WO2013057830A1 - 半導体機能素子付き機能糸とその製造方法 - Google Patents

半導体機能素子付き機能糸とその製造方法 Download PDF

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Publication number
WO2013057830A1
WO2013057830A1 PCT/JP2011/074296 JP2011074296W WO2013057830A1 WO 2013057830 A1 WO2013057830 A1 WO 2013057830A1 JP 2011074296 W JP2011074296 W JP 2011074296W WO 2013057830 A1 WO2013057830 A1 WO 2013057830A1
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WIPO (PCT)
Prior art keywords
semiconductor functional
semiconductor
yarn
functional element
functional
Prior art date
Application number
PCT/JP2011/074296
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English (en)
French (fr)
Japanese (ja)
Inventor
中田　仗祐
聡一郎 井本
郁夫 稲川
英稔 中村
敦士 増田
哲彦 村上
Original Assignee
京セミ株式会社
福井県
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Filing date
Publication date
Application filed by 京セミ株式会社, 福井県 filed Critical 京セミ株式会社
Priority to JP2013539482A priority Critical patent/JP5716197B2/ja
Priority to PCT/JP2011/074296 priority patent/WO2013057830A1/ja
Priority to TW101108711A priority patent/TW201318044A/zh
Publication of WO2013057830A1 publication Critical patent/WO2013057830A1/ja

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    • D—TEXTILES; PAPER
    • D02—YARNS; MECHANICAL FINISHING OF YARNS OR ROPES; WARPING OR BEAMING
    • D02G—CRIMPING OR CURLING FIBRES, FILAMENTS, THREADS, OR YARNS; YARNS OR THREADS
    • D02G3/00—Yarns or threads, e.g. fancy yarns; Processes or apparatus for the production thereof, not otherwise provided for
    • D02G3/44—Yarns or threads characterised by the purpose for which they are designed
    • D02G3/441—Yarns or threads with antistatic, conductive or radiation-shielding properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices
    • H01L31/188—Apparatus specially adapted for automatic interconnection of solar cells in a module
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Definitions

  • the present invention relates to a functional yarn with a semiconductor functional element and a manufacturing method thereof, and more particularly, a functional yarn with a semiconductor element in which a plurality of semiconductor functional elements are electrically connected in parallel by a pair of conductive wires to form a flexible string. It is related with technology to make available.
  • a string-like functional yarn having a light receiving function or a light emitting function having a plurality of semiconductor functional elements is used as a warp or a weft, and a plurality of conductive wires or insulating wires are used as a weft or
  • a woven mesh base material with a mesh-like semiconductor functional element woven as warp has been proposed.
  • Patent Document 1 a plurality of granular semiconductor functional elements having positive and negative electrodes at both ends are sandwiched between a pair of conductive wires and electrically connected in parallel, and the semiconductor functional elements and the conductive wires are connected to each other.
  • a functional string with a semiconductor functional element having a circular cross section embedded in a flexible transparent synthetic resin is disclosed.
  • Patent Document 2 discloses an electric woven or woven fabric in which a functional yarn on which a plurality of semiconductor functional elements are mounted is used as a warp and a conductive wire or an insulating wire is used as a weft.
  • This Patent Document 2 discloses a plurality of types of functional yarns. One of them is specifically described.
  • This functional yarn has an elongated belt-like substrate, and a plurality of functional yarns are formed on the substrate.
  • the functional string in order to manufacture the functional string, is manufactured by setting a functional thread in a predetermined mold, filling a transparent synthetic resin, and molding.
  • a functional thread in a predetermined mold, filling a transparent synthetic resin, and molding.
  • the functional cord of Patent Document 1 is flexible, the gap between adjacent semiconductor functional elements is embedded with a transparent synthetic resin and the radial outside of the semiconductor functional elements is thickly covered.
  • the functional string becomes thicker and heavier, so when weaving on a woven mesh substrate or fabric and sticking it on the surface of various objects, the thickness and weight of this functional string Is an obstacle. Since the functional string of Patent Document 1 requires a large amount of transparent synthetic resin, the manufacturing cost is expensive. Even if weaving a woven mesh substrate or fabric using this functional string, the synthetic resin is embedded between the semiconductor functional elements, resulting in a woven mesh substrate or fabric having no air permeability.
  • the functional yarn of Patent Document 2 has a three-dimensional structure in which a plurality of light emitting diodes are arranged on a belt-like substrate, it is extremely inflexible. Therefore, there is a problem that it becomes difficult to perform a function as a normal functional yarn such as weaving into a woven mesh base material or fabric. In particular, since the structure is such that a plurality of elements and contact portions are formed on a belt-like substrate, it becomes a functional yarn having a complicated structure, resulting in high cost.
  • An object of the present invention is to provide a method for producing a functional yarn with a semiconductor functional element suitable for mass production at low cost, to provide a lightweight and functional functional yarn with a semiconductor functional element that is flexible and breathable, To provide functional yarns with semiconductor functional elements that can be manufactured, to provide functional yarns with semiconductor functional elements suitable for the production of woven mesh substrates that can be mounted on the surface of various objects, and the like.
  • a manufacturing method for manufacturing a functional yarn with a semiconductor element according to claim 1 includes a plurality of granular semiconductor functional elements having positive and negative electrodes at both ends, and a flexible pair that connects the plurality of semiconductor functional elements in parallel.
  • the pair of conductive wires is supplied from a conductive wire supply source to an assembly stage, and the pair of conductive wires is supplied to the assembly stage.
  • the functional yarn with a semiconductor element according to claim 6 includes a plurality of granular semiconductor functional elements having positive and negative electrodes at both ends, and a flexible pair of first and second pairs that connect the plurality of semiconductor functional elements in parallel.
  • the functional yarn with a semiconductor functional element including a conductive line the pair of first and second conductive lines are arranged in parallel with a predetermined interval, and the first and second conductive lines are arranged between the first and second conductive lines.
  • the plurality of semiconductor functional elements are arranged at set intervals in the length direction of the conductive lines, the positive electrodes of the plurality of semiconductor functional elements are electrically connected to the first conductive lines, and the negative of the plurality of semiconductor functional elements are The electrode is electrically connected to the second conductive line.
