WO2013058052A1 - Bonding device and bonding method - Google Patents

Bonding device and bonding method Download PDF

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Publication number
WO2013058052A1
WO2013058052A1 PCT/JP2012/074128 JP2012074128W WO2013058052A1 WO 2013058052 A1 WO2013058052 A1 WO 2013058052A1 JP 2012074128 W JP2012074128 W JP 2012074128W WO 2013058052 A1 WO2013058052 A1 WO 2013058052A1
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WO
WIPO (PCT)
Prior art keywords
holding
wafer
holding part
bonding
main body
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PCT/JP2012/074128
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French (fr)
Japanese (ja)
Inventor
直樹 秋山
杉山　雅彦
元 古家
充一 中村
陽介 大森
Original Assignee
東京エレクトロン株式会社
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Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Publication of WO2013058052A1 publication Critical patent/WO2013058052A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment

Definitions

  • the present invention relates to a laminating apparatus for laminating a plate-like first member and a second member, and a laminating method using the laminating apparatus.
  • a glass substrate or another wafer, which is a reinforcing substrate is attached to a semiconductor wafer (hereinafter simply referred to as a “wafer”) for the purpose of reinforcing the semiconductor wafer (hereinafter simply referred to as “wafer”) in response to a demand for a large-diameter semiconductor wafer.
  • Wafer semiconductor wafer
  • a laminating device has been developed.
  • a mounting table for mounting a thin plate-like first member, a holding plate for holding a thin plate-like second member arranged opposite to the upper portion of the mounting table, and the holding plate A bonding apparatus having a vacuum chamber ring provided on the outer periphery has been proposed.
  • this bonding apparatus first, the holding plate and the vacuum chamber ring are lowered to the mounting table side, the vacuum chamber ring and the table are brought into contact with each other through the seal ring, and then the holding plate, the vacuum chamber ring and the mounting plate are mounted.
  • a vacuum chamber is formed with the mounting table, the atmosphere gas in the vacuum chamber is sucked from the opening formed on the side surface of the vacuum chamber ring, the vacuum chamber is made into a vacuum atmosphere, and then the holding plate is mounted on the mounting table By further lowering to the side, the thin plate-like first member and the second member are bonded together (for example, see Patent Document 1).
  • the bonding apparatus can suppress the generation of voids in the bonded body in which the first member and the second member are bonded
  • the compressive stress on the outer peripheral portion of the bonded body at the time of bonding is the compressive stress on the central portion.
  • the thickness of the outer peripheral portion of the bonded body becomes larger than the thickness of the central portion, and the compressive stress on the entire outer peripheral portion of the bonded body at the time of bonding tends to vary,
  • the thickness of the outer peripheral part of a bonding body becomes difficult to become uniform.
  • the problem of the present invention is that there is no variation in the thickness between the central portion and the outer peripheral portion of the bonded body obtained by bonding the first member and the second member, and the thickness of the outer peripheral portion is uniform over the entire circumference. It is providing the bonding apparatus and the bonding method which can obtain a bonding body.
  • a bonding apparatus for bonding a plate-like first member and a second member, wherein the first member is placed on an upper surface.
  • An air intake mechanism that depressurizes a space formed between the second holding portion and a rigid edge portion, and the edge portion is divided and the outer peripheral portion is supported by the edge portion.
  • the holding unit main body is made of an elastic body in which a part of the holding unit main body is bent by a predetermined pressure.
  • the edge portion is formed on a support plate provided above the second holding portion by four to eight fishing support members provided at equal intervals along the circumferential direction. It is preferable that it is supported.
  • the number of the fishing support members is preferably six.
  • WHEREIN It has an airtight holding mechanism for hold
  • the mechanism is an annular sealing material provided along the outer peripheral portion of the lower surface of the second holding portion, and is a space surrounded by the first holding portion, the second holding portion, and the sealing material.
  • a sealing member that retains hermeticity, and a first member that is provided on the outer side of the sealing member and that is held by the first holding member in contact with the lower surface of the second holding portion and the second holding member It is preferable to have a height adjusting mechanism that adjusts the distance between the second member held by the member.
  • the height adjusting mechanism may maintain the airtightness of the space surrounded by the first holding portion, the second holding portion, and the sealing material, and It is preferable to adjust the distance between the member and the second member.
  • a pressurizing mechanism that is provided on an upper portion of the second holding portion and presses the second holding portion downward.
  • the said pressurization mechanism has a pressure vessel which can be extended-contracted in the perpendicular direction provided so that the upper surface of the said holding
  • a laminating method for laminating a plate-like first member and a second member using a laminating apparatus includes a first holding portion that holds the first member placed on the upper surface, a second holding portion that is disposed opposite to the upper portion of the first holding portion and holds the second member, and the first An intake mechanism that depressurizes a space formed between the first holding portion and the second holding portion, and the second holding portion includes a rigid edge portion and the edge portion.
  • a holding portion main body that is divided and has an outer peripheral portion supported by the edge portion, and the holding portion main body is made of an elastic body in which a part of the holding portion main body is bent by a predetermined pressure.
  • the predetermined interval is a part of the second member held by the holding part body when the holding part body is bent in the contacting step. Is an interval that contacts the first member held by the first holding portion.
  • the thickness of the central portion and the outer peripheral portion of the bonded body obtained by bonding the first member and the second member there is no variation in the thickness of the central portion and the outer peripheral portion of the bonded body obtained by bonding the first member and the second member, and the thickness of the outer peripheral portion is uniform over the entire circumference. A bonded body can be obtained.
  • FIG. 1 is a longitudinal sectional view showing a schematic configuration of a main part of a bonding apparatus to which the present invention is applied.
  • a laminating apparatus 100 includes a lower chuck 110 as a first holding unit for mounting and holding a thin wafer W1 as a first member on the upper surface, and a thin plate as a second member. And an upper chuck 111 as a second holding part for holding the wafer W2 by suction on its lower surface.
  • the upper chuck 111 is disposed above the lower chuck 110 so as to face the lower chuck 110, and a pressure vessel as a pressurizing mechanism that presses the upper chuck 111 against the lower chuck 110 is disposed above the upper chuck 111. 120 is provided.
  • the wafer W1 and the wafer W2 are bonded as follows.
  • the wafer W1 is placed and held on the upper surface of the lower chuck 110, and the wafer W2 is sucked and held on the upper chuck 111 by, for example, a suction mechanism (not shown).
  • the space S surrounded by the lower chuck 110, the upper chuck 111, and an annular sealing material (not shown) provided on the outer periphery of the lower surface of the upper chuck 111 is reduced to a predetermined pressure, and the upper chuck 111 and the upper chuck The central portion of the wafer W2 held by the chuck 111 is bent, and thereby the central portion of the wafer W2 is brought into contact with the central portion of the wafer W1.
  • the pressure in the space S is reduced so as to be lower than the suction pressure of the upper chuck 111 holding the wafer W2, and the wafer W2 is detached from the upper chuck 111. 1, the pressure vessel 120 is extended downward in FIG. 1, thereby pressing the wafer W2 toward the wafer W1 placed on the lower chuck 110 so that the entire surface of the wafer W2 is covered with the wafer W1. Affix to the entire surface.
  • the bonded body thus obtained is required to have a film thickness uniformity on the micron order, for example, 1 to 3 ⁇ m level in order to ensure the quality as the wafer W1.
  • the pressing force acting on the outer peripheral portion of the bonded body is the pressing force acting on the central portion.
  • the thickness of the outer peripheral part in a bonding body becomes thinner than the thickness of a center part by this.
  • the present inventor has examined the relationship between the rigidity of the lower chuck and the upper chuck in the bonding apparatus and the compressive stress caused by the pressing force acting on the central portion and the outer peripheral portion of the bonded body.
  • the part In order to suppress the generation of voids in the bonded body, the part is required to be flexible so that a part thereof is bent at a predetermined pressure, while compressive stress acting on the outer peripheral part and the central part of the bonded body is applied.
  • the rigidity of the outer peripheral part needs to be larger than the rigidity of the central part, and the present invention has been completed.
  • the second holding portion in the bonding apparatus of the present invention has a rigid edge portion and a holding portion main body that is divided from the edge portion and has an outer peripheral portion supported by the edge portion.
  • the part body is made of an elastic body in which a part of the holding part body is bent by a predetermined pressure.
  • FIG. 2 is a longitudinal sectional view showing a schematic configuration of the bonding apparatus according to the embodiment of the present invention.
  • a bonding apparatus 50 includes a lower chuck 10 as a first holding member that holds a wafer W1 that is a first member on the upper surface, and a second holding that holds a wafer W2 that is a second member on the lower surface.
  • the upper chuck 11 is provided as a part, and the upper chuck 11 is disposed above the lower chuck 10 so as to face the lower chuck 10.
  • the lower chuck 10 is fixed on a frame-like housing 12, and the housing 12 is mainly composed of a top plate 12a, a bottom plate 12b, and a side plate 12c disposed therebetween.
  • the lower chuck 10 is made of a material having a strength that does not deform even when a load is applied to the wafer W1 and the wafer W2, for example, a ceramic such as silicon carbide ceramic or aluminum nitride ceramic. Note that aluminum can also be applied as a constituent material of the lower chuck 10. In this case, in order to reduce the deformation amount of the lower chuck 10, it is preferable that the thickness is, for example, 50 mm or more.
  • the distance between the wafer W1 and the wafer W2 in the bonding space S is adjusted by adjusting the height of the upper chuck 11 by contacting and supporting the side surface of the lower chuck 10 against the lower surface of the upper chuck 11.
  • a height adjusting mechanism 30 is provided.
  • the bonding space S refers to a space surrounded by the lower chuck 10, the upper chuck 11, and an O-ring 14 provided on the outer peripheral lower surface of the upper chuck 11 (see FIG. 6B described later).
  • the height adjusting mechanism 30 is disposed so as to be positioned outside the O-ring 14 provided on the lower surface of the upper chuck 11 when contacting the lower surface of the upper chuck 11.
  • three height adjusting mechanisms 30 are arranged at equal intervals along the outer periphery of the lower chuck 10 having a circular upper plane, for example.
  • FIG. 3 is a side view showing a schematic configuration of the height adjusting mechanism 30 in the bonding apparatus of FIG.
  • the height adjusting mechanism 30 includes a support base 31, a rotary shaft 34 supported in parallel to the support base 31, and is fixed to the rotary shaft 34 and rotates as the rotary shaft 34 rotates. It is mainly composed of the eccentric roll 32.
  • the center C1 of the eccentric roll 32 is eccentric by a predetermined dimension from the center C2 of the rotating shaft 34 as shown in FIG. Accordingly, the height adjustment mechanism 30 can adjust the height of the upper chuck 11 with respect to the lower chuck 10 by changing the height of the vertical apex of the eccentric roll 32 by the rotation of the rotary shaft 34.
  • the amount of eccentricity between the center C1 of the eccentric roll 32 and the center C2 of the rotary shaft 34 is, for example, 0.1 to 2.0 mm.
  • the height adjusting mechanism 30 adjusts the interval between the wafer W1 and the wafer W2 in a state where the airtightness of the bonding space S is maintained by an airtight holding mechanism described later.
  • the upper chuck 11 is mainly composed of a holding portion main body 11a for holding the wafer W2 and an edge portion 11b for supporting the outer peripheral portion of the holding portion main body 11a.
  • the holding member body 11a is made of a flexible material, for example, duralumin. A part of the plate-like duralumin can be bent by applying a predetermined pressure, for example, the central part. As a result, as will be described later, voids can be prevented from being generated in the step of reducing the pressure in the bonding space S when the wafer W1 is bonded to the wafer W2.
  • the edge part 11b which supports the outer peripheral part of the holding member main body 11a is comprised by highly rigid material, for example, stainless steel (SUS) material.
