (4 -tert-butoxyphenyl) phenylsulfonium, 4-methylphenyldiphenylsulfonium, tris (4-methylphenylsulfonium), 4-tert-butylphenyldiphenylsulfonium, tris (4-tert-butylphenyl) sulfonium , Tris (4-tert-butoxyphenyl) sulfonium, (3-tert-butoxyphenyl) diphenylsulfonium, bis (3-tert-butoxyphenyl) phenylsulfonium, tris (3-tert-butoxy Ph
  • the sulfonate is trifluoromethanesulfonate.
  • the iodonium salt is a salt of an iodonium cation and a sulfonate (sulfoic acid anion), and the iodonium cation is diphenyl iodonium, bis (4-tert-butylphenyl) iodonium, and 4-tert-butoxyphenylphenyl.
  • Iodonium or 4-methoxyphenylphenyl iodonium and the like and the sulfonate is trifluoromethanesulfonate nonafluorobutasulfonate heptadecafluorooctanesulfonate, 2,2,2-trifluoro Roethanesulfonate, pentafluorobenzenesulfonate, 4-trifluoromethylbenzenesulfonate, 4-fluorobenzenesulfonate, toluenesulfonate benzenesulfonate, naphthalenesulfonate, camphorsulfonate, octanesulfonate, dode Silbenzenesulfonate, butanesulfonate, or methanesulfonate.
  • sulfonyl diazomethane-based photoacid generators examples include bis (ethylsulfonyl) diazomethane, bis (1-methylpropylsulfonyl) diazomethane, bis (2-methylpropofylsulfonyl) diazomethane and bis (1).
  • 1-dimethylethylsulfonyl) diazomethane bis (cyclohexylsulfonyl) diazomethane, bis (perfluroloisopropylsulfonyl) diazomethane, bis (phenylsulfonyl) diazomethane, bis (4 -Methylphenylsulfonyl) diazo methane, bis (2,4-dimethylphenylsulfonyl) diazomethane, bis (2-naphthylsulfonyl) diazomethane, 4-methylphenylsulfonylbenzoyldiazomethane, tert-butylcar Bonyl-4-methylphenylsulfonyldiazomethane, 2-naphthylsulfonylbenzoyldiazomethane, 4-methylphenylsulfonyl-2-naphthoyl
  • N-sulfonyloxyimide-based photoacid generator examples include succinic acid imide, naphthalenedicarboxylic acid imide, phthalic acid imide, cyclohexyldicarboxylic acid imide, 5-norbornene-2,3-dicarboxyl Imide skeletons such as acid imides or 7-oxabicyclo [2,2,1] -5-heptene-2,3-dicarboxylic acid imides, trifluoromethanesulfonate, and nonafluorobutanesulfo Nate, Heptadecafluorooctanesulfonate, 2,2,2-trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-trifluorofluoromethylbenzenesulfonate, 4-fluorobenzenesulfonate, toluene Sulfonates, benzenesulfonates, na
  • benzoin sulfonate-based photoacid generator examples include benzointosylate, benzoin mesylate, or benzoin butanesulfonate.
  • the nitrobenzylsulfonate-based photoacid generator includes 2,4-dinitrobenzylsulfonate, 2-nitrobenzylsulfonate, or 2,6-dinitrobenzylsulfonate, and the like.
  • the sulfone-based photoacid generators include bis (phenylsulfonyl) methane, bis (4-methylphenylsulfonyl) methane, bis (2-naphthylsulfonyl) methane, 2,2-bis (phenylsulfonyl) propane, 2,2 -Bis (4-methylphenylsulfonyl) propane, 2,2-bis (2-naphthylsulfonyl) propane, 2-methyl-2- (p-toluenesulfonyl) propiononeone, 2- (cyclohexylcarbonyl) -2- (p-toluenesulfonyl) propane or 2,4-dimethyl-2- (p-toluenesulfonyl) pentan-3-one and the like.
  • Examples of the glyoxime-based photoacid generators include bis-o- (p-toluenesulfonyl) - ⁇ -dimethylglyoxime, bis-o- (p-toluenesulfonyl) - ⁇ -dimethylglyoxime and bis-o- (p -Toluenesulfonyl) - ⁇ -disotlohexylglyoxime, bis-o- (p-toluenesulfonyl) -2,3-pentanedioneglyoxime, bis-o- (p-toluenesulfonyl) -2- Methyl-3,4-pentanedioneglyoxime, bis-o- (n-butanesulfonyl) - ⁇ -dimethylglyoxime, bis-o- (n-butanesulfonyl) - ⁇ -dimethylglyoxime, bis-o
  • the triazine-based photoacid generator includes PDM-Triazine, WS-Triazine, PDM-Triazine, Dimethoxy-Triazine, MP-Triazine, TFE-Triazine, or TME-Triazine (Sam Chemical).
  • the photoacid generator is preferably included in 1 to 20 parts by weight, more preferably 1 to 10 parts by weight with respect to 100 parts by weight of the resin of a). If the content is less than 1 part by weight, there is a problem that the photospeed is reduced, and if it exceeds 20 parts by weight, outgassing and storage stability may be reduced.
  • the photosensitive resin composition of this invention which consists of such components can further contain surfactant as needed.
  • the said surfactant functions to improve the adhesiveness, applicability
  • the surfactant may be polyoxyethylene octylphenyl ether, polyoxyethylene nonylphenyl ether, F171, F172, F173 (trade name: Japan Nippon Ink Company), FC430, FC431 (trade name: Sumitomo Triem, Inc.), or KP341 (trade name: Shinwol) Chemical industry) and the like.
  • the surfactant is preferably included in an amount of 0.0001 to 2 parts by weight based on 100 parts by weight of the resin of a), and when the content is in the above range, it is more preferable in improving the coating property and developability of the photosensitive composition.
  • the solid content concentration of the polyimide photosensitive resin composition for OLEDs of the present invention comprising the above components is preferably 10 to 50 parts by weight, and the composition having a solid content in the above range is filtered through a 0.1-0.2 ⁇ m Millipore filter or the like. It is good to use.
  • the present invention also provides an OLED substrate comprising a cured product of the polyimide photosensitive resin composition for OLED and a pattern forming method of the OLED substrate using the polyimide photosensitive resin composition for OLED.
  • the pattern formation method of the OLED substrate of this invention is a method of forming the pattern of an OLED substrate using the photosensitive resin composition, It is characterized by using the said polyimide photosensitive resin composition for OLED.
  • the substrate is an AMOLED substrate.
  • a method of forming a pattern of an OLED substrate using the polyimide photosensitive resin composition for OLED is as follows.
  • the polyimide photosensitive resin composition for OLED of this invention is apply
  • the prebaking is preferably carried out for 1-15 minutes at a temperature of 80-120 °C.
  • the developer is preferably an aqueous alkali solution, specifically, inorganic alkalis such as sodium hydroxide, potassium hydroxide and sodium carbonate; Primary amines such as ethylamine and n-propylamine; Secondary amines such as diethylamine and n-propylamine; Tertiary amines such as trimethylamine, methyldiethylamine, dimethylethylamine and triethylamine; Alcohol amines such as dimethylethanolamine, methyl diethanolamine and triethanolamine; Or an aqueous solution of a quaternary ammonium salt such as tetramethylammonium hydroxide or tetraethylammonium hydroxide can be used.
  • the developer is used by dissolving the alkaline compound at a concentration of 0.1-10% by weight, and an appropriate amount of a water-soluble organic solvent such as methanol and ethanol and a surfactant may be added.
  • the pattern is 30-90 minutes at a temperature of 130-250 °C by a heating apparatus such as an oven The heat treatment can give a final pattern.
  • the polyimide photosensitive resin composition for OLEDs according to the present invention is suitable for forming an organic insulating film of an OLED by using a polyimide precursor having easy solubility control, and is particularly suitable for application to an OLED manufacturing process by remarkably improving sensitivity.
  • the prepared polyimide precursor 20 parts by weight of polyhydroxystyrene, 20 parts by weight of 1,2-quinonediazide compound and 5 parts by weight of hexamethylolmelamine were mixed with a melamine crosslinking agent.
  • the mixture was dissolved in a solvent in which gamma butyrolactone and PGMEA were mixed at a weight ratio of 50:50 so that the solid content of the mixture was 20% by weight, and then filtered through a 0.2 ⁇ m millipore filter for polyimide photosensitive resin for OLED.
  • the composition was prepared.
  • the polyimide photosensitive resin composition for OLED was prepared in the same manner as in Example 1, except that 10 g of ECMMA was used to prepare the polyimide precursor in Example 1.
  • Example 1 Except for using MGMA 10 g instead of ECMMA in Example 1 was prepared in the same manner as in Example 1 polyimide photosensitive resin composition for OLED.
  • the polyimide photosensitive resin composition for OLED was manufactured in the same manner as in Example 1, except that 3 parts by weight of triazine-based TME-Triazine was further used as a photoacid generator in Example 1.
  • the polyimide photosensitive resin composition for OLED was manufactured in the same manner as in Example 1, except that 8 g of GMA was used instead of ECMMA in Example 1.
  • the polyimide photosensitive resin composition for OLED was manufactured in the same manner as in Example 1, except that 10 g of GMA was used instead of ECMMA in Example 1.
  • the polyimide photosensitive resin composition for OLED of Examples 1 to 4 prepared according to the present invention was excellent in both solubility and sensitivity at the same time, from the above results, polyimide photosensitive for OLED according to the present invention It was found that the resin composition can obtain more excellent results when applied to the OLED manufacturing process, especially the AMOLED manufacturing process.
  • the polyimide photosensitive resin composition for OLEDs according to the present invention is suitable for forming an organic insulating film of an OLED by using a polyimide precursor that is easy to control molecular weight and solubility, and in particular, can significantly improve sensitivity.

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Electroluminescent Light Sources (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)

Abstract

The present invention relates to a polyimide light-sensitive resin composition for an OLED, and, more particularly, relates to a polyimide light-sensitive resin composition for an OLED, comprising: a) a resin comprising i) a polyamide precursor and ii) poly(hydroxy styrene) (poly hydroxy styrene); b) a 1,2-quinone diazide compound; c) a crosslinking agent; and d) a solvent. The polyimide light-sensitive resin composition according to the present invention is suitable for forming an organic insulating film of an OLED through the use of a polyimide precursor of which the molecular weight and solubility are easily adjusted.

