WO2013047622A1 - Display device and display device manufacturing method - Google Patents

Abstract

Provided is a display device that is less likely to reflect outside light and has a large aperture ratio. A light-emitting section (30) is provided inside a BM aperture section (53) in a plan view, said light-emitting section being defined by an edge cover (25) that is provided on the edge of a reflecting electrode (21). In addition, a low-reflection treatment is applied to a region around the reflecting electrode (21) in order to form a low-reflection region (212) where incident outside light is less likely to be reflected. Furthermore, in the plan view, a region of the reflecting electrode (21) formed inside the BM aperture section (53) but not used for the light-emitting section (30) constitutes the low-reflection region (212). Consequently, the provided display device prevents reflection of outside light and has a large aperture ratio.

Description

Display device and manufacturing method of display device

The present invention relates to a display device that suppresses unnecessary reflection of outside incident light and improves light utilization efficiency, and a method for manufacturing the same.

In recent years, flat panel displays have been used in various products and fields, and further flat panel displays are required to have larger sizes, higher image quality, and lower power consumption.

Under such circumstances, an organic EL display device including an organic EL element using electroluminescence of an organic material (Electro Luminescence: hereinafter referred to as “EL”) is an all-solid-state type, driven at a low voltage, As a flat panel display excellent in terms of high-speed response, self-luminous property, wide viewing angle characteristics, etc., it has attracted a great deal of attention.

An organic EL display device has, for example, a configuration in which an organic EL element electrically connected to a TFT is provided on a substrate made of a glass substrate or the like provided with a TFT (Thin Film Transistor). .

The organic EL element is a light-emitting element that can emit light with high luminance by low-voltage direct current drive, and has a structure in which a first electrode, an organic EL layer, and a second electrode are stacked in this order.

As a method for full-coloring an organic EL display device using such an organic EL element, for example, (1) organic EL elements that emit light in red (R), green (G), and blue (B) are used as pixels. And (2) a method of selecting a light emission color in each pixel by combining a white light emitting organic EL element and a color filter.

Recently, in these methods, methods for improving the chromaticity of light emission and light emission efficiency by the microcavity effect have been proposed. The above proposal is referred to, for example, in Patent Document 1 and Patent Document 2 below.

The microcavity effect is a phenomenon in which emitted light undergoes multiple reflections between an anode and a cathode and resonates, resulting in a steep emission spectrum and amplification of emission intensity at a peak wavelength.

The microcavity effect can be obtained, for example, by optimally designing the reflectance and film thickness of the anode and cathode, the layer thickness of the organic layer, and the like.

As a method of introducing such a resonance structure, that is, a microcavity structure into an organic EL element, for example, a method of changing the optical path length of the organic EL element in each pixel for each emission color is known.

As a method of changing the optical path length of the organic EL element in each pixel for each emission color, a method of laminating an organic EL layer including a light emitting layer and a transparent electrode layer between a reflective electrode and a semitransparent electrode can be mentioned.

That is, for example, in the case of a top emission type organic EL element, the anode has a laminated structure of a reflective electrode layer and a transparent electrode layer, and the thickness of the transparent electrode layer on the reflective electrode layer of the anode is changed for each pixel. Is mentioned.

In the case of a top emission type organic EL element, the anode has a laminated structure of a reflective electrode layer and a transparent electrode layer as described above, and after the organic EL layer is appropriately laminated, the cathode is made into a thin film, for example, as a semitransparent electrode. By using translucent silver or the like, a microcavity structure can be introduced into the organic EL element.

When the microcavity structure is introduced into the organic EL element in this way, the spectrum of light emitted from the light emitting layer and emitted through the cathode becomes steeper than when the organic EL element does not have the microcavity structure. The injection strength to the front is greatly increased.

Furthermore, Patent Document 1 discloses that when light having a peak wavelength of light emitted from a light emitting element is irradiated on the resonance structure from the outside, the light is hardly reflected.

That is, by introducing the microcavity structure, it is possible to suppress the outside light reflected by the reflective electrode from being emitted to the outside, and to prevent the contrast ratio from being lowered.

Japanese Patent Publication “Japanese Patent Laid-Open No. 2007-280677 (published on Oct. 25, 2007)” Japanese Patent Publication “Japanese Patent Laid-Open No. 2005-116516 (published April 28, 2005)”

However, the organic EL display device having the conventional structure that prevents the reflection of external light by the microcavity structure has a problem that the aperture ratio is lowered as described below.

FIG. 15A includes a reflective electrode 21, a counter electrode 23 provided to face the reflective electrode 21, and an organic EL layer 22 between the electrodes. It is the schematic of the conventional organic electroluminescence display 100 designed to have.

Since the periphery of the reflective electrode 21 is covered with an edge cover 25 that is an insulating portion, an electric field is not formed on the portion of the organic EL layer 22 that is above the edge cover 25 that covers the reflective electrode 21. Does not emit light.

Therefore, the provision of the edge cover 25 defines the light emitting unit 30 that is a portion from which light can be extracted from the organic EL layer 22.

Here, as described above, by having the microcavity structure, emission of external light reflected by the reflective electrode 21 to the outside is suppressed.

However, the distance between the electrodes where the edge cover 25 is provided, that is, the optical path length 72 </ b> B is longer than the optical path length 72 </ b> A in the light emitting unit 30. Since the microcavity structure is applied to the design of the optical path length 72 </ b> A in the light emitting unit 30, the external light incident on the portion of the reflective electrode 21 where the edge cover 25 is provided is reflected and emitted to the outside. Thereby, the contrast ratio of the display is lowered.

For this reason, a color filter 51 (hereinafter referred to as CF) on the sealing substrate 50 is used so that external light does not enter the portion of the reflective electrode 21 where the edge cover 25 is provided and light does not exit from this portion. Between them, a black matrix 52 (hereinafter referred to as BM) which is a shielding part is provided.

However, there is a possibility that positional deviation occurs between the BM and the light emitting part defined by the insulating part at the time of bonding. For this reason, the BM is designed including the bonding margin 103 in consideration of the margin for the positional deviation. As a result, the opening of the BM is smaller than the light emitting part.

Therefore, although the light emitting unit 30 is defined by the end of the edge cover 25, the display area 101 (opening) as a display device is defined by the BM 52. In other words, light emission at the bonding margin 103 does not contribute to display. This causes a decrease in the aperture ratio of the display device and a decrease in light utilization efficiency.

Note that the decrease in the aperture ratio also causes a problem even in a configuration in which the color filter is not provided on the sealing substrate and only the BM is provided.