  • functional yarns with semiconductor functional elements can be mass-produced continuously and inexpensively with a small number of processes.
  • a functional yarn with a semiconductor functional element that is excellent in flexibility and air permeability and is lightweight can be manufactured.
  • a functional yarn with a semiconductor functional element capable of freely setting the arrangement interval of the semiconductor functional elements can be manufactured.
  • a functional yarn with a semiconductor functional element which is excellent in flexibility and air permeability and is lightweight.
  • a functional yarn with a semiconductor functional element capable of freely setting the arrangement interval of the semiconductor functional elements can be realized.
  • a functional yarn with a semiconductor functional element that can be mass-produced at low cost can be realized.
  • a functional yarn with a semiconductor functional element suitable for manufacturing a thin woven mesh base material suitable for being attached to the surface of an object can be realized.
  • a heating step of heating and curing the conductive bonding material applied in the third step is provided.
  • B) After the third step, a coating step of coating the surface of the functional yarn with a semiconductor functional element with an insulating protective film having flexibility and light transmittance is provided.
  • One of the positive and negative electrodes of the semiconductor functional element is configured as a magnetic electrode, and the other electrode is configured as a nonmagnetic electrode.
  • the positive electrode is low-resistance connected to one end of the semiconductor functional element
  • the negative electrode is low-resistance connected to the other end of the semiconductor functional element opposite to the positive electrode
  • the first conductive line is The second conductive line is connected to the outer surface of the positive electrode and the second conductive line is connected to the outer surface of the negative electrode.
  • the first and second conductive wires are a bundle or stranded wire of any one or a plurality of types of fibers selected from glass fiber, carbon fiber, polyester fiber, aramid fiber, polyethylene fiber, and liquid crystal polymer fiber. It is comprised with the conductive wire which covered the metal surface of 1 or several metal wires in the shape of a coil.
  • the first and second conductive wires are formed of a bundle of metal fibers or a stranded wire.
  • the set interval is an interval of 1 ⁇ 2 times to 2 times the width of the semiconductor functional element.
  • the entire surfaces of the plurality of semiconductor functional elements and the pair of conductive wires are covered with a thin and thin insulating protective film having flexibility and light transmission.
  • the insulating protective film is made of any one synthetic resin film selected from paraxylylene resin, fluororesin, polyimide resin, and polyethylene terephthalate resin.
  • the plurality of semiconductor functional elements include a plurality of first semiconductor functional elements and a plurality of second semiconductor functional elements of a type different from the first semiconductor functional elements, and the preset setting A plurality of element array sets in which one or a plurality of second semiconductor functional elements are arranged on one end side of the first semiconductor functional element row are repeatedly formed in the length direction of the first and second conductive lines.
  • the first semiconductor functional element is a spherical semiconductor functional element having a light receiving function, and the second semiconductor functional element is a bypass diode connected in antiparallel to the first semiconductor functional element.
  • the first semiconductor functional element is a light emitting diode having a light emitting function, and the second semiconductor functional element is a bypass diode connected in antiparallel to the first semiconductor functional element.
  • All of the plurality of semiconductor functional elements are formed of spherical semiconductor functional elements having a light receiving function.
  • All of the plurality of semiconductor functional elements are formed of light emitting diodes having a light emitting function.
  • FIG. 1 is a front view of a functional yarn with a semiconductor functional element according to Example 1.
  • FIG. It is a partial expanded sectional view of FIG.
  • FIG. 3 is a side view of FIG. 2.
  • FIG. It is a side view of FIG. It is a top view of a light emitting diode. It is sectional drawing of a light emitting diode.
  • a functional yarn 1 with semiconductor functional elements (hereinafter referred to as functional yarn 1) is composed of a plurality of granular semiconductor functional elements 2 and a flexible connecting the plurality of semiconductor functional elements 2 in parallel. Flexibility and light transmission covering the entire surface of the pair of conductive first and second conductive lines 5 and 6 and the plurality of semiconductor functional elements 2 and the pair of first and second conductive lines 5 and 6 And a thin film-like insulating protective film 7.
  • the plurality of semiconductor functional elements 2 include a plurality of spherical solar cells 3 (corresponding to a first semiconductor functional element) having positive and negative electrodes 15 and 16 at both ends (see FIG. 4), Includes a plurality of spherical bypass diodes 4 (corresponding to a second semiconductor functional element) having positive and negative electrodes 25 and 26 at both ends of different types (see FIG. 5).
  • the functional yarn 1 includes an element array set 2A in which one or a plurality of bypass diodes 4 are arranged on one end side of a row of a preset number (for example, 19) of spherical solar cells 3, A plurality of sets are repeatedly formed in the length direction of the second conductive lines 5 and 6.
  • a set interval (for example, an interval similar to the diameter of the solar cell 3) is provided between the adjacent spherical solar cells 3 and between the spherical solar cell 3 and the spherical bypass diode 4.
  • a plurality of gaps 9 that are not covered with the insulating protective film 7 are formed between the adjacent semiconductor functional elements 2 due to the set interval, and the air permeability is improved by the plurality of gaps 9.
  • the functional yarn 1 shown in FIG. 1 only a part of the entire element array set 2A is shown.
  • the pair of first and second conductive lines 5 and 6 are arranged in parallel with a predetermined interval (about 1.2 mm, which is the same as the diameter of the solar battery cell 3). ing. Between the first and second conductive lines 5 and 6, a plurality of element array sets 2 ⁇ / b> A are arranged in series in the length direction of the conductive lines 5 and 6.
  • the outer surface of the negative electrode 16 of the plurality of spherical solar cells 3 and the outer surface of the positive electrode 25 of the plurality of spherical bypass diodes 4 are electrically connected to the first conductive wire 5 via the conductive bonding material 8, respectively.
  • the outer surface of the positive electrode 15 of the spherical solar battery cell 3 and the outer surface of the negative electrode 26 of the plurality of spherical bypass diodes 4 are electrically connected to the second conductive wire 6 via the conductive bonding material 8, respectively.