Description

오엘이디용 폴리이미드 감광성 수지 조성물Polyimide photosensitive resin composition for ODL
본 발명은 OLED용 폴리이미드 감광성 수지 조성물에 관한 것으로, 더욱 상세하게는 분자량 및 용해도 조절이 용이한 폴리이미드 전구체를 사용하여 OLED의 유기절연막 형성에 적합하며, 특히 감도를 현저히 개선시킨 폴리이미드 감광성 수지 조성물에 관한 것이다.The present invention relates to a polyimide photosensitive resin composition for OLED, and more particularly, to a polyimide photosensitive resin, which is suitable for forming an organic insulating film of an OLED by using a polyimide precursor that is easy to control molecular weight and solubility, and particularly a sensitivity is remarkably improved. To a composition.
최근 시장에서는 디스플레이기기 중에서 다양한 이유로 Organic Light Emitting Diodes(OLED), 특히 AMOLED(Active matrix OLED)가 각광받고 있다.In recent years, organic light emitting diodes (OLEDs), especially AMOLEDs (active matrix OLEDs), have been in the spotlight for various reasons among display devices.
통상적으로 OLED 소자는 유기절연막을 포함하며, 상기 유기절연막의 형성에는 일반적으로 폴리이미드 감광성 수지 조성물이 사용되고 있다.Typically, an OLED element includes an organic insulating film, and a polyimide photosensitive resin composition is generally used for forming the organic insulating film.
종래 폴리이미드 감광성 수지 조성물에 사용되는 폴리이미드 전구체는 GMA로 protecting 하는 기술이 적용되었으나, GMA로 protecting한 폴리이미드 전구체는 분자량 및 용해도 조절이 어렵고, 겔화(gelation)로 인한 수율감소가 문제점이었으며, 감도가 낮아 이에 대한 개선책이 절실히 요청되고 있었다. The polyimide precursor used in the conventional polyimide photosensitive resin composition was applied with GMA protecting technology, but the polyimide precursor protected with GMA was difficult to control the molecular weight and solubility, and the yield reduction due to gelation was a problem. Because of the low level, there was an urgent need for improvement.
상기와 같은 종래기술의 문제점을 해결하고자, 본 발명은 분자량 및 용해도 조절이 용이한 폴리이미드 전구체를 사용하여 OLED의 유기절연막 형성에 적합하며, 특히 감도를 현저히 개선시킬 수 있는 폴리이미드 감광성 수지 조성물, 이를 이용한 OLED의 패턴형성방법 및 상기 폴리이미드 감광성 수지 조성물의 경화체를 포함하는 OLED 기판을 제공하는 것을 목적으로 한다.In order to solve the problems of the prior art as described above, the present invention is suitable for forming an organic insulating film of the OLED using a polyimide precursor that is easy to control the molecular weight and solubility, in particular a polyimide photosensitive resin composition that can significantly improve the sensitivity, It is an object of the present invention to provide an OLED substrate including a pattern forming method of an OLED using the same and a cured product of the polyimide photosensitive resin composition.
상기 목적을 달성하기 위하여, 본 발명은 OLED용 감광성 수지 조성물에 있어서,In order to achieve the above object, the present invention in the photosensitive resin composition for OLED,
a) i) 하기 화학식 1로 표시되는 폴리이미드 전구체, ii) 폴리하이드록시스티렌(poly hydroxy styrene)을 포함하는 레진;a) a resin comprising i) a polyimide precursor represented by Formula 1 below, and ii) poly hydroxy styrene;
b) 1,2-퀴논디아지드 화합물;b) 1,2-quinonediazide compounds;
c) 가교제;c) crosslinking agents;
d) 용제d) solvent
를 포함하는 것을 특징으로 하는 OLED용 폴리이미드 감광성 수지 조성물을 제공한다:It provides a polyimide photosensitive resin composition for OLED, comprising:
[화학식 1][Formula 1]
Figure PCTKR2012008362-appb-I000001
Figure PCTKR2012008362-appb-I000001
상기 화학식 1에서, In Chemical Formula 1,
X는 4가의 유기기이며, Y는 2가의 유기기이며, R은 각각 독립적으로 epoxy cyclohexyl methyl methacrylate(ECMMA) 또는 methylglycidyl methacrylate(MGMA)이며, n은 3 내지 100000의 정수이다.X is a tetravalent organic group, Y is a divalent organic group, R is independently epoxy cyclohexyl methyl methacrylate (ECMMA) or methylglycidyl methacrylate (MGMA), and n is an integer of 3-100000.
바람직하게, 본 발명은Preferably, the present invention
a) i) 하기 화학식 1로 표시되는 폴리이미드 전구체 40-90 중량%, ii) 폴리하이드록시스티렌(poly hydroxy styrene) 10-60 중량%를 포함하는 레진 100 중량부;a) 100 parts by weight of a resin comprising i) 40-90% by weight of polyimide precursor represented by Formula 1, ii) 10-60% by weight of poly hydroxy styrene;
b) 1,2-퀴논디아지드 화합물 5-50 중량부;b) 5-50 parts by weight of 1,2-quinonediazide compound;
c) 가교제 1-30 중량부;c) 1-30 parts by weight of a crosslinking agent;
d) 용제를 전체 폴리이미드 감광성 수지 조성물의 고형분 함량이 5 내지 50 중량%가 되도록 포함하는 것을 특징으로 하는 OLED용 폴리이미드 감광성 수지 조성물이다.d) The polyimide photosensitive resin composition for OLED containing the solvent so that solid content of the whole polyimide photosensitive resin composition may be 5 to 50 weight%.
또한 본 발명은 상기 OLED용 폴리이미드 감광성 수지 조성물의 경화체를 포함하는 OLED 기판을 제공한다.The present invention also provides an OLED substrate comprising a cured product of the polyimide photosensitive resin composition for OLED.
또한 본 발명은 상기 OLED용 폴리이미드 감광성 수지 조성물을 이용한 OLED 기판의 패턴형성방법을 제공한다.In another aspect, the present invention provides a pattern forming method of an OLED substrate using the polyimide photosensitive resin composition for OLED.
본 발명에 따른 OLED용 폴리이미드 감광성 수지 조성물은 분자량 및 용해도 조절이 용이한 폴리이미드 전구체를 사용하여 OLED의 유기절연막 형성에 적합하며, 특히 감도를 현저히 개선시킬 수 있다.The polyimide photosensitive resin composition for OLEDs according to the present invention is suitable for forming an organic insulating film of an OLED by using a polyimide precursor that is easy to control molecular weight and solubility, and in particular, can significantly improve sensitivity.
이하, 본 발명을 상세히 설명한다.Hereinafter, the present invention will be described in detail.
본 발명의 OLED용 폴리이미드 감광성 수지 조성물은 a) i) 하기 화학식 1로 표시되는 폴리이미드 전구체, ii) 폴리하이드록시스티렌을 포함하는 레진; b) 1,2-퀴논디아지드 화합물; c) 가교제; 및 d) 용제를 포함하는 것을 특징으로 한다.Polyimide photosensitive resin composition for an OLED of the present invention is a resin comprising a) i) a polyimide precursor represented by the general formula (1), ii) polyhydroxy styrene; b) 1,2-quinonediazide compounds; c) crosslinking agents; And d) a solvent.
화학식 1
Figure PCTKR2012008362-appb-C000001
Formula 1
Figure PCTKR2012008362-appb-C000001
상기 화학식 1에서, In Chemical Formula 1,
X는 4가의 유기기이며, Y는 2가의 유기기이며, R은 각각 독립적으로 epoxy cyclohexyl methyl methacrylate(ECMMA) 또는 methylglycidyl methacrylate(MGMA)이며, n은 3 내지 100000의 정수이다.X is a tetravalent organic group, Y is a divalent organic group, R is independently epoxy cyclohexyl methyl methacrylate (ECMMA) or methylglycidyl methacrylate (MGMA), and n is an integer of 3-100000.
본 발명에 사용되는 상기 a) i) 상기 화학식 1로 표시되는 폴리이미드 전구체는 바람직하기로 하기 반응식 1의 과정을 통하여 제조될 수 있다. 더욱 바람직하기로 하기 반응식 1에서 X는 2,2-bis(3,4-anhydrodicarboxyphenyl)Hexafluoropropane(6FDA, 화학식 2), 5-(2,5-Dioxotetrahydrofuryl)-3-methyl-3-cyclohexene-1,2-dicarboxylic Anhydride(DOCDA, 화학식 3), 또는 2,3,3',4'-Biphenyl tetracarboxylic dianhydride(a-BPDA, 화학식 4)으로부터 유도된 4가의 유기기이며, Y는 4,4'-diamino-3,3'-dimethyl-diphenylmethane(DADM, 화학식 5), 2,2-Bis(3-amino-4-hydroxyphenyl)-hexafluoropropane(Bis-APAF, 화학식 6), 또는 1,3-Bis(3-aminopropyl)tetramethyldisiloxane(SiDA(PAM-E), 화학식 7)으로부터 유도된 2가의 유기기이며, R은 epoxy cyclohexyl methyl methacrylate(ECMMA)이다.A) i) The polyimide precursor represented by Chemical Formula 1 used in the present invention may be prepared through the process of Scheme 1 below. More preferably, in Scheme 1, X is 2,2-bis (3,4-anhydrodicarboxyphenyl) Hexafluoropropane (6FDA, Formula 2), 5- (2,5-Dioxotetrahydrofuryl) -3-methyl-3-cyclohexene-1, A tetravalent organic group derived from 2-dicarboxylic Anhydride (DOCDA, Formula 3), or 2,3,3 ', 4'-Biphenyl tetracarboxylic dianhydride (a-BPDA, Formula 4), Y is a 4,4'-diamino -3,3'-dimethyl-diphenylmethane (DADM, formula 5), 2,2-Bis (3-amino-4-hydroxyphenyl) -hexafluoropropane (Bis-APAF, formula 6), or 1,3-Bis (3- A divalent organic group derived from aminopropyl) tetramethyldisiloxane (SiDA (PAM-E), formula (7)), R is epoxy cyclohexyl methyl methacrylate (ECMMA).