(Patent Document 1)
In the display device of Patent Document 1 shown in FIG. 16, the insulating portion is not provided in the reflective electrode, and the light emitting portion is defined by the region where the reflective electrode is provided.

In the above configuration, for the purpose of enhancing the directivity of the light beam emitted to the outside, the opening is defined by BM so that the light reflected by the edge of the reflective electrode is not emitted. Therefore, also in the above configuration, the aperture ratio as a display device is lowered.

The present invention has been made in view of the above-described conventional problems, and an object of the present invention is to provide a display device that suppresses unnecessary reflection of outside incident light and improves light utilization efficiency.

Another object of the present invention is to provide a display device capable of designing a BM opening larger than a conventional display device.

Another object of the present invention is to provide a method for performing low reflection treatment on at least a part of the periphery of the reflective electrode in order to manufacture the display device as described above.

In order to solve the above-described problems, the display device of the present invention includes:
A display device comprising: a reflective electrode provided for each pixel; a counter electrode provided to face the reflective electrode; and a light control layer sandwiched between the reflective electrode and the counter electrode. A low reflection region is provided at least at a part of the periphery of the reflection electrode.

With the above configuration, at least a part of the periphery of the reflective electrode has a structure that is difficult to reflect.

As a result, when external light is incident on the low reflection region provided in the display device, it is prevented from being reflected and emitted to the outside of the display device, and a reduction in display contrast ratio is suppressed. Can do.

In addition, in order to solve the above-described problems, a method for manufacturing a display device of the present invention includes:
A method of manufacturing a display device, comprising: a reflective electrode provided for each pixel; a counter electrode provided to face the reflective electrode; and a light control layer sandwiched between the reflective electrode and the counter electrode The low-reflection region is provided in at least a part of the periphery of the reflective electrode by performing a low-reflection treatment on at least a part of the reflective electrode.

With the above configuration, it is possible to manufacture a display device including a reflective electrode in which at least a part of the periphery has a structure that is difficult to reflect.

Thereby, when external light is incident on the low reflection region, it is possible to manufacture a display device that suppresses reflection and emission to the outside and suppresses a reduction in display contrast ratio.

According to the present invention, the reflection electrode has a low reflection region, and it is possible to suppress the outside light from being reflected by the reflection electrode and emitted to the outside, thereby suppressing the decrease in the contrast ratio of the display.

Further, it is not necessary to provide an excessive light shielding means in order to suppress the emission of reflected light. Thereby, the effect that the utilization efficiency of light can be improved is produced.

Also, according to the present invention, there is an effect that at least a part of the periphery of the reflective electrode can be subjected to a low reflection process by a simple method.

It is sectional drawing of the organic electroluminescent display panel of this invention. It is a top view which shows the structure of the principal part of the organic electroluminescence display of this invention. FIG. 3 is a sectional view taken along line AA in FIG. 2. It is sectional drawing of an organic electroluminescence display provided with a colored light emitting layer. It is a schematic diagram which shows the image display method of the organic electroluminescent display apparatus of this invention. It is a schematic diagram which shows the behavior of the external light which injected into the organic electroluminescent display apparatus of this invention. (A) is sectional drawing of the organic electroluminescence display of Example 1 of this invention, (b) is a top view. (A) is sectional drawing of the other organic electroluminescent display apparatus of Example 1 of this invention, (b) is a top view. (A) is sectional drawing of the organic electroluminescent display apparatus of Example 2 of this invention, (b) is a top view. (A) is sectional drawing of the other organic electroluminescent display apparatus of Example 2 of this invention, (b) is a top view. (A) is sectional drawing of the organic electroluminescent display apparatus of Example 3 of this invention, (b) is a top view. It is a flowchart which shows an example of the manufacturing process of the organic electroluminescent display apparatus of this invention in process order. It is the top view and sectional drawing which show an example of the manufacturing method of the reflective electrode of the manufacturing method example 1 of this invention to process order. It is the top view and sectional drawing which show an example of the preparation methods of the reflective electrode of the manufacturing method example 2 of this invention to process order. (A) is sectional drawing of the conventional display apparatus, (b) is a top view. It is sectional drawing of the conventional display apparatus.

An embodiment of the present invention will be described below with reference to FIGS.

In the following description, an organic EL display device will be described as an example of the display device.

<Organic EL display device>
A schematic configuration of the organic EL display element will be described with reference to FIG.

FIG. 1 is a cross-sectional view showing a schematic configuration of an organic EL display panel 1 provided in the organic EL display device 100 of the present embodiment.

The organic EL display device 100 according to the present embodiment includes an organic EL display panel 1 (display panel) as a display unit.

The organic EL display panel 1 includes an organic EL element 20, a sealing resin layer 41, a filling resin layer 42, and a color filter (hereinafter, referred to as “film formation substrate, TFT (Thin Film Transistor: Thin Film Transistor) substrate)” on a support substrate 10. CF) 51 and sealing substrate 50 are provided in this order.

The support substrate 10 is provided with electrodes to be described later, and the support substrate 10 functions as an electrode substrate. On the other hand, the sealing substrate 50 is provided to face the support substrate 10 with the organic EL element 20 interposed therebetween, and functions as a counter substrate.

The organic EL element 20 is connected to a TFT (not shown). This TFT functions as a switching element of the organic EL element 20.

On the organic EL element 20, a filling resin layer 42 having adhesiveness containing a desiccant is formed. The filling resin constituting the filling resin layer 42 is filled in a space surrounded by the support substrate 10, the sealing substrate 50, and the sealing resin layer 41.

In the organic EL display panel 1, the organic EL element 20 is sealed between the support substrate 10 and the sealing substrate 50 as described above, thereby preventing oxygen and moisture from entering the organic EL element 20 from the outside. Has been.

As shown in FIG. 1, among the surfaces of the sealing substrate 50, the surface facing the support substrate 10 is provided with CF 51. The organic EL display device of the present embodiment is a top emission type that emits light from the sealing substrate 50 side.

Note that the CF51 is not essential. For example, the organic EL element 20 itself can be configured to color red, green, blue, etc., and the CF can be omitted.

Further, in order to further improve the sealing performance of the organic EL element 20, an inorganic film (not shown), a mixed organic / inorganic laminated film, or the like may be laminated on the organic EL element 20.

Furthermore, the sealing resin layer 41, the sealing substrate 50, and the filling resin layer 42 can be omitted if the sealing performance of the organic EL element 20 is sufficient only with an inorganic film or an organic / inorganic mixed laminated film.