  • the functional yarn 1 can be continuously manufactured in a long thread shape by a manufacturing apparatus 40 and a manufacturing method described later.
  • the size of the semiconductor functional element 2, the interval between adjacent semiconductor functional elements 2, the number of spherical solar cells 3 and the number of spherical bypass diodes 4 in the element array set 2A, the thickness of the first and second conductive lines 5 and 6 The thickness and the like can be appropriately set according to the specification.
  • the set interval between adjacent semiconductor functional elements 2 is preferably at least 1/2 times and not more than 2 times the width of the semiconductor functional element 2. By setting this interval, it is possible to ensure the light transmittance and flexibility of the functional yarn 1, and it is possible to provide an arrangement space for the warp yarn or the weft yarn that intersects with the functional yarn 1 during weaving.
  • the spherical solar battery cell 3 (hereinafter referred to as the solar battery cell 3) has a spherical p-type silicon unit having a diameter of about 1.0 mm to 2.0 mm (in this embodiment, a diameter of 1.2 mm). Manufactured using crystals 11. A flat surface 12 is formed on a part of the surface of the p-type silicon single crystal 11, and n-type impurities are diffused in most of the spherical surface except the flat surface 12 and its vicinity to form an n-type diffusion layer 13.
  • a spherical pn junction 14 is formed at a position of about 1 ⁇ m from the surface of the n-type diffusion layer 13.
  • a positive electrode 15 anode electrode
  • a negative electrode 16 cathode electrode
  • An antireflection film 17 made of a transparent SiO 2 film is formed on the entire surface of the p-type silicon single crystal 11 and the n-type diffusion layer 13 other than the positive and negative electrodes 15 and 16.
  • the solar battery cell 3 can receive light from all directions except the axial direction connecting the positive and negative electrodes 15 and 16. For this reason, even if the incident direction of direct light fluctuates, light can be received, light in all directions including reflected light can be received, and the utilization efficiency of light entering the periphery of the solar battery cell 3 can be improved. Can be maximized.
  • the spherical bypass diode 4 (hereinafter referred to as bypass diode 4) has a spherical n-type silicon single crystal 21 having a diameter of about 1.0 mm to 2.0 mm (in this embodiment, a diameter of 1.2 mm). It is manufactured using.
  • a flat surface 22 is formed on a part of the surface of the n-type silicon single crystal 21, and p-type impurities are diffused into about half of the surface of the n-type silicon single crystal 21 excluding the flat surface 22, resulting in a thickness of about 20 ⁇ m.
  • a p-type diffusion layer 23 is formed.
  • a negative electrode 26 is spot-connected to the n-type surface of the flat surface 22 in a spot-like manner.
  • a metal film 27 that is in low-resistance contact with the p-type diffusion layer 23 is formed over most of the surface of the p-type diffusion layer 23 and is located on the opposite side of the negative electrode 26 with the center of the n-type silicon single crystal 21 in between.
  • the positive electrode 25 is connected to the top surface of the metal coating 27 in a spot-like low resistance manner.
  • the surface of the n-type silicon single crystal 21 other than the metal film 27 and the flat surface 22 is covered with an insulating film 28 made of a silicon oxide film.
  • each bypass diode 4 is connected in reverse parallel to the set number (19) of solar cells 3 in each element array set 2A described above, an excessive reverse voltage is applied to the plurality of solar cells 3.
  • the solar cell 3 has a function of bypassing the current and can be prevented from being overheated and damaged.
  • the first and second conductive wires 5 and 6 have a diameter of 0.1 mm tin-plated on the surface of a core 31 made of a bundle of a plurality of glass fibers (for example, a diameter of about 0.3 mm). It is configured by covering two thin metal wires 32 (for example, copper fine wires) of 05 mm in a coil shape.
  • the two fine metal wires 32 are wound around the right and left windings so as to cross each other. Since the conductive wires 5 and 6 have a structure in which two thin metal wires 32 are wound in a coil shape, the conductive wires 5 and 6 can be bent in any direction and have high durability even if the bending is repeated. Since a plurality of contact portions that are in electrical contact with each other are formed at a small interval due to the intersecting structure of the two fine metal wires 32, a conductive path that is much shorter than the actual length of the fine metal wires 32 is formed. Further, even if one of the two thin metal wires 32 is disconnected, the conductivity of the first and second conductive wires 5 and 6 is ensured, and the function of the functional yarn 1 is not impaired.
  • the conductive bonding material 8 is made of, for example, a conductive epoxy resin (a mixture of epoxy resin and silver powder).
  • a conductive epoxy resin is used as the conductive wires 5 and 6 and the positive and negative electrodes 15 of the solar battery cell 3. 16 or the contact portion of the bypass diode 4 with the positive and negative electrodes 25 and 26, and the conductive epoxy resin is heated, dried and cured, and the solar battery cell 3 and the bypass diode 4 are paired with the first pair.
  • the insulating protective film 7 is formed of, for example, a paraxylylene resin film (so-called parylene).
  • the insulating protective film 7 is formed so as to cover the entire surfaces of the plurality of solar cells 3, the plurality of bypass diodes 4, and the first and second conductive lines 5 and 6, for example, to a thickness of about 25 ⁇ m.
  • this functional yarn 1 regardless of the incident direction of light, when light is incident on the functional yarn 1 and this light is irradiated to a plurality of solar cells 3 arranged with the same polarity, solar cells
  • the light is received by the substantially spherical pn junction 14 formed in 3 and converted into electric energy by the photovoltaic power generation function (light receiving function) of the solar battery cell 3.
  • the electric energy is output to the outside through the first and second conductive wires 5 and 6 via the positive and negative electrodes 15 and 16 which are connected to both electrodes of the pn junction 14 and are opposed to each other with the center of the solar battery cell 3 interposed therebetween. Is done.
  • the functional yarn 1 outputs an output voltage of about 0.6 V when receiving light.
  • the magnitude of the output current of the functional yarn 1 is proportional to the number of solar cells 3.