[반응식 1]Scheme 1
Figure PCTKR2012008362-appb-I000002
Figure PCTKR2012008362-appb-I000002
화학식 2
Figure PCTKR2012008362-appb-C000002
Formula 2
Figure PCTKR2012008362-appb-C000002
화학식 3
Figure PCTKR2012008362-appb-C000003
Formula 3
Figure PCTKR2012008362-appb-C000003
화학식 4
Figure PCTKR2012008362-appb-C000004
Formula 4
Figure PCTKR2012008362-appb-C000004
화학식 5
Figure PCTKR2012008362-appb-C000005
Formula 5
Figure PCTKR2012008362-appb-C000005
화학식 6
Figure PCTKR2012008362-appb-C000006
Formula 6
Figure PCTKR2012008362-appb-C000006
화학식 7
Figure PCTKR2012008362-appb-C000007
Formula 7
Figure PCTKR2012008362-appb-C000007
상기 폴리이미드 전구체는 protecting 부분을 종래의 GMA에서 epoxy cyclohexyl methyl methacrylate(ECMMA) 또는 methylglycidyl methacrylate(MGMA)로 변환하여 분자량 및 용해도 조절을 용이하게 하고, 겔화에 따른 수율의 감소를 원천적으로 감소시키며, 폴리이미드 감광성 수지 조성물의 감도를 증진시킨다. 본 발명에서 상기 폴리이미드 전구체의 분자량은 3000-10000인 것이 좋으며, 바람직하기로는 3500-7000인 것이 좋다. 상기 범위 내인 경우 용해도 조절, 수율 및 감도를 더욱 증진시킬 수 있다.The polyimide precursor converts the protecting portion from conventional GMA to epoxy cyclohexyl methyl methacrylate (ECMMA) or methylglycidyl methacrylate (MGMA) to facilitate the control of molecular weight and solubility, and to reduce the yield decrease due to gelation, It improves the sensitivity of the mid photosensitive resin composition. In the present invention, the molecular weight of the polyimide precursor is preferably 3000-10000, preferably 3500-7000. If it is in the above range, solubility control, yield and sensitivity can be further enhanced.
상기 폴리이미드 전구체의 함량은 본 발명에 사용되는 a)레진의 40-90 중량%로 사용하는 것이 좋다. 상기 범위 내인 경우 현상성, 내열성 및 감도를 더욱 증진시킬 수 있다.The content of the polyimide precursor is preferably used in 40-90% by weight of a) resin used in the present invention. When in the above range, it is possible to further improve the developability, heat resistance and sensitivity.
또한 본 발명의 상기 레진으로 사용되는 ii) 폴리하이드록시스티렌은 분자량이 4000 내지 20000인 것을 사용하는 것이 좋으며, 함량은 본 발명에 사용되는 레진의 10-60 중량%로 사용하는 것이 좋다. 상기 범위 내인 경우 현상성, 내열성 및 감도를 더욱 증진시킬 수 있다.In addition, ii) polyhydroxystyrene used as the resin of the present invention is preferably used with a molecular weight of 4000 to 20000, the content is preferably used in 10-60% by weight of the resin used in the present invention. When in the above range, it is possible to further improve the developability, heat resistance and sensitivity.
또한 본 발명의 a)레진은 상기 폴리이미드 전구체와 폴리하이드록시스티렌과 더불어 노볼락 수지를 더욱 포함할 수 있다. 상기 단계중합을 통해 제조된 노볼락 수지를 사용하는 것이 좋다.In addition, a) resin of the present invention may further include a novolak resin in addition to the polyimide precursor and polyhydroxy styrene. It is preferable to use a novolak resin prepared through the step polymerization.
상기 단계중합을 통해 제조된 노볼락 수지는 알데히드와 치환된 페놀을 축합하여 제조할 수 있다. 상기 알데히드로는 포름알데히드 등이 있으며, 치환된 페놀은 오르토-, 메타-, 파라-크레솔, 2,4-자이레놀, 2,5-자이레놀, 3,4-자이레놀, 3,5-자이레놀, 2,3,5-트리메틸페놀, 또는 이들의 혼합물 등이 있다.The novolak resin prepared through the step polymerization may be prepared by condensing an aldehyde and a substituted phenol. The aldehyde is formaldehyde, etc., and substituted phenols are ortho-, meta-, para-cresol, 2,4-xylenol, 2,5-xylenol, 3,4-xylenol, 3,5- Xylenol, 2,3,5-trimethylphenol, or mixtures thereof.
상기 단계중합을 통해 제조된 노볼락 수지의 폴리스티렌 환산 중량평균분자량은 3,000 내지 30,000인 것이 바람직하며, 더욱 바람직하게는 3,000 내지 20,000인 것이다.The polystyrene reduced weight average molecular weight of the novolak resin prepared through the step polymerization is preferably 3,000 to 30,000, more preferably 3,000 to 20,000.
본 발명의 a)레진이 노볼락수지를 포함할 경우 상기 a)레진은 폴리이미드 전구체 40-85 중량%, 폴리하이드록시스티렌 10-55 중량% 및 노볼락 수지 1-20 중량%를 함유하는 것이 좋다.When a) resin of the present invention comprises a novolak resin, it is preferable that the a) resin contains 40-85 wt% of polyimide precursor, 10-55 wt% of polyhydroxystyrene, and 1-20 wt% of novolak resin. good.
본 발명에 사용되는 상기 b)의 1,2-퀴논디아지드 화합물은 감광성 화합물로 사용된다. 상기 b) 1,2-퀴논디아지드 화합물은 공지의 OLED의 유기절연막 형성에 사용되는 감광성 조성물에 적용될 수 있는 것이면 사용가능하며, 일예로 페놀화합물과 나프토퀴논디아지드술폰산할로겐 화합물을 반응시켜 얻어진 것을 사용할 수 있다.The 1,2-quinonediazide compound of b) used in the present invention is used as a photosensitive compound. B) The 1,2-quinonediazide compound may be used as long as it can be applied to a photosensitive composition used for forming an organic insulating film of a known OLED, and is obtained by, for example, reacting a phenol compound with a naphthoquinone diazide sulfonic acid halogen compound. Can be used.
바람직하기로 상기 1,2-퀴논디아지드 화합물은 1,2-퀴논디아지드 4-술폰산 에스테르, 1,2-퀴논디아지드 5-술폰산 에스테르, 또는 1,2-퀴논디아지드 6-술폰산 에스테르 등을 사용할 수 있다.Preferably, the 1,2-quinonediazide compound is 1,2-quinonediazide 4-sulfonic acid ester, 1,2-quinonediazide 5-sulfonic acid ester, 1,2-quinonediazide 6-sulfonic acid ester, or the like. Can be used.
상기 b) 1,2-퀴논디아지드 화합물은 a)의 레진 100 중량부에 대하여 5 내지 50 중량부로 포함되는 것이 바람직하다. 그 함량이 5 중량부 미만일 경우에는 노광부와 비노광부의 용해도 차가 작아져 패턴 형성이 어려울 수 있으며, 50 중량부를 초과할 경우에는 단시간 동안 빛을 조사할 때 미반응 1,2-퀴논디아지드 화합물이 다량 잔존하여 현상액인 알칼리 수용액에 대한 용해도가 지나치게 낮아져 현상이 어려울 수 있다.The b) 1,2-quinonediazide compound is preferably included 5 to 50 parts by weight based on 100 parts by weight of the resin of a). If the content is less than 5 parts by weight, the difference in solubility of the exposed and non-exposed parts may be difficult to form. If the content exceeds 50 parts by weight, unreacted 1,2-quinonediazide compound may be used when irradiated with light for a short time. It may be difficult to develop due to the excessively low solubility in the aqueous alkali solution being a developer.
본 발명에 사용되는 상기 c)의 가교제는 a)의 레진과 가교구조를 형성하는 작용을 하며, 바람직하기로 상기 가교제는 멜라닌계 가교제인 것이 좋다.The crosslinking agent of c) used in the present invention functions to form a crosslinked structure with the resin of a), and preferably, the crosslinking agent is a melanin crosslinking agent.
상기 멜라닌계 가교제로는 요소와 포름알데히드의 축합생성물, 멜라민과 포름알데히드의 축합생성물, 또는 알코올로부터 얻어진 메틸올요소알킬에테르류나 메틸올멜라민알킬에테르류 등을 사용할 수 있다.As the melanin-based crosslinking agent, condensation products of urea and formaldehyde, condensation products of melamine and formaldehyde, methylol urea alkyl ethers and methylol melamine alkyl ethers obtained from alcohols, and the like can be used.
구체적으로, 상기 요소와 포름알데히드의 축합생성물로는 모노메틸올요소, 디메틸올요소 등을 사용할 수 있다. 상기 멜라민과 포름알데히드의 축합생성물로는 헥사메틸올멜라민을 사용할 수 있으며, 그밖에 멜라민과 포름알데히드의 부분적인 축합생성물도 사용할 수 있다. Specifically, monomethylol urea, dimethylol urea, or the like may be used as a condensation product of the urea and formaldehyde. Hexamethylol melamine may be used as the condensation product of melamine and formaldehyde, and other condensation products of melamine and formaldehyde may be used.
또한, 상기 메틸올요소알킬에테르류로는 요소와 포름알데히드의 축합생성물에 메틸올기의 부분 또는 전부에 알코올류를 반응시켜 얻어지는 것으로, 그 구체적 예로는 모노메틸요소메틸에테르, 디메틸요소메틸에테르 등을 사용할 수 있다. 상기 메틸올멜라민알킬에테르류로는 멜라민과 포름알데히드의 축합생성물에 메틸올기의 부분 또는 전부에 알코올류를 반응시켜 얻어지는 것으로, 그 구체적 예로서는 헥사메틸올멜라민헥사메틸에테르, 헥사메틸올멜라민헥사부틸에테르 등을 사용할 수 있다. 또한, 멜라민의 아미노기의 수소원자가 히드록시 메틸기 및 메톡시 메틸기로 치환된 구조의 화합물, 멜라민의 아미노기의 수소원자가 부톡시 메틸기 및 메톡시 메틸기로 치환된 구조의 화합물 등도 사용할 수 있으며, 특히, 메틸올 멜라민 알킬 에테르류를 사용하는 것이 바람직하다.In addition, the methylol urea alkyl ethers are obtained by reacting a condensation product of urea with formaldehyde with alcohols in part or all of the methylol groups, and specific examples thereof include monomethyl urea methyl ether, dimethyl urea methyl ether, and the like. Can be used. The methylol melamine alkyl ethers are obtained by reacting a condensation product of melamine and formaldehyde with alcohols in part or all of methylol groups, and specific examples thereof include hexamethylolmelamine hexamethyl ether and hexamethylolmelamine hexabutyl ether. Etc. can be used. Moreover, the compound of the structure where the hydrogen atom of the amino group of melamine was substituted by the hydroxy methyl group and the methoxy methyl group, the compound of the structure where the hydrogen atom of the amino group of melamine was substituted by the butoxy methyl group and the methoxy methyl group, etc. can also be used, Especially methylol Preference is given to using melamine alkyl ethers.