  • the rigidity of the upper chuck 11, particularly the outer peripheral portion is secured, and the flexibility in the central portion is maintained.
  • the compressive stress on the outer peripheral portion of the bonded body and the compressive stress on the central portion can be balanced.
  • the compressive stress along the circumferential direction of the outer peripheral portion with respect to the bonded body can be balanced. it can.
  • the action of balancing the compressive stress along the circumferential direction in the outer peripheral part of the bonded body cooperates with the action of balancing the compressive stress of the outer peripheral part and the compressive stress of the central part.
  • the total compressive stress acting on the shaped bonded body is balanced, and the thickness uniformity in all directions of the bonded body can be ensured.
  • FIG. 5 is a plan view showing the edge portion 11b of the upper chuck 11 in the bonding apparatus of FIG.
  • the edge portion 11b of the upper chuck 11 has an annular shape, and has a step structure including a thick plate portion 11b1 that forms the outer peripheral portion and a thin plate portion 11b2 that forms the inner peripheral portion.
  • a holding body 11a (see FIG. 2) that holds the wafer W2 is fitted into a step portion between the thick plate portion 11b1 and the thin plate portion 11b2, and is supported by the thin plate portion 11b2.
  • the thickness in the circumferential direction of the thick plate portion 11b1 and the thin plate portion 11b2 is uniform.
  • the edge portion 11b is supported by a support plate 16 (see FIG. 2) disposed on the upper portion thereof by, for example, six fishing support members 15 that are arranged uniformly along the circumferential direction of the thick plate portion 11b1. Yes. Therefore, the outer peripheral part of the holding part main body 11a is uniformly supported by the thin plate part 11b2 of the edge part 11b.
  • the fishing support member 15 is configured to be extendable in the vertical direction by, for example, a spring member 15a.
  • An O-ring 14 as an annular seal member is disposed on the lower surface of the edge portion 11b along the annular circumferential direction of the edge portion 11b.
  • the O-ring 14 maintains the airtightness of the bonding space S.
  • the O-ring 14 has elasticity, and for example, a heat-resistant perfluoroelastomer is preferably used as the material.
  • required of the O-ring 14 is about 150 degreeC, for example, fluororubber can also be used as a constituent material.
  • the O-ring 14 and the height adjusting mechanism 30 constitute an airtight holding mechanism that holds the airtightness of the bonding space S.
  • the thickness of the holding part main body 11a is determined by analysis using a finite element method. For example, when the diameter of the wafer W2 is set to 300 mm and the diameter of the sealing material 14 provided along the outer periphery of the lower surface of the edge portion 11b is set to 306 mm (simulation), the thickness of the holding portion main body 11a is about 16 mm.
  • the central portion of the bonding apparatus can be practically bent to such an extent that it can be applied to the holding body 11a.
  • the holding portion main body 11a bends, the central portion of the wafer W2 held by the upper chuck 11 needs to come into contact with the wafer W1 disposed therebelow.
  • the holding portion main body 11a is configured such that the central portion thereof is bent by a predetermined dimension that is equal to or larger than the interval between the wafer W2 and the wafer W1 in the bonding space S (see FIG. 6C described later).
  • the total thickness when the wafer W2 and the wafer W1 are bonded to each other is 1.2 mm
  • the thickness of the thin plate portion 11b2 supporting the holding portion main body 11a in the edge portion 11b of the upper chuck 11 is set to 0.
  • the interval between the thin plate portion 11b2 of the edge portion 11b and the lower chuck 10 in the bonding space S is set to 0.5 mm
  • the interval between the wafer W2 and the wafer W1 is 0.2 mm.
  • the thickness of the holding part main body 11a of the upper chuck 11 is 16 mm
  • the deflection amount of the central part is 0.2 mm
  • the central part of the wafer W2 is in contact with the wafer W1.
  • the central part which is a part of the holding part main body 11a bends. Therefore, the predetermined interval in the case where the interval between the wafer W1 and the wafer W2 when the wafer W1 and the wafer W2 are bonded to each other is set to a predetermined interval, as the holding portion main body 11a of the upper chuck 11 is bent.
  • the interval at which the central portion of the wafer W2 contacts the wafer W1 for example, an interval of 0.2 mm or less.
  • a suction tube 17 for sucking and holding the wafer W2 is provided inside the holding body 11a of the upper chuck 11.
  • the suction pipe 17 is connected to a decompression device such as a vacuum pump (not shown).
  • an intake pipe 18 for decompressing the bonding space S is provided inside the holding portion main body 11a.
  • One end of the intake pipe 18 opens into the bonding space S at a place where the wafer W2 is not held on the lower surface of the holding portion main body 11a.
  • the other end of the intake pipe 18 is connected to a decompression device such as a vacuum pump (not shown).
  • the intake pipe 18 and the pressure reducing device connected to the intake pipe 18 constitute an intake mechanism.
  • a pressure mechanism 20 that presses the upper chuck 11 downward in the vertical direction is provided between the upper part of the upper chuck 11, that is, between the upper surface of the upper chuck 11 and the lower surface of the support plate 16 that supports the upper chuck 11.
  • the pressurizing mechanism 20 is mainly composed of an expandable / contractible pressure vessel 21 and a fluid supply pipe 22 for supplying, for example, compressed air into the pressure vessel 21.
  • the pressure vessel 21 is configured by, for example, a stainless steel bellows, and the area of the lower surface thereof is configured to be substantially equal to the upper area of the holding body 11a of the upper chuck 11, for example. Accordingly, when a fluid, for example, compressed intake air is supplied from the fluid supply pipe 22 to the pressure vessel 21, the pressure vessel 21 extends downward and presses the upper plane of the holding portion main body 11a evenly downward.
  • the upper chuck structure 40 is formed by the bottom support plate 40b fixed to the lower end which is the other end of the support member 40a.
  • an air cylinder 25 is arranged as a moving mechanism between the bottom support plate 40b of the upper chuck structure 40 and the bottom plate 12b of the housing 12. By operating the air cylinder 25, the upper chuck structure is operated. 40 moves up and down together with the upper chuck 11 and the pressurizing mechanism 20 to change the relative position of the upper chuck 11 with respect to the lower chuck 10. Therefore, the air cylinder 25 forms the bonding space S by lowering the upper chuck 11 and bringing it close to the lower chuck 10 when bonding the wafer W1 and the wafer W2 (see FIG. 6B described later).
  • the bonding of the wafer W1 and the wafer W2 is performed as follows.
  • 6A to 6F are diagrams each showing a part of the steps of the bonding method according to the embodiment of the present invention.
  • the wafer W1 is placed and held on the upper surface of the lower chuck 10, and the lower chuck 10 is held on the lower surface of the holding body 11a of the upper chuck 11.
  • the wafer W2 is sucked and held, and the wafer W2 and the wafer W1 are arranged to face each other (FIG. 6A).
  • the wafer W1 and the wafer W2 have, for example, circular thin plate shapes having substantially the same diameter, and an adhesive (not shown) is applied in advance to the upper surface of the wafer W1 or the lower surface of the wafer W2.
  • the eccentric roll 32 of the height adjusting mechanism 30 is brought into contact with the lower surface of the edge portion 11b of the upper chuck 11 by the air cylinder 25 (see FIG. 2).
  • the upper chuck 11 is lowered.
  • the height of the contact point between the eccentric roll 32 and the lower surface of the edge portion 11b is set so that the distance between the wafer W1 and the wafer W2 is a predetermined distance, for example, 0.2 mm as described above (FIG. 6B).
  • a sealed bonding space S is formed between the lower chuck 10 and the upper chuck 11, and the vertical position of the upper chuck 11 is fixed in this state.
  • the pressure in the bonding space S becomes 0.3 atm
  • the temperature of the wafer W1, the wafer W2, and the adhesive is, for example, a softening temperature of the adhesive by a heating means (not shown) provided in the lower chuck 10 or the upper chuck 11, such as an electric heater, for example, 200 to Heat to 250 ° C.
  • a heating means not shown
  • the adsorption pressure (0.1 atm) for attracting the wafer W2 by the holding unit main body 11a is smaller than the pressure (0.3 atm) in the bonding space S, the wafer W2 is held by the holding unit main body 11a. The state held in
  • the holding body 11a of the upper chuck 11 is moved to the wafer W2.
  • the wafer W2 falls downward, and the entire surface of the wafer W2 comes into contact with the entire surface of the wafer W1 (FIG. 6D).
  • the wafer W2 sequentially comes into contact with the wafer W1 from the central part in contact with the wafer W1 toward the radially outer side. Therefore, air is not confined on the bonding surface between the wafer W2 and the wafer W1, and no void is generated.
  • the eccentric roll 32 of the height adjustment mechanism 30 is rotated to eliminate the pressing force that pushes the upper chuck 11 upward, and the upper chuck 11 is brought into contact with the lower chuck 11 via the wafer W1 and the wafer W2 ( FIG. 6E).
  • compressed air is supplied from the fluid supply pipe 22 into the pressure vessel 21 of the pressurizing mechanism 20 to extend the pressure vessel 21 downward (see FIG. 2), thereby the wafer W2 and the wafer W1. Are bonded together to obtain a bonded body 35 (FIG. 6F).
  • the pressing force at the outer peripheral portion of the bonded body 35 tends to be larger than the pressing force at the central portion, but in the present embodiment, the outer peripheral portion of the upper chuck 11 is configured by a highly rigid edge portion 11b.
  • the pressing force acting on the outer peripheral portion of the bonded body 35 can be offset by the highly rigid edge portion 11b. Accordingly, it is possible to balance the thicknesses of the central portion and the outer peripheral portion of the bonded body 35.
  • the upper chuck 11 includes the holding unit main body 11a that holds the wafer W2 and the edge portion 11b that is separated from the holding unit main body 11a and supports the outer peripheral portion of the holding unit main body 11a.
  • the rigidity of the upper chuck 11, particularly the rigidity of the outer peripheral portion of the upper chuck 11, is prevented to prevent variation in compressive stress between the central portion and the outer peripheral portion of the upper chuck 11 and the thickness of the central portion of the bonded body 35.
  • the thickness of the outer peripheral portion can be made uniform, and the flexibility of the holding portion main body 11b can be ensured.
  • the present embodiment in the upper chuck 11, it is possible to achieve both the flexibility for avoiding the generation of voids and the rigidity for suppressing the thickness variation in the bonded body 35.
  • the bonded body 35 having a uniform thickness can be obtained while preventing the generation of voids.
  • the upper chuck 11 is constituted by the holding portion main body 11a and the edge portion 11b that supports the outer peripheral portion of the holding portion main body 11a, whereby the holding portion main body that holds the wafer W2.
  • the size of 11a can be made relatively small. As a result, the rigidity of the holder main body 11a can be improved, and the amount of deformation of the holder main body 11a and the upper chuck 11 as a whole can be reduced.
  • the number of the fishing support members 15 that are evenly arranged along the circumferential direction of the edge portion 11b of the upper chuck 11 is set to six, so that the upper chuck 11 is held by the holding portion. Due to the synergistic effect of the configuration of the main body 11a and the edge portion 11b, there is no variation in compressive stress along the circumferential direction acting on the outer peripheral portion of the bonded body 35, and in the circumferential direction of the outer peripheral portion of the bonded body 35. The thickness along the line can be made almost uniform.
  • the fishing support member 16 can also be four or eight other than six.
  • the rigidity of the outer peripheral portion of the upper check 11 is greatly affected by the thickness of the edge portion 11b, particularly the thin plate portion 11b2 of the edge portion 11b. Therefore, in order to ensure the thickness of the thin plate portion 11b2, the outer peripheral portion of the lower chuck 10 can be partially cut away, and the thickness of the thin plate portion 11b2 can be increased by a thickness corresponding to the cutout portion.
  • a heating device is provided in the lower chuck 10, the upper chuck 11 or a member in the vicinity thereof in order to heat the wafer W1, the wafer W2, and the adhesive for adhering them at the time of bonding.
