WO2013041525A1 - Élément de conversion en céramique, composant optoélectronique et procédé de fabrication d'un élément de conversion en céramique - Google Patents

Élément de conversion en céramique, composant optoélectronique et procédé de fabrication d'un élément de conversion en céramique Download PDF

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Publication number
WO2013041525A1
WO2013041525A1 PCT/EP2012/068359 EP2012068359W WO2013041525A1 WO 2013041525 A1 WO2013041525 A1 WO 2013041525A1 EP 2012068359 W EP2012068359 W EP 2012068359W WO 2013041525 A1 WO2013041525 A1 WO 2013041525A1
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WO
WIPO (PCT)
Prior art keywords
conversion element
regions
wavelength range
ceramic
radiation
Prior art date
Application number
PCT/EP2012/068359
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German (de)
English (en)
Inventor
Ion Stoll
Dominik Eisert
Original Assignee
Osram Opto Semiconductors Gmbh
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Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2013041525A1 publication Critical patent/WO2013041525A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials

Definitions

  • Ceramic conversion element optoelectronic component and method for producing a ceramic
  • Object of the present invention is a
  • Specify conversion element from the converted and unconverted radiation can be coupled out improved. It should also be given an optoelectronic device having an increased efficiency. Furthermore, a method for producing such
  • Conversion element can be specified.
  • the ceramic conversion element preferably has one
  • the columnar regions may, for example, a
  • the second regions may be composed of balls.
  • the second areas may consist of one
  • columnar regions are preferably arranged parallel to each other.
  • the first areas and / or the second areas may each be interconnected.
  • Areas and / or the second areas may at least partially represent a two-dimensional or a three-dimensional network. Furthermore, it is also possible that in particular the second regions are cylindrical or formed as a cylinder.
  • Particularly preferred may be at least two different
  • columnar regions are each assigned a cylindrical envelope, wherein the envelope is not
  • the first regions are particularly preferably ceramic. At least either the first areas or the second
  • Areas are suitable for electromagnetic radiation of a first wavelength range in electromagnetic
  • At least the first regions or the second regions are particularly preferably formed wavelength-converting.
  • the second regions are further preferred in one
  • the hexagonal pattern is a hexagonal closest sphere packing. It should be noted that the second regions need not be arranged over the entire major surface of the conversion element according to a single continuous hexagonal pattern, such as according to a hexagonal closest packing. Rather, it is also possible that different portions of the main surface of the conversion element from each other
  • different subregions of the main surface have different regular hexagonal patterns whose symmetry axes are different.
  • a portion of the main surface may have a first hexagonal pattern whose axes of symmetry are opposite to a hexagonal pattern of another
  • the lattice constants of the patterns in the various subregions of the main surface are particularly preferably the same or at least very similar.
  • the lattice constants of different hexagonal patterns deviate from one another by no more than 5 -6 hexagonal pattern has certain defects due to their production.
  • the second regions are identical to one embodiment. According to one embodiment, the second regions are identical to one embodiment.
  • Regions preferably formed ceramic and wavelength converting.
  • the wavelength-converting second regions may, for example, be filled with wavelength-converting particles of a phosphor.
  • the particles are suitable for this, electromagnetic radiation of the first
  • Wavelength range into electromagnetic radiation of the third wavelength range to convert is
  • the second regions comprise a ceramic material or are formed from a ceramic material that is suitable for
  • the ceramic is formed from a plurality of materials. According to one embodiment, the ceramic
  • Conversion element substantially formed of ceramic material and further suitable, primary radiation of a first wavelength range in two different
  • conversion element offers a conversion element, in the conversion of primary radiation in two different wavelength ranges by a
  • the advantage that heat generated in operation can be very well derived. This increases the efficiency and stability of the color locus of the emitted light.
  • the first regions and / or the second regions are perpendicular to a main surface of the
  • columnar areas may be parallel
  • Conversion element are vertical.
  • the first areas and / or the second areas can each here
  • the first regions and / or the second regions may at least partially be a two-dimensional or a three-dimensional network
  • Areas / second areas an angle of about 60 ° with the main surface of the conversion element. Also in this embodiment, the value of the angle between the areas and the main surface may differ slightly from 60 ° due to the production.
  • Wavelength range enters the conversion element.
  • the main surface of the conversion element opposite the radiation entrance surface is furthermore generally considered Radiation exit surface is provided, is emitted from the converted radiation of the second and optionally the third or even further wavelength ranges and optionally primary unconverted of the first wavelength range.