상기와 같은 멜라민계 가교제는 a)의 레진 100 중량부에 대하여 1 내지 30 중량부로 포함되는 것이 바람직하며, 더욱 바람직하게는 1 내지 20 중량부로 포함되는 것이다. 그 함량이 1 중량부 미만일 경우에는 포토스피드가 저하된다는 문제점이 있으며, 30 중량부를 초과할 경우에는 저장안정성이 저하된다는 문제점이 있다.The melamine-based crosslinking agent is preferably included in an amount of 1 to 30 parts by weight, more preferably 1 to 20 parts by weight, based on 100 parts by weight of the resin of a). If the content is less than 1 part by weight, there is a problem that the photospeed is lowered, and if it exceeds 30 parts by weight, there is a problem that the storage stability is lowered.
본 발명에 사용되는 상기 d)의 용매는 폴리이미드 감광성 수지 조성물의 평탄성과 코팅얼룩을 발생하지 않게 하여 균일한 패턴 프로파일(pattern profile)을 형성하게 하는 작용을 한다.The solvent of d) used in the present invention serves to form a uniform pattern profile by preventing the flatness and coating stain of the polyimide photosensitive resin composition.
상기 용매는 메탄올, 에탄올, 벤질알코올, 헥실알코올 등의 알코올류; 에틸렌글리콜메틸에테르아세테이트, 에틸렌글리콜에틸에테르아세테이트 등의 에틸렌글리콜알킬에테르아세테이트류; 에틸렌글리콜메틸에테르프로피오네이트, 에틸렌글리콜에틸에테르프로피오네이트 등의 에틸렌글리콜알킬에테르프로피오네이트류; 에틸렌글리콜메틸에테르, 에틸렌글리콜에틸에테르 등의 에틸렌글리콜모노알킬에테르류; 디에틸렌글리콜모노메틸에테르, 디에틸렌글리콜모노에틸에테르, 디에틸렌글리콜디메틸에테르, 디에틸렌글리콜메틸에틸에테르 등의 디에틸렌글리콜알킬에테르류; 프로필렌글리콜메틸에테르아세테이트, 프로필렌글리콜에틸에테르아세테이트, 프로필렌글리콜프로필에테르아세테이트 등의 프로필렌글리콜알킬에테르아세테이트류; 프로필렌글리콜메틸에테르프로피오네이트, 프로필렌글리콜에틸에테르프로피오네이트, 프로필렌글리콜프로필에테르프로피오네이트 등의 프로필렌글리콜알킬에테르프로피오네이트류; 프로필렌글리콜메틸에테르, 프로필렌글리콜에틸에테르, 프로필렌글리콜프로필에테르, 프로필렌글리콜부틸에테르 등의 프로필렌글리콜모노알킬에테르류; 디프로필렌글리콜디메틸에테르, 디포로필렌글리콜디에틸에테르 등의 디프로필렌글리콜알킬에테르류; 부틸렌글리콜모노메틸에테르, 부틸렌글리콜모노에틸에테르 등의 부틸렌글리콜모노메틸에테르류; 또는 디부틸렌글리콜디메틸에테르, 디부틸렌글리콜디에틸에테르 등의 디부틸렌글리콜알킬에테르류; 감마부티로락톤 등을 사용할 수 있다. 바람직하기로 상기 용매는 감마부티로락톤과 프로필렌글리콜메틸에테르아세테이트(PGMEA)가 각각 10-90:10-90의 중량비로 혼합된 용매를 사용하는 것이 좋다. 이 경우 레진의 용해성, 평탄성이 더욱 좋다.The solvent may be alcohol such as methanol, ethanol, benzyl alcohol, hexyl alcohol; Ethylene glycol alkyl ether acetates such as ethylene glycol methyl ether acetate and ethylene glycol ethyl ether acetate; Ethylene glycol alkyl ether propionates such as ethylene glycol methyl ether propionate and ethylene glycol ethyl ether propionate; Ethylene glycol monoalkyl ethers such as ethylene glycol methyl ether and ethylene glycol ethyl ether; Diethylene glycol alkyl ethers such as diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol methyl ethyl ether; Propylene glycol alkyl ether acetates such as propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate, and propylene glycol propyl ether acetate; Propylene glycol alkyl ether propionates such as propylene glycol methyl ether propionate, propylene glycol ethyl ether propionate and propylene glycol propyl ether propionate; Propylene glycol monoalkyl ethers such as propylene glycol methyl ether, propylene glycol ethyl ether, propylene glycol propyl ether, and propylene glycol butyl ether; Dipropylene glycol alkyl ethers such as dipropylene glycol dimethyl ether and diporoethylene glycol diethyl ether; Butylene glycol monomethyl ether, such as butylene glycol monomethyl ether and butylene glycol monoethyl ether; Or dibutylene glycol alkyl ethers such as dibutylene glycol dimethyl ether and dibutylene glycol diethyl ether; Gamma butyrolactone etc. can be used. Preferably, the solvent is a solvent in which gamma butyrolactone and propylene glycol methyl ether acetate (PGMEA) are mixed in a weight ratio of 10-90: 10-90, respectively. In this case, the solubility and flatness of the resin are better.
상기 용매는 전체 감광성 수지 조성물의 고형분 함량이 5 내지 50 중량%가 되도록 포함되는 것이 바람직하며, 더욱 바람직하게는 15 내지 40 중량%가 되도록 포함시키는 것이다. 상기 전체 조성물의 고형분 함량이 10 중량% 미만일 경우에는 코팅두께가 얇게 되고, 코팅평탄성이 저하된다는 문제점이 있으며, 50 중량%를 초과할 경우에는 코팅두께가 두꺼워지고, 코팅시 코팅장비에 무리를 줄 수 있다는 문제점이 있다.The solvent is preferably included so that the solid content of the entire photosensitive resin composition is 5 to 50% by weight, more preferably 15 to 40% by weight. If the solid content of the total composition is less than 10% by weight, there is a problem that the coating thickness is thin, coating flatness is lowered, and when the content of the solid content exceeds 50% by weight, the coating thickness becomes thick, and the coating equipment is impaired during coating. There is a problem that can be.
또한 본 발명의 감광성 수지 조성물은 기본적으로 포지티브형 감광성 수지 조성물이나 광산발생제를 더욱 포함하여 네가티브형 감광성 수지 조성물로도 적용할 수 있다. 상기 광산발생제는 종래 감광성 수지 조성물에 사용되는 광산발생제이면 특별히 한정되지 않으며, 바람직하게 설포늄염, 요오드늄염 등과 같은 이온성 광산발생제, 설포니디아조메탄계, N-설포닐옥시이미드계, 벤조인설포네이트계, 니트로벤질설포네이트계, 설폰계, 글리옥심계, 또는 트리아진계 등을 사용할 수 있다.Moreover, the photosensitive resin composition of this invention can also be applied also as a negative photosensitive resin composition which contains a positive photosensitive resin composition and a photo-acid generator fundamentally. The photoacid generator is not particularly limited as long as it is a photoacid generator used in the conventional photosensitive resin composition, and preferably, an ionic photoacid generator such as a sulfonium salt and an iodonium salt, a sulfonydiazomethane series, and an N-sulfonyloxyimide series , Benzoin sulfonate type, nitrobenzyl sulfonate type, sulfone type, glyoxime type, triazine type or the like can be used.
구체적으로, 상기 설포늄염은 설포늄 양이온과 설포네이트(설포산 음이온)의 염으로, 상기 설포늄 양이온으로는 트리페놀설포늄, (4-tert-부톡시페닐)디페닐설포늄, 비스(4-tert-부톡시페닐)페닐설포늄, 4-메틸페닐디페닐설포늄, 트리스(4-메틸페닐설포늄), 4-tert-부틸페닐디페닐설포늄, 트리스(4-tert-부틸페닐)설포늄, 트리스(4-tert-부톡시페닐)설포늄, (3-tert-부톡시페닐)디페닐설포늄, 비스(3-tert-부톡시페닐)페닐설포늄, 트리스(3-tert-부톡시페닐)설포늄, (3,4-디tert-부톡시페닐)디페닐설포늄, 비스(3,4-디tert-부톡시페닐)페닐설포늄, 트리스(3,4-디tert-부톡시페닐)설포늄, 디페닐(4-티오페녹시페닐)설포늄, (4-tert-부톡시카르보닐메틸옥시페닐)디페닐설포늄, 트리스(4-tert-부톡시카르보닐메틸옥시페닐)설포늄, (4-tert-부톡시페닐)비스(4-디메틸아미노페닐)설포늄, 트리스(4-디메틸아미노페닐)설포늄,-2-나프틸디페닐설포늄, 디메틸-2-나프틸설포늄, 4-히드록시페닐디메틸설포늄, 40메톡시페닐디메틸설포늄, 트리메틸설포늄, 디페닐메틸설포늄, 메틸-2옥소프로필페닐설포늄, 2-옥소시클로헥실시클로헥실메틸설포늄, 트리나프틸설포늄, 또는 트리벤질설포늄 등이 있고, 상기 설포네이트로는 트리플루오로메탄설포네이트, 노나플루오로부탄설포네이트, 헵타데카플루오로옥탄설포네이트, 2,2,2-트리플루오로에탄설포네이트, 펜다플루오로벤젠설포네이트, 4-트리풀루오로메틸벤젠설포네이트, 4-플루오로벤젠설포네이트, 톨루엔설포네이트, 벤젠설포네이트, 나프탈렌설포네이트, 캄포설포네이트, 옥탄설포네이트, 도데실벤젠설포네이트, 부탄설포네이트, 또는 메탄설포네이트 등이 있다.Specifically, the sulfonium salt is a salt of a sulfonium cation and a sulfonate (sulfoic acid anion), and the sulfonium cation includes triphenolsulfonium, (4-tert-butoxyphenyl) diphenylsulfonium, and bis (4 -tert-butoxyphenyl) phenylsulfonium, 4-methylphenyldiphenylsulfonium, tris (4-methylphenylsulfonium), 4-tert-butylphenyldiphenylsulfonium, tris (4-tert-butylphenyl) sulfonium , Tris (4-tert-butoxyphenyl) sulfonium, (3-tert-butoxyphenyl) diphenylsulfonium, bis (3-tert-butoxyphenyl) phenylsulfonium, tris (3-tert-butoxy Phenyl) sulfonium, (3,4-ditert-butoxyphenyl) diphenylsulfonium, bis (3,4-ditert-butoxyphenyl) phenylsulfonium, tris (3,4-ditert-butoxy Phenyl) sulfonium, diphenyl (4-thiophenoxyphenyl) sulfonium, (4-tert-butoxycarbonylmethyloxyphenyl) diphenylsulfonium, tris (4-tert-butoxycarbonylmethyloxyphenyl ) Sulfonium, (4-tert-butoxyphenyl) bis (4-dimethylaminophenyl) sulfonium, tri (4-dimethylaminophenyl) sulfonium, -2-naphthyldiphenylsulfonium, dimethyl-2-naphthylsulfonium, 4-hydroxyphenyldimethylsulfonium, 40methoxyphenyldimethylsulfonium, trimethylsulfonium, diphenyl Methylsulfonium, methyl-2oxopropylphenylsulfonium, 2-oxocyclohexylcyclohexylmethylsulfonium, trinaphthylsulfonium, or tribenzylsulfonium. The sulfonate is trifluoromethanesulfonate. , Nonafluorobutanesulfonate, heptadecafluorooctanesulfonate, 2,2,2-trifluoroethanesulfonate, pendafluorobenzenesulfonate, 4-trifluorofluoromethylbenzenesulfonate, 4-fluoro Robenzenesulfonate, toluenesulfonate, benzenesulfonate, naphthalenesulfonate, camphorsulfonate, octanesulfonate, dodecylbenzenesulfonate, butanesulfonate, or methanesulfonate.