  • a known electric heater or the like is suitably used as the apparatus.
  • the heating temperature is a temperature necessary for softening the adhesive, and is, for example, 150 to 250 ° C., preferably 200 to 250 ° C.
  • a cooling device can be provided to cool the bonded body 35 and the like as necessary.
  • the cooling device for example, an air cooling device for bringing an air flow into contact with the bonded body 35, a cooling device for placing the bonded body 35 on a cooling plate, or the like is preferably used. In this case, if the bonded body 35 is rapidly cooled from one side, warping may occur. Therefore, it is preferable to cool from one side after cooling from both sides or lowering the temperature to some extent.
  • zipper 11 can be adjusted, and in this, in the outer peripheral part of the bonding body 35 The thickness can also be adjusted.
  • an air cylinder device can be applied in place of the spring member, whereby the fishing support stress can be adjusted during the bonding operation, and the operability is improved.
  • the present invention is not limited to this.
  • the glass substrate G can also be bonded to the wafer W1, and the bonding member for obtaining the bonded body 35 is not particularly limited.

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
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Abstract

Provided is a bonding device that is capable of obtaining a bonded body in which a first member and a second member are bonded together, such that said bonded body has no thickness variation between a central portion and edge portion thereof, and the thickness of the edge portion is uniform over the entire periphery thereof. The bonding device (50) comprises: a bottom chuck (10) that places and holds a wafer (W1) on the top surface thereof; a top chuck (11) that is placed opposite the top of the bottom chuck (10) and holds a wafer (W2); and a suction mechanism (18) that depressurizes a space (S) formed between the bottom chuck (10) and the top chuck (11). The top chuck (11) comprises a rigid edge portion (11b) and a holding section body (11a) partitioned from the edge portion (11b), and with a periphery supported by the edge portion (11b). The holding section body (11a) comprises an elastic body such that the central portion of the holding section body (11a) bends at a specified pressure of for example, 0.7 atmosphere.

Description

貼り合わせ装置及び貼り合わせ方法Bonding apparatus and bonding method
　本発明は、板状の第１部材と第２部材を貼り合わせる貼り合わせ装置及び該貼り合わせ装置を用いた貼り合わせ方法に関する。 The present invention relates to a laminating apparatus for laminating a plate-like first member and a second member, and a laminating method using the laminating apparatus.
　近年、半導体ウエハの大口径化及び薄肉化の要求に伴い、半導体ウエハ（以下、単に「ウエハ」という。）を補強する目的で、当該ウエハに補強用基板であるガラス基板又は別のウエハを貼り合わせる貼り合わせ装置が開発されている。 In recent years, a glass substrate or another wafer, which is a reinforcing substrate, is attached to a semiconductor wafer (hereinafter simply referred to as a “wafer”) for the purpose of reinforcing the semiconductor wafer (hereinafter simply referred to as “wafer”) in response to a demand for a large-diameter semiconductor wafer. A laminating device has been developed.
　このような貼り合わせ装置として、薄板状の第１部材を載置する載置テーブルと、該載置テーブルの上部に対向配置され薄板状の第２部材を保持する保持板と、該保持板の外周に設けられた真空チャンバーリングとを有する貼り合わせ装置が提案されている。この貼り合わせ装置では、先ず、保持板と真空チャンバーリングを載置テーブル側に下降させ、真空チャンバーリングとテーブルとをシールリングを介して当接させ、その後、保持板と、真空チャンバーリングと載置テーブルとで真空チャンバーを形成し、真空チャンバーリングの側面に形成された開口部から真空チャンバー内の雰囲気ガスを吸気して、当該真空チャンバー内を真空雰囲気にし、次いで、保持板を載置テーブル側にさらに下降させることによって、薄板状の第１部材と第２部材の貼り合わせが行われる（例えば、特許文献１参照）。 As such a laminating apparatus, a mounting table for mounting a thin plate-like first member, a holding plate for holding a thin plate-like second member arranged opposite to the upper portion of the mounting table, and the holding plate A bonding apparatus having a vacuum chamber ring provided on the outer periphery has been proposed. In this bonding apparatus, first, the holding plate and the vacuum chamber ring are lowered to the mounting table side, the vacuum chamber ring and the table are brought into contact with each other through the seal ring, and then the holding plate, the vacuum chamber ring and the mounting plate are mounted. A vacuum chamber is formed with the mounting table, the atmosphere gas in the vacuum chamber is sucked from the opening formed on the side surface of the vacuum chamber ring, the vacuum chamber is made into a vacuum atmosphere, and then the holding plate is mounted on the mounting table By further lowering to the side, the thin plate-like first member and the second member are bonded together (for example, see Patent Document 1).
　ところで、このような貼り合わせ装置を用いて薄板状の第１部材と第２部材とを貼り合わせる際、両部材の貼り合わせ面に空気が閉じ込められてボイドが発生するという問題があり、第１部材と第２部材とを貼り合わせた貼り合わせ体の品質又は歩留まりを低下させる要因となっている。従って、このような問題を解消させるために、載置テーブルに対向配置された保持板を可撓性材料で構成し、第１部材と第２部材との間に存在する気体（空気）を逃がしつつ両者を貼り合わせる貼り合わせ装置が開発されている（例えば、特許文献２参照）。 By the way, when laminating the thin plate-like first member and the second member using such a laminating apparatus, there is a problem in that air is trapped in the laminating surfaces of both members and voids are generated. This is a factor of reducing the quality or yield of the bonded body obtained by bonding the member and the second member. Therefore, in order to solve such a problem, the holding plate opposed to the mounting table is made of a flexible material, and the gas (air) existing between the first member and the second member is released. However, a laminating apparatus for laminating both has been developed (see, for example, Patent Document 2).
国際公開ＷＯ２００４／０２６５３１International Publication WO2004 / 026531 国際公開ＷＯ２０１０／０５５７３０International Publication WO2010 / 055730
　しかしながら、上記貼り合わせ装置は第１部材と第２部材とを貼り合わせた貼り合わせ体におけるボイドの発生を抑制できるものの、貼り合わせ時における貼り合わせ体の外周部に対する圧縮応力が中央部に対する圧縮応力よりも大きくなって貼り合わせ体外周部の肉厚が中央部の肉厚に比べて薄くなる傾向が有り、また、貼り合わせ時における貼り合わせ体の全外周部に対する圧縮応力にばらつきが生じ易く、貼り合わせ体の外周部の厚さが均一になり難いという問題がある。 However, although the bonding apparatus can suppress the generation of voids in the bonded body in which the first member and the second member are bonded, the compressive stress on the outer peripheral portion of the bonded body at the time of bonding is the compressive stress on the central portion. There is a tendency that the thickness of the outer peripheral portion of the bonded body becomes larger than the thickness of the central portion, and the compressive stress on the entire outer peripheral portion of the bonded body at the time of bonding tends to vary, There exists a problem that the thickness of the outer peripheral part of a bonding body becomes difficult to become uniform.
　本発明の課題は、第１部材と第２部材を貼り合わせた貼り合わせ体における中央部と外周部との厚さにばらつきがなく、且つ外周部の厚さが全周に亘って均一である貼り合わせ体を得ることができる貼り合わせ装置及び貼り合わせ方法を提供することにある。 The problem of the present invention is that there is no variation in the thickness between the central portion and the outer peripheral portion of the bonded body obtained by bonding the first member and the second member, and the thickness of the outer peripheral portion is uniform over the entire circumference. It is providing the bonding apparatus and the bonding method which can obtain a bonding body.
　上記課題を解決するために、本発明の第１の態様によれば、板状の第１部材と第２部材を貼り合わせる貼り合わせ装置であって、前記第１部材を上面に載置して保持する第１の保持部と、該第１の保持部の上部に対向配置され前記第２部材を保持する第２の保持部と、前記第１の保持部と前記第２の保持部との間に形成される空間を減圧する吸気機構と、を有し、前記第２の保持部は、剛性を有するエッジ部と、該エッジ部とは分割され当該エッジ部に外周部が支持された保持部本体とを有し、該保持部本体は、所定の圧力で当該保持部本体の一部が撓む弾性体からなることを特徴とする貼り合わせ装置が提供される。 In order to solve the above problems, according to a first aspect of the present invention, there is provided a bonding apparatus for bonding a plate-like first member and a second member, wherein the first member is placed on an upper surface. A first holding unit for holding, a second holding unit that is arranged to be opposed to the upper part of the first holding unit and holds the second member, and the first holding unit and the second holding unit. An air intake mechanism that depressurizes a space formed between the second holding portion and a rigid edge portion, and the edge portion is divided and the outer peripheral portion is supported by the edge portion. There is provided a bonding apparatus characterized in that the holding unit main body is made of an elastic body in which a part of the holding unit main body is bent by a predetermined pressure.
　本発明の第１の態様において、前記エッジ部は、周方向に沿って等間隔に設けられた４個~８個の釣支部材によって前記第２の保持部の上方に設けられた支持板に釣支されていることが好ましい。 In the first aspect of the present invention, the edge portion is formed on a support plate provided above the second holding portion by four to eight fishing support members provided at equal intervals along the circumferential direction. It is preferable that it is supported.
　本発明の第１の態様において、前記釣支部材は、６個であることが好ましい。 In the first aspect of the present invention, the number of the fishing support members is preferably six.
　本発明の第１の態様において、前記第１の保持部と前記第２の保持部との間に形成される空間の気密性を保持するための気密性保持機構を有し、該気密性保持機構は、前記第２の保持部の下面外周部に沿って設けられた環状のシール材であって、前記第１の保持部、前記第２の保持部及び当該シール材とで囲まれた空間の気密性を保持するシール材と、該シール材の外側に設けられ、前記第２の保持部の下面に当接して前記第１の保持部材によって保持された第１部材と前記第２の保持部材によって保持された第２部材との間の間隔を調整する高さ調整機構と、を有することが好ましい。 1st aspect of this invention WHEREIN: It has an airtight holding mechanism for hold | maintaining the airtightness of the space formed between the said 1st holding | maintenance part and the said 2nd holding | maintenance part, and this airtight holding | maintenance The mechanism is an annular sealing material provided along the outer peripheral portion of the lower surface of the second holding portion, and is a space surrounded by the first holding portion, the second holding portion, and the sealing material. A sealing member that retains hermeticity, and a first member that is provided on the outer side of the sealing member and that is held by the first holding member in contact with the lower surface of the second holding portion and the second holding member It is preferable to have a height adjusting mechanism that adjusts the distance between the second member held by the member.
　本発明の第１の態様において、前記高さ調節機構は、前記第１の保持部、前記第２の保持部及び前記シール材とで囲まれた空間の気密性を保持しつつ、前記第１部材と前記第２部材との間の間隔を調整することが好ましい。 In the first aspect of the present invention, the height adjusting mechanism may maintain the airtightness of the space surrounded by the first holding portion, the second holding portion, and the sealing material, and It is preferable to adjust the distance between the member and the second member.
　本発明の第１の態様において、前記第２の保持部の上部に設けられ、前記第２の保持部を下方に押圧する加圧機構を備えていることが好ましい。 In the first aspect of the present invention, it is preferable to include a pressurizing mechanism that is provided on an upper portion of the second holding portion and presses the second holding portion downward.
　本発明の第１の態様において、前記加圧機構は、前記第２の保持部の前記保持部本体の上面を覆うように設けられた鉛直方向に伸縮自在の圧力容器を有し、該圧力容器内に流体を導入することによって前記第２の保持部を加圧することが好ましい。 1st aspect of this invention WHEREIN: The said pressurization mechanism has a pressure vessel which can be extended-contracted in the perpendicular direction provided so that the upper surface of the said holding | maintenance part main body of the said 2nd holding | maintenance part might be covered, and this pressure vessel It is preferable to pressurize the second holding part by introducing a fluid therein.