  • the manufacturing apparatus 40 includes a semiconductor functional element supply source 41 on the most upstream side, a semiconductor functional element intermittent supply mechanism 42, a conductive wire supply source 43, an assembly stage 44, and a conductive bonding material application.
  • the manufacturing apparatus 40 illustrated in FIG. 7 only shows a schematic structure, and is not particularly limited to this structure.
  • the semiconductor functional element supply source 41 (hereinafter referred to as element supply source 41) includes a cell supply unit 41 ⁇ / b> A that supplies solar cells 3, a diode supply unit 41 ⁇ / b> B that supplies bypass diodes 4, An alignment mechanism 51 that aligns the battery cells 3 in the posture shown in FIG. 4 and aligns the bypass diode 4 in the posture shown in FIG. 5 and a plurality of semiconductor functional elements 2 supplied from the alignment mechanism 51 are assembled in an assembly stage 44. And a vibration feeder 52 that moves toward the side.
  • Each of the cell supply unit 41A and the diode supply unit 41B has a vibration function, and guides the solar cells 3 and the bypass diodes 4 to the gate means of the alignment mechanism 51 one by one using the vibration action.
  • the alignment mechanism 51 includes a gate unit that supplies one bypass diode 4 every time the 19 spherical solar cells 3 are supplied, and a camera unit that captures an image of the semiconductor functional element 2 located in the vicinity of the lowermost exit.
  • the plurality of semiconductor functional elements 2 are supplied in a state of being aligned on the vibration feeder 52 after the posture change, and conveyed to the downstream end by the vibration feeder 52.
  • the vibration feeder 52 includes a rail groove that guides the plurality of semiconductor functional elements 2 in a serial state in contact with each other and downstream. Since the vibration feeder 52 is disposed so as to be inclined downward slightly from the upstream side toward the downstream side, the semiconductor functional elements 2 sequentially supplied from the element supply source 41 are directed toward the downstream side in the rail groove. Move while sliding.
  • an inspection device 53 capable of inspecting the semiconductor functional elements 2 one by one is provided in the middle of the vibration feeder 52.
  • the inspection device 53 includes a pair of inspection needles 53a, and the pair of inspection needles 53a is connected to positive and negative electrodes of the semiconductor functional element 2 on the vibration feeder 52 (in the case of the solar battery cell 3, positive and negative electrodes 15 and 16).
  • the positive and negative electrodes 25 and 26 are brought into contact with each other to check the electrical characteristics and the like, and the semiconductor functional element 2 is finely adjusted so as to have an intended posture.
  • the ratio of the number of bypass diodes 4 to the number of spherical solar cells 3 is maintained at approximately 19: 1, and defective products are generated. The ratio may collapse. Note that when the semiconductor functional element 2 is inspected before the semiconductor functional element 2 is supplied to the element supply source 41, the above-described inspection apparatus 53 can be omitted.
  • the semiconductor functional element intermittent supply mechanism 42 (hereinafter referred to as the intermittent supply mechanism 42) is provided between the downstream end of the vibration feeder 52 and the assembly stage 44.
  • the intermittent supply mechanism 42 includes a guide rail 42a, a carriage 42b movable along the guide rail 42a, and vacuum tweezers 42c supported by the carriage 42b.
  • the semiconductor functional element 2 at the downstream end of the vibration feeder 52 is supplied between the pair of pulleys 43b at a predetermined time interval in which the interval between the semiconductor functional elements 2 in the assembly stage 44 is constant. And sandwiched between the first and second conductive wires 5 and 6. In this state, the first and second conductive lines corresponding to the positive and negative electrodes of the semiconductor functional element 2 (the positive and negative electrodes 15 and 16 in the case of the solar battery cell 3 and the positive and negative electrodes 25 and 26 in the case of the bypass diode 4). 5 and 6 are brought into contact.
  • a negative pressure is introduced into the vacuum tweezer means 42c, and a negative pressure is introduced when the semiconductor functional element 2 is adsorbed, and a negative pressure is released when the adsorption of the semiconductor functional element 2 is released. ing.
  • the assembly stage 44 moves a pair of conductive wires 5 and 6 and a plurality of semiconductor functional elements 2 (solar cells 3 and bypass diodes 4) from the upstream side toward the downstream side.
  • the assembly stage 44 is a stage for manufacturing the functional yarn 1 in the final form, and the downstream side while holding the semiconductor functional element 2 supplied from the element supply source 41 by the intermittent supply mechanism 42 between the pair of conductive wires 5 and 6.
  • a holding guide member (not shown) is provided to guide the head.
  • the conductive wire supply source 43 includes a pair of supply reels 43 a that are rotatably supported by a machine frame of the manufacturing apparatus 40 and a pair of pulleys 43 b.
  • the pair of supply reels 43 a are disposed on the uppermost stream side of the assembly stage 44 and above and below the assembly stage 44, respectively.
  • a pair of conductive lines 5 and 6 are supplied from the conductive line supply source 43 to the assembly stage 44 from above and below, and are converted into a horizontal state by a pair of pulleys 43b to sandwich the semiconductor functional element 2.
  • the air is supplied to the downstream side at a predetermined interval and is taken up intermittently by the take-up mechanism 48.
  • the tip portions of the pair of conductive wires 5 and 6 are fixed to a winding mechanism 48 described later, and the pair of conductive wires 5 and 6 are intermittently moved at a constant speed in conjunction with the winding mechanism 48. Pulled out.
  • the conductive bonding material application mechanism 45 As shown in FIG. 7, the conductive bonding material application mechanism 45 (hereinafter referred to as application mechanism 45) is provided on the downstream side of the pair of pulleys 43 b, and is a pair of application coatings disposed above and below the assembly stage 44. Nozzle 45a. The pair of application nozzles 45a can be switched between a retracted position separated in the vertical direction and an approach position where the conductive bonding material 8 can be applied. When the solar cell 3 to be applied moves to a predetermined position, the conductive electrode 5a and 6 and the positive and negative electrodes 15 and 16 come into contact with each other from the pair of application nozzles 45a. A conductive bonding material 8 made of epoxy resin is discharged, and the conductive wire 8 is electrically connected between the first conductive wire 5 and the negative electrode 16 and between the second conductive wire 6 and the positive electrode 15. Connecting.