Instead of filling the space surrounded by the support substrate 10, the sealing substrate 50, and the sealing resin layer 41 with the sealing resin, a hollow structure in which an inert gas is sealed in the space may be used. In addition, it may have a structure in which a desiccant is applied or pasted in the hollow structure. However, when light is emitted from the sealing substrate 50 side, it is necessary to prevent light from being blocked by the desiccant.

<Display area>
Next, the display area in the organic EL display device 100 will be described with reference to FIG.

FIG. 2 is a plan view showing a configuration of a main part of the organic EL display device 100.

The organic EL display device 100 includes a plurality of pixels 70 on which organic EL elements are formed.

The pixel 70 includes a pixel 70R that displays red, a pixel 70G that displays green, and a pixel 70B that displays blue. Further, a pixel that displays a color different from the red, green, and blue colors such as yellow can be added to the pixel 70.

In the organic EL display device 100 of the present embodiment, each pixel 70 has a display area 101 and a non-display area 102.

The display area 101 is an area that contributes to image display by emitting light from the organic EL layer 22 that is a light control layer in plan view. On the other hand, the non-display area 102 is an area that emits less light than the display area 101 and does not contribute to display.

More specifically, the display area 101 is an area in the light emitting unit 30 in a plan view. Here, the light emitting unit 30 refers to a region where the reflective electrode 21 is provided and the edge cover 25 is not provided. This will be described later with reference to FIG.

Further, the organic EL display device 100 is provided with a plurality of signal lines 11 (wirings) in the X-axis direction and the Y-axis direction corresponding to the respective pixels. Each of the wirings is connected to the TFT.

<Sealing substrate 50>
Next, based on FIG. 3, the cross-sectional configuration of the organic EL display panel 1 will be described.

FIG. 3 is a cross-sectional view showing a schematic configuration of the organic EL display panel 1 when the organic EL display panel 1 is cut along line AA shown in FIG.

As shown in FIG. 3, the sealing substrate 50 is provided so as to seal the organic EL element 20 and the filling resin layer 42.

As a material for forming the sealing substrate 50, for example, glass or plastic can be used.

As shown in FIG. 3, the surface of the sealing substrate 50 is provided with a CF 51 and a black matrix (hereinafter referred to as BM) 52 as a shielding part.

CF51 is a colored layer that transmits a specific wavelength of light emitted from the organic EL layer 22 described later.

The BM 52 is provided between the CFs 51 to prevent light from entering between the CFs 51 from the outside and light leakage from between the CFs 51.

In the sealing substrate 50 of the organic EL display device 100 according to the present embodiment, CF51R that transmits red (R) corresponding to each pixel 70, specifically, red (R) corresponding to the pixel 70R that displays red, and green are provided. A CF 51G that transmits green (G) corresponding to the pixel 70G to be displayed or a CF 51B that transmits blue (B) corresponding to the pixel 70B that displays blue is provided.

Therefore, even when the organic EL element of each pixel 70 emits white light, color display is possible.

As will be described later, depending on the configuration of the light emitting element, a configuration without using the CF 51 is also possible. That is, when the organic EL element of each pixel 70 develops a desired color such as red, green, and blue by itself, the CF 51 can be omitted.

It is also possible to combine a light emitting element that develops a desired color and CF. With this configuration, it becomes easy to perform display with high color purity.

<Supporting substrate 10>
The support substrate 10 is provided so as to face the sealing substrate 50 so as to sandwich the organic EL element 20 or the like that is a light control layer between the supporting substrate 10 and the sealing substrate 50.

As a material for forming the support substrate 10, for example, glass or plastic can be used.

Note that an opaque metal plate or the like may be used as the support substrate 10 used in the top emission type organic EL display device 100 that emits light from the sealing substrate 50 side.

As shown in FIGS. 2 and 3, the signal line 11 and the TFT 12 are provided on the support substrate 10 corresponding to each pixel 70.

Furthermore, an interlayer film 13 (a planarizing film) is laminated on the support substrate 10 over the entire region of the support substrate 10 so as to cover the signal lines 11 and the TFTs 12.

The signal line 11 includes, for example, a plurality of lines for selecting pixels (gate lines), a plurality of lines for writing data (source lines), a plurality of lines for supplying power to the organic EL elements 20 (power supply lines), and the like. ing.

The signal line is connected to an external circuit (not shown) outside the display area 101. By inputting an electric signal to the signal line 11 from the external circuit, the organic EL element arranged at the signal line intersection can be driven (emitted). In other words, a control signal is sent to the reflective electrode 21 of each pixel 70 via the signal line 11 and the TFT 12, and the organic EL element emits light.

In the case of an active matrix display device, at least one TFT 12 is disposed in each pixel 70.

Further, each pixel 70 may be formed with a capacitor for holding the written voltage and a compensation circuit for compensating for variations in characteristics of the TFT 12.

As the interlayer film 13, a known photosensitive resin can be used. As the photosensitive resin, for example, an acrylic resin or a polyimide resin can be used.

The interlayer film 13 is provided with a contact hole 26 for electrically connecting the reflective electrode 21 provided in the organic EL element 20 to the TFT 12.

<Organic EL element 20>
The organic EL element 20 is a light emitting element capable of high luminance light emission by low voltage direct current drive.

As shown in FIG. 3, a reflective electrode 21, an organic EL layer 22, and a counter electrode 23 are stacked on the interlayer film 13 in this order.

Furthermore, the periphery of the reflective electrode 21 is covered with an edge cover 25 that is an insulating portion.

Preferably, the periphery of two adjacent reflective electrodes 21 is covered with an edge cover 25.

The organic EL layer 22 and the counter electrode 23 are provided above the reflective electrode 21 or the edge cover 25.

The reflective electrode 21 is connected to the TFT 12 through a contact hole 26 provided in the support substrate 10.

A metal material can be used as the reflective electrode 21. More specifically, for example, Ag or an Ag alloy, Al or an Al alloy, or the like can be used.

Further, it is desirable to use a translucent electrode as the counter electrode 23. As the translucent electrode, for example, a metal translucent electrode alone or a laminate of a metal translucent electrode layer and a transparent electrode layer can be used.

The reflective electrode 21 is a layer having a function of injecting (supplying) holes into the organic EL layer 22. The counter electrode 23 is a layer having a function of injecting (supplying) electrons into the organic EL layer 22.