  • Radiation entrance surface are arranged, has a laterally structured arrangement of first and second
  • Wavelength-converting regions as described above, the advantage that the overall brightness is increased and a better color rendering index can be achieved. Furthermore, the conversion element described here has improved light extraction compared to conventional
  • Wavelength-converting phosphor particles are introduced into a resin, as well as electrophoretically or by means
  • the first columnar regions and / or the second columnar regions penetrate the conversion element from the first main surface of the first
  • the first main surface lies opposite the second main surface.
  • the first columnar regions and the second columnar regions form a photonic crystal.
  • the photonic crystal may be for example, be a two-dimensional or a three-dimensional photonic crystal.
  • a photonic crystal equivalent to the electronic band gap of semiconductors has a band gap for photons, the so-called photonic band gap. Photons with energies within the photonic band gap can not propagate in the photonic crystal and are reflected by it. Also photonic crystals with partial
  • a photonic crystal is formed by periodic structures of materials with different refractive indices.
  • the dimension of the photonic crystal is determined by the dimension of the periodicity of the
  • a photonic crystal in two dimensions includes equivalent structures that exist in two
  • a two-dimensional photonic crystal becomes
  • first columnar portions and second columnar portions that are perpendicular to a major surface of the conversion element, wherein the
  • Ball packing are arranged.
  • the photonic crystal has a photonic bandgap that is the second and / or third
  • Wavelength range corresponds.
  • the photonic band gap preferably corresponds at least to
  • the photonic crystal is further preferably formed such that radiation having energy within the bandgap parallel to the major surface of the band gap
  • first regions and the second regions form a photonic crystal, scattering effects due to the different refractive indices of the first one may be advantageous
  • wavelength-converting ceramic material or as the material for the phosphor particles, for example, one of the following materials is suitable: (Y, Lu, Gd) 3 (Ali_
  • the ceramic conversion element is particularly suitable for use in an optoelectronic semiconductor component in conjunction with a radiation-emitting semiconductor body.
  • Semiconductor component for example, has a
  • the ceramic conversion element is particularly preferably arranged with the first main surface above the radiation exit surface of the semiconductor body.
  • the ceramic conversion element converts at least part of the radiation emitted by the semiconductor body into radiation of a second one different from the first one
  • the ceramic conversion element with its second major surface in direct contact with the
  • the conversion element is fastened on the radiation exit surface of the semiconductor body by means of a bonding layer,
  • This bonding layer may for example comprise a silicone or consist of a silicone.
  • the semiconductor body preferably emits electromagnetic radiation which comprises radiation from the ultraviolet, blue and / or green spectral range, that is to say that the first wavelength range has ultraviolet blue and / or green radiation. Particularly preferably sends the
  • the first wavelength range has blue light.
  • the conversion element is in this case particularly preferably suitable for a part of the semiconductor body
  • the second wavelength range has yellow light.
  • white mixed light arises, which consists of unconverted radiation of the first wavelength range (blue light) and converted radiation of the second
  • Wavelength range (yellow light). Furthermore, it is also possible that the conversion element is designed to blue light of the semiconductor body at least partially in green light and red light
  • Wavelength range and unconverted radiation of the first wavelength range composed.
  • the conversion element is a part of the blue emitted by the semiconductor body Converts light of the first wavelength range in yellow light of the second wavelength range and another part in red light of the third wavelength range. In this way, white mixed light, with a color spot in the warm white area of the CIE standard color chart, is created in particular
  • Conversion element suitable for converting blue light of the first wavelength range, which is emitted by the semiconductor body, in the yellow light of the second wavelength range.
  • the second regions are suitable, for example, to convert blue light of the first wavelength range, which is emitted by the semiconductor body, into red light of the third wavelength range.
  • the ultraviolet light of the semiconductor body is preferably converted as completely as possible into visible light by the ceramic conversion element in order to produce a particularly high level of light emission
  • the conversion element is a part of the ultraviolet radiation of the first
  • Wavelength range another part of the ultraviolet Radiation of the first wavelength range in green light (third wavelength range) and the remaining portion of the ultraviolet radiation in red light (fourth
  • the conversion element comprises a further
  • the ceramic conversion element can be produced, for example, by the method described below.
  • Carboxylate and n is an integer, preferably 3 or 4, is.
  • sol-gel solution is particularly preferred
  • Doping material such as cerium and / or europium added, which allows wavelength conversion in the later formed ceramic material.