상기 요오드늄염은 요오드늄 양이온과 설포네이트(설포산 음이온)의 염으로, 상기 요오드늄 양이온으로는 디페닐요오드늄, 비스(4-tert-부틸페닐)요오드늄, 4-tert-부톡시페닐페닐요오드늄, 또는 4-메톡시페닐페닐요오드늄 등이 있고, 상기 설포네이트로는 트리플루오로메탄설포네이트 노나플루오로부타설포네이트 헵타데카플루오로옥탄설포네이트, 2,2,2-트리플루오로에탄설포네이트, 펜타플루오로벤젠설포네이트, 4-트리플루오로메틸벤젠설포네이트, 4-플루오로벤젠설포네이트, 톨루엔설포네이트 벤젠설포네이트, 나프탈렌설포네이트, 캄포설포네이트, 옥탄설포네이트, 도데실벤젠설포네이트, 부탄설포네이트, 또는 메탄설포네이트 등이 있다.The iodonium salt is a salt of an iodonium cation and a sulfonate (sulfoic acid anion), and the iodonium cation is diphenyl iodonium, bis (4-tert-butylphenyl) iodonium, and 4-tert-butoxyphenylphenyl. Iodonium or 4-methoxyphenylphenyl iodonium and the like, and the sulfonate is trifluoromethanesulfonate nonafluorobutasulfonate heptadecafluorooctanesulfonate, 2,2,2-trifluoro Roethanesulfonate, pentafluorobenzenesulfonate, 4-trifluoromethylbenzenesulfonate, 4-fluorobenzenesulfonate, toluenesulfonate benzenesulfonate, naphthalenesulfonate, camphorsulfonate, octanesulfonate, dode Silbenzenesulfonate, butanesulfonate, or methanesulfonate.
상기 설포닐디아조메탄계 광산발생제로는 비스(에틸설포닐)디아조메탄, 비스(1-메틸프로필설포닐)디아조메탄, 비스(2-메틸프포필설포닐)디아조메탄, 비스(1,1-디메틸에틸설포닐)디아조메탄, 비스(시클로헥실설포닐)디아조메탄, 비스(퍼플루로로이소프로필설포닐)디아조메탄, 비스(페닐설포닐)디아조메탄, 비스(4-메틸페닐설포닐)디아조 메탄, 비스(2,4-디메틸페닐설포닐)디아조메탄, 비스(2-나프틸설포닐)디아조메탄, 4-메틸페닐설포닐벤조일디아조메탄, tert-부틸카르보닐-4-메틸페닐설포닐디아조메탄, 2-나프틸설포닐벤조일디아조메탄, 4-메틸페닐설포닐-2-나프토일디아조메탄, 메틸설포닐벤조일디아조메탄, 또는 tert-부톡시카르보닐-4-메틸페닐설포닐디아조메탄 등의 비스설포닐디아조메탄과 설포닐카르보닐디아조메탄이 있다.Examples of the sulfonyl diazomethane-based photoacid generators include bis (ethylsulfonyl) diazomethane, bis (1-methylpropylsulfonyl) diazomethane, bis (2-methylpropofylsulfonyl) diazomethane and bis (1). , 1-dimethylethylsulfonyl) diazomethane, bis (cyclohexylsulfonyl) diazomethane, bis (perfluroloisopropylsulfonyl) diazomethane, bis (phenylsulfonyl) diazomethane, bis (4 -Methylphenylsulfonyl) diazo methane, bis (2,4-dimethylphenylsulfonyl) diazomethane, bis (2-naphthylsulfonyl) diazomethane, 4-methylphenylsulfonylbenzoyldiazomethane, tert-butylcar Bonyl-4-methylphenylsulfonyldiazomethane, 2-naphthylsulfonylbenzoyldiazomethane, 4-methylphenylsulfonyl-2-naphthoyldiazomethane, methylsulfonylbenzoyldiazomethane, or tert-butoxycarbonyl Bissulfonyl diazomethane and sulfonylcarbonyl diazomethane, such as 4-methylphenyl sulfonyl diazomethane.
상기 N-설포닐옥시이미드계 광산발생제로는 숙신산 이미드, 나프탈렌디카르복실산 이미드, 프탈산 이미드, 시클로헥실디카르복실산 이미드, 5-노르보르넨-2,3-디카르복실산 이미드, 또는 7-옥사비시클로[2,2,1]-5-헵텐-2,3-디카르복실산 이미드 등의 이미드 골격과 트리플루오로메탄설포네이트, 노나플루오로부탄설포네이트, 헵타데카플루오로옥탄설포네이트, 2,2,2-트리플루오로에탄설포네이트, 펜타플루오로벤젠설포네이트, 4-트리풀루오로메틸벤젠설포네이트, 4-플루오로벤젠설포네이트, 톨루엔설포네이트, 벤젠설포네이트, 나프탈렌설포네이트, 캄포설포네이트, 옥탄설포네이트, 도데실벤젠설포네이트. 부탄설포네이트, 또는 메탄설포네이트 등의 화합물이 있다.Examples of the N-sulfonyloxyimide-based photoacid generator include succinic acid imide, naphthalenedicarboxylic acid imide, phthalic acid imide, cyclohexyldicarboxylic acid imide, 5-norbornene-2,3-dicarboxyl Imide skeletons such as acid imides or 7-oxabicyclo [2,2,1] -5-heptene-2,3-dicarboxylic acid imides, trifluoromethanesulfonate, and nonafluorobutanesulfo Nate, Heptadecafluorooctanesulfonate, 2,2,2-trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-trifluorofluoromethylbenzenesulfonate, 4-fluorobenzenesulfonate, toluene Sulfonates, benzenesulfonates, naphthalenesulfonates, camphorsulfonates, octanesulfonates, dodecylbenzenesulfonates. Butanesulfonate or methanesulfonate.
상기 벤조인설포네이트계 광산발생제로는 벤조인토실레이트, 벤조인메실레이트, 또는 벤조인부탄설포네이트 등을 들 수 있다.Examples of the benzoin sulfonate-based photoacid generator include benzointosylate, benzoin mesylate, or benzoin butanesulfonate.
상기 니트로벤질설포네이트계 광산발생제로는 2,4-디니트로벤질설포네이트, 2-니트로벤질설포네이트, 또는 2,6-디니트로벤질설포네이트 등이 있으며, 상기 설포네이트로는 트리플루오로메탄설포네이트, 노나플루오로부탄설포네이트, 헵타데카플루오로옥탄설포네이트, 2,2,2-트리플루오로에탄설포네이트, 펜타플루오로벤젠설포네이트, 4-트리플루오로메틸벤젠설포네이트, 4-플루오로벤젠설포네이트, 톨루엔설포네이트, 벤젠설포네이트, 나프탈렌설포네이트, 캄포설포네이트, 옥탄설포네이트, 도데실벤젠설포네이트, 부탄설포네이트, 또는 메탄설포네이트 등이 있다. 또한, 벤질측의 니트로기를 트리플루오로메틸기로 치환한 화합물도 사용할 수 있다.The nitrobenzylsulfonate-based photoacid generator includes 2,4-dinitrobenzylsulfonate, 2-nitrobenzylsulfonate, or 2,6-dinitrobenzylsulfonate, and the like. Sulfonate, nonafluorobutanesulfonate, heptadecafluorooctanesulfonate, 2,2,2-trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-trifluoromethylbenzenesulfonate, 4- Fluorobenzenesulfonate, toluenesulfonate, benzenesulfonate, naphthalenesulfonate, camphorsulfonate, octanesulfonate, dodecylbenzenesulfonate, butanesulfonate, or methanesulfonate. Moreover, the compound which substituted the nitro group of the benzyl side by the trifluoromethyl group can also be used.
상기 술폰계 광산발생제로는 비스(페닐설포닐)메탄, 비스(4-메틸페닐설포닐)메탄, 비스(2-나프틸설포닐)메탄, 2,2-비스(페닐설포닐)프로판, 2,2-비스(4-메틸페닐설포닐)프로판, 2,2-비스(2-나프틸설포닐)프로판, 2-메틸-2-(p-톨루엔설포닐)프로피오네논, 2-(시클로헥실카르보닐)-2-(p-톨루엔설포닐)프로판, 또는 2,4-디메틸-2-(p-톨루엔설포닐)펜탄-3-온 등이 있다.The sulfone-based photoacid generators include bis (phenylsulfonyl) methane, bis (4-methylphenylsulfonyl) methane, bis (2-naphthylsulfonyl) methane, 2,2-bis (phenylsulfonyl) propane, 2,2 -Bis (4-methylphenylsulfonyl) propane, 2,2-bis (2-naphthylsulfonyl) propane, 2-methyl-2- (p-toluenesulfonyl) propiononeone, 2- (cyclohexylcarbonyl) -2- (p-toluenesulfonyl) propane or 2,4-dimethyl-2- (p-toluenesulfonyl) pentan-3-one and the like.