In plan view, a region where the reflective electrode 21 is provided and the edge cover 25 is not provided is defined as the light emitting unit 30. The light emitting unit 30 is a region where light can be extracted from the light emitting layer 24. That is, the edge cover 25 defines the area of the light emitting unit 30.

The edge cover 25 is made of an insulating material, and the organic EL layer 22 becomes thin or the electric field concentration occurs at the end of the reflective electrode 21, so that the reflective electrode 21 and the counter electrode 23 in the organic EL element 20 are connected. Prevent short circuit.

As the material of the edge cover 25, a known photosensitive resin can be used. As the photosensitive resin, for example, an acrylic resin or a polyimide resin can be used.

The reflective electrode 21 of the organic EL display device 100 according to the present embodiment includes a reflective region 211 and a low reflective region 212, and the low reflective region 212 is provided on at least a part of the periphery of the reflective electrode 21. .

Here, the low reflection region 212 is a region having a lower light reflectance than the reflection region 211. As the low reflection region 212, for example, a material having a color close to black as compared with the reflection region 211 can be used.

Further, the low reflection region 212 can be provided by performing a low reflection treatment on the reflective electrode 21. Specifically, when the reflective electrode 21 is a metal, it is possible to use the reflective electrode 21 that has been subjected to a low-reflection treatment by oxidizing it with a UV irradiation treatment, an oxygen plasma treatment, or the like. More specifically, when the reflective electrode 21 is composed of silver or a silver alloy, the low reflective region 212 can be composed of silver oxide.

<Organic EL layer 22>
The organic EL layer 22 includes a light emitting layer 24 that functions as a light control layer, and a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer (not shown).

The organic EL display device 100 shown in FIG. 3 includes a light emitting element that emits white light as the light emitting layer 24, and is provided continuously to the plurality of pixels 70, that is, the entire pixel portion.

As shown in FIG. 4, a light emitting element that emits light of a desired color can be used for the light emitting layer 24. For example, a light emitting layer 24R formed of a light emitting element emitting red light, a light emitting layer 24G formed of a light emitting element emitting green light, and a light emitting layer 24B formed of a light emitting element emitting blue light can be used. In this case, as described above, color display can be performed without providing a CF.

Further, as described above, even when the light emitting layer 24 is configured to emit light of red, green, blue, etc., it is possible to use CF in combination.

With each configuration described above, the pixels 70R, 70G, and 70B that emit a desired color can be formed in each pixel 70.

<Details of the organic EL layer 22>
Hereinafter, the configuration of the organic EL layer 22 will be described in more detail.

The organic EL layer 22 includes, for example, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer between the reflective electrode 21 and the counter electrode 23 from the reflective electrode 21 side. It has the structure formed in order.

It should be noted that a carrier blocking layer for blocking the flow of carriers such as holes and electrons may be inserted as necessary.

In addition, one layer may have a plurality of functions, and for example, a single layer serving as a hole injection layer and a hole transport layer may be formed.

Note that the stacking order is that in which the reflective electrode 21 is an anode and the counter electrode 23 is a cathode. When the reflective electrode 21 is a cathode and the counter electrode 23 is an anode, the stacking order of the organic EL layers 22 is reversed.

The hole injection layer is a layer having a function of increasing the efficiency of hole injection from the reflective electrode 21 to the organic EL layer 22. The hole transport layer is a layer having a function of increasing the hole transport efficiency to the light emitting layer. The hole injection layer and the hole transport layer are uniformly formed so as to cover the reflective electrode 21 and the edge cover 25.

On the hole transport layer, a light emitting layer 24 is formed for each pixel light emitting region.

The light emitting layer 24 is a layer having a function of emitting light by recombining holes injected from the reflective electrode 21 side and electrons injected from the counter electrode 23 side. Each of the light emitting layers 24 is formed of a material having high light emission efficiency, such as a low molecular fluorescent dye or a metal complex.

The electron transport layer is a layer having a function of increasing the efficiency of transporting electrons to the light emitting layer 24. The electron injection layer is a layer having a function of increasing the efficiency of electron injection from the counter electrode 23 to the organic EL layer 22.

The electron transport layer is uniformly formed on the light emitting layer 24 and the hole transport layer so as to cover the light emitting layer 24 and the hole transport layer.

Moreover, the electron injection layer is uniformly formed on the electron transport layer so as to cover the electron transport layer.

The electron transport layer and the electron injection layer may be formed as independent layers as described above, or may be integrated with each other. That is, the organic EL display panel 1 may include an electron transport layer / electron injection layer instead of the electron transport layer and the electron injection layer.

The reflective electrode 21 is a layer having a function of injecting electrons into the organic EL layer 22 composed of the organic layer as described above. The reflective electrode 21 is uniformly formed on the electron injection layer so as to cover the electron injection layer.

Note that the organic layers other than the light emitting layer 24 are not essential layers as the organic EL layer 22, and may be appropriately formed according to the required characteristics of the organic EL element.

Also, a carrier blocking layer can be added to the organic EL layer 22 as necessary. For example, by adding a hole blocking layer as a carrier blocking layer between the light emitting layer 24 and the electron transporting layer, it is possible to prevent holes from escaping to the electron transporting layer and improve the light emission efficiency.

In the above configuration, layers other than the reflective electrode 21 (anode), the counter electrode 23 (cathode), and the light emitting layer 24 may be inserted as appropriate.

As an example of the laminated structure, an example of the laminated structure of the organic EL layer 22 in the case where the light emitting color 24 of white (W) and the CF 51 are used is as follows. That is, from the reflective electrode 21 side, a hole injection layer, a hole transport layer, a first light emitting layer, an electron transport layer, a carrier generation layer, a hole transport layer, a second light emitting layer, an electron transport layer, an electron injection layer, etc. The laminated structure of these is mentioned.

In this case, a mixture of light emitted from the first light emitting layer and the second light emitting layer is obtained from the organic EL element 20. By making the light emitting layer into two layers as described above, it is possible to improve the light emission efficiency and the amount of emitted light. Further, light having a desired spectrum can be extracted outside by adjusting the light with the CF 51.

Here, the carrier generation layer is a layer for supplying electrons to the first light emitting layer side and holes to the second light emitting layer side. That is, assuming that the hole transport layer, the light-emitting layer, and the electron transport layer are one unit, the unit on the first light-emitting layer side and the unit on the second light-emitting layer side are connected via the carrier generation layer. .

It should be noted that units having the third light emitting layer may be laminated in the same manner, or four or more units may be laminated. Furthermore, as described above, addition of a carrier block king layer and integration of a hole injection layer and a hole transport layer can be appropriately performed.