　上記課題を解決するために、本発明の第２の態様によれば、貼り合わせ装置を用いて、板状の第１部材と第２部材を貼り合わせる貼り合わせ方法であって、前記貼り合わせ装置は、前記第１部材を上面に載置して保持する第１の保持部と、該第１の保持部の上部に対向配置され前記第２部材を保持する第２の保持部と、前記第１の保持部と前記第２の保持部との間に形成される空間を減圧する吸気機構と、を有し、前記第２の保持部は、剛性を有するエッジ部と、該エッジ部とは分割され当該エッジ部に外周部が支持された保持部本体とを有し、該保持部本体は、所定の圧力で当該保持部本体の一部が撓む弾性体からなり、前記貼り合わせ方法は、前記第１の保持部に保持された第１部材と前記第２の保持部に保持された第２部材との間の間隔が所定の間隔になるように設定する工程と、前記第１保持部と前記第２の保持部との間に形成される空間を減圧して前記第２の保持部における前記保持部本体の一部を撓ませ、当該第２の保持部に保持された前記第２部材の撓んだ一部を前記第１部材に当接させる工程と、前記第１の保持部と前記第２の保持部との間に形成される空間をさらに減圧して前記第２部材の全面を前記第１部材の全面に貼り合わせる工程と、を有することを特徴とする貼り合わせ方法が提供される。 In order to solve the above-described problem, according to a second aspect of the present invention, there is provided a laminating method for laminating a plate-like first member and a second member using a laminating apparatus, the laminating apparatus. Includes a first holding portion that holds the first member placed on the upper surface, a second holding portion that is disposed opposite to the upper portion of the first holding portion and holds the second member, and the first An intake mechanism that depressurizes a space formed between the first holding portion and the second holding portion, and the second holding portion includes a rigid edge portion and the edge portion. A holding portion main body that is divided and has an outer peripheral portion supported by the edge portion, and the holding portion main body is made of an elastic body in which a part of the holding portion main body is bent by a predetermined pressure. , Between the first member held by the first holding portion and the second member held by the second holding portion A step of setting the gap to be a predetermined gap, and the space formed between the first holding part and the second holding part by depressurizing the holding part main body of the second holding part. A step of bending a portion of the second member held by the second holding portion against the first member; and the first holding portion and the second holding portion. And a step of further depressurizing a space formed between the first member and the second member to bond the entire surface of the second member to the entire surface of the first member.
　本発明の第２の態様において、前記所定の間隔は、前記当接させる工程において、前記保持部本体の一部が撓んだ際、該保持部本体に保持された前記第２部材の一部が前記第１の保持部が保持する第１部材に当接する間隔であることが好ましい。 In the second aspect of the present invention, the predetermined interval is a part of the second member held by the holding part body when the holding part body is bent in the contacting step. Is an interval that contacts the first member held by the first holding portion.
　本発明によれば、第１部材と第２部材とを貼り合わせた貼り合わせ体における中央部と外周部の厚さにばらつきがなく、且つ外周部の厚さが全周に亘って均一である貼り合わせ体を得ることができる。 According to the present invention, there is no variation in the thickness of the central portion and the outer peripheral portion of the bonded body obtained by bonding the first member and the second member, and the thickness of the outer peripheral portion is uniform over the entire circumference. A bonded body can be obtained.
本発明が適用される貼り合わせ装置の要部の概略構成を示す縦断面図である。It is a longitudinal cross-sectional view which shows schematic structure of the principal part of the bonding apparatus with which this invention is applied. 本発明の実施の形態に係る貼り合わせ装置の概略構成を示す縦断面図である。It is a longitudinal cross-sectional view which shows schematic structure of the bonding apparatus which concerns on embodiment of this invention. 図２の貼り合わせ装置における高さ調節機構の概略構成を示す側面図である。It is a side view which shows schematic structure of the height adjustment mechanism in the bonding apparatus of FIG. 図３の高さ調節機構における偏心ロールと回転シャフトとの関係を示す図である。It is a figure which shows the relationship between the eccentric roll and rotation shaft in the height adjustment mechanism of FIG. 図２の貼り合わせ装置における上部チャックのエッジ部を示す平面図である。It is a top view which shows the edge part of the upper chuck | zipper in the bonding apparatus of FIG. 本発明の実施の形態に係る貼り合わせ方法の工程の一部を示す図である。It is a figure which shows a part of process of the bonding method which concerns on embodiment of this invention. 本発明の実施の形態に係る貼り合わせ方法の工程の一部を示す図である。It is a figure which shows a part of process of the bonding method which concerns on embodiment of this invention. 本発明の実施の形態に係る貼り合わせ方法の工程の一部を示す図である。It is a figure which shows a part of process of the bonding method which concerns on embodiment of this invention. 本発明の実施の形態に係る貼り合わせ方法の工程の一部を示す図である。It is a figure which shows a part of process of the bonding method which concerns on embodiment of this invention. 本発明の実施の形態に係る貼り合わせ方法の工程の一部を示す図である。It is a figure which shows a part of process of the bonding method which concerns on embodiment of this invention. 本発明の実施の形態に係る貼り合わせ方法の工程の一部を示す図である。It is a figure which shows a part of process of the bonding method which concerns on embodiment of this invention.
　以下、本発明の実施の形態について図面を参照しながら詳細に説明する。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
　図１は、本発明が適用される貼り合わせ装置の要部の概略構成を示す縦断面図である。 FIG. 1 is a longitudinal sectional view showing a schematic configuration of a main part of a bonding apparatus to which the present invention is applied.
　図１において、この貼り合わせ装置１００は、第１部材としての薄板状のウエハＷ１を上面で載置して保持する第１の保持部としての下部チャック１１０と、第２部材としての薄板状のウエハＷ２を下面で吸着保持する第２の保持部としての上部チャック１１１とを備えている。上部チャック１１１は、下部チャック１１０の上方に、該下部チャック１１０と対向するように配置され、上部チャック１１１の上部には、該上部チャック１１１を下部チャック１１０に押圧する加圧機構としての圧力容器１２０が設けられている。 In FIG. 1, a laminating apparatus 100 includes a lower chuck 110 as a first holding unit for mounting and holding a thin wafer W1 as a first member on the upper surface, and a thin plate as a second member. And an upper chuck 111 as a second holding part for holding the wafer W2 by suction on its lower surface. The upper chuck 111 is disposed above the lower chuck 110 so as to face the lower chuck 110, and a pressure vessel as a pressurizing mechanism that presses the upper chuck 111 against the lower chuck 110 is disposed above the upper chuck 111. 120 is provided.
　このような構成の貼り合わせ装置１００において、ウエハＷ１とウエハＷ２との貼り合わせは、以下のように行われる。 In the bonding apparatus 100 having such a configuration, the wafer W1 and the wafer W2 are bonded as follows.
　すなわち、先ず、下部チャック１１０の上面にウエハＷ１を載置して保持すると共に、上部チャック１１１にウエハＷ２を、例えば、図示省略した吸着機構によって吸着保持する。 That is, first, the wafer W1 is placed and held on the upper surface of the lower chuck 110, and the wafer W2 is sucked and held on the upper chuck 111 by, for example, a suction mechanism (not shown).
　次に、下部チャック１１０、上部チャック１１１及び該上部チャック１１１の下面外周部に設けられた環状のシール材（図示省略）で囲まれた空間Ｓを所定圧力まで減圧し、上部チャック１１１及び該上部チャック１１１に保持されたウエハＷ２の中心部を撓ませ、これによって、ウエハＷ２の中心部をウエハＷ１の中心部に当接させる。その後、空間Ｓ内の圧力を、ウエハＷ２を吸着保持する上部チャック１１１の吸着圧力よりも低くなるように減圧してウエハＷ２を上部チャック１１１から離脱させ、次いで、圧力容器１２０に、例えば圧縮空気を導入して該圧力容器１２０を図１中下方向に向かって伸長させ、これによって、ウエハＷ２を下部チャック１１０に載置されたウエハＷ１に向かって押圧してウエハＷ２の全面をウエハＷ１の全面に貼り合わせる。 Next, the space S surrounded by the lower chuck 110, the upper chuck 111, and an annular sealing material (not shown) provided on the outer periphery of the lower surface of the upper chuck 111 is reduced to a predetermined pressure, and the upper chuck 111 and the upper chuck The central portion of the wafer W2 held by the chuck 111 is bent, and thereby the central portion of the wafer W2 is brought into contact with the central portion of the wafer W1. Thereafter, the pressure in the space S is reduced so as to be lower than the suction pressure of the upper chuck 111 holding the wafer W2, and the wafer W2 is detached from the upper chuck 111. 1, the pressure vessel 120 is extended downward in FIG. 1, thereby pressing the wafer W2 toward the wafer W1 placed on the lower chuck 110 so that the entire surface of the wafer W2 is covered with the wafer W1. Affix to the entire surface.
　このようにして得られた貼り合わせ体には、ウエハＷ１としての品質を確保するために、ミクロンオーダー、例えば１~３μｍレベルでの膜厚均一性が求められる。 The bonded body thus obtained is required to have a film thickness uniformity on the micron order, for example, 1 to 3 μm level in order to ensure the quality as the wafer W1.
　しかしながら、本発明者の調査によれば、図１の貼り合わせ装置を用いてウエハＷ１とウエハＷ２を貼り合わせる際、貼り合わせ体の外周部に作用する押圧力が、中央部に作用する押圧力よりも大きくなる傾向があり、これによって、貼り合わせ体における外周部の厚さが中央部の厚さよりも薄くなるという問題がある。 However, according to the investigation by the present inventor, when the wafer W1 and the wafer W2 are bonded using the bonding apparatus of FIG. 1, the pressing force acting on the outer peripheral portion of the bonded body is the pressing force acting on the central portion. There exists a problem that the thickness of the outer peripheral part in a bonding body becomes thinner than the thickness of a center part by this.
　そこで、本発明者は、貼り合わせ装置における下部チャック及び上部チャックの剛性と貼り合わせ体の中央部及び外周部に作用する押圧力に起因する圧縮応力との関係について検討した結果、第２の保持部には、貼り合わせ体におけるボイドの発生を抑制するために、所定圧力でその一部が撓む可撓性が要求される一方、貼り合わせ体における外周部及び中央部に作用する圧縮応力を均一にするために、外周部の剛性を中央部の剛性よりも大きくする必要があることを見出し、本発明を完成させた。 Therefore, the present inventor has examined the relationship between the rigidity of the lower chuck and the upper chuck in the bonding apparatus and the compressive stress caused by the pressing force acting on the central portion and the outer peripheral portion of the bonded body. In order to suppress the generation of voids in the bonded body, the part is required to be flexible so that a part thereof is bent at a predetermined pressure, while compressive stress acting on the outer peripheral part and the central part of the bonded body is applied. In order to make it uniform, it has been found that the rigidity of the outer peripheral part needs to be larger than the rigidity of the central part, and the present invention has been completed.
　すなわち、本発明の貼り合わせ装置における第２の保持部は、剛性を有するエッジ部と、該エッジ部とは分割され、該エッジ部に外周部が支持された保持部本体とを有し、保持部本体は、所定の圧力で当該保持部本体の一部が撓む弾性体からなる。 That is, the second holding portion in the bonding apparatus of the present invention has a rigid edge portion and a holding portion main body that is divided from the edge portion and has an outer peripheral portion supported by the edge portion. The part body is made of an elastic body in which a part of the holding part body is bent by a predetermined pressure.
　図２は、本発明の実施の形態に係る貼り合わせ装置の概略構成を示す縦断面図である。 FIG. 2 is a longitudinal sectional view showing a schematic configuration of the bonding apparatus according to the embodiment of the present invention.