  • the heating mechanism 46 is provided on the downstream side of the coating mechanism 45.
  • the heating mechanism 46 includes a pair of main body members 46a disposed above and below the assembly stage 44, and a pair of infrared irradiation units 46b fixed to the pair of main body members 46a.
  • the heating mechanism 46 heats the conductive bonding material 8 by locally irradiating infrared rays to the conductive bonding material 8 applied to the contact portion between the solar battery cell 3 and the pair of conductive wires 5 and 6. Then, it is dried and cured in a short time to make a strong mechanical and electrical connection. In addition, you may make it irradiate with warm air instead of infrared rays.
  • the protective film coating mechanism 47 As shown in FIG. 7, the protective film coating mechanism 47 is provided on the downstream side of the heating mechanism 46.
  • the protective film coating mechanism 47 has a tunnel-like passage hole, and a pair of passages that pass by a known chemical vapor deposition method using parylene that is a paraxylene-based polymer while the functional yarn 1 passes through the passage hole.
  • the conductive wires 5 and 6 and the entire surface of the solar battery cell 3, that is, the entire surface of the functional yarn 1 are covered with an insulating protective film 7 having flexibility and light transmission.
  • the take-up mechanism 48 includes a take-up roller 48a whose rotation shaft is oriented vertically and a rotation drive unit (not shown) that rotationally drives the take-up roller 48a.
  • the take-up roller 48a is supported by a machine frame (not shown) of the manufacturing apparatus 40 so as to be rotatable.
  • the winding roller 48a winds up the functional yarn 1 while intermittently pulling out one pitch at a time in conjunction with other mechanisms such as the element moving mechanism 42 and the coating mechanism 45.
  • a control unit 49 for controlling the manufacturing apparatus 40 is provided.
  • an element supply source 41 an intermittent supply mechanism 42, a conductive wire supply source 43, a conductive bonding material application mechanism 45, an overheating mechanism 46, a protective film.
  • the covering mechanism 47 and the winding mechanism 48 are controlled.
  • the manufacturing apparatus 40 shown in FIG. 7 uses a plurality of granular semiconductor functional elements 2 (solar cells 3 and bypass diodes 4) and a pair of flexible firsts that connect the plurality of semiconductor functional elements 2 in parallel.
  • the description will focus on the solar battery cell 3, but the same applies to the bypass diode 4.
  • a pair of first and second conductive lines 5 and 6 are supplied from the conductive line supply source 43 to the assembly stage 44 from above and below.
  • the pair of conductive wires 5 and 6 is changed in a parallel state in which the plurality of solar cells 3 can be sandwiched via the positive and negative electrodes 15 and 16 by the pair of pulleys 43 b.
  • the pair of conductive lines 5 and 6 are supplied in an intermittent feed operation in conjunction with the intermittent supply mechanism 42. To do. This feeding operation is controlled by controlling the winding speed of the winding mechanism 48 by the control unit 49.
  • the plurality of solar cells 3 are supplied to the alignment mechanism 51, and the alignment mechanism 51 causes the solar cells 3 to face the conductive direction connecting the pair of positive and negative electrodes 15, 16 up and down.
  • the vibration feeder 52 After being aligned in a state where the flat surfaces 12 of the solar battery cells 3 are on the lower side.
  • the solar cells 3 supplied to the vibration feeder 52 sequentially move downstream along the rail groove of the vibration feeder 52.
  • the inspection device 53 inspects the electrical characteristics of the solar cells 3 one by one.
  • the solar cells 3 are supplied to the assembly stage 44 one by one from the element supply source 41 by the vacuum tweezer means 42 b of the intermittent supply mechanism 42.
  • the number of solar cells 3 supplied to the assembly stage 44 is not limited to one, but a plurality of solar cells 3 may be supplied at a time.
  • the pair of coating nozzles 45a of the coating mechanism 45 approaches from the separated position.
  • the paste-like conductive bonding material 8 is applied to the portions where the pair of conductive wires 5 and 6 and the positive and negative electrodes 15 and 16 of the solar battery cell 3 are in contact with each other by the pair of coating nozzles 45a.
  • coating since the electrically-conductive joining material 8 will be in a semi-dry state while the photovoltaic cell 3 is moving downstream, the photovoltaic cell 3 is temporarily fixed to a pair of conductive wires 5 and 6.
  • the fourth step when the solar battery cell 3 coated with the conductive bonding material 8 in the third step reaches the position of the heating mechanism 46, a pair of infrared irradiation portions 46b of the heating mechanism 46 are coated.
  • the conductive bonding material 8 is hardened in a short time to make a strong mechanical and electrical connection. This process corresponds to a heating process.
  • parylene which is a paraxylene polymer
  • parylene which is a paraxylene polymer
  • the entire surface of the functional yarn 1 (the pair of conductive wires 5 and 6 and the solar battery cell 3) is covered with an insulating protective film 7 having flexibility and light transmittance by a known chemical vapor deposition method. This amount corresponds to the coating step.
  • the pair of conductive wires 5, 6 to which the plurality of solar cells 3 are attached that is, the functional yarn 1 is taken up by the take-up roller of the take-up mechanism 48.
  • 48a is housed while intermittently winding one pitch at a time.
  • the functional yarn 1 can be stored while being wound up one pitch at a time by the winding mechanism 48, the functional yarn 1 can be continuously formed in the assembly stage 44, and mass productivity can be improved. it can. Moreover, since it can convey in the winding roller 48a unit of the winding mechanism 48, a flowability can be improved. This step corresponds to the fourth step of claim 1.
  • the functional yarn 1 of the present invention can be mass-produced continuously and inexpensively efficiently with a small number of steps.
  • a functional yarn 1 that is excellent in flexibility and air permeability and is lightweight can be manufactured.
  • a functional yarn 1 can be manufactured in which the arrangement interval of the semiconductor functional elements 2 (solar cells 3 and bypass diodes 4) can be freely set.