In an element in which the W emission layer 24 and the CF 51 are combined, the emission color of each pixel 70 is changed by the CF 51 or other methods, so it is not necessary to coat the emission layer 24 for each pixel 70, and the hole transport layer. Similarly to the above, it may be formed uniformly in the organic EL layer 22 in plan view.

The reflective electrode 21 is formed in a pattern corresponding to each pixel 70 by photolithography and etching after an electrode material is formed by sputtering or the like.

As the counter electrode 23, various conductive materials can be used. In the case of the top emission type organic EL element 20 that emits light from the side opposite to the support substrate 10, the counter electrode 23 is transparent or semi-transparent. It is preferably transparent.

Examples of the conductive film material used for the counter electrode 23 include transparent conductive materials such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), and gallium-doped zinc oxide (GZO). A material, a metal material such as gold (Au), nickel (Ni), platinum (Pt), or a laminated film thereof can be used.

Further, as the above and the method of laminating the counter electrode 23, a sputtering method, a vacuum deposition method, a CVD (chemical vapor deposition) method, a plasma CVD method, a printing method, or the like can be used.

As a material of the organic EL layer 22, a known material can be used. Note that a single material may be used for each of the light emitting layers 24, or a mixed material in which a certain material is used as a host material and another material is mixed as a guest material or a dopant may be used.

As a material of the hole injection layer, the hole transport layer, or the hole injection layer / hole transport layer, for example, anthracene, azatriphenylene, fluorenone, hydrazone, stilbene, triphenylene, benzine, styrylamine, triphenylamine, porphyrin, Chain or heterocyclic such as triazole, imidazole, oxadiazole, oxazole, polyarylalkane, phenylenediamine, arylamine, and derivatives thereof, thiophene compounds, polysilane compounds, vinylcarbazole compounds, aniline compounds Examples include conjugated monomers, oligomers, and polymers.

As the material of the light emitting layer 24, a material having high luminous efficiency such as a low molecular fluorescent dye or a metal complex is used. For example, anthracene, naphthalene, indene, phenanthrene, pyrene, naphthacene, triphenylene, perylene, picene, fluoranthene, acephenanthrylene, pentaphen, pentacene, coronene, butadiene, coumarin, acridine, stilbene, and derivatives thereof, tris (8- Quinolinolato) aluminum complex, bis (benzoquinolinolato) beryllium complex, tri (dibenzoylmethyl) phenanthroline europium complex, ditoluylvinylbiphenyl, hydroxyphenyloxazole, hydroxyphenylthiazole and the like.

Examples of the material for the electron transport layer, the electron injection layer, or the electron transport layer / electron injection layer include tris (8-quinolinolato) aluminum complex, oxadiazole derivative, triazole derivative, phenylquinoxaline derivative, silole derivative, and the like. .

<Microcavity>
FIG. 5 is a schematic diagram for explaining an image display method of the organic EL display device 100 according to the present embodiment.

The organic EL element 20 according to this embodiment preferably has a microcavity structure.

The microcavity is a phenomenon in which emitted light undergoes multiple reflections between the anode and the cathode and resonates, resulting in a steep emission spectrum and amplification of the emission intensity at the peak wavelength.

The microcavity effect can be obtained, for example, by optimally designing the reflectance and film thickness of the anode and cathode, the film thickness of the organic EL layer 22, and the like.

In the organic EL element 20 having the microcavity structure, light emitted from the light emitting layer in the organic EL layer 22 provided between the reflective electrode 21 and the counter electrode 23 is between the reflective electrode 21 and the counter electrode 23. Repeat reflection.

At this time, as shown in FIG. 5, the light emitted from the light emitting layer 24 is reflected by changing the optical path lengths 72R, 72G, 72B of the organic EL elements 20 in the respective pixels 70R, 70G, 70B for each emission color. It reciprocates between the electrode 21 and the counter electrode 23, and the intensity | strength of the light of a specific wavelength is amplified.

In the present embodiment, the transparent electrode layer 121 is provided on the reflective electrode 21, and the optical path lengths 72R and 72G of the organic EL elements 20 in the respective pixels 70R, 70G, and 70B are changed by changing the film thickness of the transparent electrode layer 121.・ 72B is changed.

Thus, by changing the film thickness of the transparent electrode layer 121 in each of the pixels 70R, 70G, and 70B, the microcavity effect can be changed and the emission color can be adjusted.

FIG. 6 is a schematic diagram for explaining the behavior of external light incident on the organic EL display device 100 according to the present embodiment.

Hereinafter, the behavior of external light incident on the organic EL element 20 having a microcavity structure will be described.

In the organic EL element 20 having the microcavity structure, the optical path length between the electrodes is designed so that the resonance wavelength thereof matches the wavelength that transmits the CF 51. Thereby, the light of the wavelength component contained in the incident external light is confined between the electrodes and is not emitted outside. On the other hand, light other than the wavelength component is cut by the CF 51.

Specifically, for example, the CF 51G transmits green light of external light and absorbs light of other wavelengths. Therefore, green light of the external light reaches the organic EL element 20.

However, the microcavity structure of the organic EL element 20 transmits green light remarkably and hardly reflects it. For this reason, green light resulting from external light hardly proceeds from the organic EL element 20 to the CF 51G.

As described above, even when external light is incident on the organic EL display device 100, it is possible to suppress light of any wavelength from being reflected by the reflective electrode 21 and being emitted to the outside.

Hereinafter, the positional relationship among the low reflection region 212, the BM 52, and the light emitting unit 30 of the reflective electrode 21 will be described in detail with specific examples.

In the organic EL display device 100 of the present embodiment, a low reflection region is provided around the reflective electrode 21. Therefore, it becomes easy to widen the BM opening 53 of the BM 52 provided on the support substrate 10 as the counter substrate.

Hereinafter, description will be made based on specific examples.

<Example 1>
FIG. 7 is a schematic diagram of the organic EL display device 100 of the present embodiment.

For the sake of explanation, the member numbers are omitted for the configuration of each part already described. For the sake of explanation, the BM opening 53 and the light emitting unit 30 are indicated by auxiliary lines.

7A and 7B, in the organic EL display device 100 of the present embodiment, the light emitting unit 30 is inside the BM opening 53. That is, since the display area 101 is defined by the light emitting unit 30, the display area 101 is the same as the light emitting unit 30.

Thereby, the light extracted by the light emitting unit 30 can contribute to display efficiently.