　図２において、貼り合わせ装置５０は、第１部材であるウエハＷ１を上面で保持する第１の保持部材としての下部チャック１０と、第２部材であるウエハＷ２を下面で保持する第２の保持部としての上部チャック１１を備えており、上部チャック１１は、下部チャック１０の上方に該下部チャック１０と対向するように配置されている。下部チャック１０はフレーム状の筺体１２上に固定されており、筺体１２は天板１２ａ、底板１２ｂ及びその間に配置された側板１２ｃとから主として構成されている。 In FIG. 2, a bonding apparatus 50 includes a lower chuck 10 as a first holding member that holds a wafer W1 that is a first member on the upper surface, and a second holding that holds a wafer W2 that is a second member on the lower surface. The upper chuck 11 is provided as a part, and the upper chuck 11 is disposed above the lower chuck 10 so as to face the lower chuck 10. The lower chuck 10 is fixed on a frame-like housing 12, and the housing 12 is mainly composed of a top plate 12a, a bottom plate 12b, and a side plate 12c disposed therebetween.
　下部チャック１０の内部には、ウエハＷ１を吸着保持するための吸引管１３が設けられている。吸引管１３は、図示省略した、例えば真空ポンプに接続されている。下部チャック１０は、ウエハＷ１及びウエハＷ２を貼り合わせる際の荷重によっても変形しない強度を有する材料、例えば、炭化ケイ素セラミック、窒化アルミセラミックなどのセラミックで構成されている。なお、下部チャック１０の構成材料としてアルミニウムを適用することもできる。この場合、下部チャック１０の変形量を少なくするために、その厚さを、例えば５０ｍｍ又はそれ以上にすることが好ましい。 Inside the lower chuck 10 is provided a suction tube 13 for sucking and holding the wafer W1. The suction tube 13 is connected to a vacuum pump (not shown), for example. The lower chuck 10 is made of a material having a strength that does not deform even when a load is applied to the wafer W1 and the wafer W2, for example, a ceramic such as silicon carbide ceramic or aluminum nitride ceramic. Note that aluminum can also be applied as a constituent material of the lower chuck 10. In this case, in order to reduce the deformation amount of the lower chuck 10, it is preferable that the thickness is, for example, 50 mm or more.
　下部チャック１０の側面には、上部チャック１１の下面に当接、支持して上部チャック１１の高さを調整することにより、貼り合わせ空間ＳにおけるウエハＷ１とウエハＷ２との間の間隔を調整する高さ調整機構３０が設けられている。ここで、貼り合わせ空間Ｓとは、下部チャック１０、上部チャック１１、及び上部チャック１１の外周下面に設けられたＯリング１４に囲まれた空間をいう（後述する図６Ｂ参照）。高さ調整機構３０は、上部チャック１１の下面と当接する際に、該上部チャック１１の下面に設けられたＯリング１４の外側に位置するように配置されている。高さ調整機構３０は、例えば、円形の上部平面を有する下部チャック１０の外周に沿って等間隔に、例えば３個配置されている。 The distance between the wafer W1 and the wafer W2 in the bonding space S is adjusted by adjusting the height of the upper chuck 11 by contacting and supporting the side surface of the lower chuck 10 against the lower surface of the upper chuck 11. A height adjusting mechanism 30 is provided. Here, the bonding space S refers to a space surrounded by the lower chuck 10, the upper chuck 11, and an O-ring 14 provided on the outer peripheral lower surface of the upper chuck 11 (see FIG. 6B described later). The height adjusting mechanism 30 is disposed so as to be positioned outside the O-ring 14 provided on the lower surface of the upper chuck 11 when contacting the lower surface of the upper chuck 11. For example, three height adjusting mechanisms 30 are arranged at equal intervals along the outer periphery of the lower chuck 10 having a circular upper plane, for example.
　図３は、図２の貼り合わせ装置における高さ調整機構３０の概略構成を示す側面図である。 FIG. 3 is a side view showing a schematic configuration of the height adjusting mechanism 30 in the bonding apparatus of FIG.
　図３において、高さ調整機構３０は、支持台３１と、該支持台３１に平行に支持された回転シャフト３４と、該回転シャフト３４に固定され該回転シャフト３４の回動に伴って回転する偏心ロール３２とから主として構成されている。偏心ロール３２の中心Ｃ１は、図４に示すように回転シャフト３４の中心Ｃ２から所定寸法だけ偏心している。従って、高さ調整機構３０は、回転シャフト３４の回転によって偏心ロール３２の鉛直方向の頂点の高さが変化し、これによって下部チャック１０に対する上部チャック１１の高さを調整することができる。偏心ロール３２の中心Ｃ１と回転シャフト３４の中心Ｃ２との偏心量は、例えば、０．１~２．０ｍｍである。高さ調整機構３０は、後述する気密保持機構によって貼り合わせ空間Ｓの気密性が保持され状態で、ウエハＷ１とウエハＷ２との間隔を調整する。 In FIG. 3, the height adjusting mechanism 30 includes a support base 31, a rotary shaft 34 supported in parallel to the support base 31, and is fixed to the rotary shaft 34 and rotates as the rotary shaft 34 rotates. It is mainly composed of the eccentric roll 32. The center C1 of the eccentric roll 32 is eccentric by a predetermined dimension from the center C2 of the rotating shaft 34 as shown in FIG. Accordingly, the height adjustment mechanism 30 can adjust the height of the upper chuck 11 with respect to the lower chuck 10 by changing the height of the vertical apex of the eccentric roll 32 by the rotation of the rotary shaft 34. The amount of eccentricity between the center C1 of the eccentric roll 32 and the center C2 of the rotary shaft 34 is, for example, 0.1 to 2.0 mm. The height adjusting mechanism 30 adjusts the interval between the wafer W1 and the wafer W2 in a state where the airtightness of the bonding space S is maintained by an airtight holding mechanism described later.
　図２に戻って、上部チャック１１は、ウエハＷ２を保持する保持部本体１１ａと、該保持部本体１１ａの外周部を支持するエッジ部１１ｂとから主として構成されている。保持部材本体１１ａは、可撓性を備えた材料、例えばジュラルミンで構成されている。板状のジュラルミンは、所定圧力をかけることによってその一部、例えば中央部を撓ませることができる。これによって、後述するように、ウエハＷ１をウエハＷ２に貼り合わせる際の貼り合わせ空間Ｓ内を減圧する工程において、ボイドの発生を防止することができる。一方、保持部材本体１１ａの外周部を支持するエッジ部１１ｂは、高剛性材料、例えばステンレス鋼（ＳＵＳ）材で構成されている。 Referring back to FIG. 2, the upper chuck 11 is mainly composed of a holding portion main body 11a for holding the wafer W2 and an edge portion 11b for supporting the outer peripheral portion of the holding portion main body 11a. The holding member body 11a is made of a flexible material, for example, duralumin. A part of the plate-like duralumin can be bent by applying a predetermined pressure, for example, the central part. As a result, as will be described later, voids can be prevented from being generated in the step of reducing the pressure in the bonding space S when the wafer W1 is bonded to the wafer W2. On the other hand, the edge part 11b which supports the outer peripheral part of the holding member main body 11a is comprised by highly rigid material, for example, stainless steel (SUS) material.
　可撓性の保持部本体１１ａと、高剛性のエッジ部１１ｂとで上部チャック１１を構成することにより、上部チャック１１の、特に外周部の剛性を確保しつつ、中央部における可撓性を維持することができ、これによって、例えば、円形板状体である貼り合わせ体を調製する際、貼り合わせ体の外周部に対する圧縮応力と中心部に対する圧縮応力をバランスさせることができる。また、可撓性の保持部本体１１ａの全外周部を高剛性のエッジ部１１ｂで均等に支持することができるので、貼り合わせ体に対する外周部の周方向に沿った圧縮応力をバランスさせることができる。従って、貼り合わせ体の外周部における周方向に沿った圧縮応力をバランスさせる作用と、上述の外周部の圧縮応力と中心部の圧縮応力をバランスさせる作用とが協働し、これによって、円形薄板状の貼り合わせ体に作用する全圧縮応力がバランスし、貼り合わせ体の全方向における厚さの均一性を確保することができる。 By configuring the upper chuck 11 with the flexible holding portion main body 11a and the highly rigid edge portion 11b, the rigidity of the upper chuck 11, particularly the outer peripheral portion, is secured, and the flexibility in the central portion is maintained. Thus, for example, when preparing a bonded body that is a circular plate-like body, the compressive stress on the outer peripheral portion of the bonded body and the compressive stress on the central portion can be balanced. In addition, since the entire outer peripheral portion of the flexible holding portion main body 11a can be uniformly supported by the highly rigid edge portion 11b, the compressive stress along the circumferential direction of the outer peripheral portion with respect to the bonded body can be balanced. it can. Therefore, the action of balancing the compressive stress along the circumferential direction in the outer peripheral part of the bonded body cooperates with the action of balancing the compressive stress of the outer peripheral part and the compressive stress of the central part. The total compressive stress acting on the shaped bonded body is balanced, and the thickness uniformity in all directions of the bonded body can be ensured.
　図５は、図２の貼り合わせ装置における上部チャック１１のエッジ部１１ｂを示す平面図である。 FIG. 5 is a plan view showing the edge portion 11b of the upper chuck 11 in the bonding apparatus of FIG.
　図５において、上部チャック１１のエッジ部１１ｂは円環状を呈しており、外周部を形成する厚板部１１ｂ１と、内周部を形成する薄板部１１ｂ２とからなる段差構造を有している。ウエハＷ２を保持する保持部本体１１ａ（図２参照）は厚板部１１ｂ１と薄板部１１ｂ２との段差部に嵌合され、薄板部１１ｂ２によって支持される。厚板部１１ｂ１及び薄板部１１ｂ２における周方向の厚さは均一である。 5, the edge portion 11b of the upper chuck 11 has an annular shape, and has a step structure including a thick plate portion 11b1 that forms the outer peripheral portion and a thin plate portion 11b2 that forms the inner peripheral portion. A holding body 11a (see FIG. 2) that holds the wafer W2 is fitted into a step portion between the thick plate portion 11b1 and the thin plate portion 11b2, and is supported by the thin plate portion 11b2. The thickness in the circumferential direction of the thick plate portion 11b1 and the thin plate portion 11b2 is uniform.
　エッジ部１１ｂは、厚板部１１ｂ１の周方向に沿って均等に配置された、例えば、６個の釣支部材１５によってその上部に配置された支持板１６（図２参照）に釣支されている。従って、保持部本体１１ａは、エッジ部１１ｂの薄板部１１ｂ２によってその外周部が一様に支持されている。 The edge portion 11b is supported by a support plate 16 (see FIG. 2) disposed on the upper portion thereof by, for example, six fishing support members 15 that are arranged uniformly along the circumferential direction of the thick plate portion 11b1. Yes. Therefore, the outer peripheral part of the holding part main body 11a is uniformly supported by the thin plate part 11b2 of the edge part 11b.
　図２に戻って、釣支部材１５は、例えば、ばね部材１５ａによって鉛直方向に伸縮自在に構成されている。エッジ部１１ｂの下面には、該エッジ部１１ｂの環状の周方向に沿って環状のシール部材としてのＯリング１４が配置されている。Ｏリング１４は、貼り合わせ空間Ｓの気密性を保持する。Ｏリング１４は弾性を有しており、その材質としては、例えば、耐熱性のパーフロロエラストマーが好適に使用される。なお、Ｏリング１４に要求される耐熱温度が、例えば１５０℃程度であれば、構成材料としてフッ素ゴムを使用することもできる。Ｏリング１４と高さ調整機構３０で貼り合わせ空間Ｓの気密性を保持する気密性保持機構が構成されている。 Referring back to FIG. 2, the fishing support member 15 is configured to be extendable in the vertical direction by, for example, a spring member 15a. An O-ring 14 as an annular seal member is disposed on the lower surface of the edge portion 11b along the annular circumferential direction of the edge portion 11b. The O-ring 14 maintains the airtightness of the bonding space S. The O-ring 14 has elasticity, and for example, a heat-resistant perfluoroelastomer is preferably used as the material. In addition, if the heat-resistant temperature requested | required of the O-ring 14 is about 150 degreeC, for example, fluororubber can also be used as a constituent material. The O-ring 14 and the height adjusting mechanism 30 constitute an airtight holding mechanism that holds the airtightness of the bonding space S.