상기 글리옥심계 광산발생제로는 비스-o-(p-톨루엔설포닐)-α-디메틸글리옥심, 비스-o-(p-톨루엔설포닐)-α-디메틸글리옥심, 비스-o-(p-톨루엔설포닐)-α-디시틀로헥실글리옥심, 비스-o-(p-톨루엔설포닐)-2,3-펜탄디온글리옥심, 비스-o-(p-톨루엔설포닐)-2-메틸-3,4-펜탄디온글리옥심, 비스-o-(n-부탄설포닐)-α-디메틸글리옥심,비스-o-(n-부탄설포닐)-α-디메틸글리옥심,비스-o-(n-부탄설포닐)-α-디시클로헥실글리옥심, 비스-o-(n-부탄설포닐)-2,3-펜탄디온글리옥심, 비스-o-(n-부탄설포닐)-2-메틸-3,4-펜탄디온글리옥심, 비스-o-(메탄설포닐)-α-디메틸글리옥심, 비스-o-(트리플루오로메탄설포닐)-α-디메틸글리옥심, 비스-o-(1,1,1-트리플루오로에탄설포닐)-α-디메틸글리옥심, 비스-o-(tert-부탄설포닐)-α-디메틸글리옥심, 비스-o-(퍼플루오로옥탄설포닐)-α-디메틸글리옥심, 비스-o-(시클로헥실설포닐)-α-디메틸글리옥심, 비스-o-(벤젠설포닐)-α-디메틸글리옥심,비스-o-(p-플루오로벤젠설포닐)-α-디메틸글리옥심, 비스-o-(p-tert-부틸벤젠설포닐)-α-디메틸글리옥심, 비스-o-(크실렌설포닐)-α-디메틸글리옥심, 또는 비스-o-(캄보설포닐)-α-디메틸글리옥심 등이 있다.Examples of the glyoxime-based photoacid generators include bis-o- (p-toluenesulfonyl) -α-dimethylglyoxime, bis-o- (p-toluenesulfonyl) -α-dimethylglyoxime and bis-o- (p -Toluenesulfonyl) -α-disotlohexylglyoxime, bis-o- (p-toluenesulfonyl) -2,3-pentanedioneglyoxime, bis-o- (p-toluenesulfonyl) -2- Methyl-3,4-pentanedioneglyoxime, bis-o- (n-butanesulfonyl) -α-dimethylglyoxime, bis-o- (n-butanesulfonyl) -α-dimethylglyoxime, bis-o -(n-butanesulfonyl) -α-dicyclohexylglyoxime, bis-o- (n-butanesulfonyl) -2,3-pentanedioneglyoxime, bis-o- (n-butanesulfonyl)- 2-methyl-3,4-pentanedioneglyoxime, bis-o- (methanesulfonyl) -α-dimethylglyoxime, bis-o- (trifluoromethanesulfonyl) -α-dimethylglyoxime, bis- o- (1,1,1-trifluoroethanesulfonyl) -α-dimethylglyoxime, bis-o- (tert-butanesulfonyl) -α-dimethylglyoxime, bis-o- (perfluorooctane Sulfonyl) -α-dimethylglyoxime, bis-o- (cy Clohexylsulfonyl) -α-dimethylglyoxime, bis-o- (benzenesulfonyl) -α-dimethylglyoxime, bis-o- (p-fluorobenzenesulfonyl) -α-dimethylglyoxime, bis- o- (p-tert-butylbenzenesulfonyl) -α-dimethylglyoxime, bis-o- (xylenesulfonyl) -α-dimethylglyoxime, or bis-o- (cambosulfonyl) -α-dimethylgly Oxime.
상기 트리아진계 광산발생제로는 PDM-Triazine, WS-Triazine, PDM-Triazine, Dimethoxy-Triazine, MP-Triazine, TFE-Triazine, 또는 TME-Triazine(삼화 케미컬) 등이 있다. The triazine-based photoacid generator includes PDM-Triazine, WS-Triazine, PDM-Triazine, Dimethoxy-Triazine, MP-Triazine, TFE-Triazine, or TME-Triazine (Sam Chemical).
상기 광산발생제는 a)의 레진 100 중량부에 대하여 1 내지 20 중량부로 포함되는 것이 바람직하며, 더욱 바람직하게는 1 내지 10 중량부로 포함되는 것이다. 그 함량이 1 중량부 미만일 경우에는 포토스피드(photospeed)가 저하된다는 문제점이 있으며, 20 중량부를 초과할 경우에는 아웃게싱(outgassing)과 저장안정성을 저하시킬 수 있다는 문제점이 있다.The photoacid generator is preferably included in 1 to 20 parts by weight, more preferably 1 to 10 parts by weight with respect to 100 parts by weight of the resin of a). If the content is less than 1 part by weight, there is a problem that the photospeed is reduced, and if it exceeds 20 parts by weight, outgassing and storage stability may be reduced.
상기와 같은 성분으로 이루어지는 본 발명의 감광성 수지 조성물은 필요에 따라 계면활성제를 추가로 포함할 수 있다. The photosensitive resin composition of this invention which consists of such components can further contain surfactant as needed.
상기 계면활성제는 본 발명의 폴리이미드 감광성 조성물의 밀착성, 도포성이나 현상성을 향상시키는 작용을 한다.The said surfactant functions to improve the adhesiveness, applicability | paintability, and developability of the polyimide photosensitive composition of this invention.
상기 계면활성제는 폴리옥시에틸렌옥틸페닐에테르, 폴리옥시에틸렌노닐페닐에테르, F171, F172, F173(상품명: 대일본잉크사), FC430, FC431(상품명: 수미또모트리엠사), 또는 KP341(상품명: 신월화학공업사) 등을 사용할 수 있다. The surfactant may be polyoxyethylene octylphenyl ether, polyoxyethylene nonylphenyl ether, F171, F172, F173 (trade name: Japan Nippon Ink Company), FC430, FC431 (trade name: Sumitomo Triem, Inc.), or KP341 (trade name: Shinwol) Chemical industry) and the like.
상기 계면활성제는 상기 a)의 레진 100 중량부에 대하여 0.0001 내지 2 중량부로 포함되는 것이 바람직하며, 그 함량이 상기 범위내일 경우에는 감광성 조성물의 도포성이나 현상성 향상에 있어 더욱 좋다.The surfactant is preferably included in an amount of 0.0001 to 2 parts by weight based on 100 parts by weight of the resin of a), and when the content is in the above range, it is more preferable in improving the coating property and developability of the photosensitive composition.
상기와 같은 성분으로 이루어지는 본 발명의 OLED용 폴리이미드 감광성 수지 조성물의 고형분 농도는 10 내지 50 중량부인 것이 바람직하며, 상기 범위의 고형분을 가지는 조성물은 0.1-0.2 ㎛의 밀리포아필터 등으로 여과한 뒤 사용하는 것이 좋다.The solid content concentration of the polyimide photosensitive resin composition for OLEDs of the present invention comprising the above components is preferably 10 to 50 parts by weight, and the composition having a solid content in the above range is filtered through a 0.1-0.2 μm Millipore filter or the like. It is good to use.
또한 본 발명은 상기 OLED용 폴리이미드 감광성 수지 조성물의 경화체를 포함하는 OLED 기판 및 상기 OLED용 폴리이미드 감광성 수지 조성물을 이용한 OLED 기판의 패턴형성방법을 제공한다.The present invention also provides an OLED substrate comprising a cured product of the polyimide photosensitive resin composition for OLED and a pattern forming method of the OLED substrate using the polyimide photosensitive resin composition for OLED.
본 발명의 OLED 기판의 패턴형성방법은 감광성 수지 조성물을 이용하여 OLED 기판의 패턴을 형성하는 방법에 있어서, 상기 OLED용 폴리이미드 감광성 수지 조성물을 사용하는 것을 특징으로 한다. 바람직하기로 상기 기판은 AMOLED 기판인 것이 좋다.The pattern formation method of the OLED substrate of this invention is a method of forming the pattern of an OLED substrate using the photosensitive resin composition, It is characterized by using the said polyimide photosensitive resin composition for OLED. Preferably, the substrate is an AMOLED substrate.
구체적인 예로서 상기 OLED용 폴리이미드 감광성 수지 조성물을 이용하여 OLED 기판의 패턴을 형성하는 방법은 다음과 같다.As a specific example, a method of forming a pattern of an OLED substrate using the polyimide photosensitive resin composition for OLED is as follows.
먼저 본 발명의 OLED용 폴리이미드 감광성 수지 조성물을 스프레이법, 롤코터법, 회전도포법 등으로 기판표면에 도포하고, 프리베이크에 의해 용매를 제거하여 도포막을 형성한다. 이때, 상기 프리베이크는 80-120 ℃의 온도에서 1-15 분간 실시하는 것이 바람직하다.First, the polyimide photosensitive resin composition for OLED of this invention is apply | coated to the surface of a board | substrate by the spray method, the roll coater method, the rotary coating method, etc., A solvent is removed by prebaking, and a coating film is formed. At this time, the prebaking is preferably carried out for 1-15 minutes at a temperature of 80-120 ℃.
그 다음, 미리 준비된 패턴에 따라 가시광선, 자외선, 원자외선, 전자선, 엑스선 등을 상기 형성된 도포막에 조사하고, 필요에 따라 노광후 베이크(PEB)와 전면노광(Flood Exposure)을 실시한 후, 현상액으로 현상하여 불필요한 부분을 제거함으로써 소정의 패턴을 형성한다. Then, visible light, ultraviolet light, far ultraviolet rays, electron beams, X-rays, or the like are irradiated to the formed coating film according to a pre-prepared pattern, and then subjected to post-exposure bake (PEB) and flood exposure as necessary. It develops and removes an unnecessary part, and a predetermined pattern is formed.