That is, as shown in FIG. 15B, which is a plan view of a conventional display device, the BM opening 53 is conventionally positioned inside the light emitting unit 30. For this reason, it is difficult to emit all the light emitted from the light emitting unit 30, and the light use efficiency is reduced.

In contrast, in this embodiment, a low reflection region 212 is provided around the reflective electrode 21.

Therefore, it is less necessary to design the BM opening 53 in consideration of a bonding margin between the support substrate 10 and the sealing substrate 50 and the like. As a result, the BM opening 53 can be made larger than the light emitting unit 30.

Therefore, as described above, in this embodiment, the light use efficiency is improved.

Moreover, since the external light which entered into the area | region which is the BM opening 53 and is not the light emission part 30 injects into the low reflection area 212 of the reflective electrode 21, reflection is suppressed.

Furthermore, the external light incident on the light emitting unit 30 is incident on the reflection region 211 and reflected, and is suppressed from being emitted to the outside due to the microcavity effect of the organic EL element 20.

Thereby, it is suppressed that external light enters the organic EL display device 100, is reflected inside, and is emitted outside.

Therefore, display with a high contrast ratio can be performed even when the external light intensity is particularly high.

<Modification>
Further, as a modification of the present embodiment, the configuration shown in FIGS. 8A and 8B can be considered.

The above configuration is different from the configuration of the second embodiment described above in that the low reflection region 212 is formed over a portion where the edge cover 25 is not provided. That is, the low reflection region 212 is provided in a region corresponding to the end portion vicinity of the edge cover 25 in plan view.

Therefore, the reflected light from the end portion vicinity described above is reduced. As a result, it becomes easy to obtain a high contrast ratio.

<Example 2>
FIG. 9 is a schematic view of the organic EL display device 100 of the present embodiment.

For the sake of explanation, the member numbers are omitted for the configuration of each part already described. For the sake of explanation, the BM opening 53 and the light emitting unit 30 are indicated by auxiliary lines.

FIG. 9A is a cross-sectional view showing a schematic configuration of the organic EL display panel 1, and FIG. 9B is a plan view showing a schematic configuration of the organic EL display panel 1.

As shown in FIGS. 9A and 9B, in the organic EL display device 100 according to the present embodiment, the BM opening 53 and the light emitting unit 30 have the same width. That is, when there is no positional shift, the display region 101 is the same region as the BM opening 53 and the light emitting unit 30 in plan view.

Thereby, the light emitted from the light emitting unit 30 can efficiently contribute to the display without being blocked by the BM 52.

In the organic EL display panel 1 of the present embodiment, the end portion of the edge cover 25 is easily covered with the BM 52 in plan view.

Here, in the vicinity of the end portion of the edge cover 25, the thickness of each laminated layer may be uneven or may differ from a desired thickness. When the thickness of each layer is as described above, it is difficult to obtain the microcavity effect. For this reason, incident external light may be reflected and emitted, resulting in a decrease in contrast ratio.

Here, in this embodiment, the BM opening 53 is narrowed to a width that does not easily reduce the light efficiency, that is, the width of the light emitting section 30.

Therefore, it is easy to perform display with high light utilization efficiency while suppressing the emission of reflected light near the edge of the edge cover 25 and obtaining a high contrast ratio.

<Modification>
Further, as a modification of the present embodiment, the configurations shown in FIGS. 10A and 10B can be considered.

The above configuration is different from the configuration of the second embodiment described above in that the low reflection region 212 is formed over a portion where the edge cover 25 is not provided. That is, the low reflection region 212 is provided in a region corresponding to the end portion vicinity of the edge cover 25 in plan view.

Therefore, the reflected light from the end portion vicinity described above is reduced. As a result, it becomes easy to obtain a high contrast ratio.

<Example 3>
FIG. 11 is a schematic diagram of the organic EL display device 100 of the present embodiment.

As shown in FIGS. 11A and 11B, the organic EL display device 100 according to the present embodiment includes a display area 101 of each pixel 70 and a non-display area 102 in which the reflective electrode 21 is continuous in the plan view. And formed. The reflective electrode 21 in the non-display area 102 in the plan view is a low reflection area 212.

Such a configuration makes it easier to make the BM opening 53 wider or to omit the BM 52.

〔Production method〕
A method for manufacturing the display device according to the present embodiment will be described below with reference to FIGS.

However, the dimensions, materials, shapes, and the like of the constituent elements described in this embodiment are merely one embodiment, and the scope of the present invention should not be construed as being limited thereto.

First, with reference to FIG. 12, an outline of the flow of the manufacturing process of the organic EL display device 100 will be described.

FIG. 12 is a flowchart illustrating an example of a manufacturing process of the organic EL display device 100 in the order of processes.

Note that the steps S1, S4 to S7 can be performed by a known method, so the description will be simplified.

In step S1, the TFT 12, the signal line 11, the interlayer film 13, and the contact hole 26 are formed on the support substrate 10 by a known method.

As the support substrate 10, a glass substrate such as a non-alkali glass substrate or a plastic substrate can be used.

In step S2, the reflective electrode 21 is prepared for each of the pixels 70R, 70G, and 70B. As a method for laminating the reflective electrode 21, a sputtering method, a vacuum vapor deposition method, a CVD (chemical vapor deposition) method, a plasma CVD method, a printing method, or the like can be used.

Other details will be described in the following examples.

In step S3, the edge cover 25 is manufactured so that the end portion (pattern end portion) of the reflective electrode 21 is covered on the interlayer film 13 and the light emitting portion 30 is formed for each of the pixels 70R, 70G, and 70B.

A known photosensitive resin can be used for the edge cover 25. Examples of the photosensitive resin include acrylic resin and polyimide resin.

In step S4, the organic EL layer 22 is produced so as to cover the reflective electrode 21 and the edge cover 25.

When a light emitting element that emits white light is used as the light emitting layer 24, the light emitting layer 24 is formed on the entire pixel portion.

Here, when a light emitting element that emits light is used as the light emitting layer 24 provided in the organic EL layer 22, the light emitting layer 24 is formed in a predetermined pattern on the organic EL element 20 of each pixel 70.

As a method of forming the light emitting layer 24 with the predetermined pattern, for example, a vacuum deposition method, an ink jet method, or a laser transfer method can be used.

Note that a single material may be used for each of the light emitting layers 24, or a mixed material in which a certain material is used as a host material and another material is mixed as a guest material or a dopant may be used.

In step S5, the counter electrode 23 is formed on the entire surface of the organic EL layer 22 by a known method.