　上部チャック１１の保持部本体１１ａは、該保持部本体１１ａ全体に所定の圧力、例えば０．７気圧（＝０．０７ＭＰａ）がかかると、その一部、例えば中心部が撓むように構成されている。保持部本体１１ａの中心部を撓ませるため、例えば、有限要素法を用いた解析により保持部本体１１ａの厚さが決定される。ウエハＷ２の径を、例えば、３００ｍｍとし、エッジ部１１ｂの下面外周部に沿って設けられたシール材１４の径を３０６ｍｍとして解析（シミュレーション）したところ、保持部本体１１ａの厚みが１６ｍｍ程度であれば、実用上、貼り合わせ装置の保持部本体１１ａに適用できる程度にその中心部が撓むことが分かった。 The holding part main body 11a of the upper chuck 11 is configured such that, when a predetermined pressure, for example, 0.7 atmospheric pressure (= 0.07 MPa) is applied to the whole holding part main body 11a, a part thereof, for example, the central part is bent. . In order to bend the central part of the holding part main body 11a, for example, the thickness of the holding part main body 11a is determined by analysis using a finite element method. For example, when the diameter of the wafer W2 is set to 300 mm and the diameter of the sealing material 14 provided along the outer periphery of the lower surface of the edge portion 11b is set to 306 mm (simulation), the thickness of the holding portion main body 11a is about 16 mm. For example, it has been found that the central portion of the bonding apparatus can be practically bent to such an extent that it can be applied to the holding body 11a.
　また、保持部本体１１ａの中心部が撓む際には、上部チャック１１に保持されたウエハＷ２の中心部がその下方に配置されたウエハＷ１に接触する必要がある。このため保持部本体１１ａは、その中心部が、貼り合わせ空間ＳにおけるウエハＷ２とウエハＷ１との間の間隔以上の所定の寸法だけ撓むように構成されている（後述する図６Ｃ参照）。 Further, when the central portion of the holding portion main body 11a bends, the central portion of the wafer W2 held by the upper chuck 11 needs to come into contact with the wafer W1 disposed therebelow. For this reason, the holding portion main body 11a is configured such that the central portion thereof is bent by a predetermined dimension that is equal to or larger than the interval between the wafer W2 and the wafer W1 in the bonding space S (see FIG. 6C described later).
　ここで、例えば、ウエハＷ２とウエハＷ１を貼り合わせた際の合計の厚みが１．２ｍｍであり、上部チャック１１のエッジ部１１ｂにおける保持部本体１１ａを支持する薄板部１１ｂ２の厚さを０．９ｍｍ、貼り合わせ空間Ｓにおけるエッジ部１１ｂの薄板部１１ｂ２と下部チャック１０との間の間隔を０．５ｍｍに設定した場合、ウエハＷ２とウエハＷ１との間の間隔は０．２ｍｍとなる。この点、上述の解析結果によると、上部チャック１１の保持部本体１１ａの厚みが１６ｍｍであれば、その中心部の撓み量は０．２ｍｍとなり、ウエハＷ２の中心部がウエハＷ１に接触するように保持部本体１１ａの一部である中心部が撓むことが分かった。従って、ウエハＷ１とウエハＷ２とを貼り合わせる際のウエハＷ１とウエハＷ２との間隔を所定の間隔に設定する場合における所定の間隔とは、上部チャック１１の保持部本体１１ａの撓みに伴って、該保持部本体１１ａに保持されたウエハＷ２の中心部が撓んだ際に、当該ウエハＷ２の中心部がウエハＷ１に接触する間隔であって、例えば０．２ｍｍ又はそれ以下の間隔をいう。 Here, for example, the total thickness when the wafer W2 and the wafer W1 are bonded to each other is 1.2 mm, and the thickness of the thin plate portion 11b2 supporting the holding portion main body 11a in the edge portion 11b of the upper chuck 11 is set to 0. When the interval between the thin plate portion 11b2 of the edge portion 11b and the lower chuck 10 in the bonding space S is set to 0.5 mm, the interval between the wafer W2 and the wafer W1 is 0.2 mm. According to the above analysis result, if the thickness of the holding part main body 11a of the upper chuck 11 is 16 mm, the deflection amount of the central part is 0.2 mm, and the central part of the wafer W2 is in contact with the wafer W1. It was found that the central part which is a part of the holding part main body 11a bends. Therefore, the predetermined interval in the case where the interval between the wafer W1 and the wafer W2 when the wafer W1 and the wafer W2 are bonded to each other is set to a predetermined interval, as the holding portion main body 11a of the upper chuck 11 is bent. When the central portion of the wafer W2 held by the holding portion main body 11a is bent, the interval at which the central portion of the wafer W2 contacts the wafer W1, for example, an interval of 0.2 mm or less.
　上部チャック１１の保持部本体１１ａの内部には、ウエハＷ２を吸着保持するための吸引管１７が設けられている。吸引管１７は、図示省略した、例えば真空ポンプなどの減圧装置に接続されている。また、保持部本体１１ａの内部には、貼り合わせ空間Ｓを減圧するための吸気管１８が設けられている。吸気管１８の一端は、保持部本体１１ａの下面におけるウエハＷ２が保持されない場所において貼り合わせ空間Ｓに開口している。吸気管１８の他端は、図示省略した、例えば真空ポンプなどの減圧装置に接続されている。吸気管１８と該吸気管１８に接続された減圧装置とで吸気機構が構成されている。 A suction tube 17 for sucking and holding the wafer W2 is provided inside the holding body 11a of the upper chuck 11. The suction pipe 17 is connected to a decompression device such as a vacuum pump (not shown). In addition, an intake pipe 18 for decompressing the bonding space S is provided inside the holding portion main body 11a. One end of the intake pipe 18 opens into the bonding space S at a place where the wafer W2 is not held on the lower surface of the holding portion main body 11a. The other end of the intake pipe 18 is connected to a decompression device such as a vacuum pump (not shown). The intake pipe 18 and the pressure reducing device connected to the intake pipe 18 constitute an intake mechanism.
　上部チャック１１の上部、すなわち、上部チャック１１の上面と該上部チャック１１を支持する支持板１６の下面との間に上部チャック１１を鉛直方向下方に押圧する加圧機構２０が設けられている。加圧機構２０は伸縮自在の圧力容器２１と、該圧力容器２１の内部に、例えば圧縮空気を供給する流体供給管２２とから主として構成されている。圧力容器２１は、例えばステンレス製のベローズにより構成されており、その下面の面積は、例えば上部チャック１１の保持部本体１１ａの上部面積と略等しくなるように構成されている。従って、流体供給管２２から圧力容器２１に流体、例えば圧縮吸気を供給すると、圧力容器２１が下方に向かって伸長し、保持部本体１１ａの上部平面を均等に下方に向かって押圧する。 A pressure mechanism 20 that presses the upper chuck 11 downward in the vertical direction is provided between the upper part of the upper chuck 11, that is, between the upper surface of the upper chuck 11 and the lower surface of the support plate 16 that supports the upper chuck 11. The pressurizing mechanism 20 is mainly composed of an expandable / contractible pressure vessel 21 and a fluid supply pipe 22 for supplying, for example, compressed air into the pressure vessel 21. The pressure vessel 21 is configured by, for example, a stainless steel bellows, and the area of the lower surface thereof is configured to be substantially equal to the upper area of the holding body 11a of the upper chuck 11, for example. Accordingly, when a fluid, for example, compressed intake air is supplied from the fluid supply pipe 22 to the pressure vessel 21, the pressure vessel 21 extends downward and presses the upper plane of the holding portion main body 11a evenly downward.
　上部チャック１１、加圧機構２０及びこれらを支持する支持板１６並びに該支持板１６に一端である上方端が固定され、筺体１２の天板１２ａを貫通して延びる複数の支柱部材４０ａと、該支柱部材４０ａの他端である下方端に固定された底部支持板４０ｂとで上部チャック構造体４０が形成されている。上部チャック構造体４０の底部支持板４０ｂと筺体１２の底板１２ｂとの間には、移動機構として、例えばエアーシリンダ２５が配置されており、該エアーシリンダ２５を作動させることによって、上部チャック構造体４０が上部チャック１１及び加圧機構２０ごと上下動し、下部チャック１０に対する上部チャック１１の相対位置を可変する。従って、エアーシリンダ２５は、ウエハＷ１とウエハＷ２を貼り合わせる際、上部チャック１１を下降させて下部チャック１０に近接させることによって貼り合わせ空間Ｓを形成する（後述する図６Ｂ参照）。 An upper chuck 11, a pressure mechanism 20, a support plate 16 that supports them, and an upper end that is one end of the support plate 16, and a plurality of support members 40 a extending through the top plate 12 a of the housing 12; The upper chuck structure 40 is formed by the bottom support plate 40b fixed to the lower end which is the other end of the support member 40a. For example, an air cylinder 25 is arranged as a moving mechanism between the bottom support plate 40b of the upper chuck structure 40 and the bottom plate 12b of the housing 12. By operating the air cylinder 25, the upper chuck structure is operated. 40 moves up and down together with the upper chuck 11 and the pressurizing mechanism 20 to change the relative position of the upper chuck 11 with respect to the lower chuck 10. Therefore, the air cylinder 25 forms the bonding space S by lowering the upper chuck 11 and bringing it close to the lower chuck 10 when bonding the wafer W1 and the wafer W2 (see FIG. 6B described later).
　なお、上部チャック構造体４０を可動する代わりに、上部チャック１１を固定状態とし、該上部チャック１１に対する下部チャック１０の相対位置を可変する移動機構を設けることもできる。 In addition, instead of moving the upper chuck structure 40, it is possible to provide a moving mechanism for fixing the upper chuck 11 and changing the relative position of the lower chuck 10 with respect to the upper chuck 11.
　このような構成の貼り合わせ装置５０において、ウエハＷ１とウエハＷ２との貼り合わせは、以下のように行われる。 In the bonding apparatus 50 having such a configuration, the bonding of the wafer W1 and the wafer W2 is performed as follows.
　図６Ａ~図６Ｆは、それぞれ本発明の実施の形態に係る貼り合わせ方法の工程の一部を示す図である。 6A to 6F are diagrams each showing a part of the steps of the bonding method according to the embodiment of the present invention.
　図６Ａ~図６Ｆにおいて、先ず、下部チャック１０と上部チャック１１が離れた状態で、下部チャック１０の上面にウエハＷ１を載置して保持すると共に、上部チャック１１の保持部本体１１ａの下面にウエハＷ２を吸着保持してウエハＷ２とウエハＷ１とを対向配置する（図６Ａ）。上部チャック１１の保持部本体１１ａにおけるウエハＷ２の吸着圧力は、例えば、０．１気圧（＝０．０１Ｍｐａ）である。なお、ウエハＷ１とウエハＷ２は、例えば、略同じ径を有する円形薄板状を呈しており、ウエハＷ１の上面又はウエハＷ２の下面には、予め接着剤（図示省略）が塗布されている。 6A to 6F, first, while the lower chuck 10 and the upper chuck 11 are separated from each other, the wafer W1 is placed and held on the upper surface of the lower chuck 10, and the lower chuck 10 is held on the lower surface of the holding body 11a of the upper chuck 11. The wafer W2 is sucked and held, and the wafer W2 and the wafer W1 are arranged to face each other (FIG. 6A). The adsorption pressure of the wafer W2 on the holding unit main body 11a of the upper chuck 11 is, for example, 0.1 atm (= 0.01 Mpa). The wafer W1 and the wafer W2 have, for example, circular thin plate shapes having substantially the same diameter, and an adhesive (not shown) is applied in advance to the upper surface of the wafer W1 or the lower surface of the wafer W2.