상기 현상액은 알칼리 수용액을 사용하는 것이 좋으며, 구체적으로 수산화나트륨, 수산화칼륨, 탄산나트륨 등의 무기 알칼리류; 에틸아민, n-프로필아민 등의 1급 아민류; 디에틸아민, n-프로필아민 등의 2급 아민류; 트리메틸아민, 메틸디에틸아민, 디메틸에틸아민, 트리에틸아민 등의 3급 아민류; 디메틸에탄올아민, 메틸디에탄올아민, 트리에탄올아민 등의 알콜아민류; 또는 테트라메틸암모늄히드록시드, 테트라에틸암모늄히드록시드 등의 4급 암모늄염의 수용액 등을 사용할 수 있다. 이때, 상기 현상액은 알칼리성 화합물을 0.1-10 중량%의 농도로 용해시켜 사용되며, 메탄올, 에탄올 등과 같은 수용성 유기용매 및 계면활성제를 적정량 첨가할 수도 있다.The developer is preferably an aqueous alkali solution, specifically, inorganic alkalis such as sodium hydroxide, potassium hydroxide and sodium carbonate; Primary amines such as ethylamine and n-propylamine; Secondary amines such as diethylamine and n-propylamine; Tertiary amines such as trimethylamine, methyldiethylamine, dimethylethylamine and triethylamine; Alcohol amines such as dimethylethanolamine, methyl diethanolamine and triethanolamine; Or an aqueous solution of a quaternary ammonium salt such as tetramethylammonium hydroxide or tetraethylammonium hydroxide can be used. In this case, the developer is used by dissolving the alkaline compound at a concentration of 0.1-10% by weight, and an appropriate amount of a water-soluble organic solvent such as methanol and ethanol and a surfactant may be added.
또한, 상기와 같은 현상액으로 현상한 후 초순수로 30-90 초간 세정하여 불필요한 부분을 제거하고 건조하여 패턴을 형성하고, 패턴을 오븐 등의 가열장치에 의해 130-250 ℃의 온도에서 30-90 분간 가열처리하여 최종 패턴을 얻을 수 있다.In addition, after developing with the developer as described above, it is washed with ultrapure water for 30-90 seconds to remove unnecessary parts and dried to form a pattern, the pattern is 30-90 minutes at a temperature of 130-250 ℃ by a heating apparatus such as an oven The heat treatment can give a final pattern.
본 발명에 따른 OLED용 폴리이미드 감광성 수지 조성물은 용해도 조절이 용이한 폴리이미드 전구체를 사용하여 OLED의 유기절연막 형성에 적합하며, 특히 감도를 현저히 향상시켜 OLED 제조공정에 적용하기 적합하다.The polyimide photosensitive resin composition for OLEDs according to the present invention is suitable for forming an organic insulating film of an OLED by using a polyimide precursor having easy solubility control, and is particularly suitable for application to an OLED manufacturing process by remarkably improving sensitivity.
이하, 본 발명의 이해를 돕기 위하여 바람직한 실시예를 제시하나, 하기 실시예는 본 발명을 예시하는 것일 뿐 본 발명의 범위가 하기 실시예에 한정되는 것은 아니다.Hereinafter, preferred examples are provided to help understanding of the present invention, but the following examples are merely to illustrate the present invention, and the scope of the present invention is not limited to the following examples.
[실시예]EXAMPLE
실시예 1Example 1
(폴리이미드 전구체의 제조)(Production of Polyimide Precursor)
300 ml 4구 반응용기에 Diamine인 DADM(화학식 5) 4g, Bis-APAF(화학식 6) 7g, SiDA(화학식 7) 1g을 감마부티로락톤 70g으로 녹였다. 또한 Dianhydride인 6-FDA(화학식 2) 5g, DOCDA(화학식 3) 3g, a-BPDA(화학식 4) 3g을 반응용기에 투입하고 1시간동안 교반하며 반응시켰다. 말단의 반응을 종결하기 위해 PA 2g을 투입 후 20 ℃에서 1시간동안 추가 반응시켜 고형분 함량 30%의 폴리이미드 전구체를 제조하였다. 여기에 Protecting 물질인 ECMMA 및 MGMA를 각각 5 g 씩 총 10 g를 투입 후 70℃까지 승온 후, 촉매인 TEA를 첨가하여 24hr 반응시켜 신규 폴리이미드 전구체를 제조하였다.In a 300 ml four-necked reaction vessel, 4 g of diamine DADM (Formula 5), 7 g of Bis-APAF (Formula 6), and 1 g of SiDA (Formula 7) were dissolved in 70 g of gamma butyrolactone. In addition, 5 g of 6-FDA (Chemical Formula 2), 3 g of DOCDA (Chemical Formula 3), and 3 g of a-BPDA (Chemical Formula 4) were added to the reaction vessel and reacted with stirring for 1 hour. In order to terminate the terminal reaction, 2 g of PA was added thereto, and then further reacted at 20 ° C. for 1 hour to prepare a polyimide precursor having a solid content of 30%. A total of 10 g of ECMMA and MGMA, which are protective materials, were added thereto, and the total temperature was raised to 70 ° C., followed by 24 hours of addition of TEA as a catalyst to prepare a new polyimide precursor.
(OLED용 폴리이미드 감광성 수지 조성물 제조)(Manufacture of polyimide photosensitive resin composition for OLED)
상기 제조된 폴리이미드 전구체 30 중량부, 폴리하이드록시스티렌 20 중량부와 1,2-퀴논디아지드 화합물 20 중량부 및 멜라민 가교제로 헥사메틸올멜라민 5 중량부를 혼합하였다. 그 다음, 상기 혼합물의 고형분 함량이 20 중량%가 되도록 감마부티로락톤과 PGMEA를 50:50의 중량비로 혼합한 용매로 용해시킨 후, 0.2 ㎛의 밀리포아필터로 여과하여 OLED용 폴리이미드 감광성 수지 조성물을 제조하였다.30 parts by weight of the prepared polyimide precursor, 20 parts by weight of polyhydroxystyrene, 20 parts by weight of 1,2-quinonediazide compound and 5 parts by weight of hexamethylolmelamine were mixed with a melamine crosslinking agent. Next, the mixture was dissolved in a solvent in which gamma butyrolactone and PGMEA were mixed at a weight ratio of 50:50 so that the solid content of the mixture was 20% by weight, and then filtered through a 0.2 μm millipore filter for polyimide photosensitive resin for OLED. The composition was prepared.
실시예 2Example 2
상기 실시예 1에서 폴리이미드 전구체의 제조시 ECMMA를 10 g을 사용한 것을 제외하고는 상기 실시예 1과 동일한 방법으로 실시하여 OLED용 폴리이미드 감광성 수지 조성물을 제조하였다.The polyimide photosensitive resin composition for OLED was prepared in the same manner as in Example 1, except that 10 g of ECMMA was used to prepare the polyimide precursor in Example 1.
실시예 3Example 3
상기 실시예 1에서 ECMMA를 대신하여 MGMA 10 g을 사용한 것을 제외하고는 상기 실시예 1과 동일한 방법으로 OLED용 폴리이미드 감광성 수지 조성물을 제조하였다.Except for using MGMA 10 g instead of ECMMA in Example 1 was prepared in the same manner as in Example 1 polyimide photosensitive resin composition for OLED.
실시예 4Example 4
상기 실시예 1에서 광산발생제로 트리아진계 TME-Triazine 3 중량부를 더욱 사용한 것을 제외하고는 상기 실시예 1과 동일한 방법으로 OLED용 폴리이미드 감광성 수지 조성물을 제조하였다.The polyimide photosensitive resin composition for OLED was manufactured in the same manner as in Example 1, except that 3 parts by weight of triazine-based TME-Triazine was further used as a photoacid generator in Example 1.
비교예 1Comparative Example 1
상기 실시예 1에서 ECMMA를 대신하여 GMA 8 g을 사용한 것을 제외하고는 상기 실시예 1과 동일한 방법으로 OLED용 폴리이미드 감광성 수지 조성물을 제조하였다.The polyimide photosensitive resin composition for OLED was manufactured in the same manner as in Example 1, except that 8 g of GMA was used instead of ECMMA in Example 1.
비교예 2Comparative Example 2
상기 실시예 1에서 ECMMA를 대신하여 GMA 10 g을 사용한 것을 제외하고는 상기 실시예 1과 동일한 방법으로 OLED용 폴리이미드 감광성 수지 조성물을 제조하였다.The polyimide photosensitive resin composition for OLED was manufactured in the same manner as in Example 1, except that 10 g of GMA was used instead of ECMMA in Example 1.
상기 실시예 1 내지 4 및 비교예 1 내지 2에서 제조된 OLED용 폴리이미드 감광성 수지 조성물을 이용하여 하기와 같은 방법으로 물성을 평가한 후, 그 결과를 하기 표 1에 나타내었다.After evaluating physical properties by the following method using the polyimide photosensitive resin composition for OLED prepared in Examples 1 to 4 and Comparative Examples 1 and 2, the results are shown in Table 1 below.
가) 감도- ITO가 증착된 10 mm × 10 mm 글래스(glass) 기판 상에 스핀코터를 사용하여 상기 실시예 1 내지 4 및 비교예 1 내지 2에서 제조한 OLED용 폴리이미드 감광성 수지 조성물을 도포한 뒤, 110 ℃로 2 분간 핫 플레이트상에서 프리베이크하여 두께가 3.0 ㎛인 막을 형성하였다. 형성한 막에 소정 패턴 마스크(pattern mask)를 사용하여 365 ㎚에서의 강도가 10 ㎽/㎠인 자외선을 20 ㎛ Isolate Pattern CD기준 Dose량을 조사한 후, 테트라메틸 암모늄히드록시드 2.38 중량%의 수용액으로 23 ℃에서 100 초간 현상한 후, 초순수로 1 분간 세정하였다. 상기에서 현상된 패턴을 오븐 속에서 230 ℃로 60 분간 가열하여 경화시켜 두께 2.5 ㎛의 패턴 막을 얻었다.A) Sensitivity- The polyimide photosensitive resin composition for OLEDs prepared in Examples 1 to 4 and Comparative Examples 1 to 2 was coated on a 10 mm × 10 mm glass substrate on which ITO was deposited using a spin coater. Thereafter, the film was prebaked at 110 ° C. on a hot plate for 2 minutes to form a film having a thickness of 3.0 μm. 2.38% by weight of an aqueous solution of tetramethyl ammonium hydroxide after irradiating 20 µm Isolate Pattern CD-based Dose amount to ultraviolet rays having an intensity of 10 mW / cm 2 at 365 nm using a predetermined pattern mask on the formed film. After developing at 23 degreeC for 100 second, it wash | cleaned for 1 minute with ultrapure water. The developed pattern was cured by heating at 230 ° C. for 60 minutes in an oven to obtain a pattern film having a thickness of 2.5 μm.