  • a functional yarn 1 which is excellent in flexibility and air permeability and is lightweight.
  • a functional yarn 1 that can freely set the arrangement interval of the semiconductor functional elements 2 can be realized.
  • a functional yarn 1 that can be mass-produced at low cost can be realized. Since the thickness (direction perpendicular to the width) of the functional yarn 1 is small, it is possible to manufacture a thin woven mesh substrate suitable for being attached to the surface of an object.
  • the functional yarn 1 can be applied to the warp in the longitudinal direction and the weft in the width direction of the woven mesh base material or the fabric without depending on the size. It can also be applied to weaving methods.
  • This functional yarn 1 is a lightweight and flexible string-like intermediate product, and is applied to various objects such as a woven mesh base material, fabric, solar battery panel having a light receiving function, etc. it can.
  • a functional yarn 1A in which the functional yarn 1 of the first embodiment is partially changed and a manufacturing apparatus in which the manufacturing apparatus 40 for manufacturing the functional yarn 1A is partially changed will be described.
  • Constituent elements similar to those in FIG. 1 are denoted by the same reference numerals, description thereof is omitted, and only different constituent elements are described.
  • the functional yarn 1A will be described.
  • the functional yarn 1 ⁇ / b> A includes a plurality of granular semiconductor functional elements 2 and a flexible pair of first and second conductive elements that connect the plurality of semiconductor functional elements 2 in parallel.
  • a thin insulating insulating film 7 that is flexible and light transmissive and covers the entire surfaces of the wires 5 and 6, the plurality of semiconductor functional elements 2, and the pair of first and second conductive wires 5 and 6; It has.
  • the plurality of semiconductor functional elements 2 includes a plurality of light emitting diodes 61 (corresponding to a first semiconductor functional element) having positive and negative electrodes 73 and 74 at both ends (see FIGS. 10 and 11), and the light emitting diodes 61. It includes a plurality of bypass diodes 62 (corresponding to a second semiconductor functional element) having positive and negative electrodes 78 and 79 at both ends of different types.
  • an element array set in which one or a plurality of bypass diodes 62 are arranged on one end side of a row of a preset number (for example, 19) of light emitting diodes 61 is provided as first and second conductive elements.
  • a plurality of sets are repeatedly formed in the length direction of the lines 5 and 6.
  • a set interval (for example, a length approximately equal to the width of the light emitting diode 61) is provided between the adjacent light emitting diodes 61 or between the light emitting diode 61 and the bypass diode 62.
  • a plurality of gaps 9A that are not covered with the insulating protective film 7 are formed between the adjacent semiconductor functional elements 2 due to the set interval, and the air permeability is improved by the plurality of gaps 9A.
  • the functional yarn 1A shown in FIG. 8 only a part of the whole is shown.
  • the pair of first and second conductive lines 5 and 6 are in a parallel state with a predetermined interval (a length approximately equal to the width of the ceramic base 72 of the light emitting diode 61). Is arranged.
  • a plurality of element array groups are arranged in series in the length direction of the conductive lines 5 and 6 between the first and second conductive lines 5 and 6.
  • the outer surfaces of the positive electrodes 73 of the plurality of light emitting diodes 61 and the outer surfaces of the negative electrodes 79 of the plurality of bypass diodes 62 are electrically connected to the first conductive wire 5 via the conductive bonding material 8, respectively.
  • the outer surface of the negative electrode 74 and the outer surface of the positive electrode 78 of the plurality of bypass diodes 62 are electrically connected to the second conductive wire 6 via the conductive bonding material 8, respectively.
  • This functional yarn 1A can be continuously produced in the form of a long yarn.
  • the light emitting diode 61 includes an LED chip 65 in which a planar pn junction 68 is formed from an n-type layer 66 and a p-type layer 67.
  • the semiconductor material and characteristics of the mold layer 67 are not particularly limited.
  • a thin-film cathode electrode 69 is connected to the lower end portion of the n-type layer 66 with a low resistance, and an anode electrode 71 is connected to the upper end portion of the p-type layer 67 with a low resistance.
  • a ceramic base 72 having a thickness of about 3.0 mm and a width of about 4.0 mm is provided below the LED chip 65.
  • Positive electrodes 73 are formed on the right end and right side of the upper surface of the ceramic base 72, and negative electrodes 74 are formed on the left and left sides of the upper surface on the opposite side of the positive electrode 73.
  • the cathode electrode 69 of the LED chip 65 is fixedly connected to the negative electrode 74, and the anode electrode 71 is connected to the positive electrode 73 via the lead wire 76.
  • the upper side of the ceramic base 72 is covered with a protective cover 77 having a hemispherical height of about 2.0 mm with a transparent epoxy resin.
  • the light emitting diode 61 radiates light in the hemispherical direction through the protective cover 77.
  • the bypass diode 62 shown in FIG. 8 is formed in the same outer shape as the light-emitting diode 61. However, in the functional aspect, as in the bypass diode 4 of the first embodiment, a set number of elements are arranged in each element array set. By being connected in reverse parallel to the light emitting diodes 61, it has a function of bypassing current when an excessive reverse voltage is applied to the plurality of light emitting diodes 61, and the plurality of light emitting diodes 61 are overheated and damaged. Can be prevented.
  • the manufacturing apparatus for the functional yarn 1A basically has the same various mechanisms as the manufacturing apparatus 40 shown in FIG. 7 of the first embodiment.
  • the upstream winding apparatus from the upstream inspection apparatus 53 is used.
  • up to 48 are arranged in a vertical plane suitable for the production of the functional yarn 1
  • the inspection device 53 to the winding mechanism 48 are compared with the first embodiment. It is arranged in a horizontal plane rotated 90 degrees.
  • the element supply source 41 is It is desirable to supply the semiconductor functional element 2 so that the hemispherical parts are aligned so as to face upward. Therefore, in the manufacturing apparatus for the functional yarn 1A, the element supply source 41 aligns the semiconductor functional element 2 in the posture shown in FIG.