In step S6, the support substrate 10 on which the organic EL element 20 is formed and the sealing substrate 50 are bonded together with the sealing resin layer 41, and the organic EL element 20 is sealed.

As another method for encapsulating the organic EL element 20, for example, a dense sealing film that hardly allows moisture and oxygen to pass through is formed on the upper surface of the organic EL element 20 by a CVD (chemical vapor deposition, chemical vapor deposition) method or the like. The organic EL element 20 can be sealed by forming a frit glass (powder glass) into a frame shape.

Further, by forming an adhesive filling resin containing a desiccant on the organic EL element 20, the support substrate 10 and the sealing substrate 50 may be bonded together and the organic EL element 20 may be sealed.

In step S7, the connection terminal of the circuit part (not shown) is connected to the electric wiring terminal of the terminal part region (not shown) of the support substrate 10. In this way, the organic EL display device 100 is manufactured.

In addition to the known manufacturing process of the organic EL display device 100 described above, in the reflective electrode manufacturing process of the present invention, at least a part of the reflective electrode 21 is subjected to a low reflection treatment, and a low reflective region 212 is formed around a part of the reflective electrode 21. The process of providing is provided.

As the low reflection treatment, for example, a treatment of providing a low reflection material around the reflective electrode 21 or blackening the periphery of the reflective electrode 21 can be adopted.

Hereinafter, the reflective electrode manufacturing process including the low reflection process in Step S2 will be described with reference to examples.

<Production Method Example 1>
The process of subjecting the reflective electrode 21 of Example 1 to a low reflection process will be described with reference to FIG.

FIGS. 13A to 13F are plan views illustrating an example of a method for manufacturing the reflective electrode 21 in the organic EL display device 100 in the order of steps in plan view. FIG. 13A is a cross-sectional view of FIG. 13A taken along line AA, and the same applies to FIG.

First, a reflective electrode material 110 such as Ag is formed on a support substrate by a sputtering method or the like.

Second, as shown in FIG. 13A, a first resist pattern 120 is formed on the reflective electrode material 110 by photolithography for each color pixel.

Third, as shown in FIG. 13B, the reflective electrode material 110 is etched using the first resist pattern 120 as a mask. As the etching solution, a mixed solution of phosphoric acid, nitric acid, acetic acid, or the like can be used.

Fourth, as shown in FIG. 13C, the first resist pattern 120 is stripped and washed with a resist stripper. Thereby, the reflective electrode 21 is formed by patterning the reflective electrode material 110 so as to be separated for each color pixel.

Fifth, a second resist pattern 130 is formed by photolithography so that at least a part of the periphery of the patterned reflective electrode 21 is exposed. In the example shown in FIG. 13D, a resist pattern that is slightly smaller than the reflective electrode 21 in plan view is formed so that the entire periphery of the reflective electrode 21 is exposed.

Sixth, the exposed portion of the reflective electrode 21 is subjected to a low reflection treatment. Here, UV irradiation and oxygen plasma treatment can be performed as the low reflection treatment.

Thereby, as shown in FIG. 13E, the exposed portion of the reflective electrode 21 is reduced in the light reflectivity and becomes a low reflection region 212.

Seventh, the second resist pattern 130 is stripped and washed with a resist stripper.

By the above process, as shown in FIG. 13 (f), the reflection electrode 21 whose periphery is subjected to low reflection treatment can be manufactured.

<Production Method Example 2>
The process of subjecting the reflective electrode 21 of Example 2 to the low reflection process will be described with reference to FIG.

14A to 14E are plan views showing an example of a method for manufacturing the reflective electrode 21 in the organic EL display device 100 in the order of steps in plan view. FIG. 14A is a cross-sectional view of FIG. 14A taken along the line AA, and the same applies to FIG.

First, a reflective electrode material 110 such as Ag is formed on a support substrate by a sputtering method or the like.

Secondly, as shown in FIG. 14A, a halftone resist pattern 140 is formed on the reflective electrode material 110 by photolithography for each color pixel.

Here, the halftone resist pattern 140 refers to a resist pattern in which the height of at least a part of the periphery is lower than the height of the central portion with respect to the bottom surface.

Third, as shown in FIG. 14B, the reflective electrode material 110 is etched using the halftone resist pattern 140 as a mask. As the etching solution, a mixed solution of phosphoric acid, nitric acid, acetic acid, or the like can be used.

Fourth, as shown in FIG. 14C, a part of the halftone resist pattern 140 is removed by ashing using a dry etching apparatus. Here, the part of the halftone resist pattern 140 refers to the extent to which at least a part of the periphery of the reflective electrode 21 is exposed in a plan view by ashing the halftone resist pattern 140.

Fifth, a low reflection process is performed on the exposed portion of the reflective electrode 21. Here, UV irradiation and oxygen plasma treatment can be performed as the low reflection treatment.

As a result, as shown in FIG. 14D, the exposed portion of the reflective electrode 21 is reduced in light reflectivity and becomes a low reflection region 212.

Sixth, the remaining halftone resist pattern 140 is stripped and washed with a resist stripping solution.

By the above process, as shown in FIG. 14E, a reflective electrode 21 in which at least a part of the periphery is subjected to a low reflection treatment can be produced.

The present invention is not limited to the above-described embodiments, and various modifications are possible within the scope shown in the claims, and embodiments obtained by appropriately combining technical means disclosed in different embodiments. Is also included in the technical scope of the present invention.

The organic EL display device 100 of the present invention may be a bottom emission type that emits light from the support substrate 10 side. When the organic EL display device 100 is a bottom emission type, an opaque metal plate or the like can be used as the sealing substrate 50.

In the above description, the organic EL display device is taken as an example, but the display device of the present invention is not limited to this. For example, the present invention can be applied to other self-luminous elements and display devices that function as light valves such as liquid crystal display devices.

The display device of the present invention is
The reflective electrode is formed so as to cover a display area of each pixel and a non-display area continuous therewith in a plan view, and the low reflection area is included in the non-display area. .

With the above configuration, reflection of external light incident on the non-display area of the display device can be reduced. Thereby, since unnecessary emission of reflected light can be suppressed, a decrease in contrast ratio can be suppressed.

Also, in a plan view, the portion of the reflective electrode included in the display area can reflect light. Thereby, efficient use of light becomes possible.

Also, since the light can be multiple-reflected between the reflective electrode and the counter electrode, the microcavity effect can be easily obtained.

The display device of the present invention is
The non-display area is the low reflection area.