　ウエハＷ１とウエハＷ２とを対向するように保持した貼り合わせ装置において、エアーシリンダ２５（図２参照）により、高さ調整機構３０の偏心ロール３２が上部チャック１１のエッジ部１１ｂの下面に当接するまで上部チャック１１を下降させる。この際、偏心ロール３２とエッジ部１１ｂの下面との接触点の高さは、ウエハＷ１とウエハＷ２との間隔が所定間隔、例えば、上述した０．２ｍｍになるように設定される（図６Ｂ）。このとき、下部チャック１０と上部チャック１１との間に密閉された貼り合わせ空間Ｓが形成され、この状態で、上部チャック１１の鉛直方向の位置が固定される。 In the bonding apparatus that holds the wafer W1 and the wafer W2 so as to face each other, the eccentric roll 32 of the height adjusting mechanism 30 is brought into contact with the lower surface of the edge portion 11b of the upper chuck 11 by the air cylinder 25 (see FIG. 2). The upper chuck 11 is lowered. At this time, the height of the contact point between the eccentric roll 32 and the lower surface of the edge portion 11b is set so that the distance between the wafer W1 and the wafer W2 is a predetermined distance, for example, 0.2 mm as described above (FIG. 6B). ). At this time, a sealed bonding space S is formed between the lower chuck 10 and the upper chuck 11, and the vertical position of the upper chuck 11 is fixed in this state.
　次に、吸気管１８（図２参照）によって貼り合わせ空間Ｓ内の雰囲気ガスを吸気して減圧し、貼り合わせ空間Ｓ内の圧力を、例えば、０．３気圧（＝０．０３ＭＰａ）に調整する。貼り合わせ空間Ｓ内の圧力が０．３気圧になると、上部チャック１１には、上部チャック１１の上面にかかる圧力（大気圧）と貼り合わせ空間Ｓ内の圧力との圧力差、例えば、（１−０．３）＝０．７気圧がかかり、保持部本体１１ａの中心部が撓み、該保持部材本体１１ａの撓みに伴って保持部本体１１ａに保持されたウエハＷ２の中心部も撓む（図６Ｃ）。 Next, the atmospheric gas in the bonding space S is sucked and decompressed by the intake pipe 18 (see FIG. 2), and the pressure in the bonding space S is adjusted to, for example, 0.3 atm (= 0.03 MPa). To do. When the pressure in the bonding space S becomes 0.3 atm, the upper chuck 11 has a pressure difference between the pressure (atmospheric pressure) applied to the upper surface of the upper chuck 11 and the pressure in the bonding space S, for example, (1 −0.3) = 0.7 atm is applied, the central portion of the holding portion main body 11a is bent, and the central portion of the wafer W2 held by the holding portion main body 11a is also bent in accordance with the bending of the holding member main body 11a ( FIG. 6C).
　このとき、ウエハＷ１、ウエハＷ２及び接着剤の温度は、例えば下部チャック１０又は上部チャック１１に設けられた加熱手段（図示省略）、例えば電熱ヒータ等によって接着剤の軟化温度である、例えば２００~２５０℃に加熱される。なお、このとき、保持部本体１１ａによってウエハＷ２を吸着する吸着圧力（０．１気圧）は、貼り合わせ空間Ｓ内の圧力（０．３気圧）よりも小さいので、ウエハＷ２は保持部本体１１ａに保持された状態を維持する。 At this time, the temperature of the wafer W1, the wafer W2, and the adhesive is, for example, a softening temperature of the adhesive by a heating means (not shown) provided in the lower chuck 10 or the upper chuck 11, such as an electric heater, for example, 200 to Heat to 250 ° C. At this time, since the adsorption pressure (0.1 atm) for attracting the wafer W2 by the holding unit main body 11a is smaller than the pressure (0.3 atm) in the bonding space S, the wafer W2 is held by the holding unit main body 11a. The state held in
　次いで、貼り合わせ空間Ｓの雰囲気ガスをさらに吸気して貼り合わせ空間Ｓ内の圧力を、例えば、０．１（＝０．１）気圧に調整すると、上部チャック１１の保持部本体１１ａがウエハＷ２を保持しきれなくなってウエハＷ２は下方に落下し、当該ウエハＷ２の全面がウエハＷ１の全面に当接する（図６Ｄ）。このとき、ウエハＷ２は、ウエハＷ１に当接した中心部から径方向外側に向かって順次当接する。従って、ウエハＷ２とウエハＷ１との接着面に空気が閉じ込められることがなく、ボイドは発生しない。 Next, when the atmosphere gas in the bonding space S is further sucked and the pressure in the bonding space S is adjusted to, for example, 0.1 (= 0.1) atmospheric pressure, the holding body 11a of the upper chuck 11 is moved to the wafer W2. As a result, the wafer W2 falls downward, and the entire surface of the wafer W2 comes into contact with the entire surface of the wafer W1 (FIG. 6D). At this time, the wafer W2 sequentially comes into contact with the wafer W1 from the central part in contact with the wafer W1 toward the radially outer side. Therefore, air is not confined on the bonding surface between the wafer W2 and the wafer W1, and no void is generated.
　その後、高さ調整機構３０の偏心ロール３２を回動することによって上部チャック１１を上方に押し上げる押圧力をなくし、上部チャック１１を、ウエハＷ１及びウエハＷ２を介して下部チャック１１に当接させる（図６Ｅ）。この状態で、加圧機構２０の圧力容器２１内に、流体供給管２２から、例えば圧縮空気を供給して圧力容器２１を下方に伸長させ（図２参照）、これによってウエハＷ２とウエハＷ１とを貼り合わせて貼り合わせ体３５を得る（図６Ｆ）。このとき、貼り合わせ体３５の外周部における押圧力は中央部における押圧力よりも大きくなる傾向があるが、本実施の形態では、上部チャック１１の外周部を高剛性のエッジ部１１ｂで構成したことにより、該高剛性のエッジ部１１ｂによって貼り合わせ体３５の外周部に作用する押圧力に対向して相殺できる。従って、貼り合わせ体３５の中央部及び外周部の厚さをバランスさせることができる。 Thereafter, the eccentric roll 32 of the height adjustment mechanism 30 is rotated to eliminate the pressing force that pushes the upper chuck 11 upward, and the upper chuck 11 is brought into contact with the lower chuck 11 via the wafer W1 and the wafer W2 ( FIG. 6E). In this state, for example, compressed air is supplied from the fluid supply pipe 22 into the pressure vessel 21 of the pressurizing mechanism 20 to extend the pressure vessel 21 downward (see FIG. 2), thereby the wafer W2 and the wafer W1. Are bonded together to obtain a bonded body 35 (FIG. 6F). At this time, the pressing force at the outer peripheral portion of the bonded body 35 tends to be larger than the pressing force at the central portion, but in the present embodiment, the outer peripheral portion of the upper chuck 11 is configured by a highly rigid edge portion 11b. Thus, the pressing force acting on the outer peripheral portion of the bonded body 35 can be offset by the highly rigid edge portion 11b. Accordingly, it is possible to balance the thicknesses of the central portion and the outer peripheral portion of the bonded body 35.
　本実施の形態によれば、上部チャック１１を、ウエハＷ２を保持する保持部本体１１ａと、該保持部本体１１ａとは分離され、保持部本体１１ａの外周部を支持するエッジ部１１ｂとで構成したことにより、上部チャック１１の剛性、特に上部チャック１１の外周部の剛性を高めて上部チャック１１における中央部と外周部との圧縮応力のばらつきを防止して貼り合わせ体３５における中央部の厚さと外周部の厚さを均一にすると共に、保持部本体１１ｂの撓み性を確保することができる。従って、貼り合わせ当初は、ウエハＷ２の中心部のみをウエハＷ１に貼り合わせ、その後、順次外周部に向かって貼り合わせることができ、これによって、ウエハＷ１とウエハＷ２との貼り合わせ面に発生し易いボイドの発生を防止することができる。 According to the present embodiment, the upper chuck 11 includes the holding unit main body 11a that holds the wafer W2 and the edge portion 11b that is separated from the holding unit main body 11a and supports the outer peripheral portion of the holding unit main body 11a. As a result, the rigidity of the upper chuck 11, particularly the rigidity of the outer peripheral portion of the upper chuck 11, is prevented to prevent variation in compressive stress between the central portion and the outer peripheral portion of the upper chuck 11 and the thickness of the central portion of the bonded body 35. In addition, the thickness of the outer peripheral portion can be made uniform, and the flexibility of the holding portion main body 11b can be ensured. Therefore, at the beginning of the bonding, only the central portion of the wafer W2 can be bonded to the wafer W1, and then bonded sequentially toward the outer peripheral portion, which occurs on the bonding surface of the wafer W1 and the wafer W2. Generation of easy voids can be prevented.
　すなわち、本実施の形態によれば、上部チャック１１において、ボイドの発生を回避するための可撓性と、貼り合わせ体３５における厚さのばらつきを抑えるための剛性の両立が可能となり、これによってボイドの発生を防止しつつ均一厚さの貼り合わせ体３５を得ることができる。 That is, according to the present embodiment, in the upper chuck 11, it is possible to achieve both the flexibility for avoiding the generation of voids and the rigidity for suppressing the thickness variation in the bonded body 35. The bonded body 35 having a uniform thickness can be obtained while preventing the generation of voids.
　また、本実施の形態によれば、上部チャック１１を、保持部本体１１ａと、該保持部本体１１ａの外周部を支持するエッジ部１１ｂとで構成したことにより、ウエハＷ２を保持する保持部本体１１ａの大きさを、相対的に小さくすることができる。これによって、保持部本体１１ａの剛性が向上して該保持部本体１１ａ及び上部チャック１１全体の変形量を減少させることができる。 Further, according to the present embodiment, the upper chuck 11 is constituted by the holding portion main body 11a and the edge portion 11b that supports the outer peripheral portion of the holding portion main body 11a, whereby the holding portion main body that holds the wafer W2. The size of 11a can be made relatively small. As a result, the rigidity of the holder main body 11a can be improved, and the amount of deformation of the holder main body 11a and the upper chuck 11 as a whole can be reduced.
　また、本実施の形態によれば、上部チャック１１のエッジ部１１ｂの周方向に沿って均等に配置された釣支部材１５の数を６個にしたことにより、上述の上部チャック１１を保持部本体１１ａとエッジ部１１ｂとで構成したこととの相乗作用によって、貼り合わせ体３５における外周部に作用する周方向に沿った圧縮応力のばらつきがなくなり、貼り合わせ体３５の外周部における周方向に沿った厚さをほぼ均一にすることができる。なお、釣支部材１６は、６個の他、４個又は８個とすることもできる。 Further, according to the present embodiment, the number of the fishing support members 15 that are evenly arranged along the circumferential direction of the edge portion 11b of the upper chuck 11 is set to six, so that the upper chuck 11 is held by the holding portion. Due to the synergistic effect of the configuration of the main body 11a and the edge portion 11b, there is no variation in compressive stress along the circumferential direction acting on the outer peripheral portion of the bonded body 35, and in the circumferential direction of the outer peripheral portion of the bonded body 35. The thickness along the line can be made almost uniform. In addition, the fishing support member 16 can also be four or eight other than six.