  • the ceramic base material is free of one Doping material, so that the ceramic formed no
  • a polymeric surfactant such as
  • the polymeric surfactants form ordered regions in the sol-gel solution
  • the surfactants can form spherical aggregates, such as micelles or vesicles, that are within the
  • Base material to hexagonal patterns preferably to a hexagonal closest packing, order.
  • the polymeric surfactants form rod-shaped, cylindrical aggregates, which preferably arrange hexagonal.
  • the ordered aggregates later preferably form air-filled regions in the conversion element.
  • the sol-gel solution forms with the
  • polymeric surfactants an ordered liquid crystalline phase.
  • the polymeric surfactants in the sol-gel solution particularly preferably form forms which correspond to the later second regions, while the sol-gel solution surrounding the polymeric surfactants corresponds to the later first regions
  • the polymeric surfactants preferentially form columnar regions in the sol-gel solution, which are arranged in a hexagonal regular pattern in a plan view of a main surface of a sol-gel layer.
  • the sol-gel solution is now aged so that the
  • the sol-gel solution is calcined and sintered, so that from the sol-gel solution ceramic first regions and from the polymeric surfactants air-filled second regions are formed.
  • the sol-gel solution is introduced with the introduced polymeric surfactants usually such high temperatures that the polymeric surfactants are decomposed and a porous ceramic without
  • the sol-gel solution is applied before aging as a sol-gel layer on a support.
  • a carrier it is particularly preferred to use an electrically conductive support. The carrier is therefore particularly preferred
  • electrically conductive material such as a metal
  • electrically conductive layer such as one
  • the carrier is electrically conductive or provided with an electrically conductive layer.
  • the carrier serves as an electrode which is in suspension with the phosphor to be introduced.
  • the phosphor usually carries charges on its surface, so that move the phosphor particles in the direction of the electrode during application of an electric field during the electrophoresis process. In this way, it is advantageously possible to selectively introduce the phosphor into the channels of the porous ceramic material.
  • the air-filled regions particularly preferably form a continuous region within the surrounding ceramic second regions.
  • the first areas are preferred before Inserting the phosphor particles in the second areas sintered into a ceramic.
  • the thickness of the sintered ceramic layer having the first regions and the second regions is preferably between 20 ⁇ m and 400 ⁇ m inclusive.
  • the polymeric surfactants form ordered in the sol-gel solution
  • sintered conversion element are ground accordingly.
  • the crystallites of the ceramic material and / or the phosphor particles in the suspension have a diameter which is smaller than the wavelength of the visible light.
  • a diameter which is smaller than the wavelength of the visible light is particularly preferred.
  • Diameter of the crystallites and / or the phosphor particles at most 50 nm. In this way, in the
  • the present conversion element generally has a preferred direction of the columnar regions, which in
  • Substantially perpendicular to the radiation exit surface of the conversion element extends. Such structuring of the bulk material of the conversion element leads to a
  • the emission characteristic of the conversion element can be homogenized in terms of its color. Furthermore, by controlling the number of the first and second regions with advantage the color locus of the ceramic
  • Conversion element emitted light are particularly easy to customize. This can advantageously be dispensed with a change in the chemical composition of the ceramic converter, which has a simplified process management result.
  • Optoelectronic device and the method can be used. Furthermore, embodiments that are described only in connection with the method, use in the conversion element and in the
  • Semiconductor device are described, are formed in the method and the conversion element.
  • FIG. 1 shows a schematic sectional view of a ceramic conversion element according to a first embodiment.
  • FIGS. 3 and 4A each show a schematic
  • FIG. 4B shows a schematic sectional illustration of an optoelectronic component according to one exemplary embodiment.
  • Figures 5 to 10 show schematic representations by means of which an embodiment of a method for producing a ceramic conversion element will be described.
  • the ceramic conversion element 1 according to the
  • Embodiment of Figure 1 has a plurality of first columnar regions 2 and a plurality of second
  • the first regions 2 are ceramic and are suitable for converting electromagnetic radiation of a first wavelength range, which preferably comprises blue light, into electromagnetic radiation of a second, different wavelength range from the first.
  • the second wavelength range preferably has yellow light.
  • the second regions 3 are filled with air in the conversion element according to FIG.
  • the first regions 2 and the second regions 3 are perpendicular to one in the present embodiment
  • Main surface 4 of the conversion element 1 is arranged. This means in particular that a rotation axis 5 of a cylindrical envelope 6, which are each assigned to one of the regions 2, 3, on a main surface 7 of the
  • Conversion element 1 is vertical.