With the above configuration, since the entire non-display area becomes a low reflection area, the emission of unnecessary reflected light can be more reliably suppressed.

Also, the reflection region and the low reflection region can be formed corresponding to the display region and the non-display region, and the microcavity effect can be efficiently exhibited and reflection of external light can be suppressed.

The display device of the present invention is
The reflective electrode is made of metal, and the low reflection region is a region where the metal is subjected to low reflection treatment.

With the above configuration, the reflective electrode can reflect light due to its metallic luster.

Also, a low reflection region can be formed by subjecting the metal to low reflection treatment, and the manufacturing process can be simplified.

The display device of the present invention is
The reflective electrode is made of a metal, and the low reflective region is made of an oxide of the metal.

With the above configuration, a low reflection region can be formed by oxidizing at least a part of the periphery of the reflective electrode, and the manufacturing process can be simplified.

The display device of the present invention is
The reflective electrode is made of silver or a silver alloy.

With the above configuration, the reflective electrode can reflect light efficiently, so that the light use efficiency is improved. Also, the microcavity effect can be enhanced.

In particular, when silver or a silver alloy is used, it is easy to provide a low reflection region by oxidation treatment or the like.

The display device of the present invention is
An insulating part is provided between the two adjacent reflective electrodes, and the insulating part covers the end of each reflective electrode in plan view, and the end covered with the reflective electrode is covered with the insulating part. The non-display area.

With the above configuration, the light emitting part that can extract light from the light control layer can be defined by the insulating part. And the reflective electrode covered with the said insulation part can be made into a non-display area | region.

Therefore, in the reflective electrode, it is possible to reliably obtain necessary reflection and to reliably suppress unnecessary reflection.

Also, it is possible to prevent the reflective electrode and the counter electrode in the light control layer from being short-circuited due to the light control layer becoming thin or electric field concentration occurring.

The display device of the present invention is
A shielding portion corresponding to the pixel is provided on a surface side of the counter electrode that is different from the surface facing the light control layer, and the display area of the corresponding pixel in a plan view is the area of the shielding portion. It is located in the opening.

With the above configuration, light leakage from between the pixels can be prevented by the shielding part, so that the contrast can be improved.

Also, since the display area is located in the opening of the shielding part, the light from the display area can be emitted without being blocked by the shielding part. Therefore, the light use efficiency can be improved.

For example, when a circuit unit for driving the display device is provided between the pixels in plan view, the incidence of light on the circuit unit can be blocked. Thereby, problems such as deterioration of the display device caused by light entering the circuit portion can be avoided.

The display device of the present invention is
The light control layer is an organic EL layer.

With the above configuration, electrons and holes are injected from each electrode into the organic EL layer by applying a voltage between the electrodes. The electrons and holes combine with each other in the light emitting layer provided in the organic EL layer and emit light.

By using an organic EL layer as the light control layer, for example, it is possible to obtain a display device with a high response speed and a wide viewing angle as compared with a liquid crystal display device.

In order to solve the above problems, a manufacturing method of a display device of the present invention includes:
The reflective electrode is made of metal, and the low reflection treatment is at least one of a UV irradiation treatment and an oxygen plasma treatment.

With the above configuration, the metal can be subjected to a low reflection treatment by a simple method.

In addition, when the metal is, for example, silver, the silver can be easily blackened by at least one of the above treatments.

By blackening at least a part of the periphery of the reflective electrode, the part can be made a low reflection region.

Thereby, it is possible to manufacture a display device that suppresses the reduction of the contrast ratio by reflecting the incident external light.

The present invention can be used for a display device including an electrode and a light control unit and a method for manufacturing the display device.

1 Organic EL Display Panel 10 Support Substrate 11 Signal Line 12 TFT
DESCRIPTION OF SYMBOLS 13 Interlayer film 20 Organic EL element 21 Reflective electrode 22 Organic EL layer 23 Counter electrode 24 Light emitting layer 24R / 24G / 24B Light emitting layer 25 Edge cover 26 Contact hole 30 Light emitting part 41 Sealing resin layer 42 Filling resin layer 50 Sealing substrate 51 Color filter 52 Black matrix 53 BM opening 70 pixel 70R / 70G / 70B pixel 72A / 72B optical path length 72R / 72G / 72B optical path length 100 organic EL display device 101 display region 102 non-display region 103 bonding margin 110 reflective electrode material 120 First resist pattern 121 Transparent electrode layer 130 Second resist pattern 140 Halftone resist pattern 211 Reflective region 212 Low reflective region

Claims (11)

1. A display device comprising: a reflective electrode provided for each pixel; a counter electrode provided to face the reflective electrode; and a light control layer sandwiched between the reflective electrode and the counter electrode. ,
   A display device, wherein a low reflection region is provided at least at a part of the periphery of the reflection electrode.
2. The reflective electrode is formed to cover the display area of each pixel and a non-display area continuous therewith in plan view,
   The display device according to claim 1, wherein the low reflection region is included in the non-display region.
3. 3. The display device according to claim 2, wherein the non-display area is the low reflection area.
4. The reflective electrode is made of metal,
   4. The display device according to claim 1, wherein the low reflection region is a region where the metal is subjected to a low reflection process. 5.
5. The reflective electrode is made of metal,
   The display device according to claim 1, wherein the low reflection region is formed of an oxide of the metal.
6. 6. The display device according to claim 4, wherein the reflective electrode is made of silver or a silver alloy.
7. An insulating part is provided between two adjacent reflective electrodes,
   The insulating portion covers the end of each reflective electrode in plan view,
   The display device according to claim 2, wherein the end portion covered with the reflective electrode is the non-display area.
8. A shielding portion corresponding to the pixel is provided on a surface side of the counter electrode different from the surface facing the light control layer,
   4. The display device according to claim 2, wherein the display area of the corresponding pixel is located in the opening of the shielding part in a plan view.
9. The display device according to claim 1, wherein the light control layer is an organic EL layer.
10. A method of manufacturing a display device, comprising: a reflective electrode provided for each pixel; a counter electrode provided to face the reflective electrode; and a light control layer sandwiched between the reflective electrode and the counter electrode Because
    A method for manufacturing a display device, characterized in that at least a part of the reflective electrode is subjected to a low-reflection treatment so that a low-reflective region is provided in at least a part around the reflective electrode.
11. The reflective electrode is made of metal,
    The method for manufacturing a display device according to claim 10, wherein the low reflection treatment is at least one of a UV irradiation treatment and an oxygen plasma treatment.

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