　本実施の形態において、上部チェック１１における外周部の剛性には、エッジ部１１ｂ、特に、エッジ部１１ｂの薄板部１１ｂ２の厚さが大きく影響する。従って、薄板部１１ｂ２の厚さを確保するために、下部チャック１０の外周部を部分的に切欠し、切欠部に相当する厚さだけ薄板部１１ｂ２の厚さを厚くすることもできる。 In the present embodiment, the rigidity of the outer peripheral portion of the upper check 11 is greatly affected by the thickness of the edge portion 11b, particularly the thin plate portion 11b2 of the edge portion 11b. Therefore, in order to ensure the thickness of the thin plate portion 11b2, the outer peripheral portion of the lower chuck 10 can be partially cut away, and the thickness of the thin plate portion 11b2 can be increased by a thickness corresponding to the cutout portion.
　本実施の形態において、貼り合わせ時のウエハＷ１、ウエハＷ２及びこれらを貼着する接着剤を加熱するために、下部チャック１０、上部チャック１１又はその近傍の部材に加熱装置が設けられるが、加熱装置としては公知の電熱ヒータ等が好適に起用される。加熱温度は接着剤を軟化させるのに必要な温度であり、例えば１５０~２５０℃、好ましくは２００~２５０℃である。また、必要に応じて貼り合わせ体３５等を冷却するために冷却装置を設けることもできる。冷却装置としては、例えば、貼り合わせ体３５に空気流を接触させる空冷装置、貼り合わせ体３５をクーリングプレート上に載置する冷却装置等が好適に用いられる。この場合、貼り合わせ体３５を片面から急激に冷却すると反りが発生する原因となることがある。従って、両面から冷却するか又はある程度温度を低下させた後、片面から冷却することが好ましい。 In the present embodiment, a heating device is provided in the lower chuck 10, the upper chuck 11 or a member in the vicinity thereof in order to heat the wafer W1, the wafer W2, and the adhesive for adhering them at the time of bonding. A known electric heater or the like is suitably used as the apparatus. The heating temperature is a temperature necessary for softening the adhesive, and is, for example, 150 to 250 ° C., preferably 200 to 250 ° C. Further, a cooling device can be provided to cool the bonded body 35 and the like as necessary. As the cooling device, for example, an air cooling device for bringing an air flow into contact with the bonded body 35, a cooling device for placing the bonded body 35 on a cooling plate, or the like is preferably used. In this case, if the bonded body 35 is rapidly cooled from one side, warping may occur. Therefore, it is preferable to cool from one side after cooling from both sides or lowering the temperature to some extent.
　また、本実施の形態において、上部チャック１１のエッジ部１１ｂを釣支する釣支部材１５のばね部材１５ａのばね力を調整可能に構成することが好ましく、これによって貼り合わせ体３５の外周部における厚さを調整することもできる。この場合において、ばね部材に代えてエアーシリンダ装置を適用することもでき、これによって、貼り合わせ操作中に釣支応力を調整することができるようになり、操作性が向上する。 Moreover, in this Embodiment, it is preferable to comprise so that the spring force of the spring member 15a of the fishing support member 15 which supports the edge part 11b of the upper chuck | zipper 11 can be adjusted, and in this, in the outer peripheral part of the bonding body 35 The thickness can also be adjusted. In this case, an air cylinder device can be applied in place of the spring member, whereby the fishing support stress can be adjusted during the bonding operation, and the operability is improved.
　本実施の形態において、ウエハＷ１にウエハＷ２を貼り合わせる場合について説明したが、本発明は、これに限定されるものではなく。ウエハＷ１にガラス基板Ｇを貼り合わせることもでき、貼り合わせ体３５を得るための貼り合わせ部材は、特に限定されない。 In the present embodiment, the case where the wafer W2 is bonded to the wafer W1 has been described, but the present invention is not limited to this. The glass substrate G can also be bonded to the wafer W1, and the bonding member for obtaining the bonded body 35 is not particularly limited.
　以上、本発明を実施の形態を用いて詳細に説明したが、本発明は、これらの実施の形態に限定されるものではない。 As mentioned above, although this invention was demonstrated in detail using embodiment, this invention is not limited to these embodiment.
１０　下部チャック
１１　上部チャック
１１ａ　保持部本体
１１ｂ　エッジ部
１１ｂ１　厚板部
１１ｂ２　薄板部
１２　筺体
１４　Ｏリング
１５　釣支部材
１６　支持板
１８　吸気機構
２０　加圧機構
２５　エアーシリンダ
２６　固定機構
３０　高さ調整機構
４０　上部チャック構造体
５０、１００　貼り合わせ装置
Ｗ　ウエハ DESCRIPTION OF SYMBOLS 10 Lower chuck 11 Upper chuck 11a Holding part main body 11b Edge part 11b1 Thick board part 11b2 Thin board part 12 Body 14 O-ring 15 Fishing support member 16 Support plate 18 Intake mechanism 20 Pressurization mechanism 25 Air cylinder 26 Fixing mechanism 30 Height adjustment mechanism 40 Upper chuck structure 50, 100 Bonding apparatus W Wafer

Claims (9)

  1. 　板状の第１部材と第２部材を貼り合わせる貼り合わせ装置であって、
    　前記第１部材を上面に載置して保持する第１の保持部と、
    　該第１の保持部の上部に対向配置され前記第２部材を保持する第２の保持部と、
    　前記第１の保持部と前記第２の保持部との間に形成される空間を減圧する吸気機構と、を有し、
    　前記第２の保持部は、剛性を有するエッジ部と、該エッジ部とは分割され当該エッジ部に外周部が支持された保持部本体とを有し、該保持部本体は、所定の圧力で当該保持部本体の一部が撓む弾性体からなることを特徴とする貼り合わせ装置。     A laminating apparatus for laminating a plate-like first member and a second member,
    A first holding unit for placing and holding the first member on an upper surface;
    A second holding part that is arranged opposite to the upper part of the first holding part and holds the second member;
    An intake mechanism for decompressing a space formed between the first holding part and the second holding part,
    The second holding portion has a rigid edge portion, and a holding portion main body that is divided from the edge portion and has an outer peripheral portion supported by the edge portion, and the holding portion main body has a predetermined pressure. A bonding apparatus characterized in that a part of the holding body is made of an elastic body.
  2. 　前記エッジ部は、周方向に沿って等間隔に設けられた４個~８個の釣支部材によって前記第２の保持部の上方に設けられた支持板に釣支されていることを特徴とする請求項１記載の貼り合わせ装置。 The edge portion is supported by a support plate provided above the second holding portion by four to eight fishing support members provided at equal intervals along the circumferential direction. The bonding apparatus according to claim 1.
  3. 　前記釣支部材は、６個であることを特徴とする請求項２記載の貼り合わせ装置。 The bonding apparatus according to claim 2, wherein the number of the fishing support members is six.
  4. 　前記第１の保持部と前記第２の保持部との間に形成される空間の気密性を保持するための気密性保持機構を有し、該気密性保持機構は、
    　前記第２の保持部の下面外周部に沿って設けられた環状のシール材であって、前記第１の保持部、前記第２の保持部及び当該シール材とで囲まれた空間の気密性を保持するシール材と、
    　該シール材の外側に設けられ、前記第２の保持部の下面に当接して前記第１の保持部材によって保持された第１部材と前記第２の保持部材によって保持された第２部材との間の間隔を調整する高さ調整機構と、を有することを特徴とする請求項１記載の貼り合わせ装置。     The airtight holding mechanism for holding the airtightness of the space formed between the first holding part and the second holding part, the airtight holding mechanism,
    An annular sealing material provided along the outer periphery of the lower surface of the second holding part, wherein the airtightness of the space surrounded by the first holding part, the second holding part and the sealing material Sealing material to hold,
    A first member that is provided outside the seal material and that is in contact with the lower surface of the second holding portion and is held by the first holding member; and a second member that is held by the second holding member. The bonding apparatus according to claim 1, further comprising a height adjusting mechanism that adjusts a gap between the two.
  5. 　前記高さ調節機構は、前記第１の保持部、前記第２の保持部及び前記シール材とで囲まれた空間の気密性を保持しつつ、前記第１部材と前記第２部材との間の間隔を調整することを特徴とする請求項４記載の貼り合わせ装置。 The height adjusting mechanism is provided between the first member and the second member while maintaining airtightness in a space surrounded by the first holding unit, the second holding unit, and the sealing material. The bonding apparatus according to claim 4, wherein an interval between the two is adjusted.
  6. 　前記第２の保持部の上部に設けられ、前記第２の保持部を下方に押圧する加圧機構を備えていることを特徴とする請求項１記載の貼り合わせ装置。 The bonding apparatus according to claim 1, further comprising a pressurizing mechanism provided on an upper portion of the second holding portion and pressing the second holding portion downward.
  7. 　前記加圧機構は、前記第２の保持部の前記保持部本体の上面を覆うように設けられた鉛直方向に伸縮自在の圧力容器を有し、該圧力容器内に流体を導入することによって前記第２の保持部を加圧することを特徴とする請求項６記載の貼り合わせ装置。 The pressurizing mechanism includes a pressure vessel that is vertically extendable so as to cover an upper surface of the holding portion main body of the second holding portion, and the fluid is introduced into the pressure vessel by introducing a fluid into the pressure vessel. The bonding apparatus according to claim 6, wherein the second holding unit is pressurized.
  8. 　貼り合わせ装置を用いて、板状の第１部材と第２部材を貼り合わせる貼り合わせ方法であって、
    　前記貼り合わせ装置は、
    　前記第１部材を上面に載置して保持する第１の保持部と、
    　該第１の保持部の上部に対向配置され前記第２部材を保持する第２の保持部と、
    　前記第１の保持部と前記第２の保持部との間に形成される空間を減圧する吸気機構と、を有し、
    　前記第２の保持部は、剛性を有するエッジ部と、該エッジ部とは分割され当該エッジ部に外周部が支持された保持部本体とを有し、該保持部本体は、所定の圧力で当該保持部本体の一部が撓む弾性体からなり、
    　前記貼り合わせ方法は、
    　前記第１の保持部に保持された第１部材と前記第２の保持部に保持された第２部材との
    間の間隔が所定の間隔になるように設定する工程と、
    　前記第１保持部と前記第２の保持部との間に形成される空間を減圧して前記第２の保持部における前記保持部本体の一部を撓ませ、当該第２の保持部に保持された前記第２部材の撓んだ一部を前記第１部材に当接させる工程と、
    　前記第１の保持部と前記第２の保持部との間に形成される空間をさらに減圧して前記第２部材の全面を前記第１部材の全面に貼り合わせる工程と、を有する
    ことを特徴とする貼り合わせ方法。     A laminating method for laminating a plate-like first member and a second member using a laminating apparatus,
    The laminating apparatus is
    A first holding part for placing and holding the first member on the upper surface;
    A second holding part that is arranged opposite to the upper part of the first holding part and holds the second member;
    An intake mechanism that depressurizes a space formed between the first holding part and the second holding part,
    The second holding part has a rigid edge part, and a holding part body that is divided from the edge part and has an outer peripheral part supported by the edge part, and the holding part body has a predetermined pressure. A part of the main body of the holding part is made of an elastic body that bends,
    The bonding method is as follows:
    Setting the interval between the first member held by the first holding unit and the second member held by the second holding unit to be a predetermined interval;
    The space formed between the first holding part and the second holding part is depressurized, and a part of the holding part main body in the second holding part is bent and held in the second holding part. Contacting the first member with a bent part of the second member that has been made;
    And a step of further depressurizing a space formed between the first holding portion and the second holding portion and bonding the entire surface of the second member to the entire surface of the first member. Bonding method.
  9. 　前記所定の間隔は、前記当接させる工程において、前記保持部本体の一部が撓んだ際、該保持部本体に保持された前記第２部材の一部が前記第１の保持部が保持する第１部材に当接する間隔であることを特徴とする請求項８記載の貼り合わせ方法。 In the abutting step, when the part of the holding part main body is bent, the predetermined interval is held by the first holding part by the part of the second member held by the holding part main body. The bonding method according to claim 8, wherein the interval is abutting against the first member.
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