  • a main surface 7 is provided as a radiation entrance surface, while the radiation entrance surface opposite the main side 8 is to serve as a radiation exit surface.
  • the first regions 2 and the second regions 3 in the present case penetrate the conversion element 1 from its first one
  • the second regions 3 are arranged in a plan view of the main surface 7 of the conversion element 1 in a hexagonal closest packing.
  • the hexagonal pattern is not continuously formed on the entire major surface 7 in the present embodiment.
  • the hexagonal dense sphere packages have no common axes of symmetry.
  • Areas 2 and the second areas 3 are the first
  • the conversion element 1 according to the exemplary embodiment of FIG. 3 has a multiplicity of first ceramic regions 2 which have no wavelength-converting properties. Particularly preferred are the ceramic first
  • Areas 2 hereby well transparent to visible light, in particular for the radiation of the first and the third wavelength range.
  • the second regions 3 of the conversion element 1 of Figure 3 are with wavelength-converting particles of a
  • the phosphor particles are suitable for electromagnetic radiation of the first
  • Wavelength range is different.
  • the conversion element 1 according to the embodiment of Figure 4A in contrast to the conversion element 1 according to the embodiment of Figure 1, a plurality of second regions 3, which are formed ceramic.
  • the second areas 3 are furthermore suitable
  • the first wavelength range preferably has blue light
  • the second wavelength range preferably yellow light
  • the third wavelength range preferably red light.
  • Embodiment of Figure 4B has a semiconductor body 9 with an active zone 10, which is adapted to the operation of electromagnetic radiation of a first Send wavelength range.
  • the active zone 10 preferably comprises a pn junction, a double heterostructure, a quantum well, or more preferably one
  • the semiconductor body 9 transmits electromagnetic radiation of the first wavelength range from it
  • Wavelength range has blue light or is formed of blue light.
  • a ceramic conversion element 1 is applied, as has already been described with reference to Figure 4A.
  • the ceramic conversion element 1 is suitable for transferring part of the blue radiation of the first wavelength range emitted by the semiconductor body 9 into radiation of a different second wavelength range from the first and a third different from the first and second
  • Conversion element 1 a part of the blue radiation of the semiconductor body 9 in yellow light, while the second regions 3 of the conversion element 1 convert a portion of the emitted from the semiconductor body 9 blue radiation into red light. Another part of the blue radiation of the semiconductor body 9 passes through the conversion element 1 unconverted. From the radiation exit surface 7 of the
  • Conversion element 1 is emitted mixed light, which is composed of blue unconverted radiation of the semiconductor body 9 and by the first regions 2 converted, yellow light and converted by the second regions 3, red light.
  • the mixed light which emits the optoelectronic component according to FIG. 4B preferably has one Color locus located in the warm white area of the CIE standard color chart.
  • the conversion element 1 is present by means of a
  • the joining layer 12 is formed of a silicone resin.
  • the side of the conversion element 1 is on the
  • a bonding pad 13 is applied, which is intended to the semiconductor body 9 to electrically
  • a ceramic conversion element 1, as has already been described, for example, with reference to FIGS. 1, 2, 3 and 4A, can be made, for example, with the one described below
  • Base material 15 is provided, wherein the base material 15 for producing one of the conversion elements 1 of Figures 1, 2 and 4A is suitable, a
  • the sol-gel solution 14 for example, crystallites of the later ceramic.
  • the crystallites and / or the sol-gel solution 14 furthermore has a dopant which is suitable for the
  • Wavelength conversion is responsible. This may be, for example, cerium as dopant.
  • Crystals of the base material 15 are particularly preferably formed from a YAG material.
  • the base material has no dopant.
  • the polymeric surfactants 16 may be, for example, a coblock polymer composed of at least two different molecules having different wetting properties in the sol-gel solution 14.
  • the sol-gel solution 14 is applied to a support 18 in a sol-gel layer 17 (FIG. 6).
  • a self-assembly of the polymeric surfactants 16 in the sol-gel solution 14 takes place, so that the polymeric surfactants form 16 ordered regions in the sol-gel layer 17.
  • the polymeric surfactants form 16 cylindrically-arranged micelles of one or more polymers.
  • the polymeric surfactants 16 can also form spherical micelles, which are preferably in a hexagonal close in the sol-gel layer 17
  • the support 18 is preferably designed to be electrically conductive in order to be able to serve as an electrode in an electrophoresis process in a subsequent step.
  • the support 18 is preferably designed to be electrically conductive in order to be able to serve as an electrode in an electrophoresis process in a subsequent step.