  • the electrodes are supplied in a state where the conductive direction connecting the electrodes 78 and 79 is aligned in the horizontal direction (from the front side to the rear side in FIG. 7), and the conductive line supply source 43 is connected to the pair of conductive lines 5.
  • 6 are supplied from the left-right direction, and the application mechanism 45 applies the conductive bonding material 8 to the contact portion between the pair of conductive wires 5, 6 and the semiconductor functional element 2 from the left-right direction, and finally the functional yarn 1A.
  • the first embodiment is the same as the first embodiment with respect to the manufacturing method, except that the arrangement state of various mechanisms of the manufacturing apparatus 40 is different.
  • This functional yarn 1A can be applied to the warp in the longitudinal direction and the weft in the width direction of the woven mesh base material and the fabric, regardless of the size, and the complicated weaving methods such as plain weave, twill weave and satin weave It can also be applied to.
  • This functional yarn 1A is a lightweight and flexible string-like intermediate material product, and can be applied to various objects such as woven mesh base materials, fabrics, and light emitting panels having a light emitting function. . Since other operations and effects are substantially the same as those of the first embodiment, description thereof is omitted.
  • a pn junction may be formed by forming a p-type diffusion layer in a spherical n-type silicon crystal.
  • the number of the fine metal wires of the first and second conductive wires 5 and 6 in the first and second embodiments need not be limited to two, and the two or more fine metal wires can be covered in a coil shape. You may do it.
  • the metal thin wire is tin-plated, it may be silver-plated instead of tin plating, or the metal thin wire may be composed of a single metal.
  • the conductive wires 5 and 6 are made of a bundle or twisted wire of any one or plural kinds of fibers selected from carbon fiber, polyester fiber, aramid fiber, polyethylene fiber, and liquid crystal polymer fiber instead of glass fiber.
  • the surface may be composed of conductive wires 5 and 6 in which one or more fine metal wires are covered in a coil shape.
  • the core material of the conductive wires 5 and 6 is any one selected from general synthetic fibers, natural fibers, and composite fibers that can form woven fabrics and fabrics (so-called textiles). You may comprise from a bundle or a twisted wire. Furthermore, the conductive wires 5 and 6 may be formed of a bundle of metal fibers or a stranded wire. You may employ
  • Insulating protective film 7 of Examples 1 and 2 above instead of paraxylylene resin coating (parylene), any one synthetic resin selected from fluororesin, polyimide resin, and polyethylene terephthalate resin You may form from the film of this, and you may form with the synthetic resin material which has light transmittance and flexibility other than these.
  • the conductive epoxy resin is used as the conductive bonding material 8 of the first and second embodiments, it is not necessary to be limited to these, solder paste such as tin and silver, and other various paste forms. A conductive material may be used.
  • Spherical bodies made of spherical or hemispherical stones, glass, ceramics, or synthetic resins that are unique or colored to improve design and physical properties in the functional yarns 1 and 1A of Examples 1 and 2
  • hemispherical bodies may be mixed in the plurality of solar cells 3 and the plurality of light emitting diodes 61.
  • the ratio between the solar cells 3 and the bypass diodes 4 (or the light emitting diodes 61 and the bypass diodes 62) of the element array set 2A need not be limited to 19: 1.
  • the number of battery cells 3 can be increased and set to various ratios such as 39: 1.
  • the element array set 2A includes the bypass diodes 4, 62.
  • the element array set 2A is not particularly limited to this configuration, and the bypass diodes 4, 62 are omitted.
  • All of the plurality of semiconductor functional elements 2 may be constituted by the solar battery cell 3 or the light emitting diode 61.
  • the element supply source 41 of the manufacturing apparatus 40 can omit the element supply source 41B that supplies the bypass diode 4, and the element supply source 41 can have a simple structure.
  • the functional yarns 1 and 1A are flexible and light transmissive so as to cover the entire surfaces of the plurality of semiconductor functional elements 2 and the pair of first and second conductive wires 5 and 6.
  • the insulating protective film 7 is not necessarily required, and the insulating protective film 7 may be omitted.
  • the insulating protective film 7 of the functional yarn 1 of the first embodiment may be omitted, and the functional yarn 1B shown in FIGS. 12 and 13 may be employed, or the functional yarn 1A of the second embodiment may be insulated.
  • the functional yarn 1C shown in FIGS. 14 and 15 may be adopted by omitting the protective film 7.
  • the same components as those in the functional yarn 1 of the first embodiment are denoted by the same reference numerals and description thereof is omitted.
  • the functional yarn 1C has the same configuration as the functional yarn 1A of the second embodiment. Elements are given the same reference numerals and description thereof is omitted.
  • a silver alloy nonmagnetic conductive material added with aluminum or antimony is used.
  • Fe, Co, A powdery magnetic material such as Ni is preliminarily contained so that one of the positive and negative electrodes has magnetism (the other electrode is made of a nonmagnetic conductive material). Since the magnetic electrode can adsorb magnetic force, it is not particularly necessary to perform the magnetization process so that the direction of the magnetic field is aligned with a predetermined direction. However, in order to increase the attracting force when attracted by a magnetic force, it is desirable to perform the magnetization process so that the magnetic field direction of the magnetized electrode is aligned with the direction connecting the positive and negative electrodes.
  • the light-emitting diode 61 and the bypass diode 62 of the second embodiment are similarly connected to one of the positive and negative electrodes 73 and 74 or the positive and negative electrodes 78 and 79.
  • the other electrode may be magnetic and the other electrode may be non-magnetic.
  • a silver alloy is used as the nonmagnetic conductive material, it is not necessary to limit to this material in particular, and a material having a known conductivity can be applied. Applicable.
  • the manufacturing apparatus 40 of Example 1 instead of the element supply source 41, an element supply source 81 including an alignment mechanism 51A capable of aligning the semiconductor functional element 2A in a predetermined posture using the magnetism of the electrode may be employed.