나) 용해도 - 전구체 제조 후 석출 유무 확인 및 감광성 수지 조성물 제조 후 3시간동안 교반 후 석출물 및 미용해물 유무 확인, 추가 3시간 교반 후 확인하였다. 3시간 교반 후 석출물 및 미용해물 없음 (◎), 3시간 교반 후에는 석출물 및 미용해물이 있으나 추가 3시간 교반 후에는 없음 (○), 6시간 교반 후에도 석출물 및 미용해물이 있음 (×).B) Solubility-After the preparation of the precursor confirmed the presence of precipitation and after the preparation of the photosensitive resin composition after stirring for 3 hours to confirm the presence of precipitates and undissolved, it was confirmed after stirring for an additional 3 hours. No precipitates and undissolved products after stirring for 3 hours (◎), Precipitations and undissolved products after 3 hours of stirring but not after 3 hours of stirring (○), Precipitates and undissolved products after 6 hours of stirring (×).
표 1
구분 용해성 포지티브 감도 (mJ/㎠)
실시예 1 95
실시예 2 90
실시예 3 93
실시예 4 90
비교예 1 130
비교예 2 × 미용해로 평가불가
Table 1
division Solubility Positive Sensitivity (mJ / ㎠)
Example 1 95
Example 2 90
Example 3 93
Example 4 90
Comparative Example 1 130
Comparative Example 2 × Not rated for beauty
상기 표 1에 나타낸 바와 같이, 본 발명에 따라 제조한 실시예 1 내지 4의 OLED용 폴리이미드 감광성 수지 조성물은 용해도 및 감도가 동시에 모두 우수하였으며, 이와 같은 결과로부터 본 발명에 따른 OLED용 폴리이미드 감광성 수지 조성물은 OLED 제조공정, 특히 AMOLED 제조공정에 적용함에 있어 보다 우수한 결과를 얻을 수 있음을 알 수 있었다. As shown in Table 1, the polyimide photosensitive resin composition for OLED of Examples 1 to 4 prepared according to the present invention was excellent in both solubility and sensitivity at the same time, from the above results, polyimide photosensitive for OLED according to the present invention It was found that the resin composition can obtain more excellent results when applied to the OLED manufacturing process, especially the AMOLED manufacturing process.
이에 반해, 비교예 1 의 경우 용해도가 떨어지고 감도가 낮아 OLED 공정에 적용하기가 어렵고, 비교예 2 의 경우에는 전구체 제조시 Gelation 으로 인한 석출물이 발생하였고, 감광성 수지 조성물 제조 후에도 여전히 석출물이 잔존하여 감도 평가가 불가하여 적용이 어려움을 알 수 있었다.On the contrary, in the case of Comparative Example 1, the solubility was low and the sensitivity was difficult to be applied to the OLED process.In the case of Comparative Example 2, precipitates were generated due to gelation during the preparation of the precursor, and precipitates still remained after the photosensitive resin composition was prepared. It was difficult to evaluate because it was impossible to evaluate.
본 발명에 따른 OLED용 폴리이미드 감광성 수지 조성물은 분자량 및 용해도 조절이 용이한 폴리이미드 전구체를 사용하여 OLED의 유기절연막 형성에 적합하며, 특히 감도를 현저히 개선시킬 수 있다.The polyimide photosensitive resin composition for OLEDs according to the present invention is suitable for forming an organic insulating film of an OLED by using a polyimide precursor that is easy to control molecular weight and solubility, and in particular, can significantly improve sensitivity.

Claims (10)

  1. OLED용 감광성 수지 조성물에 있어서,In the photosensitive resin composition for OLED,
    a) i) 하기 화학식 1로 표시되는 폴리이미드 전구체, ii) 폴리하이드록시스티렌(poly hydroxy styrene)을 포함하는 레진;a) a resin comprising i) a polyimide precursor represented by Formula 1 below, and ii) poly hydroxy styrene;
    b) 1,2-퀴논디아지드 화합물;b) 1,2-quinonediazide compounds;
    c) 가교제;c) crosslinking agents;
    d) 용제d) solvent
    를 포함하는 것을 특징으로 하는 OLED용 폴리이미드 감광성 수지 조성물:Polyimide photosensitive resin composition for OLED, comprising:
    [화학식 1][Formula 1]
    Figure PCTKR2012008362-appb-I000003
    Figure PCTKR2012008362-appb-I000003
    상기 화학식 1에서, In Chemical Formula 1,
    X는 4가의 유기기이며, Y는 2가의 유기기이며, R은 각각 독립적으로 epoxy cyclohexyl methyl methacrylate(ECMMA) 또는 methylglycidyl methacrylate(MGMA)이며, n은 3 내지 100000의 정수이다.X is a tetravalent organic group, Y is a divalent organic group, R is independently epoxy cyclohexyl methyl methacrylate (ECMMA) or methylglycidyl methacrylate (MGMA), and n is an integer of 3-100000.
  2. 제1항에 있어서,The method of claim 1,
    a) i) 상기 화학식 1로 표시되는 폴리이미드 전구체 40-90 중량%, ii) 폴리하이드록시스티렌(poly hydroxy styrene) 10-60 중량%를 포함하는 레진 100 중량부;a) 100 parts by weight of a resin containing i) 40-90 wt% of the polyimide precursor represented by Formula 1, ii) 10-60 wt% of poly hydroxy styrene;
    b) 1,2-퀴논디아지드 화합물 5-50 중량부;b) 5-50 parts by weight of 1,2-quinonediazide compound;
    c) 가교제 1-30 중량부;c) 1-30 parts by weight of a crosslinking agent;
    d) 용제를 전체 폴리이미드 감광성 수지 조성물의 고형분 함량이 5 내지 50 중량%가 되도록 포함하는 것을 특징으로 하는 OLED용 폴리이미드 감광성 수지 조성물.d) The polyimide photosensitive resin composition for OLED containing the solvent so that solid content of the whole polyimide photosensitive resin composition may be 5 to 50 weight%.
  3. 제1항에 있어서,The method of claim 1,
    상기 화학식 1의 X는 2,2-bis(3,4-anhydrodicarboxyphenyl)Hexafluoropropane(6FDA), 5-(2,5-Dioxotetrahydrofuryl)-3-methyl-3-cyclohexene-1,2-dicarboxylic Anhydride(DOCDA), 또는 2,3,3',4'-Biphenyl tetracarboxylic dianhydride(a-BPDA)로부터 유도된 4가의 유기기인 것을 특징으로 하는 OLED용 감광성 수지 조성물.X in Formula 1 is 2,2-bis (3,4-anhydrodicarboxyphenyl) Hexafluoropropane (6FDA), 5- (2,5-Dioxotetrahydrofuryl) -3-methyl-3-cyclohexene-1,2-dicarboxylic Anhydride (DOCDA) Or a tetravalent organic group derived from 2,3,3 ', 4'-Biphenyl tetracarboxylic dianhydride (a-BPDA).
  4. 제1항에 있어서,The method of claim 1,
    상기 화학식 1의 Y는 4,4'-diamino-3,3'-dimethyl-diphenylmethane(DADM), 2,2-Bis(3-amino-4-hydroxyphenyl)-hexafluoropropane(Bis-APAF), 또는 1,3-Bis(3-aminopropyl)tetramethyldisiloxane(SiDA(PAM-E))으로부터 유도된 2가의 유기기인 것을 특징으로 하는 OLED용 감광성 수지 조성물.Y in Formula 1 is 4,4'-diamino-3,3'-dimethyl-diphenylmethane (DADM), 2,2-Bis (3-amino-4-hydroxyphenyl) -hexafluoropropane (Bis-APAF), or 1, A photosensitive resin composition for OLED, which is a divalent organic group derived from 3-Bis (3-aminopropyl) tetramethyldisiloxane (SiDA (PAM-E)).
  5. 제1항에 있어서,The method of claim 1,
    상기 a)의 레진이 노볼락 수지를 더욱 포함하는 것을 특징으로 하는 OLED용 감광성 수지 조성물.The resin of a) further comprises a novolak resin, the photosensitive resin composition for OLED.
  6. 제1항에 있어서,The method of claim 1,
    상기 c)의 멜라닌계 가교제가 요소와 포름알데히드의 축합생성물, 멜라민과 포름알데히드의 축합생성물, 메틸올요소알킬에테르류, 및 메틸올멜라민알킬에테르류로 이루어지는 군으로부터 1 종 이상 선택되는 것을 특징으로 하는 OLED용 감광성 수지 조성물.The melanin crosslinking agent of c) is selected from the group consisting of condensation products of urea and formaldehyde, condensation products of melamine and formaldehyde, methylol urea alkyl ethers, and methylol melamine alkyl ethers. Photosensitive resin composition for OLED.
  7. 제1항에 있어서,The method of claim 1,
    상기 e)의 용매가 감마부티로락톤과 프로필렌글리콜메틸에테르아세테이트(PGMEA)가 각각 10-90:10-90의 중량비로 혼합된 용매인 것을 특징으로 하는 OLED용 감광성 수지 조성물.The solvent of e) is a photosensitive resin composition for OLED, wherein gamma butyrolactone and propylene glycol methyl ether acetate (PGMEA) are each mixed in a weight ratio of 10-90: 10-90.
  8. 제1항에 있어서,The method of claim 1,
    상기 감광성 수지 조성물이 광산발생제를 더욱 포함하는 것을 특징으로 하는 OLED용 감광성 수지 조성물.The photosensitive resin composition for OLED, wherein the photosensitive resin composition further includes a photoacid generator.
  9. 제1항 내지 제8항 중 어느 한 항 기재의 감광성 수지 조성물의 경화체를 포함하는 OLED 기판.The OLED substrate containing the hardened | cured material of the photosensitive resin composition of any one of Claims 1-8.
  10. 제1항 내지 제8항 중 어느 한 항 기재의 감광성 수지 조성물을 이용한 OLED 기판의 패턴형성방법.The pattern formation method of the OLED substrate using the photosensitive resin composition of any one of Claims 1-8.
PCT/KR2012/008362 2011-10-18 2012-10-15 Polyimide light-sensitive resin composition for oled WO2013058506A2 (en)

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