  • Carrier 18 either a metallic layer or is formed of a metal.
  • the sol-gel layer 17 is now aged, so that the
  • Base material 15 condenses around the structures of the self-assembled polymeric surfactants 16 (not shown) Subsequently, the sol-gel layer 17 is calcined and sintered, so that column-like, ceramic first regions 2 are formed from the sol-gel layer 17 and columnar air-filled second regions 3 are formed from the polymeric surfactants 16 (FIG. 7).
  • sol-gel layer 17 is now sintered and the carrier 18 detached (not shown), we obtain a
  • Phosphor particles 20 are suitable for radiation of the first wavelength range in radiation of the third
  • the carrier 18 serves as an electrode so that the phosphor particles 20 move due to surface charges to the carrier 18 and in the air-filled areas 3 when an electric field is applied (Figure 8).
  • the first regions 2 and the second regions 3 are now sintered, so that a ceramic conversion element 1 with a ceramic first
  • Carrier 18 forms ( Figure 9). Subsequently, the carrier 18 is removed again (FIG. 10). Alternatively, it is also possible that the first areas 2 before filling the second areas 3 with
  • Phosphor particles 20 are sintered and the Phosphor particles 20 remain unsintered in the second regions 3.
  • the polymeric surfactants 16 are arranged in a hexagonal closest packing within the sol-gel layer 17. After sintering the sol-gel layer 17 are formed
  • Conversion element 1 to achieve, in which the first regions 2 and the second regions 3 are perpendicular to the main surface 7, 8 of the conversion element 1 to manufacturing tolerances.
  • Such a conversion element 1 is shown in dashed lines in FIG.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Luminescent Compositions (AREA)

Abstract

L'invention concerne un élément de conversion en céramique (1) comprenant une pluralité de premières zones colonnaires (2) et une pluralité de deuxièmes zones colonnaires (3) différentes des premières zones (2). Les premières zones (2) sont réalisées en céramique, les deuxièmes zones (3) sont disposées selon un motif hexagonal, vu de dessus, sur une surface principale (7) de l'élément de conversion (1) ; et soit les premières zones (2) au moins sont adaptées pour convertir un rayonnement électromagnétique d'un premier domaine de longueur d'onde en un rayonnement électromagnétique d'un deuxième domaine de longueur d'onde différent du premier, soit les deuxièmes zones (3) au moins sont adaptées pour convertir un rayonnement électromagnétique d'un premier domaine de longueur d'onde en un rayonnement électromagnétique d'un troisième domaine de longueur d'onde différent du premier et du deuxième domaine de longueur d'onde. L'invention concerne en outre un composant optoélectronique doté d'un élément de conversion en céramique, ainsi qu'un procédé de fabrication d'un élément de conversion en céramique.
PCT/EP2012/068359 2011-09-21 2012-09-18 Élément de conversion en céramique, composant optoélectronique et procédé de fabrication d'un élément de conversion en céramique WO2013041525A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011113962.5A DE102011113962B4 (de) 2011-09-21 2011-09-21 Verfahren zur Herstellung eines keramischen Konversionselements
DE102011113962.5 2011-09-21

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DE102012109650A1 (de) 2012-10-10 2014-04-10 Osram Opto Semiconductors Gmbh Keramisches Konversionselement, optoelektronisches Halbleiterelement und Verfahren zur Herstellung eines keramischen Konversionselements
DE102012110668A1 (de) 2012-11-07 2014-05-08 Osram Opto Semiconductors Gmbh Konvertermaterial, Verfahren zur Herstellung eines Konvertermaterials und optoelektronisches Bauelement
DE102013103763A1 (de) * 2013-04-15 2014-10-16 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102013114466A1 (de) * 2013-12-19 2015-06-25 Osram Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
US11054112B2 (en) * 2017-12-22 2021-07-06 Lumileds Llc Ceramic phosphor with lateral light barriers
DE102018204163A1 (de) 2018-03-19 2019-09-19 Osram Opto Semiconductors Gmbh Konversionselement für LED-Anwendungen mit hoher Leistung und hoher Farbwiedergabe
DE102018108875A1 (de) * 2018-04-13 2019-10-17 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit Passivierungsschicht und Verfahren zur Herstellung des optoelektronischen Bauelements
DE102018128753A1 (de) 2018-11-15 2020-05-20 Osram Opto Semiconductors Gmbh Verfahren zur herstellung eines konversionselements, konversionselement und strahlungsemittierendes bauelement

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