  • the positive electrode 15 of the solar battery cell 3A is magnetic (the negative electrode 16 is a nonmagnetic electrode), and the negative electrode 26 of the bypass diode 4A is magnetic (positive electrode). 25 is a non-magnetic electrode)
  • the element supply source 81 includes a cell supply unit 41 ⁇ / b> A that supplies the solar cells 3 ⁇ / b> A, a diode supply unit 41 ⁇ / b> B that supplies the bypass diode 4 ⁇ / b> A, and the solar cells 3 ⁇ / b> A in FIG. 4.
  • the alignment mechanism 51A uses the magnetic means to supply the gate means for supplying one bypass diode 4A and the semiconductor functional element 2A located near the bottom outlet.
  • the magnetic force generating part 82 that attracts the magnetic electrode side downward to convert it into the desired posture and aligns it, and pushes the semiconductor functional element 2A aligned by the magnetic force generating part 82 toward the vibration feeder 52 side. And a pushing portion 83 to be moved.
  • the semiconductor functional element 2 can be easily converted into the desired posture and aligned as compared with the camera means and the rotating means of the alignment mechanism 51. Since the other configuration is the same as that of the manufacturing apparatus 40, the description thereof is omitted.
  • the negative electrode 16 of the solar battery cell 3A may have magnetism
  • the positive electrode 25 of the bypass diode 4A may have magnetism.
  • the negative electrode 79 of the bypass diode 62 may have magnetism
  • the negative electrode 74 of the light emitting diode 61 may have magnetism
  • the positive electrode 78 of the bypass diode 62 may have magnetism.
  • magnetism may be added to one of the electrodes, and the magnet may be aligned in an intended posture using the magnetism of the electrode in the production stage of the functional yarn 1A.
  • the solar cell 3, the light emitting diode 61, and the bypass diodes 4, 62 are adopted as the semiconductor functional element 2 of the first and second embodiments, it is not particularly limited to these elements.
  • Functional yarns can be manufactured by using various semiconductor functional elements such as various detection sensors that can detect pressure, sound, etc., and heat resistors that generate heat when energized.
  • a functional yarn is manufactured by adopting a thermal resistor as the semiconductor functional element 2
  • clothing having a heat function can be realized by applying the functional yarn with the thermal resistor to clothing.
  • the functional yarn with a semiconductor functional element according to the present invention is flexible and breathable, and can be applied to a thin and lightweight woven mesh substrate or fabric.
  • a solar cell panel or a lighting panel that is excellent in design by being incorporated in the wall surface of a building, and can be mounted on the body of a vehicle to improve the design.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Textile Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Led Device Packages (AREA)
  • Yarns And Mechanical Finishing Of Yarns Or Ropes (AREA)
  • Woven Fabrics (AREA)
PCT/JP2011/074296 2011-10-21 2011-10-21 半導体機能素子付き機能糸とその製造方法 WO2013057830A1 (ja)

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TW101108711A TW201318044A (zh) 2011-10-21 2012-03-14 附有半導體功能元件之功能絲線及其製造方法

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018025525A1 (ja) * 2016-08-04 2018-02-08 株式会社村田製作所 電子機能部材およびそれを用いた編物製品並びに電子機能部材の製造方法
CN108470790A (zh) * 2017-02-20 2018-08-31 优若特恩有限公司 将多个太阳能电池装配于载体上的设备及其装配线与方法
WO2018216253A1 (ja) * 2017-05-26 2018-11-29 株式会社村田製作所 繊維製品およびその製造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004001858A1 (ja) * 2002-06-21 2003-12-31 Josuke Nakata 受光又は発光用デバイスおよびその製造方法
JP2006313871A (ja) * 2004-10-29 2006-11-16 Clean Venture 21:Kk 電子部品の位置決め方法、ならびに、電子部品およびその製造方法
JP2007314925A (ja) * 2006-04-27 2007-12-06 Hideo Hirose 電子繊維又は電子糸及びこれを用いた繊維製品
WO2009011013A1 (ja) * 2007-07-18 2009-01-22 Kyosemi Corporation 太陽電池セル
WO2010016099A1 (ja) * 2008-08-08 2010-02-11 京セミ株式会社 採光型太陽電池モジュール
JP2011018683A (ja) * 2009-07-07 2011-01-27 Mitsubishi Electric Corp 薄膜太陽電池およびその製造方法
JP2011074512A (ja) * 2009-09-29 2011-04-14 Fukui Prefecture ｅ−テキスタイル用導電糸およびそれを用いた織編物

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004001858A1 (ja) * 2002-06-21 2003-12-31 Josuke Nakata 受光又は発光用デバイスおよびその製造方法
JP2006313871A (ja) * 2004-10-29 2006-11-16 Clean Venture 21:Kk 電子部品の位置決め方法、ならびに、電子部品およびその製造方法
JP2007314925A (ja) * 2006-04-27 2007-12-06 Hideo Hirose 電子繊維又は電子糸及びこれを用いた繊維製品
WO2009011013A1 (ja) * 2007-07-18 2009-01-22 Kyosemi Corporation 太陽電池セル
WO2010016099A1 (ja) * 2008-08-08 2010-02-11 京セミ株式会社 採光型太陽電池モジュール
JP2011018683A (ja) * 2009-07-07 2011-01-27 Mitsubishi Electric Corp 薄膜太陽電池およびその製造方法
JP2011074512A (ja) * 2009-09-29 2011-04-14 Fukui Prefecture ｅ−テキスタイル用導電糸およびそれを用いた織編物

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018025525A1 (ja) * 2016-08-04 2018-02-08 株式会社村田製作所 電子機能部材およびそれを用いた編物製品並びに電子機能部材の製造方法
CN108470790A (zh) * 2017-02-20 2018-08-31 优若特恩有限公司 将多个太阳能电池装配于载体上的设备及其装配线与方法
CN108470790B (zh) * 2017-02-20 2023-11-17 优若特恩有限公司 将多个太阳能电池装配于载体上的设备及其装配线与方法
WO2018216253A1 (ja) * 2017-05-26 2018-11-29 株式会社村田製作所 繊維製品およびその製造方法
CN110678595A (zh) * 2017-05-26 2020-01-10 冈本株式会社 纤维产品及其制造方法

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